TWI853898B - Substrate cleaning method, substrate cleaning device and substrate cleaning kit - Google Patents

Abstract

The subject of the present invention is to remove the residue of the separation layer from the substrate after the support body is separated. The solution of the present invention is a substrate cleaning method, which is to deteriorate the separation layer in a layer stack including a support body, a separation layer, a bonding layer and a substrate, and clean the substrate separated from the support body. The substrate cleaning method includes: a first cleaning process, in which the substrate is cleaned by using a first cleaning liquid having a specific resin dissolved in a first solvent that can dissolve the bonding layer, and a second cleaning process, in which, after the first cleaning process, the substrate is cleaned by using a second cleaning liquid having a second solvent that can dissolve the bonding layer.

Description

Substrate cleaning method, substrate cleaning device and substrate cleaning kit

The present invention relates to a substrate cleaning method, a substrate cleaning device and a substrate cleaning kit.

In recent years, a technique called fan-out PLP (Fan-out Panel Level Package) technology has been known as an example of a method for manufacturing electronic devices. In the fan-out PLP technology, for example, a separation layer that is degraded by light absorption or heat, and a substrate having electronic components separated by a bonding layer are stacked on a support such as a glass plate to form a laminate. There is a proposal that after the laminate is processed, light or heat is applied to the separation layer to degrade it, the substrate is separated from the support, and the bonding layer attached to the substrate is removed (for example, refer to patent document 1). [Prior art document] [Patent document]

[Patent Document 1] Japanese Patent Application Publication No. 2004-064040

[The problem the invention is trying to solve]

In Patent Document 1, the bonding layer remaining on the substrate after the support body is separated is removed by a cleaning solution. Even if the bonding layer is dissolved and removed by the cleaning solution, there are cases where the residue of the separation layer is not washed off from the substrate and remains. In the state of the substrate with the residue of the separation layer attached, there is a concern that the quality of the electronic device finally obtained may be reduced.

The present invention aims to provide a substrate cleaning method, a substrate cleaning device and a substrate cleaning kit capable of removing residues of a separation layer from a substrate after a support body is separated. [Means for solving the problem]

In the first aspect of the present invention, a substrate cleaning method is provided, which is to deteriorate the separation layer in a layer stack including a support body, a separation layer, a bonding layer and a substrate stacked in sequence, and clean the substrate separated from the support body. The substrate cleaning method includes: a first cleaning process, in which the substrate is cleaned by using a first cleaning liquid having a specific resin dissolved in a first solvent that can dissolve the bonding layer, and a second cleaning process, in which, after the first cleaning process, the substrate is cleaned by using a second cleaning liquid having a second solvent that can dissolve the bonding layer.

In the second aspect of the present invention, a substrate cleaning device is provided, which deteriorates the separation layer in a layer stack including a support body, a separation layer, a bonding layer and a substrate stacked in sequence, and cleans the substrate separated from the support body. The substrate cleaning device comprises: a first cleaning section, which cleans the substrate by using a first cleaning liquid having a specific resin dissolved in a first solvent that can dissolve the bonding layer, and a second cleaning section, which cleans the substrate by using a second cleaning liquid having a second solvent that can dissolve the bonding layer after the first cleaning process.

In the third aspect of the present invention, a substrate cleaning kit is provided, which is used to deteriorate the separation layer in a layer stacked with a support body, a separation layer, a bonding layer and a substrate in sequence, and to clean the substrate separated from the support body. The substrate cleaning kit comprises: a first cleaning liquid, which is a first solvent that dissolves a specific resin in a bonding layer, and is used to clean the substrate; and a second cleaning liquid, which is used to clean the substrate after cleaning with the first cleaning liquid, and has a second solvent that can dissolve the bonding layer. [Effect of the invention]

According to the aspect of the present invention, the residue of the separation layer can be removed from the substrate after the support body is separated, thereby preventing the quality of the electronic device from being degraded.

The following describes the embodiments of the present invention with reference to the attached drawings. However, the present invention is not limited to the embodiments. In addition, in the attached drawings, in order to make the components of the embodiments easier to understand, some of them are enlarged or emphasized, or some of them are simplified for display, which may be different from the actual structure, shape, scale, etc.

<Substrate cleaning method> Figure 1 is a flow chart of one example of a substrate cleaning method including an implementation form. In the flow chart of Figure 1, one example of a method for manufacturing an electronic device including one example of a substrate cleaning method including an implementation form is shown. In this implementation form, a method for manufacturing an electronic device using the so-called fan-out PLP technology is cited as an example for explanation. As shown in FIG. 1 , the manufacturing method of the electronic device includes: a separation layer forming process (step S01), a subsequent layer forming process (step S02), a substrate forming process (step S03), a mold polishing process (step S04), a separation layer deterioration process (step S05), a support body peeling process (step S06), a first cleaning process (step S07), and a second cleaning process (step S08).

The first cleaning process (step S07) and the second cleaning process (step S08) in FIG. 1 are examples of the substrate cleaning method in the implementation form. In addition, the separation layer forming process (step S01), the connecting layer forming process (step S02), the substrate forming process (step S03), and the sealing and polishing process (step S04) are used to form the structure of the stacked body 100. The stacked body 100 is a structure in which the support body 1, the separation layer 2, the connecting layer 3 and the substrate 4 are stacked in sequence (refer to FIG. 6). Below, each process in the manufacturing method of the electronic device is explained along the flow chart shown in FIG. 1.

[Separation layer formation process (step S01)] First, in step S01, a separation layer is formed on the support body. FIG. 2 is a diagram showing the separation layer formation process which is one of the processes in the manufacturing method of the electronic device. As shown in FIG. 2, the separation layer 2 is formed on one side of the support body 1.

(Support body) The support body 1 is bonded to the substrate 4 (4A) (see Fig. 5 and Fig. 6) via the separation layer 2 and the bonding layer 3 to support the substrate 4. The support body 1 preferably has the strength required to prevent the substrate 4 from being damaged or deformed. Furthermore, the support body 1 is preferably formed of a material that allows light of a specific wavelength (light of a wavelength that can cause the separation layer 2 described later to be deformed) to pass through. The material of the support body 1 can be, for example, glass, silicone, acrylic resin, etc. The shape of the support body 1 can be, for example, rectangular or circular when viewed from a plane, but is not limited to these.

The support body 1 may also have a coating layer on a substrate formed of the aforementioned material. The coating layer may be a single layer or a plurality of layers. As the coating layer, for example, a layer (cured film) containing a curing resin may be cited. As the curing resin, for example, epoxy resin, acrylic resin, copolymers of hydrocarbon monomers and acrylic monomers may be cited, but it is not limited to these. The coating layer may, for example, be arranged between the support body 1 and the separation layer 2. The support body 1 may, for example, have a thickness of about 500 to 1500 μm, but it is not limited to this thickness.

(Separation layer) Separation layer 2 is arranged to contact with bonding layer 3 (see FIG. 3). Separation layer 2 is degraded by irradiation with light, heating, immersion in a solvent, etc. Degradation of separation layer 2 means that separation layer 2 is destroyed by a slight external force, or the bonding force between separation layer 2 and the contacting layer is reduced. There is no particular limitation on the method for forming separation layer 2, and a well-known method can be used. For example, methods such as spin coating, dipping, roller blade coating, spray coating, slit coating, chemical vapor deposition (CVD), etc. may be used.

The thickness of the separation layer 2 is, for example, more preferably 0.05 to 50 μm, and more preferably 0.3 to 1 μm. As long as the thickness of the separation layer 2 is within the range of 0.05 to 50 μm, the desired modification can be produced in the separation layer 2 by short-time light irradiation, low-energy light irradiation, short-time heating, short-time immersion in a solvent, etc. In addition, from the perspective of productivity, the thickness of the separation layer 2 is particularly preferably within the range of 1 μm or less.

Here, the separation layer forming composition as a material for forming the separation layer 2 is any material that can change the formed separation layer 2 by short-term light irradiation, low-energy light irradiation, short-term heating, short-term immersion in a solvent, etc. As the separation layer forming composition, for example, a resin component having a phenol skeleton, a polymer having a repeating unit having a light-absorbing structure, fluorocarbon, an inorganic substance, a compound having an infrared-absorbing structure, an infrared-absorbing substance, a reactive polysilsesquioxane, or a material containing these can be used. Furthermore, the composition for forming a separation layer may contain fillers, plasticizers, thermal acid generator components, photoacid generator components, organic solvent components, surfactants, sensitizers, or components that can enhance the separation properties of the supporting substrate as arbitrary components.

＜＜Resin component having a phenolic skeleton＞＞ Since the separation layer 2 has a phenolic skeleton, it is easily deteriorated (oxidized, etc.) by heating, etc., and the photoreactivity is improved. Here, "having a phenolic skeleton" means containing a hydroxybenzene structure. The resin component having a phenolic skeleton has film-forming ability, and preferably has a molecular weight of 1000 or more. The film-forming ability is improved by the molecular weight of the resin component being 1000 or more. The molecular weight of the resin component is more preferably 1000 to 30000, more preferably 1500 to 20000, and particularly preferably 2000 to 15000. By making the molecular weight of the resin component below the upper limit of the more ideal range, the solubility of the separation layer forming composition in the solvent can be improved. The molecular weight of the resin component was a weight average molecular weight (Mw) in terms of polystyrene obtained by GPC (gel permeation chromatography).

Examples of the resin component having a phenolic skeleton include novolac-type phenolic resins, resol-type phenolic resins, hydroxystyrene resins, hydroxyphenylsilsesquioxane resins, hydroxybenzylsilsesquioxane resins, acrylic resins containing a phenolic skeleton, and resins having repeating units represented by the following general formula (P2) (hereinafter referred to as "resin (P2)"), etc. Among these, novolac-type phenolic resins, resol-type phenolic resins, and resin (P2) are more preferred.

