TW201709439A - Electronic component package and stacked package structure including same - Google Patents

Abstract

An electronic component package includes: a frame containing a metal-based material or a ceramic-based material and having a through hole; an electronic component disposed in the through hole; and an insulating portion covering at least an upper portion of the frame and an upper portion of the electronic component a portion; at least partially disposed between the frame and the insulating portion; and a redistribution portion disposed on one side of the frame and the electronic component.

Description

Electronic component package and stacked package structure including the same

The present invention relates to an electronic component package and a stacked package structure including the same.

The electronic component package is defined as a packaging technology for electrically connecting an electronic component to a printed circuit board (PCB) (for example, a motherboard of an electronic device, etc.) and protecting the electronic component from external influences, and Techniques in which components are embedded in a printed circuit board such as an interposer substrate differ. At the same time, one of the current significant trends in the development of technology related to electronic components is to reduce the size of electronic components. Thus, in the field of packaging, with the rapid increase in demand for miniaturized electronic components and the like, it has been required to implement an electronic component package having a compact size and including a plurality of leads.

To meet the above technical requirements, one proposed packaging technique is a wafer level package (WLP) that utilizes the redistribution wiring of the electrode pads of the electronic components formed on the wafer. Examples of the wafer level package include a fan-in wafer level package and a fan-out wafer level package. In particular, fan-out wafer level packages have reduced size and facilitate implementation of multiple pins. Thus, recently, fan-out wafer level packaging has been actively developed.

At the same time, as the performance of electronic components is improved, heat dissipation structures that can efficiently treat heat generated in electronic components have become important. Further, it is necessary to significantly reduce the warpage which occurs due to the difference between the coefficients of thermal expansion (CTE) of the respective members constituting the electronic component package.

Aspects of the present invention can provide an electronic component package having improved heat dissipation characteristics and warpage characteristics and a stacked package structure including the same.

According to the aspect of the invention, it is possible to introduce a frame which can enhance the rigidity of the electronic component package by using a material having excellent heat dissipation characteristics such as an Fe-Ni-based alloy or a ceramic-based material and which is suitable for improving warpage characteristics.

Hereinafter, the present invention will be explained with reference to the drawings. In the drawings, the shapes and dimensions of the components may be exaggerated and shortened for clarity.

Electronic device

FIG. 1 is a block diagram schematically illustrating an example of an electronic device system. Referring to FIG. 1, a motherboard 1010 can be housed in the electronic device 1000. Wafer related components 1020, network related components 1030, other components 1040, etc. can be physically connected to and/or electrically connected to motherboard 1010. The components can be coupled to other components as will be described below to form various signal lines 1090.

The wafer related component 1020 may include: a memory chip such as a volatile memory (eg, dynamic random access memory (DRAM)), non-volatile memory (eg, read only memory (read only) Memory, ROM), flash memory, etc.; application processor chips, such as a central processing unit (eg, a central processing unit (CPU)), a graphics processor (eg, a graphics processing unit (graphic processing unit) GPU)), digital signal processor, cryptographic processor, microprocessor, microcontroller, etc.; logic chip, such as analog-to-digital converter, application-specific integrated circuit (application-specific integrated circuit, ASIC), etc.; and similar components. However, the wafer related component 1020 is not limited thereto, but may include other types of wafer related components. Further, the members 1020 can be combined with each other.

Network related components 1030 may include, for example, the following protocols: wireless fidelity (Wi-Fi) (Institute of Electrical and Electronics Engineers (IEEE) 802.11 family, etc.), global interoperability microwave access (worldwide) Interoperability for microwave access (WiMAX) (IEEE 802.16 family, etc.), IEEE 802.20, long term evolution (LTE), evolution data only (Ev-DO), high speed packet access + (high speed Packet access +, HSPA+), high speed downlink packet access + (HSDPA+), high speed uplink packet access + (HSUPA+), enhanced data GSM environment (enhanced data GSM) Environment, EDGE), global system for mobile communications (GSM), global positioning system (GPS), general packet radio service (GPRS), code division multiple access (code) Division multiple access, CDMA), Time division multiple access (TDMA), digital enhanced cordless telecommunications (DECT), Bluetooth, 3G, 4G, 5G, and any other wireless named after the above agreement Agreements and cable agreements. However, network related component 1030 is not limited thereto and may include any of a number of other wireless standards or protocols or wired standards or protocols. Further, the members 1030 may be combined with each other with the wafer related member 1020 described above.

Other components 1040 may include a high frequency inductor, a ferrite inductor, a power inductor, a ferrite bead, a low temperature co-firing ceramic (LTCC), and an electromagnetic interference. , EMI) filters, multilayer ceramic capacitors (MLCC), etc. However, the other members 1040 are not limited thereto, but may include passive members or the like for various other purposes. Moreover, the members 1040 can be combined with each other with the wafer related member 1020 and/or the network related member 1030 described above.

Depending on its type, electronic device 1000 can include other components that can be physically connected to and/or electrically connected to motherboard 1010 or that may not be physically connected to and/or not electrically connected to motherboard 1010. The other components may include, for example, a camera 1050, an antenna 1060, a display 1070, a battery 1080, an audio codec (not shown), a video codec (not shown), a power amplifier (not shown) Out), compass (not shown), accelerometer (not shown), gyroscope (not shown), speaker (not shown), mass storage (eg, hard drive) A drive machine (not shown), a compact disk (CD) (not shown), a digital versatile disk (DVD) (not shown), and the like. However, the other components are not limited thereto, but may include other components for various purposes depending on the type of the electronic device 1000.

The electronic device 1000 can be a smart phone, a personal digital assistant, a digital camera, a digital still camera, a network system, a computer, a monitor, a tablet, a laptop, a portable internet machine ( Netbook), TV, video game console, smart watches, etc. However, the electronic device 1000 is not limited thereto, but may be any other electronic device for processing data.

2 is a diagram schematically illustrating an example of an electronic component package used in an electronic device. The electronic component package can be used in various electronic devices 1000 as described above for various purposes. For example, the main board 1110 can be housed in the main body 1101 of the smart phone 1100, and the various electronic components 1120 can be physically connected to and/or electrically connected to the main board 1110. Moreover, another component (eg, camera 1130) that may be physically coupled to and/or electrically coupled to main board 1110 or that may not be physically connected to and/or not electrically connected to main board 1110 may be housed in body 1101. Here, some of the electronic components 1120 in the electronic component 1120 may be wafer related components as described above, and the electronic component package 100 may be, for example, an application processor in a wafer related component, but is not limited thereto.

Electronic component package

FIG. 3 is a cross-sectional view schematically illustrating an example of an electronic component package. Fig. 4 is a schematic plan view of the electronic component package taken along line I-I' shown in Fig. 3. 3 and 4, the electronic component package 100A according to an example may include a frame 110 having a through hole 110X, an electronic member 120 disposed in the through hole 110X, at least an upper portion covering the frame 110, and an upper portion of the electronic member 120. The insulating portion 150 is at least partially disposed at a joint portion 111 between the frame 110 and the insulating portion 150, and redistribution portions 130 and 140 disposed under the frame 110 and the electronic member 120.

The purpose of using the frame 110 may be to support the electronic component package 100A, and by the frame 110, the rigidity of the electronic component package 100A can be maintained and the uniformity of the thickness of the electronic component package 100A can be ensured. The frame 110 may have an upper surface 110A and a lower surface 110B opposite the upper surface 110A. Here, the through hole 110X may penetrate between the upper surface 110A and the lower surface 110B. The electronic component 120 may be disposed in the through hole 110X.

The frame 110 may contain a metal-based material or a ceramic-based material. Since the difference between the coefficient of thermal expansion (CTE) of the frame 110 and the coefficient of thermal expansion (CTE) of the electronic member 120 can be remarkably reduced, the warpage of the electronic component package 100A can be reduced. Further, since the metal-based material or the ceramic-based material has a large thermal conductivity higher than that of a general-purpose molding resin, a pre-preg, or the like, heat dissipation characteristics can also be improved. Further, as a process of forming the through hole 110X, an etching process may be performed without performing a laser drilling process. Therefore, defects caused by foreign matter can be fundamentally removed. As the metal-based material or the ceramic-based material, an alloy having excellent rigidity and thermal conductivity can be used. Here, the alloy may be, for example, an alloy containing at least iron such as an Fe—Ni-based alloy (Hengfan steel), but is not limited thereto. Alternatively, ceramics such as a zirconia-based (ZrO ₂ ) material, an alumina-based (Al ₂ O ₃ ) material, a tantalum carbide (SiC) material, and a tantalum nitride (Si ₃ N ₄ ) material are used therein. The same effect can be achieved in the case where the material is substituted for the alloy.

The material of the frame 110 may have a thermal conductivity of 1 W/mK or greater than 1 W/mK, for example, from about 10 W/mK to about 15 W/mK. A general-purpose molded resin having a thermal conductivity of less than 1 W/mK, a prepreg, and the like are particularly disadvantageous in terms of heat dissipation. However, in the case where the frame 110 contains a metal-based material or a ceramic-based material having excellent thermal conductivity, the thermal conductivity of the metal-based material or the ceramic-based material is high (1 W/mK or more than 1 W/mK), and Therefore, the heat dissipation characteristics can be improved. The thermal conductivity can be measured using a thermal conductivity measurement tool as is known in the related art.

The material of the frame 110 may have a CTE of 10 ppm/° C. or less than 10 ppm/° C., for example, from about 1 ppm/° C. to about 8 ppm/° C. The electronic component (for example, an integrated circuit) has a CTE of about 2 ppm/° C. to 3 ppm/° C., and a general molded resin, a prepreg, or the like has a height of 12 ppm/° C. to 50 ppm/° C. CTE. Thus, the difference between the CTE of the electronic component and the CTE of the general molded resin, the prepreg or the like can be large, and thus warpage can be easily generated. Conversely, in the case where the frame 110 contains a metal-based material or a ceramic-based material, the CTE of the frame may be reduced to 10 ppm/° C. or less than 10 ppm/° C. As a result, the difference between the CTE of the frame and the CTE of the electronic component can be significantly reduced, and thus the warpage of the electronic component package between the processes or the warpage of the finished product package can be obtained. improve. The CTE can be measured using a thermo-mechanical analyzer or the like in a temperature range of, for example, 100 ° C to 400 ° C.

The material of the frame 110 may have an elastic modulus of 100 GPa or more, for example, about 130 GPa to 160 GPa. The general molded resin, the prepreg, and the like have an elastic modulus of several tens of GPa. Therefore, it is difficult to maintain rigidity. Conversely, in the case where the material of the frame 110 has an elastic modulus of 100 GPa or more, the rigidity can be additionally ensured, and thus the process property can be improved, and the warpage of the finished product of the electronic component package can be reduced . The modulus of elasticity is defined as the ratio between stress and deformation and can be measured by a tensile test as specified in KS M 3001, KS M 527-3, ASTM D882, and the like.

The thickness of the frame 110 in its cross section is not particularly limited and may be designed according to the thickness of the electronic member 120 in its cross section. For example, depending on the type of electronic component 120, the thickness of the frame 110 may be about 100 μm to 500 μm.

The joint portion 111 can facilitate the bonding between the frame 110 and the insulating portion 150. The joint portion 111 may be disposed between at least the frame 110 and the insulating portion 150, and may be formed, for example, on the upper surface 110A and/or the lower surface 110B of the frame 110. Further, the joint portion 111 may be formed on the inner wall of the through hole 110X. The bonding portion 111 may be formed of a conductive material such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), or an alloy thereof. The joint portion 111 may have a larger thermal conductivity than the metal-based material or the ceramic-based material used to form the frame 110. Further, the heat dissipation characteristics of the electronic component package 100A can be improved by the joint portion 111 formed on the inner wall of the through hole 110X or the like.

The bond portion 111 can be connected to a redistribution pattern that acts as a ground (GND) pattern in the conductive pattern 132 of the redistribution layer 130. Heat emitted from the electronic component 120 may be conducted to the ground (GND) pattern in the conductive pattern 132 via the bonding portion 111 to thereby be dissipated to the lower portion of the electronic component package 100A. The ground (GND) pattern can also be used to block electromagnetic waves. However, the heat is not necessarily limited to being dissipated as described above, and even in the case where the bonding portion 111 is not connected to the redistribution pattern of the redistribution layer 130, it can be dissipated to the lower portion by radiation, convection, or the like. section.

The electronic component 120 can be various active components (eg, diodes, vacuum tubes, transistors, etc.) or passive components (eg, inductors, capacitors, resistors, etc.). Alternatively, the electronic component 120 may be an integrated circuit (IC) wafer, which represents a wafer in which hundreds to millions of or more components are integrated together. If desired, the electronic component 120 can be an electronic component in which the integrated circuit is packaged in a flip chip form. The integrated circuit can be an application processor chip, such as a central processing unit (eg, a CPU), a graphics processor (eg, a GPU), a digital signal processor, a cryptographic processor, a microprocessor, a microcontroller, and the like. But it is not limited to this.

The electronic component 120 can have electrode pads 120P that are electrically connected to the redistribution portions 130 and 140. The purpose of using the electrode pad 120P may be to electrically connect the electronic component 120 to the outside, and the material of the electrode pad 120P is not particularly limited as long as it is a conductive material. For example, the conductive material may be copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), or an alloy thereof. But it is not limited to this. The electrode pad 120P can be redistributed by the redistribution portions 130 and 140. The electrode pad 120P may have an embedded form or a protruding form.

In the case where the electronic component 120 is an integrated circuit, the electronic component 120 may have a body (not denoted by reference numerals), a protective layer (not denoted by reference numerals), and an electrode pad 120P. The body can be formed on the basis of, for example, an active wafer. In this case, a base material in which bismuth (Si), germanium (Ge), gallium arsenide (GaAs), or the like is used as a main body can be used. The protective layer may be used to protect the host from external factors, and may be formed of, for example, an oxide layer, a nitride layer, or the like, or may be formed of a double layer composed of an oxide layer and a nitride layer. Conductive materials such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), or alloys thereof can be used as the electrode pad 120P s material. The layer on which the electrode pad 120P is formed may become an active layer.

The thickness of the electronic member 120 in its cross section is not particularly limited and may vary depending on the kind of the electronic member 120. For example, in the case where the electronic component 120 is an integrated circuit, the thickness of the electronic component 120 may be about 100 μm to 480 μm, but is not limited thereto. In order to accommodate the electronic component 120 in the through hole 110X of the frame 110, the frame 110 may include electrons penetrated by the through hole 110X and spaced apart from the redistribution portions 130 and 140 by no more than the upper surface of the electronic component 120 and the opposite electrons thereof Any layer of the member 120 on which the distance between the lower surfaces of the electrode pads 120P is formed is formed.

The purpose of using the redistribution portions 130 and 140 may be to redistribute the electrode pads 120P of the electronic component 120. The tens to hundreds of electrode pads 120P having various functions can be redistributed by the redistribution portions 130 and 140, and can be physically connected via the first external connection terminal 165 which will be explained below according to their functions. To and/or electrically connected to the outside.

The redistribution portions 130 and 140 may be formed by redistribution layers 130 and 140, which respectively include insulating layers 131 and 141, conductive patterns 132 and 142 disposed on the insulating layers 131 and 141, and through the insulating layer. Conductive paths 133 and 143 of 131 and 141. Although the redistribution sections 130 and 140 are respectively formed by the plurality of redistribution layers 130 and 140, in the electronic component package 100A according to the example, the redistribution sections 130 and 140 are not limited thereto, and may be associated with FIGS. 3 and 4 Different individual redistribution layers are formed as shown. Moreover, depending on the particular details of the design, redistribution portions 130 and 140 may also be formed from a plurality of redistribution layers having more layers.

An insulating material can be used as the material of the insulating layers 131 and 141. Here, the insulating material may be: a thermosetting resin such as an epoxy resin; a thermoplastic resin such as a polyimide resin; and having, for example, glass fibers and/or inorganic fillers immersed in the thermosetting resin and the thermoplastic resin. Resins of reinforcing materials, such as prepregs, Ajinomoto Build up Film (ABF), FR-4, Bismaleimide Triazine (BT), and the like. In the case where a photosensitive insulating material such as a photo imagable dielectric (PID) resin is used as the material of the insulating layers 131 and 141, the insulating layers 131 and 141 may be formed to have a reduced thickness and may be Easy to implement fine pitch. The materials of the insulating layers 131 and 141 may be identical to each other or may be different from each other if necessary. The thickness of the insulating layers 131 and 141 is also not particularly limited. For example, the thickness of the insulating layers 131 and 141 other than the conductive patterns 132 and 142 may be about 5 μm to 20 μm, and when the thicknesses of the conductive patterns 132 and 142 are taken into consideration, the thickness of the insulating layers 131 and 141 may be It is about 15 μm to 70 μm.

The conductive patterns 132 and 142 may also function as a redistribution pattern and/or a pad pattern, and for example, copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni). A conductive material such as lead (Pb), or an alloy thereof may be used as the material of the conductive patterns 132 and 142. The conductive patterns 132 and 142 can perform various functions depending on the design of the corresponding layer. For example, the first wiring layer 112B may function as a ground (GND) pattern, a power (PWR) pattern, a signal (S) pattern, or the like as a redistribution pattern. Here, the signal (S) pattern may include various signals other than a ground (GND) pattern, a power (PWR) pattern, and the like, such as a data signal. In addition, the conductive patterns 132 and 142 may function as a via pad, an external connection terminal pad, or the like as a pad pattern. The thickness of the conductive patterns 132 and 142 is also not particularly limited, but may be, for example, about 10 μm to 50 μm.

If desired, a surface treatment layer can be further formed on the exposed portion of the conductive pattern 142. The surface treatment layer is not particularly limited as long as it is a person skilled in the related art, and can be, for example, electrolytic gold plating, electroless gold plating, organic solderability preservative (OSP), Or electroless tin plating, electroless nickel plating/substituted gold plating, direct immersion gold (DIG) plating, hot air solder leveling (HASL) ) formed.

The conductive vias 133 and 143 can electrically connect the conductive patterns 132 and 142 formed on different layers to each other and to the electrode pads 120P and the like, thereby forming an electrical path within the electronic component package 100A. Conductive materials such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), or alloys thereof may be used as the conductive path 133 And 143 materials. Conductive vias 133 and 143 can also be completely filled with a conductive material. Alternatively, a conductive material can be formed along the walls of the conductive vias 133 and 143. Further, the conductive paths 133 and 143 may have all shapes known in the related art, for example, a tapered shape in which the diameter of the passage becomes smaller toward the lower surface, a reverse tapered shape in which the diameter of the passage becomes larger toward the lower surface, and a cylinder Shape and so on.

The purpose of using the insulating portion 150 may be to substantially protect the electronic component 120. To this end, the insulating portion 150 may cover the electronic component 120. The cover form is not particularly limited and may be in the form of closing the electronic component 120. In the electronic component package 100A according to the example, the insulating portion 150 may also cover the frame 110. Here, the meaning of the insulating portion 150 covering the target member is that the insulating portion 150 indirectly covers the target member and does not directly contact the target member, and the insulating portion 150 because a separate member is interposed between the insulating portion 150 and the target member. Directly covering the target component. That is, the cover form may be in any form that protects at least the upper portion of the target member. For example, even in the case where the joint portion 110 or the like is formed on the inner surface 110A of the frame 110 and/or the inner wall of the through hole 110X as shown in FIGS. 3 and 4, it can be understood that the insulating portion 150 is covered. Frame 110. At the same time, the insulating portion 150 may be disposed in the remaining space in the through hole 110X of the frame 110. In this case, the insulating portion 150 can function as a binder depending on the detailed material thereof, and can also be used to reduce buckling of the electronic member 120.

The insulating portion 150 may include a plurality of layers formed of a plurality of materials. For example, the space within the through hole 110X may be filled with the first insulating portion, and the frame 110 and the electronic member 120 may be covered with the second insulating portion. Alternatively, while filling the space in the through hole 110X with the first insulating portion, the frame 110 and the electronic member 120 may be covered with a predetermined thickness, and the second insulating portion may be covered again with a predetermined thickness on the first insulating portion. In addition to the above forms, various forms can be used.

The specific material of the insulating portion 150 is not particularly limited. For example, an insulating material may be used as the material of the insulating portion 150. Here, the insulating material may be: a thermosetting resin such as an epoxy resin; a thermoplastic resin such as a polyimide resin; and a reinforcing material such as glass fiber or inorganic filler immersed in the thermosetting resin and the thermoplastic resin. Resins such as prepregs, ABF, FR-4, BT, PID resins, and the like. Further, a conventional molding material such as an epoxy molding compound (EMC) can also be used.

