200401362 玖 、發明說明： [發明所屬之技術領域】 本發明係有關積體電路製造之領 ，一 關在基板上沉積金屬或從基板移除金 …有 、 霉之各種製造步,, 過程中，以電化學方法處理基板者。 ά勺 【先前技術】 積體電路（1C)之多層互連技術中所 、，- 使用的材料為薄腊 導體及薄膜絕緣體。為了製造導電薄 ^ .A ，、，已廣泛地以銘沬n 銘5金結合作為絕緣體之二氧切（Si02)—起使用。 步提升裝置性能’就1(:的信號傳輸延遲及功率 言，可結合低k介電材料的銅現在越來越普遍取代銘和— 氧化石夕。此外，銅技術之應用會導致所需要的金屬化層： 數減少。在製造多層互連系統方面，電鍍和無電鍍覆形式 之鍍覆及反向製程，亦稱為電拋光製程， 工 G成為廣泛使用 的金屬沉積/移除技術。 為了獲得金屬層所要求的品f，典型係於電化學金屬 鍍覆製程中使用各種化學品。在基板上鍍覆金屬所使用: 許多電解液之中，無機酸係作為鍍覆溶液之主要成分。沪 酸或墙酸係以各種濃度廣泛地使用。不論所供應的硫酸和 罐酸的濃度’已知硫酸和墙醆會姓刻銅。卷t Λ ' ®牛導體基板上 所形成之金屬區域處可輕易地得到氧時，會進—步提言養虫 刻速率’如同在習知鐘覆製程中由於周圍空氣含有的氧所 導致的情形一樣。 由於氧、二氧化疏（可微量存在於環境中）及水（包含在 92358 5 200401362 以水稀釋的酸中）的存在，可能會 人 x生在半$月且基板上所形 成之i屬顯著程度的氧化及褪色。^ 廷種情況在後續輸送、 储存、沖洗和清洗動作（其所有動 π助作都在潮濕條件下，換士 之在促使銅氧化及4遐色的條件下進行）的㈤呈中，甚至合: 惡化。而對於進行相當類似電錢 " 长' 〕电拋先製程（但其中的離 子流為反向者）之含銅基板也有相同的情形。 由於銅越來越普遍用於半導體製造”而且如上所述， 由於曝露的銅表面具有容易和氧反應形成舰及褪色的傾 向，因此這種腐餘及褪色並且可能會傾向於損害所得到表 面的品質或是對於後續製程步驟有不利的影響。有鑑於上 述内容，在半導體基板上鑛覆及電抛光銅顯然是完成 的積體電路之可靠度的關鍵。 ,因此，存在著對於在不過度降低表面品質的情況下， 形成和處理金屬層（特別是銅層）之裝置與方法的需求。 【發明内容】 本發明係針對減少與鍍覆及/或電拋光含金屬基板之 剛、之中和之後的暴露金屬表面接觸之氧及二氧化硫的量 之方法與裝置。藉由顯著降低在欲處理或欲以其他方法處 理之基板的整個表面上之氧及/或二氣化硫的分壓，可降低 暴露金屬表面與這些反應性周圍成分發生化學反應的機 率 0 根據本發明之一具體實例，電化學方法處理基板之處 理工具包括一鍍覆反應器及一包圍該鍍覆反應器之罩蓋， 该罩蓋係定義出含有内部氣氛之内體積。藉此，係配置該 92358 6 200401362 罩蓋以實質上避免與周圍大氣的氣體交換。 根據本發明之另一具體實例，電化學方法處理基板之 處理工具包括一鐘覆反應器及一供氣系统，該供氣系統係 =置將惰性氣流供給至該鐘覆反應器，以減少該鍍覆反應 為中氧濃度及二氧化硫濃度之至少其中之—。 根據本發明之另一具體實例，電化學方法處理基板之 方法包括提供配置用以電化學方法處理基板之處理工且。 其次，形成圍繞該基板之氣氛，*中該氣氛比圍繞該處理 工具的周圍大氣具有較低的氧濃度。 【實施方式] 本發明之説明具體實例 非全部實際實施的特徵均見 在任何這類實際具體實例的 施上的決定以達到開發者的 關和與商業有關的限制，這 者，應瞭解雖然這類開發的 對於熟習此項技術者而言仍 内谷之效鼓的例行工作。 敛遠如下。為了清楚起見，並 述方：本說明書中。當然應瞭解 開發中’必須做出許多特定實 特定目標’例如遵守與系統有 些限制會因實施方式而異。再 努力可能既複雜又費時，不過 然可能是一項得以獲致本揭示 m B更砰、，.田敘述鋼鍍覆和電拋 所涉及的化學。然而，除非在後 提出這類限制，否則…η 申h專利範圍中已 财二應將本發明視為限制在使用銅 銅在工乳中氧化形成氧化銅 仆垆（ΓΠ、沾丄+ 匕為〇人所熟知。在 化峡(C〇2)的仔在τ ’銅 ™)的存在η二氧化二：:: 二氮化踮㈧η、从七」- &尸斤％ #綠色碳酸銅 空 氣 92358 7 200401362 會形成硫酸鹽。因此，根據方程式la得到的關係， 銅層最有可能經過各種氧化過程而產生銅離子 或C U )而為化人 邱八 一 7jc^ ^ σ物之一 刀0延些反應較佳係於氧和 水的存在下發生， 孔才 式 式1; 式2 虱和水通㊉也存在於周圍空氣中。 °2 + 2H20 + 4. 2Cu 2Cu2+ + 4e' 2H+ + 2e'^ H2200401362 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to the manufacturing of integrated circuits. It involves the deposition of metal on a substrate or the removal of gold from the substrate ... There are various manufacturing steps of mold. Those who handle substrates electrochemically. 제 勺 [Previous technology] In the multilayer interconnection technology of integrated circuit (1C), the materials used are thin wax conductors and thin film insulators. In order to manufacture the conductive thin ^ .A ,, the two oxygen cuts (Si02) have been widely used as the insulator. Improve the performance of the device step by step (in terms of signal transmission delay and power). Copper, which can be combined with low-k dielectric materials, is now more and more popular to replace Minghe-Stone Oxide. In addition, the application of copper technology will lead to the required Metallization: The number is reduced. In the manufacture of multilayer interconnection systems, electroplating and electroless plating and reverse processes, also known as electropolishing processes, have become a widely used metal deposition / removal technology. The product f required to obtain the metal layer is typically used in the electrochemical metal plating process. Various chemicals are used in the plating of the substrate: Among many electrolytes, the inorganic acid is the main component of the plating solution. Hu acid or wall acid is widely used in various concentrations. Regardless of the concentration of sulfuric acid and pot acid supplied, 'known sulfuric acid and wall noodles will be engraved with copper. Volume t Λ' ® at the metal area formed on the conductor substrate When oxygen can be easily obtained, it will be further mentioned that the insect engraving rate is the same as that caused by the oxygen contained in the surrounding air during the conventional bell-covering process. In the environment) and the presence of water (contained in 92358 5 200401362 diluted acid with water) may cause humans to be born half a month and the formation of i on the substrate is a significant degree of oxidation and discoloration. ^ The situation During the subsequent conveying, storage, rinsing, and cleaning actions (all of its motions are performed under humid conditions, in other words, under conditions that promote copper oxidation and 4 colors), or even: worsen. And The same is true for copper-containing substrates that perform quite similar electric power " long '] electropolishing first processes (where the ion current is the reverse). As copper is more and more