TW202409166A - Light processing device - Google Patents
Light processing device Download PDFInfo
- Publication number
- TW202409166A TW202409166A TW112129809A TW112129809A TW202409166A TW 202409166 A TW202409166 A TW 202409166A TW 112129809 A TW112129809 A TW 112129809A TW 112129809 A TW112129809 A TW 112129809A TW 202409166 A TW202409166 A TW 202409166A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- processing chamber
- workpiece
- processing
- main
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/123—Treatment by wave energy or particle radiation
-
- H10P72/0402—
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/002—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ultraviolet light
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Polymers & Plastics (AREA)
- Toxicology (AREA)
- Medicinal Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
本發明係關於光處理裝置。The present invention relates to a light processing device.
先前,已知有將膜材料、玻璃板等(以下,有將處理對象物統稱為「工件」的狀況。)暴露於透過向氧照射紫外光而生成的臭氧,從而來進行工件的表面處理的技術。例如,在後述專利文獻1中,公開了利用由臭氧所致的氧化反應,對膜材料的表面進行改質處理的方法。另外,在後述專利文獻2中,公開了利用由臭氧所致的氧化反應,對玻璃板的表面進行洗淨處理的方法。
[先前技術]
[專利文獻]
Conventionally, it has been known to perform surface treatment of the workpiece by exposing film materials, glass plates, etc. (hereinafter, the object to be processed is generally referred to as the "workpiece") to ozone generated by irradiating ultraviolet light to oxygen. Technology. For example,
[專利文獻1]國際公開第2012/077553號 [專利文獻2]日本專利第5083318號公報 [Patent Document 1] International Publication No. 2012/077553 [Patent Document 2] Japanese Patent No. 5083318
[發明所欲解決之課題][The problem that the invention wants to solve]
近年來,透過將工件暴露於臭氧來處理工件表面的方法不僅用於膜材料的改質處理、玻璃板的清洗處理,還利用於構成薄型顯示器的液晶基板上之細微裝置的處理等。具體而言,例如,利用於由金屬層構成之薄膜電晶體的閘極電極表面的親水化處理中。In recent years, the method of treating the surface of a workpiece by exposing the workpiece to ozone has been used not only for the modification of film materials and the cleaning of glass plates, but also for the treatment of fine devices on liquid crystal substrates constituting thin displays. Specifically, for example, it is used to hydrophilize the surface of a gate electrode of a thin film transistor composed of a metal layer.
然而,在將半導體基板上、液晶基板上的金屬層暴露於臭氧而進行親水化處理的情況下,該金屬層的表面被親水化處理,並且逐漸被氧化而形成金屬氧化膜。尤其,當臭氧濃度過高時,促進金屬氧化膜的形成,在金屬層的表面形成的金屬氧化膜的厚度容易變大。However, when a metal layer on a semiconductor substrate or a liquid crystal substrate is exposed to ozone for hydrophilization, the surface of the metal layer is hydrophilized and gradually oxidized to form a metal oxide film. In particular, when the ozone concentration is too high, the formation of the metal oxide film is promoted, and the thickness of the metal oxide film formed on the surface of the metal layer tends to increase.
金屬氧化膜與被氧化前的金屬的物性不同,也取決於所使用的蝕刻溶液等,但一般來說,與被氧化前的金屬相比,反應性差,蝕刻速率慢。因此,金屬氧化膜形成得越厚,越容易產生無法透過蝕刻處理將裝置加工成所希望的形狀的問題。The physical properties of the metal oxide film are different from those of the metal before oxidation, and it also depends on the etching solution used, but in general, it is less reactive and has a slower etching rate than the metal before oxidation. Therefore, the thicker the metal oxide film is, the more likely it is that the device cannot be processed into the desired shape through etching.
在此,本發明者們為了抑制上述問題的發生,針對透過比以往的膜材料、玻璃板的處理中之臭氧濃度低的臭氧濃度進行處理的方法進行了研究。Here, in order to suppress the occurrence of the above-mentioned problems, the present inventors studied a method of performing treatment by transmitting an ozone concentration lower than that in the treatment of conventional membrane materials and glass plates.
然而,本發明者們等嘗試將處理室內的臭氧濃度控制得比以往低來實施工件的處理,結果臭氧濃度在所希望的範圍內並不穩定,多發生不能允許之程度的處理不均,能夠正常處理的工件非常少。However, the inventors of the present invention have attempted to control the ozone concentration in the processing chamber to be lower than before to achieve the processing of the workpieces. As a result, the ozone concentration was not stable within the desired range, and unacceptable processing unevenness often occurred, and very few workpieces could be processed normally.
本發明係有鑑於前述課題,目的為提供即使在使處裡室內的臭氧濃度降低而進行了工件的處理的情況下,也能夠穩定且均質地進行處理的光處理裝置。 [用以解決課題之手段] The present invention is made in view of the above-mentioned problem, and its purpose is to provide a light processing device that can perform processing stably and uniformly even when the ozone concentration in the processing room is reduced to process the workpiece. [Means for solving the problem]
本發明的光照射裝置,其特徵為具備: 搬送機構,係搬送前述工件,具有複數搬送滾筒; 主處理室,係具有搬入藉由前述搬送機構搬送的前述工件的第一搬入口,與搬出前述工件的第一搬出口; 分隔構件,係在前述主處理室內,在與前述工件的搬送方向和前述搬送滾筒的旋轉軸方向正交的方向上,將前述複數搬送滾筒之間的至少一部分劃分為處理空間與滯留空間; 紫外光源,係配置於前述主處理室的前述處理空間內,朝向沿著前述搬送機構搬送的前述工件的一面,出射主要發光波長為200nm以下的紫外光; 氣體導入口,係向前述主處理室內導入加工氣體;及 搬入副處理室,係具有搬入所搬送的前述工件的第二搬入口,與搬出前述工件的第二搬出口,前述第二搬出口連通於前述第一搬入口; 前述搬送滾筒的至少一部分位於比前述分隔構件靠前述處理空間側的位置。 The light irradiation device of the present invention is characterized by comprising: a conveying mechanism for conveying the workpiece and having a plurality of conveying rollers; a main processing chamber having a first inlet for carrying in the workpiece conveyed by the conveying mechanism and a first outlet for carrying out the workpiece; a partition member for dividing at least a portion between the plurality of conveying rollers into a processing space and a retention space in a direction orthogonal to the conveying direction of the workpiece and the direction of the rotation axis of the conveying roller in the main processing chamber; an ultraviolet light source disposed in the processing space of the main processing chamber and emitting ultraviolet light having a main emission wavelength of less than 200 nm toward one side of the workpiece conveyed along the conveying mechanism; a gas inlet for introducing processing gas into the main processing chamber; and The secondary processing chamber is provided with a second loading port for loading the workpiece to be transported and a second loading port for unloading the workpiece, and the second loading port is connected to the first loading port; At least a part of the transport drum is located closer to the processing space than the partition member.
