[go: up one dir, main page]

TW229325B - - Google Patents

Info

Publication number
TW229325B
TW229325B TW082106685A TW82106685A TW229325B TW 229325 B TW229325 B TW 229325B TW 082106685 A TW082106685 A TW 082106685A TW 82106685 A TW82106685 A TW 82106685A TW 229325 B TW229325 B TW 229325B
Authority
TW
Taiwan
Prior art keywords
reactor
rare earth
erbium
doped
pump
Prior art date
Application number
TW082106685A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW229325B publication Critical patent/TW229325B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H10P32/12—
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3411—
    • H10P14/3446—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW082106685A 1992-08-31 1993-08-19 TW229325B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/940,416 US5322813A (en) 1992-08-31 1992-08-31 Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition

Publications (1)

Publication Number Publication Date
TW229325B true TW229325B (zh) 1994-09-01

Family

ID=25474795

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082106685A TW229325B (zh) 1992-08-31 1993-08-19

Country Status (11)

Country Link
US (3) US5322813A (zh)
EP (1) EP0586321B1 (zh)
JP (1) JPH0785467B2 (zh)
KR (1) KR970008339B1 (zh)
CN (3) CN1054234C (zh)
AT (1) ATE166491T1 (zh)
CA (1) CA2095449C (zh)
DE (1) DE69318653T2 (zh)
ES (1) ES2116426T3 (zh)
MX (1) MX9305267A (zh)
TW (1) TW229325B (zh)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873549A (en) * 1987-03-03 1989-10-10 Mita Industrial Co., Ltd. Device for detecting the life of an image forming process unit, opening of a seal of the unit and attachment of the unit to an image forming apparatus
EP0650200B1 (en) * 1993-10-20 1999-03-10 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Solid state electro-luminescent device and process for fabrication thereof
US6093246A (en) * 1995-09-08 2000-07-25 Sandia Corporation Photonic crystal devices formed by a charged-particle beam
US5976941A (en) * 1997-06-06 1999-11-02 The Whitaker Corporation Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates
US6130471A (en) * 1997-08-29 2000-10-10 The Whitaker Corporation Ballasting of high power silicon-germanium heterojunction biploar transistors
US6040225A (en) * 1997-08-29 2000-03-21 The Whitaker Corporation Method of fabricating polysilicon based resistors in Si-Ge heterojunction devices
KR100377716B1 (ko) * 1998-02-25 2003-03-26 인터내셔널 비지네스 머신즈 코포레이션 광학적 방사를 위해 희토류 원소로 도핑된 실리콘 구조체 및 방사방법
WO2000000811A2 (en) * 1998-06-29 2000-01-06 San Diego State University Foundation Method and apparatus for determination of carbon-halogen compounds and applications thereof
US6140669A (en) * 1999-02-20 2000-10-31 Ohio University Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission
US6143072A (en) * 1999-04-06 2000-11-07 Ut-Battelle, Llc Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate
US6255669B1 (en) * 1999-04-23 2001-07-03 The University Of Cincinnati Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element
KR100510996B1 (ko) * 1999-12-30 2005-08-31 주식회사 하이닉스반도체 선택적 에피텍셜 성장 공정의 최적화 방법
US6519543B1 (en) * 2000-05-09 2003-02-11 Agere Systems Inc. Calibration method for quantitative elemental analysis
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
KR100384892B1 (ko) * 2000-12-01 2003-05-22 한국전자통신연구원 에르븀이 도핑된 실리콘나노점의 형성 방법
US6853447B2 (en) * 2001-02-12 2005-02-08 Analytical Spectral Devices, Inc. System and method for the collection of spectral image data
US6894772B2 (en) * 2001-02-12 2005-05-17 Analytical Spectral Devices System and method for grouping reflectance data
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US6771369B2 (en) * 2002-03-12 2004-08-03 Analytical Spectral Devices, Inc. System and method for pharmacy validation and inspection
WO2004066345A2 (en) * 2003-01-22 2004-08-05 Group Iv Semiconductor Inc. Doped semiconductor nanocrystal layers and preparation thereof
US7440180B2 (en) * 2004-02-13 2008-10-21 Tang Yin S Integration of rare-earth doped amplifiers into semiconductor structures and uses of same
US7163878B2 (en) * 2004-11-12 2007-01-16 Texas Instruments Incorporated Ultra-shallow arsenic junction formation in silicon germanium
CN100385693C (zh) * 2005-08-18 2008-04-30 中国科学院半导体研究所 用等离子体处理提高硅基晶体薄膜发光的方法
DE102006031300A1 (de) * 2006-06-29 2008-01-03 Schmid Technology Systems Gmbh Verfahren zur Dotierung von Siliziummaterial für Solarzellen, entsprechend dotiertes Siliziummaterial und Solarzelle
US20080138955A1 (en) * 2006-12-12 2008-06-12 Zhiyuan Ye Formation of epitaxial layer containing silicon
JP5666433B2 (ja) * 2008-06-05 2015-02-12 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ランタニド含有前駆体の調製およびランタニド含有膜の堆積
US8269253B2 (en) * 2009-06-08 2012-09-18 International Rectifier Corporation Rare earth enhanced high electron mobility transistor and method for fabricating same
CN102828242B (zh) * 2012-09-06 2015-05-27 西安隆基硅材料股份有限公司 含有下转换发光量子点的晶体硅及其制备方法
US9481917B2 (en) * 2012-12-20 2016-11-01 United Technologies Corporation Gaseous based desulfurization of alloys
EP3027989B1 (en) * 2013-07-30 2018-02-28 Board of Regents, The University of Texas System Sample transfer to high vacuum transition flow
US9850573B1 (en) 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US10364259B2 (en) * 2016-12-30 2019-07-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same
US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
GB201812765D0 (en) * 2018-08-06 2018-09-19 Univ London Queen Mary Substrate layer
CN119640395B (zh) * 2025-02-13 2025-07-01 清华大学 二维单晶稀土化合物纳米片的制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten
US4385946A (en) * 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity
US4618381A (en) * 1983-05-26 1986-10-21 Fuji Electric Corporate Research And Development Ltd. Method for adding impurities to semiconductor base material
DE3319134A1 (de) * 1983-05-26 1985-05-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München Optoelektronisches bauelement, insbesondere eine laserdiode oder eine leuchtdiode
US4800173A (en) * 1986-02-20 1989-01-24 Canon Kabushiki Kaisha Process for preparing Si or Ge epitaxial film using fluorine oxidant
US4826288A (en) * 1987-04-09 1989-05-02 Polaroid Corporation, Patent Department Method for fabricating optical fibers having cores with high rare earth content
US5248890A (en) * 1989-05-13 1993-09-28 Forschungszentrum Julich Gmbh Valance specific lanthanide doped optoelectronic metal fluoride semiconductor device
US5296048A (en) * 1989-05-31 1994-03-22 International Business Machines Corporation Class of magnetic materials for solid state devices
FR2650704B1 (fr) * 1989-08-01 1994-05-06 Thomson Csf Procede de fabrication par epitaxie de couches monocristallines de materiaux a parametres de mailles differents
JPH042699A (ja) * 1990-04-18 1992-01-07 Mitsubishi Electric Corp 結晶成長方法
US5119460A (en) * 1991-04-25 1992-06-02 At&T Bell Laboratories Erbium-doped planar optical device
US5107538A (en) * 1991-06-06 1992-04-21 At&T Bell Laboratories Optical waveguide system comprising a rare-earth Si-based optical device
US5511946A (en) * 1994-12-08 1996-04-30 General Electric Company Cooled airfoil tip corner