The insulating portion 150 may have a lower modulus of elasticity than the material of the frame 110. For example, the insulating portion 150 may have a modulus of elasticity of 15 GPa or less, for example, about 50 MPa to 15 GPa. As the elastic modulus of the insulating portion 150 becomes relatively small, the warpage of the electronic component package 100A can be reduced by the buckling effect and the stress dispersing effect on the electronic member 120. In detail, since the insulating portion 150 is disposed in the space of the through hole 110X, the insulating portion 150 can have a buckling effect on the electronic member 120, and since the insulating portion 150 encapsulates the electronic member 120, the insulating portion 150 can be dispersed and lightened The stress generated in the electronic component 120. However, in the case where the elastic modulus of the insulating portion 150 is too small, the insulating portion 150 may be excessively deformed, and thus the insulating portion 150 may not be able to exert its essential function.

If necessary, the insulating portion 150 may contain conductive particles to block electromagnetic waves. For example, the conductive particles may be any material that can block electromagnetic waves, such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead. (Pb), solder, etc., but it is not specifically limited to this.

The pitch of the space in which the insulating portion 150 is filled in the through hole 110X is not particularly limited and can be optimized by those skilled in the art. For example, the pitch of the space filled in the through hole 110X with the insulating portion 150 may be about 10 μm to 150 μm, but is not limited thereto.

The electronic component package 100A according to an example may further include an outer layer 160 disposed under the redistribution portions 130 and 140. The purpose of using the outer layer 160 may be to protect the redistribution portions 130 and 140 from external physical or chemical damage or the like. The outer layer 160 can have a first opening 161 that exposes at least a portion of the conductive pattern 142 of the redistribution layer 140 of the redistribution portions 130 and 140. Although the first opening portion 161 may expose a portion of the upper surface of the conductive pattern 142, the first opening portion 161 may also expose a side surface of the conductive pattern 142 in some cases.

The material of the outer layer 160 is not particularly limited. For example, a solder resist can be used as the material of the outer layer 160. Further, the same material (for example, the same PID resin) as the insulating layers 131 and 141 of the redistribution portions 130 and 140 may be used as the material of the outer layer 160. Outer layer 160 is generally a single layer, but may be formed from multiple layers if desired.

The electronic component package 100A according to the example may further include a first external connection terminal 165 that is exposed from an opposite surface of the outer layer 160 opposite to a surface of the outer layer 160 that is connected to the redistribution portion 140. The purpose of using the first external connection terminal 165 may be to physically connect and/or electrically connect the electronic component package 100A to the outside. For example, the electronic component package 100A can be mounted on the main board of the electronic device by the first external connection terminal 165. The first external connection terminal 165 may be disposed in the first opening portion 161 and may be connected to the conductive pattern 142 exposed through the first opening portion 161. Therefore, the first external connection terminal 165 can also be electrically connected to the electronic component 120.

The first external connection terminal 165 may be formed of a conductive material such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), solder, or the like. However, it is not particularly limited to this. The first external connection terminal 165 may be a land, a ball, a pin, or the like. The first external connection terminal 165 may be formed of a plurality of layers or a single layer. In the case where the first external connection terminal 165 is formed of a plurality of layers, the first external connection terminal 165 may contain a copper post and solder, and in the case where the first external connection terminal 165 is formed of a single layer, the first external The connection terminal 165 may contain tin-silver solder or copper. However, this is merely an example, and the first external connection terminal 165 is not limited thereto.

Some of the first external connection terminals 165 may be disposed in the fan-out area. The fan-out area is defined as an area other than the area in which the electronic component is placed. That is, the electronic component package 100A according to the example may be a fan-out package. The fan-out package can have higher reliability than a fan-in package, can implement multiple I/O terminals, and can easily perform 3D interconnection. In addition, since the fan-out package can be mounted on the electronic device without using a separate substrate as compared to a ball grid array (BGA) package, a land grid array (LGA) package, or the like. The fan-out package can therefore be manufactured to have a reduced thickness and can have excellent price competitiveness.

The number, the pitch, the arrangement form, and the like of the first external connection terminals 165 are not particularly limited, and can be sufficiently modified by those skilled in the art in accordance with specific details of the design. For example, depending on the number of electrode pads 120P of the electronic component 120, the number of the first external connection terminals 165 may be tens to thousands. However, the number of the first external connection terminals 165 is not limited thereto, and may be tens to thousands or more, or tens to thousands or less.

5A to 5E are schematic views illustrating an example of a process of manufacturing the electronic component package 100A according to the example.

Referring to Figure 5A, a frame 110 can be prepared. Here, A of FIG. 5A is a plan view of the frame 110, and B of FIG. 5A illustrates a cross section of a portion of the A of FIG. 5A that can be used as a unit package. The frame 110 can be manufactured and used in a variety of sizes to facilitate mass production. That is, after the frame 110 having a large size is prepared, the plurality of electronic component packages 100A can be manufactured by a process which will be explained below. Then, the plurality of electronic component packages 100A may be divided into individual unit packages by a sawing process. There may be a fiducial mark in the frame 110 for achieving excellent pick-and-place (P&P). Since the position at which the electronic component 120 is mounted can be more clearly recognized by the fiducial mark, the integrity of the manufacturing can be improved.

Referring to FIG. 5B, a through hole 110X penetrating through the frame 110 may be formed. Here, A of FIG. 5B is a plan view of the frame 110 in which the through hole 110X is formed, and B in FIG. 5B illustrates a cross section of the partial area which can be used as a unit package in A of FIG. 5B. The method of forming the through hole 110X is not particularly limited, and can be performed by, for example, mechanical drilling and/or laser drilling, sandblasting using abrasive particles, dry etching using plasma, and wet etching using an etchant. Wait to execute. In the case where the through hole 110X is formed by etching, defects due to foreign matter can be fundamentally removed. The size, shape, and the like of the through hole 110X can be designed according to the size, shape, number, and the like of the electronic component 120 to be mounted.

Referring to FIG. 5C, a joint portion 111 may be formed on the upper surface 110A and the lower surface 110B of the frame 110 and the inner wall of the through hole 110X. Here, A of FIG. 5C is a plan view of the frame 110 in which the joint portion 111 is formed, and B of FIG. 5C illustrates a cross section of the portion of A of FIG. 5C that can be used as a unit package. The joint portion 111 can be formed by a conventional method such as electrolytic copper plating or electroless copper plating. More specifically, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), sputtering, subtractive processes, additive processes, and semi-additive processes (semi- The additive process (SAP), the modified semi-additive process (MSAP), and the like are used to form the bonding portion 111, but is not limited thereto.

Referring to FIG. 5D, the electronic component 120 may be disposed in the through hole 110X. The electronic component 120 may be placed face down so that the electrode pad 120P faces the lower portion. However, the electronic component 120 is not limited thereto, and may be placed face up if necessary. Next, the electronic component 120 can be encapsulated using the insulating portion 150. The insulating portion 150 may cover at least an upper portion of the frame 110 and at least an upper portion of the electronic member 120, and may be disposed in a space within the through hole 110X. The insulating portion 150 can be formed by a conventional method. For example, the insulating portion 150 can be formed by laminating a precursor of the insulating portion 150 and then hardening the precursor. Alternatively, the insulating portion 150 may be formed by applying a material for forming the insulating portion 150 and hardening the material to be closed in a lower portion of the through hole by a tape (not shown) or the like. The electronic component 120 is encapsulated in a state. The electronic component 120 can be fixed by hardening. As a method of laminating the precursor, for example, a method of laminating a precursor at a high temperature for a predetermined time, performing a pressure reduction process on the precursor, and then cooling the precursor to a chamber may be used. The precursor is cooled, cooled in a cold press process, and then the work tool is separated. As a method of applying the material, for example, a screen printing method of applying ink by a squeegee, a spray printing method of applying ink in the form of a mist, or the like can be used.

Referring to FIG. 5E, redistribution portions 130 and 140 may be formed under the frame 110 and the electronic member 120. In detail, the insulating layer 131 may be formed under the frame 110 and the electronic member 120. Next, a conductive pattern 132 and a conductive via 133 may be formed to form the redistribution portion 130. Next, an insulating layer 141 may be formed under the insulating layer 131. Next, a conductive pattern 142 and a conductive via 143 may be formed to form the redistribution portion 140.

The method can be carried out by, for example, a method of laminating the precursors of the insulating layers 131 and 141 and then hardening the precursor, a method of applying a material for forming the insulating layers 131 and 141, and then hardening the material. The insulating layers 131 and 141 are formed, but are not limited thereto. As a method of laminating the precursor, for example, a method of laminating a precursor at a high temperature for a predetermined time, performing a pressure reduction process on the precursor, and then cooling the precursor to a chamber may be used. The precursor is cooled, cooled in a cold press process, and then the work tool is separated. As a method of applying the material, for example, a screen printing method of applying ink by a squeegee, a spray printing method of applying ink in the form of a mist, or the like can be used. The hardening process, which is a post-process, can be a process that dries the material to incomplete hardening to use a photolithographic process or the like.

The conductive patterns 132 and 142 and the conductive paths 133 and 143 can be formed by a conventional method. First, via holes (not shown) may be formed using the mechanical drilling and/or laser drilling described above. Alternatively, in the case where the insulating layer 131 contains a PID resin or the like, the via hole may be formed by a photolithography method. Conductive patterns 132 and 142 and conductive vias 133 and 143 may also be formed by electrolytic copper plating, electroless copper plating, or the like using a dry film pattern.

After the redistribution portions 130 and 140 are formed, the outer layer 160 may be formed below the redistribution portions 130 and 140. The outer layer 160 may also be formed by laminating a precursor of the outer layer 160 and then hardening the precursor, applying a material for forming the outer layer 160, and then hardening the material. Next, a first opening portion 161 may be formed in the outer layer 160 to expose at least a portion of the conductive pattern 142. The first opening portion 161 may be formed using mechanical drilling and/or laser drilling. Alternatively, the first opening portion 161 may be formed by a photolithography method.

After the first opening portion 161 is formed in the outer layer 160, the first external connection terminal 165 disposed in the first opening portion 161 may be formed. The method of forming the first external connection terminal 165 is not particularly limited. That is, depending on the structure or form of the first external connection terminal 165, the first external connection terminal 165 can be formed by a method known in the related art. The first external connection terminal 165 may be fixed by reflow, and a portion of the first external connection terminal 165 may be embedded in the outer layer 160 to enhance the fixing force, and the rest of the first external connection terminal 165 may be Partially exposed, which increases reliability. In some cases, only the first opening portion 161 may be formed, and if necessary, the first external connection terminal 165 may be formed by a separate process from a customer who purchases the electronic component package 100A.

FIG. 6 is a diagram illustrating various cross sections of the frame 110 in the electronic component package 100A according to an example. The cross section of the frame 110 may have a vertical shape as shown in A in the case where the through hole 110X is formed using a computer numerical control (CNC) drilling, a punching method, or the like, in which one side is used. In the case where the laser drilling, etching method, or the like is formed to form the through hole 110X, it may have a bevel shape as shown in B, or may be formed in the case where the through hole 110X is formed using a double-sided laser drilling, an etching method, or the like. The double bevel shape shown in C, but is not limited to this.

FIG. 7 is a cross-sectional view schematically illustrating another example of an electronic component package. Fig. 8 is a schematic plan view of the electronic component package taken along line II-II' shown in Fig. 7. Referring to FIGS. 7 and 8, an electronic component package 100B according to another example may include a frame 110 having a through hole 110X, an electronic member 120 disposed in the through hole 110X, at least an upper portion covering the frame 110, and an upper portion of the electronic member 120. a portion of the insulating portion 150, a joint portion 111 at least partially disposed between the frame 110 and the insulating portion 150, and redistribution portions 130 and 140 disposed under the frame 110 and the electronic member 120, wherein the joint portion 111 may be formed in the frame Only upper surface 110A and lower surface 110B of 110 are on. That is, the joint portion 111 may not extend to the inner wall of the through hole 110X and may not be disposed on the inner wall of the through hole 110X. Since the corresponding members included in the electronic component package 100B according to another example are the same as those described above, they will not be explained.

9A to 9D are schematic views illustrating an example of a process of manufacturing an electronic component package 100B according to another example. In the description of the example of the process of manufacturing the electronic component package 100B, the content overlapping with the above will not be explained, and the content different from the above will be mainly explained.

Referring to FIG. 9A, a frame 110 may be prepared, and a joint portion 111 is formed on the upper surface 110A and the lower surface 110B of the frame 110. Here, A of FIG. 9A is a plan view of the frame 110 in which the joint portion 111 is formed, and B of FIG. 9A illustrates a cross section of the partial region which can be used as a unit package in A of FIG. 9A. A joint portion 111 may be formed over the entire upper surface 110A of the frame 110 and the entire lower surface 110B. Similarly, the frame 110 can be manufactured and used in a variety of sizes to facilitate mass production.

Referring to FIG. 9B, a through hole 110X penetrating through the joint portion 111 and the frame 110 may be formed. Here, A of FIG. 9B is a plan view of the frame 110 in which the through hole 110X is formed, and B of FIG. 9B illustrates a cross section of the partial area which can be used as a unit package in A of FIG. 9B. Similarly, the through hole 110X can be formed by, for example, mechanical drilling and/or laser drilling, a sandblasting method using abrasive particles, a dry etching method using a plasma, a wet etching method using an etchant, or the like. The size, shape, and the like of the through hole 110X can be designed according to the size, shape, number, and the like of the electronic component 120 to be mounted.

Referring to FIG. 9C, the electronic member 120 may be disposed in the through hole 110X. Next, the electronic component 120 can be encapsulated using the insulating portion 150. The insulating portion 150 may cover at least an upper portion of the frame 110 and at least an upper portion of the electronic member 120, and may be disposed in a space within the through hole 110X. The insulating portion 150 can be formed by, for example, laminating a precursor of the insulating portion 150 and then hardening the precursor. Alternatively, the insulating portion 150 may be formed by applying a material of the insulating portion 150 and then hardening the material to be encapsulated in a state in which a lower portion of the through hole is closed by a tape (not shown) or the like. Electronic component 120.

Referring to FIG. 9D, redistribution portions 130 and 140 may be formed under the frame 110 and the electronic member 120. In detail, the insulating layer 131 may be formed under the frame 110 and the electronic member 120. Next, a conductive pattern 132 and a conductive via 133 may be formed to form the redistribution portion 130. Next, an insulating layer 141 may be formed under the insulating layer 131. Next, a conductive pattern 142 and a conductive via 143 may be formed to form the redistribution portion 140. After the redistribution portions 130 and 140 are formed, the outer layer 160 may be formed below the redistribution portions 130 and 140. Next, a first opening portion 161 may be formed in the outer layer 160 to expose at least a portion of the conductive pattern 142. After the first opening portion 161 is formed in the outer layer 160, the first external connection terminal 165 disposed in the first opening portion 161 may be formed. In some cases, only the first opening portion 161 may be formed, and if necessary, the first external connection terminal 165 may be formed by a separate process from a customer who purchases the electronic component package 100B.

FIG. 10 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 11 is a schematic plan view of the electronic component package taken along line III-III' shown in Figure 10 . 10 and 11, the electronic component package 100C according to another example may include a frame 110 having a through hole 110X, an electronic member 120 disposed in the through hole 110X, at least an upper portion covering the frame 110, and an upper portion of the electronic member 120. A portion of the insulating portion 150, at least partially disposed at the joint portions 111A and 111B between the frame 110 and the insulating portion 150, and the redistribution portions 130 and 140 disposed under the frame 110 and the electronic member 120. The joint portions 111a and 111B may include a first joint portion 111A and a second joint portion 111B. The first joint portion 111A may be disposed on the upper surface 110A and the lower surface 110B of the frame 110, and the second joint portion 111B may be disposed on the first joint portion 111A and extend to the inner wall of the through hole 110X. Since the corresponding members included in the electronic component package 100C according to another example are the same as those described above, they will not be described again.

12A to 12E are schematic views illustrating an example of a process of manufacturing an electronic component package 100C according to another example. In the description of the example of the process of manufacturing the electronic component package 100C, the content overlapping with the above content will not be explained, and the content different from the above will be mainly explained.

Referring to FIG. 12A, a frame 110 may be prepared, and a first joint portion 111A is formed on the upper surface 110A and the lower surface 110B of the frame 110. Here, A of FIG. 12A is a plan view of the frame 110 in which the first joint portion 111A is formed, and B of FIG. 12A illustrates a cross section of the portion of A of FIG. 12A that can be used as a unit package. A first joint portion 111A may be formed over the entire upper surface 110A of the frame 110 and the entire lower surface 110B. Similarly, the frame 110 can be manufactured and used in a variety of sizes to facilitate mass production.

Referring to FIG. 12B, a through hole 110X penetrating through the first joint portion 111A and the frame 110 may be formed. Here, A of FIG. 12B is a plan view of the frame 110 in which the through hole 110X is formed, and B of FIG. 12B illustrates a cross section of the partial area which can be used as a unit package in A of FIG. 12B. Similarly, the through hole 110X can be formed by, for example, mechanical drilling and/or laser drilling, a sandblasting method using abrasive particles, a dry etching method using a plasma, a wet etching method using an etchant, or the like. The size, shape, and the like of the through hole 110X can be designed according to the size, shape, number, and the like of the electronic component 120 to be mounted.

Referring to FIG. 12C, a second joint portion 111B may be formed on the first joint portion 111A and the inner wall of the through hole 110X. As a result, two joint portions 111A and 111B can be formed on the upper surface 110A and the lower surface 110B of the frame 110, and a single joint portion 111B can be disposed on the inner wall of the through hole 110X. Here, A of FIG. 12C is a plan view of the frame 110 in which the second bonding portion 111B is formed, and B of FIG. 12C illustrates a cross section of the partial region which can be used as a unit package in A of FIG. 12C. Therefore, the thickness of the first joint portion 111A and the second joint portion 111B formed on the upper surface 110A or the lower surface 110B of the frame 110 may be greater than the thickness of the second joint portion 111B formed on the inner wall of the through hole 110X of the frame 110. thickness. The second bonding portion 111B may be formed by a conventional method such as electrolytic copper plating or electroless copper plating.

Referring to FIG. 12D, the electronic component 120 may be disposed in the through hole 110X. Next, the electronic component 120 can be encapsulated using the insulating portion 150. The insulating portion 150 may cover at least an upper portion of the frame 110 and at least an upper portion of the electronic member 120, and may be disposed in a space within the through hole 110X. The insulating portion 150 can be formed by, for example, laminating a precursor of the insulating portion 150 and then hardening the precursor. Alternatively, the insulating portion 150 may be formed by applying a material of the insulating portion 150 and then hardening the material to be encapsulated in a state in which a lower portion of the through hole is closed by a tape (not shown) or the like. Electronic component 120.

Referring to FIG. 12E, redistribution portions 130 and 140 may be formed under the frame 110 and the electronic member 120. In detail, the insulating layer 131 may be formed under the frame 110 and the electronic member 120. Next, a conductive pattern 132 and a conductive via 133 may be formed to form the redistribution portion 130. Next, an insulating layer 141 may be formed under the insulating layer 131. Next, a conductive pattern 142 and a conductive via 143 may be formed to form the redistribution portion 140. After the redistribution portions 130 and 140 are formed, the outer layer 160 may be formed below the redistribution portions 130 and 140. Next, a first opening portion 161 may be formed in the outer layer 160 to expose at least a portion of the conductive pattern 142. After the first opening portion 161 is formed in the outer layer 160, the first external connection terminal 165 disposed in the first opening portion 161 may be formed. In some cases, only the first opening portion 161 may be formed, and if necessary, the first external connection terminal 165 may be formed by a separate process by a customer who purchases the electronic component package 100C.

FIG. 13 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 14 is a schematic plan view of the electronic component package taken along line IV-IV' shown in Figure 13 . Referring to FIGS. 13 and 14, an electronic component package 100D according to another example may include a frame 110 having a through hole 110X, an electronic member 120 disposed in the through hole 110X, at least an upper portion covering the frame 110, and an upper portion of the electronic member 120. a portion of the insulating portion 150, a joint portion 111 at least partially disposed between the frame 110 and the insulating portion 150, a through wiring 113 penetrating through the frame 110, and redistribution portions 130 and 140 disposed under the frame 110 and the electronic member 120 . An insulating material may be disposed between the frame 110 and/or the joint portion 111 and the through wiring 113.

