TWI415742B - A method for manufacturing fine grain copper foil with high peel strength and environmental protection for printed circuit board tool - Google Patents
A method for manufacturing fine grain copper foil with high peel strength and environmental protection for printed circuit board tool Download PDFInfo
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- TWI415742B TWI415742B TW100107503A TW100107503A TWI415742B TW I415742 B TWI415742 B TW I415742B TW 100107503 A TW100107503 A TW 100107503A TW 100107503 A TW100107503 A TW 100107503A TW I415742 B TWI415742 B TW I415742B
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- copper foil
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 239000011889 copper foil Substances 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title abstract description 12
- 230000007613 environmental effect Effects 0.000 title abstract description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000009713 electroplating Methods 0.000 claims abstract description 23
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- 239000010949 copper Substances 0.000 claims abstract description 21
- 238000007788 roughening Methods 0.000 claims abstract description 20
- 229910000365 copper sulfate Inorganic materials 0.000 claims abstract description 8
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims abstract description 8
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims description 28
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 claims description 15
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 14
- 229910052708 sodium Inorganic materials 0.000 claims description 14
- 239000011734 sodium Substances 0.000 claims description 14
- 238000005406 washing Methods 0.000 claims description 12
- 150000004689 octahydrates Chemical class 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 4
- 238000005554 pickling Methods 0.000 claims description 2
- PYRZPBDTPRQYKG-UHFFFAOYSA-N cyclopentene-1-carboxylic acid Chemical compound OC(=O)C1=CCCC1 PYRZPBDTPRQYKG-UHFFFAOYSA-N 0.000 claims 2
- 150000004686 pentahydrates Chemical class 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 16
- 229910001297 Zn alloy Inorganic materials 0.000 abstract description 5
- 239000003792 electrolyte Substances 0.000 abstract description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 abstract description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052804 chromium Inorganic materials 0.000 abstract description 4
- 239000011651 chromium Substances 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 239000006087 Silane Coupling Agent Substances 0.000 abstract 1
- 231100000331 toxic Toxicity 0.000 abstract 1
- 230000002588 toxic effect Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 19
- 239000000243 solution Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 239000000843 powder Substances 0.000 description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 10
- 238000005868 electrolysis reaction Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000012360 testing method Methods 0.000 description 6
- 239000007822 coupling agent Substances 0.000 description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 5
- HJTAZXHBEBIQQX-UHFFFAOYSA-N 1,5-bis(chloromethyl)naphthalene Chemical compound C1=CC=C2C(CCl)=CC=CC2=C1CCl HJTAZXHBEBIQQX-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 206010028980 Neoplasm Diseases 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- GOLCXWYRSKYTSP-UHFFFAOYSA-N arsenic trioxide Inorganic materials O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910002482 Cu–Ni Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- JOBBRIRILCAFIA-UHFFFAOYSA-N ac1l9md0 Chemical compound O.O.O.O.O.O.O.O.O JOBBRIRILCAFIA-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical group C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- -1 tungsten ion compound Chemical class 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- LEHOTFFKMJEONL-UHFFFAOYSA-N Uric Acid Chemical compound N1C(=O)NC(=O)C2=C1NC(=O)N2 LEHOTFFKMJEONL-UHFFFAOYSA-N 0.000 description 1
- TVWHNULVHGKJHS-UHFFFAOYSA-N Uric acid Natural products N1C(=O)NC(=O)C2NC(=O)NC21 TVWHNULVHGKJHS-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007567 Zn-Ni Inorganic materials 0.000 description 1
- 229910007564 Zn—Co Inorganic materials 0.000 description 1
- 229910007614 Zn—Ni Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- RRIWRJBSCGCBID-UHFFFAOYSA-L nickel sulfate hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-]S([O-])(=O)=O RRIWRJBSCGCBID-UHFFFAOYSA-L 0.000 description 1
- 229940116202 nickel sulfate hexahydrate Drugs 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229940116269 uric acid Drugs 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- RZLVQBNCHSJZPX-UHFFFAOYSA-L zinc sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Zn+2].[O-]S([O-])(=O)=O RZLVQBNCHSJZPX-UHFFFAOYSA-L 0.000 description 1
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- Electroplating Methods And Accessories (AREA)
Abstract
Description
本發明主要係關於一種適用於各種規格的印刷電路基板之表面細晶粒銅箔及其製造方法。The present invention relates to a surface fine-grained copper foil suitable for use in printed circuit boards of various specifications and a method of manufacturing the same.
有關應用在印刷電路基板之銅箔,一般係以硫酸銅電解液電化學電鍍方法在陰極DRUM面上電沉積銅於原箔,再經過後段處理製程而成為最終目的成品。表面粗化處理銅箔是以熱壓或壓延金屬片、銅或鎳來形成用之於電機、電子產業作為印刷電路基板之基礎材料,與高玻璃轉移溫度(Tg)的環氧樹脂基材、酚醛樹脂基材、聚醯亞胺樹脂基材壓合(mat)成銅箔覆層積層板,使用於印刷電路基板的製造。The copper foil applied to the printed circuit board is generally deposited by electroplating copper on the cathode DRUM surface with a copper sulfate electrolyte electrochemical plating method, and then subjected to a post-processing process to become a final finished product. The surface roughening copper foil is formed by hot pressing or rolling a metal sheet, copper or nickel to form a base material for a motor, an electronics industry as a printed circuit board, and a high glass transition temperature (Tg) epoxy substrate. A phenol resin substrate and a polyimide resin substrate are mat-formed into a copper foil-clad laminate, which is used for the production of a printed circuit board.
