TWI245375B - Nonvolatile flash memory of hafnium silicate nanocrystal - Google Patents

Abstract

The present invention relates to a nonvolatile flash memory of hafnium silicate nanocrystal, which utilizes the process of rapidly temperature annealing (RTA) to grow a hafnium silicate thin-film layer containing high-density, particulate nanocrystall. The disclosed process is simple and can be combined with current process technique of integrated circuit without introducing any new instruments or step of process and can be applied in producing Flash memory, nonvolatile memory, and the related semiconductor industry.

Description

1245375 IX. Description of the invention: [Technical field to which the invention belongs] The present invention provides a non-volatile flash memory prepared by using nanometer silicate particles, especially the present invention uses a rapid temperature annealing process ^ Rapidly Temperature Annea丨 丨 ng 'RTA) Grow a HfS..a thin film layer with nanocrystals, ^ applied to Flash memory, nonvo 丨 atMememory And other related memory and semiconductor industries ;. [Previous Technology] With the advent of the high-tech era, semiconductor materials and technologies based on silicon (s 丨 丨 丨 · con) have influenced the lives of the general public. With the development of the semiconductor industry, more and more emphasis is placed on the materials and technologies of various electronic products, memory, and materials, which must be lightweight, compact, short, small, and portable (such as mobile phones, smart phones ( smartph〇ne), pen drive, pDA ... etc.). Memory (memory) can be divided into,, volatile (v〇 | at ^), and, non-volatile (Non- volati 丨 e), and so on. Non-volatile memory (.Non-volatue memory) is the earliest product is read-only memory (ROM, Read-Only-Memory) 'Although cheap and high density (high density)' Different masks are used for different users, so it cannot be standardized and mass-produced, and its cost and function are not powerful enough. In order to solve the above problems, a programmable ROM (also known as PRm) appeared after 1245375. It is not necessary to use a special photomask for each household. It can also be used after the production of memory chips. The required information is written in, so there is an advantage of rapid production. However, although the programmable ROM can be programmed according to the customer's needs, the programming method is not very convenient. Therefore, it can be improved to another method that can be applied after the wafer is produced. Programmable electronically programmable ROM （e | ectr 丨 · ca 丨 丨 y

Programmable R〇M), also known as EPROM (such as 丄 8 A ~

Figure 18B), but because EPROM needs to use ultraviolet light (UV, ht) when erasing (erase) data, more expensive materials are needed on the package. 3 In order to solve the above problems, I have proposed another An electronically erasable Programmable Read-Only-Memory (EEPROM) that can be programmed or erased without applying UV light and applying a voltage (see Figure 19a). The voltage is applied to the gate to remove the electron (e | ectr〇n) or hole (h〇 | e) from the floating gate. For example, in 1980, Intel (丨 nte 丨) proposed the A closed-through oxide layer (FLOTOX, floating-gate tun ^ lWde) memory, which is made of a thin oxide layer above the #next terminal, because the programming of the 6H device is not a hot electron. electron) type, but relying on the method of electron tunneling (e | ectrón tunneling), using an applied high voltage to make the electric field across the thin oxide layer high, so Fuller-Nordhan penetration (F0w e "_N〇rdheim tunneNng, FNtUnneling), so that electrons can enter the floating gate, which will draw 1245375 heart beat and source (s ource) Ground, make the interval =: sticky, but the opposite is to be removed, add + 20V to the extreme voltage of the closed electrode (as shown in Figure 19B). Because the above method needs to make a very thin penetrating oxide) 'And the quality (q_ty) is better, which makes the process difficult; and: the working voltage of the kilogram is too high (+ 2〇v)', and its layout Γ / Λ 'requires each unit of u to store 储存|) 1 2 0 (not shown in the figure) 'and the operation speed is slower (using the M-plane ehng). Therefore,' Another-emphasis on speed and smaller flash memory, while reducing the area at the same time, == 〇 「 ) Only one unit is needed (1 to 2 programs are edited using hot electrons, but the hot electrons are generated by the extremes, but when cleared, they are performed by fn tca ^ "on the gates". Applying voltage to move electrons from the floating gate = ❹ low voltage (丨. ". 丨 _), that is, only + 5V is added when the program is edited. Therefore, it is called flash, and its f 夬And in the removal, one segment at a time ($ ⑽, :: 广 Ck) is used; however, because it is still necessary to make a very transparent layer, the process is difficult. When the memory of the above floating gate structure is proposed, it is also shown at the same time), also known as metal-nitride-oxide half-conductor bottle ^ I Nitride-Oxide Semiconductor (MNOS), which is based on silicon with silicon lice compounds as the structure Non-volatile memory (such as two, one " .... A V d map (Meta a 1245375 (sihcon wafer) first grows a thin oxide layer, and then grows a good quality gasification layer ( nitride), plus a metal layer (_3 |); but because the above method still requires a very thin oxide layer (about tens of angstroms and a good quality nitride layer, making its process technology difficult and not used, And the MNOS has a leakage current from the top to the gate electrode (gatee | ectrode) direction, which reduces the retention time (retent 丨 〇nt 丨 me) of the memory cell. Therefore, another stone oxide nitrogen oxide oxide (S 丨 · 丨 丨 · ε〇η 〇 force buckle Nitride Oxide Silicon (S0NOS)) structure flash memory (as shown in Figure 23), there is an additional layer of oxide layer than the _os (blocking oxide), and then use the FN tunne 丨 ing current (such as the second

As shown in Figure 4A), the charge is stored in the energy level of the silicon nitride (3 丨 3 core, Nitride) layer. When the charge (electron or hole) is incident or jumped out through the thin penetrating oxide layer, In the energy level of the silicon nitride layer, its threshold voltage will change due to the type, quantity, and distribution of incident charges, and then it can be divided into high potential (Prgram State) and low. Potential (clear, Erase state) (as shown in Figure 2 4 B). Since the energy level of the silicon nitride layer is a discrete trap, the stored charges will not interact with each other, and the local defects of the dental oxide layer will not cause the loss of all charges, and the stored The charge in the energy level of the silicon nitride layer will not be lost with the disappearance of the external power source, so it is called non-volatile memory. But because it still needs a thin penetrating oxide layer, the process is not easy. 1245375 [Summary of the invention] =, The main purpose of the present invention is to provide a nanometer particle to prepare a hair-saving flash memory by using a simple process, Z sketching or erasing. Ping & In order to achieve the above-mentioned object, the present invention provides a non-volatile flash memory prepared by using tritium, which is filled with argon (called Canada, A ") and oxygen (0xygen '〇2) Under the environment, the two layers of (fine, listening) and ♦ (sme〇n, Sj) will be confocal Qiandu method (c0-S_e_) money-the thickness of 3G Angstroms to the film layer, and then Placed in a high vacuum (highVacuum) τ through human oxygen, _ C 60 seconds of rapid heating annealing process, so that the samarium silicate film layer to produce high density and small particles of nanocrystalline, and the samarium silicate film layer can be used The nano crystal traps charges, making it a memory with localized storage mode, and one unit (ce 丨 丨) can store 2 bits (2 bit / ce 丨 丨), and can be used in [EPROM, flash memory, SONOS memory and other related memory and semiconductor industry. [Embodiment] The present invention provides a non-volatile prepared by using nanometer silicate nanoparticles Flash memory is used to confocal thoron and silicon targets in an environment full of argon and oxygen. A 30 angstrom erbium silicate thin film layer is plated by plating, and then placed under high vacuum to pass in oxygen. After a rapid temperature annealing process at 900 ° C for 60 seconds, the erbium silicate thin film layer is generated. Rice crystal, the density range of this nano crystal is 0.9 ~ 1.9 × 1012 cm-2, the size of its particles 1245375 is less than 10 nanometers (_), and the oxalic acid can be used for the film layer- Nanometer crystals make up for the charge, making the storage method very regional. The above characteristics can be used to make memory, so that a unit can store 2 bits / cell, and its process is simple. Can be used for related memory such as Qiaoshuang, flash memory, SONOS memory, and semiconductor industry. 〇 is a step-by-step description of the present invention, and the invention is a step-by-step description of several preferred embodiments as follows: [Example 1] The non-volatile flash memory prepared by using nano-silicate silicate particles is called "see Figure 1 ~ 2 B", which is prepared by using silicon and nano-silicate particles of the present invention. Schematic diagram of the manufacturing process of non-volatile flash memory, cross-sectional diagram of the rhenium silicate film layer of the present invention, The schematic diagram of the silicon s under 4 film layer of the present invention. As shown in the figure: a substrate 1 of a p-type silicon wafer is placed in a vacuum environment (2 x 1 (T6torr)) , And pass argon and oxygen (flow rate 24 seem / 8 seem) 'using two dry materials to Shixi to coniferous Tibetan Mine method to deposit a layer of 3q angstromian acid to the film layer 3, and then set Oxygen was introduced under high vacuum, and after a rapid heating and annealing process at 900 C for 60 seconds, the nanocrystalline silicon silicate film layer 3 was formed into nanocrystalline crystals, and then the thermal coating method was used on the rhenium silicate film. A control gate layer 5 is plated on the layer 3, and the material of the control 1245375 interlayer 5 can be a uminum (a), which can be used as a gate electrode. The above-mentioned silicic acid-imparting thin film layer 3 was observed with a transmission electron microscope (Transition Electron Microscopy, TEM) to observe the formation of crystalline nano crystals, and the density of the nano crystals ranged from 0.9 to 1.9 X 1 〇12 cm · 2 'has a particle size of less than 10 nm. Please refer to "Figures 3A to 5 and Table i", which are schematic diagrams of different crystal states, X-ray photoelectron spectroscopy results, electrophysical measurements, and energy diffusion results of the silicon rhenium film layers of the present invention. As shown in the figure: the samarium silicate film layer of the present invention passes through 900. The rapid heating annealing process of 〇 changes the proportion and structure of the elemental composition of the oxalic acid to the layer, the structure changes from amorphous (am〇rph〇us) to polycrystalline (P〇lycrysta 丨 Hne), and measures the The charge and voltage (Charge_v. Ring, cv) of the shixi acid to the thin film layer is a voltage of 3 volts (V0 | tage 'v) to _3 volts, as shown in Figure 5, which can be seen In cv, a memory window (emory wmdc) w) of about 1V is opened, which means that the shixi acid has nano-crystals for the thin film layer and has the ability to capture electric charges, which can be applied to the memory. [Example 2] The use of S0N0s to prepare nano-micro particles for flash memory υ "solid" is the advantage of the present invention ^ non-volatile flash memory for nano particles体 之 〇〇〇〇

