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TW201437167A - Method for manufacturing glass substrate and glass substrate manufacturing apparatus - Google Patents

Method for manufacturing glass substrate and glass substrate manufacturing apparatus Download PDF

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Publication number
TW201437167A
TW201437167A TW103103817A TW103103817A TW201437167A TW 201437167 A TW201437167 A TW 201437167A TW 103103817 A TW103103817 A TW 103103817A TW 103103817 A TW103103817 A TW 103103817A TW 201437167 A TW201437167 A TW 201437167A
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Taiwan
Prior art keywords
electrode
temperature
glass substrate
platinum
clarification tank
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TW103103817A
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Chinese (zh)
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TWI568697B (en
Inventor
Ryo Suzuki
Tetsuo Kimijima
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Avanstrate Inc
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • C03B5/225Refining
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • C03B5/42Details of construction of furnace walls, e.g. to prevent corrosion; Use of materials for furnace walls
    • C03B5/43Use of materials for furnace walls, e.g. fire-bricks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Abstract

A method for manufacturing a glass substrate in which platinum contamination of a glass product can be reduced comprises a melting step, a refining step and a molding step. A refiner which is used in the refining step is composed of platinum or a platinum alloy and has a flange-shaped electrode for electrically heating the refiner. In the refining step, molten glass is de-foamed by being passed through the electrically heated refiner with the liquid level adjusted such that the refiner has a gas space, the electrode is cooled to suppress heating of the electrode, and the cooling of the electrode is controlled such that the temperature of the refiner wall exceeds the temperature at which platinum steam that is generated in the gas space in the refiner condenses.

Description

玻璃基板之製造方法及玻璃基板製造裝置 Glass substrate manufacturing method and glass substrate manufacturing device

本發明係關於一種熔融玻璃原料而製造玻璃基板的玻璃基板之製造方法及玻璃基板製造裝置。尤其是關於一種玻璃基板之製造方法中之澄清步驟。 The present invention relates to a method for producing a glass substrate for producing a glass substrate by melting a glass raw material, and a glass substrate manufacturing apparatus. More particularly, it relates to a clarification step in a method of manufacturing a glass substrate.

通常,玻璃基板係經過當由玻璃原料產生熔融玻璃後、使熔融玻璃成形為玻璃基板的步驟而製造。於上述步驟中,包含將熔融玻璃內所含之微小之氣泡去除的步驟(以下,亦稱為澄清)。澄清係藉由如下方式進行:一面加熱管狀之澄清槽之本體,一面使調配有澄清劑之熔融玻璃通過該澄清槽本體(以下,亦僅稱為本體),利用澄清劑之氧化還原反應而將熔融玻璃中之氣泡去除。更具體而言,於進一步提高經粗熔解之熔融玻璃之溫度而使澄清劑發揮功能從而使氣泡上浮脫泡,之後,降低溫度,藉此,未完全脫泡而殘留之相對較小的氣泡被熔融玻璃吸收。即,澄清包含使氣泡上浮脫泡之處理(以下,亦稱為脫泡處理或脫泡步驟)及使小泡吸收至熔融玻璃之處理(以下,亦稱為吸收處理或吸收步驟)。先前,澄清劑通常為As2O3,但近年來自環境負荷之觀點而言,使用SnO2等。 Usually, a glass substrate is manufactured by the process of shaping|molding a molten glass from a glass raw material, and shaping|molding a molten glass into a glass substrate. In the above step, a step of removing minute bubbles contained in the molten glass (hereinafter also referred to as clarification) is included. The clarification is carried out by heating the body of the tubular clarification tank while passing the molten glass prepared with the clarifying agent through the clarification tank body (hereinafter, also referred to simply as the main body), by the redox reaction of the clarifying agent. The bubbles in the molten glass are removed. More specifically, the clarifying agent functions to further increase the temperature of the coarsely melted molten glass to cause the bubbles to float and defoam, and thereafter, the temperature is lowered, whereby relatively small bubbles remaining without being completely defoamed are The molten glass is absorbed. That is, the clarification includes a treatment for defoaming the bubbles (hereinafter also referred to as a defoaming treatment or a defoaming step) and a treatment for absorbing the vesicles to the molten glass (hereinafter also referred to as an absorption treatment or absorption step). Previously, the clarifying agent was usually As 2 O 3 , but in recent years, SnO 2 or the like was used from the viewpoint of environmental load.

為了由高溫之熔融玻璃量產出品質較高之玻璃基板,較理想為考慮成為玻璃基板之缺陷之主要原因的雜質等未自製造玻璃基板之任一種裝置混入至熔融玻璃。因此,於玻璃基板之製造過程中與熔融玻璃接觸之構件之內壁必需根據與該構件接觸之熔融玻璃之溫度、所要 求之玻璃基板之品質等,而由適當之材料構成。例如,已知構成上述澄清槽本體之材料通常可使用鉑或鉑合金等鉑族金屬(專利文獻1)。鉑或鉑合金雖昂貴但熔點較高,對熔融玻璃之耐蝕性亦優異。 In order to produce a glass substrate having a high quality from a high-temperature molten glass, it is preferable that impurities such as impurities which are a cause of defects in the glass substrate are mixed into the molten glass without using any of the devices for manufacturing the glass substrate. Therefore, the inner wall of the member in contact with the molten glass during the manufacture of the glass substrate must be based on the temperature of the molten glass in contact with the member. The quality of the glass substrate is determined by a suitable material. For example, a platinum group metal such as platinum or a platinum alloy can be generally used as the material constituting the clarification tank body (Patent Document 1). Platinum or platinum alloys are expensive but have a high melting point and are excellent in corrosion resistance to molten glass.

於脫泡步驟時加熱澄清槽本體之溫度係根據應成形之玻璃基板之組成而不同,為1600~1700℃左右。 The temperature at which the body of the clarification tank is heated during the defoaming step varies depending on the composition of the glass substrate to be formed, and is about 1600 to 1700 °C.

作為加熱澄清槽本體之技術,例如,已知藉由在澄清槽本體設置1對凸緣狀之電極,並對該電極偶施加電壓,而對澄清槽本體進行通電加熱的技術(專利文獻2)。又,於凸緣狀之電極設置有由銅或鎳構成之水冷管。 As a technique for heating the body of the clarification tank, for example, it is known that a pair of flange-shaped electrodes are provided in the clarification tank body, and a voltage is applied to the electrode couple to electrically heat the clarification tank body (Patent Document 2). . Further, a water-cooled tube made of copper or nickel is provided on the flange-shaped electrode.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特表2006-522001號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-522001

[專利文獻2]日本專利特表2011-513173號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2011-513173

近年來,玻璃基板中所含之鉑雜質成為問題。 In recent years, platinum impurities contained in a glass substrate have become a problem.

近年來,例如,液晶顯示器(LCD)、有機EL(Electroluminescence,電致發光)顯示器等平板顯示器中所使用之玻璃基板(FPD用玻璃基板)內所含之鉑雜質特別嚴格地受限制。又,不僅於用於平板顯示器時成為問題,其他用途中亦成為問題。 In recent years, for example, platinum impurities contained in a glass substrate (a glass substrate for FPD) used in a flat panel display such as a liquid crystal display (LCD) or an organic EL (Electroluminescence) display are particularly restricted. Moreover, it is not only a problem when used for a flat panel display, but also a problem in other applications.

然而,如上述專利文獻2中記載般,若以水冷管冷卻凸緣狀之電極,則於澄清槽之電極附近之位置,溫度局部降低。 However, as described in the above-mentioned Patent Document 2, when the flange-shaped electrode is cooled by the water-cooling tube, the temperature is locally lowered at the position near the electrode of the clarification tank.

另一方面,於澄清槽本體之內部表面由鉑或鉑合金(鉑族金屬)構成之情形時,與氣相空間(包含氧氣之氛圍)接觸之部分會揮發。已揮發之鉑或鉑合金於澄清槽之電極附近之溫度局部降低之位置凝結,成為凝結物並附著。該凝結物之一部分掉落並混入至脫泡步驟中之熔融 玻璃中,從而有作為鉑雜質而混入至玻璃基板之虞。 On the other hand, when the inner surface of the clarification tank body is made of platinum or a platinum alloy (platinum group metal), a portion in contact with the gas phase space (atmosphere containing oxygen) volatilizes. The volatilized platinum or platinum alloy condenses at a position where the temperature near the electrode of the clarification tank is locally lowered, and becomes a condensate and adheres. One of the condensate is partially dropped and mixed into the melting in the defoaming step In the glass, there is a possibility that it is mixed as a platinum impurity into the glass substrate.

鑒於以上之方面,本發明係欲提供一種可減少玻璃製品之鉑雜質的玻璃基板之製造方法及玻璃基板製造裝置者。 In view of the above, the present invention is to provide a method for producing a glass substrate and a glass substrate manufacturing apparatus which can reduce platinum impurities in a glass product.

本發明具有以下態樣。 The present invention has the following aspects.

[態樣1] [Scenario 1]

一種玻璃基板之製造方法,其特徵在於:其係包含熔解步驟、澄清步驟、及成形步驟者;且於上述澄清步驟中所使用之澄清槽係由鉑或鉑合金構成,且具有用以對上述澄清槽進行通電加熱之凸緣狀之電極,於上述澄清步驟中,在上述經通電加熱之澄清槽內,藉由以具有氣相空間之方式調整液位使上述熔融玻璃通過而進行脫泡,為了抑制上述電極之發熱而冷卻上述電極,且上述電極之冷卻係以上述澄清槽之壁之溫度成為超過上述澄清槽之氣相空間內產生之鉑蒸氣凝結之溫度之範圍的方式得以控制。 A method for producing a glass substrate, comprising: a melting step, a clarifying step, and a forming step; and the clarifying tank used in the clarifying step is composed of platinum or a platinum alloy, and has the same a flange-shaped electrode that is electrically heated by the clarification tank, and in the clarification step, defoaming is performed by passing the molten glass by adjusting the liquid level in a gas phase space in the clarification tank heated by the electric current. The electrode is cooled in order to suppress the heat generation of the electrode, and the cooling of the electrode is controlled such that the temperature of the wall of the clarification tank becomes a range exceeding the temperature of the condensation of platinum vapor generated in the gas phase space of the clarification tank.

[態樣2] [Surface 2]

如態樣1之玻璃基板之製造方法,其中,於上述澄清步驟中,對上述電極或上述電極附近之澄清槽之溫度進行測定,且基於上述測定出之溫度,調整上述電極之冷卻量。 A method of producing a glass substrate according to aspect 1, wherein in the clarifying step, the temperature of the electrode or the clarification tank in the vicinity of the electrode is measured, and the amount of cooling of the electrode is adjusted based on the measured temperature.

[態樣3] [Surface 3]

如態樣2之玻璃基板之製造方法,其中,於上述澄清步驟中,判定上述測定出之電極或電極附近之澄清槽之溫度是否在預先規定之溫度範圍內,於上述判定之結果為測定出之溫度處於上述預先規定之溫度範圍外時,調整上述冷卻量。 In the method of producing a glass substrate according to the aspect 2, in the clarifying step, it is determined whether the temperature of the clarified tank in the vicinity of the electrode or the electrode to be measured is within a predetermined temperature range, and the result of the determination is determined. When the temperature is outside the predetermined temperature range, the cooling amount is adjusted.

[態樣4] [Surface 4]

如態樣1至3中任一項之玻璃基板之製造方法,其中,於上述澄清步驟中,使用氧化錫作為澄清劑。 The method for producing a glass substrate according to any one of the aspects 1 to 3, wherein, in the clarifying step, tin oxide is used as a clarifying agent.

[態樣5] [Surface 5]

如態樣1至4中任一項之玻璃基板之製造方法,其中,上述電極具有用以使冷媒通過之冷卻管,且上述澄清步驟係藉由增減通過上述冷卻管之冷媒之量,而調整冷卻量。 The method for producing a glass substrate according to any one of the aspects 1 to 4, wherein the electrode has a cooling tube for passing the refrigerant, and the clarifying step is performed by increasing or decreasing the amount of the refrigerant passing through the cooling tube. Adjust the amount of cooling.

[態樣6] [Figure 6]

如態樣5之玻璃基板之製造方法,其中,上述冷媒為氣體。 A method of producing a glass substrate according to aspect 5, wherein the refrigerant is a gas.

[態樣7] [Stage 7]

一種玻璃基板製造裝置,其特徵在於:其係包含熔解槽、澄清槽、及成形裝置者;且上述澄清槽係由鉑或鉑合金構成,且具有用以對上述澄清槽進行通電加熱之凸緣狀之電極,上述電極係為抑制上述電極之發熱而得以冷卻,且上述電極之冷卻係以上述澄清槽之壁之溫度成為超過上述澄清槽之氣相空間內產生之鉑蒸氣凝結之溫度之範圍的方式得以控制。 A glass substrate manufacturing apparatus comprising: a melting tank, a clarification tank, and a forming apparatus; and the clarification tank is made of platinum or a platinum alloy, and has a flange for electrically heating the clarification tank In the electrode, the electrode is cooled by suppressing heat generation of the electrode, and the cooling of the electrode is such that the temperature of the wall of the clarification tank is higher than the temperature of the platinum vapor condensed in the gas phase space of the clarification tank. The way is controlled.

根據本發明之玻璃基板之製造方法及玻璃基板製造裝置,可減少玻璃製品之鉑雜質。 According to the method for producing a glass substrate and the glass substrate manufacturing apparatus of the present invention, platinum impurities of the glass product can be reduced.

40‧‧‧熔解裝置 40‧‧‧melting device

41‧‧‧澄清槽 41‧‧‧Clarification tank

42‧‧‧成形裝置 42‧‧‧Forming device

43a‧‧‧玻璃供給管 43a‧‧‧glass supply tube

43b‧‧‧玻璃供給管 43b‧‧‧glass supply tube

43c‧‧‧玻璃供給管 43c‧‧‧glass supply tube

44‧‧‧片狀玻璃 44‧‧‧Flake glass

50a‧‧‧電極 50a‧‧‧electrode

50b‧‧‧電極 50b‧‧‧electrode

52‧‧‧電源裝置 52‧‧‧Power supply unit

54a‧‧‧冷媒供給裝置 54a‧‧‧Refrigerant supply device

54b‧‧‧冷媒供給裝置 54b‧‧‧Refrigerant supply device

56a‧‧‧溫度計測裝置 56a‧‧‧Thermometer

56b‧‧‧溫度計測裝置 56b‧‧‧Thermometer

58a‧‧‧控制裝置 58a‧‧‧Control device

58b‧‧‧控制裝置 58b‧‧‧Control device

100‧‧‧攪拌裝置 100‧‧‧Agitator

200‧‧‧玻璃基板製造裝置 200‧‧‧Glass substrate manufacturing equipment

502a‧‧‧冷卻管 502a‧‧‧Cooling tube

502b‧‧‧冷卻管 502b‧‧‧ Cooling tube

GP‧‧‧氣相空間 GP‧‧‧ gas phase space

MG‧‧‧熔融玻璃 MG‧‧‧ molten glass

圖1係用以說明本實施形態之玻璃基板之製造方法之簡單之步驟的流程圖。 Fig. 1 is a flow chart for explaining a simple procedure of a method of manufacturing a glass substrate of the embodiment.

圖2係本實施形態之玻璃基板製造裝置之概略性配置圖。 Fig. 2 is a schematic plan view showing a glass substrate manufacturing apparatus of the embodiment.

圖3係表示本實施形態之澄清槽之構成之概略圖。 Fig. 3 is a schematic view showing the configuration of a clarification tank of the embodiment.

圖4係表示於本實施形態之澄清步驟中,控制裝置調整電極之冷 卻之方法之一例的流程圖。 Figure 4 is a diagram showing the cooling of the electrode by the control device in the clarification step of the embodiment. A flow chart of one of the methods.

圖5係表示澄清槽之長度方向之溫度分佈之一例的圖。 Fig. 5 is a view showing an example of a temperature distribution in the longitudinal direction of the clarification tank.

圖6係表示電極之溫度與時間之關係之一例的圖。 Fig. 6 is a view showing an example of the relationship between the temperature of the electrode and time.

以下,一面參照圖式,一面對本發明之玻璃基板之製造方法之實施形態進行說明。 Hereinafter, an embodiment of a method for producing a glass substrate of the present invention will be described with reference to the drawings.

圖1係表示本實施形態之玻璃基板之製造方法之步驟的流程圖。如圖1所示,玻璃基板主要經過熔解步驟(ST1)、澄清步驟(ST2)、均質化步驟(ST3)、供給步驟(ST4)、成形步驟(ST5)、緩冷步驟(ST6)、切斷步驟(ST7)而製作。 Fig. 1 is a flow chart showing the procedure of a method for producing a glass substrate of the present embodiment. As shown in FIG. 1, the glass substrate mainly undergoes a melting step (ST1), a clarification step (ST2), a homogenization step (ST3), a supply step (ST4), a molding step (ST5), a slow cooling step (ST6), and a cutting. It is produced in step (ST7).

又,圖2係經過上述熔解步驟(ST1)~切斷步驟(ST7)而製作之本實施形態之玻璃基板製造裝置之概略圖,且概略性地表示在各步驟中使用之裝置之配置。 2 is a schematic view of the glass substrate manufacturing apparatus of the present embodiment which is produced through the melting step (ST1) to the cutting step (ST7), and schematically shows the arrangement of the apparatus used in each step.

如圖2所示,玻璃基板製造裝置200具備:熔解裝置40,其加熱玻璃原料並產生熔融玻璃;澄清槽41,其澄清熔融玻璃;攪拌裝置100,其用以攪拌熔融玻璃而進行均質化;及成形裝置42,其成形為玻璃基板。又,具有在上述裝置間移送熔融玻璃之玻璃供給管43a、43b、43c。連接熔解裝置40以後至成形裝置42為止之各裝置間之玻璃供給管43a、43b、43c、澄清槽41及攪拌裝置100係由鉑族金屬構成。 As shown in Fig. 2, the glass substrate manufacturing apparatus 200 includes a melting device 40 that heats the glass raw material to produce molten glass, a clarification tank 41 that clarifies the molten glass, and a stirring device 100 that agitates the molten glass to perform homogenization; And a forming device 42 formed into a glass substrate. Further, glass supply pipes 43a, 43b, and 43c for transferring molten glass between the above devices are provided. The glass supply pipes 43a, 43b, and 43c, the clarification tank 41, and the stirring device 100 between the respective devices connected to the melting device 40 and after the melting device 40 are made of a platinum group metal.

熔解裝置40係由耐火磚等耐火物構成。又,於熔解裝置40,設置有使未圖示之混合燃料與氧氣等而成之燃燒氣體燃燒並發出火焰之燃燒器等加熱機構。 The melting device 40 is made of a refractory such as refractory brick. Further, the melting device 40 is provided with a heating means such as a burner that burns a combustion gas such as a mixed fuel (not shown) and oxygen gas to emit a flame.

於熔解步驟(ST1)中,藉由利用上述加熱機構對添加有例如SnO2等澄清劑並供給至熔解裝置40內之玻璃原料進行加熱熔解而獲得熔融玻璃MG。具體而言,使用未圖示之原料投入裝置將玻璃原料供給至熔融玻璃之液面。玻璃原料係藉由來自燃燒器之火焰之輻射熱而受到 加熱。玻璃原料係藉由上述加熱機構進行加熱而逐漸地熔解,且熔於熔融玻璃MG中。 In the melting step (ST1), the glass raw material to which the clarifying agent such as SnO 2 is added and supplied to the melting device 40 is heated and melted by the heating means to obtain the molten glass MG. Specifically, the glass raw material is supplied to the liquid surface of the molten glass using a raw material input device (not shown). The glass raw material is heated by the radiant heat of the flame from the burner. The glass raw material is gradually melted by heating by the heating means described above, and is melted in the molten glass MG.

