TWI235401B - A method for making a field emission device - Google Patents

Abstract

The present invention relates to a method for making a field emission display device. The method includes the following steps: providing a work plate, depositing gate electrodes at relative areas on the work plate according to predetermined display pixels, forming an insulative film covering the gate electrodes and the work plate, depositing a layer of catalyst on the insulative film, forming barriers of insulative materials on the layer of catalyst according to the predetermined display pixels so that defining separated growing spaces, growing arrays of carbon nanotubes on the layer of catalyst within the growing spaces via CVD method, depositing cathode electrode on the arrays of carbon nanotubes, packaging a base plate with the cathode electrode and removing the work plate, etching the relative areas of the insulative film according to the arrays of carbon nanotubes, and packaging a phosphor having an anode cathode so that forming the field emission display device.

Description

V. Description of the Invention (1) [Technical Field to which Sheming belongs] The field emission display device in Nai, in particular, relates to a method for manufacturing a% emission display based on a species of human & [Preemptive technology] The second issue of 2: 199 ^ :: one is the first in the product of arc discharge. Published in the year of nanometers, four meters, Gengxi ^ Its good electrical conductivity, perfect lattice structure, Nano is present: Emission :: characteristics and has become a very promising field emission cathode material, the application field has a wide range of prospect. Dali Sheep Microwave is a postgraduate :::: gas deposition ... It is easy to deposit carbon nanotube arrays on the substrates of glass substrates such as glass and glass substrates. The point of the system, the second two = control of the catalyst film through the semiconductor lithography process to achieve the reported precision: This makes nano-carbon: = can be quickly applied. Dry π 隹 10 faces _ Unusable parts US Patent No. 6, 339, 281 discloses a method for preparing a box of a young prisoner to receive a carbon tube field emission display. The ancient soil type II; M ΠΛ. ^ ^ Yi 侑 Wan Fa. The method includes the following steps: f a substrate is formed into a cathode, and then an insulating sound is formed on the cathode. ⑺; a gate layer is formed on the insulating layer, and then formed on the gate layer ;, -micro (hole 3); The thumb pole layer is used as a mask to form (4) an overlying surname in the insulating layer to form a layer of catalyst on the substrate, and to grow a carbon nanotube array on the substrate. Emulsion phase deposition method 1235401 V. Description of the invention (2) However, the field emission nanometer carbon tube car pre-rolled phase deposition method is difficult to prepare: arrays have the following disadvantages and are in the field-it is difficult to overcome first. In order to achieve a uniform display of the distance between the carbon tube arrays, the size of the poles and the nanometers used for field emission are used to maintain the uniformity of the order of microns on the basis of chemical vapor deposition. The process is to achieve a large area of nanometer carbon tube height, for ίΐ line = 'necessary to reduce energy consumption' and ί ::; minimize as much as possible. Chemical vapour phase = 1 heterogeneous ulcer caused by nano carbon tube array of 1 industrial system. ^ ^ Pain ..., this is generally sufficient, it is difficult to predict the batch # 1 回 又 'renqi precision is not yet able to meet the difficult precise control The distance is in a desired range.疋 Avoid f: The surface of the nano-carbon tube array grown by the vapor deposition method cannot be = a small amount of the remaining catalyst particles are reacted or no longevity is generated: the field emission performance is unstable, uneven, and reduced to: To provide a grid and nano-carbon tube array; ::: System 2 for maintaining field-emission uniformity on the order of micrometers: [Content] The object of the present invention is to provide a grid and nano-carbon tube array Field emission display that maintains uniformity on the order of micrometers over a wide range '^ Page 7 1235401 V. Description of the invention (3) Method. Another object of the present invention is uniform, neatly arranged, and not ;: a method for manufacturing a field emission display of nanometer carbon tube scale at the emitting end, catalyst particles, and possibly qualitative carbon and other impurities. Another object of the present invention # # The pitch can be reduced as much as possible. For example, a method for grid and nano carbon tube array is provided. Manufacturing process of field emission display of micron order: The manufacturing method of the field emission display of the present invention mainly includes the following steps: providing a substrate; a dot matrix is formed on the substrate surface to form a gate electrode; 'the electrode surface and the substrate surface form a layer of insulating medium A catalyst layer is deposited on the surface of the insulating dielectric film; 2 An insulating layer is formed according to the predetermined display dot matrix described above, so that a predetermined space is left at the position of the insulating display dot matrix; a nano carbon tube array is formed in the predetermined space of the insulating layer A cathode electrode is deposited on the top of the nano carbon tube array; the bottom plate is packaged and the substrate is removed; the insulating dielectric film is removed to expose the nano carbon tube; the fluorescent screen is packaged to form a field emission display. Before the catalyst layer is deposited on the surface of the dielectric film, the silicon protective layer is deposited on the insulation layer, and the catalyst layer is deposited on the silicon (1) (2) (3) film; (4) (5) layer correspondingly In (6); (7) (8) (9) (10) the edge dielectric film

