[go: up one dir, main page]

TW201206987A - Composite and display device that contains same - Google Patents

Composite and display device that contains same Download PDF

Info

Publication number
TW201206987A
TW201206987A TW100124200A TW100124200A TW201206987A TW 201206987 A TW201206987 A TW 201206987A TW 100124200 A TW100124200 A TW 100124200A TW 100124200 A TW100124200 A TW 100124200A TW 201206987 A TW201206987 A TW 201206987A
Authority
TW
Taiwan
Prior art keywords
substrate
group
film
polymer
transparent conductive
Prior art date
Application number
TW100124200A
Other languages
Chinese (zh)
Inventor
Motoki Okaniwa
Takaaki Uno
Shintaro Fujitomi
Takashi Okada
Toshihiro Otsuki
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW201206987A publication Critical patent/TW201206987A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • C08G65/38Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
    • C08G65/40Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group
    • C08G65/4006(I) or (II) containing elements other than carbon, oxygen, hydrogen or halogen as leaving group (X)
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2371/00Characterised by the use of polyethers obtained by reactions forming an ether link in the main chain; Derivatives of such polymers
    • C08J2371/08Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C08J2371/10Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2371/00Characterised by the use of polyethers obtained by reactions forming an ether link in the main chain; Derivatives of such polymers
    • C08J2371/08Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C08J2371/14Furfuryl alcohol polymers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Laminated Bodies (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Polyethers (AREA)

Abstract

The disclosed composite has a substrate that contains an aromatic polyether polymer with a glass transition temperature (Tg) of 230-350 DEG C, as measured by differential scanning calorimetry (DSC, rate of increase of 20 DEG C/min), and at least one type of member selected from a group consisting of a transparent conductive film formed on at least one surface of the substrate, a coloured portion and a switching element.

Description

201206987 六、發明說明 【發明所屬之技術領域】 本發明係關於複合物及含其之顯示裝置。詳細而言, 係關於透明導電性薄膜、濾色器基板及開關元件基板等之 複合物以及含有該複合物之顯示裝置。 【先前技術】 近年來,觸控面板等中係使用於基材上形成有透明導 電膜之透明導電性構件。又,液晶顯示器等之顯示裝置 中,爲了實現全彩化之目的等,則係使用於基材上形成有 著色部之濾色器基板,且因可實現高對比等,而使用於基 材上形成有以薄膜電晶體(Thin Film Transistor)元件所代 表之3端子元件、以MIM(Metal Insulator Metal)元件所 代表之2端子元件等之開關元件的開關元件基板。 作爲此般透明導電性構件、濾色器基板及開關元件基 板之基材,以耐熱性及透光性等優良爲出發點,屹今則係 使用玻璃製之基材(專利文獻υ。 伴隨近年之觸控面板或液晶顯示器之輕量化及薄型化 等,亦要求透明導電性構件、濾色器基板或開關元件基板 之輕量化及薄型化等,但使用玻璃製之基材作爲其之基材 時,則難以輕量化及薄型化等。又,依據用途之不同,亦 有必需爲可撓性之情形。 因此,近年來除了可撓性及加工性,並由耐衝撃性優 良、輕量等之觀點,亦要求有塑膠薄膜之使用,專利文獻 -5- 201206987 2及3中揭示將聚對酞酸乙二酯薄膜或聚碳酸酯薄膜等之 各種之塑膠薄膜作成基材之透明導電性構件,而專利文獻 4中揭示使用由聚醯亞胺所構成之基材的開關元件基板。 又’專利文獻5及6中分別記載、塑膠液晶顯示元件 用基板及透明且可撓性之基板上設置透明導電膜之透明導 電性薄膜。 [先前技術文獻] [專利文獻] [專利文獻1]日本特開2010-54753號公報 [專利文獻2]日本特開2010-20473號公報 [專利文獻3]日本特開2007-308675號公報 [專利文獻4]日本特開2003- 1 68800號公報 [專利文獻5]日本特開平11 -271736號公報 [專利文獻6]日本特開201 1-003446號公報 【發明內容】 [發明所欲解決之課題] 然而,泛用透明塑膠之聚對酞酸乙二酯或聚碳酸酯, 及專利文獻5或6中記載之基板由於耐熱性低,使用此等 樹脂作爲基材,則難以於其之上形成透明導電膜、著色部 或開關元件等之構件。 又,由聚醯亞胺所構成之基材由於在分子內及分子間 因電荷移動錯合物之形成而導致著色成黃褐色,而難以使 用於必需爲高透光性之用途。並且,將聚醯亞胺成形爲薄 -6- 201206987 膜狀之基材時’由於必須以高溫進行醯亞胺化,故對製造 製程之負荷爲高。 本發明係有鑑於此般問題點所完成者,係以提供耐著 色性、透光性、耐熱性及力學性強度皆優良之複合物爲目 的。 [用以解決課題之手段] 本發明者爲了解決上述課題經過充分探討之結果,發 現由包含具有特定之玻璃轉移溫度之芳香族聚醚系聚合物 之基材所得之複合物可解決上述課題,並且發現含有該聚 合物之基材之位相差亦小一事而完成了本發明。 即’本發明爲提供以下之[1]~[11]者。 [1] 一種複合物’其係具有含有以示差掃描熱量測 定(DSC、昇溫速度2〇°C/分)所測得之玻璃轉移溫度(Tg) 爲230~3 50°C之芳香族聚醚系聚合物之基材,與形成於該 基材之至一面上之選自透明導電膜、著色部及開關元件所 成群之至少一種之構件。 [2] 如[1]之複合物,其中前述芳香族聚醚系聚合物 具有選自由下述式(1)所表示之構造單位及下述式(2)所表 示之構造單位所成群之至少一種構造單位(i)。 (1) (1)201206987 【化1】201206987 VI. Description of the Invention [Technical Field of the Invention] The present invention relates to a composite and a display device therewith. More specifically, it relates to a composite of a transparent conductive film, a color filter substrate, a switching element substrate, and the like, and a display device including the composite. [Prior Art] In recent years, a touch panel or the like has been used for a transparent conductive member in which a transparent conductive film is formed on a substrate. In addition, in a display device such as a liquid crystal display, a color filter substrate having a colored portion formed on a substrate is used for the purpose of full coloring, and is used for a substrate because high contrast can be achieved. A switching element substrate including a three-terminal element represented by a thin film transistor element and a switching element such as a two-terminal element represented by a MIM (Metal Insulator Metal) element is formed. As a base material of such a transparent conductive member, a color filter substrate, and a switching element substrate, it is based on the excellent heat resistance and light transmittance, and a substrate made of glass is used today (Patent Document 伴随. When the weight of the touch panel or the liquid crystal display is reduced, and the thickness of the transparent conductive member, the color filter substrate, or the switching element substrate is required to be lighter and thinner, when a glass substrate is used as the substrate thereof, In addition, it is difficult to reduce the weight and thickness, etc. It is also necessary to be flexible depending on the application. Therefore, in recent years, in addition to flexibility and workability, it is excellent in impact resistance and light weight. The use of a plastic film is also required, and a transparent conductive member in which various plastic films such as polyethylene terephthalate film or polycarbonate film are used as a substrate is disclosed in Patent Document No. 5-201206987 2 and 3. Patent Document 4 discloses a switching element substrate using a substrate made of polyimide. Further, in Patent Documents 5 and 6, the substrate for a plastic liquid crystal display element is transparent and flexible. A transparent conductive film in which a transparent conductive film is provided on a substrate. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2010-54753 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2010-20473 Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. [Invention] [Problems to be Solved by the Invention] However, the polyethylene terephthalate or polycarbonate which is a general-purpose transparent plastic, and the substrate described in Patent Document 5 or 6 have low heat resistance, and are used. When a resin is used as the substrate, it is difficult to form a transparent conductive film, a colored portion, or a member such as a switching element thereon. Further, the substrate composed of polyimine is misaligned by intramolecular and intramolecular charges due to charge. The formation of the object results in coloration to a yellow-brown color, and is difficult to use for applications that are required to have high light transmittance. Moreover, when the polyimide is formed into a thin film of -6-201206987 film, it is necessary to carry out high temperature. Imine, so on manufacturing The load of the process is high. The present invention has been made in view of the above problems, and aims to provide a composite excellent in coloring resistance, light transmittance, heat resistance and mechanical strength. In order to solve the above problems, the inventors of the present invention have found that a composite obtained from a substrate containing an aromatic polyether polymer having a specific glass transition temperature can solve the above problems and find that the polymer is contained. The present invention has been completed by the fact that the phase difference of the substrate is also small. That is, the present invention provides the following [1] to [11]. [1] A composite having a differential scanning calorimetry (DSC) a heating temperature of 2 〇 ° C / min) measured glass transition temperature (Tg) of 230 ~ 3 50 ° C of aromatic polyether polymer substrate, and formed on the substrate to one side A member selected from the group consisting of a transparent conductive film, a colored portion, and a switching element. [2] The composite according to [1], wherein the aromatic polyether polymer has a group selected from the structural unit represented by the following formula (1) and the structural unit represented by the following formula (2). At least one structural unit (i). (1) (1)201206987 [Chemical 1]

(式(1)中,R~R各自獨立袠示碳數1〜12之丄價之有機 基’ a〜d各自獨立表示〇〜4之整數。) 【化2】(In the formula (1), R to R each independently represent an organic group in which the carbon number of the carbon number is 1 to 12, and a to d each independently represent an integer of 〇 to 4).

(式(2)中,RLR4及a〜d係各自獨立與前述式(1)中之 R1〜R4及a~d相同意義’ Y表示單鍵、-S02-或〉C=〇’ R7及R8各自獨立表示鹵素原子、碳數1〜12之1價之有 機基或硝基,g及h各自獨立表示〇~4之整數,m表示〇 或1。但,m爲〇時’ r7不爲氰基。) [3]如[丨]或[2]之複合物,其中前述芳香族聚醚系聚 合物更具有選自由下述式(3)所表不之構造單位及下述式 ⑷所表示之構造單位所成群之至少—種構造單位⑴)。 201206987(In the formula (2), RLR4 and a to d are each independently the same as R1 to R4 and a~d in the above formula (1). Y represents a single bond, -S02- or >C=〇' R7 and R8 Each of them independently represents a halogen atom, an organic group or a nitro group having a carbon number of 1 to 12, and g and h each independently represent an integer of 〇~4, and m represents 〇 or 1. However, when m is 〇, r7 is not cyanide. [3] The composite of [丨] or [2], wherein the aromatic polyether-based polymer further has a structural unit selected from the group consisting of the following formula (3) and represented by the following formula (4) At least the structural unit (1) of the group of structural units. 201206987

(式(3)中,R5及r6各自獨立表示碳數1~12之1價之有機 基,Z 表示單鍵、_0 -、-S __ s 0 2 -、〉c = 0、_ C ο Ν Η -、_ coo-或碳數U2之2價之有機基’ 6及f各自獨立表示 〇〜4之整數,n表示〇或1。) 化4】 .0¾(In the formula (3), R5 and r6 each independently represent a monovalent organic group having a carbon number of 1 to 12, and Z represents a single bond, _0 -, -S __ s 0 2 -, >c = 0, _C ο Ν Η -, _ coo- or the two-valent organic group of carbon number U2 '6 and f each independently represent an integer of 〇~4, and n represents 〇 or 1.) 4] .03⁄4

