TWI246879B - Thermal interface material and method for making same - Google Patents
Thermal interface material and method for making same Download PDFInfo
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- TWI246879B TWI246879B TW93110604A TW93110604A TWI246879B TW I246879 B TWI246879 B TW I246879B TW 93110604 A TW93110604 A TW 93110604A TW 93110604 A TW93110604 A TW 93110604A TW I246879 B TWI246879 B TW I246879B
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- interface material
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- carbon nanotube
- carbon nanotubes
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- 239000000463 material Substances 0.000 title claims abstract description 142
- 238000000034 method Methods 0.000 title claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 90
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 84
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 84
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 238000005452 bending Methods 0.000 claims abstract description 4
- 229920002521 macromolecule Polymers 0.000 claims abstract 7
- 238000003892 spreading Methods 0.000 claims abstract 2
- 229920000642 polymer Polymers 0.000 claims description 35
- 239000002861 polymer material Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000007791 liquid phase Substances 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 239000004575 stone Substances 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 2
- 229910021392 nanocarbon Inorganic materials 0.000 claims description 2
- 239000007790 solid phase Substances 0.000 claims description 2
- 239000012188 paraffin wax Substances 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims 1
- 239000003054 catalyst Substances 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229920000049 Carbon (fiber) Polymers 0.000 description 3
- 239000004917 carbon fiber Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 244000239659 Eucalyptus pulverulenta Species 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- Carbon And Carbon Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
1246879 案號 931106041246879 Case No. 93110604
五、發明說明(1) 【發明所屬之技術領域^ 本發明係關於一種熱介面材料及其製造方法’尤指〜 種利用奈米碳管導熱之熱介面材料及其製造方法。 【先前技術】 近年來,隨著半導體器件集成工藝之快速發展,半導 體器件之集成化程度越來越高。惟,器件體積變得越來越 小,其對散熱之需求越來越高,已成為一個越來越重要之 問通。為滿足該需要,風扇散熱、水冷輔助政熱及熱管敢 熱等各種散熱方式被廣泛運用,旅取得一定散熱效果,但 因散熱器與半導體集成器件之接觸介面不平整,一般相互 接觸面積不到2%,未有一個理想之接觸介面,從根本上影 響半導體器件向散熱器傳遞熱量之效果,故,於散熱器與 半導體器件之間增加一具較高熱傳遞係數之介面材料以增 加介面之接觸程度實為必要。… 曰 傳統熱介面材料係將導熱係數較高之顆粒分散 基體以形成複合材料,如石墨、氮化硼、氧化石夕、氧:膠 S之Ξΐ其ΪΪ屬丄:此f材料之導熱性能取決於銀膠基 使用時為液態相變材料為基體之複合材料因其 ^ ^ it m & ^...... /原表面浸潤,故接觸熱阻較小,& 分修興橡膠為載體之複 平乂】、,而 料一普遍缺陷係整個材埶^阻相對較大。該類材 1仏κ,這已經越來越材不匕熱声係丰數較小,典型值為 對散熱之需求,而增加銀 ^導體集成化程度之提高 與顆粒之間儘量相互接觸以二熱顆粒含量使得顆粒 數,如某些特殊之介面材# : "個歿合材料之導埶係 一 材科因此可達到4,/mK,惟、,係銀 1246879 案號 93110604 94. 23 年月曰 修正 五、發明說明(2) 膠基體之導熱顆粒含量增加至一定程度時,會使銀膠基體 失去原本之性能,如油脂會變硬,從而浸潤效果變差,橡 膠亦會變得較硬,從而失去應有之柔韌性,這都將使熱介 面材料性能大大降低。 近來有一種熱介面材料,係將定向排列之導熱係數約 為1100 W/mK之碳纖維一端或整體用聚合物固定,從而於 熱介面材料之垂直方向形成定向排列之碳纖維陣列,以使 每一碳纖維均可形成一導熱通道,該方式可有效提高熱介 面材料之導熱係數,達到5 0 -90 W/mK。、惟,該類材料一個 缺點係厚度必須大於4 〇微米,而整個熱介面材料之導熱係 數與薄膜之厚度成反比,故當其熱阻降低至一定程度,進 一步降低之空間相當有限。 為改善熱介面材料之性能,提高其熱傳導係數,各種 材料被廣泛試驗。