TW200536462A - Thermal interface material and methode for making same - Google Patents
Thermal interface material and methode for making same Download PDFInfo
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- TW200536462A TW200536462A TW93110604A TW93110604A TW200536462A TW 200536462 A TW200536462 A TW 200536462A TW 93110604 A TW93110604 A TW 93110604A TW 93110604 A TW93110604 A TW 93110604A TW 200536462 A TW200536462 A TW 200536462A
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- 239000000463 material Substances 0.000 title claims abstract description 130
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 45
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
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- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
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- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
200536462 五、發明說明U) 【發明所屬之技術領域】 本發明係關於一種熱介 種利用奈米碳管導熱之熱介 【先前技術】 近年來,隨著半導體器 體器件之集成化程度越來越 小,其對散熱之需求越來越 問題。為滿足該需要,風扇 熱等各種散熱方式被廣泛運 因散熱器與半導體集成器件 接觸面積不到2 %,未有一個 響半導體器件向散熱器傳遞 半導體器件之間增加一具較 加介面之接觸程度實為必要 傳統熱介面材料係將導 基體以形成複合材料,如石 鋁、銀或其他金屬等。此種 體之性質。其中以油脂、相 使用時為液態,能與熱源表 矽膠與橡膠為載體之複合材 料一普遍缺陷係整個材質導 這已經越來越不能適應半導 需求,而增加銀膠基體之導 間儘量相互接觸以增加整個 面材料及其製造方法,尤指— 面材料及其製造方法。 件集成工藝之快速發展,半導 高。惟,器件體積變得越來越 南 已成為一個越來越重要之 散熱、水冷輔助散熱及熱管散 用’並取得一定散熱效果,但 之接觸介面不平整,一般相互 理想之接觸介面,從根本上影 ,量之效果,故,於散熱器與 南熱傳遞係數之介面材料以增 〇 熱係數較高之顆粒分散於銀膠 墨、氮化爛、氧化石夕、氧化 材料之導熱性能取決於銀膠基^ I材料為基體之複合材料因其 面浸潤,故接觸熱阻較小,而 料接觸熱阻相對較大。該類材 熱係數較小,典型值為lw/mK, 體集成化程度之提高對散熱之 熱顆粒含量使得顆粒與顆粒之 複合材料之導熱係數,如某些200536462 V. Description of the invention U) [Technical field to which the invention belongs] The present invention relates to a thermal medium that uses nano-carbon tubes to conduct heat. [Previous technology] In recent years, with the increasing integration of semiconductor body devices The smaller it becomes, the more demanding it becomes for heat dissipation. In order to meet this need, various heat dissipation methods such as fan heat are widely used because the contact area between the heat sink and the semiconductor integrated device is less than 2%. No semiconductor device has passed to the heat sink to add a more interface contact between the semiconductor devices. The degree is necessary. Traditional thermal interface materials are conductive substrates to form composite materials, such as stone aluminum, silver or other metals. The nature of this body. Among them, the grease and the phase are liquid when used, and can be combined with the heat source surface silicone rubber and rubber as a carrier. A common defect is that the entire material guide has become more and more unsuitable for semiconducting requirements, and the increase of the silver glue matrix as much as possible Contact to increase the entire surface material and its manufacturing method, especially-surface material and its manufacturing method. The rapid development of the integrated technology of components, the semiconducting height. However, the volume of the device has become more and more important, and it has become an increasingly important heat dissipation, water cooling auxiliary heat dissipation, and heat pipe dissipation. It has achieved a certain heat dissipation effect, but the contact interfaces are uneven, and generally the ideal contact interfaces with each other, fundamentally Therefore, the heat transfer performance of the interface material between the heat sink and the south heat transfer coefficient is dispersed in the silver ink, nitrided oxide, stone oxide, and the thermal conductivity of the oxide material. The composite material with gum base ^ I as the matrix has a low contact thermal resistance because of its surface wetting, while the contact thermal resistance is relatively large. The thermal coefficient of this kind of material is small, the typical value is lw / mK. The increase of the volume integration improves the heat dissipation content of the heat particles, which makes the thermal conductivity of the composite materials of particles and particles, such as some
200536462 五、發明說明(2) 特殊之介面材料因此可達到4-8W/mK,惟,銀膠基體之導熱 顆粒含量增加至一定程度時,會使銀膠基體失去原本之性 能,如油脂會變硬,從而浸潤效果變差,橡膠亦會變得車交 硬,從而失去應有之柔韌性,這都將使熱介面材料性能大 大降低。200536462 V. Description of the invention (2) The special interface material can reach 4-8W / mK. However, when the content of the thermally conductive particles of the silver gel matrix is increased to a certain level, the silver gel matrix will lose its original properties, such as the oil will change. Hard, so that the wetting effect becomes worse, the rubber will also become hard, and lose its flexibility, which will greatly reduce the performance of the thermal interface material.