ZZ

(R7)c ⑷ (式(4)中,R7、R.、Y、m、g及h係各自獨从與前述式(2) 中之 R7、R8、Y、m、g & h 相同意義,R5、R6、Z、n、e 及f係各自獨立與前述式中之r5、R6、Z、n、e及f相 同意義。) [4]如[3]之複合物’其中前述芳香族聚醚系聚合物 中,上述構造單位⑴與上述構造單位(ϋ)之莫耳比爲50: 50-100 : 0 ° [5] 如[1]~[4]中任一項之複合物’其中前述芳香族 聚醚系聚合物之以凝膠滲透層析法(GPC)所得之聚苯乙烯 換算之重量平均分子量爲5,000〜500,000。 [6] 如[1]〜[5]中任一項之複合物,其中前述基材之 厚度於30μιη時之由JIS K7105透明度試驗法所測得之全 201206987 光線穿透率爲85%以上。 [7] 如[1]〜[6]中任一項之複合物,其中前述基材之 厚度於30μιη時之YI値(黃色指數)爲3.0以下。 [8] 如[1]~[7]中任一項之複合物,其中前述基材之 厚度於30μιη時之厚度方向之位相差(Rth)爲200nm以 下。 [9] 如[1]~[8]中任一項之複合物,其中前述構件爲 透明導電膜,而前述基材或透明導電膜之至少一面係具備 偏光板而成。 [10] —種顯示裝置,其係含有如[1]〜[9]中任一項之 複合物。 [11] —種觸控面板,其係含有如[1]〜[9]中任一項之 複合物。 [發明之效果] 本發明之複合物,其透光性、耐熱性、耐熱著色性及 力學性強度皆優良,且於厚度方向之位相差爲小。因此, 本發明之複合物係容易製造者,且可適宜使用作爲顯示裝 置用及觸控面板用。 【實施方式】 <<複合物>> 本發明之複合物係具有含有以示差掃描熱量測定 (DSC、昇溫速度20°C/分)所測得之玻璃轉移溫度(Tg)爲 -10- 201206987 230~3 50°C之芳香族聚醚系聚合物(以下亦稱爲「聚合物 (I)」)之基材’與形成於該基材之至一面上之選自由透明 導電膜、著色部及開關兀件所成群之至少一種構件。 尙且,「芳香族聚醚系聚合物」係指藉由在主鏈形成 醚基之反應所得之聚合物。 <基材> 〔聚合物(I)〕 本發明所使用之基材包含前述聚合物(I)。 前述聚合物⑴之玻璃轉移溫度較佳爲240〜3 3 0°C,更 佳爲250〜300 °C。 將透明導電膜、著色部或開關元件等之構件形成於基 材上之步驟,通常係在200 °C以上之高溫下進行。因此, 爲了可耐受此高溫,具體而言,由於基材可能會在Tg負 2 0〜3 0°C下引起由動態黏彈性測定(Vibron公司製)測得之 彈性模數變化,故要求使用之基材中所含有之聚合物通常 具有比加熱溫度還高20°C以上之Tg(以DSC測定)。而形 成前述構件之基材被要求有至少230 °C以上之耐熱性,並 要求較佳爲230〜350°C、更佳爲240〜33(TC、更較佳爲 2 5 0〜3 0 0 °C之耐熱性。因此,基材中所含之聚合物之玻璃 轉移溫度亦以於此之範圍爲佳。 前述聚合物(I)由於其Tg在前述範圍,故可適宜使用 作爲形成透明導電膜、著色部或開關元件等之構件之基材 材料。藉由使用由前述聚合物(I)所形成之基材,於此之 基材上形成構件時,因可在高溫下進行處理,而可得到低 -11 - 201206987 電阻及可高速處理(產量向上)之複合物。 含有此般聚合物(I)而成之基材,由於其透光性、耐 熱性、耐熱著色性及力學性強度皆平衡性地優良,而可適 宜使用作爲透明導電性薄膜、濾色器基板及開關元件基板 等之複合物(光學零件)。又,由於基材含有具有前述特性 之聚合物(I),於該基材之至少一面形成選自由透明導電 膜、著色部及開關元件所成群之至少一種之構件時,並 且,依據希望而設置於著色部等之上之由透明樹脂所構成 之保護膜或形成透明導電膜時之加熱或熱處理由於可在高 溫下進行,故不受到此等形成方法所限制,而可容易地製 造複合物。又,含有前述聚合物(I)之基材在構件之形成 時及長期之使用環境下不易著色。因此,特別可使具有高 電特性及高信賴性之透明導電性薄膜之製造、具有高對比 及高精細度之濾色器基板之製造、具有高解像度、極細階 調表現、高對比及高精細度之開關元件基板之製造成爲可 能。 尙且,本發明中,「耐熱著色性」係指曝露於高溫時 之耐著色性,例如,大氣中在高溫(2 3 0°c )下進行1小時程 度之熱處理時之不易著色程度。 前述聚合物(I)係以具有選自由下述式(1)所表示之構 造單位(以下亦稱爲「構造單位(1)」)及下述式(2)所表示 之構造單位(以下亦稱爲「構造單位(2)」)所成群之至少一 種構造單位(i)之聚合物(以下亦稱爲「聚合物(II)」)爲 佳。聚合物藉由具有構成單位(i)’可得到玻璃轉移溫度在 -12- 201206987 前述範圍內之芳香族聚醚系聚合物。此般聚合物(II)由於 透明性與耐熱著色性皆優,故含該聚合物而成之基材在複 合物之製造時及長期之使用環境下,透光性高且耐熱著色 性優良。含有聚合物(Π)而成之基材由於平衡地具有此等 優良性質,故可適宜使用於透明導電性薄膜、觸控面板、 濾色器基板及開關元件基板等。 【化5】(R7)c (4) (In the formula (4), each of R7, R., Y, m, g, and h has the same meaning as R7, R8, Y, m, g & h in the above formula (2) R5, R6, Z, n, e and f are each independently equivalent to r5, R6, Z, n, e and f in the above formula.) [4] The complex of [3] wherein the aforementioned aromatic In the polyether polymer, the molar ratio of the above structural unit (1) to the above structural unit (ϋ) is 50: 50-100 : 0 ° [5] The composite of any one of [1] to [4] The polystyrene-equivalent weight average molecular weight of the aromatic polyether polymer obtained by gel permeation chromatography (GPC) is 5,000 to 500,000. [6] The composite according to any one of [1] to [5] wherein, when the thickness of the substrate is 30 μm, the light transmittance of the entire 201206987 measured by the JIS K7105 transparency test method is 85% or more. [7] The composite according to any one of [1] to [6] wherein the substrate has a YI 値 (yellow index) of 3.0 or less at a thickness of 30 μm. [8] The composite according to any one of [1] to [7], wherein a phase difference (Rth) in a thickness direction of the substrate at a thickness of 30 μm is 200 nm or less. [9] The composite according to any one of [1] to [8] wherein the member is a transparent conductive film, and at least one surface of the substrate or the transparent conductive film is provided with a polarizing plate. [10] A display device comprising the composite according to any one of [1] to [9]. [11] A touch panel comprising the composite according to any one of [1] to [9]. [Effects of the Invention] The composite of the present invention is excellent in light transmittance, heat resistance, heat resistance colorability, and mechanical strength, and has a small phase difference in the thickness direction. Therefore, the composite of the present invention is easy to manufacture, and can be suitably used as a display device and a touch panel. [Embodiment] <<Complex>> The composite of the present invention has a glass transition temperature (Tg) measured by differential scanning calorimetry (DSC, temperature increase rate of 20 ° C / min) - 10-201206987 230~3 The base material of the aromatic polyether polymer (hereinafter also referred to as "polymer (I)") at 50 ° C and the one side formed on the substrate are selected from a transparent conductive film. At least one component of the group of the coloring portion and the switch member. Further, the "aromatic polyether polymer" means a polymer obtained by a reaction of forming an ether group in a main chain. <Substrate> [Polymer (I)] The substrate used in the present invention contains the above polymer (I). The glass transition temperature of the above polymer (1) is preferably from 240 to 3,300 ° C, more preferably from 250 to 300 ° C. The step of forming a member such as a transparent conductive film, a colored portion or a switching element on a substrate is usually carried out at a high temperature of 200 ° C or higher. Therefore, in order to withstand this high temperature, in particular, since the substrate may cause a change in the elastic modulus measured by dynamic viscoelasticity measurement (manufactured by Vibron) at a Tg minus 20 to 30 ° C, it is required The polymer contained in the substrate to be used usually has a Tg (measured by DSC) which is higher than the heating temperature by 20 ° C or higher. The substrate forming the above member is required to have heat resistance of at least 230 ° C or more, and is preferably 230 to 350 ° C, more preferably 240 to 33 (TC, more preferably 2 5 0 to 3 0 0). The heat resistance of ° C. Therefore, the glass transition temperature of the polymer contained in the substrate is preferably in this range. The polymer (I) is suitably used as a transparent conductive material because its Tg is in the above range. A substrate material of a member such as a film, a colored portion, or a switching element, by using a substrate formed of the above polymer (I), when a member is formed on the substrate, since it can be processed at a high temperature, A composite of low -11 - 201206987 resistance and high-speed processing (upward yield) is available. The substrate containing the polymer (I) is light-transmitting, heat-resistant, heat-resistant, and mechanically strong. All of them are excellent in balance, and a composite (optical part) such as a transparent conductive film, a color filter substrate, and a switching element substrate can be suitably used. Further, since the substrate contains the polymer (I) having the aforementioned characteristics, At least one side of the substrate is formed selected from When a member of at least one of the group of the conductive film, the colored portion, and the switching element is formed, and a protective film made of a transparent resin or a transparent conductive film is formed on the colored portion or the like as desired, heating or heat treatment is performed. Since it can be carried out at a high temperature, the composite can be easily produced without being restricted by such a formation method. Further, the substrate containing the polymer (I) is not easily colored at the time of forming a member and in a long-term use environment. Therefore, in particular, the manufacture of a transparent conductive film having high electric characteristics and high reliability, the manufacture of a color filter substrate having high contrast and high definition, high resolution, extremely fine tone performance, high contrast and high can be achieved. In the present invention, the term "heat-resistant coloring property" means the coloring resistance when exposed to a high temperature, for example, at a high temperature (2 3 0 ° C) in the atmosphere. The polymer (I) has a structural unit selected from the following formula (1) (hereinafter also referred to as "structural sheet"). At least one structural unit (i) of a group of structural units represented by the following formula (2) and a structural unit represented by the following formula (2) (hereinafter also referred to as "structural unit (2)") (hereinafter also referred to as "Polymer (II)") is preferred. The polymer has an aromatic polyether polymer having a glass transition temperature of from -12 to 201206987 by having a constituent unit (i)'. ) Since both the transparency and the heat-resistant coloring property are excellent, the substrate containing the polymer has high light transmittance and excellent heat-resistant coloring property in the production of the composite and in a long-term use environment. Since the base material has such excellent properties in balance, it can be suitably used for a transparent conductive film, a touch panel, a color filter substrate, a switching element substrate, and the like. 【化5】

前述式(1)中,R1〜R4各自獨立表示碳數1〜12之1價 之有機基。a〜d各自獨立表示〇~4之整數,較佳爲〇或 1,更佳爲〇。 碳數1〜12之1價之有機基’可舉出碳數1~12之1價 之烴基、以及含有選自由氧原子及氮原子所成群之至少一 種之原子的碳數1〜12之1價之有機基等。 碳數1〜12之1價之烴基’可舉出碳數1〜12之直鏈或 分支鏈之烴基、碳數3~12之脂環式烴基及碳數ό〜12之芳 香族烴基等。 前述碳數1~12之直鏈或分支鏈之烴基係以碳數1~8 之直鏈或分支鍵之烴基爲佳’以碳數1〜5之直鍵或分支鍵 之烴基爲更佳 -13- 201206987 前述直鏈或分支鏈之烴基之適宜具體例, 基、乙基、η-丙基、異丙基、η-丁基、sec-丁基 基、η-戊基、η-己基及η-庚基。 前述碳數3~12之脂環式烴基係以碳數3〜8 烴基爲佳,以碳數3或4之脂環式烴基爲更佳。 碳數3〜12之脂環式烴基之適宜具體例,可 基、環丁基、環戊基及環己基等之環烷基:環丁 戊烯基及環己烯基等之環烯基。該脂環式烴基之 係在脂環上之任一碳上皆可。 前述碳數6~ 12之芳香族烴基,可舉出苯基 及萘基等。該芳香族烴基之鍵結部位係在芳香族 一碳上皆可。 含有氧原子之碳數1〜12之有機基,可由氫 原子及氧原子所構成之有機基,其中亦可較佳 基、羰基或酯鍵與烴基所構成總碳數爲 等。 具有醚基之總碳數1〜12之有機基,可舉出ί 之烷氧基、碳數2〜12之烯氧基、碳數2〜12之炔 數6〜12之芳氧基及碳數2〜12之烷氧基烷基等。 舉出甲氧基、乙氧基、丙氧基、異丙氧基、丁氧 基、丙烯氧基、環己氧基及甲氧基甲基等。 又,具有羰基之總碳數1〜12之有機基’可 2〜12之醯基等。具體地可舉出乙醯基、丙醯基 基及苄醯基等 可舉出甲 、tert-丁 之脂環式 舉出瓚丙 烯基、環 鍵結部位 、聯苯基 環上之任 原子、碳 舉出由醚 之有機基 炭數卜12 氧基、碳 具體地可 基、苯氧 舉出碳數 、異丙醯 -14- 201206987 具有酯鍵之總碳數1~12之有機基’可舉出碳數2〜12 之醯氧基等。具體地可舉出乙醯氧基、丙醯氧基、異丙醯 氧基及苄醯氧基等。 含有氮原子之碳數12之有機基’可舉出由氫原 子、碳原子及氮原子所構成之有機基’具體地可舉出氰 基、咪唑基、三唑基、苯并咪唑基及苯并三哩基等。 含有氧原子及氮原子之碳數1〜12之有機基’可舉出 由氫原子、碳原子、氧原子及氮原子所構成之有機基’具 體地可舉出噁唑基、噁二唑基、苯并噁唑基及苯并噁二唑 基等。 前述式(1)中之Ri~R4係以碳數1〜12之1價之烴基爲 佳,以碳數6~12之芳香族烴基爲較佳,以苯基爲更佳。In the above formula (1), R1 to R4 each independently represent a monovalent organic group having 1 to 12 carbon atoms. a to d each independently represent an integer of 〇~4, preferably 〇 or 1, more preferably 〇. The organic group of the valence of 1 to 12 carbon atoms may be a hydrocarbon group having a monovalent number of carbon atoms of 1 to 12 and a carbon number of 1 to 12 containing an atom selected from at least one of an oxygen atom and a nitrogen atom. One-valent organic group and the like. The hydrocarbon group having a monovalent number of carbon atoms of 1 to 12 may be a hydrocarbon group having a linear or branched chain having 1 to 12 carbon atoms, an alicyclic hydrocarbon group having 3 to 12 carbon atoms, and an aromatic hydrocarbon group having a carbon number of -12. The hydrocarbon group of the linear or branched chain having 1 to 12 carbon atoms is preferably a hydrocarbon group having a linear or branched bond having 1 to 8 carbon atoms, preferably a hydrocarbon group having a direct bond or a branched bond having 1 to 5 carbon atoms. 13-201206987 Suitable specific examples of the above-mentioned linear or branched hydrocarbon group, group, ethyl, η-propyl, isopropyl, η-butyl, sec-butyl, η-pentyl, η-hexyl and Η-heptyl. The alicyclic hydrocarbon group having 3 to 12 carbon atoms is preferably a hydrocarbon having 3 to 8 carbon atoms, more preferably an alicyclic hydrocarbon group having 3 or 4 carbon atoms. Specific examples of the alicyclic hydrocarbon group having 3 to 12 carbon atoms include a cycloalkyl group such as a cyclobutyl group, a cyclopentyl group or a cyclohexyl group: a cycloalkenyl group such as a cyclopentenyl group or a cyclohexenyl group. The alicyclic hydrocarbon group may be on any of the carbons on the alicyclic ring. Examples of the aromatic hydrocarbon group having 6 to 12 carbon atoms include a phenyl group and a naphthyl group. The bonding site of the aromatic hydrocarbon group may be on the aromatic one carbon. The organic group having an oxygen atom and having 1 to 12 carbon atoms may be an organic group composed of a hydrogen atom and an oxygen atom, and the total carbon number of the preferred group, the carbonyl group or the ester bond and the hydrocarbon group may be the same. The organic group having a total carbon number of 1 to 12 having an ether group may, for example, be an alkoxy group having 2 to 12 carbon atoms, an aryloxy group having 6 to 12 carbon atoms of 2 to 12 carbon atoms, and carbon. Alkoxyalkyl group of 2 to 12 or the like. Examples thereof include a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, a butoxy group, a propyleneoxy group, a cyclohexyloxy group, and a methoxymethyl group. Further, an organic group having a total carbon number of 1 to 12 of a carbonyl group may be a fluorenyl group of 2 to 12 or the like. Specific examples thereof include an ethyl hydrazide group, a propyl fluorenyl group, and a benzindenyl group. The alicyclic group of the methyl group and the tert-butyl group may be a fluorenyl group, a ring bond site, or an atom on the biphenyl ring. Carbon refers to an organic group based on ether, 12 oxy, carbon specifically carbonyl, phenyloxy, carbon number, isopropyl sulfonium-14-201206987, organic radical having a total carbon number of 1 to 12 with an ester bond. A decyloxy group having a carbon number of 2 to 12 or the like is given. Specific examples thereof include an ethenyloxy group, a propenyloxy group, an isopropoxycarbonyl group, and a benzamidineoxy group. The organic group having a carbon number of 12 and having a carbon atom is exemplified by an organic group composed of a hydrogen atom, a carbon atom and a nitrogen atom. Specific examples thereof include a cyano group, an imidazolyl group, a triazolyl group, a benzimidazolyl group and a benzene. And three 哩 base. The organic group having a carbon number of 1 to 12 containing an oxygen atom and a nitrogen atom is exemplified by an organic group composed of a hydrogen atom, a carbon atom, an oxygen atom and a nitrogen atom. Specifically, an oxazolyl group or an oxadiazolyl group is exemplified. , benzoxazolyl and benzooxadiazolyl and the like. In the above formula (1), Ri to R4 are preferably a hydrocarbon group having a monovalent number of carbon atoms of from 1 to 12, preferably an aromatic hydrocarbon group having from 6 to 12 carbon atoms, more preferably a phenyl group.

前述式(2)中’R1〜R4及a~d各自獨立係與前述式(1) 中之R1〜R4及a〜d相同意義,Y表示單鍵、-S〇2-或〉C = 〇,R7及R8各自獨立表示鹵素原子、碳數1〜12之1價之 有機基或硝基’ m表示〇或1。但’ m爲0時’ R7不爲氰 基。g及h各自獨立表示〇〜4之整數,較佳爲 作爲碳數1〜12之1價之有機基’可舉出與前述式(1) 中碳數1~12之1價之有機基相同之有機基等。 -15- 201206987 前述聚合物(II)中,上述構造單位(1)與上述構造單位 (2)之莫耳比(但,兩者(構造單位(1)+構造單位(2))之合計 爲1 〇〇),由光學特性、耐熱性及力學性特性之觀點,以 構造單位(1):構造單位(2) = 5 0 : 5 0〜1〇〇 : 〇爲佳,構造 單位(1):構造單位(2)=70: 30~100: 〇爲較佳,構造單 位(1):構造單位(2)= 80 : 20〜100: 〇爲更佳。 在此,力學性特性係指聚合物之拉伸強度、裂斷伸長 及拉伸彈性模數等之性質。 又,前述聚合物(Π)尙亦可具有選自由下述式(3)所表 示之構造單位及下述式(4)所表示之構造單位所成群之至 少一種構造單位(Π)。前述聚合物(II)若具有此般構造單位 (ii),因含有該聚合物(Π)而成之基材之力學性特性提升而 爲佳。In the above formula (2), 'R1 to R4 and a to d are each independently the same as R1 to R4 and a to d in the above formula (1), and Y represents a single bond, -S〇2- or >C=〇. R7 and R8 each independently represent a halogen atom, an organic group having a monovalent number of carbon atoms of 1 to 12, or a nitro group 'm represents hydrazine or 1. However, when 'm is 0', R7 is not a cyano group. g and h each independently represent an integer of 〇~4, and preferably an organic group which is a monovalent number of carbon atoms of 1 to 12, which is the same as the organic group having a carbon number of 1 to 12 in the above formula (1) Organic base and the like. -15- 201206987 In the above polymer (II), the molar ratio of the above structural unit (1) to the above structural unit (2) (however, the total of the two (structural unit (1) + structural unit (2)) is 1 〇〇), from the viewpoint of optical properties, heat resistance and mechanical properties, in structural units (1): structural unit (2) = 5 0 : 5 0~1〇〇: 〇 is better, structural unit (1) : Construction unit (2) = 70: 30~100: 〇 is better, construction unit (1): construction unit (2) = 80: 20~100: 〇 is better. Here, the mechanical properties refer to properties such as tensile strength, elongation at break, tensile modulus of elasticity, and the like of the polymer. Further, the polymer (Π) may have at least one structural unit (Π) selected from the group consisting of the structural unit represented by the following formula (3) and the structural unit represented by the following formula (4). When the polymer (II) has such a structural unit (ii), the mechanical properties of the substrate containing the polymer (Π) are preferably improved.

前述式(3)中,R5及R6各自獨立表示碳數1〜12之1 價之有機基’ Z表示單鍵、-〇-、-S-' -S02-、>C=〇、 -CONH-、-COO-或碳數1〜12之2價之有機基,n表示〇 或1» e及f各自獨立表示〇〜4之整數,較佳爲〇。 碳數1〜12之1價之有機基,可舉出與前述式(1)中碳 數1~12之1價之有機基相同樣之有機基等。 -16- 201206987 碳數1〜12之2價之有機基,可舉出碳數1〜12之2價 之烴基、碳數1〜12之2價之鹵化烴基、含有選自由氧原 子及氮原子所成群之至少一種之原子的碳數之2價 之有機基、以及含有選自由氧原子及氮原子所成群之至少 —種之原子的碳數1~12之2價之鹵化有機基等。 碳數1〜12之2價之烴基,可舉出碳數1〜12之直鏈或 分支鏈之2價之烴基、碳數3~12之2價之脂環式烴基及 碳數6~ 12之2價之芳香族烴基等。 碳數1〜12之直鏈或分支鏈之2價之烴基,可舉出亞 甲基、伸乙基、三亞甲基、異亞丙基、五亞甲基、六亞甲 基及七亞甲基等。 碳數3〜12之2價之脂環式烴基,可舉出環伸丙基、 環伸丁基、環伸戊基及環伸己基等之環伸烷基;環伸丁烯 基、環伸戊烯基及環伸己烯基等之環伸烷烯基等。該脂環 式烴基之鍵結部位在脂環上之任一碳上皆可。 碳數6〜12之2價之芳香族烴基,可舉出伸苯基、伸 萘基及伸聯苯基等。該芳香族烴基之鍵結部位在芳香族環 上之任一碳皆可。 碳數1〜12之2價之鹵化烴基,可舉出碳數1~12之直 鏈或分支鏈之2價之鹵化烴基、碳數3〜12之2價之鹵化 脂環式烴基及碳數6〜12之2價之鹵化芳香族烴基等。 碳數1〜12之直鏈或分支鏈之2價之鹵化烴基,可舉 出二氟亞甲基、二氯亞甲基、四氟伸乙基、四氯伸乙基、 六氟三亞甲基、六氯三亞甲基、六氟亞丙基及六氯異亞丙 -17- 201206987 基等。 碳數3〜12之2價之鹵化脂環式烴基,可舉出前述碳 數3〜12之2價之脂環式烴基中所例示之基之至少一部分 之氫原子經氟原子、氯原子、溴原子或稱原子取代之基 等。 碳數6~12之2價之鹵化芳香族烴基,可舉出前述碳 數6〜1 2之2價之芳香族烴基中所例示之基之至少一部分 之氫原子經氟原子、氯原子、溴原子或碘原子取代之基 等。 含有選自由氧原子及氮原子所成群之至少一種之原子 的碳數1〜12之有機基,可舉出氫原子及碳原子,與由氧 原子及/或氮原子所構成之有機基,尙可舉出具有醚基、 羰基、酯鍵或醯胺鍵與烴基之總碳數1〜12之2價之有機 基等。 含有選自由氧原子及氮原子所成群之至少一種之原子 的碳數1〜12之2價之鹵化有機基,具體而言,可舉出在 含有選自由氧原子及氮原子所成群之至少一種之原子的碳 數1〜12之2價之有機基中所例示之基之至少一部分之氫 原子經氟原子、氯原子、溴原子或碘原子取代之基等。 前述式(3)中Z係以單鍵、-0-、-S02-、〉C=0或碳 數1~12之2價之有機基爲佳,以碳數1〜12之2價之烴基 或碳數1〜12之2價之鹵化烴基爲更佳,碳數1〜12之2價 之烴基係以碳數1〜12之直鏈或分支鏈之2價之烴基或碳 數3〜12之2價之脂環式烴基爲佳。 -18- 201206987In the above formula (3), R5 and R6 each independently represent a carbon number of 1 to 12, and the organic group 'Z represents a single bond, -〇-, -S-'-S02-, > C=〇, -CONH -, -COO- or a two-valent organic group having a carbon number of 1 to 12, wherein n represents 〇 or 1»e and f each independently represents an integer of 〇4, preferably 〇. The organic group having a monovalent value of the carbon number of 1 to 12 is the same as the organic group having the same organic number as the carbon number of 1 to 12 in the above formula (1). -16-201206987 The organic group having a carbon number of 1 to 12, which is a divalent hydrocarbon group having a carbon number of 1 to 12, a halogenated hydrocarbon group having a carbon number of 1 to 12, and a halogen atom selected from the group consisting of an oxygen atom and a nitrogen atom. a divalent organic group having a carbon number of at least one of the atoms of the group, and a halogenated organic group having a carbon number of 1 to 12 and containing at least one atom selected from the group consisting of an oxygen atom and a nitrogen atom . The hydrocarbon group having a carbon number of from 1 to 12, which may be a divalent hydrocarbon group having a linear or branched chain of 1 to 12 carbon atoms, an alicyclic hydrocarbon group having a carbon number of 3 to 12, and a carbon number of 6 to 12 A divalent aromatic hydrocarbon group or the like. Examples of the divalent hydrocarbon group of a linear or branched chain having 1 to 12 carbon atoms include a methylene group, an exoethyl group, a trimethylene group, an isopropylidene group, a pentamethylene group, a hexamethylene group, and a heptaylene group. Base. Examples of the alicyclic hydrocarbon group having a carbon number of from 3 to 12, and examples thereof include a cycloalkyl group such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, and a cyclohexyl group; a cyclobutene group and a ring extension; a cycloalkenylene group such as a pentenyl group and a cyclohexenylene group. The bonding site of the alicyclic hydrocarbon group may be on any of the carbons on the alicyclic ring. Examples of the aromatic hydrocarbon group having a carbon number of 6 to 12 and the like include a stretching phenyl group, a stretching naphthyl group, and a stretching phenyl group. The bonding site of the aromatic hydrocarbon group may be any carbon on the aromatic ring. The divalent halogenated hydrocarbon group having a carbon number of 1 to 12 may, for example, be a halogenated hydrocarbon group having a linear or branched chain of 1 to 12 carbon atoms, a halogenated alicyclic hydrocarbon group having a carbon number of 3 to 12, and a carbon number. A halogenated aromatic hydrocarbon group of 2 to 12 valences. The divalent halogenated hydrocarbon group of a linear or branched chain having 1 to 12 carbon atoms may, for example, be difluoromethylene, dichloromethylene, tetrafluoroextension ethyl, tetrachloroethylene or hexafluorotrimethylene. , hexachlorotrimethylene, hexafluoropropylene and hexachloroisopropylidene-17- 201206987 basis. The divalent halogenated alicyclic hydrocarbon group having a carbon number of from 3 to 12, which is a hydrogen atom of at least a part of the group exemplified in the alicyclic hydrocarbon group having a carbon number of from 3 to 12, is a fluorine atom or a chlorine atom. A bromine atom or a group substituted by an atom. The halogenated aromatic hydrocarbon group having a carbon number of from 6 to 12, which is a hydrogen atom of at least a part of the group of the aromatic hydrocarbon group having a carbon number of from 6 to 12, is a fluorine atom, a chlorine atom or a bromine. A group substituted by an atom or an iodine atom. The organic group having 1 to 12 carbon atoms and containing an atom selected from at least one of an oxygen atom and a nitrogen atom may, for example, be a hydrogen atom or a carbon atom, and an organic group composed of an oxygen atom and/or a nitrogen atom. The oxime may be an organic group having an ether group, a carbonyl group, an ester bond or a guanamine bond and a hydrocarbon group having a total carbon number of 1 to 12, and the like. The halogenated organic group having a carbon number of from 1 to 12, which is selected from the group consisting of at least one of an oxygen atom and a nitrogen atom, and specifically includes a group selected from the group consisting of an oxygen atom and a nitrogen atom. At least one hydrogen atom of at least one of the carbon atoms having a carbon number of from 1 to 12, at least one of the atoms, is substituted with a fluorine atom, a chlorine atom, a bromine atom or an iodine atom. In the above formula (3), Z is preferably a single bond, -0-, -S02-, >C=0 or a carbon number of 1 to 12, preferably a hydrocarbon group having a carbon number of 1 to 12; Or a divalent halogenated hydrocarbon group having a carbon number of 1 to 12 is more preferable, and a hydrocarbon group having a carbon number of 1 to 12 is a hydrocarbon group having a carbon number of 1 to 12 or a branched or branched chain hydrocarbon group or a carbon number of 3 to 12 The divalent alicyclic hydrocarbon group is preferred. -18- 201206987

前述式(4)中,r7、r8、γ、m、g及h係各自獨立與 前述式(2)中之R7、R8、Y、m、g& h相同意義,R5、 R6、Z、η、e及f係各自獨立與前述式(3)中之R5、R6、 2、11、6及^目同意義。惟,111爲〇時,:^不爲氰基。 則述聚合物(II)中,前述構造單位⑴與前述構造單位 (Π)之莫耳比(但,兩者((ί)+(η))之合計爲100),由光學 特性、耐熱性及力學性特性之觀點,以(i) : (ii) = 50 : 50~100: 0 爲佳’⑴:(Η)=7〇: 3〇~1〇〇: 〇 爲較佳, (i)· (ii)= 80: 20〜1〇〇: 〇 爲更佳。 前述聚合物(II)由光學特性、耐熱性及力學的特性之 觀點’在全構造單位中含有前述構造單位(i)及前述構造單 位(Π) 70莫耳%以上爲佳,全構造單位中含有95莫耳%以 上爲更佳。 〔聚合物(II)之合成方法〕 前述聚合物(II)係例如可藉由使含有選自由下述式(5) 所表示之化合物(以下亦稱爲「化合物(5)」)及下述式(7) 所表示之化合物(以下亦稱爲「化合物(7 )」)所群之至少一 個化合物之成分(A)與含有下述式(6)所表示之化合物之成 分(B)反應而得。 -19- 201206987 【化9】In the above formula (4), r7, r8, γ, m, g and h are each independently of the same meaning as R7, R8, Y, m, g & h in the above formula (2), R5, R6, Z, η , e and f are each independently equivalent to R5, R6, 2, 11, 6, and ^ in the above formula (3). However, when 111 is 〇, :^ is not a cyano group. In the polymer (II), the molar ratio of the structural unit (1) to the structural unit (Π) (however, the sum of the two ((ί)+(η)) is 100), and optical properties and heat resistance. And the viewpoint of mechanical properties, with (i) : (ii) = 50 : 50~100: 0 is better '(1): (Η) = 7〇: 3〇~1〇〇: 〇 is better, (i) · (ii) = 80: 20~1〇〇: 〇 is better. The polymer (II) preferably contains the structural unit (i) and the structural unit (Π) of 70 mol% or more in the entire structural unit from the viewpoints of optical properties, heat resistance, and mechanical properties, and is preferably in the entire structural unit. More than 95% by mole is more preferred. [Synthesis method of the polymer (II)] The polymer (II) may be, for example, a compound selected from the group consisting of the following formula (5) (hereinafter also referred to as "compound (5)") and the following The component (A) of at least one compound of the compound represented by the formula (7) (hereinafter also referred to as "compound (7)") is reacted with the component (B) containing the compound represented by the following formula (6). Got it. -19- 201206987 【化9】

CNCN

Χ"ΤΓ 7Τχ (5) 前述式(5)中,X係獨立表示鹵素原子,以氟原子爲 佳。 【化1 〇】 (R8)hΧ"ΤΓ 7Τχ (5) In the above formula (5), X represents a halogen atom independently, and a fluorine atom is preferred. [化1 〇] (R8)h

前述式(7)中,R7、R8、Y、m、g及h係各自獨立與 前述式(2)中之117、118、丫、111、8及11相同意義,乂係獨 立與前述式(5)中之X相同意義。但,m爲0時,R7不爲 氰基。 【化11】In the above formula (7), R7, R8, Y, m, g and h are each independently of the same meaning as 117, 118, 丫, 111, 8 and 11 in the above formula (2), and the oxime is independent from the above formula ( 5) The meaning of X is the same. However, when m is 0, R7 is not a cyano group. 【化11】

前述式(6)中,Ra獨立表示氫原子、甲基、乙基、乙 -20- 201206987 醯基、甲烷磺醯基或三氟甲基磺醯基,此中亦以氫原子爲 佳。尙且’式(6)中’ R1〜R4及a〜d係各自獨立與前述式(1) 中之R1〜R4及a〜d相同意義。 上述化合物(5)具體地可舉出2,6-二氟苯甲腈、2,5-二 氟苯甲腈、2,4 -二氟苯甲腈、2,6 -二氯苯甲腈、2,5 -二氯 苯甲腈、2,4-二氯苯甲腈及此等之反應性衍生物。尤其由 反應性及經濟性等之觀點,可適宜使用2,6 -二氟苯甲腈及 2,6 -二氯苯甲腈。此等化合物亦可將2種以上組合使用。 上述式(6)所表示之化合物(以下亦稱爲「化合物 (6)」),具體地可舉出9,9-雙(4-羥基苯基)蒹、9,9-雙(3-苯基_4·羥基苯基)莽、9,9-雙(3,5-二苯基_4_羥基苯基) 葬、9,9_雙(4-羥基-3-甲基苯基)蕗、9,9-雙(4-羥基-3,5-二 甲基苯基)蕗、9,9-雙(4-羥基-3-環己基苯基)弗及此等之反 應性衍生物等。上述之化合物中亦以9,9-雙(4-羥基苯基) 蕗及9,9-雙(3-苯基-4-羥基苯基)莽可被適宜使用。此等化 合物亦可將2種以上組合使用。 上述化合物(7)具體地可舉出4,4’-二氟二苯甲酮、 4,4’-二氟二苯楓、2,4’-二氟二苯甲酮、2,4’-二氟二苯 颯、2,2’-二氟二苯甲酮、2,2’-二氟二苯颯、3,3’-二硝基-4,4,-二氟二苯甲酮、3,3,-二硝基-4,4’_ 二氟二苯颯、4,4’-二氯二苯甲酮、4,4,-二氯二苯颯、2,4’_二氯二苯甲酮、 2,4,-二氯二苯颯、2,2,-二氯二苯甲酮、2,2’_二氯二苯 颯、3,3,-二硝基-4,4,-二氯二苯甲酮及3,3’-二硝基-4,4’-二氯二苯楓等。此等中亦以4,4'-二氟二苯甲酮、4,4'-二 -21 - 201206987 氟二苯颯爲佳。此等化合物亦可將2種以上組合使用。 選自由化合物(5)及化合物(?)所成群之至少一種化合 物,在成分(A)100莫耳%中,以含有8〇莫耳%〜1〇〇莫耳 °/。爲佳’以含有9 0莫耳%〜1 〇 〇莫耳%爲更佳。 又,成分(B)因應必要以含有下述式(8)所表示之化合 物爲佳。 化合物(6)在成分(B)l〇〇莫耳%中,以含有5〇莫耳 %〜100莫耳%爲佳,以含有8〇莫耳%~1〇〇莫耳%爲較佳, 以含有90莫耳1〇〇莫耳%爲更佳。 【化1 2】In the above formula (6), Ra independently represents a hydrogen atom, a methyl group, an ethyl group, a ethane-20-201206987 fluorenyl group, a methanesulfonyl group or a trifluoromethylsulfonyl group, and a hydrogen atom is also preferred. Further, in the formula (6), R1 to R4 and a to d are each independently equivalent to R1 to R4 and a to d in the above formula (1). Specific examples of the above compound (5) include 2,6-difluorobenzonitrile, 2,5-difluorobenzonitrile, 2,4-difluorobenzonitrile, and 2,6-dichlorobenzonitrile. 2,5-Dichlorobenzonitrile, 2,4-dichlorobenzonitrile and reactive derivatives thereof. Particularly, from the viewpoints of reactivity and economy, 2,6-difluorobenzonitrile and 2,6-dichlorobenzonitrile can be suitably used. These compounds may be used in combination of two or more kinds. The compound represented by the above formula (6) (hereinafter also referred to as "compound (6)"), specifically, 9,9-bis(4-hydroxyphenyl)fluorene, 9,9-bis(3-benzene) _4·hydroxyphenyl)anthracene, 9,9-bis(3,5-diphenyl-4-hydroxyphenyl) burial, 9,9-bis(4-hydroxy-3-methylphenyl)anthracene 9,9-bis(4-hydroxy-3,5-dimethylphenyl)anthracene, 9,9-bis(4-hydroxy-3-cyclohexylphenyl) fluorene, and the like, and the like . Among the above compounds, 9,9-bis(4-hydroxyphenyl)fluorene and 9,9-bis(3-phenyl-4-hydroxyphenyl)fluorene may also be suitably used. These compounds may also be used in combination of two or more kinds. Specific examples of the above compound (7) include 4,4'-difluorobenzophenone, 4,4'-difluorodiphenyl maple, 2,4'-difluorobenzophenone, and 2,4'- Difluorodiphenyl hydrazine, 2,2'-difluorobenzophenone, 2,2'-difluorodiphenyl hydrazine, 3,3'-dinitro-4,4,-difluorobenzophenone, 3,3,-Dinitro-4,4'-difluorodiphenyl hydrazine, 4,4'-dichlorobenzophenone, 4,4,-dichlorodiphenyl hydrazine, 2,4'-dichloro Benzophenone, 2,4,-dichlorodiphenyl hydrazine, 2,2,-dichlorobenzophenone, 2,2'-dichlorodiphenyl hydrazine, 3,3,-dinitro-4, 4,-Dichlorobenzophenone and 3,3'-dinitro-4,4'-dichlorodiphenyl maple. Among them, 4,4'-difluorobenzophenone and 4,4'-di-21 - 201206987 fluorodiphenyl hydrazine are preferred. These compounds may be used in combination of two or more kinds. At least one compound selected from the group consisting of the compound (5) and the compound (?) is contained in an amount of 100 mol% of the component (A) to contain 8 mol% to 1 mol%. It is better to contain 90%%~1 〇 〇 耳 %. Further, the component (B) is preferably a compound represented by the following formula (8). The compound (6) is preferably contained in an amount of 5 〇 mol% to 100 mol%, and preferably 8 mol% to 1 mol%, in the component (B). It is more preferable to contain 90 mol% of 1 mol%. [1 2]

則述式(8)中’ R5、R6、z、n、e及f係各自獨立與前 述式(3)中之R5、R6、Z、n、e及f相同意義,Ra係獨立 與前述式(6)中之Ra相同意義。 前述式(8)所表示之化合物,可舉出氫醒、間苯二 酚、2-苯基氫醌、4,4’-聯苯酚、3,3,-聯苯酚、4,4,-二羥 基二苯颯、3,3’-二羥基二苯颯、4,4,-二羥基二苯甲酮、 3,3’-二羥基二苯甲酮、2,2-雙(4-羥基苯基)丙烷、^丨-雙 (4-羥基苯基)環己烷、2,2-雙(4-羥基苯基^^^ +六 氟丙院及此等之反應性衍生物等。此等化合物亦可將2種 以上組合使用。 上述之化合物之中亦以間苯二酚、4,4,-聯苯酣、 -22- 201206987 雙(4_羥基苯基)丙烷、1,1-雙(4_羥基苯基)環己烷、2,2-雙 (4-羥基苯基)-1,1,1,3,3,3-六氟丙烷爲佳,由反應性及力學 性特性之觀點,可適宜使用4,4’-聯苯酚。此等化合物可 將2種以上組合使用。 前述聚合物(Π)更具體言之,可藉由以下所示之方法 (Γ)進行合成。 方法(Γ):使成分(B)在有機溶劑中與鹼金屬化合物反 應,得到成分(B)之鹼金屬鹽後,使所得之鹼金屬鹽與成 分(A)反應。尙且,成分(B)與鹼金屬化合物之反應藉由在 成分(A)之存在下進行,亦可使成分(B)之鹼金屬鹽與成分 (A)反應。 反應所使用之鹼金屬化合物,可舉出鋰、鉀及鈉等之 鹼金屬;氫化鋰、氫化鉀及氫化鈉等之氫化鹼金屬;氫氧 化鋰、氫氧化鉀及氫氧化鈉等之氫氧化鹼金屬;碳酸鋰、 碳酸鉀及碳酸鈉等之鹼金屬碳酸鹽;碳酸氫鋰、碳酸氫鉀 及碳酸氫鈉等之鹼金屬碳酸氫鹽等。此等可使用1種或將 2種以上組合使用》 鹼金屬化合物相對於前述成分(B)中全部之-〇-Ra,驗 金屬化合物中之金屬原子之量通常使用1〜3倍當量,較佳 使用1.1~2倍當量,更佳使用1.2〜1.5倍當量之量。 反應所使用之有機溶劑,可使用N,N -二甲基乙醯 胺、N,N-二甲基甲醯胺、N -甲基-2-吡咯啶酮、ι,3 -二甲 基-2-咪唑烷酮、γ-丁內酯 '環丁颯、二甲亞颯、二乙亞 颯、二甲基颯、二乙基楓、二異丙基颯、二苯颯、二苯基 -23- 201206987 醚、二苯甲酮 '二烷氧基苯(烷氧基之碳數爲1〜4)及三烷 氧基苯(烷氧基之碳數爲1〜4)等。此等溶劑之中,特別以 N -甲基-2-吡咯啶酮、N,N-二甲基乙醯胺、環丁颯、二苯 颯及二甲亞楓等之介電率高之極性有機溶劑可被適宜使 用。此等可使用1種或將2種以上組合使用亦可。 並且,於前述反應時,更亦可使用苯、甲苯、茬、己 烷、環己烷、辛烷、氯苯、二噁烷、四氫呋喃、大茴香醚 及苯乙醚等之與水共沸之溶劑。此等可使用1種或將2種 以上組合使用亦可。 成分(A)與成分(B)之使用比例係將成分(A)與成分(B) 之合計設爲100莫耳%時,成分(A)較佳爲45莫耳%以上 5 5莫耳%以下’更佳爲5 0莫耳%以上5 2莫耳%以下,更 較佳爲超過50莫耳%且52莫耳%以下,成分(B)較佳爲45 莫耳%以上5 5莫耳%以下,更佳爲4 8莫耳%以上5 〇莫耳 %以下,更較佳爲48莫耳%以上而未滿50莫耳%。 又’反應溫度較佳在60〜25CTC,更佳在80〜200t之 範圍。反應時間較佳爲15分〜1〇〇小時,更較爲i小時 ~24小時之範圍》 〔聚合物(I)之物性等〕 前述聚合物(I)由於不需要聚醯亞胺系聚合物之合成 所必須之醯亞胺化用之高溫處理,對聚合物之製造製程負 荷爲低,且可容易地製造聚合物。 前述聚合物(I)係以TOSOH製HLC- 8 220型GPC裝置 -24- 201206987 (管柱:TSKgel α-Μ、展開溶劑:四氫呋喃(以下亦稱爲 「THF j )測定,以聚苯乙烯換算之重量平均分子量(Mw) 較佳爲 5,000~500,000,更佳爲 15,000〜400,000,更較佳 爲 30,000~300,000 。 前述聚合物⑴以熱重量分析法(TGA)所測定之熱分解 溫度較佳爲450°C以上,更佳爲475°C以上,更較佳爲 49(TC以上。 〔基材之製造方法〕 前述基材之製造方法並無特別限制,可舉出將含有前 述聚合物(I)之聚合物組成物塗佈於支持體上形成塗膜, 其次藉由自該塗膜去除有機溶劑而在支持體上形成基材之 方法。 藉由以此般方法形成基材,由於可防止聚合物之分子 定向於一定方向,而可得到位相差更小之基材。 前述聚合物組成物可直接使用由前述之方法(Γ)所得 之聚合物(II)與有機溶劑之混合物。藉由使用此般聚合物 組成物,可容易地且平價地製造基材。 又,前述聚合物組成物亦可藉由以前述之方法(Γ)所 得之聚合物(II)與有機溶劑之混合物,將聚合物單離(純化) 爲固體分後,再使其溶解於有機溶劑而調製成聚合物組成 物。 將前述聚合物(II)單離(純化)爲固體分之方法,例 如,藉由使聚合物再沈澱於甲醇等之聚合物之不良溶劑 -25- 201206987 中,其後進行過濾,其次減壓乾燥等而施行。 溶解前述聚合物(Π)之有機溶劑,例如可適宜使用二 氯甲烷、四氫呋喃、環己酮、N,N-二甲基甲醯胺、N,N-二 甲基乙醯胺、N-甲基吡咯啶酮及γ-丁內酯,由塗佈性、 經濟性之觀點,較佳適宜使用二氯甲烷、Ν,Ν-二甲基乙醯 胺及Ν-甲基吡咯啶酮。此等溶劑可單獨使用1種或亦可 將2種以上倂用。 溶解有前述聚合物之聚合物組成物中之聚合物濃度, 雖根據聚合物之分子量而相異,通常爲5~40質量%,較 佳爲7〜25質量%。聚合物組成物中之聚合物(I)之濃度若 在前述範圍內,則可藉由厚膜化使針孔不易產生,且可形 成表面平滑性優良之基材。 聚合物組成物之黏度雖依據聚合物之分子量或濃度而 相異,通常爲2,000〜1 00,000mPa. s,較佳爲3,000〜 50,0 00mPa · s。聚合物組成物之黏度若在前述範圍內,成 膜中之組成物之滯留性優良,由於容易調整厚度,故容易 使基材成形。 又,更可使聚合物組成物中含有防老劑,藉由含有防 老劑,可使所得之基材之耐久性更加提升。 防老劑較佳可舉出受阻酚系化合物。 本發明可使用之受阻酚系化合物,可舉出三乙二醇-雙[3-(3-tert-丁基-5-甲基-4-羥基苯基)丙酸鹽]、1,6-己二 醇-雙[3-(3,5-二-tert-丁基-4-羥基苯基)丙酸鹽]、2,4-雙-(n-辛基硫代)-6-(4-羥基-3,5-二-tert-丁基苯胺基)-3,5-三 -26- 201206987 曉、季戊四醇肆[3-(3,5-tert -丁基-4-經基苯基)两酸鹽]、 1,1,3-參[2-甲基-4-[3·(3,5-二-tert-丁基-4-羥基苯基)丙醯 氧基]-5-tert-丁基苯基]丁烷、2,2-硫代-二伸乙基雙[3_ (3,5-二-tert-丁基-4-羥基苯基)丙酸鹽]、十八基_3-(3,5-二-tert-丁基_4_羥基苯基)丙酸鹽、Ν,Ν-六亞甲基雙(3,5-二- tert-丁基-4-羥基-氫桂皮醯胺)、1,3,5-三甲基-2,4,6-參 (3,5-二-tert-丁基-4-羥基苄基)苯、參-(3>5-二-tert-丁基-4_羥基苄基)-三聚異氰酸鹽、及、3,9-雙[2-〔 3-(3-tert-丁 基-4-羥基-5 -甲基苯基)丙醯氧基〕-1,1-二甲基乙基]_ 2,4,8,10-四氧雜螺[5.5]十一烷等。 對前述聚合物組成物配合防老劑時,前述防老劑之配 合量係相對於聚合物(1)1〇〇重量份爲0.01〜10重量份。 作爲將前述聚合物組成物塗佈於支持體上而形成塗膜 之方法,可舉出使用輥塗佈法、凹版塗佈法、旋轉塗佈法 及刮刀(doctor blade)塗佈法之方法等。 塗膜之厚度並無特別限定,例如1〜25 0μηι,較佳爲 2~150μηι,更佳爲 5~125μιηβ 前述支持體可舉出聚對酞酸乙二酯(PET)薄膜及SUS 板等。 由塗膜去除前述有機溶劑之方法並無特別限制,例如 可舉出加熱塗膜之方法。 前述加熱之條件只要係可由塗膜去除有機溶劑即可, 因應支持體或聚合物適宜決定即可,例如加熱溫度以 30〜3 00°C爲佳,40〜250°C爲較佳,50~23 0°C爲更佳。加熱 -27- 201206987 時間係以1 0分〜5小時爲佳。尙且,加熱亦可藉由二段階 以上進行。具體而言,在30~80°C之溫度下進行10分~2 小時乾燥後,在1〇〇〜250°C中再加熱1〇分〜2小時等。 又,因應必要亦可在氮環境下或減壓下進行乾燥。 又,製造前述基材時,可舉出由塗膜去除有機溶劑 後,燒成溶劑已除去之塗膜的方法。於製造基材時,藉由 含有燒成步驟,而可得到熱收縮率小之基材。因此,可得 到電特性及信賴性等皆優之複合物。 於前述燒成時,將形成於前述支持體上之塗膜與支持 體一同燒成亦可,但由不會影響支持體之性質之觀點,將 形成於前述支持體上之塗膜自支持體剝離,其後進行燒成 爲佳。尙且,由塗膜去除有機溶劑之方法,亦可藉由燒成 塗膜而施行,於燒成步驟之前另外含有去除有機溶劑之步 驟亦可。尙且,將自支持體剝離之塗膜進行燒成時,自支 持體將塗膜剝離前,以預先含有由塗膜去除有機溶劑之步 驟爲佳。 前述燒成步驟係以在特定之溫度下實行爲佳,燒成溫 度較佳爲 210°C〜3 5 0 °C,更佳爲220°C~3 3 0°C,更較佳爲 2 3 0°C~3 2(TC。燒成時間較佳爲10分〜5小時。 燒成環境並無特別限制,以在大氣下或情性氣體環境 下等爲佳,以惰性氣體環境下爲特佳。 惰性氣體由著色性之觀點,可舉出氮、氬、氨等,但 以氮爲佳。 所得之基材可自支持體剝離後而使用,或依據使用之 -28- 201206987 支持體之種類或複合物之用途而相異,亦可在未剝離之狀 態下直接使用。 前述基材之厚度可因應所期望之用途適宜選擇,較佳 爲1~2 50μηι,更佳爲2~150μιη,更較佳爲10〜125μιη» 若考慮到基材之位相差及顯示裝置或觸控面板之輕量 化等,係以基材之膜厚爲薄較佳。 〔基材之物性等〕 前述基材係以Rigaku公司製8230型DSC測定裝置 (昇溫速度 20°C /分)所測得之玻璃轉移溫度(Tg)爲 230~3 50°C爲佳,240〜3 3 0°C爲更佳,250~300〇C爲更較佳。. 前述基材若具有此般玻璃轉移溫度,於該基材之至少 一面形成選自由透明導電膜、著色部及開關元件所成群之 至少1種構件時,更且,由於依據希望而設置於著色部等 上之由透明樹脂所構成之保護膜或形成透明導電膜時之加 熱或熱處理可在高溫下進行,構件之形成方法並未受到限 定,而可容易地製造複合物。 前述基材在厚度爲30μιη時,在JIS K7105透明度試 驗法中之全光線穿透率係以85%以上爲佳,88%以上爲更 佳。全光線穿透率係可使用霾度計SC-3H(須賀試驗機公 司製)而測定。 前述基材在厚度爲3 0μηι時,波長400nm中之光線穿 透率較佳爲70%以上,更佳爲75%以上,更較佳爲80%以 上。波長400nm中之光線穿透率可使用紫外線·可見分 -29 - 201206987 光光度計V-570(JASCO公司製)而測定。 前述基材之光線穿透率若在此般範圍內,由於基材特 別顯示具有高光線穿透率,故可適宜使用於透明導電性薄 膜、濾色器基板及開關元件基板等之複合物。 前述基材在厚度爲30 μπι時,ΥΙ値(黃色指數)係以 3 · 0以下爲佳’ 2 · 5以下爲更佳,2.0以下爲更較佳。ΥI値 係可使用須賀試驗機公司製SM-T型色彩測定器而測定。 藉由使ΥΙ値在此般範圍內,可得到不易著色之基材,故 可適宜用於透明導電性薄膜、濾色器基板及開關元件基板 等之複合物》 · 又’前述基材若厚度爲30μιη時,以熱風乾燥機在大 氣中以2 3 0 °C進行1小時之加熱後之γ I値係以在3.0以下 爲佳’ 2.5以下爲較佳,2.0以下爲更佳。YI値若在此般 範圍內,由於可得到即使在高溫下亦不易著色之基材,故 可得到光學特性等優良之透明導電性薄膜、濾色器基板及 開關元件基板等之複合物。 前述基材相對於波長63 3nm之光,較佳具有1.55〜 1·75之折射率,更隹具有1.60-1.70之折射率。折射率係 可使用稜鏡耦合器 Model 2010(Metricon公司製)而測 定。 前述基材之拉伸強度係以50〜200MPa爲佳,80~150 MPa 爲更佳。拉伸強度係可使用拉伸試驗機 5 5 43 (INSTRON公司製)而測定。 前述基材之裂斷伸長係以5 ~ 1 0 0 %爲佳,1 5〜1 0 0 %爲 -30- 201206987 更佳。裂斷伸長係可使用拉伸試驗機5543(INSTRON公司 製)而測定。 前述基材之拉伸彈性模數係以2.5〜4.OGPa爲佳, 2.7〜3.7 GPa爲更佳。拉伸彈性模數係可使用拉伸試驗機 5 543 (INSTRON公司製)而測定。 前述基材在厚度爲3 0 μιη時,厚度方向之位相差(Rth) 係以200nm以下爲佳,50nm以下爲較佳,l〇nm以下爲更 佳。位相差係可使用大塚電子公司製RETS分光器而測 定。 前述基材若具有此般低位相差,則成爲光學等方性優 良之基材,將具有該基材之複合物使用於觸控面板或顯示 裝置時,可適宜地防止因顯示面顯現著色或干渉條紋而導 致顯示品質降低。因此,具有前述基材之本發明之複合物 可適宜使用於觸控面板或顯示裝置》 前述基材使用Seiko Instruments公司製SSC-5200型 TMA娜定裝置而測定之線膨脹係數較佳爲80 ppm/ K以 下,更佳爲75ppm/ Κ以下。 前述基材之濕度膨脹係數係在15 ppm / % RH以下爲 佳,12 ppm/ %RH以下爲更佳。濕度膨脹係數係可使用 TMA(SII Nanotechnology 公司製、TMA-SS6100)濕度控制 選項而測定。基材之膨脹係數若在前述範圍內,由於基材 顯示高尺寸安定性(環境信賴性),而可適宜使用於透明導 電性薄膜、瀘色器基板及開關元件基板等之複合物或觸控 面板。特別係可適宜使用於要求高環境信賴性之車載用導 -31 - 201206987 航裝置等》 . 前述基材在JIS Κ7133(熱處理溫度220°C、60分)中 之熱收縮率爲-0.1~0·1%,較佳爲-0.05〜0.05%,更佳爲-0·03~0·03%。 尙且,「熱收縮率」係以JIS Κ7133爲基準進行測定 所求得者,具體而言,熱處理係將預先已測定正確長度之 基材(10 0 mm XI 0 0mm)以無緊張狀態放入設定至既定之溫度 (220°C)之恆溫室中,於保持60分鐘後取出,回溫至室溫 後讀取其尺寸之變化。且,由熱處理前之長度L。與熱處 理後之長度L,藉由下式求得熱收縮率。 熱收縮率=(LQ-L)xl00/ L〇(%) 又,前述基材係除了將熱處理時之溫度變更爲24(TC 以外與上述同樣地進行測定時之熱收縮率較佳爲-〇.2~ 0.2%,更佳爲-0.1〜0.1%,更較佳爲-0.05〜0.05%,特佳爲 -0.03〜0.03 %。 此般熱收縮率之値在前述範圍內之基材,在基材上形 成透明導電膜、著色部及開關元件等之構件時,即使曝露 於高溫之情況時,因其尺寸變化爲少,由己形成之構件所 產生之應力及變位量爲少而爲佳。 <複合物> 本發明之複合物係於前述基材之至少一面形成選自由 透明導電膜、著色部及開關元件所成群之至少1種構而 成。 本發明之複合物具體地可舉出於前述基材之至少一面 -32- 201206987 形成透明導電膜而成之透明導電性薄膜、於前述基材之至 少一面形成著色部而成之濾色器基板、及於前述基材之至 少一面形成開關元件而成之開關元件基板等之光學零件。 〔透明導電性薄膜〕 透明導電性薄膜係於前述基材之至少一面形成透明導 電膜而成。 前述透明導電膜只要係透明且顯示導電性之膜則不受 特別限制,可舉出氧化錫、氧化銦、氧化銻、氧化鋅、氧 化鎘、氧化銦錫(ITO)或氧化銦鋅(IZO)等所構成之金屬氧 化物膜,或將此等金屬氧化物作爲主體之複合膜,金、 銀、銅、錫、鎳、鋁或鈀等所構成之金屬膜。 透明導電膜之形成方法並無特別限制,可舉出真空蒸 鍍法、濺鍍法、離子鍍法、CVD法等之公知之方法,由 膜之均勻性或基材對薄膜之密著性之觀點,以濺鍍法形成 薄膜爲佳。 以濺鏟法等形成由金屬或金屬氧化物等所構成之膜時 之溫度’以150~3 5 0°(:爲佳,180~3 00。(:爲較佳,22 0〜2 60 °<:爲更佳。 前述基材由於含有前述聚合物(I),而玻璃轉移溫度 爲高。因此,即使係必須此般高溫加熱之方法,亦可於基 材上形成透明導電膜’而可製造具有高電特性及高信賴性 之透明導電性薄膜。 又’亦可將聚噻吩系或聚苯胺系之導電性聚合物塗佈 -33- 201206987 於基材上,藉由成膜而形成透明導電膜。 透明導電膜之厚度以30A以上爲佳,若比此薄時, 比電阻(體積電阻)則變成在1x1 0_3Ω . cm以下,而有變得 難以形成具有良好導電性之連續被膜之情形。另一方®, 若過厚時,由於會導致透明性降低等,故適宜厚度胃 50〜2000 A之程度。 此等透明導電膜可爲1層,亦可由多層所構成者。 於基材上形成透明導電膜時,由提升基材與透明導胃 膜之密著性之觀點,以預先對基材表面施以電漿處理、電 暈處理、鹼處理、塗覆處理等之表面處理爲佳。 前述透明導電性薄膜可依據希望於其至少一面具有防 反射膜或硬塗覆膜等,又,亦可施以防牛頓環處理。 前述透明導電性薄膜使用三菱化學(股)製之低電阻値 計「Loresta-GP」所測定之比電阻値(體積電阻値)較佳爲 2χ10_3Ω· cm以下,更佳爲5χ10_4Ω· cm以下。藉由使比 電阻値在前述範圍內,可成爲導電性優良之薄膜,且由於 含有此般薄膜之觸控面板即使對於快速動作亦可正確地快 速反應,故爲佳。 本發明之複合物係以在前述透明導電性薄膜之至少一 面具備偏光板而成者爲佳,並在與層合有基材之透明導電 膜之面相反之面上以層合有偏光板爲佳。 前述偏光板可爲圓偏光板,亦可爲直線偏光板,而將 前述複合物使用於觸控面板時,由於其辨視性能提升,故 以使用圓偏光板爲佳。 -34- 201206987 前述圓偏光板係以含有1枚之直線偏光板與1枚或2 枚以上之位相差板而成者爲佳。層合偏光板與透明導電性 薄膜之方法並不受特別限制,可使用不損及本發明之效果 及作爲觸控面板之性質等的接著劑等而進行層合。 〔濾色器基板〕 濾色器基板係於前述基材之至少一面形成著色部而 成。 前述著色部可藉由以往公知之方法而形成於前述基材 上。 具體而言,首先洗淨基材之表面。 其次,以濺鍍法等在基材之單面將鉻或黑色樹脂等之 黑色矩陣材料予以成膜。其後,於此黑色矩陣材料膜之表 面塗覆光阻材料等,因應必要使其乾燥後使用光罩進行曝 光、顯像並進行抗蝕之圖型化。 其後,施行蝕刻及抗蝕之剝離並使黑色矩陣材料僅殘 留於必要之部分,藉由以熱處理使其硬化而可形成黑色矩 陣。熱處理時之溫度係依據材料而適宜調節即可,以 150〜300°C爲佳,180〜2 50°C爲較佳,220°C以上爲更佳。 其次,形成紅、綠、藍(RGB)等之各色著色部。例如 形成紅色之著色部時,塗佈紅色之色素材料並藉由預烘烤 而可得到紅色色素材料膜。接著,對此紅色色素材料膜之 表面塗覆光阻,且因應必要使其乾燥後使用光罩進行曝 光、顯像並進行抗飽之圖型化。 -35- 201206987 其後,施行蝕刻及抗蝕之剝離並 留於必要之部分,藉由以熱處理使其 熱處理時之溫度係依據所使用之材 150~300°C 爲佳,180 〜250°C 爲較佳, 色及藍色等剩餘之各色之著色部亦可 而形成。 又,於黑色矩陣上同時塗佈紅、 色色素材料,以同樣之方法亦可形成 前述基材由於具有高耐熱性,故 各色色素材料充分地硬化。因此,可 精細度之濾色器基板。 作爲黑色矩陣或各色著色部之圖 述之光阻之方法以外,亦可採用使用 陣材料或各色色素材料,不使用抗触 圖型化之方法。又,亦可藉由網版印 印刷等之印刷法而直接進行黑色矩陣 化。 尙且,作爲黑色矩陣材料或各色 之金屬及碳黑等之顯示黑色材料或顯 素’與丙烯酸系樹脂、環氧系樹脂或 混合物等。 光阻材料係使用丙烯酸系樹脂、 胺系樹脂等之樹脂與任意追添加劑的 矩陣材料、各色色素材料及光阻材料 i使紅色色素材料僅殘 ;硬化而紅色著色部。 料適宜調節即可,以 220°C以上爲更佳。綠 藉由重複同樣之操作 綠、藍(RGB)等之各 各色著色部。 .可使黑色矩陣材料或 製造具有高對比及高 型化法,除了使用上 具有感光性之黑色矩 而直接藉由光罩進行 刷、凹版印刷及噴墨 或各色著色部之圖型 色素材料係使用鉻等 示紅、綠或藍色之色 聚醯亞胺系樹脂等之 環氧系樹脂或聚醯亞 混合物等。此等黑色 ,由塗布性之觀點, -36- 201206987 較佳係使用添加有不溶化前述基材之溶劑等的溶液。 其次,以著色部之表面平坦化及保護爲目的,亦可因 應必要於著色部表面形成保護層。保護層係使用硬化系樹 脂,主要係使用環氧系或丙烯酸系之樹脂,其厚度通常爲 1 〜1 0μηι 〇 更可依據必要,亦可將由公知之金屬氧化物膜所構成 之透明導電膜形成於著色部或保護層上。例如,可舉出添 加有錫、碲、鎘、鉬、鎢、氟、鋅、鍺或此等氧化物等作 爲雜質之氧化銦、氧化鎘及氧化錫,添加鋁作爲雜質之氧 化鋅,以及氧化鈦等所構成之金屬氧化物膜。其中,亦以 由含有氧化錫2〜15重量%之氧化銦所構成之透明導電 膜,其透明性、導電性優良而可被較佳使用。上述透明導 電膜之膜厚可因應目的之表面電阻而設定,但以 5ηιη~10μιη爲佳。此等透明導電膜亦可藉由濺鍍法、真空 蒸鍍法、離子鍍法及電漿CVD法等而層合於著色部或保 護層上。 爲了使透明導電膜之比電阻在1χ1(Γ3Ω . cm以下,於 基材上成透明導電膜時之基材溫度理想設爲20〜400°C,較 佳設爲180〜3 50°C。 〔開關元件基板〕 開關元件基板係於前述基材之至少一面形成開關元件 而成。 前述開關元件並無特別限制,可舉出薄膜電晶體(TFT) -37- 201206987 元件、MIM(Metal Insulator Metal)元件等。此等之中,由 開關性能優良之觀點,以TFT元件爲佳。 TFT元件亦無特別限制,例如,可舉出由閘電極、源 電極、漏電極及活性層所構成之TFT元件,其藉由以往 公知之方法即可製造。 形成前述TFT元件於前述基材上之方法,例如可舉 出包含以下(1)〜(5)之方法。 (1) 由前述基材上以濺鍍法等形成由金屬或金屬氧化 物等之導電性材料所構成之膜後,施行蝕刻等後設置閘電 極。以濺鍍法等形成由金屬或金屬氧化物等所構成之膜時 之溫度,以150~350°C爲佳,180~300°C爲較佳,220〜 2 6 0 °C爲更佳。 (2) 其次,在設有閘電極之基材上以電漿CVD法等形 成氮化矽膜等之閘絕緣膜。 (3) 並且,在閘絕緣膜上藉由電漿CVD法等形成由有 機半導體等所構成之活性層。 以電漿CVD法等形成閘絕緣膜或有機半導體等之膜 時之溫度,以150~3 50°C爲佳,180〜300°C爲較佳,220~ 260°C爲更佳。 (4) 其次,於活性層之上以濺鍍法等形成由金屬或金 屬氧化物等所構成之膜後施以蝕刻等,而設置源電極及漏 電極*In the above formula (8), 'R5, R6, z, n, e and f are each independently the same as R5, R6, Z, n, e and f in the above formula (3), and the Ra system is independent from the above formula. (6) The same meaning of Ra in the middle. Examples of the compound represented by the above formula (8) include hydrogen waking, resorcin, 2-phenylhydroquinone, 4,4'-biphenol, 3,3,-biphenol, 4,4,-di Hydroxydiphenyl hydrazine, 3,3'-dihydroxydiphenyl hydrazine, 4,4,-dihydroxybenzophenone, 3,3'-dihydroxybenzophenone, 2,2-bis(4-hydroxybenzene) Base) propane, hydrazine-bis(4-hydroxyphenyl)cyclohexane, 2,2-bis(4-hydroxyphenyl^^^ + hexafluoropropene and reactive derivatives thereof, etc. The compound may be used in combination of two or more kinds. Among the above compounds, resorcinol, 4,4,-biphenyl fluorene, -22-201206987 bis(4-hydroxyphenyl)propane, 1,1-double are also used. (4-hydroxyphenyl)cyclohexane, 2,2-bis(4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, preferably by reactivity and mechanical properties In view of the above, 4,4'-biphenol may be suitably used. These compounds may be used in combination of two or more kinds. The above polymer (Π), more specifically, can be synthesized by the method (Γ) shown below. (Γ): reacting the component (B) with an alkali metal compound in an organic solvent to obtain an alkali metal of the component (B) Thereafter, the obtained alkali metal salt is allowed to react with the component (A). Further, the reaction of the component (B) with the alkali metal compound can be carried out in the presence of the component (A), and the alkali metal of the component (B) can also be used. The salt is reacted with the component (A). The alkali metal compound used in the reaction includes alkali metals such as lithium, potassium and sodium; hydrogenated alkali metals such as lithium hydride, potassium hydride and sodium hydride; lithium hydroxide and potassium hydroxide; And an alkali metal hydroxide such as sodium hydroxide; an alkali metal carbonate such as lithium carbonate, potassium carbonate or sodium carbonate; an alkali metal hydrogencarbonate such as lithium hydrogencarbonate, potassium hydrogencarbonate or sodium hydrogencarbonate; and the like. One type or a combination of two or more types of the alkali metal compound is used in the above-mentioned component (B), and the amount of the metal atom in the metal compound is usually 1 to 3 equivalents, preferably 1.1 to 1. 2 times equivalent, more preferably 1.2 to 1.5 times the equivalent amount. For the organic solvent used in the reaction, N,N-dimethylacetamide, N,N-dimethylformamide, N-methyl can be used. -2-pyrrolidone, iota, 3-dimethyl-2-imidazolidinone, γ-butyrolactone 'cyclobutanthene, Athene, diethyl hydrazine, dimethyl hydrazine, diethyl maple, diisopropyl hydrazine, diphenyl hydrazine, diphenyl -23-201206987 ether, benzophenone 'dialkoxy benzene (alkane) The carbon number of the oxy group is 1 to 4) and the trialkoxybenzene (the carbon number of the alkoxy group is 1 to 4), etc. Among these solvents, N-methyl-2-pyrrolidone and N are particularly used. A polar organic solvent having a high dielectric constant such as N-dimethylacetamide, cyclobutyl hydrazine, diphenyl hydrazine, and dimethyl sulfoxide may be suitably used. These may be used alone or in combination of two or more. Further, in the above reaction, benzene, toluene, hydrazine, hexane, cyclohexane, octane, chlorobenzene, dioxane, tetrahydrofuran, anisole and phenethyl ether may be used together with water. Boiling solvent. These may be used alone or in combination of two or more. When the ratio of the component (A) to the component (B) is 100 mol% in total of the component (A) and the component (B), the component (A) is preferably 45 mol% or more and 5 5 mol%. The following is more preferably 50% by mole or more and 5 2% by mole or less, more preferably more than 50% by mole and 52% by mole or less, and the component (B) is preferably 45% by mole or more and 5 5 moles. % or less, more preferably 4 8 mol% or more and 5 mol% or less, more preferably 48 mol% or more and less than 50 mol%. Further, the reaction temperature is preferably in the range of 60 to 25 CTC, more preferably in the range of 80 to 200 t. The reaction time is preferably from 15 minutes to 1 hour, more preferably in the range of from i to 24 hours. [The physical properties of the polymer (I), etc.] The polymer (I) does not require a polyimide polymer. The high temperature treatment for the imidization required for the synthesis is low in the manufacturing process of the polymer, and the polymer can be easily produced. The polymer (I) is a HPC- 8 220 GPC device manufactured by TOSOH-24-201206987 (column: TSKgel α-Μ, developing solvent: tetrahydrofuran (hereinafter also referred to as "THF j"), in terms of polystyrene The weight average molecular weight (Mw) is preferably 5,000 to 500,000, more preferably 15,000 to 400,000, still more preferably 30,000 to 300,000. The thermal decomposition temperature of the polymer (1) measured by thermogravimetric analysis (TGA) is preferably 450 ° C or more, more