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TW200823953A - Surface-conduction electron emitter and electron source using the same - Google Patents

Surface-conduction electron emitter and electron source using the same Download PDF

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TW200823953A
TW200823953A TW95143847A TW95143847A TW200823953A TW 200823953 A TW200823953 A TW 200823953A TW 95143847 A TW95143847 A TW 95143847A TW 95143847 A TW95143847 A TW 95143847A TW 200823953 A TW200823953 A TW 200823953A
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electrode
conduction electron
carbon nanotube
surface conduction
substrate
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TW95143847A
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Chinese (zh)
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TWI322997B (en
Inventor
Peng Liu
Shou-Shan Fan
Liang Liu
Kai-Li Jiang
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Hon Hai Prec Ind Co Ltd
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Abstract

The present invention is related to a Surface-Conduction Electron Emitter (SCE). The SCE includes a substrate, two parallel electrodes and a number of Carbon Nanotubes (CNTs) disposed on the electrodes. The present invention is further related to an electron source. The electron source includes a substrate and a number of parallel SCEs disposed thereon. The SCE and electron source can be applied in a Surface-Conduction Electron Emitter Display (SED).

Description

200823953 九?發明說明: 【發明所屬之技術領域】 ‘ 本發明涉及一種電子發射元件,尤其涉及一種表面傳 - 導電子發射元件及應用該電子發射元件的電子源。 【先前技術】 平板顯示係顯示器行業的一大趨勢,目前主要的平板 顯示技術有液晶顯示(LCD)技術、等離子顯示(pdp)技 _ 術及場發射顯示(FED)技術等。其中,LCD技術係一種被 動發光型顯示技術,該顯示技術於光亮度及色彩保真方面 有疋的局限性。PDP技術係主動發光型顯示技術,該顯 示技術於色彩保真及能耗方向也有其局限性。目前較成熟 的FED技術為Spindt型,但由於其成本高、電子發射體的 堅固性及均勻性低,故,難於實現產業化。1996年,佳能 (Canon)推出了 一種新型的顯示技術,即,表面傳導電子 發射(Surface-Conduction Electron Emitter Display, • 簡稱SED)。 SED技術也係一種FED技術,但與傳統的FED技術不 同’ SED益件的電子發射沿著平行於基板的方向。一個SED 器件係由複數表面傳導電子發射元件 (Surface-Conduction Electron Emitter,簡稱 SCE)組 成的’SCE處於陰極表面,每一個SCE對應一個顯示單元。 明參閱圖1,傳統的SCE 10包括一陰極基板12,兩個電極 112、114,一導電薄膜ι16,及一位於導電薄膜窄縫處的 沈積層118。於沈積層118上有一奈米級的間隙12〇。當於 6 200823953 零極112、114施加一定電壓時,由於遂道作用,電子將從 電極112飛向電極114。一部分電子於飛躍過程中於陽極 14的作用下,被提取出來撞擊螢光屏16,從而發光。 SED技術與先前的陰極射線管顯示(CRT)技術的發光 原理相同,因而圖像具有同樣優秀的色彩效果。SED器件 由於藉由簡單的喷墨列印、啟動成形等簡單工藝製備,因 而生產成本大大降低。傳統40英寸的SED器件,光暗對比 度可達8600:1,厚度約為1〇丽,且功耗約為相同尺寸的 LCD器件的一半。 惟,於傳統SED器件的SCE中,製備用於發射電子的 間隙需要長時間大電流的燒斷成形過程,造成能源的浪 費。且,由於發射電子的間隙僅有幾個奈米的寬度,電子 於其中飛行時間很短,許多電子來不及被陽極電場提取出 來才里擊螢光屏,因而也會造成能源的浪費。然,如果把該 間隙增加,發射電子需要更高的發射電壓,將會超過先前 驅動電路所能提供的電壓範圍。故,需要研究能克服上述 缺點的新型電子發射元件。 奈米碳管(CNTs)係一種新型碳材料,其具有優異的導 電性能,且具有幾乎接近理論極限的長徑比,故,奈米碳 官係目前已知最好的電子發射材料之一,其具有極低場發 射電壓,從而可於較小的發射電壓及較大的發射距離下發 射電子,且發射電流穩定,因而非常適合用於電子發射元 件。 有鑒於此,提供一種採用奈米碳管,製備工藝簡單, 7 200823953 寻有較小能耗及較高電子發射效率的電子發射元件及電子 源實爲必要。 ^ 【發明内容】 ‘ 一種表面傳導電子發射元件,其包括一個基板及兩個 平行設置於基板表面的電極。該表面傳導電子發射元件進 一步包括複數線狀奈米碳管元件設置于上述平行電極之 間,該複數奈米碳管元件的一端固定於一電極,另一端向 另一電極延伸。 ® 所述複數奈米碳管元件彼此平行且平行於基板。 所述複數奈米碳管元件的一端分別固定於同一 電極’另一端與另一電極之間形成一間隙。 所述複數奈米碳管元件分別固定於不同電極,相 對的奈米碳管元件之間形成一間隙。 所述複數奈米碳管元件的一端固定於電極的表 面0 • 每個電極進一步包括沿與基板垂直方向堆疊設 置的/下電極及一上電極,該下電極與基板接觸。 所述複數奈米碳管元件一端固定於該上電極與 下電極之間。 所述表面傳導電子發射元件進一步包括一支撐 體設釁於電極之間的基板表面。 所述支撐體的厚度小於或等於下電極的厚度。 所述表面傳導電子發射元件進一步包括一固定 層設Ϊ於電極表面及奈米碳管元件表面。 8 200823953 、所述兩個電極之間的基板上設置有一凹槽。 所述複數奈米碳管元件形成複數連 結構。 、的鋸齒狀 所述奈米碳管元件為奈米碳管線或奈 所述基板材料為石英、玻璃、陶究、塑腰 有氧化物絕緣層的導體。 > 表面 所述電極材料為鈦、鈾、金、免或鶴。200823953 Nine? [Technical Field] The present invention relates to an electron-emitting element, and more particularly to a surface conduction electron-emitting element and an electron source to which the electron-emitting element is applied. [Prior Art] Flat panel display is a major trend in the display industry. Currently, the main flat panel display technologies include liquid crystal display (LCD) technology, plasma display (pdp) technology, and field emission display (FED) technology. Among them, LCD technology is a passive illumination type display technology, which has limitations in terms of brightness and color fidelity. The PDP technology is an active light-emitting display technology that has its limitations in terms of color fidelity and energy consumption. At present, the more mature FED technology is Spindt type, but due to its high cost and low robustness and uniformity of electron emitters, it is difficult to achieve industrialization. In 1996, Canon introduced a new display technology called Surface-Conduction Electron Emitter Display (SED). SED technology is also a FED technology, but unlike conventional FED technology, the electron emission of the SED benefit piece is along a direction parallel to the substrate. An SED device consists of a surface-conducting Electron Emitter (SCE) on the cathode surface, and each SCE corresponds to a display unit. Referring to Figure 1, a conventional SCE 10 includes a cathode substrate 12, two electrodes 112, 114, a conductive film ι16, and a deposition layer 118 at the slit of the conductive film. There is a nanoscale gap 12 于 on the deposited layer 118. When a certain voltage is applied to the zero poles 112, 114 at 6 200823953, electrons will fly from the electrode 112 to the electrode 114 due to the ramp. A part of the electrons are extracted by the anode 14 under the action of the anode 14 to strike the fluorescent screen 16 to emit light. The SED technique has the same principle as the previous cathode ray tube display (CRT) technique, so the image has the same excellent color effect. The SED device is produced by a simple process such as simple ink jet printing, start-up molding, and the like, so that the production cost is greatly reduced. Traditional 40-inch SED devices have a light-dark contrast ratio of 8600:1, a thickness of about 1 sen, and consume about half the power of LCD devices of the same size. However, in the SCE of a conventional SED device, preparing a gap for emitting electrons requires a long-time high-current blow molding process, resulting in waste of energy. Moreover, since the electron-emitting gap is only a few nanometers wide, the electrons have a short flight time, and many electrons are not enough to be extracted by the anode electric field to hit the fluorescent screen, thereby causing waste of energy. However, if this gap is increased, the emission electrons require a higher emission voltage, which will exceed the voltage range that the previous driver circuit can provide. Therefore, it is necessary to study a novel electron-emitting element that can overcome the above disadvantages. Nanocarbon tubes (CNTs) are a new type of carbon material with excellent electrical conductivity and an aspect ratio almost close to the theoretical limit. Therefore, the nanocarbon official system is currently known as one of the best electron-emitting materials. It has a very low field emission voltage, so that electrons can be emitted at a small emission voltage and a large emission distance, and the emission current is stable, and thus is very suitable for use in an electron-emitting element. In view of this, a nano carbon tube is provided, and the preparation process is simple. 7 200823953 It is necessary to find an electron-emitting element and an electron source with low energy consumption and high electron emission efficiency. ^ [Summary of the Invention] A surface conduction electron-emitting element comprising a substrate and two electrodes disposed in parallel on the surface of the substrate. The surface conduction electron-emitting element further includes a plurality of linear carbon nanotube members disposed between the parallel electrodes, one end of the plurality of carbon nanotube members being fixed to one electrode and the other end extending toward the other electrode. ® The plurality of carbon nanotube elements are parallel to each other and parallel to the substrate. One end of the plurality of carbon nanotube members is respectively fixed to the same electrode, and the other end forms a gap with the other electrode. The plurality of carbon nanotube elements are respectively fixed to different electrodes, and a gap is formed between the opposite carbon nanotube elements. One end of the plurality of carbon nanotube members is fixed to the surface of the electrode 0. Each of the electrodes further includes a /lower electrode and an upper electrode which are stacked in a direction perpendicular to the substrate, and the lower electrode is in contact with the substrate. The plurality of carbon nanotube members are fixed at one end between the upper electrode and the lower electrode. The surface conduction electron-emitting element further includes a substrate surface on which the support is disposed between the electrodes. The thickness of the support is less than or equal to the thickness of the lower electrode. The surface conduction electron-emitting element further includes a fixed layer disposed on the surface of the electrode and the surface of the carbon nanotube component. 8 200823953, a groove is arranged on the substrate between the two electrodes. The plurality of carbon nanotube elements form a plurality of connected structures. The zigzag-shaped carbon nanotube component is a nanocarbon pipeline or a substrate. The substrate material is a conductor of quartz, glass, ceramics, and a plastic waist with an oxide insulating layer. > Surface The electrode material is titanium, uranium, gold, exempt or crane.