又,上述加熱機構亦可為例如由鉬、鉑或氧化錫等構成之至少1對電極。該情形時,熔融玻璃MG亦可藉由使上述電極間流動有電流而得以通電加熱,從而得以升溫。 Further, the heating means may be, for example, at least one pair of electrodes made of molybdenum, platinum, or tin oxide. In this case, the molten glass MG can be heated by electric current flowing between the electrodes to increase the temperature.

投入至熔解裝置40之玻璃原料可根據應製造之玻璃基板之組成而適當製備。若列舉製造用作TFT(Thin Film Transistor,薄膜電晶體)型LCD用基板之玻璃基板之情形作為一例,則將構成玻璃基板之玻璃組成物以質量%表示,較佳為含有SiO2:50~70%、Al2O3:0~25%、B2O3:1~15%、MgO:0~10%、CaO:0~20%、SrO:0~20%、BaO:0~10%、RO:5~30%(其中,R為Mg、Ca、Sr及Ba之合量)之無鹼玻璃。 The glass raw material to be supplied to the melting device 40 can be appropriately prepared depending on the composition of the glass substrate to be produced. As an example of the case of manufacturing a glass substrate used as a substrate for a TFT (Thin Film Transistor) type LCD, the glass composition constituting the glass substrate is represented by mass%, and preferably contains SiO 2 : 50~ 70%, Al 2 O 3 : 0 to 25%, B 2 O 3 : 1 to 15%, MgO: 0 to 10%, CaO: 0 to 20%, SrO: 0 to 20%, BaO: 0 to 10% , RO: 5 to 30% (wherein R is a combination of Mg, Ca, Sr, and Ba) of alkali-free glass.

再者,本實施形態中雖未無鹼玻璃,但玻璃基板亦可為包含微量鹼金屬之含微量鹼之玻璃。於含有鹼金屬之情形時,較佳為包含R'2O之合計為0.10%以上且0.5%以下、較佳為0.20%以上且0.5%以下(其中,R'係選自Li、Na及K中之至少1種,且含有玻璃基板)。當然,R'2O之合計亦可低於0.10%。 Further, in the present embodiment, although the alkali glass is not used, the glass substrate may be a glass containing a trace amount of alkali metal and containing a small amount of alkali. In the case of containing an alkali metal, the total content of R' 2 O is preferably 0.10% or more and 0.5% or less, preferably 0.20% or more and 0.5% or less (wherein R' is selected from the group consisting of Li, Na, and K. At least one of them, and contains a glass substrate). Of course, the total of R' 2 O can also be less than 0.10%.

又,於應用本發明之玻璃基板之製造方法之情形時,玻璃組成物除上述各成分以外,以質量%表示,亦含有SnO2:0.01~1%(較佳為0.01~0.5%)、Fe2O3:0~0.2%(較佳為0.01~0.08%),考慮到環境負荷,亦可以實質上不含有As2O3、Sb2O3及PbO之方式製備玻璃原 料。 Further, in the case of applying the method for producing a glass substrate of the present invention, the glass composition is represented by mass% in addition to the above components, and also contains SnO 2 : 0.01 to 1% (preferably 0.01 to 0.5%), Fe. 2 O 3 : 0 to 0.2% (preferably 0.01 to 0.08%), the glass raw material may be prepared in such a manner that substantially no As 2 O 3 , Sb 2 O 3 and PbO are contained in consideration of environmental load.

其次之澄清步驟(ST2)係於澄清槽41中進行。於澄清步驟中,以具有澄清槽41內之氣相空間之方式調整熔融玻璃MG之液位而使熔融玻璃MG通過。此時,藉由將澄清槽41內之熔融玻璃MG升溫至特定溫度(就上述組成之玻璃而言,例如為1600℃以上),使得熔融玻璃MG中所含之包含O2、CO2或SO2之氣泡吸收由例如SnO2等澄清劑之還原反應所產生之O2而成長,浮出熔融玻璃MG之液面並釋出。其後,藉由在玻璃供給管43b等中使熔融玻璃MG之溫度降低,使由SnO2等澄清劑進行還原反應所獲得之SnO進行氧化反應,藉此,使殘留於熔融玻璃MG之氣泡中之O2等氣體成分吸收至熔融玻璃MG中,氣泡消失。澄清劑之氧化反應及還原反應係藉由控制熔融玻璃MG之溫度而進行。 The second clarification step (ST2) is carried out in the clarification tank 41. In the clarification step, the liquid level of the molten glass MG is adjusted so as to have a vapor phase space in the clarification tank 41, and the molten glass MG is passed. At this time, by heating the molten glass MG in the clarification tank 41 to a specific temperature (for example, the glass of the above composition, for example, 1600 ° C or higher), the molten glass MG contains O 2 , CO 2 or SO. 2 is absorbed by the bubble, for example, SnO 2 O and the like arising from reduction of a refining agent 2 and growth, the surface of molten glass floats and release the MG. Then, by lowering the temperature of the molten glass MG in the glass supply tube 43b or the like, the SnO obtained by the reduction reaction of a clarifying agent such as SnO 2 is oxidized, thereby remaining in the bubbles of the molten glass MG. The gas component such as O 2 is absorbed into the molten glass MG, and the bubbles disappear. The oxidation reaction and the reduction reaction of the clarifying agent are carried out by controlling the temperature of the molten glass MG.

於均質化步驟(ST3)中,藉由使用下述攪拌機對通過玻璃供給管43b而供給之攪拌裝置100內的熔融玻璃MG進行攪拌,進行玻璃成分之均質化。攪拌裝置100係使用1個攪拌機攪拌熔融玻璃MG,但亦可使用2個以上之攪拌機攪拌熔融玻璃MG。 In the homogenization step (ST3), the molten glass MG in the stirring device 100 supplied through the glass supply tube 43b is stirred by using the following agitator to homogenize the glass component. In the stirring device 100, the molten glass MG is stirred by one agitator, but the molten glass MG may be stirred by using two or more mixers.

於供給步驟(ST4)中,通過玻璃供給管43c將熔融玻璃MG供給至成形裝置42。熔融玻璃係冷卻為於自澄清槽41向成形裝置輸送時之玻璃供給管43c中成為適於成形之溫度(就上述組成之玻璃而言,例如為1200℃左右)。 In the supply step (ST4), the molten glass MG is supplied to the molding device 42 through the glass supply tube 43c. The molten glass system is cooled to a temperature suitable for molding in the glass supply tube 43c when it is conveyed from the clarification tank 41 to the molding apparatus (for example, the glass having the above composition is, for example, about 1200 ° C).

於成形裝置42中,進行成形步驟(ST5)及緩冷步驟(ST6)。 In the molding device 42, a molding step (ST5) and a slow cooling step (ST6) are performed.

於成形步驟(ST5)中,使熔融玻璃MG成形為片狀玻璃44,形成片狀玻璃44之流動。於緩冷步驟(ST6)中,以所成形並流動之片狀玻璃44成為所需之厚度且不產生內部應變之方式加以冷卻。 In the molding step (ST5), the molten glass MG is formed into a sheet glass 44 to form a flow of the sheet glass 44. In the slow cooling step (ST6), the sheet glass 44 which is formed and flows is cooled to a desired thickness without generating internal strain.

於切斷步驟(ST7)中,藉由在未圖示之切斷裝置中,將自成形裝置42供給之片狀玻璃44切斷成特定之長度,而獲得板狀之玻璃基板。 經切斷之玻璃基板進一步被切斷成特定之尺寸,製作出目標尺寸之玻璃基板。其後,進行玻璃基板之端面之研削、研磨及玻璃基板之洗淨,進而檢查氣泡或瑕疵、污跡等缺點之有無,之後,將檢查合格品之玻璃基板作為最終製品而進行捆包。 In the cutting step (ST7), the sheet glass 44 supplied from the molding apparatus 42 is cut into a specific length by a cutting device (not shown) to obtain a plate-shaped glass substrate. The cut glass substrate is further cut into a specific size to produce a glass substrate of a target size. Thereafter, the end surface of the glass substrate is ground, polished, and washed with a glass substrate, and the presence or absence of defects such as bubbles, flaws, and stains is examined. Thereafter, the glass substrate of the inspected product is packaged as a final product.

[澄清槽41之構成] [Configuration of Clarification Slot 41]

其次,使用圖3,對澄清槽41之構成進行說明。圖3係表示實施形態之澄清槽41之構成之概略圖。於澄清槽41中,以澄清槽41之壁之溫度成為超過澄清槽41之氣相空間內產生之鉑蒸氣凝結之溫度之範圍的方式加以控制。 Next, the configuration of the clarification tank 41 will be described with reference to Fig. 3 . Fig. 3 is a schematic view showing the configuration of the clarification tank 41 of the embodiment. In the clarification tank 41, the temperature of the wall of the clarification tank 41 is controlled so as to exceed the range of the temperature at which the platinum vapor is condensed in the gas phase space of the clarification tank 41.

如圖3所示,澄清槽41具有筒狀之形狀,且由鉑或鉑合金構成。於澄清槽41之兩端之外周面,焊接有電極50a、50b。電極50a、50b係用以對澄清槽41進行通電加熱,且與電源裝置52連接。藉由對電極50a、50b之間施加電壓,而使電極50a、50b之間的澄清槽41中流動有電流,而對澄清槽41進行通電加熱。藉由該通電加熱,澄清槽41例如被加熱至1650℃~1700℃左右,自玻璃供給管43a供給之熔融玻璃MG被加熱至適於脫泡之溫度、例如1600℃~1700℃左右。 As shown in FIG. 3, the clarification tank 41 has a cylindrical shape and is made of platinum or a platinum alloy. Electrodes 50a and 50b are welded to the outer peripheral surface of both ends of the clarification tank 41. The electrodes 50a and 50b are for electrically heating the clarification tank 41 and are connected to the power supply device 52. By applying a voltage between the electrodes 50a and 50b, a current flows in the clarification tank 41 between the electrodes 50a and 50b, and the clarification tank 41 is electrically heated. By the electric heating, the clarification tank 41 is heated to, for example, about 1650 ° C to 1700 ° C, and the molten glass MG supplied from the glass supply pipe 43 a is heated to a temperature suitable for defoaming, for example, about 1600 ° C to 1700 ° C.

