TWI327517B - - Google Patents
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- TWI327517B TWI327517B TW94105158A TW94105158A TWI327517B TW I327517 B TWI327517 B TW I327517B TW 94105158 A TW94105158 A TW 94105158A TW 94105158 A TW94105158 A TW 94105158A TW I327517 B TWI327517 B TW I327517B
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- 239000000463 material Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
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- 235000007164 Oryza sativa Nutrition 0.000 description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
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- 235000006679 Mentha X verticillata Nutrition 0.000 description 1
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- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
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- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
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Description
1327517 九、發明說明: 【發明所屬之技術領域】 依據^創之奈米科學原理,利用粒徑丨〜丨⑽咖之適量碳、 金 rrs , ▲ w vi“u ^填充料’將其與含有適量溶狀雜共混 親===方^約-=2 金屬氧化物、喊或礦物等奈米粉體取代塑 ~ 句,U 通削 卜斗共混以生成4 ,^ 丨字其以約lm/m· =在太空火箭、卿、反倾、喷射戰機 述諸裝備在飛行伽其外殼與= 【先前技術】 行過i空因t與:水 =能影響錢__脸備讀料全,*=^^音之 【發明内容】 依據:======性,目前尚缺乏理論 學諸問題,包括錢奈米科 解除之前奈米研發工 其所以然_種奈米現象; 多新用途;克服當前乾式·境;可發掘奈米材料更 材料大小縮小至太+ 不米粉體所遭遇之技術瓶頸。 不权対;絲軒的_比料高。本案 奈米粉奈祕麵鱗發現,凡 魚雷等裝備外殼之奈米防祕、反飛彈、噴射戰機、 1327517 合出現缺少此俨雷早成’其初生表面原子因曝露於外界關係, 殘鍵,而處於極不安定狀態,此時返 '2 產生”,、水几對流上升過程中,水汽愈空氣相摩痒生雷 結果,水汽獲得正電並遺留地面大氣帶負電 具有極強還原力,-日夺祕抑A 水表面自由基 f取^子而趨於安定’所以奈米體的表面通常都帶有表面吸著 ί^ϊΓ^ί電感測器靠近奈米體即可證實奈米表面吸著 ΪΙίΐί2表面殘鍵多屬強力的共價鍵,所以表面吸著電子 由狀也,而是處於束缚狀態。設若材料且έ士晶紝構則太 米表面吸著電子的絲脉& = 能隙(3)中,如第-圖所示。# W評⑺取鳴位㈣尚的1327517 IX. Description of the invention: [Technical field to which the invention belongs] According to the scientific principle of the nanotechnology of the invention, the appropriate amount of carbon, gold rrs, ▲ w vi "u ^ filler" of the particle size 丨~丨(10) Appropriate amount of miscellaneous blending pro === square^about-=2 metal oxide, shouting or minerals, etc. instead of plastic ~ sentence, U pass-through blend to generate 4, ^ 丨 word to about lm /m· =In the space rocket, Qing, anti-dip, jet fighters, the equipment is in the flight gamma shell and = [previous technology] I have airspace t and: water = can affect the money __ face reading materials, *=^^音[The content of the invention] According to: ====== Sex, there is still a lack of theoretical problems, including the case of the nano-researcher before the release of Chen Namiko. Overcoming the current dry environment; can explore the nano-materials to reduce the material size to too + the technical bottleneck encountered by the non-rice powder. Not right; silk Xuan's _ higher than the material. This case nano-nose secret surface scale found, where Torpedo and other equipment shells of the nano anti-mystery, anti-missile, jet fighter, 1327517, the lack of this 俨雷早成' its birth table The atom is exposed to the external relationship, the residual bond, and is in a state of extreme instability. At this time, the '2 is generated.” During the process of rising convection of water, the water vapor is more itch and thunder, and the water