Savas Berber等人於2 000年於美國物 理學會上發表一篇名為"Unusually High Thermal Conductivity of Carbon Nano tubes ” 之文章指出,’’ Z’f 形 10)奈米碳管於室溫下導熱係數可達6 6 〇〇 W/mK,具V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a thermal interface material and a method for producing the same, and particularly to a thermal interface material using a carbon nanotube heat conduction and a method for producing the same. [Prior Art] In recent years, with the rapid development of semiconductor device integration processes, the degree of integration of semiconductor devices has become higher and higher. However, as devices become smaller and smaller, and their demand for heat dissipation is increasing, it has become an increasingly important question. In order to meet this need, various heat dissipation methods such as fan heat dissipation, water cooling auxiliary heating and heat pipe heat are widely used, and the brigade obtains a certain heat dissipation effect, but the contact interface between the heat sink and the semiconductor integrated device is not flat, and generally the contact area is not uniform. 2%, there is no ideal contact interface, which fundamentally affects the effect of heat transfer from the semiconductor device to the heat sink. Therefore, a higher thermal transfer coefficient interface material is added between the heat sink and the semiconductor device to increase interface contact. The degree is really necessary. ... 曰The traditional thermal interface material is a high-heat-conducting particle-dispersing matrix to form a composite material, such as graphite, boron nitride, oxidized stone, oxygen, rubber S, and its 丄: the thermal conductivity of this f material depends on When the silver gum base is used, the composite material with the liquid phase change material as the matrix is less in contact with the original surface due to its ^^ it m & ^... / original surface infiltration, & The composite of the carrier is 、,], and the general defect of the material is relatively large. The material is 1仏κ, which has become more and more accurate. The typical value of the thermoacoustic system is small, and the typical value is the demand for heat dissipation. The increase of the degree of integration of the silver conductor is as close as possible to the particles. The hot particle content makes the number of particles, such as some special interface materials #: " a composite material of the guide family, a material can therefore reach 4, / mK, only, silver 1246879 case number 93110604 94. 23 years Lunar Amendment V. Description of the invention (2) When the content of the thermal conductive particles of the rubber matrix is increased to a certain extent, the silver gel matrix loses its original properties. Hard, thus losing the flexibility it deserves, will greatly degrade the performance of the thermal interface material. Recently, there is a thermal interface material in which an aligned carbon fiber having a thermal conductivity of about 1100 W/mK is fixed at one end or entirely by a polymer, thereby forming an aligned carbon fiber array in the vertical direction of the thermal interface material to make each carbon fiber. A heat conduction channel can be formed, which can effectively improve the thermal conductivity of the thermal interface material to reach 50-90 W/mK. However, one of the disadvantages of this type of material is that the thickness must be greater than 4 μm, and the thermal conductivity of the entire thermal interface material is inversely proportional to the thickness of the film. Therefore, when the thermal resistance is reduced to a certain extent, the space for further reduction is rather limited. In order to improve the performance of the thermal interface material and increase its heat transfer coefficient, various materials have been extensively tested. Savas Berber et al. published an article entitled "Unusually High Thermal Conductivity of Carbon Nanotube" at the American Physical Society in 2000. The ''Z'f-shaped 10) carbon nanotubes conduct heat at room temperature. The coefficient can reach 6 6 〇〇W/mK, with
體内容可參閱文獻 Phys· Rev. Lett( 20 0 0 ),Vol· 84,P 接觸See Phys· Rev. Lett ( 20 0 0 ), Vol· 84, P for physical content.
第8頁 4613。研究如何將奈米碳管用於熱介面材料並充分發揮其 優良之導熱性成為提高熱介面材料性能之一個重要方向了 美國專利第6, 407, 9 22號揭示一種利用奈米碳管導熱 之熱介面材料,其係將奈米碳管摻到銀膠基體結成_體、、、, 通過〉主模方式製得熱介面材料。該熱介面材料之兩導熱表 2 =面積不等,其中與散熱器接觸一面之面積大於與ί二 面之面積,這樣可有利於散熱器散熱。惟,該方、、= 1246879 案號 五、發明說明(3) 製得之熱介面 面材料厚度較 熱介面材料體 不相適應,且 於基體材料中 保’因而熱傳 之優勢未充分 有鑒於此 小,柔拿刃性好 【内容】 為解決先 厚度薄、導熱 之熱介面材料 本發明之 法。 為實現本 其包括一高分 中;該熱介面 第二表面,該 分佈且沿熱介 出兩表面形成 為實現本 料之製造方法 將奈米碳管陣 系轉化為固相 ^U〇6〇£ 材料有 大,雖 積之增 該熱介 未有序 導之均 利用, ’提供 ’導熱 前技術 係數大 不足 該熱 加, 面材 排列 勻性 影響 一種 均勻 之問 ,接 之處, 介面材 與器件 料缺乏 ’其於 亦受到 熱介面 厚度薄 之熱介 題,本 觸熱阻 曰 另一目的係提供此 發明之 子材料 材料形 奈米碳 面材料 兩彎曲 發明之 ,其包 列浸潤 ,生成 目的,本發 及複數奈米 成有一第一 管兩端開口 的第一表面 Γ!,主模方式製得埶介 枓之導埶係奴± 向小型化方Ϊ ,但該 柔韌性;复發展之趨勢 美辦八# 一 —,奈米碳管 $塑刀a之岣勻性較難確 来雙管縱向導熱 材ΐ之熱傳導係數。面材料實t:要接觸熱阻 f明之目的於於提供一種 、,柔韌性好,導熱均勻種熱介面材料之製造方 ^提供一種熱介面材料, 兔管分佈於該高分子材料 表面及相對於第一表面之 ’於該高分子材料中均勻 向第二表面延伸並分別伸 另一 括以 於液 分佈 本發明提供一種熱介面材 下步驟·挺乂 叔供一奈米碳管陣列; ^二子體系;使液相高分子體 —1^5之高分子複合材料;Page 8 4613. It is an important direction to study how to use carbon nanotubes for thermal interface materials and to give full play to their excellent thermal conductivity. U.S. Patent No. 6,407,9 22 discloses a heat transfer utilizing carbon nanotubes. The interface material is obtained by incorporating a carbon nanotube into a silver matrix to form a thermal interface material by a main mold method. The two thermal conduction materials of the thermal interface material 2 = the area is different, and the area of the surface contacting the heat sink is larger than the area of the two surfaces, which is beneficial to the heat dissipation of the heat sink. However, the party, the = 1246879 case number five, the invention description (3) the thickness of the thermal interface material obtained is incompatible with the body of the thermal interface material, and the advantage of the heat transfer in the matrix material is not sufficient. This small, soft blade is good [content] In order to solve the problem of the first thin and thermally conductive thermal interface material. In order to achieve the inclusion of a high score; the second surface of the thermal interface, the distribution and the formation of the heat-extracting surfaces to convert the nanocarbon tube array into a solid phase ^U〇6〇 £ The material is large, although the product is not used in the order of the heat transfer, the 'providing' thermal conductivity before the technical coefficient is insufficient to increase the heat, the uniformity of the surface material affects a uniform question, the connection, the interface material The lack of a device material, which is also subject to the thinness of the thickness of the thermal interface, is another object of providing the two-bending invention of the sub-material material of the invention, which is infiltrated and generated. The purpose is that the first and the plurality of nanometers have a first surface opening at both ends of the first tube, and the main mode is used to make the guiding system of the sputum system to the miniaturized square, but the flexibility; the complex development The trend of the United States to do eight # one, the carbon nanotubes of the plastic knife a uniformity is more difficult to determine the heat transfer coefficient of the double-tube longitudinal thermal conductivity. The surface material is t: the purpose of contact with the thermal resistance is to provide a thermal interface material with good flexibility and uniformity of thermal conductivity. A thermal interface material is provided, and the rabbit tube is distributed on the surface of the polymer material and relative to The first surface is uniformly extended to the second surface in the polymer material and extends separately to form a liquid distribution. The present invention provides a thermal interface material under the step of the first embodiment of the carbon nanotube array; a polymer composite material that makes a liquid phase polymer - 1 ^ 5;
第9頁 1246879 於·y p _案號 93110604_年月日_ί±ί-_ 五、發明說明(4) 於奈米碳管陣列預定高度,並沿垂直奈米碳管陣列之轴向 方向切割該高分子複合材料,去除奈米碳管陣列頂端之高 分子材料並使得奈米碳管尖端開口;按照預定厚度切割上 述高分子複合材料,形成熱介面材料。Page 9 1246879 Yu·yp _ Case No. 93110604_年月日日_ί±ί-_ V. Description of invention (4) At a predetermined height of the carbon nanotube array, and cut along the axial direction of the vertical carbon nanotube array The polymer composite material removes the polymer material at the top of the carbon nanotube array and opens the tip of the carbon nanotube; the polymer composite material is cut according to a predetermined thickness to form a thermal interface material.
與習知技術之熱介面材料相較,本發明基於奈米碳管 陣列導熱之熱介面材料具以下優點:其一,本發明製得之 熱介面材料,因奈米碳管陣列具有均勻、超順、定向排列 之優點,該熱介面材料之每一根奈米碳管均於垂直熱介面 材料方向形成導熱通道,使得奈米碳管.之縱向導熱特性得 到最大限度之利用,因而可得到導熱係數高且導熱一致均 勻之熱介面材料;其二,利用本方法製得之熱介面材料, 不受奈米碳管陣列之生長高度之限,可通過切割之方法製 得厚度極薄之熱介面材料,一方面可提高熱介面材料之導 熱效果,另一方面,亦可增加熱介面材料之柔韋刃性,並降 低熱介面材料之體積及重量,有利於電子器件向小型化方 向發展之需要;其三,本發明分佈於熱介面材料中之奈米 碳管皆兩端開口,且貫穿整個熱介面材料並露出兩末端, 該兩末端形成有彎曲基本平行於熱介面材料之表面,於應 用時,該奈米碳管末端之彎曲部分能增大熱介面材料與熱 源或散熱裝置之直接接觸面積,有利於更好發揮奈米碳管 之導熱特性。 【實施方式】 下面將結合附圖及具體實施例對本發明進行詳細說 明。 請參閱第一圖及第二圖,首先於一基底11上均勻形成Compared with the thermal interface material of the prior art, the thermal interface material based on the thermal conductivity of the carbon nanotube array has the following advantages: First, the thermal interface material prepared by the invention has a uniform and super-inorganic carbon nanotube array. The advantages of the cis-aligning and aligning arrangement, each of the carbon nanotubes of the thermal interface material forms a heat-conducting channel in the direction of the vertical thermal interface material, so that the longitudinal heat conduction characteristics of the carbon nanotubes are utilized to the utmost extent, thereby obtaining heat conduction. The thermal interface material with high coefficient and uniform heat conduction; secondly, the thermal interface material prepared by the method is not limited by the growth height of the carbon nanotube array, and the thin interface can be obtained by cutting. The material can improve the thermal conductivity of the thermal interface material on the one hand, and increase the softness of the thermal interface material on the other hand, and reduce the volume and weight of the thermal interface material, which is beneficial to the development of electronic devices in the direction of miniaturization. Thirdly, the carbon nanotubes distributed in the thermal interface material of the present invention are open at both ends, and extend through the entire thermal interface material and expose both ends, the two ends The curved portion is substantially parallel to the surface of the thermal interface material. When applied, the curved portion at the end of the carbon nanotube can increase the direct contact area between the thermal interface material and the heat source or the heat sink, thereby facilitating better use of the carbon nanotubes. Thermal conductivity. [Embodiment] The present invention will be described in detail below with reference to the drawings and specific embodiments. Please refer to the first figure and the second figure, firstly forming uniformly on a substrate 11.