印刷電路基板用經表面粗化處理的銅箔所要求的基本特性,主要是銅箔與各種環氧、酚醛、聚醯亞胺等樹脂基材的基板間須有優異充分的剝離強度,且於熱壓及後續的各種處理過程,其剝離強度亦必須維持在標準以上。因此,此種銅箔必須對於酸、鹼具有優異的耐化學藥品、耐熱、耐酸等特性之外,在形成銅電路圖案作成配線板的蝕刻過程中,亦要求不可有殘留物質造成毛邊現象的優異蝕刻特性。為使銅箔具備有上述各種特性,通常乃先進行所謂使銅箔表面粗化的粗化處理,後續再進行抗熱層、防銹層及矽烷偶合劑層等習知的後處理製程。The basic characteristics required for the copper foil subjected to the surface roughening treatment of the printed circuit board are mainly excellent peeling strength between the copper foil and the substrate of the resin substrate such as various epoxy, phenolic or polyimine. The peel strength must also be maintained above the standard for hot pressing and subsequent processing. Therefore, such a copper foil must have excellent chemical resistance, heat resistance, acid resistance and the like for acids and alkalis, and in the etching process for forming a copper circuit pattern to form a wiring board, it is also required to have excellent burrs caused by residual substances. Etching characteristics. In order to provide the copper foil with various characteristics described above, a roughening treatment for roughening the surface of the copper foil is generally performed, followed by a conventional post-treatment process such as a heat-resistant layer, a rust-preventing layer, and a decane coupling agent layer.
近年來,隨著筆記型電腦、行動電話的普及化,使用高玻璃轉移溫度(Tg)基材的環氧樹脂印刷電路基板的數量有逐年增加趨勢,與傳統使用的FR-4基材比較,銅箔和高Tg基材的剝離強度顯然較低。為提昇銅箔和高Tg基材的剝離強度,一般都以提昇銅箔粗糙面的粗糙度來克服。然而,此種提昇粗糙面的方法極易發生掉銅粉(粉落)和蝕刻殘銅的異常現象。In recent years, with the popularization of notebook computers and mobile phones, the number of epoxy printed circuit boards using high glass transfer temperature (Tg) substrates has been increasing year by year, compared with the conventional FR-4 substrates. The peel strength of copper foil and high Tg substrates is clearly lower. In order to improve the peel strength of the copper foil and the high Tg substrate, the roughness of the rough surface of the copper foil is generally overcome. However, this method of lifting the rough surface is highly prone to the abnormal phenomenon of copper powder (powder falling) and etching residual copper.
另一方面,由於電子元件的高密度化、高性能化和小型化,印刷電路基板的電路也朝向高密度化,線路寬度亦往微細化的方向發展。因此,印刷電路基板用的銅箔亦須具有適用於高密度化、微細化線路的低粗度特性。然而此低粗度特性的銅箔與電路基板壓合的剝離強度將會變差,且上述各種銅箔特性的要求亦無法達成,造成矛盾狀況的發生。On the other hand, due to the increase in density, performance, and miniaturization of the electronic components, the circuit of the printed circuit board is also increased in density, and the line width is also progressing toward miniaturization. Therefore, the copper foil for a printed circuit board must also have a low-thickness characteristic suitable for a high-density and fine-grained wiring. However, the peel strength of the copper foil having such a low-thickness property and the circuit substrate is deteriorated, and the requirements of the various copper foil characteristics described above cannot be achieved, causing a contradiction.
