TW201903212A - Surface treated copper foil and copper clad laminate using the same - Google Patents
Surface treated copper foil and copper clad laminate using the same Download PDFInfo
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- TW201903212A TW201903212A TW107110690A TW107110690A TW201903212A TW 201903212 A TW201903212 A TW 201903212A TW 107110690 A TW107110690 A TW 107110690A TW 107110690 A TW107110690 A TW 107110690A TW 201903212 A TW201903212 A TW 201903212A
- Authority
- TW
- Taiwan
- Prior art keywords
- copper foil
- laser
- treated copper
- pinholes
- foil
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 163
- 239000011889 copper foil Substances 0.000 title claims abstract description 149
- 239000010949 copper Substances 0.000 title description 15
- 229910052802 copper Inorganic materials 0.000 title description 14
- 239000011888 foil Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 238000005868 electrolysis reaction Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 abstract description 25
- 238000010438 heat treatment Methods 0.000 abstract description 17
- 239000010410 layer Substances 0.000 description 75
- 238000011282 treatment Methods 0.000 description 35
- 238000000034 method Methods 0.000 description 34
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 28
- 230000000052 comparative effect Effects 0.000 description 27
- 238000007747 plating Methods 0.000 description 20
- 239000011347 resin Substances 0.000 description 17
- 229920005989 resin Polymers 0.000 description 17
- 229910052759 nickel Inorganic materials 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 13
- 238000001556 precipitation Methods 0.000 description 13
- 229910052725 zinc Inorganic materials 0.000 description 13
- 239000011701 zinc Substances 0.000 description 13
- 101001134276 Homo sapiens S-methyl-5'-thioadenosine phosphorylase Proteins 0.000 description 11
- 102100022050 Protein canopy homolog 2 Human genes 0.000 description 11
- 238000007788 roughening Methods 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000009467 reduction Effects 0.000 description 10
- 229910000077 silane Inorganic materials 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 230000037303 wrinkles Effects 0.000 description 8
- 238000006087 Brown hydroboration reaction Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 239000006087 Silane Coupling Agent Substances 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 150000004756 silanes Chemical class 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000002738 chelating agent Substances 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 2
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 241000784732 Lycaena phlaeas Species 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- MNOILHPDHOHILI-UHFFFAOYSA-N Tetramethylthiourea Chemical compound CN(C)C(=S)N(C)C MNOILHPDHOHILI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229940071826 hydroxyethyl cellulose Drugs 0.000 description 2
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 1
- KHJWSKNOMFJTDN-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KHJWSKNOMFJTDN-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PDQAZBWRQCGBEV-UHFFFAOYSA-N Ethylenethiourea Chemical compound S=C1NCCN1 PDQAZBWRQCGBEV-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- BQJTUDIVKSVBDU-UHFFFAOYSA-L copper;sulfuric acid;sulfate Chemical compound [Cu+2].OS(O)(=O)=O.[O-]S([O-])(=O)=O BQJTUDIVKSVBDU-UHFFFAOYSA-L 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000176 sodium gluconate Substances 0.000 description 1
- 235000012207 sodium gluconate Nutrition 0.000 description 1
- 229940005574 sodium gluconate Drugs 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- RZLVQBNCHSJZPX-UHFFFAOYSA-L zinc sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Zn+2].[O-]S([O-])(=O)=O RZLVQBNCHSJZPX-UHFFFAOYSA-L 0.000 description 1
- NDKWCCLKSWNDBG-UHFFFAOYSA-N zinc;dioxido(dioxo)chromium Chemical compound [Zn+2].[O-][Cr]([O-])(=O)=O NDKWCCLKSWNDBG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
本發明係關於一種表面處理銅箔及使用該銅箔之覆銅積層板,該表面處理銅箔適於具有高密度配線電路(精細圖案)之印刷配線板,且雷射加工性優異。The present invention relates to a surface-treated copper foil and a copper-clad laminated board using the same. The surface-treated copper foil is suitable for a printed wiring board having a high-density wiring circuit (fine pattern) and has excellent laser processability.
印刷配線板係於由玻璃環氧樹脂、聚醯亞胺樹脂等構成之電絕緣性基板之表面,載置表面電路形成用之薄銅箔,其後進行加熱、加壓而製造覆銅積層板。接下來,於該覆銅積層板,依序進行貫穿孔開孔、貫穿孔鍍覆,其後對該覆銅積層板之銅箔進行蝕刻處理而形成具備所需線寬及所需線間間距之配線圖案。最後,進行以下之處理,亦即,阻焊劑塗佈、曝光、貫穿孔鍍覆、或為了使電子零件之連接部之鍍覆露出而藉由苛性鈉等去除未硬化之阻焊劑、其他精加工處理。The printed wiring board is placed on the surface of an electrically insulating substrate made of glass epoxy resin, polyimide resin, or the like, and a thin copper foil for forming a surface circuit is placed thereon, followed by heating and pressing to produce a copper-clad laminated board . Next, through-hole openings and through-hole plating are sequentially performed on the copper-clad laminated board, and then the copper foil of the copper-clad laminated board is etched to form a desired line width and a required distance between lines. Wiring pattern. Finally, the following processes are performed, that is, solder resist coating, exposure, through-hole plating, or removal of unhardened solder resist by caustic soda, etc. in order to expose the plating of the connection part of the electronic part, and other finishing deal with.
此時所使用之銅箔通常使用藉由下述方式而獲得之電解銅箔,亦即,使用圖1所示之電解析出裝置,使銅箔101析出至滾筒(drum)102,並將該銅箔101剝離。自滾筒102剝離之電解析出起始面(光澤面,以下,稱為S面)相對較平滑,作為相反面之電解析出結束面(粗糙面,以下,稱為M面)通常具有凹凸。通常,藉由對M面進行粗糙化處理,而提高與基板樹脂之接著性。The copper foil used at this time is usually an electrolytic copper foil obtained by the following method, that is, the copper foil 101 is precipitated to a drum 102 using an electrolysis device shown in FIG. The copper foil 101 is peeled. The electro-decomposed starting surface (glossy surface, hereinafter referred to as the S surface) peeled from the drum 102 is relatively smooth, and the electro-decomposed end surface (rough surface, hereinafter referred to as M surface) as the opposite surface generally has unevenness. In general, the M surface is roughened to improve the adhesion to the substrate resin.
最近,業界於銅箔之粗糙化面,預先貼合如環氧樹脂之接著用樹脂,使該接著用樹脂成為半硬化狀態(B階段)之絕緣樹脂層,製成附樹脂之銅箔,將該附樹脂之銅箔用作表面電路形成用之銅箔,將該銅箔之絕緣樹脂層之側熱壓接於基板(絕緣基板),從而製造印刷配線基板、尤其是增建配線基板。對於該增建配線基板,期望將各種電子零件高度積體化,對應於此,對於配線圖案,亦要求高密度化,因而逐漸變為要求微細之線寬、線間間距之配線圖案、所謂之精細圖案之印刷配線基板。例如,作為伺服器、路由器、通訊基地台、車載搭載基板等中所使用之多層基板或智慧型手機用多層基板,要求具有線寬、線間間距分別為15 µm左右之高密度極微細配線之印刷配線基板。Recently, in the industry, a roughened surface of copper foil is previously bonded with an epoxy resin, such as an epoxy resin, so that the adhesive resin becomes a semi-hardened (B-stage) insulating resin layer, and a copper foil with resin is made. The resin-coated copper foil is used as a copper foil for forming a surface circuit, and a side of an insulating resin layer of the copper foil is thermocompression-bonded to a substrate (insulating substrate) to manufacture a printed wiring board, particularly an additional wiring board. For this additional wiring board, it is expected that various electronic components will be highly integrated. Correspondingly, high density is also required for wiring patterns. Therefore, wiring patterns that require fine line widths and space between lines have gradually become so-called Fine pattern printed wiring board. For example, as multilayer substrates used in servers, routers, communication base stations, and vehicle-mounted substrates, or multilayer substrates for smartphones, high-density ultra-fine wiring with a line width and a line spacing of about 15 µm are required. Printed wiring board.
隨著此種配線基板之高密度化、微細化,越來越難以利用減成法形成微細電路,取而代之,逐漸變為使用半加成法(MSAP法(Modified Semi-Additive Process,改良半加成法))。MSAP法中,於樹脂層上形成極薄銅箔作為供電層,接下來於極薄銅箔上實施圖案鍍銅。接下來,藉由快速蝕刻將極薄銅箔去除,藉此形成所需之配線。With the increase in the density and miniaturization of such wiring substrates, it has become increasingly difficult to form fine circuits using the subtractive method, and instead, it has gradually changed to the modified semi-additive process (MSAP method). law)). In the MSAP method, an ultra-thin copper foil is formed on a resin layer as a power supply layer, and then pattern copper plating is performed on the ultra-thin copper foil. Next, the ultra-thin copper foil is removed by rapid etching, thereby forming a desired wiring.
MSAP法中,通常使用附載體之薄銅箔。附載體之薄銅箔係以如下之態樣使用:於作為載體之銅箔(載體銅箔)之單面,依序形成剝離層及薄銅箔,該薄銅箔之表面成為粗糙化面。然後,使該粗糙化面重疊於樹脂基板後,對整體進行熱壓接,接下來將載體銅箔剝離、去除,使該薄銅箔之與該載體銅箔之接合側露出,於該接合側形成預定的配線圖案。 為了增建配線基板中之層間連接,而開設被稱作通孔之孔,多數情況下該開孔係藉由照射雷射光而進行。並且,MSAP法中,採用如下之被稱作直接雷射加工之方法:藉由對銅箔直接照射雷射光,而將銅箔與樹脂一起開孔。In the MSAP method, a thin copper foil with a carrier is usually used. The thin copper foil with a carrier is used as follows: a peeling layer and a thin copper foil are sequentially formed on one side of a copper foil (carrier copper foil) as a carrier, and the surface of the thin copper foil becomes a roughened surface. Then, after the roughened surface is superposed on the resin substrate, the whole is subjected to thermocompression bonding, and then the carrier copper foil is peeled off and removed to expose the bonding side of the thin copper foil and the carrier copper foil, and the bonding side is exposed. A predetermined wiring pattern is formed.增 In order to increase the interlayer connection in the wiring substrate, a hole called a through hole is opened. In most cases, the opening is performed by irradiating laser light. In addition, in the MSAP method, a method called direct laser processing is adopted in which a copper foil is directly perforated with a resin by irradiating laser light directly to the copper foil.
MSAP法中所使用之附載體之銅箔之對樹脂基材之黏貼面通常為M面,雷射加工面(S面)平滑而雷射吸收性不充分,因此作為雷射加工之預處理,必需進行棕色氧化處理(brown treatment)(蝕刻粗糙化處理)。因此,專利文獻1中,提出有一種銅箔,為了提高S面之雷射加工性,於雷射加工面具有由鉻、鈷、鎳、鐵等構成之雷射吸收層,藉此雷射加工性良好。然而,該附載體之銅箔中之薄銅箔係利用通常之硫酸銅浴鍍覆浴而製造,存在針孔大量產生之問題。The adhesive surface of the copper foil with a carrier used in the MSAP method to the resin substrate is usually M surface, the laser processed surface (S surface) is smooth and the laser absorptivity is not sufficient. Therefore, it is used as a pretreatment for laser processing. A brown treatment (etching roughening treatment) is necessary. Therefore, in Patent Document 1, a copper foil is proposed. In order to improve the laser processability of the S surface, a laser absorbing layer made of chromium, cobalt, nickel, iron, or the like is provided on the laser processed surface to perform laser processing. Sex is good. However, the thin copper foil of the copper foil with a carrier is manufactured using a common copper sulfate bath plating bath, and there is a problem that a large number of pinholes are generated.
另外,專利文獻2中,提出有一種銅箔,已藉由均勻地形成鎳及鋅鉻酸鹽層作為中間層而抑制針孔。然而,因為中間層(剝離層)形成於載體箔之光澤面上,所以剝離載體箔後受雷射照射之中間層平滑而不易吸收雷射之光,雷射加工性差。另外,因為是附載體之銅箔,所以存在剝離附載體之銅箔需要勞力和時間而操作性差之問題。In addition, Patent Document 2 proposes a copper foil in which pinholes are suppressed by uniformly forming a nickel and zinc chromate layer as an intermediate layer. However, since the intermediate layer (release layer) is formed on the glossy surface of the carrier foil, the intermediate layer irradiated with laser light after peeling the carrier foil is smooth and difficult to absorb laser light, and the laser processability is poor. In addition, since it is a copper foil with a carrier, there is a problem that labor and time are required to peel off the copper foil with a carrier, and operability is poor.
專利文獻3中,提出有一種附載體之銅箔,已藉由抑制薄銅箔之中間層側之粗糙度之變動,而提高雷射加工性及蝕刻性。然而,該附載體之銅箔中之薄銅箔係利用通常之硫酸銅浴鍍覆浴而製造,存在針孔大量產生之問題。 [先前技術文獻] (專利文獻)Patent Document 3 proposes a copper foil with a carrier, which has improved laser processability and etchability by suppressing variations in the roughness of the intermediate layer side of the thin copper foil. However, the thin copper foil of the copper foil with a carrier is manufactured using a common copper sulfate bath plating bath, and there is a problem that a large number of pinholes are generated. [Prior Art Literature] (Patent Literature)
專利文獻1:日本特開2013-75443號公報 專利文獻2:國際公開2015/030256號 專利文獻3:日本特開2014-208480號公報Patent Document 1: Japanese Patent Application Publication No. 2013-75443 443 Patent Document 2: International Publication No. 2015/030256 Patent Document 3: Japanese Patent Application Publication No. 2014-208480
[發明所欲解決的問題] MSAP法中使用附載體之銅箔,但該附載體之銅箔存在下述之問題點。 ・ 針孔多而使製造之良率降低。 ・ 剝離載體箔後受雷射照射之中間層平滑而不易吸收雷射之光,雷射加工性差。因此,作為雷射加工之預處理,必需棕色氧化處理(蝕刻粗糙化處理)。 ・ 載體箔之剝離步驟花費勞力和時間而使製造成本增加。 因為存在此種問題,所以期望代替附載體之銅箔之新材料。針對該等欲解決之問題,本發明之目的在於提供一種表面處理銅箔,其常態及加熱後之拉伸強度高,即便是無載體箔之薄箔,亦不會產生褶皺,而可應用於MSAP法,雷射加工性(直接雷射加工)、蝕刻性及薄箔操作性優異,且針孔少,而適於高密度配線電路。 [解決問題的技術手段][Problems to be Solved by the Invention] The copper foil with a carrier is used in the MSAP method, but the copper foil with a carrier has the following problems.多 There are many pinholes, which reduces the manufacturing yield.中间 After peeling off the carrier foil, the intermediate layer exposed to laser light is smooth and difficult to absorb laser light, and the laser processability is poor. Therefore, as a pretreatment for laser processing, a brown oxidation treatment (etching roughening treatment) is necessary.剥离 The peeling step of the carrier foil takes labor and time to increase the manufacturing cost. Because of this problem, a new material is desired to replace the copper foil with a carrier. In view of these problems to be solved, the object of the present invention is to provide a surface-treated copper foil, which has a high tensile strength in normal state and after heating. Even a thin foil without a carrier foil does not cause wrinkles, and can be applied to The MSAP method is excellent in laser processability (direct laser processing), etching properties, and thin foil operability, and has fewer pinholes, making it suitable for high-density wiring circuits. [Technical means to solve the problem]
本發明人等反覆進行努力研究,在此過程中,發現「Sdr為25%至120%」之粗糙化處理面適於直接雷射加工。另外,發現本發明之表面處理銅箔藉由設為常態下之拉伸強度為400 MPa至700 MPa,在220℃加熱2小時後,在常溫測定之拉伸強度為300 MPa以上,箔厚為7 µm以下之表面處理銅箔,並且至少一面之展開面積比(Sdr)為25%至120%,且直徑30 µm以上之針孔之數量為20個/m2 以下,而蝕刻性、雷射加工性(直接雷射加工)及薄箔操作性優異,且針孔少,而適於高密度配線電路,基於該見解而完成了本發明。The present inventors have made diligent research repeatedly, and in the process, found that the roughened surface with "Sdr of 25% to 120%" is suitable for direct laser processing. In addition, it was found that the surface-treated copper foil of the present invention has a tensile strength of 400 MPa to 700 MPa under normal conditions, and after being heated at 220 ° C for 2 hours, the tensile strength measured at normal temperature is 300 MPa or more, and the foil thickness is Surface-treated copper foil below 7 µm, and the spread area ratio (Sdr) of at least one side is 25% to 120%, and the number of pinholes with a diameter of 30 µm or more is 20 / m 2 or less. Etching, laser The present invention has been completed on the basis of this knowledge that it is excellent in workability (direct laser processing) and thin foil operability, and has few pinholes, and is suitable for high-density wiring circuits.
本發明中,所謂常態係指,表面處理銅箔未經過熱處理等熱履歷,放置於室溫(=約25℃)之狀態。常態下之拉伸強度可在室溫藉由IPC-TM-650測定。另外,加熱後之拉伸強度可將表面處理銅箔加熱至220℃並保持2小時後,自然冷卻至室溫,在室溫與常態下之拉伸強度同樣地進行測定。In the present invention, the normal state refers to a state where the surface-treated copper foil has not been subjected to a thermal history such as heat treatment, and is left at room temperature (= about 25 ° C). The tensile strength under normal conditions can be measured by IPC-TM-650 at room temperature. In addition, the tensile strength after heating can be measured after the surface-treated copper foil is heated to 220 ° C. for 2 hours, and then naturally cooled to room temperature.
若常態下之拉伸強度為400 MPa至700 MPa,則操作性及蝕刻性良好。若常態下之拉伸強度未達400 MPa,則搬送薄箔片品時會產生褶皺,因此操作性差,若大於700 MPa,則利用滾筒之析出製造時容易引起箔斷裂而不適於製造。加熱後在常溫測定之拉伸強度為300 MPa以上時,於基板之積層步驟中加熱後,結晶粒亦細而蝕刻性良好。若同樣之加熱後之拉伸強度為300 MPa以下,則結晶粒變大,不易利用蝕刻溶解,因此蝕刻性變差。If the tensile strength in the normal state is 400 MPa to 700 MPa, the operability and etching properties are good. If the tensile strength in the normal state is less than 400 MPa, wrinkles may be generated during the transportation of thin foil products. Therefore, the handleability is poor. If the tensile strength is more than 700 MPa, it is easy to cause the foil to break during the production by the precipitation of the roller, which is not suitable for manufacturing. When the tensile strength measured at room temperature after heating is 300 MPa or more, the crystal grains are also fine and the etchability is good after heating in the substrate lamination step. If the tensile strength after the same heating is 300 MPa or less, crystal grains become large, and it is difficult to dissolve by etching, so the etching properties are deteriorated.
表面處理銅箔之箔厚為7 µm以下,亦可為6 µm以下。若表面處理銅箔之箔厚超過7 µm,則存在利用低能量之雷射之開口度變差之傾向。若表面處理銅箔之箔厚為7 µm以下、尤其是6 µm以下,則存在雷射加工性、尤其是8 W左右之低能量之雷射照射中之加工性變高之傾向。The thickness of the surface-treated copper foil is 7 µm or less, or 6 µm or less. If the thickness of the surface-treated copper foil exceeds 7 µm, the opening degree of a laser using a low energy tends to deteriorate. If the surface-treated copper foil has a foil thickness of 7 µm or less, especially 6 µm or less, there is a tendency that the laser processability, particularly the processability in low-energy laser irradiation of about 8 W, becomes high.
於本發明中,箔厚係指對藉由電解析出製造之銅箔視需要進行後述之雷射吸收層之形成、粗糙化處理層之形成、鎳層之形成、鋅層之形成、鉻酸鹽處理、矽烷偶合層之形成等表面處理後進行雷射加工的前階段的膜厚。箔厚可藉由電子天秤,以質量厚度之形式進行測定。In the present invention, the foil thickness refers to the formation of a laser absorbing layer, a roughening treatment layer, a nickel layer, a zinc layer, and chromic acid, as needed, for a copper foil manufactured by electrolysis as described later. The film thickness in the first stage after laser processing after surface treatment such as salt treatment and formation of silane coupling layer. The foil thickness can be measured in the form of mass thickness by an electronic balance.
於本發明中,藉由將至少一面之展開面積比(Sdr)設為25%至120%,可提高將該面設為雷射照射面時之直接雷射加工性。In the present invention, by setting the spreading area ratio (Sdr) of at least one surface to 25% to 120%, it is possible to improve the direct laser processability when the surface is set as the laser irradiation surface.
所謂展開面積比(Sdr),係指以具有測定區域之尺寸之理想面作為基準,根據表面性質狀態所增加之表面積之比率,由下式定義。The so-called spreading area ratio (Sdr) refers to the ratio of the surface area that is increased according to the surface property state based on the ideal surface having the size of the measurement area as a reference, and is defined by the following formula.
此處,式中之x、y係平面座標,z係高度方向之座標。z(x,y)表示某點之座標,將該座標進行微分,藉此成為該座標點處之斜率。另外,A係測定區域之平面面積。 展開面積比(Sdr)可藉由三維白色干涉式顯微鏡、掃描式電子顯微鏡(Scanning Electron Microscope,SEM)、電子束三維粗糙度解析裝置等,測定、評價銅箔表面之凹凸差而求出。通常,Sdr與表面粗糙度Sa之變化無關,而是存在若表面性質狀態之空間複雜性增加則增大之傾向。Here, x and y in the formula are plane coordinates, and z is a coordinate in the height direction. z (x, y) represents the coordinate of a point, and the coordinate is differentiated to thereby become the slope of the coordinate point. In addition, A is the planar area of the measurement area. The developed area ratio (Sdr) can be determined by measuring and evaluating the unevenness on the surface of the copper foil using a three-dimensional white interference microscope, a scanning electron microscope (SEM), an electron beam three-dimensional roughness analyzer, and the like. Generally, Sdr has nothing to do with the change in surface roughness Sa, but it tends to increase if the spatial complexity of the surface property state increases.
此處,對直接雷射加工之原理進行說明。若將銅箔表面上之反射率設為r,將吸收率設為µ,將穿透率設為τ,則下式成立。 r+µ+τ=1 於直接雷射加工中,針對銅箔選擇如成為τ=0之雷射光,通常為CO2 氣體雷射等,上述式成為r+µ=1。另外,雷射光之強度以均勻之分佈被吸收時,若將光束半徑設為a,則光束中心軸(Z軸)上之溫度分佈以下式表示。Here, the principle of direct laser processing will be described. If the reflectance on the surface of the copper foil is r, the absorptivity is µ, and the transmittance is τ, the following formula is established. r + µ + τ = 1 In direct laser processing, for copper foils, such as laser light that becomes τ = 0, usually a CO 2 gas laser, etc., the above formula becomes r + µ = 1. In addition, when the intensity of the laser light is absorbed in a uniform distribution, if the beam radius is set to a, the temperature distribution on the central axis (Z axis) of the beam is expressed by the following formula.
此處,式中之x、y係平面座標,z係高度方向之座標。另外,P係所吸收之雷射功率[J/s],x係熱擴散率=K/ρ・C[cm2 /S],K係導熱率[J/cm・s・K],ρ係密度[g/cm3 ],C係比熱[J/g・K],t係雷射照射時間[s],a係光束半徑[cm]。 溫度隨著時間增加而上升,但在一定時間內飽和,此時之溫度如下式所示。Here, x and y in the formula are plane coordinates, and z is a coordinate in the height direction. In addition, the laser power absorbed by P is [J / s], the thermal diffusivity of x is K / ρ ・ C [cm 2 / S], the thermal conductivity of K is [J / cm ・ s ・ K], and ρ is Density [g / cm 3 ], C specific heat [J / g ・ K], t series laser irradiation time [s], a series beam radius [cm]。 temperature rises with time, but within a certain time Saturated, the temperature at this time is shown by the following formula.
可知如上式,被銅箔表面吸收之雷射光之能量越大,溫度越高。其原因在於,藉由所吸收之雷射光之能量使原子振動增幅而轉換為熱。於直接雷射加工中,利用該熱能,使雷射照射部位之銅箔熔融而進行開孔加工。為了提高直接雷射加工之精度及效率,如由上式可知,必須降低銅箔表面上之反射率或提高吸收率。It can be known from the above formula that the greater the energy of the laser light absorbed by the surface of the copper foil, the higher the temperature. The reason is that the energy of the laser light absorbed causes the atomic vibration to be amplified and converted into heat. In direct laser processing, the thermal energy is used to melt the copper foil at the laser irradiation site and perform hole processing. In order to improve the accuracy and efficiency of direct laser processing, as can be seen from the above formula, it is necessary to reduce the reflectance on the copper foil surface or increase the absorption rate.
於先前之MSAP法中,載體箔剝離後之銅之表面之吸收率低,因此藉由利用棕色氧化處理使表面粗糙化使吸收率增加而對應於直接雷射加工,但因為棕色氧化處理步驟花費勞力,所以就製造成本之觀點而言有問題。因此,反覆進行努力研究,結果發現,藉由將銅箔之至少一面之展開面積比(Sdr)設為25%至120%,可提高將該面設為雷射照射面時之直接雷射加工性。若設為如Sdr成為25%至120%之表面,則以1 µm以下形成複雜性高之凹凸形狀。若對具有此種形狀之銅箔照射雷射,則漫反射增加,藉此雷射光之吸收率增加。另外,可認為藉由複雜性高之表面凹凸形狀使銅箔之最表面層活化而形成氧化膜,藉此反射率減少且藉由氧化膜層之表面積之增加而使熱電傳導率降低,與先前相比雷射光照射部之溫度上升,藉此直接雷射加工性提高。雷射加工面之Sdr未達25%時,反射率高而雷射光之吸收率差,因此存在雷射之吸收性變差之傾向。另外,Sdr大於120%時,容易產生熔融之銅再次將孔填埋之不良情況,雷射加工性惡化。In the previous MSAP method, the absorptivity of the copper surface after the carrier foil was peeled was low. Therefore, the surface was roughened by the brown oxidation treatment to increase the absorptivity, which corresponds to the direct laser processing, but because the brown oxidation treatment step cost Labor is problematic from the viewpoint of manufacturing costs. Therefore, after repeated efforts, it was found that by setting the spread area ratio (Sdr) of at least one side of the copper foil to 25% to 120%, the direct laser processing can be improved when the surface is set as the laser irradiation surface. Sex. If it is set that the surface of Sdr is 25% to 120%, a highly complicated uneven shape is formed at 1 µm or less. When a copper foil having such a shape is irradiated with a laser, the diffuse reflection increases, whereby the absorption rate of the laser light increases. In addition, it is considered that an oxide film is formed by activating the outermost layer of the copper foil by a highly complicated surface uneven shape, thereby reducing the reflectance and reducing the thermoelectric conductivity by increasing the surface area of the oxide film layer. Compared with the temperature rise of a laser light irradiation part, direct laser processability improves by this. When the Sdr of the laser-machined surface is less than 25%, the reflectance is high and the absorption rate of the laser light is poor. Therefore, the laser absorptivity tends to deteriorate. In addition, if Sdr is greater than 120%, a defect that the molten copper fills the hole again is likely to occur, and laser processability is deteriorated.
另外,已知將銅箔設為薄箔時,若產生針孔,則會使電路基板之性能降低,但本發明中可獲得直徑30 µm以上之針孔為20個/m2 以下之銅箔,可抑制電路基板之性能降低。In addition, it is known that when a copper foil is used as a thin foil, if pinholes occur, the performance of a circuit board is reduced. However, in the present invention, a copper foil having a pinhole having a diameter of 30 µm or more and 20 pinholes / m 2 or less can be obtained. , Can suppress the performance of the circuit substrate from being reduced.
針孔之個數係將銅箔切斷成適宜之大小、例如200 mm×200 mm,例如利用光穿透法標記針孔後,利用光學顯微鏡確認直徑,計算30 µm以上之孔。可基於所獲得之針孔之數量,算出每單位面積(m2 )之針孔之數量(個/m2 )。 [功效]The number of pinholes is a copper foil cut to a suitable size, for example, 200 mm × 200 mm. For example, after pinholes are marked with the light penetration method, the diameter is confirmed with an optical microscope, and holes with a diameter of 30 µm or more are calculated. The number of pinholes per unit area (m 2 ) can be calculated based on the number of pinholes obtained (number / m 2 ). [efficacy]
根據本發明,可提供一種銅箔,其蝕刻性、雷射加工性、薄箔操作性、耐針孔性優異。另外,可提供一種表面處理銅箔,其因為常態及加熱後之拉伸強度高,所以即便是無載體銅箔,亦可應用於MSAP法。According to the present invention, it is possible to provide a copper foil having excellent etching properties, laser processability, thin foil operability, and pinhole resistance. In addition, it is possible to provide a surface-treated copper foil that has high tensile strength in normal state and after heating, so that it can be applied to the MSAP method even without a carrier copper foil.
本發明之表面處理銅箔之展開面積比(Sdr)為25%至120%,但若展開面積比(Sdr)為30%至80%,則存在雷射加工性進一步提高之傾向。另外,表面處理銅箔之箔厚為7 µm以下、尤其是6 µm以下時,亦較佳為展開面積比(Sdr)為30%至80%,直徑30 µm以上之針孔為10個/m2 以下。若直徑30 µm以上之針孔超過10個/m2 ,則存在應用於電路基板時之性能降低之傾向。The spread area ratio (Sdr) of the surface-treated copper foil of the present invention is 25% to 120%, but if the spread area ratio (Sdr) is 30% to 80%, there is a tendency that the laser processability is further improved. In addition, when the thickness of the surface-treated copper foil is 7 µm or less, especially 6 µm or less, the spread area ratio (Sdr) is preferably 30% to 80%, and the number of pinholes with a diameter of 30 µm or more is 10 holes / m. 2 or less. When the number of pinholes with a diameter of 30 µm or more exceeds 10 holes / m 2 , the performance tends to decrease when applied to a circuit board.
本發明之表面處理銅箔較理想為雷射加工面在Yxy表色系統中Y成為25.0%至65.5%,x成為0.30%至0.48%,y成為0.28%至0.41%。表面處理銅箔之雷射加工面滿足上述之展開面積比(Sdr),並且進而該加工面在Yxy表色系統中Y處於25.0%至65.5%,x處於0.30%至0.48%、y處於0.28%至0.41%之範圍時,雷射吸收性變得更良好,雷射加工性非常良好。In the surface-treated copper foil of the present invention, it is preferable that the laser-processed surface in the Yxy color system is that Y becomes 25.0% to 65.5%, x becomes 0.30% to 0.48%, and y becomes 0.28% to 0.41%. The laser processed surface of the surface-treated copper foil satisfies the above-mentioned spreading area ratio (Sdr), and further, the processed surface in the Yxy color system Y is 25.0% to 65.5%, x is 0.30% to 0.48%, and y is 0.28%. In the range of 0.41%, laser absorptivity becomes better, and laser processability is very good.
Yxy表色系統例如可依據JIS Z 8722使用色彩計等裝置進行測定。The Yxy color measurement system can be measured using, for example, a colorimeter in accordance with JIS Z 8722.
如上所述,MSAP法中所使用之銅箔之對樹脂基材之黏貼面為M面,雷射加工面平滑而雷射吸收性不充分,因此作為雷射加工之預處理而進行棕色氧化處理(蝕刻粗糙化處理)。於本發明中,即便不進行棕色氧化處理,亦可提高雷射加工性。As described above, the copper foil used in the MSAP method has an M-side adhered surface to the resin substrate, the laser-processed surface is smooth and the laser absorptivity is not sufficient. Therefore, brown oxidation is performed as a pre-treatment for laser processing. (Etching roughening treatment). In the present invention, the laser processability can be improved even if the brown oxidation treatment is not performed.
以下,對用以製造本發明之表面處理銅箔之條件、方法進行說明。 (1)電解銅箔的製造 本發明中之銅箔例如藉由下述方法而製造,即藉由使用硫酸-硫酸銅水溶液作為電解液,並於由被鉑族元素或其氧化物元素覆蓋之鈦構成之不溶性陽極及與該陽極對向設置之鈦製陰極滾筒之間供給該電解液,一邊以固定速度旋轉陰極滾筒,一邊於兩極間接通直流電流,從而使銅析出至陰極滾筒表面上,並將所析出之銅從陰極滾筒表面上撕下,連續地進行捲繞。Hereinafter, conditions and methods for producing the surface-treated copper foil of the present invention will be described. (1) Production of electrolytic copper foil The copper foil in the present invention is produced, for example, by using a sulfuric acid-copper sulfate aqueous solution as an electrolytic solution and coating the copper foil with a platinum group element or an oxide element thereof. The electrolytic solution is supplied between an insoluble anode made of titanium and a titanium cathode drum arranged opposite to the anode. While rotating the cathode drum at a fixed speed, a DC current is applied between the two poles, so that copper is deposited on the surface of the cathode drum. The precipitated copper was torn off from the surface of the cathode drum and continuously wound.
於本發明中,較佳為以陰極滾筒表面內之銅之析出電位無變動而成為均勻之方式製造電解銅箔。為此,例如可列舉在鈦滾筒表面不存在氧化膜之狀態下進行製箔之方法。作為一例,亦可採用陰極還原步驟。如圖1所示,先前之電解銅箔之製造裝置中,藉由拋光輪103對成為陰極之電解滾筒102進行研磨,藉此將滾筒表面所產生之氧化膜去除。相對於此,陰極還原步驟係指例如代替圖1之電解銅箔之析出裝置之拋光輪103,如圖2之電解銅箔之析出裝置所示,藉由陰極還原裝置105之電解液(稀硫酸)106,將氧化膜去除之步驟。利用滾筒102及陰極還原裝置105,將氧化膜去除,藉此期待銅之初始析出於鈦滾筒表面均勻地產生而針孔減少。圖1所示之先前之利用鈦滾筒的銅箔之製造中,因為鈦滾筒表面之鈦氧化覆膜之膜厚存在不均,所以銅之析出電位於滾筒表面內變動,若製成薄箔,則容易產生針孔。藉由採用陰極還原步驟,增加陰極還原電流密度,可減少針孔。其原因在於,可認為藉由陰極還原電流密度之增加,使鈦氧化物之還原進一步進行,鈦滾筒表面之銅之析出電位之分佈無不均,從而可抑制針孔。In the present invention, it is preferable to produce the electrolytic copper foil in such a manner that the precipitation potential of copper in the surface of the cathode drum is uniform and unchanged. For this purpose, for example, a method of making a foil in a state where an oxide film does not exist on the surface of a titanium roller is mentioned. As an example, a cathodic reduction step may be used. As shown in FIG. 1, in the conventional manufacturing apparatus of electrolytic copper foil, the electrolytic drum 102 serving as a cathode is polished by a polishing wheel 103, thereby removing the oxide film generated on the surface of the drum. In contrast, the cathodic reduction step refers to, for example, the polishing wheel 103 instead of the precipitation device of the electrolytic copper foil of FIG. 1, as shown in the precipitation device of the electrolytic copper foil of FIG. 2. ) 106, the step of removing the oxide film. By removing the oxide film by the drum 102 and the cathode reduction device 105, it is expected that the initial precipitation of copper will occur uniformly on the surface of the titanium drum and reduce pinholes. In the previous manufacturing of copper foil using a titanium roller shown in FIG. 1, because the thickness of the titanium oxide film on the surface of the titanium roller is uneven, the precipitation of copper is located within the surface of the roller. If it is made into a thin foil, It is easy to produce pinholes. By using a cathodic reduction step, the cathodic reduction current density is increased, and pinholes can be reduced. The reason is that it can be considered that the reduction of the titanium oxide proceeds with the increase of the reduction current density of the cathode, and there is no unevenness in the distribution of the precipitation potential of copper on the surface of the titanium drum, so that pinholes can be suppressed.
製造電解銅箔時,作為向電解液中之添加劑,可添加伸乙硫脲、聚乙二醇、四甲基硫脲、聚丙烯醯胺等。藉由增加伸乙硫脲、四甲基硫脲之添加量,可增加常態下之拉伸強度及加熱後之拉伸強度。若常態下之拉伸強度為400 MPa至700 MPa,則操作性及蝕刻性良好。若常態下之拉伸強度未達400 MPa,則操作性差,若大於700 MPa,則容易引起箔斷裂而不適於製造。另外,在220℃加熱2小時後,在常溫測定之拉伸強度為300 MPa以上時,於基板之積層中加熱後,結晶粒亦細而蝕刻性良好。若同樣地測定之加熱後之拉伸強度為300 MPa以下,則結晶粒變大,不易利用蝕刻溶解,因此蝕刻性變差。When producing electrolytic copper foil, as an additive to the electrolytic solution, ethylene thiourea, polyethylene glycol, tetramethylthiourea, polypropylene amidamine, and the like can be added. By increasing the amount of ethythiourea and tetramethylthiourea, the tensile strength under normal conditions and the tensile strength after heating can be increased. If the tensile strength in the normal state is 400 MPa to 700 MPa, the operability and etching properties are good. If the tensile strength in the normal state is less than 400 MPa, the workability is poor, and if it is more than 700 MPa, it is easy to cause the foil to break and it is not suitable for manufacturing. In addition, after heating at 220 ° C for 2 hours, when the tensile strength measured at normal temperature was 300 MPa or more, the crystal grains were also fine and the etchability was good after heating in the substrate laminate. If the tensile strength after heating measured in the same manner is 300 MPa or less, the crystal grains become large, and it is difficult to dissolve by etching, so the etching properties are deteriorated.
(2)銅箔之表面處理 <雷射吸收層形成處理> 其次,對上述所得之銅箔,進行用以形成雷射吸收層之表面處理。於本發明中,藉由脈衝電流而於銅箔之一面形成凹凸形狀之鍍覆層。該面成為使用銅箔藉由MSAP法製作電路時之雷射加工面。雷射吸收層之形成面可為電解銅箔製造步驟中之析出起始面(S面),亦可為析出結束面(M面)。通常,多數情況下將與樹脂基板之接著面(粗糙化處理面)設為M面,將雷射加工面設為S面,但於本發明中,亦可將與樹脂基板之接著面設為將S面經粗糙化處理之面,將雷射加工面設為M面。亦即,亦可於電解銅箔之製造過程中之電解析出起始面(S面)形成有粗糙化處理層。(2) Surface treatment of copper foil <Laser absorbing layer forming treatment> (2) Next, the copper foil obtained above is subjected to a surface treatment to form a laser absorbing layer. In the present invention, a rugged plating layer is formed on one surface of the copper foil by a pulse current. This surface becomes a laser-machined surface when a copper foil is used to make a circuit by the MSAP method. The formation surface of the laser absorbing layer may be the precipitation start surface (S surface) or the precipitation end surface (M surface) in the electrolytic copper foil manufacturing step. Generally, the surface (roughened surface) to be bonded to the resin substrate is set to the M surface and the laser processed surface is set to the S surface. However, in the present invention, the surface to be bonded to the resin substrate may also be set to The roughened surface of the S surface was set as the M surface. That is, the roughened layer can be formed by electrolysis of the starting surface (S surface) during the manufacturing process of the electrolytic copper foil.
於本發明中,發現藉由以成為雷射加工面之M面或S面之展開面積比Sdr成為25%至120%之方式具有適度之表面積,可不進行棕色氧化處理而實現直接雷射加工。另外,藉由於電解銅箔之製造過程中之電解析出起始面形成粗糙化處理層,亦可提高蝕刻因數。In the present invention, it has been found that direct laser processing can be achieved without performing a brown oxidation treatment by having a moderate surface area such that the development area ratio of the M-plane or S-plane that becomes the laser-machined surface becomes 25% to 120%. In addition, by forming the roughened layer by electrolysis of the starting surface during the electrolytic copper foil manufacturing process, the etching factor can also be improved.
作為用以形成雷射吸收層之鍍覆浴組成,可添加硫酸銅五水合物、硫酸、羥乙基纖維素(hydroxy ethyl cellulose,HEC)、聚乙二醇(polyethylene glycol,PEG)、硫脲等。藉由以2階段施加電流值不同之正脈衝電流,根據對應之2階段之析出電位,作用之添加物發生變化,可形成複雜之凹凸形狀。藉此,可獲得雷射吸收性優異之析出面。具體而言,1階段之電流值(Ion1)>2階段之電流值(Ion2)之階梯狀之脈衝電流中,存在若使1階段之電流值(Ion1)或1階段之時間(ton1)增加,則M面之Sdr增加之傾向。藉由以固定之時間間隔(toff)施加此種2階段之脈衝電流,可獲得具有雷射加工性良好之Sdr值之表面形狀。As a composition of a plating bath for forming a laser absorption layer, copper sulfate pentahydrate, sulfuric acid, hydroxy ethyl cellulose (HEC), polyethylene glycol (PEG), and thiourea can be added. Wait. By applying a positive pulse current with a different current value in two stages, the acting additive changes according to the corresponding precipitation potential in the two stages, and a complex uneven shape can be formed. Thereby, a precipitation surface excellent in laser absorptivity can be obtained. Specifically, in the step-like pulse current of the current value (Ion1) at stage 1> 2 (Ion2), if the current value at stage 1 (Ion1) or the time at stage 1 (ton1) is increased, The tendency of Sdr to increase on the M side. By applying such two-stage pulse current at a fixed time interval (toff), a surface shape having an Sdr value with good laser processability can be obtained.
Sdr為25%至120%之範圍時,雷射加工性提高。此種箔於表面處理銅箔表面具有約2 µm以下之微細凹凸形狀,雷射光之吸收性增加。若Sdr未達25%,則雷射光之吸收差,雷射加工性差。若Sdr大於120%,則CO2 雷射之波長之光之吸收率降低,雷射加工性降低。另外,若增加脈衝電流之時間間隔(toff),則在Yxy表色系統中Y減少。若Sdr為25%至120%之範圍,且在Yxy表色系統中Y為15.0%至85.0%之範圍,則雷射加工性良好。若Y未達15%或大於85%,則存在雷射加工性降低之傾向。若Sdr增加,則存在雷射開口數增加之傾向,藉由Y值減少,存在雷射開口數增加之傾向。若雷射照射面之Sdr為25%至120%之範圍,且在Yxy表色系統中Y為25.0%至65.5%、x為0.30%至0.48%、y為0.28%至0.41%,則雷射加工性特別良好。When the Sdr is in the range of 25% to 120%, the laser processability is improved. This foil has a fine uneven shape of about 2 µm or less on the surface of the surface-treated copper foil, and the laser light absorbency is increased. If Sdr is less than 25%, laser light absorption is poor, and laser processability is poor. If Sdr is greater than 120%, the absorption rate of light with a wavelength of CO 2 laser is reduced, and laser processability is reduced. In addition, if the time interval (toff) of the pulse current is increased, Y decreases in the Yxy color system. If Sdr is in the range of 25% to 120% and Y is in the range of 15.0% to 85.0% in the Yxy color system, the laser processability is good. If Y is less than 15% or more than 85%, there is a tendency that laser processability is reduced. When Sdr is increased, the number of laser openings tends to increase, and as the Y value decreases, the number of laser openings tends to increase. If the Sdr of the laser irradiation surface is in the range of 25% to 120%, and in the Yxy color system, Y is 25.0% to 65.5%, x is 0.30% to 0.48%, and y is 0.28% to 0.41%, then the laser is Workability is particularly good.
<形成粗糙化處理層> 於銅箔之與雷射加工面為相反側之面上,藉由微細銅粒子之電沈積,形成具有微細凹凸表面之粗糙化處理層。粗糙化處理層係藉由電鍍而形成,較佳為於鍍覆浴中添加螯合劑,螯合劑之濃度以0.1 g/L至5 g/L為適當。作為螯合劑,可列舉:DL-蘋果酸、EDTA(ethylene diamine tetraacetic acid,乙二胺四乙酸)鈉溶液、葡萄糖酸鈉、二伸乙基三胺五乙酸(diethylene triamine pentaacetic acid,DTPA)五鈉等螯合劑等。<Forming a roughening treatment layer> A roughening treatment layer having a fine uneven surface is formed by electrodeposition of fine copper particles on a surface of a copper foil opposite to the laser-machined surface. The roughened layer is formed by electroplating, and it is preferable to add a chelating agent to the plating bath, and the concentration of the chelating agent is preferably 0.1 g / L to 5 g / L. Examples of the chelating agent include DL-malic acid, EDTA (ethylene diamine tetraacetic acid) sodium solution, sodium gluconate, and diethylene triamine pentaacetic acid (DTPA) pentasodium And so on.
電解浴中,亦可添加硫酸銅、硫酸及鉬。藉由添加鉬,可提高蝕刻性。通常,於銅濃度為13 g/L至72 g/L、硫酸濃度為26 g/L至133 g/L、液溫為18℃至67℃、電流密度為3 A/dm2 至67 A/dm2 、處理時間為1秒至1分鐘55秒之條件下進行電沈積。In the electrolytic bath, copper sulfate, sulfuric acid, and molybdenum can also be added. By adding molybdenum, etching properties can be improved. Generally, at a copper concentration of 13 g / L to 72 g / L, a sulfuric acid concentration of 26 g / L to 133 g / L, a liquid temperature of 18 ° C to 67 ° C, and a current density of 3 A / dm 2 to 67 A / Electrodeposition was performed under conditions of dm 2 and treatment time of 1 second to 1 minute and 55 seconds.
<鎳層、鋅層、鉻酸鹽處理層之形成> 於本發明中,較佳為於粗糙化處理面上,進而依序形成鎳層、鋅層。該鋅層發揮如下之作用,亦即,將薄銅箔與樹脂基板進行熱壓接時,防止因薄銅箔與基板樹脂之反應所致之該基板樹脂之劣化、薄銅箔之表面氧化而提高與基板之接合強度。另外,鎳層發揮如下之作為鋅層之基底層之作用,用以防止對樹脂基板之熱壓接時該鋅層之鋅向銅箔(電解鍍銅層)側熱擴散,藉此使得鋅層之上述功能有效地發揮。 再者,該等鎳層、鋅層可應用公知之電解鍍覆法、無電解鍍覆法而形成。另外,該鎳層可由純鎳形成,亦可由含磷鎳合金形成。<Formation of a nickel layer, a zinc layer, and a chromate-treated layer> (1) In the present invention, it is preferable to form a nickel layer and a zinc layer sequentially on the roughened surface. The zinc layer functions to prevent deterioration of the substrate resin due to the reaction between the thin copper foil and the substrate resin and oxidation of the surface of the thin copper foil when the thin copper foil is thermally bonded to the resin substrate. Improve the bonding strength with the substrate. In addition, the nickel layer functions as a base layer of the zinc layer to prevent the zinc of the zinc layer from thermally diffusing to the side of the copper foil (electrolytic copper plating layer) during thermal compression bonding to the resin substrate, thereby making the zinc layer The above functions are effectively performed. Furthermore, these nickel layers and zinc layers can be formed by applying a known electrolytic plating method or an electroless plating method. The nickel layer may be formed of pure nickel or may be formed of a phosphorus-containing nickel alloy.
另外,若對鋅層之表面進而進行鉻酸鹽處理,則於該表面形成抗氧化層,因此較佳。作為所應用之鉻酸鹽處理,依據公知之方法即可,例如可列舉日本特開昭60-86894號公報中所揭示之方法。藉由使換算為鉻量為0.01 mg/dm2 至0.3 mg/dm2 左右之鉻氧化物及其水合物等附著,可對銅箔賦予優異之防銹能力。In addition, if the surface of the zinc layer is further subjected to a chromate treatment, an oxidation resistant layer is formed on the surface, which is preferable. As the chromate treatment to be applied, a known method may be used, and for example, the method disclosed in Japanese Patent Application Laid-Open No. 60-86894 may be mentioned. By attaching chromium oxides and hydrates thereof having a chromium content of about 0.01 mg / dm 2 to about 0.3 mg / dm 2 , it is possible to impart excellent rust preventive ability to copper foil.
<矽烷處理> 另外,若對前述之經鉻酸鹽處理之表面,進而進行使用矽烷偶合劑之表面處理,則會對銅箔表面(與基板之接合側之表面)賦予與接著劑之親和力強之官能基,因此該銅箔與基板之接合強度進一步提高,且進一步提高銅箔之防銹性、吸濕耐熱性,因此較佳。<Silane treatment> In addition, if the chromate-treated surface is further treated with a silane coupling agent, the copper foil surface (the surface on the bonding side with the substrate) will be given a strong affinity to the adhesive. Functional group, so the bonding strength between the copper foil and the substrate is further improved, and the rust resistance and moisture absorption and heat resistance of the copper foil are further improved, which is preferable.
作為矽烷偶合劑,可列舉出乙烯基系矽烷、環氧基系矽烷、苯乙烯基系矽烷、甲基丙烯醯基系矽烷、丙烯醯基系矽烷、胺基系矽烷、脲基系矽烷、氯丙基系矽烷、巰基系矽烷、硫醚系矽烷、異氰酸酯系矽烷等。該等矽烷偶合劑通常製成0.001%至5%之水溶液,將該水溶液塗佈於銅箔之表面後,直接進行加熱乾燥即可。再者,代替矽烷偶合劑,使用鈦(3)覆銅積層板的製造Examples of the silane coupling agent include vinyl-based silane, epoxy-based silane, styryl-based silane, methacryl-based silane, acryl-based silane, amine-based silane, urea-based silane, chlorine Propyl-based silanes, mercapto-based silanes, thioether-based silanes, isocyanate-based silanes, and the like. These silane coupling agents are usually made into an aqueous solution of 0.001% to 5%, and the aqueous solution can be applied to the surface of copper foil and then directly heated and dried. Furthermore, instead of a silane coupling agent, the manufacture of a copper-clad laminate using titanium (3)
(3)覆銅積層板的製造 最初,於由玻璃環氧樹脂、聚醯亞胺樹脂等構成之電絕緣性基板之表面,重疊載置薄銅箔之銅箔面(粗糙化處理層面),並進行加熱、加壓而製造附載體或無載體之覆銅積層板。本發明之表面處理銅箔因為常態及加熱後之拉伸強度高,所以即便無載體,亦可充分對應。接下來,對覆銅積層板之表面處理銅箔表面照射CO2 氣體雷射而進行開孔。亦即,自表面處理銅箔之形成有雷射吸收層之面照射CO2 氣體雷射,而進行貫通表面處理銅箔及樹脂基板之開孔加工。 [實施例](3) At the beginning of the manufacture of copper clad laminates, a copper foil surface (roughened surface) of a thin copper foil is placed on the surface of an electrically insulating substrate made of glass epoxy resin, polyimide resin, or the like, It is heated and pressed to produce a copper-clad laminated board with or without a carrier. Since the surface-treated copper foil of the present invention has high tensile strength in normal state and after heating, it can cope with it even without a carrier. Next, the surface of the copper-clad laminated sheet was irradiated with a CO 2 gas laser to open a hole. In other words, a CO 2 gas laser is irradiated from the surface of the surface-treated copper foil on which the laser-absorbing layer is formed, and a hole-cutting process is performed through the surface-treated copper foil and the resin substrate. [Example]
以下,藉由實施例詳細地說明本發明。 (1)銅箔之製造及雷射吸收層之形成 藉由表1所示之電解液、電流密度、浴溫之陰極還原步驟及基於表2所示之電解條件之電解析出步驟,製造實施例1至21及比較例1至9之電解銅箔。針對該等電解銅箔,分別於具有表3所示之組成之鍍覆浴、處理面及電解條件(脈衝電壓之脈衝寬度、電流密度、時間、浴溫)下,藉由電解鍍覆處理形成雷射吸收層。另外,於實施例22中,藉由交流電流形成雷射吸收層,於實施例23中,利用MECetchBOND CZ-8000處理形成雷射吸收層。再者,於表3中之電解條件下,Ion1表示第1階段之脈衝電流密度,Ion2表示第2階段之脈衝電流密度,ton1表示第1階段之脈衝電流施加時間,ton2表示第2階段之脈衝電流施加時間,toff表示將第2階段之脈衝電流與第1階段之脈衝電流之間之電流設為0之時間。另外,雷射吸收層之形成面係與表4所示之粗糙化處理面為相反側之面,於實施例1至19、22至23及比較例4、6至8中,於M面形成雷射吸收層(對S面進行粗糙化處理),於實施例20及21、比較例9中,於S面形成雷射吸收層(對M面進行粗糙化處理)。比較例1至3及5未形成雷射吸收層。Hereinafter, the present invention will be described in detail by examples. (1) Manufacture of copper foil and formation of laser absorbing layer According to the cathode reduction steps of electrolytic solution, current density, and bath temperature shown in Table 1, and the steps of electrolysis based on the electrolytic conditions shown in Table 2, The electrolytic copper foils of Examples 1 to 21 and Comparative Examples 1 to 9. For these electrolytic copper foils, they were formed by electrolytic plating treatment under a plating bath having a composition shown in Table 3, a treatment surface, and electrolytic conditions (pulse width, current density, time, and bath temperature). Laser absorbing layer. In addition, in Example 22, a laser absorbing layer was formed by an alternating current, and in Example 23, a MECetchBOND CZ-8000 process was used to form a laser absorbing layer. Furthermore, under the electrolytic conditions in Table 3, Ion1 represents the pulse current density in the first stage, Ion2 represents the pulse current density in the second stage, ton1 represents the pulse current application time in the first stage, and ton2 represents the pulse in the second stage. Current application time, toff represents the time when the current between the pulse current in the second stage and the pulse current in the first stage is set to 0. In addition, the formation surface of the laser absorbing layer is the surface opposite to the roughened surface shown in Table 4, and was formed on the M surface in Examples 1 to 19, 22 to 23, and Comparative Examples 4, 6 to 8. The laser absorbing layer (roughening the S surface). In Examples 20 and 21 and Comparative Example 9, a laser absorbing layer was formed on the S surface (roughening the M surface). Comparative Examples 1 to 3 and 5 did not form a laser absorbing layer.
