TW201429000A - 光電半導體晶片及光電半導體晶片之製造方法 - Google Patents
光電半導體晶片及光電半導體晶片之製造方法 Download PDFInfo
- Publication number
- TW201429000A TW201429000A TW102140495A TW102140495A TW201429000A TW 201429000 A TW201429000 A TW 201429000A TW 102140495 A TW102140495 A TW 102140495A TW 102140495 A TW102140495 A TW 102140495A TW 201429000 A TW201429000 A TW 201429000A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- electrode
- region
- silver
- electrical contact
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 156
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 115
- 229910052709 silver Inorganic materials 0.000 claims abstract description 115
- 239000004332 silver Substances 0.000 claims abstract description 115
- 239000010410 layer Substances 0.000 claims description 398
- 238000002955 isolation Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 238000009826 distribution Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 230000001737 promoting effect Effects 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 36
- 230000005855 radiation Effects 0.000 description 17
- 238000005530 etching Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
Landscapes
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012110775.0A DE102012110775A1 (de) | 2012-11-09 | 2012-11-09 | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201429000A true TW201429000A (zh) | 2014-07-16 |
Family
ID=49551605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102140495A TW201429000A (zh) | 2012-11-09 | 2013-11-07 | 光電半導體晶片及光電半導體晶片之製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE102012110775A1 (fr) |
| TW (1) | TW201429000A (fr) |
| WO (1) | WO2014072410A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014107123A1 (de) | 2014-05-20 | 2015-11-26 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips sowie optoelektronischer Halbleiterchip |
| DE102015108532A1 (de) * | 2015-05-29 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte |
| DE102015108545A1 (de) | 2015-05-29 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| DE102007062046B4 (de) * | 2007-12-21 | 2023-09-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lichtemittierende Bauelementeanordnung, lichtemittierendes Bauelement sowie Verfahren zum Herstellen einer Mehrzahl von lichtemittierenden Bauelementen |
| DE102008011848A1 (de) * | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| US20100295088A1 (en) * | 2008-10-02 | 2010-11-25 | Soraa, Inc. | Textured-surface light emitting diode and method of manufacture |
| US8008683B2 (en) * | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
| DE202009017981U1 (de) * | 2009-02-25 | 2010-10-14 | Samsung Electro-Mechanics Co., Ltd., Suwon | Halbleiter-Lichtemissionsvorrichtung und Halbleiter-Lichtemissionsvorrichtungs-Baugruppe, die diese verwendet |
| DE102010009717A1 (de) * | 2010-03-01 | 2011-09-01 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| DE102010013494A1 (de) | 2010-03-31 | 2011-10-06 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102010048159B4 (de) * | 2010-10-11 | 2023-10-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip |
| DE102011016302B4 (de) * | 2011-04-07 | 2026-01-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
-
2012
- 2012-11-09 DE DE102012110775.0A patent/DE102012110775A1/de not_active Withdrawn
-
2013
- 2013-11-07 WO PCT/EP2013/073277 patent/WO2014072410A1/fr not_active Ceased
- 2013-11-07 TW TW102140495A patent/TW201429000A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE102012110775A1 (de) | 2014-05-15 |
| WO2014072410A1 (fr) | 2014-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI524550B (zh) | 用於製造光電半導體晶片之方法及光電半導體晶片 | |
| KR101874587B1 (ko) | 반도체 발광소자 및 이의 제조방법 | |
| JP5883118B2 (ja) | オプトエレクトロニクス半導体チップ | |
| CN108963051B (zh) | 发光二极管封装件 | |
| US8766305B2 (en) | Semiconductor light emitting device and method of fabricating semiconductor light emitting device | |
| US9324917B2 (en) | Semiconductor light emitting device | |
| JP6100598B2 (ja) | 半導体発光素子及び半導体発光装置 | |
| TWI472063B (zh) | 發光二極體晶片 | |
| CN105308762B (zh) | 利用ald层封装的光电子半导体芯片和相应的制造方法 | |
| US6727167B2 (en) | Method of making an aligned electrode on a semiconductor structure | |
| JP4970739B2 (ja) | 複数の電流拡張層を有するオプトエレクトロニクス素子およびその製造方法 | |
| KR102255305B1 (ko) | 수직형 반도체 발광소자 및 그 제조 방법 | |
| US10014444B2 (en) | Optoelectronic semiconductor chip | |
| TW201429000A (zh) | 光電半導體晶片及光電半導體晶片之製造方法 | |
| TW201236195A (en) | Optoelectronic semiconductor chip | |
| US20190165216A1 (en) | Ultraviolet light emitting device package | |
| CN103477453B (zh) | 用于制造半导体本体的方法 | |
| US10497834B2 (en) | Light-emitting device with increased light output and reduced operating voltage and having a through hole for an electrode | |
| CN101656283A (zh) | 发光二极管组件及其制造方法 | |
| KR20150052513A (ko) | 발광 소자 및 그 제조 방법 | |
| KR20130055999A (ko) | 발광 다이오드 및 그 제조 방법 | |
| KR20110125363A (ko) | 3족 질화물 반도체 발광소자 | |
| US10629779B2 (en) | Light-emitting diode | |
| KR100735490B1 (ko) | 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법 | |
| KR20130067014A (ko) | 발광 다이오드 |