Also Published As

Publication number Publication date
MX9305267A (es) 1994-02-28
CN1085353A (zh) 1994-04-13
CN1255736A (zh) 2000-06-07
JPH0785467B2 (ja) 1995-09-13
CN1054234C (zh) 2000-07-05
US5534079A (en) 1996-07-09
KR970008339B1 (ko) 1997-05-23
EP0586321A2 (en) 1994-03-09
CN1255735A (zh) 2000-06-07
EP0586321B1 (en) 1998-05-20
ES2116426T3 (es) 1998-07-16
DE69318653D1 (de) 1998-06-25
ATE166491T1 (de) 1998-06-15
JPH06177062A (ja) 1994-06-24
US5322813A (en) 1994-06-21
CN1117389C (zh) 2003-08-06
EP0586321A3 (en) 1996-03-27
CA2095449C (en) 1997-09-16
KR940004714A (ko) 1994-03-15
CN1114225C (zh) 2003-07-09
US5646425A (en) 1997-07-08
CA2095449A1 (en) 1994-03-01
DE69318653T2 (de) 1999-02-04

Similar Documents

Publication Publication Date Title
TW229325B (zh)
US5354387A (en) Boron phosphorus silicate glass composite layer on semiconductor wafer
JP2848647B2 (ja) 有機珪素化合物と三弗化窒素を用いた珪素含有被膜の製法
EP0440154B1 (en) Two step process for forming an oxide layer over a stepped surface of a semiconductor wafer
US6596343B1 (en) Method and apparatus for processing semiconductor substrates with hydroxyl radicals
US4975144A (en) Method of plasma etching amorphous carbon films
US6410463B1 (en) Method for forming film with low dielectric constant on semiconductor substrate
KR970052913A (ko) 인-시튜 sacvd와 pecvd 실리콘 산화막 사이의 강한 인터페이스 형성 방법
EP0421203B1 (en) An integrated circuit structure with a boron phosphorus silicate glass composite layer on semiconductor wafer and improved method for forming same
US7273525B2 (en) Methods for forming phosphorus- and/or boron-containing silica layers on substrates
US5693377A (en) Method of reducing carbon incorporation into films produced by chemical vapor deposition involving titanium organometallic and metal-organic precursor compounds
US4716050A (en) Chemical vapor deposition of aluminum on an activated surface
US6335277B2 (en) Method for forming metal nitride film
Alexandrov et al. Formation of silicon nitride films by remote plasma‐enhanced chemical vapour deposition
US5380399A (en) Method of treating semiconductor substrates
EP0227839A1 (en) Method of forming a thin film
US4933207A (en) Laser and thermal assisted chemical vapor deposition of mercury containing compounds
KR960036155A (ko) 피.엘.티. 박막 제조방법
JP3209167B2 (ja) 薄膜形成方法
KR950004149Y1 (ko) 기상 증착 장치
JP3461181B2 (ja) 有機アルミニウム化合物処理方法
GB2179930A (en) A method of depositing an epitaxial silicon layer

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent