TW201327028A - Mask production method for maximizing the number of chips on a wafer - Google Patents
Mask production method for maximizing the number of chips on a wafer Download PDFInfo
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- TW201327028A TW201327028A TW101138537A TW101138537A TW201327028A TW 201327028 A TW201327028 A TW 201327028A TW 101138537 A TW101138537 A TW 101138537A TW 101138537 A TW101138537 A TW 101138537A TW 201327028 A TW201327028 A TW 201327028A
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- scribe line
- test pattern
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- alignment mark
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000012360 testing method Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
本發明關於半導體晶片製造領域,特別是關於一種使晶圓上晶片數量最大化的光罩製作方法。 The present invention relates to the field of semiconductor wafer fabrication, and more particularly to a method of fabricating a mask that maximizes the number of wafers on a wafer.
隨著電子化產品的普及與市場的競爭,不管是IC設計公司或是晶圓代工廠,無不想盡辦法使同一片晶圓上的晶片(Chip)數量最大化。因此晶圓上切割道(scriber line)的寬度縮小更是各廠家努力的目標。根據經驗,若減少10um的切割道寬度,晶片數量便會增加1~2%,單一晶片的成本因此而降低。 With the popularity of electronic products and competition in the market, no matter whether it is an IC design company or a foundry, there is no way to maximize the number of chips on the same wafer. Therefore, the narrowing of the width of the scriber line on the wafer is a goal of various manufacturers. According to experience, if the scribe line width of 10um is reduced, the number of wafers will increase by 1~2%, and the cost of a single wafer will be reduced.
但是,由於晶圓代工廠因生產工藝的需要,往往需要在切割道放置測試圖案(Testing Pattern)或對準標記(Align.Mark),而且因機台限制,測試圖案或對準標記不可能無限縮小。 However, due to the needs of the production process, the wafer foundry often needs to place a testing pattern or alignment mark (Align.Mark) on the cutting path, and the test pattern or alignment mark cannot be infinite due to the limitation of the machine. Zoom out.
因此,如何能更進一步地減少切割道寬度,增加一片晶圓上的裸片總量,是目前亟需解決的問題。 Therefore, how to further reduce the width of the scribe line and increase the total amount of dies on a wafer is an urgent problem to be solved.
針對現有技術中存在的缺陷和不足,本發明的目的是使晶圓上晶片數量最大化的光罩製作方法,既可以保留必需的測試圖案或對準標記,又可實現切割道縮小的目的。 In view of the defects and deficiencies existing in the prior art, the object of the present invention is to make a reticle manufacturing method for maximizing the number of wafers on a wafer, which can retain the necessary test patterns or alignment marks and achieve the purpose of reducing the scribe lines.
為了達到上述目的,本發明提出一種使晶圓上晶片數量最大化的光罩製作方法,該方法包括:製作光罩上的切割道時採用多重切割道寬度。 In order to achieve the above object, the present invention provides a reticle fabrication method for maximizing the number of wafers on a wafer, the method comprising: using a plurality of scribe line widths when making a scribe line on the reticle.
作為上述技術方案的優選,需要放置測試圖案或對準標記的切割道的寬度較寬,不需要放置測試圖案或對準標記的切割道 的寬度較窄。 As a preferred embodiment of the above technical solution, the width of the scribe line where the test pattern or the alignment mark is to be placed is wide, and the scribe line where the test pattern or the alignment mark is not required is not required. The width is narrower.
作為上述技術方案的優選,需要放置測試圖案或對準標記的切割道的寬度為標準切割道寬度,不需要放置測試圖案或對準標記的切割道的寬度小於標準切割道寬度。 As a preferred aspect of the above technical solution, the width of the scribe line where the test pattern or the alignment mark is to be placed is the standard scribe line width, and the width of the scribe line where the test pattern or the alignment mark is not required to be placed is smaller than the standard scribe line width.
作為上述技術方案的優選,不需要放置測試圖案或對準標記的切割道的寬度為滿足切割的最小寬度。 As a preferred aspect of the above technical solution, the width of the scribe line where the test pattern or the alignment mark is not required to be placed is such that the minimum width of the cut is satisfied.
本發明提出的光罩製作方法光罩的切割道採用多重切割道寬度的設計,此方法既可滿足測試切割的需求,亦可滿足裸片總量(Gross die)的增加以及即時出貨給客戶的需求。 The reticle of the reticle of the invention adopts the design of multiple scribe line widths, which can meet the requirements of test cutting, and can also meet the increase of the total die (Gross die) and the immediate shipment to the customer. Demand.
下面結合附圖,對本發明的具體實施方式作進一步的詳細說明。對於所屬技術領域的技術人員而言,從對本發明的詳細說明中,本發明的上述和其他目的、特徵和優點將顯而易見。 The specific embodiments of the present invention are further described in detail below with reference to the accompanying drawings. The above and other objects, features and advantages of the present invention will become apparent to those skilled in
傳統光罩製作時,採用相同的切割寬度,如圖1所示,A1、A2、A3為標準的切割道寬度,而其中部分切割道並沒有擺放任何測試圖案。而且,現今科技發達,裸片的尺寸(Die Size)也可以設計的更小,所以切割也無形地變成浪費空間影響裸片總量(Gross Die)的問題。 In the traditional mask production, the same cutting width is used. As shown in Fig. 1, A1, A2, and A3 are standard cutting lane widths, and some of the cutting lanes are not placed with any test pattern. Moreover, today's technology is developed, and the Die size can be designed to be smaller, so cutting also invisibly becomes a waste of space affecting the Gross Die.