所述間隙的寬度為1微米至1〇微米。 所述下電極包括一層金屬或多層金屬。 所述支撐體材料為氧切、氮切 或陶瓷。 屬氧化物 所述蚊層材料為光刻膠、氧切 屬氧化物或陶瓷。 石夕、金The gap has a width of from 1 micron to 1 micron. The lower electrode includes a layer of metal or a plurality of layers of metal. The support material is oxygen cut, nitrogen cut or ceramic. The oxide material is a photoresist, an oxygen oxide or a ceramic. Shi Xi, Jin

十一種電子源,其包括複數表面電子發射元件 述複數表面傳導電子發射元件係如-個基板,:所 電極平行設置於該基板表面,複數線狀奈米^ =置于上述平行電極之間,該複數奈米 :件 端固定於一電極,另一端向另一電極延伸。的一 與先前技術相比,該表面傳導電子發射元件及電 :精由光刻、沈魏膜等先_簡單的工藝製備。發射電 2間隙可達幾個微米’電子於此_飛行有 f取出來撞擊電子,從㈣加電子率。由= 米碳管優㈣電子魏,降低了電子㈣電壓,^ 降低了能耗。 而 9 200823953 J[實施方式】 下面將結合附圖對本發明實施例作進一步的詳細說 明。 本發明第一實施例提供一種表面傳導電子發射元件2〇 (Surface-Conduction Electron Emitter,SCE)。請參閱 圖2 ’該SCE 20包括一基板22,平行設置於基板22表面 的第一電極24及第二電極24’ ,及兩個線狀奈米碳管元 件26。第一電極24及第二電極24,分別包括沿垂直於基Eleven electron sources comprising a plurality of surface electron-emitting elements, the plurality of surface-conduction electron-emitting elements, such as a substrate, wherein the electrodes are disposed in parallel on the surface of the substrate, and the plurality of linear nanometers are placed between the parallel electrodes The plurality of nanometers: the end of the member is fixed to one electrode, and the other end is extended to the other electrode. The surface conduction electron-emitting element and the electric device are prepared by a first-simple process such as photolithography, immersion film, or the like. The transmission power 2 gap can reach several micrometers 'electron here _ flight has f taken out to hit the electron, from (four) plus electron rate. By = m carbon tube excellent (four) electronic Wei, reducing the electron (four) voltage, ^ reduced energy consumption. 9 200823953 J [Embodiment] Hereinafter, embodiments of the present invention will be further described in detail with reference to the accompanying drawings. A first embodiment of the present invention provides a Surface-Conduction Electron Emitter (SCE). Referring to FIG. 2, the SCE 20 includes a substrate 22, a first electrode 24 and a second electrode 24' disposed in parallel on the surface of the substrate 22, and two linear carbon nanotube elements 26. The first electrode 24 and the second electrode 24 are respectively included along the vertical

板22方向堆疊設置於基板22表面的下電極242、242,及 上電極244、244’ 。兩個奈米碳管元件26分別夾於下電 極242與上電極244之間及下電極242,與上電極244,之 間下電極242及242與基板22表面接觸,上電極244、 244’分別位於下電極242、242,及奈米碳管元件郜上。 兩個奈米碳管元件26的相對的電子發射端262之間形成一 間隙28。 一基板22可為石英、玻璃、陶瓷、塑膠等絕緣材料,或, 該基板22還可為表面覆有氧化物絕緣層的導體。基板22 =厚度可根據預定需求設置,當基板22絲面覆有氧化物 巴緣層,體8^,為了保證充分地絕緣,氧化物絕緣層應 ,有-定厚度。本實施例的基板22優選絲面形成有一二 氧化:層^片,二氧财層的厚度為G·5至1微米。 :米Μ το件26可為奈#碳管或奈轉管線等,該奈 為树數奈米碳管首尾相連形成的束狀結構。 電極24及第二電極24,的材料可為鈦、翻、金、 200823953 轉或鈀等金屬,厚度為20至150奈米,寬度可分別為幾十 微米至幾百微米,長度可根據需要選擇,第一電極24及第 一電極24的間隙28為幾微米至幾十微米。優選地,本 貝轭例中的第一電極24及第二電極24,的寬度為9〇微米 至190微米,長度為7厘米,間距為微米。 朴進一步地,為增強下電極242、242,與基板22的附 著力,下電極242、242,可選用鈦、鎢等附著力強的金屬。 同時,為增強上電極244、244,與奈米碳管元件26的電 接觸,從而減小上電極244、244,與奈米碳管元件26的 接觸電阻,上電極244、244,可選用金、鉑、鈀等導電性 好的金屬。進一步地,為增強下電極242、242,與基板22 的附著力及其與奈米碳管元件26的電接觸,下電極242、 242’可進一步包括多層金屬。下電極242、242,的最下 層金屬直接絲板22相接觸,其材料可為鈦、鎢等附著力 強的金屬下電極242、242最上層金屬直接與奈米碳管 元件26相接觸’其材料可為金、鉑、鈀等導電性好的金屬。 $本技術領域的技術人員應明白,本發明第一實施表面 2導電=發射元件20可進一步包括複數奈米碳管元件邡 —一;第電極24與第一電極24,之間,該複數奈米碳 2元件26彼此相互平行且平行於基板22設置。進一步地, 明參^圖3,該複數奈米碳管元件26可僅固定於第一電極 =一母個奈米碳管元件26可包括至少一電子發射端咖向 f二電極24’延伸,並分別與第二電極24,形成間隙28。 請參閱圖4,該複數奈米碳管元件26也可分_定於第— 11 200823953 f極24及第二電極24’,該複數奈米碳管元件26分別包 括至少一電子發射端262彼此相對,形成間隙28。 本技術倾的技術人貞胸白,本發明第—實施例表 面傳導電子發射元件2G中的第—電極24及第二電極% 也可採用-體結構,奈米碳管元件26亦可藉由導電膠钻覆 等=式f辦第1極24及第二電極%表面,或者直 接肷入第一電極24及第二電極24,的材料中。The lower electrodes 242, 242 and the upper electrodes 244, 244' are stacked on the surface of the substrate 22 in the direction of the board 22. The two carbon nanotube elements 26 are respectively sandwiched between the lower electrode 242 and the upper electrode 244 and the lower electrode 242, and the upper electrode 244, the lower electrodes 242 and 242 are in surface contact with the substrate 22, and the upper electrodes 244 and 244' are respectively Located on the lower electrodes 242, 242, and the carbon nanotube component. A gap 28 is formed between the opposing electron emitting ends 262 of the two carbon nanotube elements 26. A substrate 22 may be an insulating material such as quartz, glass, ceramic, plastic, or the like, or the substrate 22 may be a conductor whose surface is covered with an oxide insulating layer. Substrate 22 = thickness can be set according to predetermined requirements. When the surface of the substrate 22 is covered with an oxide layer, the body 8 is formed. In order to ensure sufficient insulation, the oxide insulating layer should have a certain thickness. The substrate 22 of the present embodiment is preferably formed with a oxidized layer of a wire surface having a thickness of G·5 to 1 μm. : 米Μ το件26 can be a Nai carbon tube or a nai transfer line, etc., which is a bundle structure formed by the end of the tree carbon nanotubes. The electrode 24 and the second electrode 24 may be made of titanium, turn, gold, 200823953 or palladium, and have a thickness of 20 to 150 nm, and the width may be several tens of micrometers to several hundreds of micrometers, respectively. The length may be selected according to requirements. The gap 28 between the first electrode 24 and the first electrode 24 is several micrometers to several tens of micrometers. Preferably, the first electrode 24 and the second electrode 24 in the present embodiment have a width of 9 Å to 190 μm, a length of 7 cm, and a pitch of micrometers. Further, in order to enhance the adhesion of the lower electrodes 242 and 242 to the substrate 22, the lower electrodes 242 and 242 may be made of a metal having strong adhesion such as titanium or tungsten. At the same time, in order to enhance the electrical contact between the upper electrodes 244, 244 and the carbon nanotube element 26, thereby reducing the contact resistance of the upper electrodes 244, 244 with the carbon nanotube component 26, the upper electrodes 244, 244, optionally gold A metal with good conductivity such as platinum or palladium. Further, to enhance the adhesion of the lower electrodes 242, 242 to the substrate 22 and its electrical contact with the carbon nanotube elements 26, the lower electrodes 242, 242' may further comprise a plurality of layers of metal. The lowermost metal direct wires 22 of the lower electrodes 242, 242 are in contact with each other, and the material thereof may be a metal lower electrode 242, 242 with strong adhesion such as titanium or tungsten. The uppermost metal directly contacts the carbon nanotube element 26. The material may be a metal having good conductivity such as gold, platinum or palladium. It will be understood by those skilled in the art that the first embodiment of the present invention 2 conductive=emitter element 20 may further comprise a plurality of carbon nanotube elements ;-one; between the first electrode 24 and the first electrode 24, the complex number The carbon carbon 2 elements 26 are arranged parallel to each other and parallel to the substrate 22. Further, in FIG. 3, the plurality of carbon nanotube elements 26 may be fixed only to the first electrode = a mother carbon nanotube element 26 may include at least one electron emitting end extending toward the f-electrode 24'. And forming a gap 28 with the second electrode 24, respectively. Referring to FIG. 4, the plurality of carbon nanotube elements 26 can also be divided into the eleventh and the second electrodes 24'. The plurality of carbon nanotube elements 26 respectively include at least one electron emitting end 262. In contrast, a gap 28 is formed. The technique of the present technology is sturdy, and the first electrode 24 and the second electrode % of the surface conduction electron-emitting device 2G of the first embodiment of the present invention may also adopt a body structure, and the carbon nanotube component 26 may also be The conductive adhesive tape or the like = the surface of the first pole 24 and the second electrode %, or directly into the material of the first electrode 24 and the second electrode 24.

、、言月參關5,本發明第—實施例進—步提供—種應用 上述表面傳導電子發射元件20的電子源30。該電子源% 包括複數上述表面料電子發射元件2(),該複數表面傳導 ^發射元件2G共用—個基板22,複數對第—電極%及 弟-電極24,平行設置於該基板22表面,複數線狀夺米 碳管元件D湘定於上述第—電極24及第二電極 24,該複數奈米碳管元件26分別包括至少—電子發射端 262彼此相對,相對的電子發射端脱之間形成間隙㈣。 本發明電子源30可進-步應用於SED,該咖包括一電子 源30 ’ -設置於電子源3〇上方的一個陽極%,及一個設 置於It極32上並與其配合的螢光屏%的。娜工作時, 於電子源3G的第-電極24及第二電極%,施加訊號電 麼。由於奈米碳管元件26本身具有極佳的場發射性能,於 電場作訂,電子麵定於第二電極24、奈米碳管元件 26射入間隙28,並飛向相鄰的第一電極24。於陽極電極 32的正向偏愿作用下’電子被拉向陽極電極,益撞擊螢 光屏34從而發光。於本實施例中,當陽極%的場強與第 12 200823953 -Λ 了電極24和第二電極24,咖場強之比為6:1時,陽極 32的電流與第-電極24和第二電極24, _電流大致相 * 同’說明電子源30具有較高的電子發射效率及電子利用 率。 請參閲圖6,本發明第二實施例提供—種表面傳導電 子發射元件40,該表面傳導電子發射元件4〇包括一個基 板42,平行設置於基板42表面的第一電極44及第二電極 44’,及兩個奈米碳管元件46。第-電極44及第二電極 44’分聰括沿垂直基板42方向堆疊設置於基板42表面 的下電極442、442’及上電極物、鲍,。兩個奈米碳管 兀件46分別夾於下電極442與上電極撕及下電極梢, 與上電極444,之間。該表面傳導電子發射元件4〇的結構 與第-實施例表面傳導電子發射元件2〇結構基本相同,其 Ϊ別在於:該表面傳導電子發射元件40於第-電極44及 f掩電極44之間的基板42表面設置有一支撺體48,該 • 支撐體48的厚度小於或等於下電極442、442,的厚度。 $體48根據基板42材料,可選用氧化發、氧化銘、金 物、陶^等材料。支禮體48可避免奈米碳管元件 ^旦^極44的部分於重力作用下易彎變形甚至斷裂, ==表面傳導電子發射元件4〇電 至70杏米。體為一二乳化矽介質層,其厚度為4〇奈米 ^閱圖7 ’本發明第三實施例提供一種表面傳導電 又、70件50。該表面傳導電子發射元件5〇包括一個基 13 200823953 取52,平行設置於基板&表面的第一電極%及第二電極 54 ’及兩個線狀奈米碳管元件56。兩個奈米碳管元件56In the first embodiment of the present invention, the electron source 30 of the surface conduction electron-emitting element 20 is applied. The electron source % includes a plurality of the surface material electron-emitting elements 2 (), the plurality of surface conduction-emitting elements 2G share a substrate 22, and a plurality of pairs of the first electrode and the second electrode 24 are disposed in parallel on the surface of the substrate 22, The plurality of linear carbon nanotube elements D are disposed on the first electrode 24 and the second electrode 24, and the plurality of carbon nanotube elements 26 respectively include at least - the electron emitting ends 262 are opposed to each other, and the opposite electron emitting ends are separated Form a gap (4). The electron source 30 of the present invention can be further applied to the SED, the coffee comprising an electron source 30' - an anode % disposed above the electron source 3, and a phosphor screen disposed on the It pole 32 and cooperating therewith of. When working, the signal is applied to the first electrode 24 and the second electrode % of the electron source 3G. Since the carbon nanotube element 26 itself has excellent field emission performance, the electric field is set, and the electronic surface is fixed to the second electrode 24, the carbon nanotube element 26 is injected into the gap 28, and flies to the adjacent first electrode. twenty four. Under the positive bias of the anode electrode 32, electrons are pulled toward the anode electrode, and the phosphor screen 34 is attracted to emit light. In the present embodiment, when the field strength of the anode % is the same as that of the 12th 200823953 - the electrode 24 and the second electrode 24, the ratio of the field strength is 6:1, the current of the anode 32 and the first electrode 24 and the second The electrode 24, _current is substantially the same as the 'description', the electron source 30 has a high electron emission efficiency and electron utilization rate. Referring to FIG. 6, a second embodiment of the present invention provides a surface conduction electron-emitting element 40, which includes a substrate 42 and a first electrode 44 and a second electrode disposed in parallel on the surface of the substrate 42. 44', and two carbon nanotube elements 46. The first electrode 44 and the second electrode 44' are divided into lower electrodes 442, 442' and upper electrode materials and abalones which are stacked on the surface of the substrate 42 in the direction of the vertical substrate 42. Two carbon nanotube members 46 are sandwiched between the lower electrode 442 and the upper and lower electrode tips, and the upper electrode 444, respectively. The structure of the surface conduction electron-emitting element 4 is substantially the same as that of the surface conduction electron-emitting element of the first embodiment, which is distinguished by the fact that the surface conduction electron-emitting element 40 is between the first electrode 44 and the f-mask electrode 44. The surface of the substrate 42 is provided with a body 48 having a thickness less than or equal to the thickness of the lower electrodes 442, 442. $ Body 48 According to the material of the substrate 42, a material such as oxidized hair, oxidized metal, gold, ceramics or the like can be selected. The support body 48 can prevent the carbon nanotube component from being deformed or even broken under the action of gravity, and the surface conduction electron-emitting element is electrically connected to 70 square meters. The body is a two-layer emulsified enamel dielectric layer having a thickness of 4 Å. [Fig. 7] A third embodiment of the present invention provides a surface conduction electric power of 70 pieces. The surface conduction electron-emitting element 5 includes a substrate 13 200823953 taken at 52, and the first electrode % and the second electrode 54 ' and the two linear carbon nanotube elements 56 are disposed in parallel on the substrate & Two carbon nanotube elements 56