vapor is positively charged and the ground is left. The negative charge of the atmosphere has a strong reducing power, and the surface of the water is free from the surface of the water. The surface of the nano-body usually has a surface absorbing ί^ϊΓ^ί The nano-body can confirm that the surface of the nano-adsorbed ΪΙίΐί2 surface is mostly a strong covalent bond, so the surface is attracted by electrons, but is in a restrained state. If the material is used and the structure of the gentleman is too much, the surface of the rice is absorbing the electrons of the wire & = energy gap (3), as shown in the figure. #W评(7)取鸣位(四)尚的
體)面❹電何翻N型半導财的電子(施 型ii體不H的^其—是奈米體帶有豐富的負電,而N :於=的ΐ;,很容駿外界吸收能量並提升魏位。例 能位就進人傳導帶⑴;如第二圖表示,表‘吸著S 貼=超k EfM功函數φ值時,即可脫離奈 狀態,並遺留原位成為表面自由基,鋏後表面,離 子並釋放能量。根據本案發明人研究顯ΪG = ίϋ訂❹種方式吸钱並發生跡變化: ϋ)光子揸擊引起導電或游離作用; (2) 低頻光反射及高頻光透射作用; (3) 粒子撞擊引起導電或游離作用; (4) 吸收電磁波生熱作用; , (5) 傳導熱和幅射熱引起導電或游離作用; 1327517 (6) 電場牽引起導電或游離作用; (7) 吸收震波(超音速壓力波)引起導電或游離作用; (8) 吸收稀釋波(超音速拉力波)引起導電或游離作用; (9) 受劇變磁場感應引起導電或游離作用; (10) 受互為垂直的靜態電場和磁場之感應引起導電增強作用; (11) 吸收彈性波(音波和超音波)引起導電或游離作用; (12) 摩擦引起導電或游離作用。) ❹ ❹ 何 翻 翻 N N N N N N N N N N N N N ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii ii And increase the Wei position. The example energy level enters the human conduction band (1); as shown in the second figure, when the table 'sucks S paste = super k EfM work function φ value, it can be separated from the nai state, and left in place to become surface free The base, the rear surface, the ions and the release of energy. According to the inventor of the present study, G = ϋ ϋ ϋ 吸 吸 吸 吸 吸 吸 吸 吸 吸 吸 吸 吸 吸 吸 吸 吸 吸 吸 吸 吸 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光(3) Electromagnetic or free action caused by particle impact; (4) Electromagnetic heat absorption; (5) Conductive heat and radiation heat cause conduction or free action; 1327517 (6) Electric field traction to conduct electricity or free action (7) Absorbing shock waves (supersonic pressure waves) cause conduction or free action; (8) Absorbing dilution waves (supersonic tension waves) causing conduction or free action; (9) Conducting or causing effects due to induced magnetic field induction; 10) caused by the induction of static electric and magnetic fields perpendicular to each other Electrical enhancement; (11) absorbed by the elastic waves (sonic and ultrasonic) or the free action causes conductive; (12) a conductive or free friction action.
奈^材料之所以具有諸多奇異特性,均因帶負電的表面吸著 電子f容,吸收上述各種不同型態能並起能位變遷或游離化所引 起。這些奇異特性包括:(1)光觸媒作用;(2)化學觸媒作用;(3)雙親 ,面現$⑷雙疏表面現象;⑸分散作用;⑹高折光率;(7’)高誘電 率;(8)遠紅外線反射性;(9)反射遮光作用隨材料粒徑變小而起藍 移現象;(10)高電導率;(11)高熱導率;〇2)高比熱;(13)防火 =;(14)乾式研磨起黏聚現象;(15)低熔點乂16)韌性增加;(17)蒸氣 ,上升;(18)對電磁波吸收性;(19)吸音性;(20)毛細管現象.(21)奈 米粉體/和橡膠、塑膠等共混起架橋作用而使強度增加、導’電率i =阻氣〖生邊佳;(22)非磁性材料出現強磁性;(23)奈米磁性體的迥 =學特性;(24)巨磁t阻現象;(25)生物晶片的工作原理;⑽活 里作用;(27)性質奇異的奈米碳管;(28)奈米金屬粉體呈 奈米金屬粉的電阻呈現負溫度係數;⑽絨毛保溫功 H从rf (奈米)放電現象;(32)強力的摩擦去污殺菌作用;(33) ;(34)吸震作用;(35)奈米線具強力網捕功能;(36)奈米導 低溫料電縣。此外,尚有許錯助奈米現象的應i例 電,元件、微機電、能源、環保、生物、醫學、保健用二 °匕妝00、古傳療法以及自然界現象等不勝牧舉。 Μ 用上述奈米材料37項特性^編號第(34)號吸震作用 年射第(21)號共混起架橋強化作用的原理為依據。 