[In the above formula, L ^p1 is a divalent linking group. R ^P is a (n _P0 +1)-valent aromatic hydrocarbon group. _{n P0} is an integer from 1 to 3.]

In the above formula (P2), ^Lp1 is a divalent linking group, preferably a divalent linking group containing a heteroatom. As ^Lp1 , there can be cited linking groups having various skeletons introduced in order to impart desired characteristics. In the above formula (P2), ^RP is an aromatic hydrocarbon group having a valence of ( _nP0 +1). As the aromatic hydrocarbon group in ^RP , there can be cited a group in which ( _nP0 +1) hydrogen atoms are excluded from an aromatic ring. The aromatic ring here is not particularly limited as long as it is a cyclic conjugate system having 4n+2 π electrons, and may be a monocyclic or polycyclic type. The number of carbon atoms in the aromatic ring is preferably 5 to 30, more preferably 5 to 20, still more preferably 6 to 15, and particularly preferably 6 to 12. Examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene, and aromatic heterocyclic rings in which a portion of carbon atoms constituting the aromatic hydrocarbon rings are substituted with heteroatoms. Examples of heteroatoms in the aromatic heterocyclic ring include oxygen atoms, sulfur atoms, and nitrogen atoms. Specifically, examples of the aromatic heterocyclic ring include pyridine rings and thiophene rings. In addition, as the aromatic hydrocarbon group in R ^P , there can be cited a group excluding (n _P0 +1) hydrogen atoms in an aromatic compound containing 2 or more aromatic rings (e.g., biphenyl, fluorene, etc.). In the above formula (P2), n _P0 is an integer of 1 to 3, preferably 1 or 2, and particularly preferably 1.

As the above resin (P2), a resin produced by reacting aminophenols, aminonaphthols or anilines with a compound having two epoxy groups in one molecule can be used. Aminophenols include 2-aminophenol, 3-aminophenol, 4-aminophenol, 4-amino-3-methylphenol, 2-amino-4-methylphenol, 3-amino-2-methylphenol, 5-amino-2-methylphenol, etc. Aminonaphthols include 1-amino-2-naphthol, 3-amino-2-naphthol, 5-amino-1-naphthol, etc.

Examples of compounds having two epoxy groups in one molecule include bisphenol epoxy resins such as EPICLON850, EPICLON830 (manufactured by DIC Corporation), and JERYX-4000 (manufactured by Mitsubishi Chemical Corporation); diol epoxy resins such as DENACOL EX-211, DENACOL EX-212, DENACOL EX-810, DENACOL EX-830, DENACOL EX-911, DENACOL EX-920, and DENACOL EX-930 (manufactured by Nagase ChemteX Corporation); and DENACOL EX-711, DENACOL EX-721 (manufactured by Nagase ChemteX Corporation). Dicarboxylic acid ester epoxy resins such as chemteX Co., Ltd. and jER191P (Mitsubishi Chemical Co., Ltd.); silicone epoxy resins such as X-22-163 and KF-105 (Shin-Etsu Chemical Co., Ltd.). The heating treatment temperature during the reaction is preferably set to 60°C or more and 250°C or less, and more preferably set to 80°C or more and 180°C or less.

<<Polymer having a repeating unit containing a light-absorbing structure>> The separation layer 2 may also contain a polymer having a repeating unit containing a light-absorbing structure. This polymer is deteriorated by exposure to light. The light-absorbing structure may include, for example, an atomic group containing a conjugated π-electron system composed of a substituted or unsubstituted benzene ring, a condensed ring, or a heterocyclic ring. More specifically, the light-absorbing structure may include a cardo structure, or a diphenyl ketone structure, a diphenyl sulfone structure, a diphenyl sulfone structure (bisphenyl sulfone structure), a diphenyl structure, or a diphenylamine structure existing in the side chain of the polymer.

The structure having the above light absorption property can absorb light having a desired wavelength range depending on its type. For example, the wavelength of light that can be absorbed by the structure having the above light absorption property is preferably within the range of 100 to 2000 nm, and more preferably within the range of 100 to 500 nm.

The light that can be absorbed by the structure having the above-mentioned light absorption property is, for example, light emitted from a high-pressure mercury lamp (wavelength greater than 254nm and less than 436nm), a KrF excimer laser (wavelength 248nm), an ArF excimer laser (wavelength 193nm), an _F2 excimer laser (wavelength 157nm), a XeCl laser (wavelength 308nm), a XeF laser (wavelength 351nm) or a solid UV laser (wavelength 355nm), or a g-line (wavelength 436nm), an h-line (wavelength 405nm) or an i-line (wavelength 365nm).

<<Fluorocarbon>> The separation layer 2 may also be composed of fluorocarbon. Since the separation layer 2 is composed of fluorocarbon, it is deteriorated by absorbing light, and as a result, the strength or adhesion before receiving the light irradiation is lost. Therefore, by applying a slight external force (for example, lifting the support body 1, etc.), the separation layer 2 is destroyed, and the support body 1 and the substrate 4 can be easily separated. Fluorocarbon constituting the separation layer 2 can be suitably formed into a film by the plasma CVD (chemical vapor deposition) method.

Fluorocarbon absorbs light of a specific wavelength range depending on its type. By irradiating the separation layer with light of a wavelength range absorbed by the fluorocarbon used in the separation layer 2, the fluorocarbon can be appropriately degraded. In addition, the light absorption rate in the separation layer 2 is preferably 80% or more.

The light irradiated to the separation layer 2 is in accordance with the wavelength that the fluorocarbon can absorb. For example, solid lasers such as YAG laser, ruby laser, glass laser, _YVO4 laser, LD laser, fiber laser, liquid lasers such as dye laser, _CO2 laser, excimer laser, Ar laser, He-Ne laser, gas laser, semiconductor laser, free electron laser, or non-laser light can be appropriately used. The wavelength that can deteriorate the fluorocarbon is not particularly limited to this, but, for example, a range of 600nm or less can be used.

＜＜Inorganic matter＞＞ The separation layer 2 may also be composed of an inorganic matter. Such an inorganic matter may be any inorganic matter that is deteriorated by absorbing light, and may be suitably exemplified by at least one selected from the group consisting of metals, metal compounds, and carbon. A metal compound refers to a compound containing a metal atom, and may be exemplified by metal oxides and metal nitrides. Such an inorganic matter may be at least one selected from the group consisting of gold, silver, copper, iron, nickel, aluminum, titanium, chromium, _SiO2 , _SiN , _Si3N4 , TiN, and carbon. In addition, the so-called carbon refers to a concept that may also include allotropes of carbon, such as diamond, fullerene, diamond-like carbon, carbon nanotubes, and the like. The above-mentioned inorganic substances absorb light of a specific wavelength range depending on their type.

The light irradiated to the separation layer 2 composed of inorganic substances is in accordance with the wavelength that the above-mentioned inorganic substances can absorb. For example, solid lasers such as YAG laser, ruby laser, glass laser, _YVO4 laser, LD laser, fiber laser, liquid lasers such as dye laser, _CO2 laser, excimer laser, Ar laser, He-Ne laser, gas laser, semiconductor laser, free electron laser, etc. laser light, or non-laser light can be appropriately used. The separation layer 2 composed of inorganic substances can be formed on the support 1 by, for example, well-known techniques such as sputtering, chemical vapor deposition (CVD), electroplating, plasma CVD, spin coating, etc.

＜＜Compounds with infrared absorbing structures＞＞ Separation layer 2 may also contain compounds with infrared absorbing structures. This compound with infrared absorbing structure changes by absorbing infrared rays. Examples of structures with infrared absorbing properties or compounds with this structure include alkanes, alkenes (ethylene, trans, cis, vinylidene, trisubstituted, tetrasubstituted, conjugated, cyclic), acetylenes (monosubstituted, disubstituted), monocyclic aromatics (benzene, monosubstituted, disubstituted, trisubstituted), alcohols or phenols (free OH, intramolecular hydrogen bonds, intermolecular hydrogen bonds, saturated secondary, saturated tertiary, unsaturated secondary, unsaturated tertiary), acetals, ketones, aliphatic ethers, aromatic ethers, vinyl ethers, ethylene oxide ethers, peroxide ethers, ketones, dialkyl carbonyls, aromatic carbonyls, 1,3-diketone enols, o-hydroxyaryl ketones, dialkyl aldehydes, aromatic aldehydes, carboxylic acids (dimers, carboxylic acid anions), formates, acetates, conjugated esters, non-conjugated esters, aromatic esters, lactones (β-, γ-, δ-), lipids Aliphatic acyl chloride, aromatic acyl chloride, anhydride (conjugated, non-conjugated, cyclic, non-cyclic), primary amide, secondary amide, lactam, primary amine (aliphatic, aromatic), secondary amine (aliphatic, aromatic), tertiary amine (aliphatic, aromatic), primary amine salt, secondary amine salt, tertiary amine salt, ammonium ion, aliphatic nitrile, aromatic nitrile, carbodiimide, aliphatic isonitrile, aromatic isonitrile, isocyanate , thiocyanate, aliphatic isothiocyanate, aromatic isothiocyanate, aliphatic nitro compound, aromatic nitro compound, nitroamine, nitrosoamine, nitrate ester, nitrite ester, nitroso bond (aliphatic, aromatic, monomer, dimer), sulfur compound such as thiol or thiol phenol or thiolic acid, thiocarbonyl, sulfone, sulfone, sulfonyl chloride, primary sulfonamide, secondary sulfonamide, sulfate, carbon-halogen bond, Si- ^A1 bond ( ^A1 is H, C, O or halogen), ^PA2 bond ( ^A2 is H, C or O) or Ti-O bond.