為能一方面具有低粗度、一方面又能維持銅箔所需的各項特性要求,習知已被公開的現行技術有:二元合金Cu-Ni系耐熱性剝離強度及耐鹽酸性較優,但不能使用鹼性蝕刻液蝕刻之日本專利特開昭52-145769號及特開昭55-058502號,Cu-Co系之日本專利特開昭58-028893號及特開平2-292895號能以CuCl2 亦可以鹼性蝕刻液蝕刻,但其耐熱性剝離強度及耐鹽酸性比Cu-Ni系處理差,Cu-Ni-Co系之日本專利特開平02-292894號,日本特開平8-236930號由含有鉻及鎢的金屬離子及由釩、鎳、鐵、鈷、鋅、鉬選出的一種或以上的金屬離子酸性鍍銅液的粗化處理方法,以及日本特開平11-256389號採用含有鉬、鐵、鎳、鎢中的一種的金屬離子酸性電鍍液的粗化處理方法等以及實際上為克服耐熱剝離強度,比較有效的銅箔粗化處理,採用有添加砷、銻、鉍或硒等的酸性銅電解溶液(特公昭54-38053號,特公昭53-39327號),其砷、銻、鉍等元素被添加影響電解液廢水處理及環保上問題。然而,上所揭示之習知技術皆只能解決一部份銅箔特性問題,而無法完全兼顧環保並維持銅箔各項所需之剝離強度、耐熱、耐酸、耐吸濕、粉落及蝕刻特性。In order to be able to maintain the various characteristics required for the copper foil on the one hand, and to maintain the copper foil on the one hand, the prior art which has been disclosed is that the binary alloy Cu-Ni is excellent in heat-resistant peel strength and hydrochloric acid resistance. However, Japanese Patent Laid-Open No. Sho 52-145769 and Japanese Patent Laid-Open No. 55-058502, which are etched by an alkaline etching solution, and Japanese Patent Laid-Open No. Sho 58-028893 and No. 2-292895 of the Japanese Patent Laid-Open No. CuCl 2 can also be etched with an alkaline etching solution, but its heat-resistant peel strength and hydrochloric acid resistance are inferior to that of Cu-Ni-based treatment, and Japanese Patent Laid-Open No. 02-292894, No. 02-292894, Japanese Patent Laid-Open No. Hei-- No. 236930 roughening treatment method of metal ion acid copper plating solution containing metal ions containing chromium and tungsten and one or more selected from vanadium, nickel, iron, cobalt, zinc, molybdenum, and Japanese Patent Application No. 11-256389 A roughening treatment method of a metal ion acid plating solution containing one of molybdenum, iron, nickel, and tungsten, and a copper foil roughening treatment which is effective for overcoming heat-resistant peel strength, and is added with arsenic, antimony, bismuth or Acidic copper electrolytic solution such as selenium (Special Gong Zhao 54-38053, special No. Sho 53-39327), which is arsenic, antimony, bismuth and other elements are on the waste water treatment and environmental issues electrolyte added impact. However, the conventional techniques disclosed above can only solve a part of the characteristics of the copper foil, and cannot completely balance the environmental protection and maintain the peel strength, heat resistance, acid resistance, moisture absorption resistance, powder fall and etching characteristics required for the copper foil. .
鑑於上述缺失,本發明之目的提供一種印刷電路基板用銅箔,其被接著面與合成樹脂基板間具有充分接著力(強度),在蝕刻處理上無粉落現象,粗化處理之電解液及電解後的廢水亦無環保問題的印刷電路基板用銅箔。In view of the above-described deficiencies, an object of the present invention is to provide a copper foil for a printed circuit board having a sufficient adhesion force (strength) between a bonding surface and a synthetic resin substrate, a powder-free phenomenon in etching treatment, and an electrolytic solution for roughening treatment and The waste water after electrolysis also has no copper foil for printed circuit boards.
發明人等以多年的工作經驗及針對上列擬解決的課題研究、實驗、探討結果發現將銅箔被接著面先以硫酸銅酸性溶液酸洗去除附著在表面上的污垢或穢物後,再以加有微量鎢離子化合物的硫酸銅電鍍浴施于電鍍時可使電沉積銅瘤不只電沉積於由微細之粒狀突起群所構成之銅箔接著面上的山峰,亦能有效深鍍並均勻沉積於山谷位置,這對於銅箔被接著面與合成樹脂壓合的粗化處理的好壞影響銅箔的特性甚矩,基于此見解完成了本發明。The inventor, etc., based on years of work experience and research, experiments, and investigations on the topics to be solved, found that the copper foil was pickled with a copper sulfate acid solution to remove dirt or dirt adhering to the surface. When electroplating a copper sulfate plating bath with a trace amount of a tungsten ion compound is applied to the plating, the electrodeposited copper tumor can be deposited not only on the mountain surface of the copper foil formed by the fine granular protrusion group, but also can be effectively deep-plated. The present invention has been completed based on the knowledge that the copper foil is uniformly deposited in the valley position, which affects the characteristics of the copper foil by the roughening treatment of the copper foil by the bonding surface and the synthetic resin.
本發明的目的係提供一種解決前述習知技術上的問題點,即藉由特殊電解液及步驟的電解處理,使銅箔被接著面上的銅瘤不只電沉積於被接著面上的山峰,且亦能有效深鍍並均勻沉積於山谷位置。其所形成的銅瘤尺寸細小且數量多,特別是在低粗度的狀況下,仍具兼顧各項銅箔特性要求的銅箔表面,適用於各型印刷電路基板的銅箔。SUMMARY OF THE INVENTION The object of the present invention is to solve the above-mentioned problems in the prior art, that is, by special electrolytic solution and electrolytic treatment of steps, the copper foil on the adhesive surface of the copper foil is not only electrodeposited on the mountain surface on the contact surface. It can also be effectively plated and evenly deposited in the valley. The copper tumor formed is small in size and large in number, and in particular, in the case of low-thickness, the surface of the copper foil which satisfies the requirements of various copper foil characteristics is suitable for the copper foil of each type of printed circuit board.
