TWI287521B - A ship propeller made of a shock-absorbing and strength-reinforced nano-plastics material - Google Patents
A ship propeller made of a shock-absorbing and strength-reinforced nano-plastics material Download PDFInfo
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1287521 使用奈米粉體之新用途的基礎上。 材料大小縮小至奈米尺 案發明人認為,奈米體—旦:才f面原子的面積比率甚高。本 關係,會出現缺少共價電面;:生JJff因曝露於外界 此時亟需向外界捕捉雷 面殘鍵,而處於極不安定狀態, 還原力,所以以下稱夺乎夺面、p=態奈米體具有極強烈的化學 球,因受曰照而使。環顧人類居住的地 相摩擦生電結果,水靜彳;、^^上升過程中,水汽與空氣 米表面自由基具有極強U力電3!3面大氣帶負電。由於奈 周遭帶負電的大氣奪取電3成,就立即向其 實奈米表::ίί:的奈米體即可證 料具結晶結構,則奈米處縛狀態。設若材 最高能位0稍高的能隙⑶中,如第!^戶;^。a就在比價帶⑵ ,,體+的表面吸著電子可視同N型半導體 體),但兩者有著明顯的區別,其一是争 兩 n型半導體不帶電,其次是奈纽著負電= 半導體的電子(施體)卻存在於獅内部。 Ϊ於第材^表中面i易從外界吸收能量並提升其能位。例 著電子的rt 所獲得能量大於(糾)時,表面吸 ^電子的此位就進入傳導帶(1);如第二圖表示,表 可脫離奈料才料表面成為游離狀 ί畚^成為表面自由基,然後表面自由基又向其周遭物 ϊϊίΐ子並?放能ί。根據本案發明人研究顯示,奈米表面吸 耆電子有下列多種方式吸收能並發生能位變化: (1) 光子撞擊引起導電或游離作用; (2) 低頻光反射及高頻光透射作用; (3) 粒子撞擊引起導電或游離作用; 1287521 (4) 吸收電磁波生熱作用; (5) 傳導熱和幅射熱引起導電或游離作用; (6) 電場牽引起導電或游離作用; (7) 吸收震波(超音速壓力波)引起導電或游離作用; (8) 吸收稀釋波(超音速拉力波)引起導電或游離作用; (9) 受劇變磁場感應引起導電或游離作用; (10) 受互為垂直的靜態電場和磁場之感應引起導電增強作用; (11) 吸收彈性波(音波和超音波)引起導電或游離作用;,1287521 Based on the new use of nano-powder. The material size is reduced to the nanometer scale. The inventor believes that the nano-body: the ratio of the area of the atom of the f-plane is very high. In this relationship, there will be a lack of covalent electric surface;: JJff is exposed to the outside world at this time, and it is urgent to capture the residual key of the thunder, but it is in a state of extreme instability, reducing power, so the following is called to win the face, p= The nano-body has a very strong chemical ball, which is caused by the exposure. Looking around the human beings, the ground friction produces electricity, and the water is quiet. During the rising process, the water vapor and air surface free radicals have a strong U-power 3! 3 surface atmosphere with negative electricity. Since the negatively charged atmosphere in the surrounding area captures 30% of the electricity, it immediately goes to the nanometer:: ίί: The nano-body can prove that the material has a crystalline structure, and the nano-bound state. Set the maximum energy level 0 to the slightly higher energy gap (3), such as the first! ^ household; ^. a is in the price band (2), the surface of the body + absorbing electrons can be seen as the same as the N-type semiconductor body), but there is a clear difference between the two, one is that the two n-type semiconductors are not charged, and the second is negatively negative = semiconductor The electrons (the body) are inside the lion. In the first part of the table, it is easy to absorb energy from the outside and enhance its energy level. When the energy obtained by the electron rt is greater than (corrected), the surface of the surface absorbs electrons into the conduction band (1); as shown in the second figure, the surface can be separated from the surface of the material to become free. Free radicals on the surface, then the surface free radicals are again licking their bodies and? Let go ί. According to the study by the inventors of the present invention, the surface absorption electrons of the nano surface have the following absorption energy and energy level changes: (1) photon impact causes conduction or free action; (2) low frequency light reflection and high frequency light transmission; (3) Particle impact