近來有一種熱介面材料,係將定向排列之導熱係數約 為1 100 W/mK之碳纖維一端或整體用聚合物固定,從而於熱 介面材料之垂直方向形成定向排列之碳纖維陣列,以使每 一碳纖維均可形成一導熱通道,該方式可有效提高熱介面 材料之導熱係數,達到5 0-9 0 W/mK。惟,該類材料一個缺 點係厚度必須大於4〇微米,而整個熱介面材料之導熱係、數 與薄膜之厚度成反比,故當其熱阻降低至一定程度,進_ 步降低之空間相當有限。Recently, there is a thermal interface material. One end or the whole of the carbon fiber with a thermal conductivity of about 1 100 W / mK is aligned with a polymer to form an aligned carbon fiber array in the vertical direction of the thermal interface material. Carbon fiber can form a heat conduction channel. This method can effectively improve the thermal conductivity of the thermal interface material, reaching 50 to 90 W / mK. However, a disadvantage of this type of material is that the thickness must be greater than 40 microns, and the thermal conductivity of the entire thermal interface material is inversely proportional to the thickness of the film. Therefore, when its thermal resistance is reduced to a certain extent, the space for further reduction is limited. .
為改善熱介面材料之性能,提高其熱傳導係數,各種 材料被廣泛試驗。Savas Berber等人於2000年於美國物理 學會上發表一篇名為’’Unusually High Thermal Conductivity of Carbon Nanotubesπ 之文章指出,ΠΖ"形“ (1〇, 10)奈米碳管於室溫下導熱係數可達6 6 0 0 W/mK,具體 内容可參閱文獻 Phys. Rev. Lett( 2 0 0 0 ),Vol. 84,P. 4613。研究如何將奈米碳管用於熱介面材料並充分發揮其 優良之導熱性成為提高熱介面材料性能之一個重要方向。 美國專利第6, 40 7, 922號揭示一種利用奈米碳管導熱之 熱介面材料,其係將奈米碳管摻到銀膠基體結成一體,通 過注模方式製得熱介面材料。該熱介面材料之兩導熱表面In order to improve the performance of thermal interface materials and their thermal conductivity, various materials have been extensively tested. A paper entitled "Unusually High Thermal Conductivity of Carbon Nanotubesπ" published by the American Physical Society in 2000 by Savas Berber et al. States that the thermal conductivity of carbon nanotubes at room temperature (Π, 10, 10) It can reach 6 6 0 W / mK, the specific content can refer to the literature Phys. Rev. Lett (2 0 0 0), Vol. 84, P. 4613. Study how to use nano carbon tubes for thermal interface materials and make full use of them. Excellent thermal conductivity has become an important direction to improve the performance of thermal interface materials. US Patent No. 6, 40 7, 922 discloses a thermal interface material that uses nano carbon tubes to conduct heat. The thermal interface material is made into one body by injection molding. The two thermally conductive surfaces of the thermal interface material
第7頁 200536462 五、發明說明13)Page 7 200536462 V. Description of Invention 13)
之面積不等,其中與散熱器接觸一面之面積大於與熱源接 觸一面之面積,這樣可有利於散熱器散熱。惟,該方法製 得之熱介面材料有不足之處,其一,注模方式製得熱介面 材料厚度較大,雖該熱介面材料之導熱係數較高,但該熱 介面材料體積之增加,與器件向小型化方向發展之趨勢不 相適應^且該熱介面材料缺乏柔初性,其"一,奈米$反官於 基體材料中未有序排列,其於基體分佈之均勻性較難確 保,因而熱傳導之均勻性亦受到影響,奈米碳管縱向導熱 之優勢未充分利用,影響熱介面材料之熱傳導係數。 有鑒於此,提供一種厚度薄、導熱係數大,.接觸熱阻 小,柔韌性好,導熱均勻之熱介面材料實為必要。 【内容】 為解決先前技術之問題,本發明之目的於於提供一種 厚度薄、導熱係數大,接觸熱阻小,柔韌性好,導熱均勻 之熱介面材料。 本發明之另一目的係提供此種熱介面材料之製造方 法。