commonly used in semiconductor manufacturing "and as described above Because the exposed copper surface has a tendency to react with oxygen to form a ship and discolor, this corrosion and discoloration may tend to damage the quality of the obtained surface or have an adverse effect on subsequent process steps. In view of the above As a matter of fact, mineral coating and electropolishing of copper on a semiconductor substrate is obviously the key to the reliability of the completed integrated circuit. Therefore, there are situations in which the surface quality is not excessively reduced. The need for an apparatus and method for forming and processing metal layers (especially copper layers). [Summary of the Invention] The present invention is directed to reducing and plating and / or electropolishing a metal-containing substrate immediately after, during, and after exposure to a metal surface. Method and device for contacting the amount of oxygen and sulfur dioxide. By significantly reducing the partial pressure of oxygen and / or sulfur dioxide on the entire surface of the substrate to be treated or otherwise treated, the exposed metal surface and the Probability of chemical reaction of these reactive peripheral components 0 According to a specific example of the present invention, a processing tool for electrochemically processing a substrate includes a plating reactor and a cover surrounding the plating reactor. The cover is defined The inner volume containing the internal atmosphere is provided. By this, the 92358 6 200401362 cover is configured to substantially avoid gas exchange with the surrounding atmosphere. According to another embodiment of the present invention, a processing tool for processing a substrate by an electrochemical method includes a bell-covered reactor and a gas supply system. The gas-supply system is configured to supply an inert gas flow to the bell-covered reactor to reduce the bell-covered reactor. The plating reaction is at least one of the middle oxygen concentration and the sulfur dioxide concentration. According to another embodiment of the present invention, a method for processing a substrate by an electrochemical method includes providing a place for processing a substrate by an electrochemical method. Second, an atmosphere surrounding the substrate is formed, where the atmosphere has a lower oxygen concentration than the surrounding atmosphere surrounding the processing tool. [Embodiments] Not all of the actual implementation features of the illustrated specific examples of the present invention can be found in the decision to implement any such actual specific examples to achieve developer's concerns and business-related restrictions. It should be understood that although this The kind of routine development for those who are familiar with this technology is still effective. Convergence is as follows. For the sake of clarity, it is stated in this manual. Of course, it is important to understand that there must be many specific and specific goals in development, such as compliance with some restrictions on the system, which will vary depending on the implementation. Efforts may be complicated and time-consuming, but it may be a way to get the present disclosure m B more bang. Tian describes the chemistry involved in steel plating and electropolishing. However, unless such a limitation is proposed later, the following shall be considered in the patent application. The invention should be considered to be limited to the use of copper copper to oxidize in the working milk to form copper oxide. 〇It's well known. The presence of zi zi in Huaxia (C〇2) in τ'copper ™) η Dioxide ::: Dithionium Dioxide η, from seven "-& deadweight% #green copper carbonate air 92358 7 200401362 Sulfate formation. Therefore, according to the relationship obtained by the equation la, the copper layer is most likely to undergo copper oxidation or CU through various oxidation processes.) It is one of the most influential materials, Qiu Bayi 7jc ^^ σ, and some reactions are better tied to oxygen and water. Occurs in the presence of genitalia, genius type 1; type 2 lice and water pimple also exist in the surrounding air. ° 2 + 2H20 + 4. 2Cu 2Cu2 + + 4e '2H + + 2e' ^ H2