[表1]
[表2]
[表3]
(2)粗糙化處理 其次,於雷射吸收層之相反側之面(表4所示之粗糙化處理面),藉由粗糙化粒子之電沈積,形成具有微細凹凸表面之粗糙化處理層。於全部之實施例及比較例中,以下述所示之粗糙面化鍍覆處理之順序進行,形成粗糙化處理層。 (粗糙面化鍍覆處理) 硫酸銅:按Cu濃度計算為13 g/L至72 g/L 硫酸濃度:26 g/L至133 g/L DL-蘋果酸:0.1 g/L至5.0 g/L 液溫:18℃至67℃ 電流密度:3 A/dm2 至67 A/dm2 處理時間:1秒至1分鐘55秒(2) Roughening treatment Secondly, on the surface on the opposite side of the laser absorbing layer (the roughening treatment surface shown in Table 4), a roughening treatment layer having a fine uneven surface is formed by electrodeposition of roughened particles. In all the examples and comparative examples, the roughened surface plating process was performed in the order shown below to form a roughened layer. (Rough surface plating) Copper sulfate: 13 g / L to 72 g / L based on Cu concentration Sulfuric acid concentration: 26 g / L to 133 g / L DL-malic acid: 0.1 g / L to 5.0 g / L Liquid temperature: 18 ° C to 67 ° C Current density: 3 A / dm 2 to 67 A / dm 2 Processing time: 1 second to 1 minute 55 seconds
(3)含鎳基底層的形成 針對全部之實施例1至23及比較例1至9,形成上述粗糙化處理層後,於粗糙化處理層上,在下述所示之鍍鎳條件下進行電解鍍覆,藉此形成基底層(鎳之附著量0.06 mg/dm2 )。 <鍍鎳條件> 硫酸鎳:按鎳金屬換算為5.0 g/L 過硫酸銨40.0 g/L 硼酸28.5 g/L 電流密度1.5 A/dm2 pH3.8 溫度28.5℃ 時間1秒至2分鐘(3) Formation of nickel-containing base layer For all of Examples 1 to 23 and Comparative Examples 1 to 9, after forming the roughened layer described above, electrolysis was performed on the roughened layer under the nickel plating conditions shown below. Plating was performed to form a base layer (the adhesion amount of nickel was 0.06 mg / dm 2 ). <Nickel plating conditions> Nickel sulfate: 5.0 g / L ammonium persulfate 40.0 g / L boric acid 28.5 g / L converted to nickel metal Current density 1.5 A / dm 2 pH3.8 Temperature 28.5 ℃ Time 1 second to 2 minutes
(4)含鋅耐熱處理層的形成 針對全部之實施例1至23及比較例1至9,形成上述基底層後,於該基底層上,在下述所示之鍍鋅條件下進行電解鍍覆,藉此形成耐熱處理層(鋅的附著量:0.05 mg/dm2 )。 <鍍鋅條件> 硫酸鋅七水合物1 g/L至30 g/L 氫氧化鈉10 g/L至300 g/L 電流密度0.1 A/dm2至10 A/dm2 溫度5℃至60℃ 時間1秒至2分鐘(4) Formation of zinc-containing heat-resistant treatment layer For all of Examples 1 to 23 and Comparative Examples 1 to 9, after the above-mentioned base layer was formed, electrolytic plating was performed on the base layer under the zinc plating conditions shown below. Thus, a heat-resistant treatment layer was formed (zinc adhesion amount: 0.05 mg / dm 2 ). <Galvanizing conditions> Zinc sulfate heptahydrate 1 g / L to 30 g / L Sodium hydroxide 10 g / L to 300 g / L Current density 0.1 A / dm2 to 10 A / dm 2 Temperature 5 ° C to 60 ° C Time 1 second to 2 minutes
(5)含鉻防銹處理層的形成 針對全部之實施例1至23及比較例1至9,形成上述耐熱處理層後,於該耐熱處理層上,在下述所示之鍍鉻處理條件下進行處理,藉此形成防銹處理層(鉻的附著量:0.02 mg/dm2 )。 <鍍鉻條件> (鍍鉻浴) 無水鉻酸CrO3 2.5 g/L pH2.5 電流密度0.5 A/dm2 溫度15℃至45℃ 時間1秒至2分鐘(5) Formation of a chromium-containing rust-preventive treatment layer For all of Examples 1 to 23 and Comparative Examples 1 to 9, after forming the heat-resistant treatment layer, the heat-resistant treatment layer was subjected to the chrome-plating treatment conditions shown below. This process forms an anti-rust treatment layer (the amount of chromium attached: 0.02 mg / dm 2 ). <Chrome plating conditions> (Chromium plating bath) Anhydrous CrO 3 2.5 g / L pH2.5 Current density 0.5 A / dm 2 Temperature 15 ° C to 45 ° C Time 1 second to 2 minutes
(6)矽烷偶合劑層的形成 針對全部之實施例1至23及比較例1至9,形成防銹處理層後,於該防銹處理層上,塗佈處理液,該處理液係於矽烷偶合劑水溶液中添加甲醇或乙醇,並調整為預定的pH而成。其後,保持預定時間後,利用熱風進行乾燥,藉此形成矽烷偶合劑層。(6) Formation of Silane Coupling Agent Layer For all of Examples 1 to 23 and Comparative Examples 1 to 9, after forming a rust-preventive treatment layer, apply a treatment solution on the rust-prevention treatment layer, and the treatment solution is based on silane The coupling agent aqueous solution is added with methanol or ethanol and adjusted to a predetermined pH. Thereafter, after keeping it for a predetermined time, it is dried with hot air to form a silane coupling agent layer.
(7)評價方法 <箔厚> 藉由電子天秤,以質量厚度之形式測定藉由上述處理(1)至(5)所獲得之全部之實施例1至23及比較例1至9之表面處理銅箔之厚度。結果如表1所示。(7) Evaluation method <Foil thickness> 测定 The surface treatments of all the Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above-mentioned treatments (1) to (5) were measured in the form of mass thickness by an electronic balance. The thickness of copper foil. The results are shown in Table 1.
<拉伸強度> 將藉由上述處理(1)至(5)所獲得之全部之實施例1至23及比較例1至9之表面處理銅箔切成12.7 mm×130 mm之大小,在室溫,藉由Instron公司之1122型拉伸試驗機試驗裝置,測定常態下之銅箔之拉伸強度。另外,將切成12.7 mm×130 mm之銅箔在220℃加熱2小時後,自然冷卻至常溫,其後同樣地測定加熱後之拉伸強度。測定係依據IPC-TM-650。結果如表4所示。<Tensile strength> 切 Cut all the surface-treated copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above processes (1) to (5) into a size of 12.7 mm × 130 mm. The tensile strength of the copper foil under normal conditions was measured using a 1122 tensile tester test device of Instron. In addition, the copper foil cut into 12.7 mm × 130 mm was heated at 220 ° C. for 2 hours, and then naturally cooled to normal temperature. Thereafter, the tensile strength after heating was measured in the same manner. The measurement is based on IPC-TM-650. The results are shown in Table 4.
<展開面積比> 針對藉由上述處理(1)至(5)所獲得之全部之實施例1至23及比較例1至9之表面處理銅箔,使用BRUKER公司之WykoContourGT-K,測定表面形狀,進行形狀解析,求出展開面積比(Sdr)。形狀解析係以VSI(vertical scanning interferometry,垂直掃描干涉)測定方式,使用高解析度CCD(charge coupled device,電荷耦合器件)相機,藉由光源為白色光、測定倍率為10倍、測定範圍為477 µm×357.8 µm、側向取樣(LateralSampling)為0.38 µm、速度(speed)為1、回掃(Backscan)為5 µm、長度(Length)為5 µm、閾值(Threshold)為5%之條件進行,進行項目移除(TermsRemoval)之過濾處理後,進行資料處理。結果如表4所示。<Developed area ratio> For the surface-treated copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above processes (1) to (5), the surface shape was measured using WykoContourGT-K from BRUKER Corporation. The shape analysis was performed to determine the developed area ratio (Sdr). The shape analysis is based on a VSI (vertical scanning interferometry) measurement method. A high-resolution CCD (charge coupled device) camera is used. The light source is white light, the measurement magnification is 10 times, and the measurement range is 477. µm × 357.8 µm, lateral sampling (LateralSampling) 0.38 µm, speed (speed) 1, backscan (backscan) 5 µm, length (length) 5 µm, threshold (Threshold) 5%, After the filtering process of the items removal (TermsRemoval), the data processing is performed. The results are shown in Table 4.
<Yxy表色系統> 於藉由上述處理(1)至(5)所獲得之全部之實施例1至23及比較例1至9之銅箔之Yxy表色系統中,可藉由色彩計SM-T45(Suga Test Instruments股份有限公司),使用45°照明0°受光、光源C光2度視野(鹵素燈),測定Y、x、y。結果如表4所示。<Yxy color measurement system> In the Yxy color measurement system of the copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above processes (1) to (5), a color meter SM can be used. -T45 (Suga Test Instruments Co., Ltd.), measuring Y, x, y using 45 ° illumination and 0 ° light reception, C light source 2 degree field of view (halogen lamp). The results are shown in Table 4.
<針孔> 將藉由上述處理(1)至(5)所獲得之全部之實施例1至23及比較例1至9之表面處理銅箔切斷成200 mm×200 mm之大小,利用光穿透法標記針孔。針對200 mm×200 mm尺寸之表面處理銅箔5片(計0.2 m2 ),利用光學顯微鏡確認直徑,計算30 µm以上之孔作為針孔。利用光學顯微鏡所觀察之針孔有圓形針孔、不定形針孔,但均測定針孔之長徑(於針孔之外周上相隔最遠之2點間之距離)作為直徑。基於所獲得之針孔之數量,算出每單位面積(m2 )之針孔之數量(個/m2 ),所得結果如表4所示。<Pinholes> The surface-treated copper foils of all of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above processes (1) to (5) were cut to a size of 200 mm × 200 mm, and light was used. Penetration marks the pinhole. For 200 pieces of 200 mm × 200 mm surface-treated copper foil (0.2 m 2 ), confirm the diameter with an optical microscope, and calculate a hole with a diameter of 30 μm or more as a pinhole. The pinholes observed with an optical microscope include circular pinholes and irregular pinholes, but the long diameter of the pinholes (the distance between the two points that are farthest apart on the outer periphery of the pinholes) are measured as the diameter. Based on the number of obtained pinholes, the number of pinholes per unit area (m 2 ) (number / m 2 ) was calculated. The results are shown in Table 4.
[表4]
<蝕刻因數> 其次,於藉由上述處理(1)至(6)所獲得之全部之實施例1至23及比較例1至9之表面處理銅箔,使用乾式抗蝕劑膜,藉由乾式蝕刻,形成L&S=100 µm/200 µm之線/間隔之抗蝕劑圖案。使用氯化銅及鹽酸作為蝕刻液,進行配線圖案之蝕刻後,測定蝕刻因數。所謂蝕刻因數(Ef),係指將表面處理銅箔之箔厚設為H,將所形成之配線圖案之底部寬度設為B,將所形成之配線圖案之頂部寬度設為T時,以下式表示之值。 Ef=2H/(B-T)<Etching factor> Next, on the surface-treated copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above processes (1) to (6), a dry resist film was used, and Etch to form a resist pattern with a line / space of L & S = 100 µm / 200 µm. After etching the wiring pattern using copper chloride and hydrochloric acid as an etching solution, the etching factor was measured. The so-called etching factor (Ef) means that when the thickness of the surface-treated copper foil is set to H, the bottom width of the formed wiring pattern is set to B, and the top width of the formed wiring pattern is set to T, the following formula The value represented. Ef = 2H / (B-T)
若蝕刻因數小,則配線圖案中之側壁之垂直性崩塌,線寬窄之微細配線圖案時,有導致斷線之危險性。於本實施例中,針對成為適當蝕刻(抗蝕劑端部與銅箔圖案之底部對齊)位置時之圖案,利用顯微鏡測定底部寬度及頂部寬度,算出蝕刻因數。結果如表4所示。If the etching factor is small, the verticality of the sidewalls in the wiring pattern collapses, and in the case of a fine wiring pattern with a narrow line width, there is a risk of disconnection. In this example, the bottom width and top width of the pattern at the appropriate etching (resist end aligned with the bottom of the copper foil pattern) position were measured with a microscope to calculate the etching factor. The results are shown in Table 4.
<雷射開口數> 將藉由上述處理所獲得之全部之實施例1至23及比較例1至9之表面處理銅箔2片加熱並加壓接合於基板FR4之兩面,製作CCL(覆銅積層板)。接下來,藉由CO2 雷射開孔加工機,進行100次射出之雷射開孔加工,計算開口數。針對照射能量為50 W之情形及8 W之情形,分別照射固定之照射時間10 msec,藉此開口,將開口數示於表4。照射能量低之8 W時,亦可將開口數之減少較少之樣品評價為具有高雷射加工性之樣品。<Number of Laser Openings> Two pieces of the surface-treated copper foils of all the Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above processes were heated and pressure-bonded to both sides of the substrate FR4 to produce CCL (copper-clad Laminate). Next, a CO 2 laser hole processing machine was used to perform 100 times of laser hole processing to calculate the number of openings. For the case where the irradiation energy is 50 W and the case where 8 W, the irradiation is performed for a fixed irradiation time of 10 msec, respectively. When the irradiation energy is low at 8 W, a sample with a small decrease in the number of openings can also be evaluated as a sample with high laser processability.
<操作性:褶皺不良數> 將藉由上述處理(1)至(5)所獲得之全部之實施例1至23及比較例1至9之表面處理銅箔切斷成200 mm×200 mm之大小,將表面處理銅箔與基板FR4在170℃、1.5 MPa(壓力)下加熱1小時,進行加壓接合,製作30片基板,以目視確認褶皺,將存在褶皺之基板計算為褶皺不良數1片,藉此將褶皺不良產生數示於表4。藉此,評價表面處理銅箔之操作性。<Operability: Number of Wrinkle Defects> Cut all the surface-treated copper foils of Examples 1 to 23 and Comparative Examples 1 to 9 obtained by the above processes (1) to (5) into 200 mm × 200 mm Size, the surface-treated copper foil and the substrate FR4 were heated at 170 ° C and 1.5 MPa (pressure) for 1 hour, and pressure bonding was performed to produce 30 substrates. Wrinkles were visually confirmed, and the number of wrinkled substrates was calculated as the number of defective wrinkles. 1 Table 4 shows the number of occurrence of wrinkle defects. With this, the operability of the surface-treated copper foil was evaluated.
如由表4可知,實施例1至23中,全部拉伸強度為400 MPa至700 MPa,在220℃加熱2小時後之拉伸強度為300 MPa以上,箔厚為7 µm以下,雷射照射面之展開面積比(Sdr)滿足25%至120%,如評價結果所示,可知針孔數為20以下,Ef為2.0以上,8 W之雷射開口數為90以上,褶皺不良數為3以下,針孔少,雷射加工性優異,操作性亦優異。As can be seen from Table 4, in Examples 1 to 23, all tensile strengths were 400 MPa to 700 MPa, and the tensile strength after heating at 220 ° C for 2 hours was 300 MPa or more, the foil thickness was 7 µm or less, and laser irradiation The spread area ratio (Sdr) of the surface satisfies 25% to 120%. As shown in the evaluation results, it can be seen that the number of pinholes is 20 or less, Ef is 2.0 or more, the number of laser openings of 8 W is 90 or more, and the number of defective wrinkles is 3 Hereinafter, the number of pinholes is small, the laser processability is excellent, and the workability is also excellent.
相對於此,可知比較例1至9中,拉伸強度為400 MPa至700 MPa,在220℃加熱2小時後之拉伸強度滿足300 MPa以上,但比較例2、3、5至7、9中,雷射照射面之展開面積比(Sdr)未滿足25%至120%,因此全部8 W之雷射開口數未達90,雷射開口性不良。另外,可知比較例1及4中,因表面處理銅箔之製造條件而針孔之產生超過20,比較例8因為箔厚為9 µm,所以雷射開口性不良。In contrast, in Comparative Examples 1 to 9, the tensile strength is 400 MPa to 700 MPa, and the tensile strength after heating at 220 ° C for 2 hours satisfies 300 MPa or more. However, Comparative Examples 2, 3, 5 to 7, 9 However, the spreading area ratio (Sdr) of the laser irradiation surface did not satisfy 25% to 120%. Therefore, the number of laser openings of all 8 W was less than 90, and the laser opening properties were poor. In addition, in Comparative Examples 1 and 4, it was found that pinholes exceeded 20 due to the manufacturing conditions of the surface-treated copper foil, and Comparative Example 8 had a poor laser aperture because the foil thickness was 9 µm.
基於上述之評價結果,針對實施例1至21及比較例1至9之表面處理銅箔,將照射能量為8 W時之開口數與針孔之產生數之關係示於圖3之圖表。如由圖3明確可知,實施例之表面處理銅箔之開口數多,針孔之產生少,雷射加工性優異,相對於此,比較例之表面處理銅箔之開口數少,或針孔之產生多,雷射加工性差。Based on the above evaluation results, for the surface-treated copper foils of Examples 1 to 21 and Comparative Examples 1 to 9, the relationship between the number of openings and the number of pinholes when the irradiation energy was 8 W is shown in the graph of FIG. 3. As is clear from FIG. 3, the number of openings of the surface-treated copper foil of the example is large, the number of pinholes is small, and the laser processability is excellent. In contrast, the number of openings of the surface-treated copper foil of the comparative example is small, or pinholes There are many occurrences, and laser processability is poor.
另外,基於上述之評價結果,針對實施例1至21及比較例1至9之表面處理銅箔,將常態下之拉伸強度與針孔之產生數之關係示於圖3之圖表。如由圖3明確可知,實施例之表面處理銅箔之開口數多,針孔之產生少,雷射加工性優異,相對於此,比較例之表面處理銅箔之開口數少,或針孔之產生多,雷射加工性差。 [產業上之可利用性]In addition, based on the above-mentioned evaluation results, the relationship between the tensile strength in the normal state and the number of pinholes produced in the surface treated copper foils of Examples 1 to 21 and Comparative Examples 1 to 9 is shown in the graph of FIG. 3. As is clear from FIG. 3, the number of openings of the surface-treated copper foil of the example is large, the number of pinholes is small, and the laser processability is excellent. In contrast, the number of openings of the surface-treated copper foil of the comparative example is small, or pinholes There are many occurrences, and laser processability is poor. [Industrial availability]
根據本發明,可提供一種表面處理銅箔,其拉伸強度高,線間或線寬經微細化,蝕刻性、雷射加工性及薄箔操作性優異,且針孔少,産業上之可利用性高。According to the present invention, it is possible to provide a surface-treated copper foil which has high tensile strength, finer inter-line or line width, excellent etching properties, laser processability, and thin foil operability, and has fewer pinholes, which is industrially feasible. High usability.
101‧‧‧析出銅箔101‧‧‧precipitated copper foil
102‧‧‧滾筒102‧‧‧Roller
103‧‧‧拋光輪裝置103‧‧‧Polishing wheel device
105‧‧‧陰極還原裝置105‧‧‧cathode reduction device
106‧‧‧電解液106‧‧‧ Electrolyte
圖1係表示先前之電解銅箔之析出裝置之圖。 圖2係表示具有陰極還原步驟之電解銅箔之析出裝置之圖。 圖3係表示實施例及比較例中的雷射開口數與針孔數之關係之圖。 圖4係表示實施例及比較例中的常態之拉伸強度與褶皺不良數之關係之圖。FIG. 1 is a diagram showing a conventional precipitation device for electrolytic copper foil. FIG. 2 is a view showing a precipitation device of an electrolytic copper foil having a cathode reduction step. FIG. 3 is a graph showing the relationship between the number of laser openings and the number of pinholes in Examples and Comparative Examples. FIG. 4 is a graph showing the relationship between the normal tensile strength and the number of wrinkle defects in Examples and Comparative Examples.
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國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無Information on foreign deposits (please note in order of deposit country, institution, date, and number) None
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| JP2019173164A (en) * | 2018-03-28 | 2019-10-10 | 日立金属株式会社 | Method of manufacturing aluminium foil |
| JP7247015B2 (en) * | 2019-05-08 | 2023-03-28 | 古河電気工業株式会社 | Electrolytic copper foil, surface-treated copper foil using the electrolytic copper foil, and copper-clad laminate and printed wiring board using the surface-treated copper foil |
| JP7270579B2 (en) * | 2019-06-19 | 2023-05-10 | 金居開發股▲分▼有限公司 | Micro-roughened electrodeposited copper foil and copper-clad laminate |
| CN111455416B (en) * | 2020-05-29 | 2021-02-09 | 佛冈建滔实业有限公司 | Preparation process of high-mechanical-property electrolytic copper foil of high-precision circuit board |
| CN115046367B (en) * | 2022-05-26 | 2024-04-09 | 九江德福科技股份有限公司 | A method and device for drying the surface of electrolytic copper foil |
| CN116061514A (en) * | 2022-12-28 | 2023-05-05 | 江西生益科技有限公司 | Copper clad laminate and printed circuit board |
| CN120660453A (en) * | 2023-03-23 | 2025-09-16 | 三井金属矿业株式会社 | Method for manufacturing printed circuit board |
| WO2024195538A1 (en) * | 2023-03-23 | 2024-09-26 | 三井金属鉱業株式会社 | Method for manufacturing printed wiring board |
| TWI876541B (en) * | 2023-09-19 | 2025-03-11 | 南亞塑膠工業股份有限公司 | Manufacturing method of roughened copper foil |
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