Illustration. As shown in the figure ..., use the vertical furnace tube to penetrate- U 1245375 Layer 2 grows on the center of an end face of a substrate of p-type si (p_typesi | ic〇n) 'The thickness of the penetrating oxide layer 2 is 20 angstroms, which can be a high dielectric constant ㈣ chemical gas An oxide layer is deposited on both sides of the substrate, and an n-source electrode or an 11-drain electrode can be formed on both sides of the substrate. Then, two different dry materials are synthesized by a physical chemical method [such as: atomic layer chemical vapor deposition (at〇mjc | aye “ chem 丨 ca |-vapor deposition (ALCVD), high-density plasma chemical vapor deposition (High-Density Plasma Chemica | Vap〇r Dep〇s⑴〇n, HDPCVD), base ore method (Sputterjng) or electronic residual vacuum evaporation Method (E-GUn)] plating the penetrating oxide layer 2 with a thickness of 30 angstroms of oxalic acid to the thin film layer 3, the qi may be dream and sorrow (wrong material), Yu and Shi Xi ( Feed) or give Shao (Ming acid give), and put in oxygen rolling under high true, through a rapid heating annealing process of 90 (rc 60 seconds), so that the oxalic acid to the film layer 3 produces Nano crystals, the density of the nano crystals ranges from 0.9 to 1.9 x 10 cm 2 and the particle size is less than 10 nanometers. Lai secret layer (Xi stone material is wrong) or S acid to the thin film layer (iv given as | g)!, Recycling co-chemical vapor deposition electric Lu (Pl is coffee a Enhance Chemica | _〇 "

DeP0son'PECVD) grows a thick j40 angstrom barrier oxide layer 4 (blOCking〇Xide) on the thin film layer 3, and the material of the oxygen blocking layer may be an oxide (〇 (She), nitride (N_e), 2- (Hf〇2), oxidized oxide (Zr〇2), oxidized oxide (~ so〗) or lanthanum (La2〇3), and finally use the thermal distillation method to The barrier oxide layer is plated—the material is aluminum, polycrystalline silicon, polycrystalline silicon germanium, or metal. Control: 13 1245375 Gate layer 5 is used to create a structure of §〇n〇s using oxalic acid to give nano-U particles Non-volatile flash memory for clothing. The above-mentioned snos structure's electric-voltage electrical property 'is a voltage of 3 volts to _3 volts. Please refer to "Figure 7", it can be seen that the memory window opened to the right of 1VA 'And the size of the memory window corresponding to the application of different voltages is also different, such as: from a minimum of 6V (3V to _3V) to a maximum of 2〇ν (ι〇ν to -10V) (as shown in Figure 8) ). The non-volatile flash memory prepared by using nanometer silicate particles of the present invention uses physical vapor deposition (PVD, Phys ^ w

Deposition) deposits oxalic acid to the thin film layer, and the thin film can be applied to any substrate. The above-mentioned rhenium silicate thin film layer stores electric charges in a discrete storage point towel, so the stored electric charges do not interact with each other. 4 Local defects penetrating the oxide layer do not cause all electric charges. Claw loss, and because the samarium silicate thin film layer uses nano crystals to make up for the charge, so the storage method can be very regional. The above-mentioned special county can be used to make memory to store 2 units per unit. Bit (2blt / CeM) 'sub has the advantage of high density (as shown in Figure 9 and Figure 10 and Table 2). Alpha and Month are shown in Figures 11 to 15 below. It is a non-volatile flash memory memory window prepared by using nanometer silicate and grains. As shown in the figure: the memory window of the present invention for preparing non-volatile tf biodegradation memory for nanoparticle using oxalic acid will increase due to the larger limit of the interrogation voltage (Vg). It is not easy to be disturbed during erasing. 14 1245375 When writing or erasing, the speed of the incident or extraction of electric charge is consistent with the thickness of the chemical layer. However, the oxide penetrating layer of the present invention can be used as a substrate. Moreover, the samarium silicate film layer of the present invention is 30 angstroms, so that it can be divided by ","., Or π, and its retention characteristics can hold a large amount of data and can be stored for a long time. Its cycle value can be ㈣6. Example 3] Unit Dot Memories (Single Dot Me,) using non-volatile flash memory prepared by Budweiser's grains

It is shown in Figure 6: "It is the non-volatile flash memory m memory structure of the present invention using cyanide jt I. 7: Figure 2 is as shown in the figure: a penetrating oxide layer 2Grows on the substrate of a complex structure called S-con_〇n_lnsu 丨 ator (S0 丨) 1 white

On the center of one end face, the material will be given to Huancai in a collinear way. This penetrates the oxide layer 2-the thickness is 3Q angstroms to the thin core 3, and the sublayer is put in oxygen at a high A altitude, passing through Seven speeds of 900 × 60 seconds. The annealing process is heated to generate nanocrystals in the lysate_layer 3. The density of the nanocrystals is in the range of 10nm and the size of the rhyme particles is less than 10nm. Layer 3 grows on the oxide barrier layer 4 and then 'polycrystalline rhenium layer 6 is grown on the oxygen barrier layer l' and on the penetrating oxide layer 2, the acid gives the thin film layer 3, the rhenium oxide layer 4 and A spacer layer 7 is grown on each of the two sides of the polycrystalline silicon layer 6 to form a structure of the unit cell memory. ㈣ ^ 15 1245375 Prepared non-volatile flash memory. [贯 例 4] Multi-bits Single Dot

Memory) Non-volatile flash memory prepared by using nano-silicate silicate particles ° μ Refer to "Figures 7 A to 17 B", which is the

The spear J is a schematic diagram of the structure of non-volatile flash memory prepared by nano-particles with oxalic acid. As shown in the figure ..... It includes a substrate 1 with a structure that is covered with silicon on an insulating layer. The substrate is formed on a first silicon layer 丄 丄-on the silicon dioxide layer 12 and a second silicon layer! 3 grows in the middle of one end face of the silicon dioxide layer 1 f, and then forms a penetrating oxide layer 2 on both sides of one end face of the silicon oxide layer 12 and the second silicon layer 丄 3 The thin film layer 3 is further formed on the penetrating oxide layer ^-^ The thin film layer 3 is plated on the 1 'dental permeation layer 2 by a coexistence method of two cut materials, and its thickness is 30 angstroms. Then put in oxygen under high temperature and go through a 90 ° rc 60 second rapid heating annealing process :, layer 3 generates nano crystals, the nano crystals mentioned above: 20 too: 1 × 9 × 1012⑽ · 2 'The nano crystal particles are large = the door' and a material is formed by nitrogen cutting hard mask on the penetrating oxide layer 2 and the oxalic acid to the thin film 3: 8, and then Gong Gong increased the film layer 3, and the resistance μ = chemical layer 4 was formed on the acid supply layer, and a control gate layer 5 16 1245375 (shown in Figure 17A) was formed on the sheep θ) and the resistance was oxidized. One of the end faces of layer 4 is chemically mechanically polished (chemiea | Mechanica | called 丨 training ^, CMP) 4 1 The control gate layer 5 is removed to form a control gate η (as shown in FIG. 17B) 'to form— Structure for Stone memory element using an acid Xi nm to non-volatile flash situation in mind of preparing an microparticles. As mentioned above, the present invention /%

It's important to improve the shortcomings of the habit, make the memory can be written or erased quickly, and it has the advantages of high density, good storage characteristics and good long-term characteristics, etc., so that the production of the present invention can be more progressive and consistent. It is more in line with the needs of those who have already met the patents for inventions, and has applied for patents in accordance with the law. Your review committee is still requested to dial ^, and we hope to grant patents as soon as possible to encourage creativity. However, the above are only the preferred embodiments of the present invention, and are intended to limit the scope of implementation of the present invention; therefore, any simple equivalent changes made according to the present invention and the content of the description of the invention and : Decorations should still fall within the scope of the invention patent.

17 1245375 [Brief description of the drawings] Figure 1 is a schematic diagram of the manufacturing process of the non-volatile flash memory prepared by using nanometer silicate particles of the present invention. FIG. 2A is a schematic cross-sectional view of the samarium silicate film layer of the present invention. / Figure 2B is a schematic plan view of the samarium silicate film layer of the present invention. Figure 3A is a schematic diagram of the amorphous state of the samarium silicate film layer of the present invention. FIG. 3B is a schematic diagram of the polycrystalline state of the oxalic acid to the thin film layer of the present invention. Figures 4A to 4B are schematic diagrams of the results of repair of an X-ray Photoelectron Spectrum (X-ray Photoelectron Spectrum) of the samarium silicate film layer of the present invention. Fig. 5 is a schematic diagram showing the electrical measurement results of the rhenium silicate film layer of the present invention. -Figures 6A ~ 6B are schematic diagrams of the structure of the SONOS of the non-volatile flash memory prepared by using nanometer silicate particles of the present invention. Fig. 7 is a schematic diagram of the electrical measurement results of the SONOS structure of the present invention. φ Figure 8 is a schematic diagram of a memory window curve of the SONOS structure of the present invention. Figures 9A ~ 9B are schematic diagrams of the stored charge curve of the SONOS structure of the present invention. Fig. 10 is a schematic diagram showing the working state curve of the SONOS structure of the present invention. Fig. 11 is a schematic view of a memory window curve of the SONOS structure of the present invention. 18 1245375

