1232286 曰 ___案號9211511^ 萆 ：月 五、發明說明（1) 【發明所屬之技術領域】 本發明係關於一種熱介面材料及其製造方法，尤指一 種利用奈米碳管導熱之熱介面材料及其製造方法。 【先前技術】 α近年來，Ik著半導體器件集成工藝之快速發展，半導 體為件之集成化程度越來越高，惟，器件體積卻變得越來 越小0，其對散熱之需求越來越高，已成為一個越來越重要 之問題。為滿足該需要，風扇散熱、水冷辅助散熱及熱管 散熱等各種散熱方式被廣泛運用，並取得一定之散熱效 j，但因散熱器與半導體集成器件之接觸介面之不平整， 一般相互接觸面積不到2%，未有一個理想之接觸介面，從 根本上影響半導體器件向散熱器傳遞熱量之效果，故，於 =器與半導體器件之間增力口 一具車交冑熱傳遞係數之介面 材料以增加介面之接觸程度實為必要。 傳 基體 、銀 體之 使用 和橡 普遍 已經 求， 間儘 特殊 統熱介面材料係將 以形成復合材料， 或其他金屬等。此 性質。其中以油脂 時為液態能與熱源 膠為載體之復合材 缺陷係整個材質導 越來越不能適應半 而增加聚合物基體 量相互接觸以增加 之介面材料因此可 物 鋁 基 其 膠 這 需 之 4匕 導熱係數較高之顆粒分散於聚合 如石墨、氮化硼、氧化矽、氧化 種材料之導熱性能取決於聚合物 、相變材料為基體之復合材料因 表面浸潤故接觸熱阻較小，而石夕 料接觸熱阻相對較大。該類材料 熱係數較小，典型值為1 ^ / m K , 導體集成化程度之提高對散熱之 之導熱顆粒含量使得顆粒與顆粒 整個復合材料之導熱係數，如某 達到4-8W/mK ’ 惟，1232286 ___ Case No. 9211511 ^ 萆: Fifth, description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a thermal interface material and a method for manufacturing the same, and particularly to a heat transfer method using a carbon nanotube. Interface material and manufacturing method thereof. [Previous technology] α In recent years, Ik has been developing the rapid development of semiconductor device integration processes. The integration degree of semiconductors has become higher and higher, but the device size has become smaller and smaller. The demand for heat dissipation is increasing. The higher, it has become an increasingly important issue. In order to meet this need, various cooling methods such as fan cooling, water cooling auxiliary cooling, and heat pipe cooling are widely used, and have achieved a certain heat dissipation effect. However, due to the uneven contact interface between the heat sink and the semiconductor integrated device, the contact area between them is generally different. To 2%, there is no ideal contact interface, which fundamentally affects the effect of transferring heat from the semiconductor device to the heat sink. Therefore, the interface between the device and the semiconductor device has an interface material with a heat transfer coefficient. It is necessary to increase the contact level of the interface. The use of substrates, silver bodies, and rubber has generally been requested, and special thermal interface materials will be used to form composite materials or other metals. This nature. Among them, the defect of the composite material which is liquid when oil is used as the carrier and the heat source glue is that the entire material guide is increasingly unable to adapt to the increase of the amount of the polymer matrix to increase the interface material to contact each other. Therefore, aluminum-based glues are needed. Particles with a high thermal conductivity are dispersed in polymers such as graphite, boron nitride, silicon oxide, and oxide materials. The thermal conductivity of materials depends on the polymer and the phase change material. The composite material with a matrix as the matrix has low contact thermal resistance due to surface wetting. The contact thermal resistance of Shi Xi material is relatively large. The thermal coefficient of this kind of material is small, the typical value is 1 ^ / m K. The increase of the degree of integration of the conductor improves the thermal conductivity of the heat-dissipating particles, which makes the thermal conductivity of the particles and the entire composite material, such as 4-8W / mK ' but,
