TWI291763B - Gray tone mask and method for manufacturing the same - Google Patents
Gray tone mask and method for manufacturing the same Download PDFInfo
- Publication number
- TWI291763B TWI291763B TW094123355A TW94123355A TWI291763B TW I291763 B TWI291763 B TW I291763B TW 094123355 A TW094123355 A TW 094123355A TW 94123355 A TW94123355 A TW 94123355A TW I291763 B TWI291763 B TW I291763B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- pattern
- film
- semi
- transmissive
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000010408 film Substances 0.000 claims description 294
- 239000000758 substrate Substances 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 5
- 230000008439 repair process Effects 0.000 claims description 4
- 241000282320 Panthera leo Species 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 11
- 238000009826 distribution Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 33
- 239000013589 supplement Substances 0.000 description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 238000004380 ashing Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002609 anti-worm Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
- G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004205309A JP2006030320A (ja) | 2004-07-12 | 2004-07-12 | グレートーンマスク及びグレートーンマスクの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200608581A TW200608581A (en) | 2006-03-01 |
| TWI291763B true TWI291763B (en) | 2007-12-21 |
Family
ID=35896789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094123355A TWI291763B (en) | 2004-07-12 | 2005-07-11 | Gray tone mask and method for manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2006030320A (ja) |
| KR (1) | KR100663115B1 (ja) |
| CN (1) | CN100432809C (ja) |
| TW (1) | TWI291763B (ja) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4968709B2 (ja) * | 2006-03-17 | 2012-07-04 | Ｈｏｙａ株式会社 | グレートーンマスクの製造方法 |
| JP4816197B2 (ja) * | 2006-03-30 | 2011-11-16 | 大日本印刷株式会社 | 階調マスクおよびその製造方法 |
| JP4934237B2 (ja) * | 2007-09-29 | 2012-05-16 | Ｈｏｙａ株式会社 | グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法 |
| JP5089362B2 (ja) * | 2007-12-13 | 2012-12-05 | 信越化学工業株式会社 | フォトマスクおよび露光方法 |
| WO2009130746A1 (ja) * | 2008-04-22 | 2009-10-29 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法 |
| JP5182029B2 (ja) * | 2008-11-18 | 2013-04-10 | 大日本印刷株式会社 | 階調マスク |
| JP2011210889A (ja) * | 2010-03-29 | 2011-10-20 | Hoya Corp | レジスト塗布方法およびレジスト塗布装置、並びに該レジスト塗布方法を用いたフォトマスクブランクおよびフォトマスクの製造方法 |
| JP5635577B2 (ja) * | 2012-09-26 | 2014-12-03 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
| TWI682190B (zh) * | 2014-03-19 | 2020-01-11 | 日商豪雅冠得光電股份有限公司 | 光學元件 |
| JP2015212720A (ja) * | 2014-05-01 | 2015-11-26 | Hoya株式会社 | 多階調フォトマスクの製造方法、多階調フォトマスク及び表示装置の製造方法 |
| CN104122700A (zh) * | 2014-05-29 | 2014-10-29 | 京东方科技集团股份有限公司 | 一种3d显示用基板及其制作方法、掩模板 |
| JP2016224289A (ja) * | 2015-06-01 | 2016-12-28 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及び表示装置の製造方法 |
| JP6726553B2 (ja) * | 2015-09-26 | 2020-07-22 | Hoya株式会社 | フォトマスクの製造方法、及び表示装置の製造方法 |
| JP6573591B2 (ja) * | 2016-09-13 | 2019-09-11 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3429125B2 (ja) * | 1995-12-21 | 2003-07-22 | 沖電気工業株式会社 | 位相シフトマスク及びそのマスクを用いたレジストパターンの形成方法 |
| JPH11289010A (ja) * | 1998-04-01 | 1999-10-19 | Sony Corp | 多層配線の形成方法 |
| JP2002131885A (ja) * | 2000-10-23 | 2002-05-09 | Hoya Corp | グレートーンマスクの描画方法、及びグレートーンマスクの製造方法 |
| JP2002189281A (ja) * | 2000-12-19 | 2002-07-05 | Hoya Corp | グレートーンマスク及びその製造方法 |
| JP4410951B2 (ja) | 2001-02-27 | 2010-02-10 | Ｎｅｃ液晶テクノロジー株式会社 | パターン形成方法および液晶表示装置の製造方法 |
| KR100464204B1 (ko) * | 2001-06-08 | 2005-01-03 | 엘지.필립스 엘시디 주식회사 | 그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 |
| CN1218171C (zh) * | 2001-08-20 | 2005-09-07 | Hoya株式会社 | 灰调掩模的缺陷检查方法及缺陷检查装置 |
| JP2006030319A (ja) | 2004-07-12 | 2006-02-02 | Hoya Corp | グレートーンマスク及びグレートーンマスクの製造方法 |
-
2004
- 2004-07-12 JP JP2004205309A patent/JP2006030320A/ja active Pending
-
2005
- 2005-07-08 KR KR1020050061760A patent/KR100663115B1/ko not_active Expired - Fee Related
- 2005-07-11 TW TW094123355A patent/TWI291763B/zh not_active IP Right Cessation
- 2005-07-12 CN CNB2005100840715A patent/CN100432809C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW200608581A (en) | 2006-03-01 |
| CN100432809C (zh) | 2008-11-12 |
| CN1721960A (zh) | 2006-01-18 |
| KR20060049995A (ko) | 2006-05-19 |
| KR100663115B1 (ko) | 2007-01-02 |
| JP2006030320A (ja) | 2006-02-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |