TW201941285A - Substrate processing device and substrate processing method - Google Patents

Abstract

To provide a substrate processing device and a substrate processing method, capable of reducing an effect on subsequent processing and further preventing residue from scattering from a substrate and contaminating the surrounding environment, by certainly removing residue adhering to a substrate. A substrate processing device 1 includes: a light irradiation unit 2 which irradiates a laminate 50 with light to alter a reaction layer 20, the laminate including a support 10, a substrate 40, and the reaction layer 20 interposed between the support 10 and the substrate 40; a peeling unit 3 for peeling the substrate 40 from the support 10; a first cleaning unit 4 for cleaning, with a liquid, the substrate 40 peeled from the support 10; and a second cleaning unit 5 for processing, with plasm, the substrate 40 peeled from the support 10.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method.

In recent years, as an example of a method for manufacturing an electronic device, a technique called a fan-out PLP (Fan-out Panel Level Package) technology is known. In the fan-out type PLP technology, for example, a reaction layer that is deteriorated by absorption or heating of light is formed on a support such as a wafer or a glass plate, and a substrate having electronic components is laminated thereon to form a laminate. Thereafter, light or heat is applied to the reaction layer to separate the substrate from the support, and after the substrate is cleaned, the substrate is cut for each electronic component to obtain an electronic device (for example, refer to Patent Document 1).

[Prior technical literature]
[Patent Literature]

[Patent Document 1] Japanese Patent Application Publication No. 2010-3748

[Problems to be solved by the invention]

In the above-mentioned fan-out PLP technology, the substrate is peeled from the support by applying light or heat to the reaction layer of the laminate, but at this time, the residue of the reaction layer may adhere to the substrate. The residue is deteriorated by light or heat, and it may be difficult to remove the residue even after washing with a solvent. If the residue adheres in this way, the residue may affect its subsequent processing. In addition, if the substrate is transported to another place with the residue adhered, the residue will be scattered from the surface of the substrate, which may cause pollution to the surrounding environment.

An object of the present invention is to provide a substrate processing apparatus and a substrate processing method, which can reliably remove residues attached to a substrate, reduce the influence on subsequent processing, and prevent the residues from scattering from the substrate to pollute the surrounding environment.

[Technical means to solve the problem]

According to a first aspect of the present invention, there is provided a substrate processing apparatus including a light irradiation unit that irradiates light to a laminated body including a support, a substrate, and a reaction layer interposed between the support and the substrate, whereby Deteriorating the reaction layer; and a peeling unit that peels the substrate from the support; and a first cleaning unit that cleans the substrate that has been peeled from the support with a liquid; and a second cleaning unit, The substrate peeled from the support is treated with a plasma.

In a second aspect of the present invention, a substrate processing method is provided, including: a light irradiation process, irradiating light to a laminated body including a support, a substrate, and a reaction layer interposed between the support and the substrate, whereby Deteriorating the reaction layer; and a peeling process to peel the substrate from the support; and a liquid cleaning process to clean the substrate from which the support is peeled by liquid; and a plasma cleaning process to The substrate peeled from the support is treated with a plasma.

[Compared with the efficacy of the prior art]

According to the present invention, the liquid cleaning process performed by the first cleaning unit and the plasma cleaning process performed by the substrate of the second cleaning unit can reliably remove the residue attached to the substrate, thereby reducing the The influence on the subsequent processing can also prevent the residue from being scattered from the substrate to pollute the surrounding environment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in the drawing, in order to facilitate understanding of each structure, a part that emphasizes or simplifies a part may be different from the actual structure or shape and scale.

<Substrate processing equipment>
FIG. 1 is a functional block diagram showing an example of the substrate processing apparatus 1 according to the first embodiment. The substrate processing apparatus 1 shown in FIG. 1 performs various processes on the laminated body 50 to form a substrate 40. The laminated body 50 includes a support 10, a reaction layer 20, an adhesive layer 30, and a substrate 40. In addition, although not shown, the support body 10 separated from the laminate 50 may be appropriately taken out of the substrate processing apparatus 1, or may be stored in the substrate processing apparatus 1 for a predetermined number and processed uniformly from the substrate. The device 1 is taken out. As shown in FIG. 1, the substrate processing apparatus 1 includes a light irradiation unit 2, a peeling unit 3, a first cleaning unit 4, a second cleaning unit 5, a third cleaning unit 6, and a transfer unit 7.

The light irradiation unit 2 irradiates the laminated body 50 with light, thereby modifying the reaction layer 20. The light irradiation unit 2 includes, for example, a mounting table (not shown) on which the laminated body 50 is placed, and an irradiation device (not shown) that irradiates light of a wavelength that can modify the reaction layer 20. The light from this irradiation device may be irradiated from the support 10 side of the laminated body 50 or may be irradiated from the substrate 40 side of the laminated body 50. The details of the light source provided in the irradiation device and the light emitted from the light source will be described later. The light from the irradiation device may be irradiated from both the support body 10 side and the substrate 40 side of the laminated body 50. In addition, the irradiation of light from the irradiation device may be a method of scanning spot light, or a method of comprehensively irradiating light to the layered body 50, and a portion of the layered body 50 that irradiates light while irradiating the light Either step by step.

The light irradiation unit 2 is housed in the substrate processing apparatus 1, for example, in a chamber dedicated to the light irradiation unit 2. With this chamber, it is possible to prevent the light emitted from the irradiation device from leaking out of the chamber inside the substrate processing apparatus 1.

The peeling unit 3 peels the substrate 40 from the support 10. In the peeling unit 3, the laminated body 50 in a state where the reaction layer 20 is deteriorated by the light irradiation unit 2 described above is carried. The peeling unit 3 includes, for example, a fixing table (not shown) for fixing the laminate 50 and a suction device (not shown) for suctioning the support 10. In the peeling unit 3, the laminated body 50 is fixed to the fixing table with the supporting body 10 as an upper side, and the adsorption device is adsorbed on the supporting body 10 and pulled up or the fixing table is lowered in this state, thereby supporting the supporting body 10 It is peeled from the substrate 40.

The first cleaning unit 4 cleans the substrate 40 peeled from the support 10 with a liquid. The first washing unit 4 is a liquid washing device. The first cleaning unit 4 includes, for example, a mounting table (not shown) on which the substrate 40 is mounted, a liquid supply device (not shown) that supplies liquid to the substrate 40 mounted on the mounting table, and a cleaning substrate 40 that discharges the cleaning substrate 40. The discharge portion of the liquid is not shown. The first cleaning unit 4 removes the adhesive layer 30 attached to the substrate 40 peeled from the support 10 with a liquid.

The liquid used in the first washing unit 4 includes one or more selected from a hydrocarbon-based organic solvent, a nitrogen-containing organic solvent, an ether-based solvent, and an ester-based solvent. Examples of the hydrocarbon-based organic solvent include linear hydrocarbons such as hexane, heptane, octane, nonane, methyloctane, decane, undecane, dodecane, and tridecane; Bifurcated hydrocarbons having 4 to 15 carbons; cyclic hydrocarbons such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decalin, tetrahydronaphthalene, etc .; p-mentane, o- Mentane, m-menthane, biphenylmenthane, 1,4-terpene diol, 1,8-terpene diol, pinane, norbornane, pinane, arborane, pinane, longifolene, Geraniol, nerol, linalool, citral, citronellol, menthol, isomenthol, neomenthol, α-terpineol, β-terpineol, γ-terpineol, terpineol En-1-ol, terpinen-4-ol, terpineol dihydroacetate, 1,4- eucalyptol, 1,8- eucalyptol, acetol, parvanone, ionone, arborvitae Terpene-based solvents such as ketones, camphor, d-limonene, l-limonene, dipentene; anisole, ethyl benzyl ether, tolyl methyl ether, diphenyl ether, dibenzyl ether, ethyl Aromatic organic solvents such as phenyl ether and butyl phenyl ether. Examples of the nitrogen-containing organic solvent include solvents having a sulfonamide bond, such as N-methylpyrrolidone, NN-dimethylacetamide, and dimethylformamide. Examples of the ether-based solvent include polyvalent alcohols such as ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol; ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, Or dipropylene glycol monoacetate and other compounds having an ester bond; cyclic ethers such as dioxane; monomethyl ether, monoethyl ether, Polyvalent alcohol derivatives such as monopropyl ether and monobutyl ether, and compounds having ether bonding such as monoalkyl ether or monophenyl ether. Examples of the ester-based solvent include methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxybutyl acetic acid, methyl pyruvate, ethyl pyruvate, and methoxy Esters such as methyl propionate and ethyl ethoxypropionate.
As another solvent having a high easiness to start, TZNR (registered trademark) -HC thinner manufactured by Tokyo Yingka Kogyo Co., Ltd. can be used.

The first cleaning unit 4 is housed in the substrate processing apparatus 1, for example, in a chamber dedicated to the first cleaning unit 4. With this chamber, it is possible to prevent the liquid supplied from the liquid supply device from leaking out of the chamber inside the substrate processing apparatus 1.

The second cleaning unit 5 processes the substrate 40 peeled from the support 10 by a plasma treatment. The second cleaning unit 5 is a plasma cleaning device. The second cleaning unit 5 includes, for example, a mounting table (not shown) on which the substrate 40 is mounted, and a plasma generating device (not shown) that generates plasma. The substrate 40 placed on the mounting table is touched with a plasma generated by a plasma generating device, thereby removing the residue of the reaction layer 20 that has been deteriorated by the light irradiation unit 2 described above. The second cleaning unit 5 processes the substrate 40 by, for example, an oxygen plasma. In addition, the second washing unit 5 may be a plasma that uses a gas such as N ₂ , NH ₃ , CF ₄ instead of an oxygen plasma.

The second cleaning unit 5 is housed in the substrate processing apparatus 1, for example, and placed in a chamber dedicated to the second cleaning unit 5. With this chamber, it is possible to prevent the plasma generated in the plasma cleaning apparatus from leaking out of the chamber inside the substrate processing apparatus 1.

The third cleaning unit 6 cleans the substrate 40 peeled from the support 10 with a liquid. The third washing unit 6 is a liquid washing device. The third cleaning unit 6 includes, for example, a mounting table (not shown) on which the substrate 40 is mounted, a liquid supply device (not shown) that supplies liquid to the substrate 40 mounted on the mounting table, and a cleaning substrate 40 that discharges The discharge portion of the liquid is not shown. The third cleaning unit 6 rinses and removes the deteriorated portion (the deteriorated layer 20 a described later) of the reaction layer 20 attached to the substrate 40 peeled from the support 10 with a liquid. The liquid used in the third washing unit 6 includes one or more selected from a hydrocarbon-based organic solvent, a nitrogen-containing organic solvent, an ether-based solvent, and an ester-based solvent. The hydrocarbon-based organic solvent, the nitrogen-containing organic solvent, the ether-based solvent, or the ester-based solvent are the same as those used in the first cleaning unit 4. The liquid used in the third washing unit 6 may be water.

The third cleaning unit 6 is housed in the substrate processing apparatus 1, for example, in a chamber dedicated to the third cleaning unit 6. With this chamber, it is possible to prevent the liquid supplied from the liquid supply device from leaking out of the chamber inside the substrate processing apparatus 1.

The peeling unit 3, the first washing unit 4, the second washing unit 5, and the third washing unit 6 are arranged in the same space formed by a plurality of wall panels. In this space, a transfer unit 7 that transfers the substrate 40 peeled from the support 10 or the support 10 is arranged. The transfer unit 7 includes a transfer device 7a. The transfer device 7 a includes, for example, a holding portion (not shown) that holds the laminated body 50 or the substrate 40, and a running portion that runs along a guide or the like laid in the substrate processing device 1. The holding portions and the running portions are driven by a driving device (not shown). The transfer device 7 a transfers the layered body 50 that has been transferred to the substrate processing device 1 to the light irradiation unit 2. In addition, the transfer device 7 a transfers the layered body 50 that has been irradiated with light by the light irradiation unit 2 to the peeling unit 3. In addition, the transfer device 7 a transfers the substrate 40 separated from the support 10 by the peeling unit 3 between the first cleaning unit 4, the second cleaning unit 5, and the third cleaning unit 6. In addition, the conveyance device 7a may convey the support body 10 separated by the peeling unit 3.

The operations of the above units will be described in a substrate processing method described later.

<Laminated body>
The laminated body 50 processed by the substrate processing apparatus 1 is demonstrated. FIG. 2 shows an example of the laminated body to be processed in the substrate processing apparatus 1. FIG. 2 (A) is a diagram of a laminated body 50 including an adhesive layer 3, and FIG. 2 (B) is an laminated body without an adhesive layer 30 Figure of 50A. That is, the laminated body 50 shown in FIG. 2 (A) includes a support 10, a reaction layer 20, an adhesive layer 30, and a substrate 40. The laminate 50A shown in FIG. 2 (B) includes a support 10, a reaction layer 20, and a substrate 40.

The substrate processing apparatus 1 may include, for example, a layered body forming unit for forming the layered bodies 50 and 50A, or may be connected and disposed in this layered body forming unit. The laminated body forming unit includes, for example, a reaction layer forming device for forming the reaction layer 20 on the support 10, and a bonding layer forming device for forming the adhesion layer 30 on the reaction layer 20, and on the adhesion layer 30 or on the reaction layer 20 A substrate forming apparatus in which electronic components 41 are arranged to form a mold 42. The elements used in each part of the above-mentioned laminated body forming unit will be described below.

(Support)
The support 10 is, for example, a semiconductor wafer having a circular shape or a nearly circular shape having a thickness of 50 to 500 μm. The thickness of the semiconductor wafer is arbitrary. In addition, instead of the semiconductor wafer, the support 10 may use, for example, a glass plate having a thickness of 500 to 1500 μm. The support body 10 is not limited to a circular shape or a nearly circular shape, and may be other shapes such as a rectangular shape, an elliptical shape, and a polygonal shape.

(Reaction layer)
The reaction layer 20 is formed of a material that is deteriorated by absorbing light, for example. In this embodiment, the deterioration of the reaction layer 20 refers to a state in which the reaction layer 20 is destroyed by a slight external force, or a state in which the adhesion force of the layer in contact with the reaction layer 20 is reduced. The reaction layer 20 absorbs light and deteriorates, so that the strength or adhesion to the support 10 is reduced compared to before the deterioration. Therefore, the deteriorated reaction layer 20 may be broken or peeled from the support body 10 by applying a slight external force (for example, lifting the support body 10 or the like).

The deterioration of the reaction layer 20 may be caused by the absorbed light energy (exothermic or non-exothermic) decomposition, cross-linking, change in the three-dimensional configuration, or dissociation of the functional groups (and the hardening of the reaction layer 20 accompanying them, Degassing, shrinking or expanding). The deterioration of the reaction layer 20 occurs as a result of light absorption by the material constituting the reaction layer 20. Therefore, the type of deterioration of the reaction layer 20 may vary depending on the type of the material constituting the reaction layer 20. The reaction layer 20 is not limited to a material that is deteriorated by absorbing light. For example, it may be a material that does not depend on light but is deteriorated by absorbing heat given thereto, or a material that is deteriorated by other solvents or the like.

The thickness of the reaction layer 20 is, for example, more preferably from 0.05 to 50 μm, and even more preferably from 0.3 to 1 μm. If the thickness of the reaction layer 20 converges in the range of 0.05 to 50 μm, the reaction can be performed by short-time light irradiation and low-energy light irradiation, or short-time heating, short-time immersion in a solvent, and the like. The layer 20 undergoes desired deterioration. The thickness of the reaction layer 20 is particularly preferably within a range of 1 μm or less from the viewpoint of productivity.

Hereinafter, the reaction layer 20 that is deteriorated by the energy of the absorbed light will be described. The reaction layer 20 is preferably formed of only a material having a structure that absorbs light, but within a range that does not impair essential characteristics, a material having no structure that absorbs light may be added to form the reaction layer 20. In addition, the side of the reaction layer 20 facing the adhesion layer 30 is preferably flat (no unevenness is formed), so that the formation of the adhesion layer 30 can be easily performed, and it can be uniformly adhered at the time of attachment. Attached.

The reaction layer 20 may be one that is deteriorated by absorbing light irradiated from the laser. That is, the light irradiated to the reaction layer 20 in order to modify the reaction layer 20 (light emitted from the irradiation device of the light irradiation unit 2 described above) may be a laser irradiator. Examples of lasers that emit light irradiating the reaction layer 20 include solid lasers such as YAG lasers, ruby lasers, glass lasers, YVO ₄ lasers, LD lasers, and fiber lasers, and pigment lasers. Liquid lasers such as lasers, CO ₂ lasers, excimer lasers, Ar lasers, He-Ne lasers, gas lasers, semiconductor lasers, free electron lasers, or non-laser lasers, etc. . The laser that emits the light irradiated to the reaction layer 20 may be appropriately selected according to the material constituting the reaction layer 20, as long as the laser is irradiated with light of a wavelength that can deteriorate the material constituting the reaction layer 20.

(Carbon fluoride)
The reaction layer 20 may be composed of a fluorocarbon. The reaction layer 20 is made of a fluorocarbon and deteriorates by absorbing light. As a result, the strength or adhesiveness before receiving light irradiation is lost. Therefore, by applying a slight external force (for example, lifting the support 10), the reaction layer 20 is destroyed, and the support 10 and the substrate 40 can be easily separated. The fluorocarbon constituting the reaction layer 20 can be appropriately formed by a plasma CVD (chemical vapor deposition) method.

Fluorocarbons, depending on their type, absorb light with an inherent range of wavelengths. In the light irradiation unit 2, the reaction layer 20 is irradiated with light having a wavelength in a range that the fluorocarbon used in the reaction layer 20 absorbs, whereby the fluorocarbon can be appropriately modified. The light absorption rate in the reaction layer 20 is preferably 80% or more.

As the light irradiated to the reaction layer 20, a solid laser such as a YAG laser, a ruby laser, a glass laser, a YVO ₄ laser, an LD laser, or an optical fiber laser can be appropriately used in accordance with the wavelength that the fluorocarbon can absorb. Liquid laser such as laser, pigment laser, CO ₂ laser, excimer laser, Ar laser, He-Ne laser, gas laser, semiconductor laser, free electron laser, etc., or Non-laser light. The wavelength at which the fluorocarbon can be modified is not limited to this, but, for example, a wavelength in a range of 600 nm or less can be used.

(Polymer having a light absorbing structure in its repeating unit)
The reaction layer 20 may contain a polymer having a structure having light absorption in its repeating unit. This polymer is deteriorated by light irradiation in the light irradiation unit 2. The deterioration of the polymer occurs because the structure absorbs the irradiated light. As a result of the deterioration of the polymer, the reaction layer 20 loses its strength or adhesiveness before receiving light irradiation. Therefore, by applying a slight external force (for example, lifting the support 10), the reaction layer 20 is destroyed, and the support 10 and the substrate 40 can be easily separated.

The above structure having light absorption is a chemical structure that absorbs light and deteriorates a polymer including the structure as a repeating unit. This structure is, for example, an atomic group including a conjugated π-electron system composed of a substituted or non-substituted benzene ring, a condensed ring, or a complex element ring. In more detail, the structure may be a CARDO structure, a benzophenone structure, a diphenylfluorene structure, a diphenylfluorene structure (bisphenylfluorene structure), Phenyl structure or diphenylamine structure.

When the above structure is present in the side chain of the polymer, the structure can be expressed by the following formula.

(Wherein, R is independently, alkyl, aryl, halogen, hydroxyl, keto, sulfoxide group, sulfone group or ^{N (R 1) (R 2} ) group (where, ^{R. 1} and R ² are each independently , Is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms), Z is absent, or -CO-, -SO _2- , -SO-, or -NH-, and n is an integer of 0 or 1 to 5).
In addition, the polymer includes, for example, a repeating unit expressed by any one of (a) to (d) in the following formula, or expressed by (e), or a structure including (f) in its main chain. .

(In the formula, l is an integer of 1 or more, m is an integer of 0 or 1 to 2, and X in (a) to (e) is any one of the above-mentioned chemical formula [Chemical Formula 1]. f) is any one of the formulas shown in [Chemical Formula 1] above or is absent, and Y ₁ and Y ₂ are each independently -CO- or -SO _2-. l is preferably an integer of 10 or less).

Examples of the benzene ring, condensed ring, and compound ring shown by the above-mentioned chemical formula [Chem. 1] include phenyl, substituted phenyl, benzyl, substituted benzyl, naphthalene, substituted naphthalene, anthracene, substituted anthracene, and anthracene Quinone, substituted anthraquinone, acridine, substituted acridine, azobenzene, substituted azobenzene, fluorene; fluorene, substituted fluorene; fluorene, fluorenone, substituted fluorenone, carbazole, substituted carbazole, N-alkylcarbine Azole, dibenzofuran, substituted dibenzofuran, phenanthrene, substituted phenanthrene, pyrene, and substituted fluorene. In the case where the exemplified substituent has a substituent, the substituent is, for example, from an alkyl group, an aryl group, a halogen atom, an alkoxy group, a nitro group, a fluorene, a nitrile, a fluorene, a dialkylamine, or a fluorene. , Hydrazone, carboxylic acid, carboxylic acid ester, sulfonic acid, sulfonic acid ester, alkylamine and arylamine.

Among the substituents represented by the above-mentioned chemical formula [Chemical Formula 1], as an example of the case where the fifth substituent having two phenyl groups and Z is -SO ₂ -are bis (2,4- Dihydroxyphenyl) fluorene, bis (3,4-dihydroxyphenyl) fluorene, bis (3,5-dihydroxyphenyl) fluorene, bis (3,6-dihydroxyphenyl) fluorene, bis (4‐ Hydroxyphenyl) fluorene, bis (3-hydroxyphenyl) fluorene, bis (2-hydroxyphenyl) fluorene, and bis (3,5-dimethyl-4-hydroxyphenyl) fluorene.

Among the substituents represented by the above-mentioned chemical formula [Chemical Formula 1], examples of the case where the fifth substituent having two phenyl groups and Z is -SO- include bis (2,3-2 Hydroxyphenyl) fluorene, bis (5-chloro-2,3-dihydroxyphenyl) fluorene, bis (2,4-dihydroxyphenyl) fluorene, bis (2,4-dihydroxy-6) -Methylphenyl) fluorene, bis (5-chloro-2,4-dihydroxyphenyl) fluorene, bis (2,5-dihydroxyphenyl) fluorene, bis (3,4-dihydroxy Phenyl) fluorene, bis (3,5-dihydroxyphenyl) fluorene, bis (2,3,4-trihydroxyphenyl) fluorene, bis (2,3,4-trihydroxy-6-formaldehyde) Phenyl) -fluorene, bis (5-chloro-2,3,4-trihydroxyphenyl) fluorene, bis (2,4,6-trihydroxyphenyl) fluorene, bis (5-chloro -2,4,6-trihydroxyphenyl) fluorene and the like.

Among the substituents represented by the above-mentioned chemical formula [Chemical Formula 1], as a fifth substituent having two phenyl groups, and Z is -C (= O)-, an example is 2,4. -Dihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,2 ', 4,4'-tetrahydroxybenzophenone, 2,2', 5,6'-tetrahydroxy Benzophenone, 2‐hydroxy‐4‐methoxybenzophenone, 2‐hydroxy‐4‐octyloxybenzophenone, 2‐hydroxy‐4‐dodecyloxybenzophenone, 2 , 2'‐dihydroxy‐4‐methoxybenzophenone, 2,6‐dihydroxy‐4‐methoxybenzophenone, 2,2'‐dihydroxy‐4,4'‐dimethoxy Benzophenone, 4-amine-2'-hydroxybenzophenone, 4-dimethylamine-2'-hydroxybenzophenone, 4-diethylamine-2'-hydroxybenzophenone , 4-dimethylamine-4'-methoxy-2'-hydroxybenzophenone, 4-dimethylamine-2 ', 4'-dihydroxybenzophenone, and 4-dimethyl Amine-3 ', 4'-dihydroxybenzophenone, etc.

When the above structure exists in the side chain of the polymer, the proportion of the repeating unit including the above structure in the polymer, the light transmittance falling on the reaction layer 20 will be 0.001% or more and 10% or less. In the range. When the polymer is adjusted so that the ratio converges in such a range, the reaction layer 20 sufficiently absorbs light, and it can surely and rapidly deteriorate. That is, the support body 10 can be easily removed (or separated, or peeled off) from the laminated body 50, and the irradiation time of light necessary for the removal can be shortened.

The structure described above can absorb light having a wavelength in a desired range depending on the type of the structure. For example, the wavelength of light that can be absorbed by the above structure is more preferably in a range of 100 nm or more and 2,000 nm or less. Within this range, the wavelength of light that can be absorbed by the above structure is on the shorter wavelength side, for example, in the range of 100 nm or more and 500 nm or less. For example, the above structure preferably absorbs ultraviolet light having a wavelength in a range of approximately 300 nm to 370 nm, thereby deteriorating a polymer including the structure.

The light that can be absorbed by the above structure is, for example, from a high-pressure mercury lamp (wavelength: 254nm or more, 436nm or less), KrF excimer laser (wavelength: 248nm), ArF excimer laser (wavelength: 193nm), F ₂ excimer laser (Wavelength: 157nm), XeCl laser (wavelength: 308nm), XeF laser (wavelength: 351nm) or solid UV laser (wavelength: 355nm), or g-ray (wavelength: 436nm), h-ray (wavelength : 405 nm) or i-ray (wavelength: 365 nm) and the like.

The reaction layer 20 includes a polymer including the above-mentioned structure as a repeating unit, but the reaction layer 20 may further include components other than the above-mentioned polymer. As this component, a filler, a plasticizer, and the component which can improve the peelability of the support body 10 etc. are mentioned. These components are appropriately selected from known substances or materials that do not hinder or promote light absorption by the above-mentioned structure and deterioration of polymers.

(Inorganic)
The reaction layer 20 may be composed of an inorganic substance. The reaction layer 20 is made of an inorganic substance and deteriorates by absorbing light. As a result, the reaction layer 20 loses its strength or adhesiveness before receiving light irradiation. Therefore, by applying a slight external force (for example, lifting the support 10), the reaction layer 20 is destroyed, and the support 10 and the substrate 40 can be easily separated.

The inorganic substance may have a structure that is deteriorated by absorbing light. For example, one or more types of inorganic substances selected from the group consisting of a metal, a metal compound, and carbon can be suitably used. The metal compound refers to a compound containing a metal atom, and may be, for example, a metal oxide or a metal nitride. Examples of such an inorganic substance are not limited thereto, but may be composed of gold, silver, copper, iron, nickel, aluminum, titanium, chromium, SiO ₂ , SiN, Si ₃ N ₄ , TiN, and carbon. In the group, one or more kinds of inorganic substances are selected. In addition, the so-called carbon is a concept of an allotrope that can also contain carbon, and examples thereof include diamond, fullerene, diamond-like carbon, and nano carbon tubes.

The inorganic substance absorbs light having a wavelength in an inherent range depending on the type. By irradiating the separation layer with light having a wavelength in a range that the inorganic substance used in the reaction layer 20 absorbs, the inorganic substance can be appropriately modified.

In the light irradiation unit 2, as the light irradiated to the reaction layer 20 composed of an inorganic substance, according to the wavelength that the inorganic substance can absorb, for example, a YAG laser, a ruby laser, a glass laser, a YVO ₄ laser, Solid lasers such as LD lasers, fiber lasers, liquid lasers such as pigment lasers, gas lasers such as CO ₂ lasers, excimer lasers, Ar lasers, He-Ne lasers, and semiconductor lasers , Free electron laser, etc., or non-laser light.

The reaction layer 20 composed of an inorganic substance can be formed on the support 10 by a known technique such as sputtering, chemical vapor deposition (CVD), plating, plasma CVD, and spin coating. The thickness of the reaction layer 20 composed of an inorganic substance is not particularly limited as long as it is a film thickness that can sufficiently absorb the light used, for example, it is more preferably set to a film thickness in a range of 0.05 μm or more and 10 μm or less. In addition, an adhesive may be applied to both sides or one side of an inorganic film (for example, a metal film) composed of an inorganic substance constituting the reaction layer 20 in advance, and may be attached to the support 10 and the substrate 40.