第7頁 1232286 修正Page 7 1232286 Correction
案號 92115117 i、發明說明（2) -之導熱顆粒含量增加至一定程度時，會使聚合物基體失 原本之性能，如油脂會變硬，從而浸潤效果變差，橡 會變得較硬，從而失去應有之柔韌性，這都 ^ 料性能大大降低。 使”、、”面持 近來有一種熱介面材料，係將定向排列之導埶係 為1100 W/mK之碳纖維一端或整體用聚合物固定，…從而於勺 ，介面材料之垂直方向形成定向排列之碳纖維陣列，以估 母一奴纖維均可形成一導熱通道，該方式可有效提高熱八 面材料之導熱係數，達到5〇 —9Q w/mK。 …、^丨 缺點係厚度必須於4。微米以上，而整個熱介面材員 係數與溥膜之厚度成反比，故當其熱阻 “、、 進一步降低之空間相當有限。 疋私度， =善熱介面材料之性能，帛高其熱傳Case No. 92115117 i. Description of the invention (2)-When the content of thermally conductive particles is increased to a certain degree, the polymer matrix will lose its original performance. For example, the oil will harden, so the wetting effect will be poor, and the rubber will become harder. As a result, the flexibility it deserves is lost, which greatly reduces its performance. There is a thermal interface material for the "," surface recently. The orientation of the carbon fiber is 1100 W / mK. One end or the whole is fixed with a polymer, so as to form a directional arrangement of the interface material in the vertical direction. The carbon fiber array is estimated that both mother and slave fibers can form a thermal conduction channel. This method can effectively improve the thermal conductivity of the hot octahedral material to reach 50-9Q w / mK. …, ^ 丨 The disadvantage is that the thickness must be less than 4. Above the micron, and the coefficient of the entire thermal interface material is inversely proportional to the thickness of the diaphragm, so when the thermal resistance ",, the space for further reduction is quite limited. The degree of privacy, = the performance of a good thermal interface material, the higher its heat transfer
衣扁名為 Unusually High Thermal (10 10)1^^ 〇f Carb〇n NanotubesM ^ ,，ZM U U，i (J )奈米碳管於西 6 % 體内容可表閱D 數可達6600 w/mK ，足 係數之較The name of the clothing is Unusually High Thermal (10 10) 1 ^^ 〇f Carb〇n NanotubesM ^ ,, ZM UU, i (J) carbon nanotubes in the west 6% of the body content can be read D number up to 6600 w / mK, comparison of foot coefficient
體，通過注模方；巧：到聚合物基體結成-導熱表面之面積：；：；；：=，且該熱介面材料之兩 與熱源接觸—面之面7、言二ί;;15接觸一面之面積大於 方：製得之熱介面材‘有二足之處利熱器？熱，但該 熱介面材料厚度較 /、一，注模方式製得 1232286 五、發明說明（3) U:加f熱介面材料之體積’與器件向小型化方向發 展之趨勢不相適應，且熱介面材料缺乏柔韌性·並 太 ΐί:於基體材料令未有序排列，其於基體分佈：：勾： 較難確保，因而熱傳導之均勻性亦受到影響， β 縱向導熱之優勢未充分利用，影響埶介& 2 ;;石厌吕 數。 …；丨向材科之熱傳導係 厚度薄 有II於此，提供一種具優良之敎傳導 ，餘性佳且熱傳導均勻之熱介面材料實為二 【内容】 厚度薄 矛知明之目的在於提供一種導熱效果優良 木韌性佳之熱介面材料。 法。本發明之另一目的係提供此種熱介面材料之製作方 本發明係基於奈米碳管陣列導埶之埶八 :面材料係由聚合物基體及分佈於其該熱 列。該奈米碳管陣列於該聚合物基體沿同_方二平= 本發明熱介面材料之製造方法包括以下步驟： -基底：先，提供一奈米碳管陣列，該奈米碳管陣列置於 其次，用預聚物浸潤奈米碳管陣列； 最后，固化預聚物，形成熱介面材料。 /、先前之熱界面材料相比，本發明揾批夕备田 因奈米碳管陣列具均勾定向 界面材料 每—根奈米碳管均可μ古拍」2 3該熱介面材料之 Τ均了於垂直熱介面材料方向 1232286 急Body, through injection molding; Q: to the polymer matrix formed-the area of the heat-conducting surface: ;;;; =, and two of the thermal interface material is in contact with the heat source-surface 7, face 2; 15 contact The area of one side is larger than that of the square: The thermal interface material obtained has a 'two-footed sharpener'? It ’s hot, but the thickness of the thermal interface material is smaller than 1, the injection molding method is 1232286 V. Description of the invention (3) U: The volume of the thermal interface material f is not compatible with the trend of miniaturization of the device, and The thermal interface material lacks flexibility. It is too flexible: it is not ordered in the matrix material, and it is distributed in the matrix :: Hook: It is more difficult to ensure, so the uniformity of heat conduction is also affected. The advantage of β longitudinal heat conduction is not fully utilized. Affects Yusuke &2;;…; 丨 The thickness of the thermal conduction system of Xiangke Branch is II. Here, it is two to provide a thermal interface material with excellent thoracic conduction, good margin and uniform thermal conduction. [Content] The purpose of thin thickness is to provide a thermal conductivity Thermal interface material with excellent wood toughness. law. Another object of the present invention is to provide a method for making such a thermal interface material. The present invention is based on the carbon nanotube array guide No. 8: The surface material is composed of a polymer matrix and distributed in the heat column. The nano carbon tube array is aligned with the polymer matrix along the side of the square. The manufacturing method of the thermal interface material of the present invention includes the following steps:-substrate: first, a nano carbon tube array is provided, and the nano carbon tube array is placed next The carbon nanotube array is impregnated with a prepolymer. Finally, the prepolymer is cured to form a thermal interface material. / 、 Compared with the previous thermal interface materials, the present invention has a uniformly aligned directional interface material for carbon nanotube arrays with nanometer carbon nanotubes. Each nanometer carbon tube can be used for micro shots. 2 3 of the thermal interface material Are aligned in the vertical thermal interface material direction
案號 92115117 五、發明說明（4) _道，得到導熱係數較高之熱介面材料。 【實施方式】 請一併參閱第一圖與第二圖，首先係於一 沈積一催化劑層1 2，其方法可利用緣沈 ♦土氐 二二 濺射法完成。基底11之材料可用破璃、石―子束沈積或 鋁。本實施例採用多孔矽，其表面係一客3 a 3乳化 、夕孑匕層，：f丨之亩；^ 極小，一般小於3奈米。催化劑層1 2之材料可、、 : 鎳及其合金，本實施方式選用鐵作為催化劑°材$料载^ 氧化催化劑層12，形成催化劑顆粒（圖^未示）°，再將 分佈有催化劑之基底Π置於反應爐中（圖未示），於7 〇 〇:〜 1 0 0 0攝氏度下，通入碳源氣，生長出奈米碳管陣列；，其中 碳源氣可為乙炔、乙烯等氣體，奈米碳管陣列2 2之高&在 一定範圍内可通過控制其生長時間來控制，_般生i ^度 為卜1 0 0微米，本實施例之奈米碳管陣列2 2之生長高度為 100微米。有關奈米碳管陣列22之生長方法已較^ : 具體可參閱文獻Science, 1999, 283, 512-414及文獻 J’AiChem.Soc, 2001’ 123’ 11502 -11503，此外美國專利 第6,350,488號亦公開一種大面積生長奈米碳管陣列之方 法。 請參閱第三圖，將預聚物32裝入一容器30中，將生長 完備之定向排列奈米碳管陣列2 2連同基底11 一同浸到預聚 物3 2中，待預聚物3 2完全浸潤奈米碳管陣列2 2，預聚物3 2 之完全浸潤之時間同奈米碳管陣列2 2之高度、密度以及整 個奈米碳管陣列2 2之面積及預聚物3 2自身之粘度有關。 