於本說明書中「主要發光波長」係指在發射光譜上規定對於某波長λ±10nm的波長區域Z(λ)之狀況中,對於發射光譜內的總積分強度顯示40%以上的積分強度的波長區域Z(λi)之波長λi。In this specification, "main emission wavelength" refers to a wavelength that exhibits an integrated intensity of more than 40% of the total integrated intensity in the emission spectrum in a wavelength region Z (λ) specified for a certain wavelength λ ± 10 nm in the emission spectrum. The wavelength λi of area Z(λi).
在本說明書中,「加工氣體」是指將惰性氣體和在臭氧的生成中所使用之含氧氣體混合而生成的混合氣體。In this specification, "process gas" refers to a mixed gas produced by mixing an inert gas and an oxygen-containing gas used to generate ozone.
在本說明書中,搬入口與搬出口「連通」是指在工件的搬送方向上至少一部分連續地連接的狀態。例如,可以設想使主處理室與搬入副處理室接觸,將第一搬入口與第二搬出口連續地連接的狀態、或經由連結部件連續地連接的狀態等。In this specification, the "connection" between the import port and the transport port refers to a state in which at least part of them are continuously connected in the conveyance direction of the workpiece. For example, it is conceivable that the main processing chamber and the loading sub-processing chamber are brought into contact, and the first loading port and the second loading port are continuously connected, or a state is continuously connected via a connecting member.
分隔構件並不需要是將主處理室內的空間完全分離成處理空間與滯留空間的部件,部分地連通處理空間與滯留空間亦可。但是,在從處理空間側朝向滯留空間側觀察時,相對於分隔構件整體的面積,未配置有分隔構件及搬送機構的區域的面積的合計為10%以下為佳,6%以下更理想。The partitioning member does not need to be a member that completely separates the space in the main processing chamber into a processing space and a retention space, and may partially connect the processing space and the retention space. However, when viewed from the processing space side toward the retention space side, the total area of the area where the partitioning member and the transport mechanism are not arranged is preferably 10% or less, and more preferably 6% or less relative to the entire area of the partitioning member.
另外,關於該分隔構件的具體構成,在「實施方式」的項目中一邊參照圖式一邊進行說明。再者,分隔構件不僅可以設置在主處理室中,追加設置在搬入副處理室中亦可。The specific structure of the partition member will be described in the section "Embodiment" with reference to the drawings. The partition member may be installed not only in the main processing chamber but also in the loading sub-processing chamber.
本發明者們注意到,在要透過比先前低之臭氧濃度來處理工件的情況下,由於存在於外側的氣體(以下,有稱為「外部氣體」的狀況。)流入處理空間內而導致臭氧濃度的相對變動變大,因此無法進行穩定的處理。又,本發明者們還注意到,在將處理室的內部空間整體作為處理空間的情況下,由於自然對流,臭氧難以停留在工件周邊,產生工件未被處理的情況。再者,由於臭氧難以停留在工件周邊,臭氧濃度越低,越容易產生工件未被處理的現象。The inventors of the present invention noticed that when a workpiece is processed with an ozone concentration lower than before, the gas existing outside (hereinafter referred to as "external gas") flows into the processing space and causes ozone. The relative fluctuation in concentration becomes large, so stable processing cannot be performed. Furthermore, the present inventors also noticed that when the entire internal space of the processing chamber is used as the processing space, ozone is difficult to stay around the workpiece due to natural convection, and the workpiece may not be processed. Furthermore, since it is difficult for ozone to stay around the workpiece, the lower the ozone concentration, the easier it is for the workpiece to remain unprocessed.
因此,根據前述光處理裝置的構成,由於主處理室的第一搬入口連通於搬入副處理室的第二搬出口,因此外部氣體最初從第二搬入口流入搬入副處理室內。亦即,搬入副處理室具有作為緩衝空間的功能,抑制外部氣體直接從第一搬入口流入。Therefore, according to the structure of the optical processing apparatus described above, since the first import port of the main processing chamber communicates with the second import port of the import sub-processing chamber, external air initially flows into the import sub-processing chamber from the second import port. That is, the import sub-processing chamber functions as a buffer space and suppresses external air from directly flowing in from the first import port.
再者,存在於搬入副處理室內的氣體是主處理室的處理空間內的氣體與外部氣體混合而成的混合氣體。因此,在將工件搬入主處理室內時,搬入副處理室內的氣體流入主處理室內,但與外部氣體直接流入的情況相比,該氣體對處理空間內的臭氧濃度的影響較小。In addition, the gas present in the transport sub-processing chamber is a mixed gas in which the gas in the processing space of the main processing chamber and the external air are mixed. Therefore, when the workpiece is moved into the main processing chamber, the gas moved into the sub-processing chamber flows into the main processing chamber, but this gas has less influence on the ozone concentration in the processing space than when the external air flows directly into the main processing chamber.
另外,在主處理室內生成的臭氧的絕大多數藉由分隔構件,抑制了通過搬送滾筒而移動至滯留空間側。In addition, most of the ozone generated in the main processing chamber is suppressed by the partition member from passing through the conveyor drum and moving to the stagnation space side.
也就是說,前述構成的光處理裝置相較於外部氣體直接流入主處理室內的構成,可抑制主處理室內的臭氧濃度的變動,且在處理空間內生成的臭氧容易停留在工件周邊。所以,前述構成的光處理裝置相較於先前的光處理裝置,即使是較低的臭氧濃度,也能夠穩定且均質地處理工件整體。That is to say, compared with a structure in which external air flows directly into the main processing chamber, the optical processing device having the above-mentioned structure can suppress the fluctuation of the ozone concentration in the main processing chamber, and the ozone generated in the processing space can easily stay around the workpiece. Therefore, the light processing device having the above structure can stably and uniformly process the entire workpiece even at a lower ozone concentration than the previous light processing device.
前述光處理裝置亦可構成為具備: 至少一個主排氣口,係將前述主處理室內的氣體排出; 至少一個第一副排氣口,係將前述搬入副處理室內的氣體排出;及 排氣控制機構,係控制從前述主排氣口及前述第一副排氣口排出的氣體的量; 前述排氣控制機構,係以使每單位時間從前述主排氣口排出的氣體的總量比從前述第一副排氣口排出的氣體的總量少之方式進行控制亦可。 The aforementioned light processing device may also be configured to include: At least one main exhaust port is used to discharge the gas in the aforementioned main processing chamber; At least one first auxiliary exhaust port is used to discharge the aforementioned gas moved into the auxiliary treatment chamber; and An exhaust control mechanism controls the amount of gas discharged from the aforementioned main exhaust port and the aforementioned first auxiliary exhaust port; The exhaust gas control mechanism may control the total amount of gas exhausted from the main exhaust port per unit time to be smaller than the total amount of gas exhausted from the first auxiliary exhaust port.
透過採用前述構成,搬入副處理室內的氣壓比主處理室的處理空間內的氣壓低。透過形成此種氣壓關係,可抑制從搬入副處理室的第二搬入口流入的外部氣體流入主處理室的處理空間內。所以,光處理裝置在處理工件的過程中的主處理室的處理空間內的臭氧濃度的變動進一步變小,能夠更加均質地處理工件整體。By adopting the above-mentioned structure, the air pressure in the sub-processing chamber is lower than the air pressure in the processing space of the main processing chamber. By forming such an air pressure relationship, it is possible to suppress the external gas flowing in from the second carrying port into the sub-processing chamber from flowing into the processing space of the main processing chamber. Therefore, the variation of the ozone concentration in the processing space of the main processing chamber during the process of processing the workpiece by the optical processing device is further reduced, and the entire workpiece can be processed more uniformly.
前述光處理裝置亦可具備: 搬出副處理室,係形成搬入沿著前述搬送機構搬送的前述工件搬入的第三搬入口與搬出前述工件的第三搬出口,前述第三搬入口連接於前述第一搬出口。 The aforementioned light processing device may also be equipped with: The sub-processing chamber is formed with a third carry-in port for loading in the workpieces conveyed along the transport mechanism and a third carry-out port for carrying out the workpieces. The third carry-in port is connected to the first carry-out port.
進而,前述光處理裝置亦可構成為具備: 至少一個主排氣口,係將前述主處理室內的氣體排出; 至少一個第一副排氣口,係將前述搬入副處理室內的氣體排出; 至少一個第二副排氣口,係將前述搬出副處理室內的氣體排出;及 排氣控制機構,係控制從前述主排氣口、前述第一副排氣口及前述第二副排氣口排出的氣體的量; 前述排氣控制機構,係以使每單位時間從前述主排氣口排出的氣體的總量比從前述第一副排氣口排出的氣體的總量少,且比從前述第二副排氣口排出的氣體的總量少之方式進行控制。 Furthermore, the aforementioned light processing device may also be configured to include: At least one main exhaust port is used to discharge the gas in the aforementioned main processing chamber; At least one first auxiliary exhaust port is used to discharge the aforementioned gas moved into the auxiliary processing chamber; At least one second auxiliary exhaust port is used to discharge the gas moved out of the auxiliary processing chamber; and An exhaust control mechanism controls the amount of gas discharged from the aforementioned main exhaust port, the aforementioned first auxiliary exhaust port, and the aforementioned second auxiliary exhaust port; The exhaust gas control mechanism is configured to make the total amount of gas exhausted from the main exhaust port per unit time smaller than the total amount of gas exhausted from the first auxiliary exhaust port, and smaller than the total amount of gas exhausted from the second auxiliary exhaust port. The total amount of gas discharged from the port is controlled in such a way that it is small.
由於第一搬出口是將工件從主處理室內朝向外側搬出的開口,因此與搬入工件的第一搬入口相比,主處理室內的氣體容易與工件一同向外側漏出。這種氣體從主處理室內的漏出很可能成為處理空間內的臭氧濃度發生紊亂的重要原因。又,存在不少從第一搬出口流入的外部氣體,雖然其與第一搬入口相比很少。Since the first unloading port is an opening for unloading workpieces from the main processing chamber to the outside, the gas in the main processing chamber is more likely to leak to the outside together with the workpieces than the first unloading port for loading the workpieces. The leakage of this gas from the main treatment chamber is likely to be an important cause of disturbance in the ozone concentration in the treatment space. In addition, there is a lot of outside air flowing in from the first outlet, although it is small compared with the first outlet.
因此,透過採用前述構成,可進一步抑制從第一搬出口側流入的外部氣體的影響。所以,光處理裝置在處理工件的過程中的主處理室的處理空間內的臭氧濃度的變動進一步變小,能夠更加均質地處理工件整體。Therefore, by adopting the above-mentioned structure, the influence of the outside air flowing in from the first outlet side can be further suppressed. Therefore, the optical processing apparatus can further reduce the fluctuation of the ozone concentration in the processing space of the main processing chamber during processing of the workpiece, and can process the entire workpiece more uniformly.
前述光處理裝置亦可具備: 抽氣管,係具有配置於前述處理空間內的取入口與配置於前述處理空間外的排出口,從前述取入口抽出前述處理空間內的氣體;及 濃度計,係連接於前述抽氣管的前述排出口,測定從前述排出口流入之氣體的臭氧濃度。 The aforementioned light treatment device may also be equipped with: an exhaust pipe having an inlet disposed in the aforementioned treatment space and an outlet disposed outside the aforementioned treatment space, and extracting the gas in the aforementioned treatment space from the aforementioned inlet; and a concentration meter connected to the aforementioned outlet of the aforementioned exhaust pipe, and measuring the ozone concentration of the gas flowing in from the aforementioned outlet.
於前述光處理裝置中, 前述抽氣管具備複數前述取入口; 複數前述取入口,係沿著前述搬送滾筒的旋轉軸方向排列亦可。 In the aforementioned light processing device, the aforementioned exhaust pipe is provided with a plurality of aforementioned inlets; the plurality of aforementioned inlets may be arranged along the direction of the rotation axis of the aforementioned conveying drum.
透過採用前述構成,在發生某些異常、主處理室內的臭氧濃度超過了規定的範圍的情況下、或儘管搬入了工件但臭氧濃度未到達規定的範圍的情況下等,可緊急停止光處理裝置。又,在該構成中,由於可記錄主處理室內的臭氧濃度的變化,因此,例如在處理完畢的工件中發生了不良的情況下,可確認、分析在光處理裝置所致的處理中是否發生了異常。By adopting the above-mentioned structure, when some abnormality occurs, the ozone concentration in the main processing chamber exceeds the predetermined range, or the ozone concentration does not reach the predetermined range despite loading the workpiece, the light processing device can be stopped urgently. . Furthermore, in this configuration, since changes in the ozone concentration in the main processing chamber can be recorded, for example, when a defect occurs in a processed workpiece, it can be confirmed and analyzed whether it occurred during processing by the optical processing device. Exception.
前述光處理裝置亦可具備: 加工氣體控制部,係基於前述濃度計所測定的臭氧濃度,控制從前述氣體導入口導入至前述主處理室內之加工氣體的流量。 The aforementioned light processing device may also be equipped with: The processing gas control unit controls the flow rate of the processing gas introduced from the gas inlet into the main processing chamber based on the ozone concentration measured by the concentration meter.
前述光處理裝置亦可具備: 電力控制部,係基於前述濃度計所測定的臭氧濃度,控制向前述紫外光源供給的電力。 The aforementioned light processing device may also be equipped with: The power control unit controls the power supplied to the ultraviolet light source based on the ozone concentration measured by the densitometer.