The through wiring 113 penetrating through the upper surface 110A and the lower surface 110B of the frame 110 may be used to electrically connect the conductive patterns disposed in different layers to each other, and for example, copper (Cu), aluminum (Al), silver (Ag) A conductive material such as tin (Sn), gold (Au), nickel (Ni), lead (Pb), or an alloy thereof may be used as the material penetrating the wiring 113. The number, the spacing, the arrangement form, and the like of the through wirings 113 are not particularly limited, and can be sufficiently modified by those skilled in the art in accordance with specific details of the design. The insulating material is disposed between the through wiring 113 and the frame 110 and/or the joint portion 111 in order to electrically insulate the through wiring 113 from the frame 110 and/or the joint portion 111. Here, the insulating material may be the same material as the insulating portion 150 as shown in FIGS. 13 and 14, or may be an insulating material different from the insulating portion 150.

The electronic component package 100D according to another example may further include an outer conductive pattern 152 disposed on the insulating portion 150. The outer conductive pattern 152 disposed on the insulating portion 150 may also serve as a redistribution pattern and/or a pad pattern, and for example, copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au) A conductive material such as nickel (Ni), lead (Pb), or an alloy thereof may be used as the material of the outer conductive pattern 152. Detailed examples have been set forth above. The outer conductive pattern 152 can perform various functions depending on the design of the corresponding layer. For example, the outer conductive pattern 152 can function as a ground (GND) pattern, a power (PWR) pattern, a signal (S) pattern, or the like as a redistribution pattern. Here, the signal (S) pattern may include various signals other than a ground (GND) pattern, a power (PWR) pattern, and the like, such as a data signal. Further, the outer conductive pattern 152 may function as a via pad, an external connection terminal pad, or the like as a pad pattern. Since the outer conductive pattern 152 may be disposed over the entire surface of the insulating portion 150 and the second external connection terminal 175 may also be disposed over the entire surface of the cover layer 170 to be explained below, various designs may exist. The thickness of the outer conductive pattern 152 is also not particularly limited, and may be, for example, about 10 μm to 50 μm. If desired, a surface treatment layer can be formed on the exposed portion of the outer conductive pattern 152. The surface treatment layer can be formed by, for example, electrolytic gold plating, electroless gold plating, OSP or electroless tin plating, electroless silver plating, electroless nickel plating/displacement gold plating, DIG plating, HASL, or the like.

The electronic component package 100D according to another example may further include a cover layer 170 disposed over the insulating portion 150. The purpose of using the cover layer 170 may be to protect the insulating portion 150, the outer conductive pattern 152, and the like from external physical or chemical damage or the like. The cover layer 170 may have a second opening portion 171 that exposes at least a portion of the outer conductive pattern 152 disposed on the insulating portion 150. Although the second opening portion 171 may expose a portion of the upper surface of the outer conductive pattern 152, the second opening portion 171 may also expose a side surface of the outer conductive pattern 152 in some cases. The material of the cover layer 170 is not particularly limited. For example, a solder resist can be used as the material of the cap layer 170. Further, various PID resins can be used as the material of the cover layer 170. If desired, the cover layer 170 can also be formed from multiple layers.

The electronic component package 100D according to another example may further include a second external connection terminal 175 disposed in the second opening portion 171 of the cover layer 170. The second external connection terminal 175 may be disposed in the second opening portion 171 and may be connected to the outer conductive pattern 152 exposed through the second opening portion 171. The second external connection terminal 175 may be formed of a conductive material such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), solder, or the like. However, it is not particularly limited to this. The second external connection terminal 175 may be a pad, a ball, a pin, or the like. The second external connection terminal 175 may be formed of a plurality of layers or a single layer. In the case where the second external connection terminal 175 is formed of a plurality of layers, the second external connection terminal 175 may contain a copper post and solder, and in the case where the second external connection terminal 175 is formed of a single layer, the second external The connection terminal 175 may contain tin-silver solder or copper. However, this is merely an example, and the second external connection terminal 175 is not limited thereto. Since the other corresponding members included in the electronic component package 100D according to another example are the same as those described above, they will not be explained.

15A to 15F are schematic views illustrating an example of a process of manufacturing an electronic component package 100D according to an example. In the description of the example of the process of manufacturing the electronic component package 100D, the content overlapping with the above content will not be explained, and the content different from the above will be mainly explained.

Referring to Figure 15A, a frame 110 can be prepared. Here, A of FIG. 15A is a plan view of the frame 110, and B of FIG. 15A illustrates a cross section of a portion of the A of FIG. 15A that can be used as a unit package. Similarly, the frame 110 can be manufactured and used in a variety of sizes to facilitate mass production. Additionally, there may be fiducial marks in the frame 110 for achieving superior pick-and-place (P&P).

Referring to FIG. 15B, a through hole 110X and a through hole 110Y penetrating through the frame 110 may be formed. Here, A of FIG. 15B is a plan view of the frame 110 in which the through holes 110X and the through holes 110Y are formed, and B of FIG. 15B illustrates a cross section of the partial area which can be used as a unit package in A of FIG. 15B. The method of forming the through hole 110X and the through hole 110Y is not particularly limited, and may be, for example, mechanical drilling and/or laser drilling, sandblasting using abrasive particles, dry etching using plasma, or using an etchant. A wet etching method or the like is performed. The size, shape, and the like of the through hole 110X can be designed according to the size, shape, number, and the like of the electronic component 120 to be mounted. The size, shape, and the like of the through hole 110Y can be designed according to the size, shape, number, and the like of the target through wiring 113 to be formed.

Referring to Fig. 15C, a joint portion 111 may be formed on the upper surface 110A and the lower surface 110B of the frame 110 and on the inner wall of the through hole 110X and the inner wall of the through hole 110Y. Here, A of FIG. 15C is a plan view of the frame 110 in which the joint portion 111 is formed, and B of FIG. 15C illustrates a cross section of the portion of A of FIG. 15C which can be used as a unit package. Similarly, the joint portion 111 can be formed by a conventional method such as electrolytic copper plating or electroless copper plating.

Referring to FIG. 15D, the electronic component 120 may be disposed in the through hole 110X. Next, the electronic component 120 can be encapsulated using the insulating portion 150. The insulating portion 150 may cover at least an upper portion of the frame 110 and at least an upper portion of the electronic component 120, and may be disposed in a space in the through hole 110X and the through hole 110Y. The insulating portion 150 can be formed by a conventional method. For example, the insulating portion 150 can be formed by laminating a precursor of the insulating portion 150 and then hardening the precursor. Alternatively, the insulating portion 150 may be formed by applying a material of the insulating portion 150 and then hardening the material to be encapsulated in a state in which a lower portion of the through hole is closed by a tape (not shown) or the like. Electronic component 120.

Referring to FIG. 15E, a through wiring 113 may be formed in the through hole 110Y. In detail, a through hole (not shown) having a smaller diameter than the through hole 110Y is formed in the through hole 110Y and then the through hole (not shown) is filled with a conductive material. The through wiring 113 is formed. The through wiring 113 can be formed by a conventional method such as electrolytic copper plating or electroless copper plating. More specifically, the through wiring 113 may be formed using a method such as CVD, PVD, sputtering, subtractive process, additive process, SAP, MSAP, etc., but is not limited thereto.

Referring to FIG. 15F, redistribution portions 130 and 140 may be formed under the frame 110 and the electronic member 120. In detail, the insulating layer 131 may be formed under the frame 110 and the electronic member 120. Next, a conductive pattern 132 and a conductive via 133 may be formed to form the redistribution portion 130. Next, an insulating layer 141 may be formed under the insulating layer 131. Next, a conductive pattern 142 and a conductive via 143 may be formed to form the redistribution portion 140. After the redistribution portions 130 and 140 are formed, the outer layer 160 may be formed below the redistribution portions 130 and 140. Next, a first opening portion 161 may be formed in the outer layer 160 to expose at least a portion of the conductive pattern 142. After the first opening portion 161 is formed in the outer layer 160, the first external connection terminal 165 disposed in the first opening portion 161 may be formed. Further, an outer conductive pattern 152 may be formed on the insulating portion 150. Next, a cover layer 170 may be formed over the insulating portion 150. Next, a second opening portion 171 may be formed in the cover layer 170 to expose at least a portion of the conductive pattern 142. After the second opening portion 171 is formed in the cover layer 170, the second external connection terminal 175 disposed in the second opening portion 171 may be formed. The method of forming the outer conductive pattern 152, the cover layer 170, the second opening portion 171, and the second external connection terminal 175 is substantially the same as forming the conductive patterns 132 and 142, the outer layer 160, the first opening portion 161, and the first outer portion. The method of connecting the terminals 165 will therefore not be explained again. In some cases, only the second external connection terminal 175 disposed in the second opening portion 171 of the cover layer 170 may be formed, and only the first opening portion 161 may be formed in the outer layer 160, and if necessary, by The customer who purchases the electronic component package 100D performs a separate process to form the first external connection terminal 165 disposed in the first opening portion 161.

Meanwhile, unlike the above-described example, as described with reference to the method of manufacturing the electronic component package 100B according to another example, the frame 110 on which the bonding portion 111 is formed on the upper surface 110A and the lower surface 110B may be first prepared, and may be in the frame 110 The through hole 110X and the through hole 110Y are formed in the middle. In this case, the manufactured electronic component package may have a form in which the joint portion 111 is not disposed on the inner wall of the through hole 110X and the inner wall of the through hole 110Y.

Further, unlike the above-described example, as described with reference to the method of manufacturing the electronic component package 100C according to another example, the frame 110 on which the first bonding portion 111A is formed on the upper surface 110A and the lower surface 110B is first prepared, in the frame In the case where the through hole 110X and the through hole 110Y are formed in the 110 and the second bonding portion 111B is plated again, the manufactured electronic component package may have two bonding portions formed on the upper surface 110A and the lower surface 110B of the frame 110. 111A and 111B, and the inner wall of the through hole 110X and the inner wall of the through hole 110Y are formed in the form of a single joint portion 111B.

FIG. 16 is a diagram illustrating various cross sections of the through wiring 113 in the electronic component package 100D according to the example. In the case where a small through hole (not shown) is formed in the through hole 110Y using a CNC drilling, punching method or the like, the cross section of the through wiring 113 may have a vertical shape as shown in A; Where a single through-hole drilling, etching method, or the like is used to form a small through hole (not shown) in the through hole 110Y, it may have a bevel shape as shown in B; or a double side may be used therein. In the case where a laser through hole, an etching method, or the like is formed in a small through hole (not shown) in the through hole 110Y, it may have a double bevel shape as shown in C, but is not limited thereto.

Fig. 17 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 18 is a schematic plan view of the electronic component package taken along line V-V' shown in Figure 17 . Referring to FIGS. 17 and 18, an electronic component package 100E according to another example may include a frame 110 having a through hole 110X, an electronic member 120 disposed in the through hole 110X, at least an upper portion covering the frame 110, and an upper portion of the electronic member 120. A portion of the insulating portion 150, a joint portion 111 at least partially disposed between the frame 110 and the insulating portion 150, and redistribution portions 130 and 140 disposed under the frame 110 and the electronic member 120. The insulating portion 150 may close an outer portion of the frame 110. When the frame 110 is closed by the insulating portion 150 as described above, the frame 110 may not be exposed. Thus, improvement in reliability such as oxidation resistance can be promoted. Since the corresponding members included in the electronic component package 100E according to another example are the same as those described above, they will not be described again.

19A to 19D are schematic views illustrating an example of a process of manufacturing the electronic component package 100E. In the description of the example of the process of manufacturing the electronic component package 100E, the content overlapping with the above content will not be explained, and the content different from the above will be mainly explained.

Referring to Fig. 19A, a frame 110 having a joint portion 111 formed on an upper surface 110A and a lower surface 110B thereof may be prepared. Further, the adhesive polymer layer 190 may be attached to the joint portion 111 disposed on the lower surface 110B of the frame 110. A joint portion 111 may be formed over the entire upper surface 110A of the frame 110 and the entire lower surface 110B. Similarly, the frame 110 can be manufactured and used in a variety of sizes to facilitate mass production.

Referring to FIG. 19B, a through hole 110X and a dummy hole 110Z penetrating through the joint portion 111 and the frame 110 may be formed. The dummy hole 110Z can close the frame 110 having the through hole 110X. The method of forming the through hole 110X and the dummy hole 110Z is not particularly limited, and can be performed by, for example, mechanical drilling and/or laser drilling, sandblasting using abrasive particles, dry etching using plasma, or using an etchant. A wet etching method or the like is performed. The size, shape, and the like of the through hole 110X and the dummy hole 110Z can be designed according to the size, shape, number, and the like of the electronic component 120 to be mounted.

Referring to FIG. 19C, the electronic member 120 may be disposed in the through hole 110X. Next, the electronic component 120 can be encapsulated using the insulating portion 150. The adhesive polymer layer 190 can be stripped. The insulating portion 150 may cover at least an upper portion of the frame 110 and at least an upper portion of the electronic member 120, and may be disposed in a space within the through hole 110X. Further, the insulating portion 150 may close the outer portion of the frame 110 such that the frame 110 is not exposed. The insulating portion 150 can be formed by, for example, laminating a precursor of the insulating portion 150 and then hardening the precursor. Alternatively, the insulating portion 150 may be formed by applying a material for forming the insulating portion 150 and then hardening the material to encapsulate the electronic member 120.

Referring to FIG. 19D, redistribution portions 130 and 140 may be formed under the frame 110 and the electronic member 120. In detail, the insulating layer 131 may be formed under the frame 110 and the electronic member 120. Next, a conductive pattern 132 and a conductive via 133 may be formed to form the redistribution portion 130. Next, an insulating layer 141 may be formed under the insulating layer 131. Next, a conductive pattern 142 and a conductive via 143 may be formed to form the redistribution portion 140. After the redistribution portions 130 and 140 are formed, the outer layer 160 may be formed below the redistribution portions 130 and 140. Next, a first opening portion 161 may be formed in the outer layer 160 to expose at least a portion of the conductive pattern 142. After the first opening portion 161 is formed in the outer layer 160, the first external connection terminal 165 disposed in the first opening portion 161 may be formed. In some cases, only the first opening portion 161 may be formed, and if necessary, the first external connection terminal 165 may be formed by a separate process by a customer who purchases the electronic component package 100E.

Meanwhile, unlike the above-described example, as described with reference to the method of manufacturing the electronic component package 100A according to the example, the through hole 110X and the dummy hole 110Z, the plating joint portion 111, and the insulating portion 150 are first formed in the frame 110. In this case, the manufactured electronic device package may have a form in which the joint portion 111 extends to the inner wall of the through hole 110X and the inner wall of the dummy hole 110Z and is disposed on the inner wall of the through hole 110X and the inner wall of the dummy hole 110Z.

Further, unlike the above-described example, as described with reference to the method of manufacturing the electronic component package 100C according to another example, the frame 110 in which the first bonding portion 111A is formed on the upper surface 110A and the lower surface 110B is first formed through In the case of the hole 110X and the dummy hole 110Z, and the second joint portion 111B is plated again, the manufactured electronic component package may have two joint portions 111A and 111B formed on the upper surface 110A and the lower surface 110B of the frame 110. Further, a form of a single joint portion 111B is formed on the inner wall of the through hole 110X and the inner wall of the dummy hole 110Z.

FIG. 20 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 21 is a schematic plan view of an electronic component package taken along line VI-VI' shown in Figure 20 of the electronic component package. 20 and 21, the electronic component package 100F according to another example may include a frame 110 having a through hole 110X, electronic components 120 and 122 disposed in the through hole 110X, at least an upper portion covering the frame 110, and the electronic member 120. The insulating portion 150 of the upper portion of the portion 122, the joint portion 111 at least partially disposed between the frame 110 and the insulating portion 150, and the redistribution portions 130 and 140 disposed under the frame 110 and the electronic members 120 and 122, wherein the electrons The number of members 120 and 122 is plural.

The plurality of electronic components 120 and 122 may be identical to each other or different from each other. The plurality of electronic components 120 and 122 may have electrode pads 120P and 122P electrically connected to the redistribution portions 130 and 140, respectively. Electrode pads 120P and 122P can be redistributed by redistribution portions 130 and 140, respectively. The number, spacing, arrangement, and the like of the electronic components 120 and 122 are not particularly limited, and can be sufficiently modified by those skilled in the art in accordance with specific details of the design. For example, the number of electronic components 120 and 122 can be two as shown in FIGS. 20 and 21. However, the number of the electronic components 120 and 122 is not limited thereto, and may be two or more, for example, three, four, or the like. Since the corresponding members included in the electronic component package 100F according to another example are the same as those described above, they will not be explained. Further, since the method of manufacturing the electronic component package 100F according to another example is the same as the above-described method of manufacturing the electronic component packages 100A to 100E except for arranging the plurality of electronic components 120 and 122, it will not be explained. Meanwhile, unlike the one shown in FIGS. 20 and 21, the electronic component package 100F according to another example may be modified to apply the specific form of the above-described electronic component packages 100B to 100E thereto.

Fig. 22 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 23 is a schematic plan view of the electronic component package taken along line VII-VII' shown in Figure 22 . Referring to FIGS. 22 and 23, an electronic component package 100G according to another example may include a frame 110 having through holes 110X1 and 110X2, electronic components 120 and 122 disposed in the through holes 110X1 and 110X2, respectively, covering at least an upper portion of the frame 110. The portion and the insulating portion 150 of the upper portion of the electronic components 120 and 122, the joint portion 111 at least partially disposed between the frame 110 and the insulating portion 150, and the redistribution portion 130 disposed under the frame 110 and the electronic members 120 and 122 And 140, wherein the number of the through holes 110X1 and 110X2 is plural, and the electronic components 120 and 122 are respectively disposed in the through holes 110X1 and 110X2.

The areas, shapes, and the like of the plurality of through holes 110X1 and 110X2 may be identical to each other or different from each other, and the electronic members 120 and 122 respectively disposed in the through holes 110X1 and 110X2 may be identical to each other or different from each other. The number, spacing, arrangement, and the like of the through holes 110X1 and 110X2 and the electronic components 120 and 122 respectively disposed in the through holes 110X1 and 110X2 are not particularly limited, and can be sufficiently modified by those skilled in the art according to specific details of the design. . For example, the number of through holes 110X1 and 110X2 may be two as shown in FIGS. 22 and 23. However, the number of through holes 110X1 and 110X2 is not limited thereto, and may be two or more, for example, three, four, or the like. Further, the number of the electronic components 120 and 122 respectively disposed in the through holes 110X1 and 110X2 may be one as shown in FIGS. 22 and 23. However, the number of the electronic components 120 and 122 respectively disposed in the through holes 110X1 and 110X2 is not limited thereto, and may be one or more, for example, two, three, or the like. Since the corresponding members included in the electronic component package 100G according to another example are the same as those described above, they will not be explained. Further, since the plurality of electronic components 120 and 122 are respectively disposed in the plurality of through holes 110X1 and 110X2 except for forming the plurality of through holes 110X1 and 110X2, the electronic component package 100G according to another example is manufactured. The method is the same as the above-described method of manufacturing the electronic component packages 100A to 100E, and thus will not be described. Meanwhile, unlike the one shown in FIGS. 22 and 23, the electronic component package 100G according to another example may be modified to apply the specific form of the above-described electronic component packages 100B to 100F thereto.

Fig. 24 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 25 is a schematic plan view of the electronic component package taken along line VIII-VIII' shown in Figure 24 . Referring to FIGS. 24 and 25, the electronic component package 100H according to another example may include a frame 110 having a through hole 110X, electronic components 120 and 124 disposed in the through hole 110X, at least an upper portion covering the frame 110, and the electronic member 120. And an upper portion of the insulating portion 150 of the portion 124, at least partially disposed between the frame 110 and the insulating portion 150, and the redistribution portions 130 and 140 disposed under the frame 110 and the electronic components 120 and 124, wherein the electrons At least one of the members 120 and 124 is the integrated circuit 120, and the other of the electronic members 120 and 124 is the passive member 124.