causes conduction or free action; 1287521 (4) absorbs electromagnetic wave heat generation; (5) conducts heat and radiates heat to cause conduction or free action; (6) electric field pulls to conduct electricity or free action; (7) absorbs shock wave ( Supersonic pressure wave) causes conduction or free action; (8) Absorption of diluted wave (supersonic tension wave) causes conduction or free action; (9) Conductive or free action caused by catastrophic magnetic field induction; (10) Vertically perpendicular to each other The induction of static electric and magnetic fields causes conduction enhancement; (11) absorption of elastic waves (sonic and ultrasonic) causes conduction or free action;
(12) 摩擦引起導電或游離作用。 ’ 、奈,材料之所以具有諸多奇異特性,均因帶負電的表面吸著 電子、f容易吸收上述各種不同型態能並起能位變遷或游離化所引 起這些可異特性包括:(1)光觸媒作用;(2)化學觸媒作用;(3)雙親 表面現,;(4)雙疏表面現象;(5)分散作用;(6)高折光率;(7’)高誘電 率;(8)遠紅外^反射性;(9)反射遮光作用隨材料粒徑變小而^藍 移現象;(10)高電導率;(⑴高熱導率;(⑵高比熱;⑽防火 性;(14)乾式研磨起黏聚現象;〇5)低熔點;〇6)韌性增加;(17)蒸氣 壓上升;(18)對電磁波吸收性;(19)吸音性;毛細管現 太 ,粉體和塑膠等共混起架橋作用併使強度增加、導電率上’升二 ^變佳;(22)非磁性材料出現強磁性;⑽奈来磁性體的迴異磁 二Ξΐ;(24)巨磁電阻現象;(25)生物晶片的工作原理;⑽活ί生炭 作用;(27)性質奇異的奈米碳管;(28)奈米金屬粉體呈黑 尖端(奈米)放電現象;(32)強力的摩擦去污殺菌作用;(33) =(34)吸震作用;(35)奈米線具強力網捕功能;⑽)奈米導 f官严超導f财。此外,尚有許錯助奈米現象的應】 食口:介^口電子^牛蔽微機電、能源、環保、生物、醫學、保健、 食口口、化妝口口、古傳療法以及自然界現象等不勝牧舉。 和總上述奈米材料37項特性中編號第㈤號吸震作用 、扁諕第(21)號共混起架橋作用的原理為依據。 7 1287521 夺又不米材料單位表面積上 懸鍵均可捕捉到個一個歿=Ns個配位不足的懸鍵,並假設每 命,ΗΗ—— 耆電子,則球狀奈米材料之吸著電子(12) Friction causes conduction or free action. ', Nai, the reason why the material has many singular characteristics, because the negatively charged surface attracts electrons, f easily absorbs the above various types of energy and can change or dissipate energy levels, including: (1) Photocatalytic action; (2) chemical catalyst action; (3) parent surface appearance; (4) double sparse surface phenomenon; (5) dispersion; (6) high refractive index; (7') high induction rate; ) far infrared ^reflectivity; (9) reflection shading effect with material particle size becomes smaller and blue shift phenomenon; (10) high conductivity; (1) high thermal conductivity; ((2) high specific heat; (10) fire resistance; (14) Dry grinding to cohesion; 〇5) low melting point; 〇6) increased toughness; (17) vapor pressure rise; (18) electromagnetic wave absorption; (19) sound absorbing; capillary too, powder and plastic Mixing the bridge and increasing the strength, the conductivity is better than that of the rise; (22) the non-magnetic material is ferromagnetic; (10) the magnetic return of the nano magnetic body; (24) the giant magnetoresistance phenomenon; 25) The working principle of biochip; (10) the action of charcoal; (27) the carbon nanotubes with strange properties; (28) the black metal powder (nano) discharge phenomenon; (32) strong Friction decontamination sterilization; (33) = (34) shock absorbing effect; (35) nanowires having strong netting function; ⑽) nm derivative of f f superconducting strict financial officer. In addition, there are still some mistakes in helping the nano phenomenon. Food mouth: Jiekou Electronics ^ Niubu MEMS, energy, environmental protection, biology, medicine, health care, food mouth, makeup mouth, ancient transmission therapy and natural phenomena Waiting for the pasture. It is based on the principle of the shock absorption effect of No. (5) and the blending of the truss (21) in the 37 characteristics of the above-mentioned nanomaterials. 7 1287521 The surface area of the unit is not covered by a dangling bond. Each dangling bond can capture a dangling bond with insufficient 配=Ns coordination, and assuming that each life, ΗΗ-耆 electron, the absorbing electron of the spherical nano material