第10頁 案號 93110604 1246879 月 修正 曰 五、發明說明(5) 一層催化劑薄膜1 2,該催化劑薄膜丨2之形成方法可選自熱 沈積、電子束沈積或濺射法。基底丨丨之材料可用破璃、石 英、矽或氧化鋁。本實施例採用多孔矽,其表面有一層多 孔層,孔之直徑極小,一般小於3奈米。催化劑薄膜丨2之 材料選用鐵’也可選用其他材料,如氮化鎵、鈷、鎳及i 合金材料等。 〃 氧化催化劑薄膜1 2,形成催化劑顆粒(圖未示),再將 分佈有催化劑顆粒之基底11放入反應爐中(圖未示),於 700〜1000攝氏度下,通入碳源氣,生長出奈米碳管陣列, 其中碳源氣可為乙炔、乙烯等氣體,奈米碳管陣列之高度 可通過控制生長時間來控制。有關奈米碳管陣列2 2生長之 方法已較為成熟,具體可參閱文獻Science, 1 9 99,νο1· 283,ρ· 512-414 與文獻:LAm.Chem.soc,2〇〇1,ν〇ι· 123,ρ· 1 1 5 02- 1 1 503,此外美國專利第6,350,488號也公 開了一種生長大面積奈米碳管陣列之方法。 請參閱第三圖,將熔融態高分子32裝進一容器30中, 將已生長好之定向排列之奈米碳管陣列2 2連同基底丨丨一起 次到該熔融態高分子3 2中,直至熔融態高分子3 2完全浸潤 奈米碳管陣列2 2,熔融態高分子3 2完全浸潤之時間同奈米 碳管陣列22的高度、密度以及整個奈米碳管陣列22之面積 相關。為使熔融態高分子3 2能完全浸潤奈米碳管陣列2 2, 該溶融態高分子32之粘度在20OcPs以下。本發明熔融態高 分子32還可用高分子溶液或聚合物單體溶液替代,本實施 例採用之溶融態高分子3 2為溶融態石壤材料。 請參閱第四圖與第五圖,將被熔融態高分子32完全浸Page 10 Case No. 93110604 1246879 Month Amendment 曰 V. Description of Invention (5) A layer of catalyst film 12, which can be formed by thermal deposition, electron beam deposition or sputtering. The material of the substrate can be made of glass, quartz, enamel or alumina. This embodiment employs a porous crucible having a porous layer on its surface, and the diameter of the pores is extremely small, generally less than 3 nm. The material of the catalyst film 丨2 may be selected from other materials such as gallium nitride, cobalt, nickel and i alloy materials.氧化 Oxidation catalyst film 12, forming catalyst particles (not shown), and then placing the substrate 11 on which the catalyst particles are distributed in a reaction furnace (not shown), and introducing carbon source gas at 700 to 1000 degrees Celsius to grow A carbon nanotube array, wherein the carbon source gas can be a gas such as acetylene or ethylene, and the height of the carbon nanotube array can be controlled by controlling the growth time. The method for the growth of the carbon nanotube array 2 2 has been relatively mature, and can be found in the literature Science, 1 9 99, νο1·283, ρ· 512-414 and the literature: LAm.Chem.soc, 2〇〇1, ν〇 ι· 123, ρ· 1 1 5 02- 1 1 503, and a method of growing a large-area carbon nanotube array is also disclosed in U.S. Patent No. 6,350,488. Referring to the third figure, the molten polymer 32 is packed into a container 30, and the aligned aligned carbon nanotube array 2 2 is simultaneously introduced into the molten polymer 3 2 together with the substrate. Until the molten state polymer 3 2 completely infiltrate the carbon nanotube array 2 2 , the time at which the molten polymer 3 2 is completely wetted is related to the height and density of the carbon nanotube array 22 and the area of the entire nanotube array 22 . In order to completely infiltrate the carbon nanotube array 2 2 in the molten state polymer 3 2, the viscosity of the molten polymer 32 is 20 or less. The molten state polymer 32 of the present invention can also be replaced by a polymer solution or a polymer monomer solution. The molten polymer 3 2 used in this embodiment is a molten rocky soil material. Please refer to the fourth and fifth figures to completely dip the molten polymer 32.