分別固定於第-電極54及第二電極54,。絲面傳導電 子發射το件50的結構與第—實施纖面傳導電子發射元 件20的結構基本相同’其區別在於:該表面傳導電子發射 元件50於兩電極54之間的基板52 |面形成一凹槽58。 由於基板52為絕緣材料或其表面覆有—氧化物的絕緣 層,該基板52會對奈米碳管元件56的發射電子有一定的 遮罩作用。目此,基板52表娜成—凹槽58,可增加夺 米碳管元件56錄板52的轉,從叫低基板52的遮罩 作用。 明參閱圖8’本發明第四實施例提供一種表面傳導電 子發射元件6G。該表面傳導電子發射元件6()包括一個基 板62 ’平行設置於基板62表面的第一電極64及第二電極 64 ’及兩個線狀奈米碳管元件66。兩個奈米碳管元件阳 分別固定於第-電極64及第二電極64,。絲面傳導電 子發射元件60的結構解—#施絲面傳導電子發射元 件20結構基本相同,其區別在於:該表面傳導電子發射元 件60進-步包括-固定層68。該固定層68覆蓋於電極 64、64的表面及奈米碳管元件⑼的部分表面。該固定層 68可增強奈米碳管元件66的穩固性,防止其於電場作; 下被拉出。該固定| 68可採用氧化石夕、氮化石夕、金屬氧化 物、陶瓷及光刻膠等絕緣材料。 另,本技術領域技術人員應明白,本發明第一實施例 200823953 ㈣_等計發射元件如,為降低同-電極24或24, 内的相鄰奈米碳管元件邡間的遮罩作用,增強夺乎 件26的發射電子能力,奈讀管元件2二=;: 可形成連續的鑛齒狀等結構,詳如圖9所示。…^ 1併參關1G至圖14,本發明第―實施例表面傳 V電子發射元件1G的製備方法包括以下步驟:They are respectively fixed to the first electrode 54 and the second electrode 54. The structure of the surface conduction electron-emitting electron-emitting element 50 is substantially the same as that of the first-stage fiber-conducting electron-emitting element 20, which is different in that the surface conduction electron-emitting element 50 forms a surface of the substrate 52 between the two electrodes 54. Groove 58. Since the substrate 52 is an insulating material or an insulating layer whose surface is covered with an oxide, the substrate 52 has a certain masking effect on the electron emission of the carbon nanotube element 56. For this reason, the substrate 52 is formed into a groove 58 which can increase the rotation of the recording tube 52 of the carbon nanotube element 56 from the mask of the lower substrate 52. Referring to Figure 8', a fourth embodiment of the present invention provides a surface conduction electron-emitting element 6G. The surface conduction electron-emitting element 6 () includes a first electrode 64 and a second electrode 64' which are disposed in parallel with the substrate 62' on the surface of the substrate 62, and two linear carbon nanotube members 66. The two carbon nanotube elements are fixed to the first electrode 64 and the second electrode 64, respectively. The structure of the wire-conducting electron-emitting element 60 is substantially the same in structure as that of the surface-conducting electron-emitting element 20, except that the surface-conducting electron-emitting element 60 further includes a fixing layer 68. The pinned layer 68 covers the surfaces of the electrodes 64, 64 and a portion of the surface of the carbon nanotube component (9). The pinned layer 68 enhances the stability of the carbon nanotube component 66 from being exposed to an electric field; The fixing|68 can be made of an insulating material such as oxidized stone, nitrided stone, metal oxide, ceramic, or photoresist. In addition, those skilled in the art should understand that the first embodiment of the present invention 200823953 (four) _ is an emissive element, for example, to reduce the masking effect between the adjacent carbon nanotube elements in the same electrode 24 or 24, The electron-emitting capability of the occupant 26 is enhanced, and the tube element 2==: can form a continuous ore-like structure, as shown in FIG. The method for preparing the surface-transmission V-electron emitting element 1G of the first embodiment of the present invention comprises the following steps:

步驟2,請參閱圖11 ’於基板22上製備兩個相互平行 ^下電極242。其具體步驟包括:先於基板22塗覆光刻膠, 藉由光刻方法於光娜層形成_平行的條帶狀區域,於 該區域露出基板22。紐,藉由餘驗、磁㈣射或電 子束蒸發等方法於基板22上沈積—層或者多層金 屬。最後,以丙酮等有機溶劑除去光刻膠及其上的金屬層, 步驟卜提供-基板22。該基板22可為石英、玻璃、 陶曼、塑膠等絕緣材料,或表面覆有氧化物絕緣層的導體。 練22的厚度可根翻定需求設置,#基板22為表 有氧化物絕緣層的導體時,為了保證充分地絕緣,氧化物 絕緣層應具有-定厚度。本實施_基板22為表面有一二 氧化石夕層的石夕片,二氧化抑的厚度為^幻微米。 即得到下電極242、242’。或者,先於整個基板22上沈積 一層或者多層金屬,於該金屬層表面塗覆一層光刻膠,藉 由光刻方法於光刻膠層形成圖形以保護所需要電極,而^ 採用濕法刻蝕、離子束反應刻蝕等方法去除多餘區域的金 屬層,最後以丙酮等有機溶劑去除光刻膠層,即得到下電 極 242 、 242,。 15 200823953 •下電極242、242’的材料可為鈦、鈾、金、鶴或把等 金屬’厚度為40奈米至70奈米’長度及寬度為幾十微米 至幾百微米,間距為米至幾十微米。為增強下電極 242 242與基板22的附著力,下電極242、242,優選 鈦、鎢等附著力強的金屬。 。下電極242、242可包括多層金屬。下電極242、242, 的,下層金屬直接與基板22相接觸,其材料優選欽 、鎢等Step 2, referring to FIG. 11 ', two mutually parallel ^ lower electrodes 242 are prepared on the substrate 22. The specific steps include: coating a photoresist before the substrate 22, and forming a parallel strip-shaped region in the photonic layer by photolithography, and exposing the substrate 22 in the region. The layer is deposited on the substrate 22 by a method of restoring, magnetic (tetra) or electron beam evaporation. Finally, the photoresist and the metal layer thereon are removed by an organic solvent such as acetone, and the substrate 22 is provided. The substrate 22 may be an insulating material such as quartz, glass, terracotta, plastic, or the like, or a conductor coated with an oxide insulating layer. The thickness of the tempering 22 can be set to a desired setting. When the substrate 22 is a conductor having an oxide insulating layer, the oxide insulating layer should have a constant thickness in order to ensure sufficient insulation. In the present embodiment, the substrate 22 is a Shi Xi tablet having a layer of a SiO2 layer on the surface, and the thickness of the oxidized layer is ^1 micrometer. That is, the lower electrodes 242, 242' are obtained. Alternatively, one or more layers of metal are deposited on the entire substrate 22, and a photoresist is coated on the surface of the metal layer to form a pattern on the photoresist layer by photolithography to protect the desired electrode, and the wet etching is performed. The metal layer in the excess region is removed by etching, ion beam reaction etching, etc., and finally the photoresist layer is removed by an organic solvent such as acetone to obtain lower electrodes 242 and 242. 15 200823953 • The material of the lower electrodes 242, 242' may be titanium, uranium, gold, crane or metal such as 'thickness from 40 nm to 70 nm' and length and width from tens of microns to several hundred microns, spacing is meter Up to tens of microns. In order to enhance the adhesion of the lower electrode 242 242 to the substrate 22, the lower electrodes 242 and 242 are preferably metals having strong adhesion such as titanium or tungsten. . The lower electrodes 242, 242 may comprise multiple layers of metal. The lower electrodes 242, 242, the lower metal directly contacts the substrate 22, and the material thereof is preferably chin, tungsten, etc.

附著力強的金屬,以增強下電極242、242,與基板22的 附著力。下電極242、242,秘上層金屬直接與於後續步 驟放置的奈米碳管元件26 _,其材料優選為金鈾 、鈀等 ¥電性好的金屬’以增強下電極242、242,與奈米破管元 件26的電接觸,從而減小接觸電阻。 步驟3,請參閱圖12,於平行的下電極242、242,上 放置複數奈米碳管元件26。複數奈米碳管元件26相互平 行且平行於基板22。奈米雜元件26可為奈米碳管、夺 米礙管線等。於下電極242、242,上放置奈米碳管元㈣ 可採用鋪設、喷灑、沈積等方法。 鋪設方法的具體步驟如下:提供一個奈米碳管膜;將 奈米碳管膜平行於基板22且沿垂直於下電極⑽、242, 的方向鋪放於下電極242、242,表面上,並滴少許酒精于 奈米碳管膜上使魏職即_奈米碳管線。該方法中製 備奈米碳管膜的方法包括以下步^提供—奈米礙管陣 列,用-鑷子夾住或用膠帶餘—束奈米碳管y施^力 抽拉。由於范德華力的作用,奈米碳管束•首尾連接於 16 200823953 •起,沿抽拉方向形成一奈米碳管膜。奈米碳管膜及奈米 碳管線的具體製備方法參見論文:Xia〇b〇 zhang et al., ‘ Advanced Materials, 2006, 18, 1505-1510 。 . 本技術領域技術人員應明白,該鋪設方法也可將步驟 2中已獲得的形成有下電極242、242,的基板22邊緣粘上 膠,並靠近並接觸奈米碳管陣列,沿垂直於下電極242、 242’的方向移動基板22拉出一個奈米碳管膜,滴少許酒 精于奈米碳管膜上,使其收縮後即得到奈米碳管線。 _ 倾方法的具體步驟如下:將複數奈米碳管分散於溶 劑中,該溶劑可為乙醇、丙酮、異丙醇、〗,2—二氯乙烷等 有機溶劑,或者係摻入表面活性劑的溶液,如添加十二烷 基苯磺酸鈉的水溶液。然後將含奈米碳管的溶液喷灑於下 電極242、242’上,待溶劑揮發後,奈米碳管即置於下電 極242、242上。優選地,可先將下電極242、242,加熱 至咼於溶劑沸點的溫度,而後將含奈米碳管的溶液喷灑於 φ 下電極242、242’ 。由於溶劑於高溫下迅速揮發,可防止 奈米碳管於下電極242、242,表面上再次團聚。 沈積方法的具體步驟如下:將奈米碳管分散於溶劑 中,該溶劑可為乙醇、丙酮、異丙醇、i,2—二氣乙烷等有 機溶劑,或者係摻入表面活性劑的溶液,如添加十二烷基 笨磺酸鈉的水溶液。然後將帶有下電極242、242,的基板 22放置於含有奈米碳管的溶液或懸濁液中,靜置一段時 間。奈米碳管由於自身重力作用沈積於下電極242、242, 表面,待溶劑完全揮發後,奈米碳管即置於下電極242、 17 200823953 242’表面。 另,上述二種放置奈米碳管的方法中,噴灑和沈積放 ‘ 置奈米碳管的方法,可進—步包括將奈米碳管26取向的過 . 程。取向方法包括以氣流吹使奈米碳管26垂直於下電極 242、242’的氣流法,以外加電場使奈米碳管26垂直於下 電極242、242’的電泳法等。 步驟4,請參閱圖13,於奈米碳管元件26表面上製備 與下電極242、242相同形狀的上電極244、244,。上電 _ 極244、244的製備方法與步驟2中製備下電極242、242, 的方法相同。上電極244、244’的結構與下電極242、242, 相同,上電極244'244,的材料可為鈦、翻、金、嫣或把 等金屬,優選的材料為鉑、金或鈀等導電性好的金屬。 步驟5,請參閱圖14,形成奈米碳管元件邡間的間隙 28。先於奈米碳管元件26與上電極244、244,表面整體 塗覆-層光刻膠,藉由細方法露出奈米碳管元件26的一 • 部分,然後,藉由等離子刻蝕等方法去除奈米碳管元件26 的露出的部分,從而形成間隙28。發射電子間隙的寬度 w微米至陳米。等離子職可用氫氣、魏及!^ 硫等氣體。本實施例係採用氧氣等離子二 斯卡,功率為100瓦特,反應時間約為2分鐘,即可完全 去除奈米破管元件26的露出部分。本技術領域人員應明 白,步驟5中間隙28還可藉由掩模等方法製備。 步驟5可進-步包括去除多餘奈米石炭管的步驟。因步 驟3中,除了放置於下電極242、242,的奈米礙管外,基 18 200823953 =等有4餘:米•該多餘的奈米碳管可藉由 法實施例的表面傳導電子元件40的製備方 ί與上衫—實施例製備方法的步縣本相同。兩者區別 形成下電極442後,進—步藉_真空 及磁控騎等方法,于平行於下電極祕 ^的基板42上形成支撐體48。該支撐體 =二據,同’可選用氧化…陶; 中,支^8 、於或等於下電極442的高度。本實施例 70奈米 二氧化石夕介質層,其厚度為40奈米至 、絲第ί實施例的表面傳導電子元件50的製備方 / 實施㈣備方法的步縣本_。兩者區別 在於,於步驟5形成間隙之後,於 时 52表面上藉由科恥❹ ^ 電極54間的基板 的不㈣ 槽58,根據基板犯材料 有-編t用不㈣職劑。基板52為絕緣材料或表面覆 絕緣層,對奈米碳管元件56的電子發射有一定 ==;因此’凹槽58的形成,可增加奈米碳管元件 實^Φ 離,從而降低基板52的遮罩作用。於本 實把例中,基板52為覆蓋有二氧切層 、本 『為贼左右的氫氧化鉀溶液,反應時間約= 鐘,所得到的凹槽58的深度約為1〇微米至2〇微米。刀 ,發明第四實施例的表面傳導電子元件6〇的事備方 〜、衫-實施法的步縣本袖。兩者區別 19 200823953 而沾本於1驟5中’將覆蓋於奈米碳管66及上電極644表 太乎石保留’形成―岐層68。該肢層68可增強 j石厌=的穩固性,防止奈麵管66於電場作用下被 於步驟4巾,進—步包括-沈積方法形成固 -二"驟’該固定層68可為氧化矽、氮化矽、金屬 乳化物、陶瓷等絕緣材料。A highly adherent metal enhances the adhesion of the lower electrodes 242, 242 to the substrate 22. The lower electrodes 242, 242, the upper layer metal directly and the carbon nanotube element 26_ placed in the subsequent step, the material of which is preferably a metal such as gold uranium, palladium or the like, to enhance the lower electrodes 242, 242, and The meter breaks the electrical contact of the component 26, thereby reducing the contact resistance. Step 3. Referring to Figure 12, a plurality of carbon nanotube elements 26 are placed on the parallel lower electrodes 242, 242. The plurality of carbon nanotube elements 26 are parallel to each other and parallel to the substrate 22. The nano-components 26 can be carbon nanotubes, nanotubes, and the like. The carbon nanotubes (4) placed on the lower electrodes 242 and 242 may be laid, sprayed, deposited, or the like. The specific steps of the laying method are as follows: providing a carbon nanotube film; placing the carbon nanotube film parallel to the substrate 22 and laying on the surface of the lower electrodes 242, 242 in a direction perpendicular to the lower electrodes (10), 242, and Drop a little alcohol on the carbon nanotube film to make Wei job _ nano carbon pipeline. The method for preparing a carbon nanotube film in the method comprises the following steps: providing a nano-barrier array, sandwiching with a tweezers or using a tape-to-nano carbon nanotube y to force pull. Due to the role of van der Waals force, the carbon nanotube bundles are connected end to end at 16 200823953 to form a carbon nanotube film along the drawing direction. For specific preparation methods of carbon nanotube membranes and nano carbon pipelines, see the paper: Xia〇b〇 zhang et al., ‘Advanced Materials, 2006, 18, 1505-1510. It will be understood by those skilled in the art that the laying method can also glue the edge of the substrate 22 formed with the lower electrodes 242, 242 obtained in the step 2, and close to and contact the array of carbon nanotubes, perpendicular to The direction of the lower electrodes 242, 242' moves the substrate 22 to pull out a carbon nanotube film, and drops a little alcohol on the carbon nanotube film to shrink it to obtain a nanocarbon line. The specific steps of the tilting method are as follows: the plurality of carbon nanotubes are dispersed in a solvent, and the solvent may be an organic solvent such as ethanol, acetone, isopropanol, or 2-dichloroethane, or a surfactant is incorporated. A solution such as an aqueous solution of sodium dodecylbenzenesulfonate. The solution containing the carbon nanotubes is then sprayed onto the lower electrodes 242, 242', and after the solvent is volatilized, the carbon nanotubes are placed on the lower electrodes 242, 242. Preferably, the lower electrodes 242, 242 may be first heated to a temperature at the boiling point of the solvent, and then the solution containing the carbon nanotubes is sprayed onto the φ lower electrodes 242, 242'. Since the solvent is rapidly volatilized at a high temperature, the carbon nanotubes can be prevented from agglomerating again on the surfaces of the lower electrodes 242, 242. The specific steps of the deposition method are as follows: the carbon nanotubes are dispersed in a solvent, which may be an organic solvent such as ethanol, acetone, isopropanol, i,2-dioxaethane, or a solution doped with a surfactant. For example, an aqueous solution of sodium dodecyl sulfonate is added. The substrate 22 with the lower electrodes 242, 242 is then placed in a solution or suspension containing carbon nanotubes and allowed to stand for a period of time. The carbon nanotubes are deposited on the surface of the lower electrodes 242, 242 due to their own gravity. After the solvent is completely volatilized, the carbon nanotubes are placed on the surface of the lower electrodes 242, 17 200823953 242'. In addition, in the above two methods of placing carbon nanotubes, the method of spraying and depositing the carbon nanotubes may further include the process of orienting the carbon nanotubes 26. The orientation method includes an air flow method in which the carbon nanotubes 26 are perpendicular to the lower electrodes 242, 242' by a gas flow, an electrophoresis method in which an electric field is applied to make the carbon nanotubes 26 perpendicular to the lower electrodes 242, 242', and the like. In step 4, referring to Fig. 13, upper electrodes 244, 244 having the same shape as the lower electrodes 242, 242 are prepared on the surface of the carbon nanotube member 26. The method of preparing the power-up electrodes 244, 244 is the same as the method of preparing the lower electrodes 242, 242 in step 2. The structure of the upper electrodes 244, 244' is the same as that of the lower electrodes 242, 242. The material of the upper electrode 244'244 may be titanium, flip, gold, tantalum or the like. The preferred material is conductive such as platinum, gold or palladium. Good metal. Step 5, referring to Figure 14, forms a gap 28 between the turns of the carbon nanotube elements. Prior to the surface of the carbon nanotube element 26 and the upper electrodes 244, 244, a layer of photoresist is integrally coated, and a part of the carbon nanotube component 26 is exposed by a fine method, and then, by plasma etching or the like. The exposed portion of the carbon nanotube element 26 is removed to form a gap 28. The width of the emission electron gap is from w microns to Chen meters. Plasma duty available hydrogen, Wei and! ^ Gas such as sulfur. In this embodiment, oxygen plasma is used, the power is 100 watts, and the reaction time is about 2 minutes, so that the exposed portion of the nanotube breaking member 26 can be completely removed. It will be apparent to those skilled in the art that the gap 28 in step 5 can also be prepared by a mask or the like. Step 5 may further include the step of removing excess carboniferous tubes. Because in step 3, in addition to the nanotubes placed on the lower electrodes 242, 242, the base 18 200823953 = equal to 4: m • the excess carbon nanotubes can be surface-conducting electronic components by the method embodiment The preparation of 40 is the same as that of the upper shirt-the preparation method of the embodiment. The difference between the two forms the lower electrode 442, and the support 48 is formed on the substrate 42 parallel to the lower electrode by a method such as vacuum and magnetron riding. The support body is the same as the lower electrode 442. In the present embodiment, a 70 nm dioxide dioxide dielectric layer having a thickness of 40 nm to the surface of the surface conduction electronic component 50 of the embodiment of the present invention is implemented. The difference between the two is that after the gap is formed in step 5, the non-fourth groove 58 of the substrate between the electrodes 54 is on the surface of the surface 52, and the material is used according to the substrate. The substrate 52 is an insulating material or a surface-insulating insulating layer, and has a certain electron emission to the carbon nanotube element 56. Therefore, the formation of the groove 58 increases the separation of the carbon nanotube component, thereby lowering the substrate 52. The role of the mask. In the present embodiment, the substrate 52 is covered with a dioxygen layer, the potassium hydroxide solution is about thief, and the reaction time is about = clock. The depth of the groove 58 obtained is about 1 〇 micrometer to 2 〇. Micron. Knife, the surface conduction electronic component 6 of the fourth embodiment is invented. The difference between the two 19 200823953 and the dip in the first step 5 'will cover the carbon nanotubes 66 and the upper electrode 644 table too stone retention 'formation 岐 layer 68. The limb layer 68 can enhance the stability of the j-soil, prevent the surface tube 66 from being subjected to the electric field by the step 4, and the step-by-step method includes forming a solid-two " Insulating materials such as yttria, tantalum nitride, metal emulsions, and ceramics.