Page 8 1235401 V. Description of the invention (4) On the protective layer. Correspondingly, the step of depositing the cathode electrode after the silicon protective layer and the display dot matrix:,, and the plasma membrane step is further removed. In addition, the carbon nanotube array item. The material is a cathode electrode. The negative feedback layer of the resistor is made of metal. Shi Erba :: The preparation material can be glass, coated with an insulating layer of gold, or too much two-heart-based ceramics or clouds # 'Requires that it can withstand 700 . C 左 ίΠί 2 degrees. The thickness of the insulating dielectric film is 1 micrometer to 10 0: glass ^: 5: 0 micron and 200 micron. The material of the insulating layer can be strictly produced as: η edge layer of metal, silicon, silicon oxide, ceramic, or mica. Long = nanometer to nanometer. The thickness of the catalytic layer is 丨, nanometer, excellent =, the field emission display produced by the method of the present invention, wherein the insulating film can be used to control the distance between the grid and the carbon nanotube array, so that the distance can be as high as 2 Obtain a lower gate start voltage; made by nano-tube phase deposition method and used as the emission of electrons; 4 = one end of the catalyst is not used, so it cannot be used to emit electrons. Nature, and then can be real two = 衩 ductility. And the emission end face will not contain catalyst particles or amphoteric anti-4 miscellaneous shells, nor will it contain cluttered nano-carbon tubes. The protection: the performance is more stable and more uniform. &Amp; Extended field emission shows: [Embodiment]-Can be heartbroken. Please refer to the figure-the method of preparing the field emission display of the present invention.

Page 9 1235401 V. Description of the invention (5)-Process diagram 'which includes the following steps: When the substrate is two X-based :: the surface of the substrate is flat' and the substrate should be step 2 at a high temperature of V / and can be used repeatedly. Dry lattice 彳 # deposits the gate electrode. The gate electrode is formed from a predetermined display dot metal material. The film is made of :: 3 material on the thumb: a bean shape / a layer of insulating dielectric film. The insulating medium can be subjected to too much stress, the surface flatness is required to be less than 1 micron, and the high temperature during the growth of the carbon nanotubes is not exceeded. The material also deposits a catalyst layer on the insulating dielectric film. The catalyst layer is known as a transition element metal such as iron, cobalt, nickel, or an alloy thereof. Form an insulation layer with the gate electrical gate. The insulating layer is used to insulate between the cathode electrodes. The electrodes simultaneously form a plurality of voids to provide the growth space of the carbon nanotubes to form a carbon nanotube array. The CVD array is generated by chemical vapor deposition, and its height is about the same as that of the insulating layer. Step 2 was followed by depositing a cathode electrode on the carbon nanotube array. ^ Step 8. Package the substrate and remove the substrate. 'The portion corresponding to the display dot matrix of the insulating dielectric film is removed. Step 10: Package with fluorescent screen with anode electrode. The display shows the second to the fourteenth figures of the present invention. The emission display surface of the manufacturing field of the present invention can be equal to the second figure. First, a substrate 10 is provided. Detachment of finished product is easy. First, use stone feed 102 and other easy-to-remove substances to flatten it. The flatness requirements are as follows: ^ Yi Mizui Page 10 1235401 V. Description of the invention (6) The plate 1 〇 should be tolerable. Please refer to the third using electron beam evaporation ( (Not shown in the figure), or any metal, but it needs to be 'and its thermal expansion protective layer 1 2. For the insulation layer, please refer to the fourth 11. The deposition method can insulate the dielectric film 11 (Figure 10). The marginal dielectric film 11 has a thickness of 10 micrometers to 200 micrometers. The film 11 should be able to grow the temperature of the carbon tube. . When depositing, the first purpose is to protect the nano-carbon from being destroyed, because other materials ’require a dry-cut process to inject, and the thickness is in the range of 1 Onm to 1 mm. The temperature of the nano tube when the tube grows can be used repeatedly. As shown, a gate electrode 19 is deposited on the substrate 10. The deposition can be by thermal evaporation or sputtering, and the deposition can be performed by a hollow template using a photolithography process. The material of the gate 19 can be selected in principle and can withstand 700. The growth temperature coefficient of the carbon nanotubes around C can match the insulating dielectric films 11, 14, 14, and 18 that are formed later. As shown in the figure, an insulating dielectric film is deposited on the gate electrode 19 for coating, printing or directly using a ready-made sheet. This structure is used to control the cathode 17 and grid 19 (see the substrates for printing and growth in subsequent processes. The absolute range is 1 micron to 100 micron, preferably the thickness is about meters, and the flatness is required. Below 1 micron. This insulation is etched and can withstand nanometers of about 700 ° C. Its material can be selected from high temperature glass, gold or ceramic coated with insulation layer, mica, etc. Figure, in the dielectric film 1 A protective layer is etched to produce a display dot matrix. The purpose of this protective layer 1 2 is a wet etching step that may be used in subsequent processes. This is an optional structure. The protective layer 1 2 can be crushed or otherwise Resistance to wet etching, but can be removed without damaging the carbon nanotubes. The deposition method can be as thin as possible under the conditions of electron beam evaporation or magnetron sputtering.