1246879 94)2¾ -----案號 93110604 年月曰________ 五、發明說明(β) 潤之奈米碳管陣列2 2連同基底11 一起從容器3 0中取出,冷 卻使該熔融態高分子3 2固化,形成高分子材料3 4。然後於 奈米碳管陣列2 2預定高度,用切片機(圖未示)將該高分子 材料3 4沿垂直於奈米碳管陣列2 2之軸向方向進行切割,形 成熱介面材料40,其中,於切割前還可進一步將固化後之 高分子材料3 4從基底11上揭下再進行切割,形成熱介面材 料40。 本發明之熱介面材料40之製造方法中也可以先冷卻固 化該溶融態高分子32,再將固化後之高·.分子材料34連同基 底11 一起從容器30中取出,然後直接用切片機於奈米碳^ 陣列22之軸向方向切割該高分子材料34形成熱介面材 40 〇 割高分子材料34形 據奈米碳管陣列2 2 高分子材料34沿垂 ’除去奈米碳管陣 奈米碳管之尖端開 沿同一方向進行切 "面材料4 0中之奈 材料40並露出兩末 該彎曲部分基本平 該奈米碳管末端24 熱裝置之接觸不良 奈米碳管優良之導 為1〜1000微米,本 之生長 直於奈 列22上 口;然 割,即 米碳管 端2 4, 行於熱 之彎曲 ’增大 熱性能 高度將分 米碳管陣 方多餘之 後按照熱 得到所需 兩端開 該兩末端 介面材料 部分能避 直接接觸 。本發明 實施例熱介面材1246879 94) 23⁄4 ----- Case No. 93110604 曰 ________ V. OBJECT DESCRIPTION (β) Runner carbon nanotube array 2 2 is taken out from vessel 30 together with substrate 11 and cooled to make the molten state high The molecule 3 2 is solidified to form a polymer material 34. Then, at a predetermined height of the carbon nanotube array 2 2, the polymer material 34 is cut perpendicular to the axial direction of the carbon nanotube array 2 2 by a microtome (not shown) to form a thermal interface material 40. The polymer material 34 after curing may be further removed from the substrate 11 and then cut to form a thermal interface material 40. In the method for manufacturing the thermal interface material 40 of the present invention, the molten polymer 32 may be cooled and solidified, and the cured molecular material 34 is taken out from the container 30 together with the substrate 11 and then directly used by a microtome. The carbon nanotube array 22 is axially cut to form the thermal interface material 40. The cast polymer material 34 is shaped according to the carbon nanotube array 2 2 the polymer material 34 is removed along the vertical 'carbon nanotube array nanometer The tip end of the carbon tube is cut in the same direction. The material 40 in the surface material 40 is exposed and the curved portion is substantially flat. The carbon nanotube end 24 is in contact with the poor thermal conductivity of the carbon nanotube. 1~1000 microns, the growth of this is straight to the upper mouth of Nai Li 22; then cut, that is, the end of the carbon tube end 2 4, in the bending of the heat 'increasing the thermal performance height will be obtained after the carbon nanotubes are redundant The two ends of the interface material are required to avoid direct contact. Thermal medium surface material of the embodiment of the invention
第12頁 本發明用切片機切 之具體方法為:首先根 佈有奈米碳管陣列2 2之 列2 2軸向方向進行切割 高分子材料34,同時使 介面材料40之所需厚度 之熱介面材料40,該熱 口,且貫穿整個熱介面 24分別形成有一彎曲, 40之表面。於應用時, 免奈米碳管與熱源或散 面積,從而更好地發揮 熱介面材料40之厚度可 1246879 ___案號93110604___年月日 佟正· .· 五、發明說明(7) 料4 0之厚度為2 0微米。通過控制切片機進行切割的位置, 熱介面材料4 0之厚度可根據需求由切片時直接控制,方法 簡單’且容易控制。另,根據切片機切割方向之不同,奈 米碳管末端2 4可形成有不同方向之彎曲,然大部分都將基 本平行於熱介面材料40之表面。 本發明之熱介面材料4 〇,奈米碳管陣列2 2經高分子材 料34固結形成一體,使得奈米碳管陣列22於高分子材料34 中具有分佈均勻、垂直排列之特點,於垂直薄膜方向形成 導熱通道,所形成之熱介面材料4〇具有、.導熱係數高、導熱 均勻之特點。 利用本方法製得之熱介面材料4〇中,分布於熱介面材 料4 0中之奈米碳管陣列2 2之形態基本不變,即奈米碳管陣 列2 2之中奈米碳管之間距未變,且奈米碳管陣列2 2沒有聚 集成束,保持原有定向排列之狀態,並且此熱介面材料4〇 具有良好柔韌性。 丄於奈米碳管之兩末端24均延伸出熱介面材料4〇 彎曲平行於熱介面材料40之表面,其在應用時 二也發揮二;源或散熱裝置之接觸面積,更 手不水石反官之優良導熱性能。 製;之奈米碳管陣列熱介面材 _)、功率\之曰¥體熱性可廣泛應用於包括中央處理器 ^ ^ t Λ;80 / Λ ^ ^/,J aBa ^ (VGA) ^ ^ 熱器60之間,*提# :二面材料40置於電子器件80與散 接觸,熱介面材料4〇之第# ί ”.