[go: up one dir, main page]

TWI264055B - Dielectric isolation type semiconductor device - Google Patents

Dielectric isolation type semiconductor device

Info

Publication number
TWI264055B
TWI264055B TW094108017A TW94108017A TWI264055B TW I264055 B TWI264055 B TW I264055B TW 094108017 A TW094108017 A TW 094108017A TW 94108017 A TW94108017 A TW 94108017A TW I264055 B TWI264055 B TW I264055B
Authority
TW
Taiwan
Prior art keywords
region
drift
oxide film
dielectric
drain electrode
Prior art date
Application number
TW094108017A
Other languages
English (en)
Other versions
TW200535969A (en
Inventor
Hajime Akiyama
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200535969A publication Critical patent/TW200535969A/zh
Application granted granted Critical
Publication of TWI264055B publication Critical patent/TWI264055B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H10P90/1914—
    • H10W10/181—

Landscapes

  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW094108017A 2004-04-21 2005-03-16 Dielectric isolation type semiconductor device TWI264055B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004125982A JP4618629B2 (ja) 2004-04-21 2004-04-21 誘電体分離型半導体装置

Publications (2)

Publication Number Publication Date
TW200535969A TW200535969A (en) 2005-11-01
TWI264055B true TWI264055B (en) 2006-10-11

Family

ID=35160466

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094108017A TWI264055B (en) 2004-04-21 2005-03-16 Dielectric isolation type semiconductor device

Country Status (7)

Country Link
US (1) US7417296B2 (zh)
JP (1) JP4618629B2 (zh)
KR (1) KR100726898B1 (zh)
CN (2) CN101388409B (zh)
DE (1) DE102005018378B4 (zh)
FR (1) FR2869457B1 (zh)
TW (1) TWI264055B (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007012490A2 (de) * 2005-07-27 2007-02-01 Infineon Technologies Austria Ag Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
US8461648B2 (en) * 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
JP5055813B2 (ja) * 2006-04-10 2012-10-24 富士電機株式会社 Ｓｏｉ横型半導体装置
JP2008227474A (ja) * 2007-02-13 2008-09-25 Toshiba Corp 半導体装置
JP5105060B2 (ja) * 2007-11-16 2012-12-19 三菱電機株式会社 半導体装置およびその製造方法
JP2009141237A (ja) * 2007-12-10 2009-06-25 Panasonic Corp 半導体装置及びその製造方法
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
JP2011165924A (ja) * 2010-02-10 2011-08-25 Mitsubishi Electric Corp 半導体装置
US8623732B2 (en) * 2010-06-17 2014-01-07 Freescale Semiconductor, Inc. Methods of making laterally double diffused metal oxide semiconductor transistors having a reduced surface field structure
JP5610930B2 (ja) 2010-08-30 2014-10-22 三菱電機株式会社 半導体装置
JP5565309B2 (ja) * 2010-12-29 2014-08-06 三菱電機株式会社 半導体装置
KR101380309B1 (ko) * 2012-05-23 2014-04-02 주식회사 동부하이텍 커패시터 및 그 형성 방법
JP6053415B2 (ja) * 2012-09-19 2016-12-27 三菱電機株式会社 半導体装置
FR3011124A1 (fr) * 2013-09-26 2015-03-27 St Microelectronics Tours Sas Composant scr a caracteristiques stables en temperature
US9666710B2 (en) * 2015-05-19 2017-05-30 Nxp Usa, Inc. Semiconductor devices with vertical field floating rings and methods of fabrication thereof
DE102015122387B4 (de) * 2015-12-21 2023-09-21 Infineon Technologies Ag Leistungshalbleiterbauelemente, Halbleiterbauelemente und ein Verfahren zum Anpassen einer Anzahl von Ladungsträgern
CN105633140B (zh) * 2016-03-30 2018-06-12 南京邮电大学 一种双层部分soi ligbt器件及其制造方法
US10586865B2 (en) 2017-09-29 2020-03-10 Cirrus Logic, Inc. Dual gate metal-oxide-semiconductor field-effect transistor
FR3091021B1 (fr) * 2018-12-20 2021-01-08 St Microelectronics Tours Sas Thyristor vertical
CN115274849A (zh) * 2021-04-29 2022-11-01 苏州华太电子技术股份有限公司 Ldmos器件
CN119069359B (zh) * 2024-11-05 2025-03-25 浙江创芯集成电路有限公司 半导体结构及其形成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343067A (en) * 1987-02-26 1994-08-30 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
DE69233742D1 (de) 1991-01-31 2008-09-18 Toshiba Kk Halbleiterbauelement mit hoher Durchbruchspannung
JP3293871B2 (ja) * 1991-01-31 2002-06-17 株式会社東芝 高耐圧半導体素子
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
EP0562352B1 (en) * 1992-03-26 1998-02-18 Texas Instruments Incorporated High voltage structures with oxide isolated source and RESURF drift region in bulk silicon
DE4231310C1 (de) 1992-09-18 1994-03-24 Siemens Ag Verfahren zur Herstellung eines Bauelementes mit porösem Silizium
JP2739018B2 (ja) 1992-10-21 1998-04-08 三菱電機株式会社 誘電体分離半導体装置及びその製造方法
JPH0945762A (ja) 1995-07-26 1997-02-14 Matsushita Electric Works Ltd 半導体素子基体およびその製造方法
JP3435930B2 (ja) * 1995-09-28 2003-08-11 株式会社デンソー 半導体装置及びその製造方法
JP3082671B2 (ja) 1996-06-26 2000-08-28 日本電気株式会社 トランジスタ素子及びその製造方法
KR100225411B1 (ko) * 1997-03-24 1999-10-15 김덕중 LDMOS(a lateral double-diffused MOS) 트랜지스터 소자 및 그의 제조 방법
KR19980084367A (ko) * 1997-05-23 1998-12-05 배순훈 실리콘-온-인슐레이터 기판을 사용한 저감 표면 전계형 횡형 이중-확산 모스 트랜지스터에 대한 모델링 방법
JP4785335B2 (ja) * 2001-02-21 2011-10-05 三菱電機株式会社 半導体装置およびその製造方法
KR100403519B1 (ko) * 2001-03-07 2003-10-30 재단법인서울대학교산학협력재단 실리콘 이중막 전력 트랜지스터 및 그 제조 방법
GB0107408D0 (en) 2001-03-23 2001-05-16 Koninkl Philips Electronics Nv Field effect transistor structure and method of manufacture
JP4020195B2 (ja) * 2002-12-19 2007-12-12 三菱電機株式会社 誘電体分離型半導体装置の製造方法