4 〇 H :、4不在所谓的氧腐蝕中得到的化學反應。該方程 氣中存在或水中料的氧會導致氧絲序。式！ 中所萬要的電子係消耗 成CU2+。 式1 a耘序之電子，而銅則變 位與1V圖更清楚說明此種情形，其中係福繪所謂的銅電 物：值座桂圖。該電位與pH值座標圖係將銅，其氧化 物c~0和Cu0及銅離 ， ,,T (Cu )的電化學電位表示為ΡΗ：值 的函數。該圖表示荇# r P ® 別F w 戈表^、Cu2〇、Cu〇及cf+的四個個 別Ihe域。這些區域 表不相邮區域化合物之平衡狀態的 、_斤i開。該平衡可沿著兮 者°亥圖中的線而存在於兩種化合物 <間’或是存在於公F Τ η 磁 印不同對化合物的線之交點四周的三 種化合物之間。式I — Ρ，的乳遇原之氧化還原電位也示於第1 圖的電位與ΡΗ值座栌圖出 氧… ^ 。在整個pH區域上，氧還原之 還原電位係高於Cll 〇 ·ί Θ Λ 2〇和Cu〇形成為保護層的銅平衡 原電位°因此’在氧的存在下，根據式1，取決 、P值，銅會氧化形成氧化銅（Cu〇)或銅離子（Cu+ + )。 ^ τ兒月另個可能情形，該式之對應電化學電位 92358 200401362 亦示於第1圖之電位與pH值座栌岡由-+* Ο ΛΛ < 1 从知圖中。式2的程序通常 稱為氫腐姓，係由於將2H+還®盔Ττ 々、 灯η遇原為η2而發生。從電化學電 位已知銅比氫更具有惰性。這項畜 <只爭貝係错由弟1圖之電位 與pH值座標圖中，式2的壹外、菩π 八的乳化遇原函數所表示。沿著整 個pH區域’式2的氧 >(卜遺；§雨/ ”电位曲線係位於元素銅的區 域内部。 經證明銅的氧化程序較佳# 斤权1土知於氧和水的存在下發生。 式 3 4CuO + S02 + 3H)〇 + 〇 5Γ» 2 υ·5〇2 - CuS04 * 3Cu(〇H)9 式3表示在二氧化硫（8 2彡水和乳的存在下生成苛性 銅。苛性銅在水中呈有自 …… 谷解度。因此，根據式3的 反應移除氧化銅（Cu〇)保護声 、 s σ造成該銅層進一步的 侵蝕。以類似的方式，在濕 片 nr -q* -t ^ , ’、羊和一氧化碳（C02)的存在 下可％會產生銅的碳酸鹽。 因此’在涉及處理罝.嗔+力 期門,, ，、有曝路鋼區域之基板的製程階段 d間 使—氧化疏的量乃 ,τ ^ θ 〇里及/或乳的量及/或二氧化碳的量及/ 或濕乳的置減到最少在本 又月中極為重要。料別导太 電拋光基板中所：牛另々制 时⑺疋在$鍍/ 板中所，步及之製程會持 的環境條件。 L厓1從使銅表面乳化 因此，本發明得以# ‘ 程序的美# # + ' 生钬進行需要電化學處理之製程 -^ ^ "^概心為基礎’其中大詈诘+ —氧化硫及/或氧及/或— 一 T大里減少 向#虱化碳的量，藉此使式3的平| 向虱化銅（左側）移動並減 ]十衡 用將實賢上難的氣體(例μ V二2的銅氧化°可利 理工具或至少供、给至處理卫且^)供給至所考慮的處 工具的相關部分，形成圍繞欲處 92358 200401362 理之基板的實質上惰性的氣 今& m 、力乂知由形成貫質惰柯 乳汛，與周圍大氣相比， 生 —# 乳化^及/或乳及/或二氧化e 在整個基板表面上的分庳脊 戈 … 刀“頒者降低，並且降低暴露金雇 表面與這些反應性成分骖 ^ 生化學反應的機率。降低 亦可容許從製程液體（例如泰萨、六; 域 1例如电角午液，如超純水形態的水等 移除這些環境氣體至某種 $) 士 枉度在储存和搬運該製程液㈣ 這些環境氣體可能已溶解在該製程液體中。 ^ 參考第2# 2b圖’在此敛述本發明之說明具體實例 在第2a圖中’電化學方法處理基板之處理工具2〇〇之部二 包括鍍覆反應器210，該鍍覆反應器在本實例中可： 可旋轉基板炎具m和陽極213之電岐應器，該可 基板炎具21 1適用於容納及夾住基板212，該陽極且有其 中形成用以在處理基板2 i 2時導入電解液的入口 2】4，此 外，在陽極213和基板爽具211之間可配置擴散元件215。 在本具體實例巾，電鍍反應器21G代表所謂的喷表式電鐘 反應器。’然而，使用特殊類型的電鍍反應器並非本發明: 必要者，因此根據本發明可使用任何類型的鍍覆反應器， 包括配置用以進行電拋光（亦即反向電鍍程序）的裝置。可 配置鍍覆反應益2 1 〇以定義出電鍍反應器2丨〇操作過程中 包含惰性氣氛的内體積216，在習知設備中該惰性氣氛含 有貫質上對應於周圍大氣的氣體混合物。於一具體實例 中，與習知設備相反’電鍍反應器2]〇包括配置將惰性氣 肢（例如氛氬或稀有氣體等）供給至内體積2】6的供氣系 统217。供氣系統2] 7包括以其一端連接至惰性氣體來源 92358 10 200401362 22〇及以另—端連接至内體積216之第〆供應管線218。此 外可^供第一供應管線2 1 9，其一端連接至内體積2 1 6 及其另一端連接至排放源（未圖示）。第一及第二供應管線 218、219雖然所圖示為連接至電鍍反應器21〇的上端部及 下端部，但亦可用任何適當的方式加以配置，取決於處理 工具2 0 0中用以將惰性氣體饋入内體積2丨6所使用的鍍覆 反應器2 1 0類型。 在操作過程中 源220經由第—供 電鍍反應器210内 氧化硫和氧的量。 係用以敘述其氧濃 之氧濃度偏離至少 1 6 % ’較佳為低於 板212載入電鍍反 該基板。根據處理 部實質惰性氣氛與 氣體交換。 ’惰性氣體（例如氮氣）可由惰性氣體來 應管線2〗8供給至内體積2 1 6之中，在 部形成實質惰性氣氛，藉此顯著減少二 應注意本文中所使用的“實質惰性氣氛„ 度與周圍大氣（通常是無塵室中的大氣） 20%的氣氛，因此其最大氧濃度約為 5 /〇 .且更佳為低於1 %。隨後，可將基 應杰210中並可藉由基板夾具211容納 工具200的類型，可使内體積2 ] 6之内 周圍大氣接觸，以便進行某種程度量的 因此，於一具體實例中 程度！的超壓，藉此形成從 氣流，由於該氣流而將基板 此方式，使得從周圍大氣導 減到最少。可將藉由形成連 利地保持在操作時並未配置 ’係由供氣系統2 1 7產生某種 内體積2 ] 6向開口（未圖示）的 -12載入基板夹具21丨中。依 入内體積2 1 6的氧和二氧化疏 續氣流之某種程度量的超壓有 使内體積2 ] 6隔絕周圍大氣而 92358 2004013624 0 H :, 4 Chemical reactions not obtained in so-called oxygen corrosion. The equation The presence of oxygen in the gas or in the water causes the oxygen filament order. formula! The most important electronics system consumes CU2 +. Equation 1a shows the sequence of electrons, and the displacement of copper and the 1V diagram more clearly illustrate this situation. Among them, the so-called copper electronics: value diagram. This potential and pH coordinate plot shows the electrochemical potential of copper, its oxides c ~ 0 and Cu0, and copper ionization, ,, and T (Cu) as a function of Pj: value. The figure shows the four individual Ihe domains of 荇 # r P F 表, Cu 2 0, Cu 0 and cf +. These areas represent the equilibrium state of the compounds in the mailing area. This equilibrium may exist between two compounds < between the two compounds < < ' > or between the three compounds around the intersection of the lines of different pairs of compounds of the male F T η magnetic print along the line in the chart. The oxidation-reduction potential of formula I — P, is also shown in Figure 1. The potential and PΗ value plots show oxygen ... ^. Over the entire pH range, the reduction potential of oxygen reduction is higher than the original potential of copper equilibrium formed by Cll 〇 · ί Θ Λ 2〇 and Cu〇 as a protective layer. Therefore, in the presence of oxygen, according to Formula 1, it depends on P As a result, copper can be oxidized to form copper oxide (Cu0) or copper ions (Cu ++). ^ τ Eryue Another possible situation, the corresponding electrochemical potential of this formula 92358 200401362 is also shown in Figure 1 the potential and the pH value of the 栌 由 by-+ * Ο ΛΛ < 1 From the figure. The procedure of formula 2 is usually called the hydrogen rot surname, which occurs because 2H + is returned to the helmet Tτ 々 and the lamp η meets the original η2. It is known from electrochemical potentials that copper is more inert than hydrogen. This animal's fault is represented by the potential and pH coordinate plots in Figure 1 and the original function of Eq. 2 and E.P. Along the entire pH region, the oxygen of formula 2> (description; § rain / "potential curve is located inside the region of elemental copper. It has been proven that the oxidation process of copper is better. The following occurs: Formula 3 4CuO + S02 + 3H) 〇 + 〇5Γ »2 υ · 5〇2-CuS04 * 3Cu (〇H) 9 Formula 3 shows that caustic copper is generated in the presence of sulfur dioxide (82 2 water and milk). Caustic copper has a self-valley resolution in water. Therefore, the copper oxide (Cu0) protection sound is removed according to the reaction of Equation 3, and s σ causes further erosion of the copper layer. In a similar manner, the wet sheet nr -q * -t ^, 'can produce copper carbonate in the presence of sheep and carbon monoxide (C02)%. Therefore,' involving the processing of 罝. 嗔 + 力 门 门 ,,,, and the substrate with exposed steel area In the process stage d, the amount of oxidative thinning is to reduce τ ^ θ mile and / or the amount of milk and / or the amount of carbon dioxide and / or the amount of wet milk to a minimum is extremely important in this month. Guideline for polishing substrates: Niu is also manufactured in the plating / plates, and the environmental conditions that will be maintained during the manufacturing process. L Ya 1 from the copper surface As a result, the present invention allows # '程序 的 美 # # +' to produce a process that requires electrochemical treatment-^ ^ " ^ Conscientiously based 'where 詈 诘 +-sulfur oxide and / or oxygen and / or — One T Dali reduces the amount of carbon towards #lice, thereby making the flat of formula 3 | Move to copper (left) and reduce it] Shiheng uses gas that is difficult to use (eg copper of μ V 2.2) Oxidation can be performed on the tool or at least to the relevant part of the processing tool under consideration, forming a substantially inert gas around the substrate to be processed 92358 200401362. Knowing that the formation of a mass of inert laxative milk, compared with the surrounding atmosphere, raw — # emulsifying ^ and / or milk and / or dioxide e on the entire substrate surface ridge ridges ... The probability of exposure of the surface to chemical reactions with these reactive ingredients. Reduction can also allow removal of these from process liquids (such as Tessa, VI; domain 1 such as electric angle liquid, such as water in the form of ultrapure water). Ambient gas to a certain level) These ambient gases can be used to store and handle the process fluid. It can be dissolved in the process liquid. ^ Refer to Figure 2 # 2b 'to illustrate the specific examples of the present invention. In Figure 2a', the second part of the processing tool 2000 for electrochemical processing of substrates includes plating. Reactor 210, the plating reactor in this example can be: an electric reactor that can rotate the substrate inflammation tool m and the anode 213, the substrate inflammation tool 21 1 is suitable for receiving and clamping the substrate 212, and the anode has An inlet 2] 4 is formed therein for introducing the electrolyte when the substrates 2 i 2 are processed. In addition, a diffusion element 215 may be disposed between the anode 213 and the substrate holder 211. In this embodiment, the plating reactor 21G represents a so-called spray-type clock reactor. 'However, the use of a special type of plating reactor is not the present invention: if necessary, any type of plating reactor can be used in accordance with the present invention, including a device configured to perform an electropolishing (ie, reverse plating process). The plating reaction 2101 can be configured to define an inner volume 216 containing an inert atmosphere during the operation of the plating reactor 2. In the conventional equipment, the inert atmosphere contains a gaseous mixture that corresponds in quality to the surrounding atmosphere. In a specific example, the electroplating reactor 2] o, as opposed to conventional equipment, includes a gas supply system 217 configured to supply an inert gas limb (such as atmospheric argon or a rare gas, etc.) to the inner volume 2] 6. The gas supply system 2] 7 includes a third supply line 218 connected at one end to an inert gas source 92358 10 200401362 22 and connected to the inner volume 216 at the other end. In addition, a first supply line 2 1 9 may be provided, one end of which is connected to the inner volume 2 1 6 and the other end is connected to a discharge source (not shown). Although the first and second supply lines 218, 219 are shown as being connected to the upper and lower ends of the plating reactor 21, they can also be configured in any suitable manner, depending on the processing tool used in The type of plating reactor 2 1 0 used for feeding inert gas into the inner volume 2 丨 6. During operation, the source 220 supplies the amount of sulfur oxide and oxygen in the first plating reactor 210. It is used to describe that the oxygen concentration of the oxygen concentration deviates by at least 16% ', and is preferably lower than that of the plate 212 and the substrate is plated. Exchange with gas according to the processing department's substantially inert atmosphere. 