Page 11 1235401 ----- V. Description of the invention (7) The agent diagram is shown on; the catalyst layer 13 is deposited on the layer 12. The catalyst layer 13 is deposited to a thickness of 4 to 7 Å metal or an alloy thereof. The catalysis is again iOnm, preferably 3 ~ 5nm. The deposition method is Baozi J Luofa: thermal evaporation or low emission method. π network = Λ see the seventh figure, an insulating layer 14 is formed on the catalyst layer 13. The purpose of the two * gs is to insulate the cathode electrode 17 and the gate electrode 19, and form a void 1 41 at the same time to provide Taiben r mountain from L ρ… ^ 1, a growth space for slaves. Production can be plated 1. Printed directly using ready-made sheets. The thickness of this insulating layer 14 is in the range of Um ~ 10m * m 'according to the growth length of the carbon nanotube array 15, and the thickness is preferably 10m ~ 500m. If ready-made sheets are used, the flatness of one side is required to be less than 1 micron (the side facing the catalyst). Do not display dot matrix when making. The material of this insulating layer 4 should be able to withstand 700. c The growth temperature of the right carbon nanotubes can be selected from high-temperature glass, metal coated with insulating layer, silicon, silicon oxide or ceramic, mica, etc. Please read the eighth figure. Nano carbon tube array 15 is grown in the gap i 4 1 of the insulating layer 丨 4. Its height is about the same as that of the insulating layer 丨 4. The unevenness in height will not affect the field emission display. effect. Referring to the ninth figure, a resistance negative feedback layer 16 may be optionally deposited according to the needs of the driving circuit. The material can be selected from silicon, alloy and other materials with suitable resistivity. The thickness is determined by the required resistance. The resistance is determined by the circuit design and the% gate voltage during use. between. The deposition can be performed by electron beam evaporation, thermal evaporation or sputtering. The shape of the deposition is the same as that of the cathode electrode, and a hollow-out template is required for the deposition.