Also Published As

Publication number Publication date
JP4618629B2 (ja) 2011-01-26
KR20060045747A (ko) 2006-05-17
DE102005018378A1 (de) 2005-11-17
FR2869457A1 (fr) 2005-10-28
US7417296B2 (en) 2008-08-26
DE102005018378B4 (de) 2011-01-05
KR100726898B1 (ko) 2007-06-14
FR2869457B1 (fr) 2008-02-01
US20050253170A1 (en) 2005-11-17
CN101388409A (zh) 2009-03-18
CN101388409B (zh) 2010-09-08
CN100474620C (zh) 2009-04-01
JP2005311075A (ja) 2005-11-04
CN1691351A (zh) 2005-11-02
TW200535969A (en) 2005-11-01

Similar Documents

Publication Publication Date Title
TWI264055B (en) Dielectric isolation type semiconductor device
US6995428B2 (en) High voltage LDMOS transistor having an isolated structure
CN100459152C (zh) 具有分割阱结构的隔离高压ldmos晶体管
TW200426980A (en) Semiconductor device, method of manufacturing semiconductor device, and method of evaluating manufacturing process of semiconductor device
TW200929381A (en) Lateral double diffused metal oxide semiconductor transistor and method for manufacturing the same
EP2860762B1 (en) High voltage junction field effect transistor
US9159795B2 (en) High side DMOS and the method for forming thereof
TW399297B (en) Semiconductor device and manufacturing method thereof
CN103329268A (zh) 半导体器件及制造其的方法
EP1083607A2 (en) High voltage SOI semiconductor device
CN106409825A (zh) 在高阻衬底上形成的半导体器件和射频模块
US7388255B2 (en) Semiconductor device having separation region
EP1976011A3 (en) High breakdown voltage semiconductor circuit device and method of manufacturing the same
EP1394860A3 (en) Power devices with improved breakdown voltages
SG140454A1 (en) Soi chip with recess-resistant buried insulator and method of manufacturing the same
JPH01103851A (ja) 高耐圧半導体素子
TW200601566A (en) Semiconductor apparatus and manufacturing method thereof
US9640551B2 (en) Passive device and radio frequency module formed on high resistivity substrate
TW200614506A (en) Semiconductor device and production methods therefor
CN106257671B (zh) 在高阻衬底上形成的半导体器件和射频模块
TW200520035A (en) Dielectric isolation type semiconductor device and method for manufacturing the same
CN100449782C (zh) 具隔离结构的金属氧化物半导体场效晶体管及其制作方法
JPWO2003075353A1 (ja) 半導体素子
TW200628913A (en) Thin-film semiconductor device, electro-optical device, and electronic apparatus
TW200620538A (en) Semiconductor structure for isolating integrated circuits of various operating voltages

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees