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TWI588105B - Method of manufacturing glass substrate and glass substrate manufacturing apparatus - Google Patents

Method of manufacturing glass substrate and glass substrate manufacturing apparatus Download PDF

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Publication number
TWI588105B
TWI588105B TW103145892A TW103145892A TWI588105B TW I588105 B TWI588105 B TW I588105B TW 103145892 A TW103145892 A TW 103145892A TW 103145892 A TW103145892 A TW 103145892A TW I588105 B TWI588105 B TW I588105B
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temperature region
heat transfer
processing device
molten glass
high temperature
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TW103145892A
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TW201531445A (en
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Ryo Suzuki
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Avanstrate Inc
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • C03B5/225Refining
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • C03B5/42Details of construction of furnace walls, e.g. to prevent corrosion; Use of materials for furnace walls
    • C03B5/43Use of materials for furnace walls, e.g. fire-bricks
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B7/00Distributors for the molten glass; Means for taking-off charges of molten glass; Producing the gob, e.g. controlling the gob shape, weight or delivery tact
    • C03B7/02Forehearths, i.e. feeder channels
    • C03B7/06Means for thermal conditioning or controlling the temperature of the glass
    • C03B7/07Electric means
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/04Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in tank furnaces

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Glass Compositions (AREA)
  • Surface Treatment Of Glass (AREA)
  • Liquid Crystal (AREA)

Description

玻璃基板之製造方法及玻璃基板製造裝置 Glass substrate manufacturing method and glass substrate manufacturing device

本發明係關於一種玻璃基板之製造方法及玻璃基板製造裝置。 The present invention relates to a method of producing a glass substrate and a glass substrate manufacturing apparatus.

通常,玻璃基板係由玻璃原料產生熔融玻璃後,經過將熔融玻璃成形為玻璃基板之步驟而製造。上述步驟中包括對成形前之熔融玻璃進行處理之步驟,例如,包括除去熔融玻璃所內含之微小氣泡之步驟(以下,亦稱為澄清)。澄清係藉由一面加熱澄清管之本體,一面使含有澄清劑之熔融玻璃通過該澄清管本體,利用澄清劑之氧化還原反應去除熔融玻璃中之氣泡來進行。更具體而言,係使粗熔解之熔融玻璃之溫度進一步升高,發揮澄清劑之功能,使氣泡浮出並消泡後,藉由將溫度降低而使熔融玻璃吸收未完全消泡而殘留之相對較小之氣泡。即,澄清包括使氣泡浮出並消泡之處理(以下,亦稱為消泡處理或消泡步驟)及使小氣泡吸收至熔融玻璃之處理(以下,亦稱為吸收處理或吸收步驟)。 Usually, a glass substrate is produced by the step of forming a molten glass from a glass raw material, and shaping|molding a molten glass into a glass substrate. The above steps include a step of treating the molten glass before forming, for example, a step of removing minute bubbles contained in the molten glass (hereinafter, also referred to as clarification). The clarification is carried out by heating the body of the clarification pipe while passing the molten glass containing the clarifying agent through the clarification pipe main body and removing the bubbles in the molten glass by the redox reaction of the clarifying agent. More specifically, the temperature of the molten glass which is coarsely melted is further increased to function as a clarifying agent, and after the bubbles are floated and defoamed, the molten glass is absorbed by incomplete defoaming by lowering the temperature. Relatively small bubbles. That is, the clarification includes a treatment for bubbling and defoaming bubbles (hereinafter also referred to as a defoaming treatment or a defoaming step) and a treatment for absorbing small bubbles into the molten glass (hereinafter also referred to as an absorption treatment or absorption step).

與成形前之高溫之熔融玻璃接觸之構件之內壁需要根據與該構件接觸之熔融玻璃之溫度、所要求之玻璃基板之品質等而由適當之材料構成。例如,已知構成上述澄清管本體之材料通常係使用鉑族金屬之單質或合金(專利文獻1)。鉑族金屬熔點較高,耐熔融玻璃腐蝕性亦優異。 The inner wall of the member that is in contact with the molten glass of high temperature before molding needs to be composed of a suitable material depending on the temperature of the molten glass that is in contact with the member, the quality of the desired glass substrate, and the like. For example, it is known that a material constituting the above-mentioned clarification pipe body is usually a simple substance or an alloy of a platinum group metal (Patent Document 1). The platinum group metal has a high melting point and is excellent in corrosion resistance to molten glass.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2010-111533號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-111533

若熔融玻璃通過將鉑族金屬用於內壁面之處理裝置,則於被加熱之內部表面之與氣相空間(含有氧氣之環境)接觸之部分,鉑族金屬會作為氧化物揮發。另一方面,鉑族金屬之氧化物會於處理裝置之溫度局部降低之位置被還原,還原之鉑族金屬會附著於內壁面。附著於內壁面之鉑族金屬有掉落並混入至熔融玻璃中,作為異物混入至玻璃基板之虞。 If the molten glass is used as a treatment device for the inner wall surface of the platinum group metal, the platinum group metal volatilizes as an oxide in a portion of the heated inner surface which is in contact with the gas phase space (the atmosphere containing oxygen). On the other hand, the oxide of the platinum group metal is reduced at a position where the temperature of the treatment device is locally lowered, and the reduced platinum group metal adheres to the inner wall surface. The platinum group metal adhered to the inner wall surface is dropped and mixed into the molten glass, and is mixed as a foreign matter into the glass substrate.

又,於隨著近年之高精細化發展而對品質要求日益嚴格之以液晶顯示器為代表之顯示器用玻璃基板中,上述源自鉑族金屬等之揮發物之凝聚物的異物混入至熔融玻璃之問題變得更大。 In addition, in the glass substrate for a display, which is represented by a liquid crystal display, which is increasingly demanding in the recent years, the foreign matter derived from the aggregate of the volatile matter of the platinum group metal or the like is mixed into the molten glass. The problem has become bigger.

本發明之目的在於提供一種藉由減小熔融玻璃之處理裝置之溫度局部降低之位置與周圍之溫度差,將其設為基準值以下,而使異物混入至玻璃基板之虞較少,可製造品質較高之玻璃基板的玻璃基板之製造方法以及玻璃基板製造裝置。 It is an object of the present invention to provide a method for reducing the temperature difference between a portion where the temperature of the processing device of the molten glass is locally lowered and the surrounding temperature, and setting it to a reference value or less, thereby making it possible to mix foreign matter into the glass substrate. A method for producing a glass substrate having a high quality glass substrate and a glass substrate manufacturing apparatus.

本發明具有如下形態: The invention has the following form:

(形態1) (Form 1)

一種玻璃基板之製造方法,其係使用具有由內壁與熔融玻璃表面形成之氣相空間,且與上述氣相空間接觸之上述內壁之至少一部分由包含鉑族金屬之材料構成的處理裝置對熔融玻璃進行處理者,且於上述處理裝置之與上述氣相空間接觸之區域,於對熔融玻璃進行處理時形成高溫區域以及溫度比高溫區域低之低溫區域,於上述處理裝置之外部設置有支持上述處理裝置、並將熱自上述高溫區域向上述低溫區域傳導之傳熱介質,並且 上述傳熱介質之傳熱量係以使上述高溫區域與上述低溫區域之溫度差成為基準值以下之方式調整。 A method for producing a glass substrate, which comprises using a gas phase space formed by an inner wall and a surface of a molten glass, and at least a part of the inner wall contacting the gas phase space is made of a material containing a platinum group metal The molten glass is processed, and in the region where the processing device is in contact with the gas phase space, a high temperature region and a low temperature region having a lower temperature than the high temperature region are formed during the treatment of the molten glass, and support is provided outside the processing device. The processing device and the heat transfer medium that conducts heat from the high temperature region to the low temperature region, and The heat transfer amount of the heat transfer medium is adjusted so that the temperature difference between the high temperature region and the low temperature region is equal to or less than a reference value.

例如,高溫區域可為處理裝置之溫度於1600℃以上之溫度範圍內之區域,低溫區域可為處理裝置之溫度於未達1600℃之溫度範圍內之區域。或者,高溫區域可為處理裝置之溫度於1620℃以上之溫度範圍內之區域,低溫區域可為處理裝置之溫度於1590℃以下之溫度範圍內之區域。 For example, the high temperature region may be a region of the processing device at a temperature in the range of 1600 ° C or higher, and the low temperature region may be a region in which the temperature of the processing device is within a temperature range of less than 1600 ° C. Alternatively, the high temperature region may be a region within a temperature range of the processing device at a temperature above 1620 ° C, and the low temperature region may be a region within a temperature range of the processing device at a temperature below 1590 ° C.

或者,亦可設置於處理裝置之設置電極之區域即電極區域及設置有排氣管之區域為低溫區域,低溫區域以外之區域或電極與排氣管之間之區域為高溫區域。 Alternatively, the electrode region in which the electrode is disposed in the processing device and the region in which the exhaust pipe is provided may be a low temperature region, and the region outside the low temperature region or the region between the electrode and the exhaust pipe may be a high temperature region.

此處,處理裝置中包括:熔解槽、澄清裝置、攪拌槽或成形裝置、及利用該等之裝置管輸送熔融玻璃之輸送管、以及將玻璃供給至該等裝置之供給管。處理裝置中之處理包括:玻璃之熔解處理、熔融玻璃之澄清處理、攪拌處理、成形處理、及熔融玻璃之輸送處理、供給處理。 Here, the processing apparatus includes a melting tank, a clarification device, a stirring tank or a forming device, a conveying pipe that transports the molten glass by the device pipes, and a supply pipe that supplies the glass to the devices. The treatment in the treatment apparatus includes: glass melting treatment, clarification treatment of molten glass, stirring treatment, forming treatment, and transportation processing and supply processing of molten glass.

所謂使高溫區域與低溫區域之溫度差成為基準值以下,係指利用傳熱介質之傳熱量調整高溫區域與低溫區域之溫度差,使該溫度差成為預先設定之基準值以下。再者,基準值可視目標玻璃基板中之鉑貴金屬之凝聚物量而定。傳熱介質之傳熱量較佳為以使高溫區域之最高溫度成為1600~1750℃,且低溫區域之最低溫度成為1300~1600℃之方式調節。藉由降低高溫區域與低溫區域之溫度差,使其成為基準值以下,可降低高溫區域中揮發之鉑族金屬於低溫區域凝聚之量。 When the temperature difference between the high temperature region and the low temperature region is equal to or lower than the reference value, the temperature difference between the high temperature region and the low temperature region is adjusted by the heat transfer amount of the heat transfer medium, and the temperature difference is equal to or lower than a predetermined reference value. Further, the reference value may be determined by the amount of aggregate of platinum precious metal in the target glass substrate. The heat transfer amount of the heat transfer medium is preferably adjusted so that the maximum temperature in the high temperature region is 1600 to 1750 ° C, and the lowest temperature in the low temperature region is 1300 to 1600 ° C. By lowering the temperature difference between the high temperature region and the low temperature region to be equal to or lower than the reference value, the amount of the platinum group metal volatilized in the high temperature region in the low temperature region can be reduced.

鉑族金屬意指由單一之鉑族元素構成之金屬、以及包含鉑族元素之金屬之合金。鉑族元素係鉑(Pt)、鈀(Pd)、銠(Rh)、釕(Ru)、鋨(Os)及銥(Ir)這六種元素。 The platinum group metal means a metal composed of a single platinum group element and an alloy of a metal containing a platinum group element. The platinum group elements are six elements of platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os), and iridium (Ir).

較佳為氣相空間中之鉑族金屬之蒸氣壓為0.1Pa~15Pa。 Preferably, the vapor pressure of the platinum group metal in the gas phase space is from 0.1 Pa to 15 Pa.

(形態2) (Form 2)

一種玻璃基板之製造方法,其係使用具有由內壁與熔融玻璃液面形成之氣相空間,且與上述氣相空間接觸之上述內壁之至少一部分由包含鉑族金屬之材料構成的處理裝置對熔融玻璃進行處理者,於上述處理裝置中,於對熔融玻璃進行處理時形成高溫區域與低溫區域,於上述處理裝置之外部設置有支持上述處理裝置、並將熱自上述高溫區域向上述低溫區域傳導之傳熱介質,並且上述傳熱介質之傳熱量係以減小上述高溫區域與上述低溫區域之溫度差之方式調整。 A method for producing a glass substrate, which comprises using a gas phase space formed by an inner wall and a molten glass liquid surface, and at least a part of the inner wall contacting the gas phase space is made of a material containing a platinum group metal In the processing apparatus, in the processing apparatus, a high temperature region and a low temperature region are formed when the molten glass is processed, and the processing device is provided outside the processing device, and heat is supplied from the high temperature region to the low temperature. The region transmits the heat transfer medium, and the heat transfer amount of the heat transfer medium is adjusted to reduce the temperature difference between the high temperature region and the low temperature region.

(形態3) (Form 3)

如形態1或2記載之玻璃基板之製造方法,其中上述基準值為200℃以下,且以使上述高溫區域與上述低溫區域之溫度差成為200℃以下之方式調整利用上述傳熱介質之傳熱量。 The method for producing a glass substrate according to the above aspect, wherein the reference value is 200° C. or less, and the heat transfer amount of the heat transfer medium is adjusted so that a temperature difference between the high temperature region and the low temperature region is 200° C. or less. .

(形態4) (Form 4)

如形態1至3中任一項記載之玻璃基板之製造方法,其中上述處理裝置及上述傳熱介質被耐火絕熱磚覆蓋,上述傳熱介質係導熱率比上述耐火絕熱磚高之耐火磚,且上述傳熱介質之傳熱量係使用上述傳熱介質之導熱率及配置之任一者來調整。 The method for producing a glass substrate according to any one of aspects 1 to 3, wherein the processing device and the heat transfer medium are covered with a refractory insulating brick, wherein the heat transfer medium is a refractory brick having a higher thermal conductivity than the refractory insulating brick, and The amount of heat transfer of the heat transfer medium is adjusted using either of the heat transfer rates and the arrangement of the heat transfer medium.

(形態5) (Form 5)

如形態1至4中任一項記載之玻璃基板之製造方法,其中上述傳熱介質之傳熱量係使用電腦模擬來決定。 The method for producing a glass substrate according to any one of the aspects 1 to 4, wherein the heat transfer amount of the heat transfer medium is determined by computer simulation.

電腦模擬例如可藉由利用有限元素法或無網格法製作處理裝置、傳熱介質及氣相空間之模型,並使用該模型進行傳熱分析來進 行。 Computer simulation can be performed, for example, by using a finite element method or a meshless method to create a model of a processing device, a heat transfer medium, and a gas phase space, and using the model for heat transfer analysis. Row.

(形態6) (Form 6)

如形態1至5中任一項記載之玻璃基板之製造方法,其中上述處理裝置包括使熔融玻璃澄清之澄清裝置,上述傳熱介質係抵接於上述澄清裝置之高溫區域與低溫區域,藉由調整利用上述傳熱介質之傳熱量而調整上述澄清管之高溫區域與低溫區域之溫度差。 The method for producing a glass substrate according to any one of aspects 1 to 5, wherein the processing device includes a clarification device for clarifying the molten glass, wherein the heat transfer medium is in contact with a high temperature region and a low temperature region of the clarification device. The temperature difference between the high temperature region and the low temperature region of the clarification tube is adjusted by adjusting the heat transfer amount of the heat transfer medium.

較佳為處理裝置內之熔融玻璃之最高溫度為1630℃~1720℃。 藉由使最高溫度為1630℃以上,熔融玻璃內之澄清劑可發揮澄清效果,另一方面,藉由使最高溫度為1720℃以下,可降低高溫區域與低溫區域之溫度差,使其成為基準值以下,而可同時實現氣泡之減少及鉑族金屬之揮發量之降低。 Preferably, the maximum temperature of the molten glass in the processing apparatus is from 1630 ° C to 1720 ° C. When the maximum temperature is 1630 ° C or higher, the clarifying agent in the molten glass can exhibit a clarifying effect. On the other hand, by setting the maximum temperature to 1720 ° C or lower, the temperature difference between the high temperature region and the low temperature region can be lowered to serve as a reference. Below the value, the reduction of the bubbles and the reduction of the amount of the platinum group metal can be simultaneously achieved.

作為澄清劑,較佳為使用氧化錫。較佳為熔融玻璃中之氧化錫之含量為0.01~0.3mol%。若氧化錫之含量過少,則無法充分地減少氣泡。另一方面,若氧化錫之含量過多,則氧化錫自熔融玻璃之揮發量會增加,產生揮發之氧化錫之凝聚物混入至熔融玻璃之問題。藉由將氧化錫之含量設為0.01~0.3mol%,可充分地減少氣泡,並抑制氧化錫之凝聚物混入至熔融玻璃。 As the clarifying agent, tin oxide is preferably used. It is preferred that the content of tin oxide in the molten glass is 0.01 to 0.3 mol%. If the content of tin oxide is too small, the bubbles cannot be sufficiently reduced. On the other hand, when the content of the tin oxide is too large, the amount of volatilization of tin oxide from the molten glass increases, and the problem that the volatilized tin oxide is mixed into the molten glass occurs. By setting the content of the tin oxide to 0.01 to 0.3 mol%, it is possible to sufficiently reduce the bubbles and suppress the incorporation of the aggregate of the tin oxide into the molten glass.

(形態7) (Form 7)

一種玻璃基板製造裝置,其包括:處理裝置,其具有由內壁與熔融玻璃表面形成之氣相空間,與上述氣相空間接觸之上述內壁之至少一部分由包含鉑族金屬之材料構成,且於對熔融玻璃進行處理時,於上述處理裝置形成高溫區域以及溫度比高溫區域低之低溫區域;及傳熱介質,其設置於上述處理裝置之外部,支持上述處理裝置,並將熱自上述高溫區域向上述低溫區域傳導,且傳熱量係以使上述高溫區域與上述低溫區域之溫度差成為基準值以下之方式調整。 A glass substrate manufacturing apparatus comprising: a processing apparatus having a gas phase space formed by an inner wall and a surface of a molten glass, wherein at least a portion of the inner wall in contact with the gas phase space is made of a material containing a platinum group metal, and When the molten glass is treated, a high temperature region and a low temperature region having a lower temperature than the high temperature region are formed in the processing device; and a heat transfer medium disposed outside the processing device to support the processing device and to heat from the high temperature The region is conducted to the low temperature region, and the amount of heat transfer is adjusted such that the temperature difference between the high temperature region and the low temperature region is equal to or less than a reference value.

(形態8) (Form 8)

一種玻璃基板製造裝置,其包括:處理裝置,其具有由內壁與熔融玻璃液面形成之氣相空間,與上述氣相空間接觸之上述內壁之至少一部分由包含鉑族金屬之材料構成,且於對熔融玻璃進行處理時,於上述處理裝置形成高溫區域以及低溫區域;及傳熱介質,其設置於上述處理裝置之外部,支持上述處理裝置,並將熱自上述高溫區域向上述低溫區域傳導,且傳熱量係以減小上述高溫區域與上述低溫區域之溫度差之方式調整。 A glass substrate manufacturing apparatus comprising: a processing apparatus having a gas phase space formed by an inner wall and a molten glass surface, wherein at least a portion of the inner wall in contact with the gas phase space is made of a material containing a platinum group metal; And processing the molten glass to form a high temperature region and a low temperature region in the processing device; and a heat transfer medium disposed outside the processing device, supporting the processing device, and transferring heat from the high temperature region to the low temperature region Conduction, and the amount of heat transfer is adjusted in such a manner as to reduce the temperature difference between the high temperature region and the low temperature region.

(形態9) (Form 9)

於上述任一形態中,較佳為氣相空間中之氧濃度為0~10%。藉由減小氧濃度,可降低鉑族金屬之揮發量。 In any of the above aspects, it is preferred that the oxygen concentration in the gas phase space is 0 to 10%. By reducing the oxygen concentration, the amount of volatilization of the platinum group metal can be reduced.

較佳為氣相空間中之鉑族金屬之蒸氣壓為0.1Pa~15Pa。若鉑族金屬之蒸氣壓於該範圍內,則可抑制還原之鉑族金屬附著於內壁面。 Preferably, the vapor pressure of the platinum group metal in the gas phase space is from 0.1 Pa to 15 Pa. When the vapor pressure of the platinum group metal is within this range, the reduced platinum group metal can be prevented from adhering to the inner wall surface.

(形態10) (Form 10)

於上述任一形態中,較佳為進而具有使熔融玻璃中混入之鉑族金屬之凝聚物熔解於熔融玻璃中之凝聚物處理步驟。 In any of the above aspects, it is preferred to further have an agglomerate treatment step of melting the aggregate of the platinum group metal mixed in the molten glass in the molten glass.

較佳為將凝聚物處理步驟開始時溶解於熔融玻璃中之鉑族金屬之濃度設為0.05~20ppm。 Preferably, the concentration of the platinum group metal dissolved in the molten glass at the start of the agglomerate treatment step is 0.05 to 20 ppm.

凝聚物處理步驟中,較佳為藉由將熔融玻璃之溫度設為1660℃~1750℃而調整熔融玻璃中之鉑族金屬之飽和溶解度。 In the agglomerate treatment step, it is preferred to adjust the saturated solubility of the platinum group metal in the molten glass by setting the temperature of the molten glass to 1660 ° C to 1750 ° C.

鉑族金屬之飽和溶解度較佳為藉由調整熔融玻璃之氧活度來調整。例如,較佳為以使氧活度之指標[Fe3+]/([Fe2+]+[Fe3+])成為0.2~0.5之範圍內之方式調整氧活度。 The saturated solubility of the platinum group metal is preferably adjusted by adjusting the oxygen activity of the molten glass. For example, it is preferable to adjust the oxygen activity so that the index of the oxygen activity [Fe 3+ ]/([Fe 2+ ]+[Fe 3+ ]) is in the range of 0.2 to 0.5.

(形態11) (Form 11)

於上述任一形態中,上述由鉑族金屬之揮發物之凝聚所產生之 凝聚物中,例如,最大長度相對於最小長度之比即縱橫比為100以上。又,例如,鉑族金屬之凝聚物之最大長度為50μm~300μm,最小長度為0.5μm~2μm。此處,所謂鉑族金屬之凝聚物之最大長度,係指與拍攝鉑族金屬之凝聚物所獲得之異物圖像外接之外接長方形中之最大長邊之長度,所謂最小長度,係指上述外接長方形之最小短邊之長度。 In any of the above aspects, the agglomeration of the volatiles of the platinum group metal In the aggregate, for example, the ratio of the maximum length to the minimum length, that is, the aspect ratio is 100 or more. Further, for example, the aggregate of the platinum group metal has a maximum length of 50 μm to 300 μm and a minimum length of 0.5 μm to 2 μm. Here, the maximum length of the agglomerate of the platinum group metal refers to the length of the largest long side of the rectangle which is externally connected to the foreign matter image obtained by photographing the aggregate of the platinum group metal, and the minimum length means the above external connection. The length of the smallest short side of the rectangle.

或者,於上述由鉑族金屬之揮發物之凝聚所產生之凝聚物亦可係最大長度相對於最小長度之比即縱橫比為100以上,鉑族金屬之凝聚物之最大長度為100μm以上,較佳為100μm~300μm者。 Alternatively, the aggregate formed by the agglomeration of the volatiles of the platinum group metal may be a ratio of the maximum length to the minimum length, that is, an aspect ratio of 100 or more, and the maximum length of the aggregate of the platinum group metal is 100 μm or more. Good for 100μm~300μm.

(形態12) (Form 12)

於上述任一形態中,上述玻璃基板係顯示器用玻璃基板。又,上述玻璃基板適於氧化物半導體顯示器用玻璃基板或LTPS(low temperature poly-silicon,低溫多晶矽)顯示器用玻璃基板。 In any of the above aspects, the glass substrate is a glass substrate for a display. Further, the glass substrate is suitable for a glass substrate for an oxide semiconductor display or a glass substrate for LTPS (low temperature poly-silicon) display.

根據本發明,可減少異物混入至玻璃基板之虞而製造出品質較高之玻璃基板。 According to the present invention, it is possible to reduce the foreign matter from entering the glass substrate and to produce a glass substrate having a high quality.

100‧‧‧熔解裝置 100‧‧‧melting device

101‧‧‧熔解槽 101‧‧‧melting tank

103‧‧‧攪拌槽 103‧‧‧Stirring tank

103a‧‧‧攪拌器 103a‧‧‧Agitator

104、105‧‧‧輸送管 104, 105‧‧‧ delivery tube

106‧‧‧玻璃供給管 106‧‧‧Glass supply tube

120‧‧‧澄清管(澄清裝置) 120‧‧‧clarification tube (clarification device)

121a、121b‧‧‧電極 121a, 121b‧‧‧ electrodes

122‧‧‧電源裝置 122‧‧‧Power supply unit

123‧‧‧控制裝置 123‧‧‧Control device

127‧‧‧排氣管 127‧‧‧Exhaust pipe

130‧‧‧傳熱介質 130‧‧‧Heat transfer medium

140‧‧‧絕熱材料 140‧‧‧Insulation materials

200‧‧‧成型裝置 200‧‧‧Molding device

圖1係表示本實施形態之玻璃基板之製造方法之步驟之一例的圖。 Fig. 1 is a view showing an example of a procedure of a method for producing a glass substrate of the embodiment.

圖2係示意性地表示進行圖1所示之熔解步驟~切斷步驟之裝置之一例的圖。 Fig. 2 is a view schematically showing an example of a device for performing the melting step to the cutting step shown in Fig. 1;

圖3係表示澄清管120之構成之概略圖。 FIG. 3 is a schematic view showing the configuration of the clarification pipe 120.

圖4係澄清管120之剖視圖。 4 is a cross-sectional view of the clarification tube 120.

圖5係表示澄清管120之上表面之長度方向上之溫度分佈之一例的圖。 Fig. 5 is a view showing an example of a temperature distribution in the longitudinal direction of the upper surface of the clarification pipe 120.

以下,對本發明之玻璃基板之製造方法及玻璃基板製造裝置進行說明。 Hereinafter, a method of producing a glass substrate and a glass substrate manufacturing apparatus of the present invention will be described.

圖1係表示本實施形態之玻璃基板之製造方法之步驟之一例的圖。 Fig. 1 is a view showing an example of a procedure of a method for producing a glass substrate of the embodiment.

(玻璃基板之製造方法之整體概要) (Overall outline of the manufacturing method of the glass substrate)

玻璃基板之製造方法主要具有如下步驟:熔解步驟(ST1)、澄清步驟(ST2)、均質化步驟(ST3)、供給步驟(ST4)、成形步驟(ST5)、緩冷步驟(ST6)、及切斷步驟(ST7)。 The method for producing a glass substrate mainly includes the following steps: a melting step (ST1), a clarification step (ST2), a homogenization step (ST3), a supply step (ST4), a molding step (ST5), a slow cooling step (ST6), and cutting. Break step (ST7).