積上有Ns個陳从的雜,並假設每 懸鍵均可捕㈣個-個吸著電子,則球狀奈米材料之g [S3 0) 1327517The reason why the material has many singular characteristics is that the negatively charged surface absorbs the electron f-capacitance, absorbing the above various types of energy and causing the energy level to change or dissociate. These singular characteristics include: (1) photocatalytic action; (2) chemical catalyst action; (3) parental, face ($) double sparse surface phenomenon; (5) dispersion; (6) high refractive index; (7') high induction rate; (8) Far-infrared reflectivity; (9) Reflective shading acts as a blue-shift phenomenon as the particle size becomes smaller; (10) High conductivity; (11) High thermal conductivity; 〇 2) High specific heat; (13) Fire prevention = (14) dry grinding to cohesion; (15) low melting point 乂 16) increased toughness; (17) vapor, rising; (18) electromagnetic wave absorption; (19) sound absorption; (20) capillary phenomenon. (21) Nano-powder / blended with rubber, plastic and other bridges to increase the strength, lead 'electricity i = gas barrier 〖 raw edge good; (22) non-magnetic materials appear strong magnetic; (23) nano The magnetic properties of the magnetic body; (24) giant magnetic t resistance phenomenon; (25) the working principle of the biochip; (10) the active action; (27) the singular carbon nanotubes; (28) the nano metal powder The resistance of the nano-metal powder exhibits a negative temperature coefficient; (10) the thermal insulation work of the fluff from the rf (nano) discharge phenomenon; (32) the strong friction decontamination sterilization; (33); (34) shock absorption; (35) Nano wire has strong Catching function; (36) feed a low temperature electrically conductive nm County. In addition, there are still many mistakes in helping the nanometer phenomenon, such as electricity, components, micro-electromechanical, energy, environmental protection, biology, medicine, health care, 古 疗法 00, ancient transmission therapy and natural phenomena. Μ Based on the principle of the above-mentioned nano-materials 37 characteristics ^ No. (34) shock absorption effect of the annual expansion of the (21) blended bridge. There are Ns culminations in the accumulation, and it is assumed that each dangling bond can capture (four) - one absorbing electron, then the spherical nano material g [S3 0) 1327517
Nd 式中rNd where r
之體密度(單位體積之數目)^^為 3NS r 為奈米球之半捏。(1彳 一 ,之尺寸狀_,叫米 率傾為Feoii-Dirac、為持能量£之表面吸著電子的機 /(E) = β(Ε-μ)/ΚΤ+1 兰 0-(Ε·μ)/|ςΤ (2) 因為(E-//)>>kT;式中 k 為 Boltzman 常數,# 為 Fermi 能。 又能量介於E與E+dE間之單位體積狀態數χ (E)dE為 X(E)dE= ^ [-|^] W/2dE Ο) Φ 式中me為電子之有效質量,h = h/27T,h為Plank常數。傳導帶單 位體積之電子數队為The body density (the number of unit volumes) ^^ is 3NS r is the half pinch of the nanosphere. (1彳1, the size of the _, called the rice rate is Feoii-Dirac, the machine that holds the electrons on the surface holding energy /(E) = β(Ε-μ)/ΚΤ+1 兰0-(Ε ·μ)/|ςΤ (2) Because (E-//)>>kT; where k is the Boltzman constant, # is the Fermi energy, and the energy is between the unit volume state number between E and E+dEχ (E)dE is X(E)dE= ^ [-|^] W/2dE Ο) Φ where me is the effective mass of the electron, h = h/27T, and h is the Plank constant. The number of electronic units with conduction unit volume is
Nc= G X(E)/(E)dE= 2(27imekT/h2)3/2e伽)/kTNc= G X(E)/(E)dE= 2(27imekT/h2)3/2e ga)/kT