、 間—優良熱 I·· --之第—表面42與電子器件80之表面The specific method of cutting the slicer according to the present invention is as follows: firstly, the carbon material array 34 is cut in the axial direction of the carbon nanotube array 2 2, and the heat of the desired thickness of the interface material 40 is made at the same time. The interface material 40, the hot port, and the surface of the bend 40 are formed through the entire thermal interface 24. In application, the carbon nanotubes and the heat source or the scattered area, so as to better play the thickness of the thermal interface material 40 can be 1246879 ___ case number 93110604___年月日日正··· 5, invention description (7) The thickness of 40 is 20 microns. By controlling the position at which the slicer performs the cutting, the thickness of the thermal interface material 40 can be directly controlled by the slice as required, and the method is simple & easy to control. Further, depending on the cutting direction of the microtome, the carbon nanotube tips 24 may be formed to have different directions of curvature, and most of them will be substantially parallel to the surface of the thermal interface material 40. The thermal interface material 4 〇 of the present invention, the carbon nanotube array 2 2 is consolidated by the polymer material 34, so that the carbon nanotube array 22 has the characteristics of uniform distribution and vertical alignment in the polymer material 34, and is vertical. The direction of the film forms a heat conduction channel, and the formed thermal interface material 4 has the characteristics of high thermal conductivity and uniform heat conduction. In the thermal interface material prepared by the method, the morphology of the carbon nanotube array 2 2 distributed in the thermal interface material 40 is substantially unchanged, that is, the carbon nanotube array in the carbon nanotube array 2 2 The pitch is unchanged, and the carbon nanotube array 2 2 is not gathered into a bundle, maintaining the original aligned state, and the thermal interface material 4 has good flexibility. The two ends 24 of the carbon nanotubes extend out of the thermal interface material 4〇 and are parallel to the surface of the thermal interface material 40, which also exerts two in the application; the contact area of the source or the heat sink is more resistant to water and stone. Excellent thermal conductivity of the official. The carbon nanotube array thermal interface material _), power \ 曰 体 body heat can be widely used to include the central processing unit ^ ^ t Λ; 80 / Λ ^ ^ /, JaBa ^ (VGA) ^ ^ heat Between the devices 60, *提#: the two-sided material 40 is placed in contact with the electronic device 80, the thermal interface material 4 〇 , , , , , , , , , , , , , , , , , , , , , , , , , , , , Surface of device 80
第13頁 1246879 ___93110604 年月曰 修正 五、發明說明(8) (未標示)接觸,與第一表面42相對應之熱介面材料4〇之第 二表面44與散熱器60之底面(未標示)接觸。由於本發明製 得之奈米碳管陣列熱介面材料4 〇可將其厚度控制於微米 級’具有較好之柔韌性,因而,即使於電子器件之表面參 差不齊之情況下,本發明之熱介面材料也能提供電子器件 80與散熱器60之間一良好之熱接觸。