為達成上述發明目的,本發明之印刷電路基板用銅箔區別于最接近的現有技術的技術特徵是在於銅箔表面的粗化處理步驟;1)將低粗度之被接著面銅箔先以具硫酸銅的硫酸液酸洗去除附在銅箔表面上的污垢或穢物,2)投入設有由硫酸銅、硫酸、磷鎢酸鈉化合物所組成之電鍍浴,經電鍍處理形成一粗化處理層;再於該粗化處理層上以習知技術作抗熱,形成Zn合金抗熱層;繼之於抗熱層上再作防銹形成電解鹼鉻防銹層;最後於該防銹層上形成矽烷偶合劑處理層。In order to attain the above object, the copper foil for a printed circuit board of the present invention is distinguished from the closest prior art technical feature in the roughening treatment step of the surface of the copper foil; 1) the copper foil of the low-thickness surface is first The sulfuric acid solution with copper sulfate is pickled to remove dirt or smear attached to the surface of the copper foil, and 2) an electroplating bath composed of a compound of copper sulfate, sulfuric acid and sodium phosphotungstate is introduced, and a roughening is formed by electroplating. Treating layer; further heat-treating on the roughened layer by conventional techniques to form a heat-resistant layer of Zn alloy; followed by rust prevention on the heat-resistant layer to form an electrolytic alkali chromium anti-rust layer; finally, the rust-proof layer A layer of a decane coupling agent is formed on the layer.
依據本發明,上述特殊電鍍液的電鍍浴組成是係以含有硫酸銅五水合物:80~90g/l,硫酸:90~100g/l,及微量磷鎢酸鈉十八水合物(分子式為2Na2 O.P2 O5 .12WO3 .18H2 O,可溶於水粒狀白色粉末,作為分拆鉀、尿酸之試劑):15~55ppm所組成,並以溫度:20~75℃,電流密度:30~45A/dm2 ,電鍍時間:3~5秒與予電鍍。According to the present invention, the electroplating bath composition of the above special plating solution is composed of copper sulfate pentahydrate: 80-90 g/l, sulfuric acid: 90-100 g/l, and a trace amount of sodium phosphotungstate octahydrate (molecular formula: 2Na) 2 O.P 2 O 5 .12WO 3 .18H 2 O, soluble in water granular white powder, as a reagent for separating potassium and uric acid): 15~55ppm, with temperature: 20~75°C, current Density: 30~45A/dm 2 , plating time: 3~5 seconds and pre-plating.
此要特別強調的是,若酸性洗滌液的硫酸銅五水合物濃度低於245g/l,硫酸濃度亦低於90g/l以下洗滌不良;硫酸銅五水合物濃度高於265g/l,則會產生結晶塊狀物造成銅箔有凹陷不平,硫酸濃度亦高於100g/l以上時有氧化斑點現象。若是電鍍浴的硫酸銅五水合物:80g/l以下會產生掉銅粉(粉落);90g/l以上則會剝離強度不足。硫酸:90g/l以下,則電鍍質傳變差;100g/l以上則會蝕刻不良。磷鎢酸鈉十八水合物:15ppm以下,無深鍍效果;55ppm以上,會產生掉銅粉(粉落)。溫度:20℃以下,則會剝離強度不足;75℃以上,會產生掉銅粉(粉落)。電流密度:30A/dm2 以下,則會剝離強度不足;45A/dm2 以上,會產生掉銅粉(粉落)。電鍍時間:3秒以下,則會剝離強度不足;5秒以上,會產生掉銅粉(粉落)。It should be particularly emphasized that if the concentration of copper sulfate pentahydrate in the acidic washing solution is lower than 245 g/l, the sulfuric acid concentration is also lower than 90 g/l or less; if the concentration of copper sulfate pentahydrate is higher than 265 g/l, The formation of crystal lumps causes the copper foil to be uneven, and the sulfuric acid concentration is higher than 100 g/l or more. If the copper sulfate pentahydrate of the electroplating bath: 80 g/l or less will produce copper powder (powder); if it is 90 g/l or more, the peeling strength will be insufficient. When the sulfuric acid is 90 g/l or less, the plating quality is poorly deteriorated; if it is 100 g/l or more, the etching is poor. Sodium phosphotungstate octahydrate: 15ppm or less, no deep plating effect; 55ppm or more, copper powder (powder) will be produced. Temperature: Below 20 ° C, the peel strength is insufficient; at 75 ° C or more, copper powder (powder) is generated. When the current density is 30 A/dm 2 or less, the peel strength is insufficient; when 45 A/dm 2 or more, copper powder (powder) is generated. Plating time: 3 seconds or less, the peeling strength is insufficient; 5 seconds or more, copper powder (powder falling) is generated.