#另也步驟5中可藉由採用鑛齒狀的光刻方法,使奈米 米碳#形成連續的蘇蠢狀結構,製備出 石㈣9所示° _齒狀的間隙可降低奈米 魏奈米碳管_料侧,從而增強奈米碳 :其他开^電子能力。奈米碳管元件的複數奈米碳管還 電子源30的製備方法與表轉導電子發射元件2〇的 衣備方法她,趙備方法紐步驟包括:提供-基板22 ; :該ίίΓ上製備複數相互平行的下電極;於下電極上放 置複數奈米碳管元件26 ’複數奈米碳管元件相互平行且平 仃於基板,垂纽下電極;於奈米碳管元件26上製備與下 ^極同开/狀的上電極’上電極與下電極共同構成電極 ’ ’形成奈米碳管元件26間的間隙28。 與先前技術相比較’本發明實施例的表面傳導電子發 射疋件及電子源’如簡單的域L藝就可製備f 從而可簡化製備工藝。另,由於發射電子的間隙可達幾個 微米電子於此間隙飛行有足夠的時間被陽極電 來撞擊榮光屏,從㈣加電子率。另,由於奈米碳t 20 200823953 ,良的電子發射特性,降低了電子發射電壓,從而降低了 此耗□此’本發明實施例的表面傳導電子發射元件及電 子源,=簡化SED的製備工藝、提高的發光效率及降 低S E D能耗方神有著廣闊的應用前景 胃綜上所述,本發明確已符合發明專利之要件,遂依法 提出專利申4。惟,以上所述者僅為本發明之較佳實施例, 自不此以此限制本案之中請專利範圍。舉凡熟悉本案技藝 =人士援依本發a狀精神所作之等效修飾或變化,皆應涵 盍於以下申睛專利範圍内。 【圖式簡單說明】 圖1係先前技術中表面傳導電子發射元件的側視 圖 β 、圖2係本發明第一實施例表面傳導電子發射元件的剖 視示意圖。 圖3與圖4係本發明第一實施例表面傳導電子發射元 件的俯視示意圖。 圖5係應用本發明第一實施例表面傳導電子發射元件 的電子源及應用該電子源的SED的側視示意圖。 圖6係本發明第二實施例表面傳導電子發射元件的剖 視示意圖。 圖7係本發明第三實施例表面傳導電子發射元件 視示意圖。 ^ 圖8係本發明第四實施例表面傳導電子發射元件的剖 視示意圖。 21 200823953 視示=係本發明第_實施例表面傳導電子發射元件的俯 ^ θ其巾奈米碳管轉形成連續的_狀結構。 的崎法 HU王圚Μ係圖10的具體步驟示意圖。 【主要元件符號說明】 表面傳導電子發射元件 w、20、40、50、60 電子源 30 基板 12、22、42、52、62 電極 112、114、24、24,、 54、54’、64、64, 陽極 14、32 上電極 244、244’ 、444、4 下電極 242、242’ 442、442 奈米碳管 26、46、56、66 電子發射端 262 間隙 28、120 螢光屏 16、34 支撐體 48 凹槽 58 固定層 68 導電薄膜 116 沈積層 118 22#Alternatively, in step 5, by using a tooth-like lithography method, the nanometer carbon# can form a continuous su-like structure, and the stone (4) 9 can be prepared to form a _ tooth-like gap to reduce the nano-Weini. The carbon tube _ material side, thereby enhancing the nano carbon: other open electrical capabilities. The carbon nanotube component of the plurality of carbon nanotubes is also prepared by the method of preparing the electron source 30 and the surface-conducting electron-emitting component 2, and the method of preparing the substrate is: providing - substrate 22; a plurality of parallel lower electrodes; a plurality of carbon nanotube elements 26 are placed on the lower electrode. The plurality of carbon nanotube elements are parallel to each other and are flat on the substrate, and the lower electrode is placed on the lower carbon nanotube element 26 The upper electrode and the lower electrode together form an electrode '' forming a gap 28 between the carbon nanotube elements 26. Compared with the prior art, the surface conduction electron-emitting element and the electron source of the embodiment of the present invention can be prepared as a simple domain L to simplify the preparation process. In addition, since the electron-emitting gap can reach several micrometers of electrons flying in this gap, there is enough time for the anode to strike the glory screen, and the electron rate is increased from (4). In addition, due to the good electron emission characteristics of the nanocarbon t 20 200823953, the electron emission voltage is lowered, thereby reducing the consumption of the surface conduction electron-emitting element and the electron source of the embodiment of the invention, and the preparation process of the simplified SED The improved luminous efficiency and the reduction of SED energy consumption have broad application prospects. In summary, the present invention has indeed met the requirements of the invention patent, and patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and the scope of the patent application in this case is not limited thereby. Anyone who is familiar with the skill of this case = the equivalent modification or change made by the person in accordance with the spirit of this issue shall be within the scope of the following patents. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side view of a surface conduction electron-emitting element of the prior art, and Fig. 2 is a schematic cross-sectional view showing a surface conduction electron-emitting element of a first embodiment of the present invention. 3 and 4 are schematic plan views showing a surface conduction electron-emitting element of a first embodiment of the present invention. Fig. 5 is a side elevational view showing an electron source to which the surface conduction electron-emitting element of the first embodiment of the present invention is applied and an SED to which the electron source is applied. Figure 6 is a schematic cross-sectional view showing a surface conduction electron-emitting device of a second embodiment of the present invention. Figure 7 is a schematic view showing a surface conduction electron-emitting device of a third embodiment of the present invention. Figure 8 is a schematic cross-sectional view showing a surface conduction electron-emitting device of a fourth embodiment of the present invention. 21 200823953 OBJECT = The pitch of the surface conduction electron-emitting element of the first embodiment of the present invention is rotated to form a continuous _-like structure. The method of the specific steps of Figure 10 is the method of the King of the King. [Description of main component symbols] Surface conduction electron-emitting elements w, 20, 40, 50, 60 electron source 30 substrates 12, 22, 42, 52, 62 electrodes 112, 114, 24, 24, 54, 54, 54', 64, 64, anode 14, 32 upper electrode 244, 244', 444, 4 lower electrode 242, 242' 442, 442 carbon nanotubes 26, 46, 56, 66 electron emission end 262 gap 28, 120 fluorescent screen 16, 34 Support 48 groove 58 fixed layer 68 conductive film 116 deposited layer 118 22

Claims (1)

200823953 十:申請專利範圍 1. 一種表面傳導電子發射元件,其包括一個基板及 . 兩個平行設置於基板表面的電極,其改良在於,所 述表面傳導電子發射元件進一步包括複數線狀奈 米碳管元件設置于上述平行電極之間,該複數奈米 碳管元件的一端固定於一電極,另一端向另一電極 延伸。 2. 如申請專利範圍第1項所述的表面傳導電子發射 • 元件,其中,所述複數奈米碳管元件彼此平行且平 行於基板。 3. 如申請專利範圍第1項所述的表面傳導電子發射 元件,其中,所述複數奈米碳管元件的一端分別固 定於同一電極,另一端與另一電極之間形成一間 隙。 4. 如申請專利範圍第1項所述的表面傳導電子發射 _ 元件,其中,所述複數奈米碳管元件分別固定於不 同電極,相對的奈米碳管元件之間形成一間隙。 5. 如申請專利範圍第1項所述的表面傳導電子發射 元件,其中,所述複數奈米碳管元件的一端固定於 電極的表面。 6. 如申請專利範圍第1項所述的表面傳導電子發射 元件,其中,每個電極進一步包括沿與基板垂直方 向堆疊設置的一下電極及一上電極,該下電極與基 板接觸。 23 200823953 7. 如申請專利範圍第6項所述的表面傳導電子發射 元件,其中,所述複數奈米碳管元件一端固定於該 ^ 上電極與下電極之間。 8. 如申請專利範圍第1項所述的表面傳導電子發射 元件,其中,所述表面傳導電子發射元件進一步包 括一支撐體設置於兩個電極之間的基板表面。 9. 如申請專利範圍第8項所述的表面傳導電子發射 元件,其中,所述支撐體的厚度小於或等於下電極 • 的厚度。 10. 如申請專利範圍第1項所述的表面傳導電子發射 元件,其中,表面傳導電子發射元件進一步包括一 固定層設置於電極表面及奈米碳管元件表面。 11. 如申請專利範圍第1項所述的表面傳導電子發射 元件,其中,所述兩個電極之間的基板上設置有一 凹槽。 _ 12.如申請專利範圍第1項所述的表面傳導電子發射 響 元件,其中,所述複數奈米碳管元件形成複數連續 的鑛齒狀結構。 13. 如申請專利範圍第1項至第12項中任一項所述的 表面傳導電子發射元件,其中,所述奈米碳管元件 為奈米碳管線或奈米碳管。 14. 如申請專利範圍第1項所述的表面傳導電子發射 元件,其中,所述基板材料為石英、玻璃、陶莞、 塑膠、表面有氧化物絕緣層的導體。 24 200823953 1.5.如申請專利範圍第1項所述的表面傳導電子發射 元件’其中’所述電極材料為欽、舶、金、把或鶴。 β 16.如申請專利範圍第3項或第4項所述的表面傳導 電子發射元件,其中,所述間隙的寬度為1微米至 10微米。 17. 如申請專利範圍第6項所述的表面傳導電子發射 元件,其中,所述下電極包括一層金屬或多層金屬。 18. 如申請專利範圍第8項所述的表面傳導電子發射 _ 元件,其中,所述支撐體材料為氧化矽、氮化矽、 金屬氧化物或陶瓷。 19. 如申請專利範圍第10項所述的表面傳導電子發 射元件,其中,所述固定層材料為光刻膠、氧化矽、 氮化石夕、金屬氧化物或陶究。 20. —種電子源,其包括複數表面電子發射元件,其 改良在於,所述複數表面傳導電子發射元件係共用 0 —個基板,複數電極平行設置於該基板表面,複數 線狀奈米碳管元件設置于上述平行電極之間,所述 複數奈米碳管元件的一端固定於一電極’另一端向 另一電極延伸。 21. —種電子源,其包括複數表面電子發射元件,其 改良在於,所述複數表面傳導電子發射元件係共用 一個基板,複數對電極設置於該基板表面,複數線 狀奈米碳管元件設置于上述平行電極之間,所述複 數奈米碳管元件的一端固定於一電極,另一端向另 25 200823953 一電極延伸200823953 10: Patent application scope 1. A surface conduction electron-emitting element comprising a substrate and two electrodes disposed in parallel on a surface of the substrate, wherein the surface conduction electron-emitting element further comprises a plurality of linear nanocarbons The tube element is disposed between the parallel electrodes, and one end of the plurality of carbon nanotube elements is fixed to one electrode and the other end extends to the other electrode. 2. The surface conduction electron emission device of claim 1, wherein the plurality of carbon nanotube elements are parallel to each other and parallel to the substrate. 3. The surface conduction electron-emitting device according to claim 1, wherein one end of the plurality of carbon nanotube members is fixed to the same electrode, and the other end forms a gap with the other electrode. 4. The surface conduction electron-emitting device according to claim 1, wherein the plurality of carbon nanotube members are respectively fixed to different electrodes, and a gap is formed between the opposite carbon nanotube members. 5. The surface conduction electron-emitting device according to claim 1, wherein one end of the plurality of carbon nanotube members is fixed to a surface of the electrode. 6. The surface conduction electron-emitting device of claim 1, wherein each of the electrodes further comprises a lower electrode and an upper electrode stacked in a direction perpendicular to the substrate, the lower electrode being in contact with the substrate. The surface conduction electron-emitting element according to claim 6, wherein one end of the plurality of carbon nanotube elements is fixed between the upper electrode and the lower electrode. 8. The surface conduction electron-emitting device of claim 1, wherein the surface conduction electron-emitting device further comprises a support disposed on a surface of the substrate between the two electrodes. 9. The surface conduction electron-emitting device according to claim 8, wherein the thickness of the support is less than or equal to the thickness of the lower electrode. 10. The surface conduction electron-emitting device according to claim 1, wherein the surface conduction electron-emitting device further comprises a fixing layer disposed on the surface of the electrode and the surface of the carbon nanotube member. 11. The surface conduction electron-emitting device according to claim 1, wherein a groove is provided on the substrate between the two electrodes. The surface conduction electron emission element of claim 1, wherein the plurality of carbon nanotube elements form a plurality of continuous orthodontic structures. The surface conduction electron-emitting element according to any one of claims 1 to 12, wherein the carbon nanotube element is a carbon nanotube or a carbon nanotube. 14. The surface conduction electron-emitting device according to claim 1, wherein the substrate material is quartz, glass, ceramic, plastic, or a conductor having an oxide insulating layer on the surface. The surface conduction electron-emitting element of the invention of claim 1 wherein the electrode material is a chin, a ship, a gold, a crane or a crane. The surface conduction electron-emitting element according to claim 3, wherein the gap has a width of from 1 μm to 10 μm. 17. The surface conduction electron-emitting device of claim 6, wherein the lower electrode comprises a layer of metal or a plurality of layers of metal. 18. The surface conduction electron-emitting device according to claim 8, wherein the support material is ruthenium oxide, tantalum nitride, metal oxide or ceramic. 19. The surface conduction electron-emitting element according to claim 10, wherein the fixing layer material is a photoresist, cerium oxide, cerium nitride, metal oxide or ceramic. 20. An electron source comprising a plurality of surface electron-emitting elements, wherein the plurality of surface conduction electron-emitting elements share 0-substrate, the plurality of electrodes are disposed in parallel on the surface of the substrate, and the plurality of linear carbon nanotubes The element is disposed between the parallel electrodes, and one end of the plurality of carbon nanotube elements is fixed to one electrode and the other end extends to the other electrode. 21. An electron source comprising a plurality of surface electron-emitting elements, wherein the plurality of surface conduction electron-emitting elements share a substrate, a plurality of counter electrodes are disposed on a surface of the substrate, and a plurality of linear carbon nanotube elements are disposed Between the parallel electrodes, one end of the plurality of carbon nanotube elements is fixed to one electrode, and the other end is extended to another electrode of 200823953
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397701B (en) * 2009-04-17 2013-06-01 Hon Hai Prec Ind Co Ltd Device and method for detecting electromagnetic wave
TWI620223B (en) * 2013-09-16 2018-04-01 克萊譚克公司 Electron emitter device with integrated multi-pole electrode structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397701B (en) * 2009-04-17 2013-06-01 Hon Hai Prec Ind Co Ltd Device and method for detecting electromagnetic wave
TWI620223B (en) * 2013-09-16 2018-04-01 克萊譚克公司 Electron emitter device with integrated multi-pole electrode structure

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