之體密度(單位體積之數目 3NSBody density (number of units per volume 3NS
Nd- r )Nd為 ⑴ 奈米5二式表示表面吸著電子體密度怪與 度愈大。 卩材料顆粒愈小,表面吸著電子體密 已知在溫度T之熱平衡愔形π杜处曰n 率倾為Fermi-Dirac ^函^為持月E之表面吸著電子的機 烟e<E儀τ ⑵ 1 _ 2me 3/2 (3)Nd-r)Nd is (1) The nanometer 5 formula indicates that the surface absorbing electron density is greater. The smaller the particle size of the ruthenium, the smaller the surface is absorbed by the electronic body. The heat balance at the temperature T is known to be the temperature of the π Du 曰 曰 率 为 为 F F F F F F F F F F F F F F F F F 持 持 持 持 持 持 持 持 持Instrument τ (2) 1 _ 2me 3/2 (3)
娜)dE= i [下](E_Eg)1/2dE 式中me為電子之有效質量,h = h/27r,h為Plank常數。傳 導帶單位體積之電子數Nc為娜)dE= i [下](E_Eg)1/2dE where me is the effective mass of the electron, h = h/27r, and h is the Plank constant. The number of electrons per unit volume of the conduction band Nc is
Nc= £ 切(E)/(E)dE=2(27cmekT/h2)3/V(Eg-_TNc= £ Cut (E)/(E)dE=2(27cmekT/h2)3/V(Eg-_T
Nc = n〇eNc = n〇e
-(E^)/kT η〇 = 2(27tmekTh -2x3/2 (4) (5) 8 1287521 今假設進入傳導帶1電子全部來自表面吸著電子。令Nd代表總表 面吸著電子密度;N〗分別代表已進入傳導帶和處於原有 基態能位之表面吸著電子密度。由於基態能位EpEg-Ed,所以-(E^)/kT η〇= 2(27tmekTh -2x3/2 (4) (5) 8 1287521 It is assumed that all of the electrons entering the conduction band 1 are from the surface absorbing electrons. Let Nd be the total surface absorbing electron density; 〗 Represents the electron occlusion density of the surface that has entered the conduction band and is at the original ground state energy level. Because of the ground state energy level EpEg-Ed,
1 +e(Eg_Ed,)/kT NJ = Nd/CEg-Ed-μ) = d1 +e(Eg_Ed,)/kT NJ = Nd/CEg-Ed-μ) = d
Nd Nd - Nd - Nd |^_g"(Eg-Ed^)/kT 因為e("_Eg+Ed)/kT >>卜所以⑹式可簡化為 C Nd Nd = e-(Eg-Ed^)/kT 注意N:= Nc關係,於是合併(4)和⑺二式得 g-(Eg^)/kT =(Nd/n〇)1/2e-Ed/2kT ⑹ ⑺ ⑻ (9)Nd Nd - Nd - Nd |^_g"(Eg-Ed^)/kT Because e("_Eg+Ed)/kT >>Bu, (6) can be simplified to C Nd Nd = e-(Eg-Ed ^)/kT Note the N:= Nc relationship, then combine (4) and (7) with the formula g-(Eg^)/kT =(Nd/n〇)1/2e-Ed/2kT (6) (7) (8) (9)
將(8)式代入(4)式,即得表面傳導電子密度為 Ncs(n〇Nd)1/2e-Ed/kT (9)式說明:奈米尺寸的絕緣體 粒愈:d愈大)和溫度(τ)較高(n◦較= 面積之電子發射率為 朝X方向(垂直於表面)單位 9 1287521 vxn(iT〇di>xdi>y(〇>z = n(^) dedi>ydi>z 〇〇) 式中ε為動能,n(P,r)為單位相空間電子數,可用Fermi-Dirac 分布函數/表示為 η(ίΓ〇= -\f (ll) h3 於是表面發射電流密度為 卜JeVxn茂,7)5 J-oo i: Je二叫此扣 h3Substituting equation (8) into equation (4), the surface conduction electron density is Ncs(n〇Nd)1/2e-Ed/kT (9): the nanometer-sized insulator particles are larger: d is larger and The temperature (τ) is high (n◦ is compared to the area where the electron emissivity is toward the X direction (perpendicular to the surface). Unit 9 1287521 vxn (iT〇di>xdi>y(〇>z = n(^) dedi>ydi> ;z 〇〇) where ε is kinetic energy, n(P,r) is the number of electrons per unit phase space, and can be expressed as η(ίΓ〇= -\f (ll) h3 by the Fermi-Dirac distribution function. For Ji JeVxn Mao, 7) 5 J-oo i: Je II called this buckle h3