為避免熱變色,一般習知的方法都是在粗化處理層上進行Zn合金抗熱層處理作為Zn合金鍍層例如Zn-Ni、Zn-Co、Zn-Mo或Zn-Ni-Co等。其抗熱層電解液的組成是,Zn化合物:1~10g/l,其他金屬化合物:0.5~15g/l,pH:4~10,以溫度:35~60℃,電流密度:0.1~4A/dm2 ,電鍍時間:3~5秒電解。In order to avoid thermal discoloration, a conventional method is to perform a Zn alloy heat-resistant layer treatment on a roughened layer as a Zn alloy plating layer such as Zn-Ni, Zn-Co, Zn-Mo or Zn-Ni-Co. The composition of the anti-thermal layer electrolyte is: Zn compound: 1~10g/l, other metal compounds: 0.5~15g/l, pH: 4~10, temperature: 35~60°C, current density: 0.1~4A/ Dm 2 , plating time: 3~5 seconds electrolysis.
並另於Zn合金抗熱層形成後,再於抗熱層上電鍍鹼鉻形成防銹層及噴塗矽烷偶合劑處理層。其防銹層電解液是以鉻酸濃度:1~12g/l,液鹼濃度:20~45g/l,溫度:35~75℃,電流密度:0.1~3A/dm2 ,電鍍時間:3~5秒的條件實施可得到較佳的效果,而矽烷偶合劑處理層是將0.1~1.0%重量矽烷偶合劑以純水稀釋後噴灑於防銹層上加以烘乾。After the formation of the Zn alloy heat-resistant layer, the alkali chromium is electroplated on the heat-resistant layer to form a rust-preventing layer and a decane coupling agent treatment layer. The anti-rust layer electrolyte is chromic acid concentration: 1~12g/l, liquid alkali concentration: 20~45g/l, temperature: 35~75°C, current density: 0.1~3A/dm 2 , electroplating time: 3~ The 5 second condition is carried out to obtain a better effect, and the decane coupling agent treatment layer is prepared by diluting 0.1 to 1.0% by weight of the decane coupling agent with pure water and spraying it on the rustproof layer.
以下,以較佳實施例和比較例具體說明本發明,惟本發明權利範圍不受此等實施例所限定。Hereinafter, the present invention will be specifically described by way of preferred embodiments and comparative examples, but the scope of the invention is not limited by the examples.
取厚度30~40μm粗面表面粗糙度Ra=0.82μm以下的電解用銅箔;Taking a copper foil for electrolysis having a thickness of 30 to 40 μm and a surface roughness Ra of 0.80 μm or less;
(1)以硫酸銅五水合物255g/l,硫酸95g/l先進行酸洗處理5秒後水洗;(1) 255 g/l of copper sulfate pentahydrate and 95 g/l of sulfuric acid were first subjected to pickling treatment for 5 seconds and then washed with water;
(2)投入於由硫酸銅五水合物86g/l,硫酸95g/l及磷鎢酸鈉十八水合物26ppm所組成溫度為25℃的電鍍浴,以電流密度42A/dm2 電解3秒處理銅箔之被接著面;(2) An electroplating bath consisting of 86 g/l of copper sulfate pentahydrate, 95 g/l of sulfuric acid and 26 ppm of sodium phosphotungstate octahydrate, at 25 ° C, was electrolyzed at a current density of 42 A/dm 2 for 3 seconds. The copper foil is bonded to the surface;
(3)水洗後,用由硫酸銅五水合物300g/l,硫酸100g/l,浴溫60℃之電鍍浴,以電流密度32.5A/dm2 電解3秒,使其形成由銅組成的粗化層,(3) After washing with water, electrolyze for 3 seconds at a current density of 32.5 A/dm 2 with an electroplating bath of 300 g/l of copper sulfate pentahydrate, 100 g/l of sulfuric acid and a bath temperature of 60 ° C to form a thick copper composition. Layer,
(4)水洗此銅箔後再於由銅組成的粗化層上使用(2)相同的電鍍液,以電流密度40A/dm2 施予電鍍3秒形成複合金屬層;(4) After washing the copper foil, the same plating solution is used on the roughened layer composed of copper, and electroplating is performed for 3 seconds at a current density of 40 A/dm 2 to form a composite metal layer;
(5)水洗此銅箔並於複合金屬層上,再採用與(3)相同的電鍍液,以電流密度36A/dm2 施予電鍍3秒形成完整的粗化層(請參第一圖;該圖所示銅瘤不只電沉積於山峰亦能有效深鍍並均勻 沉積於山谷位置。)(5) Washing the copper foil on the composite metal layer, and applying the same plating solution as (3), applying a current density of 36 A/dm 2 for 3 seconds to form a complete rough layer (refer to the first figure; The copper tumor shown in the figure is not only electrodeposited on the mountain peak but also effectively plated and uniformly deposited in the valley.)
