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TW201812955A - Support separation device and support separation method - Google Patents

Support separation device and support separation method Download PDF

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Publication number
TW201812955A
TW201812955A TW106123951A TW106123951A TW201812955A TW 201812955 A TW201812955 A TW 201812955A TW 106123951 A TW106123951 A TW 106123951A TW 106123951 A TW106123951 A TW 106123951A TW 201812955 A TW201812955 A TW 201812955A
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support
gap
substrate
holding
support plate
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TW106123951A
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Chinese (zh)
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TWI707421B (en
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岩田泰昌
福島偉仁
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日商東京應化工業股份有限公司
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    • H10P72/0428
    • H10P54/00
    • H10P72/70
    • H10P72/7612

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

[課題] 本發明係在由層合體分離支持體時,不使基板及支持體破損而在短時間順利地分離。   [解決手段] 有關本發明之一形態的支持體分離裝置(10)係藉由夾具(23)而把持支持板(2)之倒角部位(2a)而形成間隙(7),在將間隙(7)以吸附墊(22)維持的狀態,由與夾具(23)成為一體的氣體噴出部(24)噴出氣體。[Problem] In the present invention, when the support is separated from the laminate, the substrate and the support are smoothly separated in a short time without damaging the substrate and the support. [Solution] A support separation device (10) according to one aspect of the present invention is formed by holding a chamfered portion (2a) of a support plate (2) by a clamp (23) to form a gap (7). 7) In a state maintained by the adsorption pad (22), a gas is ejected from a gas ejection unit (24) integrated with the jig (23).

Description

支持體分離裝置以及支持體分離方法Support body separation device and support body separation method

[0001] 本發明係關於支持體分離裝置以及支持體分離方法。[0001] The present invention relates to a support separation device and a support separation method.

[0002] 近年來,一直要求IC卡、攜帶式電話等之電子機器之薄型化、小型化、輕量化等。為了滿足此等之要求,關於安裝的半導體晶片亦必需使用薄型之半導體晶片。因此,成為半導體晶片之基的晶圓基板之厚度(膜厚)係在現狀為125μm~150μm,但於次世代之晶片用係必需作成25μm~50μm。因而,為了得到上述膜厚之晶圓基板係晶圓基板之薄板化步驟為必要不可欠缺。   [0003] 晶圓基板係因為薄板化而強度下降,所以為了防止薄板化的晶圓基板之破損,故在製造製程中係於晶圓基板黏合支持板的狀態進行自動搬送,同時於晶圓基板上安裝電路等之結構物。然後,於製造製程後,分離晶圓基板與支持板。因此,至今使用有由晶圓剝離支持體的各式各樣的方法。   [0004] 於專利文獻1係記載有一種剝離裝置,其係具有由聚合基板之側方插入被處理基板與支持基板之接合面而插入切口,前端為細尖的切入機構、與由聚合基板之側方對被處理基板和支持基板之接合面供給流體的流體供給機構。 [先前技術文獻] [專利文獻]   [0005]   [專利文獻1] 日本特開2013-219328號公報(2013年10月24日公開)[0002] In recent years, thinning, miniaturization, and weight reduction of electronic devices such as IC cards and mobile phones have been required. In order to satisfy these requirements, a thin semiconductor wafer must also be used for the mounted semiconductor wafer. Therefore, the thickness (film thickness) of a wafer substrate that is the basis of a semiconductor wafer is currently 125 μm to 150 μm. However, the next-generation wafer system must be 25 μm to 50 μm. Therefore, in order to obtain the wafer substrate having the above-mentioned film thickness, a thinning step of the wafer substrate is necessary. [0003] Since the wafer substrate is thinned and its strength is reduced, in order to prevent the thinned wafer substrate from being damaged, the wafer substrate is automatically transported in a state where the wafer substrate is bonded to the support plate during the manufacturing process, and at the same time, the wafer substrate Structures such as mounting circuits. Then, after the manufacturing process, the wafer substrate and the support plate are separated. Therefore, various methods have heretofore been used to peel the support from the wafer. [0004] Patent Document 1 describes a peeling device that has a cutout mechanism inserted into a joint surface of a processing substrate and a support substrate from a side of a polymer substrate, a cutting mechanism having a fine tip, and A fluid supply mechanism that laterally supplies fluid to a bonding surface of a substrate to be processed and a supporting substrate. [Prior Art Document] [Patent Document] [0005] [Patent Document 1] Japanese Patent Laid-Open No. 2013-219328 (published on October 24, 2013)

[發明所欲解決之課題]   [0006] 然而,如專利文獻1所記載之剝離裝置之方式,藉由從流體供給機構供給的溶劑而溶解接著層,同時藉由切入機構而由層合體分離支持體的方法係有為了分離基板所以需要長時間的問題。   [0007] 又,在專利文獻1所記載之剝離裝置係藉由切入機構而由層合體分離支持體時,有支持體破損的疑慮。   [0008] 本申請發明係鑑於上述之課題所為者,該目的係提供一種支持體分離裝置及該關連技術,其係在由層合體分離支持體時,可不使基板及支持體破損而在短時間順利地分離。 [用以解決課題之手段]   [0009] 為了解決上述之課題,關於本發明的支持體分離裝置係自介由接著層而貼附基板與支持上述基板的支持體而成的層合體,分離上述支持體的支持體分離裝置,其特徵為具備由基板側固定上述層合體的載置台、保持上述支持體的保持部、使上述保持部相對於上述載置台而昇降的昇降部,上述保持部係具備至少一個之把持部,該把持部係把持上述支持體之外周端部,於上述基板與上述支持體之間形成間隙、一種吸附部,該吸附部係藉由以在上述支持體的上述間隙所形成的面之背面吸附保持上述支持體而舉升,維持上述間隙,上述把持部係具備一種噴出部,該噴出部為從藉由上述吸附部而維持的上述間隙朝向上述層合體之內部,噴出流體。   [0010] 又,關於本發明的支持體分離方法係自介由接著層而貼附基板與支持上述基板的支持體而成的層合體,分離上述支持體的支持體分離方法,其特徵為包含一種間隙形成步驟,其係固定上述基板,藉由至少一個之把持部而把持上述支持體之外周端部,於上述基板與上述支持體之間形成間隙、一種間隙維持步驟,其係藉由從在上述間隙所形成的面之背面吸附保持上述支持體而舉升,維持上述間隙、一種分離步驟,其係上述間隙維持步驟後,藉由從上述間隙朝向上述層合體之內部,由上述把持部所具備的噴出部噴出流體,從上述層合體分離上述支持體。 [發明之效果]   [0011] 藉由本發明,則顯現可提供一種支持體分離裝置及該關連技術的效果,其係在由層合體分離支持體時,可不使基板及支持體破損而在短時間順利地分離。 【圖示簡單說明】 [0012]   [第1圖] 說明有關本發明之一實施形態的支持體分離裝置之概略之構成的圖。   [第2圖] 關於具有藉由第1圖所示的支持體分離裝置而分離的支持體的層合體之分離層,表示光照射後之狀態之俯視圖。   [第3圖] 表示第1圖所示的支持體分離層所具備,把持支持體的夾具與相鄰夾具而配設的氣體噴出部之構成的圖。   [第4圖] 表示第1圖所示的支持體分離層所具備的氣體噴出部之構成的圖。   [第5圖] 說明第1圖所示的支持體分離層之支持體分離動作的圖。   [第6圖] 表示在第1圖所示的支持體分離層之支持體分離動作,由氣體噴出部噴出氣體的狀態的圖。   [第7圖] 說明本發明之其他形態的圖。   [第8圖] 說明本發明之其他形態的圖。[Problems to be Solved by the Invention] [0006] However, in the method of the peeling device described in Patent Document 1, the adhesive layer is dissolved by the solvent supplied from the fluid supply mechanism, and the laminate is separated and supported by the cutting mechanism. The bulk method has a problem that it takes a long time to separate the substrate. [0007] In addition, when the peeling device described in Patent Document 1 uses a cutting mechanism to separate the support from the laminate, there is a concern that the support is damaged. [0008] The invention of the present application is made in view of the above-mentioned problems, and the purpose is to provide a support separation device and the related technology, which can separate the support and the substrate in a short time when the support is separated from the laminated body. Smooth separation. [Means for Solving the Problems] [0009] In order to solve the above-mentioned problems, the support separation device of the present invention is a laminated body formed by attaching a substrate and a support supporting the substrate through an adhesive layer, and separating the above. A support separating device for a support is characterized in that it includes a mounting table on which the laminate is fixed on a substrate side, a holding section holding the support, a lifting section for raising and lowering the holding section with respect to the mounting table, and the holding section is It is provided with at least one gripping portion that grips the outer peripheral end portion of the support, forms a gap between the substrate and the support, and an adsorption portion that is configured to use the gap between the support and the support. The back surface of the formed surface adsorbs and holds the support and lifts up to maintain the gap. The holding portion is provided with a ejection portion that faces from the gap maintained by the adsorption portion toward the inside of the laminate. Spray fluid. [0010] A support separation method according to the present invention is a method for separating a support from a laminated body formed by attaching a substrate and a support supporting the substrate via an adhesive layer, and the method includes: A gap forming step is to fix the substrate, hold the outer peripheral end portion of the support by at least one holding portion, form a gap between the substrate and the support, and a gap maintaining step, which is performed by The support is lifted on the back surface of the surface formed by the gap, and the gap is maintained. A separation step is performed after the gap maintaining step, from the gap to the inside of the laminated body, by the holding portion. The ejection part provided ejects a fluid, and separates the said support body from the said laminated body. [Effects of the invention] [0011] With the present invention, it is possible to provide a support separation device and the effect of the related technology. When the support is separated from the laminate, the substrate and the support can be broken in a short time. Smooth separation. [Brief Description of the Drawings] [0012] FIG. 1 is a diagram illustrating a schematic configuration of a support separation device according to an embodiment of the present invention.第 [Fig. 2] A plan view showing a state of a laminated body having a support separated by a support separating device shown in Fig. 1 after irradiation with light. [Fig. 3] A diagram showing a configuration of a gas ejection section provided in the support separation layer shown in Fig. 1 and configured to hold a jig of a support and an adjacent jig. [Fig. 4] A diagram showing a configuration of a gas ejection section provided in the support separation layer shown in Fig. 1. [Fig. [Fig. 5] A diagram illustrating a support separation operation of the support separation layer shown in Fig. 1. [Fig. 6] A diagram showing a state in which a gas is ejected from a gas ejection section in a support separation operation of the support separation layer shown in Fig. 1. [FIG. 7] A diagram illustrating another aspect of the present invention. [FIG. 8] A diagram illustrating another aspect of the present invention.

[0013] [實施形態1]   關於有關本發明的支持體分離裝置及支持體分離方法之一形態,於以下進行說明。   [0014] <1.支持體分離裝置之構成>   第1圖係關於本實施形態1之支持體分離裝置之特取部分之構成而表示的圖,第1(a)圖為部分俯視圖,第1(b)圖係在第1(a)圖的A-A’線箭號剖面。尚,於第1(a)圖及第1(b)圖亦一起表示將XY平面設為水平面的XYZ座標系。   [0015] 本實施形態1之支持體分離裝置10係與先前技術相同,在已安裝電路等之結構物的晶圓基板為與支持板一起構成層合體的狀態,用以由該層合體剝離支持板而使用的裝置。然而,不限於已層合晶圓基板的層合體,可關於層合板體在最表層的所有型式之層合體而用以剝離該板體而使用。尚,在以下係將晶圓基板僅記載為基板。   [0016] 在此,細節係後述,但藉由本實施形態1之支持體分離裝置10而被分離支持板的層合體100係如第1(b)圖所示之方式,基板1與光透過性之支持板2(支持體)介由接著層3而貼附,更進一步,於接著層3與支持板2之間係設置藉由照射光而變質的分離層4的層合體。尚,在第1(b)圖,層合體100係該基板1側被貼著於具備切割框6的切割膠帶5。   [0017] 將如此的層合體100設為對象的本實施形態1之支持體分離裝置10係如第1(b)圖所示之方式,具備平台50(載置台)、光照射部40、昇降部30、保持部20。   [0018] (1.1)平台50   平台50為載置層合體100的台。於平台50之上面係設置多孔性部分的多孔部51,於多孔部51係連通無圖示的減壓部。透過此,載置於平台50上的層合體100係在該基板1側之平面藉由多孔部51而吸附固定。   [0019] (1.2)光照射部40   光照射部40係對於在層合體100的分離層4,介由光透過性之支持板2而照射光。   [0020] 具體而言,光照射部40係一邊掃描層合體100之上,同時介由支持板2而對構成於在俯視的形狀為圓形的層合體100的分離層4之周緣部分(區域4a)照射光而使該部分變質。   [0021] 在此,第2圖係表示在俯視為圓形的分離層4、透過光照射部40的光照射而變質的區域4a的圖。如第2圖所示,區域4a之寬W1係由分離層4之外周端部朝向內側,0.5mm以上、8mm以下之範圍內為理想,1.5mm以上、8mm以下之範圍內為較理想。如寬W1為6mm以上,則於層合在區域4a的分離層4的基板1與支持板2之間,形成間隙,藉由從該間隙朝向層合體100之內部而噴射流體,可順利地由層合體100分離支持板2。又,如寬W1為2mm以下,則因為可變小在分離層4照射光的區域4a之面積,所以可變小對於基板1照射光的面積。   [0022] 尚,在本說明書中,所謂分離層為「變質」係意味著分離層受到稍微的外力而可被破壞的狀態,或作為與分離層相接的層之接著力為低下的狀態的現象。作為吸收光而產生的分離層之變質之結果,分離層係失去接受光之照射前之強度或接著性。總之,藉由吸收光,分離層變脆。所謂分離層之變質係可以是分離層產生因吸收的光之能量所致的分解、空間排列之變化或官能基之解離等。分離層之變質係作為吸收光之結果而產生。   [0023] 因而,例如只以舉升支持板而分離層被破壞之方式使其變質,可容易地分離支持板與基板。更具體而言,例如藉由支持體分離裝置等,將在層合體的基板及支持板之一方固定於載置台,以藉由具備吸附手段的吸附墊(保持手段)等而保持他方而舉升,分離支持板與基板,或是將支持板之周緣部分端部之倒角部位,藉由具備夾具(爪部)等的分離板而把持而施加力量,分離基板與支持板即可。另外,例如藉由具備供給用以剝離接著劑之剝離液的剝離手段的支持體分離裝置,亦可由在層合體的基板剝離支持板。藉由該剝離手段而對在層合體的接著層之周端部之至少一部分供給剝離液,藉由使在層合體的接著層溶解,可從該接著層已溶解處於分離層以力量集中之方式,對基板與支持板施加力量。因此,可合適地分離基板與支持板。   [0024] 尚,施加於層合體的力係藉由層合體之大小等而適宜地調整即可,無限定,例如若為面積為40000~70000mm2 左右之層合體,則藉由施加0.1~5kgf左右之力,可合適地分離基板與支持板。   [0025] 若藉由光照射部40之光照射而分離層4之區域4a變質,則透過將在支持板2之周緣部分端部的倒角部位2a(第3(b)圖)藉由夾具23把持,可於倒角部位2a與區域4a之間形成間隙。較理想為藉由將倒角部位2a(第3(b)圖)藉由夾具23把持而舉升,於倒角部位2a與區域4a之間形成間隙。然後,詳細係後述,但可以此間隙作為契機,分離基板1與支持板2。   [0026] 光照射部40照射於分離層4的光係按照分離層4吸收的波長而適宜地選擇即可。作為發射照射於分離層4的光的雷射之例係可舉出YAG雷射、紅寶石雷射、玻璃雷射、YVO4 雷射、LD雷射、光纖雷射等之固體雷射,色素雷射等之液體雷射,CO2 雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光、或是非雷射光等。發射照射於分離層4的光的雷射係可按照構成分離層4的材料而適宜地選擇,選擇可照射使構成分離層4的材料變質的波長之光的雷射即可。   [0027] 在此,於基板1,以相對於在區域4a的分離層4之方式配置的區域係設定作為未形成積體電路等之結構物的非電路形成區域。又,於基板1,以相對於區域4a之方式配置的區域以外之區域係形成積體電路等之結構物(電路形成區域)。因而,以僅使在區域4a的分離層4變質,可避免對以相對於區域4a之方式配置的區域以外之區域,亦即,在基板1的電路形成區域照射光。因而,可一面使在區域4a的分離層4變質,同時避免對於在基板1的電路形成區域由光照射部40照射光,因該光而在基板1的電路形成區域受到損傷之情事。   [0028] (1.3)昇降部30   昇降部30係如第1(b)圖所示,連接固定於在保持部20之俯視的形狀為圓形的平板部21之上面側之中心部,沿著第1(a)圖及第1(b)圖所示的Z軸而使保持部20昇降。   [0029] 尚,在本實施形態1係昇降部30被連接固定在平板部21,但本發明係不限定於此之態樣,例如於昇降部30亦可設置浮動接頭及止動件。例如,浮動接頭亦可配設於在保持部20之俯視的形狀為圓形的平板部21之上面側之中心部。在此情況,平板部21係介由浮動接頭而被連接於昇降部30,可旋動,且在平板部21的吸附墊22所設置的面,相對於被固定於平台50的層合體100之平面而言以傾斜之方式而可動。然後,止動件係設置作為以平板部21不會產生超過必要的傾斜之方式進行的卡止手段。若平板部21打算進行超過必要的傾斜,則止動件接觸於平板部21之上面部而平板部21不進行該以上的傾斜。   藉由此等浮動接頭與止動件,亦可調整平板部21之傾斜,可藉由吸附墊22而以吸附保持支持板2之方式配置。   [0030] (1.4)保持部20   保持部20係具有平板部21、吸附墊22(吸附部)、夾具23(把持部)、氣體噴出部24(噴出部)、滑動驅動部25(驅動部)、位準塊26(抵接部)。   [0031] (1.4.1)平板部21   平板部21係連接於昇降部30。平板部21係相對配置於平台50的在俯視上大略圓形之結構體。尚,為了說明方便,於第1(a)圖係表示平板部21之中心點C。   [0032] (1.4.2)吸附墊22   吸附墊22係配設於在平板部21的與平台50之相對側之面。較具體而言,吸附墊22係如第1(a)圖所示,挾持在俯視的形狀為圓形的平板部21之中心點C而相對的2處所、沿著相對於連接此等的假想線而在中心點C直交的線,在挾持中心點C而相對的2處所之合計4處所,各自設置於相較於平板部21之外周端部更內側(靠近中心點C)。   [0033] 吸附墊22係正好可抵接於被載置在平台50的層合體100之支持板2側之表面(亦有記載為層合體100之上面)之區域4a之相反側之區域。   [0034] 吸附墊22係可將支持板2藉由真空吸附而保持,例如可舉出波紋管墊等。吸附墊22係藉由在上述之位置於抵接支持板2的狀態進行真空吸附,例如吸附墊22為藉由昇降部30而沿著Z軸從離開平台50的方向移動,則可舉升支持板2。   [0035] (1.4.3)夾具23   夾具23係成為在各吸附墊22之附近,介由滑動驅動部25而與平板部21連接,可把持(保持)已載置於平台50的層合體100的構成。   [0036] 較具體而言,夾具23係如第1(a)圖所示,在挾持在俯視的形狀為圓形的平板部21之中心點C而相對的2處所、與沿著相對於連接該2處所的假想線而在中心點C直交的線,在挾持中心點C而相對的2處所之合計4處所,各自設置於相較於平板部21之外周端部更外側(離開中心點C側)。   [0037] 在此,於第1(a)圖係表示沿著相當於前述之假想線的X軸方向的線、沿著Y軸方向的線,在同一處所,一個吸附墊22、一個夾具23係位於同一線上。然後,4處所之夾具23係因為沿著平板部21之外周而等間隔地配設,所以在把持(保持)已載置於平台50的層合體100時可均等地施加力於層合體100。此係特別是於層合體100之支持板2為薄層(例如0.4mm左右)之玻璃層的情況,有助於不使支持板2破損而分離。   [0038] 夾具23係在第1(b)圖所示的剖面圖,挾持平板部21而在兩側。各夾具23係上端部連接於設置在平板部21之上面的滑動驅動部25,下端部係位於較平板部21之下面(吸附墊22配設面)更下方。尚,於滑動驅動部25係具備調整各夾具23之高度的機構,可沿著Z軸方向而調整各夾具23之位置。如第1(b)圖所示,在平台50上之層合體100已載置的狀態,若保持部20降低,則成為夾具23之下端部為位於層合體100之外周區域附近。尚,第1(b)圖係在說明之方便上,光照射部40為位於平台50上之層合體100與保持部20之間,但在保持部20為保持層合體100時係光照射部40為位於離開此位置的位置上。   [0039] 用以形成夾具23之材料係按照應把持支持板2之材質而適宜地選擇即可。因而,在用以形成夾具23之材料係可使用不銹鋼或鋁等之金屬及工程塑膠等。又,在支持板2之材質為玻璃的情況,為工程塑膠,使用芳香族聚醚酮而形成為較理想,在芳香族聚醚酮之中,具有芳香族基的聚醚醚酮(PEEK)、具有芳香族基的聚醚酮酮(PEKK)及具有芳香族基的聚醚醚酮酮(PEEKK)為理想,PEEK為最理想。由此,在藉由夾具23而把持由玻璃所構成的支持板2之外周端部時,可防止該支持板2破損。   [0040] 以下,使用第3圖,詳述關於夾具23。第3(a)圖~第3(c)圖係在第1(b)圖附有虛線之圓圈的處所之放大剖面圖。第3(a)圖係夾具23之剖面圖,第3(b)圖係說明在夾具23的傾斜面23b抵接於在層合體100的支持板2之倒角部位2a的狀態的圖,第3(c)圖係表示在第3(b)圖的B-B’線箭號剖面,傾斜面23b卡止在層合體100的支持板2之外周端部而捕捉前之狀態的圖。   [0041] 如第3(a)圖所示,夾具23係具有對立面23a及傾斜面23b(卡止面)。   [0042] 對立面23a係對立於支持板2之外周端部。在此,對立面23a係相對於在固定於平台50的層合體100的支持板2之平面部而言為垂直的面,具有與支持板2之外周端部所具有弧為相同大小的弧,或是,如畫出相較於外周端部具有的弧而言更大的弧之方式而彎曲的面。   [0043] 傾斜面23b係在夾具23之下端部而沿著對立面23a之下端邊(底邊)而設置,朝向平板部21之中心點C而構成的面。亦即,傾斜面23b係相對於YZ平面而傾斜。換言之,在第1(b)圖挾持平板部21而位於兩側的夾具23之傾斜面23b相互間係隨著朝向下方,傾斜於變得彼此之距離變近的方向。由此,傾斜面23b係在支持板2之外周端部,抵接於位於相對於平板部21的面之背面側的倒角部位2a,可卡止倒角部位2a。   [0044] 較具體而言,傾斜面23b係相對於XZ平面而言,具有30˚以上、未達90˚之範圍內之傾斜。由此,對於支持板2之倒角部位2a,可防止由傾斜面23b施加過度的力。又,在配設於平板部21之下的位準塊26之下面抵接支持板2之上面的狀態,傾斜面23b之傾斜係以相對於支持板2之倒角部位2a之傾斜而言成為平行之方式而設置,因為在抵接時不使過度的力集中於倒角部位2a之端部所以最理想。   [0045] 又,傾斜面23b係沿著複數之夾具23之對立面23a之下端邊而設置。複數之夾具23係在配設於平板部21之下的位準塊26之下面抵接支持板2之上面的狀態,包圍支持板2之外周端部,各自被設置於複數之夾具23的傾斜面23b係藉由滑動驅動部25,以同時同速度,接近支持板2之外周端部。因此,可藉由此等傾斜面23b,以在層合體100的支持板2之中心點與平板部21之中心點C重疊之方式,一邊誘導該層合體100,同時卡止支持板2之外周端部而把持。因而,支持體分離裝置10係藉由以包圍平板部21之方式等間隔地配置的複數之夾具23之傾斜面23b,可以接近略點接觸的狀態把持支持板2之外周端部。因此,可由複數之夾具23之傾斜面23b均等地施加用以把持支持板2之力,在平板部21已舉升時,可合適地防止抵接於複數之夾具23之傾斜面23b的支持板2之外周端部由傾斜面23b脫離。   [0046] 在此,於各夾具23係設置二個傾斜面23b,此等係如第3(c)圖所示,沿著對立面23a而併排配設。各個併排配設的傾斜面23b係可將寬L設為5~10mm左右。尚,接近在各傾斜面23b的支持板2的端邊係畫出與對立面23a平行的弧。   [0047] 然後,併排配設的傾斜面23b與傾斜面23b係分離,該分離部分為構成作為由氣體噴出部24噴出氣體的噴出口27(開口部)。具體而言,於夾具23係在該下端部(底部),形成由內側(平板部21側)至相反側延設的溝,在該溝的平板部21側之端為相當於上述之分離部分。溝之相反側之端,亦即,於所謂在夾具23的內側(平板部21側)係相反側為配設氣體噴出部24,該噴嘴端為要供給氣體於溝而連通。   [0048] 如此,藉由在各夾具23而將噴出口27設置於傾斜面23b與傾斜面23b之間,可將由噴出口27噴出的氣體有效地噴吹至藉由傾斜面23b抵接於倒角部位2a而舉升的支持板2之外周端部之下面。尚,亦可將設置於各夾具23的二個傾斜面23b用作一個傾斜面,在此情況,噴出口27係換言之亦可設於其一之卡止面內。   [0049] (1.4.4)氣體噴出部24   氣體噴出部24係一體性地構成各夾具23。具體而言,如第1(a)圖所示,挾持在俯視的形狀為圓形的平板部21之中心點C而相對的2處所、沿著相對於連接該等的假想線而在中心點C直交的線,在挾持中心點C而相對的2處所之合計4處所,各自設置於相較於夾具23更外側(離開中心點C側)。亦即,關於沿著相當於第1(a)圖已圖示的前述之假想線的X軸方向的線、沿著Y軸方向的線,在同一處所,一個吸附墊22、一個夾具23、一個氣體噴出部24係在同一線上,沿著由中心點C離開的方向以此順序配置。   [0050] 氣體噴出部24係藉由氣體噴出噴嘴而構成,一方之端部係配設於夾具23之下端部,另一方之端部係連接於無圖示的氣體供給裝置。   [0051] 氣體噴出部24係噴出的氣體之噴出方向朝向斜下。具體而言,如第4圖所示,噴出的氣體之噴出方向為相對於分離層4之平面部(XY平面)而言以具有0~45˚之傾斜角(第4圖中之T˚)之方式配設氣體噴出噴嘴。具有此傾斜角而被噴出的氣體係在支持板2之外周端部為透過傾斜面23b而被把持而形成的間隙,噴吹於分離層4之支持板2側之平面。由此,變得容易將支持板2由分離層4分離。   [0052] 沿著平板部21之外周端部而等間隔地配設的氣體噴出部24係可各自獨立而控制噴出。亦即,可不使某氣體噴出部24噴出氣體,僅由特定之氣體噴出部24噴出氣體。尚,作為噴吹於分離層4之支持板2側之平面的氣體之噴出量係可以0.3~0.5MPa,設為100~300L/分。   [0053] 由氣體噴出部24噴出的氣體係不對支持板2及分離層4帶來影響,對支持板2之分離不產生障礙的種類之氣體即可,例如可舉出由空氣、乾空氣、氮及氬所構成的群選擇至少一個。   [0054] 如第3(b)圖所示,傾斜面23b之下端及氣體噴出部24之下端係與在支持板2的相對於基板1的側之面,配置於同一平面上。藉由此,可防止傾斜面23b及氣體噴出部24之下端鉤掛於基板1及接著層3等。因而,使傾斜面23b僅抵接於支持板2,可藉由夾具23而順利地把持支持板2。   [0055] 尚,氣體噴出部24係無圖示,但亦可成為如上述般的與夾具23一起沿著Z軸方向而可上下移動的移動的機構。由此,從氣體噴出部24,可合適地調整朝向層合體100之內部而噴出氣體的位置。   [0056] (1.4.5)滑動驅動部25   滑動驅動部25係配設於在平板部21之上面的各夾具23之附近。各個滑動驅動部25係使位於附近的夾具23,沿著XY平面方向,以朝向平板部21之外周端部而接近或遠離之方式滑動移動(第3(b)及(c)圖)。又,滑動驅動部25係以同時相同速度,朝向支持板2之外周端部而使各個夾具23滑動移動。由此,可藉由夾具23而包圍、把持支持板2之外周端部。   [0057] 作為滑動驅動部25係可採用以氣壓缸所致的滑動機構。於滑動驅動部25係配設無圖示的調整器,藉由調整器調節氣壓缸之驅動壓,可改變以夾具23所致的支持板2之保持力。   [0058] 又,如上述般地,滑動驅動部25係具有可使夾具23及氣體噴出部24沿著Z軸方向而上下地移動的移動的機構。   [0059] (1.4.6)位準塊26   位準塊26係配設在相較於在平板部21的下面(平台50相對側之面)的各吸附墊22更內側(靠近中心點C),具有朝向下方而突出的結構。如後述,於位準塊26之突出端部(下端)係設有抵接於支持板2之上面(平面部)的抵接面26a,可防止在分離支持板2時被吸附於吸附墊22的支持板2為不合適地歪斜。因此,位準塊26之Z方向之長度(突出長)係相較於吸附墊22之Z方向之長度而言被稍短地構成。又,位準塊26之突出端部(下端)與夾具23之下端部之高度之差係以按照分離的支持板2之厚度而事先成為特定之方式設計,但因為具備高度調整機構,所以可調整高度。   [0060] 用以形成位準塊26之材料係按照接觸的支持板2之材質而適宜地選擇即可,例如可使用樹脂(工程塑膠等)。位準塊26為工程塑膠,使用芳香族聚醚酮而形成為較理想,在芳香族聚醚酮之中,具有芳香族基的聚醚醚酮(PEEK)、具有芳香族基的聚醚酮酮(PEKK)及具有芳香族基的聚醚醚酮酮(PEEKK)為理想,PEEK為最理想。由此,例如,在與由玻璃所構成的支持板2之上面接觸時,可防止該支持板2破損。又,可將位準塊26輕量化,可降低懸掛於昇降部30的負荷。   [0061] (1.5)其他構成   於本實施形態1之支持體分離裝置10係具備上述的各構成以外的構成。例如,具備檢測滑動驅動部25所移動的夾具23之各自之位置的位置感測器(不圖示)。   [0062] 位置感測器係藉由磁感測器而構成,具有固定於夾具23的磁鐵、檢測與夾具23之滑動移動一起移動的該磁鐵之變位的二個感測頭而構成。例如,二個感測頭係將各自之位置設為基準,將二個感測頭之間之距離,例如以0~100之值定標。例如,若將二個感測頭之間之距離設定為數mm左右,則可將夾具23之位置以μm級判定。根據此定標值,二個感測頭係判定磁鐵之位置。由此,可正確地判定與磁鐵同時移動相等的距離的夾具23之位置。較具體而言,於定標值之範圍別,判定夾具23配置於把持支持板2之外周端部的之前之位置、或夾具23把持著支持板2之外周端部、或是夾具23把持而損傷支持板2之外周端部。例如,可判定於定標在0~100之範圍的值之表示大於60的值時,夾具23被配置於把持支持板2之外周端部的之前之位置,表示大於10而為60以下之值時,夾具23被配置於可把持支持板2之外周端部的位置,在表示0以上、10以下之值時,夾具23被配置在相較於可把持支持板2之外周端部的位置而言更內側。   [0063] 於本實施形態1之支持體分離裝置10,此外亦具備控制氣體噴出部24之氣體之噴出、控制昇降部30或滑動驅動部25的控制部。   [0064] 尚,在本實施形態1係夾具23及氣體噴出部24之配設數為沿著平板部21之外周而成為4處所。然而,本發明係不限定於此配設數。可把持舉升層合體100之支持板2即可,夾具23亦可於平板部21之外周僅配設1處所。尚,在配設於複數處所的情況,該等係沿著平板部21之外周而等間隔地配設為理想。   [0065] 又,在本實施形態1係於各夾具設置二個傾斜面23b,但即使在僅設置一方之傾斜面23b的情況亦可舉升支持板2之外周部分。   [0066] <2.支持體分離方法>   說明藉由具備以上之構成的支持體分離裝置10而由層合體100分離支持板2的方法(支持體分離方法)。   [0067] 在本實施形態1的支持體分離方法係包含一種間隙形成步驟,其係固定基板,藉由至少一個之把持部而把持支持板2之外周端部而舉升,於基板1與支持板2之間形成間隙、一種間隙維持步驟,其係以從在間隙7所形成的面之背面吸附保持支持板2而舉升,維持間隙7、一種分離步驟,其係在間隙維持步驟後,從間隙7朝向層合體100之內部,由夾具23所具備的氣體噴出部24噴出氣體,從層合體100分離支持板2。   [0068] 第5(a)圖~第5(e)圖係說明本實施形態1之支持體分離方法的圖。尚,第5(a)圖~第5(e)圖係由與第1(b)圖相同方向視之的剖面圖。尚,在第5(a)圖~第5(e)圖係省略昇降部30之圖示。   [0069] 於第5(a)圖係表示作為光照射步驟藉由第1(b)圖所示的光照射部40而分離層4之外周端部變質而形成區域4a的層合體100,藉由多孔部51而吸附於平台50的狀態。在此狀態,以夾具23及氣體噴出部24為位於層合體100之外周端部之外側之方式調節保持部20之位置。尚,在此狀態,位準塊26亦抵接於支持板2之上面,吸附墊22係吸附保持支持板2之上面。   [0070] 接著,如第5(b)圖所示之方式,夾具23及氣體噴出部24為藉由滑動驅動部25而滑動移動而接近層合體100,夾具23之傾斜面23b為接觸於在支持板2之外周端部的倒角部位2a之下側(區域4a側)。   [0071] 然後,由第5(b)圖之狀態藉由夾具23及氣體噴出部24進而滑動移動,如第5(c)圖所示之方式,支持板2之倒角部位2a為藉由傾斜面23b而從離開區域4a的方向舉升。在此狀態,相對於在支持板2的區域4a的區域(亦包含倒角部位2a)與區域4a之間係形成間隙7(間隙形成步驟)。尚,在第5(c)圖所示的狀態,夾具23不僅滑動移動,藉由稍微上昇,亦可形成間隙7。   [0072] 接著,如第5(d)圖所示,夾具23及氣體噴出部24為受到由滑動驅動部25所致的驅動而從層合體100離開的方向滑動移動。在此狀態係即使夾具23之傾斜面23b與支持板2之倒角部位2a分離,亦因為吸附墊22為持續吸附而支持板2之倒角部位2a係維持舉升的狀態,可維持間隙7(間隙維持步驟)。   [0073] 接著,如第5(e)圖所示,平板部21上昇,吸附墊22、夾具23及氣體噴出部24之位置上昇。由此,吸附墊22吸附的支持板2之外周端部為更進一步舉升。若調整於此位置,則由氣體噴出部24噴射氣體(分離步驟)。如前述之方式,由氣體噴出部24(噴出口27)噴出的氣體係向斜下方向噴出。由此,氣體噴出前係於與分離層4相接的支持板2之區域附近噴出氣體,可使支持板2由分離層4剝離而分離。如已分離,停止由多孔部51所致的向層合體100之平台50之吸附,結束一連串之支持體分離方法。   [0074] 第6圖係將由氣體噴出部24噴出氣體的狀態,在層合體100之俯視表示的圖。在說明之方便上,平板部21等之構成係省略圖示。   [0075] 在第6圖係表示透過由各個被設置於4處所的氣體噴出部24噴出氣體而間隙7朝向層合體100之內側擴大的樣子。如第6圖所示,藉由在沿著層合體100之外周端部的4處所各自之間隙7擴大,相較於僅以吸附墊22分離支持板2的情況而言,不對支持板2帶來過度之應力,而可將支持板2由分離層4分離。此係在支持板2為薄且在結構上為脆的情況,因為可不使該支持板2破損且在短時間順利地分離所以非常有利。   [0076] 以上之一連串之動作係昇降部30、滑動驅動部25及氣體噴出部24為受到無圖示的控制部所致的控制而實現。   [0077] 例如,控制部係首先藉由控制昇降部30,使吸附墊22及夾具23下降至特定之高度,同時將平台50之多孔部51之吸引設為ON。接著,控制部係藉由控制滑動驅動部25,使夾具23朝向內側而滑動移動(亦可進而使夾具23上昇)而形成間隙。接著,使以吸附墊22所致的吸附開始。接著,藉由控制滑動驅動部25,使夾具23朝向外側而滑動移動至與支持板2之倒角部位2a分開的位置。接著,控制部係使以吸附墊22所致的吸附繼續的狀態,控制氣體噴出部24而使氣體噴出開始,與此大致同時,控制昇降部30而使吸附墊22上昇至特定之高度。   [0078] 如此的處理可根據事先設定的時序圖而進行,或是感測平板部21之高度、夾具23之位置或吸附墊22之位置,亦可檢測位置同時控制。於該時亦可使用前述的位置感測器。   [0079] <3.層合體>   關於第1圖之(a)所示,藉由有關本實施形態的支持體分離裝置10而分離支持板2的層合體100,詳細地說明。層合體100係將基板1、接著層3、藉由吸收光而變質的分離層4、由透過光的材料所構成的支持板2,以此順序層合而成。   [0080] (3.1)基板1   基板1係介由接著層3而貼附於已設置分離層4的支持板2。然後,基板1係以被支持板2支持的狀態,可供於薄化、安裝等之製程。作為基板1係不限定於矽晶圓基板,可使用陶瓷基板、薄的薄膜基板、可撓性基板等之任意之基板。   [0081] 尚,於該基板之表面亦可安裝結構物,例如積體電路、金屬凸塊等。   [0082] (3.2)支持板2   支持板2係支持基板1的支持體,介由接著層3,貼附於基板1。因此,作為支持板2係於基板1之薄化、搬送、安裝等之製程時,為了防止基板1之破損或變形而具有必要的強度即可。另外,如是使為了讓分離層變質之光透過者即可。由以上之觀點,作為支持板2係可舉出由玻璃、矽、丙烯酸系樹脂所構成者等。   [0083] 尚,支持板2係可使用300~1000μm之厚度者。藉由有關本實施形態的支持體分離方法,則即使是如此地厚度薄的支持板2(支持體),亦可防止該支持板2破損,同時由層合體合適地分離。   [0084] (3.3)接著層3   接著層3係為了貼附基板1與支持板2而使用。   [0085] 於用以形成接著層3的接著劑,例如可使用丙烯酸系、酚醛系、萘醌系、烴系、聚醯亞胺系、彈性體、聚碸系等之在該領域一般周知之各式各樣之接著劑,可較理想地使用聚碸系樹脂、烴樹脂、丙烯酸-苯乙烯系樹脂、馬來醯亞胺系樹脂、彈性體樹脂等或組合此等者等。   [0086] 接著層3之厚度係按照成為貼附之對象的基板1及支持板2之種類、施加於貼附後之基板1的處理等而適宜地設定即可,但10~150μm之範圍內為理想,15~100μm之範圍內為較理想。   [0087] 接著層3係為了貼附基板1與支持板2而使用。接著層3係例如可藉由旋轉塗布、浸漬法、輥式刮刀法、噴霧塗布、狹縫塗布等之方法而塗布接著劑而形成。又,接著層3係例如取代將接著劑直接塗布於基板1,亦可將接著劑事先塗布於兩面的薄膜(亦即,乾式薄膜),貼附於基板1而形成。   [0088] 接著層3係藉由為了貼附基板1與支持板2而使用的接著劑而形成的層。   [0089] 作為接著劑,例如可使用丙烯酸系、酚醛系、萘醌系、烴系、聚醯亞胺系、彈性體等之在該領域一般周知之各式各樣之接著劑。   [0090] 以下,關於接著層3含有的樹脂之組成進行說明。   [0091] 作為接著層3含有的樹脂係具備接著性者即可,例如可舉出烴樹脂、丙烯酸-苯乙烯系樹脂、馬來醯亞胺系樹脂、彈性體樹脂、聚碸系樹脂等,或是組合此等等。   [0092] (烴樹脂)   烴樹脂係具有烴骨架,將單體組成物聚合而成的樹脂。作為烴樹脂,可舉出環烯烴系聚合物(以下,有稱為「樹脂(A)」者,以及,萜烯樹脂、松香系樹脂及石油樹脂所構成的群中選擇至少1種之樹脂(以下,有稱為「樹脂(B)」者)等,但不限定於此。   [0093] 作為樹脂(A)亦可為將含有環烯烴系單體的單體成分聚合而成的樹脂。具體而言,可舉出含有環烯烴系單體的單體成分之開環(共)聚合物、使含有環烯烴系單體的單體成分加成(共)聚合的樹脂等。   [0094] 作為包含於構成樹脂(A)的單體成分的前述環烯烴系單體,例如可舉出降莰烯、降莰二烯等之二環物、二環戊二烯、羥基二環戊二烯等之三環物、四環十二烯等之四環物、環戊二烯三聚物等之五環物、四環戊二烯等之七環物、或此等多環物之烷基(甲基、乙基、丙基、丁基等)取代物、烯基(乙烯基等)取代物、亞烷基(亞乙基等)取代物、芳基(苯基、甲苯基、萘基等)取代物等。在此等之中特別是由降莰烯、四環十二烯、或此等之烷基取代物所構成的群中所選擇的降莰烯系單體為理想。   [0095] 構成樹脂(A)的單體成分係亦可含有與上述的環烯烴系單體可共聚的其他之單體,例如含有烯單體為理想。作為烯單體係例如可舉出乙烯、丙烯、1-丁烯、異丁烯、1-己烯、α-烯烴等。烯單體係可為直鏈狀,亦可為支鏈狀。   [0096] 另外,作為構成樹脂(A)的單體成分,含有環烯烴單體之情事係由高耐熱性(低的熱分解、熱重量減少性)之觀點而為理想。對於構成樹脂(A)的單體成分全體的環烯烴單體之比例係5mole %以上為理想,10mole %以上為較理想,20mole %以上為更理想。又,對於構成樹脂(A)的單體成分全體的環烯烴單體之比例係無特別限定,但由溶解性及在溶液之隨時間安定性之觀點係80mole %以下為理想,70mole %以下為較理想。   [0097] 另外,作為構成樹脂(A)的單體成分,亦可含有直鏈狀或支鏈狀之烯單體。對於構成樹脂(A)的單體成分全體的烯單體之比例係由溶解性及柔軟性之觀點係10~90mole %為理想,20~85mole %為較理想,30~80mole %為更理想。   [0098] 尚,樹脂(A)係例如以使環烯烴系單體與烯單體所構成的單體成分聚合而成的樹脂之方式,為未具有極性基的樹脂,在抑制在高溫下之氣體產生上為理想。   [0099] 關於聚合單體成分時之聚合方法或聚合條件等係無特別限制,依照通用方法適宜地設定即可。   [0100] 作為可作樹脂(A)使用的市售品係例如可舉出POLYPLASTICS公司製之「TOPAS」、三井化學公司製之「APEL」、日本ZEON公司製之「ZEONOR」及「ZEONEX」、JSR公司製之「ARTON」等。   [0101] 樹脂(A)之玻璃轉移溫度(Tg)係60℃以上為理想,70℃以上為特別理想。若樹脂(A)之玻璃轉移溫度為60℃以上,則在層合體曝露於高溫環境時可更抑制接著層3之軟化。   [0102] 樹脂(B)係由萜烯系樹脂、松香系樹脂及石油樹脂所構成的群中選擇至少1種之樹脂。具體而言,作為萜烯系樹脂係例如可舉出萜烯樹脂、萜烯酚樹脂、改質萜烯樹脂、氫化萜烯樹脂、氫化萜烯酚樹脂等。作為松香系樹脂係例如可舉出松香、松香酯、氫化松香、氫化松香酯、聚合松香、聚合松香酯、改質松香等。作為石油樹脂係例如可舉出脂肪族或芳香族石油樹脂、氫化石油樹脂、改質石油樹脂、脂環族石油樹脂、香豆酮‧茚石油樹脂等。在此等之中氫化萜烯樹脂、氫化石油樹脂為較理想。   [0103] 樹脂(B)之軟化點係無特別限定,但80~160℃為理想。若樹脂(B)之軟化點為80~160℃,則可抑制層合體曝露於高溫環境時軟化,不產生接著不良。   [0104] 樹脂(B)之重量平均分子量係無特別限定,但300~3,000為理想。若樹脂(B)之重量平均分子量為300以上,則成為耐熱性為充分者,在高溫環境下排氣量變少。另一方面,若樹脂(B)之重量平均分子量為3,000以下,則成為向烴系溶劑之接著層之溶解速度為良好者。因此,可將分離了支持體後之基板上之接著層之殘渣迅速地溶解、除去。尚,在本實施形態的樹脂(B)之重量平均分子量係意味著以凝膠滲透層析法(GPC)而測定的聚苯乙烯換算之分子量者。   [0105] 尚,作為樹脂,亦可使用混合樹脂(A)與樹脂(B)者。藉由混合而成為耐熱性為良好者。例如作為樹脂(A)與樹脂(B)之混合比例係(A):(B) = 80:20~55:45(質量比),因為高溫環境時之耐熱性及柔軟性優異故為理想。   [0106] (丙烯酸-苯乙烯系樹脂)   作為丙烯酸-苯乙烯系樹脂係例如可舉出將苯乙烯或苯乙烯之衍生物、與(甲基)丙烯酸酯等作為單體使用而聚合的樹脂。   [0107] 作為(甲基)丙烯酸酯係例如可舉出由鏈式結構所構成的(甲基)丙烯酸烷基酯、具有脂肪族環的(甲基)丙烯酸酯、具有芳香族環的(甲基)丙烯酸酯。由鏈式結構所構成的(甲基)丙烯酸烷基酯係可舉出具有碳數15~20之烷基的丙烯酸系長縺烷基酯、具有碳數1~14之烷基的丙烯酸系烷基酯等。作為丙烯酸系長縺烷基酯係可舉出烷基為n-十五烷基、n-十六烷基、n-十七烷基、n-十八烷基、n-十九烷基、n-二十烷基等的丙烯酸或甲基丙烯酸之烷基酯。尚,該烷基亦可為支鏈狀。   [0108] 作為具有碳數1~14之烷基的丙烯酸系烷基酯係可舉出使用於即存之丙烯酸系接著劑的一般周知之丙烯酸系烷基酯。例如可舉出烷基為由甲基、乙基、丙基、丁基、2-乙基己基、異辛基、異壬基、異癸基、十二烷基、月桂基、十三烷基等所構成的丙烯酸或甲基丙烯酸之烷基酯。   [0109] 作為具有脂肪族環的(甲基)丙烯酸酯係可舉出環己基(甲基)丙烯酸酯、環戊基(甲基)丙烯酸酯、1-金剛烷基(甲基)丙烯酸酯、降莰基(甲基)丙烯酸酯、異莰基(甲基)丙烯酸酯、三環癸基(甲基)丙烯酸酯、四環十二烷基(甲基)丙烯酸酯、二環戊基(甲基)丙烯酸酯等,但異莰基甲基丙烯酸酯、二環戊基(甲基)丙烯酸酯為較理想。   [0110] 作為具有芳香族環的(甲基)丙烯酸酯係無特別限定,但作為芳香族環係例如可舉出苯基、苄基、甲苯基、茬基、聯苯基、萘基、蒽基、苯氧甲基、苯氧乙基等。又,芳香族環係亦可具有碳數1~5之直鏈狀或支鏈狀之烷基。具體而言係苯氧乙基丙烯酸酯為理想。   [0111] (馬來醯亞胺系樹脂)   作為馬來醯亞胺系樹脂係例如作為單體,可舉出N-甲基馬來醯亞胺、N-乙基馬來醯亞胺、N-n-丙基馬來醯亞胺、N-異丙基馬來醯亞胺、N-n-丁基馬來醯亞胺、N-異丁基馬來醯亞胺、N-sec-丁基馬來醯亞胺、N-第三丁基馬來醯亞胺、N-n-戊基馬來醯亞胺、N-n-己基馬來醯亞胺、N-n-庚基馬來醯亞胺、N-n-辛基馬來醯亞胺、N-月桂基馬來醯亞胺、N-硬脂醯基馬來醯亞胺等之具有烷基的馬來醯亞胺,N-環丙基馬來醯亞胺、N-環丁基馬來醯亞胺、N-環戊基馬來醯亞胺、N-環己基馬來醯亞胺、N-環庚基馬來醯亞胺、N-環辛基馬來醯亞胺等之具有脂肪族烴基的馬來醯亞胺,N-苯基馬來醯亞胺、N-m-甲基苯基馬來醯亞胺、N-o-甲基苯基馬來醯亞胺、N-p-甲基苯基馬來醯亞胺等之具有芳基的芳香族馬來醯亞胺等聚合而得的樹脂。   [0112] 例如,可將以下述化學式(1)所表示的重複單位及以下述化學式(2)所表示的重複單位之共聚物的環烯烴共聚物作為接著成分之樹脂使用。(化學式(2)中,n為0或1~3之整數。)   作為如此的環烯烴共聚物係可使用APL 8008T、APL 8009T、以及APL 6013T(全部為三井化學公司製)等。   [0113] (彈性體)   彈性體係作為主鏈之構成單位含有苯乙烯單位為理想,該「苯乙烯單位」亦可具有取代基。作為取代基係例如可舉出碳數1~5之烷基、碳數1~5之烷氧基、碳數1~5之烷氧基烷基、乙醯氧基、羧基等。又,該苯乙烯單位之含量為14重量%以上、50重量%以下之範圍內為較理想。更進一步,彈性體係重量平均分子量為10,000以上、200,000以下之範圍內為理想。   [0114] 如苯乙烯單位之含量為14重量%以上、50重量%以下之範圍內,彈性體之重量平均分子量為10,000以上、200,000以下之範圍內,則因為容易地溶解於後述的烴系之溶劑,所以可較容易且迅速地除去接著層。又,藉由苯乙烯單位之含量及重量平均分子量為上述之範圍內,晶圓為對於供於阻劑微影步驟時所曝露的阻劑溶劑(例如PGMEA、PGME等)、酸(氫氟酸等)、鹼(TMAH等)發揮優異的耐性。   [0115] 尚,於彈性體亦可更混合上述的(甲基)丙烯酸酯。   [0116] 又,苯乙烯單位之含量係較理想為17重量%以上,又,較理想為40重量%以下。   [0117] 重量平均分子量之較理想的範圍係20,000以上,又,較理想的範圍係150,000以下。   [0118] 作為彈性體係如苯乙烯單位之含量為14重量%以上、50重量%以下之範圍內,彈性體之重量平均分子量為10,000以上、200,000以下之範圍內,則可使用各式各樣之彈性體。例如,可舉出聚苯乙烯-聚(乙烯/丙烯)嵌段共聚物(SEP)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯-丁二烯-丁烯-苯乙烯嵌段共聚物(SBBS)、以及,此等之氫化物、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(苯乙烯-異戊二烯-苯乙烯嵌段共聚物)(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SEEPS)、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SeptonV9461(kuraray 公司製)、SeptonV9475(kuraray 公司製))、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(具有反應性之聚苯乙烯系硬嵌段的SeptonV9827(kuraray 公司製))、聚苯乙烯-聚(乙烯-乙烯/丙烯)嵌段-聚苯乙烯嵌段共聚物(SEEPS-OH:末端氫氧基改質)等。可使用彈性體之苯乙烯單位之含量及重量平均分子量為上述之範圍內者。   [0119] 另外,在彈性體中氫化物亦較理想。如為氫化物則對熱的安定性提高,難以產生分解或聚合等之變質。又,由向烴系溶劑之溶解性及向阻劑溶劑之耐性之觀點亦較理想。   [0120] 另外,在彈性體中兩端為苯乙烯之嵌段聚合物者亦較理想。將熱安定性高的苯乙烯嵌段於兩末端所以顯現出更高的耐熱性。   [0121] 更具體而言係彈性體係苯乙烯及共軛二烯之嵌段共聚物之氫化物為較理想。對熱的安定性提高,難以產生分解或聚合等之變質。另外,以將熱安定性高的苯乙烯嵌段於兩末端而顯現出更高的耐熱性。更進一步,由向烴系溶劑之溶解性及向阻劑溶劑之耐性之觀點亦較理想。   [0122] 作為構成接著層3的接著劑所包含的彈性體而使用的市售品係例如可舉出kuraray 公司製「Septon(商品名)」、kuraray 公司製「HYBRAR(商品名)」、旭化成公司製「Tuftec(商品名)」、JSR公司製「DYNARON(商品名)」等。   [0123] 作為構成接著層3的接著劑所包含的彈性體之含量係例如將接著劑組成物全量作為100重量份,在50重量份以上、99重量份以下之範圍內為理想,在60重量份以上、99重量份以下之範圍內為較理想,在70重量份以上、95重量份以下之範圍內為最理想。藉由設為該等範圍內,可一邊維持耐熱性、同時可合適地貼合晶圓與支持體。   [0124] 另外,彈性體亦可混合複數之種類。總之,構成接著層3的接著劑亦可含有複數之種類之彈性體。複數之種類之彈性體之中至少一個為作為主鏈之構成單位含有苯乙烯單位即可。另外,複數之種類之彈性體之中至少一個係如苯乙烯單位之含量為14重量%以上、50重量%以下之範圍內,或是,重量平均分子量為10,000以上、200,000以下之範圍內,則為本發明之範疇。另外,在構成接著層3的接著劑,含有複數之種類之彈性體的情況,亦可以混合的結果,苯乙烯單位之含量成為上述之範圍內之方式調整。例如,若苯乙烯單位之含量為30重量%的kuraray 公司製之Septon(商品名)之Septon4033、與苯乙烯單位之含量為13重量%的之Septon(商品名)之Septon2063以重量比1比1混合,則對於接著劑所包含的彈性體全體的苯乙烯含量係成為21~22重量%,因而成為14重量%以上。另外,例如將苯乙烯單位為10重量%者與60重量%者以重量比1比1混合則成為35重量%,成為上述之範圍內。本發明亦可為如此的形態。另外,構成接著層3的接著劑所含有的複數之種類之彈性體係全部在上述之範圍內含有苯乙烯單位,而且,為上述之範圍內之重量平均分子量是最理想。   [0125] 尚,使用光硬化性樹脂(例如,UV硬化性樹脂)以外之樹脂而形成接著層3為理想。使用光硬化性樹脂以外之樹脂,可防止於接著層3之剝離或除去後,於基板1之微小的凹凸之周邊留下殘渣。特別是作為構成接著層3的接著劑係並非溶解於所有的溶劑,而是溶解於特定之溶劑為理想。此係因為並非於基板1施加物理性的力,而是藉由讓接著層3溶解於溶劑而可除去。在接著層3之除去時,即使由強度低下的基板1,也不使基板1破損、變形而可容易地除去接著層3。   [0126] (聚碸系樹脂)   用以形成接著層3的接著劑亦可含有聚碸系樹脂。藉由將接著層3以聚碸系樹脂形成,可製造即使在高溫處理層合體,亦可在之後之步驟溶解接著層,由基板剝離支持板的層合體。如接著層3包含聚碸樹脂,則例如即使藉由退火等而將層合體以300℃以上的高溫處理的高溫製程,亦可合適地使用層合體。   [0127] 聚碸系樹脂係具有由以下述一般式(3)所表示的構成單位,以及,以下述一般式(4)所表示的構成單位之中之至少1種之構成單位所構成的結構。(在此,通式(3)之R1 、R2 及R3 、以及通式(4)中之R1 及R2 係各自獨立而由伸苯基、伸萘基及伸蒽基所構成的群中選擇,X’係碳數為1以上、3以下之伸烷基。)   聚碸系樹脂係藉由具備以式(3)表示的聚碸構成單位及以式(4)表示的聚醚碸構成單位之中之至少1個,可形成一種層合體,其係貼附基板1與支持板2後,即使在高的溫度條件處理基板1,亦可防止因分解及聚合而接著層3為不溶化。另外,聚碸系樹脂係如為以上述式(3)表示的聚碸構成單位所構成的聚碸樹脂,則即使加熱至更高的溫度亦為安定。因此,可防止在洗淨後之基板1產生起因於接著層的殘渣。   [0128] 聚碸系樹脂之重量平均分子量(Mw)係30,000以上、70,000以下之範圍內為理想,30,000以上、50,000以下之範圍內為較理想。如聚碸系樹脂之重量平均分子量(Mw)係30,000以上之範圍內,則例如可得到可在300℃以上之高的溫度使用的接著劑組成物。另外,如聚碸系樹脂之重量平均分子量(Mw)係70,000以下之範圍內,則可依溶劑而合適地溶解。亦即,可得到依溶劑而可合適地除去的接著劑組成物。   [0129] (稀釋溶劑)   作為形成接著層3時使用的稀釋溶劑係例如可舉出己烷、庚烷、辛烷、壬烷、異壬烷、甲基辛烷、癸烷、十一烷、十二烷、十三烷等之直鏈狀之烴、碳數4至15之支鏈狀之烴,例如,環己烷、環庚烷、環辛烷、萘、十氫萘、四氫萘等之環狀烴、對薄荷烷、鄰薄荷烷、間薄荷烷、二苯基薄荷烷、1,4-萜二醇、1,8-萜二醇、莰烷、降莰烷、蒎烷、側柏烷、蒈烷、長葉烯、香葉醇、橙花醇、沉香醇、檸檬醛、香茅醇、薄荷醇、異薄荷醇、新薄荷醇、α-萜品醇、β-萜品醇、γ-萜品醇、萜品烯-1-醇、萜品烯-4-醇、二氫萜品基乙酸酯、1,4-桉油醇、1,8-桉油醇、莰醇、香芹酮、紫羅蘭酮、側柏酮、樟腦、d-檸檬烯、l-檸檬烯、雙戊烯等之萜烯系溶劑;γ-丁內酯等之內酯類;丙酮、甲基乙基酮、環己酮(CH)、甲基-n-戊基酮、甲基異戊基酮、2-庚酮等之酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等之多價醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯、或二丙二醇單乙酸酯等之具有酯鍵的化合物、具有前述多價醇類或前述酯鍵的化合物之單甲基醚、單乙基醚、單丙基醚、單丁基醚等之單烷基醚或單苯基醚等之具有醚鍵的化合物等之多價醇類之衍生物(在此等之中係丙二醇單甲基醚乙酸酯(PGMEA)、丙二醇單甲基醚(PGME)為理想);如二噁烷般的環式醚類、或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、甲氧基乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等之酯類;苯甲醚、乙基苄基醚、甲苯酚基甲基醚、二苯基醚、二苄基醚、苯乙醚、丁基苯基醚等之芳香族系有機溶劑等。   [0130] (其他之成分)   構成接著層3的接著劑係在不損及本質上的特性的範圍,亦可更包含有混合性的其他物質。例如,可更使用用以改良接著劑之性能之附加的樹脂、可塑劑、接著補助劑、安定劑、著色劑、熱聚合抑制劑及界面活性劑等,所慣用的各種添加劑。   [0131] (3.4)分離層4   接著,所謂分離層4係藉由吸收介由支持板2而照射的光而變質的材料所形成的層。又,如第5(e)圖所示,在由設置於基板1與支持板2之間的間隙向層合體100之內部噴射流體時,在區域4a以外的區域的分離層4亦被破壞。   [0132] 分離層4之厚度係例如,0.05μm以上、50μm以下之範圍內為較理想,0.3μm以上、1μm以下之範圍內為更理想。如分離層4之厚度為包括在0.05μm以上、50μm以下之範圍,則可藉由短時間之光之照射及低能量之光之照射,使分離層4產生所期望的變質。另外,分離層4之厚度係由生產性之觀點視之,包括在1μm以下之範圍為特別理想。   [0133] 尚,在層合體100,在分離層4與支持板2之間亦可更形成其他層。在此情況,其他層係由透過光的材料所構成即可。由此,可適宜地追加不妨礙向分離層4之光之入射,對層合體100附予理想的性質等之層。依構成分離層4的材料之種類,可使用的光之波長不同。因而,構成其他層的材料係無讓全部之光透過的必要,由可使構成分離層4的材料變質的波長之光透過的材料可適宜地選擇。   [0134] 另外,分離層4係僅由具有吸收光的結構的材料形成為理想,但在不損及本發明的本質上的特性的範圍,添加未具有吸收光的結構的材料,亦可形成分離層4。另外,在分離層4的相對於接著層3的側之面為平坦(未形成凹凸)為理想,由此,可容易地進行分離層4之形成,而且在貼附亦成為可均勻地貼附。   [0135] (氟碳)   分離層4亦可由氟碳所構成。藉由分離層4係以氟碳而構成,以吸收光而產生變質,作為其結果,失去接受光之照射前之強度或接著性。因而,藉由施加稍微的外力(例如,舉升支持板2等),可破壞分離層4,可輕易地分離支持板2與基板1。構成分離層4的氟碳係可藉由電漿CVD(化學氣相沈積)法而合適地成膜。   [0136] 氟碳係依該種類而吸收具備固有之範圍之波長的光。藉由將使用在分離層4的氟碳吸收的範圍之波長之光照射於分離層,可使氟碳合適地變質。尚,在分離層4的光之吸收率係80%以上為理想。   [0137] 作為照射於分離層4的光係依照氟碳可吸收的波長,例如適宜地使用YAG雷射、紅寶石雷射、玻璃雷射、YVO4 雷射、LD雷射、光纖雷射等之固體雷射,色素雷射等之液體雷射,CO2 雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光、或是非雷射光即可。作為可使氟碳變質的波長係不在此限定,例如可使用600nm以下之範圍者。   [0138] (將具有光吸收性的結構包含於該重複單位的聚合物)   分離層4係亦可含有將具有光吸收性的結構包含於該重複單位的聚合物。該聚合物係接受光之照射而變質。該聚合物之變質係藉由吸收照射上述結構的光而產生。分離層4係作為聚合物之變質之結果,失去接受光之照射前之強度或接著性。因而,藉由施加稍微的外力(例如,舉升支持板2等),可破壞分離層4,可輕易地分離支持板2與基板1。   [0139] 具有光吸收性的上述結構係吸收光,作為重複單位使含有該結構的聚合物變質的化學結構。該結構係例如含有由取代或非取代之苯、縮合環或雜環所構成的共軛π電子系的原子團。更詳細而言,該結構係可為卡多結構、或存在於上述聚合物之側鏈的二苯基酮結構、二苯基亞碸結構、二苯基碸結構(雙苯基碸結構)、二苯基結構或二苯基胺結構。   [0140] 在上述結構為存在於上述聚合物之側鏈的情況,該結構係藉由以下之式而可表示。(式中,R係各自獨立的烷基、芳基、鹵素、氫氧基、酮基、亞碸基、磺基或N(R4 )(R5 )(在此,R4 及R5 係各自獨立的氫原子或碳數1~5之烷基)、Z係不存在或-CO-、 -SO2 -、-SO-或是-NH-,n為0或1~5之整數。)   另外,上述聚合物係例如含有在以下之式之中,以(a)~(d)之任一表示的重複單位、或以(e)表示、或將(f)之結構包含於該主鏈。(式中,l為1以上之整數、m為0或1~2之整數、X為在(a)~(e)上述之“化3”所示的式之任一者、在(f)為上述之“化3”所示的式之任一者、或不存在、Y1 及Y2 係各自獨立的-CO-或SO2 -。l係理想為10以下之整數。)   作為上述之“化3”所表示的苯環、縮合環及雜環之例係可舉出苯基、取代苯基、苄基、取代苄基、萘、取代萘、蒽、取代蒽、蒽醌、取代蒽醌、吖啶、取代吖啶、偶氮苯、取代偶氮苯、螢光胺、取代螢光胺、螢光酮、置換螢光酮、咔唑、取代咔唑、N-烷基咔唑、二苯並呋喃、取代二苯並呋喃、菲、取代菲、芘及取代芘。在已例示的取代基為更具有取代基的情況,該取代基係例如由烷基、芳基、鹵素原子、烷氧基、硝基、醛類、氰基、醯胺、二烷基胺基、磺醯胺、醯亞胺、羧酸、羧酸酯、磺酸、磺酸酯、烷基胺基及芳基胺基選擇。   [0141] 上述之“化3”所示的取代基之中,具有二個苯基的第5個之取代基,作為Z為-SO2 -的情況之例係可舉出雙(2,4-二羥苯基)碸、雙(3,4-二羥苯基)碸、雙(3,5-二羥苯基)碸、雙(3,6-二羥苯基)碸、雙(4-羥苯基)碸、雙(3-羥苯基)碸、雙(2-羥苯基)碸、及雙(3,5-二甲基-4-羥苯基)碸等。   [0142] 上述之“化3”所示的取代基之中,具有二個苯基的第5個之取代基,作為Z為-SO-的情況之例係可舉出雙(2,3-二羥苯基)亞碸、雙(5-氯-2,3-二羥苯基)亞碸、雙(2,4-二羥苯基)亞碸、雙(2,4-二羥基-6-甲基苯基)亞碸、雙(5-氯-2,4-二羥苯基)亞碸、雙(2,5-二羥苯基)亞碸、雙(3,4-二羥苯基)亞碸、雙(3,5-二羥苯基)亞碸、雙(2,3,4-三羥苯基)亞碸、雙(2,3,4-三羥基-6-甲基苯基)亞碸、雙(5-氯-2,3,4-三羥苯基)亞碸、雙(2,4,6-三羥苯基)亞碸、雙(5-氯-2,4,6-三羥苯基)亞碸等。   [0143] 上述之“化3”所示的取代基之中,具有二個苯基的第5個之取代基,作為Z為-C(=O)-的情況之例係可舉出2,4-二羥基二苯甲酮、2,3,4-三羥基二苯甲酮、2,2’,4,4’-四羥基二苯甲酮、2,2’,5,6’-四羥基二苯甲酮、2-羥基-4-甲氧基二苯甲酮、2-羥基-4-辛氧基二苯甲酮、2-羥基-4-十二烷基二苯甲酮、2,2’-二羥基-4-甲氧基二苯甲酮、2,6-二羥基-4-甲氧基二苯甲酮、2,2’-二羥基-4,4’-二甲氧基二苯甲酮、4-胺基-2’-羥基二苯甲酮、4-二甲基胺基-2’-羥基二苯甲酮、4-二乙基胺基-2’-羥基二苯甲酮、4-二甲基胺基-4’-甲氧基-2’-羥基二苯甲酮、4-二甲基胺基-2’,4’-二羥基二苯甲酮、及4-二甲基胺基-3’,4’-二羥基二苯甲酮等。   [0144] 在上述結構為存在於上述聚合物之側鏈的情況,包含上述結構的重複單位之占有上述聚合物的比例係在成為分離層4之光之透過率為0.001%以上、10%以下的範圍內。如以該比例為包括於如此的範圍之方式調製聚合物,則分離層4為充分地吸收光,可確實且迅速地變質。亦即,由層合體100之支持板2之除去為容易,可使在該除去所必要的光之照射時間縮短。   [0145] 上述結構係藉由該種類之選擇,可吸收具有所期望之範圍之波長的光。例如,上述結構可吸收的光之波長係100nm以上、2,000nm以下之範圍內為較理想。此之範圍內之中,上述結構可吸收的光之波長係較短波長側,例如為100nm以上、500nm以下之範圍內。例如,上述結構係理想為藉由吸收具有大約300nm以上、370nm以下之範圍內之波長的紫外光,可使含有該結構的聚合物變質。   [0146] 上述結構可吸收的光係例如高壓水銀燈(波長:254nm以上、436nm以下)、KrF準分子雷射(波長:248nm)、ArF準分子雷射(波長:193nm)、F2準分子雷射(波長:157nm)、XeCl雷射(波長:308nm)、XeF雷射(波長:351nm)或是固體UV雷射(波長:355nm)所發出的光、或g線(波長:436nm)、h線(波長:405nm)或i線(波長:365nm)等。   [0147] 上述的分離層4係含有作為重複單位包含上述結構的聚合物,但分離層4係更進一步,可含有上述聚合物以外之成分。作為該成分係可舉出填料、可塑劑及可提高支持板2之剝離性的成分等。此等之成分係由不妨礙或促進依上述結構的光之吸收以及聚合物之變質的先前一般周知之物質或材料中可適宜地選擇。   [0148] (無機物)   分離層4亦可由無機物所構成。藉由分離層4係以無機物而構成,以吸收光而產生變質,作為其結果,失去接受光之照射前之強度或接著性。因而,藉由施加稍微的外力(例如,舉升支持板2等),可破壞分離層4,可輕易地分離支持板2與基板1。   [0149] 上述無機物係如為藉由吸收光而變質的構成即可,例如可合適地使用由金屬、金屬化合物及碳所構成的群中選擇的1種以上之無機物。所謂金屬化合物係指含有金屬原子的化合物,例如可為金屬氧化物、金屬氮化物。作為如此的無機物之例示係不限定於此,可舉出由金、銀、銅、鐵、鎳、鋁、鈦、鉻、SiO2 、SiN、Si3 N4 、TiN及碳所構成的群中選擇1種以上之無機物。尚,所謂碳係亦可含有碳之同素異形體的概念,例如、可為鑽石、富勒烯、類鑽碳、奈米碳管等。   [0150] 上述無機物係依該種類而吸收具備固有之範圍之波長的光。藉由將使用在分離層4的無機物吸收的範圍之波長之光照射於分離層,可使上述無機物合適地變質。   [0151] 作為照射於由無機物所構成的分離層4的光係依照上述無機物可吸收的波長,例如適宜地使用YAG雷射、紅寶石雷射、玻璃雷射、YVO4 雷射、LD雷射、光纖雷射等之固體雷射,色素雷射等之液體雷射,CO2 雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光、或是非雷射光即可。   [0152] 由無機物所構成的分離層4係例如藉由濺鍍、化學氣相沈積(CVD)、鍍覆、電漿CVD、旋轉塗布等之一般周知之技術,可形成於支持板2上。由無機物所構成的分離層4之厚度係無特別限定,如為可充分吸收所使用的光的膜厚即可,例如設為0.05μm以上、10μm以下之範圍內之膜厚為較理想。另外,亦可在構成分離層4的無機物所構成的無機膜(例如,金屬膜)之兩面或一面事先塗布接著劑,貼附於支持板2及基板1。   [0153] 尚,在作為分離層4使用金屬膜的情況係藉由分離層4之膜質、雷射光源之種類、雷射輸出等之條件係可產生雷射之反射或向膜之帶電等。因此,以將防反射膜或防帶電膜設置於分離層4之上下或任一方,謀求該等之對策為理想。   [0154] (具有紅外線吸收性之結構的化合物)   分離層4係亦可藉由具有紅外線吸收性之結構的化合物而形成。該化合物係藉由吸收紅外線而變質。分離層4係作為化合物之變質之結果,失去接受紅外線之照射前之強度或接著性。因而,藉由施加稍微的外力(例如,舉升支持體等),可破壞分離層4,可輕易地分離支持板2與基板1。   [0155] 作為具有紅外線吸收性的結構、或是含有具有紅外線吸收性的結構的化合物係例如可為烷烴、烯烴(乙烯基、反式、順式、亞乙烯、三取代、四取代、共軛、累積多烯、環式)、炔烴(一取代、二取代)、單環式芳香族(苯、一取代、二取代、三取代)、醇及酚類(OH自由基、分子內氫鍵、分子間氫鍵、飽和第二級、飽和第三級、不飽和第二級、不飽和第三級)、縮醛、縮酮、脂肪族醚、芳香族醚、乙烯基醚、環氧乙烷環醚、過氧化物醚、酮、二烷羰基、芳香族羰基、1,3-二酮之烯醇、o-羥基芳基酮、二烷基醛、芳香族醛、羧酸(二聚物,羧酸陰離子)、甲酸酯、乙酸酯、共軛酯、非共軛酯、芳香族酯、內酯(β-、γ-、δ-)、脂肪族酸氯化物、芳香族酸氯化物、酸酐(共軛、非共軛、環式、非環式)、一級醯胺、二級醯胺、內醯胺、一級胺(脂肪族、芳香族)、二級胺(脂肪族、芳香族)、三級胺(脂肪族、芳香族)、一級胺鹽、二級胺鹽、三級胺鹽、銨離子、脂肪族腈、芳香族腈、碳二醯亞胺、脂肪族異腈、芳香族異腈、異氰酸酯、硫氰酸酯、脂肪族硫氰酸酯、芳香族硫氰酸酯、脂肪族硝化合物、芳香族硝化合物、硝胺、亞硝胺、硝酸酯、亞硝酸酯、亞硝基鍵(脂肪族、芳香族、單體、二聚物)、硫醇、硫酚及硫酸等之硫化合物、硫羰基、亞碸、碸、磺醯氯、一級磺醯胺、二級磺醯胺、硫酸酯、碳-鹵素鍵、Si-A1 鍵(A1 係H、C、O或鹵素)、P-A2 鍵(A2 係H、C或O)、或Ti-O鍵。   [0156] 作為含有上述碳-鹵素鍵的結構係例如可舉出-CH2 Cl、-CH2 Br、-CH2 I、-CF2 -、-CF3 、-CH=CF2 、 -CF=CF2 、氟化芳基、及氯化芳基等。   [0157] 作為含有上述Si-A1 鍵的結構係可舉出SiH、SiH2 、SiH3 、Si-CH3 、Si-CH2 -、Si-C6 H5 、SiO-脂肪族、Si-OCH3 、Si-OCH2 CH3 、Si-OC6 H5 、Si-O-Si、Si-OH、SiF、SiF2 及SiF3 等。作為含有Si-A1 鍵的結構係特別是形成矽氧烷骨架及倍半矽氧烷骨架為理想。   [0158] 作為含有上述P-A2 鍵的結構係可舉出PH、PH2 、P-CH3 、P-CH2 -、P-C6 H5 、A3 3 -P-O(A3 係脂肪族或芳香族)、(A4 O)3 -P-O(A4 係烷基)、P-OCH3 、P-OCH2 CH3 、P-OC6 H5 、P-O-P、P-OH及O=P-OH等。   [0159] 上述結構係藉由該種類之選擇,可吸收具有所期望之範圍之波長的紅外線。具體而言係上述結構為可吸收的紅外線之波長係例如1μm以上、20μm以下之範圍內,在2μm以上、15μm以下之範圍內可較合適地吸收。更進一步,於上述結構為Si-O鍵、Si-C鍵及Ti-O鍵的情況係可為9μm以上、11μm以下之範圍內。尚,各結構可吸收的紅外線之波長係該業者則可容易地理解。例如,作為在各結構的吸收帶,可參照非專利文獻:SILVERSTEIN・BASSLER・MORRILL著「依有機化合物之光譜的鑒定法(第5版)-MS、IR、NMR、UV之併用-」(1992年發行)第146頁~第151頁之記載。   [0160] 作為被使用於分離層4之形成,具有紅外線吸收性之結構的化合物係在具有如上述之結構的化合物之中,如為可為了塗布而溶解於溶媒,可固化而形成固層者,則無特別限定。然而,於使在分離層4的化合物有效果地變質,容易將支持板2與基板1分離係理想為在分離層4的紅外線之吸收大,亦即,於分離層4照射紅外線時之紅外線之透過率低。具體而言係在分離層4的紅外線之透過率為低於90%為理想,紅外線之透過率為低於80%為較理想。   [0161] 如舉出一例而說明,則作為具有矽氧烷骨架的化合物係例如可使用以下述化學式(5)所表示的重複單位及以下述化學式(6)所表示的重複單位之共聚物的樹脂、或是以下述化學式(5)所表示的重複單位及來自丙烯酸系化合物之重複單位之共聚物的樹脂。(化學式(6)中,R6 係氫、碳數10以下之烷基、或碳數10以下之烷氧基。)   其中,作為具有矽氧烷骨架的化合物係以上述化學式(5)所表示的重複單位及以下述化學式(7)所表示的重複單位之共聚物的t-丁基苯乙烯(TBST)-二甲基矽氧烷共聚物為較理想,將以上述式(5)所表示的重複單位及以下述化學式(7)所表示的重複單位以1:1含有,TBST-二甲基矽氧烷共聚物為更理想。另外作為具有倍半矽氧烷骨架的化合物,例如,可使用將以下述化學式(8)所表示的重複單位及以下述化學式(9)所表示的重複單位之共聚物的樹脂。(化學式(8)中,R7 係氫或碳數1以上、10以下之烷基、化學式(9)中,R8 係碳數1以上、10以下之烷基或苯基。)   作為具有倍半矽氧烷骨架的化合物係除此以外亦可合適地利用在日本特開2007-258663號公報(2007年10月4日公開)、日本特開2010-120901號公報(2010年6月3日公開)、日本特開2009-263316號公報(2009年11月12日公開)、以及日本特開2009--263596號公報(2009年11月12日公開)所開示的各倍半矽氧烷樹脂。   [0162] 其中,作為具有倍半矽氧烷骨架的化合物係以下述化學式(10)所表示的重複單位及以下述化學式(11)所表示的重複單位之共聚物為較理想,將以下述化學式(10)所表示的重複單位及以下述化學式(11)所表示的重複單位以7:3含有的共聚物為更理想。作為具有倍半矽氧烷骨架的聚合物係可有隨機結構、梯形結構及籠型結構,而任一之結構均可。   [0163] 另外,含有Ti-O鍵的化合物係例如可舉出(i)四-i-丙氧基鈦、四-n-丁氧基鈦、肆(2-乙基己氧基)鈦、及鈦-i-丙氧基伸辛基乙醇酸酯等之烷氧基鈦;(ii)二-i-丙氧基–雙(乙醯丙酮)鈦、及丙烷二氧基鈦雙(乙基乙醯乙酸酯)等之螯合鈦;(iii) i-C3 H7 O-[-Ti(O-i-C3 H7 )2 -O-]n -i-C3 H7 及n-C4 H9 O-[-Ti(O-n-C4 H9 )2 -O-]n -n-C4 H9 等之鈦聚合物;(iv)三-n-丁氧基鈦單硬脂酸酯、硬脂酸鈦、二-i-丙氧基鈦二異硬脂酸酯及(2-n-丁氧基羰基苯甲醯氧基)三丁氧基鈦等之醯化物鈦;(v)二-n-丁氧基–雙(三乙醇胺酮)鈦等之水溶性鈦化合物等。   [0164] 其中,作為含有Ti-O鍵的化合物係二-n-丁氧基‧雙(三乙醇胺酮)鈦(Ti(OC4 H9 )2 [OC2 H4 N(C2 H4 OH)2 ]2 )為理想。   [0165] 上述的分離層4係含有具有紅外線吸收性之結構的化合物,但分離層4係更進一步,可含有上述化合物以外之成分。作為該成分係可舉出填料、可塑劑及可提高支持板2之剝離性的成分等。此等之成分係由不妨礙或促進依上述結構的紅外線之吸收以及化合物之變質的先前一般周知之物質或材料中可適宜地選擇。   [0166] (紅外線吸收物質)   分離層4係亦可含有紅外線吸收物質。藉由分離層4係以含有紅外線吸收物質而構成,以吸收光而產生變質,作為其結果,失去接受光之照射前之強度或接著性。因而,藉由施加稍微的外力(例如,舉升支持板2等),可破壞分離層4,可輕易地分離支持板2與基板1。   [0167] 紅外線吸收物質係藉由吸收紅外線而變質的構成即可,例如可合適地使用碳黑、鐵粒子、或鋁粒子。紅外線吸收物質係依該種類而吸收具備固有之範圍之波長的光。藉由將使用在分離層4的紅外線吸收物質吸收的範圍之波長之光照射於分離層4,可使紅外線吸收物質合適地變質。   [0168] (反應性聚倍半矽氧烷)   分離層4係可藉由使反應性聚倍半矽氧烷聚合而形成,由此,分離層4係具備高的耐藥品性及高耐熱性。   [0169] 在本說明書中,所謂反應性聚倍半矽氧烷係於聚倍半矽氧烷骨架之末端具有矽醇基、或藉由水解而可形成矽醇基的官能基的聚倍半矽氧烷,藉由縮合該矽醇基或可形成矽醇基的官能基,可互相聚合者。另外,反應性聚倍半矽氧烷係如具備矽醇基、或可形成矽醇基的官能基,則可採用具備隨機結構、籠型結構、梯形結構等之倍半矽氧烷骨架者。   [0170] 另外,反應性聚倍半矽氧烷係具有下述式(12)所示的結構為較理想。在式(12)中,R”係各自獨立地,由氫及碳數1以上、10以下之烷基所構成的群中選擇,由氫及碳數1以上、5以下之烷基所構成的群中選擇為較理想。R”如為氫或碳數1以上、10以下之烷基,則藉由在分離層形成步驟的加熱,可使藉由式(12)所示的反應性聚倍半矽氧烷合適地縮合。   [0171] 式(12)中,p係1以上、100以下之整數為理想,1以上、50以下之整數為較理想。反應性聚倍半矽氧烷係藉由具備以式(12)所示的重複單位,比使用其他之材料而形成,Si-O鍵之含量更高,可形成在紅外線(0.78μm以上、1000μm以下),理想為遠紅外線(3μm以上、1000μm以下),更理想為波長9μm以上、11μm以下的吸光度高的分離層4。   [0172] 另外,式(12)中,R’係各自獨立,相互相同、或相異的有機基。在此,R係例如為芳基、烷基及烯基等,此等之有機基係亦可具有取代基。   [0173] 在R’為芳基的情況,可舉出苯基、萘基、蒽基、菲基等,苯基為較理想。另外,芳基係亦可介由碳數1~5之伸烷基而鍵結於聚倍半矽氧烷骨架。   [0174] 在R’為烷基的情況,作為烷基係可舉出直鏈狀、支鏈狀或環狀之烷基。另外,在R為烷基的情況,碳數係1~15為理想,1~6為較理想。另外,在R為環狀之烷基的情況,亦可為作為單環狀或二~四環狀之結構的烷基。   [0175] 在R’為烯基的情況,與在烷基的情況相同,可舉出直鏈狀、支鏈狀、或環狀之烯基,烯基係碳數為2~15為理想,2~6為較理想。另外,在R為環狀之烯基的情況,亦可為作為單環狀或二~四環狀之結構的烯基。作為烯基,例如可舉出乙烯基及烯丙基等。   [0176] 另外,作為R’可具有的取代基係可舉出氫氧基及烷氧基等。在取代基為烷氧基的情況,可舉出直鏈狀、支鏈狀、或環狀之烷基烷氧基,在烷氧基的碳數為1~15為理想,1~10為較理想。   [0177] 另外,在一個觀點中,反應性聚倍半矽氧烷之矽氧烷含量係70mole %以上、99mole %以下為理想,80mole %以上、99mole %以下為較理想。如反應性聚倍半矽氧烷之矽氧烷含量係70mole %以上、99mole %以下,則可形成藉由照射紅外線(理想為遠紅外線,更理想為波長9μm以上、11μm以下之光)而可合適地變質的分離層。   [0178] 另外,在一個觀點中,反應性聚倍半矽氧烷之重量平均分子量(Mw)係500以上、50,000以下為理想,1,000以上、10,000以下為較理想。如反應性聚倍半矽氧烷之重量平均分子量(Mw)係500以上、50,000以下,則可合適地溶解於溶劑,可合適地塗布於支持體上。   [0179] 作為反應性聚倍半矽氧烷可使用的市售品係例如可舉出小西化學工業公司製之SR-13、SR-21、SR-23及SR-33等。   [0180] <4.層合體之變形例>   在上述實施形態1係使用在支持板2與接著層3之間有分離層4的層合體100。然而,在採用具有藉由施加機械上的力而可剝離的程度之接著力的接著層的情況,即使是無分離層,接著層為直接接著於基板與支持板的層合體,亦可使用在實施形態1已說明的支持體分離裝置而分離支持板。   [0181] 作為可形成如該方式的,具有以施加機械上的力而可剝離的程度之接著力的接著層的接著劑係例如可舉出感壓性接著劑、可剝離性接著劑等。作為感壓性接著劑(黏著劑)係例如可舉出包含乳膠橡膠、丙烯酸橡膠、異戊二烯橡膠等之合成橡膠或增黏樹脂等般的一般周知之感壓性接著劑。又,作為可剝離性接著劑係有可剝離性即可,例如亦可是藉由於熱可塑性樹脂、光硬化性樹脂或熱硬化性樹脂等調配蠟或聚矽氧等之脫模劑而調整接著力的接著劑。又,亦可為硬化型之接著劑,其係包含熱硬化性樹脂或光硬化性樹脂等,藉由使此等之樹脂硬化而顯現可剝離性。又,如此的可剝離的接著劑係可為將蜜蠟或蠟等之接著力低的熱可塑性樹脂作為主要的成分包含而成的接著劑。   [0182] [實施形態2]   在上述實施形態1係如第6圖所示般地,說明由全部設置於4處所的氣體噴出部24同時使氣體噴出的構成,但本發明係不限定於此。在本實施形態2係關於有關氣體噴出的其他態樣,使用第7圖而說明。   [0183] 第7圖係表示本實施形態2之構成,將由氣體噴出部24噴出氣體時之模式圖,在俯視層合體100的狀態表示的圖。尚,第7圖係對應於上述實施形態1之第6圖的圖。   [0184] 在本實施形態2係在由氣體噴出部24噴出氣體的步驟,首先如第7(a)圖所示,由在位置(i)的氣體噴出部24噴出氣體,此時在位置(ii)~(iv)的氣體噴出部24係不噴出氣體。在此係由在位置(i)的氣體噴出部24例如將3秒鐘、0.5L/分之氣體噴吹於間隙7。   [0185] 接著,切換氣體之噴出處所,如第7(b)圖所示,開始由在位置(iv)的氣體噴出部24之氣體之噴出,停止在位置(i)的氣體噴出部24之氣體噴出。此時,在位置(ii)及(iii)的氣體噴出部24係不噴出氣體。在此係由在位置(iv)的氣體噴出部24例如將3秒鐘、0.5L/分之氣體噴吹於間隙7。   [0186] 接著,切換氣體之噴出處所,如第7(c)圖所示,開始由在位置(i)及(iv)的氣體噴出部24之氣體之噴出。此時,在位置(ii)及(iii)的氣體噴出部24係不噴出氣體。在此係由在位置(i)及(iv)的氣體噴出部24例如將5秒鐘、0.5L/分之氣體噴吹於間隙7。   [0187] 藉由經過以上之步驟,亦可將支持板2從層合體100分離。   [0188] 以上之氣體噴出處所之切換係在上述實施形態1之支持體分離裝置10之無圖示的控制裝置控制而進行即可。   [0189] [實施形態3]   在上述實施形態1係如第3(c)圖所示,說明在各夾具23有二個傾斜面23b而於該之間配設噴出口27的構成。然而,在本發明的噴出口27之配設位置係不限定於此。噴出口27係配設於傾斜面23b之附近即可。關於此,使用第8圖而說明。   [0190] 第8圖係表示本實施形態3之構成的圖。在本實施形態3係除了傾斜面23b及噴出口27之配設形態為與實施形態1有相異的點以外,其他具有與實施形態1相同構成。   [0191] 具體而言,如第8圖所示,在本實施形態3係沿著對立面23a之下端邊(底邊),於該中間部分形成一個傾斜面23b,以挾持此傾斜面23b之方式,配設噴出口27。   [0192] 以如此之方式,藉由將噴出口27之配設位置設為傾斜面23b之附近,在支持板2之外周端部,使傾斜面23b抵接在位於相對於平板部21的面之背面側的倒角部位2a時,可有效地噴出氣體於形成在支持板2之外周部分的間隙,可合適地把持支持板2之外周部分。   [0193] [實施形態4]   在上述實施形態1係氣體噴出部24已連接於設置在各夾具23的噴出口27的態樣,但本發明係不限定於此。例如,亦可在吸附墊22為吸附於支持板2之上面之外周部分而維持間隙7的狀態,噴出氣體的一個噴嘴為在層合體100之周緣部分沿著圓周方向而移動,噴出氣體於間隙7的態樣。   [0194] [實施形態5]   上述實施形態1係夾具23及氣體噴出部24為一體性地昇降,且成為一體性地滑動移動的構成。然而,本發明係不限定於此,亦可各個夾具23及氣體噴出部24為具備驅動機構,實施第5(a)圖~第5(e)圖所示的各步驟。   [0195] 尚,各自具備驅動機構的情況,在第5(e)圖係亦可使氣體噴出部24移動至於氣體噴出理想的位置之後,由氣體噴出部24噴射氣體。由此,可較有效果地擴大間隙。   [0196] [其他實施形態]   在上述之實施形態,在層合體之俯視的形狀為圓形,但藉由有關本發明的支持體分離裝置及支持體分離方法而分離的層合體之俯視的形狀(亦即,在基板及支持體之俯視的形狀)亦可為長方形、正方形等之多角形。有關本發明的支持體分離裝置及支持體分離方法係藉由在基板與支持體之間噴出流體,如可分離基板與支持體即可,層合體之俯視的形狀係不限定。因而,有關本發明的支持體分離裝置及支持體分離方法係不限定於進行包含半導體元件(電子零件)的半導體封裝(半導體裝置)而已知的WLP(Wafer Level Package(晶圓級封裝)),亦可合適地應用於PLP(Panel Level Package(面板級封裝))。   [0197] 本發明係不限定於上述的各實施形態,在請求項所示的範圍可為各式各樣之變更,關於適宜地組合各自開示於不同的實施形態的技術上的手段而得到的實施形態亦包含於本發明之技術上的範圍。[0011] [Embodiment 1] (1) An aspect of the support separation device and the support separation method according to the present invention will be described below. [0014] <1. Structure of Support Separator> FIG. 1 is a view showing the structure of a special part of the support separator of the first embodiment, and FIG. 1 (a) is a partial plan view, and FIG. (b) The figure is taken along the arrow AA 'line in Figure 1 (a). In addition, Fig. 1 (a) and Fig. 1 (b) also show the XYZ coordinate system in which the XY plane is a horizontal plane. [0015] The support separation device 10 according to the first embodiment is the same as the prior art. The wafer substrate on which a structure such as a circuit is mounted is in a state of forming a laminate together with the support plate, and is used to peel off and support the laminate. Device. However, the present invention is not limited to a laminated body in which a wafer substrate has been laminated, and it can be used for peeling off the laminated body with respect to the laminated body of all types of laminated boards at the outermost layer. In the following, the wafer substrate will be described only as a substrate. [0016] Here, details are described later, but the laminated body 100 in which the support plate is separated by the support separation device 10 of the first embodiment is as shown in FIG. 1 (b). The substrate 1 and light transmittance The support plate 2 (support) is attached via the adhesive layer 3, and further, a laminated body of the separation layer 4 which is deteriorated by light irradiation is provided between the adhesive layer 3 and the support plate 2. In FIG. 1 (b), the laminated body 100 is adhered to the dicing tape 5 including the dicing frame 6 on the substrate 1 side. [0017] The support separating device 10 according to the first embodiment in which such a laminate 100 is targeted is provided in the form shown in FIG. 1 (b), and includes a platform 50 (mounting table), a light irradiation unit 40, and a lift部 30 、 挂 部 20。 30, the holding portion 20. [0018] (1.1) Platform 50 The platform 50 is a stage on which the laminated body 100 is placed. A porous portion 51 having a porous portion is provided on the upper surface of the platform 50, and a non-illustrated decompression portion is connected to the porous portion 51. Through this, the layered body 100 placed on the platform 50 is fixed on the plane of the substrate 1 side by the porous portion 51. [0019] (1.2) Light Irradiation Unit 40 The light irradiation unit 40 irradiates light through the light-transmitting support plate 2 to the separation layer 4 in the laminate 100. [0020] Specifically, the light irradiating unit 40 scans the laminated body 100 while simultaneously supporting the peripheral portion (area) of the separation layer 4 formed on the laminated body 100 having a circular shape in a plan view through the support plate 2. 4a) The portion is deteriorated by irradiation with light. [0021] Here, the second diagram is a diagram showing a region 4a that has been deteriorated by light irradiation through the light irradiation unit 40 on the separation layer 4 that is circular in plan view. As shown in FIG. 2, the width W1 of the region 4 a is from the outer peripheral end portion of the separation layer 4 toward the inside, and is preferably in a range of 0.5 mm to 8 mm, and more preferably in a range of 1.5 mm to 8 mm. If the width W1 is 6 mm or more, a gap is formed between the substrate 1 and the support plate 2 of the separation layer 4 laminated in the region 4a, and the fluid is ejected from the gap toward the inside of the laminated body 100, which can smoothly pass The laminated body 100 separates the support plate 2. In addition, if the width W1 is 2 mm or less, the area of the region 4a where the light is irradiated on the separation layer 4 can be made smaller, so the area where the substrate 1 is irradiated with light can be made smaller. [0022] In this specification, the term "deterioration" of the separation layer means a state where the separation layer can be broken by a slight external force, or a state where the adhesion force of the layer contacting the separation layer is low. phenomenon. As a result of the deterioration of the separation layer caused by the absorption of light, the separation layer loses its strength or adhesiveness before receiving light irradiation. In short, by absorbing light, the separation layer becomes brittle. The so-called metamorphism of the separation layer may be the decomposition of the separation layer due to the energy of the absorbed light, the change in the spatial arrangement, or the dissociation of the functional groups. The deterioration of the separation layer occurs as a result of absorbing light. [0023] Therefore, for example, the support plate and the substrate can be easily separated by deteriorating the separation layer only by lifting the support plate and destroying the separation layer. More specifically, for example, one of the substrate and the support plate of the laminate is fixed to the mounting table by a support separation device or the like, and is lifted by holding the other by an adsorption pad (holding means) having an adsorption means. Separate the support plate from the substrate, or the chamfered portion of the end portion of the peripheral portion of the support plate is held by a separation plate provided with a clamp (claw) and the like to apply force, and the substrate and the support plate may be separated. In addition, for example, the support plate may be peeled from the substrate of the laminate by a support separation device having a peeling means for supplying a peeling solution for peeling an adhesive. A peeling solution is supplied to at least a part of the peripheral end portion of the adhesive layer of the laminated body by this peeling means, and the adhesive layer of the laminated body is dissolved, so that the adhesive layer can be dissolved in the separation layer to concentrate the force. , Apply force to the base plate and the support plate. Therefore, the substrate and the support plate can be appropriately separated. [0024] Still, the force applied to the laminated body may be appropriately adjusted by the size of the laminated body, etc., and is not limited. For example, if the area is 40,000 to 70,000 mm2 The left and right laminated bodies can appropriately separate the substrate and the support plate by applying a force of about 0.1 to 5 kgf. [0025] If the area 4a of the separation layer 4 is deteriorated by the light irradiation of the light irradiation portion 40, the chamfered portion 2a (Fig. 3 (b)) at the end of the peripheral portion of the support plate 2 is transmitted through the clamp Holding 23, a gap can be formed between the chamfered portion 2a and the region 4a. Preferably, the chamfered portion 2a (FIG. 3 (b)) is lifted by being held by the gripper 23 to form a gap between the chamfered portion 2a and the region 4a. The details will be described later, but this gap can be used as an opportunity to separate the substrate 1 and the support plate 2. [0026] The light system that the light irradiation section 40 irradiates the separation layer 4 may be appropriately selected in accordance with the wavelength absorbed by the separation layer 4. Examples of lasers that emit light irradiating the separation layer 4 include YAG lasers, ruby lasers, glass lasers, and YVOs.4 Solid lasers such as lasers, LD lasers, fiber lasers, liquid lasers such as pigment lasers, CO2 Gas lasers such as lasers, excimer lasers, Ar lasers, He-Ne lasers, lasers such as semiconductor lasers, free electron lasers, or non-laser lasers. The laser system that emits light irradiating the separation layer 4 can be appropriately selected according to the material constituting the separation layer 4, and a laser that can irradiate light of a wavelength that deteriorates the material constituting the separation layer 4 may be selected. [0027] Here, in the substrate 1, an area arranged so as to be opposed to the separation layer 4 in the area 4a is a non-circuit forming area as a structure in which a integrated circuit or the like is not formed. In addition, in the substrate 1, a structure other than a region arranged so as to be opposed to the region 4 a is a structure (circuit formation region) such as an integrated circuit. Therefore, by deteriorating only the separation layer 4 in the region 4 a, it is possible to avoid irradiating light to a region other than the region arranged relative to the region 4 a, that is, to the circuit formation region of the substrate 1. Therefore, the separation layer 4 in the region 4 a can be modified while avoiding irradiating the light with the light irradiating unit 40 in the circuit formation region of the substrate 1 and damage to the circuit formation region of the substrate 1 due to the light. [0028] (1. 3) Lifting section 30 The lifting section 30 is connected to the central portion fixed on the upper surface side of the flat plate portion 21 having a circular shape in a plan view as shown in FIG. 1 (b), and follows the first (a ) And the Z axis shown in FIG. 1 and FIG. 1 (b) to raise and lower the holding portion 20. [0029] In the first embodiment, the lifting portion 30 is connected and fixed to the flat plate portion 21, but the present invention is not limited to this aspect. For example, a floating joint and a stopper may be provided in the lifting portion 30. For example, the floating joint may be disposed at a center portion of the upper surface side of the flat plate portion 21 having a circular shape in a plan view of the holding portion 20. In this case, the flat plate portion 21 is connected to the lifting portion 30 via a floating joint, is rotatable, and the surface provided on the suction pad 22 of the flat plate portion 21 is opposite to the laminate 100 fixed to the platform 50. In the plane, it is movable in an inclined manner. Then, the stopper is provided as a locking means for preventing the flat plate portion 21 from being tilted more than necessary. When the flat plate portion 21 is intended to be tilted more than necessary, the stopper contacts the upper surface portion of the flat plate portion 21 and the flat plate portion 21 is not tilted more than this. (2) With such floating joints and stoppers, the inclination of the flat plate portion 21 can also be adjusted, and the support plate 2 can be configured to be sucked and held by the suction pad 22. [0030] (1. 4) Holding section 20 The holding section 20 includes a flat plate section 21, an adsorption pad 22 (adsorption section), a clamp 23 (holding section), a gas ejection section 24 (ejection section), a slide driving section 25 (driving section), and a level block 26 (abutment portion). [0031] (1. 4. 1) Flat plate portion 21 The flat plate portion 21 is connected to the lifting portion 30. The flat plate portion 21 is a substantially circular structure arranged on the platform 50 in a plan view. For convenience of explanation, the center point C of the flat plate portion 21 is shown in FIG. 1 (a). [0032] (1. 4. 2) Suction pad 22 The adsorption pad 22 is disposed on a surface of the flat plate portion 21 opposite to the platform 50. More specifically, as shown in FIG. 1 (a), the suction pad 22 is held in two places opposite to each other at the center point C of the flat plate portion 21 having a circular shape in a plan view, and along an imaginary line connecting these. Lines and lines that intersect at the center point C in total, 4 locations in the two opposite locations that hold the center point C are each disposed inside (closer to the center point C) than the peripheral end portion of the flat plate portion 21. [0033] The adsorption pad 22 is a region that can be abutted on the opposite side of the region 4a of the surface (also described as the upper surface of the laminated body 100) of the laminated body 100 placed on the platform 50. [0034] The suction pad 22 is capable of holding the support plate 2 by vacuum suction, and examples thereof include a bellows pad. The suction pad 22 is vacuum-adsorbed in the state of abutting the support plate 2 at the above position. For example, the suction pad 22 is moved along the Z axis from the direction away from the platform 50 by the lifting portion 30, and can be lifted and supported. Board 2. [0035] (1. 4. 3) Jig 23 The jig 23 has a structure in which the laminated body 100 mounted on the platform 50 can be held (held) by being connected to the flat plate portion 21 via the slide driving portion 25 near each suction pad 22. [0036] More specifically, as shown in FIG. 1 (a), the jig 23 is connected to two places opposite to each other while being held at the center point C of the flat plate portion 21 having a circular shape in plan view, The imaginary line of the two places and the line orthogonal to the center point C are respectively located outside the peripheral end portion of the flat plate portion 21 (apart from the center point C) at the four places totaling the two places opposing the center point C. side). [0037] Here, in FIG. 1 (a), a line along the X-axis direction and a line along the Y-axis direction corresponding to the imaginary line are shown. In the same place, one suction pad 22 and one jig 23 Departments are on the same line. Then, the clamps 23 of the four places are arranged at equal intervals along the outer periphery of the flat plate portion 21, and therefore, when holding (holding) the laminated body 100 placed on the platform 50, a force can be applied to the laminated body 100 evenly. This is particularly the case where the support plate 2 of the laminate 100 is a thin layer (e.g., 0. In the case of a glass layer (about 4 mm), it is helpful to separate the support plate 2 without breaking it. [0038] The jig 23 is a cross-sectional view shown in FIG. 1 (b) and holds the flat plate portion 21 on both sides. The upper end portion of each clamp 23 is connected to the slide driving portion 25 provided on the upper surface of the flat plate portion 21, and the lower end portion is located lower than the lower surface of the flat plate portion 21 (the arrangement surface of the adsorption pad 22). The slide driving unit 25 is provided with a mechanism for adjusting the height of each jig 23, and the position of each jig 23 can be adjusted along the Z-axis direction. As shown in FIG. 1 (b), when the laminated body 100 is placed on the platform 50 and the holding portion 20 is lowered, the lower end portion of the jig 23 is located near the outer peripheral area of the laminated body 100. 1 (b) is for convenience of explanation. The light irradiating part 40 is between the laminated body 100 and the holding part 20 on the platform 50. However, when the holding part 20 is holding the laminated body 100, it is a light irradiating part. 40 is located away from this position. [0039] The material for forming the jig 23 may be appropriately selected according to the material of the support plate 2 to be held. Therefore, as a material for forming the jig 23, a metal such as stainless steel or aluminum, an engineering plastic, or the like can be used. In addition, when the material of the support plate 2 is glass, it is an engineering plastic and is preferably formed by using aromatic polyether ketone. Among the aromatic polyether ketones, polyether ether ketone (PEEK) having an aromatic group is used. Polyether ketone ketone (PEKK) having an aromatic group and polyether ether ketone ketone (PEEKK) having an aromatic group are preferable, and PEEK is the most preferable. Accordingly, when the outer peripheral end portion of the support plate 2 made of glass is held by the clamp 23, the support plate 2 can be prevented from being damaged. [0040] Hereinafter, the fixture 23 will be described in detail using FIG. 3. Figures 3 (a) to 3 (c) are enlarged cross-sectional views of the space enclosed by a dotted circle in Figure 1 (b). FIG. 3 (a) is a cross-sectional view of the jig 23, and FIG. 3 (b) is a diagram illustrating a state where the inclined surface 23b of the jig 23 abuts on the chamfered portion 2a of the support plate 2 of the laminated body 100. 3 (c) is a view showing a state before the inclined surface 23b is locked at the outer peripheral end portion of the support plate 2 of the laminated body 100 in the arrowed cross section taken along the line BB 'in FIG. 3 (b), and is captured. [0041] As shown in FIG. 3 (a), the jig 23 includes an opposing surface 23a and an inclined surface 23b (locking surface). [0042] The opposite surface 23a is opposed to the outer peripheral end portion of the support plate 2. Here, the opposing surface 23 a is a surface perpendicular to the plane portion of the support plate 2 of the laminated body 100 fixed to the platform 50, and has an arc of the same size as the arc at the outer peripheral end portion of the support plate 2, or That is, a surface that is curved such that a larger arc is drawn than an arc that the outer peripheral end portion has. [0043] The inclined surface 23b is a surface formed at the lower end portion of the jig 23 and along the lower end (bottom edge) of the opposite surface 23a, and faces the center point C of the flat plate portion 21. That is, the inclined surface 23b is inclined with respect to the YZ plane. In other words, in FIG. 1 (b), the inclined surfaces 23b of the jigs 23 that are held on both sides while holding the flat plate portion 21 are inclined downward in a direction in which the distance between them becomes closer as they go downward. As a result, the inclined surface 23b is attached to the outer peripheral end portion of the support plate 2 and abuts on the chamfered portion 2a located on the back side of the surface facing the flat plate portion 21, so that the chamfered portion 2a can be locked. [0044] More specifically, the inclined surface 23b has an inclination within a range of 30 ° or more and less than 90 ° with respect to the XZ plane. Accordingly, the chamfered portion 2a of the support plate 2 can prevent an excessive force from being applied by the inclined surface 23b. In addition, in a state where the lower surface of the level block 26 disposed below the flat plate portion 21 abuts the upper surface of the support plate 2, the inclination of the inclined surface 23 b is relative to the inclination of the chamfered portion 2 a of the support plate 2. It is provided in a parallel manner, and it is most preferable because the excessive force is not concentrated on the end of the chamfered portion 2a during the contact. [0045] The inclined surface 23b is provided along the lower end of the opposite surface 23a of the plurality of jigs 23. The plurality of jigs 23 are in a state in which the lower part of the level block 26 disposed below the flat plate part 21 abuts the upper surface of the support plate 2 and surrounds the outer peripheral end portion of the support plate 2, and each is provided at the inclination of the plurality of jigs 23 The surface 23b approaches the outer peripheral end portion of the support plate 2 at the same speed at the same time by the slide driving portion 25. Therefore, by such inclined surfaces 23b, the laminated body 100 can be induced while the center point C of the support plate 2 of the laminate 100 and the center point C of the flat plate portion 21 overlap, and the outer periphery of the support plate 2 can be locked at the same time End. Therefore, the support separating device 10 can hold the outer peripheral end portion of the support plate 2 in a state where the support plate 2 is brought into close contact with each other by the inclined surfaces 23 b of the plurality of jigs 23 arranged at equal intervals so as to surround the flat plate portion 21. Therefore, the force for holding the support plate 2 can be evenly applied from the inclined surfaces 23 b of the plurality of jigs 23. When the flat plate portion 21 has been lifted, it is possible to appropriately prevent the support plates from abutting the inclined surfaces 23 b of the plurality of jigs 23. 2 The outer peripheral end portion is separated by the inclined surface 23b. [0046] Here, two inclined surfaces 23b are provided in each fixture 23, and these are arranged side by side along the opposite surface 23a as shown in FIG. 3 (c). Each of the inclined surfaces 23b arranged side by side can have a width L of about 5 to 10 mm. However, an arc parallel to the opposite surface 23a is drawn near the end of the support plate 2 on each of the inclined surfaces 23b. [0047] Then, the inclined surface 23b and the inclined surface 23b arranged side by side are separated from each other, and the separated portion is configured as an ejection port 27 (opening) that is a gas ejection portion 24 that ejects gas. Specifically, a groove is formed on the lower end (bottom) of the clamp 23 from the inner side (the flat plate portion 21 side) to the opposite side, and the end on the flat plate portion 21 side of the groove is a separation portion corresponding to the above. . On the opposite side of the groove, that is, on the opposite side of the inside of the clamp 23 (the flat plate portion 21 side), a gas ejection portion 24 is provided, and the nozzle end communicates with the gas to be supplied to the groove. [0048] As described above, by providing the ejection port 27 between the inclined surface 23b and the inclined surface 23b in each of the jigs 23, the gas emitted from the ejection port 27 can be effectively sprayed until the inclined surface 23b abuts against the inverted surface. The corner portion 2a is below the outer peripheral end portion of the support plate 2 lifted. Alternatively, the two inclined surfaces 23b provided in each jig 23 may be used as one inclined surface. In this case, the ejection port 27 may be provided in one of the locking surfaces. [0049] (1. 4. 4) Gas ejection section 24 The gas ejection section 24 integrally constitutes each of the jigs 23. Specifically, as shown in FIG. 1 (a), it is held at two points opposite to the center point C of the flat plate portion 21 having a circular shape in a plan view, and is located at the center point along an imaginary line connecting the two. Lines orthogonal to C are located at a total of 4 places in the two opposite places holding the center point C, and each is located outside the center 23 (away from the center point C). That is, regarding a line along the X-axis direction and a line along the Y-axis direction corresponding to the aforementioned imaginary line shown in FIG. 1 (a), one suction pad 22, one jig 23, One gas ejection portion 24 is located on the same line, and is arranged in this order along a direction away from the center point C. [0050] The gas ejection portion 24 is configured by a gas ejection nozzle, and one end portion is arranged at the lower end portion of the jig 23 and the other end portion is connected to a gas supply device (not shown). [0051] The gas ejection unit 24 is such that the ejection direction of the ejected gas is inclined downward. Specifically, as shown in FIG. 4, the ejection direction of the ejected gas is an inclined angle of 0 to 45 ° with respect to the plane portion (XY plane) of the separation layer 4 (T˚ in FIG. 4). In this way, a gas ejection nozzle is provided. The gap formed by the gas system having this inclination angle is held at the outer peripheral end portion of the support plate 2 so as to be held by the inclined surface 23 b, and is sprayed on the plane of the support plate 2 side of the separation layer 4. This makes it easy to separate the support plate 2 by the separation layer 4. [0052] The gas ejection portions 24 arranged at equal intervals along the outer peripheral end portion of the flat plate portion 21 can independently control the ejection. That is, the gas may not be ejected from a certain gas ejection section 24, and the gas may be ejected from only a specific gas ejection section 24. Still, as the amount of gas sprayed on the plane of the support plate 2 side of the separation layer 4 can be 0. 3 to 0. 5 MPa, set to 100 to 300 L / min. [0053] The gas system ejected from the gas ejection unit 24 does not affect the support plate 2 and the separation layer 4, and may be a type of gas that does not hinder the separation of the support plate 2. Examples include air, dry air, At least one group selected from nitrogen and argon is selected. [0054] As shown in FIG. 3 (b), the lower end of the inclined surface 23b and the lower end of the gas ejection portion 24 are arranged on the same plane as the surface of the support plate 2 on the side opposite to the substrate 1. Thereby, the lower end of the inclined surface 23b and the gas ejection portion 24 can be prevented from being caught on the substrate 1 and the bonding layer 3, and the like. Therefore, the inclined surface 23 b is brought into contact with only the support plate 2, and the support plate 2 can be smoothly held by the jig 23. [0055] Although the gas ejection unit 24 is not shown in the figure, it can also be a moving mechanism that can move up and down along the Z axis direction together with the jig 23 as described above. Thereby, the position from which the gas is ejected toward the inside of the laminated body 100 can be appropriately adjusted from the gas ejection section 24. [0056] (1. 4. 5) Slide driving section 25 The slide driving section 25 is disposed near each of the clamps 23 on the upper surface of the flat plate section 21. Each of the slide driving units 25 slides the gripper 23 located nearby in the direction of the XY plane so as to approach or move away from the outer peripheral end portion of the flat plate portion 21 (Figures 3 (b) and (c)). The slide driving unit 25 slides each clamp 23 toward the outer peripheral end portion of the support plate 2 at the same speed at the same time. Accordingly, the outer peripheral end portion of the support plate 2 can be surrounded and held by the jig 23. [0057] As the sliding driving unit 25, a sliding mechanism using a pneumatic cylinder can be used. An adjuster (not shown) is provided in the sliding drive section 25. By adjusting the drive pressure of the pneumatic cylinder by the adjuster, the holding force of the support plate 2 caused by the clamp 23 can be changed. [0058] As described above, the slide driving unit 25 has a mechanism that moves the jig 23 and the gas ejection unit 24 up and down along the Z-axis direction. [0059] (1. 4. 6) Level block 26 The level block 26 is disposed on the inner side (closer to the center point C) of each adsorption pad 22 below the flat plate portion 21 (the surface on the opposite side of the platform 50) and has a downward protrusion. Structure. As will be described later, the protruding end portion (lower end) of the level block 26 is provided with an abutment surface 26 a that abuts on the upper surface (flat surface portion) of the support plate 2, and can be prevented from being adsorbed on the adsorption pad 22 when the support plate 2 is separated. The support plate 2 is skewed inappropriately. Therefore, the length (protruding length) in the Z direction of the level block 26 is slightly shorter than the length in the Z direction of the suction pad 22. The difference in height between the protruding end (lower end) of the level block 26 and the lower end of the jig 23 is designed in a specific manner in accordance with the thickness of the separated support plate 2. However, since it has a height adjustment mechanism, it can Adjust the height. [0060] The material used to form the level block 26 may be appropriately selected according to the material of the supporting plate 2 in contact, for example, resin (engineering plastic, etc.) may be used. The level block 26 is an engineering plastic, and is preferably formed using an aromatic polyether ketone. Among the aromatic polyether ketones, polyether ether ketone (PEEK) having an aromatic group and polyether ketone having an aromatic group Ketones (PEKK) and polyetheretherketone ketones (PEEKK) having an aromatic group are preferred, and PEEK is most preferred. Thus, for example, when the contact with the upper surface of the support plate 2 made of glass is prevented, the support plate 2 can be prevented from being damaged. In addition, the level block 26 can be reduced in weight, and the load on the lifting portion 30 can be reduced. [0061] (1. 5) Other Structures The support separation device 10 according to the first embodiment includes structures other than the above-mentioned structures. For example, it includes a position sensor (not shown) that detects each position of the jig 23 moved by the slide driving unit 25. [0062] The position sensor is configured by a magnetic sensor, and includes two sensors that are fixed to the clamp 23 and two sensing heads that detect the displacement of the magnet that moves together with the sliding movement of the clamp 23. For example, the two sensor heads use their respective positions as a reference, and the distance between the two sensor heads is calibrated, for example, by a value from 0 to 100. For example, if the distance between the two sensor heads is set to about several mm, the position of the jig 23 can be determined on the order of μm. Based on this calibration value, the two sensing heads determine the position of the magnet. Thereby, the position of the jig 23 which moves the same distance as the magnet at the same time can be accurately determined. More specifically, depending on the range of the calibration value, it is determined whether the jig 23 is disposed at a position before the outer peripheral end portion of the support plate 2 is held, or the jig 23 holds the outer peripheral end portion of the support plate 2 or the jig 23 The outer peripheral end portion of the support plate 2 is damaged. For example, when it can be determined that a value in the range of 0 to 100 indicates a value greater than 60, the clamp 23 is disposed at a position before holding the outer peripheral end portion of the support plate 2 and indicates a value greater than 10 and a value of 60 or less. At this time, the jig 23 is disposed at a position where the outer peripheral end portion of the support plate 2 can be held. When a value of 0 or more and 10 or less is indicated, the jig 23 is disposed at a position where the outer peripheral end portion of the support plate 2 can be held. Say more inside. [0063] The support separation device 10 of the first embodiment further includes a control unit that controls the ejection of the gas from the gas ejection unit 24, controls the elevating unit 30, or the slide driving unit 25. [0064] In the first embodiment, the number of the arrangement of the jig 23 and the gas ejection portion 24 is four locations along the outer periphery of the flat plate portion 21. However, the present invention is not limited to this arrangement number. The supporting plate 2 of the lifting laminate 100 may be held, and the jig 23 may be provided with only one space on the outer periphery of the flat plate portion 21. In the case where they are arranged in a plurality of spaces, these are ideally arranged at regular intervals along the outer periphery of the flat plate portion 21. [0065] In addition, in the first embodiment, two inclined surfaces 23b are provided on each jig, but even when only one inclined surface 23b is provided, the outer peripheral portion of the support plate 2 can be lifted. [0066] < 2. Support separation method> A method of separating the support plate 2 from the laminate 100 using the support separation device 10 having the above configuration (support separation method) will be described. [0067] The method for separating a support body according to the first embodiment includes a gap forming step of fixing a substrate and holding the outer peripheral end portion of the support plate 2 by at least one holding portion to lift the substrate. A gap is formed between the plates 2 and a gap maintaining step is performed by sucking and holding the support plate 2 from the back surface of the surface formed by the gap 7 and maintaining the gap 7 and a separating step is performed after the gap maintaining step. From the gap 7 toward the inside of the laminated body 100, a gas is ejected from a gas ejection portion 24 provided in the jig 23, and the support plate 2 is separated from the laminated body 100. [0068] FIGS. 5 (a) to 5 (e) are diagrams illustrating a method for separating a support according to the first embodiment. It is to be noted that Figs. 5 (a) to 5 (e) are sectional views viewed from the same direction as Fig. 1 (b). 5 (a) to 5 (e) are not shown. [0069] FIG. 5 (a) shows the laminated body 100 as the light irradiation step by forming the region 4a of the outer peripheral end of the separation layer 4 through the light irradiation part 40 shown in FIG. 1 (b). A state in which the porous portion 51 is attracted to the stage 50. In this state, the position of the holding portion 20 is adjusted so that the jig 23 and the gas ejection portion 24 are positioned outside the outer peripheral end portion of the laminated body 100. Still, in this state, the level block 26 is also abutted on the support plate 2, and the suction pad 22 is sucked and held on the support plate 2. [0070] Next, as shown in FIG. 5 (b), the clamp 23 and the gas ejection portion 24 slide to move closer to the laminated body 100 by the slide driving portion 25, and the inclined surface 23b of the clamp 23 is in contact with The lower side (area 4a side) of the chamfered portion 2a of the outer peripheral end portion of the support plate 2. [0071] Then, from the state shown in FIG. 5 (b), the clamp 23 and the gas ejection portion 24 are further slid to move. As shown in FIG. 5 (c), the chamfered portion 2a of the support plate 2 is The inclined surface 23b is lifted from a direction away from the area 4a. In this state, a gap 7 is formed between the region (including the chamfered portion 2a) and the region 4a with respect to the region 4a of the support plate 2 (a gap forming step). In the state shown in FIG. 5 (c), the jig 23 not only slides and moves, but also can form a gap 7 by being slightly raised. [0072] Next, as shown in FIG. 5 (d), the jig 23 and the gas ejection portion 24 slide and move in a direction away from the laminated body 100 in response to the driving by the slide driving portion 25. In this state, even if the inclined surface 23b of the clamp 23 is separated from the chamfered portion 2a of the support plate 2, the chamfered portion 2a of the support plate 2 is maintained in a raised state because the suction pad 22 is continuously adsorbed, and the gap 7 can be maintained. (Gap maintenance step). [0073] Next, as shown in FIG. 5 (e), the flat plate portion 21 is raised, and the positions of the suction pad 22, the jig 23, and the gas ejection portion 24 are raised. Accordingly, the outer peripheral end portion of the support plate 2 adsorbed by the adsorption pad 22 is further lifted. When adjusted to this position, the gas is ejected from the gas ejection unit 24 (separation step). As described above, the gas system ejected from the gas ejection section 24 (the ejection port 27) is ejected in an obliquely downward direction. Therefore, before the gas is ejected, the gas is ejected near the area of the support plate 2 that is in contact with the separation layer 4, and the support plate 2 can be peeled off and separated by the separation layer 4. If separated, the adsorption to the platform 50 of the laminate 100 caused by the porous portion 51 is stopped, and a series of support separation methods are ended. [0074] FIG. 6 is a diagram showing a state where gas is ejected from the gas ejection unit 24 in a plan view of the laminate 100. For convenience of explanation, the configuration of the flat plate portion 21 and the like is not shown. [0075] FIG. 6 shows a state in which the gap 7 is expanded toward the inside of the laminate 100 through the gas ejected from each of the gas ejection sections 24 provided in four places. As shown in FIG. 6, the gaps 7 at the four places along the outer peripheral end portion of the laminate 100 are enlarged, so that the support plate 2 is not taped as compared with the case where the support plate 2 is separated by only the suction pad 22. Excessive stress is applied, and the support plate 2 can be separated by the separation layer 4. This is advantageous in the case where the support plate 2 is thin and structurally brittle, because the support plate 2 is not damaged and can be smoothly separated in a short time, which is very advantageous. [0076] One of the above-mentioned series of operations is realized by the lifting unit 30, the slide driving unit 25, and the gas ejection unit 24 being controlled by a control unit (not shown). [0077] For example, the control unit first lowers the suction pad 22 and the clamp 23 to a specific height by controlling the lifting portion 30, and at the same time turns ON the suction of the porous portion 51 of the platform 50. Next, the control unit controls the slide driving unit 25 to slide the jig 23 toward the inside (or further raise the jig 23) to form a gap. Then, the adsorption by the adsorption pad 22 is started. Next, by controlling the slide driving unit 25, the jig 23 is slid to the outside and moved to a position separated from the chamfered portion 2a of the support plate 2. Next, the control unit controls the gas ejection unit 24 to start the gas ejection in a state where the adsorption by the adsorption pad 22 is continued, and at the same time, controls the lifting unit 30 to raise the adsorption pad 22 to a specific height. [0078] Such processing can be performed according to a timing chart set in advance, or the height of the flat plate portion 21, the position of the clamp 23, or the position of the suction pad 22 can be sensed, and the position can be detected and controlled at the same time. At this time, the aforementioned position sensor can also be used. [0079] < 3. Laminated body> As shown in (a) of FIG. 1, the laminated body 100 of the supporting plate 2 is separated by the supporting body separating device 10 according to the present embodiment and described in detail. The laminated body 100 is formed by laminating a substrate 1, a layer 3, a separation layer 4 that is deteriorated by absorbing light, and a support plate 2 made of a material that transmits light, in this order. [0080] (3. 1) Substrate 1 Substrate 1 is attached to a support plate 2 on which a separation layer 4 is provided via an adhesive layer 3. Then, the substrate 1 is supported by the support plate 2 and can be used for processes such as thinning and mounting. The substrate 1 is not limited to a silicon wafer substrate, and any substrate such as a ceramic substrate, a thin film substrate, or a flexible substrate can be used. [0081] Still, structures such as integrated circuits, metal bumps, etc. can also be mounted on the surface of the substrate. [0082] (3. 2) Support plate 2 The support plate 2 is a support that supports the substrate 1 and is attached to the substrate 1 through an adhesive layer 3. Therefore, when the support plate 2 is used in the process of thinning, transporting, and mounting the substrate 1, it is sufficient to have the necessary strength in order to prevent the substrate 1 from being damaged or deformed. In addition, it is only necessary to pass light for the purpose of allowing the separation layer to deteriorate. From the above viewpoints, examples of the support plate 2 include glass, silicon, and acrylic resin. [0083] Still, the support plate 2 can be used with a thickness of 300 to 1000 μm. According to the method for separating a support body according to this embodiment, even if the support plate 2 (support body) is so thin, the support plate 2 can be prevented from being damaged, and at the same time, it can be appropriately separated from the laminate. [0084] (3. 3) Adhesive layer 3 Adhesive layer 3 is used to attach the substrate 1 and the support plate 2. [0085] As the adhesive for forming the adhesive layer 3, for example, acrylic, phenolic, naphthoquinone, hydrocarbon, polyimide, elastomer, polyfluorene, etc. are generally known in the art. For various adhesives, polyfluorene-based resins, hydrocarbon resins, acrylic-styrene resins, maleimide-based resins, elastomer resins, and the like can be preferably used or a combination thereof. [0086] The thickness of the next layer 3 may be appropriately set according to the type of the substrate 1 and the support plate 2 to be attached, the treatment applied to the substrate 1 after the attachment, and the like, but it is within a range of 10 to 150 μm. Ideally, it is more preferable to be in the range of 15 to 100 μm. [0087] The next layer 3 is used for attaching the substrate 1 and the support plate 2. The adhesive layer 3 can be formed by applying an adhesive by a method such as spin coating, dipping method, roll doctor method, spray coating, slit coating, or the like. The adhesive layer 3 may be formed by, for example, directly applying the adhesive to the substrate 1 instead of applying the adhesive to the substrate 1 in advance, and applying the adhesive to both surfaces of the film (that is, a dry film). [0088] The adhesive layer 3 is a layer formed by an adhesive used to attach the substrate 1 and the support plate 2. [0089] As the adhesive, for example, various adhesives generally known in the art such as acrylic, phenolic, naphthoquinone, hydrocarbon, polyimide, and elastomer can be used. [0090] Hereinafter, the composition of the resin contained in the adhesive layer 3 will be described. [0091] As long as the resin system contained in the adhesive layer 3 has adhesiveness, for example, hydrocarbon resin, acrylic-styrene resin, maleimide resin, elastomer resin, polyfluorene resin, etc. Or combine this and so on. [0092] (Hydrocarbon Resin) A hydrocarbon resin is a resin having a hydrocarbon skeleton and polymerizing a monomer composition. Examples of the hydrocarbon resin include cycloolefin-based polymers (hereinafter referred to as "resin (A)"), and at least one resin selected from the group consisting of terpene resin, rosin-based resin, and petroleum resin ( Hereinafter, it is referred to as "resin (B)") and the like, but is not limited thereto. [0093] The resin (A) may be a resin obtained by polymerizing a monomer component containing a cycloolefin-based monomer. Specifically, Specific examples include ring-opening (co) polymers containing monomer components containing cycloolefin-based monomers, and resins for addition (co) polymerization of monomer components containing cycloolefin-based monomers. Examples of the cycloolefin-based monomer included in the monomer component constituting the resin (A) include, for example, bicyclic compounds such as norbornene, norbornadiene, dicyclopentadiene, and hydroxydicyclopentadiene. Tricyclics, tetracyclic dodecenes and the like, pentacyclics such as cyclopentadiene terpolymers, heptanes and the like of tetracyclopentadiene, or alkyl groups of these polycyclics ( (Methyl, ethyl, propyl, butyl, etc.) substitutes, alkenyl (vinyl, etc.) substitutes, alkylene (ethylene, etc.) substitutes, aryl (phenyl, tolyl, naphthalene) Group, etc.). Among them, norbornene-based monomers selected from the group consisting of norbornene, tetracyclododecene, or these alkyl substituents are preferred. [0095] The monomer component system constituting the resin (A) may also contain other monomers copolymerizable with the above-mentioned cycloolefin-based monomer, and for example, an olefin monomer is preferred. Examples of the olefin monomer system include ethylene. , Propylene, 1-butene, isobutylene, 1-hexene, α-olefin, etc. The olefinic single system may be linear or branched. [0096] In addition, as a unit constituting the resin (A) The composition contains the cycloolefin monomer from the viewpoint of high heat resistance (low thermal decomposition and thermal weight reduction). The proportion of the cycloolefin monomer in the entire monomer component constituting the resin (A) is desirable. It is preferably 5 mole% or more, more preferably 10 mole% or more, and more preferably 20 mole% or more. The proportion of the cyclic olefin monomer in the entire monomer component constituting the resin (A) is not particularly limited, but is determined by solubility The viewpoint of stability over time in the solution is preferably 80 mole% or less, and 70 mole% or less. 。 [0097] In addition, as the monomer component constituting the resin (A), a linear or branched olefin monomer may be contained. The proportion of the olefin monomer to the entire monomer component constituting the resin (A) From the viewpoint of solubility and flexibility, 10 to 90 mole% is preferable, 20 to 85 mole% is more preferable, and 30 to 80 mole% is more preferable. [0098] In addition, the resin (A) is, for example, a cycloolefin type The method of polymerizing a monomer component composed of a monomer and an olefin monomer is a resin having no polar group, and is ideal for suppressing gas generation at a high temperature. [0099] Polymerization when polymerizing monomer components The method, polymerization conditions, and the like are not particularly limited, and may be appropriately set in accordance with a general method. [0100] Examples of commercially available products that can be used as the resin (A) include "TOPAS" manufactured by POLYPLASTICS, "APEL" manufactured by Mitsui Chemicals, "ZEONOR" and "ZEONEX" manufactured by ZEON of Japan, "ARTON" made by JSR Corporation. [0101] The glass transition temperature (Tg) of the resin (A) is preferably 60 ° C or higher, and particularly preferably 70 ° C or higher. If the glass transition temperature of the resin (A) is 60 ° C. or higher, softening of the adhesive layer 3 can be further suppressed when the laminate is exposed to a high-temperature environment. [0102] The resin (B) is a resin selected from the group consisting of terpene-based resins, rosin-based resins, and petroleum resins. Specific examples of the terpene-based resins include terpene resins, terpene phenol resins, modified terpene resins, hydrogenated terpene resins, and hydrogenated terpene phenol resins. Examples of the rosin-based resin system include rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, and modified rosin. Examples of petroleum resins include aliphatic or aromatic petroleum resins, hydrogenated petroleum resins, modified petroleum resins, alicyclic petroleum resins, coumarone · indene petroleum resins, and the like. Among these, hydrogenated terpene resins and hydrogenated petroleum resins are preferred. [0103] The softening point of the resin (B) is not particularly limited, but is preferably 80 to 160 ° C. When the softening point of the resin (B) is 80 to 160 ° C, the laminate can be suppressed from being softened when exposed to a high-temperature environment, and adhesion failure is not caused. [0104] The weight average molecular weight of the resin (B) is not particularly limited, but is preferably 300 to 3,000. When the weight average molecular weight of the resin (B) is 300 or more, the heat resistance is sufficient, and the amount of exhaust gas is reduced in a high-temperature environment. On the other hand, if the weight average molecular weight of the resin (B) is 3,000 or less, the rate of dissolution into the adhesive layer of the hydrocarbon-based solvent is good. Therefore, the residue of the adhesive layer on the substrate after the support is separated can be quickly dissolved and removed. The weight average molecular weight of the resin (B) in the present embodiment means a molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC). [0105] As the resin, a mixed resin (A) and a resin (B) may also be used. The heat resistance is good by mixing. For example, the mixing ratio of the resin (A) and the resin (B) is (A): (B) = 80:20 to 55:45 (mass ratio), and is preferable because it has excellent heat resistance and flexibility in a high-temperature environment. (0106) (Acrylic-Styrenic Resin) As the acrylic-styrene-based resin, for example, a resin polymerized by using styrene or a derivative of styrene and a (meth) acrylate as a monomer is used. [0107] Examples of the (meth) acrylic acid ester system include an alkyl (meth) acrylate having a chain structure, a (meth) acrylate having an aliphatic ring, and a (formaldehyde) having an aromatic ring. Based) acrylate. Examples of the (meth) acrylic acid alkyl esters having a chain structure include acrylic long alkyl esters having an alkyl group having 15 to 20 carbon atoms, and acrylic alkanes having an alkyl group having 1 to 14 carbon atoms. Esters and the like. Examples of the acrylic long alkyl esters include n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, An alkyl ester of acrylic acid or methacrylic acid such as n-icosyl. The alkyl group may be branched. [0108] Examples of the acrylic alkyl esters having an alkyl group having 1 to 14 carbon atoms include commonly known acrylic alkyl esters used in acrylic adhesives that are currently available. Examples of the alkyl group include methyl, ethyl, propyl, butyl, 2-ethylhexyl, isooctyl, isononyl, isodecyl, dodecyl, lauryl, and tridecyl Alkyl esters of acrylic acid or methacrylic acid. [0109] Examples of the (meth) acrylate having an aliphatic ring include cyclohexyl (meth) acrylate, cyclopentyl (meth) acrylate, 1-adamantyl (meth) acrylate, Norbornyl (meth) acrylate, isofluorenyl (meth) acrylate, tricyclodecyl (meth) acrylate, tetracyclododecyl (meth) acrylate, dicyclopentyl (methyl Group) acrylate, etc., but isofluorenyl methacrylate and dicyclopentyl (meth) acrylate are preferred. [0110] The (meth) acrylate system having an aromatic ring is not particularly limited, but examples of the aromatic ring system include a phenyl group, a benzyl group, a tolyl group, a stub group, a biphenyl group, a naphthyl group, and an anthracene. Group, phenoxymethyl, phenoxyethyl and the like. The aromatic ring system may have a linear or branched alkyl group having 1 to 5 carbon atoms. Specifically, a phenoxyethyl acrylate is preferable. (Malaysium imine-based resin) As the maleimide-imide-based resin, for example, as a monomer, N-methylmaleimide, N-ethylmaleimide, Nn -Propylmaleimide, N-isopropylmaleimide, Nn-butylmaleimide, N-isobutylmaleimide, N-sec-butylmaleimide Imine, N-third butylmaleimide, Nn-pentylmaleimide, Nn-hexylmaleimide, Nn-heptylmaleimide, Nn-octylmaleimide N-imide, N-lauryl maleimide, N-stearyl maleimide and other maleimide having alkyl groups, N-cyclopropyl maleimide, N- Cyclobutylmaleimide, N-cyclopentylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide Maleimide having an aliphatic hydrocarbon group such as amine, N-phenylmaleimide, Nm-methylphenylmaleimide, No-methylphenylmaleimide, Np- A resin obtained by polymerizing an aromatic maleimide having an aryl group such as methylphenylmaleimide. [0112] For example, a cycloolefin copolymer of a copolymer having a repeating unit represented by the following chemical formula (1) and a repeating unit represented by the following chemical formula (2) can be used as a resin for the connection component.(In the chemical formula (2), n is an integer of 0 or 1 to 3.) As such a cycloolefin copolymer system, APL 8008T, APL 8009T, and APL 6013T (all manufactured by Mitsui Chemicals) can be used. [0113] (Elastomer) It is ideal that the elastic system contains a styrene unit as a constituent unit of the main chain, and the "styrene unit" may have a substituent. Examples of the substituent group include an alkyl group having 1 to 5 carbons, an alkoxy group having 1 to 5 carbons, an alkoxyalkyl group having 1 to 5 carbons, ethoxyl, carboxyl, and the like. The content of the styrene unit is preferably within a range from 14% by weight to 50% by weight. Furthermore, it is preferable that the weight average molecular weight of an elastic system is the range of 10,000 or more and 200,000 or less. [0114] If the content of the styrene unit is in the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, it is easily dissolved in a hydrocarbon system described later. Solvent, so the adhesive layer can be removed easily and quickly. In addition, when the content of the styrene unit and the weight average molecular weight are within the above-mentioned ranges, the wafer is a resist solvent (for example, PGMEA, PGME, etc.) and an acid (hydrofluoric acid) exposed during the resist lithography step. Etc.) and alkali (TMAH, etc.) exhibit excellent resistance. [0115] The (meth) acrylic acid ester may be further mixed with the elastomer. [0116] The content of the styrene unit is preferably 17% by weight or more, and more preferably 40% by weight or less. [0117] The more preferable range of the weight average molecular weight is 20,000 or more, and the more preferable range is 150,000 or less. [0118] As the elastic system, if the content of the styrene unit is in the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, various kinds of materials can be used. Elastomer. Examples include polystyrene-poly (ethylene / propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), and styrene-butadiene-styrene Block copolymers (SBS), styrene-butadiene-butene-styrene block copolymers (SBBS), and, among others, hydrides, styrene-ethylene-butene-styrene block copolymers (SEBS), styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene-propylene-styrene block Copolymer (SEEPS), styrene block is a styrene-ethylene-ethylene-propylene-styrene block copolymer (SeptonV9461 (made by Kuraray), SeptonV9475 (made by Kuraray)), a styrene block copolymer Segments are reactive cross-linked styrene-ethylene-butene-styrene block copolymers (Septon V9827 (reactive polystyrene-based hard block) produced by Kuraray), polystyrene-poly (ethylene- Ethylene / propylene) block-polystyrene block copolymer (SEEPS-OH: terminal hydroxyl group modification) and the like. As the content of the styrene unit and the weight average molecular weight of the elastomer, those within the above ranges can be used. [0119] In addition, hydrides are also preferred in elastomers. In the case of a hydride, stability to heat is improved, and deterioration such as decomposition or polymerization is unlikely to occur. Further, from the viewpoint of solubility in a hydrocarbon-based solvent and resistance to a resistive solvent, it is also preferable. [0120] In addition, a block polymer having styrene at both ends in the elastomer is also preferable. Since styrene having high thermal stability is blocked at both ends, it exhibits higher heat resistance. 012 [0121] More specifically, the hydride of a block copolymer of an elastic system styrene and a conjugated diene is preferable. The stability to heat is improved, and it is difficult to cause degradation such as decomposition or polymerization. In addition, a styrene block having high thermal stability is provided at both ends to exhibit higher heat resistance. Furthermore, from the viewpoint of solubility in a hydrocarbon-based solvent and resistance to a resistive solvent, it is also preferable. [0122] Examples of commercially available products used as the elastomer included in the adhesive constituting the adhesive layer 3 include "Septon (trade name)" manufactured by Kuraray, "HYBRAR (trade name)" manufactured by Kuraray, and Asahi Kasei "Tuftec (trade name)" made by the company, "DYNARON (trade name)" made by the JSR company, etc. The content of the elastomer included in the adhesive constituting the adhesive layer 3 is, for example, 100 parts by weight of the entire amount of the adhesive composition, preferably 50 to 99 parts by weight, and 60 weight. It is more preferable to be in a range of not less than 99 parts by weight, and most preferably to be in the range of not less than 70 parts by weight and not more than 95 parts by weight. By setting it as such a range, a wafer and a support can be bonded suitably while maintaining heat resistance. [0124] In addition, plural types of elastomers may be mixed. In short, the adhesive constituting the adhesive layer 3 may contain a plurality of types of elastomers. At least one of the plurality of types of elastomers may include a styrene unit as a constituent unit of the main chain. In addition, at least one of the plurality of types of elastomers is such that the content of styrene units is in the range of 14% by weight or more and 50% by weight or the weight average molecular weight is in the range of 10,000 or more and 200,000 or less. It is within the scope of the present invention. In addition, in the case where the adhesive constituting the adhesive layer 3 contains a plurality of types of elastomers, they may be mixed, and the content of the styrene unit may be adjusted so as to fall within the above range. For example, if the content of styrene units is 30% by weight of Sepon 4033 manufactured by Kuraray Corporation, and the content of Septon 2063 by 13% by weight of styrene units is Septon 2063 in a weight ratio of 1: 1 When mixed, the styrene content of the entire elastomer contained in the adhesive is 21 to 22% by weight, and thus 14% by weight or more. In addition, for example, when the styrene unit is 10% by weight and 60% by weight is mixed with a weight ratio of 1: 1, the ratio becomes 35% by weight, which is within the above range. The present invention may also have such a form. In addition, all of the plural kinds of elastic systems included in the adhesive constituting the adhesive layer 3 contain a styrene unit within the above-mentioned range, and the weight average molecular weight within the above-mentioned range is most preferable. [0125] It is preferable to form the adhesive layer 3 using a resin other than a photocurable resin (for example, a UV curable resin). By using a resin other than the photocurable resin, it is possible to prevent residues from being left around the minute unevenness of the substrate 1 after the adhesive layer 3 is peeled off or removed. In particular, it is preferable that the adhesive system constituting the adhesive layer 3 is not dissolved in all solvents, but is dissolved in a specific solvent. This is because a physical force is not applied to the substrate 1, but it can be removed by dissolving the adhesive layer 3 in a solvent. When the adhesive layer 3 is removed, even if the substrate 1 has a low strength, the adhesive layer 3 can be easily removed without breaking or deforming the substrate 1. [0126] (Polyfluorene-based resin) The adhesive used to form the adhesive layer 3 may also contain a polyfluorene-based resin. By forming the adhesive layer 3 with a polyfluorene-based resin, it is possible to produce a laminate in which the adhesive layer can be dissolved in a later step and the support plate can be peeled off from the substrate even if the laminate is processed at a high temperature. If the adhesive layer 3 contains a polyfluorene resin, for example, the laminate can be suitably used even in a high-temperature process in which the laminate is subjected to a high temperature of 300 ° C. or higher by annealing or the like. [0127] The polyfluorene-based resin has a structure constituted by at least one constituent unit among the constituent units represented by the following general formula (3) and the general unit (4). .(Here, R of the general formula (3)1 , R2 And R3 And R in the general formula (4)1 And R2 They are each independently selected from the group consisting of phenylene, naphthyl and anthracenyl, and X 'is an alkylene having 1 to 3 carbon atoms. ) The poly (fluorene) resin is a laminated body having at least one of a polyfluorene constituent unit represented by the formula (3) and a polyether fluorene constituent unit represented by the formula (4). After the substrate 1 and the support plate 2 are processed, even if the substrate 1 is processed under high temperature conditions, it is possible to prevent the adhesive layer 3 from becoming insoluble due to decomposition and polymerization. In addition, if the polyfluorene-based resin is a polyfluorene resin composed of a polyfluorene constituent unit represented by the above formula (3), it is stable even when heated to a higher temperature. Therefore, it is possible to prevent the residue caused by the adhesion layer from being generated on the substrate 1 after cleaning. [0128] The weight average molecular weight (Mw) of the polyfluorene resin is preferably in the range of 30,000 to 70,000, and more preferably in the range of 30,000 to 50,000. If the weight average molecular weight (Mw) of the polyfluorene resin is in the range of 30,000 or more, for example, an adhesive composition that can be used at a high temperature of 300 ° C or more can be obtained. In addition, if the weight average molecular weight (Mw) of the polyfluorene resin is in the range of 70,000 or less, it can be appropriately dissolved depending on the solvent. That is, an adhesive composition which can be appropriately removed by a solvent can be obtained. (Diluent solvent) (i) Examples of the diluent solvent used when forming the adhesive layer 3 include hexane, heptane, octane, nonane, isononane, methyloctane, decane, undecane, Dodecane, tridecane, etc. linear hydrocarbons, branched hydrocarbons with 4 to 15 carbons, for example, cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene, tetrahydronaphthalene And other cyclic hydrocarbons, p-menthane, o-menthane, m-menthane, diphenylmenthane, 1,4-terpenediol, 1,8-terpenediol, pinane, norbornane, pinane, Thujane, pinane, longifolene, geraniol, nerol, linalool, citral, citronellol, menthol, isomenthol, neomenthol, alpha-terpineol, beta-terpineol Alcohol, γ-terpineol, terpinen-1-ol, terpinen-4-ol, dihydroterpineol acetate, 1,4-eucalyptol, 1,8-eucalyptol, 莰Terpenes based solvents such as alcohol, carvone, ionone, thujone, camphor, d-limonene, l-limonene, dipentene, etc .; lactones such as γ-butyrolactone; acetone, methyl ethyl Ketone, cyclohexanone (CH), methyl-n-pentyl ketone, methyl isoamyl ketone, 2-heptanone, etc. Ketones; Polyvalent alcohols such as ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol; ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol mono Monomethyl ethers, monoethyl ethers, monopropyl ethers, monobutyl ethers, etc. of compounds having an ester bond such as acetate, monomethyl ethers, monoethyl ethers, monopropyl ethers, or monobutyl ethers of the compounds having the aforementioned polyvalent alcohols or the aforementioned ester bonds Derivatives of polyvalent alcohols such as compounds having an ether bond, such as monophenyl ether (preferably propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME)) ; Cyclic ethers like dioxane, or methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, butyl methoxyacetate, methyl pyruvate, pyruvate Ester of ethyl ester, methyl methoxypropionate, ethyl ethoxypropionate, etc .; anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, Aromatic organic solvents such as phenyl ether and butylphenyl ether. [0130] (Other components) 的 The adhesive constituting the adhesive layer 3 is in a range that does not impair essential characteristics, and may further include other substances that are miscible. For example, various additives conventionally used such as additional resins, plasticizers, adhesives, stabilizers, colorants, thermal polymerization inhibitors, and surfactants to improve the performance of the adhesive can be used. [0131] (3.4) Separation Layer 4 Next, the separation layer 4 is a layer formed of a material that is deteriorated by absorbing light irradiated through the support plate 2. As shown in FIG. 5 (e), when a fluid is sprayed into the laminate 100 from a gap provided between the substrate 1 and the support plate 2, the separation layer 4 in a region other than the region 4a is also destroyed. [0132] The thickness of the separation layer 4 is, for example, preferably in a range of 0.05 μm or more and 50 μm or less, and more preferably in a range of 0.3 μm or more and 1 μm or less. If the thickness of the separation layer 4 is in a range of 0.05 μm or more and 50 μm or less, the short-term light irradiation and low-energy light irradiation can cause the separation layer 4 to have desired deterioration. The thickness of the separation layer 4 is particularly desirable from the viewpoint of productivity, and it is included in a range of 1 μm or less. [0133] In the laminate 100, another layer may be formed between the separation layer 4 and the support plate 2. In this case, the other layers may be made of a material that transmits light. This makes it possible to appropriately add a layer having desired properties and the like to the laminated body 100 without impeding the incidence of light into the separation layer 4. The wavelength of light that can be used differs depending on the type of material constituting the separation layer 4. Therefore, the material constituting the other layers does not need to transmit all the light, and the material constituting the separation layer 4 can be appropriately selected from a material having a wavelength at which light is deteriorated. [0134] The separation layer 4 is preferably formed only of a material having a structure that absorbs light, but may be formed by adding a material that does not have a structure that absorbs light within a range that does not impair the essential characteristics of the present invention. Separation layer 4. In addition, it is desirable that the side of the separation layer 4 facing the adhesion layer 3 is flat (unevenness is not formed), so that the formation of the separation layer 4 can be easily performed, and it can be evenly attached during the attachment. . [0135] (Fluorocarbon) The rhenium separation layer 4 may be made of fluorocarbon. The separation layer 4 is made of fluorocarbon, and absorbs light to cause deterioration. As a result, the separation layer 4 loses its strength or adhesiveness before receiving light. Therefore, by applying a slight external force (for example, lifting the support plate 2 and the like), the separation layer 4 can be broken, and the support plate 2 and the substrate 1 can be easily separated. The fluorocarbon system constituting the separation layer 4 can be appropriately formed by a plasma CVD (chemical vapor deposition) method. [0136] Fluorocarbon absorbs light having a wavelength in a specific range depending on the type. By irradiating the separation layer with light having a wavelength in a range in which the fluorocarbon is absorbed by the separation layer 4, the fluorocarbon can be appropriately modified. The light absorption rate in the separation layer 4 is preferably 80% or more. [0137] The light irradiated to the separation layer 4 conforms to a wavelength that can be absorbed by fluorocarbon. For example, a YAG laser, a ruby laser, a glass laser, and YVO are suitably used.4 Solid lasers such as lasers, LD lasers, fiber lasers, liquid lasers such as pigment lasers, CO2 Gas lasers such as lasers, excimer lasers, Ar lasers, He-Ne lasers, lasers such as semiconductor lasers, free electron lasers, or non-laser lasers are sufficient. The wavelength range in which the fluorocarbon can be modified is not limited here. For example, a wavelength range of 600 nm or less can be used. [0138] (Polymer containing a structure having light absorption in the repeating unit) The separation layer 4 may contain a polymer containing a structure having light absorption in the repeating unit. This polymer is deteriorated by irradiation with light. The deterioration of the polymer is generated by absorbing and irradiating the light having the above structure. As a result of the deterioration of the polymer, the separation layer 4 loses its strength or adhesiveness before receiving light irradiation. Therefore, by applying a slight external force (for example, lifting the support plate 2 and the like), the separation layer 4 can be broken, and the support plate 2 and the substrate 1 can be easily separated. [0139] The above-mentioned structure having light absorption is a chemical structure that absorbs light and deteriorates a polymer containing the structure as a repeating unit. This structural system contains, for example, an atomic group of a conjugated π-electron system composed of a substituted or unsubstituted benzene, a condensed ring, or a heterocyclic ring. More specifically, the structure may be a cardo structure, or a diphenyl ketone structure, a diphenylfluorene structure, a diphenylfluorene structure (bisphenylfluorene structure), Diphenyl structure or diphenylamine structure. [0140] When the above-mentioned structure is present in the side chain of the polymer, the structure can be represented by the following formula.(Wherein R is an independent alkyl, aryl, halogen, hydroxyl, keto, fluorenylene, sulfo or N (R4 ) (R5 ) (Here, R4 And R5 Are independent hydrogen atoms or 1 to 5 carbon atoms), Z is absent or -CO-, -SO2 -, -SO- or -NH-, n is an integer of 0 or 1 to 5. ) In addition, the polymer is contained in the following formula, for example, a repeating unit represented by any of (a) to (d), or (e), or a structure of (f) is included in the main unit. chain.(In the formula, l is an integer of 1 or more, m is an integer of 0 or 1 to 2, and X is any one of the formulas shown in (a) to (e) above "Chemical 3", Either one of the formulas shown in "Chemical 3" above, or does not exist, Y1 And Y2 Independent -CO- or SO2 -. l is preferably an integer of 10 or less. ) As examples of the benzene ring, condensed ring, and heterocyclic ring represented by the above-mentioned "Chemical 3", phenyl, substituted phenyl, benzyl, substituted benzyl, naphthalene, substituted naphthalene, anthracene, substituted anthracene, and anthracene Quinone, substituted anthraquinone, acridine, substituted acridine, azobenzene, substituted azobenzene, fluoramine, substituted fluoramine, fluorone, substituted fluorone, carbazole, substituted carbazole, N-alkane Carbazole, dibenzofuran, substituted dibenzofuran, phenanthrene, substituted phenanthrene, fluorene, and substituted fluorene. In the case where the exemplified substituents have more substituents, the substituents are, for example, alkyl, aryl, halogen atom, alkoxy, nitro, aldehyde, cyano, amidine, and dialkylamino groups. , Sulfonamide, amidine, carboxylic acid, carboxylic acid ester, sulfonic acid, sulfonic acid ester, alkylamine and arylamine. [0141] Among the substituents represented by "Chemical 3" above, the fifth substituent having two phenyl groups is Z as -SO2 Examples of the case of-include bis (2,4-dihydroxyphenyl) fluorene, bis (3,4-dihydroxyphenyl) fluorene, bis (3,5-dihydroxyphenyl) fluorene, and bis ( 3,6-dihydroxyphenyl) fluorene, bis (4-hydroxyphenyl) fluorene, bis (3-hydroxyphenyl) fluorene, bis (2-hydroxyphenyl) fluorene, and bis (3,5-dimethylformamide) 4-hydroxyphenyl) fluorene and the like. [0142] Among the substituents represented by the above “Chemical Formula 3”, the fifth substituent having two phenyl groups is exemplified in the case where Z is —SO—. Dihydroxyphenyl) fluorene, bis (5-chloro-2,3-dihydroxyphenyl) fluorene, bis (2,4-dihydroxyphenyl) fluorene, bis (2,4-dihydroxy-6) -Methylphenyl) fluorene, bis (5-chloro-2,4-dihydroxyphenyl) fluorene, bis (2,5-dihydroxyphenyl) fluorene, bis (3,4-dihydroxybenzene) Yl) fluorene, bis (3,5-dihydroxyphenyl) fluorene, bis (2,3,4-trihydroxyphenyl) fluorene, bis (2,3,4-trihydroxy-6-methyl) Phenyl) fluorene, bis (5-chloro-2,3,4-trihydroxyphenyl) fluorene, bis (2,4,6-trihydroxyphenyl) fluorene, bis (5-chloro-2, 4,6-trihydroxyphenyl) fluorene and the like. [0143] Among the substituents represented by the above-mentioned “Chem. 3”, the fifth substituent having two phenyl groups is exemplified in the case where Z is -C (= O)-, 4-dihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,2 ', 4,4'-tetrahydroxybenzophenone, 2,2', 5,6'-tetrakis Hydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-octyloxybenzophenone, 2-hydroxy-4-dodecylbenzophenone, 2 2,2'-dihydroxy-4-methoxybenzophenone, 2,6-dihydroxy-4-methoxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxy Benzophenone, 4-amino-2'-hydroxybenzophenone, 4-dimethylamino-2'-hydroxybenzophenone, 4-diethylamino-2'-hydroxydione Benzophenone, 4-dimethylamino-4'-methoxy-2'-hydroxybenzophenone, 4-dimethylamino-2 ', 4'-dihydroxybenzophenone, and 4-dimethylamino-3 ', 4'-dihydroxybenzophenone and the like. [0144] When the structure is present in the side chain of the polymer, the proportion of the polymer containing repeating units including the structure is such that the light transmittance of the separation layer 4 is 0.001% to 10% In the range. When the polymer is prepared such that the ratio is included in such a range, the separation layer 4 can absorb light sufficiently and can be surely and rapidly deteriorated. That is, removal of the support plate 2 of the laminated body 100 is easy, and the irradiation time of the light necessary for this removal can be shortened. [0145] The above structure is capable of absorbing light having a wavelength in a desired range by selection of the kind. For example, the wavelength of the light that can be absorbed by the above structure is preferably in a range of 100 nm to 2,000 nm. Within this range, the wavelength of light that can be absorbed by the structure is on the shorter wavelength side, and is, for example, within a range of 100 nm or more and 500 nm or less. For example, it is desirable that the structure described above is capable of deteriorating a polymer containing the structure by absorbing ultraviolet light having a wavelength in a range of approximately 300 nm to 370 nm. [0146] The light system capable of absorbing the above structure is, for example, a high-pressure mercury lamp (wavelength: 254 nm or more and 436 nm or less), KrF excimer laser (wavelength: 248 nm), ArF excimer laser (wavelength: 193 nm), F2 excimer laser (Wavelength: 157nm), XeCl laser (wavelength: 308nm), XeF laser (wavelength: 351nm) or solid UV laser (wavelength: 355nm), or g-line (wavelength: 436nm), h-line (Wavelength: 405 nm) or i-line (wavelength: 365 nm). [0147] The separation layer 4 described above contains a polymer containing the above-mentioned structure as a repeating unit. However, the separation layer 4 further includes a component other than the polymer described above. Examples of the component system include a filler, a plasticizer, and a component capable of improving the peelability of the support plate 2. These components may be appropriately selected from previously generally known substances or materials that do not hinder or promote the absorption of light according to the above-mentioned structure and the deterioration of the polymer. (0148) (Inorganic matter) The rhenium separation layer 4 may be made of an inorganic matter. The separation layer 4 is made of an inorganic substance, and deteriorates by absorbing light. As a result, the strength or adhesiveness before receiving light is lost. Therefore, by applying a slight external force (for example, lifting the support plate 2 and the like), the separation layer 4 can be broken, and the support plate 2 and the substrate 1 can be easily separated. [0149] The inorganic substance may have a structure that is deteriorated by absorbing light. For example, one or more inorganic substances selected from the group consisting of a metal, a metal compound, and carbon may be suitably used. The metal compound refers to a compound containing a metal atom, and may be, for example, a metal oxide or a metal nitride. Examples of such inorganic substances are not limited thereto, and examples thereof include gold, silver, copper, iron, nickel, aluminum, titanium, chromium, and SiO.2 , SiN, Si3 N4 In the group consisting of Ti, TiN and carbon, one or more inorganic substances are selected. However, the so-called carbon system may also include the concept of allotrope of carbon, for example, diamond, fullerene, diamond-like carbon, nano carbon tube, and the like. [0150] The inorganic substance absorbs light having a wavelength in a specific range depending on the type. By irradiating the separation layer with light having a wavelength in a range in which the inorganic substance used in the separation layer 4 absorbs, the inorganic substance can be appropriately deteriorated. [0151] As a light system irradiating the separation layer 4 made of an inorganic substance, in accordance with the wavelength that the inorganic substance can absorb, for example, a YAG laser, a ruby laser, a glass laser, and YVO are suitably used.4 Solid lasers such as lasers, LD lasers, fiber lasers, liquid lasers such as pigment lasers, CO2 Gas lasers such as lasers, excimer lasers, Ar lasers, He-Ne lasers, lasers such as semiconductor lasers, free electron lasers, or non-laser lasers are sufficient. [0152] The separation layer 4 made of an inorganic substance can be formed on the support plate 2 by a generally known technique such as sputtering, chemical vapor deposition (CVD), plating, plasma CVD, and spin coating. The thickness of the separation layer 4 made of an inorganic substance is not particularly limited, and may be a film thickness that can sufficiently absorb the light used, and for example, a film thickness in the range of 0.05 μm to 10 μm is preferable. In addition, an adhesive may be applied in advance to both surfaces or one surface of an inorganic film (for example, a metal film) composed of an inorganic substance constituting the separation layer 4 and attached to the support plate 2 and the substrate 1. [0153] In the case where a metal film is used as the separation layer 4, the conditions such as the film quality of the separation layer 4, the type of laser light source, and the laser output are such that laser reflection can be generated or charged to the film. Therefore, it is desirable to provide an anti-reflection film or an anti-charge film on or under the separation layer 4 or any of them, and it is desirable to take such measures. [0154] (Compound having structure with infrared absorption property) The separation layer 4 can also be formed from a compound having structure with infrared absorption property. This compound deteriorates by absorbing infrared rays. The separation layer 4 is a result of deterioration of the compound, and loses its strength or adhesiveness before receiving infrared radiation. Therefore, by applying a slight external force (for example, lifting a support, etc.), the separation layer 4 can be broken, and the support plate 2 and the substrate 1 can be easily separated. The compound system having a structure having infrared absorption or containing a structure having infrared absorption can be, for example, an alkane, an olefin (vinyl, trans, cis, vinylidene, tri-substituted, tetra-substituted, conjugated) , Accumulated polyenes, cyclic), alkynes (mono-, di-substituted), monocyclic aromatics (benzene, mono-, di-, tri-substituted), alcohols and phenols (OH radicals, intramolecular hydrogen bonding) , Intermolecular hydrogen bonding, saturated second order, saturated third order, unsaturated second order, unsaturated third order), acetal, ketal, aliphatic ether, aromatic ether, vinyl ether, ethylene oxide Alkanes, peroxide ethers, ketones, dialkylcarbonyls, aromatic carbonyls, enols of 1,3-diketones, o-hydroxyaryl ketones, dialkylaldehydes, aromatic aldehydes, carboxylic acids (dimerization Compound, carboxylic acid anion), formate, acetate, conjugated ester, non-conjugated ester, aromatic ester, lactone (β-, γ-, δ-), aliphatic acid chloride, aromatic acid Chloride, acid anhydride (conjugated, non-conjugated, cyclic, acyclic), primary ammonium amine, secondary ammonium amine, lactamamine, primary amine (aliphatic, aromatic), diamine Primary amine (aliphatic, aromatic), tertiary amine (aliphatic, aromatic), primary amine salt, secondary amine salt, tertiary amine salt, ammonium ion, aliphatic nitrile, aromatic nitrile, carbodiarylene Amines, aliphatic isonitriles, aromatic isonitriles, isocyanates, thiocyanates, aliphatic thiocyanates, aromatic thiocyanates, aliphatic nitrates, aromatic nitrates, nitramines, nitrosamines, Nitrates, nitrites, nitroso bonds (aliphatic, aromatic, monomer, dimer), sulfur compounds such as thiols, thiophenols, and sulfuric acid, thiocarbonyl, sulfenyl, sulfonium, sulfonium chloride, Primary sulfonamide, secondary sulfonamide, sulfate, carbon-halogen bond, Si-A1 Key (A1 (H, C, O or halogen), P-A2 Key (A2 H, C or O), or Ti-O bond. [0156] Examples of the structural system containing the carbon-halogen bond include -CH.2 Cl, -CH2 Br, -CH2 I, -CF2 -, -CF3 , -CH = CF2 , -CF = CF2 , Fluorinated aryl, and chlorinated aryl. [0157] As containing Si-A1 Examples of the bond structure include SiH and SiH2 SiH3 , Si-CH3 , Si-CH2 -, Si-C6 H5 , SiO-aliphatic, Si-OCH3 , Si-OCH2 CH3 Si-OC6 H5 , Si-O-Si, Si-OH, SiF, SiF2 And SiF3 Wait. As containing Si-A1 The structure of the bond is particularly preferably a siloxane skeleton and a silsesquioxane skeleton. [0158] As containing the above-mentioned P-A2 Examples of the bond structure include PH, PH2 , P-CH3 , P-CH2 -, P-C6 H5 , A3 3 -P-O (A3 Aliphatic or aromatic), (A4 O)3 -P-O (A4 System alkyl), P-OCH3 , P-OCH2 CH3 , P-OC6 H5 , P-O-P, P-OH and O = P-OH. [0159] The above structure is capable of absorbing infrared rays having a wavelength in a desired range by selection of the type. Specifically, the wavelengths of the infrared rays whose structure is absorbable are, for example, in a range of 1 μm or more and 20 μm or less, and can be appropriately absorbed in a range of 2 μm or more and 15 μm or less. Furthermore, when the structure is a Si-O bond, a Si-C bond, and a Ti-O bond, the range may be 9 μm or more and 11 μm or less. However, the wavelengths of infrared rays that can be absorbed by each structure can be easily understood by those skilled in the art. For example, for the absorption bands in each structure, refer to the non-patent literature: SILVERSTEIN, BASSLER, MORRILL, "A Spectral Identification Method for Organic Compounds (5th Edition)-Combination of MS, IR, NMR, and UV" (1992) (Published annually) on pages 146 to 151. [0160] As a compound used for the formation of the separation layer 4, a compound having an infrared-absorbing structure is among the compounds having the structure described above. If it is soluble in a solvent for coating, it can be cured to form a solid layer. , It is not particularly limited. However, in order to effectively deteriorate the compound in the separation layer 4 and to easily separate the support plate 2 from the substrate 1, it is desirable that the infrared absorption in the separation layer 4 is large, that is, the infrared radiation in the separation layer 4 is irradiated with infrared rays. Low transmittance. Specifically, the infrared transmittance of the separation layer 4 is preferably less than 90%, and the infrared transmittance is preferably less than 80%. [0161] As an example, as a compound system having a siloxane skeleton, for example, a copolymer of a repeating unit represented by the following chemical formula (5) and a copolymer of a repeating unit represented by the following chemical formula (6) can be used. Resin or a copolymer of a repeating unit represented by the following chemical formula (5) and a copolymer derived from an acrylic compound-based repeating unit.(In formula (6), R6 It is hydrogen, an alkyl group having 10 or less carbon, or an alkoxy group having 10 or less carbon. ) Among them, t-butylstyrene (TBST) -di, which is a copolymer of a compound having a siloxane skeleton with a repeating unit represented by the aforementioned chemical formula (5) and a repeating unit represented by the following chemical formula (7) A methylsiloxane copolymer is preferable, and the repeating unit represented by the above formula (5) and the repeating unit represented by the following chemical formula (7) are contained in 1: 1, and TBST-dimethylsiloxane is copolymerized. More ideal.As the compound having a silsesquioxane skeleton, for example, a resin of a copolymer of a repeating unit represented by the following chemical formula (8) and a repeating unit represented by the following chemical formula (9) can be used.(In formula (8), R7 Is hydrogen or an alkyl group having 1 to 10 carbon atoms, and in formula (9), R8 Alkyl or phenyl having 1 to 10 carbon atoms. ) As a compound having a silsesquioxane skeleton, it can also be suitably used in Japanese Patent Laid-Open No. 2007-258663 (published on October 4, 2007) and Japanese Patent Laid-Open No. 2010-120901 (2010 Published on June 3), Japanese Patent Laid-Open Publication No. 2009-263316 (published on November 12, 2009), and Japanese Patent Laid-Open Publication No. 2009-263596 (published on November 12, 2009) Siloxane resin. [0162] Among them, a compound having a silsesquioxane skeleton is preferably a copolymer represented by the following chemical formula (10) and a repeating unit represented by the following chemical formula (11), and will be represented by the following chemical formula The repeating unit represented by (10) and the copolymer containing the repeating unit represented by the following chemical formula (11) at 7: 3 are more preferable.The polymer having a silsesquioxane skeleton may have a random structure, a trapezoidal structure, and a cage structure, and any of them may be used. Examples of the compound system containing a Ti—O bond include (i) tetra-i-propoxy titanium, tetra-n-butoxy titanium, (2-ethylhexyloxy) titanium, And titanium alkoxy titanium such as titanium-i-propoxy octyl glycolate; (ii) di-i-propoxy-bis (ethylacetone) titanium, and propanedioxy titanium bis (ethylethyl)钛 Acetate), etc .; (iii) iC3 H7 O-[-Ti (O-i-C3 H7 )2 -O-]n -i-C3 H7 And n-C4 H9 O-[-Ti (O-n-C4 H9 )2 -O-]n -n-C4 H9 And other titanium polymers; (iv) tri-n-butoxytitanium monostearate, titanium stearate, di-i-propoxytitanium diisostearate, and (2-n-butoxy Titanium compounds such as carbonylbenzyloxy) tributoxy titanium; (v) water-soluble titanium compounds such as di-n-butoxy-bis (triethanolamine ketone) and the like. [0164] Among them, as a compound containing a Ti—O bond is di-n-butoxy‧bis (triethanolamine ketone) titanium (Ti (OC4 H9 )2 [OC2 H4 N (C2 H4 OH)2 ]2 ) Is ideal. [0165] The separation layer 4 described above contains a compound having a structure having infrared absorption properties, but the separation layer 4 is a step further and may contain components other than the above-mentioned compounds. Examples of the component system include a filler, a plasticizer, and a component capable of improving the peelability of the support plate 2. These ingredients may be appropriately selected from previously generally known substances or materials that do not hinder or promote the absorption of infrared rays according to the above-mentioned structure and the deterioration of the compound. [0166] (Infrared absorbing substance) The separation layer 4 may contain an infrared absorbing substance. The separation layer 4 is constituted by containing an infrared absorbing substance, and absorbs light to cause deterioration. As a result, the separation layer 4 loses its strength or adhesiveness before receiving light. Therefore, by applying a slight external force (for example, lifting the support plate 2 and the like), the separation layer 4 can be broken, and the support plate 2 and the substrate 1 can be easily separated. [0167] The infrared absorbing substance may have a structure that is deteriorated by absorbing infrared rays. For example, carbon black, iron particles, or aluminum particles can be suitably used. The infrared absorbing substance absorbs light having a wavelength in a specific range depending on the type. By irradiating the separation layer 4 with light having a wavelength in a range absorbed by the infrared absorbing substance of the separation layer 4, the infrared absorbing substance can be appropriately modified. (Reactive polysilsesquioxane) The separation layer 4 can be formed by polymerizing a reactive polysilsesquioxane, whereby the separation layer 4 has high chemical resistance and high heat resistance. . [0169] In this specification, a reactive polysilsesquioxane is a polysilsesquioxane having a silanol group at the end of the polysilsesquioxane skeleton or a functional group capable of forming a silanol group by hydrolysis. Siloxane can polymerize each other by condensing the silanol group or a functional group capable of forming a silanol group. In addition, if the reactive polysilsesquioxane has a silanol group or a functional group capable of forming a silanol group, a silsesquioxane skeleton having a random structure, a cage structure, a ladder structure, or the like can be used. [0170] It is preferable that the reactive polysilsesquioxane system has a structure represented by the following formula (12).In the formula (12), R "is independently selected from the group consisting of hydrogen and an alkyl group having 1 to 10 carbon atoms, and is composed of hydrogen and an alkyl group having 1 to 5 carbon atoms. The group is preferably selected. If "R" is hydrogen or an alkyl group having a carbon number of 1 to 10, heating by the step of forming the separation layer can make the reactive polymerization multiplied by the formula (12). The siloxanes are suitably condensed. [0171] In formula (12), p is preferably an integer of 1 or more and 100 or less, and an integer of 1 or more and 50 or less is preferable. The reactive polysilsesquioxane is formed by having a repeating unit represented by the formula (12), which is more than that of other materials. It has a higher Si-O bond content and can be formed in infrared rays (0.78 μm or more, 1000 μm). Below), far-infrared rays (3 μm or more and 1000 μm or less) are preferable, and the separation layer 4 having a high absorbance having a wavelength of 9 μm or more and 11 μm or less is more preferable. [0172] In the formula (12), R 'are independent organic groups which are the same or different from each other. Here, the R system is, for example, an aryl group, an alkyl group, or an alkenyl group, and these organic groups may have a substituent. [0173] When R 'is an aryl group, a phenyl group, a naphthyl group, an anthryl group, a phenanthryl group and the like can be mentioned, and a phenyl group is preferable. In addition, the aryl system may be bonded to the polysilsesquioxane skeleton through an alkylene group having 1 to 5 carbon atoms. [0174] When R 'is an alkyl group, examples of the alkyl group include a linear, branched, or cyclic alkyl group. When R is an alkyl group, a carbon number of 1 to 15 is preferable, and 1 to 6 is more preferable. In addition, when R is a cyclic alkyl group, it may be an alkyl group having a monocyclic or bicyclic structure. [0175] In the case where R ′ is an alkenyl group, as in the case of an alkyl group, linear, branched, or cyclic alkenyl groups may be mentioned, and the alkenyl-based carbon number is preferably 2 to 15, 2 to 6 are preferable. When R is a cyclic alkenyl group, it may be an alkenyl group having a monocyclic or bi- to tetracyclic structure. Examples of the alkenyl group include a vinyl group and an allyl group. [0176] Examples of the substituent group which R 'may have include a hydroxyl group and an alkoxy group. When the substituent is an alkoxy group, a linear, branched, or cyclic alkyl alkoxy group may be mentioned. The number of carbon atoms of the alkoxy group is preferably 1 to 15, and 1 to 10 is more preferable. ideal. [0177] In one aspect, the content of the reactive polysilsesquioxane is preferably 70 mole% or more and 99 mole% or less, and more preferably 80 mole% or more and 99 mole% or less. If the content of the reactive polysilsesquioxane is 70 mole% or more and 99 mole% or less, it can be formed by irradiating infrared rays (ideally far-infrared rays, more preferably light having a wavelength of 9 μm or more and 11 μm or less). A suitably deteriorated separation layer. [0178] In one aspect, the weight average molecular weight (Mw) of the reactive polysilsesquioxane is preferably 500 or more and 50,000 or less, and more preferably 1,000 or more and 10,000 or less. If the weight average molecular weight (Mw) of the reactive polysilsesquioxane is 500 or more and 50,000 or less, it can be suitably dissolved in a solvent and can be suitably coated on a support. [0179] Examples of commercially available products that can be used as the reactive polysilsesquioxane include SR-13, SR-21, SR-23, and SR-33 manufactured by Konishi Chemical Industry Co., Ltd. [0180] <4. Modified Example of Laminated Body> In the first embodiment described above, the laminated body 100 having the separation layer 4 between the support plate 2 and the adhesive layer 3 was used. However, in the case where an adhesive layer having a degree of peeling force that can be peeled off by applying a mechanical force is used, even if there is no separation layer, the adhesive layer is a laminated body directly adhering to the substrate and the support plate. The support separating device described in Embodiment 1 separates the support plate. [0181] Examples of the adhesive system capable of forming an adhesive layer having an adhesive force to such an extent that it can be peeled off by applying a mechanical force include pressure sensitive adhesives, peelable adhesives, and the like. Examples of pressure-sensitive adhesives (adhesives) include generally known pressure-sensitive adhesives such as synthetic rubbers such as latex rubber, acrylic rubber, isoprene rubber, and tackifier resins. The peelable adhesive may be peelable. For example, the release force may be adjusted by blending a release agent such as wax or silicone with a thermoplastic resin, a photocurable resin, or a thermosetting resin. The adhesive. Moreover, it may be a hardening type adhesive, which contains a thermosetting resin, a photocurable resin, etc., and hardens these resins, and develops peelability. Moreover, such a peelable adhesive agent may be an adhesive agent which contains a thermoplastic resin with low adhesive force, such as beeswax and wax, as a main component. [Embodiment 2] In the first embodiment described above, as shown in FIG. 6, a description will be given of a configuration in which gas is ejected simultaneously from all of the gas ejection sections 24 provided in four places, but the present invention is not limited to this. . In the second embodiment, another aspect related to gas ejection will be described with reference to FIG. 7. [0183] FIG. 7 is a schematic diagram showing the configuration of the second embodiment when a gas is ejected from the gas ejection unit 24, and is a diagram showing a state where the laminated body 100 is viewed in plan. 7 is a view corresponding to FIG. 6 of the first embodiment. [0184] In the second embodiment, in the step of ejecting the gas from the gas ejection section 24, first, as shown in FIG. 7 (a), the gas is ejected from the gas ejection section 24 at the position (i). The gas ejection unit 24 of ii) to (iv) does not eject gas. Here, the gas ejection unit 24 at the position (i) sprays, for example, a gas of 0.5 L / min for 3 seconds into the gap 7. [0185] Next, as shown in FIG. 7 (b), the gas ejection location is switched, and the gas ejection from the gas ejection portion 24 at the position (iv) is started, and the gas ejection portion 24 at the position (i) is stopped. The gas spurted. At this time, the gas ejection section 24 at the positions (ii) and (iii) does not eject gas. Here, the gas ejection part 24 at the position (iv) sprays, for example, a gas of 0.5 L / min for 3 seconds into the gap 7. [0186] Next, as shown in FIG. 7 (c), the gas ejection location is switched, and the gas ejection from the gas ejection portion 24 at the positions (i) and (iv) is started. At this time, the gas ejection section 24 at the positions (ii) and (iii) does not eject gas. Here, the gas ejection unit 24 at the positions (i) and (iv) sprays, for example, a gas of 0.5 L / min for 5 seconds into the gap 7. [0187] By going through the above steps, the support plate 2 can also be separated from the laminate 100. [0188] The switching of the above-mentioned gas ejection space can be performed by controlling the control device (not shown) of the support separation device 10 of the first embodiment. [0189] [Embodiment 3] In the first embodiment described above, as shown in FIG. 3 (c), a configuration in which each jig 23 has two inclined surfaces 23b and an ejection port 27 is disposed therebetween will be described. However, the arrangement position of the discharge port 27 in the present invention is not limited to this. The ejection port 27 may be disposed near the inclined surface 23b. This will be described using FIG. 8. [0190] FIG. 8 is a diagram showing the configuration of the third embodiment. The third embodiment has the same configuration as the first embodiment except that the arrangement of the inclined surface 23b and the discharge port 27 is different from the first embodiment. [0191] Specifically, as shown in FIG. 8, in the third embodiment, along the lower end (bottom) of the opposite surface 23a, an inclined surface 23b is formed in the middle portion to hold the inclined surface 23b. 。Equipped with an outlet 27. [0192] In this way, by setting the arrangement position of the ejection port 27 to be near the inclined surface 23b, the inclined surface 23b is brought into contact with the surface located on the flat plate portion 21 at the outer peripheral end portion of the support plate 2. In the chamfered portion 2a on the rear surface side, gas can be efficiently ejected into the gap formed on the outer peripheral portion of the support plate 2, and the outer peripheral portion of the support plate 2 can be appropriately held. [0193] [Embodiment 4] In the first embodiment, the gas ejection unit 24 is connected to the ejection port 27 provided in each jig 23, but the present invention is not limited to this. For example, it is also possible to maintain the gap 7 while the suction pad 22 is adsorbed on the outer peripheral portion of the upper surface of the support plate 2, and one of the nozzles for ejecting the gas is moved in the circumferential direction at the peripheral portion of the laminate 100 and ejects the gas in the gap. 7 appearance. [0194] [Embodiment 5] The above-mentioned Embodiment 1 is a structure in which the jig 23 and the gas ejection unit 24 are raised and lowered integrally, and are configured to slide and move integrally. However, the present invention is not limited to this, and each of the jigs 23 and the gas ejection unit 24 may be provided with a driving mechanism, and each step shown in FIGS. 5 (a) to 5 (e) may be performed. [0195] In the case where each has a driving mechanism, after the gas ejection unit 24 can be moved to a desired position for gas ejection in FIG. 5 (e), the gas is ejected from the gas ejection unit 24. Thereby, the gap can be enlarged more effectively. [Other Embodiments] (1) In the above-mentioned embodiment, the shape of the laminate in plan view is circular, but the shape of the laminate in plan view separated by the support separating device and method of the present invention is circular. (That is, the shape in plan view on the substrate and the support) may be a polygon such as a rectangle or a square. The support separation device and the support separation method of the present invention are based on ejecting fluid between the substrate and the support. For example, the substrate and the support may be separated, and the shape of the laminate in plan view is not limited. Therefore, the support separation device and the support separation method of the present invention are not limited to WLP (Wafer Level Package) known to perform semiconductor packaging (semiconductor device) including semiconductor elements (electronic parts), It can also be suitably applied to PLP (Panel Level Package). [0197] The present invention is not limited to the above-mentioned embodiments, and various changes can be made in the scope indicated in the claims, and it is obtained by appropriately combining technical means disclosed in different embodiments. Embodiments are also included in the technical scope of the present invention.

[0198][0198]

1‧‧‧基板1‧‧‧ substrate

2‧‧‧支持板(支持體)2‧‧‧ support board (support body)

2a‧‧‧倒角部位2a‧‧‧ Chamfer

3‧‧‧接著層3‧‧‧ Adjacent layer

4‧‧‧分離層4‧‧‧ separation layer

4a‧‧‧區域4a‧‧‧area

5‧‧‧切割膠帶5‧‧‧ cutting tape

6‧‧‧切割框6‧‧‧ cutting frame

7‧‧‧間隙7‧‧‧ clearance

10‧‧‧支持體分離裝置10‧‧‧ Support body separation device

20‧‧‧保持部20‧‧‧ Holding Department

21‧‧‧平板部21‧‧‧ Flat Department

22‧‧‧吸附墊(吸附部)22‧‧‧Adsorption pad (adsorption section)

23‧‧‧夾具(把持部)23‧‧‧Jig (holding part)

23a‧‧‧對立面23a‧‧‧ Opposite

23b‧‧‧傾斜面(卡止面)23b‧‧‧inclined surface (locking surface)

24‧‧‧氣體噴出部(噴出部)24‧‧‧Gas ejection section (ejection section)

25‧‧‧滑動驅動部25‧‧‧ Sliding drive unit

26‧‧‧位準塊26‧‧‧level block

26a‧‧‧抵接面26a‧‧‧ abutment

27‧‧‧噴出口(開口部)27‧‧‧Ejection port (opening)

30‧‧‧昇降部30‧‧‧ Lifting Department

40‧‧‧光照射部40‧‧‧light irradiation section

50‧‧‧平台50‧‧‧platform

51‧‧‧多孔部51‧‧‧ porous section

100‧‧‧層合體100‧‧‧ laminated

Claims (14)

一種支持體分離裝置,其係自介由接著層而貼附基板與支持上述基板的支持體而成的層合體,分離上述支持體的支持體分離裝置,其特徵為具備   將上述層合體由基板側固定的載置台、   保持上述支持體的保持部、   使上述保持部相對於上述載置台而昇降的昇降部,   上述保持部係具備   至少一個之把持部,其係把持上述支持體之外周端部,於上述基板與上述支持體之間形成間隙;   一種吸附部,其係藉由在上述支持體的上述間隙形成的面之背面吸附保持上述支持體而舉升,維持上述間隙;   上述把持部係具備一種噴出部,該噴出部為從藉由上述吸附部而維持的上述間隙朝向上述層合體之內部,噴出流體。A support separation device is a support separation device that separates the support from a laminate formed by attaching a substrate and a support that supports the substrate through an adhesive layer. The support separation device is characterized in that the support is separated from the substrate by a substrate. A side-fixed mounting table, a holding section holding the support, 升降 a lifting section for raising and lowering the holding section relative to the mounting table, the holding section is provided with at least one holding section for holding an outer peripheral end portion of the support Forming a gap between the substrate and the support; 吸附 an adsorption part which lifts up and maintains the support by adsorbing and holding the support on the back surface of the surface formed by the gap of the support; the holding part is It is provided with a discharge part which discharges a fluid from the said gap maintained by the said adsorption part toward the inside of the said laminated body. 如請求項1之支持體分離裝置,其中,上述把持部係藉由把持上述支持體之外周端部而舉升而形成上述間隙。According to the support separation device of claim 1, wherein the holding portion is raised by holding the outer peripheral end portion of the support, the gap is formed. 如請求項1或2之支持體分離裝置,其中,上述保持部係各自複數具備上述把持部及吸附部,   上述複數層之把持部係各自具備上述噴出部。According to the support separation device of claim 1 or 2, wherein each of the holding portions includes the holding portion and the suction portion, and each of the holding portions of the plurality of layers includes the ejection portion. 如請求項1~3中任1項之支持體分離裝置,其中,於上述支持體之外周端部係設置倒角部位,   上述把持部係具有卡止上述支持體之倒角部位的卡止面,   以相鄰於上述卡止面之方式進行,噴出流體的開口部被配置於上述噴出部。For example, the support separating device according to any one of claims 1 to 3, wherein a chamfered portion is provided at an outer peripheral end portion of the support, and the holding portion has a locking surface that locks the chamfered portion of the support. Is performed adjacent to the locking surface, and the opening portion through which the fluid is ejected is disposed in the ejection portion. 如請求項4之支持體分離裝置,其中,於上述卡止面內設有上述開口部。The support separating device according to claim 4, wherein the opening is provided in the locking surface. 如請求項1~5中任1項之支持體分離裝置,其中,上述支持體係由透過光的材料所構成,於上述層合體係於上述基板與上述支持體之間,設有藉由照射光而變質的分離層,   更具備一種光照射部,其係經由上述支持體,照射光於上述分離層之周緣部分之至少一部分之區域,   上述把持部係以在經由上述區域而層合的上述支持體與上述基板之間形成間隙之方式,以把持上述支持體之外周端部而舉升而成。For example, the support separation device according to any one of claims 1 to 5, wherein the support system is made of a material that transmits light, and the laminated system is provided between the substrate and the support, and is irradiated with light. The deteriorated separation layer further includes a light irradiating portion that irradiates light to at least a part of a peripheral portion of the separation layer through the support, and the holding portion is based on the support laminated on the portion through the area. The method of forming a gap between the body and the substrate is performed by holding and lifting the outer peripheral end portion of the support. 如請求項1~6中任1項之支持體分離裝置,其中,上述保持部係具備連接上述昇降部的平板部,   該平板部係於相對於上述支持體的側之面之周緣部分配置上述吸附部,於相對於上述支持體的面之背面係具備使上述把持部,以從相較於上述平板部之周緣部分更外側接近上述吸附部之方式,平行地移動於上述支持體之平面方向的驅動部。The support separating device according to any one of claims 1 to 6, wherein the holding portion includes a flat plate portion connected to the lifting portion, and the flat plate portion is arranged on a peripheral portion of a side surface facing the support. The suction part is provided on the back side of the surface opposite to the support so that the grip part moves parallel to the support part so as to approach the suction part from an outer side than the peripheral part of the flat plate part. Driving department. 如請求項7之支持體分離裝置,其中,在上述平板部的相較於相對上述支持體的側之面之周緣部分更內側係設置具有抵接於上述支持體之平面部的抵接面的抵接部,該抵接部為樹脂製。The support separating device according to claim 7, wherein the flat plate portion is provided with an abutment surface having an abutting surface abutting the flat portion of the support body on the inner side of the peripheral portion of the flat surface portion relative to the side surface facing the support body. The contact portion is made of resin. 一種支持體分離方法,其係自介由接著層而貼附基板與支持上述基板的支持體而成的層合體,分離上述支持體,其特徵為包含   一種間隙形成步驟,其係固定上述基板,藉由至少一個把持部而把持上述支持體之外周端部,於上述基板與上述支持體之間形成間隙;   一種間隙維持步驟,其係藉由在形成上述間隙的面之背面吸附保持上述支持體而舉升,維持上述間隙;   一種分離步驟,其係上述間隙維持步驟後,藉由從上述間隙朝向上述層合體之內部,由上述把持部所具備的噴出部噴出流體,由上述層合體分離上述支持體。A method for separating a support, which is a laminated body formed by attaching a substrate and a support supporting the substrate through an adhesive layer, and separating the support, which is characterized by including a gap forming step, which fixes the substrate, The outer peripheral end portion of the support is held by at least one holding portion to form a gap between the substrate and the support; 间隙 a gap maintaining step that adsorbs and holds the support by a back surface of a surface on which the gap is formed And lifting to maintain the gap; 分离 a separation step, after the gap maintaining step, the fluid is ejected from the ejection portion provided in the holding portion from the gap toward the inside of the laminate, and the laminate is separated from the laminate Support. 如請求項9之支持體分離方法,其中,在上述間隙形成步驟係上述把持部為藉由把持上述支持體之外周端部而舉升而形成上述間隙。The method for separating a support according to claim 9, wherein in the step of forming the gap, the holding portion is configured to form the gap by lifting the outer peripheral end portion of the support. 如請求項9或10之支持體分離方法,其中,在上述間隙形成步驟係藉由複數之上述把持部而把持上述支持體之外周端部,於上述基板與上述支持體之間形成複數之上述間隙,   在上述間隙維持步驟係將在上述支持體的藉由複數之上述把持部把持上述支持體而形成上述間隙的各個複數之面之背面,個別地吸附保持而舉升,   在上述分離步驟係由複數之上述間隙之中之一部分之間隙朝向上述層合體之內側,藉由上述把持部所具備的噴出部而噴出流體。The support separation method of claim 9 or 10, wherein in the gap forming step, the outer peripheral end portion of the support is held by a plurality of the holding portions, and a plurality of the above are formed between the substrate and the support. In the gap, in the gap maintaining step, the respective surfaces of the plural surfaces of the support which form the gap by holding the support by a plurality of the holding portions are individually adsorbed and lifted, and in the separation step system A fluid is ejected from a gap of one of the plurality of gaps toward the inside of the laminated body through a discharge portion provided in the gripping portion. 如請求項9~11中任1項之支持體分離方法,其中,在上述間隙形成步驟後,上述間隙維持步驟前,分離上述支持體之外周端部與上述把持部。The method for separating a support according to any one of claims 9 to 11, wherein after the gap forming step and before the gap maintaining step, the outer peripheral end portion of the support and the holding portion are separated. 如請求項9~12中任1項之支持體分離方法,其中,在上述間隙形成步驟係在藉由上述把持部而把持上述支持體之外周端部時,吸附保持在上述支持體的上述把持部所接觸的部分之周緣部分而舉升。The support separation method according to any one of claims 9 to 12, wherein in the gap forming step, when the outer peripheral end portion of the support is gripped by the gripping portion, the gripping that is held on the support is adsorbed and held. The peripheral part of the part contacted by the part is lifted. 如請求項9~13中任1項之支持體分離方法,其中,上述支持體係由透過光的材料所構成,於上述層合體係於上述基板與上述支持體之間,設有藉由照射光而變質的分離層,   包含一種光照射步驟,其係於上述間隙形成步驟前,經由上述支持體,照射光於上述分離層之周緣部分之至少一部分之區域;   在上述間隙形成步驟,其係上述把持部為以在經由上述區域而層合的上述支持體與上述基板之間形成間隙之方式,把持上述支持體之外周端部。The support separation method according to any one of claims 9 to 13, wherein the support system is composed of a light-transmitting material, and the laminated system is provided between the substrate and the support, and is provided with irradiation light. For the deteriorated separation layer, includes a light irradiation step which irradiates light through at least a part of a peripheral portion of the separation layer through the support before the gap formation step; in the gap formation step, which is the above The holding portion is configured to hold an outer peripheral end portion of the support so that a gap is formed between the support and the substrate laminated through the region.
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