Examples of the structure including the above-mentioned carbon-halogen bond include -CH ₂ Cl, -CH ₂ Br, -CH ₂ I, -CF ₂ -, -CF ₃ , -CH=CF ₂ , -CF=CF ₂ , aryl fluoride, and aryl chloride.

Examples of the structure containing the above-mentioned Si- ^Al bond include SiH, _SiH2 , _SiH3 , Si- _CH3 , Si- _CH2- , Si- _C6H5 , _{SiO -aliphatic, Si-OCH3 ,} Si- _OCH2CH3 , Si- _OC6H5 , Si-O- _Si , Si-OH, SiF, _SiF2 , or _SiF3 . As the structure containing the Si-Al ^bond , a structure having a siloxane skeleton or a silsesquioxane skeleton is particularly preferred.

Examples of the structure containing the above-mentioned ^PA2 bond include PH, _PH2 , P- _CH3 , P- _CH2- , _{PC6H5 , A33-PO (A3 is an aliphatic group or an aromatic group), (A4O)3 -} ^{PO ( A4} _is ^an alkyl group), P- _OCH3 , P- _{OCH2CH3 ,} P- _{OC6H5 ,} POP, P-OH or O=P-OH.

Examples of the compound containing the above-mentioned Ti-O bond include (i) alkoxytitanium such as tetra-i-propoxytitanium, tetra-n-butoxytitanium, tetrakis(2-ethylhexyloxy)titanium or titanium-i-propoxyoctanolate; (ii) chelate titanium such as di-i-propoxy-bis(acetylacetonate)titanium or propanedioxytitanium bis(ethylacetylacetonate); (iii) iC ₃ H ₇ O-[-Ti(OiC ₃ H ₇ ) ₂ -O-] _n -iC ₃ H ₇ or nC ₄ H ₉ O-[-Ti(OnC ₄ H ₉ ) ₂ -O-] _n -nC ₄ H ₉ ; (iv) titanium acylates such as tri-n-butoxytitanium monostearate, titanium stearate, di-i-propoxytitanium diisostearate or (2-n-butoxycarbonylbenzoyloxy)tributoxytitanium; (v) water-soluble titanium compounds such as di-n-butoxy・bis(triethanolamine)titanium. Among these, the compound containing a Ti-O bond is preferably di-n-butoxy・bis(triethanolamine)titanium (Ti(OC ₄ H ₉ ) ₂ [OC ₂ H ₄ N(C ₂ H ₄ OH) ₂ ] ₂ ).

The above-mentioned infrared absorbing structure can absorb infrared rays of a desired wavelength range according to the selection of its type. Specifically, the wavelength of infrared rays that can be absorbed by the above-mentioned infrared absorbing structure is, for example, in the range of 1 to 20 μm, and more preferably in the range of 2 to 15 μm. Furthermore, when the above-mentioned structure is a Si-O bond, a Si-C bond, or a Ti-O bond, it is more preferably in the range of 9 to 11 μm.

In addition, the wavelength of infrared light that can be absorbed by each of the above structures is easily understood by those skilled in the art. For example, as the absorption bands in each structure, reference can be made to the non-patent document: "Spectroscopic Identification of Organic Compounds (5th Edition) - Combined Use of MS, IR, NMR, and UV -" by SILVERSTEIN BASSLER MORRILL (published in 1992), pages 146 to 151.

The compound having an infrared absorption structure used in the formation of the separation layer 2 is not particularly limited as long as it can be dissolved in a solvent for coating and can be cured to form a solid layer among the compounds having the above-mentioned structure. However, in order to effectively deteriorate the compound in the separation layer 2 and facilitate the separation of the supporting matrix and the substrate, it is more ideal that the absorption of infrared rays in the separation layer 2 is large, that is, the transmittance of infrared rays when the separation layer 2 is irradiated with infrared rays is low. Specifically, it is more ideal that the transmittance of infrared rays of the separation layer 2 is lower than 90%, and it is more ideal that the transmittance of infrared rays is lower than 80%.

<<Infrared absorbing material>> The separation layer 2 may also contain an infrared absorbing material. The infrared absorbing material may be any material that is degraded by absorbing light, for example, carbon black, iron particles, or aluminum particles may be used appropriately. Infrared absorbing materials absorb light of a specific wavelength range depending on their type. By irradiating the separation layer 2 with light of a wavelength range that the infrared absorbing material used in the separation layer 2 absorbs, the infrared absorbing material may be degraded appropriately.

<<Reactive polysilsesquioxane>> The separation layer 2 can be formed by polymerizing reactive polysilsesquioxane. The separation layer thus formed has high chemical resistance and high heat resistance.

The so-called "reactive polysilsesquioxane" refers to a polysilsesquioxane having a silanol group or a functional group capable of forming a silanol group by hydrolysis at the end of the polysilsesquioxane skeleton. The silanol group or the functional group capable of forming a silanol group is condensed to polymerize with each other. In addition, as long as the reactive polysilsesquioxane has a silanol group or a functional group capable of forming a silanol group, a reactive polysilsesquioxane having a silsesquioxane skeleton with a random structure, a cage structure, a ladder structure, etc. can be used.

The siloxane content of the reactive polysilsesquioxane is preferably 70 to 99 mol%, more preferably 80 to 99 mol%. If the siloxane content of the reactive polysilsesquioxane is within the aforementioned ideal range, a separation layer that can be suitably degraded by irradiation with infrared rays (preferably far infrared rays, more preferably light with a wavelength of 9 to 11 μm) can be formed. The weight average molecular weight (Mw) of the reactive polysilsesquioxane is preferably 500 to 50,000, more preferably 1,000 to 10,000. If the weight average molecular weight (Mw) of the reactive polysilsesquioxane is within the aforementioned ideal range, it can be suitably dissolved in a solvent and can be suitably coated on a support plate. Examples of commercially available products that can be used as the reactive polysilsesquioxane include SR-13, SR-21, SR-23, and SR-33 (trade names) manufactured by Konishi Chemical Industries, Ltd.

[Adhesive layer formation process (step S02)] Next, in step S02, an adhesive layer is formed on the support body. FIG. 3 is a diagram showing the adhesive layer formation process which is one of the processes in the method for manufacturing an electronic device. As shown in FIG. 3, the adhesive layer 3 is formed on the side of the separation layer 2 where the support body 1 does not exist. The method for forming the adhesive layer 3 may be to apply a solution in which an adhesive (composed of an adhesive layer forming material) is dissolved in a solvent in order to form the adhesive layer 3, or to attach an adhesive tape with an adhesive applied on both sides to the separation layer 2. Although not particularly limited, the adhesive application method includes, for example, a rotary coating method, a dipping method, a roller blade method, a doctor blade method, a spray coating method, a slit nozzle method, etc. In addition, after applying the adhesive on the separation layer 2, it may be dried by heating or the like.

The thickness of the adhesive layer 3 is, for example, preferably in the range of 1 to 200 μm, more preferably in the range of 5 to 150 μm. Furthermore, the thickness of the adhesive layer 3 is preferably thicker than the separation layer 2. In addition, the adhesive composition constituting the adhesive will be described together with the description of the first cleaning process and the second cleaning process described later.

[Substrate formation process (step S03)] Next, in step S03, a substrate is formed on a support body. FIG. 4 is a diagram showing a substrate formation process which is one of the processes in a method for manufacturing an electronic device. FIG. 5 is a diagram showing a substrate formation process which is one of the processes in a method for manufacturing an electronic device, following FIG. 4. First, as shown in FIG. 4, a plurality of electronic components 41 are arranged on the side of the bonding layer 3 where the separation layer 2 does not exist, that is, on the surface 3a. The arrangement of the electronic components 41 is performed by a conveying device (chip bonder, chip mounter) not shown in the figure. In addition, the electronic components 41 can also be bonded by the bonding layer 3 and the arrangement position can be maintained. Alternatively, after a plurality of electronic components 41 are arranged, the electronic components 41 may be pressed onto the adhesive layer 3 by a conveying device or the like while being heated (eg, to about 100° C.) under vacuum.

After the plurality of electronic components 41 are arranged, as shown in FIG. 5, a sealing mold 42 is formed to cover the entire surface 3a of the bonding layer including the electronic components 41. The electronic components 41 are buried in the sealing mold 42 to form a substrate 4A. Furthermore, through the substrate forming process of step S03, a laminate 100A is formed in which the support body 1, the separation layer 2, the bonding layer 3, and the substrate 4A are sequentially stacked.

In addition, the sealing mold 42 may be formed so as to expose a portion (for example, the upper surface) of the electronic component 41. In addition, the sealing mold 42 may be formed using, for example, a material that allows light for deteriorating the separation layer 2 to pass through. Examples of such materials include glass, silicon, and acrylic resin.

[Mold polishing process (step S04)] Next, in step S04, the mold is polished. FIG. 6 is a diagram showing the mold polishing process, which is one of the processes in the method for manufacturing an electronic device. As shown in FIG. 6, the side of the mold 42 where the support body 1 does not exist, that is, the upper surface 42a of the mold 42 is polished by a polishing device not shown. By the mold polishing process of step S04, the electronic component 41 is exposed from the mold 42. By polishing the mold 42, the upper surface 41a of the electronic component 41 and the new upper surface 42b of the mold 42 after polishing become substantially the same surface.

The method of grinding the mold 42 is a well-known method. In addition, in the substrate forming process of step S03, if the mold 42 is formed so that a part of the electronic component 41 is exposed, the mold grinding process can be omitted. In addition, by the mold grinding process of step S04, a laminate 100 is formed in which the support body 1, the separation layer 2, the bonding layer 3, and the substrate 4 are sequentially stacked.

In addition, after the mold polishing process, wiring can be formed on the electronic component 41 and the upper surface 42b of the mold 42 by a conductive material. In addition, the electronic component 41 can be arranged in a manner of being electrically connected to the wiring, and a new mold 42 can be formed in a manner of covering the electronic component 41. In addition, the connection between the wiring and the electronic component 41 can use bumps, welding, etc. In this way, the substrate 4 can be formed so that the layer where the electronic component 41 is arranged is stacked in multiple layers.

[Separation layer deterioration process (step S05)] Next, in step S05, the separation layer is deteriorated. FIG. 7 is a diagram showing the separation layer deterioration process which is one of the processes in the method for manufacturing an electronic device. As shown in FIG. 7, in the laminate 100, light L is irradiated from the irradiation device IR to the separation layer 2 from the side of the support body 1 where the separation layer 2 does not exist, so that the separation layer 2 is deteriorated. The light L is irradiated to the separation layer 2 through the support body 1. The light L irradiated from the irradiation device IR uses a wavelength that can deteriorate the separation layer 2. The deterioration of the separation layer 2 may be caused by (heat-generating or non-heat-generating) decomposition, cross-linking, change of stereo configuration or dissociation of functional groups (followed by the hardening, degassing, shrinkage or expansion of the separation layer 2) caused by the energy of the absorbed light L.

By causing the separation layer 2 to be degraded, the separation layer 2 is made to be in a state where it can be destroyed by a slight external force, or the bonding force between the separation layer 2 and the contacting layer (the support body 1 and the bonding layer 3) is reduced. In other words, the support body 1 is made to be separated from the substrate 4. In addition, in FIG. 7, the laminate 100 is reversed from the state shown in FIG. 6, that is, the support body 1 is made the upper side (the substrate 4 is made the lower side), and the light L is irradiated from the upper irradiation device IR toward the lower side, but it is not limited to this form. For example, the substrate 4 can also be made the upper side, and the light L can be irradiated from the lower side of the support body 1 by the irradiation device IR.

[Support body peeling process (step S06)] Next, in step S06, the support body is peeled off. FIG. 8 is a diagram showing the support body peeling process which is one of the processes of the manufacturing method of the electronic device. As shown in FIG. 8, by holding the substrate 4 while lifting the support body 1 with the substrate 4 as the lower side, the separation layer 2 is destroyed, and the support body 1 is peeled off from the substrate 4. That is, the substrate 4 and the support body 1 are pulled apart. The operation of lifting the support body 1 can also be performed using, for example, a device that lifts the support body 1 by suction. In addition, the substrate 4 is adsorbed on a stage or the like, and is pulled away from the support body 1 by lifting the support body 1 .

As shown in FIG. 8 , the substrate 4 from which the support 1 has been peeled has a bonding layer 3 remaining. On the surface 3a of the bonding layer 3, the residue 2a of the deteriorated separation layer 2 is not completely removed and remains. In addition, the residue 2a of the deteriorated separation layer 2 may enter the bonding layer 3. In this state, if a solvent element capable of dissolving the bonding layer 3 is used to dissolve and remove the bonding layer 3 while flowing on the surface 3a of the bonding layer 3, the bonding layer 3 may be dissolved, but all or part of the residue 2a of the separation layer 2 may remain in the bonding layer 3, and even after the bonding layer 3 is removed, the residue 2a may remain on the surface of the substrate 4. In this embodiment, the residue 2a is not left on the surface of the substrate 4 by the first cleaning process and the second cleaning process described later.

[First cleaning process (step S07)] In step S07, the substrate 4 with the bonding layer 3 remaining thereon is cleaned with the first cleaning liquid. FIG. 9 is a diagram showing the first cleaning process which is one of the processes in the method for manufacturing an electronic device. As shown in FIG. 9, with the bonding layer 3 facing upward, the first cleaning liquid R1 is supplied to the substrate 4 (bonding layer 3) from the nozzle 612. The first cleaning liquid R1 is supplied from above the approximate center of the substrate 4, flows on the bonding layer 3, and flows down from the edge of the substrate 4. In addition, the substrate 4 may be rotated around the vertical axis when the first cleaning liquid R1 is supplied. As the first cleaning solution R1, a liquid that dissolves a specific resin in the first solvent that can dissolve the bonding layer 3 can be used. The first solvent is a solvent that can dissolve the bonding agent composition contained in the bonding agent used when forming the bonding layer 3 in the aforementioned bonding layer forming process (step S02). First, the bonding agent composition is explained.

(Adhesive composition) As adhesive compositions, various adhesive compositions known in the art such as acrylic, novolac, naphthoquinone, hydrocarbon, polyimide, elastomer, and polysulfone can be cited. Also, adhesive compositions such as those containing thermoplastic resins, diluents, and other components such as additives can be cited. Among thermoplastic resins, any resin that exhibits adhesive strength can be used, for example, hydrocarbon resins, acrylic-styrene resins, maleimide resins, elastomer resins, polysulfone resins, etc., or combinations thereof can be appropriately used. In addition, the adhesive composition includes a diluent.

＜＜Hydrocarbon Resin＞＞ Hydrocarbon resin is a resin having a hydrocarbon skeleton and polymerized from a monomer composition. Examples of hydrocarbon resins include cycloolefin hydrocarbon polymers (hereinafter referred to as "resin (A)") and at least one resin selected from the group consisting of terpene resins, rosin-based resins, and petroleum resins (hereinafter referred to as "resin (B)"), but are not limited thereto.

As the resin (A), for example, a ring-opening polymer containing a monomer component of a cycloolefin monomer and an addition polymer obtained by addition polymerization of a monomer component containing a cycloolefin monomer can be suitably mentioned. The cycloolefin polymer may also contain a monomer copolymerizable with the cycloolefin monomer as a monomer unit.

Furthermore, as a monomer component constituting the resin (A), it is preferable to contain a cycloolefin monomer from the viewpoint of high heat resistance (low thermal decomposition, thermal weight loss). The ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is preferably 5 mol% or more, more preferably 10 mol% or more, and even more preferably 20 mol% or more. Furthermore, although the ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is not particularly limited, from the viewpoint of solubility and stability over time in the solution, it is preferably 80 mol% or less, and more preferably 70 mol% or less.

Furthermore, as a monomer component constituting the resin (A), a linear or branched olefin monomer may also be contained. From the viewpoint of solubility and softness, the ratio of the olefin monomer to the total monomer component constituting the resin (A) is preferably 10 to 90 mol%, more preferably 20 to 85 mol%, and even more preferably 30 to 80 mol%. In addition, the resin (A), for example, a resin having no polar group, such as a resin obtained by polymerizing a monomer component composed of a cycloolefin monomer and an olefin monomer, is ideal in terms of suppressing the generation of gas at high temperature. There is no particular limitation on the polymerization method or polymerization conditions when polymerizing the monomer components, and they can be appropriately set according to conventional methods.

Examples of commercially available cycloolefin polymers that can be used as the resin (A) include "TOPAS (trade name)" manufactured by Polyplastics Co., Ltd., "APEL (trade name)" manufactured by Mitsui Chemicals Co., Ltd., "ZEONOR (trade name)" manufactured by ZEON Co., Ltd., "ZEONEX (trade name)" manufactured by ZEON Co., Ltd., and "ARTON (trade name)" manufactured by JSR Co., Ltd. The glass transition temperature (Tg) of the resin (A) is preferably 60°C or higher, and particularly preferably 70°C or higher. When the glass transition temperature of the resin (A) is 60°C or higher, softening of the adhesive layer when exposed to a high temperature environment can be suppressed.

The resin (B) is at least one resin selected from the group consisting of terpene resins, rosin resins and petroleum resins. Specifically, the terpene resins include, for example, terpene resins, terpene phenol resins, modified terpene resins, hydrogenated terpene resins, hydrogenated terpene phenol resins, etc. The rosin resins include, for example, rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, modified rosin, etc. The petroleum resins include, for example, aliphatic or aromatic petroleum resins, hydrogenated petroleum resins, modified petroleum resins, alicyclic petroleum resins, benzofuran-indene petroleum resins, etc. Among these, hydrogenated terpene resins and hydrogenated petroleum resins are more preferred.

The softening point of the resin (B) is not particularly limited, but is preferably 80 to 160°C. If the softening point of the resin (B) is 80 to 160°C, softening when exposed to a high temperature environment can be suppressed, and poor adhesion will not occur. The weight average molecular weight of the resin (B) is not particularly limited, but is preferably 300 to 3,000. If the weight average molecular weight of the resin (B) is 300 or more, the heat resistance will be sufficient, and the amount of degassing in a high temperature environment will be reduced. On the other hand, if the weight average molecular weight of the resin (B) is 3,000 or less, the dissolution rate of the adhesive layer in a hydrocarbon solvent will be good. Therefore, the residue of the bonding layer on the device layer after the support body is separated can be quickly dissolved and removed. In addition, the weight average molecular weight of the resin (B) in this embodiment means the molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).

As the hydrocarbon resin, a mixture of resin (A) and resin (B) can be used. By mixing, the heat resistance becomes good. For example, the mixing ratio of resin (A) and resin (B) is (A): (B) = 80:20 to 55:45 (mass ratio), which is ideal because it has excellent heat resistance and flexibility in high temperature environments.

＜＜Acrylic-styrene resin＞＞ Acrylic-styrene resins include, for example, resins obtained by polymerizing styrene or a styrene derivative and (meth)acrylate as monomers.

Examples of (meth)acrylates include (meth)acrylate alkyl esters having a chain structure, (meth)acrylates having an aliphatic ring, and (meth)acrylates having an aromatic ring. Examples of (meth)acrylate alkyl esters having a chain structure include acrylic acid long-chain alkyl esters having an alkyl group having 15 to 20 carbon atoms, acrylic acid alkyl esters having an alkyl group having 1 to 14 carbon atoms, and the like. Examples of acrylic acid long-chain alkyl esters include acrylic acid or methacrylic acid alkyl esters having an alkyl group of n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, and the like. In addition, the alkyl group may be branched.

As the acrylic acid alkyl ester having an alkyl group with 1 to 14 carbon atoms, there can be listed well-known acrylic acid alkyl esters used in existing acrylic adhesives. For example, the alkyl group can be an acrylic acid or methacrylic acid alkyl ester composed of methyl, ethyl, propyl, butyl, 2-ethylhexyl, isooctyl, isononyl, isodecyl, dodecyl, lauryl, tridecyl, etc.

Examples of the (meth)acrylate having an aliphatic ring include cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, 1-adamantyl (meth)acrylate, norbornyl (meth)acrylate, isobornyl (meth)acrylate, tricyclodecyl (meth)acrylate, tetracyclododecyl (meth)acrylate, and dicyclopentyl (meth)acrylate. Among them, isobornyl methacrylate and dicyclopentyl (meth)acrylate are more preferred.

The (meth)acrylate having an aromatic ring is not particularly limited, but examples of the aromatic ring include phenyl, benzyl, The aromatic ring may be a linear or branched alkyl group having 1 to 5 carbon atoms. Specifically, phenoxyethyl acrylate is more preferred.

＜＜Maleimide resin＞＞ As maleimide resin, for example, N-methylmaleimide, N-ethylmaleimide, N-n-propylmaleimide, N-isopropylmaleimide, N-n-butylmaleimide, N-isobutylmaleimide, N-sec-butylmaleimide, N-tert-butylmaleimide, N-n-pentylmaleimide, N-n-hexylmaleimide, N-n-heptylmaleimide, N-n-octylmaleimide, N-laurylmaleimide, Resins obtained by polymerizing maleimides having an alkyl group such as maleimide, N-stearylmaleimide, maleimides having an aliphatic alkyl group such as N-cyclopropylmaleimide, N-cyclobutylmaleimide, N-cyclopentylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide, and aromatic maleimides having an aromatic group such as N-phenylmaleimide, N-m-methylphenylmaleimide, N-o-methylphenylmaleimide, and N-p-methylphenylmaleimide.

＜＜Elastomer resin＞＞ The elastomer resin (hereinafter, sometimes referred to as "elastomer") preferably includes a styrene unit as a structural unit of the main chain, and the "styrene unit" may also have a substituent. As the substituent, for example, an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an alkoxyalkyl group having 1 to 5 carbon atoms, an acetyloxy group, a carboxyl group, etc. are listed. Furthermore, it is more desirable that the content of the styrene unit is within the range of 14 weight % or more and 50 weight % or less. Furthermore, the elastomer preferably has a weight average molecular weight within the range of 10,000 or more and 200,000 or less.

As long as the content of the styrene unit is within the range of 14 wt% to 50 wt% and the weight average molecular weight of the elastomer is within the range of 10,000 to 200,000, it is easy to dissolve in the hydrocarbon solvent described below, so the adhesive layer can be removed more easily and quickly. In addition, by making the content of the styrene unit and the weight average molecular weight within the above range, excellent resistance is exerted to the anti-etching solvent (such as PGMEA, PGME, etc.), acid (hydrofluoric acid, etc.), and alkali (TMAH, etc.) used in the photolithography process.

In addition, the aforementioned (meth)acrylate may be further mixed in the elastomer. The content of the styrene unit is more preferably 17 wt % or more, and more preferably 40 wt % or less. The weight average molecular weight is more preferably 20,000 or more, and more preferably 150,000 or less.

As the elastomer, any of various elastomers may be used as long as the content of styrene units is in the range of 14 wt % to 50 wt % and the weight average molecular weight of the elastomer is in the range of 10,000 to 200,000. For example, polystyrene-poly(ethylene/propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene block copolymer (SBS), styrene-butadiene-butylene-styrene block copolymer (SBBS), and hydrogenated products thereof, styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer (SEEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer in which the styrene block is a reactive crosslinking type (Septon V9461 (manufactured by Kuraray Co., Ltd.), Septon V9475 (manufactured by Kuraray Co., Ltd.)), styrene-ethylene-butylene-styrene block copolymer in which the styrene block is a reactive crosslinking type (Septon V9827 having a reactive polystyrene hard block) (manufactured by Kuraray Co., Ltd.), polystyrene-poly(ethylene-ethylene/propylene) block-polystyrene block copolymer (SEEPS-OH: terminal hydroxyl group modification), etc., and the elastomer having a styrene unit content and a weight average molecular weight within the aforementioned range can be used.

Furthermore, among elastomers, hydrogenated products are more ideal. If it is a hydrogenated product, the thermal stability will be improved, and it is not easy to cause decomposition or polymerization. Moreover, from the perspective of solubility in hydrocarbon solvents and resistance to anti-corrosion solvents, it is also more ideal. Moreover, among elastomers, block polymers with styrene at both ends are more ideal. By blocking styrene with high thermal stability at both ends, higher heat resistance is exhibited. More specifically, as an elastomer, a hydrogenated product of a block copolymer of styrene and a covalent diene is more ideal. The thermal stability will be improved, and it is not easy to cause decomposition or polymerization. Moreover, by blocking styrene with high thermal stability at both ends, higher heat resistance is exhibited. Furthermore, it is more desirable from the viewpoint of solubility in hydrocarbon solvents and resistance to anti-corrosion solvents.

Examples of commercially available elastomers that can be used as the elastomer included in the adhesive composition include "Septon (trade name)" manufactured by Kuraray Co., Ltd., "HYBRAR (trade name)" manufactured by Kuraray Co., Ltd., "Tuftec (trade name)" manufactured by Asahi Kasei Co., Ltd., and "DYNARON (trade name)" manufactured by JSR Co., Ltd.

The content of the elastomer contained in the adhesive composition is, for example, preferably 50 parts by weight or more and 99 parts by weight or less, more preferably 60 parts by weight or more and 99 parts by weight or less, and most preferably 70 parts by weight or more and 95 parts by weight or less, based on 100 parts by weight of the total amount of the adhesive composition. By setting the content within these ranges, the substrate can be properly fixed to the support while maintaining heat resistance.

Furthermore, multiple elastomers may be mixed. That is, the adhesive composition may include multiple elastomers. Furthermore, as long as at least one of the multiple elastomers contains a styrene unit as a structural unit of the main chain, it will be sufficient. Furthermore, as long as at least one of the multiple elastomers has a styrene unit content of more than 14% by weight and less than 50% by weight, or a weight average molecular weight of more than 10,000 and less than 200,000, it is within the scope of the present invention. Furthermore, in the case where multiple elastomers are included in the adhesive composition, it can be adjusted in such a way that the content of styrene units after mixing is within the above-mentioned range. For example, if Septon 4033 of Septon (trade name) manufactured by Kuraray Co., Ltd., which has a styrene unit content of 30% by weight, and Septon 2063 of Septon (trade name) with a styrene unit content of 13% by weight are mixed in a weight ratio of 1:1, the styrene content becomes 21 to 22% by weight relative to the entire elastomer contained in the adhesive, and thus becomes more than 14% by weight. For example, if a styrene unit of 10% by weight and a styrene unit of 60% by weight are mixed in a weight ratio of 1:1, it becomes 35% by weight, which is within the above range. The present invention can also be in such a form. In addition, it is ideal that all of the multiple elastomers contained in the adhesive composition contain styrene units within the above range and have a weight average molecular weight within the above range.

＜＜Polysulfate resin＞＞ The adhesive composition may also include a polysulfate resin. By forming the adhesive layer 3 with a polysulfate resin, even if a high temperature treatment is performed when forming the sealing mold 42 in the substrate forming process, the adhesive layer 3 can be dissolved in the subsequent process and the substrate 4 can be peeled off from the support 1. If the adhesive layer 3 contains a polysulfate resin, a high temperature process such as a high temperature of 300°C or more can be used in the substrate forming process. The polysulfate resin has a structure composed of at least one structural unit represented by the following general formula (ad1) and the structural unit represented by the following general formula (ad2).

[In the formula, R ^C3 , R ^C4 , and R ^C5 are each independently selected from the group consisting of phenylene, naphthylene, and anthracene, and X' is an alkylene group having 1 to 3 carbon atoms.]

The polysulfide resin has at least one of the polysulfide structural unit represented by the above formula (ad1) and the polyethersulfide structural unit represented by the above formula (ad2). Thus, after the bonding layer is formed on the support, even if it is treated under high temperature conditions, it is possible to prevent the bonding layer from becoming insoluble due to decomposition and polymerization. In addition, the polysulfide resin is stable even when heated to a higher temperature as long as it is a polysulfide structural unit represented by the above formula (ad1).

The weight average molecular weight (Mw) of the polysulfone resin is preferably in the range of 30,000 to 70,000, and more preferably in the range of 30,000 to 50,000. If the weight average molecular weight (Mw) of the polysulfone resin is in the range of 30,000 or more, an adhesive composition that can be used at a high temperature of, for example, 300°C or more can be obtained. Furthermore, if the weight average molecular weight (Mw) of the polysulfone resin is in the range of 70,000 or less, it can be suitably dissolved by a solvent. In other words, an adhesive composition that can be suitably removed by a solvent can be obtained.