請參閱第四圖、第五圖及第六圖，將經預聚物3 2浸潤之奈Case No. 92115117 V. Description of the invention (4) _ Road, to obtain a thermal interface material with high thermal conductivity. [Embodiment] Please refer to the first figure and the second figure together. First, a catalyst layer 12 is deposited. The method can be completed by using the edge-sinking method. The material of the substrate 11 may be broken glass, stone-beam deposition, or aluminum. In this embodiment, porous silicon is used, and its surface is a 3 a 3 emulsified layer, which is f acres; ^ Very small, generally less than 3 nanometers. The material of the catalyst layer 12 can be: nickel and its alloy. In this embodiment, iron is used as the catalyst. The material is oxidized on the catalyst layer 12 to form catalyst particles (not shown in the figure). The substrate Π is placed in a reaction furnace (not shown), and carbon source gas is passed at 7000: to 1000 degrees Celsius to grow an array of carbon nanotubes. The carbon source gas may be acetylene or ethylene. And other gases, the height of the carbon nanotube array 2 2 can be controlled by controlling its growth time within a certain range, and the degree of heat generation is 100 μm. The carbon nanotube array 2 of this embodiment is 2 The growth height of 2 is 100 microns. The growth method of the carbon nanotube array 22 has been compared. For details, please refer to Science, 1999, 283, 512-414 and J'AiChem.Soc, 2001 '123' 11502-11503. In addition, US Patent No. 6,350,488 also Disclosed is a method for growing a large area carbon nanotube array. Referring to the third figure, the prepolymer 32 is packed into a container 30, and the fully-grown aligned carbon nanotube array 2 2 is dipped into the prepolymer 3 2 together with the substrate 11, and the prepolymer 3 2 The time when the carbon nanotube array 22 is completely infiltrated and the prepolymer 3 2 is fully wetted is the same as the height and density of the carbon nanotube array 22 and the area of the entire carbon nanotube array 22 and the prepolymer 3 2 itself. Related to viscosity. Please refer to the fourth, fifth and sixth pictures, the pre-infiltrated by the prepolymer 3 2
第10頁 1232286 __案號 92115117 — % 日 修正__ — 五、發明說明（5) 米碳管陣列2 2連同基底11從容器3 0取出，浸潤奈米碳管陣 列2 2之預聚物3 2於相對濕度大於4 0 %之條件下進行固化反 應，待24小時後，預聚物32固化形成聚合物34，再將該聚 合物3 4從基底11進行脫膜’再經7 2小時固化，形成熱介面 材料40，其厚度為100微米，與原先奈米碳管陣列高度 一致。即熱介面材料40之厚度取決於所生長之奈米碳管陣 列之高度，故，可通過控制奈米碳管陣列之生長高度製得 所需不同厚度之熱介面材料40。 再請參閱第六圖，本發明之熱介面材料40，奈米碳管 陣列2 2經聚合物3 4固結形成一體，奈米碳管陣列2 2於聚合 物34垂直、均勻分佈，形成複數熱傳遞通道，所形成之熱 介面材料40具較高導熱係數，且導熱均勻之特點。 通過掃描電子顯微鏡（SEM)圖像證實，本發明製得之 熱介面材料4〇，奈米碳管陣列22於熱介面材料40之形態基 本未變’即奈米碳管陣列22之奈米碳管之間距未變，且奈 米碳管陣列未聚集成束，保持初始定向排列之狀態，且此 熱介面材料4〇具有一般聚合物之良好柔韌性。 本發明採用之預聚物3 2可為多元醇聚驗和異氰酸酯類 化合物反應而成，其中多元醇聚醚之分子量範圍為300〜 3 0 0 0 ’官能度為2〜4，異氰酸酯之分子量範圍為1 〇 〇〜3 0 0， 官能度為2〜3，其分子鏈節結構可為脂肪族，亦可為芳香 族’通過調節多元醇聚醚與異氰酸酯之分子量與官能度之 比例’可改變預聚物3 2之強度與韌性。 上述多元醇聚醚可從以下所列方法選取，但不限於以 下所列之方法··（丨）乙二醇為起始劑，經環氧乙烷或環氧Page 10 1232286 __Case No. 92115117 —% Daily Correction __ — V. Description of the Invention (5) The rice carbon tube array 2 2 is taken out of the container 30 together with the substrate 11 and the prepolymer of the nano carbon tube array 22 is infiltrated. 3 2 The curing reaction is performed at a relative humidity of more than 40%. After 24 hours, the prepolymer 32 is cured to form a polymer 34, and the polymer 3 4 is stripped from the substrate 11 ', and after 7 2 hours It is cured to form a thermal interface material 40 with a thickness of 100 microns, which is consistent with the height of the original carbon nanotube array. That is, the thickness of the thermal interface material 40 depends on the height of the nano-carbon tube array to be grown. Therefore, the thermal interface material 40 of different thickness can be obtained by controlling the growth height of the nano-carbon tube array. Referring again to the sixth figure, the thermal interface material 40 of the present invention, the carbon nanotube array 2 2 is consolidated by the polymer 3 4 to form a whole, and the carbon nanotube array 22 is vertically and uniformly distributed on the polymer 34 to form a complex number. In the heat transfer channel, the formed thermal interface material 40 has a high thermal conductivity and uniform thermal conductivity. Scanning electron microscopy (SEM) images confirm that the thermal interface material 40 prepared by the present invention has substantially the same shape as the thermal interface material 40 of the nano-carbon tube array 22, that is, the nano-carbon of the nano-carbon tube array 22. The distance between the tubes is not changed, and the nano carbon tube array is not clustered into a bundle, maintaining the state of initial orientation, and the thermal interface material 40 has good flexibility of general polymers. The prepolymer 3 2 used in the present invention can be obtained by reacting a polyhydric alcohol with an isocyanate compound, wherein the molecular weight range of the polyol polyether is 300 to 300 0 'with a functionality of 2 to 4, and the molecular weight range of the isocyanate. It is 100 ~ 3 0, and the functionality is 2 ~ 3. The molecular chain structure can be aliphatic or aromatic. 'It can be changed by adjusting the ratio of the molecular weight and functionality of polyol polyether and isocyanate'. Strength and toughness of prepolymer 32. The above polyhydric alcohol polyether can be selected from the methods listed below, but is not limited to the methods listed below. (丨) Ethylene glycol as a starting agent, after ethylene oxide or epoxy
1232286 _fi_92115HI_— 從丁 五:發明說明（6) "~~~ -- •丙烷擴鏈而成之聚醚二元醇；（2)甘油為起始劑，經 乙烷或環氧丙烷擴鏈而成之聚醚二元醇；Γ^ ^ 李戊四醇 為起始劑，經環氧乙烷或環氧丙烷擴鏈而成之聚醚四元醇 等。 吁 上述異氰酸酯化合物可以從以下但不限於以下 法選取：α)芳香族之甲苯二異氰酸酯（TDI)二 二異氰酸醋（MD!) 42)脂肪族之已二異氰酸S^HDI^里^ 爾酮二異氰酸酯（IPDI) ; (3)由上述之二異氰酸酯與三/羥 甲基丙烷形成具三官能度之異氰酸g旨。 〃 工 預聚物3 2合成之具體步驟如下··： 首先，將所用多元醇聚醚於丨〇 〇艺以上、較 11 0 °C〜1 4 0 °C進行真空脫水2小時； 乂土 ； 然後，將一定質量之二苯基甲院二異氛酸醋加 授拌器、溫度計及帶有乾燥劑封端之冷凝器之反應瓶中搜 拌，緩杈加熱，待其融化後按理論計算比例加入混合 醇聚醚以及部分經簡單蒸餾脫水之乙酸乙醋，充分混人 均勻。將溫度緩慢升至8(TC〜85t左右反應，於反應過程 每隔一定時間取樣，用AT-410型自動電位滴定儀進行電位 滴定，測定反應體係之NC0(異氰酸根基團）之含量，待該 指標達到預定值後停止反應。 為利於預聚物32充分浸潤奈米碳管陣列22，其粘度之 要求，於10〇mps。預聚物32粘度之調節，可於聚合體係加 入適里惰性溶劑，本實施例加入惰性溶劑為乙酸乙酯，惰 ?容劑亦可為其他材料，包括低分子量之酯類，如乙酸丙 醋、乙酸異戊醋等；_類如丙_、丁1232286 _fi_92115HI_— From Ding Wu: Description of the invention (6) " ~~~-• Polyether diol made from propane chain extension; (2) Glycerin as a starter, extended by ethane or propylene oxide The polyether diol produced; Γ ^ ^ Pentylenetetraol as a starter, and a polyether tetraol formed by chain extension of ethylene oxide or propylene oxide. The above isocyanate compounds may be selected from the following but not limited to the following methods: α) Aromatic toluene diisocyanate (TDI) didiisocyanate (MD!) 42) Aliphatic diisocyanate S ^ HDI ^ ^ Ketone diisocyanate (IPDI); (3) a trifunctional isocyanate g formed from the above diisocyanate and tri / methylolpropane. The specific steps for synthesizing the prepolymer 3 2 are as follows: First, the polyether polyether used is subjected to vacuum dehydration for 2 hours at a temperature of more than 110 ° C to 140 ° C; Then, add a certain amount of diphenyl methacrylate diisocyanate to a blender, thermometer, and reaction bottle with a desiccant-terminated condenser, heat it slowly, wait for it to melt, and calculate the ratio according to theory. Add mixed alcohol polyether and ethyl acetate which is dehydrated by simple distillation, and mix thoroughly. The temperature is slowly raised to 8 (TC ~ 85t), and samples are taken at regular intervals during the reaction. Potential titration is performed with an AT-410 automatic potentiometric titrator to determine the NC0 (isocyanate group) content of the reaction system. The reaction is stopped after the index reaches a predetermined value. In order to facilitate the prepolymer 32 to fully wet the carbon nanotube array 22, the viscosity requirement is 100 mps. The viscosity adjustment of the prepolymer 32 can be added to the polymerization system. Inert solvent. The inert solvent added in this embodiment is ethyl acetate. The inert solvent can also be other materials, including low molecular weight esters, such as propyl acetate, isoamyl acetate, etc .;
第12頁 曰 正 之用量 聚物32 之熱介 央處理 、射頻 器件8 0 間一優 器件80 面材料 由於本 度僅微 面參差 子器件 法提出 例，舉 之等效 1232286 案號 92Π5117_ji 五、發明說明（7) 烃如一氣乙烷、二氯乙烷、四氣化碳等。惰性溶劑 可占預聚物32質量0〜20 %，惰性溶劑僅用於降低預 之粘度，以利於對奈米碳管陣列2 2空隙之浸潤。 請一併參閱第七圖，本發明製得奈米碳管陣列 面材料40具有極佳導熱係數，可廣泛應用於包括中 器（cpu)、功率電晶體、視頻圖形陣列晶片 晶片在内之電子器件8〇中，熱介面材料4〇置於電子 與散熱器60之間，能提供電子器件8〇與散熱器⑼之 良介面熱接觸，熱介面材料4〇之第一表面42':電子 妾觸，與第一表面42相對應：熱介 〇之弟一表面44與散熱器6〇之底面（未標示）接觸。 發明製得奈米碳管陣列之熱介面材料4〇極薄，里 米級’故具較佳之柔韌性，即便於電子器件8〇 ^ Ζ 8: I I : St發明之熱介面材料4〇亦能提供電 ，、政…、6 0之間一良好熱接觸。 綜上所述，本發明符合發明專利之要件， 專利申請。惟，以上所述者僅為本發明之較佳實施 凡熟悉本案技藝之人士，在援依本案發 = 修倚或變化，皆應包含於以下之申請專利範圍申：作 第13頁 1232286 _案號 92115117_^ ： Ά 1 曰__ 圖式簡單說明 【圖式簡單說明】 第一圖係本發明含有催化劑薄膜之基底示意圖。 第二圖係於第一圖所示基底生長定向排列之奈米碳管 陣列示意圖。 第三圖係本發明奈米碳管陣列於預聚物浸泡之示意 圖。 第四圖係本發明浸有預聚物之奈米碳管陣列之固化示 意圖。 第五圖係本發明固化之奈米碳管陣列於基體被揭起之 過程示意圖。 第六圖係本發明含奈米碳管陣列之熱介面材料示意 圖。 第七圖係本發明熱介面材料之應用示意圖。 