1286355 玖、發明說明： 【發明所屬之技術領域】 本發明係有關積體電路製造之領域，更詳今+ y σ ’ 係有 關在基板上沉積金屬及/或從基板移除金屬之各種樂生步 驟的過程中，以電化學方法處理基板者。 【先前技術】 積體電路（ic)之多層互連技術中所使用的材料為、薄+ 導體及薄膜絕緣體。為了製造導電薄膜，已廣泛地以叙和 紹合金結合作為絕緣體之二氧化矽（Si〇2)一起使用。為了 進一步提升裝置性能，就1C的信號傳輸延遲及功率消耗而 言，可結合低k介電材料的銅現在越來越普遍取代鋁和二 氧化矽。此外，銅技術之應用會導致所需要的金屬化層: 數減少。在製造多層互連系統方面，電鍍和無電鍍覆形式 之鑛覆及反向製程，亦稱為電拋光製程，已成為廣泛❹ 的金屬沉積/移除技術。 為了獲得金屬層所要求的品質，典型係於電化學金屬 鐘覆製程巾❹各種化H在絲城覆金屬所使用的 許多電解液之中，無機酸係作為鑛覆溶液之主要成分。硫 酸或嶙酸細各種濃度廣泛地使用。不論所供應的硫酸和 碟酸的漠度，已知硫酸和砩酸會敍刻銅。當半導體基板上 所形成之金屬區域處可輕易地得到氧時，會進一步提高姓 刻速率’如同在習知鐘覆制 級復裏知中由於周圍空氣含有的氧所 導致的情形一樣。 由於氧、二氧化硫（可微量存在於周圍環境中）及水（包 (修正本）92358 5 1286355 3在以水稀釋的酸中)的存在，可能會發生在半導體基板上 所形成之金屬顯著程度的氧化及褪色。這種情況在後續輸 '儲存冲洗和清洗動作（其所有動作都在潮濕條件下， 2 口之在促使銅氧化及褪色的條件下進行）的過程中，甚至 曰更惡化。而對於進行相當類似電鍍的電拋光製程（但其中 的離子流為&向者）之含銅基板也有㈣的情形。 由於銅越來越普遍用於半導體製造，而且如上所述， 由於曝露的銅表面具有容易和氧反應形成腐钱及趟色的傾 向因此這種腐蝕及褪色並且可能會傾向於損害所得到表 面的品質或是對於後續製程步驟有不利的影響。有鑑於上 述内谷’纟+導體基板上鍍覆及電拋光銅顯然&完成之後 的積體電路之可靠度的關鍵。 因此，存在著對於在不過度降低表面品質的情況下， 形成和處理金屬層（特別是銅層）之裝置與方法的需求。 【發明内容】 本發明係針對減少與鍍覆及/或電拋光含金屬基板之 如之中及之後的暴露金屬表面接觸之氧及二氧化硫的量 之方法與I置。ϋ由顯著降低在欲處理或欲以其他方法處 理之基板的整個表面上之氧及/或二氧化硫的分壓，可降低 暴露金屬表面與這些反應性周圍成分發生化學反應的機 率。 根據本發明之一具體實例，電化學方法處理基板之處 理工具包括-鍍覆反應器及一包圍該鍍覆反應器之罩蓋， 該罩蓋係定義出含有内部氣體氣氛（gas atm〇sphere)之内 (修正本）92358 6 1286355 體積。藉此，係配詈与·置， 置4罩座以貝質上避免與周圍大氣的氣 體交換。 根據本發明之另一具體實例，電化學方法處理基板之 處理工具包括-鍍覆反應器及一供氣系統，該供氣系統係 配置將惰性氣流（flow of inert gas)提供至該鐘覆反應器， 以減少該鍵覆反應器中氧濃度及二氧化疏濃度之至少其中 之一。 根據本發明之另一具體實例，電化學方法處理基板之 方法包括提供配置用以電化學方法處理基板之處理工具。 其次’形成圍繞該基板之氣體氣氛，其中該氣體氣氛比圍 繞該處理工具的周圍大氣具有較低的氧濃度。 【實施方式】 本發明之說明具體實例敘述如下。為了清楚起見，並 非全部貫際實施的特徵均見述於本說明書中。當然應瞭解 在任何XI類貫際具體實例的開發中，必須做出許多特定實 施上的決定以達到開發者的特定目標，例如遵守與系統有 關和與商業有關的限制，這些限制會因實施方式而異。再 者，應瞭解雖然這類開發的努力可能既複雜又費時，不過 對於熟習此項技術者而言仍然可能是一項得以獲致本揭示 内容之效益的例行工作。 在下述中’參考第1圖更詳細敘述銅鍍覆和電拋光中 所涉及的化學。然而，除非在後附申請專利範圍中已明確 提出這類限制，否則不應將本發明視為限制在使用銅。 銅在空氣中氧化形成氧化銅已為吾人所熟知。在二氧 7 (修正本）92358 1286355 化碳（C〇2)的存在下，鋼合 - fr仆汰/cn、 T此θ形成所謂的綠色碳酸銅。在 4 ( 2)的存在下，該二氧化硫可能存在於空氣中， :可能會形成硫酸鹽。因此，根據方程式二 = 可能經過各種一 =CU )而為化合物之-部分。這些反應較佳係於氧和 水的存在下發生’而氧和水通常也存在於周圍空氣中。 式 1 〇2 + 2H2〇 + 4e、40H~ 式 la 2Cu 2Cu2+ + 4e~ 式 2 2H+ + 2e- H2 式i表示在所謂的氧腐姓中得到的化學反應。該方程 式表不空氣中存在或水中溶解的氧會導致氧化程序。式！ 中所需要的電子係消耗掉例如式la程序之電子， 成 Cu2+。 第1圖更清楚說明此種情形，其中係描緣所謂的銅電 位與PH值座標圖。該電位與阳值座標圖係將銅，其氧化 物CU2〇和CU〇及銅離子（Cu++)的電化學電位表示為pH值 的函數。該圖表示代表Cu、Cu2〇、Cu〇及Μ的四個個 別區域。這些區域係由表示相鄰區域化合物之平衡狀態的 線所分開。該平衡可沿著該圖中的線而存在於兩種化合物 之間’或是存在於分隔不同對化合物的線之交點四周的三 種化口物之間。式1的氧還原之氧化還原電位也示於第i 圖的電位與PH值座標圖中。在整個pH區域上，氧還原之 氧：還原電位係高於Cu2〇和Cu〇形成為保護層的銅平衡 之氧化還原電位。因此’在氧的存在下，根據 < 丄，取決 8 (修正本）92358 1286355 於PH值\銅會氧化形成氧化鋼（Cu0)或銅離子（Cu++)。 式2係說明另一個可能情形，該式之對應電化學電位 亦示於第1圖之電位與pH值座標圖中。的程序通常 稱為氫腐蝕’係由於將2H+還原為H2而發生。從電化學電 位已知銅比氫更具有惰性。這項事實係藉由第工圖之電位 與PH值座標圖中，式2的氧化還原函數所表示…沿著整 個pH區域2的氧化還原電位曲線係位於元素銅的區 域内部。 經證明銅的氧化程序較佳係於氧和水的存在下發生 3 4CuO + SO2 + 3H2O + 0.5〇2 — CuS04 · 3Cu(OH)2 ο 式 式3表示在二氧化硫^匕）、水和氧的存在下生成苛性 銅。苛性銅在水中具有良好的溶解度。因此，根據式3的 反應移除氧化銅（CuO)保護層可能會造成該銅層進一步的 侵蝕。以類似的方式，在濕氣、氧和二氧化碳（c〇2)的存在 下可能會產生銅的碳酸鹽。 因此在’乂及處理具有曝露銅區域之基板的製程階段 期間’使二氧化硫的量及/或氧的量及/或二氧化碳的量及/ 或濕氣的量減到最少在本發明中極為重要。特別是在電錄/ 電拋光基板中所涉及之製程會持續地產生促使銅表面氧化 的環境條件。 因此，本發明係以產生欲進行需要電化學處理之製程 耘序的基板所需的局部環境的概念為基礎，其中大量減少 二氧化硫及/或氧及/或二氧化碳的量，藉此使式3的平衡 向氧化銅（左侧）移動、並減少式！、1&和2的銅氧化。可利 (修正本）92358 9 1286355 用將實質上惰性的氣體（例如氮、氬等）供給至所考慮的處 /、或至少供給至處理工具的相關部分，形成圍繞欲處 理=基板的實質上惰性的氣氛來達成。藉由形成實質惰性 乳虱，與周圍大氣相比，二氧化硫及/或氧及/或二氧化碳 在整個基板表面上的分壓係顯著降低，並且降低暴露金屬 表面與這些反應性成分發生化學反應的機率。降低該分壓 亦可容許從製程液體（例如電解液，如超純水形態的水等） 私除這些環境氣體至某種程度，在儲存和搬運該製程液體 時’這些環境氣體可能已溶解在該製程液體中。 參考第2a和2b圖，在此敘述本發明之說明具體實例。 在第2a圖中’電化學方法處理基板之處理工具2〇〇之部分 包括鍍覆反應器210，該鍍覆反應器在本實例中可為包含 可旋轉基板夾具211和陽極213之電鍍反應器，該可旋轉 基板夾具211適用於容納及夾住基板212，該陽極具有其 中形成用以在處理基板212時導入電解液的入口 214。此 外’在陽極2 13和基板夾具211之間可配置擴散元件2 i 5。 在本具體實例中，電鍍反應器210代表所謂的噴泉式電鍍 反應器。然而，使用特殊類型的電鍍反應器並非本發明之 必要者，因此根據本發明可使用任何類型的鍍覆反應器， 包括配置用以進行電拋光（亦即反向電鍍程序）的裝置。可 配置鍍覆反應器210以定義出電鍍反應器210操作過程中 包含内部氧體氣氛的内體積216，在習知設備中該内部氣 體氣氛含有實質上對應於周圍大氣的氣體混合物。於一具 體實例中，與習知設備相反，電鍍反應器2 1 0包括配置將 10 (修正本）92358 1286355 惰性氣體（例如氮、氬或稀有氣體等）供給至内體積2〗6的 供氣系統21 7。供氣系統2〗7包括以其一端連接至惰性氣 體來源220及以另一端連接至内體積216之第一供應管線 218。此外，可提供第二供應管線219，其一端連接至内體 積216及其另一端連接至排放源（未圖示）。第一及第二供 應管線21 8、219雖然所圖示為連接至電鍍反應器21〇的上 端部及下端部，但亦可用任何適當的方式加以配置，取決 於處理工具200中用以將惰性氣體饋入内體積216所使用 的鍍覆反應器2 1 0類型。 在操作過程中，惰性氣體（例如氮氣）可由惰性氣體來 源220經由第一供應管線218供給至内體積216之中，在 電鍍反應器210内部形成實質惰性氣氛，藉此顯著減少二 氧化硫和氧的量。應注意本文中所使用的“實質惰性氣體氣 氛”係用以敘述其氧濃度與周圍大氣（通常是無塵室中的大 氣。)之氧濃度偏離至少20%的氣氛，因此其最大氧濃度約為 1 6〇/°，較佳為低於5°/❶，且更佳為低於1 %。隨後，可將基 板212载入電鍍反應器210中並可藉由基板夾具211容納 ，，二。根據處理工具200的類型，可使内體積216之内 P貫貝h性氣氛與周圍大氣接觸，以便進行某種程度量的 氣體交換。 於一具體貫例中，係由供氣系統2 1 7產生某種 程f量的超壓，藉此形成從内體積216向開口（未圖示）的 氣流，由於該氣流而將基板212載入基板夾具211中。依 此方式，使得從周圍大氣導入内體積216的氧和二氧化硫 (修正本）92358 11 1286355 減到最少。可將藉由形成連續氣流之某種程度量的超壓有 利地保持在操作時並未配置使内體積216隔絕周圍大氣而 ^分密封的電鑛反應器210巾。將基板212安置在基板央 /、211上之後’及或許在關閉用於基板傳送至基板夾具2 u 的開口之後，可操作供氣系統218， 線-使其吹洗内體積…進一步減少丄= f入電鍍反應器210期間可能已導入之氧和二氧化硫的 量。接著，開始運轉電鑛反應器21〇，其令與習知設備相 ^ ’該電鍍製程在實質惰性内部氣體氣氛中進行，因此顯 著減，在欲鑛覆於基板212上之銅表面處的腐㈣程。 第孔圖不意地表示具有連接至電鍍反應器210之附加 製程模組的處理工具2〇〇β在第2b圖中，處理工具2⑼還 包括電鍍反應器210下游的沖洗站23〇及沖洗站23〇下游 的錢站250。電鑛反應器21G、沖洗站23()及乾燥站㈣ 係藉由如箭頭261所示之配置以供基板輸送的複數個基板 輪送模組260所連接。處理工具2〇〇還包括定義出内體積 202的罩蓋2()1。於一具體實例中，係配置罩蓋加以實質 防止與關大氣的氣體交換，而在另—具體實例中，罩 蓋201的目的係顯著減少内體積2〇2與周圍大氣的氣體交 換。罩蓋201可包括在個別製程模組與站之間形成某種程 度分隔的複數個擋板203。 於一具體實例中，如第2 b圖所描繪者，供氣系統2 i 7 另外包括配置將惰性氣體供給到至少一部分之製程站 210、230、250及輸送模組26〇的複數個供應管線2〇4。於 (修正本）92358 12 1286355 另一具體實例中，尤其是當罩蓋201隔絕周圍大氣而實質 上完全密封内體積202時，可提供一或多個排放管線（未圖 示）以形成連續氣流。請注意第2b圖所描繪之具體實例僅 為說明用之態樣，在不脫離本發明之範疇的情況下，可進 行許多變化及修飾。例如，根據製程站210、230、250及 輸送模組260的配置，可用許多方式改變擋板203之裝置、 設計和排列。特別是，沖洗站230及乾燥站250係圖示為“開 放”系統，而在另一具體實例中，這些站可包含製程室，該 製程室可具有需要提供額外供應管線（例如供應管線2丨8、 2 1 9)的個別圍壁。此外，輸送模組26〇可包含任何類型的 晶圓搬運裝置，因此可設計擋板2〇3以便容許相鄰製程站 的裝载和卸載作業，同時減少相鄭站與模組之間的氣體交 換。在另一具體實例中，尤其是當沖洗站230及乾燥站25〇 分別包括具有圍壁的製程室時，可完全省略擋板2〇3。 在操作過程中，將具有在參考第2a圖所述之條件下電 鍍之鋼表面的基板212傳送至電鍍反應器21〇下游的製程 模組260。由於實質惰性氣體氣氛係藉由供應管線2〇4在 形成内體積202之中，因此實質上會防止先前已鍍覆銅的 潮濕敏感表面與氧及/或二氧化硫接觸。特別是，基板 典^包括完成鍍覆製程時的電解液薄膜，而内體積2〇2中 勺見貝丨月性氣體氣氛在輸送至沖洗站〇的過程中，可降 低新㈣之銅表面的腐钱機率。由於基板212係於實質惰 f生氣體氣氛中在沖洗站23()及乾燥站謂中處理，沖洗站 23〇及乾燥站250包括在這些製程站之間的輸送，所以在 (修正本）92358 13 ΐ2^6355 鍍覆後製程中也會使銅的腐餘減到最少。 應注意根據製程需求，處理工具2〇〇可包括更多的模 組，如第2b圖所示。例如，沖洗站23〇可代表處理含有精 牷金屬化層之基板所需要的任何清洗站。此外，其他具體 實例，尤其是涉及“濕式，，處理基板212的製程站，可包括 用以持續地減少對應局部氣氛之濕氣的排放管線，例如電 鍍反應器210的第二供應管線21 9。1286355 发明, invention description: [Technical Field of the Invention] The present invention relates to the field of integrated circuit fabrication, and more specifically, y y σ ' is related to depositing metal on a substrate and/or removing metal from a substrate. During the course of the process, the substrate is treated electrochemically. [Prior Art] The materials used in the multilayer interconnection technology of the integrated circuit (ic) are thin + conductors and thin film insulators. In order to manufacture a conductive film, cerium oxide (Si 〇 2) as an insulator has been widely used in combination with a sinter alloy. In order to further improve the performance of the device, in combination with the signal transmission delay and power consumption of 1C, copper which can be combined with low-k dielectric materials is now more and more commonly substituted for aluminum and germanium dioxide. In addition, the application of copper technology leads to the required metallization layer: a reduction in number. In the manufacture of multilayer interconnect systems, the plating and reverse plating processes of electroplated and electroless plating, also known as electropolishing processes, have become widely used metal deposition/removal techniques. In order to obtain the required quality of the metal layer, it is typically used in the electrochemical metal coating process. Among the many electrolytes used in the metal coating of the silk, the inorganic acid is the main component of the mineral coating solution. Various concentrations of sulfuric acid or citric acid are widely used. Regardless of the infiltration of sulfuric acid and acid acid, it is known that sulfuric acid and tannic acid are known to etch copper. When oxygen is easily obtained at the metal region formed on the semiconductor substrate, the surname rate is further increased as in the case of the conventional bell coating, due to the oxygen contained in the surrounding air. Due to the presence of oxygen, sulfur dioxide (which can be present in trace amounts in the surrounding environment) and water (package (Revised) 92358 5 1286355 3 in acid diluted with water), a significant degree of metal formation on the semiconductor substrate may occur. Oxidation and fading. This situation is even worse in the subsequent process of 'storage flushing and cleaning operations (all of which are carried out under humid conditions, under conditions that promote copper oxidation and fading). For the copper-containing substrate which performs a similar electroplating process (but the ion current is &), there is also a case of (4). Since copper is becoming more and more popular for semiconductor manufacturing, and as described above, since the exposed copper surface has a tendency to react with oxygen to form rot and tarnish, this corrosion and fading may tend to damage the resulting surface. Quality or adversely affects subsequent process steps. In view of the above-mentioned inner valley '纟+conductor substrate plating and electropolishing copper, it is clear that the reliability of the integrated circuit after completion is critical. Accordingly, a need exists for an apparatus and method for forming and processing a metal layer, particularly a copper layer, without unduly reducing surface quality. SUMMARY OF THE INVENTION The present invention is directed to a method and apparatus for reducing the amount of oxygen and sulfur dioxide that are in contact with an exposed metal surface, such as during and after electroplating and/or electropolishing a metal-containing substrate. The reduction in the partial pressure of oxygen and/or sulfur dioxide over the entire surface of the substrate to be treated or otherwise treated can reduce the chance of chemical reaction of the exposed metal surface with these reactive surrounding components. According to an embodiment of the present invention, a processing tool for electrochemically treating a substrate includes a plating reactor and a cover surrounding the plating reactor, the cover defining an atmosphere of gas atm〇sphere Within (corrected) 92358 6 1286355 volume. In this way, the hood is placed and placed in a shell to avoid gas exchange with the surrounding atmosphere. According to another embodiment of the present invention, a processing tool for electrochemically processing a substrate includes a plating reactor and a gas supply system configured to provide a flow of inert gas to the clock reaction And reducing at least one of an oxygen concentration and a oxidizing concentration in the keyed reactor. In accordance with another embodiment of the present invention, a method of electrochemically processing a substrate includes providing a processing tool configured to electrochemically process a substrate. Next, a gas atmosphere surrounding the substrate is formed, wherein the gas atmosphere has a lower oxygen concentration than the surrounding atmosphere surrounding the processing tool. [Embodiment] A specific example of the description of the present invention is as follows. For the sake of clarity, not all features that are implemented consistently are described in this specification. It should of course be understood that in the development of any specific instance of a XI class, many specific implementation decisions must be made to achieve the developer's specific goals, such as compliance with system-related and business-related restrictions, which may be due to implementation. Different. Furthermore, it should be understood that while such development efforts may be complex and time consuming, it may still be a routine exercise for those skilled in the art to achieve the benefits of this disclosure. The chemistry involved in copper plating and electropolishing is described in more detail below with reference to Fig. 1. However, the invention should not be construed as limiting the use of copper unless such limitations are expressly stated in the scope of the appended claims. The oxidation of copper to form copper oxide in the air is well known. In the presence of dioxane 7 (amendment) 92358 1286355 carbon (C〇2), the steel alloy - fr, cn, T θ forms the so-called green copper carbonate. In the presence of 4 ( 2), the sulfur dioxide may be present in the air: Sulfate may form. Therefore, according to equation 2 = possible through a variety of = CU ), it is a part of the compound. These reactions preferably occur in the presence of oxygen and water' and oxygen and water are also typically present in the surrounding air. Formula 1 〇2 + 2H2〇 + 4e, 40H~ Formula la 2Cu 2Cu2+ + 4e~ Formula 2 2H+ + 2e- H2 Formula i represents a chemical reaction obtained in the so-called oxygen rot. This equation indicates that oxygen present in the air or dissolved in water can cause an oxidation procedure. formula! The electrons required in the process consume electrons such as the program of the formula la into Cu2+. This is illustrated more clearly in Figure 1, where the so-called copper potential and PH coordinate plots are taken. The potential and positive coordinate plots represent the electrochemical potential of copper, its oxides CU2〇 and CU〇 and copper ions (Cu++) as a function of pH. The figure shows four individual regions representing Cu, Cu2〇, Cu〇 and Μ. These regions are separated by lines representing the equilibrium state of the compounds in adjacent regions. The equilibrium may exist between the two compounds along the line in the figure or between three of the reticulum that are present around the intersection of the lines separating the different pairs of compounds. The redox potential of the oxygen reduction of Formula 1 is also shown in the potential and pH coordinate plots of Figure i. Oxygen reduction in the entire pH region: the reduction potential is higher than the Cu2〇 and Cu〇 formation as the copper equilibrium redox potential of the protective layer. Therefore, in the presence of oxygen, according to < 丄, depending on 8 (amendment) 92358 1286355 at pH value / copper will oxidize to form oxidized steel (Cu0) or copper ions (Cu + +). Equation 2 illustrates another possible case where the corresponding electrochemical potential is also shown in the potential and pH coordinate plots of Figure 1. The procedure, commonly referred to as hydrogen etching, occurs as a result of reducing 2H+ to H2. Copper is known to be more inert than hydrogen from electrochemical sites. This fact is represented by the redox function of Equation 2 in the potential map of the artwork and the pH coordinate map... The redox potential curve along the entire pH region 2 is located inside the elemental copper region. It has been proved that the oxidation process of copper is preferably carried out in the presence of oxygen and water. 3 4CuO + SO2 + 3H2O + 0.5〇2 — CuS04 · 3Cu(OH)2 ο Formula 3 represents sulphur dioxide, water and oxygen The formation of caustic copper exists in the presence. Caustic copper has good solubility in water. Therefore, removal of the copper oxide (CuO) protective layer according to the reaction of Formula 3 may cause further erosion of the copper layer. In a similar manner, copper carbonate may be produced in the presence of moisture, oxygen and carbon dioxide (c〇2). Therefore, it is extremely important in the present invention to minimize the amount of sulfur dioxide and/or the amount of oxygen and/or the amount of carbon dioxide and/or the amount of moisture during the process of treating and treating the substrate having the exposed copper region. In particular, the processes involved in lithography/electropolished substrates continue to produce environmental conditions that promote oxidation of the copper surface. Accordingly, the present invention is based on the concept of creating a local environment required for a substrate to be subjected to a process sequence requiring electrochemical treatment, wherein the amount of sulfur dioxide and/or oxygen and/or carbon dioxide is substantially reduced, thereby making Equation 3 Balance moves to copper oxide (left side) and reduces it! , 1 & and 2 copper oxidation. Kelly (Revised) 92358 9 1286355 is to supply a substantially inert gas (such as nitrogen, argon, etc.) to the site under consideration / or at least to the relevant part of the processing tool to form a substantial surrounding the substrate to be processed = An inert atmosphere is reached. By forming a substantially inert nip, the partial pressure of sulfur dioxide and/or oxygen and/or carbon dioxide on the entire substrate surface is significantly reduced compared to the surrounding atmosphere, and the probability of chemical reaction of the exposed metal surface with these reactive components is reduced. . Reducing the partial pressure may also allow the environmental gases (such as electrolytes, such as water in the form of ultrapure water) to be privately removed to some extent, and the environmental gases may have dissolved during storage and handling of the process liquid. The process liquid. Referring to Figures 2a and 2b, specific examples of the description of the present invention are described herein. The portion of the processing tool 2 that electrochemically processes the substrate in Figure 2a includes a plating reactor 210, which in this example may be a plating reactor comprising a rotatable substrate holder 211 and an anode 213 The rotatable substrate holder 211 is adapted to receive and clamp the substrate 212 having an inlet 214 formed therein for introducing an electrolyte when the substrate 212 is processed. Further, a diffusion element 2 i 5 may be disposed between the anode 2 13 and the substrate holder 211. In this embodiment, electroplating reactor 210 represents a so-called fountain electroplating reactor. However, the use of a particular type of electroplating reactor is not essential to the invention, so any type of plating reactor can be used in accordance with the present invention, including devices configured for electropolishing (i.e., reverse plating procedures). Plating reactor 210 can be configured to define an internal volume 216 containing an internal oxygen atmosphere during operation of electroplating reactor 210, which in conventional apparatus contains a gas mixture substantially corresponding to the surrounding atmosphere. In one embodiment, in contrast to conventional equipment, the electroplating reactor 210 includes a supply of 10 (corrected) 92358 1286355 inert gas (eg, nitrogen, argon, or noble gas, etc.) to the internal volume 2 System 21 7. The gas supply system 2 includes a first supply line 218 connected to the inert gas source 220 at one end thereof and to the inner volume 216 at the other end. Additionally, a second supply line 219 can be provided, one end of which is coupled to the inner volume 216 and the other end of which is coupled to an exhaust source (not shown). The first and second supply lines 21, 219 are illustrated as being coupled to the upper and lower ends of the electroplating reactor 21A, but may be configured in any suitable manner depending on the inertness of the processing tool 200. The gas is fed into the inner volume 216 of the plating reactor type 210. During operation, an inert gas (e.g., nitrogen) may be supplied to the inner volume 216 from the inert gas source 220 via the first supply line 218 to form a substantially inert atmosphere within the electroplating reactor 210, thereby significantly reducing the amount of sulfur dioxide and oxygen. . It should be noted that the "substantially inert gas atmosphere" as used herein is used to describe an atmosphere whose oxygen concentration deviates from the oxygen concentration of the surrounding atmosphere (usually the atmosphere in a clean room) by at least 20%, and thus its maximum oxygen concentration is about It is 16 〇 / °, preferably less than 5 ° / ❶, and more preferably less than 1 %. Subsequently, the substrate 212 can be loaded into the plating reactor 210 and can be accommodated by the substrate holder 211, two. Depending on the type of processing tool 200, an atmosphere within the inner volume 216 can be brought into contact with the surrounding atmosphere for some degree of gas exchange. In a specific example, an overpressure of a certain amount f is generated by the gas supply system 217, thereby forming an air flow from the inner volume 216 to the opening (not shown), and the substrate 212 is carried by the air flow. It is inserted into the substrate holder 211. In this manner, oxygen and sulfur dioxide (Revised) 92358 11 1286355 introduced into the inner volume 216 from the surrounding atmosphere are minimized. An overpressure of a certain amount by the formation of a continuous gas stream can advantageously be maintained in the operation of the electro-mineral reactor 210 which is not sealed to isolate the inner volume 216 from the surrounding atmosphere. After the substrate 212 is placed on the substrate center /, 211 'and perhaps after closing the opening for substrate transfer to the substrate holder 2 u, the gas supply system 218 can be operated, the line - to purge the inner volume ... further reduce 丄 = The amount of oxygen and sulfur dioxide that may have been introduced during the electroplating reactor 210. Next, the operation of the electric ore reactor 21A is started, which is carried out in accordance with the conventional equipment. The electroplating process is carried out in a substantially inert internal gas atmosphere, thereby significantly reducing the rot at the copper surface to be coated on the substrate 212. (4) Cheng. The first hole diagram unintentionally indicates that the processing tool 2?? having an additional process module connected to the electroplating reactor 210 is in Fig. 2b. The processing tool 2(9) further includes a rinsing station 23 and a rinsing station 23 downstream of the electroplating reactor 210. 〇 Downstream money station 250. The electrowinning reactor 21G, the rinsing station 23 (), and the drying station (4) are connected by a plurality of substrate transfer modules 260 for substrate transport by the arrangement shown by arrow 261. The processing tool 2A also includes a cover 2()1 defining an inner volume 202. In one embodiment, the cover is configured to substantially prevent gas exchange with the atmosphere, while in another embodiment, the purpose of the cover 201 is to significantly reduce the exchange of gas within the internal volume 2〇2 with the surrounding atmosphere. The cover 201 can include a plurality of baffles 203 that form a degree of separation between the individual process modules and the station. In one embodiment, as depicted in FIG. 2b, the gas supply system 2i7 additionally includes a plurality of supply lines configured to supply inert gas to at least a portion of the process stations 210, 230, 250 and the transfer module 26A. 2〇4. In another embodiment, 92358 12 1286355, particularly when the cover 201 is insulated from the surrounding atmosphere to substantially completely seal the inner volume 202, one or more discharge lines (not shown) may be provided to form a continuous flow. . It is to be noted that the specific examples depicted in Figure 2b are for illustrative purposes only and many variations and modifications may be made without departing from the scope of the invention. For example, depending on the configuration of the process stations 210, 230, 250 and the transport module 260, the apparatus, design, and arrangement of the baffles 203 can be varied in a number of ways. In particular, the flushing station 230 and the drying station 250 are illustrated as "open" systems, while in another embodiment, the stations may include a process chamber that may have the need to provide additional supply lines (eg, supply lines 2丨) 8, 2 1 9) individual walls. In addition, the transport module 26A can include any type of wafer handling device, so the baffle 2 can be designed to allow loading and unloading operations of adjacent processing stations while reducing gas between the phase station and the module. exchange. In another embodiment, particularly when the flushing station 230 and the drying station 25A respectively include a process chamber having a surrounding wall, the baffle 2〇3 may be omitted entirely. During operation, the substrate 212 having the surface of the steel plated under the conditions described with reference to Figure 2a is transferred to a process module 260 downstream of the electroplating reactor 21. Since the substantially inert gas atmosphere is formed into the inner volume 202 by the supply line 2,4, the moisture sensitive surface of the previously plated copper is substantially prevented from coming into contact with oxygen and/or sulfur dioxide. In particular, the substrate pattern includes the electrolyte film at the time of completing the plating process, and the inner volume of 2 〇 2 of the spoon is seen in the process of transporting to the rinsing station , in the process of transporting to the rinsing station ,, which can reduce the surface of the new (four) copper. The rate of rotten money. Since the substrate 212 is processed in the substantially inert gas atmosphere in the flushing station 23 () and the drying station, the flushing station 23 and the drying station 250 include the transport between the processing stations, so (amendment) 92358 13 ΐ2^6355 The copper corrosion is also minimized during the post-plating process. It should be noted that depending on the process requirements, the processing tool 2 can include more modules, as shown in Figure 2b. For example, the rinsing station 23A can represent any cleaning station required to process a substrate containing a fine ruthenium metallization layer. Moreover, other specific examples, particularly those relating to "wet, processing of the substrate 212, may include a drain line to continuously reduce moisture corresponding to the local atmosphere, such as a second supply line 21 of the electroplating reactor 210. .
如第2b圖所示的模組結構，在不過度影響相鄰製程封 與模組之氣體氣氛的情況下，還可分別進出製程站及/或賴 送模組。例如處理工具200的模組配置利用如第一和最後 輪送模組260,在不過度損害剩餘内體積2〇2中之惰性氣 體氣氛的情況下，可容許將基板裝載至處理工具2〇〇或從 該處理工具將基板卸載。 第2c圖示意地表示本發明之另一說明實例，直中處理 工具200之供氣系、统217包括酉己置用以從該惰性_The module structure shown in Figure 2b can also enter and exit the process station and/or the transfer module separately without excessively affecting the gas atmosphere of the adjacent process seal and module. For example, the module configuration of the processing tool 200 utilizes, for example, the first and last transfer modules 260 to permit loading of the substrate to the processing tool 2 without undue damage to the inert gas atmosphere in the remaining inner volume 2〇2. Or unload the substrate from the processing tool. Fig. 2c is a schematic view showing another illustrative example of the present invention, in which the gas supply system 217 of the straight processing tool 200 is provided for use from the inertia.
除氧及/或二氧化硫的反應器221。反應器221可為任何^ 型的化學及/或物理反應器，該反應器包含例如可容許用此 項技術中已為吾人所熟知的方法移除氧及/或二氧化硫之 催化劑。由於主要量的惰性氣體可重新製造及再利：，因 此當處理工具200需要供應大量的惰性氨 曰主& "丨王虱體或是供應相當 吁貝的h性氣體（例如氬或其他稀有氣體）時， 係特別有利。當使用如第2c圖所示的供氣 /、_士、^ 佳係配置罩蓋201使洩漏至周圍 _二 7時，較 少。 乱妁h性氣體減到最 (修正本）92358 14 1286355 第2d圖示意地表示處理工具200的進一步變化。在第 2d圖中，處理工具200包括連接至控制單元270的複數個 感測元件27 1，該控制單元係依序有效連接至包含惰性氣 體來源220之供氣系統217。感測元件271可包括壓力感 測器、氧感測器、二氧化硫感測器等。可將感測元件27 j 提供給一或多個製程站210、230、250及輸送模組260。 可配置控制單元270以接收感測元件271的信號輸出及根 據所接收之感測信號進行程序控制。例如供氣系統2丨7可 包括適當裝置以調整通過供應管線2〇4或供應管線218和 21 9的流體流動。對應裝置在此項技術中已為吾人所熟 知，可包括閥件、泵、風扇等。 接著控制單元270可相應地調整一或多個此等流動調 整裝置，以控制管線2〇4、218、219中的流體流動，藉此 並控制内體積202内部的氣氛。例如，在第一輸送模組26〇 處’例如將基板載入個別製程站或將外部供應之基板載入 處理工具200時，暫時增加流入電鍍反應器21〇的流體， 可有利於有效減少擴散進入電鍍反應器2 1 0中的氧及/或 —氧化硫。同樣也可控制在其他製程站23 0、250及輸送模 、、、260中的貫質惰性氣體氣氛。此外，根據感測元件工 所提供的測量結果控制該實質惰性氣體氣氛，可將供給至 工具200之惰性氣體的量減少至實際上所需要的量， 因而節省資源。 因此，本發明有效提供能降低在電化學方法處理基板 ^如電鑛、電搬光等）所涉及之製程中銅腐飯的機率，其 (修正本）92358 15 1286355 中藉由連續氣流及/或提供罩莫 从^ μ ^ 仏成圍繞該基板的實質惰 性氣體氣氛，該罩蓋係定義出 *〕貫貝〜 體積，該實質惰性氣體氣氛在誃卢挪 ^ 爷卢搜丁目 〇x ^ 工具的内部或至少在 該處理工具之一部分的内部。鱼 的其他製程，例如基板之穿冑7予方法處理基板相關 也最好在貫質惰性氣氛内部 子 ^ Φ. θ ^ 返仃應〉主意可在個別處理工 具申或疋在配置用以實施兩個A reactor 221 for removing oxygen and/or sulfur dioxide. Reactor 221 can be any type of chemical and/or physical reactor comprising, for example, a catalyst that permits the removal of oxygen and/or sulfur dioxide by methods well known in the art. Since a major amount of inert gas can be remanufactured and re-benefited, therefore, when the processing tool 200 is required to supply a large amount of inert ammonia, the main &" 丨 虱 或是 or supply a comparable gas (such as argon or other rare gases) When it is), it is particularly advantageous. When the air supply/, _ _, _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The chaotic gas is reduced to the maximum (Revised) 92358 14 1286355 Fig. 2d schematically shows further changes of the processing tool 200. In Fig. 2d, the processing tool 200 includes a plurality of sensing elements 271 coupled to a control unit 270 that are operatively coupled to a gas supply system 217 comprising an inert gas source 220. Sensing element 271 can include a pressure sensor, an oxygen sensor, a sulfur dioxide sensor, and the like. Sensing element 27j can be provided to one or more process stations 210, 230, 250 and delivery module 260. The configurable control unit 270 receives the signal output of the sensing element 271 and performs program control based on the received sensing signal. For example, the gas supply system 2丨7 may include suitable means to regulate fluid flow through the supply line 2〇4 or supply lines 218 and 219. Corresponding devices are well known in the art and may include valve members, pumps, fans, and the like. Control unit 270 can then adjust one or more of these flow conditioning devices accordingly to control fluid flow in lines 2〇4, 218, 219, thereby controlling the atmosphere within inner volume 202. For example, when loading the substrate into the individual process station or loading the externally supplied substrate into the processing tool 200 at the first transport module 26, temporarily increasing the fluid flowing into the plating reactor 21 can help to effectively reduce the diffusion. Oxygen and/or sulfur oxide in the electroplating reactor 210. It is also possible to control the gaseous inert gas atmosphere in the other process stations 23 0, 250 and the transfer molds, 260. Furthermore, by controlling the substantially inert gas atmosphere based on the measurement results provided by the sensing element, the amount of inert gas supplied to the tool 200 can be reduced to the amount actually required, thereby saving resources. Therefore, the present invention effectively provides the possibility of reducing the copper rot in the process involved in electrochemically processing substrates such as electro-mine, electro-optical, etc., which is corrected by continuous gas flow and/or in 92358 15 1286355. Or providing a mask from a ^ μ ^ 实质 into a substantially inert gas atmosphere around the substrate, the cover is defined as * 贯 〜 ~ ~ volume, the substantial inert gas atmosphere in the 誃 Lu Nuo ^ 爷 搜 搜 〇 ^ x ^ tool Internal or at least inside part of one of the processing tools. Other processes of the fish, such as the substrate through the 胄7 method to process the substrate are also preferably in the internal inert atmosphere Φ. θ ^ 仃 仃 〉 〉 〉 〉 〉 〉 〉 〉 〉 〉 One
整以更多個製程，或甚至是完 2:1矛王％序的處理工具中决# A 仃這些製程，本發明係涵芸 任何類型的處理工具。 ’、^ 應注意雖然參考銅鍍覆爽4 H 又復笊敘述本發明，但本發明之原 理也可輕易地應用在電化學方 甘+一α s有銅以外之金屬的 "〃 I貝惰性氣氛係有利於提升製程品質。 ^述之特定具體實例僅作為說明之用，如同熟習此項 技術者所顯而易見，本發明 、 用不同但卻等效的方式加以 修飾及貫施，而得到本文中 π〗不文中所教不之效益。例如上 步驟可用不同順序加以垂# ll 衣狂 m斤加％& °此外’除了下列申請專利範 圍所述者以外，並；^咅胃^ ^ 不W圖限制本文中所示之架構或設計的 細節。因此顯而易貝以μ - ▲、 上所揭不之特定具體實例可加以改 變=修飾’且此等變化全部均視為在本發明之㈣與精神 的fe圍内故本文所尋求之保護範圍係如下列巾請 圍所提出者。 #Ei 【圖式簡單說明】 多考下歹j A明並結合附圖可瞭解本發明，附圖中 的參照數字等同於相同的元件，其中： (修正本）92358 16 1286355 第1圖表示銅的電位與1?11值座標圖（p〇urbaix diagram)； 第2a圖表不根據本發明之一說明具體實例之電化學 方法處理基板之處理工具之示意圖的簡化部分； 第2b圖示意地表示第2a圖之處理工具的圖，該處理 工具包括電化學方法處理基板中所涉及的其他製程站； 第2c圖表示根據本發明之具有再循環惰性氣體之處 理工具的不意圖；及 第μ圖表示包括第2a圖之處理工具的系統之示意 圖，該系統係容許根據本發明之另一說明具體實例的改進 僵吕本發明可容許各種㈣及替代形式，但已利用 ^中的實例表示及本文詳細說明本發明之料具體實例 二而應瞭解本文中特定具體實例之說明並不意 發明限制在已揭示的特定形式上，但是相反地，並目： 在Γ函蓋落人如後附巾請專利範圍所界定之本發明之精 與料之範圍内的所有修飾、等效及替代方案。胃 【主要元件符號說明】 200 處理工具 202 内體積 204 供應管線 211 基板夾具 213 陽極 215 擴散元件 201 罩蓋 203 擋板 210 鍍覆反應器 212 基板 214 入口 216 内體積 (修正本）92358 17 1286355 217 供 氣 系 統 218 第 一 供 應 管 線 219 第 二 供 應管線 220 惰 性 氣 體 來 源 230 沖 洗 站 250 乾 燥 站 260 送 模 組 261 箭 頭 270 控 制 單 元 271 感 測 元 件 18 (修正本）92358The whole process is more than one process, or even the end of the processing tool of the 2:1 Spear King %. # A 仃 These processes, the present invention covers any type of processing tool. ', ^ It should be noted that although the invention is described with reference to copper plating and 4 H, the principle of the present invention can also be easily applied to the metal of the metal of the metal, such as copper, which has a metal other than copper. An inert atmosphere is beneficial to improve process quality. The specific examples described are for illustrative purposes only, and as will be apparent to those skilled in the art, the present invention is modified and applied in a different but equivalent manner, and is not taught in the text herein. benefit. For example, the above steps can be carried out in different orders. ll 衣 m m m & & & ° ° 此外 此外 此外 此外 ° ° ° ° ° ° ° ° ° ° 此外 此外 ; ; ; ; 咅 咅 咅 咅 咅 咅 咅 咅 咅 咅 咅 咅 咅 咅The details. Therefore, it is obvious that the specific examples that can be modified by μ- ▲, can be changed = modified 'and all of these changes are regarded as the scope of protection sought in this article (4) and the spirit of the present invention. For the following items, please ask the person who proposed it. #Ei [Simple description of the drawings] The present invention will be understood by reference to the drawings, and the reference numerals in the drawings are equivalent to the same elements, wherein: (amendment) 92358 16 1286355 Figure 1 shows copper a potential and a 1?11 value plot (p〇urbaix diagram); Figure 2a is a simplified portion of a schematic diagram of a processing tool for processing a substrate by an electrochemical method according to a specific example of the invention; Figure 2b is a schematic representation of the 2a diagram of a processing tool comprising an electrochemical method for processing other processing stations involved in the substrate; 2c is a schematic representation of a processing tool having a recirculating inert gas according to the present invention; and FIG. A schematic diagram of a system including a processing tool of FIG. 2a, which allows for an improvement of the exemplary embodiment according to another embodiment of the present invention. The present invention may tolerate various (four) and alternative forms, but has been represented by examples in the text and detailed herein. The description of the specific examples of the present invention is to be understood as being limited to the specific forms disclosed, but not to the contrary. And Head: In Γ covers all modifications, equivalents, and alternatives falling within the scope of the essence with the material of the present invention fall as the appended TOWELSPLEASE patentable scope within the meaning of the. Stomach [Major component symbol description] 200 Processing tool 202 Internal volume 204 Supply line 211 Substrate jig 213 Anode 215 Diffusion element 201 Cover 203 Baffle 210 Plating reactor 212 Substrate 214 Inlet 216 Internal volume (Revised) 92358 17 1286355 217 Gas supply system 218 first supply line 219 second supply line 220 inert gas source 230 flushing station 250 drying station 260 send module 261 arrow 270 control unit 271 sensing element 18 (amendment) 92358