透過採用前述構成,可監視主處理室之處理空間內的臭氧濃度,進而可進行回饋控制,以使處理空間內的臭氧濃度穩定在所希望的濃度。所以,光處理裝置在處理工件的過程中的主處理室的處理空間內的臭氧濃度的變動進一步變小,能夠更加均質地處理工件整體。 [發明的效果] By adopting the above structure, the ozone concentration in the processing space of the main processing chamber can be monitored, and feedback control can be performed to stabilize the ozone concentration in the processing space at a desired concentration. Therefore, the optical processing apparatus can further reduce the fluctuation of the ozone concentration in the processing space of the main processing chamber during processing of the workpiece, and can process the entire workpiece more uniformly. [Effects of the invention]
依據本發明,可實現即使在使處裡室內的臭氧濃度降低而進行了工件的處理的情況下,也能夠穩定且均質地進行處理的光處理裝置。According to the present invention, it is possible to realize a light processing device that can perform processing stably and uniformly even when processing a workpiece with the ozone concentration in the processing room being reduced.
[裝置構成][Device structure]
以下,針對本發明的光處理裝置,參照圖式來進行說明。再者,關於光處理裝置的以下的各圖式都是示意圖示者,圖式上的尺寸比及個數與實際的尺寸比及個數不一定一致。The light processing device of the present invention is described below with reference to the drawings. In addition, the following drawings of the light processing device are schematic illustrations, and the size ratios and numbers in the drawings are not necessarily consistent with the actual size ratios and numbers.
又,以下,在說明光處理裝置的構成的基礎上,有具體特定工件而進行說明的狀況。然而,本發明的光處理裝置作為對象的工件並不限定於以下的說明中所特定的工件。In addition, in the following description of the configuration of the light processing device, a workpiece is specifically specified and described. However, the workpiece that the light processing device of the present invention is targeted at is not limited to the workpiece specified in the following description.
(光處理裝置1)
圖1係從Y方向觀察光處理裝置的一實施方式時的示意圖,圖2係圖1的處理空間A1周邊的放大圖。如圖1所示,光處理裝置1具備主處理室2、搬入副處理室3、搬出副處理室4、由複數搬送滾筒5a構成的搬送機構5、加工氣體控制部10、氣體供給源11以及排氣控制部12。再者,排氣控制部12是一個控制部,但為了方便圖示,分成複數個進行圖示。
(Light processing device 1)
FIG. 1 is a schematic diagram of an embodiment of the optical processing device viewed from the Y direction, and FIG. 2 is an enlarged view of the periphery of the processing space A1 in FIG. 1 . As shown in FIG. 1 , the
在以下的說明中,如圖1所示,將工件W1的搬送方向設為X方向,將搬送機構5所具備之搬送滾筒5a的旋轉軸方向設為Y方向,將與XY平面正交的方向設為Z方向。In the following description, as shown in FIG. 1 , the conveying direction of the workpiece W1 is defined as the X direction, the rotation axis direction of the conveying
又,在表現方向時區別正負的方向時,如「+Z方向」、「-Z方向」般,附加正負的符號記載,不區別正負的方向來表現方向時,僅記載為「Z方向」。In addition, when expressing a direction by distinguishing between positive and negative directions, such as "+Z direction" and "-Z direction", positive and negative symbols are added and described. When a direction is expressed without distinguishing between positive and negative directions, it is simply described as "Z direction".
如圖1所示,在光處理裝置1中,朝向+X方向,依次排列有搬入副處理室3、主處理室2、搬出副處理室4。如圖1所示,搬送機構5將載置於搬送滾筒5a上的工件W1向+X方向搬送。As shown in FIG. 1 , in the
如圖2所示,搬入副處理室3與主處理室2以相互接觸的方式配置,後述的第一搬入口2a與第二搬出口3b連通。又,主處理室2與搬出副處理室4以相互接觸的方式配置,後述的第一搬出口2b與第三搬入口4a連通。As shown in Fig. 2, the
如圖2所示,加工氣體控制部10具備測定處理空間A1內之氣氛氣體的臭氧濃度的濃度計10a。濃度計10a測定藉由抽氣管22抽出的主處理室2內之氣氛氣體G2的臭氧濃度。然後,如圖1所示,加工氣體控制部10基於由濃度計10a測定的臭氧濃度,對氣體供給源11輸出包括與加工氣體G1之流量相關的資訊的控制信號d1。另外,加工氣體控制部10與濃度計10a也可以分體構成。As shown in FIG2 , the process
氣體供給源11基於從加工氣體控制部10輸入的控制信號d1,向主處理室2的配置有紫外光源20的處理空間A1內,以指定的流量供給加工氣體G1。The
本實施形態中的加工氣體G1是含有氧氣與氮氣的混合氣體,典型來說不是空氣。再者,作為加工氣體G1,例如也可以採用混合了CDA(乾淨乾燥空氣)與氮氣的混合氣體。本實施形態中的加工氣體G1以氧的含有率為0.1%,氮的含有率為99.9%之方式進行調整。The processing gas G1 in this embodiment is a mixed gas containing oxygen and nitrogen, and is typically not air. Furthermore, as the processing gas G1, for example, a mixed gas of CDA (clean dry air) and nitrogen may be used. The processing gas G1 in this embodiment is adjusted so that the oxygen content is 0.1% and the nitrogen content is 99.9%.
(主處理室2)
如圖1所示,主處理室2具備複數紫外光源20、配管21、抽氣管22、主排氣口2c、分隔構件2p以及排氣用風扇2f。在主處理室2中收容有搬送機構5的一部分。然後,如圖2所示,在主處理室2的壁面上設有在X方向上對向的第一搬入口2a與第一搬出口2b,構成為工件W1從第一搬入口2a搬入,從第一搬出口2b搬出。
(Main processing chamber 2)
As shown in FIG1 , the
如圖2所示,紫外光源20是對藉由搬送機構5搬送的工件W1照射紫外光的光源。本實施形態中的紫外光源20是在管體內封入含有氙(Xe)氣的發光氣體,並透過從電源部(未圖示)施加電壓而出射主要發光波長為172nm的紫外光的準分子燈。As shown in FIG. 2 , the
紫外光源20以在Z方向上與藉由搬送機構5搬送的工件W1的間隔距離為10mm以下之方式配置。The ultraviolet
再者,紫外光源20只要是可出射主要發光波長為200nm以下的紫外光的光源,採用準分子燈以外的光源亦可。又,即使在採用準分子燈的情況下,也可以採用封入有含有氙(Xe)氣以外之氣體的發光氣體的準分子燈。Furthermore, the
又,本實施形態中的準分子燈是以與管軸正交的面切斷時的形狀呈矩形狀的準分子燈,且為呈也被稱為扁平管形狀的準分子燈,但也可以採用呈扁平管形狀以外的形狀(例如被稱為單管形狀、雙重管形狀的形狀)的準分子燈。In addition, the excimer lamp in this embodiment is an excimer lamp that has a rectangular shape when cut along a plane orthogonal to the tube axis, and is also called a flat tube shape, but it may also be An excimer lamp having a shape other than a flat tube shape (for example, a shape called a single tube shape or a double tube shape) is used.