In addition, when a metal film is used as the reaction layer 20, depending on conditions such as the film quality of the reaction layer 20, the type of laser light source, laser output, and the like, it may cause laser reflection or charge the film. Therefore, it is preferable to provide the anti-reflection film or the anti-charge film on one of the upper and lower sides of the reaction layer 20, and to take these countermeasures.

(Compound with infrared absorbing structure)
The reaction layer 20 may be formed of a compound having an infrared-absorbing structure. This compound deteriorates by absorbing infrared rays. As a result of the deterioration of the compound, the reaction layer 20 loses its strength or adhesiveness before receiving infrared radiation. Therefore, by applying a slight external force (for example, lifting the support body, etc.), the reaction layer 20 is destroyed, and the support body 10 and the substrate 40 can be easily separated.

As a structure having an infrared-absorptive structure, or a compound containing a structure having an infrared-absorptive property, for example, an alkane, an olefin (vinyl, trans, cis, vinylidene, three-substitution, four-substitution, conjugate, or ene , Cyclic), alkynes (one displacement, two displacement), monocyclic aromatics (benzene, one displacement, two displacement, three displacement), alcohols and phenols (free OH, intramolecular hydrogen bonding, intermolecular hydrogen Bonding, saturated second order, saturated third order, unsaturated second order, unsaturated third order), acetal, ketal, aliphatic ether, aromatic ether, vinyl ether, ethylene oxide ether, Peroxide ether, ketone, dialkylcarbonyl, aromatic carbonyl, enol of 1,3-diketone, o-hydroxyaryl ketone, dialkylfluorene, aromatic fluorene, carboxylic acid (dimer, carboxylic acid Acid anion), formate, acetate, conjugated ester, non-conjugated ester, aromatic ester, lactone (β-, γ-, δ-), aliphatic acid chloride, aromatic acid chloride, acid anhydride (Conjugated, non-conjugated, cyclic, non-cyclic), first-order amine, second-order amine, lactam, first-order amine (aliphatic, aromatic), second-order (Aliphatic, aromatic), tertiary amine (aliphatic, aromatic), primary amine salt, secondary amine salt, tertiary amine salt, ammonium ion, aliphatic nitrile, aromatic nitrile, carbonization Diimine, aliphatic isonitrile, aromatic isonitrile, isocyanate, thiocyanate, aliphatic isothiocyanate, aromatic isothiocyanate, aliphatic nitrate, aromatic nitrate, nitroamine , Nitrosamines, nitrates, nitrites, nitroso bonds (aliphatic, aromatic, monomers, dimers), thiols, thiophenols, thiophenols, and other sulfur compounds, thiocarbonyl groups , Thallium, thallium, thionium chloride, first-order amidine, second-order amidine, sulfate, carbon-halogen bond, Si-A ¹ bond (A ¹ is H, C, O, or halogen ), PA ² bonding (A ² is H, C or O), or Ti-O bonding.

Examples of the structure including the carbon-halogen bond include -CH ₂ Cl, -CH ₂ Br, -CH ₂ I, -CF _2- , -CF ₃ , -CH = CF ₂ ,
-CF = CF ₂ , fluorinated aryl, and chlorinated aryl.

Examples of the structure including the Si-A ¹ bond include SiH, SiH ₂ , SiH ₃ , Si-CH ₃ , Si-CH _2- , Si-C ₆ H ₅ , SiO-aliphatic, and Si-OCH ₃ , Si-OCH ₂ CH ₃ , Si-OC ₆ H ₅ , Si-O-Si, Si-OH, SiF, SiF ₂ , and SiF ₃ . As the structure including the Si-A ¹ bond, it is particularly preferable to form a siloxane skeleton and a silsesquioxane skeleton.

Examples of the structure including the PA ² bond include PH, PH ₂ , P-CH ₃ , P-CH _2- , PC ₆ H ₅ , A ³ ₃ -PO (A ³ is aliphatic or aromatic), (A ⁴ O) ₃ -PO (A ⁴ is alkyl), P-OCH ₃ , P-OCH ₂ CH ₃ ,
P-OC ₆ H ₅ , POP, P-OH, and O = P-OH.

The structure described above can absorb infrared rays having a wavelength in a desired range depending on the type of the structure. Specifically, the wavelength of infrared rays that can be absorbed by the above structure is, for example, in a range of 1 μm or more and 20 μm or less, and can more appropriately absorb 2 μm or more and 15 μm or less. When the structure is a Si—O bond, a Si—C bond, or a Ti—O bond, the structure may be in a range of 9 μm or more and 11 μm or less. In addition, the wavelength of infrared rays that each structure can absorb can be easily understood by those skilled in the art. For example, as the absorption bands in each structure, you can refer to the non-patent literature: SILVERSTEIN, BASSLER, MORRILL, "A Spectral Identification Method for Organic Compounds (Fifth Edition)-Combination of MS, IR, NMR, and UV"-1992 (Published annually) on pages 146 to 151.

As the compound having an infrared-absorptive structure used in the formation of the reaction layer 20, as long as it is a compound having such a structure, it can be dissolved in a solvent for coating, and can be cured to form a solid layer. limited. However, in order to effectively deteriorate the compounds in the reaction layer 20 and facilitate the separation of the support 10 from the substrate 40, it is preferable that the infrared rays in the reaction layer 20 have a large absorption, that is, the light irradiation unit 2 pairs When the reaction layer 20 is irradiated with infrared rays, the infrared transmittance is low. Specifically, it is preferable that the infrared transmittance of the reaction layer 20 is lower than 90%, and more preferably that the infrared transmittance is lower than 80%.

To give an example, as a compound having a siloxane skeleton, for example, a polymer that is a repeating unit represented by the following chemical formula [Chemical Formula 3] and a polymer that is a repeating unit represented by the following Chemical Formula [Chemical Formula 4], that is, a resin, can be used, Alternatively, the polymer represented by the chemical formula [Chemical Formula 4] and the polymer derived from the acrylic polymer compound is the resin.

(In the aforementioned chemical formula [Chemical Formula 4], R ³ is hydrogen, an alkyl group having 10 or less carbon atoms, or an alkoxy group having 10 or less carbon atoms).
Among them, as the compound having a siloxane skeleton, t-butyl polymer, which is a polymer represented by the above-mentioned chemical unit [Chemical Formula 3] and a unit represented by the following chemical formula [Chemical Formula 5], is more preferred. Styrene (TBST) -dimethylsilane polymer, TBST is more preferably 1: 1 including the repeating unit represented by the above chemical formula [Chemical Formula 3] and the repeating unit represented by the following chemical formula [Chemical Formula 5] -Dimethicone polymer.

In addition, as the compound having a silsesquioxane skeleton, for example, a polymer that is a polymer represented by the following chemical formula [Chemical Formula 6] and a polymer represented by the following chemical unit [Chemical Formula 7], that is, a resin, can be used.

(In the above Chemical Formula [Chemical Formula 6], R ⁴ is hydrogen or an alkyl group having 1 or more and 10 carbon atoms, and in the above Chemical Formula [Chemical Formula 7], R ⁵ is an alkyl group having 1 or more and 10 carbon atoms, or Phenyl).
As a compound having a silsesquioxane skeleton, in addition to, Japanese Patent Application Laid-Open No. 2007-258663 (published on October 4, 2007) and Japanese Patent Application Laid-Open No. 2010-120901 (2010 Published on March 3), Japanese Patent Laid-Open Publication No. 2009-263316 (published on November 12, 2009) and Japanese Patent Laid-Open Publication No. 2009-263596 (published on November 12, 2009) Resin.

Among them, as the compound having a silsesquioxane skeleton, a polymer represented by a repeating unit represented by the following chemical formula [Chem. 8] and a polymer represented by a repeating unit represented by the following chemical formula [Chem. 9] are more preferable, A polymer including a repeating unit represented by the following chemical formula [Chemical formula 8] and a repeating unit represented by the following chemical formula [Chemical formula 9] at 7: 3.

As a polymer having a silsesquioxane skeleton, it may have a random structure, a ladder structure, and a cage structure, but any structure is acceptable.

Examples of the compound containing a Ti—O bond include (i) tetra-i-propoxy titanium, tetra-n-butoxy titanium, tetra (2-ethylhexyloxy) titanium, and Titanium alkoxides such as titanium-i-propoxyoctanediol; (ii) di-i-propoxy · bis (acetamidineacetone) titanium, and propanedioxytitanium bis (ethylacetoacetate) And other adduct titanium; (iii) iC ₃ H ₇ O-[-Ti (OiC ₃ H ₇ ) ₂ -O-] _n -iC ₃ H ₇ and nC ₄ H ₉ O-[-Ti (OnC ₄ H ₉ ) ₂ -O-] _n -nC ₄ H ₉ and other titanium polymers; (iv) tri-n-butoxytitanium monostearic acid, titanium stearic acid, di-i-propoxytitanium di Isostearic acid and (2-n-butoxycarbonylbenzyloxy) tributoxy titanium and other fluorinated titanium; (v) di-n-butoxy, bis (triethanolamine) ) Water-soluble titanium compounds such as titanium.

Among them, as the compound containing a Ti-O bond, di-n-butoxyfluorene bis (triethanolamined) titanium is preferred.
(Ti (OC ₄ H ₉ ) ₂ [OC ₂ H ₄ N (C ₂ H ₄ OH) ₂ ] ₂ ).

The above-mentioned reaction layer 20 contains a compound having an infrared-absorbing structure, but the reaction layer 20 may further include components other than the above-mentioned compounds. As this component, a filler, a plasticizer, and the component which can improve the peelability of the support body 10 etc. are mentioned. These components are appropriately selected from well-known substances or materials that do not hinder or promote infrared absorption by the above-mentioned structure and deterioration of compounds.

(Infrared absorbing substance)
The reaction layer 20 may contain an infrared absorbing substance. The reaction layer 20 is constituted by containing an infrared absorbing substance, and deteriorates due to absorption of light. As a result, the strength or adhesiveness before receiving light irradiation is lost. Therefore, by applying a slight external force (for example, lifting the support 10), the reaction layer 20 is destroyed, and the support 10 and the substrate 40 can be easily separated.

The infrared absorbing substance may have a structure that is deteriorated by absorbing infrared rays, and for example, carbon black, iron particles, or aluminum particles can be suitably used. An infrared absorbing substance absorbs light having an inherent range of wavelengths depending on its type. In the light irradiation unit 2, the reaction layer 20 is irradiated with light having a wavelength in a range that the infrared absorbing substance used in the reaction layer 20 absorbs, whereby the infrared absorbing substance can be appropriately modified.

The reaction layer 20 is formed by disposing a liquid body containing the above-mentioned materials on one surface (reaction layer formation surface) 110 of the support 10. For example, the support body 10 is placed on a platform such as a coating device, and the liquid nozzle is discharged from the slot nozzle to the reaction layer forming surface 110 while the slit nozzle for discharging the liquid body is moved relative to the support body 10. . Thereby, the reaction layer 20 is formed on the entire surface of the reaction layer formation surface 110 of the support 10. The method for applying the reaction layer 20 is not limited to the slit nozzle method described above, and may be performed by, for example, a spin coating method, a dipping method, a roll knife method, a doctor blade method, a spray method, or the like. .

(Adjacent layer)
The resin contained in the adhesive layer 30 is not limited as long as it has adhesiveness, and examples thereof include hydrocarbon resins, acrylic-styrene resins, maleimide resins, elastomer resins, or the like. Combined and so on.

The glass transition temperature (Tg) of the adhesive varies depending on the type or molecular weight of the resin, and the formulation of the plasticizer to the adhesive. The type or molecular weight of the resin contained in the adhesive can be appropriately selected according to the type of the substrate and the support, but the Tg of the resin used in the adhesive is preferably -60 ° C or higher and 200 ° C or lower, more preferably Preferably
Above -25 ° C and below 150 ° C. The Tg of the resin used in the adhesive is in the range of -60 ° C or higher and 200 ° C or lower. This does not require excessive energy for cooling, and the adhesive force of the adhesive layer 30 can be appropriately reduced. In addition, the Tg of the adhesive layer 30 can be adjusted by appropriately blending a plasticizer, a resin having a low polymerization degree, and the like. The glass transition temperature (Tg) can be measured using, for example, a known differential scanning calorimeter (DSC).

(Hydrocarbon resin)
A hydrocarbon resin has a hydrocarbon skeleton and is a resin composed by polymerizing a monomer composition. Examples of the hydrocarbon resin include a cycloolefin-based polymer (hereinafter referred to as "resin (A)") and at least one resin selected from the group consisting of a terpene resin, a rosin-based resin, and a petroleum resin ( Hereinafter, it is also referred to as "resin (B)"), but is not limited thereto.

The resin (A) may be a resin composed by polymerizing a monomer component containing a cycloolefin-based monomer. Specific examples include ring-opening (co) polymers containing monomer components containing cycloolefin-based monomers, and resins obtained by additionally (co) polymerizing monomer components containing cycloolefin-based monomers.

Examples of the cycloolefin-based monomer included in the monomer component constituting the resin (A) include bicyclics such as norbornene and norbornadiene, dicyclopentadiene, and dihydroxypentadiene. Tricyclics, tetracyclics such as tetracyclododecene, pentacyclics such as cyclopentadiene trimers, heptacyclics such as tetracyclopentadiene, or the alkyl groups of these polycyclics (a Group, ethyl, propyl, butyl, etc.) substitution, olefin (vinyl, etc.) substitution, alkylene (ethylene, etc.) substitution, aryl (phenyl, tolyl, naphthyl, etc.) substitution体 等。 Body and so on. Among them, norbornene, tetracyclododecene, or a norbornene-based monomer selected from the group consisting of these alkyl substituents is particularly preferred.

The monomer component constituting the resin (A) may contain other monomers which can be copolymerized with the above-mentioned cycloolefin-based monomer, and for example, an olefin monomer is preferably contained. Examples of the olefin monomer include ethylene, propylene, 1-butene, isobutylene, 1-hexene, and α-olefin. The olefin monomer may be linear or branched.

In addition, as a monomer component constituting the resin (A), a cycloolefin monomer is contained, and it is preferable from the viewpoint of high heat resistance (low thermal decomposition, thermal weight reduction). The proportion of the cyclic olefin monomer with respect to the entire monomer component constituting the resin (A) is preferably 5 mol% or more, more preferably 10 mol% or more, and even more preferably 20 mol% or more. Moreover, although the ratio of the cyclic olefin monomer with respect to the whole monomer component which comprises a resin (A) is not specifically limited, From a viewpoint of solubility and stability with time in solution, it is preferable that it is 80 Mo. Ear% or less, more preferably 70 mole% or less.

The monomer component constituting the resin (A) may contain a linear or branched olefin monomer. The ratio of the olefin monomer to the entire monomer components constituting the resin (A) is preferably from 10 to 90 mol%, more preferably from 20 to 85 mol% from the viewpoint of solubility and flexibility. , And even better is 30 to 80 mole%.

The resin (A) is, for example, a resin having no polar group, such as a resin obtained by polymerizing a monomer component composed of a cycloolefin-based monomer and an olefin monomer, and is suitable for suppressing generation of a gas at a high temperature. Better.

There are no particular restrictions on the polymerization method, polymerization conditions, and the like when polymerizing the monomer components, and they can be appropriately set in accordance with a conventional method.

As a commercially available product that can be used as the resin (A), for example, "TOPAS" manufactured by Polyplastics, "APEL" manufactured by Mitsui Chemicals, "ZEONOR" and "ZEONEX" manufactured by ZEON, and JSR Company-made "ARTON", etc.

The glass transition temperature (Tg) of the resin (A) is preferably 60 ° C or higher, and particularly preferably 70 ° C or higher. When the glass transition temperature of the resin (A) is 60 ° C. or higher, softening of the adhesive layer 30 can be further suppressed when the laminate is exposed to a high-temperature environment.

The resin (B) is at least one resin selected from the group consisting of a terpene-based resin, a rosin-based resin, and a petroleum resin. Specific examples of the terpene-based resin include a terpene resin, a terpene phenol resin, a modified terpene resin, a hydrogenated terpene resin, and a hydrogenated terpene phenol resin. Examples of the rosin-based resin include rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, and modified rosin. Examples of the petroleum resin include an aliphatic or aromatic petroleum resin, a hydrogenated petroleum resin, a denatured petroleum resin, an alicyclic petroleum resin, a coumarone-indene petroleum resin, and the like. Among them, hydrogenated terpene resin and hydrogenated petroleum resin are more preferable.

The softening point of the resin (B) is not particularly limited, but is preferably 80 to 160 ° C. When the softening point of the resin (B) is 80 ° C. or higher, softening can be suppressed when the laminate is exposed to a high-temperature environment, and adhesion failure will not occur. On the other hand, if the softening point of the resin (B) is 160 ° C. or lower, the peeling speed when the laminated body is peeled will be good.

The weight average molecular weight of the resin (B) is not particularly limited, but is preferably 300 to 3,000. When the weight average molecular weight of the resin (B) is 300 or more, the heat resistance becomes sufficient, and the amount of outgassing in a high-temperature environment decreases. On the other hand, when the weight average molecular weight of resin (B) is 3,000 or less, the peeling speed at the time of peeling a laminated body will become favorable. The weight average molecular weight of the resin (B) in the present embodiment means a molecular weight in terms of polystyrene measured by a gel permeation chromatography (GPC).

In addition, as the resin, a resin (A) and a resin (B) may be mixed. By mixing, heat resistance and peeling speed become favorable. For example, the mixing ratio of resin (A) and resin (B) is (A) :( B) = 80: 20 ～ 55: 45 (mass ratio), its peeling speed, thermal resistance in high temperature environment, and softness. It's better because it has good properties.

(Acrylic-styrene resin)
Examples of the acrylic-styrene resin include resins polymerized by using styrene or a derivative of styrene and (meth) acrylate as a monomer.

Examples of the (meth) acrylate include an alkyl (meth) acrylate having a chain structure, a (meth) acrylate having an aliphatic ring, and a (meth) acrylate having an aromatic ring. . Examples of the (meth) acrylic acid alkyl ester having a chain structure include an acrylic long-chain alkyl ester having an alkyl group having 15 to 20 carbon atoms, and an acrylic alkane having an alkyl group having 1 to 14 carbon atoms. Esters and the like. Examples of the acrylic long-chain alkyl ester include an alkyl group of n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-19-decyl, and n-icosyl And other alkyl esters of acrylic acid or methacrylic acid. The alkyl group may be branched.

Examples of the acrylic alkyl ester having an alkyl group having 1 to 14 carbon atoms include a well-known acrylic alkyl ester used in an existing acrylic adhesive. Examples include methyl, ethyl, propyl, butyl, 2-ethylhexyl, isooctyl, isononyl, isodecyl, dodecyl, dodecyl, and tridecyl. Alkyl ester of acrylic acid or methacrylic acid which is composed of

As the (meth) acrylate having an aliphatic ring, cyclohexyl (meth) acrylate, cyclopentyl (meth) acrylate, 1-adamantane (meth) acrylate, norbornyl (meth) Acrylate, isofluorenyl (meth) acrylate, tricyclodecane (meth) acrylate, tetracyclododecane (meth) acrylate, dicyclopentadiene (meth) acrylate, etc., but Isofluorenyl methacrylate and dicyclopentadiene (meth) acrylate are more preferred.

The (meth) acrylate having an aromatic ring is not particularly limited, but examples of the aromatic ring include phenyl, benzyl, tolyl, xylyl, biphenyl, naphthyl, anthracenyl, Phenoxymethyl, phenoxyethyl, etc. The aromatic ring may have a chain or branched alkyl group having 1 to 5 carbon atoms. Specifically, a phenoxyethyl acrylate is preferable.

(Maleimide resin)
Examples of the maleimide-based resin include N-methylmaleimide, N-ethylmaleimide, Nn-propylmaleimide, and N-isopropyl. Maleimide, Nn-butylmaleimide, N-isobutylmaleimide, N-sec-butylmaleimide, N-tert-butylmaleimide , Nn-pentylmaleimide, Nn-hexylmaleimide, Nn-heptylmaleimide, Nn-octylmaleimide, N-dodecylmaleimide N-Cyclopropylmaleimide, N-Cyclobutylmaleimide, N-Cyclopentyl Aliphatic hydrocarbon group based on maleimidine, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide, etc. Imine, with N-phenylmaleimide, Nm-methylphenylmaleimide, No-methylphenylmaleimide, Np-methylphenylmaleimide, etc. A resin obtained by polymerizing an aromatic maleimide or the like as a monomer.

For example, it is possible to use a polymer represented by the following chemical unit represented by the chemical formula [Chem. 10] and a polymer represented by the chemical unit represented by the following chemical formula [Chem. 11], that is, a cyclic olefin copolymer as a resin.

(In the above-mentioned chemical formula [Chem. 11], n is an integer of 0 or 1 to 3).
As such a cycloolefin copolymer, APL 8008T, APL 8009T, and APL 6013T (all manufactured by Mitsui Chemicals) can be used.

(Elastomer)
The elastomer preferably includes a styrene unit as a constituent unit of the main chain, and the "styrene unit" may have a substituent. Examples of the substituent include an alkyl group having 1 to 5 carbons, an alkoxy group having 1 to 5 carbons, an alkoxyalkyl group having 1 to 5 carbons, ethoxyl, carboxyl, and the like. The content of the styrene unit is more preferably within a range of 14% by weight or more and 50% by weight or less. The elastomer preferably has a weight average molecular weight in a range of 10,000 or more and 200,000 or less.

When the content of the styrene unit is 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, it will be easily dissolved in a hydrocarbon-based solvent described later. Therefore, the adhesive layer 30 can be removed more easily and quickly. In addition, the content of the styrene unit and the weight average molecular weight are within the above-mentioned ranges, so that when the wafer is supplied to the resist lithography process, the exposed resist solvents (for example, PGMEA, PGME, etc.), acids (hydrofluoric acid) Etc.) and alkali (TMAH, etc.) exhibit excellent resistance.

In addition, the above-mentioned (meth) acrylate may be further mixed in the elastomer.

The content of the styrene unit is more preferably 17% by weight or more, and more preferably 40% by weight or less.

The more preferable range of the weight average molecular weight is 20,000 or more, and the more preferable range is 150,000 or less.

As the elastomer, as long as the content of the styrene unit is in the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, various elastomers can be used. For example, polystyrene-poly (ethylene / propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene block can be used Segment copolymers (SBS), styrene-butadiene-butene-styrene block copolymers (SBBS), and their hydrides, styrene-ethylene-butene-styrene block copolymers (SEBS) Styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer ( SEEPS), styrene blocks are reactive cross-linked styrene-ethylene-ethylene-propylene-styrene block copolymers (Septon V9461 (Kuraray)), and styrene blocks are reactive cross-linked Styrene-ethylene-butene-styrene block copolymer (Septon V9827 (made by Kuraray) with a reactive polystyrene hard block), etc., and the content of the styrene unit and the weight average molecular weight are Within the above range.

In addition, hydrides are more preferred among elastomers. In the case of a hydride, the thermal stability is improved, and deterioration such as decomposition or polymerization is unlikely to occur. In addition, it is more preferable from the viewpoint of solubility in a hydrocarbon-based solvent and resistance to a resist solvent.

In addition, among the elastomers, a block polymer having styrene at both ends is more preferable. This is because styrene blocks having high thermal stability at both ends exhibit higher heat resistance.

More specifically, hydrides of elastomers, block copolymers of styrene and conjugated diene are more preferred. The thermal stability is improved, and it is not easy to cause deterioration such as decomposition or polymerization. In addition, styrene blocks having high thermal stability at both ends will exhibit higher heat resistance. From the viewpoint of solubility in a hydrocarbon-based solvent and resistance to a resist solvent, it is more preferable.

Examples of commercially available products that can be used as the elastomer included in the adhesive constituting the adhesive layer 30 include "Septon (trade name)" by Kuraray Corporation, "Hybrar (trade name)" by Kuraray Corporation, and Asahi Kasei "Tuftec (trade name)" made by the company, "DYNARON (trade name)" made by the JSR company, etc.

As the content of the elastomer contained in the adhesive constituting the adhesive layer 30, for example, the entire amount of the adhesive composition is set to 100 parts by weight, preferably 50 parts by weight or more, 99 parts by weight or less, and more preferably 60. It is more preferably within a range of 99 parts by weight or more, and preferably within a range of 70 parts by weight or more and 95 parts by weight or less. Within these ranges, the wafer and the support can be appropriately bonded while maintaining the heat resistance.

In addition, the elastomer may be a mixture of a plurality of types. That is, the adhesive constituting the adhesive layer 30 may include a plurality of types of elastomers. It is sufficient that at least one of the plurality of types of elastomers includes a styrene unit as a constituent unit of the main chain. In addition, as long as at least one of a plurality of types of elastomers has a styrene unit content of 14% by weight or more and 50% by weight or less, or a weight average molecular weight of 10,000 or more and 200,000 or less, It is within the scope of the present invention. In addition, when a plurality of types of elastomers are included in the adhesive constituting the adhesive layer 30, as a result of mixing, the content of the styrene unit may be adjusted to fall within the above-mentioned range. For example, if the content of styrene unit is 30% by weight of Septon 4033 manufactured by Kuraray Corporation, and the content of styrene unit is 13% by weight of Septon (trade name) Septon2063 is based on the weight ratio. The styrene content is 21 to 22% by weight based on the total amount of the elastomer contained in the adhesive, so it is 14% by weight or more. In addition, for example, when a styrene unit is 10% by weight and 60% by weight is mixed in a weight ratio of 1: 1, it becomes 35% by weight, which is within the above range. The present invention may have such a form. In addition, it is preferable that the plurality of types of elastomers included in the adhesive constituting the adhesive layer 30 all include the styrene unit within the above-mentioned range and have a weight average molecular weight within the above-mentioned range.

The adhesive layer 30 is preferably formed using a resin other than a photocurable resin (for example, a UV curable resin). By using a resin other than the photocurable resin, it is possible to prevent residues from remaining around the minute unevenness of the substrate 40 after peeling or removal of the adhesive layer 30. In particular, it is preferable that the adhesive constituting the adhesive layer 30 is not dissolved in any solvent, but is dissolved in a specific solvent. This is because it is not necessary to apply a physical force to the substrate 40, and the adhesive layer 30 can be removed by dissolving it in a solvent. When the adhesive layer 30 is removed, the adhesive layer 30 can be easily removed even from the substrate 40 whose strength has been reduced without breaking or deforming the substrate 40.

(Diluted solvent)
Examples of the diluent used when forming the adhesive layer 30 include linear chains such as hexane, heptane, octane, nonane, methyloctane, decane, undecane, dodecane, and tridecane. Hydrocarbons, bifurcated hydrocarbons with 4 to 15 carbons, such as cyclic hydrocarbons such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decalin, tetrahydronaphthalene, p-menthol Oxane, o-menthane, m-menthane, biphenylmenthane, 1,4-terpene diol, 1,8-terpene diol, pinane, norbornane, pinane, arborane, pinane, Longifolene, geraniol, nerol, linalool, citral, citronellol, menthol, isomenthol, neomenthol, α-terpineol, β-terpineol, γ-terpineol Alcohol, terpinen-1-ol, terpinen-4-ol, terpineol dihydroacetate, 1,4-eucalyptol, 1,8-eucalyptol, scopolamine, ecdysone, violet Terpenoid solvents such as ketones, thujone, camphor, d-limonene, l-limonene, dipentene; lactones such as γ-butyrolactone; acetone, methyl ethyl ketone, cyclohexanone (CH), methyl ethyl ketone Ketones such as n-pentyl ketone, methyl isoamyl ketone, 2-heptanone; ethylene glycol, diethyl Polyvalent alcohols such as diols, propylene glycol, and dipropylene glycol; ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate, etc. Compounds, such as monomethyl ethers, monoethyl ethers, monopropyl ethers, monobutyl ethers, etc., or ethers having monophenyl ethers, etc. Derivatives of polyvalent alcohols such as bonded compounds (of these, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) is preferred); cyclic ethers such as dioxane, or lactic acid Methyl, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxybutyl acetic acid, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethoxy Esters such as ethyl propionate; aromatics such as anisole, ethyl benzyl ether, tolyl methyl ether, diphenyl ether, dibenzyl ether, ethyl phenyl ether, butyl phenyl ether Department of organic solvents.