The area varies, in which the area on the side in contact with the heat sink is larger than the area on the side in contact with the heat source, which can help the heat sink to dissipate heat. However, the thermal interface material prepared by this method has disadvantages. First, the thickness of the thermal interface material obtained by injection molding is relatively large. Although the thermal interface material has a high thermal conductivity, the volume of the thermal interface material increases. It is not compatible with the development trend of devices toward miniaturization ^ and the thermal interface material lacks flexibility. The first is that nanometers are not ordered in the matrix material, and the uniformity of the distribution in the matrix is relatively It is difficult to ensure, so the uniformity of heat conduction is also affected, and the advantages of longitudinal thermal conductivity of nano carbon tubes are not fully utilized, affecting the thermal conductivity of the thermal interface material. In view of this, it is necessary to provide a thermal interface material with a thin thickness, a large thermal conductivity, a small contact thermal resistance, good flexibility, and uniform thermal conductivity. [Content] In order to solve the problems of the prior art, an object of the present invention is to provide a thermal interface material with a thin thickness, a large thermal conductivity, a small contact thermal resistance, good flexibility, and uniform thermal conductivity. Another object of the present invention is to provide a method for manufacturing such a thermal interface material.
為實現本發明之目的,本發明提供一種熱介面材料, 其包括一高分子材料及複數奈米碳管分佈於該高分子材料 中;該熱介面材料形成有一第一表面及相對於第一表面之 第二表面,該奈米碳管兩端開口 ,於該高分子材料中均勻 分佈且沿熱介面材料的第一表面向第二表面延伸並分別伸 出兩表面形成兩彎曲。 為實現本發明之另一目的,本發明提供一種熱介面材In order to achieve the purpose of the present invention, the present invention provides a thermal interface material, which includes a polymer material and a plurality of nano carbon tubes distributed in the polymer material; the thermal interface material is formed with a first surface and is opposite to the first surface On the second surface, two ends of the nano-carbon tube are opened, and are evenly distributed in the polymer material and extend along the first surface of the thermal interface material toward the second surface and protrude from both surfaces to form two bends. In order to achieve another object of the present invention, the present invention provides a thermal interface material