＜＜Diluting solvent＞＞ As the diluting solvent, there can be cited, for example, straight chain hydrocarbons such as hexane, heptane, octane, nonane, isononane, methyloctane, decane, undecane, dodecane, tridecane, branched chain hydrocarbons with carbon numbers of 4 to 15, for example, cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene, tetrahydronaphthalene, p-menthane, o-menthane, m-menthane, diphenylmenthane, 1,4-terpene glycol, 1,8-terpene glycol, camphane, norbornane, pinane, cypressane, carane, long-chain hydrocarbons such as ... etc. Terpene solvents such as phylloxetine, geraniol, nerol, linalool, limonal, citronellol, menthol, isomenthol, neomenthol, α-terpineol, β-terpineol, γ-terpineol, terpinene-1-ol, terpinene-4-ol, dihydroabietol acetate, 1,4-cineole, 1,8-cineole, borneol, cyperone, ionone, cyperone, camphor, d-limonene, l-limonene, dipentene, etc.; lactones such as γ-butyrolactone; acetone, methyl ethyl ketone, cyclohexanone (CH), methyl Ketones such as methyl-n-amyl ketone, methyl isoamyl ketone, 2-heptanone, etc.; polyols such as ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol, etc.; compounds having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate, derivatives of polyols such as monoalkyl ethers such as monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether, etc. of the aforementioned polyols or compounds having an ester bond, or compounds having an ether bond such as monophenyl ether, etc. (among the above) , preferably propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME); cyclic ethers such as dioxane, or esters such as methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxybutyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate, etc.; aromatic organic solvents such as anisole, ethyl benzyl ether, cresol methyl ether, diphenyl ether, dibenzyl ether, phenethyl ether, butyl phenyl ether, etc., etc. Moreover, a plurality of these can be mixed and used.

The adhesive composition may contain additives. In addition, other miscible substances may be added to the adhesive composition within the range that does not damage the essential properties. As such additives, for example, various commonly used additives such as addition resins, curing monomers, polymerization inhibitors, polymerization initiators, plasticizers, adhesive auxiliary agents, stabilizers, colorants, and surfactants for improving the performance of the adhesive may be used.

(Specific resin) The specific resin dissolved in the first cleaning solution R1 is described below. The specific resin may be, for example, a resin contained in the above-mentioned adhesive composition. In addition, as the specific resin, a resin soluble in the first solvent described later may be selected. The specific resin may be the same resin as the resin contained in the adhesive used to form the adhesive layer 3, or a different resin. In addition, the specific resin may be a single type of resin or a mixture of multiple types of resins.

The content (weight %) of the specific resin in the first cleaning liquid R1 is preferably smaller than the content (weight %) of the resin in the adhesive used when forming the bonding layer 3. The reason is that if the content (weight %) of the specific resin in the first cleaning liquid R1 is larger than the content (weight %) of the resin contained in the adhesive used when forming the bonding layer 3, the bonding layer 3 is dissolved and removed by the first cleaning liquid R1, while a large amount of the specific resin contained in the first cleaning liquid R1 will remain on the substrate 4. In addition, the specific resin is preferably contained in the first cleaning liquid R1 at 3 to 5 weight %. If the specific resin is less than 3 weight %, the possibility of residue 2a of the separation layer 2 remaining on the substrate 4a increases.

(First solvent) The first solvent is a solvent that can dissolve the bonding layer 3, that is, a solvent that dissolves the bonding agent composition that forms the bonding layer 3. The first solvent is not particularly limited as long as it can dissolve the bonding layer 3, and can be appropriately selected according to the bonding layer 3 (bonding agent composition). The first solvent can be, for example, a solvent that has the same polarity as or a similar polarity as the dilution solvent used for the bonding agent when forming the bonding layer 3. In addition, it can also be the same as the dilution solvent used for the bonding agent when forming the bonding layer 3. As the first solvent capable of dissolving the bonding layer 3, for example, hydrocarbon solvents and ester solvents can be cited. In addition, arbitrary components such as additives can be appropriately added to the first solvent. The arbitrary components are not particularly limited, but for example, surfactants can be cited. In addition, a mixture of hydrocarbon solvents and ester solvents can also be used. In addition, the first solvent can be a single type of solvent or a mixture of multiple types of solvents.

＜＜Hydrocarbon solvent＞＞ Hydrocarbon solvents can be aliphatic hydrocarbon solvents or aromatic hydrocarbon solvents. Here, "aliphatic" is a relative concept to aromatics, and means groups and compounds that do not have aromatic properties. Examples of aliphatic hydrocarbon solvents include alkane-based hydrocarbon solvents. Alkane-based hydrocarbon solvents can be straight chain, branched chain, or cyclic. Examples of the hydrocarbon solvent of a linear or branched chain alkane include linear or branched chain alkanes having 4 to 20 carbon atoms, such as butane, pentane, 2-methylbutane, 3-methylpentane, hexane, 2,2-dimethylbutane, 2,3-dimethylbutane, heptane, octane, 2,2,4-trimethylpentane, 2,2,3-trimethylhexane, nonane, isononane, methyloctane, decane, undecane, dodecane, 2,2,4,6,6-pentamethylheptane, tridecane, pentadecane, tetradecane, hexadecane, and the like. Examples of cyclic alkane hydrocarbon solvents include cycloalkanes having 4 to 20 carbon atoms, such as monocyclic alkanes such as cyclopentane, cyclohexane, methylcyclohexane, ethylcyclohexane, cycloheptane, and cyclooctane, and dicyclic alkanes such as decahydronaphthalene. Among these, ethylcyclohexane and decahydronaphthalene are more preferred as alkane hydrocarbon solvents. Examples of aliphatic hydrocarbon solvents include terpene hydrocarbon solvents. Examples of terpene hydrocarbon solvents include D-limonene and P-menthane.

Examples of aromatic hydrocarbon solvents include benzene, naphthalene, and tetrahydronaphthalene. In addition, the hydrocarbon solvent is preferably distilled to remove impurities having a higher boiling point than the hydrocarbon solvent. This prevents the high-boiling impurities contained in the hydrocarbon solvent from remaining as residues on the substrate 4 when the adhesive is removed by washing.

＜＜Ester solvent＞＞ Ester solvents include, for example, methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxybutyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate, propylene glycol monomethyl ether acetate (PGMEA), etc.

In this first cleaning process, the bonding layer 3 is dissolved and removed by the first cleaning liquid R1, and a specific resin dissolved in the first cleaning liquid R1 is applied. The residue 2a of the separation layer 2 remaining on the surface 3a of the bonding layer 3 or in the bonding layer 3 is washed away from the bonding layer 3 (substrate 4) by the flow of the first cleaning liquid R1, and the specific resin of the first cleaning liquid R1 suppresses the adhesion to the substrate 4. As a result, the residue 2a can be prevented from remaining on the surface of the substrate 4 after the bonding layer 3 disappears. After the first cleaning process, a specific resin of the first cleaning solution R1 remains on the surface of the substrate 4, and a layer (film) caused by the resin is formed.

FIG. 10 is a diagram showing the state of the substrate 4 after the first cleaning process. As shown in FIG. 10, a resin layer 5 is formed on the surface 4a of the substrate 4 by a specific resin of the first cleaning solution R1. That is, the successive layer 3 is dissolved and removed from the surface 4a of the substrate 4, and the residue 2a of the separation layer 2 is also removed, but the resin layer 5 is formed by the first cleaning solution R1.

[Second cleaning process (step S08)] Next, in step S08, the substrate 4 on which the resin layer 5 is formed is cleaned with the second cleaning liquid. FIG. 11 is a diagram showing the second cleaning process which is one of the processes in the method for manufacturing an electronic device. As shown in FIG. 11, with the resin layer 5 facing upward, the second cleaning liquid R2 is supplied to the substrate 4 (resin layer 5) from the nozzle 622. The second cleaning liquid R2 is supplied from above the approximate center of the substrate 4, flows on the resin layer 5, and flows down from the edge of the substrate 4. In addition, the substrate 4 may be rotated around the vertical axis when the second cleaning liquid R2 is supplied. As the second cleaning solution R2, a second solvent capable of dissolving the resin layer 5 may be used.

(Second solvent) The second solvent can be a solvent that can dissolve the resin layer 5. The second solvent is not particularly limited as long as it can dissolve the resin layer 5, and can be appropriately selected according to the composition of the resin layer 5. The second solvent can be a solvent that has the same polarity as the first solvent or a solvent that has a similar polarity. That is, the second solvent can dissolve the bonding layer 3. The second solvent can be the same as or different from the first solvent described above. In addition, since the second solvent has the same polarity as or a similar polarity to the first solvent, it can also be the same as the diluting solvent of the bonding agent used when forming the bonding layer 3. The second solvent may be a single type of solvent or a mixture of plural types of solvents.

In this second cleaning process, the resin layer 5 is dissolved and removed by the second cleaning liquid R2. In addition, as the second cleaning liquid R2, it is more ideal to be a cleaning liquid that does not dissolve resin or has a low concentration of resin, so that after the resin layer 5 is removed, it is not easy to form a new layer (film) on the substrate 4. That is, the solid component concentration of this cleaning liquid is preferably set to less than 0.5 weight%, more preferably set to less than 0.3 weight%, and more preferably set to less than 0.1 weight%. Figure 12 is a diagram showing the state of the substrate 4 after the second cleaning process. As shown in FIG. 12 , a resin layer 5 is formed on the surface 4a of the substrate 4 by a specific resin of the first cleaning solution R1. That is, the resin layer 5 is dissolved and removed from the surface 4a of the substrate 4, and no new layer is formed. In addition, even if some residue 2a of the separation layer 2 remains on the substrate 4 after the first cleaning process, it may be removed from the substrate 4 by the second cleaning process.

After the second cleaning step, for example, the substrate 4 is cut along a pre-set line to obtain individual electronic devices. Any device can be used as the cutting device.

<Substrate cleaning device> Figure 13 is a diagram showing one example of a substrate cleaning device in an implementation form. The substrate cleaning device 6 shown in Figure 13 can perform the above-mentioned first cleaning process and second cleaning process. As shown in Figure 13, the substrate cleaning device 6 has a first cleaning section 61, a second cleaning section 62, and a platform 63. In addition, the platform 63 is shared by the first cleaning section 61 and the second cleaning section 62. In addition, the platform 63 can also have an adsorption mechanism for holding the substrate 4 placed thereon. In addition, the platform 63 can also be a structure that rotates around a vertical axis by a driving source such as an electric motor.

The first cleaning section 61 is provided for performing the first cleaning process described above. The first cleaning section 61 includes a first cleaning liquid supply device 611 and a nozzle 612. The first cleaning liquid supply device 611 supplies the first cleaning liquid R1 (see FIG. 9 ) to the nozzle 612. The first cleaning liquid supply device 611 is formed as a liquid delivery mechanism including a pump, etc., and by driving the liquid delivery mechanism, the first cleaning liquid R1 is supplied to the nozzle 612 from a tank storing the first cleaning liquid R1 through a pipe. The nozzle 612 is disposed on the platform 63 and discharges downward the first cleaning liquid R1 sent from the first cleaning liquid supply device 611. In addition, the nozzle 612 may be movable in the horizontal direction.

In the first cleaning section 61, the first cleaning liquid R1 is ejected from the nozzle 612 while the substrate 4 is placed on the platform 63, thereby supplying the first cleaning liquid R1 to the substrate 4 and performing the first cleaning process. In addition, the substrate 4 is moved in and out of the platform 63 by a transport device not shown.

The second cleaning section 62 is provided for performing the second cleaning process described above. The second cleaning section 62 includes a second cleaning liquid supply device 621 and a nozzle 622. The second cleaning liquid supply device 621 supplies the second cleaning liquid R2 (see FIG. 11 ) to the nozzle 622. The second cleaning liquid supply device 621 is formed as a liquid delivery mechanism including a pump, etc., and by driving the liquid delivery mechanism, the second cleaning liquid R2 is supplied to the nozzle 622 from a tank storing the second cleaning liquid R2 through a pipe. The nozzle 622 is disposed on the platform 63 and discharges downward the second cleaning liquid R2 sent from the second cleaning liquid supply device 621. In addition, the nozzle 622 may be movable in the horizontal direction.

In the second cleaning section 62, the second cleaning liquid R2 is ejected from the nozzle 622 while the substrate 4 is placed on the platform 63, thereby supplying the second cleaning liquid R2 to the substrate 4 and performing the above-mentioned second cleaning process. In addition, the substrate cleaning device 6 uses the dedicated nozzles 611 and 621 for the first cleaning liquid R1 and the second cleaning liquid R2. Therefore, the nozzle 611 can be arranged above the center of the substrate 4 when performing the first cleaning process, and the nozzle 621 can be arranged above the center of the substrate 4 after the nozzle 611 is retreated when performing the second cleaning process, and can be controlled by a control device not shown.

FIG. 14 is a diagram showing another example of a substrate cleaning device of an implementation form. The substrate cleaning device 6A shown in FIG. 14 can perform the first cleaning process and the second cleaning process described above. In addition, the same symbols are used for the same components as the above-mentioned substrate cleaning device 6, and the description thereof is omitted or simplified. As shown in FIG. 14, the substrate cleaning device 6A has a first cleaning section 61, a second cleaning section 62, a platform 63, and a switching section 64.

The first cleaning section 61 and the second cleaning section 62 are provided with a common nozzle 641. The nozzle 641 is arranged above the center of the substrate 4 placed on the platform 63. In addition, the nozzle 641 may be movable in the horizontal direction. The switching section 64 switches between the flow path for supplying the first cleaning liquid R1 from the first cleaning liquid supply device 611 of the first cleaning section 61 to the nozzle 641 and the flow path for supplying the second cleaning liquid R2 from the second cleaning liquid supply device 621 of the second cleaning section 62 to the nozzle 641. Therefore, when the first cleaning process is performed, the first cleaning liquid R1 is ejected from the nozzle 641 by the switching unit 64, and when the second cleaning process is performed, the flow path is switched by the switching unit 64 to eject the second cleaning liquid R2 from the nozzle 641. The switching of the flow path by the switching unit 64 can also be controlled by a control device not shown.

In addition, in the above-mentioned substrate cleaning apparatus 6, 6A, although the first cleaning section 61 and the second cleaning section 62 use a common platform 63, the configuration is not limited to this. For example, it is also possible to have a configuration such that two platforms 63 are arranged, one of which is a platform 63 dedicated to the first cleaning section 61, and the other is a general configuration for the second cleaning section 62. In addition, the above-mentioned first cleaning process and second cleaning process can also be performed by separate substrate cleaning apparatuses.

<Substrate cleaning kit> The kit of this embodiment is used to deteriorate the separation layer 2 in the layered body 100 in which the support body 1, the separation layer 2, the bonding layer 3 and the substrate 4 are sequentially stacked, and to clean the substrate 4 separated from the support body 1. The substrate cleaning kit includes: a first cleaning liquid R1, which is a first solvent that dissolves the bonding layer 3 by dissolving a specific resin, and is used to clean the substrate 4, and a second cleaning liquid R2, which is used to clean the substrate 4 after cleaning with the first cleaning liquid R1, and has a second solvent that dissolves the bonding layer 3. This substrate cleaning kit can be used in the above-mentioned substrate cleaning method.

In this way, according to this embodiment, by performing the first cleaning process and the second cleaning process after the support body 2 is peeled off from the substrate 4, most of the residue 2a remaining on the surface 3a of the bonding layer 3 and in the bonding layer 3 can be removed from the substrate 4. As a result, since the unnecessary residue 2a on the substrate 4 is extremely small, the subsequent process can be performed with good precision, and the quality of the electronic device can be prevented from being reduced. [Example]

Next, although the embodiments are described, the present invention is not limited to the embodiments. ・Formation of laminated body First, the separation layer forming composition is spin-coated on the support substrate and heated at 90°C for 300 seconds to form a film. Then, the formed film is fired at 300°C for 10 minutes in an atmospheric environment to form a separation layer with a thickness of 0.3μm on the support. Next, the adhesive composition was spin-coated on the separation layer and heated at 90°C for 4 minutes, 160°C for 4 minutes, and 220°C for 4 minutes, thereby forming a 50μm thick adhesive layer on the separation layer. Then, a silicon substrate was pressed onto the adhesive layer using a die bonder to obtain a laminate.

The following are used in the separation layer forming composition. TZNR (registered trademark)-CTRL9 (manufactured by Tokyo Ohka Industry Co., Ltd.): Resin having an aminophenol skeleton (GSP-01, GSP-02 (manufactured by Qun-Rong Chemical Industry Co., Ltd.)) The following are used in the adhesive composition. TZNR (registered trademark)-A4017 (manufactured by Tokyo Ohka Industry Co., Ltd.): Elastomer adhesive containing H1051 (manufactured by Asahi Kasei Co., Ltd.) and Septon 2002 (manufactured by Kuraray Co., Ltd.).

・Support peeling From the support side of the above-mentioned laminate, the separation layer was irradiated with laser light of wavelength 532nm under the conditions of scanning speed 6400mm/sec, frequency 40kHz, output (current value) 22A, and irradiation pitch 180μm. Then, the support was peeled off from the substrate of the laminate.

・First cleaning process As the first solvent of the first cleaning solution, three types of solvents were used: "a mixture of decahydronaphthalene and butyl acetate", "a mixture of butyl acetate and p-menthane", and "p-menthane". As the specific resin, "Septon 2002 (manufactured by Kuraray Co., Ltd.), a styrene-based thermoplastic elastomer as an adhesive component, was dissolved in the three types of first solvents in a concentration of 3 wt%, 3.5 wt%, and 5 wt% relative to the first cleaning solution, respectively.

Each of the first cleaning solutions prepared as described above was applied to the substrate after the support was peeled off, and was paddle-cleaned for 1 minute and spin-cleaned for 1 minute at a flow rate of 90 g/min, and then dried for 1 minute.

・Second cleaning process Each substrate that has been subjected to the first cleaning process is cleaned with a second cleaning solution containing a second solvent. The second solvent of the second cleaning solution is the same as the first solvent. That is, when the first solvent of the first cleaning solution is a "mixed solution of decahydronaphthalene and butyl acetate", the second solvent of the second cleaning solution is a "mixed solution of decahydronaphthalene and butyl acetate". Furthermore, when the first solvent of the first cleaning solution is a "mixed solution of butyl acetate and p-menthane", the second solvent of the second cleaning solution is a "mixed solution of butyl acetate and p-menthane". Furthermore, when the first solvent of the first cleaning solution is "p-menthane", "p-menthane" is used as the second solvent of the second cleaning solution.

The cleaning process with the second cleaning liquid was paddle cleaning for 1 minute and rotary cleaning for 1 minute at a flow rate of 90 g/min. After that, drying was performed for 1 minute. After the second cleaning process, the residues (diameter of 10 μm or more) remaining on the surface of the substrate were measured and evaluated by a particle counter. The evaluation results are shown in Table 1. In Table 1, the symbol ○ represents that the residues are less than 30, and the symbol × represents that the residues are more than 31. In addition, in Table 1, - represents that it is not measured.

[Table 1] Concentration mixed solution 3% 3.5% 5% Decahydronaphthalene and butyl acetate ○ ○ ○ Butyl acetate and p-menthane - ○ - p-menthane - - ○

(Comparative example) For the substrate after the support body was peeled off, three types of cleaning liquids were used: "a mixture of decahydronaphthalene and butyl acetate", "a mixture of butyl acetate and p-menthane", and "p-menthane". The cleaning liquid was used for paddle cleaning at a flow rate of 90 g/min for 1 minute and rotary cleaning for 1 minute. Thereafter, drying was performed for 1 minute. After cleaning, the residue (diameter of 10 μm or more) remaining on the surface of the substrate was measured and evaluated by a particle counter. The evaluation results are shown in Table 2. In Table 2, the symbol ○ represents that the number of residues is 30 or less, and the symbol × represents that the number of residues is 31 or more. In addition, in the cleaning solution of the comparative example, since the resin is not dissolved, the concentration is indicated as 0%.

[Table 2] Concentration mixed solution 0% Decahydronaphthalene and butyl acetate × Butyl acetate and p-menthane × p-menthane ×

As shown in Table 2, it was confirmed that when "a mixture of decahydronaphthalene and butyl acetate", "a mixture of butyl acetate and p-menthane", and "p-menthane" were used as single substances, the number of residues with a diameter of 10 μm or more remaining on the surface of the substrate was 31 or more. On the other hand, as shown in Table 1, it was confirmed that when the first cleaning process was performed using a first cleaning solution in which Septon 2002 was dissolved at a concentration of 3 to 5 wt % in each of the three first solvents, and then the first cleaning process was performed using a second cleaning solution having the same second solvent as the first solvent, the number of residues with a diameter of 10 μm or more remaining on the surface of the substrate was 30 or less.

Although the above description is made with respect to the implementation forms and embodiments, the present invention is not limited to the above description, and various modifications can be made within the scope of the gist of the present invention. For example, in the above implementation forms, the method of forming the integrated circuit 100 (100A) is just one example, and the integrated circuit 100 (100A) can also be formed by other methods.

1: Support body 2: Separation layer 2a: Residue 3: Adhesion layer 3a: Surface 4,4A: Substrate 41: Electronic components 41a: Top 42: Mold sealing 42a,42b: Top 5: Resin layer 6,6A: Substrate cleaning device 61: First cleaning section 611: First cleaning liquid supply device 612: Nozzle 62: Second cleaning section 621: Second cleaning liquid supply device 622: Nozzle 64: Switching section 641: Nozzle

[FIG. 1] is a flow chart of one example of a substrate cleaning method including an implementation form. [FIG. 2] is a diagram showing one process of a method for manufacturing an electronic device. [FIG. 3] is a diagram showing one process of a method for manufacturing an electronic device following FIG. 2. [FIG. 4] is a diagram showing one process of a method for manufacturing an electronic device following FIG. 3. [FIG. 5] is a diagram showing one process of a method for manufacturing an electronic device following FIG. 4. [FIG. 6] is a diagram showing one process of a method for manufacturing an electronic device following FIG. 5. [FIG. 7] is a diagram showing one process of a method for manufacturing an electronic device following FIG. 6. [FIG. 8] is a diagram showing one of the processes of the method for manufacturing an electronic device, following FIG. 7. [FIG. 9] is a diagram showing the first cleaning process. [FIG. 10] is a diagram showing the state of the substrate after the first cleaning process. [FIG. 11] is a diagram showing the second cleaning process. [FIG. 12] is a diagram showing the state of the substrate after the second cleaning process. [FIG. 13] is a diagram showing one example of a substrate cleaning device in an implementation form. [FIG. 14] is a diagram showing another example of a substrate cleaning device in an implementation form.

Claims (13)

A substrate cleaning method is to deteriorate the separation layer in a laminate having a support body, a separation layer, a bonding layer and a substrate stacked in sequence, and to clean the substrate separated from the support body. The substrate cleaning method comprises: a first cleaning step of dissolving a resin contained in a bonding agent used in forming the bonding layer in a first cleaning liquid in a first solvent capable of dissolving the bonding layer. The substrate is cleaned and the second cleaning process is performed after the first cleaning process, by using a second cleaning liquid having a second solvent that can dissolve the bonding layer to clean the substrate. The resin contained in the bonding agent used in the formation of the bonding layer is contained in the first cleaning liquid at 3-5% by weight, and the solid content concentration of the second cleaning liquid is less than 0.5% by weight. A substrate cleaning method as described in claim 1, wherein the substrate includes electronic components. The substrate cleaning method as described in claim 1 or claim 2, wherein the separation layer is degraded by irradiation with light, the separation layer is degraded by irradiating the layer stack with the light, and the first cleaning process is performed on the substrate separated from the support. A substrate cleaning method as described in claim 1 or claim 2, wherein, the aforementioned bonding layer in the aforementioned laminate is formed by applying and drying a solution containing a bonding agent, and one or both of the aforementioned first solvent and the aforementioned second solvent have the same polarity or a similar polarity to the solvent of the aforementioned solution used to form the aforementioned bonding layer. A substrate cleaning method as described in claim 4, wherein one or both of the first solvent and the second solvent are the same as the solvent of the solution. A substrate cleaning method as described in claim 1 or claim 2, wherein one or both of the first cleaning solution and the second cleaning solution contain a hydrocarbon solvent. The substrate cleaning method described in claim 6, wherein one or both of the first cleaning solution and the second cleaning solution further include an ester solvent in addition to the hydrocarbon solvent. The substrate cleaning method described in claim 1 or claim 2, wherein the specific resin is a styrene-based thermoplastic elastomer or a cyclic olefin copolymer. A substrate cleaning method is to deteriorate the separation layer in a laminate having a support body, a separation layer, a bonding layer and a substrate stacked in sequence, and to clean the substrate separated from the support body. The substrate cleaning method comprises: a first cleaning step, in which the substrate is cleaned by a first cleaning liquid, wherein the first cleaning liquid is a smaller amount than the resin contained in the adhesive used in forming the bonding layer. The resin contained in the adhesive used in the formation of the adhesive layer is dissolved in the first solvent that can dissolve the aforementioned adhesive layer, and the second cleaning process is to clean the aforementioned substrate with the second cleaning liquid after the aforementioned first cleaning process. The second cleaning liquid has a second solvent that can dissolve the aforementioned adhesive layer and the resin layer formed on the aforementioned substrate by the resin contained in the adhesive used in the formation of the aforementioned adhesive layer, and the solid content concentration is less than 0.5% by weight. A substrate cleaning device is provided for cleaning the substrate separated from the support body by causing the separation layer in a laminated body in which a support body, a separation layer, a bonding layer and a substrate are sequentially stacked to deteriorate. The substrate cleaning device comprises: a first cleaning section for cleaning the substrate by using a first cleaning liquid, wherein the first cleaning liquid dissolves a resin contained in a bonding agent used in forming the bonding layer in a soluble The first solvent of the bonding layer and the second cleaning part are to clean the substrate after the first cleaning process by using a second cleaning liquid having a second solvent that can dissolve the bonding layer. The resin contained in the bonding agent used in the formation of the bonding layer is contained in the first cleaning liquid at a concentration of 3-5% by weight, and the solid content concentration of the second cleaning liquid is less than 0.5% by weight. A substrate cleaning device is provided for cleaning the substrate separated from the support body by causing the separation layer in a laminated body in which a support body, a separation layer, a bonding layer and a substrate are sequentially stacked to deteriorate. The substrate cleaning device comprises: a first cleaning section for cleaning the substrate by using a first cleaning liquid, wherein the first cleaning liquid is a smaller amount than the resin contained in the bonding agent used in forming the bonding layer. The resin contained in the adhesive used in the formation of the adhesive layer is dissolved in the first solvent that can dissolve the aforementioned adhesive layer, and the second cleaning part is to clean the aforementioned substrate with the second cleaning liquid after the aforementioned first cleaning process. The second cleaning liquid has a second solvent that can dissolve the aforementioned adhesive layer and the resin layer formed on the aforementioned substrate by the resin contained in the adhesive used in the formation of the aforementioned adhesive layer, and the solid content concentration is less than 0.5 weight%. A substrate cleaning kit is used to clean the substrate separated from the support body in order to prevent the separation layer from being deteriorated in a laminated body including a support body, a separation layer, a bonding layer and a substrate. The substrate cleaning kit comprises: a first cleaning liquid, which is a resin contained in a bonding agent used in forming the bonding layer dissolved in a first solvent capable of dissolving the bonding layer, so as to clean the substrate. The substrate is cleaned by the second cleaning liquid, which is used after the cleaning by the first cleaning liquid, and has a second solvent capable of dissolving the bonding layer, and is used to clean the substrate. The resin contained in the bonding agent used in the formation of the bonding layer is contained in the first cleaning liquid at a concentration of 3-5% by weight, and the solid content concentration of the second cleaning liquid is less than 0.5% by weight. A substrate cleaning kit is used to clean the substrate separated from the support body in order to prevent the separation layer from being deteriorated in a laminated body including a support body, a separation layer, a bonding layer and a substrate. The substrate cleaning kit comprises: a first cleaning liquid, which is a smaller amount of a resin contained in an adhesive used in forming the bonding layer than in an amount of a resin contained in an adhesive used in forming the bonding layer; The resin contained therein is dissolved in the first solvent capable of dissolving the aforementioned bonding layer, and the second cleaning liquid is used to clean the aforementioned substrate after cleaning with the aforementioned first cleaning liquid, and has a second solvent capable of dissolving the aforementioned bonding layer and a resin layer formed on the aforementioned substrate by the resin contained in the bonding agent used in forming the aforementioned bonding layer, and the solid content concentration is 0.5% by weight or less.

Images