q (e-Ef)/kT (12) 式中e為電子之荷電量,Ef為金屬之Fermi能。利用(e-Ef) > >kT條件,簡化後積分之,得 j = AT2e 0/kT (13) A = 4^mekT2h~3 = 120 amp/cm2-deg2 (14) Φ = E〇 -Ef (15) Ef = h' ( 3tt2Nc)2/3 2m (16) 綜觀(13)〜(16)諸式結果’即知溫度τ愈高、奈米材料顆粒 愈小(Nc愈大)時,熱放射電流密度愈大。 熱放射電流的發生’乃表示表面吸著電子脫離表面,並遺 表面自由基。 塑料是由分子比較小的單體行強鍵共價結合,成為線性 狀分子,惟線性鏈間的侧鍵較不易發生’或為弱鍵結合,所以 時間受熱力或外力作用’側鍵就車=容易受破壞或引起塑性變形。 1287521 本案奈米基材雖是塑料,惟因其中混有奈米顆粒材料,此共混物 在其加工流動過程會摩擦生熱,致使奈米顆粒表 離,並遺留表面自由基,強力吸引線性長鏈,而成為長鍵間= 橋物,遂使塑料材質結構起變化,由長鏈結構變成為網狀聚合物, 使材料的強度大幅提升。q (e-Ef)/kT (12) where e is the charge of the electron and Ef is the fermi energy of the metal. Using the (e-Ef) >>kT condition, the post-integral is simplified, and j = AT2e 0/kT (13) A = 4^mekT2h~3 = 120 amp/cm2-deg2 (14) Φ = E〇- Ef (15) Ef = h' ( 3tt2Nc) 2/3 2m (16) Looking at the results of (13) ~ (16), the higher the temperature τ and the smaller the nanoparticle (the larger the Nc), The higher the thermal emission current density. The occurrence of thermal radiation currents indicates that the surface attracts electrons off the surface and free radicals. The plastic is covalently bonded by a relatively small molecule of a molecule, and becomes a linear molecule. However, the side bond between the linear chains is less likely to occur or is a weak bond, so the time is affected by heat or external force. = easily damaged or caused plastic deformation. 1287521 The nano-substrate in this case is plastic, but because it is mixed with nano-particle material, the blend will rub and heat during the processing flow, causing the nano-particles to detach, leaving surface free radicals and attracting linearity. The long chain becomes the long bond between the bridges and the bridge. The structure of the plastic material changes, and the long-chain structure becomes a network polymer, which greatly increases the strength of the material.
至於本案也利用上述奈米材料37項特性中編號第(34)吸震作 =理,係紐高驗阻抗的奈綠體⑵與較健波阻抗的樹脂 (3)相結合之混合物作為吸震材料體,如第三圖所示。一旦震 波進入吸震材料,則震波(壓力波)就在兩種物質界面行反&作 用。^震波在原物質⑴的震波速度Usi、質點速度&、質點密度 其抵達承接物質(2)時,壓力即由Pl變成P2,質點 射和穿人伽,此時反㈣波速度為κ, 震波速度為US2,如細圖所示。根據f量和動量守怪關係分 別传: pi U S1+ p 01 Usi = 0 (17) P2 - Pi Usi (UP2 » Upi) ? (18) Pl =i〇〇i Usi Upi , (19) P2 - /〇 02 Us2 Up2, (20) 式中Ρΰ1、ρ°2為震波未到時的質量密度 ,運用(17)至(20)式,即 求得: Up2 2p〇iUsi =----— Up丨 poiUsi + p〇2us2 (21) 2p02Us2As for the case, the mixture of the above-mentioned seven characteristics of the nano-materials is numbered (34), and the mixture of the nano-organic impedance (2) and the hard-wave-resistance resin (3) is used as the shock absorbing material. As shown in the third figure. Once the shock enters the shock absorbing material, the shock wave (pressure wave) acts as an inverse & ^The shock wave is at the seismic velocity Usi of the original matter (1), the particle velocity &, and the density of the particle reaches the receiving material (2). The pressure changes from P1 to P2, and the mass point shoots and wears the gamma. At this time, the inverse (four) wave velocity is κ, the shock wave. The speed is US2, as shown in the detail. According to the amount of f and momentum, the relationship is pi U S1+ p 01 Usi = 0 (17) P2 - Pi Usi (UP2 » Upi) ? (18) Pl = i〇〇i Usi Upi , (19) P2 - / 〇02 Us2 Up2, (20) where Ρΰ1 and ρ°2 are mass densities when the shock wave is not reached, use (17) to (20) to find: Up2 2p〇iUsi =----- Up丨poiUsi + p〇2us2 (21) 2p02Us2
(22) 1287521 【圖式簡單說明】 ita為奈米表面吸著電子的能位圖。MM.: (1)—-傳導帶,(2)———價帶,(3) 0 一―價帶最高能位為零, ’、 Ea-一表面吸著電子的基態能位, Eg一—傳導帶的最低能位, E一傳導帶的最高能位,Ed=Eg_Ea。 蓋土匾為:金屬表面傳導電子之能位圖。 邏魂· φ~ -一功函數, E〇 -_〇 傳導帶的最低能位為零,①--~傳導帶,②———直处(22) 1287521 [Simple description of the diagram] ita is the energy map of the electrons on the surface of the nanometer. MM.: (1)—the conduction band, (2)—the valence band, (3) 0—the highest energy level of the valence band is zero, ', Ea- a surface absorbs the ground state energy of the electron, Eg - the lowest energy level of the conduction band, the highest energy level of the E-conduction band, Ed = Eg_Ea. The cover soil is: the energy level map of the conduction electrons on the metal surface. Logic soul · φ~ - a work function, E〇 -_〇 The lowest energy level of the conduction band is zero, 1--~ conduction band, 2———straight