第8頁 200536462 五、發明說明(4) 料之製造方法,其包括以下步驟:提供一奈米碳管陣列; 將奈米碳管陣列浸潤於液相高分子體系;使液相高分子體 系轉化為固相,生成分佈有奈米碳管之高分子複合材料; 於奈米碳管陣列預定高度,並沿垂直奈米碳管陣列之軸向 方向切割該高分子複合材料,去除奈米碳管陣列頂端之高 分子材料並使得奈米碳管尖端開口;按照預定厚度切割上 述高分子複合材料,形成熱介面材料。 與習知技術之熱介面材料相較,本發明基於奈米碳管 陣列導熱之熱介面材料具以下優點:其一,本發明製得之 熱介面材料,因奈米碳管陣列具有均勻、超順、.定向排列 之優點,該熱介面材料之每一根奈米碳管均於垂直熱介面 材料方向形成導熱通道,使得奈米碳管之縱向導熱特性得 到最大限度之利用,因而可得到導熱係數高且導熱一致均 勻之熱介面材料;其二,利用本方法製得之熱介面材料, 不受奈米碳管陣列之生長高度之限,可通過切割之方法製 得厚度極薄之熱介面材料,一方面可提高熱介面材料之導 熱效果,另一方面,亦可增加熱介面材料之柔韌性,並降 低熱介面材料之體積及重量,有利於電子器件向小型化方 向發展之需要;其三,本發明分佈於熱介面材料中之奈米 碳管皆兩端開口 ,且貫穿整個熱介面材料並露出兩末端, 該兩末端形成有彎曲基本平行於熱介面材料之表面,於應 用時,該奈米碳管末端之彎曲部分能增大熱介面材料與熱 源或散熱裝置之直接接觸面積,有利於更好發揮奈米碳管 之導熱特性。Page 8 200536462 V. Description of the invention (4) The method for manufacturing materials includes the following steps: providing a nano carbon tube array; immersing the nano carbon tube array in a liquid polymer system; and transforming the liquid polymer system For the solid phase, a polymer composite material with carbon nanotubes distributed is generated; the polymer composite material is cut at a predetermined height in the carbon nanotube array, and the polymer composite material is cut in the axial direction of the vertical carbon nanotube array to remove the carbon nanotube The polymer material at the top of the array makes the nano carbon tube tip open; the polymer composite material is cut according to a predetermined thickness to form a thermal interface material. Compared with the conventional thermal interface material, the thermal interface material based on the nano-carbon tube array of the present invention has the following advantages: First, the thermal interface material prepared by the present invention has a uniform, The advantage of directional arrangement is that each nano carbon tube of the thermal interface material forms a heat conduction channel in the direction of the vertical thermal interface material, so that the longitudinal thermal conductivity of the nano carbon tube can be used to the maximum extent, and thus the thermal conductivity Thermal interface material with high coefficient and uniform and uniform thermal conductivity; Second, the thermal interface material prepared by this method is not limited by the growth height of the nano carbon tube array, and the thermal interface material can be made very thin by cutting. Materials, on the one hand, can improve the thermal conductivity of thermal interface materials, on the other hand, they can increase the flexibility of thermal interface materials, and reduce the volume and weight of thermal interface materials, which is conducive to the development of electronic devices in the direction of miniaturization; Third, the nano carbon tubes distributed in the thermal interface material of the present invention are open at both ends, and penetrate the entire thermal interface material and expose two ends. The two end shapes are There is a curve that is substantially parallel to the surface of the thermal interface material. In application, the curved portion at the end of the nano carbon tube can increase the direct contact area between the thermal interface material and the heat source or heat dissipation device, which is conducive to better use of the nano carbon tube. Thermal conductivity.