又,於電極50a、50b分別連接有冷媒供給裝置54a、54b、溫度計測裝置56a、56b、控制裝置58a、58b。於電極50a、50b之外周設置有冷卻管502a、502b。 Further, refrigerant supply devices 54a and 54b, temperature measuring devices 56a and 56b, and control devices 58a and 58b are connected to the electrodes 50a and 50b, respectively. Cooling tubes 502a and 502b are provided on the outer circumference of the electrodes 50a and 50b.

再者,電極50a具有與電極50b相同之構成,冷卻管502a具有與冷卻管502b相同之構成,冷媒供給裝置54a具有與冷媒供給裝置54b相同之構成,溫度計測裝置56a具有與溫度計測裝置56b相同之構成,控制裝置58a具有與控制裝置58b相同之構成,因此,以下將電極50a、50b統稱為電極50,將冷媒供給裝置54a、54b統稱為冷媒供給裝置54,將溫度計測裝置56a、56b統稱為溫度計測裝置56,將冷卻管502a、502b統稱為冷卻管502,將控制裝置58a、58b統稱為控制裝置58進行說 明。 Further, the electrode 50a has the same configuration as the electrode 50b, and the cooling pipe 502a has the same configuration as the cooling pipe 502b. The refrigerant supply device 54a has the same configuration as the refrigerant supply device 54b, and the temperature measuring device 56a has the same configuration as the temperature measuring device 56b. Since the control device 58a has the same configuration as the control device 58b, the electrodes 50a and 50b will be collectively referred to as an electrode 50, and the refrigerant supply devices 54a and 54b will be collectively referred to as a refrigerant supply device 54, and the temperature measuring devices 56a and 56b will be collectively referred to. For the thermometer measuring device 56, the cooling pipes 502a, 502b are collectively referred to as a cooling pipe 502, and the control devices 58a, 58b are collectively referred to as a control device 58. Bright.

電極50係由鉑或鉑合金構成。再者,於本實施例中,以電極50由鉑或鉑合金構成之情形作為具體例進行說明,但電極50之一部分亦可由鈀、銀、銅等其他金屬構成。例如,鉑或鉑合金昂貴,故而於電極50之溫度相對較低之場所,亦可使用鈀、銀、銅等。電極50係形成為板狀,且以彼此之電極50(50a、50b)變得大致平行之方式焊接於澄清槽41之兩端之外周面而設置。又,為了與電源裝置52連接,於電極50設置有一部分突出之突出部而形成凸緣狀。該突出部係自澄清槽41突出,故而藉由澄清槽41之外部氣體而得以冷卻。因此,電極50附近之澄清槽41得以冷卻。 The electrode 50 is made of platinum or a platinum alloy. Further, in the present embodiment, a case where the electrode 50 is made of platinum or a platinum alloy will be described as a specific example, but one portion of the electrode 50 may be made of other metals such as palladium, silver or copper. For example, platinum or a platinum alloy is expensive, so that palladium, silver, copper, or the like can be used in a place where the temperature of the electrode 50 is relatively low. The electrode 50 is formed in a plate shape, and is welded to the outer peripheral surfaces of both ends of the clarification tank 41 so that the electrodes 50 (50a, 50b) of each other are substantially parallel. Further, in order to connect to the power supply device 52, a part of the protruding portion is provided on the electrode 50 to form a flange shape. The protruding portion protrudes from the clarification tank 41, and thus is cooled by the outside air of the clarification tank 41. Therefore, the clarification tank 41 near the electrode 50 is cooled.

再者,電極50之形狀、設置位置、設置方法係只要能使自電源裝置52流出之電流流動於電極50、澄清槽41而加熱熔融玻璃MG,則可為任意。 In addition, the shape, installation position, and installation method of the electrode 50 may be any as long as the current flowing from the power supply device 52 can flow to the electrode 50 and the clarification tank 41 to heat the molten glass MG.

於電極50連接有溫度計測裝置56。例如,溫度計測裝置56係由熱電偶構成。溫度計測裝置56分別計測電極50之溫度,將所計測出之結果輸出至控制裝置58。溫度計測裝置56計測之溫度亦可計測電極50附近之澄清槽之(壁之)溫度而代替電極50之溫度,且用於下述電極50之冷卻之控制。所謂電極50附近係指距離電極50之位置50cm之範圍內。 A temperature measuring device 56 is connected to the electrode 50. For example, the thermometer measuring device 56 is composed of a thermocouple. The temperature measuring device 56 measures the temperature of the electrode 50, and outputs the measured result to the control device 58. The temperature measured by the thermometer measuring device 56 can also measure the temperature of the clarification tank (the wall) in the vicinity of the electrode 50 instead of the temperature of the electrode 50, and is used for the control of the cooling of the electrode 50 described below. The vicinity of the electrode 50 means a range of 50 cm from the position of the electrode 50.

又,為了抑制電極50之發熱,以與電極50之周圍接觸之方式設置有冷卻管502。即,電極50係藉由冷卻管502得以冷卻而抑制發熱。即,所謂電極50得以冷卻而抑制電極50之發熱,係指藉由電流發出之電極50之熱得以冷卻而抑制溫度。 Further, in order to suppress heat generation of the electrode 50, a cooling pipe 502 is provided in contact with the periphery of the electrode 50. That is, the electrode 50 is cooled by the cooling pipe 502 to suppress heat generation. That is, the electrode 50 is cooled to suppress the heat generation of the electrode 50, and the temperature of the electrode 50 emitted by the current is cooled to suppress the temperature.

冷卻管502係連接於冷媒供給裝置54。冷卻管502構成為管狀,且具有接收自冷媒供給裝置54供給之冷媒之流入口、及所供給之冷媒排出至冷媒供給裝置54之排出口。即,冷卻管502係以如下方式構 成:藉由使自冷媒供給裝置54供給之冷媒通過,而使以與冷卻管502接觸之方式設置之電極50冷卻。 The cooling pipe 502 is connected to the refrigerant supply device 54. The cooling pipe 502 is formed in a tubular shape, and has an inflow port that receives the refrigerant supplied from the refrigerant supply device 54 and a discharge port that discharges the supplied refrigerant to the refrigerant supply device 54. That is, the cooling pipe 502 is constructed as follows In order to pass the refrigerant supplied from the refrigerant supply device 54, the electrode 50 provided in contact with the cooling pipe 502 is cooled.

上述冷媒可為水等液體,或者亦可為空氣等氣體。 The refrigerant may be a liquid such as water or a gas such as air.

於本發明中,上述冷媒更佳為氣體。於冷媒為水等液體之情形時,冷卻能力較高,故而於澄清槽41之電極50之附近溫度局部降低。 In the present invention, the above refrigerant is more preferably a gas. When the refrigerant is a liquid such as water, the cooling ability is high, so that the temperature in the vicinity of the electrode 50 of the clarification tank 41 is locally lowered.

若於澄清槽中引起局部之溫度降低,則無法充分進行澄清,而有氣泡品質降低之虞。又,於由鉑或鉑合金構成之澄清槽中具有氣相空間,故而鉑或鉑合金會揮發。已揮發之鉑或鉑合金(稱為鉑揮發物)係於電極附近之溫度局部降低之位置凝結,成為凝結物而附著。凝結物之一部分掉落並混入至脫泡步驟中之熔融玻璃中,從而有招致玻璃基板之品質降低之虞。因此,於本實施形態中,上述冷媒較佳為氣體。 If a local temperature drop is caused in the clarification tank, clarification cannot be sufficiently performed, and the quality of the bubbles is lowered. Further, since the clarification tank made of platinum or a platinum alloy has a gas phase space, platinum or a platinum alloy volatilizes. The volatilized platinum or platinum alloy (referred to as platinum volatiles) condenses at a position where the temperature near the electrode is locally lowered, and becomes a condensate and adheres. One of the condensate is partially dropped and mixed into the molten glass in the defoaming step, thereby causing a decrease in the quality of the glass substrate. Therefore, in the present embodiment, the refrigerant is preferably a gas.

冷卻管502係由金屬構成。於自冷媒供給裝置54供給之冷媒為水等液體之情形時,冷卻能力較高,故而上述金屬亦可使用銅或鎳等,可耐使用。然而,於自冷媒供給裝置54供給之冷媒為氣體之情形時,與液體相比,冷卻能例較低,故而較佳為上述金屬使用在高溫之空氣中不會被氧化之材料。具體而言,較佳為鉑、銠、銀、鈀、金、或該等之合金。於該等材質中,銀之價格最便宜且電阻較小,故而能抑制發熱。因此,上述金屬較佳為包含銀,更佳為包含90質量%以上的銀。又,例如,於通入澄清槽之電流超過3000安時,冷卻管材料較理想為電阻率較小、作為電流之旁路發揮功能之材質,例如可使用銅、銀、鉑。又,於通入之電流小於3000安時,冷卻管材料之電阻發熱方面之問題較小,因此,亦可使用不鏽鋼或鎳、鈷等。即,冷卻管502亦可構成為包含銀、鉑、銅、銠、鈀、金、鐵、鈷、鎳中之任一者。再者,於冷卻管502使用熔點低於鉑之銀等材料之情形時,亦可以耐火磚等耐火物覆蓋冷卻管502之周圍,保護冷卻管502。 The cooling tube 502 is made of metal. When the refrigerant supplied from the refrigerant supply device 54 is a liquid such as water, the cooling ability is high. Therefore, the metal may be made of copper or nickel, and is resistant to use. However, when the refrigerant supplied from the refrigerant supply device 54 is a gas, the cooling energy is lower than that of the liquid. Therefore, it is preferable that the metal is a material which is not oxidized in high-temperature air. Specifically, platinum, rhodium, silver, palladium, gold, or the like is preferred. Among these materials, silver is the cheapest and has a low electrical resistance, so that heat generation can be suppressed. Therefore, the above metal preferably contains silver, and more preferably contains 90% by mass or more of silver. Further, for example, when the current flowing into the clarification tank exceeds 3000 ampere, the material of the cooling pipe is preferably a material having a small electrical resistivity and functioning as a bypass of the current, and for example, copper, silver or platinum can be used. Further, when the current to be passed is less than 3000 amps, the problem of resistance heating of the cooling tube material is small, and therefore stainless steel, nickel, cobalt or the like can also be used. That is, the cooling tube 502 may be configured to include any one of silver, platinum, copper, rhodium, palladium, gold, iron, cobalt, and nickel. Further, when the cooling pipe 502 is made of a material having a melting point lower than that of platinum or the like, the refractory such as refractory brick may cover the periphery of the cooling pipe 502 to protect the cooling pipe 502.