The integrated circuit 120 represents a wafer in which hundreds to millions of or more components are integrated together, and may be, for example, an application processor chip such as a central processing unit (eg, a CPU), a graphics processor (eg, , GPU), digital signal processor, cryptographic processor, microprocessor, microcontroller, etc., but not limited to this. Passive member 124 can be, for example, an inductor, a capacitor, a resistor, etc., but is not limited thereto. The integrated circuit 120 can be electrically connected to the redistribution portions 130 and 140 via the electrode pads 120P. The passive member 124 can be electrically connected to the redistribution portions 130 and 140 and the like via an electrode pad (not shown) such as an external electrode. The number, spacing, arrangement, and the like of the integrated circuit 120 and the passive member 124 are not particularly limited, and can be sufficiently modified by those skilled in the art in accordance with specific details of the design. For example, the integrated circuit 120 and the passive member 124 may be disposed near the center of the through hole 110X and near the inner wall of the through hole 110X, respectively, but are not limited thereto. Further, the number of integrated circuits 120 may be one and the number of passive members 124 may be plural. However, the number of integrated circuits 120 and passive members 124 is not limited thereto. For example, the number of integrated circuits 120 may be plural and the number of passive members 124 may be one, and the number of integrated circuits 120 and passive members 124 may be one, or integrated circuit 120 and passive member 124 The number of both can be plural. Since the corresponding members included in the electronic component package 100H according to another example are the same as those described above, they will not be described again. Further, since the method of manufacturing the electronic component package 100H according to another example is the same as the above-described method of manufacturing the electronic component packages 100A to 100E except for arranging the plurality of electronic components 120 and 124, it will not be explained. Meanwhile, unlike the one shown in FIGS. 24 and 25, the electronic component package 100H according to another example may be modified to apply the specific form of the above-described electronic component packages 100B to 100G thereto.

Fig. 26 is a cross-sectional view schematically illustrating another example of the electronic component package. Referring to FIG. 26, an electronic component package 100I according to another example may include a frame 110 having a through hole 110X, an electronic member 120 disposed in the through hole 110X, an insulation covering at least an upper portion of the frame 110, and an upper portion of the electronic member 120. The portion 150 is at least partially disposed at a joint portion 111 between the frame 110 and the insulating portion 150, and the redistribution portions 130 and 140 disposed under the frame 110 and the electronic member 120. The frame 110 may include a heat dissipation layer 116 disposed therein, and the metal-based or ceramic-based material used to form the frame 110 may be divided into a plurality of layers 115A and 115B by the heat dissipation layer 116.

The heat dissipation layer 116 may be formed of a conductive material such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), or an alloy thereof. The heat dissipation layer 116 may have a greater thermal conductivity than the metal-based or ceramic-based material used to form the remainder of the frame 110. Thus, in the case where the frame 110 includes the heat dissipation layer 116, the heat dissipation characteristics can be further improved. Since the corresponding members included in the electronic component package 100I according to another example are the same as those described above, they will not be explained. Further, since the method of manufacturing the electronic component package 100I according to another example is the same as the above-described method of manufacturing the electronic component packages 100A to 100E except that the heat dissipation layer 116 is disposed in the frame 110, it will not be explained. Meanwhile, unlike the one shown in FIG. 26, the electronic component package 100I according to another example may be modified to apply the specific form of the above-described electronic component packages 100B to 100H thereto.

Fig. 27 is a cross-sectional view schematically illustrating another example of the electronic component package. Referring to FIG. 27, an electronic component package 100J according to another example may include a frame 110 having a through hole 110X, an electronic member 120 disposed in the through hole 110X, an insulation covering at least an upper portion of the frame 110, and an upper portion of the electronic member 120. The portion 150 is at least partially disposed at a joint portion 111 between the frame 110 and the insulating portion 150, and the redistribution portions 130 and 140 disposed under the frame 110 and the electronic member 120. The frame 110 may include a plurality of heat dissipation layers 116A and 116B disposed therein, and a metal-based material or a ceramic-based material for forming the frame 110 may be divided into a plurality of layers 115A, 115B by the plurality of heat dissipation layers 116A and 116B and 115C.

The respective heat dissipation layers 116A and 116B may be made of a conductive material such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), or an alloy thereof. form. The heat dissipation layers 116A and 116B may have a greater thermal conductivity than the metal-based or ceramic-based materials used to form the remainder of the frame 110. Thus, in the case where the frame 110 includes the heat dissipation layers 116A and 116B, the heat dissipation characteristics can be further improved. The number of heat dissipation layers 116A and 116B may be more than the number of heat dissipation layers shown in FIG. Since the corresponding members included in the electronic component package 100J according to another example are the same as those described above, they will not be explained. Further, since the method of manufacturing the electronic component package 100J according to another example is the same as the above-described method of manufacturing the electronic component packages 100A to 100E except that the plurality of heat dissipation layers 116A and 116B are disposed in the frame 110, it will no longer be It is elaborated. Meanwhile, unlike the one shown in FIG. 27, the electronic component package 100J according to another example may be modified to apply the specific form of the above-described electronic component packages 100B to 100H thereto.

Stacked package structure

28 is a cross-sectional view schematically illustrating an example of a stacked package structure. The electronic component packages 100A to 100H according to the various examples described above can be applied to the stacked package structure in various forms. For example, referring to FIG. 28, a stacked package structure according to an example may have a form in which another electronic component package 200 is disposed over the above-described electronic component package 100D.

Referring to FIG. 28, as described above, the first electronic component package 100D may include a frame 110 having a through hole 110X, an electronic member 120 disposed in the through hole 110X, at least an upper portion covering the frame 110, and an upper portion of the electronic member 120. The insulating portion 150, the joint portion 111 disposed at least partially between the frame 110 and the insulating portion 150, the through wiring 113 penetrating through the frame 110, the redistribution portions 130 and 140 disposed under the frame 110 and the electronic member 120, are disposed on A first external connection terminal 165 below the redistribution portions 130 and 140, and a second external connection terminal 175 disposed above the insulating portion 150. Since the corresponding components are identical to the above components, they will not be explained.

The second electronic component package 200 may be disposed over the first electronic component package 100D and may be connected to the first electronic component package 100D via the second external connection terminal 175. The second electronic component package 200 may be a conventional electronic component package, and the structure or form of the second electronic component package 200 is not particularly limited. As an example, the second electronic component package 200 may be a memory chip in which a memory chip such as a volatile memory (eg, DRAM), a non-volatile memory (eg, a ROM), a flash memory, or the like is mounted in a flip chip form. Package, but not limited to this.

29 is a cross-sectional view schematically illustrating another example of a stacked package structure. For example, referring to FIG. 29, a stacked package structure according to another example may have a form in which other electronic component packages 200 and 300 are disposed above and below the above-described electronic component package 100D, respectively.

Referring to FIG. 29, as described above, the first electronic component package 100D may include a frame 110 having a through hole 110X, an electronic member 120 disposed in the through hole 110X, at least an upper portion covering the frame 110, and an upper portion of the electronic member 120. The insulating portion 150, the joint portion 111 disposed at least partially between the frame 110 and the insulating portion 150, the through wiring 113 penetrating through the frame 110, the redistribution portions 130 and 140 disposed under the frame 110 and the electronic member 120, are disposed on A first external connection terminal 165 below the redistribution portions 130 and 140, and a second external connection terminal 175 disposed above the insulating portion 150. Since the corresponding components are identical to the above components, they will not be explained.

As described above, the second electronic component package 200 may be disposed over the first electronic component package 100D and may be connected to the first electronic component package 100D via the second external connection terminal 175. The second electronic component package 200 may be a conventional electronic component package, and the structure or form of the second electronic component package 200 is not particularly limited. As an example, the second electronic component package 200 may be a memory chip package in which a memory chip such as a volatile memory (eg, DRAM), a non-volatile memory (eg, ROM), a flash memory, or the like is mounted, but is not Limited to this. Alternatively, the second electronic component package 200 may be any of the above-described electronic component packages 100A to 100H.

The third electronic component package 300 may be disposed under the first electronic component package 100D and may be connected to the first electronic component package 100D via the first external connection terminal 165. The third electronic component package 300 may also be a conventional electronic component package, and the structure or form of the third electronic component package 300 is not particularly limited. As an example, the third electronic component package 300 may also be a memory chip package in which a memory chip such as a volatile memory (eg, DRAM), a non-volatile memory (eg, ROM), a flash memory, or the like is mounted, but Not limited to this. Alternatively, the third electronic component package 300 may be any of the above-described electronic component packages 100A to 100H.

Although not shown in FIG. 29, various separate passive members (not shown) such as surface-mounting technology (SMT) members may be disposed on the surface of the first electronic component package 100D. Further, several types of electronic component packages 100A to 100H or several other types of electronic component packages (not shown in FIG. 29) may be disposed together with the passive members as an upper package. The passive member (not shown) may also be disposed in the second opening portion 171 and may be physically connected to and/or electrically connected to various conductive patterns exposed through the second opening portion 171.

As described above, according to an exemplary embodiment of the present invention, an electronic component package having improved heat dissipation characteristics and warpage characteristics, and a stacked package structure including the package can be provided.

Meanwhile, in the present invention, the term "lower portion" is used to indicate the mounting direction of the electronic component package in the electronic device, and the term "upper portion" is used to indicate the direction opposite to the direction indicated by the term "lower portion", and is used. The term "side portion" means a direction perpendicular to the direction indicated by the terms "upper portion and lower portion". Further, the phrase "at the upper portion, the lower portion, or the side portion" includes a case in which the target member is located in the corresponding direction but does not directly contact the reference member (ie, a case where the target member does not directly contact the reference member), and Where the target member is in direct contact with the reference member.

Meanwhile, in the present invention, the terms "first", "second", and the like are used to distinguish the respective members, and do not limit the order, importance, and the like of the corresponding members. In some cases, the first member may be referred to as a second member without departing from the scope of the invention, and the second member may also be similarly referred to as a first member.

In the meantime, the term "example" as used in the present invention is not intended to mean the same exemplary embodiment, but to emphasize and clarify different unique features. However, the examples presented above may also be combined with features of another example. For example, even if the specific details set forth in a particular example are not set forth in another example, it may be understood as being related to another example, unless otherwise stated.

Also, the terms used in the present invention are used for illustration only and are not intended to limit the invention. Here, the singular forms also include the plural unless the context dictates otherwise.

Although the exemplary embodiments have been shown and described, it will be apparent to those skilled in the art that modifications and variations can be made without departing from the scope of the invention as defined by the appended claims.