'Inert gas (such as nitrogen) can be supplied from the inert gas to the inner volume 2 1 6 in line 2 and 8 to form a substantially inert atmosphere in the part, thereby significantly reducing the second. Note that the "substantially inert atmosphere" used in this article „ Atmosphere and surrounding atmosphere (usually the atmosphere in a clean room) 20% atmosphere, so its maximum oxygen concentration is about 5 / 0. and more preferably less than 1%. Subsequently, the type of the tool 200 can be accommodated in the base 210 and the substrate 200 can be accommodated by the substrate holder 211, so that the surrounding atmosphere can be brought into contact with the inner volume 2] 6 in order to perform a certain amount. Therefore, in a specific example, the degree !! Overpressure, thereby forming a secondary airflow, which will reduce the substrate from the surrounding atmosphere to a minimum due to the airflow. It is possible to load the substrate holder 21 丨 which has a certain internal volume 2 1 7 generated by the gas supply system 2 1 7 to maintain the non-disposition during operation in a favorable manner. A certain amount of overpressure that depends on the oxygen and dioxide continuous gas flow of the inner volume 2 1 6 has the inner volume 2] 6 isolated from the surrounding atmosphere and 92358 200401362
$分密封的電鍍反應器210中。將基板212安置在基板夾 ./、 1 1上之後，及或S午在關閉用於基板傳送至基板夹具2 J J ' 之後，可刼作供氣糸統218 ,例如利用第二供應管 線219使其吹洗内體積216，以進一步減少在將基板212 =入電鍍反應器210期間可能已導入之氧和二氧化硫的 量。接著，開始運轉電鍍反應器210,其中與習知設備相 反，該電鏟製程在實質惰性内部氣氛中進行’因此顯著減 籲短在欲鍍覆於基板212上之銅表面處的腐餘過程。 乐2b圖概要表示具有連接至電鍍反應器21〇之附加製 程模組的處理工具200。在第2b圖中，處理工具2〇〇還包 括電鍍反應器21G下游的沖洗站23Q及沖洗站23Q下游的 乾燥站250。電鍍反應器210、沖洗站23〇及乾燥站25〇 係藉由如箭頭261所示之配置以供基板輪送的複數個基板 輸送模組260所連接。處理工具2〇〇還包括定義出内體積 2〇2的罩蓋20 1。於一具體實例中，係配置罩蓋2〇 1以實質 • 上防止與周圍大氣的氣體交換，而在另一具體實例中，罩 蓋201的目的係顯著減少内體帛202與周圍大氣的氣體交 換。罩蓋201可包括在個別製程模組與站之間形成某種程 度分隔的複數個擋板203。 於一具體實例中’如第2b圖所描繪者，供氣系統2丄7 另外包括配置將惰性氣體供給到至少—部分之警程站 210、23 0、250及輸送模組260的複數個供應管線2〇4。於 另一具體實例中，尤其是當罩蓋2〇1隔絕周圍大氣而實質 上完全密封内體積202時，可提供一或多個排放管線 92358 ]2 200401362 不）以形成連續氣流。請注意第2b圖所描繪之具體實例僅 為說明用之態樣，在不脫離本發明之範疇的情況下：可進 行許多變化及修飾。例如，根據製程站21〇、23〇、250及 輸送模組260的配置，可用許多方式改變擋板2〇3之裝置、 設計^和排列。特別是，沖洗站2 3 〇及乾燥站2 5 〇係圖示為“開 放本統，而在另一具體實例中，這些站可包含製 讳ϋ ^ 主· 衣王至可具有需要提供額外供應管線（例如供應管線2 1 8、 219)的個別圍壁。此外，輸送模組26〇可包含任何類型的 晶圓搬運裝置，因此可設計擋板203以便容許相鄰製ς站 的裝载和卸載作業，同時減少相鄰站與模組之間的氣體交 換。在另一具體實例中，尤其是當沖洗站230及乾燥站25〇 分別包括具有圍壁的製程室時，可完全省略擋板2〇3。 在操作過程中，將具有在參考第2a圖所述之條件下電 鐘之鋼表面的基板2 1 2傳送至電鍍反應器2丨〇下游的製程 模組260。由於實質惰性氣氛係藉由供應管線204在形成 内肢積202之中，因此實質上會防止先前已鍍覆銅的潮濕 敏感表面與氧及/或二氧化硫接觸。特別是，基板212典型 G括凡成鍍覆製程時的電解液薄膜，而内體積2〇2中的實 貝U f生氣氛在輛送至沖洗站2 3 〇的過程中，可降低新鍍覆 之銅表面的腐蝕機率。由於基板2 } 2係於實質惰性氣氛中 在冲洗站2 j 0及乾燥站2 5 〇中處理，沖洗站2 3 〇及乾燥站 250包括在這些製程站之間的輪送，所以在鍍覆後製程中 也會使銅的腐蝕減到最少。 應注意根據製程需求，處理工具2〇〇可包括更多的模 92358 .1 /|、 200401362 組，戈口 列如’沖洗站2 3 0 OJ代衣爽埋含有 密金屬化層之基板所 有丨月 要的彳壬何清洗站。此外，其他JL研 實例，尤其是涉及“、、？ —，，▲ / 、式處理基板2 1 2的製程站，可包括 用以持繽地減少對應戶^邱友 局#氣氖之濕氣的排放管線，例如雪 鍍反應器2 1 0的第― 昂—供應管線2 1 9。 如第2b圖所千ώΛι _ ν9板組結構，在不過度影響相鄰製程 與模組之氣氛的情汉τ _In the sealed electroplating reactor 210. After the substrate 212 is placed on the substrate holder, 11 or 11 or after it is closed for substrate transfer to the substrate holder 2 JJ ', it can be used as the gas supply system 218, for example, using the second supply line 219 It purges the internal volume 216 to further reduce the amount of oxygen and sulfur dioxide that may have been introduced during the substrate 212 = into the plating reactor 210. Then, the electroplating reactor 210 was started to operate, in which, contrary to the conventional equipment, the shovel process was performed in a substantially inert internal atmosphere 'and thus significantly reduced the corrosion process at the copper surface to be plated on the substrate 212. Fig. 2b schematically shows a processing tool 200 having an additional process module connected to the plating reactor 21o. In Fig. 2b, the processing tool 2000 also includes a washing station 23Q downstream of the plating reactor 21G and a drying station 250 downstream of the washing station 23Q. The plating reactor 210, the washing station 23, and the drying station 25 are connected by a plurality of substrate transfer modules 260 arranged for substrate rotation as shown by an arrow 261. The processing tool 2000 also includes a cover 20 1 defining an internal volume 200. In one specific example, the cover 201 is configured to substantially prevent gas exchange with the surrounding atmosphere, while in another specific example, the purpose of the cover 201 is to significantly reduce the gas in the inner body 帛 202 and the surrounding atmosphere. exchange. The cover 201 may include a plurality of baffles 203 forming a certain degree of separation between individual process modules and stations. In a specific example, 'as depicted in Figure 2b, the gas supply system 2 丄 7 also includes a plurality of supplies configured to supply inert gas to at least part of the police station 210, 230, 250, and delivery module 260. Pipeline 204. In another specific example, one or more discharge lines may be provided (especially when the cover 205 isolates the surrounding atmosphere and substantially completely seals the inner volume 202), in particular when the cover 205 is provided to form a continuous air flow. Please note that the specific example depicted in Figure 2b is for illustrative purposes only, without departing from the scope of the present invention: many changes and modifications can be made. For example, according to the configuration of the process stations 21, 23, 250, and the conveying module 260, the device, design, and arrangement of the baffle 203 can be changed in many ways. In particular, the washing station 2300 and the drying station 2500 are shown as "open systems," but in another specific example, these stations may include taboos ^ Master · Yiwangzhi may have additional supplies on demand Individual walls of pipelines (such as supply lines 2 18, 219). In addition, the transport module 26 can contain any type of wafer handling device, so a baffle 203 can be designed to allow loading and Unloading operations, while reducing the gas exchange between adjacent stations and modules. In another specific example, especially when the washing station 230 and the drying station 25 respectively include a process chamber with a surrounding wall, the baffle can be completely omitted 2 03. During operation, the substrate 2 1 2 having the steel surface of the electric clock under the conditions described in reference to FIG. 2 a is transferred to the process module 260 downstream of the plating reactor 2. Due to the substantially inert atmosphere It is formed in the inner limb volume 202 by the supply line 204, and thus substantially prevents the moisture-sensitive surface that has been previously plated with copper from contacting with oxygen and / or sulfur dioxide. In particular, the substrate 212 typically includes a plating process. Electrolyte film, In the process of sending the solid Uf atmosphere in the internal volume of 202 to the washing station, the corrosion probability of the newly plated copper surface can be reduced. Since the substrate 2} 2 is in a substantially inert atmosphere, Rinsing station 2 j 0 and drying station 2 5 0, flushing station 2 3 0 and drying station 250 are included in the rotation between these process stations, so copper corrosion is also minimized during the plating process. It should be noted that according to the process requirements, the processing tool 2000 may include more molds 92358.1 //, 200401362 group, Gekoulie such as' rinsing station 2 3 0 OJ, all the substrates containing dense metallization layer are buried丨 Yun Renhe cleaning station required by the month. In addition, other JL research examples, especially involving ",,? — ,, ▲ /, The processing station for processing the substrate 2 1 2 may include a discharge line to reduce the humidity of the corresponding household ^ 邱 友 局 # gas neon, such as the snow plating reactor 2 1 0 ― Aung—supply line 2 1 9. As shown in Figure 2b, the structure of the _9 board group does not affect the atmosphere of adjacent processes and modules excessively. _ _
L下，還可分別進出製程站及/或輸送 組。例如處理工且？ π 、 ^ 0的杈組配置利用如第一和最後輪送 ^ 在不過度損害剩餘内體積2〇2中之惰性氣氛的 ί月況下可奋卉將基板裝載至處理工具200或從該處 具將基板卸載。 夏弟2c圖概要表示本發明之另一說明實例，其中處理工 ，細之供氣系統217包括配置用以從該惰性氣體中移除 虱及/或—氧化硫的反應器22 1。反應器22 1可為任何類型 的化學及/或物理反應器，該反應器包含例如可容許用此項 技=中已為吾人所熟知的方法移除氧及/或二氧化硫之催、 ，劑。由於主要量的惰性氣體可重新製造及再利用，因此 :處理工具200需要供應大量的惰性氣體或是供應相當昂 貝的&性氣體（例如氬或其他稀有氣體）時，此具體實例係 特別有利。當使用如第2c圖所示的供氣系統217時，: '、配复罩蓋201使洩漏至周圍大氣的惰性氣體減到最少。 第2d圖概要表示處理工具2〇〇的進—步變化。在第 ^圖中，處理工具200包括連接至控制單元2 70的複數個 感涮兀件27]，該控制罩元#依序有效連接至包含惰性氣 200401362 體來源22〇之供氣系統217。感 、、P丨丨P ^ , , 几仟27丨可包括壓力感 / '、乳感測态、二氧化硫感測 浐碰认〇、々 扣寻可將感測元件271 挺i' —或多個製程站2 i 〇、23〇、 及私送模组2 6 0。 配置控制單元270以接收感測元件？71 、、’ Μ ^ ,* ,, ~ 的t唬輸出及根 包括測信號進行程序控制。例如供氣系統川可 〜:：.f:調整通過供應…^ 的极肢流動。對應裝置在此 知，可4 又U T匕為吾人所熟 了 G括閥件、泵 '風扇等。 女著才工制單元2 7 0可相鹿地士用身欠,, 整裝置，、 〜也凋i 一或多個此等流動調 又’以控制管線2 0 4、2 1 8、？ 1 〇 *人a + 並控制内F接〇Λ 19中的〜體流動，藉此 處，例士 _ 2内邛的氣氛。例如，在第一輸送模組260 處理工：將基板載入個別製程站或將外部供應之基板載入 可有利於 令θ ~增加流入電鍍反應器2 1 0的流體， 二氧化铲有放減少擴散進入電鍍反應胃2 1 〇中&氧及/或 組260 ^ ^樣也可控制在其他製程站230、25〇及輸送模 供的挪旦2汽貝惰性氣氛。此外，根據感測元件271所提 2〇〇之Q果控制忒貫質惰性氣氛，可將供給至處理工具 資源。 虱的里減少至實際上所需要的量，因而節省 因此，a (例如電铲“發明有效提供能降低在電化學方法處理基板 中藉由、电拋光等）所涉及之製程中銅腐蝕的機率，其 性氣氣，:乳流及/或提供罩蓋形成圍繞該基板的實質惰 實質传，丨生:罩蓋係定義出含有實質惰性氣氛之内體積，該 '氣氛在該處理工具的内部或至少在該處理工具之 92358 200401362 一部分的内部。與電化學方法處理基板相關的a他制矛。 例如基板之裝m、輸送、清洗、乾燥及暫存，也最二 質情性氣氛内部進行。應注意可在個別處理工具中或是在 配置用以實施兩個或更多個製程，或甚至是完整= 的處理工且中# 隹# 一 α^ 中來進仃這些製程，本發明係渴蓋任何類型的 處理工具。 應庄意雖然參考銅鍍专夾 鍍復采敘述本發明，但本發明之溽 理也可輕易地應用 象 基板，1中實m 卞法處理含有納以外之金屬的 Μ 月性乳氖係有利於提升製程品質。 上述之特疋具體實例僅作為說明之用，如同孰習此 技術者所顯而易見^ Ν热白此項 Μ卜 本％明可用不同但卻等效的方式加以 修飾及實施，而得 力式加Μ 步驟可用不同順序力ρ 效盈。例如上述製程 圍所述者以外貫施。此外，…列申請專利範 細節。因此顯本文中所示之㈣或設計的 變或修飾，且此等，㈣示之料具體實例可加以改 的範圍内。故本文：，王邛均視為在本發明之範疇與精神 圍所提出者。 “求之保護範圍係如下列申請專利範 【圖式簡單說明】 麥考下列說明祐6士 的參照數字等同…附圖可瞭解本發明，附圖中相同 — 么相同的元件，其中： 第1圖表示麵的泰 diagram); 兒位 M pH 值座標圖（p〇urbaix 第2a圖表示插姑； 4 、發明之—說明具體實例之電化學 92358 16 200401362 方法處理基板之示意圖的簡化部分； 第2b圖概要表示第2a圖之處理工具的圖，該處理工 具包括電化學方法處理基板中所涉及的其他製程站； 第2c圖表示根據本發明之具有再猶環惰性氣體之處 理工具的概要圖；及 第2d圖表示包括第2&圖之處理工具的系統概要圖， 該糸統係提供根據本發明之另一說明具體實例的改進製程 ,k e本龟明可容許各種修飾及替代形式，但已利用 ^中的實例表示及本文詳細說明本發明之特^具體實例 ::而應瞭解本文中特定具體實例之說明並不意欲用來將 :明限制在已揭示的特定形式上’但是相反地，其目的 盥… 入如後附申請專利範圍所界定之本發明之精 /、扼、之範圍内的所有修飾、等效及替代方案。 200 處理工具 202 内體積 204 供應管線 211 可旋轉基板夾具 213 陽極 215 擴散元件 217 供氣系統 219 第二供應管線 230 沖洗站 201 罩¥ 1 JWL 203 擒板 2 10 鍍覆反應器 212 基板 214 入口 216 内體積 2 18 第一供應管線 220 惰性氣體來源 250 乾燥站 92358 17 200401362 260 輸送模組 261 箭頭 270 控制單元 27 1 感測元Under L, you can also enter and exit the process station and / or the transport group separately. For example handlers? The π, ^ 0 branch configuration utilizes, for example, the first and last rotations. ^ The substrate can be loaded onto the processing tool 200 or from there without excessively damaging the inert atmosphere in the remaining internal volume 002. Unload the substrate. The Xiadi 2c diagram schematically illustrates another illustrative example of the present invention, in which the processor, the fine gas supply system 217 includes a reactor 221 configured to remove lice and / or sulfur oxides from the inert gas. The reactor 221 may be any type of chemical and / or physical reactor containing, for example, a catalyst that allows the removal of oxygen and / or sulfur dioxide using a method that is well known to me. Because the main amount of inert gas can be remanufactured and reused, this specific example is special when the processing tool 200 needs to supply a large amount of inert gas or a rather ambitious & gas (such as argon or other noble gases). advantageous. When using the air supply system 217 as shown in Fig. 2c, the following: "With the cover 201, the inert gas leaking to the surrounding atmosphere is minimized. Fig. 2d schematically shows a further change of the processing tool 200. In the figure, the processing tool 200 includes a plurality of sensing elements 27 connected to a control unit 2 70, and the control cover element # is sequentially and effectively connected to a gas supply system 217 containing an inert gas 200401362 body source 22. Sense, P 丨 丨 P ^, 仟 27 丨 can include pressure / /, milk sensing state, sulfur dioxide sensing (浐), 々 (寻) can hold the sensing element 271 to i '— or more Process station 2 i 〇, 23〇, and private delivery module 260. The control unit 270 is configured to receive the sensing element? 71, ′ Μ ^, * ,, ~ tbl output and root including the measured signal for program control. For example, the gas supply system Chuanke ~ ::. F: adjusts the flow through the poles of the supply ... ^. The corresponding device is known here, but I know the valve and the pump, the fan, and so on. The female talented industrial unit 2 7 0 can be used by the deer, the entire device, ~~ also with one or more of these mobile adjustments' to control the pipeline 2 0 4, 2 1 8? 