(Other ingredients)
The adhesive constituting the adhesive layer 30 may further include other substances having miscibility as long as the essential characteristics are not impaired. For example, conventional additives such as additional resins, plasticizers, adhesives, stabilizers, colorants, thermal polymerization inhibitors, and surfactants that can improve the performance of the adhesive can be used more.

The next layer 30 is formed by disposing a liquid body containing the above-mentioned materials on the reaction layer 20. For example, the support body 10 is placed on a platform such as a coating device, and the liquid nozzle is discharged onto the reaction layer 20 from the slot nozzle while the slit nozzle for discharging the liquid body is moved relative to the support body 10. Thereby, the adhesion layer 30 is formed on the entire surface of the reaction layer 20. The application method of the adhesive layer 30 is not limited to the slit nozzle method described above, and may be performed by, for example, a spin coating method, a dipping method, a roll knife method, a doctor blade method, a spray method, or the like. . In addition, after the adhesive layer 30 is coated on the reaction layer 20, it may be dried by heating or the like.

(Substrate)
The substrate 40 includes an electronic component 41 and a mold package 42. The electronic component 41 includes, for example, a wafer formed using a semiconductor or the like. In the laminated body 50 shown in FIG. 2 (A), the electronic components 41 are arranged on the bonding layer 30. In the multilayer body 50A shown in FIG. 2 (B), the electronic component 41 is disposed on the reaction layer 20.

Moulded 42 holds the electronic component 41. In the laminated body 50 shown in FIG. 2 (A), the mold seal 42 is formed so as to cover the entire surface of the substrate formation surface 130 including the adhesive layer 30 of the electronic component 41. In addition, in the laminated body 50A shown in FIG. 2 (B), the mold seal 42 is formed so as to cover the entire surface of the substrate forming surface 120 including the reaction layer 20 including the electronic component 41. With the mold seal 42, the electronic component 41 is held in a state of being embedded in the mold seal 42. The mold seal 42 may be formed so that a part (for example, the upper surface) of the electronic component 41 is exposed. In addition, the mold seal 42 may be formed using, for example, a material capable of transmitting light that deteriorates the reaction layer 20. Examples of such a material include glass, silicon, and acrylic resin. The electronic component 41 may not be disposed on the substrate 40. When the electronic component 41 is not arranged, for example, a mold seal 42 may be simply formed on the bonding layer 30, or an electronic circuit formed by rewiring may be formed on the mold seal 42. That is, the formed substrate 40 may not include the electronic component 41.

When the substrate 40 is manufactured, first, a plurality of electronic components 41 are arranged on the bonding layer 30. The number of the electronic components 41 is arbitrary. In the case of the laminated body 50 shown in FIG. 2 (A), the electronic component 41 is adhered by the adhesive layer 30. Thereafter, the mold seal 42 is formed so as to cover the entire surface of the bonding layer 30 including the electronic component 41. In the multilayer body 50A shown in FIG. 2 (B), a plurality of electronic components 41 are arranged on the reaction layer 20. Thereafter, the mold seal 42 is formed so as to cover the entire surface of the reaction layer 20 including the electronic component 41.

In addition, a part of the mold seal 42 is removed by grinding or the like from the state in which the electronic component 41 is embedded in the mold seal 42, so that a part (for example, the upper surface) of the electronic component 41 can be exposed. The substrate 40 is not limited to a single layer in which the electronic components 41 are arranged. For example, on the mold seal 42 where the electronic component 41 is disposed, the electronic component 41 may be further disposed to form the mold seal 42. The layer in which the electronic component 41 is arranged in this manner may be stacked in two or more layers. In addition, the laminated electronic components 41 may be electrically connected by wiring or the like formed by a patterning method or the like.

＜ Retainer ＞
FIG. 3 illustrates an example of a holder that holds the laminated bodies 50 and 50A (or the substrate 40) configured as described above. FIG. 3 (A) is a perspective view of the holder that holds the laminated bodies 50 and 50A. FIG. 3 (B ) Is a cross-sectional view taken along the line AA in FIG. 3 (A). An example of the case where the holder 60 holds the laminated body 50 is shown in FIG. 3. The same applies to the laminated body 50A. In addition, the holder 60 holds the substrate 40 from which the support body 10 is peeled from the laminated bodies 50 and 50A. The form of the holder 60 holding the substrate 40 is disclosed in FIG. 6 (B).

The holder 60 holds, for example, the laminated body 50 in a state in which the substrate 40 is attached to the peeling unit 3, and is processed by the peeling unit 3 to hold the laminated body 50 after the support 10 is peeled from the laminated body 50. Substrate 40. The holder 60 is used, for example, for processing and transporting the substrate 40 after the peeling unit 3. The holding (attachment) of the laminated body 50 or the substrate 40 of the holder 60 may be performed by the peeling unit 3, or may be performed by a light irradiation unit 2 other than the peeling unit 3. In addition, a dedicated unit for peeling the support body 10 from the laminated body 50 may be provided. This dedicated unit may be included in the substrate processing apparatus 1.

The laminated body 50 may be transported to the substrate processing apparatus 1 while being held in the holder 60, for example. That is, a dedicated unit for holding the laminated body 50 by the holder 60 may be arranged differently from the substrate processing apparatus 1. As shown in FIGS. 3 (A) and 3 (B), the holder 60 includes a film 61 and a ring 62. The film 61 is formed using an elastically deformable material such as resin. The film 61 is formed in a disk shape so as to fit the outer peripheral shape of the ring 62, for example.

The ring 62 has a circular shape and is formed using a material having high rigidity such as resin or metal. The ring 62 is fixed in a state of being adhered to the surface 61 a of the film 61 with an adhesive or the like, and is designed so as not to fall off from the film 61 easily. In addition, the laminated body 50 is held in a state where the region surrounded by the ring 62 among the surfaces 61 a of the film 61 is adhered by an adhesive or the like. The laminated body 50 is adhered to the surface 61 a of the film 61 on the substrate 40 side. The adhesive used here is, for example, a material having an adhesive force capable of peeling the substrate 40 from the film 61.

The substrate 40 after the support body 10 is peeled off from the laminated body 50 is thinner than the laminated body 50 and loses the rigidity of the supporting body 10, so there is a possibility of damage such as cracking during various processes or during transportation. . Therefore, in the peeling unit 3 for peeling the support 10 from the laminate 50, the holder 60 is used to hold the laminate 50 before the support 10 is peeled off. In this state, the support 10 is peeled from the substrate 10, and This enables the holder 60 to hold the substrate 40 and prevents damage to the substrate 40 and the like. In addition, after the support body 10 is peeled from the laminated body 50 from the substrate 40, the substrate 40 may be attached to the holder 60. The substrate 40 is surrounded by the ring 62 of the holder 60 with high rigidity, and is supported by the elastically deformable film 61. Therefore, the subsequent processing or transportation can be slowed down by punching, vibration, etc., and damage can be avoided. In addition, it is sufficient to hold the holder 60 or the like during various processes or transfers, and it is possible to prevent a robot arm or the like from directly contacting the substrate 40.

The substrate 40 (layered body 50) is not limited to being held by the holder 60 as shown in FIG. 3. For example, the substrate 40 may be directly processed in the first cleaning unit 4, the second cleaning unit 5, or the third cleaning unit 6 without being held by a holder or the like in the substrate processing apparatus 1. The peeling unit 3 is transported by the transport unit 7. In addition, when the substrate 40 is carried out from the substrate processing apparatus 1, the substrate 40 may be carried out while being held in the holder 60, such as being housed in a box or the like, or may be carried in the state where the holder 60 is removed. Move out.

<For substrate processing method for laminated body 50>
Next, a substrate processing method according to this embodiment will be described. FIG. 4 is a schematic flowchart of an example of a substrate processing method according to the embodiment. This substrate processing method is performed in the substrate processing apparatus 1. As shown in FIG. 4, the substrate processing method includes a light irradiation process S10, a peeling process S20, and a substrate cleaning process S30. Each of the light irradiation process S10, the peeling process S20, and the substrate cleaning process S30 is performed in the substrate processing apparatus 1. In the following examples, a laminated body 50 (refer to FIG. 2 (A)) including an adhesive layer 30 is first described as an example.

(Light irradiation process)
In the light irradiation process S10, the laminated body 50 is irradiated with light, whereby the reaction layer 20 is modified. The light irradiation process S10 is performed in the light irradiation unit 2 of the substrate processing apparatus 1. FIG. 5 illustrates an example of the light irradiation unit 2 and the light irradiation process S10. FIG. 5 (A) is a diagram of the overall irradiation of light to the laminated body 50, and FIG. 5 (B) is a situation of the scanned light to the laminated body 50 Illustration. The transport of the laminated body 50 to the light irradiation unit 2 is performed by the transport unit 7.

As shown in FIG. 5 (A), for the light irradiating unit 2, for the layered body 50 placed on the mounting table 2a, the reaction layer 20 is faced to the reaction layer 20 from the side opposite to the substrate 40, that is, from the bottom surface 10b of the support body 10. The light L is irradiated by the irradiation device 2a. As described above, the irradiating device 2a irradiates light L having a wavelength that can modify the reaction layer 20. By the light irradiation process S10, the reaction layer 20 is deteriorated to form a deteriorated layer (or deteriorated portion) 20a (see FIG. 6 (A) and the like). The strength of the modified layer 20 a or the adhesion force to the support 10 is lower than that of the reaction layer 20. In addition, as shown in FIG. 5 (A), the altered layer 20a does not need to be formed across the entire depth direction, and may be formed in at least a region of the reaction layer 20 that is in contact with the support body 10. FIG. 5 (A) shows an example of a case where the modified layer 20a is formed in a part of the reaction layer 20 in contact with the support body 10.

The irradiation device 2 a includes an optical element (not shown) so as to irradiate the entire surface of the multilayer body 50 with the light L. The irradiating device 2a can be designed so that the whole surface of the reaction layer 20 may be irradiated with the light L, but it is not limited to this. For example, the irradiating device 2a may use a method in which light L is not irradiated to the entire surface of the laminated body 50, but an area equal to a fraction of the entire surface of the laminated body 50, and the light is emitted. The irradiation position of L is stepped to irradiate the entire surface of the laminated body 50 with the light L. In addition, as shown in FIG. 5 (B), for example, an irradiation device 2b that can irradiate the surface of the laminated body 50 with spot light as the light L may be used. The irradiating device 2 b moves the light L of the spot light relative to the layered body 50, so that the light L can be irradiated across the entire scanning of the reaction layer 20. In FIG. 5 (B), the configuration of scanning the light L by shaking the irradiation device 2b is exemplified, but the configuration is not limited to this. For example, the irradiation device 2b may be configured to scan the light L by sliding it, or may be configured to scan the light L by using an optical element such as a galvanometer mirror.

After the light irradiation process S10 is performed, a transportation process is performed in which the laminate 50 in which the deteriorated layer 20 a is formed on the reaction layer 20 is transferred from the light irradiation unit 2 to the peeling unit 3 by the transfer device 7 a of the transfer unit 7. In the peeling unit 3, the laminated body 50 conveyed by the conveyance apparatus 7a is hold | maintained by the holder 60 shown in FIG. For example, the laminated body 50 may be conveyed to the holder 60 previously arranged on the fixing table 3b of the peeling unit 3 by the conveying device 7a, and may be placed on the holder 60 by the conveying device 7a. Attach to the film 61.

(Stripping process)
In the peeling process S20, the substrate 40 is peeled from the support body 10. The peeling process S20 is performed in the peeling unit 3 of the substrate processing apparatus 1. FIG. 6 shows an example of the peeling unit 3 and a peeling process. FIG. 6 (A) is a view before the support 10 is peeled, and FIG. 6 (B) is a view after the support 10 is peeled.

In the peeling process S20, first, the holder 60 is fixed to the fixing table 3b arranged in the peeling unit 3 by vacuum suction or the like. Since the laminated body 50 is adhered to the holder 60, the laminated body 50 is in a state of being held on the fixing table 3 b. After the holder 60 is fixed, as shown in FIG. 6 (A), the bottom surface 10b of the support 10 opposite to the reaction layer forming surface 110 is vacuum-adsorbed by the adsorption device 3a. In this state, by moving the adsorption device 3 a upward, as shown in FIG. 6 (B), the support body 10 is lifted from the substrate 40 with the reaction layer 20 as a separation surface. The deteriorated layer 20a in the reaction layer 20 is reduced in intensity by the irradiation of light L, or its adhesive force is lowered, and it is easily destroyed by the upward movement of the adsorption device 3a, or the adhesive surface is easily peeled off. Thereby, the support body 10 can be easily peeled from the substrate 40. By the peeling process S20, the support body 10 is peeled from the reaction layer 20 of the laminated body 50.

After the peeling process S20 is performed, a transfer process is performed, that is, the substrate 40 from which the support body 10 is peeled is still held by the holder 60, and is transferred from the peeling unit 3 to the first washing by the transfer device 7 a of the transfer unit 7 The cleaning unit 4, the second cleaning unit 5, or the third cleaning unit 6.

(Substrate cleaning process)
The substrate cleaning process S30 includes a liquid cleaning process and a plasma cleaning process. In the liquid washing process, the substrate 40 peeled from the support 10 is washed with a liquid. In the plasma cleaning process, the substrate 40 peeled from the support 10 is treated with a plasma. In the substrate cleaning process S30, the liquid cleaning process and the plasma cleaning process can be performed in a predetermined order. Specifically, the substrate cleaning process S30 can be performed in any one of the following production lines A to D. Production line A is a case where liquid washing process S31 is performed, followed by plasma washing process S32. Production line B is for liquid washing process S33, followed by plasma washing process S34, and liquid washing process S35. In line C, plasma washing process S36 is performed, and then liquid washing process S37 is performed. Production line D is a plasma cleaning process S38, followed by a liquid cleaning process S39, and then a plasma cleaning process S40. Hereinafter, the production line A to the production line D will be described in order.

(Line A)
In line A, after the liquid washing process S31 is performed, the plasma washing process S32 is performed. When each process of the production line A is performed, in the transfer process after the stripping process S20 is performed, the substrate 40 from which the support body 10 is peeled is transferred from the peeling unit 3 by the transfer device 7 a of the transfer unit 7. To the first washing unit 4. After the substrate 40 is transferred to the first cleaning unit 4, the liquid cleaning process S31 is performed in the first cleaning unit 4. FIG. 7 shows an example of the first cleaning unit 4 and the liquid cleaning process S31. FIG. 7 (A) is a view showing a state where the substrate 40 is being cleaned by the liquid, and FIG. 7 (B) is a view after the liquid cleaning process S31 The substrate 40 is a schematic diagram.

As shown in FIG. 7 (A), in the liquid cleaning process S31, first, while the ring 62 is maintained at a predetermined height, the substrate 40 is lifted from below the film 61 by the lifting device 4a, and a relative In the ring 62, the substrate 40 is projected upward. In this case, the upper portion of the ring 62 is supported by the support portion 4b, so that the substrate 40 can easily protrude above the ring 62. The film 61 is in a state of being elastically deformed and extended. In addition, the state shown in FIG. 7 (A) may be created by pushing the ring 62 downward with the support portion 4b while holding the substrate 40 at a predetermined height. In the liquid cleaning process S31 and the first cleaning unit 4, whether the substrate 40 is lifted to the ring 62 is optional, and the substrate 40 may be processed without lifting the substrate 40 with respect to the ring 62.

Next, in a state where the substrate 40 is lifted up, the cleaning liquid R1 is discharged from the cleaning liquid nozzle 4 c to the reaction layer 20. As the washing liquid R1, as described above, for example, one or more selected from the group consisting of a hydrocarbon-based organic solvent, a nitrogen-containing organic solvent, an ether-based solvent, and an ester-based solvent in which the reaction layer 20 and the adhesive layer 30 are dissolved can be used. Solvent. The cleaning liquid R1 discharged from the cleaning liquid nozzle 4c flows down to the membrane 61 side while dissolving the reaction layer 20 and the adhesive layer 30, and drops from the ring 62. The washing liquid R1 dropped from the ring 62 is collected by a collection unit (not shown).

By the washing liquid R1, the undeteriorated portion of the reaction layer 20 and the adhesive layer 30 are dissolved and removed. In addition, although the altered layer 20a in the reaction layer 20 is not dissolved in the cleaning solution R1, it is washed away by the cleaning solution R1 and is mostly removed from the substrate 40. Alternatively, the cleaning solution R1a that dissolves the reaction layer 20 and the cleaning solution R1b that dissolves the adhesive layer 30 may be switched from the cleaning solution nozzle 4c. In this case, the cleaning solution R1a which dissolves the reaction layer 20 may be discharged first, and then the cleaning solution R1b which dissolves the adhesion layer 30 may be discharged. In addition, the cleaning liquid nozzle 4c may discharge only the cleaning liquid R1b which melt | dissolved the adhesion layer 30. In this case, the adhesive layer 30 is dissolved by the cleaning solution R1b, whereby the reaction layer 20 on the adhesive layer 30 is also removed from the substrate 40 due to the flow of the cleaning solution R1b.

For example, as shown in FIG. 7 (B), the substrate 40 after the liquid cleaning process S31 is performed may leave a part of the deteriorated layer 20a (reaction layer 20) unwashed. In view of this, in the transfer process after the liquid cleaning process S31 is performed, the substrate 40 is transferred to the second cleaning unit 5. After the substrate 40 is transferred to the second cleaning unit 5, the substrate 40 is subjected to a plasma cleaning process S32 in the second cleaning unit 5. In the plasma cleaning process S32, a part of the deteriorated layer 20a (reaction layer 20) remaining on the substrate 40 is removed.

FIG. 8 shows an example of the second cleaning unit 5 and the plasma cleaning process S32. FIG. 8 (A) is a diagram showing a state where the substrate 40 is being cleaned by a plasma, and FIG. 8 (B) is a plasma cleaning process The rear substrate 40 is a schematic diagram. As shown in FIG. 8 (A), in the plasma cleaning process S32, in a state where the holder 60 is placed on the platform 5b, the space on the substrate 40 causes the plasma 5a to be generated from a plasma generating device (not shown). produce. The plasma 5a is, for example, an oxygen plasma. As a result of this plasma 5a, as shown in FIG. 8 (B), a part of the modified layer 20a (reaction layer 20) remaining on the substrate 40 is processed and removed from the substrate 40. In the production line A, the substrate 40 is processed in this manner.

(Line B)
In line B, the liquid washing process S33 is performed to perform the liquid washing process S34, and then the liquid washing process S35 is performed. When each process of the production line B is performed, in the transfer process after the peeling process S20 is performed, the substrate 40 from which the support 10 is peeled is transferred from the peeling unit 3 by the transfer device 7 a of the transfer unit 7. To the third washing unit 6. The liquid washing process S33 is performed in the third washing unit 6. FIG. 9 shows an example of the third cleaning unit 6 and the liquid cleaning process S33. FIG. 9 (A) is a view showing a state where the substrate 40 is being cleaned by the liquid, and FIG. 9 (B) is a view after the liquid cleaning process S33 The substrate 40 is a schematic diagram.

As shown in FIG. 9 (A), in the liquid washing process S33, like the liquid washing process S31 of the production line A, the upper side of the ring 62 is supported at a predetermined height by the support portion 6b, and the lifting device 6a is lifted from the The substrate 40 is lifted below the film 61 to create a state where the substrate 40 projects upward with respect to the ring 62. In addition, the state shown in FIG. 9 (A) may be created by pushing the ring 62 downward with the support portion 6b while holding the substrate 40 at a predetermined height. In the liquid cleaning process S33 and the third cleaning unit 6, whether the substrate 40 is lifted to the ring 62 is optional, and the substrate 40 may be processed without lifting the substrate 40 with respect to the ring 62.

Next, in a state where the substrate 40 is lifted, the cleaning solution R2 is discharged from the cleaning solution nozzle 6 c to the reaction layer 20. The cleaning liquid R2 is used for flushing the deteriorated layer 20 a of the reaction layer 20 from the reaction layer 20. As the washing liquid R2, for example, water or the like can be used in addition to the same liquid as the washing liquid R1 described above. The cleaning liquid R2 discharged from the cleaning liquid nozzle 6c flows through the reaction layer 20 and falls to the film 61 side. By this washing liquid R2, as shown in FIG. 9 (B), the deteriorated layer 20a in the reaction layer 20 is removed by scouring, and the undegraded portion of the reaction layer 20 remains in the state of the adhesive layer 30.

After the liquid cleaning process S33, the substrate 40 is transferred from the third cleaning unit 6 to the second cleaning unit 5 by the transfer device 7a during the transfer process. After the substrate 40 is transferred to the second cleaning unit 5, a plasma cleaning process S34 is performed in the second cleaning unit 5. FIG. 10 shows another example of the second cleaning unit 5 and the plasma cleaning process S34. FIG. 10 (A) is a diagram showing a state where the substrate 40 is being cleaned by the plasma 5a, and FIG. 10 (B) is a plasma cleaning Schematic diagram of the substrate 40 after the clean process S34.

As shown in FIG. 10 (A), in the plasma cleaning process S34, in a state where the holder 60 is placed on the platform 5b, the plasma is generated from a plasma generator not shown in the space on the bonding layer 30. 5a is generated. The plasma 5a is, for example, an oxygen plasma. By this plasma 5a, as shown in FIG. 10 (B), the undeteriorated part of the reaction layer 20 remaining on the adhesive layer 30 is processed and removed from the substrate 40. In addition, the powder 20b generated when the reaction layer 20 is treated with the plasma 5a may remain on the adhesion layer 30 slightly.

After the plasma cleaning process S34 is performed, the substrate 40 is transferred from the second cleaning unit 5 to the first cleaning unit 4 by the transfer device 7a during the transfer process. After the substrate 40 is transferred to the first cleaning unit 4, the liquid cleaning process S35 is performed in the first cleaning unit 4. FIG. 11 shows another example of the first cleaning unit 4 and the liquid cleaning process S35. FIG. 11 (A) is a view showing a state where the substrate 40 is being cleaned with the liquid, and FIG. 11 (B) is a view showing the liquid cleaning process S35 Schematic of the substrate 40.

As shown in FIG. 11 (A), in the liquid washing process S35, like the above-mentioned liquid washing process S33, the upper side of the ring 62 is supported at a predetermined height by the support portion 4b, and the film 61 is lifted by the lifting device 4a. The substrate 40 is lifted below to create a state where the substrate 40 projects upward with respect to the ring 62. In addition, the state shown in FIG. 11 (A) may be created by pushing the ring 62 downward with the support portion 6b while the substrate 40 is held at a predetermined height. In the liquid cleaning process S35 and the first cleaning unit 4, whether the substrate 40 is lifted to the ring 62 is optional, or the substrate 62 may be processed without lifting the substrate 40.

Next, in a state where the substrate 40 is lifted up, the cleaning liquid R3 is discharged from the cleaning liquid nozzle 4 c to the adhesive layer 30. As the cleaning solution R3, as described above, an organic solvent or the like that can dissolve the adhesive layer 30 can be used. The cleaning liquid R3 discharged from the cleaning liquid nozzle 4c flows through the adhesive layer 30 and falls down to the film 61 side. As shown in FIG. 11 (B), the cleaning solution R3 is then used to remove and remove the layer 30. In addition, with the cleaning solution R3, with the removal of the adhesive layer 30, the powder 20b of the reaction layer 20 remaining on the adhesive layer 30 is washed away. In the production line B, the substrate 40 is processed in this manner.

(Line C)
In line C, after the plasma washing process S36 is performed, the liquid washing process S37 is performed. When each process of the production line C is performed, in the transfer process after the peeling process S20 is performed, the substrate 40 from which the support 10 is peeled is transferred from the peeling unit 3 by the transfer device 7 a of the transfer unit 7. To the second washing unit 5. After the substrate 40 is transferred to the second cleaning unit 5, a plasma cleaning process S36 is performed in the second cleaning unit 5. FIG. 12 illustrates another example of the second cleaning unit 5 and the plasma cleaning process S36. FIG. 12 (A) is a diagram showing a state where the substrate 40 is being cleaned by the plasma 5a, and FIG. 12 (B) is a plasma cleaning Schematic diagram of the substrate 40 after the clean process S36.

As shown in FIG. 12 (A), the plasma washing process S36, like the plasma washing process S34 in the production line B, is carried on the bonding layer 30 with the holder 60 placed on the platform 5b. The space generates a plasma 5a from a plasma generating device (not shown). The plasma 5a is, for example, an oxygen plasma. As a result of this plasma 5a, as shown in FIG. 12 (B), a part of the reaction layer 20 is processed and removed from the substrate 40. In addition, the powder 20b of the reaction layer 20 or the modified layer 20a may remain on the adhesion layer 30 slightly.

After the plasma cleaning process S36 is performed, the substrate 40 is transferred from the second cleaning unit 5 to the first cleaning unit 4 by the transfer device 7a during the transfer process. After the substrate 40 is transferred to the first cleaning unit 4, the first cleaning unit 4 performs a liquid cleaning process S37. FIG. 13 illustrates another example of the first cleaning unit 4 and the liquid cleaning process S37. FIG. 13 (A) is a diagram showing a state where the substrate 40 is being cleaned by the liquid, and FIG. 13 (B) is a view after the liquid cleaning process S37 Schematic of the substrate 40.

As shown in FIG. 13 (A), in the liquid washing process S37, like the liquid washing process S37 described above, the upper portion of the ring 62 is supported at a predetermined height by the support portion 4b, and the device 4a is lifted from the film 61 The substrate 40 is lifted downward to create a state where the substrate 40 projects upward with respect to the ring 62. In addition, the state shown in FIG. 13 (A) may be created by pushing the ring 62 downward with the support portion 6b while holding the substrate 40 at a predetermined height. In the liquid cleaning process S37 and the first cleaning unit 4, whether the substrate 40 is lifted to the ring 62 is optional, and the substrate 40 may be processed without lifting the substrate 40 with respect to the ring 62.

Next, in a state in which the substrate 40 is lifted, the cleaning liquid R4 is discharged from the cleaning liquid nozzle 4 c to the adhesive layer 30. As described above, the cleaning solution R4 can use one or more solvents selected from the group consisting of a hydrocarbon-based organic solvent, a nitrogen-containing organic solvent, an ether-based solvent, and an ester-based solvent that can dissolve the adhesive layer 30. The cleaning liquid R4 discharged from the cleaning liquid nozzle 4c flows through the adhesive layer 30 and falls to the film 61 side. As shown in FIG. 13 (B), the cleaning solution R4 is then used to remove and remove the layer 30. In addition, with the removal of the adhesive layer 30 by the cleaning solution R4, the powder 20b of the reaction layer 20 or the modified layer 20a remaining on the adhesive layer 30 is washed away. In the production line C, the substrate 40 is processed in this manner.

(Line D)
In line B, the plasma cleaning process S38 is performed, and the liquid cleaning process S39 is performed, and then the plasma cleaning process S40 is performed. When each process of the production line D is performed, in the transfer process after the peeling process S20 is performed, the substrate 40 from which the support body 10 is peeled is transferred from the peeling unit 3 by the transfer device 7 a of the transfer unit 7. To the second washing unit 5. After the substrate 40 is transferred to the second cleaning unit 5, a plasma cleaning process S38 is performed in the second cleaning unit 5. The plasma washing process S38, like the plasma washing process S36 in the production line C, generates the plasma 5a in the space on the bonding layer 30 while the holder 60 is placed on the platform 5b (refer to the figure) 12 (A)). With this plasma 5a, a part of the reaction layer 20 is processed and removed from the substrate 40 (see FIG. 12 (B)).

After the plasma cleaning process S38 is performed, the substrate 40 is transferred from the second cleaning unit 5 to the first cleaning unit 4 by the transfer device 7a during the transfer process. After the substrate 40 is transferred to the first cleaning unit 4, the liquid cleaning process S39 is performed in the first cleaning unit 4. In the liquid washing process S39, as in the liquid washing process S37 of the production line C, the upper part of the ring 62 is supported by the supporting part 4b, and the substrate 40 is lifted from below the film 61 by the lifting device 4a, thereby creating a relative A state in which the substrate 40 projects upward with respect to the ring 62 (see FIG. 13 (A)).

Next, in a state where the substrate 40 is lifted, the same cleaning liquid as the cleaning liquid R4 is discharged from the cleaning liquid nozzle 4c to the adhesive layer 30. The cleaning liquid R4 discharged from the cleaning liquid nozzle 4c flows through the adhesive layer 30 and falls to the film 61 side. With the washing liquid, the subsequent layer 30 is dissolved and removed (see FIG. 13 (B)). In addition, with the removal of the adhesive layer 30 by the cleaning solution R4, the powder 20b of the reaction layer 20 or the modified layer 20a remaining on the adhesive layer 30 is washed away.

FIG. 14 is another schematic diagram of the substrate 40 after the plasma cleaning process S38 and the liquid cleaning process S39 are performed in the production line D. FIG. As shown in FIG. 14, after the plasma cleaning process S38 and the liquid cleaning process S39 are performed, the powder 20 b of the reaction layer 20 or the modified layer 20 a may remain on the substrate 40 slightly. In view of this, after the liquid cleaning process S39 is performed, the substrate 40 is transferred to the second cleaning unit 5 in the transfer process. After the substrate 40 is transferred to the second cleaning unit 5, the substrate 40 is subjected to a plasma cleaning process S40 in the second cleaning unit 5. FIG. 15 shows another example of the second cleaning unit 5 and the plasma cleaning process S40. FIG. 15 (A) is a diagram showing a state where the substrate 40 is being cleaned by a plasma, and FIG. 15 (B) is a plasma cleaning Schematic diagram of the substrate 40 after the process S40.

As shown in FIG. 15 (A), the plasma washing process S40, like the plasma washing process S38, is in a state where the holder 60 is placed on the platform 5b, and the space on the next layer 30 is never shown. The plasma generating device generates the plasma 5a. The plasma 5a is, for example, an oxygen plasma. By this plasma 5a, as shown in FIG. 15 (B), the powder 20b of the reaction layer 20 or the modified layer 20a remaining on the adhesion layer 30 is processed and removed from the substrate 40. In the production line D, the substrate 40 is formed in this manner.

As described above, according to the substrate processing apparatus 1 and the substrate processing method of this embodiment, the liquid cleaning processes S31, S33, S35, S37, and S39 performed by the first cleaning unit 4 and the second cleaning unit 5 The plasma cleaning processes S32, S34, S36, S38, and S40 are performed to reliably remove the reaction layer 20 or the modified layer 20a (residue) remaining on the substrate 40, thereby reducing the impact on subsequent processing. In addition, it is possible to prevent the residue from being scattered from the substrate 40 to pollute the surrounding environment.

<Arrangement of Units of the Substrate Processing Apparatus for Processing the Layered Body 50>
FIG. 16 is a schematic diagram showing an example of the arrangement of each unit of the substrate processing apparatus 1. In FIG. 16, the directions in the figure are explained using the XYZ coordinate system. In this XYZ coordinate system, the vertical direction is set to the Z direction, and the horizontal direction is set to the X direction and the Y direction. For each of the X, Y, and Z directions, the direction indicated by the arrow is referred to as the + direction (for example, + X direction), and the opposite direction is referred to as the-direction (for example, -X direction). The substrate processing apparatus 1 shown in FIG. 16 processes a laminated body 50 including an adhesive layer 30. The substrate processing apparatus 1 includes the light irradiation unit 2, the peeling unit 3, the first cleaning unit 4, the second cleaning unit 5, the third cleaning unit 6, and the transfer unit 7. In addition, the substrate processing apparatus 1 includes a loading port 8 on which a container (for example, FOUP, etc.) for storing a plurality of laminates 50 or substrates 40 is loaded, and a load for carrying in or out of the laminates 50 or substrates 40 or temporarily storing them Port 9.

The substrate processing apparatus 1 has a rectangular shape which is longer in one direction (Y direction) in a plan view. In the substrate processing apparatus 1, a peeling unit 3, a light irradiation unit 2, a first cleaning unit 4, and a second cleaning unit 5 are arranged on the + X side toward the + Y direction. In the substrate processing apparatus 1, a third cleaning unit 6 and a second cleaning unit 5 are arranged on the −X side in the + Y direction. The light irradiation unit 2 is disposed on the + X side in the substrate processing apparatus 1 and is sandwiched by the peeling unit 3 and the first cleaning unit 4 in a plan view. The first cleaning unit 4 is disposed on the + X side in the substrate processing apparatus 1 and is sandwiched by the light irradiation unit 2 and the second cleaning unit 5 in a plan view.

The substrate processing apparatus 1 shown in FIG. 16 includes two second cleaning units 5. In this case, for example, when the plasma washing process takes time, the second washing unit 5 using two units can be used alternately to improve the processing efficiency. In addition, one of the two second washing units 5 may be used as a main unit, and the other may be used as a standby unit used when the main unit fails.

On the substrate processing apparatus 1, loading ports 8 and 9 are arranged on the −Y side. The loading ports 8 and 9 are arranged side by side in the X direction on the -Y side of the substrate processing apparatus 1. The transfer unit 7 includes a transfer device 7 a that transfers the laminate 50 or the substrate 40, and a transfer path 7 b that is a movement path of the transfer device 7 a. The conveying device 7a can be moved between the units or between the loading ports 8 and 9 and the units by a rail (not shown) or the like provided on the conveying path 7b. The transfer device 7 a includes a robot arm (not shown) that can hold the laminated body 50 or the substrate 40. The conveyance path 7b is provided in the substrate processing apparatus 1 in the X direction on the -Y side, and is provided in the Y direction between the column of the + X side cells and the column of the -X side cells. The conveyance path 7b is formed in a T shape. The conveyance device 7a moves the conveyance path 7b to receive and receive the laminated body 50 or the substrate 40 between the units or between the loading ports 8 and 9 and the units.

According to the substrate processing apparatus 1 configured as described above, the laminated body 50 or the substrate 40 is efficiently transferred to each unit by the transfer unit 7, so that the above-mentioned light irradiation process S10, peeling process S20, and Each process of the substrate cleaning process S30. In addition, in the substrate cleaning process S30, the liquid cleaning processes S31, S33, S35, S37, and S39, and the plasma cleaning processes S32, S34, S36, S38, and S40 can be performed efficiently. In addition, in the substrate processing apparatus 1, the area CON is an area for accommodating a control substrate or the like.

＜ Substrate processing method for laminated body 50A ＞
Next, a substrate processing method for the laminated body 50A not including the adhesive layer 30 will be described. FIG. 17 is a schematic flowchart of another example of a substrate processing method according to the embodiment. This substrate processing method is performed in the substrate processing apparatus 1 like the laminated body 50. As shown in FIG. 17, the substrate processing method for the laminate 50A not including the adhesive layer 30 includes a light irradiation process S50, a peeling process S60, a liquid cleaning process S70, and a plasma cleaning process S80. In addition, after the plasma washing process S80, a liquid washing process S90 can also be performed.

(Light irradiation process)
In the light irradiation process S50, the laminated body 50A is irradiated with light, whereby the reaction layer 20 is deteriorated. The light irradiation process S50 is performed in the light irradiation unit 2 of the substrate processing apparatus 1. FIG. 18 shows an example of the light irradiation unit 2 and the light irradiation process S50. FIG. 18 (A) is a diagram of the overall irradiation of light to the laminated body 50A, and FIG. 18 (B) is a situation of the laminated body 50A to scan light Illustration. The transport of the layered body 50A to the light irradiation unit 2 is performed by the transport unit 7.

As shown in FIG. 18 (A), the light irradiation unit 2 is the same as the light irradiation process S10 for the laminated body 50 described above. For the laminated body 50A placed on the mounting table 2a, the side from the substrate 40 is That is, the reaction layer 20 is irradiated with the light L from the bottom surface 10b of the support 10 by the irradiation device 2a. The light L is similar to the light irradiation process S10 described above. By the light irradiation process S50, the reaction layer 20 is deteriorated to form a deteriorated layer (or deteriorated portion) 20a. The modified layer 20 a is similar to the light irradiation process S10 described above, and its strength or adhesive force to the support 10 is lower than that of the reaction layer 20. In addition, as shown in FIG. 18 (A), the modified layer 20a does not need to be formed across the entire depth direction, and may be formed in a part of the reaction layer 20 in contact with the support 10. FIG. 18 (A) shows an example of a case where the modified layer 20a is formed in a part of the reaction layer 20 in contact with the support body 10.

The structure of the light irradiation unit 2 is the same as above, so the explanation is simplified, but as shown in FIG. 18 (A), the entire irradiation of the light L by the irradiation device 2a can be performed on the laminated body 50, as shown in FIG. 18 (B ), The light L irradiating the spot light is scanned by the irradiation device 2b. After the light irradiation process S50 is performed, a transportation process is performed in which the laminated body 50A in which the deteriorated layer 20a is formed on the reaction layer 20 is transferred from the light irradiation unit 2 to the peeling unit 3 by the transfer device 7a of the transfer unit 7. In the peeling unit 3, the laminated body 50A conveyed by the conveyance device 7a is hold | maintained by the holder 60 shown in FIG. For example, the laminated body 50A may be transported to the holder 60 previously arranged on the fixing table 3b of the peeling unit 3 by the conveying device 7a, and may be placed on the holder 60 by the conveying device 7a. Attach to the film 61.

(Stripping process)
The peeling process S60 peels the board | substrate 40 from the support body 10. The peeling process S60 is performed in the peeling unit 3 of the substrate processing apparatus 1. FIG. 19 shows an example of the peeling unit 3 and the peeling process S60. FIG. 19 (A) is a view before the support 10 is peeled, and FIG. 19 (B) is a view after the support 10 is peeled.

In the peeling process S60, first, the holder 60 is fixed to the fixing table 3b arrange | positioned in the peeling unit 3 by the holder 60 by vacuum suction etc. Since the laminated body 50A is affixed to the holder 60, the laminated body 50A is held in the fixed stage 3b. After the holder 60 is fixed, as shown in FIG. 19 (A), the bottom surface 10b of the support 10 opposite to the reaction layer forming surface 110 is adsorbed by the adsorption device 3a. In this state, by moving the adsorption device 3 a upward, as shown in FIG. 19 (B), the support body 10 is lifted from the substrate 40 with the reaction layer 20 as a separation surface. As described above, the intensity of the altered layer 20a in the reaction layer 20 is reduced by the irradiation of the light L, or the adhesion force is reduced. The upward movement of the adsorption device 3a is easily destroyed, or the adhesion surface is easily To peel. Thereby, the support body 10 can be easily peeled from the substrate 40. By the peeling process S60, the support body 10 is peeled from the reaction layer 20 of the laminated body 50A.

After the peeling process S50 is performed, a transfer process is performed, that is, the substrate 40 from which the support body 10 is peeled is still held by the holder 60, and is transferred from the peeling unit 3 to the third washing by the transporting device 7 a of the transporting unit 7. NET UNIT 6.

(Liquid washing process)
After the substrate 40 is transferred to the third cleaning unit 6, the liquid cleaning process S70 is performed in the third cleaning unit 6. FIG. 20 illustrates an example of the third cleaning unit 6 and the liquid cleaning process S70. FIG. 20 (A) is a view showing a state where the substrate 40 is being cleaned with the liquid, and FIG. 20 (B) is a view after the liquid cleaning process S70 The substrate 40 is a schematic diagram.

As shown in FIG. 20 (A), in the liquid washing process S70, as in the liquid washing process S33 for the laminate 50 described above, the upper side of the ring 62 is supported at a predetermined height by the support portion 6b, and is lifted by The lifting device 6 a lifts the substrate 40 from below the film 61 to create a state in which the substrate 40 projects upward with respect to the ring 62. In addition, the state shown in FIG. 20 (A) may be created by pushing the ring 62 downward with the support portion 6b while holding the substrate 40 at a predetermined height. In the liquid cleaning process S70 and the third cleaning unit 6, whether the substrate 40 is lifted to the ring 62 is optional, and the substrate 40 may be processed without lifting the substrate 40.

Next, in a state where the substrate 40 is lifted, the cleaning liquid R5 is discharged from the cleaning liquid nozzle 6 c to the reaction layer 20. The cleaning liquid R5 is used for washing the deteriorated layer 20 a of the reaction layer 20 from the reaction layer 20. As the washing liquid R5, for example, water or the like can be used like the washing liquid R2 described above. The cleaning liquid R5 discharged from the cleaning liquid nozzle 6c flows through the reaction layer 20 and falls to the film 61 side. By this cleaning solution R5, as shown in FIG. 20 (B), the deteriorated layer 20a in the reaction layer 20 is washed away, and the undegraded portion of the reaction layer 20 is left on the substrate 40. After the liquid cleaning process S70, the substrate 40 is transferred from the third cleaning unit 6 to the second cleaning unit 5 by the transfer device 7a during the transfer process.

(Plasma cleaning project)
After the substrate 40 is transferred to the second cleaning unit 5, a plasma cleaning process S80 is performed in the second cleaning unit 5. The plasma washing process S80 is performed in the second washing unit 5. FIG. 21 illustrates another example of the second cleaning unit 5 and the plasma cleaning process S80. FIG. 21 (A) is a diagram showing a state where the substrate 40 is being cleaned by the plasma 5a, and FIG. 21 (B) is a plasma cleaning Schematic diagram of the substrate 40 after the clean process S80.

As shown in FIG. 21 (A), in the plasma cleaning process S80, in a state where the holder 60 is placed on the platform 5b, the space on the reaction layer 20 uses a plasma generator (not shown) to generate plasma. 5a is generated. The plasma 5a is, for example, an oxygen plasma. As a result of this plasma 5a, as shown in FIG. 21 (B), the undeteriorated portion of the reaction layer 20 remaining on the substrate 40 is processed and removed from the substrate 40.

FIG. 22 (A) is another schematic diagram of the substrate 40 after performing the liquid cleaning process S70 and the plasma cleaning process S80. As shown in FIG. 22 (A), after the plasma cleaning process S80 is performed, the powder 20b of the reaction layer 20 may remain on the substrate 40 slightly. In view of this, after the plasma cleaning process S80 is performed, the substrate 40 can also be transferred from the second cleaning unit 5 to the third cleaning unit 6 by the transfer device 7a during the transportation process, and then cleaned at the third time. The unit 6 performs a liquid washing process S90.

(Liquid washing process)
FIG. 22 (B) is a diagram showing a state where the substrate 40 shown in FIG. 22 (A) is being cleaned with a liquid. As shown in FIG. 22 (B), in the liquid washing process S90, like the liquid washing process S70 described above, the upper side of the ring 62 is supported at a predetermined height by the supporting portion 6b, and the film 61 is lifted by the lifting device 6a. The substrate 40 is lifted below to create a state where the substrate 40 projects upward with respect to the ring 62. In addition, the state shown in FIG. 22 (B) may be created by pushing the ring 62 downward with the support portion 6b while holding the substrate 40 at a predetermined height. In the liquid cleaning process S90 and the third cleaning unit 6, whether the substrate 40 is lifted to the ring 62 is optional, and the substrate 40 may be processed without lifting the substrate 40 with respect to the ring 62.

Next, in a state where the substrate 40 is lifted, the cleaning liquid R6 is discharged from the cleaning liquid nozzle 6 c to the adhesive layer 30. The cleaning liquid R5 is used for washing the powder 20 b remaining on the substrate 40 from the substrate 40. As the washing liquid R6, water or the like can be used like the washing liquid R5 described above. The cleaning liquid R6 discharged from the cleaning liquid nozzle 6c flows on the substrate 40 and falls to the film 61 side. With this cleaning solution R6, the powder 20b remaining on the substrate 40 is washed away. The substrate 40 is formed in this manner. The liquid washing process S90 is optional, and the liquid washing process S90 may not be performed.

As described above, according to the substrate processing apparatus 1 and the substrate processing method of this embodiment, the liquid cleaning processes S70 and S90 performed by the third cleaning unit 6 and the plasma cleaning performed by the second cleaning unit 5 are performed. Clean process S80 to reliably remove the reaction layer 20 or the metamorphic layer 20a (residue) remaining on the substrate 40, thereby reducing the influence on subsequent processing, and preventing the residue from scattering from the substrate 40 to pollute the surrounding environment .

<Arrangement of Units of the Substrate Processing Apparatus for Processing the Laminate 50A>
FIG. 23 is a schematic diagram showing an example of the arrangement of each unit of the substrate processing apparatus 1A. In FIG. 23, the directions in the figure are explained using the XYZ coordinate system as in FIG. When the laminated body 50A that does not include the bonding layer 30 is used, although the substrate processing apparatus 1 shown in FIG. 16 can be used, there is no bonding layer 30 in the laminated body 50A, so it is not necessary to remove the bonding layer 30.之 第一 washing unit 4. Therefore, in the case of processing the laminated body 50A, the substrate processing apparatus 1A shown in FIG. 23 can also be used. The substrate processing apparatus 1A shown in FIG. 23 processes a laminated body 50A that does not include the bonding layer 30. The substrate processing apparatus 1A includes the light irradiation unit 2, the peeling unit 3, the second cleaning unit 5, the third cleaning unit 6, and the transfer unit 7 described above. In addition, the substrate processing apparatus 1 includes a loading port 8 on which a container housing a plurality of laminated bodies 50 or substrates 40 is placed, and a loading port 9 for carrying in or temporarily storing the laminated bodies 50 or substrates 40.

The substrate processing apparatus 1A has a rectangular shape that is longer in one direction (Y direction) in a plan view. In the substrate processing apparatus 1A, a peeling unit 3, a light irradiation unit 2, and a second cleaning unit 5 are arranged on the + X side toward the + Y direction. In the substrate processing apparatus 1A, a third cleaning unit 6 is disposed on the -X side. The light irradiation unit 2 is sandwiched between the peeling unit 3 and the second cleaning unit 5 in a plan view.

In the substrate processing apparatus 1A, the loading ports 8 and 9 are the substrate processing apparatus 1 shown in FIG. 16, and description thereof is omitted. The transfer unit 7 includes a transfer device 7a that transfers the laminate 50A or the substrate 40, and a transfer path 7b that is a movement path of the transfer device 7a. The conveying device 7a can be moved between the units or between the loading ports 8 and 9 and the units by a rail (not shown) or the like provided on the conveying path 7b. The transfer device 7 a includes a robot arm (not shown) that can hold the laminated body 50A or the substrate 40. The conveyance path 7b is provided in the substrate processing apparatus 1A in the X direction on the -Y side, and is provided in the Y direction between the column of the + X side cells and the column of the -X side cells. The conveyance path 7b is formed in a T shape. The conveyance device 7a moves the conveyance path 7b to receive and receive the laminated body 50 or the substrate 40 between the units or between the loading ports 8 and 9 and the units.

According to the substrate processing apparatus 1A configured as described above, the laminated body 50A or the substrate 40 is efficiently transferred to each unit by the transfer unit 7, so that the above-mentioned light irradiation process S50, peeling process S60, and liquid can be efficiently performed. Each of the washing process S70, the plasma washing process S80, and the liquid washing process S90. In addition, in the substrate processing apparatus 1A, the area CON is an area for containing a control substrate or the like.

Although the embodiments and examples have been described above, the present invention is not limited to the above description, and various changes can be made without departing from the scope of the present invention. For example, the substrate 40 is cut for each electronic component 41, and such a cutting unit may be included in the substrate processing apparatuses 1 and 1A described above, and the cutting unit may be connected to and disposed on the substrate processing apparatuses 1 and 1A. .

R1, R2, R3, R4, R5, R6‧‧‧washing liquid

1. 1A‧‧‧ substrate processing equipment

2‧‧‧light irradiation unit

2a, 2b‧‧‧‧irradiation device

3‧‧‧ stripping unit

3a‧‧‧Adsorption device

4‧‧‧The first washing unit

5‧‧‧ 2nd washing unit

6‧‧‧The third washing unit

7‧‧‧ transport unit

7a‧‧‧ transfer device

8, 9‧‧‧ loading port

10‧‧‧ support

20‧‧‧ reaction layer

20a‧‧‧ Metamorphic layer

30‧‧‧ Adjacent layer

40‧‧‧ substrate

50, 50A‧‧‧Layer

60‧‧‧ holder

[Fig. 1] A functional block diagram showing an example of a substrate processing apparatus according to the first embodiment.

[Fig. 2] An example of a laminated body to be processed in a substrate processing apparatus is shown. (A) is a diagram of a laminated body including an adhesive layer, and (B) is a diagram of a laminated body not including an adhesive layer.

[Fig. 3] An example of a holder holding the laminated body is shown. (A) is a perspective view of the holder holding the laminated body, and (B) is a cross-sectional view taken along line A-A of (A).

[Fig. 4] A schematic flowchart of an example of a substrate processing method according to an embodiment.

[Fig. 5] An example of a light irradiation unit and a light irradiation process is shown, (A) is a diagram of a case where light is completely irradiated to a laminated body, and (B) is a diagram of a case where light is scanned on a laminated body.

[FIG. 6] An example of a peeling unit and a peeling process is shown, (A) is a figure before peeling a support body, and (B) is a figure after peeling a support body.

[Fig. 7] An example of the first cleaning unit and the liquid cleaning process is disclosed. (A) is a diagram showing a state where the substrate is being cleaned with liquid, and (B) is a schematic diagram of the substrate after the liquid cleaning process.

[Fig. 8] Continuing with Fig. 7, an example of a second cleaning unit and a plasma cleaning process is disclosed. (A) is a diagram of a state where a substrate is being cleaned by a plasma, and (B) is a plasma cleaning process. Schematic of the substrate.

[Fig. 9] An example of the third cleaning unit and the liquid cleaning process is disclosed. (A) is a diagram showing a state where the substrate is being cleaned with liquid, and (B) is a schematic diagram of the substrate after the liquid cleaning process.

[Fig. 10] Continuing with Fig. 9, another example of the second cleaning unit and the plasma cleaning process is disclosed. (A) is a diagram of a state where the substrate is being cleaned by a plasma, and (B) is a plasma cleaning process. Schematic of the rear substrate.

[Fig. 11] Continuing with Fig. 10, another example of the first cleaning unit and the liquid cleaning process is disclosed. (A) is a diagram of a state where the substrate is being cleaned with liquid, and (B) is a substrate after the liquid cleaning process. schematic diagram.

[Figure 12] Another example of the second cleaning unit and the plasma cleaning process is disclosed. (A) is a diagram of a state where the substrate is being cleaned by a plasma, and (B) is a schematic diagram of the substrate after the plasma cleaning process. .

[Fig. 13] Continuing with Fig. 12, another example of the first cleaning unit and the liquid cleaning process is disclosed. (A) is a diagram of a state where the substrate is being cleaned with liquid, and (B) is a substrate after the liquid cleaning process. schematic diagram.

[Figure 14] Another example of the substrate after the liquid cleaning process and the plasma cleaning process.

[Fig. 15] Continuing with Fig. 14, another example of the second cleaning unit and the plasma cleaning process is disclosed. (A) is a diagram of a state where the substrate is being cleaned by a plasma, and (B) is a plasma cleaning process. Schematic of the rear substrate.

16 is a schematic diagram showing an example of an arrangement of each unit of the substrate processing apparatus.

[Figure 17] A schematic flowchart of another example of a substrate processing method according to the embodiment.

[Fig. 18] Another example of the light irradiation unit and the light irradiation process is shown, (A) is a diagram of a case where light is irradiated to the entire surface of the layered body, and (B) is a diagram of a case where the layered body is scanned with light.

[FIG. 19] Another example of a peeling unit and a peeling process is shown, (A) is a figure before peeling a support body, and (B) is a figure after peeling a support body.

[Fig. 20] Another example of the third cleaning unit and the liquid cleaning process is disclosed. (A) is a diagram showing a state where the substrate is being cleaned with liquid, and (B) is a schematic diagram of the substrate after the liquid cleaning process.

[Fig. 21] Continuing with Fig. 20, another example of the second cleaning unit and the plasma cleaning process is disclosed. (A) is a diagram of a state where a substrate is being cleaned by a plasma, and (B) is a plasma cleaning process. Schematic of the rear substrate.

[FIG. 22] (A) is another schematic diagram of the substrate after the liquid cleaning process and the plasma cleaning process, and (B) is a continuation of (A), and the state of the substrate being cleaned by the liquid.

[Fig. 23] A schematic diagram of another example of the arrangement of each unit of the substrate processing apparatus.

Claims (15)

A substrate processing apparatus including: A light irradiation unit that irradiates light to a laminated body including a support, a substrate, and a reaction layer interposed between the support and the substrate, thereby deteriorating the reaction layer; and A peeling unit to peel the substrate from the support; and A first cleaning unit that cleans the substrate peeled from the support with a liquid; and The second cleaning unit processes the substrate peeled from the support by a plasma treatment. The substrate processing apparatus according to item 1 of the scope of patent application, wherein the laminated body further has an adhesive layer between the reaction layer and the substrate, The first cleaning unit removes the adhesive layer attached to the substrate peeled from the support with a liquid. The substrate processing apparatus according to claim 1 or claim 2, wherein the liquid used in the first cleaning unit includes a hydrocarbon-based organic solvent, a nitrogen-containing organic solvent, and an ether-based solvent 1 or more of ester solvents. The substrate processing apparatus according to any one of claims 1 to 3, wherein the second cleaning unit processes the substrate by an oxygen plasma. The substrate processing apparatus according to any one of claims 1 to 4, wherein the first cleaning unit, the second cleaning unit, and the peeling unit are disposed on a plurality of walls. Plate in the same space. The substrate processing apparatus according to item 5 of the scope of application for a patent, wherein the space includes a transporting apparatus for transporting the substrate peeled from the support or the support. A substrate processing method includes: Light irradiation project, irradiating light to a laminate including a support, a substrate, and a reaction layer interposed between the support and the substrate, thereby deteriorating the reaction layer; and Peeling process to peel the substrate from the support; and In the liquid cleaning process, the substrates peeled from the support are cleaned by liquid; and In the plasma cleaning process, the substrate peeled from the support is treated with a plasma. The substrate processing method according to item 7 of the scope of the patent application, wherein the liquid used in the liquid cleaning process includes a hydrocarbon-based organic solvent, a nitrogen-containing organic solvent, an ether-based solvent, and an ester-based solvent. Choose one or more. The substrate processing method according to item 7 or item 8 of the scope of the patent application, wherein in the foregoing plasma cleaning process, the substrate is processed by an oxygen plasma. The substrate processing method according to any one of claims 7 to 9, in which the substrate is peeled from the support, and the plasma cleaning is performed after the liquid cleaning process is performed. Net works. The substrate processing method according to any one of claims 7 to 9, in which the substrate is peeled from the support, and the liquid washing is performed after the plasma cleaning process is performed. Net works. The substrate processing method according to item 11 of the scope of the patent application, wherein the liquid cleaning process is different from the liquid cleaning process performed after the plasma cleaning process is performed, and more than 1 liquid is performed before the plasma cleaning process. Washing works. The substrate processing method according to item 12 of the scope of the patent application, wherein the liquid used in the liquid cleaning process performed before the plasma cleaning process includes a hydrocarbon-based organic solvent and a nitrogen-containing organic solvent. One or more solvents are selected from the group consisting of a solvent, an ether solvent, and an ester solvent. The substrate processing method according to any one of claims 7 to 13 in the scope of the patent application, wherein the laminated body further has an adhesive layer between the reaction layer and the substrate. The substrate processing method according to any one of claims 7 to 14 in the scope of the patent application, wherein each of the above-mentioned liquid cleaning process, the above-mentioned plasma cleaning process, and the above-mentioned peeling process includes transportation. A process for transferring the support or the substrate peeled from the support.