冷媒供給裝置54係連接於控制裝置58,並根據控制裝置58之控制,將冷媒供給至冷卻管502。冷媒可使用例如壓縮空氣等。 The refrigerant supply device 54 is connected to the control device 58 and supplies the refrigerant to the cooling pipe 502 under the control of the control device 58. As the refrigerant, for example, compressed air or the like can be used.

控制裝置58係由包含CPU(Central Processing Unit,中央處理單元)、記憶體等之電腦構成。 The control device 58 is composed of a computer including a CPU (Central Processing Unit), a memory, and the like.

如上所述,控制裝置58係接收溫度計測裝置56所計測出之溫度之結果,並基於該計測結果控制冷媒供給裝置54。藉此,調整電極50之冷卻量。例如,控制裝置58係於溫度計測裝置56所計測出之溫度之結果處於預先規定之溫度範圍外時,控制冷媒供給裝置54,調整冷卻量。例如使冷媒供給量僅增減預先規定之量。再者,於處於預先規定之溫度範圍內時,以冷媒供給裝置54供給之冷媒供給量不會變更之方式,控制冷媒供給裝置54。 As described above, the control device 58 receives the result of the temperature measured by the temperature measuring device 56, and controls the refrigerant supply device 54 based on the measurement result. Thereby, the amount of cooling of the electrode 50 is adjusted. For example, when the control device 58 is outside the predetermined temperature range as a result of the temperature measured by the temperature measuring device 56, the control device 58 controls the refrigerant supply device 54 to adjust the amount of cooling. For example, the supply amount of the refrigerant is increased or decreased only by a predetermined amount. In addition, when the temperature is within a predetermined temperature range, the refrigerant supply device 54 is controlled so that the amount of refrigerant supplied from the refrigerant supply device 54 is not changed.

具體而言,控制裝置58將包含上限值或下限值中之至少一者之溫度範圍預先記憶於記憶體。又,控制裝置58將預先規定之冷媒增加量及減少量預先記憶於記憶體。 Specifically, the control device 58 stores the temperature range including at least one of the upper limit value and the lower limit value in advance in the memory. Moreover, the control device 58 pre-stores the amount of refrigerant increase and the amount of reduction specified in advance in the memory.

控制裝置58係於溫度計測裝置56所計測出之溫度超過上限值時,參照記憶體,決定冷媒增加量。又,控制裝置58係控制冷媒供給裝置54,使冷媒供給量僅增加所決定之冷媒增加量。 When the temperature measured by the temperature measuring device 56 exceeds the upper limit value, the control device 58 refers to the memory to determine the amount of refrigerant increase. Moreover, the control device 58 controls the refrigerant supply device 54 to increase the refrigerant supply amount by only the determined refrigerant increase amount.

另一方面,於超過下限值時,參照記憶體,決定冷媒減少量。又,控制裝置58係控制冷媒供給裝置54,使冷媒供給量僅減少所決定之量。 On the other hand, when the value exceeds the lower limit, the amount of refrigerant reduction is determined by referring to the memory. Moreover, the control device 58 controls the refrigerant supply device 54 to reduce the amount of supply of the refrigerant by only the determined amount.

例如,上限值係電極50不會因發熱而發生斷裂等之溫度。此處,於電極50由鉑構成之情形時,鉑之熔點1768℃為上限值。如上所述,電極50亦可由鈀等構成,故而上限值為構成電極50之材料之熔點。又,下限值係澄清槽41之氣相空間內產生之鉑蒸氣不會凝結之溫度。澄清槽41之氣相空間內產生之鉑蒸氣不會凝結的溫度係熔融玻璃MG之溫度表現出澄清劑(例如,氧化錫)之澄清之溫度以上,故而上 述下限值必需為熔融玻璃MG之溫度表現出氧化錫之澄清之溫度。上述上限值具體而言為1720℃。又,上述下限值具體而言為1300℃、較佳為1400℃。 For example, the upper limit value of the electrode 50 does not cause a temperature such as breakage due to heat generation. Here, in the case where the electrode 50 is composed of platinum, the melting point of platinum of 1768 ° C is an upper limit. As described above, the electrode 50 may be made of palladium or the like, and therefore the upper limit is the melting point of the material constituting the electrode 50. Further, the lower limit value is a temperature at which platinum vapor generated in the gas phase space of the clarification tank 41 does not condense. The temperature at which the platinum vapor generated in the gas phase space of the clarification tank 41 does not condense is such that the temperature of the molten glass MG exhibits a clarification temperature of a clarifying agent (for example, tin oxide), and thus The lower limit value must be a temperature at which the temperature of the molten glass MG exhibits clarification of tin oxide. The above upper limit is specifically 1720 °C. Further, the lower limit is specifically 1300 ° C, preferably 1400 ° C.

本發明者預先經實驗之後發現,若以凸緣狀之電極50之溫度成為1300℃以上之方式進行控制,則於澄清槽中鉑未凝結(析出)。又,本發明者發現,為了進一步切實地使鉑未凝結(析出),以凸緣狀之電極50之溫度成為1400℃以上之方式進行控制即可。 The inventors of the present invention have found that platinum is not coagulated (precipitated) in the clarification tank when the temperature of the flange-shaped electrode 50 is controlled to 1300 ° C or higher. Moreover, the inventors of the present invention have found that in order to further reliably prevent the platinum from being condensed (precipitated), the temperature of the flange-shaped electrode 50 is controlled to be 1400 ° C or higher.

因此,於本實施形態中,上述下限值為1300℃、更佳為1400℃。 Therefore, in the present embodiment, the lower limit is 1300 ° C, more preferably 1400 ° C.

[電極50之冷卻調整方法] [Method of Cooling Adjustment of Electrode 50]

其次,使用圖4對電極50之冷卻調整方法進行詳細敍述。圖4係表示於本實施形態之澄清步驟ST2中,控制裝置58調整電極50之冷卻之方法之一例的流程圖。 Next, the cooling adjustment method of the electrode 50 will be described in detail using FIG. Fig. 4 is a flow chart showing an example of a method of adjusting the cooling of the electrode 50 by the control device 58 in the clarification step ST2 of the present embodiment.

如圖4所示,於步驟11(ST11)中,控制裝置58係於冷媒供給裝置54開始供給冷媒之狀態下,接收溫度計測裝置56所計測出之溫度(計測溫度)。電極50之溫度係於與冷卻管502接觸之位置溫度最低,朝向與澄清槽41接觸之位置而溫度逐漸地上升。於電極50中,在與澄清槽41接觸之位置溫度變得最高,但於澄清槽41中,在與電極50接觸之位置、即電極50之附近溫度變得最低。圖5係表示澄清槽41之長度方向(流動方向)之溫度分佈之一例的圖。若使電極50a、50b之間的由鉑構成之澄清槽41中流動有電流而對澄清槽41進行通電加熱,則通常澄清槽41之長度方向中央部之溫度T2成為最高溫度,長度方向兩端部之電極50a、50b附近之溫度T1成為最低溫度。由於電極50a、50b附近之氣相空間GP及熔融玻璃MG之溫度變得最低,故而於該電極50a、50b附近之氣相空間GP內,有鉑蒸氣凝結之可能性。因此,溫度計測裝置56在電極50a、50b附近計測到成為最低之該溫度T1。然後,控制裝置 58於下述步驟中判定溫度T1是否處於上限值至下限值之範圍內。如此,以澄清槽41之壁之溫度成為超過產生於氣相空間GP之鉑蒸氣凝結之溫度之範圍的方式,控制電極50a、50b之冷卻。 As shown in FIG. 4, in step 11 (ST11), the control device 58 receives the temperature (measured temperature) measured by the temperature measuring device 56 in a state where the refrigerant supply device 54 starts supplying the refrigerant. The temperature of the electrode 50 is the lowest at the position in contact with the cooling pipe 502, and the temperature gradually rises toward the position in contact with the clarification tank 41. In the electrode 50, the temperature at the position in contact with the clarification tank 41 becomes the highest, but in the clarification tank 41, the temperature at the position in contact with the electrode 50, that is, in the vicinity of the electrode 50 becomes the lowest. FIG. 5 is a view showing an example of a temperature distribution in the longitudinal direction (flow direction) of the clarification tank 41. When a current flows through the clarification tank 41 made of platinum between the electrodes 50a and 50b, and the clarification tank 41 is electrically heated, the temperature T2 of the center portion in the longitudinal direction of the clarification tank 41 is the highest temperature, and both ends in the longitudinal direction. The temperature T1 in the vicinity of the electrodes 50a and 50b of the portion becomes the lowest temperature. Since the temperature of the gas phase space GP and the molten glass MG in the vicinity of the electrodes 50a and 50b is the lowest, there is a possibility that the platinum vapor is condensed in the gas phase space GP near the electrodes 50a and 50b. Therefore, the temperature measuring device 56 measures the temperature T1 which is the lowest in the vicinity of the electrodes 50a and 50b. Then, the control device In the following step, it is determined whether or not the temperature T1 is within the range from the upper limit value to the lower limit value. In this manner, the cooling of the electrodes 50a and 50b is controlled so that the temperature of the wall of the clarification tank 41 exceeds the range of the temperature at which the platinum vapor generated in the gas phase space GP is condensed.

再者,控制裝置58中,當於對冷媒供給裝置54開始供給冷媒時,冷媒供給量可為任意之量。例如,控制裝置58亦可預先將初始冷媒供給量記憶於記憶體,以成為該初始冷媒供給量之方式控制冷媒供給裝置54。 Further, in the control device 58, when the supply of the refrigerant to the refrigerant supply device 54 is started, the amount of the refrigerant supply may be any amount. For example, the control device 58 may store the initial refrigerant supply amount in the memory in advance, and control the refrigerant supply device 54 so as to become the initial refrigerant supply amount.

於步驟12(ST12)中,控制裝置58判定自溫度計測裝置56輸入之計測溫度是否超過上限值。於自溫度計測裝置56輸入之計測溫度超過上限值時(ST12;是),控制裝置58進行ST13之處理,除此以外時(ST12;否)則進行ST21之處理。於計測溫度超過上限值之情形時(ST12;是),由於電極50及電極50之附近為異常被加熱之狀態,故而有電極50斷裂之虞。因此,控制裝置58於步驟13(ST13)中進行電極50之冷卻。另一方面,於計測溫度未超過上限值之情形時(ST12;否),溫度得到適當控制而無電極50斷裂之虞,故而於步驟21(ST21)中,判定計測溫度是否低於下限值。 In step 12 (ST12), the control unit 58 determines whether or not the measured temperature input from the temperature measuring device 56 exceeds the upper limit value. When the measured temperature input from the temperature measuring device 56 exceeds the upper limit value (ST12; YES), the control device 58 performs the processing of ST13, and otherwise (ST12; NO), the processing of ST21 is performed. When the measured temperature exceeds the upper limit value (ST12; YES), since the vicinity of the electrode 50 and the electrode 50 is abnormally heated, the electrode 50 is broken. Therefore, the control device 58 performs the cooling of the electrode 50 in step 13 (ST13). On the other hand, when the measured temperature does not exceed the upper limit value (ST12; NO), the temperature is appropriately controlled without the electrode 50 being broken, so in step 21 (ST21), it is determined whether the measured temperature is lower than the lower limit. value.

於步驟13(ST13)中,控制裝置58參照記憶體而決定增加之冷媒之量。又,控制裝置58控制冷媒供給裝置54,使冷媒供給量僅增加所決定之量。圖6係表示電極50之溫度與時間之關係之一例的圖。控制裝置58中,若判定由溫度計測裝置56計測出之計測溫度於時間t1超過上限值(ST12;是),則如該圖所示,以如下之方式進行控制:於時間t1以後,控制冷媒供給裝置54使冷媒供給量增加,使電極50之溫度低於上限值。此處,若控制裝置58控制冷媒供給裝置54而未使冷媒供給量增加,則如該圖所示之虛線般電極50之溫度上升,從而成為電極50之斷裂之原因。關於使電極50之溫度降低之方法,除使冷媒供給裝置54供給之每單位時間之冷媒供給量增加之方法以外,亦可為延長冷媒之 供給時間(控制實行時間)、降低冷媒之溫度且降低電源裝置52供給之電流量的方法。 In step 13 (ST13), the control device 58 determines the amount of refrigerant to be added with reference to the memory. Moreover, the control device 58 controls the refrigerant supply device 54 to increase the amount of refrigerant supply by only the determined amount. Fig. 6 is a view showing an example of the relationship between the temperature of the electrode 50 and time. When the control device 58 determines that the measured temperature measured by the temperature measuring device 56 exceeds the upper limit value at time t1 (ST12; YES), as shown in the figure, control is performed as follows: After time t1, control is performed. The refrigerant supply device 54 increases the supply amount of the refrigerant so that the temperature of the electrode 50 is lower than the upper limit value. When the control device 58 controls the refrigerant supply device 54 without increasing the refrigerant supply amount, the temperature of the electrode 50 rises as shown by the dotted line in the figure, which causes the electrode 50 to break. The method of lowering the temperature of the electrode 50 may be an extension of the refrigerant other than the method of increasing the supply amount of the refrigerant per unit time supplied by the refrigerant supply device 54. A method of supplying time (control execution time), reducing the temperature of the refrigerant, and reducing the amount of current supplied from the power supply device 52.

於步驟21(ST21)中,控制裝置58判定自溫度計測裝置56輸入之計測溫度是否小於下限值。於自溫度計測裝置56輸入之計測溫度小於下限值時(ST21;是),控制裝置58進入ST22之處理,除此以外時,(ST21;否)結束處理。 In step 21 (ST21), the control unit 58 determines whether or not the measured temperature input from the temperature measuring device 56 is less than the lower limit value. When the measured temperature input from the temperature measuring device 56 is less than the lower limit value (ST21; YES), the control device 58 proceeds to the process of ST22, and if not, the processing ends (ST21; NO).

於步驟22(ST22)中,控制裝置58係參照記憶體而決定減少之冷媒之量。又,控制裝置58控制冷媒供給裝置54,使冷媒供給量僅減少所決定之量。控制裝置58中,若判定由溫度計測裝置56計測出之計測溫度於時間t2低於下限值(ST21;是),則如圖6所示,以如下之方式進行控制:於時間t2以後,控制冷媒供給裝置54使冷卻量減少,電極50之溫度超過下限值。此處,若控制裝置58控制冷媒供給裝置54而未使冷卻量減少,則如圖6所示之虛線般電極50之溫度降低,澄清槽41之氣相空間內產生之鉑蒸氣凝結,又,未發現澄清劑(氧化錫)之澄清。關於使電極50之溫度上升之方法,除使冷媒供給裝置54供給之每單位時間之冷媒供給量減少之方法以外,亦可為縮短冷媒之供給時間(控制實行時間)、使冷媒之溫度上升且增加電源裝置52供給之電流量的方法。 In step 22 (ST22), the control device 58 determines the amount of refrigerant to be reduced by referring to the memory. Moreover, the control device 58 controls the refrigerant supply device 54 to reduce the amount of supply of the refrigerant by only the determined amount. When the control device 58 determines that the measured temperature measured by the temperature measuring device 56 is lower than the lower limit value at time t2 (ST21; YES), as shown in FIG. 6, the control is performed as follows: After time t2, The refrigerant supply device 54 is controlled to reduce the amount of cooling, and the temperature of the electrode 50 exceeds the lower limit value. When the control device 58 controls the refrigerant supply device 54 without reducing the amount of cooling, the temperature of the electrode 50 in the gas-line space of the clarification tank 41 is lowered as shown by the dotted line in FIG. No clarification of the clarifying agent (tin oxide) was observed. The method of increasing the temperature of the electrode 50 may be performed by reducing the supply time (control execution time) of the refrigerant and increasing the temperature of the refrigerant, in addition to the method of reducing the supply amount of the refrigerant per unit time supplied by the refrigerant supply device 54. A method of increasing the amount of current supplied from the power supply unit 52.

藉由反覆進行以上之處理,而能以使電極50之溫度處於上限值至下限值之範圍內之方式進行控制,從而可降低玻璃製品之鉑雜質。 By performing the above processing in reverse, it is possible to control the temperature of the electrode 50 within the range from the upper limit to the lower limit, thereby reducing the platinum impurities of the glass product.

其次,對本實施形態之作用進行說明。 Next, the action of this embodiment will be described.

於澄清步驟中,藉由對電極50a、50b之間施加電壓,而使電極50a、50b之間的澄清槽41中流動有電流,從而對澄清槽41進行通電加熱。藉由使熔融玻璃MG通過經加熱之澄清槽41內,而將熔融玻璃MG升溫至特定溫度(就上述組成之玻璃而言,例如為1600℃以上),藉此,熔融玻璃MG中所含之包含O2、CO2或SO2之氣泡吸收由例如SnO2 等澄清劑之還原反應所產生之O2而成長,浮出熔融玻璃MG之液面並釋出。其後,藉由在玻璃供給管43b等中使熔融玻璃MG之溫度降低,而使由SnO2等澄清劑進行還原反應所得之SnO進行氧化反應,藉此使殘留於熔融玻璃MG之氣泡中之O2等氣體成分吸收至熔融玻璃MG中,氣泡消失。澄清劑之氧化反應及還原反應係藉由控制熔融玻璃MG之溫度而進行。 In the clarification step, a voltage is applied between the electrodes 50a and 50b to cause a current to flow in the clarification tank 41 between the electrodes 50a and 50b, thereby energizing and heating the clarification tank 41. By passing the molten glass MG through the heated clarification tank 41, the molten glass MG is heated to a specific temperature (for example, 1600 ° C or higher in the glass of the above composition), whereby the molten glass MG is contained therein. The bubble containing O 2 , CO 2 or SO 2 is absorbed by O 2 generated by a reduction reaction of a clarifying agent such as SnO 2 , and floats out of the surface of the molten glass MG and is released. Then, by lowering the temperature of the molten glass MG in the glass supply tube 43b or the like, SnO obtained by a reduction reaction with a clarifying agent such as SnO 2 is oxidized, thereby remaining in the bubbles of the molten glass MG. The gas component such as O 2 is absorbed into the molten glass MG, and the bubbles disappear. The oxidation reaction and the reduction reaction of the clarifying agent are carried out by controlling the temperature of the molten glass MG.

又,為了抑制電極50之發熱,以與電極50之周圍接觸之方式設置有冷卻管502。冷卻管502係連接於冷媒供給裝置54。即,冷卻管502係藉由使自冷媒供給裝置54供給之冷媒通過,而將與冷卻管502接觸而設置之電極50冷卻。 Further, in order to suppress heat generation of the electrode 50, a cooling pipe 502 is provided in contact with the periphery of the electrode 50. The cooling pipe 502 is connected to the refrigerant supply device 54. In other words, the cooling pipe 502 cools the electrode 50 provided in contact with the cooling pipe 502 by passing the refrigerant supplied from the refrigerant supply device 54.

再者,冷卻管502亦承擔使澄清槽41內之電流密度均勻化之作用。於未使用冷卻管502之情形時,在僅有板狀之電極50的情況下,電流有以最短距離朝向澄清槽41之傾向,澄清槽41內部之電流密度偏於上側。另一方面,冷卻管502可使電阻變小,使電流通過冷卻管502而向澄清槽41之下側引導,藉此,可使電流迂迴而降低電流之偏置。 Further, the cooling pipe 502 also serves to equalize the current density in the clarification tank 41. In the case where the cooling pipe 502 is not used, in the case of only the plate-shaped electrode 50, the current tends to face the clarification groove 41 at the shortest distance, and the current density inside the clarification groove 41 is biased to the upper side. On the other hand, the cooling pipe 502 can reduce the electric resistance, and the current is guided to the lower side of the clarification tank 41 through the cooling pipe 502, whereby the current can be bypassed to reduce the bias of the current.

此時,澄清槽41之氣相空間具有已在澄清槽41之內表面揮發之鉑蒸氣。 At this time, the gas phase space of the clarification tank 41 has platinum vapor which has been volatilized on the inner surface of the clarification tank 41.

於本實施形態中,於電極50設置有溫度計測裝置56,藉由控制裝置58,電極50以成為特定之溫度以上之方式得以控制。所謂特定之溫度係超過澄清槽41之氣相空間內產生之鉑蒸氣凝結之溫度的溫度。即,電極50係以成為超過澄清槽41之氣相空間內產生之鉑蒸氣凝結之溫度之範圍的方式得以控制。因此,可防止澄清槽41之氣相空間內產生之鉑蒸氣凝結,從而防止鉑雜質混入至玻璃中。 In the present embodiment, the temperature measuring device 56 is provided on the electrode 50, and the electrode 50 is controlled so as to be at a specific temperature or higher by the control device 58. The specific temperature is a temperature exceeding the temperature at which the platinum vapor generated in the gas phase space of the clarification tank 41 is condensed. That is, the electrode 50 is controlled so as to exceed the range of the temperature at which the platinum vapor generated in the gas phase space of the clarification tank 41 is condensed. Therefore, the platinum vapor generated in the gas phase space of the clarification tank 41 can be prevented from being condensed, thereby preventing the platinum impurities from being mixed into the glass.

再者,於上述實施形態中,以於電極50a連接有冷媒供給裝置54a、溫度計測裝置56a、控制裝置58a,於電極50b連接有冷媒供給裝置54b、溫度計測裝置56b、控制裝置58b的例作為具體例進行了說 明,但亦可僅使電極50a、50b中之任一者連接冷媒供給裝置54(54a、54b)、溫度計測裝置56(56a、56b)、控制裝置58(58a、58b)。 In the above embodiment, the refrigerant supply device 54a, the temperature measuring device 56a, and the control device 58a are connected to the electrode 50a, and the refrigerant supply device 54b, the temperature measuring device 56b, and the control device 58b are connected to the electrode 50b. Specific examples have been said However, it is also possible to connect only one of the electrodes 50a and 50b to the refrigerant supply device 54 (54a, 54b), the temperature measuring device 56 (56a, 56b), and the control device 58 (58a, 58b).

又,於上述實施形態中,溫度計測裝置56係設置於電極50,但亦可設置於澄清槽41。 Further, in the above embodiment, the temperature measuring device 56 is provided on the electrode 50, but may be provided in the clarification tank 41.

又,於上述實施形態中,以澄清槽41具有凸緣狀之1對電極50a、50b之情形作為具體例進行了說明,但例如亦可僅具有50b。該情形時,例如亦可於玻璃供給管43a設置電極(未圖示),藉由使設置於澄清槽41之電極50b、及設置於玻璃供給管43a之電極之間流動有電流,而對澄清槽41進行通電加熱。 Further, in the above-described embodiment, the case where the clarification groove 41 has the flange-shaped pair of electrodes 50a and 50b has been described as a specific example. However, for example, it may have only 50b. In this case, for example, an electrode (not shown) may be provided in the glass supply tube 43a, and a current may flow between the electrode 50b provided in the clarification tank 41 and the electrode provided in the glass supply tube 43a. The tank 41 is electrically heated.

又,於上述實施形態中,控制裝置58係將預先規定之冷媒增加量及減少量預先記憶於記憶體。然而,控制裝置58例如亦可將根據溫度之冷媒增加量及減少量預先記憶於記憶體。即,控制裝置58亦可根據自溫度計測裝置56輸入之計測溫度,決定冷媒增加量及減少量。藉此,可提高冷卻之精度。 Further, in the above embodiment, the control device 58 preliminarily stores the amount of refrigerant increase and the amount of reduction specified in advance in the memory. However, the control device 58 may, for example, pre-memorize the amount of increase and decrease of the refrigerant according to the temperature in the memory. That is, the control device 58 can also determine the amount of increase and decrease in the amount of refrigerant based on the measured temperature input from the temperature measuring device 56. Thereby, the precision of cooling can be improved.

又,於上述實施形態中,控制裝置58決定冷媒增加量及減少量,控制冷媒供給裝置54,使冷媒供給量僅增減所決定之量。然而,亦可代替控制裝置58而由操作人員(作業者)決定冷媒增加量及減少量,控制冷媒供給裝置54,使冷媒供給量僅增減所決定之量。 Further, in the above embodiment, the control device 58 determines the amount of refrigerant increase and the amount of decrease, and controls the refrigerant supply device 54 to increase or decrease the amount of supply of the refrigerant by a predetermined amount. However, instead of the control device 58, the operator (operator) may determine the amount of refrigerant increase and the amount of decrease, and control the refrigerant supply device 54 to increase or decrease the amount of refrigerant supply by the amount determined.

又,亦可於各電極50a、50b中改變冷卻量。例如,為了促進澄清,亦可使接近玻璃供給管43a之電極50a之溫度高於接近玻璃供給管43b之電極50b之溫度。又,於澄清槽41之流動方向上,促進熔融玻璃MG之澄清之溫度不同,故而亦可將電極50a、50b中之溫度之上限值設為相同,且於溫度之下限值中,將電極50a之下限值設定為高於電極50b之下限值(例如,電極50a中之溫度之下限值:1400℃,電極50b中之溫度之下限值1350℃)。 Further, the amount of cooling can be changed in each of the electrodes 50a and 50b. For example, in order to promote clarification, the temperature of the electrode 50a close to the glass supply tube 43a may be made higher than the temperature of the electrode 50b close to the glass supply tube 43b. Further, since the temperature for promoting the clarification of the molten glass MG is different in the flow direction of the clarification tank 41, the upper limit of the temperature in the electrodes 50a and 50b may be the same, and in the lower limit of the temperature, The lower limit value of the electrode 50a is set to be higher than the lower limit value of the electrode 50b (for example, the lower limit of the temperature in the electrode 50a: 1400 ° C, the lower limit of the temperature in the electrode 50b is 1350 ° C).

又,亦可對與電源裝置52連接之電極50具有之突出部之形狀任 意地進行變更。電極50之突出部自澄清槽41突出,故而受外部氣體之影響之電極50得以冷卻,電極50附近之澄清槽41之氣相空間亦得以冷卻。因此,亦可使自澄清槽41突出之突出部成為線狀,而降低因外部氣體所致之冷卻,抑制電極50附近之冷卻。又,亦可藉由利用保溫材料等將突出部保溫,而抑制電極50附近之冷卻。 Further, the shape of the protruding portion of the electrode 50 connected to the power supply device 52 may be any Intentionally change. The protruding portion of the electrode 50 protrudes from the clarification groove 41, so that the electrode 50 affected by the external gas is cooled, and the gas phase space of the clarification groove 41 in the vicinity of the electrode 50 is also cooled. Therefore, the protruding portion protruding from the clarification tank 41 can be made linear, and the cooling by the outside air can be reduced, and the cooling in the vicinity of the electrode 50 can be suppressed. Further, it is also possible to suppress the cooling in the vicinity of the electrode 50 by keeping the protruding portion warm by using a heat insulating material or the like.

[實施例] [Examples]

使用上述實施形態中所說明之玻璃基板製造裝置,製造玻璃基板。 A glass substrate was produced using the glass substrate manufacturing apparatus described in the above embodiment.

電極50之溫度係以成為1300℃以上、1720℃以下之方式得以控制。 The temperature of the electrode 50 is controlled so as to be 1300 ° C or higher and 1720 ° C or lower.

確認製造出之玻璃基板中所含之鉑雜質,結果,與未控制電極50之溫度之先前之方法相比,玻璃基板中所含之鉑雜質之量減少,良率及品質提高。 The platinum impurities contained in the produced glass substrate were confirmed. As a result, the amount of platinum impurities contained in the glass substrate was reduced, and the yield and quality were improved as compared with the prior method in which the temperature of the electrode 50 was not controlled.

再者,於本說明書中,「鉑或鉑合金(鉑族金屬)」意指包含鉑族元素之金屬,且作為不僅含有包含單一之鉑族元素之金屬而且亦含有鉑族元素之合金的用語使用。此處,所謂鉑族元素係指鉑(Pt)、鈀(Pd)、銠(Rh)、釕(Ru)、鋨(Os)、銥(Ir)之6種元素。 In the present specification, "platinum or platinum alloy (platinum group metal)" means a metal containing a platinum group element, and is used as an alloy containing not only a metal containing a single platinum group element but also a platinum group element. use. Here, the platinum group element means six elements of platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os), and iridium (Ir).

又,本發明尤其適於使用氧化錫(SnO2)作為澄清劑之玻璃基板之製造。先前,澄清劑通常為砷(AS2O3),但近年來自環境負荷之觀點而言,使用氧化錫(SnO2)。作為氧化錫,與亞砷酸相比於脫泡步驟時釋出氣泡之能力較弱,故而必需降低玻璃之黏性而提高脫泡效果,結果,必需以較高之溫度進行澄清。因此,於使用氧化錫(SnO2)作為澄清劑之情形時,與使用砷(亞砷酸;AS2O3)之情形相比,必需將澄清槽加熱至較高之溫度,但於在澄清槽中溫度局部降低之情形時,溫度差變得更大,因此,上述鉑雜質之問題更為明顯。因此,本發明尤其適於使用氧化錫(SnO2)作為澄清劑之玻璃基板之製造。 Further, the present invention is particularly suitable for the production of a glass substrate using tin oxide (SnO 2 ) as a fining agent. Previously, the clarifying agent was usually arsenic (AS 2 O 3 ), but in recent years, tin oxide (SnO 2 ) was used from the viewpoint of environmental load. As tin oxide, the ability to release bubbles at the time of the defoaming step is weaker than that of arsenious acid. Therefore, it is necessary to lower the viscosity of the glass to improve the defoaming effect, and as a result, it is necessary to carry out clarification at a relatively high temperature. Therefore, when using tin oxide (SnO 2 ) as a clarifying agent, it is necessary to heat the clarification tank to a higher temperature than in the case of using arsenic (arsenite; AS 2 O 3 ), but in clarification When the temperature in the bath is locally lowered, the temperature difference becomes larger, and therefore, the above problem of platinum impurities is more remarkable. Therefore, the present invention is particularly suitable for the manufacture of a glass substrate using tin oxide (SnO 2 ) as a fining agent.