100‧‧‧Electronic component packaging
100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H, 100I, 100J‧‧‧ electronic component package
110‧‧‧Frame
110A‧‧‧Upper surface
110B‧‧‧ lower surface
110X, 110X1, 110X2, 110Y‧‧‧ through holes
110Z‧‧‧Dummy hole
111, 111A, 111B‧‧‧ joints
113‧‧‧through wiring
115A, 115B, 115C‧‧ layer
116, 116A, 116B‧‧‧ heat dissipation layer
120‧‧‧Electronic components
120P‧‧‧electrode pad
122‧‧‧Electronic components
122P‧‧‧electrode pad
124‧‧‧Electronic components
130‧‧‧Reassignment Department
131‧‧‧Insulation
132‧‧‧ Conductive pattern
133‧‧‧ Conductive pathway
140‧‧‧Reassignment Department
141‧‧‧Insulation
142‧‧‧Conductive pattern
143‧‧‧ Conductive pathway
150‧‧‧Insulation
152‧‧‧External conductive pattern
160‧‧‧ outer layer
161‧‧‧First opening
165‧‧‧First external connection terminal
170‧‧‧ Coverage
171‧‧‧ second opening
175‧‧‧Second external connection terminal
190‧‧‧Adhesive polymer layer
200‧‧‧Electronic component packaging
300‧‧‧Electronic component packaging
1000‧‧‧Electronic devices
1010‧‧‧ Motherboard
1020‧‧‧ wafer related components
1030‧‧‧Network related components
1040‧‧‧Other components
1050‧‧‧ camera
1060‧‧‧Antenna
1070‧‧‧ display
1080‧‧‧Battery
1090‧‧‧Signal line
1100‧‧‧Smart Phone
1101‧‧‧ Subject
1110‧‧‧ motherboard
1120‧‧‧Electronic components
1130‧‧‧ camera
Lines I-I', II-II', III-III', IV-IV', V-V', VI-VI', VII-VII', VIII-VIII'‧‧

The above and other aspects, features and advantages of the present invention will become more apparent from the written description of the appended claims. 2 is a diagram schematically illustrating an example of an electronic component package used in an electronic device. FIG. 3 is a cross-sectional view schematically illustrating an example of an electronic component package. Fig. 4 is a schematic plan view of the electronic component package taken along line I-I' shown in Fig. 3. 5A to 5E are schematic views illustrating an example of a process of manufacturing the electronic component package shown in Fig. 3. Figure 6 is a diagram illustrating several cross sections of the frame of the electronic component package shown in Figure 3. FIG. 7 is a cross-sectional view schematically illustrating another example of an electronic component package. Fig. 8 is a schematic plan view of the electronic component package taken along line II-II' shown in Fig. 7. 9A to 9D are schematic views illustrating an example of a process of manufacturing the electronic component package shown in Fig. 7. FIG. 10 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 11 is a schematic plan view of the electronic component package taken along line III-III' shown in Figure 10 . 12A to 12E are schematic views illustrating an example of a process of manufacturing the electronic component package shown in Fig. 10. FIG. 13 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 14 is a schematic plan view of the electronic component package taken along line IV-IV' shown in Figure 13 . 15A to 15F are schematic views illustrating an example of a process of manufacturing the electronic component package shown in Fig. 13. Fig. 16 is a view showing several cross sections of a through wiring of the electronic component package shown in Fig. 13. Fig. 17 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 18 is a schematic plan view of the electronic component package taken along line V-V' shown in Figure 17 . 19A to 19D are schematic views illustrating an example of a process of manufacturing the electronic component package shown in Fig. 17. FIG. 20 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 21 is a schematic plan view of the electronic component package taken along line VI-VI' shown in Figure 20 . Fig. 22 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 23 is a schematic plan view of the electronic component package taken along line VII-VII' shown in Figure 22 . Fig. 24 is a cross-sectional view schematically illustrating another example of the electronic component package. Figure 25 is a schematic plan view of the electronic component package taken along line VIII-VIII' shown in Figure 24 . Fig. 26 is a cross-sectional view schematically illustrating another example of the electronic component package. Fig. 27 is a cross-sectional view schematically illustrating another example of the electronic component package. 28 is a cross-sectional view schematically illustrating an example of a stacked package structure. 29 is a cross-sectional view schematically illustrating another example of a stacked package structure.

100A‧‧‧Electronic component package

110‧‧‧Frame

110A‧‧‧Upper surface

110B‧‧‧ lower surface

110X‧‧‧through hole

111‧‧‧Combination Department

120‧‧‧Electronic components

120P‧‧‧electrode pad

130‧‧‧Reassignment Department

131‧‧‧Insulation

132‧‧‧ Conductive pattern

133‧‧‧ Conductive pathway

140‧‧‧Reassignment Department

141‧‧‧Insulation

142‧‧‧Conductive pattern

143‧‧‧ Conductive pathway

150‧‧‧Insulation

160‧‧‧ outer layer

161‧‧‧First opening

165‧‧‧First external connection terminal

I-I’‧‧‧ line

Claims (25)

An electronic component package comprising: a frame containing a metal-based material or a ceramic-based material and having a through hole; an electronic component disposed in the through hole; and an insulating portion covering at least an upper portion of the frame and the electronic component An upper portion; a joint portion disposed at least partially between the frame and the insulating portion; and a redistribution portion disposed under the frame and the electronic member. The electronic component package according to claim 1, wherein the metal-based material is an Fe-Ni-based alloy (Hengfan Steel). The electronic component package according to claim 1, wherein the ceramic material is selected from the group consisting of a zirconia-based (ZrO ₂ ) material, an alumina-based (Al ₂ O ₃ ) material, and a lanthanum carbide (SiC) material. And at least one of the group consisting of lanthanum nitride (Si ₃ N ₄ ) materials. The electronic component package according to claim 1, wherein the metal-based material or the ceramic-based material has a thermal conductivity of 1 W/mK or more, and is 10 ppm/° C. or less than 10 ppm/ The coefficient of thermal expansion (CTE) of °C and the modulus of elasticity of 100 GPa or more. The electronic component package of claim 1, wherein the frame comprises any layer penetrated by the through hole in which the electronic component is disposed, and any layer of the frame has a 1 W/mK Or a thermal conductivity greater than 1 W/mK, a coefficient of thermal expansion (CTE) of 10 ppm/° C. or less than 10 ppm/° C. and an elastic modulus of 100 GPa or greater. The electronic component package of claim 1, wherein the bonding portion is disposed on at least one surface of the frame. The electronic component package of claim 6, wherein the joint extends to an inner wall of the through hole and is disposed on the inner wall of the through hole. The electronic component package of claim 1, wherein the joint portion includes a first joint portion and a second joint portion, the first joint portion being disposed on two surfaces of the frame opposite to each other, And the second joint portion is disposed on the first joint portion and extends to an inner wall of the through hole. The electronic component package of claim 8, wherein the first joint portion is not disposed on the inner wall of the through hole. The electronic component package of claim 1, wherein the bonding portion contains a conductive material. The electronic component package according to claim 10, wherein the joint portion has a larger thermal conductivity than the metal-based material or the ceramic-based material contained in the frame. The electronic component package of claim 1, further comprising a through wiring penetrating through the frame, wherein a space is disposed between the frame and the through wiring or between the bonding portion and the through wiring There is insulation material. The electronic component package of claim 1, wherein the insulating portion encloses an outer portion of the frame, and the frame is not exposed. The electronic component package of claim 1, wherein the frame comprises one or more heat dissipation layers disposed in the frame, and the metal-based material or the ceramic-based material is The plurality of heat dissipation layers are divided into a plurality of layers. The electronic component package of claim 14, wherein the one or more heat dissipation layers have a greater thermal conductivity than the remainder of the frame. The electronic component package of claim 1, further comprising: an outer layer disposed under the redistribution portion and having a first opening; and a first external connection terminal disposed in the first opening And wherein at least one of the first external connection terminals is disposed in the fan-out area. The electronic component package of claim 1, further comprising: a cover layer disposed above the insulating portion and having a second opening portion; and a second external connection terminal disposed in the second opening portion The second external connection terminal is electrically connected to the electronic component. A stacked package structure comprising: a first electronic component package comprising: a frame containing a metal-based material or a ceramic-based material and having a through hole; an electronic component disposed in the through hole; and an insulating portion covering at least the frame An upper portion and an upper portion of the electronic component; a joint portion at least partially disposed between the frame and the insulating portion; a through wire that penetrates the frame; a redistribution portion disposed in the frame and the portion Below the electronic component; a first external connection terminal disposed under the redistribution portion; and a second external connection terminal disposed over the insulating portion; and a second electronic component package disposed on the first electronic component The package is connected to the first electronic component package via the second external connection terminal. The stacked package structure of claim 18, further comprising a third electronic component package disposed under the first electronic component package and connected via the first external connection terminal To the first electronic component package. The stacked package structure of claim 18, wherein the frame comprises any layer penetrated by the through hole in which the electronic component is disposed, and any layer of the frame has a 1 W/mK Or a thermal conductivity greater than 1 W/mK, a coefficient of thermal expansion (CTE) of 10 ppm/° C. or less than 10 ppm/° C. and an elastic modulus of 100 GPa or greater. An electronic component package comprising: a frame having a through hole; a joint disposed on at least one surface of the frame; an electronic component disposed in the through hole of the frame; a redistribution portion, the frame and The electronic component is disposed on the redistribution portion, the redistribution portion is electrically connected to the electrode pad of the electronic component; and the insulating portion is filled at least by the redistribution portion, the electronic component, and a portion of the space of the through-hole defined by the frame, wherein the frame has a thermal conductivity of 1 W/mK or greater than 1 W/mK, a coefficient of thermal expansion (CTE) of 10 ppm/° C. or less than 10 ppm/° C., and It is a modulus of elasticity of 100 GPa or more. The electronic component package according to claim 21, wherein the material forming the frame is a metal-based material or a ceramic-based material. The electronic component package of claim 21, wherein the joint extends from the at least one surface of the frame to an inner wall of the through hole and is disposed on the inner wall of the through hole on. The electronic component package of claim 23, wherein a thickness of the joint on the inner wall is smaller than a thickness of the joint on the at least one surface of the frame. The electronic component package of claim 24, wherein the bonding portion is a conductive material.