本發明提出一種使晶圓上晶片數量最大化的光罩製作方法,是在製作光罩時,其上的切割道採用多重切割道寬度。 The present invention proposes a method of fabricating a reticle that maximizes the number of wafers on a wafer, wherein the scriber is formed with multiple scribe lane widths when the reticle is fabricated.
具體地,需要放置測試圖案或對準標記的切割道的寬度較寬,而不需要放置測試圖案或對準標記的切割道的寬度較窄。 Specifically, the width of the scribe line where the test pattern or the alignment mark needs to be placed is wide, and the width of the scribe line where the test pattern or the alignment mark is placed is not required to be narrow.
例如,需要放置測試圖案或對準標記的切割道的寬度為現有技術中的標準切割道寬度,而不需要放置測試圖案或對準標記 的切割道的寬度則可以小於標準切割道寬度,更優選地,不需要放置測試圖案或對準標記的切割道的寬度至需要滿足後續將晶圓切割成裸片的最小寬度即可。 For example, the width of the scribe line where the test pattern or alignment mark needs to be placed is the standard scribe line width in the prior art, without the need to place a test pattern or alignment mark The width of the scribe line can then be less than the standard scribe line width, and more preferably, the width of the scribe line where the test pattern or alignment mark is not placed needs to be sufficient to meet the minimum width for subsequent dicing of the wafer into a dies.
參見圖2和圖3,在光罩上,A4、A5使用標準切割道寬度,供擺放對準標記或測試圖案;而B1、B2、B3、B4可擺放較小的切割道寬度只要滿足後段切割廠需求即可。後續的光罩製作及晶圓生產與現有技術無異。然後將實際擺放光罩的平面佈置圖(Floor Plan)提供給測試及切割廠,以利製作相關測試及切割機台設置。 Referring to Figures 2 and 3, on the reticle, A4 and A5 use standard scribe line width for placement of alignment marks or test patterns; while B1, B2, B3, and B4 can be placed with smaller scribe line widths as long as they are satisfied. The rear cutting plant can be used. Subsequent reticle fabrication and wafer fabrication are no different than existing technologies. The Floor Plan, which actually places the reticle, is then provided to the test and cutting plant to facilitate the fabrication of the test and cutting machine settings.
雖然,本發明已通過以上實施例及其附圖而清楚說明,然而在不背離本發明精神及其實質的情況下,所屬技術領域的技術人員當可根據本發明作出各種相應的變化和修正,但這些相應的變化和修正都應屬於本發明的權利要求的保護範圍。 Although the present invention has been clearly described by the above embodiments and the accompanying drawings, various modifications and changes can be made in accordance with the present invention without departing from the spirit and scope of the invention. However, such corresponding changes and modifications are intended to fall within the scope of the appended claims.
圖1為現有技術中光罩的切割道寬度示意圖;圖2根據本發明的光罩製作方法製作的第一光罩的切割道寬度示意圖;圖3根據本發明的光罩製作方法製作的第二光罩的切割道寬度示意圖。 1 is a schematic view showing a width of a dicing street of a reticle in the prior art; FIG. 2 is a schematic view showing a width of a dicing street of a first reticle produced by the reticle manufacturing method of the present invention; and FIG. 3 is a second embodiment of the reticle manufacturing method according to the present invention. Schematic diagram of the width of the dicing channel.
Claims (4)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104419627A CN103176350A (en) | 2011-12-26 | 2011-12-26 | Mask fabricating method for maximizing quantity of chips on wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201327028A true TW201327028A (en) | 2013-07-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101138537A TW201327028A (en) | 2011-12-26 | 2012-10-19 | Mask production method for maximizing the number of chips on a wafer |
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| CN (1) | CN103176350A (en) |
| TW (1) | TW201327028A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI714865B (en) * | 2017-06-28 | 2021-01-01 | 矽創電子股份有限公司 | Wafer structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116068844B (en) * | 2023-03-10 | 2023-07-07 | 合肥晶合集成电路股份有限公司 | Mask plate and preparation method of wafer |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0721624B2 (en) * | 1988-11-08 | 1995-03-08 | 日本電気株式会社 | Reticle for semiconductor integrated circuit |
| JPH0318012A (en) * | 1989-06-14 | 1991-01-25 | Matsushita Electron Corp | Reticle for reducing-projection exposure apparatus |
| JP2002023344A (en) * | 2000-07-05 | 2002-01-23 | Seiko Epson Corp | Scribe line arrangement method, reticle and exposure method |
| JP2005283609A (en) * | 2004-03-26 | 2005-10-13 | Sharp Corp | Reticle for reduction projection exposure equipment |
| JP2009216844A (en) * | 2008-03-10 | 2009-09-24 | Seiko Instruments Inc | Reticle for reduction projection exposure apparatus and exposure method using the same |
| CN101750899B (en) * | 2008-12-04 | 2011-06-22 | 上海华虹Nec电子有限公司 | Lithography layout and method for measuring lithography deformation thereof |
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2011
- 2011-12-26 CN CN2011104419627A patent/CN103176350A/en active Pending
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- 2012-10-19 TW TW101138537A patent/TW201327028A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI714865B (en) * | 2017-06-28 | 2021-01-01 | 矽創電子股份有限公司 | Wafer structure |
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| CN103176350A (en) | 2013-06-26 |
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