熔解步驟(ST1)係於熔解槽中進行。於熔解槽中,藉由將玻璃原料投入至儲存於熔解槽中之熔融玻璃之液面並進行加熱而製造熔融玻璃。進而,使熔融玻璃自熔解槽之內側側壁之一個設置於底部之流出口流向下游步驟。 The melting step (ST1) is carried out in a melting tank. In the melting tank, molten glass is produced by putting a glass raw material into the liquid surface of the molten glass stored in the melting tank and heating it. Further, the molten glass is flowed downstream from one of the inner side walls of the melting tank to the bottom.

熔解槽之熔融玻璃之加熱除了對熔融玻璃本身通電而使其自發熱來加熱之方法即通電加熱以外,亦可輔助地施加由燃燒器產生之火焰來熔解玻璃原料。再者,熔融玻璃含有澄清劑。作為澄清劑,已知氧化錫、亞砷酸、銻等,並無特別限制。但是,就減小環境負荷之方面而言,較佳為使用氧化錫作為澄清劑。玻璃基板之氧化錫之含量較佳為0.01~0.3mol%,更佳為0.03~0.2mol%。若氧化錫之含量過少,則無法充分地減少氣泡。另一方面,若氧化錫之含量過多,則氧化錫自熔融玻璃之揮發量會增加,產生揮發之氧化錫之凝聚物混入至熔融玻璃之問題。又,若氧化錫之含量過多,則自熔融玻璃釋出至氣相空間之氧氣會增加,而產生氣相空間之氧濃度過於上升,鉑族金屬自處理裝置之揮發量增加之問題。藉由將氧化錫之含量設為0.01~0.3mol%,可充分地減少氣泡,並且減少氧化錫之凝聚物混入至熔融玻璃之情況。又,可充分地減少氣泡,並且降低鉑族金屬自處理裝置之揮發量。 The heating of the molten glass in the melting tank is performed by heating the molten glass itself to heat it by heating, that is, heating, and it is also possible to apply a flame generated by the burner to melt the glass raw material. Further, the molten glass contains a clarifying agent. As the clarifying agent, tin oxide, arsenious acid, hydrazine, and the like are known, and are not particularly limited. However, in terms of reducing the environmental load, it is preferred to use tin oxide as a fining agent. The content of tin oxide in the glass substrate is preferably from 0.01 to 0.3 mol%, more preferably from 0.03 to 0.2 mol%. If the content of tin oxide is too small, the bubbles cannot be sufficiently reduced. On the other hand, when the content of the tin oxide is too large, the amount of volatilization of tin oxide from the molten glass increases, and the problem that the volatilized tin oxide is mixed into the molten glass occurs. Further, if the content of the tin oxide is too large, the amount of oxygen released from the molten glass to the gas phase space increases, and the oxygen concentration in the gas phase space rises excessively, and the amount of volatilization of the platinum group metal from the treatment device increases. By setting the content of the tin oxide to 0.01 to 0.3 mol%, the bubbles can be sufficiently reduced, and the aggregation of the tin oxide can be reduced to the molten glass. Further, the bubbles can be sufficiently reduced, and the amount of volatilization of the platinum group metal from the processing apparatus can be reduced.

與通常使用之亞砷酸相比,氧化錫之澄清功能較低,但就環境負荷較低之方面而言,可較佳地用作澄清劑。但是,由於氧化錫之澄清功能低於亞砷酸,因此,於使用氧化錫之情形時,必須使熔融玻璃MG之澄清步驟中之熔融玻璃MG之溫度高於先前。因此,後述鉑族金屬自澄清管之揮發量會增加,結果鉑族金屬作為異物混入至玻璃基板之問題變明顯。 Tin oxide has a lower clarifying function than the commonly used arsenious acid, but is preferably used as a clarifying agent in terms of a lower environmental load. However, since the clarifying function of tin oxide is lower than that of arsenious acid, in the case of using tin oxide, it is necessary to make the temperature of the molten glass MG in the clarification step of the molten glass MG higher than the previous one. Therefore, the amount of volatilization of the platinum group metal from the clarification tube will increase, and as a result, the problem that the platinum group metal is mixed as a foreign matter to the glass substrate becomes remarkable.

澄清步驟(ST2)係至少於澄清管中進行。於澄清步驟中,藉由使澄清管內之熔融玻璃升溫,熔融玻璃中所含有之包含氧氣、CO2或SO2之氣泡吸收因澄清劑之還原反應所產生之氧氣,體積增大,浮出至熔融玻璃之液面並被釋出。進而,於澄清步驟中,藉由降低熔融玻璃之溫度,利用澄清劑之還原反應所獲得之還原物質會進行氧化反應。藉此,熔融玻璃中殘存之氣泡中之氧氣等氣體成分被再次吸收至熔融玻璃中,氣泡消失。利用澄清劑之氧化反應及還原反應係藉由控制熔融玻璃之溫度進行。本實施形態之澄清步驟中,對將氧化錫用作澄清劑之澄清方法進行說明。 The clarification step (ST2) is carried out at least in the clarification tube. In the clarification step, by heating the molten glass in the clarification tube, the bubbles containing oxygen, CO 2 or SO 2 contained in the molten glass absorb the oxygen generated by the reduction reaction of the clarifying agent, and the volume increases and floats out. To the liquid surface of the molten glass and released. Further, in the clarification step, the reducing substance obtained by the reduction reaction of the clarifying agent is subjected to an oxidation reaction by lowering the temperature of the molten glass. Thereby, the gas component such as oxygen in the bubbles remaining in the molten glass is again absorbed into the molten glass, and the bubbles disappear. The oxidation reaction and the reduction reaction using the clarifying agent are carried out by controlling the temperature of the molten glass. In the clarification step of this embodiment, a method of clarifying tin oxide as a clarifying agent will be described.

再者,澄清步驟亦可採用於澄清管中製造出減壓環境之空間,於減壓環境下使存在於熔融玻璃中之氣泡成長並消泡之減壓消泡方式。然而,由於減壓消泡方式之裝置複雜且大型,因此,較佳為採用使用澄清劑並使熔融玻璃溫度上升之澄清方法。 Further, the clarification step may be a vacuum defoaming method in which a space in a reduced pressure environment is produced in the clarification tube, and bubbles existing in the molten glass are grown and defoamed under a reduced pressure atmosphere. However, since the apparatus for the vacuum defoaming method is complicated and large, it is preferable to use a clarification method using a clarifying agent to raise the temperature of the molten glass.

均質化步驟(ST3)中,藉由使用攪拌器對通過自澄清管延伸之配管所供給之攪拌槽內之熔融玻璃進行攪拌,而進行玻璃成分之均質化。藉此,可減少作為脈紋等之原因之玻璃之組成不均。 In the homogenization step (ST3), the molten glass in the stirring tank supplied through the pipe extending from the clarification pipe is stirred by a stirrer to homogenize the glass component. Thereby, the composition unevenness of the glass which is a cause of a vein etc. can be reduced.

供給步驟(ST4)中,熔融玻璃係通過自攪拌槽延伸之配管而供給至成形裝置。 In the supply step (ST4), the molten glass is supplied to the molding apparatus through a pipe extending from the stirring tank.

成形步驟(ST5)及緩冷步驟(ST6)係於成形裝置中進行。 The forming step (ST5) and the slow cooling step (ST6) are carried out in a forming apparatus.

成形步驟(ST5)中,將熔融玻璃成形為平板玻璃,並使平板玻璃 流動。成形可採用溢流下拉法。 In the forming step (ST5), the molten glass is formed into a flat glass and the flat glass is made flow. The forming can be carried out by an overflow down-draw method.

緩冷步驟(ST6)中,以使成形並流動之平板玻璃成為所需之厚度且不產生內部應變之方式,進而以不產生翹曲之方式使平板玻璃緩冷。 In the slow cooling step (ST6), the flat glass is formed into a desired thickness and the internal strain is not generated, and the flat glass is gradually cooled without causing warpage.

切斷步驟(ST7)中,於切斷裝置中,藉由將自成形裝置所供給之平板玻璃切斷成特定之長度,而獲得板狀之玻璃基板。切斷之玻璃基板進而被切斷成特定之尺寸,而製做目標尺寸之玻璃基板。 In the cutting step (ST7), in the cutting device, the plate glass supplied from the molding device is cut into a specific length to obtain a plate-shaped glass substrate. The cut glass substrate is further cut into a specific size to prepare a glass substrate of a target size.

圖2係示意性地表示進行本實施形態之熔解步驟(ST1)~切斷步驟(ST7)之裝置之一例的圖。如圖2所示,該裝置主要具有熔解裝置100、及成形裝置200。熔解裝置100具有熔解槽101、澄清管120、攪拌槽103、輸送管104、105、以及玻璃供給管106。 Fig. 2 is a view schematically showing an example of an apparatus for performing the melting step (ST1) to the cutting step (ST7) of the present embodiment. As shown in FIG. 2, the apparatus mainly has a melting apparatus 100 and a forming apparatus 200. The melting apparatus 100 has a melting tank 101, a clarification pipe 120, a stirring tank 103, conveying pipes 104 and 105, and a glass supply pipe 106.

圖2所示之熔解槽101中,設置有未圖示出之燃燒器等加熱器件。於熔解槽中投入添加有澄清劑之玻璃原料,進行熔解步驟。於熔解槽101中熔融之熔融玻璃係經由輸送管104而被供給至澄清管120。 In the melting tank 101 shown in Fig. 2, a heating means such as a burner (not shown) is provided. A glass raw material to which a clarifying agent is added is introduced into the melting tank to carry out a melting step. The molten glass melted in the melting tank 101 is supplied to the clarification pipe 120 via the transfer pipe 104.

澄清管120中,調整熔融玻璃MG之溫度,利用澄清劑之氧化還原反應而進行熔融玻璃之澄清。澄清後之熔融玻璃係經由輸送管105而被供給至攪拌槽。 In the clarification pipe 120, the temperature of the molten glass MG is adjusted, and the clarification of the molten glass is performed by the oxidation-reduction reaction of a clarifier. The clarified molten glass is supplied to the stirring tank via the transfer pipe 105.

攪拌槽103中,熔融玻璃係藉由攪拌器103a進行攪拌而均質化。於攪拌槽103中被均質化之熔融玻璃係經由玻璃供給管106而被供給至成形裝置200。 In the stirring tank 103, the molten glass is homogenized by stirring by the agitator 103a. The molten glass homogenized in the agitation tank 103 is supplied to the molding apparatus 200 via the glass supply pipe 106.

成形裝置200中,藉由溢流下拉法而由熔融玻璃成形為平板玻璃。 In the molding apparatus 200, molten glass is formed into a flat glass by an overflow down-draw method.

(澄清管之構成) (constitution of clarification pipe)

繼而,參照圖3,對澄清管120之構成進行說明。圖3係表示實施形態之澄清管120之構成之概略圖。 Next, the configuration of the clarification pipe 120 will be described with reference to Fig. 3 . Fig. 3 is a schematic view showing the configuration of a clarification pipe 120 of the embodiment.

如圖3所示,於澄清管120之長度方向之兩端之外周面設置有電 極121a、121b,於澄清管120之與氣相空間接觸之壁上設置有排氣管127。再者,澄清管120較佳為鉑、強化鉑或鉑合金製。 As shown in FIG. 3, the peripheral surface of the clarification pipe 120 is provided with electricity on the outer peripheral surface. The poles 121a and 121b are provided with an exhaust pipe 127 on the wall of the clarification pipe 120 that is in contact with the gas phase space. Further, the clarification tube 120 is preferably made of platinum, reinforced platinum or a platinum alloy.

澄清管120之本體、電極121及排氣管127均係由鉑族金屬構成。再者,於本說明書中,「鉑族金屬」意指包含鉑族元素之金屬,係作為不僅指由單一之鉑族元素構成之金屬,亦包括鉑族元素之合金之用語使用。此處,所謂鉑族元素,係指鉑(Pt)、鈀(Pd)、銠(Rh)、釕(Ru)、鋨(Os)、銥(Ir)這六種元素。鉑族金屬價格昂貴,但熔點較高,耐熔融玻璃腐蝕性亦優異。 The body of the clarification tube 120, the electrode 121, and the exhaust pipe 127 are all composed of a platinum group metal. In the present specification, the term "platinum group metal" means a metal containing a platinum group element, and is used as a term for not only a metal composed of a single platinum group element but also an alloy of a platinum group element. Here, the platinum group element means six elements of platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os), and iridium (Ir). Platinum group metals are expensive, but have a high melting point and are excellent in corrosion resistance to molten glass.

再者,於本實施例中,以澄清管120由鉑族金屬構成之情況為具體例進行說明,但澄清管120之一部分亦可由耐火物或其他金屬等構成。 Further, in the present embodiment, a case where the clarification pipe 120 is composed of a platinum group metal will be described as a specific example, but a part of the clarification pipe 120 may be composed of a refractory or other metal.

電極121a、121b係與電源裝置122連接。藉由於電極121a、121b之間施加電壓,電流流通至電極121a、121b之間之澄清管120,而將澄清管120通電加熱。藉由該通電加熱,而將澄清管120之本體加熱至最高溫度成為例如l600℃~1750℃,更佳為1630℃~1750℃,且將自玻璃供給管104供給之熔融玻璃加熱至最高溫度成為適於消泡之溫度例如1600℃~1720℃,更佳為1620℃~1720℃,進一步較佳為1630℃~1720℃。 The electrodes 121a and 121b are connected to the power supply device 122. By applying a voltage between the electrodes 121a and 121b, a current flows to the clarification pipe 120 between the electrodes 121a and 121b, and the clarification pipe 120 is electrically heated. By heating by the electric current, the body of the clarification pipe 120 is heated to a maximum temperature of, for example, 1600 ° C to 1750 ° C, more preferably 1630 ° C to 1750 ° C, and the molten glass supplied from the glass supply pipe 104 is heated to the highest temperature. The temperature suitable for defoaming is, for example, 1600 ° C to 1720 ° C, more preferably 1620 ° C to 1720 ° C, still more preferably 1630 ° C to 1720 ° C.

又,藉由利用通電加熱控制熔融玻璃之溫度,可調節熔融玻璃之黏度,並藉此調節通過澄清管120之熔融玻璃之流速。 Further, by controlling the temperature of the molten glass by electric heating, the viscosity of the molten glass can be adjusted, and thereby the flow rate of the molten glass passing through the clarification pipe 120 can be adjusted.

又,亦可於電極121a、121b設置未圖示出之溫度測量裝置(熱電偶等)。溫度測量裝置測量電極121a、121b之溫度,並將測量結果輸出至控制裝置123。 Further, a temperature measuring device (such as a thermocouple or the like) (not shown) may be provided to the electrodes 121a and 121b. The temperature measuring device measures the temperatures of the electrodes 121a, 121b and outputs the measurement results to the control device 123.

控制裝置123控制電源裝置122對澄清管120進行通電之電流量,並藉此控制通過澄清管120之熔融玻璃之溫度及流速。控制裝置123係包含CPU(Central Processing Unit,中央處理單元)、記憶體等之電 腦。 The control device 123 controls the amount of current that the power source device 122 energizes the clarification tube 120, and thereby controls the temperature and flow rate of the molten glass passing through the clarification tube 120. The control device 123 includes a CPU (Central Processing Unit), a memory, and the like. brain.

於澄清管120之與氣相空間接觸之壁上,設置有排氣管127。排氣管127可為自澄清管120之本體外壁面向外側呈煙囪狀突出之形狀。排氣管127將作為澄清管120之內部空間之一部分的氣相空間120a與澄清管120之外部空間連通。 An exhaust pipe 127 is provided on the wall of the clarification pipe 120 that is in contact with the gas phase space. The exhaust pipe 127 may have a shape protruding from the outer surface of the outer wall of the clarification pipe 120 toward the outer side in a chimney shape. The exhaust pipe 127 communicates the gas phase space 120a which is a part of the inner space of the clarification pipe 120 with the outer space of the clarification pipe 120.

圖4係澄清管120之本體之長度方向及排氣管127之長度方向上之澄清管120之剖視圖。於澄清管120之本體之外壁面、電極121a、121b之外壁面及排氣管127之外壁面設置有傳熱介質130,於比傳熱介質130更外側設置有絕熱材料140。 4 is a cross-sectional view of the clarification pipe 120 in the longitudinal direction of the body of the clarification pipe 120 and the longitudinal direction of the exhaust pipe 127. A heat transfer medium 130 is disposed on the outer wall surface of the body of the clarification pipe 120, the outer wall surfaces of the electrodes 121a and 121b, and the outer wall surface of the exhaust pipe 127, and the heat insulating material 140 is disposed outside the heat transfer medium 130.

傳熱介質130由導熱率高於絕熱材料140之材料構成,與澄清管120之高溫區域及低溫區域抵接,並經由傳熱介質130將熱自高溫區域向低溫區域傳導,藉此發揮降低高溫區域與低溫區域之溫度差之作用。藉由調整傳熱介質130之傳熱量,可調整高溫區域與低溫區域之溫度差,使該溫度差成為預先設定之基準值以下。傳熱介質130無需設置為與澄清管120之整個區域抵接。較佳為將傳熱介質130至少選擇性地設置於與高溫區域抵接之部位、及與低溫區域抵接之部位,並以連接兩者之方式設置傳熱介質130。 The heat transfer medium 130 is made of a material having a higher thermal conductivity than the heat insulating material 140, abuts against the high temperature region and the low temperature region of the clarification pipe 120, and conducts heat from the high temperature region to the low temperature region via the heat transfer medium 130, thereby reducing the high temperature. The effect of the temperature difference between the zone and the low temperature zone. By adjusting the amount of heat transfer of the heat transfer medium 130, the temperature difference between the high temperature region and the low temperature region can be adjusted so that the temperature difference becomes equal to or lower than a predetermined reference value. The heat transfer medium 130 need not be disposed to abut the entire area of the clarification tube 120. Preferably, the heat transfer medium 130 is selectively provided at least in a portion that abuts against the high temperature region and a portion that abuts on the low temperature region, and the heat transfer medium 130 is provided to connect the two.

傳熱介質130之導熱率較佳為絕熱材料140之導熱率之2倍以上,更佳為5倍以上。較佳為將1000℃下之導熱率為2~40W/m‧K之材料用作傳熱介質130。傳熱介質130可使用具有優異之耐火性,且強度(剛度)較高之構件。具體而言,可使用氧化鋁電鑄耐火物、氧化鎂質耐火物、碳化矽耐火物等作為傳熱介質130。藉由將此種材料用於傳熱介質130,可防止澄清管120之變形。 The thermal conductivity of the heat transfer medium 130 is preferably more than twice the thermal conductivity of the heat insulating material 140, more preferably five times or more. It is preferable to use a material having a thermal conductivity of 2 to 40 W/m‧K at 1000 ° C as the heat transfer medium 130. The heat transfer medium 130 can use a member having excellent fire resistance and high strength (stiffness). Specifically, an alumina electroformed refractory, a magnesia refractory, a tantalum carbide refractory or the like can be used as the heat transfer medium 130. By using such a material for the heat transfer medium 130, deformation of the clarification tube 120 can be prevented.

經由傳熱介質130自高溫區域向低溫區域轉移之熱量較佳為0.3kW~20kW,更佳為0.5kW~15kW。 The heat transferred from the high temperature region to the low temperature region via the heat transfer medium 130 is preferably from 0.3 kW to 20 kW, more preferably from 0.5 kW to 15 kW.

絕熱材料140由導熱率比傳熱介質130低之材料構成,發揮調整 自澄清管120及傳熱介質130向外部之散熱量之作用。較佳為將1000℃下之導熱率為0.1~1W/m‧K之材料用作絕熱材料140。具體而言,可將多孔磚、陶瓷纖維等用作絕熱材料140。 The heat insulating material 140 is made of a material having a lower thermal conductivity than the heat transfer medium 130, and is adjusted. The effect of heat dissipation from the clarification tube 120 and the heat transfer medium 130 to the outside. It is preferable to use a material having a thermal conductivity of 0.1 to 1 W/m‧K at 1000 ° C as the heat insulating material 140. Specifically, porous bricks, ceramic fibers, or the like can be used as the heat insulating material 140.

由於傳熱介質130之絕熱性較低,故而僅利用傳熱介質130無法充分地將澄清管120保溫。另一方面,設置於傳熱介質130之外側之絕熱材料140之絕熱性優異,但具有強度較低之傾向。例如,絕熱耐火磚之氣孔率越高,隔熱性越高,但強度越低。因此,僅利用絕熱耐火磚無法防止澄清裝置120之變形。 Since the heat insulating medium 130 has a low heat insulating property, the clarification pipe 120 cannot be sufficiently insulated by only the heat transfer medium 130. On the other hand, the heat insulating material 140 provided on the outer side of the heat transfer medium 130 is excellent in heat insulating property, but tends to have low strength. For example, the higher the porosity of the insulating refractory brick, the higher the heat insulation, but the lower the strength. Therefore, deformation of the clarification device 120 cannot be prevented by only using the insulating refractory brick.

於本實施形態中,藉由設為傳熱介質130與絕熱材料140之雙層結構,可實現利用傳熱介質130支持澄清管120以及利用絕熱材料140進行保溫。 In the present embodiment, by providing a two-layer structure of the heat transfer medium 130 and the heat insulating material 140, the heat transfer medium 130 can be used to support the clarification pipe 120 and the heat insulating material 140 can be used for heat preservation.

再者,所謂高溫區域,表示溫度高於其他區域之區域。於澄清管120之情形時,例如,高溫區域可為澄清管120之溫度在1600℃以上之溫度範圍內之區域,或者,亦可為澄清管120之溫度在1620℃以上之溫度範圍內之區域。又,例如,高溫區域亦可包括澄清管120在對熔融玻璃進行處理時成為最高溫度之區域。所謂低溫區域,表示溫度低於其他區域之區域,具體而言,表示溫度低於高溫區域之區域。於澄清管120之情形時,所謂低溫區域,可為澄清管120之溫度在未達1600℃之溫度範圍內之區域,或者,亦可為澄清管120之溫度在1590℃以下之溫度範圍內之區域。又,例如,低溫區域亦可包括澄清管120在對熔融玻璃進行處理時成為最低溫度之區域。例如,如以下說明所示,澄清管之電極121a、121b附近、以及排氣管127附近之區域成為低溫區域,電極121a、121b與排氣管127之間之區域成為高溫區域。 Further, the high temperature region indicates a region where the temperature is higher than other regions. In the case of clarifying the tube 120, for example, the high temperature region may be a region in which the temperature of the clarification tube 120 is within a temperature range of 1600 ° C or higher, or may be a region in which the temperature of the clarification tube 120 is within a temperature range of 1620 ° C or higher. . Further, for example, the high temperature region may also include a region where the clarification pipe 120 becomes the highest temperature when the molten glass is processed. The low temperature region indicates a region where the temperature is lower than other regions, and specifically, a region where the temperature is lower than the high temperature region. In the case of clarifying the tube 120, the so-called low temperature region may be a region where the temperature of the clarification tube 120 is within a temperature range of less than 1600 ° C, or the temperature of the clarification tube 120 may be within a temperature range of 1590 ° C or lower. region. Further, for example, the low temperature region may include a region where the clarification pipe 120 becomes the lowest temperature when the molten glass is processed. For example, as described below, the region near the electrodes 121a and 121b of the clarification pipe and the vicinity of the exhaust pipe 127 becomes a low temperature region, and the region between the electrodes 121a and 121b and the exhaust pipe 127 becomes a high temperature region.

圖5係表示澄清管120之上表面之長度方向上之溫度分佈之一例的圖,實線為本實施形態之澄清管120之溫度分佈,虛線為先前之澄 清管之溫度分佈。由於在澄清管120之電極121a、121b附近、以及排氣管127附近係自電極121a、121b及排氣管127向外部進行散熱,因此,溫度容易低於澄清管120之其他區域。具體而言,於本實施形態之澄清管120之情形時,由於具有凸緣形狀之電極121a、121b具有較高之散熱功能,因此,電極121a、121b附近之壁之溫度容易低於該壁之周邊部分。進而,例如,為了抑制因過熱導致之破損,電極121a、121b係藉由液體或氣體而冷卻。又,由於排氣管127亦為自澄清管120突出之形狀,故而與排氣管127附近之氣相空間41c接觸之澄清管120之壁之溫度亦低於該壁周邊之溫度。因此,與氣相空間接觸之澄清管120之壁之溫度沿熔融玻璃之流動方向必然具有溫度曲線。換言之,於本實施形態之澄清管120之情形時,澄清管120之溫度不固定,不可避免地產生溫度差。 Fig. 5 is a view showing an example of a temperature distribution in the longitudinal direction of the upper surface of the clarification pipe 120, and the solid line is the temperature distribution of the clarification pipe 120 of the present embodiment, and the broken line is the previous clarification. The temperature distribution of the pigging. Since heat is radiated to the outside from the electrodes 121a and 121b and the exhaust pipe 127 in the vicinity of the electrodes 121a and 121b of the clarification pipe 120 and in the vicinity of the exhaust pipe 127, the temperature is likely to be lower than other regions of the clarification pipe 120. Specifically, in the case of the clarification tube 120 of the present embodiment, since the electrodes 121a and 121b having the flange shape have a high heat dissipation function, the temperature of the wall near the electrodes 121a and 121b is likely to be lower than that of the wall. Peripheral part. Further, for example, in order to suppress breakage due to overheating, the electrodes 121a and 121b are cooled by a liquid or a gas. Further, since the exhaust pipe 127 is also shaped to protrude from the clarification pipe 120, the temperature of the wall of the clarification pipe 120 which is in contact with the gas phase space 41c near the exhaust pipe 127 is also lower than the temperature of the periphery of the wall. Therefore, the temperature of the wall of the clarification tube 120 in contact with the gas phase space necessarily has a temperature profile along the flow direction of the molten glass. In other words, in the case of the clarification pipe 120 of the present embodiment, the temperature of the clarification pipe 120 is not fixed, and a temperature difference is inevitably generated.

本實施形態中,由於在澄清管120之本體之外壁面、電極121a、121b之外壁面及排氣管127之外壁面設置有傳熱介質130,故而可經由傳熱介質130將熱自澄清管120之高溫區域向低溫區域傳導。藉此,可將澄清管120之高溫區域與低溫區域之溫度差抑制於特定範圍內。 In the present embodiment, since the heat transfer medium 130 is provided on the outer wall surface of the main body of the clarification pipe 120, the outer wall surfaces of the electrodes 121a and 121b, and the outer wall surface of the exhaust pipe 127, the heat self-clarification pipe can be passed through the heat transfer medium 130. The high temperature region of 120 conducts to the low temperature region. Thereby, the temperature difference between the high temperature region and the low temperature region of the clarification pipe 120 can be suppressed within a specific range.