(6)再以水洗此銅箔後,於其粗化層上,使用硫酸鋅七水合物9g/l,硫酸鎳六水合物3.5g/l,pH 9.5的電鍍浴,以電流密度0.5A/dm2 施予電鍍處理5秒形成抗熱層;(6) After washing the copper foil with water, on the roughened layer, a plating bath of zinc sulfate heptahydrate 9 g/l, nickel sulfate hexahydrate 3.5 g/l, pH 9.5 was used, and the current density was 0.5 A/ Dm 2 is subjected to a plating treatment for 5 seconds to form a heat resistant layer;
(7)再以水洗此具抗熱層之銅箔並於抗熱層上,使用鉻酸1.6g/l,液鹼25g/l的電鍍浴,以電流密度1A/dm2 施予電解3秒形成防銹層;(7) further washing the copper foil with the heat-resistant layer on the heat-resistant layer, using an electroplating bath of 1.6 g/l of chromic acid and 25 g/l of liquid alkali, and applying electrolysis for 3 seconds at a current density of 1 A/dm 2 Forming a rustproof layer;
(8)最後以水洗此具防銹層之銅箔並於其防銹層上,以3-環氧丙氧基三甲基矽烷0.5重量%之水溶液噴灑塗佈後於150℃烘箱乾燥5秒。上述步驟所得銅箔之各特性表示於表二。(8) Finally, the copper foil with the anti-rust layer was washed with water and sprayed on the anti-rust layer with an aqueous solution of 3-glycidoxytrimethylnonane 0.5% by weight, and dried in an oven at 150 ° C for 5 seconds. . The characteristics of the copper foil obtained in the above steps are shown in Table 2.
重複實施例1,但實施例1的(2)由硫酸銅五水合物86g/l,硫酸95g/l及磷鎢酸鈉十八水合物26ppm組成溫度為25℃的電鍍浴,以電流密度42A/dm2 電解3秒處理銅箔被接著面之磷鎢酸鈉十八水合物26ppm改為17ppm之外,其餘與實施例1同。上述步驟所得銅箔之各特性表示於表二。Example 1 was repeated, but (2) of Example 1 consisted of copper sulfate pentahydrate 86 g/l, sulfuric acid 95 g/l and sodium phosphotungstate octahydrate 26 ppm in an electroplating bath at a temperature of 25 ° C at a current density of 42 A. The /dm 2 electrolysis was performed for 3 seconds, and the copper foil was changed to 26 ppm from the surface of the sodium phosphotungstate octahydrate hydrate to 26 ppm, and the rest was the same as in Example 1. The characteristics of the copper foil obtained in the above steps are shown in Table 2.
重複實施例1,但實施例1的(2)由硫酸銅五水合物86g/l,硫酸95g/l及磷鎢酸鈉十八水合物26ppm組成溫度為25℃的電鍍浴,以電流密度42A/dm2 電解3秒處理銅箔被接著面之磷鎢酸鈉十八水合物26ppm改為52ppm之外,其餘與實施例1同。上述步驟所得銅箔之各特性表示於表二。Example 1 was repeated, but (2) of Example 1 consisted of copper sulfate pentahydrate 86 g/l, sulfuric acid 95 g/l and sodium phosphotungstate octahydrate 26 ppm in an electroplating bath at a temperature of 25 ° C at a current density of 42 A. The /dm 2 electrolysis was performed for 3 seconds, and the copper foil was changed to 26 ppm by the surface of the sodium phosphotungstate octahydrate hydrate of 26 ppm, and the rest was the same as in Example 1. The characteristics of the copper foil obtained in the above steps are shown in Table 2.
重複實施例1,但實施例1的(2)由硫酸銅五水合物86g/l,硫酸95g/l及磷鎢酸鈉十八水合物26ppm組成溫度為25℃的電鍍浴,以電流密度42A/dm2 電解3秒處理銅箔被接著面之硫酸95g/l改為100g/l之外,其餘與實施例1同。上述步驟所得銅箔之各特性表示於表二。Example 1 was repeated, but (2) of Example 1 consisted of copper sulfate pentahydrate 86 g/l, sulfuric acid 95 g/l and sodium phosphotungstate octahydrate 26 ppm in an electroplating bath at a temperature of 25 ° C at a current density of 42 A. The /dm 2 electrolysis was performed for 3 seconds, and the copper foil was changed to 95 g/l of the sulfuric acid of the surface to 100 g/l, and the rest was the same as in Example 1. The characteristics of the copper foil obtained in the above steps are shown in Table 2.
重複實施例1,但實施例1的(2)由硫酸銅五水合物86g/l, 硫酸95g/l及磷鎢酸鈉十八水合物26ppm組成溫度為25℃的電鍍浴,以電流密度42A/dm2 電解3秒處理銅箔被接著面之硫酸95g/l改為90g/l、磷鎢酸鈉十八水合物26ppm改為17ppm之外,其餘與實施例1同。上述步驟所得銅箔之各特性表示於表二。Example 1 was repeated, but (2) of Example 1 consisted of copper sulfate pentahydrate 86 g/l, sulfuric acid 95 g/l and sodium phosphotungstate octahydrate 26 ppm in an electroplating bath at a temperature of 25 ° C at a current density of 42 A. The /dm 2 electrolysis was performed for 3 seconds, and the copper foil was changed to 95 g/l of the sulfuric acid of the surface and changed to 90 g/l, and the 26 ppm of the sodium phosphotungstate octahydrate was changed to 17 ppm, and the rest was the same as in Example 1. The characteristics of the copper foil obtained in the above steps are shown in Table 2.