配管21是將從氣體供給源11供給的加工氣體G1導向主處理室2內的構件。在本實施形態中,如圖2所示,配管21的一部分分歧,成為從複數氣體導入口21a供給加工氣體G1的構成。再者,關於配管21的構成或形狀、設置氣體導入口21a的數量等,考慮主處理室2的大小、內部構造等而決定。例如,也可以在X方向上,在主處理室2的中央部側即燈管20之間的空間進一步設置配管21。The piping 21 is a member that guides the processing gas G1 supplied from the
在此,如圖2所示,在本實施形態中,配置於搬入副處理室3側的配管21構成為向+X方向噴射加工氣體G1,並且也向-Z方向噴射加工氣體G1。根據該構成,可抑制伴隨著工件W1的搬入之包含外部氣體的氣體從搬入副處理室3向主處理室2流入。Here, as shown in Fig. 2, in this embodiment, the
圖3是從X方向觀察主處理室2時的圖式。如圖1~圖3所示,在抽氣管22中,配置於主處理室2內的一端部即取入口22a配置於處理空間A1內,另一端部即排出口22b連接於加工氣體控制部10所具備之測定臭氧濃度的濃度計10a。藉由該構成,抽氣管22將處理空間A1內的含有臭氧的氣氛氣體G2導向濃度計10a。FIG. 3 is a diagram of the
取入口22a也可以配置於處理空間A1內的任意的位置,但在本實施形態中,為了更準確地監視工件W1周邊的臭氧濃度是否處於所希望的範圍內,在Z方向上配置於與紫外光源20的光出射面20a相同的位置。The
如圖3所示,本實施形態的抽氣管22設有合流部22c,複數取入口22a在Y方向上等間隔地排列。再者,在主處理室2足夠小、透過從一處吸引處理空間A1內的氣氛氣體G2,可穩定地測量臭氧濃度的情況下,抽氣管22不具備合流部22c,取入口22a僅為一個亦可。As shown in Fig. 3, the
如圖1所示,主排氣口2c是將主處理室2內的氣氛氣體G2向主處理室2的外側排出的排氣口。在本實施形態中,藉由排氣控制部12控制排氣用風扇2f的轉速來調整從主排氣口2c排出的氣氛氣體G2的量。1, the
圖4A是示意揭示主處理室2內之搬送機構5的構成的立體圖,圖4B是從+Z側觀察圖4A的搬送機構5時的圖式,圖4C是從Y方向觀察圖4A的搬送機構5時的圖式。如圖4A~圖4C所示,分隔構件2p形成有與複數搬送滾筒5a分別對應的複數孔2pb,透過在孔2pb中插通搬送滾筒5a的狀態下進行固定,從而將主處理室2內的空間在Z方向上劃分為處理空間A1與滯留空間A2。而且,如圖4C所示,搬送滾筒5a的一部分比分隔構件2p的主面2pa更向+Z側突出,由此工件W1不被分隔構件2p阻擋地向X方向搬送。FIG. 4A is a perspective view schematically showing the structure of the conveying
再者,雖然僅為一例,但本實施形態中的分隔構件2p的大小為(X,Y)=(280mm,3400mm)。另外,設於分隔構件2p的孔2pb的大小為(X,Y)=(28mm,13mm),一個搬送滾筒5a的直徑為45mm,Y方向的長度為11mm。而且,在主處理室2內配置有60個搬送滾筒5a。Furthermore, although this is only an example, the size of the
(搬入副處理室3)
如圖1所示,搬入副處理室3具備複數副排氣口(3c1、3c2)和分隔構件3p,收容有搬送機構5的一部分。而且,如圖1所示,在搬入副處理室3的壁面設有在X方向上對向的第二搬入口3a與第二搬出口3b,工件W1從第二搬入口3a搬入,從第二搬出口3b搬出。
(Move into sub-processing room 3)
As shown in FIG. 1 , the
如圖1所示,在搬入副處理室3中設有分隔構件3p,內側的空間被劃分為搬送機構5的+Z側的空間B1和-Z側的空間B2。As shown in FIG. 1 , the
副排氣口3c1是用以吸引存在於空間B1內之氣氛氣體G3並向搬入副處理室3的外側排氣的開口。The sub-exhaust port 3c1 is an opening for sucking in the atmospheric gas G3 existing in the space B1 and exhausting it to the outside of the
副排氣口3c2是用以吸引存在於空間B2內之氣氛氣體G3並向搬入副處理室3的外側排氣的開口。The sub-exhaust port 3c2 is an opening for sucking in the atmospheric gas G3 existing in the space B2 and exhausting it to the outside of the
本實施形態中的副排氣口(3c1、3c2)是將存在於搬入副處理室3之內側的氣氛氣體G3向外側排氣的開口,均相當於第一副排氣口。The auxiliary exhaust ports (3c1, 3c2) in this embodiment are openings for exhausting the atmospheric gas G3 existing inside the
如圖1所示,在副排氣口(3c1、3c2)的每一個上設有用於排出搬入副處理室3內的氣氛氣體G3的排氣用風扇3f,透過排氣控制部12控制排氣用風扇3f的轉速,調整對搬入副處理室3內的氣氛氣體G3進行排氣的量。As shown in FIG. 1 , each of the auxiliary exhaust ports (3c1, 3c2) is provided with an
再者,排氣控制部12以使每單位時間從主排氣口2c排出的氣氛氣體G2的量比從副排氣口(3c1、3c2)排出的氣氛氣體G3的總量少之方式控制排氣用風扇3f。藉此,搬入副處理室3的空間B1的氣壓比主處理室2的處理空間A1的氣壓低,可抑制氣氛氣體G3從搬入副處理室3流入主處理室2。Furthermore, the
在本實施形態中,調整為從主排氣口2c每單位時間排出的氣氛氣體G2的量為10L/min,從副排氣口(3c1、3c2)每單位時間排出的氣氛氣體G3的量為950L/min。也就是說,以每單位時間從主排氣口2c排出的氣氛氣體G2的總量比從副排氣口(3c1、3c2)排出的氣氛氣體G3的總量少之方式進行控制。In this embodiment, the amount of ambient gas G2 discharged from the
(搬出副處理室4)
如圖1所示,搬出副處理室4具備複數第二副排氣口(4c1、4c2)與分隔構件4p,收容有搬送機構5的一部分。而且,如圖1所示,在搬出副處理室4的壁面上設有在X方向上對向的第三搬入口4a與第三搬出口4b,工件W1從第三搬入口4a搬入,從第三搬出口4b搬出。
(Carry-out sub-processing chamber 4)
As shown in FIG. 1 , the carry-out
如圖1所示,在搬出副處理室4中設有分隔構件4p,內側的空間被劃分為搬送機構5的+Z側的空間C1與-Z側的空間C2。As shown in FIG. 1 , a
副排氣口4c1是用以吸引存在於空間C1內的氣氛氣體G4並向搬出副處理室4的外側排氣的開口。The sub-exhaust port 4c1 is an opening for sucking in the atmospheric gas G4 existing in the space C1 and exhausting it out of the
副排氣口4c2是用以吸引存在於空間C2內的氣氛氣體G4並向搬出副處理室4的外側排氣的開口。The sub-exhaust port 4c2 is an opening for sucking the atmospheric gas G4 existing in the space C2 and exhausting it to the outside of the
本實施形態中的副排氣口(4c1、4c2)是將存在於搬出副處理室4的內側的氣氛氣體G4向外側排氣的開口,均相當於第二副排氣口。The auxiliary exhaust ports (4c1, 4c2) in this embodiment are openings for exhausting the atmospheric gas G4 existing inside the unloading
如圖1所示,在副排氣口(4c1、4c2)的每一個上設有用於排出搬出副處理室4內的氣氛氣體G4的排氣用風扇4f,排氣控制部12控制排氣用風扇4f的轉速,調整對搬出副處理室4內的氣氛氣體G4進行排氣的量。As shown in Figure 1, an
在本實施形態中,以從副排氣口(4c1、4c2)每單位時間排出的氣氛氣體G4的量為950L/min之方式進行調整。也就是說,以每單位時間從主排氣口2c排出的氣氛氣體G2的總量比從副排氣口(4c1、4c2)排出的氣氛氣體G4的總量少之方式進行控制。In this embodiment, the amount of ambient gas G4 discharged from the auxiliary exhaust ports (4c1, 4c2) per unit time is adjusted so that it becomes 950 L/min. That is, it is controlled so that the total amount of the atmosphere gas G2 discharged from the
每單位時間從副排氣口(3c1、3c2)排出的氣氛氣體G3的總量和從副排氣口(4c1、4c2)排出的氣氛氣體G4的總量如本實施形態般設定為相同為佳。更詳細地說,每單位時間從副排氣口3c1排出的氣氛氣體G3和從副排氣口4c1排出的氣氛氣體G4的量相同,並且每單位時間從副排氣口3c2排出的氣氛氣體G3和從副排氣口4c2排出的氣氛氣體G4的量相同為佳。但是,從各個排氣口(3c1、3c2、4c1、4c2)排出的氣氛氣體(G3、G4)的量各不相同亦可。It is preferred that the total amount of the atmosphere gas G3 discharged from the auxiliary exhaust ports (3c1, 3c2) and the total amount of the atmosphere gas G4 discharged from the auxiliary exhaust ports (4c1, 4c2) are set to be the same as in the present embodiment. More specifically, it is preferred that the amount of the atmosphere gas G3 discharged from the auxiliary exhaust port 3c1 and the amount of the atmosphere gas G4 discharged from the auxiliary exhaust port 4c1 are the same per unit time, and it is preferred that the amount of the atmosphere gas G3 discharged from the auxiliary exhaust port 3c2 and the amount of the atmosphere gas G4 discharged from the auxiliary exhaust port 4c2 are the same per unit time. However, the amount of the atmosphere gas (G3, G4) discharged from each exhaust port (3c1, 3c2, 4c1, 4c2) may be different.
再者,排氣控制部12以使每單位時間從主排氣口2c排出的氣氛氣體G2的量比從副排氣口(4c1、4c2)排出的氣氛氣體G4的總量少之方式控制排氣用風扇4f,。藉此,搬出副處理室4的空間C1的氣壓比主處理室2的處理空間A1的氣壓低,可抑制氣氛氣體G4從搬出副處理室4流入主處理室2。Furthermore, the exhaust
[驗證實驗]
在此,由於實施了確認本實施形態的光處理裝置1與先前構成的光處理裝置相比,使主處理室2的處理空間A1內的臭氧濃度穩定在更低的濃度的驗證實驗,以下進行說明。
[Verification Experiment] Here, a verification experiment was conducted to confirm that the
(實施例)
實施例作為上述本實施形態的光處理裝置1。
(Example)
The example is the
(比較例1) 圖5A是從Y方向觀察比較例1的構成時的示意圖。如圖5A所示,比較例1除了不具備分隔構件(2p、3p、4p)以外,與實施例相同的構成。 (Comparative example 1) FIG. 5A is a schematic diagram of the structure of Comparative Example 1 viewed from the Y direction. As shown in FIG. 5A , Comparative Example 1 has the same structure as the Example except that it does not include the partition members (2p, 3p, 4p).
(比較例2)
圖5B是從Y方向觀察比較例2的構成時的示意圖。如圖5B所示,比較例2除了不具備搬入副處理室3、搬出副處理室4及分隔構件2p以外,與實施例相同的構成。
(Comparative example 2)
FIG. 5B is a schematic diagram of the structure of Comparative Example 2 when viewed from the Y direction. As shown in FIG. 5B , Comparative Example 2 has the same structure as the Example except that it does not include the
(條件)
臭氧濃度的測定藉由濃度計10a進行。又,不搬送工件W1,臭氧濃度的測定時間設為5分鐘。
(Conditions)
The ozone concentration is measured by the
(結果)
圖6是揭示濃度計10a所測定之臭氧濃度的時間變化的圖表。如圖6所示,可以確認比較例1的臭氧濃度相對於比較例2,變動被抑制,在更低的濃度下穩定。然後,可以確認實施例相對於比較例1,變動被進一步抑制,在更低的臭氧濃度下穩定。
(Results)
Figure 6 is a graph showing the time variation of the ozone concentration measured by the
依據以上內容,光處理裝置1與外部氣體直接流入主處理室2內之先前的構成相比,抑制了主處理室2內的臭氧濃度的變動,且在處理空間A1內生成的臭氧容易停留在工件W1周邊。所以,光處理裝置1相較於先前的光處理裝置,即使是較低的臭氧濃度,也能夠穩定且均質地處理工件整體。According to the above, the
再者,流入主處理室2內的氣體中,伴隨著工件W1的搬入從第一搬入口2a流入處理空間A1內的氣體的比例非常大。因此,根據主處理室2、第一搬入口2a及第一搬出口2b的尺寸,即使光處理裝置1不具備搬出副處理室4,也有可使主處理室2的處理空間A1內的臭氧濃度充分地穩定的狀況。Furthermore, of the gas flowing into the
又,在副處理室(3、4)內,氣氛氣體(G3、G4)的循環對主處理室2的處理空間A1內之臭氧濃度幾乎沒有影響。因此,對於副處理室(3、4),不設置分隔構件(3p、4p)亦可。Furthermore, the circulation of the atmosphere gas (G3, G4) in the auxiliary processing chambers (3, 4) has almost no effect on the ozone concentration in the processing space A1 of the
圖7A及圖7B是揭示搬送機構5及分隔構件2p之一構成例的示意圖。如圖7A所示,分隔構件2p作為不設置使搬送滾筒5a貫通的孔2pb而設置收容搬送滾筒5a的收容袋2pc的構成亦可,作為配置於搬送滾筒5a的-Z側之未設有孔2pb、收容袋2pc的板狀的構件亦可。又,在此對分隔構件2p的構成進行了說明,但設於各副處理室(3、4)的分隔構件(3p、4p)作為如上所述的構成亦可,進而,分隔構件(2p、3p、4p)的形狀各不相同亦可。Fig. 7A and Fig. 7B are schematic diagrams showing an example of the structure of the conveying
而且,如圖4A及圖4B所示,搬送滾筒5a在X方向及Y方向上排列,但配置位置可為任意,只要可沒有問題地搬送工件W1,採用不規則的配置亦可。然後,搬送滾筒5a單體的形狀可為任意,如圖7B所示,呈沿Y方向延伸的形狀亦可。4A and 4B, the conveying
在本實施形態中,具備從各排氣口(2c、3c1、3c2、4c1、4c2)排出各處理室(2、3、4)內之氣氛氣體(G2、G3、G4)的排氣控制機構,但光處理裝置1不具備排氣控制機構亦可。例如,藉由向處理空間A1內供給加工氣體G1,處理空間A1內的氣壓變高,在充分抑制氣氛氣體(G3、G4)的流入而使臭氧濃度穩定的情況下,不具備排氣控制機構亦可。又,氣氛氣體(G2、G3、G4)的排氣量的控制使用排氣用風扇(2f,3f,4f)以外的機構來進行亦可。例如,以可調整排出的氣氛氣體(G2、G3、G4)的量之方式,各排氣口(2c、3c1、3c2、4c1、4c2)經由風量調整用的風門、可變閥等,連通於設置在設施內的排氣用管道亦可。依據該構成,透過風量調整用的風門、可變閥等來調整引入排氣用管道之氣體的量,由此調整從各排氣口(2c、3c1、3c2、4c1、4c2)排出之氣氛氣體(G2、G3、G4)的量。再者,風量調整用的風門、可變閥的控制藉由排氣控制機構自動進行亦可,藉由人手動進行亦可。In this embodiment, an exhaust control mechanism is provided for exhausting the ambient gas (G2, G3, G4) in each processing chamber (2, 3, 4) from each exhaust port (2c, 3c1, 3c2, 4c1, 4c2). , but the
在本實施形態中,透過濃度計10a測定處理空間A1內之氣氛氣體G2的臭氧濃度,控制從氣體供給源11供給之加工氣體G1的流量,但作為不具備濃度計10a,而以一定的流量從氣體供給源11供給加工氣體G1的構成亦可。In this embodiment, the ozone concentration of the atmospheric gas G2 in the processing space A1 is measured by the
[其他實施形態] 以下,針對其他實施形態進行說明。 [Other embodiments] Next, other embodiments will be described.
<1>圖8是從Y方向觀察光處理裝置1的其他實施形態時的示意圖。如圖8所示,光處理裝置1亦可具備:具有濃度計10a,因應濃度計10a所測定之主處理室2內的氣氛氣體G2的臭氧濃度,控制向紫外光源20供給的電力的電力控制部80。<1> FIG. 8 is a schematic diagram of another embodiment of the
在前述構成的情況下,例如,使從氣體供給源11供給的加工氣體G1的量設為一定,藉由從紫外光源20出射之紫外光的強度,控制在處理空間A1內生成之臭氧的量。In the case of the above-mentioned structure, for example, the amount of the processing gas G1 supplied from the
從紫外光源20出射之紫外光的強度係例如透過驅動電壓、供給的電流的大小、在以交流供給的情況下可藉由頻率、工作比的調整等,與氣體的供給量的調整相比更細微地進行調整。The intensity of the ultraviolet light emitted from the
<2>圖9是從Y方向觀察光處理裝置1之與圖8不同的其他實施形態時的示意圖。如圖9所示,光處理裝置1具備用以監視處理空間A1的氣氛氣體G2之臭氧濃度的濃度計90a亦可,進而具備記錄濃度計90a所測定之氣氛氣體G2的臭氧濃度的資料的記錄部90b亦可。又,,光處理裝置1具備將該資料透過無線或有線發送到外部機器的發送部亦可。再者,記錄部90b例如是微電腦等所具備之記憶體、外部機器所具備之硬碟等、或記憶體裝置等單體的記錄媒體等。<2> FIG. 9 is a schematic diagram of another embodiment of the
透過作為前述構成,例如在處理完畢的工件W1中發生了不良的情況下,可確認處理空間A1內的臭氧濃度是否發生了異常、對不良原因進行分析。又,在以可始終監視處理空間A1內之臭氧濃度的方式構成的情況下,在工件W1的處理中,可偵測處理空間A1內之臭氧濃度的異常。With the above-mentioned configuration, for example, when a defect occurs in the processed workpiece W1, it can be confirmed whether the ozone concentration in the processing space A1 is abnormal and the cause of the defect can be analyzed. Furthermore, in the case where the ozone concentration in the processing space A1 is always monitored, an abnormality in the ozone concentration in the processing space A1 can be detected during processing of the workpiece W1.
<3>前述之光處理裝置1所具備的構成僅為一例,本發明並不限定於圖示的各構成。<3> The configuration of the
1:光處理裝置
2:主處理室
2a:第一搬入口
2b:第一搬出口
2c:主排氣口
2f:排氣用風扇
2p:分隔構件
2pa:主面
2pb:孔
2pc:收容袋
3:搬入副處理室
3a:第二搬入口
3b:第二搬出口
3c1:副排氣口
3c2:副排氣口
3f:排氣用風扇
3p:分隔構件
4:搬出副處理室
4a:第三搬入口
4b:第三搬出口
4c1:副排氣口
4c2:副排氣口
4f:排氣用風扇
4p:分隔構件
5:搬送機構
5a:搬送滾筒
10:加工氣體控制部
10a:濃度計
11:氣體供給源
12:排氣控制部
20:紫外光源
20a:光出射面
21:配管
21a:氣體導入口
22:抽氣管
22a:取入口
22b:排出口
22c:合流部
80:電力控制部
90a:濃度計
90b:記錄部
A1:處理空間
A2:滯留空間
B1:空間
B2:空間
C1:空間
C2:空間
d1:控制信號
G1:加工氣體
G2:氣氛氣體
G3:氣氛氣體
G4:氣氛氣體
W1:工件
1:Light processing device
2:
[圖1]從Y方向觀察光處理裝置的一實施方式時的示意圖。 [圖2]圖1的處理空間A1周邊的放大圖。 [圖3]從X方向觀察主處理室時的圖式。 [圖4A]示意揭示主處理室內之搬送機構的構成的立體圖。 [圖4B]從+Z側觀察圖4A的搬送機構時的圖式。 [圖4C]從Y方向觀察圖4A的搬送機構時的圖式。 [圖5A]從Y方向觀察比較例1的構成時的示意圖。 [圖5B]從Y方向觀察比較例2的構成時的示意圖。 [圖6]揭示濃度計所測定之臭氧濃度的時間變化的圖表。 [圖7A]揭示搬送機構及分隔構件之一構成例的示意圖。 [圖7B]揭示搬送機構及分隔構件之一構成例的示意圖。 [圖8]從Y方向觀察光處理裝置的其他實施形態時的示意圖。 [圖9]從Y方向觀察光處理裝置的其他實施形態時的示意圖。 [Fig. 1] A schematic diagram of an embodiment of a light processing device viewed from the Y direction. [Fig. 2] An enlarged view of the periphery of the processing space A1 in Fig. 1. [Fig. 3] A view of the main processing chamber when viewed from the X direction. [Fig. 4A] A perspective view schematically showing the structure of the transport mechanism in the main processing chamber. [Fig. 4B] A view of the transport mechanism of Fig. 4A when viewed from the +Z side. [Fig. 4C] A view of the conveying mechanism of Fig. 4A when viewed from the Y direction. [Fig. 5A] A schematic view of the structure of Comparative Example 1 when viewed from the Y direction. [Fig. 5B] A schematic view of the structure of Comparative Example 2 when viewed from the Y direction. [Fig. 6] A graph showing temporal changes in ozone concentration measured by a densitometer. [Fig. 7A] A schematic diagram showing a structural example of a conveying mechanism and a partition member. [Fig. 7B] A schematic diagram showing a structural example of a conveying mechanism and a partition member. [Fig. 8] A schematic view of another embodiment of the light processing apparatus when viewed from the Y direction. [Fig. 9] A schematic diagram of another embodiment of the light processing apparatus viewed from the Y direction.
1:光處理裝置 1:Light processing device
2:主處理室 2: Main processing room
2a:第一搬入口 2a: First entrance
2b:第一搬出口 2b: First exit
2c:主排氣口 2c: Main exhaust port
2f:排氣用風扇 2f: Exhaust fan
2p:分隔構件 2p: Separating components
3:搬入副處理室 3: Move into the deputy processing room
3a:第二搬入口 3a: Second entrance
3b:第二搬出口 3b: Second exit
3c1:副排氣口 3c1: Sub-exhaust port
3c2:副排氣口 3c2: Auxiliary exhaust port
3f:排氣用風扇 3f: Exhaust fan
3p:分隔構件 3p: Separate components
4:搬出副處理室 4: Move out of the deputy processing room
4a:第三搬入口 4a:The third entrance
4b:第三搬出口 4b: The third exit
4c1:副排氣口 4c1: Sub-exhaust port
4c2:副排氣口 4c2: Sub-exhaust port
4f:排氣用風扇 4f: Exhaust fan
4p:分隔構件 4p: Separating components
5:搬送機構 5:Transportation mechanism
5a:搬送滾筒 5a: Transport roller
10:加工氣體控制部 10: Processing gas control department
10a:濃度計 10a: Concentration meter
11:氣體供給源 11:Gas supply source
12:排氣控制部 12: Exhaust control unit
21a:氣體導入口 21a:Gas inlet
A1:處理空間 A1: Processing space
A2:滯留空間 A2: Stagnation space
B1:空間 B1: Space
B2:空間 B2: Space
C1:空間 C1: Space
C2:空間 C2: Space
d1:控制信號 d1: control signal
G1:加工氣體 G1: Processing gas
G2:氣氛氣體 G2: Atmosphere gas
G3:氣氛氣體 G3: Atmospheric gas
G4:氣氛氣體 G4: Atmospheric gas
W1:工件 W1: workpiece
Claims (8)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022129153A JP2024025847A (en) | 2022-08-15 | 2022-08-15 | light processing equipment |
| JP2022-129153 | 2022-08-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202409166A true TW202409166A (en) | 2024-03-01 |
Family
ID=89915533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112129809A TW202409166A (en) | 2022-08-15 | 2023-08-08 | Light processing device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2024025847A (en) |
| KR (1) | KR20240023485A (en) |
| CN (1) | CN117594478A (en) |
| TW (1) | TW202409166A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5083318B2 (en) | 2007-08-16 | 2012-11-28 | 旭硝子株式会社 | Substrate cleaning apparatus and substrate cleaning method |
| EP2650121A4 (en) | 2010-12-06 | 2014-05-07 | Konica Minolta Inc | Gas-barrier film, method for producing gas-barrier film, and electronic device |
-
2022
- 2022-08-15 JP JP2022129153A patent/JP2024025847A/en not_active Abandoned
-
2023
- 2023-07-27 CN CN202310928798.5A patent/CN117594478A/en active Pending
- 2023-08-08 TW TW112129809A patent/TW202409166A/en unknown
- 2023-08-14 KR KR1020230106044A patent/KR20240023485A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240023485A (en) | 2024-02-22 |
| CN117594478A (en) | 2024-02-23 |
| JP2024025847A (en) | 2024-02-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4473344B2 (en) | Plasma processing method and plasma processing apparatus | |
| CN101359590B (en) | Substrate processing device, substrate processing method, and storage medium | |
| KR100505061B1 (en) | Substrate transfer module | |
| KR100910602B1 (en) | Substrate treatment system and substrate treatment method | |
| TWI847230B (en) | Side storage pods, electronic device processing system, and methods for operating efems | |
| JPH07245332A (en) | SEMICONDUCTOR MANUFACTURING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE | |
| US9616469B2 (en) | Light projection device | |
| US11527404B2 (en) | Substrate processing apparatus and substrate processing method | |
| US20200147657A1 (en) | Light irradiation device | |
| TWI673765B (en) | Device front end module and method for introducing replacement gas to device front end module | |
| KR101558596B1 (en) | Reduced-pressure drying device and reduced-pressure drying method | |
| TWI681491B (en) | Substrate treating apparatus | |
| TW202409166A (en) | Light processing device | |
| JP2018133409A (en) | Substrate processing method | |
| KR20200102245A (en) | A vortex detection unit, a substrate processing apparatus including the same, and a vortex detection method | |
| JP7654812B2 (en) | LOAD LOCK CHAMBER AND SUBSTRATE PROCESSING APPARATUS | |
| JP6550964B2 (en) | Optical processing apparatus and manufacturing method thereof | |
| JP2004281832A (en) | Method of transporting semiconductor substrate in semiconductor manufacturing apparatus and semiconductor manufacturing apparatus | |
| JP2009194014A (en) | Process processing equipment | |
| JP4414869B2 (en) | Vacuum processing equipment | |
| JPH07335602A (en) | Method and device for surface treatment of substrate | |
| KR20230167732A (en) | Heat treatment apparatus, heat treatment method, and recording medium | |
| JP2008068155A (en) | Excimer light irradiation equipment | |
| US9362150B2 (en) | Substrate processing apparatus | |
| WO2022137725A1 (en) | Substrate treating device, substrate treating method, and ultraviolet ray irradiation unit |