於澄清管120中,若產生局部溫度降低,則有澄清未充分進行而降低將要成形之玻璃基板之氣泡品質之虞。與此相對,本實施形態中,可利用傳熱介質130緩和局部溫度降低,將高溫區域與低溫區域之溫度差抑制於特定範圍內。因此,可確實地進行熔融玻璃之消泡,改善將要成形之玻璃基板之氣泡品質。 When the local temperature is lowered in the clarification pipe 120, the clarification is not sufficiently performed, and the quality of the bubble of the glass substrate to be formed is lowered. On the other hand, in the present embodiment, the heat transfer medium 130 can be used to alleviate the local temperature drop, and the temperature difference between the high temperature region and the low temperature region can be suppressed within a specific range. Therefore, the defoaming of the molten glass can be surely performed, and the bubble quality of the glass substrate to be formed can be improved.

又,於包含鉑族金屬之澄清管120中,鉑族金屬會於氣相空間中被氧化而揮發。該揮發於澄清管120之高溫區域尤其明顯。揮發之鉑族金屬之氧化物會於局部溫度降低之區域被還原,固化之鉑族金屬會凝聚並附著於內壁面。附著於內壁面之鉑族金屬之凝聚物有掉落並作為異物混入至澄清步驟中之熔融玻璃中,導致玻璃基板品質之降低之 虞。尤其是於將氧化錫用作澄清劑之情形時,由於為了獲得澄清效果所需之最高溫度增高,故而揮發及附著之問題變得更加明顯。藉由緩和局部之溫度降低,將澄清管120之高溫區域與低溫區域之溫度差抑制於特定範圍內,可防止鉑族金屬之凝聚物附著於內壁面上。 Further, in the clarification tube 120 containing a platinum group metal, the platinum group metal is oxidized and volatilized in the gas phase space. This volatilization in the high temperature region of the clarification tube 120 is particularly noticeable. The volatilized platinum group metal oxide is reduced in a region where the local temperature is lowered, and the solidified platinum group metal aggregates and adheres to the inner wall surface. The aggregate of the platinum group metal attached to the inner wall surface is dropped and mixed as a foreign matter into the molten glass in the clarification step, resulting in a decrease in the quality of the glass substrate. Hey. Particularly in the case where tin oxide is used as a clarifying agent, the problem of volatilization and adhesion becomes more conspicuous because the maximum temperature required for obtaining a clarifying effect is increased. By mitigating the local temperature drop, the temperature difference between the high temperature region and the low temperature region of the clarification tube 120 is suppressed to a specific range, and the aggregation of the platinum group metal can be prevented from adhering to the inner wall surface.

若將氣相空間中之氧濃度設為0%,則可防止鉑族金屬之揮發。因此,就防止鉑族金屬之揮發之觀點而言,較佳為將氣相空間中之氧濃度設為0%。然而,為了將氣相空間之氧濃度始終保持為0%,有需極其減少澄清劑之含量或耗費成本之問題。因此,為了同時實現氣泡之減少、低成本以及鉑族金屬揮發之減少,氣相空間41c之氧濃度較佳為0.01%以上。若氣相空間之氧濃度變得過少,則因熔融玻璃與氣相空間之氧濃度差變大而使由熔融玻璃釋出至氣相空間120a之氧氣增多,熔融玻璃被過度還原,因此結果有成形後之玻璃基板中會殘留硫氧化物或氮氣等之氣泡之虞。另一方面,若氧濃度過大,則會促進鉑族金屬之揮發,有揮發之鉑族金屬之析出量增大之虞。由上述可知,氣相空間中之氧濃度較佳為0~30%,更佳為0.01~10%,進而較佳為0.01~1%。 If the oxygen concentration in the gas phase space is set to 0%, the volatilization of the platinum group metal can be prevented. Therefore, from the viewpoint of preventing volatilization of the platinum group metal, it is preferred to set the oxygen concentration in the gas phase space to 0%. However, in order to keep the oxygen concentration in the gas phase space at 0% at all times, there is a problem that the content of the fining agent or the cost is extremely reduced. Therefore, in order to simultaneously achieve reduction of bubbles, low cost, and reduction of volatilization of platinum group metals, the oxygen concentration in the gas phase space 41c is preferably 0.01% or more. When the oxygen concentration in the gas phase space is too small, the difference in oxygen concentration between the molten glass and the gas phase space increases, and the amount of oxygen released from the molten glass to the gas phase space 120a increases, and the molten glass is excessively reduced. In the glass substrate after molding, bubbles such as sulfur oxides or nitrogen gas remain. On the other hand, if the oxygen concentration is too large, the volatilization of the platinum group metal is promoted, and the precipitation amount of the volatilized platinum group metal is increased. As apparent from the above, the oxygen concentration in the gas phase space is preferably from 0 to 30%, more preferably from 0.01 to 10%, still more preferably from 0.01 to 1%.

氣相空間中之鉑族金屬之蒸氣壓較佳為0.1Pa~15Pa,更佳為3Pa~10Pa。若鉑族金屬之蒸氣壓於該範圍內,則可抑制被還原之鉑族金屬之凝聚物附著於內壁面。 The vapor pressure of the platinum group metal in the gas phase space is preferably from 0.1 Pa to 15 Pa, more preferably from 3 Pa to 10 Pa. When the vapor of the platinum group metal is within this range, aggregation of the reduced platinum group metal to the inner wall surface can be suppressed.

再者,就同時實現鉑族金屬之揮發之抑制與澄清效果之觀點而言,高溫區域與低溫區域之溫度差之基準值較佳為50℃以上且200℃以下,更佳為70℃以上且150。℃以下。若高溫區域與低溫區域之溫度差於200℃以下,較佳為150℃以下,更佳為100℃以下,則可抑制於高溫區域被氧化之鉑族金屬之氧化物於低溫區域還原,可抑制固化或凝聚之鉑族金屬混入至熔融玻璃。另一方面,若高溫區域與低溫區域之溫度差為50℃以上,更佳為70℃以上,則可將熔融玻璃之溫度設為 適於澄清之溫度範圍,可降低氣泡數量。再者,所謂高溫區域與低溫區域之溫度差,亦可設為高溫區域之最高溫度與低溫區域之最低溫度之溫度差。 Further, from the viewpoint of simultaneously suppressing the volatilization of the platinum group metal and the clarifying effect, the reference value of the temperature difference between the high temperature region and the low temperature region is preferably 50° C. or higher and 200° C. or lower, more preferably 70° C. or higher. 150. Below °C. When the temperature difference between the high temperature region and the low temperature region is 200 ° C or less, preferably 150 ° C or less, more preferably 100 ° C or less, the oxidation of the platinum group metal oxide which is oxidized in the high temperature region can be suppressed in the low temperature region, and the suppression can be suppressed. The solidified or agglomerated platinum group metal is mixed into the molten glass. On the other hand, if the temperature difference between the high temperature region and the low temperature region is 50 ° C or higher, more preferably 70 ° C or higher, the temperature of the molten glass can be set to A temperature range suitable for clarification reduces the number of bubbles. Further, the temperature difference between the high temperature region and the low temperature region may be a temperature difference between the highest temperature in the high temperature region and the lowest temperature in the low temperature region.

為了將高溫區域與低溫區域之溫度差設為上述範圍內,低溫區域之最低溫度較佳為1300℃以上且1600℃以下,更佳為1400℃以上且1600℃以下,進而較佳為1500℃以上且1600℃以下。又,高溫區域之最高溫度較佳為1600℃以上且1750℃以下,更佳為1600℃以上且1720℃以下,進而較佳為1610℃以上且1700℃以下。 In order to set the temperature difference between the high temperature region and the low temperature region within the above range, the lowest temperature in the low temperature region is preferably 1300 ° C or more and 1600 ° C or less, more preferably 1400 ° C or more and 1600 ° C or less, and further preferably 1500 ° C or more. And below 1600 ° C. Further, the maximum temperature in the high temperature region is preferably 1600 ° C or more and 1750 ° C or less, more preferably 1600 ° C or more and 1720 ° C or less, and still more preferably 1610 ° C or more and 1700 ° C or less.

高溫區域與低溫區域之溫度差可藉由調整利用傳熱介質130之傳熱量而調整。傳熱量之調整可藉由調節傳熱介質130之導熱率或傳熱介質130之量而進行。 The temperature difference between the high temperature region and the low temperature region can be adjusted by adjusting the amount of heat transfer by the heat transfer medium 130. The adjustment of the amount of heat transfer can be performed by adjusting the thermal conductivity of the heat transfer medium 130 or the amount of the heat transfer medium 130.

又,於傳熱介質130為耐火磚之情形時,藉由調整耐火磚之配置,可控制高溫區域與低溫區域之溫度差。 Further, in the case where the heat transfer medium 130 is a refractory brick, the temperature difference between the high temperature region and the low temperature region can be controlled by adjusting the arrangement of the refractory bricks.

改變傳熱介質130之導熱率或配置、量時之傳熱量例如可藉由使用根據有限元素法或無網格法製作之3D模型之流體力學數值計算(電腦模擬)來算出。例如,製作再現澄清管120、傳熱介質130、絕熱材料140、澄清管120內之熔融玻璃及氣相空間之3D模型,將其劃分成有限數量之區域(計算網格),並規定邊界條件(澄清管12內之熔融玻璃或澄清管12之散熱等)以及材料特性(導熱率等)。繼而,使用利用電腦進行之迭代計算,分析各個計算網格之熱量之進出。藉由使用電腦模擬,可算出傳熱介質130及絕熱材料140之最佳導熱率或配置、量。 The amount of heat transfer when changing the thermal conductivity or the arrangement and amount of the heat transfer medium 130 can be calculated, for example, by using a hydrodynamic numerical calculation (computer simulation) of a 3D model produced by a finite element method or a meshless method. For example, a 3D model of the reproduction clarification tube 120, the heat transfer medium 130, the heat insulating material 140, the molten glass in the clarification tube 120, and the gas phase space is produced, divided into a limited number of regions (computation grid), and boundary conditions are defined. (Clarification of heat dissipation of the molten glass or the clarification tube 12 in the tube 12, etc.) and material properties (thermal conductivity, etc.). Then, iterative calculations using a computer are used to analyze the heat in and out of each computing grid. The optimum thermal conductivity or arrangement and amount of the heat transfer medium 130 and the heat insulating material 140 can be calculated by using computer simulation.

再者,本實施形態試圖抑制之鉑族金屬之凝聚物呈單向細長之線形之形狀,最大長度相對於最小長度之比即縱橫比為100以上。例如,鉑族金屬之凝聚物之最大長度為50μm~300μm,最小長度為0.5μm~2μm。此處,所謂鉑族金屬之凝聚物之最大長度,係指與拍攝鉑族金屬之凝聚物而獲得之異物圖像外接之外接長方形中之最大長邊 之長度,所謂最小長度,係指上述外接長方形之最小短邊之長度。 Further, the aggregate of the platinum group metal which is intended to be suppressed in the present embodiment has a shape of a unidirectionally elongated linear shape, and the aspect ratio of the maximum length to the minimum length, that is, the aspect ratio is 100 or more. For example, the aggregate length of the platinum group metal has a maximum length of 50 μm to 300 μm and a minimum length of 0.5 μm to 2 μm. Here, the maximum length of the agglomerate of the platinum group metal means that the foreign matter image obtained by photographing the aggregate of the platinum group metal is externally connected to the largest long side of the rectangle. The length, the minimum length, refers to the length of the smallest short side of the circumscribed rectangle.

根據本實施形態,可減少鉑族金屬之凝聚物作為異物混入至熔融玻璃之情況。但,為了應對鉑族金屬之凝聚物混入至熔融玻璃之情況,較佳為具有使鉑族金屬之凝聚物熔解於熔融玻璃中之凝聚物處理步驟。藉由使鉑族金屬之凝聚物熔解於熔融玻璃中,可減少製造之玻璃基板中混入之鉑族金屬之凝聚物。 According to this embodiment, it is possible to reduce the case where the aggregate of the platinum group metal is mixed as a foreign matter into the molten glass. However, in order to cope with the case where the aggregate of the platinum group metal is mixed into the molten glass, it is preferred to have an agglomerate treatment step of melting the aggregate of the platinum group metal in the molten glass. By melting the aggregate of the platinum group metal in the molten glass, the aggregate of the platinum group metal mixed in the glass substrate to be produced can be reduced.

以下說明之凝聚物處理步驟較佳為在將溶解於熔融玻璃中之鉑族金屬之濃度設為0.05~20ppm之狀態下進行。即,較佳為將凝聚物處理步驟開始時溶解於熔融玻璃中之鉑族金屬之濃度設為0.05~20ppm。凝聚處理步驟開始時溶解於熔融玻璃中之鉑族金屬之濃度越低,熔融玻璃中之鉑族金屬之凝聚物溶解之溶解量越增大。另一方面,若過於降低鉑族金屬之濃度,則有鉑族金屬會自與熔融玻璃接觸之處理裝置之壁溶出至熔融玻璃而使處理裝置熔損之虞。 The agglomerate treatment step described below is preferably carried out in a state where the concentration of the platinum group metal dissolved in the molten glass is 0.05 to 20 ppm. That is, it is preferable that the concentration of the platinum group metal dissolved in the molten glass at the start of the agglomerate treatment step is 0.05 to 20 ppm. The lower the concentration of the platinum group metal dissolved in the molten glass at the beginning of the coagulation treatment step, the more the dissolved amount of the platinum group metal in the molten glass dissolves. On the other hand, if the concentration of the platinum group metal is excessively lowered, the platinum group metal is eluted from the wall of the treatment apparatus which is in contact with the molten glass to the molten glass to melt the treatment apparatus.