Nc = n〇e-(E-, (4) n〇 = 2(27〇nekTh-2)3/2 (5) 1327517 ③_子。令Nd代表總表 態能位之表面^二d]代表已進人傳導帶和處於原有基 衣曲及考電子街度。由於基態能位民=]^屯所以 =Nd/(EgL — Nd 1 +e(Eg-Ed-K)/kT 5 Nd = Nd-Nd°=--__ 14-ρ"(%Έ(|-μ)^Τ 闵兔 p("-Eg+Ed)/kT、 " >> 1,所以(6)式可簡化為 c Nd ⑹ ⑺ ⑻ (9)Nc = n〇e-(E-, (4) n〇= 2(27〇nekTh-2)3/2 (5) 1327517 3_子. Let Nd represent the surface of the total surface energy level ^2 d] represents Into the conduction belt and in the original base clothing and test electronic street. Because the ground state energy can be ==^^ so =Nd/(EgL — Nd 1 +e(Eg-Ed-K)/kT 5 Nd = Nd -Nd°=--__ 14-ρ"(%Έ(|-μ)^Τ 闵兔p("-Eg+Ed)/kT, ">> 1, so (6) can be simplified For c Nd (6) (7) (8) (9)
e'Eg-Ed-pykT 注意N〗 = NC關係’於是合併(4)和⑺二式得e'Eg-Ed-pykT Note N〗 = NC relationship' then merge (4) and (7)
e-(Eg-^T^(Nd/n〇y/2e.Ed/2kTE-(Eg-^T^(Nd/n〇y/2e.Ed/2kT
將⑻式代入⑷式’即得表面傳導電子密度為 Nc ^ (n〇Nd)1/2e'Ed/kT (9)式说明.奈米尺寸的絕緣體不且 ^ ^ ^ :粒祕愈大)和溫度⑺較高咖時, 金屬導體的表面電子會從表喊 面所需最,量(Φ),功函數㈣一導3逃: 不。今考慮動量介於f和m =^圖所 面積之電子魏率冑 m万mu於表面)早位 νχη(Ι>, Γ )dl>xdl>ydl>2 = Π(?5 Γ) dsdl>ydl>z (10) νχη(Ι>, Γ )dl>xdl>ydl>2 = Π(?5 Γ) dsdl>ydl>z (10) (11) 分布函1=^、為n(P,r)為單位相空間電子數’可用Fermi-Dirac h3 於 是表面發射電流密度為Substituting equation (8) into equation (4), the surface conduction electron density is Nc ^ (n〇Nd) 1/2e'Ed/kT (9). The nanometer-sized insulator is not ^ ^ ^ : the greater the secret of the grain) And when the temperature (7) is higher, the surface electrons of the metal conductor will be the most needed from the surface of the surface, the amount (Φ), the work function (four) and the lead escape: No. Now consider the momentum of the electrons in the area of f and m = ^ map, 胄m million mu on the surface) early νχη(Ι>, Γ) dl>xdl>ydl>2 = Π(?5 Γ) dsdl>ydl> ;z (10) νχη(Ι>, Γ )dl>xdl>ydl>2 = Π(?5 Γ) dsdl>ydl>z (10) (11) Distribution function 1=^, is n(P,r) For the unit phase space electron number 'available Fermi-Dirac h3 then the surface emission current density is
j =ieV 2e 雜j =ieV 2e
Ef+Φ d^yd^z deEf+Φ d^yd^z de
g (e-Ef)/kT (12) ^中e為電子之荷電量,Ef為金屬iFermi能。 打條件’簡化後積分之,得 bf)>> j = ΑΤνφ/1ίΤ (13) (14) (15) (16) A -47imekT2h3 =120amp/cm2-deg2 Φ = E〇- Ef h2g (e-Ef)/kT (12) ^ where e is the charge of the electron and Ef is the metal iFermi energy. After the condition 'simplified and integrated, bf)>> j = ΑΤνφ/1ίΤ (13) (14) (15) (16) A -47imekT2h3 =120amp/cm2-deg2 Φ = E〇- Ef h2
Ef=~2m(37c2Nc)2/3 综觀(13)〜(16)諸式結果,即知溫度T愈高、奈 愈小(Nc愈大)時,熱放射電流密度愈大。 /顆粒 熱放射電流的發生,乃表示表面吸著電子脫離表 表面自由基。 並遺留 塑料是由分子比較小的單體行強鍵共價結合,成為 狀分子,惟線性鏈間的側鍵較不易發生或為弱鍵結合,所、長鏈 間受外力或熱力作用,側鍵就較容易受破壞或引起^性變^^長時 1327517 吸著電子起游離,並遺留表面自由基,強; 起變化,由長鏈結構變成 ^在原物質Cl}的震波速度Usi、質點迷度仏 波速度二 (17) (18) (19) (20) P 1 〇si+ Ρ οι Usi = 0, Ρ2 - Pi =ρ, Usi (Up2 - Upi),Ef=~2m(37c2Nc)2/3 Looking at the results of (13) to (16), it is known that the higher the temperature T and the smaller the N (the larger the Nc), the higher the thermal emission current density. / granules The occurrence of thermal radiation currents indicates that the surface attracts electrons away from surface free radicals. And the leftover plastic is covalently bonded by the relatively small molecule of the molecule, and becomes a molecule, but the side bond between the linear chains is less likely to occur or is weakly bonded, and the long chain is affected by external force or heat. The bond is more susceptible to damage or causing a change in the length of the ^1327517. The electrons are liberated, and the surface free radicals are left, strong; the change, from the long-chain structure to the vibration velocity of the original substance Cl}, Usi, the mass point fan Degree of chopping speed two (17) (18) (19) (20) P 1 〇si+ Ρ οι Usi = 0, Ρ2 - Pi = ρ, Usi (Up2 - Upi),
Pi ~ i〇 01 Usi Upi , P2 = P 02 Us2 Up2 , 式中心、p〇2為震波未到時的質量密度運用⑽至(ϋ即求 得:Pi ~ i〇 01 Usi Upi , P2 = P 02 Us2 Up2 , the center of the formula, p〇2 is the mass density of the shock wave when it is not used (10) to (ϋ):
Up2 2 p 01UslUp2 2 p 01Usl
Up丨 p 01 Usi +P02U32 (21) P. 2 0 〇2Us2 (22) Pi P〇lUsi +P〇2Us2 利用(21)和⑽式可分析震波吸收體的震波吸收能力。考慮 S] 1327517 下列兩種情形: i)當震,,„震波阻抗(p〇i Us⑽樹脂進入較高震波阻抗 Γ 米顆粒時,因p°2Us2>~Usi關係,即得似", 果表7F反射波為如第_所示之震波(壓力波)。 言’奈来材料顆粒具有將壓讀之能送還樹 增大,因此具有增加壓縮耗能的作用,惟因樹 ^和不米顆粒均為雜,壓_甚小,所以壓縮耗能效果不 )波„震波阻抗(PQ1 Usi)的奈米顆粒進入較低震波阻 的樹脂時,因pQiUsi>~Us2關係,即得 二此結果表示反射波為如第五圖所示之稀釋波(拉力 S·電子生拉#力關係,首當其衝的奈米表面 .r_位;===:表面吸著電 r4i子=====收=奈=表 震過財,吸紐料__雜收震^,並且在吸 【實施方式】 奈求氧化物、喊或礦物等 料厚度加襯在太空mint法^將其以約1_之材 外殼之内表面上,戰機、魚雷等裝備 :、水外界流體相撞擊====== 内種種儀器設備之操作安全。 攸而侍增加裝備 12 1 S3 1327517 【圖式簡單說明】 第一圖:奈米表面吸著電子的能位圖。 (1)—傳導帶,(2)---價帶,(3)—能隙, 0— 價帶最高能位為零,Up丨 p 01 Usi +P02U32 (21) P. 2 0 〇2Us2 (22) Pi P〇lUsi +P〇2Us2 The shock absorption capacity of the shock absorber can be analyzed by equations (21) and (10). Consider S] 1327517 in the following two cases: i) When the earthquake, „shock impedance (p〇i Us(10) resin enters the higher seismic impedance Γ granules, because p°2Us2>~Usi relationship, it is like “,” The reflected wave in Table 7F is the shock wave (pressure wave) as shown in _. The 'Nailai material particle has the function of increasing the energy of the pressure reading, so it has the effect of increasing the compression energy, but the tree ^ and the rice The particles are all heterogeneous, the pressure _ is very small, so the compression energy consumption effect is not.) When the nanoparticle of the shock wave impedance (PQ1 Usi) enters the resin with lower shock resistance, the result is obtained by pQiUsi>~Us2. It means that the reflected wave is a dilution wave as shown in the fifth figure (the force of the force S (electron force pull # force, the first surface of the nano surface. r_ bit; ===: surface absorbing electricity r4i sub ===== = Nai = Table shocked the money, sucking the material __ miscellaneous shock ^, and in the suction [implementation] Nai seeking oxide, shouting or minerals such as the thickness of the material in the space mint method ^ will be about 1_ On the inner surface of the material shell, the equipment such as fighters and torpedoes: the external fluid phase of the water collides ====== The operation safety of various instruments and equipment inside. Preparation 12 1 S3 1327517 [Simple description of the diagram] The first picture: the energy level map of the electrons on the surface of the nanometer. (1) - Conductive band, (2) - valence band, (3) - energy gap, 0 — the highest energy level of the valence band is zero.