【主要元件符號說明】 基底 11 催化劑層 12 奈米碳管陣列 22 容器， 30 預聚物 32 聚合物 34 熱介面材料 40 散熱器 6 0 電子器件 80The 12th page refers to the positive dosage of polymer 32, thermal media processing, RF device 80, and one excellent device 80. The surface material is only an example given by the micro-plane stray sub-device method, which is equivalent to 1232286. Case No. 92Π5117_ji V. Invention Explanation (7) Hydrocarbons such as monogas, dichloroethane, and tetragas. The inert solvent may account for 0 to 20% of the mass of the prepolymer 32. The inert solvent is only used to reduce the pre-viscosity to facilitate the infiltration of the voids in the carbon nanotube array 22. Please refer to the seventh figure together. The nano-carbon tube array surface material 40 prepared by the present invention has excellent thermal conductivity and can be widely used in electronics including cpu, power transistor, and video graphics array chip. In the device 80, the thermal interface material 40 is placed between the electron and the heat sink 60, and can provide the thermal contact between the electronic device 80 and the good interface of the heat sink. The first surface 42 'of the thermal interface material 40: the electron. The contact corresponds to the first surface 42: a surface 44 of the brother of the thermal medium 0 is in contact with the bottom surface (not labeled) of the heat sink 60. The thermal interface material 40 of the nano-carbon tube array made by the invention is extremely thin, and the thickness of the rim grade is better, so it can be used even in the thermal interface material 4 of the invention of the electronic device 8〇 ^ 8: II: St. Provide a good thermal contact between electricity, government ..., 60. In summary, the present invention complies with the requirements of the invention patent and the patent application. However, the above is only the preferred implementation of the present invention. Those who are familiar with the skills of this case, who are relying on this case = repair or change, should be included in the following patent application: made on page 13 1232286 _ Case No. 92115117_ ^: Ά 1 __ Brief description of the drawings [Simplified description of the drawings] The first diagram is a schematic diagram of a substrate containing a catalyst film according to the present invention. The second figure is a schematic diagram of a nano-carbon tube array in which the substrates are oriented in the direction shown in the first figure. The third figure is a schematic view of the nano-carbon tube array of the present invention soaked in a prepolymer. The fourth figure is a schematic view showing the curing of a nanocarbon tube array impregnated with a prepolymer according to the present invention. The fifth figure is a schematic diagram of the process of lifting the cured carbon nanotube array of the present invention from the substrate. The sixth figure is a schematic view of the thermal interface material of the carbon nanotube array containing the present invention. The seventh diagram is an application schematic diagram of the thermal interface material of the present invention. [Description of main component symbols] Substrate 11 Catalyst layer 12 Nano carbon tube array 22 Container, 30 Prepolymer 32 Polymer 34 Thermal interface material 40 Radiator 6 0 Electronic device 80
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