1)重複實施例1,但實施例1的(2)由硫酸銅五水合物86g/l,硫酸95g/l及磷鎢酸鈉十八水合物26ppm組成溫度為25℃的電鍍浴,以電流密度42A/dm2 電解3秒處理銅箔被接著面之硫酸95g/l改為90g/l、磷鎢酸鈉十八水合物26ppm改為三氧化二砷528ppm之外,其餘與實施例1同;2)於前述1)之銅箔被接著面上,採用由硫酸銅五水合物255g/l,硫酸95g/l,電鍍浴溫度55℃之電鍍浴,以電流密度39.5A/dm2 電解處理3秒使其形成由銅組成的粗化層;3)水洗後再於由銅組成的粗化層上採用與1)相同的電鍍液,以電流密度31.5A/dm2 施以電解3秒處理形成複合金屬層;4)最後再以水洗此銅箔後於前述之複合金屬層上,採用與2)相同的電鍍液,以電流密度40.6A/dm2 施以電解處理3秒形成完整的粗化層(請參第二圖;該圖所示之銅瘤只電沉積於山峰位置,無深鍍效果),上述步驟所得銅箔之各特性表示於表二。1) Example 1 was repeated, but (2) of Example 1 consisted of copper sulfate pentahydrate 86 g/l, sulfuric acid 95 g/l and sodium phosphotungstate octahydrate 26 ppm in an electroplating bath at a temperature of 25 ° C. Density 42A/dm 2 Electrolytic treatment for 3 seconds The copper foil was changed to 95 g/l of sulfuric acid 95 g/l, and 26 ppm of sodium phosphotungstate octahydrate was changed to 528 ppm of arsenic trioxide. The rest was the same as in Example 1; 2) The copper foil of the above 1) was subjected to electrolytic treatment at a current density of 39.5 A/dm 2 for 3 seconds using a plating bath of copper sulfate pentahydrate 255 g/l, sulfuric acid 95 g/l, electroplating bath temperature 55 ° C on the adhesion surface. It forms a roughened layer composed of copper; 3) after washing with water, the same plating solution as 1) is used on the roughened layer composed of copper, and electrolysis is performed for 3 seconds at a current density of 31.5 A/dm 2 to form a composite metal. 4) Finally, the copper foil is washed with water and then on the composite metal layer described above, using the same plating solution as 2), and subjected to electrolytic treatment for 3 seconds at a current density of 40.6 A/dm 2 to form a complete rough layer ( Please refer to the second figure; the copper tumor shown in the figure is only deposited on the mountain peak without deep plating effect. The characteristics of the copper foil obtained in the above step are shown in Table 2.
重複比較例1,但比較例1中除三氧化二砷528ppm改為396ppm之外,其餘與比較例1同。上述步驟所得銅箔之各特性表示於表二。Comparative Example 1 was repeated, except that in Comparative Example 1, except that 528 ppm of arsenic trioxide was changed to 396 ppm, the same as in Comparative Example 1. The characteristics of the copper foil obtained in the above steps are shown in Table 2.
重複比較例1,但比較例1中除三氧化二砷528ppm改為132ppm之外,其餘亦與比較例1同。上述步驟所得銅箔之各特性表示於表二。Comparative Example 1 was repeated, except that in Comparative Example 1, except that 528 ppm of arsenic trioxide was changed to 132 ppm, the same as in Comparative Example 1. The characteristics of the copper foil obtained in the above steps are shown in Table 2.
重複比較例1,但比較例1中除三氧化二砷528ppm改為66ppm之外,其餘亦與比較例1同。上述步驟所得銅箔之各特性表 示於表二。Comparative Example 1 was repeated, except that in Comparative Example 1, except that 528 ppm of arsenic trioxide was changed to 66 ppm, the same as in Comparative Example 1. The characteristics of the copper foil obtained in the above steps Shown in Table 2.
本發明用之於實施例及比較例之物理特性測試項目為:The physical property test items used in the embodiments and comparative examples of the present invention are:
將NP-180(南亞公司製鹵素樹脂)基材與銅箔非平滑面進行壓合作成寬32mil的積層板試驗片,利用剝離強度拉力機進行測定。A substrate of NP-180 (a halogen resin manufactured by Nanya Corporation) and a non-smooth surface of a copper foil were pressed to form a laminate test piece having a width of 32 mil, and the measurement was performed by a peel strength tensile machine.
將試驗片置於177℃之烘箱烘烤240小時後,測定剝離強度。After the test piece was baked in an oven at 177 ° C for 240 hours, the peel strength was measured.
將試驗片置於18%HCl溶液中浸漬1小時後,測定剝離強度惡化率。After the test piece was immersed in an 18% HCl solution for 1 hour, the peel strength deterioration rate was measured.
將試驗片置於壓力設定為1atm,溫度為121℃之壓力鍋中2小時後,測定剝離強度惡化率。The test piece was placed in a pressure cooker set to a pressure of 1 atm and a temperature of 121 ° C for 2 hours, and the peel strength deterioration rate was measured.
將濾紙粗的一面以指尖按在銅箔非平滑面全寬左側位置,由左至右滑移約30公分,測試完的濾紙再與樣品卡比較,判定等級。Press the thick side of the filter paper with the fingertip on the left side of the full width of the non-smooth surface of the copper foil, and slide it from left to right by about 30 cm. The tested filter paper is then compared with the sample card to determine the grade.