Ef —〜-Fermi 能位, -表面傳導電子從最低驗G脫離表面所 需能量 表面 凰為:震動吸收材料體。 遢號上·· 1 一—震動吸收材料體。 粒徑麵_下之金屬、金屬氧化物、 3 較低震波阻抗之樹脂。 陶瓷或 阻抗奈米顆 1一〜樹脂, p01樹脂原有密度, 2 --奈米顆教, 3—界面, P 02〜一奈米顆粒原有密度 1287521 pi-一受震壓後之樹脂密度, P2-一反射後之震波壓力, US1---反射之震波速度’ UP2---反射後質點速度’Ef —~-Fermi energy level, - Surface conduction electrons are required to escape from the surface of the lowest G. Surface: Phoenix is the vibration absorbing material body. On the nickname · 1 1 - shock absorption material body. Resin with a particle size _ under metal, metal oxide, and 3 lower shock impedance. Ceramic or impedance nanoparticle 1 ~ resin, p01 resin original density, 2 - nanometer teach, 3 - interface, P 02 ~ one nanometer particle original density 1287521 pi - a resin density after shock , P2-shock wave pressure after reflection, US1---reflection wave velocity 'UP2---reflection particle velocity'
Pi---反射前之震波壓力,Pi---the shock wave pressure before reflection,
Usi-一原有震波速度,Usi- an original shock wave speed,
Upi---反射前質點速度,Upi---the mass velocity before reflection,
Us2---奈来顆粒震波速度。 第五圖為:震波從較較高震波阻抗的奈米顆粒進入低震波阻抗的 樹脂時所發生的反射狀態。 圖號: 1—奈米顆粒’ 2—樹脂’ 3—界面’ Ρ οι---奈米顆粒原有密度’ P〇2---樹脂原有密度’ pi-一受震壓後之奈米顆粒密度,朽一-反射前之震波壓力, P2---反射後之震波壓力, Usi 原有震波速度,Us2---Neilai particle shock wave velocity. The fifth picture shows the reflection state of the shock wave when the nanoparticle of the higher seismic impedance enters the resin with low seismic impedance. Drawing No.: 1—Nano particle '2—Resin' 3—Interface' Ρ οι---Natural particle original density 'P〇2---Resin original density' pi-A nanometer after shock Particle density, swell-shock wave pressure before reflection, P2---shock wave pressure after reflection, Usi original shock wave velocity,
Jsl· 反射震波速度’ US2 樹脂内震波速度’Jsl· Reflected seismic velocity ’ US2 resin internal shock wave velocity’
Upi---反射前質點速度 UP2-一反射後質點速度。 【主要元件符號說明】Upi---Pre-reflection particle velocity UP2-After-reflection particle velocity. [Main component symbol description]
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| TW94105132A TWI287521B (en) | 2005-02-22 | 2005-02-22 | A ship propeller made of a shock-absorbing and strength-reinforced nano-plastics material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94105132A TWI287521B (en) | 2005-02-22 | 2005-02-22 | A ship propeller made of a shock-absorbing and strength-reinforced nano-plastics material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200630269A TW200630269A (en) | 2006-09-01 |
| TWI287521B true TWI287521B (en) | 2007-10-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94105132A TWI287521B (en) | 2005-02-22 | 2005-02-22 | A ship propeller made of a shock-absorbing and strength-reinforced nano-plastics material |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI287521B (en) |
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| Publication number | Publication date |
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| TW200630269A (en) | 2006-09-01 |
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