第9頁 200536462 五、發明說明(5) 【實施方式】 下面將結合附圖及具體實施例對本發明進行詳細説 明。 請參閱第一圖及第二圖,首先於一基底Η上均勻形成 一層催化劑薄膜1 2,該催化劑薄膜1 2之形成方法可選自熱 沈積、電子束沈積或濺射法。基底11之材料可用玻璃、石 英、石夕或氧化鋁。本實施例採用多孔矽,其表面有一層多 孔層’孔之直徑極小,一般小於3奈米。催化劑薄膜丨2之讨 料選用鐵,也可選用其他材料,如氮化鎵、鈷、鎳及其合 金材料等。 氧化催化劑薄膜1 2,形成催化劑顆粒(圖未示),與將 分佈有催化劑顆粒之基底η放入反應爐中(圖未示),於7〇〇 〜1 0 0 0攝氏度下,通入碳源氣,生長出奈米碳管陣列,其中 碳源氣可為乙炔、乙烯等氣體,奈米碳管陣列之高度町通 過控制生長時間來控制。有關奈米碳管陣列2 2生長之方法 已較為成熟’具體可參閱文獻Science, 1 9 9 9,ν〇ΐ· 283, Ρ. 512 —414 與文獻 J.Am.Chem.Soc,2 0 0 1,vol. 123,Ρ· ‘ 1 1 5 0 2- 1 1 5 0 3 ’此外美國專利第6, 3 5〇, 488號也公開了〆種 生長大面積奈米碳管陣列之方法。 清參閱第三圖,將熔融態高分子32裝進一容器30中, =已生長好,疋向排列之奈米碳管陣列2 2連同基底1丨一起 /叉到5亥溶融怨兩分子32中,直至溶融態高分子32完全浸潤 ^ f碳管陣列22,熔融態高分子32完全浸潤之時間同奈米 碳官陣列22的高度、密度以及整個奈米碳管陣列22之面積Page 9 200536462 V. Description of the invention (5) [Embodiment] The present invention will be described in detail below with reference to the drawings and specific embodiments. Referring to the first figure and the second figure, a catalyst film 12 is uniformly formed on a substrate first. The method for forming the catalyst film 12 may be selected from thermal deposition, electron beam deposition, or sputtering. The material of the substrate 11 may be glass, quartz, stone evening or alumina. In this embodiment, porous silicon is used. The surface has a multi-porous layer. The diameter of the pores is extremely small, generally less than 3 nm. The catalyst film 2 is selected from iron, and other materials such as gallium nitride, cobalt, nickel, and alloy materials can also be selected. The catalyst film 12 is oxidized to form catalyst particles (not shown), and the substrate η where the catalyst particles are distributed is placed in a reaction furnace (not shown), and carbon is passed in at a temperature of 700 to 1000 degrees Celsius. The source gas grows a carbon nanotube array. The carbon source gas can be acetylene, ethylene and other gases. The height of the carbon nanotube array is controlled by controlling the growth time. The method for the growth of nano-carbon tube array 2 2 is relatively mature. For details, please refer to Science, 199, ν〇ΐ · 283, P. 512-414 and J. Am. Chem. Soc, 2 0 0 1, vol. 123, P · '1 15 0 2-1 15 0 3' In addition, U.S. Patent No. 6,35,488 also discloses a method for growing a large area carbon nanotube array. Refer to the third figure, put the molten polymer 32 into a container 30, = the carbon nanotube array 2 2 has been grown, and it is aligned with the substrate 1 / fork to 5 to melt the two molecules 32 Until the molten polymer 32 completely wets the carbon nanotube array 22, and the molten polymer 32 completely wets the same time as the height and density of the carbon nanotube array 22 and the area of the carbon nanotube array 22
200536462 五、發明說明(6) 相關。為使炫融態南分子3 2能完全浸潤奈米碳管陣列2 2, 該炼融態高分子3 2之粘度在2 〇 〇 c P s以下。本發明熔融態高 分子3 2還可用高分子溶液或聚合物單體溶液替代,本實施 例採用之熔融態高分子32為熔融態石蠟材料。 明參閱第四圖與弟五圖,將被炼融病向分子3 2完全浸 潤之奈米碳管陣列2 2連同基底11 一起從容器3 0中取出,冷 卻使該熔融態高分子32固化,形成高分子材料34。然後於 奈米碳管陣列2 2預定高度,用切片機(圖未示)將該高分子 材料3 4沿垂直於奈米碳管陣列2 2之軸向方向進行切割,形 成熱介面材料4 0,其中,於切割前還可進一步將固化後之 高分子材料34從基底1 1上揭下再進行切割,形成熱介面材 料40。 本發明之熱介面材料4 0之製造方法中也可以先冷卻固 化該熔融態高分子32,再將固化後之高分子材料34連同基 底1 1 一起從容器3 0中取出,然後直接用切片機於奈米碳$ 陣列2 2之軸向方向切割該高分子材料3 4形成熱介面材料 4 0 ° 本發明用切片機切割高分子材料34形成熱介面材料4〇 之具體方法為:首先根據奈米碳管陣列2 2之生長高度將分 佈有奈米碳管陣列2 2之高分子材料3 4沿垂直於奈米碳管陣 列2 2軸向方向進行切割,除去奈米碳管陣列2 2上方多餘之 高分子材料34,同時使奈米碳管之尖端開口;然後按照熱 介面材料40之所需厚度沿同一方向進行切割,即得到所需 之熱介面材料4 〇,該熱介面材料4 〇中之奈米碳管兩端開200536462 V. Description of Invention (6) Related. In order to make the nano-molecular carbon 3 2 completely infiltrate the nano-carbon tube array 22, the viscosity of the molten polymer 32 is less than 2000 c Ps. The molten polymer 32 of the present invention may also be replaced with a polymer solution or a polymer monomer solution. The molten polymer 32 used in this embodiment is a molten paraffin material. Referring to the fourth and fifth figures, the nano carbon tube array 2 2 completely infiltrated by the melting disease to the molecule 3 2 is taken out of the container 30 together with the substrate 11, and the molten polymer 32 is solidified by cooling, Forming a polymer material 34. Then, at a predetermined height of the nano-carbon tube array 22, the polymer material 34 is cut with a slicer (not shown) in an axial direction perpendicular to the nano-carbon tube array 22 to form a thermal interface material 40. Among them, before curing, the cured polymer material 34 may be further peeled from the substrate 11 and then cut to form a thermal interface material 40. In the method for manufacturing the thermal interface material 40 of the present invention, the molten polymer 32 may be cooled and solidified first, and then the cured polymer material 34 is taken out of the container 30 together with the substrate 1 1, and then directly used a slicer. Cutting the polymer material 3 4 in the axial direction of the nano-carbon array 2 2 to form a thermal interface material 4 0 ° The present invention uses a microtome to cut the polymer material 34 to form the thermal interface material 40. The specific method is as follows: The growth height of the carbon nanotube array 2 2 The polymer material 3 4 with the carbon nanotube array 2 2 distributed along the axial direction perpendicular to the carbon nanotube array 2 2 is cut to remove the carbon nanotube array 2 2 above. Excess polymer material 34, at the same time, open the tip of the nano carbon tube; and then cut in the same direction according to the required thickness of the thermal interface material 40 to obtain the required thermal interface material 4 〇, the thermal interface material 4 〇 Nakano carbon tube open at both ends
200536462 五、發明說明( 口,且貫 2 4分別形 40之表面 免奈米碳 面積,從 熱介面材 料40之厚 熱介面材 /rA: 口口 間早’且 納米管末 本平行於 本發 料34固結 中具有分 導熱通道 均勻之特 利用 料40中之 列2 2之中 集成束, 具有良好 另, 並形成有 能有效地 穿整個 成有一 。於應 管與熱 而更好 料40之 度為20 料40之 容易控 端24可 熱介面 明之熱 形成一 佈均勻 ,所形 點。 本方法 奈米碳 奈米碳 保持原 柔韌性 由於碳 一彎曲 增加碳 熱介面 彎曲, 用時, 源或散 地發揮 厚度可 微米D 厚度可 制。另 形成有 材料40 介面材 體,使 、垂直 成之熱 材料4 0並露 該彎曲部分 該碳納米管 熱裝置之接 碳納米管優 為1〜1 0 0 0微 通過控制切 根據需求由 ,根據切片 不同方向之 之表面。 料40 ,奈米 得奈米碳管 排列之特點 介面材料4 0 出兩末 基本平 末端2 4 觸不良 良之導 米,本 片機進 切片時 機切割 彎曲, 端24, 行於熱 之彎曲 ,增大 熱性能 實施例 行切割 直接控 方向之 然大部. 碳管陣列2 2經 陣列2 2於高分 ,於垂直薄膜 具有導熱係數 該兩末端 介面材料 部分能避 直接接觸 。本發明 熱介面材 的位置’ 制,方法 不同,碳 分都將基 南分子材 子材料34 方向形成 高、導熱 製得之熱介面材料40中,分布於熱介面材 管陣列2 2之形態基本不變,即奈米碳管陣 管之間距未變,且奈米碳管陣列2 2沒有聚 有定向排列之狀悲’並且此熱介面材料4 〇 〇 納米管之兩末端2 4均延伸出熱介面材料4 〇 平行於熱介面材料40之表面,其在應用時 納米管與熱源或散熱裝置之接觸面積,更200536462 V. Description of the invention (mouth, and the surface area of the carbon-free carbon surface of the shape 40, respectively, from the thick thermal interface material 40 of the thermal interface material / rA: the mouth is early, and the nanotube is parallel to the hair The material 34 is consolidated and has a uniform heat conduction channel. The special bundle 40 in the material 40 is integrated in the bundle, which has a good performance, and is formed to be able to effectively penetrate the whole into one. It is better to respond to the pipe and heat. The temperature is 20, material 40 is easy to control the end 24, and the thermal interface is bright to form a uniform and shaped point. This method nano carbon nano carbon maintains the original flexibility because carbon-bending increases the carbon thermal interface bending. When used, The thickness of the source or diffuser can be micron D. The thickness can be made. In addition, a material 40 interface material body is formed to make the vertical thermal material 40 and expose the curved part. The carbon nanotube thermal device is preferably connected to the carbon nanotube 1 ~ 1 0 0 0 micro-control cut according to demand, according to the surface of the slice in different directions. Material 40, the characteristics of the arrangement of nano-carbon nanotubes interface material 4 0 out of the two flat ends 2 4 bad contact Guide meter, the slicer cuts and bends at the time of slicing. The end 24 is bent by the heat, which increases the thermal performance. The direct cutting direction is largely controlled. The carbon tube array 2 2 passes the array 22 2 at high score. The vertical film has a thermal conductivity, and the interface materials at the two ends can avoid direct contact. The position of the thermal interface material of the present invention is different from the method. The carbon content will form a high-temperature, heat-conducting heat generated in the direction of the Kenan molecular material sub-material 34. In the interface material 40, the shape distributed in the thermal interface material tube array 22 is basically unchanged, that is, the distance between the nano carbon tube array tubes is not changed, and the nano carbon tube array 22 does not have a directional alignment. Both ends 24 of the thermal interface material 400 extend from the thermal interface material 40 parallel to the surface of the thermal interface material 40. When the thermal interface material 40 is applied, the contact area between the nanotube and the heat source or heat sink is even greater.
第12頁Page 12
200536462 五、發明說明(8) 好地發揮碳納米管之優良導熱性能。 請參閱第六圖,本發明製得之奈米碳管陣列熱介面 料4 0具有極佳之導熱性能,吁廣泛應用於包括中央處理养 (CPU)、功率電晶體、視頻圖形陣列晶片(VGA)、射頻晶^ 於内之電子器件80中,熱介面材料40置於電子器件8〇與散 熱器6 0之間,能提供電子器件8 0與散熱器6 0之間—優良熱 接觸,熱介面材料4〇之第一表面42與電子器件80之表面^’未 標示)接觸,與第一表面42相對應之熱介面材料40之第二夺 面44與散熱器6〇之底面(未標示)接觸。由於本發明製得之又 奈米碳管陣列熱介面材料4 〇可將其厚度控制於微米級,具 有較好之柔韌性,因而,即使於電子器件之表面參差不需: 之情況下’本發明之熱介面材料也能提供電子器件8〇與散 熱器60之間一良好之熱接觸。另,由於本發明熱介面材料 4 〇中之奈米碳管皆兩端開口,且沿熱介面材料之第一表面 42向第二表面44延伸並分別伸出該兩表面“,44形成兩 曲基本平行於熱介面材料4〇之第一表面42和第二表面44。 更好得保證奈米碳管與電子器件8 直接接觸,使得奈米後管之縱向導熱特性得到最二产1 :用’熱介面材料4◦具有導熱係數高且導;」Li:;; :上所述’本發明符合發明專利 專利申請。惟,以上所述去 要件犮依法k出 凡熟悉本案技藝之人士, ”、、本^明之較佳實施例,舉 ,於 200536462 圖式簡單說明 【圖式簡單說明】 第一圖係本發明中形成有催化劑薄膜之基底之示意 圖。 第二圖係第一圖所示基底上生長有定向排列之奈米碳 管陣列之示意圖。 第三圖係第二圖所示之奈米碳管陣列連同基底於熔融 態高分子中浸泡之示意圖。 第四圖係本發明中浸有熔融態高分子之奈米碳管陣列 之固化之示意圖。 第五圖係本發明中含奈米碳管陣列之熱介面材料示意 圖。 第六圖係本發明熱介面材料之應用不意圖。 【主要元件符號說明】 基底 11 催化劑層 12 奈米碳管陣列 22 末端 24 容器 30 熔融態高分子 32 高分子材料 34 熱介面材料 40 第一表面 42 第二表面 44 散熱器 60 電子器件 80200536462 V. Description of the invention (8) Make good use of the excellent thermal conductivity of carbon nanotubes. Please refer to the sixth figure. The nano carbon tube array thermal medium fabric 40 produced by the present invention has excellent thermal conductivity, and is widely used in central processing (CPU), power transistors, and video graphics array chips (VGA). ), RF crystal ^ In the electronic device 80, the thermal interface material 40 is placed between the electronic device 80 and the heat sink 60, which can provide the electronic device 80 and the heat sink 60-excellent thermal contact, heat The first surface 42 of the interface material 40 is in contact with the surface of the electronic device 80 (not labeled), the second surface 44 of the thermal interface material 40 corresponding to the first surface 42 and the bottom surface of the heat sink 60 (not labeled) )contact. Since the nano-carbon tube array thermal interface material 4 prepared by the present invention can control its thickness to the micron level and has good flexibility, therefore, even if the surface of the electronic device does not need to be: The invented thermal interface material can also provide a good thermal contact between the electronic device 80 and the heat sink 60. In addition, the nano-carbon tubes in the thermal interface material 40 of the present invention are open at both ends, and extend along the first surface 42 to the second surface 44 of the thermal interface material and respectively protrude from the two surfaces ", 44 forming two curves. The first surface 42 and the second surface 44 of the thermal interface material 40 are substantially parallel to each other. It is better to ensure that the carbon nanotubes are in direct contact with the electronic device 8 so that the longitudinal thermal conductivity of the nano-tubes is maximized. 1: 'The thermal interface material 4◦ has a high thermal conductivity and conductivity;' Li: ;;: mentioned above 'The present invention complies with the invention patent application. However, the above-mentioned requirements must be followed by those who are familiar with the skills of this case. The preferred embodiment of the "," and "Bing Ming" is briefly explained in 200536462. [Schematic description of the diagram] The first diagram is in the present invention A schematic diagram of a substrate with a catalyst film formed. The second diagram is a schematic diagram of an aligned carbon nanotube array grown on the substrate shown in the first diagram. The third diagram is a nanocarbon array and the substrate shown in the second diagram. Schematic diagram of soaking in a molten polymer. The fourth diagram is a schematic diagram of the curing of a nano-carbon tube array impregnated with a molten polymer in the present invention. The fifth diagram is a thermal interface of the nano-carbon tube array in the present invention. Schematic diagram of materials. The sixth diagram is not intended for the application of the thermal interface material of the present invention. [Description of the main component symbols] Substrate 11 Catalyst layer 12 Nano carbon tube array 22 End 24 Container 30 Molten polymer 32 Polymer material 34 Thermal interface material 40 first surface 42 second surface 44 heat sink 60 electronic device 80
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| TWI386152B (en) * | 2005-11-11 | 2013-02-11 | Hon Hai Prec Ind Co Ltd | Heat sink |
| TWI401209B (en) * | 2006-06-30 | 2013-07-11 | Hon Hai Prec Ind Co Ltd | Field emission componet and method for making same |
-
2004
- 2004-04-16 TW TW93110604A patent/TWI246879B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI246879B (en) | 2006-01-01 |
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