Erase characteristic curve of structure

Figure 1 2A of SONOS is a schematic diagram of the present invention. Figure 1 2B is a schematic diagram of the present invention. The 13 C diagram is the sonos 13th to 13C diagrams of the present invention, and the schematic diagram of the writing and erasing interference characteristics of the rear structure. The 14th = indicates the preservation characteristic curve of the s coffee structure of the present invention. Figure 15 shows the durability test curve of the sonos structure of the present invention. Fig. 16 'is a schematic diagram showing the structure of a unit it memory of non-volatile ★ flash memory prepared by Nissan Nanoparticles of the present invention. The first 17A ′ is a schematic diagram of a multi-bit memory structure before the completion of the chemical mechanical polishing method of the present invention. Figure 17B is a schematic diagram of the structure of the multi-bit memory after the completion of the chemical mechanical polishing method of the present invention. Figures 1 8 Α ~ 1 8 Β are schematic diagrams of epr0m used in the past. Figures 19A ~ 19B are schematic diagrams of a conventional EEPROM. Figure 20 is a schematic diagram of the conventional flot circuit. Figure 21 is a schematic diagram of a conventional flash memory. Figure 22 is a schematic diagram of the conventional MNOs memory. Figure 23 is a schematic diagram of a conventional SONOS memory. Fig. 24A is a schematic diagram of a conventional SN tunneling energy FN tunneling capacity of 1245375. Figure 2 4B is the intentional writing / erasing characteristic curve of S0N0S memory. Table 1 is an Energy Dispersive Spectrograph (EDS) and fruit selection table of the gadolinium silicate thin film layer of the present invention. Table 2 'is a working state data table of the SONOS structure of the present invention. [Description of Symbols of Main Components] Substrate 1 First stone layer 11 Silicon dioxide layer 12 Second silicon layer 13 π source / inferior layer 14 Penetrating oxide layer 2 Rhenium acid film layer 3 Barrier oxide layer 4 Chemical mechanical polishing Method 41 control gate layer 5 polycrystalline silicon layer 6 11 ¾ layer 7 hard photo curtain layer 8

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Claims (1)

A245375 Scope of patent application: · A flash memory type body prepared by using boron nano particles of oxalate, which includes at least: a substrate; a di-acid (HfSi〇4) thin film layer formed on the substrate; and 2 The gate electrode layer is formed on the hafnium silicate thin film layer. · According to the non-volatile flash memory produced by the lipase acid nanometer material described in item 1 of the scope of the patent application, wherein the substrate is a p-type si 丨 icon wafer 〇3 The non-volatile flash memory prepared by using oxalic acid for nano particles according to item 1 of the scope of patent application, wherein 'the substrate is placed in a vacuum environment. 4. Non-volatile flash memory prepared by using nano-silicate silicate particles as described in item 3 of the scope of the patent application, wherein the gas introduced into the vacuum environment is argon ... ^ plus ^^ and oxygen ㈠ "卯 心 仏). 5 · The non-volatile flash memory prepared by using nano-silicate silicate particles as described in item i of the patent application scope, wherein the method of preparing the osmium-silicate film layer is at least Containing: (a) Taking two kinds of leather materials: hafnium (Hf) and silicon (sj | icon, si), and applying the silicon to the silicon using a confocal sputtering method (co-sputtering) to plate the silicic acid.铪 Thin film layer; (b) Passing oxygen to the thin film layer under high vacuum (hjgh vacuum) through 900 ° C, 60 seconds rapid temperature annealing annealing process (Rapidly Temperature Anneamng, RTA) treatment, so that 1245375 Lithium oxalic acid generates nanocrystals to the thin film layer. 6 According to the non-volatile flash memory prepared by using nano silicate silicate particles as described in item 5 of the scope of the patent application, Density range is 0.9 ~ 1.9 X 1012 cm-2. 7 • According to item 5 of patent application scope The use of said hafnium silicate nano fine particles of preparing an non-volatile flash memory, wherein the nanocrystals in the grain size of less than 1 square nanometers (nm). 8 According to the non-volatile flash memory prepared by using nano-silicate silicate particles according to item 1 of the patent scope of Shenyang, wherein the thickness of the oxalic acid to the film layer is less than 30 Angstroms (A). 9, 9 According to the non-volatile flash memory prepared by using nano-silicate silicate particles as described in item 1 of the scope of the patent application, wherein the control gate layer is formed by using a thermal vapor method (The_ | CQater) The Shi Xi is thin on the layer. Sex Flash, 22 1245375-blOck ng ox 丨 de, using plasma-assisted chemical vapor deposition (PECVD) on the samarium silicate film layer, and 3P 〇 “—The control gate layer is formed on the barrier oxide layer. 2. A non-volatile flash memory prepared by using nano-silicate silicate particles as described in item 11 of the patent application scope, wherein , Yami II P-type silicon (P-typesilicon). M ^ 3, non-volatile flash memory prepared by using nano-silicate silicate particles as described in item (2) of the patent scope, among which, Two sides of the substrate are formed from one of an n + source and an n + drain. 4. Non-volatile prepared by using nanometer silicate particles as described in item i 丄 of the scope of patent application A flash memory, wherein the preparation method of the samarium silicate thin film layer includes at least: (a) taking two targets of samarium and silicon, and forming the samarium silicate thin film layer by physicochemical synthesis on the two targets; ; (b) The osmium silicate thin film layer is subjected to oxygen under high vacuum and subjected to a rapid temperature annealing process at 90 ° C. for 60 seconds, so that the osmium silicate thin film layer generates nanocrystals. > The non-volatile flash memory prepared by using nanometer silicate particles according to item 14 of the scope of patent application, wherein the physical-chemical synthesis method is an atomic layer chemical vapor deposition (atomic layer) chemical vapor deposition (ALCVD), high-density plasma chemical vapor deposition (High-Density Plasma Chemical 23 1245375 Vapor Depos 丨 tlon, HDpcvD), sputtering (s_te electron gun vacuum evaporation method (E-Gun) 6 / According to the application of the scope of the patent application No. 14 to the non-volatile flash memory prepared by the use of oxalic acid, wherein, the oxalic acid to. 'Special film layer system advance-step for self Chopped acid film layer and Shao acid. One of the alternatives. Sleepiness increase 7 / Non-volatile flash memory prepared by using shixi acid to give Taimi's pellets according to item 14 of the scope of patent application Among them, the density range of the body is Oj'i 9 χ 1012 cm-2. · 8, · Non-volatile prepared from tamarine particles according to the patent scope of item i 4 according to the patent application Sexual flash memory, wherein the particle size of the body I is less than 10 nanometers. Day 9, · According to the non-volatile flash memory prepared by using microcrystalline silicon silicate and particles as described in item i 1 of the scope of the patent application, the thickness of the oxalic acid two film layer is less than 30 angstroms. ° 〇 · According to the non-volatile flash memory prepared by using silicic acid for Tajimi particles as described in item 11 of the scope of the patent application, wherein the thickness of the second layer is 20 angstroms. According to the non-volatile flash memory prepared by using silicic acid for Xingmi particles as described in item ii of the scope of the patent application, wherein the through layer is a chemical vapor deposition oxide layer. Gas 2 According to the patent application The non-volatile flash memory prepared by using silicic acid for Qi Mi particles as described in the scope item 11, wherein the penetration & 24 1245375 layer is a high dielectric constant material. 11 The non-volatile flash memory prepared by the rosic acid described in item 1 to 6 meters of U-grains, wherein the thickness of the barrier layer is 40 Angstroms. 