熔融玻璃之鉑族金屬之濃度例如可藉由對澄清管內之熔融玻璃進行採樣,冷卻後粉碎,並採用ICP(inductively coupled plasma,電感耦合電漿)定量分析的測定來求得。 The concentration of the platinum group metal of the molten glass can be determined, for example, by sampling the molten glass in the clarification tube, cooling, pulverizing, and measuring by quantitative analysis using ICP (inductively coupled plasma).

於凝聚物處理步驟中,藉由將熔融玻璃之溫度設為1660℃~1750℃來調整熔融玻璃中之鉑族金屬之飽和溶解度。藉由使熔融玻璃之溫度上升,可提高熔融玻璃中之鉑族金屬之飽和溶解度,可使熔融玻璃中混入之鉑族金屬之凝聚物溶解。另一方面,若過於提高熔融玻璃之溫度,則玻璃成分(例如B2O3)之揮發量會增加,玻璃組成會局部改變,玻璃之熱膨脹係數或黏度等玻璃特性會局部改變,而有在玻璃基板出現脈紋等條紋之虞。又,若提高熔融玻璃之溫度,則鉑族金屬自熔融玻璃之處理裝置之壁面之揮發量會增加。進而,若過於提高熔融玻璃之溫度,則有處理裝置之壁熔損之虞。 In the agglomerate treatment step, the saturated solubility of the platinum group metal in the molten glass is adjusted by setting the temperature of the molten glass to 1660 ° C to 1750 ° C. By increasing the temperature of the molten glass, the saturated solubility of the platinum group metal in the molten glass can be increased, and the aggregate of the platinum group metal mixed in the molten glass can be dissolved. On the other hand, if the temperature of the molten glass is raised too much, the amount of volatilization of the glass component (for example, B 2 O 3 ) will increase, the glass composition will locally change, and the glass properties such as the thermal expansion coefficient or viscosity of the glass will locally change. The glass substrate has streaks such as veins. Moreover, when the temperature of the molten glass is raised, the amount of volatilization of the platinum group metal from the wall surface of the processing apparatus of the molten glass increases. Further, if the temperature of the molten glass is excessively increased, the wall of the processing apparatus is melted.

又,若過於提高熔融玻璃之溫度,則由於過度消泡,熔融玻璃 之氧活度會降低。若於該狀態下進行吸收處理步驟,則會因熔融玻璃中溶存之SO3、CO3被還原而產生SO2、CO2。由於SO2、CO2與SO3、CO3相比,不易溶存於熔融玻璃中,因此,容易作為氣泡殘留,而成為在所製造之玻璃基板產生之氣泡缺陷之原因。 Further, if the temperature of the molten glass is excessively increased, the oxygen activity of the molten glass is lowered due to excessive defoaming. If the absorption process step in this state, will be dissolved in the molten glass because of SO 3, CO 3 is reduced to produce an SO 2, CO 2. Since SO 2 and CO 2 are less likely to be dissolved in the molten glass than SO 3 and CO 3 , they are likely to remain as bubbles, which may cause bubbles defects in the produced glass substrate.

再者,亦可藉由調整面向熔融玻璃之氣相空間之壓力而調整鉑族金屬之飽和溶解度。此處,所謂氣相空間之壓力,意指氣相空間所包含之氣體之總壓。 Furthermore, the saturation solubility of the platinum group metal can also be adjusted by adjusting the pressure of the gas phase space facing the molten glass. Here, the pressure in the gas phase space means the total pressure of the gas contained in the gas phase space.

氣相空間壓力之調整例如可藉由調整氣相空間內之氣體通過排氣管127排出至澄清管120之外側之量(排出量)、或向澄清管120內之氣體例如惰性氣體之供給量、自熔融玻璃釋出之氣體之釋出量而進行。排出量例如可藉由將澄清管120之排氣管127之出口與抽吸裝置連接、或縮窄上述出口等來調節氣相空間與澄清管120之外側之大氣之壓力差之大小而調整。自熔融玻璃釋出之氣體之釋出量例如可藉由調整熔融玻璃所含有之澄清劑之量、玻璃成分之調配比來調整。再者,氣相空間之壓力比澄清管120之外側之大氣壓力高或低例如可根據自排氣管127釋出之氣體量來求得。 The gas phase space pressure can be adjusted, for example, by adjusting the amount of gas discharged into the gas phase space through the exhaust pipe 127 to the outside of the clarification pipe 120 (discharge amount) or the amount of gas supplied to the clarification pipe 120 such as an inert gas. The amount of gas released from the molten glass is released. The discharge amount can be adjusted, for example, by connecting the outlet of the exhaust pipe 127 of the clarification pipe 120 to the suction device, or narrowing the outlet or the like to adjust the pressure difference between the gas phase space and the atmosphere outside the clarification pipe 120. The amount of gas released from the molten glass can be adjusted, for example, by adjusting the amount of the clarifying agent contained in the molten glass and the blending ratio of the glass component. Further, the pressure in the gas phase space is higher or lower than the atmospheric pressure on the outer side of the clarification pipe 120, for example, based on the amount of gas released from the exhaust pipe 127.

若提高氣相空間之壓力,則鉑族金屬之凝聚物之溶解量會增多。另一方面,若過於提高氣相空間之壓力,則有於消泡處理步驟中,熔融玻璃中產生之氣泡難以自熔融玻璃之表面釋出而導致澄清效果不良的情況。又,若過於提高氣相空間之壓力,則與澄清管120之外側之大氣之壓力差變大,氣相空間內之氣流之流速上升。因此,氣相空間內之鉑族金屬之濃度難以不上升而達到飽和狀態,因此,鉑族金屬自澄清管120之壁之揮發量會增加。 If the pressure in the gas phase space is increased, the amount of dissolution of the aggregate of the platinum group metal increases. On the other hand, if the pressure in the gas phase space is excessively increased, the bubbles generated in the molten glass are less likely to be released from the surface of the molten glass in the defoaming treatment step, resulting in a poor clarification effect. Further, if the pressure in the gas phase space is excessively increased, the pressure difference from the atmosphere outside the clarification pipe 120 becomes large, and the flow velocity of the gas flow in the gas phase space increases. Therefore, it is difficult for the concentration of the platinum group metal in the gas phase space to rise to a saturated state, and therefore, the amount of volatilization of the platinum group metal from the wall of the clarification pipe 120 increases.

又,亦可藉由調整熔融玻璃之氧活度來調整鉑族金屬之飽和溶解度。所謂熔融玻璃之氧活度,意指溶存於熔融玻璃中之氧量(作為氣泡而存在於熔融玻璃中者除外)。作為氧活度之指標,可採用 [Fe3+]/([Fe2+]+[Fe3+])。此處,[Fe2+]及[Fe3+]係熔融玻璃所含有之Fe2+及Fe3+之活度,具體而言,係以質量百分比表示之含量。[Fe2+]及[Fe3+]可採用分光光度法來測量。 Further, the saturation solubility of the platinum group metal can also be adjusted by adjusting the oxygen activity of the molten glass. The oxygen activity of the molten glass means the amount of oxygen dissolved in the molten glass (except for the presence of bubbles in the molten glass). As an index of oxygen activity, [Fe 3+ ]/([Fe 2+ ]+[Fe 3+ ]) can be used. Here, the activities of Fe 2+ and Fe 3+ contained in the [Fe 2+ ] and [Fe 3+ ]-based molten glass are specifically expressed by mass percentage. [Fe 2+ ] and [Fe 3+ ] can be measured by spectrophotometry.

可藉由提昇熔融玻璃之氧活度來增加鉑族金屬之凝聚物之溶解量。另一方面,若氧活度過高,則自熔融玻璃釋出之氧量會增加,鉑族金屬容易被氧化而揮發。又,會因熔融玻璃中之溶存氧濃度較高而殘留氧氣泡,成為在所製造之玻璃基板產生之氣泡缺陷之原因。因此,較佳為以使[Fe3+]/([Fe2+]+[Fe3+])成為0.2~0.5之範圍內之方式調整氧活度。 The amount of agglomerates of the platinum group metal can be increased by increasing the oxygen activity of the molten glass. On the other hand, if the oxygen activity is too high, the amount of oxygen released from the molten glass increases, and the platinum group metal is easily oxidized and volatilized. Moreover, the oxygen bubbles remain in the molten glass in the molten glass, and the oxygen bubbles remain, which is a cause of bubble defects generated in the produced glass substrate. Therefore, it is preferred to adjust the oxygen activity so that [Fe 3+ ]/([Fe 2+ ]+[Fe 3+ ]) is in the range of 0.2 to 0.5.

熔融玻璃之氧活度例如可藉由於熔解步驟中調整熔融玻璃所含有之澄清劑、玻璃原料之氧化物之量來調整。又,亦可藉由於澄清步驟中調整凝聚物處理步驟開始前之熔融玻璃之溫度、或於凝聚物處理步驟開始前在熔融玻璃內通入含氧氣體來調整。 The oxygen activity of the molten glass can be adjusted, for example, by adjusting the amount of the clarifying agent contained in the molten glass and the oxide of the glass raw material in the melting step. Further, it may be adjusted by adjusting the temperature of the molten glass before the start of the agglomerate treatment step in the clarification step or by introducing an oxygen-containing gas into the molten glass before the start of the agglomerate treatment step.

[實施例] [Examples]

於實施例1~4中,使用圖4所示之澄清裝置,將氧化錫用作澄清劑,進行1小時熔融玻璃之澄清,將澄清後之熔融玻璃成形為2270mm×2000mm、厚度0.5mm之平板玻璃,製作100片玻璃基板。此時,藉由調整傳熱介質130及絕熱材料140之導熱率而調整自澄清管之最高溫度之區域向電極121a、121b及排氣管127周邊之區域之傳熱量。藉此,可將電極121a、121b及排氣管127周邊之溫度與澄清管之最高溫度之溫度差保持於表1所示之溫度。再者,實施例4之傳熱量為2kW,實施例1~3之傳熱量為2kW。 In Examples 1 to 4, using the clarification device shown in FIG. 4, tin oxide was used as a clarifying agent, and clarification of the molten glass was performed for 1 hour, and the clarified molten glass was formed into a plate of 2270 mm × 2000 mm and a thickness of 0.5 mm. Glass, 100 glass substrates were produced. At this time, by adjusting the thermal conductivity of the heat transfer medium 130 and the heat insulating material 140, the amount of heat transfer from the region of the highest temperature of the clarification pipe to the regions around the electrodes 121a and 121b and the exhaust pipe 127 is adjusted. Thereby, the temperature difference between the temperature around the electrodes 121a and 121b and the exhaust pipe 127 and the maximum temperature of the clarification pipe can be maintained at the temperature shown in Table 1. Further, the heat transfer amount of Example 4 was 2 kW, and the heat transfer amounts of Examples 1 to 3 were 2 kW.

[比較例] [Comparative example]

調整傳熱介質及絕熱材料之導熱率,且不調整自澄清管之最高溫度之區域向電極121a、121b及排氣管127周邊之區域之傳熱量,除此以外,以與實施例相同之方法製成100片玻璃基板。其結果,電極 121a、121b及排氣管127周邊之溫度與澄清管之最高溫度之溫度差成為表1所示之溫度。 The heat transfer rate of the heat transfer medium and the heat insulating material is adjusted, and the heat transfer amount of the region from the highest temperature of the clarification pipe to the regions around the electrodes 121a and 121b and the exhaust pipe 127 is not adjusted, and the same method as in the embodiment is used. 100 glass substrates were produced. The result, the electrode The temperature difference between the temperature around 121a, 121b and the exhaust pipe 127 and the maximum temperature of the clarification pipe becomes the temperature shown in Table 1.

再者,實施例1~6及比較例中,玻璃基板之玻璃組成為:SiO2為66.6mol%、Al2O3為10.6mol%、B2O3為11.0mol%、MgO、CaO、SrO及BaO之合計量為11.4mol%、SnO2為0.15mol%、Fe2O3為0.05mol%、鹼金屬氧化物為0.2mol%,應變點為660℃,黏度為102.5泊時之熔融玻璃之溫度為1570℃。 Further, in Examples 1 to 6 and Comparative Examples, the glass composition of the glass substrate was 66.6 mol% of SiO 2 , 10.6 mol% of Al 2 O 3 , and 11.0 mol% of B 2 O 3 , MgO, CaO, and SrO. And the total amount of BaO is 11.4 mol%, SnO 2 is 0.15 mol%, Fe 2 O 3 is 0.05 mol%, alkali metal oxide is 0.2 mol%, strain point is 660 ° C, and viscosity is 10 2.5 poise. The temperature is 1570 °C.