1 〇 * person a + and control the flow of the body in the inner F connection 〇Λ 19, thereby taking the place, the atmosphere of _ 2 internal convulsions. For example, in the first conveying module 260 processor: loading substrates into individual process stations or loading externally supplied substrates can be beneficial to increase θ ~ fluid flowing into the plating reactor 2 10, and reduce the release of the shovel. Diffusion into the electroplating reaction stomach 2 1 0 & oxygen and / or group 260 ^ ^ ^ ^ ^ ^ ^ ^ can also be controlled in other process stations 230, 25 and the inert atmosphere of the Norwegian 2 autoclaves supplied by the mold. In addition, according to the Q-effect of the 200 provided by the sensing element 271, a continuous inert atmosphere can be controlled, which can be supplied to the processing tool resource. The amount of lice is reduced to the amount actually needed, thus saving. Therefore, a (such as the "shovel" invention effectively provides a method that can reduce the probability of copper corrosion in the process involved in electrochemical processing of substrates, electropolishing, etc.) Its sexual qi: milk flow and / or providing a cover to form a substantially inert, substantial transmission around the substrate, 丨 Health: The cover defines a volume containing a substantially inert atmosphere, the 'atmosphere is inside the processing tool Or at least part of 92358 200401362 of the processing tool. Other spears related to the electrochemical treatment of substrates. For example, the substrate loading, transportation, cleaning, drying, and temporary storage are also carried out in the second temperament atmosphere. It should be noted that these processes can be performed in individual processing tools or in processors configured to implement two or more processes, or even complete = # 隹 # 一 α ^, the present invention is Cover any type of processing tool. Although the invention is described with reference to the copper plating method, the principles of the invention can also be easily applied to substrates. The genus of M milky neon is conducive to improving the quality of the process. The above specific examples are only for illustration, as obvious to those skilled in the art ^ Ν hot white This Mb %% can be used differently but wait Effective methods can be modified and implemented, and the effective plus M step can be used in different orders to effect profit. For example, the above process can be implemented outside of the above. In addition, ... details of the patent application are listed. Changes or modifications to the design, and the specific examples of the materials shown can be modified. Therefore, in this article: Wang Xi is considered to be within the scope and spirit of the present invention. It is as follows for the patent application. [Simplified illustration of the drawing] The following reference numbers of McCao are equivalent to the following figures ... The drawings can understand the present invention, the same in the drawings—the same elements, of which: Figure 1 shows the face of Thai diagram); M pH value coordinate diagram of the child (p0urbaix Figure 2a shows the insert; 4. Invention—simplified illustration of a specific example of the electrochemical method 92358 16 200401362 method of processing a substrate; a simplified part of the schematic diagram; FIG. 2b is a diagram schematically showing a processing tool of FIG. 2a, which includes other process stations involved in electrochemically processing a substrate; FIG. 2c is a schematic diagram showing a processing tool having a re-inert gas according to the present invention. Figure 2d shows a schematic diagram of a system including the processing tools of Figure 2 &, which system provides an improved process according to another illustrative embodiment of the present invention. Keguiming can tolerate various modifications and alternative forms, but The specific examples of the invention have been used in the illustrations and detailed descriptions of the invention: It should be understood that the descriptions of the specific specific examples in this article are not intended to limit the expressions to the specific forms disclosed, but to the contrary , The purpose of which is to include all modifications, equivalents, and alternatives within the scope of the essence, simplicity, and scope of the present invention as defined in the appended claims. 200 Processing tool 202 Internal volume 204 Supply line 211 Rotatable substrate holder 213 Anode 215 Diffusion element 217 Gas supply system 219 Second supply line 230 Washing station 201 Hood ¥ 1 JWL 203 Pallet plate 2 10 Plated reactor 212 Substrate 214 Inlet 216 Internal volume 2 18 First supply line 220 Inert gas source 250 Drying station 92358 17 200401362 260 Conveying module 261 Arrow 270 Control unit 27 1 Sensor element