Ea—表面吸著電子的基態能位,Ea—the surface absorbs the ground state energy of the electron,
Eg---傳導帶的最低能位, E—傳導帶的最高能位,Ed=Eg-Ea。 第二圖:金屬表面傳導電子之能位圖。 Φ---功函數, Ef---Fermi能位, E〇---表面傳導電子從最低能位0脫離表面所需能量, 0---傳導帶的最低能位為零, ①_ _ _傳導帶’②_ _ _真空’③_ _ 一表面。 第三圖:震動吸收材料體。 1- --奈米吸震材料體。 2- --較高震波阻抗粒徑1〜lOOnm之碳、金屬、金屬氧化物、陶瓷 或礦物等奈米級粉粒。 3— 較低震波阻抗之樹脂。Eg---the lowest energy level of the conduction band, E-the highest energy level of the conduction band, Ed=Eg-Ea. Figure 2: Energy level map of electron conduction on the metal surface. Φ---work function, Ef---Fermi energy level, E〇---the energy required for the surface conduction electrons to detach from the lowest energy level 0, 0---the lowest energy level of the conduction band is zero, 1_ _ _ Conduction band '2_ _ _vacuum'3_ _ a surface. Figure 3: Shock absorbing material body. 1- -- Nano shock absorbing material body. 2--Nano-grade particles such as carbon, metal, metal oxide, ceramic or mineral with a high shock wave impedance of 1 to 100 nm. 3—Resin with lower seismic impedance.
[SJ 13 1327517[SJ 13 1327517
SmM.:震波從較低震波阻抗的樹脂進入較高震波阻抗奈米顆 粒時所發生的反射狀態。 1 樹脂’ 2 奈米顆粒, 3 界面, P〇i—樹脂原有密度, /〇>-一受震壓後之樹脂密度, P2---反射後之震波壓力, Usl 反射之震波速度, UP2—反射後質點速度, P 02---奈米顆粒原有密度, Pi---反射前之震波壓力, Usi---原有震波速度5 Upi---反射前質點速度, US2奈米顆粒震波速度。 差互凰:震波從較較高震波阻抗的奈米顆粒進入低震波阻抗的 樹脂時所發生的反射狀態。SmM.: The state of reflection that occurs when a shock wave enters a higher seismic impedance nanoparticle from a resin with a lower seismic impedance. 1 resin ' 2 nano particles, 3 interface, P〇i - resin original density, /〇> - the density of the resin after the shock, P2---the shock wave pressure after reflection, the shock wave velocity of Usl reflection, UP2—the particle velocity after reflection, P 02—the original density of nano particles, Pi—the shock wave pressure before reflection, Usi—the original seismic velocity 5 Upi—the velocity before reflection, US2 nm Particle shock velocity. Poor mutual phoenix: The reflection state of the shock wave when the nanoparticle of a higher seismic impedance enters the resin of low seismic impedance.
1 奈米顆粒, 2—樹脂, P 01- 奈米顆粒原有密度, P 1- 一受震壓後之奈米顆粒密度, P2— -反射後之震波壓力, --反射震波速度, Upi- - --反射前質點速度,1 nanoparticle, 2-resin, P 01- nanoparticle original density, P 1- the density of nanoparticle after shock, P2—shock pressure after reflection, --reflection shock velocity, Upi- - - the velocity of the particle before reflection,
3—界面, P〇2樹脂原有密度,3—interface, the original density of P〇2 resin,
Pi---反射前之震波壓力, Usl-一原有震波速度,Pi---the shock wave pressure before reflection, Usl- an original shock wave velocity,
Us2一—樹脂内震波速度,Us2—the resin internal shock wave velocity,
Ik---反射後質點速度。 复六邋:裝備外殼内襯奈米吸震材料之示竟圖 1— 裝備外殼, 2— 裝備尾部外殼, 3— --奈米吸震材料。 【主要元件符號說明】 14Ik---the velocity of the particle after reflection. Complex six 邋: the outer casing of the equipment is lined with nano-shocking material. Figure 1 - Equipment shell, 2 - equipped with tail shell, 3 - - nano shock absorbing material. [Main component symbol description] 14
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