另,由於本發明熱介 面材料4 0中之奈米碳管皆兩端開口,且沿熱介面材料之第 一表面42向第二表面44延伸並分別伸出該兩表面42,44形 成兩彎曲基本平行於熱介面材料4〇之策一表面42和第二表Page 13 1246879 ___93110604 曰 曰 Revision 5, Invention Description (8) (not shown) contact, the second surface 44 of the thermal interface material 4 corresponding to the first surface 42 and the bottom surface of the heat sink 60 (not labeled) contact. Since the carbon nanotube array thermal interface material 4 〇 prepared by the present invention can control its thickness to a micron level, it has better flexibility, and thus, even in the case where the surface of the electronic device is jagged, the present invention The thermal interface material can also provide a good thermal contact between the electronic device 80 and the heat sink 60. In addition, since the carbon nanotubes in the thermal interface material 40 of the present invention are both open at both ends, and extend along the first surface 42 of the thermal interface material toward the second surface 44 and respectively protrude from the two surfaces 42, 44 form two bends. a surface 42 and a second table substantially parallel to the thermal interface material
面44。因而,能更好得保證奈米碳管與電子器件8〇及散熱 器6 0之直接接觸,使得奈米碳管之縱向導熱特性得到最大 限度之利用,熱介面材料4〇具有導熱係數高且導熱一致均 勻之特點。 絲上所述,本發明符合發明專利之要件,爰依法提出 專利申請。惟,以上所述者僅為本發明之較佳實施例,舉 凡熟悉本案技藝之人士,於援依本案發明精 等效 修飾或變化,皆應包含於以下之申請專利範圍内。Face 44. Therefore, it is better to ensure the direct contact between the carbon nanotubes and the electronic device 8〇 and the heat sink 60, so that the longitudinal thermal conductivity of the carbon nanotubes is utilized to the utmost extent, and the thermal interface material 4〇 has a high thermal conductivity and The characteristics of uniform heat conduction. As stated on the silk, the invention complies with the requirements of the invention patent and submits a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and those skilled in the art, which are skilled in the art, are equivalently modified or changed in the present invention, and are included in the following claims.
1246879 _案號93110604_年月日__ 圖式簡單說明 【圖式簡單說明】 第一圖係本發明中形成有催化劑薄膜之基底之示意 圖。 第二圖係第一圖所示基底上生長有定向排列之奈米碳 管陣列之示意圖。 第三圖係第二圖所示之奈米碳管陣列連同基底於熔融 態高分子中浸泡之示意圖。 第四圖係本發明中浸有熔融態高分子之奈米碳管陣列 之固化之示意圖。 、-.1246879 _ Case No. 93110604_年月日日__ BRIEF DESCRIPTION OF THE DRAWINGS [Brief Description] The first figure is a schematic view of a substrate on which a catalyst film is formed in the present invention. The second figure is a schematic diagram of an array of aligned carbon nanotubes grown on a substrate as shown in the first figure. The third figure is a schematic diagram of the carbon nanotube array shown in the second figure together with the substrate soaked in the molten polymer. The fourth drawing is a schematic view showing the solidification of the carbon nanotube array in which the molten polymer is impregnated in the present invention. , -.
第五圖係本發明中含奈米碳管陣列之熱介面材料示意 圖。 第六圖係本發明熱介面材料之應用示意圖。 【主要元件符號說明】The fifth drawing is a schematic view of a thermal interface material comprising a carbon nanotube array in the present invention. The sixth drawing is a schematic diagram of the application of the thermal interface material of the present invention. [Main component symbol description]
基底 11 催化劑層 12 奈米碳管陣列 22 末端 24 容器 30 熔融態高分子 32 高分子材料 34 熱介面材料 40 第一表面 42 第二表面 44 散熱器 60 電子器件 80Substrate 11 Catalyst layer 12 Carbon nanotube array 22 End 24 Container 30 Molten polymer 32 Polymer material 34 Thermal interface material 40 First surface 42 Second surface 44 Heat sink 60 Electronics 80
第15頁Page 15
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