[鉑族金屬之凝聚物之計數] [Counting of agglomerates of platinum group metals]

於光學顯微鏡下對實施例1~6及比較例中製作之玻璃基板進行觀察,數出玻璃基板中之鉑族金屬之凝聚物之個數。再者,將最高溫度與最低溫度之溫度差為120℃之情形時每1kg之鉑族金屬之凝聚物之個數設為1,按比率表示各條件下之鉑族金屬之凝聚物之個數。顯然,相對於溫度差為250℃之情形時(比較例),溫度差為50℃、80℃、100℃、120℃、170℃、200℃之情形時(實施例1~6)能夠抑制玻璃基板中之鉑族金屬之凝聚物之量。再者,作為鉑族金屬之凝聚物,將縱橫比為100以上,且最大長度為100μm以上之鉑異物進行計數。 The glass substrates produced in Examples 1 to 6 and Comparative Examples were observed under an optical microscope, and the number of aggregates of platinum group metals in the glass substrate was counted. In addition, when the temperature difference between the highest temperature and the lowest temperature is 120 ° C, the number of agglomerates per 1 kg of the platinum group metal is set to 1, and the number of aggregates of the platinum group metal under each condition is expressed as a ratio. . Obviously, when the temperature difference is 250 ° C (comparative example), when the temperature difference is 50 ° C, 80 ° C, 100 ° C, 120 ° C, 170 ° C, 200 ° C (Examples 1 to 6), the glass can be suppressed. The amount of agglomerates of platinum group metals in the substrate. Further, as agglomerates of the platinum group metal, platinum foreign matters having an aspect ratio of 100 or more and a maximum length of 100 μm or more were counted.

該凝聚物導致之缺陷個數之每單位質量之容許等級例如為0.02個/kg以下。於實施例1~6之玻璃基板中,鉑族金屬之凝聚物之缺陷個數於容許等級範圍內。另一方面,比較例之玻璃基板中,鉑族金屬之異物之缺陷個數超過了容許等級。 The allowable level per unit mass of the number of defects caused by the agglomerates is, for example, 0.02/kg or less. In the glass substrates of Examples 1 to 6, the number of defects of the aggregate of the platinum group metal was within the allowable level. On the other hand, in the glass substrate of the comparative example, the number of defects of the foreign matter of the platinum group metal exceeded the allowable level.

(玻璃組成) (glass composition)

若為含有氧化錫之無鹼玻璃基板、或者含有氧化錫之低鹼玻璃基板,則本實施形態之效果變明顯。無鹼玻璃或低鹼玻璃之玻璃黏度比鹼玻璃高。因此,於熔解步驟中必須提昇熔融溫度,大量氧化錫會於熔解步驟中被還原,因此,為了獲得澄清效果,必須提昇澄清步驟中之熔融玻璃溫度,進一步促進氧化錫之還原,且降低熔融玻璃之黏度。即,於製造含有氧化錫之無鹼玻璃基板、或含有氧化錫之低鹼玻璃基板之情形時,由於必須提昇澄清步驟中之熔融玻璃溫度,因此,容易產生鉑或鉑合金等之揮發。此處,於本說明書中,所謂無鹼玻璃基板,係實質上不含鹼金屬氧化物(Li2O、K2O、及Na2O)之玻璃。又,所謂低鹼玻璃,係鹼金屬氧化物之含量(Li2O、K2O、及Na2O之含量)超過0且為0.8mol%以下之玻璃。 The effect of the present embodiment is remarkable in the case of an alkali-free glass substrate containing tin oxide or a low-alkali glass substrate containing tin oxide. The glass viscosity of alkali-free glass or low-alkali glass is higher than that of alkali glass. Therefore, in the melting step, the melting temperature must be raised, and a large amount of tin oxide is reduced in the melting step. Therefore, in order to obtain a clarifying effect, it is necessary to raise the temperature of the molten glass in the clarification step, further promote the reduction of tin oxide, and lower the molten glass. Viscosity. In other words, in the case of producing an alkali-free glass substrate containing tin oxide or a low-alkali glass substrate containing tin oxide, since the temperature of the molten glass in the clarification step must be increased, volatilization of platinum or a platinum alloy or the like is likely to occur. Here, in the present specification, the alkali-free glass substrate is a glass which does not substantially contain an alkali metal oxide (Li 2 O, K 2 O, and Na 2 O). In addition, the low alkali glass is a glass in which the content of the alkali metal oxide (the content of Li 2 O, K 2 O, and Na 2 O) exceeds 0 and is 0.8 mol% or less.

作為本實施形態中所製造之玻璃基板,例示有如下玻璃組成之玻璃基板。因此,以玻璃基板具有如下玻璃組成之方式調製玻璃原 料。本實施形態中製造之玻璃基板例如含有:SiO2 55~75mol%、Al2O3 5~20mol%、B2O3 0~15mol%、RO 5~20mol%(RO為MgO、CaO、SrO及BaO之合計量)、R'2O為0~0.4mol%(R'為Li2O、K2O、及Na2O之合計量)、SnO2 0.01~0.4mol%。 As the glass substrate produced in the present embodiment, a glass substrate having the following glass composition is exemplified. Therefore, the glass raw material is prepared in such a manner that the glass substrate has the following glass composition. The glass substrate produced in the present embodiment contains, for example, SiO 2 55 to 75 mol%, Al 2 O 3 5 to 20 mol%, B 2 O 3 0 to 15 mol%, and RO 5 to 20 mol% (RO is MgO, CaO, SrO, and The total amount of BaO) and R' 2 O are 0 to 0.4 mol% (R' is a total amount of Li 2 O, K 2 O, and Na 2 O), and SnO 2 is 0.01 to 0.4 mol%.

此時,可含有SiO2、Al2O3、B2O3、及RO(R為Mg、Ca、Sr及Ba中上述玻璃基板所含有之所有元素)之至少一種,且莫耳比((2×SiO2)+Al2O3)/((2×B2O3)+RO)可為4.0以上。莫耳比((2×SiO2)+Al2O3)/((2×B2O3)+RO)為4.0以上之玻璃係高溫黏性較高之玻璃之一例。高溫黏性較高之玻璃通常需要提昇澄清步驟中之熔融玻璃溫度,因此,容易產生鉑族金屬(例如,鉑或鉑合金)之揮發。即,於製造具有此種組成之玻璃基板之情形時,抑制鉑族金屬之凝聚物作為異物混入至熔融玻璃中等本實施形態之效果變得明顯。再者,所謂高溫黏性表示熔融玻璃成為高溫時之玻璃之黏性,此處所謂之高溫例如表示1300℃以上。 In this case, at least one of SiO 2 , Al 2 O 3 , B 2 O 3 , and RO (R is all of the elements contained in the glass substrate of Mg, Ca, Sr, and Ba) may be contained, and the molar ratio (( 2 × SiO 2 ) + Al 2 O 3 ) / ((2 × B 2 O 3 ) + RO) may be 4.0 or more. A glass having a high temperature viscosity of 4.0 or more in a molar ratio of (2 × SiO 2 ) + Al 2 O 3 ) / ((2 × B 2 O 3 ) + RO) is exemplified. A glass having a high temperature viscosity is generally required to raise the temperature of the molten glass in the clarification step, and therefore, volatilization of a platinum group metal (for example, platinum or a platinum alloy) is liable to occur. In other words, in the case of producing a glass substrate having such a composition, the effect of suppressing the aggregation of the platinum group metal as a foreign matter into the molten glass is remarkable. In addition, the high-temperature viscosity means the viscosity of the glass when the molten glass becomes a high temperature, and the high temperature here means, for example, 1300 ° C or more.

根據本實施形態,即便玻璃基板中之鹼金屬氧化物之含有率為0~0.8mol%,亦可抑制鉑族金屬之凝聚物作為異物混入至熔融玻璃中。由於鹼金屬氧化物之含有率越小,高溫黏性越高,因此,鹼金屬氧化物之含有率為0~0.8mol%之玻璃之高溫黏性高於鹼金屬氧化物之含有率超過0.8mol%之玻璃。高溫黏性較高之玻璃通常需要提昇澄清步驟中之熔融玻璃溫度,因此,容易產生鉑族金屬之揮發。即,於使用該高溫黏性較高之玻璃時,抑制鉑族金屬之凝聚物作為異物混入至熔融玻璃中之本實施形態之效果變明顯。 According to the present embodiment, even if the content of the alkali metal oxide in the glass substrate is 0 to 0.8 mol%, the aggregate of the platinum group metal can be prevented from being mixed into the molten glass as a foreign matter. Since the content of the alkali metal oxide is smaller, the viscosity at high temperature is higher. Therefore, the high-temperature viscosity of the glass having an alkali metal oxide content of 0 to 0.8 mol% is higher than the content of the alkali metal oxide exceeding 0.8 mol. % of the glass. A glass having a high viscosity at a high temperature generally needs to raise the temperature of the molten glass in the clarification step, and therefore, volatilization of a platinum group metal is liable to occur. In other words, when the glass having a high temperature and high viscosity is used, the effect of suppressing the aggregation of the platinum group metal as a foreign matter in the molten glass becomes remarkable.

本實施形態所使用之熔融玻璃可為黏度為102.5泊時之溫度為1500~1700℃、1600~1700℃之玻璃組成。如上所述,高溫黏性較高之玻璃通常需要提昇澄清步驟中之熔融玻璃溫度,因此,容易產生鉑族金屬之揮發。即,即便為高溫黏性之玻璃組成,本實施形態之上述效果 亦變明顯。 The molten glass used in the present embodiment may have a glass composition having a viscosity of 10 2.5 poise and a temperature of 1500 to 1700 ° C and 1600 to 1700 ° C. As described above, a glass having a high temperature viscosity is generally required to raise the temperature of the molten glass in the clarification step, and therefore, volatilization of the platinum group metal is liable to occur. That is, even in the case of a high-temperature viscous glass composition, the above effects of the present embodiment are also remarkable.

本實施形態所使用之熔融玻璃之應變點可為650℃以上,更佳為660℃以上,進而較佳為690℃以上,尤佳為730℃以上。又,應變點較高之玻璃具有黏度為102.5泊時之熔融玻璃之溫度提高之傾向。即,製造應變點越高之玻璃基板之情形時,本實施形態之上述效果越明顯。又,應變點越高之玻璃越可用於高精細顯示器,因此,對鉑族金屬之凝聚物作為異物混入之問題之要求越嚴格。因此,應變點越高之玻璃基板,能夠抑制鉑族金屬之凝聚物混入之本實施形態越適合。 The strain point of the molten glass used in the present embodiment may be 650 ° C or higher, more preferably 660 ° C or higher, further preferably 690 ° C or higher, and particularly preferably 730 ° C or higher. Further, the glass having a higher strain point has a tendency to increase the temperature of the molten glass at a viscosity of 10 2.5 poise. That is, in the case of producing a glass substrate having a higher strain point, the above-described effects of the present embodiment are more remarkable. Further, the higher the strain point, the more the glass can be used for a high-definition display, and therefore, the stricter problem of the problem that the aggregate of the platinum group metal is mixed as a foreign matter. Therefore, the glass substrate having a higher strain point is more suitable for the present embodiment in which the aggregation of the platinum group metal can be suppressed.

又,於以成為含有氧化錫、且黏度為102.5泊時之熔融玻璃之溫度為1500℃以上之玻璃之方式熔解玻璃原料之情形時,本實施形態之上述效果變明顯,黏度為102.5泊時之熔融玻璃之溫度例如為1500℃~1700℃,亦可為1550℃~1650℃。 In the case where the glass raw material is melted so that the temperature of the molten glass containing tin oxide and the viscosity is 10 2.5 poise is 1500 ° C or higher, the above effect of the embodiment becomes remarkable, and the viscosity is 10 2.5 poise. The temperature of the molten glass is, for example, 1500 ° C to 1700 ° C, and may be 1550 ° C to 1650 ° C.

位於玻璃基板之表面之鉑族金屬之凝聚物若於使用玻璃基板之面板製造步驟脫離,則有脫離之部分成為凹部,無法將形成於玻璃基板上之薄膜均勻地形成,而引起畫面之顯示缺陷之問題。進而,若玻璃基板中存在鉑族金屬之凝聚物,則有於緩冷步驟中,因玻璃與鉑族金屬之熱膨脹率差而產生應變,故而引起畫面之顯示缺陷之問題。因此,本實施形態適於對畫面之顯示缺陷之要求嚴格之顯示器用玻璃基板之製造。尤其適於對畫面之顯示缺陷之要求更嚴格之使用了IGZO(銦、鎵、鋅、氧)等氧化物半導體之氧化物半導體顯示器用玻璃基板以及使用了LTPS(低溫多晶矽)半導體之LTPS顯示器用玻璃基板等高精細顯示器用玻璃基板。 When the aggregate of the platinum group metal located on the surface of the glass substrate is detached from the panel manufacturing step using the glass substrate, the portion which is detached becomes a concave portion, and the film formed on the glass substrate cannot be uniformly formed, thereby causing display defects of the screen. The problem. Further, when agglomerates of a platinum group metal are present in the glass substrate, there is a problem in that the film is deformed due to a difference in thermal expansion coefficient between the glass and the platinum group metal in the slow cooling step, which causes a display defect of the screen. Therefore, this embodiment is suitable for the manufacture of a glass substrate for a display which is strict in display defects of a screen. Particularly suitable for use in LTPS displays using oxide semiconductors such as IGZO (indium, gallium, zinc, and oxygen) for oxide semiconductor displays and LTPS displays using LTPS (low temperature polysilicon) semiconductors A glass substrate for a high-definition display such as a glass substrate.