4, according to item 11 of the scope of patent application Non-volatile flash memory prepared using shixi acid for rice-recipient particles, where ' Resistance & The material of the layer is from oxide (Oxide), nitride (cj), milk, (Hf〇2), oxide (Zr02), oxide oxide (Al203) and lanthanum oxide (La2 〇3) One of the choices. 25. The non-volatile flash memory prepared by using nano-silicate silicate particles as described in item 11 of the scope of patent application, wherein the control gate layer uses A thermal evaporation method is formed on the hafnium silicate thin film layer. 26. According to the non-volatile flash memory prepared by using nano-silica silicate particles described in item 丄 丄 of the scope of the patent application, wherein the material of the control gate layer is aluminum, polycrystalline silicon, polycrystalline silicon germanium And metals 7 • Non-volatile flash memory prepared by using nanometer silicate particles as described in item i 1 of the scope of patent application, wherein the non-volatile flash memory prepared by using silicic acid for nanometer particles is The structure of the volatile flash memory is a Smcon Oxide Nitride OXide Silicon (Sonos) structure. 8 · A kind of non-volatile flash memory prepared by using nanometer silicate particles, which contains at least: 25 1245375 a substrate; a permeable oxide layer formed in the center of one end surface of the substrate; A thin film layer is formed on the penetrating oxide layer; 阻挡 a barrier oxide layer is formed on the samarium silicate film layer; * a polycrystalline stone layer is formed on the barrier oxide layer; and — A spacer layer is formed on both sides of the penetrating oxide layer, the hafnium silicate film layer, the far-blocking oxide layer, and the polycrystalline silicon layer. 29. The non-volatile flash memory prepared by using nano-silicate silicate particles as described in item 28 of the scope of the patent application, wherein the non-volatile flash memory prepared by using Shi Xi · nano-particles Flash memory is Single Dot Memory. 30. The non-volatile flash memory prepared by using oxalic acid for nano particles according to item 28 of the Shen Yanqing patent, tenth, the substrate 2 is structured with an insulating layer over silicon (S 丨 丨丨 con_〇n_ | nsu | at〇r, s structure. 3 1 ”According to the application of the scope of the patent application No. 28 to the non-volatile flash memory prepared with Nalu ^ particles, Wherein, the method for preparing the osmium acid osmium thin film layer includes at least: (a) taking two dry materials of yoshiba, and plating the arsenic silicate thin film by co-sputtering method to the yoshiba (B) Pass the oxygen to the thin saccharic acid layer under high vacuum, and pass _ C, 60 seconds of rapid heating and annealing treatment, so that the acid crystals produce nanocrystalline crystals. '26 1245375 2 · According to the non-volatile flash memory prepared by using silicic acid for Taimi particles as described on page 3 of the scope of the patent application, the density of the Tai = body is in the range of 0.9 to i 9 x 1 〇12 cm-2. "Day 3 3. According to ♦ please use the non-volatile flash memory prepared for hard-grained Taimi particles as described in item 31 of the patent, in which The particle size of the Y = body is less than 10 nanometers. 4 · The thickness of the thin film layer of the non-volatile flash memory prepared according to the Li-M grains described in item 28 of the patent application scope is less than 30 angstroms. Mono-acid: a non-volatile flash-penetrating oxide layer prepared by nano particles, which is formed on one of the silicon dioxide layer and the second stone layer; Formed on the layer-a layer of stone dioxide, a second silicon layer grows in the center of one end face of the silicon dioxide layer, a samarium silicate thin film layer on both sides of the end face is formed on the penetrating oxide layer;-hard cover A hard mask is formed on an end face between the penetrating oxide reed and the samarium silicate film layer; a blocking oxide layer is formed on the samarium silicate film layer; and a control gate The electrode layer is formed on the barrier oxide layer, and a part of the control gate layer is formed by a chemical mechanical polishing method (Chemical Cal Pohnjng, Cmp) to form a control gate. μ 27! 245375 6: Non-volatile flash memory prepared according to the Limi particles described in Item 35 of the scope of the patent application, wherein the thorn a shows acid to the non-volatile flash prepared by the nano particles The memory is Multi-bits Single Dot Memory. Xiwei 疋 7 is a non-volatile flash memory prepared by using shixi acid rice particles as described in Item 35 of the scope of the patent application, wherein 誃 7 does not have a structure of SOI. Conversely 8 · The non-volatile flash memory prepared by using osmium silicate rice particles as described in item 35 of the scope of the patent application, wherein the method for preparing the acid two thin film layer includes at least: '给 a) Two target materials of silicon, the hafnium and the silicon were plated with the hafnium silicate thin film layer by a co-aluminization method;, ","; (b) the hafnium silicate thin film layer was vented with oxygen under a high vacuum. 〇〇 C '60 seconds of rapid heating annealing process, so that the oxalic acid to the layer to produce nanocrystalline. J 9 · According to the scope of the application for the patent application No. 38 to the nanolumic particles prepared The non-volatile flash memory produced by the 'wherein, the density range of the nano crystal is 0A,] 9 χ 1012 Cm-2. Day 4 〇 · According to the use of the stone described in the 38th scope of the patent application Non-volatile flash memory prepared by nano acid for nano particles, wherein the particle size of the nano crystal is less than 10 nano. 4 1 · Using Shi Xi according to item 35 of the scope of patent application Non-volatile flash memory prepared by acid for nano particles, in which the oxalic acid is 28 1245375 The thickness of the thin film layer is less than 30 angstroms. 4 2 · The non-volatile flash memory prepared by using nano particles of oxalate acid as described in item 35 of the patent application scope, wherein the hard cover layer The material is silicon nitride (Si3N4). 29