Page 12 1235401 V. Description of the invention (8) Please refer to the tenth figure. The deposition method on the negative resistance feedback layer 6 is the same as that of the negative resistance feedback layer 6 and the phase ^ ° is also used. Shen board. The material of the cathode 17 is the same as that of the grid 19. Asked about the deposition mode · Please refer to the eleventh figure, the package substrate 18. The base plate 18 can be made of knee and cymbal materials. The production method can be printed and connected: see the twelfth figure, detach the substrate 10, and then use an appropriate process such as wet etching to remove the insulating dielectric film after turning over. Show & section (not labeled). Correspondence of U-array Please refer to the thirteenth figure, adopt appropriate process, such as the dry protective layer 12 in the corresponding part of the display pixel lattice (not labeled). If necessary, you can use laser bombardment to remove the remaining catalyst layer. 'Please ask 2 :: Four pictures, and finally package it with a fluorescent screen, which is not beneficial to the field, where the viewing screen includes an anode 20, glass substrate 21 and fluorescent ", 22. The field emission display formed includes: cathode 丨 7 The anode ^ • 1 The grid 19 between the cathode 17 and the anode 20 is used as a field emission unit for the meter 0 = the array 15 and the insulating layer 14 located between the grid 19 and the cathode 17. One end face is electrically connected to the cathode 17 through the negative resistance feedback layer 16 = the carbon nanotube array. The other end face and the insulation layer are close to the grid. The # face of 9 is basically on the same plane, and the insulation layer 14 Between the grid 19 and the grid 19-an insulating dielectric film 11 is included. The cathode 17 is packaged through the base plate 18. The carbon nanotube field emission display obtained by the method of the present invention controls the grid and the grid by the thickness of the dielectric film. The distance between the carbon nanotube arrays is low, so that the gate start voltage is lower; the nanometer used as the emitting end of the electrons Page 13 12401501 V. Description of the invention (9) High uniformity and uniformity in a wide range can be achieved, In addition, the uniformity of the emission effect of each pixel field can be achieved. It was clear that the requirements of the invention patent had been met, and a patent application was filed in accordance with the law. However, the above is only a preferred embodiment of the present invention and cannot be used to limit the scope of the patent application in this case. Those who are familiar with the skills of this case will rely on this The equivalent modifications or changes made by the spirit of the invention should be covered by the following patent applications.

Page 14 1235401 Brief description of the diagram The first diagram is a flowchart of a method for preparing a field emission display of the present invention. The second figure is a front view of a working plate having a plurality of grooves used in manufacturing the field emission display of the present invention. The third figure is a schematic diagram of depositing a gate electrode on the surface of a work plate. The fourth diagram is a schematic diagram of depositing an insulating dielectric film on the gate electrode shown in the third diagram. The fifth diagram is a schematic diagram of depositing a protective layer on the insulating dielectric film shown in the fourth diagram. The sixth diagram is a schematic view of forming a catalyst layer on the protective layer shown in the fifth diagram. The seventh diagram is a schematic diagram of forming an insulating layer with a gap on the catalyst layer shown in the sixth diagram. The eighth figure is a schematic view of growing a carbon nanotube array in the gap between the insulating layers shown in the seventh figure. The ninth figure is a schematic diagram of depositing a negative feedback layer on top of the nano carbon tube array shown in the eighth figure. The tenth figure is a schematic view of the cathode electrode deposited on the negative feedback layer shown in the ninth figure. • i The eleventh figure is a schematic diagram of the cathode electrode package bottom plate after the substrate in the tenth figure. The twelfth figure is a schematic view of etching the insulating dielectric film in the eleventh figure. The thirteenth figure is a schematic view of etching the protective layer of the carbon nanotube in the twelfth figure.

Page 151235401 Brief description of the diagram. The fourteenth diagram is the structure of a field emission display after the display screen is encapsulated. The main components are symbolized. Substrate 10 Insulating dielectric film 11 Protective layer 12 Catalyst layer 13 Insulating layer 14 Nano carbon tube array 15 Resistance Negative feedback layer 16 Cathode 17 Bottom plate 18 Peach pole 19 Anode 20 Glass substrate 21 Fluorescent layer 22 Groove 101 Stone block 102 Gap 141

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Claims (1)

1235401 / The method of applying the seeding device in the scope of Shenqing Patent, which includes the following steps: forming an electrode; a film; and depositing a electrode coat on the surface of the dielectric film forming a layer of insulating medium ^, 巴, 豪, and 介质 medium; *; according to the above reservation It displays the dot pattern. The marginal sound should have a predetermined space at the position where the dot matrix is displayed; "The marginal layer is in the predetermined space of the above-mentioned insulation layer, the mountain" is in the nano carbon campsite 丨 s mountain / Chengbu meter carbon tube array · package floor == deposited cathode electrode; plasma film to expose nano carbon tube; 2. as claimed in claim Γ into a field ten emission display method, where the field emission display in ^ is prepared with a square dielectric film: m plane: catalyst The silicon protective layer was previously deposited on the silicon protective layer. The catalytic tritium layer was deposited on the 3rd layer. · If you applied for the method of enveloping the right, the manufacturing method of the Douzhong ^ radio display. 4. If you applied for the right, the thickness of the film is 1 micron ~ _0 micron. The method of preparing the field emission display as described in item tH3 5. The thickness of the family of dielectrics for which the right is claimed is 10 μm to 200 μm. The method of preparing the field emission display as described in the item ^ Metal, made of glass, coated with insulating silicon, silicon oxide, ceramic or mica. Page 17 1235401