<粉落等級之評價基準><Evaluation criteria for powder level>
○:0-1級○: 0-1 level
△:≦1-2級△: ≦ 1-2
×:≦2級×: ≦2 level
將試驗片製作成為線寬/線距:75/75(μm),置於含氯化銅265.9g/l,雙氧水150ml/l,HCl 224ml/l的酸性蝕刻液中,於溫度55℃條件下浸漬5分鐘後,以3%NaOH溶液於溫度48℃條件下去膜。水洗後,電鍍鎳層,然後切片,以OM(光學顯微鏡)及SEM(掃瞄式電子顯微鏡)觀察毛邊情形。The test piece was made into a line width/line spacing: 75/75 (μm), and placed in an acidic etching solution containing copper chloride 265.9 g/l, hydrogen peroxide 150 ml/l, and HCl 224 ml/l at a temperature of 55 ° C. After immersion for 5 minutes, the film was allowed to stand at 3% NaOH solution at a temperature of 48 °C. After washing with water, a nickel layer was electroplated, and then sliced, and the burr was observed by OM (optical microscope) and SEM (scanning electron microscope).
<蝕刻性等級之評價基準><Evaluation criteria for etching grade>
○:蝕刻後,基材上無殘留的毛邊現象。○: There was no residual burr phenomenon on the substrate after etching.
△:蝕刻後,基材上有若干殘留的毛邊現象。△: After etching, there are some residual burrs on the substrate.
×:蝕刻後,基材上有甚多殘留的毛邊現象。×: After etching, there are many residual burrs on the substrate.
由表二,本發明實施例1~5之剝離強度、耐熱剝離強度、耐HCl性、耐吸濕性等品質特性皆相當優良,雖本發明實施例1~5之非平滑面粗糙度較比較例1~4為低,粉落及蝕刻性等品質特性亦相當優良。相對於此,比較例的各項特性亦皆較本發明之實施例差。例如本發明實施例的剝離強度、耐熱剝離強度、耐HCl性、耐吸濕性等品質特性相較於比較例,大約各提昇11.7%、52.4%、26.3%、11.6%以上。From Table 2, the peeling strength, heat-resistant peel strength, HCl resistance, moisture absorption resistance and the like of the inventive examples 1 to 5 are all excellent, although the non-smooth surface roughness of the examples 1 to 5 of the present invention is comparatively comparative. 1~4 is low, and the quality characteristics such as powder drop and etching property are also excellent. In contrast, the characteristics of the comparative examples are also inferior to the embodiments of the present invention. For example, the quality characteristics such as peel strength, heat-resistant peel strength, HCl resistance, and moisture absorption resistance of the examples of the present invention are approximately 11.7%, 52.4%, 26.3%, and 11.6% higher than those of the comparative examples.
如上述,藉由本發明實施例製造方法所製造出來的細晶粒表面銅箔,其非平滑面之粗糙度雖較比較例低,但仍具有高剝離強度、高耐熱剝離強度、高耐HCl性、高耐吸濕性及粉落、蝕刻等優良品 質特性,適用於各種規格的印刷電路基板。表面粗化處理亦不使用有毒例如砷等之元素;同時電鍍時間短、效率高,兼具環保與高產速之優點。As described above, the fine-grain surface copper foil produced by the manufacturing method of the embodiment of the present invention has a low roughness of the non-smooth surface, but has high peel strength, high heat-resistant peel strength, and high HCl resistance. High resistance to moisture absorption, powder falling, etching, etc. The quality characteristics are applicable to printed circuit boards of various specifications. The surface roughening treatment also does not use elements such as arsenic, etc.; at the same time, the plating time is short, the efficiency is high, and the advantages of environmental protection and high production speed are combined.
第一圖:本發明實施例1之SEM(掃瞄式電子顯微鏡)圖。First Fig.: SEM (Scanning Electron Microscope) chart of Example 1 of the present invention.
第二圖:本發明比較例1之SEM(掃瞄式電子顯微鏡)圖。Second Fig.: SEM (Scanning Electron Microscope) chart of Comparative Example 1 of the present invention.
Claims (5)
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| TW100107503A TWI415742B (en) | 2011-03-07 | 2011-03-07 | A method for manufacturing fine grain copper foil with high peel strength and environmental protection for printed circuit board tool |
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| CN115821345A (en) * | 2022-12-30 | 2023-03-21 | 江苏铭丰电子材料科技有限公司 | Surface treatment method of copper foil for printed circuit board |
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| WO1996025838A1 (en) * | 1995-02-16 | 1996-08-22 | Mitsui Mining & Smelting Co., Ltd. | Copper foil and high-density multi-layered printed circuit board using the copper foil for inner layer circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO1996025838A1 (en) * | 1995-02-16 | 1996-08-22 | Mitsui Mining & Smelting Co., Ltd. | Copper foil and high-density multi-layered printed circuit board using the copper foil for inner layer circuit |
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