又,本發明尤其適於玻璃為無鹼玻璃或僅包含微量鹼之含微量鹼之玻璃的玻璃基板之製造。無鹼玻璃或含微量鹼之玻璃係與含微量鹼之玻璃相比、與含大量鹼之玻璃相比,黏性較高,故而必需以更高之溫度進行澄清,從而必需將澄清槽加熱至較高之溫度。 Further, the present invention is particularly suitable for the production of a glass substrate in which the glass is an alkali-free glass or a glass containing a trace amount of alkali and a small amount of alkali. The alkali-free glass or the glass containing a small amount of alkali has higher viscosity than the glass containing a large amount of alkali, so it is necessary to clarify at a higher temperature, so that the clarification tank must be heated to Higher temperature.

若將澄清槽加熱至較高之溫度,則於在澄清槽中溫度局部降低之情形時,上述鉑雜質之問題更為明顯。因此,本發明尤其適於無鹼玻璃或僅包含微量鹼之含微量鹼之玻璃的玻璃基板之製造。又,尤其適於使用有無鹼玻璃或僅包含微量鹼之含微量鹼之玻璃的液晶顯示裝置用玻璃基板或有機EL用玻璃基板等平板顯示器(FPD)用玻璃基板之製造。 If the clarification tank is heated to a higher temperature, the problem of the above platinum impurities is more pronounced in the case where the temperature is locally lowered in the clarification tank. Therefore, the present invention is particularly suitable for the manufacture of glass substrates which are free of alkali-free glass or glass containing only a small amount of alkali. Further, it is particularly preferably used for the production of a glass substrate for a flat panel display (FPD) such as a glass substrate for a liquid crystal display device or a glass substrate for an organic EL, which has an alkali-free glass or a glass containing a small amount of alkali.

作為FPD用玻璃基板,例如,可列舉液晶顯示器用玻璃基板或有機EL顯示器用玻璃基板。FPD用玻璃基板例如厚度為0.1~0.7mm,尺寸為300×400mm~2850×3050mm,本發明中可改善氣泡或鉑雜質之缺陷,故而適於尺寸更大之玻璃之製造。 The glass substrate for FPD is, for example, a glass substrate for a liquid crystal display or a glass substrate for an organic EL display. The glass substrate for FPD has a thickness of, for example, 0.1 to 0.7 mm and a size of 300 to 400 mm to 2,850 x 3050 mm. In the present invention, defects of bubbles or platinum impurities can be improved, and thus it is suitable for the production of glass having a larger size.

本發明尤其適於製造低溫多晶矽(LTPSS)用玻璃基板之情形。通常,低溫多晶矽(LTPS)用玻璃基板係藉由蝕刻等將玻璃基板細粒化而使用。若藉由蝕刻等將玻璃基板細粒化,則玻璃基板之內部所含之鉑雜質會顯露於表面,於玻璃表面形成凹凸,故而成為問題。因此,本發明尤其適於製造低溫多晶矽(LTPS)用玻璃基板之情形。低溫多晶矽(LTPS)用玻璃基板係應變點較高之玻璃基板,例如,可列舉應變點為675℃以上、較佳為680℃以上、進而較佳為690℃以上之玻璃基板。 The present invention is particularly suitable for the case of manufacturing a glass substrate for low temperature polycrystalline germanium (LTPSS). In general, a low temperature polycrystalline germanium (LTPS) glass substrate is used by finely granulating a glass substrate by etching or the like. When the glass substrate is finely granulated by etching or the like, platinum impurities contained in the inside of the glass substrate are exposed on the surface, and irregularities are formed on the surface of the glass, which is a problem. Therefore, the present invention is particularly suitable for the case of manufacturing a glass substrate for low temperature polycrystalline germanium (LTPS). The glass substrate having a high strain point in the glass substrate of the low temperature polycrystalline silicon (LTPS) is, for example, a glass substrate having a strain point of 675 ° C or higher, preferably 680 ° C or higher, and more preferably 690 ° C or higher.

本發明尤其適於製造FPD用玻璃基板之情形。近年來,於平板顯示器中要求有更高對比度,伴隨高對比度化先前未成為問題之鉑雜質已成為問題。因此,本發明尤其適於製造FPD用玻璃基板之情形。 The present invention is particularly suitable for the case of manufacturing a glass substrate for FPD. In recent years, higher contrast has been demanded in flat panel displays, and platinum impurities which have not been a problem before have become a problem with high contrast. Therefore, the present invention is particularly suitable for the case of manufacturing a glass substrate for FPD.

此外,可於不脫離發明之主旨之範圍內變更為各種較佳之其他形態。 Further, various other preferred embodiments can be made without departing from the spirit of the invention.

41‧‧‧澄清槽 41‧‧‧Clarification tank

43a‧‧‧玻璃供給管 43a‧‧‧glass supply tube

43b‧‧‧玻璃供給管 43b‧‧‧glass supply tube

50a‧‧‧電極 50a‧‧‧electrode

50b‧‧‧電極 50b‧‧‧electrode

52‧‧‧電源裝置 52‧‧‧Power supply unit

54a‧‧‧冷媒供給裝置 54a‧‧‧Refrigerant supply device

54b‧‧‧冷媒供給裝置 54b‧‧‧Refrigerant supply device

56a‧‧‧溫度計測裝置 56a‧‧‧Thermometer

56b‧‧‧溫度計測裝置 56b‧‧‧Thermometer

58a‧‧‧控制裝置 58a‧‧‧Control device

58b‧‧‧控制裝置 58b‧‧‧Control device

502a‧‧‧冷卻管 502a‧‧‧Cooling tube

502b‧‧‧冷卻管 502b‧‧‧ Cooling tube

Claims (7)

一種玻璃基板之製造方法,其特徵在於:其係包含熔解步驟、澄清步驟及成形步驟者;且於上述澄清步驟中所使用之澄清槽係由鉑或鉑合金構成,且具有用以對上述澄清槽進行通電加熱之凸緣狀之電極,於上述澄清步驟中,在上述經通電加熱之澄清槽內,藉由以具有氣相空間之方式調整液位使上述熔融玻璃通過而進行脫泡,為了抑制上述電極之發熱而冷卻上述電極,且上述電極之冷卻係以上述澄清槽之壁之溫度成為超過上述澄清槽之氣相空間內產生之鉑蒸氣凝結之溫度之範圍的方式加以控制。 A method for producing a glass substrate, comprising: a melting step, a clarifying step, and a forming step; and the clarifying tank used in the clarifying step is composed of platinum or a platinum alloy, and has a clarification for the above In the clarification step, the electrode in which the groove is electrically heated is defoamed by passing the molten glass by adjusting the liquid level in the clarification tank heated by the electric current. The electrode is cooled by suppressing the heat generation of the electrode, and the cooling of the electrode is controlled such that the temperature of the wall of the clarification tank becomes a range exceeding the temperature at which the platinum vapor is condensed in the gas phase space of the clarification tank. 如請求項1之玻璃基板之製造方法,其中,於上述澄清步驟中,對上述電極或上述電極附近之澄清槽之溫度進行測定,且基於上述測定出之溫度,調整上述電極之冷卻量。 The method for producing a glass substrate according to claim 1, wherein in the clarifying step, the temperature of the electrode or the clarification tank in the vicinity of the electrode is measured, and the amount of cooling of the electrode is adjusted based on the measured temperature. 如請求項2之玻璃基板之製造方法,其中,於上述澄清步驟中,判定上述測定出之電極或電極附近之澄清槽之溫度是否在預先規定之溫度範圍內,於上述判定之結果為測定出之溫度處於上述預先規定之溫度範圍外時,則調整上述冷卻量。 The method for producing a glass substrate according to claim 2, wherein in the clarifying step, it is determined whether or not the temperature of the clarified tank in the vicinity of the measured electrode or the electrode is within a predetermined temperature range, and the result of the determination is determined When the temperature is outside the predetermined temperature range, the cooling amount is adjusted. 如請求項1至3中任一項之玻璃基板之製造方法,其中,於上述澄清步驟中,使用氧化錫作為澄清劑。 The method for producing a glass substrate according to any one of claims 1 to 3, wherein, in the clarification step, tin oxide is used as a clarifying agent. 如請求項1至4中任一項之玻璃基板之製造方法,其中,上述電極具有用以使冷媒通過之冷卻管,且上述澄清步驟係藉由增減通過上述冷卻管之冷媒之量,而調整冷卻量。 The method for producing a glass substrate according to any one of claims 1 to 4, wherein the electrode has a cooling pipe for passing the refrigerant, and the clarifying step is performed by increasing or decreasing the amount of the refrigerant passing through the cooling pipe. Adjust the amount of cooling. 如請求項5之玻璃基板之製造方法,其中上述冷媒為氣體。 A method of producing a glass substrate according to claim 5, wherein the refrigerant is a gas. 一種玻璃基板製造裝置,其特徵在於:其係包含熔解槽、澄清槽及成形裝置者;且上述澄清槽係由鉑或鉑合金構成,且具有用以對上述澄清槽進行通電加熱之凸緣狀之電極,上述電極係為抑制上述電極之發熱而被冷卻,且上述電極之冷卻係以上述澄清槽之壁之溫度成為超過上述澄清槽之氣相空間內產生之鉑蒸氣凝結之溫度之範圍的方式加以控制。 A glass substrate manufacturing apparatus comprising: a melting tank, a clarification tank, and a molding apparatus; wherein the clarification tank is made of platinum or a platinum alloy, and has a flange shape for electrically heating the clarification tank In the electrode, the electrode is cooled to suppress heat generation of the electrode, and the cooling of the electrode is such that the temperature of the wall of the clarification tank exceeds the temperature of the condensation of platinum vapor generated in the gas phase space of the clarification tank. The way to control.
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