由上述可知,本實施形態中製造之玻璃基板適於包括平板顯示器用玻璃基板在內之顯示器用玻璃基板。適於使用了IGZO等氧化物半導體之氧化物半導體顯示器用玻璃基板以及使用了LTPS半導體之LTPS顯示器用玻璃基板。又,本實施形態中製造之玻璃基板適於要 求鹼金屬氧化物之含量極低之液晶顯示器用玻璃基板。又,亦適於有機EL顯示器用玻璃基板。換言之,本實施形態之玻璃基板之製造方法適於顯示器用玻璃基板之製造,尤其適於液晶顯示器用玻璃基板之製造。 As described above, the glass substrate produced in the present embodiment is suitable for a glass substrate for a display including a glass substrate for a flat panel display. A glass substrate for an oxide semiconductor display using an oxide semiconductor such as IGZO or a glass substrate for an LTPS display using an LTPS semiconductor. Moreover, the glass substrate manufactured in the present embodiment is suitable for A glass substrate for a liquid crystal display having an extremely low content of an alkali metal oxide. Further, it is also suitable for a glass substrate for an organic EL display. In other words, the method for producing a glass substrate of the present embodiment is suitable for the production of a glass substrate for a display, and is particularly suitable for the production of a glass substrate for a liquid crystal display.

又,本實施形態中製造之玻璃基板亦可應用於覆蓋玻璃、磁碟用玻璃、太陽電池用玻璃基板等。 Further, the glass substrate produced in the present embodiment can also be applied to a cover glass, a glass for a disk, a glass substrate for a solar cell, or the like.

以上,對本發明之玻璃基板之製造方法進行了詳細之說明,但本發明不受上述實施形態之限定,當然可於不脫離本發明宗旨之範圍內進行各種改良或變更。 The method of producing the glass substrate of the present invention has been described in detail above, but the present invention is not limited to the above-described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention.

例如,雖然未圖示出,但亦可藉由於高溫區域與低溫區域之間設置冷媒之循環管,使冷媒於循環管之內部循環,而將冷媒作為傳熱介質。於該情形時,可藉由對冷媒之循環量進行控制來調整高溫區域與低溫區域之間之傳熱量,可調整高溫區域與低溫區域之溫度差。 For example, although not shown, a refrigerant may be circulated inside the circulation pipe by a circulation pipe provided with a refrigerant between the high temperature region and the low temperature region, and the refrigerant may be used as a heat transfer medium. In this case, the amount of heat transfer between the high temperature region and the low temperature region can be adjusted by controlling the circulation amount of the refrigerant, and the temperature difference between the high temperature region and the low temperature region can be adjusted.

於循環管中循環之冷媒可為水等液體,亦可為空氣等氣體。 The refrigerant circulating in the circulation pipe may be a liquid such as water or a gas such as air.

循環管可使用熔點較高之金屬材料。具體而言,可將鉑、銠、銀、鈀、金、或該等之合金用作循環管之材料。 The circulating pipe can use a metal material having a higher melting point. Specifically, platinum, rhodium, silver, palladium, gold, or the like may be used as the material of the circulation tube.

於上述說明中,以澄清管120為主對本發明進行了說明,但不僅限於澄清管120,亦可於熔解裝置100之其他部分(熔解槽101、攪拌槽103、輸送管104、105、玻璃供給管106)或成形裝置200設置傳熱介質130或絕熱材料140。 In the above description, the present invention has been described mainly with the clarification pipe 120, but it is not limited to the clarification pipe 120, and may be other parts of the melting device 100 (melting tank 101, stirring tank 103, conveying pipe 104, 105, glass supply). The tube 106) or the forming device 200 is provided with a heat transfer medium 130 or a heat insulating material 140.

120‧‧‧澄清管(澄清裝置) 120‧‧‧clarification tube (clarification device)

121a、121b‧‧‧電極 121a, 121b‧‧‧ electrodes

127‧‧‧排氣管 127‧‧‧Exhaust pipe

130‧‧‧傳熱介質 130‧‧‧Heat transfer medium

140‧‧‧絕熱材料 140‧‧‧Insulation materials

Claims (9)

一種玻璃基板之製造方法,其係使用處理裝置對熔融玻璃進行處理者,該處理裝置具有由內壁與熔融玻璃表面形成之氣相空間,且與上述氣相空間接觸之上述內壁之至少一部分由包含鉑族金屬之材料構成,且於上述處理裝置中對上述熔融玻璃進行處理時,於與上述氣相空間接觸之內壁形成高溫區域以及溫度比上述高溫區域低之低溫區域,上述處理裝置設置有用以對上述處理裝置之本體通電加熱的電極、或連通上述氣相空間及上述處理裝置之外部空間的排氣管中至少一者,於上述處理裝置之本體及上述電極或上述排氣管之外部設置有支持上述處理裝置、並將熱自上述高溫區域向上述低溫區域傳導之傳熱介質,並且上述傳熱介質之傳熱量係以使上述電極或上述排氣管之至少任一者為原因而產生之上述低溫區域與上述高溫區域之溫度差成為基準值以下之方式調整。 A method for producing a glass substrate, wherein the processing device is configured to treat a molten glass having a gas phase space formed by an inner wall and a surface of the molten glass, and at least a portion of the inner wall in contact with the gas phase space When the molten glass is treated by the material containing the platinum group metal in the processing apparatus, the high temperature region is formed on the inner wall in contact with the gas phase space, and the low temperature region is lower than the high temperature region, and the processing device is Providing at least one of an electrode for electrically heating the main body of the processing device or an exhaust pipe connecting the gas phase space and an outer space of the processing device to the body of the processing device and the electrode or the exhaust pipe Provided outside the heat transfer medium that supports the processing device and conducts heat from the high temperature region to the low temperature region, and the heat transfer medium has a heat transfer amount such that at least one of the electrode or the exhaust pipe is The temperature difference between the low temperature region and the high temperature region caused by the cause is less than or equal to the reference value. Type adjustment. 如請求項1之玻璃基板之製造方法,其中上述基準值依目標玻璃基板中之鉑貴金屬之凝聚物量而定。 The method of producing a glass substrate according to claim 1, wherein the reference value is determined according to the amount of aggregate of platinum precious metal in the target glass substrate. 一種玻璃基板之製造方法,其係使用處理裝置對熔融玻璃進行處理者,該處理裝置具有由內壁與熔融玻璃液面形成之氣相空間,且與上述氣相空間接觸之上述內壁之至少一部分由包含鉑族金屬之材料構成,且於上述處理裝置中對上述熔融玻璃進行處理時,於與上述氣相空間接觸之內壁形成高溫區域以及溫度比上述高溫區域低之 低溫區域,上述處理裝置設置有用以對上述處理裝置之本體通電加熱的電極、或連通上述氣相空間及上述處理裝置之外部空間的排氣管中至少一者,於上述處理裝置之本體及上述電極或上述排氣管之外部設置有支持上述處理裝置、並將熱自上述高溫區域向上述低溫區域傳導之傳熱介質,並且上述傳熱介質之傳熱量係以使上述電極或上述排氣管之至少任一者為原因而產生之上述低溫區域與上述高溫區域之溫度差減小之方式調整。 A method for producing a glass substrate, wherein the processing device is configured to treat a molten glass having a gas phase space formed by an inner wall and a molten glass surface, and at least the inner wall in contact with the gas phase space a part is composed of a material containing a platinum group metal, and when the molten glass is treated in the processing apparatus, a high temperature region is formed on the inner wall in contact with the gas phase space, and the temperature is lower than the high temperature region. In the low temperature region, the processing device is provided with at least one of an electrode for electrically heating the main body of the processing device or an exhaust pipe connecting the gas phase space and an outer space of the processing device, and the body of the processing device a heat transfer medium supporting the processing device and conducting heat from the high temperature region to the low temperature region is disposed outside the electrode or the exhaust pipe, and the heat transfer amount of the heat transfer medium is such that the electrode or the exhaust pipe At least one of them is adjusted in such a manner that the temperature difference between the low temperature region and the high temperature region is reduced. 如請求項1至3中任一項之玻璃基板之製造方法,其中以使上述高溫區域與上述低溫區域之溫度差成為200℃以下之方式調整上述傳熱介質之傳熱量。 The method for producing a glass substrate according to any one of claims 1 to 3, wherein the heat transfer amount of the heat transfer medium is adjusted so that a temperature difference between the high temperature region and the low temperature region is 200 ° C or lower. 如請求項1至3中任一項之玻璃基板之製造方法,其中上述處理裝置及上述傳熱介質被耐火絕熱磚覆蓋,上述傳熱介質係導熱率比上述耐火絕熱磚高之耐火磚,且上述傳熱介質之傳熱量係使用上述傳熱介質之導熱率及配置之任一者來調整。 The method for producing a glass substrate according to any one of claims 1 to 3, wherein the processing device and the heat transfer medium are covered by a refractory insulating brick, wherein the heat transfer medium is a refractory brick having a higher thermal conductivity than the refractory insulating brick, and The amount of heat transfer of the heat transfer medium is adjusted using either of the heat transfer rates and the arrangement of the heat transfer medium. 如請求項1至3中任一項之玻璃基板之製造方法,其中上述傳熱介質之傳熱量係使用電腦模擬來決定。 The method for producing a glass substrate according to any one of claims 1 to 3, wherein the heat transfer amount of the heat transfer medium is determined by computer simulation. 如請求項1至3中任一項之玻璃基板之製造方法,其中上述處理裝置包括使熔融玻璃澄清之澄清裝置,上述傳熱介質抵接於上述澄清裝置之高溫區域及低溫區域,且藉由調整上述傳熱介質之傳熱量而調整上述澄清裝置之高溫區域與低溫區域之溫度差。 The method for producing a glass substrate according to any one of claims 1 to 3, wherein the processing device comprises a clarification device for clarifying the molten glass, wherein the heat transfer medium abuts between a high temperature region and a low temperature region of the clarification device, and The heat transfer amount of the heat transfer medium is adjusted to adjust the temperature difference between the high temperature region and the low temperature region of the clarification device. 一種玻璃基板製造裝置,其包括處理裝置及傳熱介質;上述處理裝置係具有由內壁與熔融玻璃表面形成之氣相空間,且與上述氣相空間接觸之上述內壁之至少一部分由包含鉑族金屬之材料構成者,並且設置有:本體,於對熔融玻璃進行處理時,於與上述氣相空間接觸之內壁形成高溫區域以及溫度比上述高溫區域低之低溫區域,及用以對上述處理裝置之本體通電加熱的電極、或連通上述氣相空間及上述處理裝置之外部空間的排氣管中至少一者;上述傳熱介質設置於上述處理裝置之本體及上述電極或上述排氣管之外部,支持上述處理裝置,並將熱自上述高溫區域向上述低溫區域傳導,且傳熱量係以使上述電極或上述排氣管中至少一者為原因而產生之上述低溫區域與上述高溫區域之溫度差成為基準值以下之方式調整。 A glass substrate manufacturing apparatus comprising: a processing device and a heat transfer medium; the processing device having a gas phase space formed by an inner wall and a surface of the molten glass, and at least a portion of the inner wall contacting the gas phase space is composed of platinum a material of a group metal, and is provided with a body for forming a high temperature region on the inner wall in contact with the gas phase space and a low temperature region having a temperature lower than the high temperature region when the molten glass is processed, and At least one of an electrode electrically heated by the main body of the processing device or an exhaust pipe communicating with the gas phase space and an outer space of the processing device; the heat transfer medium being disposed on the body of the processing device and the electrode or the exhaust pipe Externally, the processing device is supported, and heat is conducted from the high temperature region to the low temperature region, and the heat transfer amount is the low temperature region and the high temperature region generated by causing at least one of the electrode or the exhaust pipe The temperature difference is adjusted so as to be equal to or less than the reference value. 一種玻璃基板製造裝置,其包括處理裝置及傳熱介質;上述處理裝置係具有由內壁與熔融玻璃液面形成之氣相空間,且與上述氣相空間接觸之上述內壁之至少一部分由包含鉑族金屬之材料構成者,並且設置有:本體,於對熔融玻璃進行處理時,於與上述氣相空間接觸之內壁形成高溫區域與溫度比上述高溫區域低之低溫區域,及用以對上述處理裝置之本體通電加熱的電極、或連通上述氣相空間及上述處理裝置之外部空間的排氣管中至少一者;上述傳熱介質設置於上述處理裝置之本體及上述電極或上述排氣管之外部,支持上述處理裝置,並將熱自上述高溫區域向上述低溫區域傳導,且傳熱量係以使上述電極或上述排氣管之至少任一者為原因而產生之上述低溫區域與上述高溫區域之溫度差減小之方式調整。 A glass substrate manufacturing apparatus comprising: a processing device and a heat transfer medium; wherein the processing device has a gas phase space formed by an inner wall and a molten glass surface, and at least a portion of the inner wall in contact with the gas phase space is included a material of a platinum group metal, and is provided with a body for forming a high temperature region on the inner wall in contact with the gas phase space and a low temperature region having a temperature lower than the high temperature region when the molten glass is processed, and At least one of an electrode that is electrically heated by the body of the processing device or an exhaust pipe that communicates between the gas phase space and an outer space of the processing device; the heat transfer medium is disposed on a body of the processing device and the electrode or the exhaust gas The outside of the tube supports the processing device, and conducts heat from the high temperature region to the low temperature region, and the heat transfer amount is the low temperature region generated by causing at least one of the electrode or the exhaust pipe The temperature difference in the high temperature region is adjusted in such a manner as to decrease.
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