preferably 475 ° C or more, and more preferably 49 (TC or more. [Method for Producing Substrate] The method for producing the substrate is not particularly limited, and the polymer (I) is contained. a method in which a polymer composition is applied onto a support to form a coating film, and then a substrate is formed on the support by removing an organic solvent from the coating film. By forming the substrate in this manner, it is prevented The molecules of the polymer are oriented in a certain direction, and a substrate having a smaller phase difference can be obtained. The polymer composition can be directly used as a mixture of the polymer (II) obtained by the aforementioned method (Γ) and an organic solvent. Using such a polymer composition The substrate can be easily and inexpensively produced. Further, the polymer composition can also be isolated (purified) by a mixture of the polymer (II) obtained by the above method (Γ) and an organic solvent. After dispersing the solid, it is dissolved in an organic solvent to prepare a polymer composition. The polymer (II) is isolated (purified) into a solid fraction, for example, by reprecipitating the polymer in methanol or the like. In the poor solvent of the polymer -25 to 201206987, the filtration is carried out, followed by drying under reduced pressure, etc. The organic solvent in which the polymer (Π) is dissolved, for example, dichloromethane, tetrahydrofuran or cyclohexanone can be suitably used. N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone and γ-butyrolactone are preferably used as appropriate from the viewpoints of coatability and economy. Dichloromethane, hydrazine, hydrazine-dimethylacetamide, and hydrazine-methylpyrrolidone. These solvents may be used singly or in combination of two or more. The concentration of the polymer in the material varies depending on the molecular weight of the polymer. Usually, it is 5 to 40% by mass, preferably 7 to 25% by mass. If the concentration of the polymer (I) in the polymer composition is within the above range, the pinhole can be easily produced by thick film formation, and The substrate having excellent surface smoothness can be formed. The viscosity of the polymer composition varies depending on the molecular weight or concentration of the polymer, and is usually 2,000 to 10,000,000 mPa·s, preferably 3,000 to 50,0 00 mPa·s. When the viscosity of the polymer composition is within the above range, the composition in the film formation is excellent in retention, and since the thickness is easily adjusted, the substrate is easily formed. Further, the polymer composition may contain an anti-aging agent, and by containing an anti-aging agent, the durability of the obtained substrate can be further improved. The antioxidant is preferably a hindered phenol compound. The hindered phenol-based compound which can be used in the present invention is exemplified by triethylene glycol-bis[3-(3-tert-butyl-5-methyl-4-hydroxyphenyl)propionate], 1,6- Hexanediol-bis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate], 2,4-bis-(n-octylthio)-6-(4 -hydroxy-3,5-di-tert-butylanilino)-3,5-tri-26- 201206987 xiao, pentaerythritol 肆[3-(3,5-tert-butyl-4-ylphenyl) Two acid salts], 1, 1,3-para [2-methyl-4-[3·(3,5-di-tert-butyl-4-hydroxyphenyl)propenyloxy]-5-tert -butylphenyl]butane, 2,2-thio-di-extension ethyl bis[3_(3,5-di-tert-butyl-4-hydroxyphenyl)propionate], octadecyl _ 3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, hydrazine, hydrazine-hexamethylene bis(3,5-di-tert-butyl-4-hydroxy-hydrogen Cinnamylamine, 1,3,5-trimethyl-2,4,6-gin (3,5-di-tert-butyl-4-hydroxybenzyl)benzene, ginseng-(3>5-two -tert-butyl-4-hydroxybenzyl)-trimeric isocyanate, and 3,9-bis[2-[3-(3-tert-butyl-4-hydroxy-5-methylbenzene) Base) propionyloxy]-1,1-dimethylethyl]-2,4,8,10-tetraoxaspiro[5.5]undecane, and the like. When the anti-aging agent is blended with the polymer composition, the amount of the antioxidant is 0.01 to 10 parts by weight based on 1 part by weight of the polymer (1). A method of forming a coating film by applying the polymer composition to a support may be a method using a roll coating method, a gravure coating method, a spin coating method, or a doctor blade coating method. . The thickness of the coating film is not particularly limited, and is, for example, 1 to 25 0 μηι, preferably 2 to 150 μηι, more preferably 5 to 125 μηη β. The support may, for example, be a polyethylene terephthalate (PET) film or a SUS plate. The method for removing the organic solvent from the coating film is not particularly limited, and examples thereof include a method of heating the coating film. The heating condition may be such that the organic solvent can be removed by the coating film, and the support or the polymer may be appropriately determined. For example, the heating temperature is preferably 30 to 300 ° C, and preferably 40 to 250 ° C, 50 °. 23 0 ° C is better. Heating -27- 201206987 The time is preferably 10 minutes to 5 hours. Moreover, the heating can also be carried out by the second stage or more. Specifically, after drying at a temperature of 30 to 80 ° C for 10 minutes to 2 hours, the mixture is further heated at 1 to 250 ° C for 1 minute to 2 hours. Further, it may be dried in a nitrogen atmosphere or under reduced pressure as necessary. Further, when the substrate is produced, a method of removing the coating film by removing the organic solvent from the coating film and then removing the solvent may be mentioned. When the substrate is produced, a substrate having a small heat shrinkage rate can be obtained by containing a baking step. Therefore, a composite having excellent electrical characteristics and reliability can be obtained. In the case of the above-mentioned baking, the coating film formed on the support may be fired together with the support, but the coating film formed on the support may be self-supporting from the viewpoint of not affecting the properties of the support. Peeling, and then burning is preferred. Further, the method of removing the organic solvent from the coating film may be carried out by baking the coating film, and the step of removing the organic solvent may be additionally carried out before the baking step. Further, when the coating film peeled off from the support is fired, it is preferred to previously remove the organic solvent from the coating film before peeling off the coating film from the support. The calcination step is preferably carried out at a specific temperature, and the firing temperature is preferably from 210 ° C to 350 ° C, more preferably from 220 ° C to 3 30 ° C, more preferably 2 3 0°C~3 2 (TC. The firing time is preferably 10 minutes to 5 hours. The firing environment is not particularly limited, and is preferably in the atmosphere or in an inert gas atmosphere, and is particularly suitable in an inert gas atmosphere. The inert gas may, for example, be nitrogen, argon or ammonia from the viewpoint of coloring, but preferably nitrogen. The obtained substrate may be used after being peeled off from the support, or according to the use of the support -28-201206987 The type or the use of the composite may be different, and may be directly used without being peeled off. The thickness of the substrate may be appropriately selected depending on the intended use, and is preferably 1 to 2 50 μm, more preferably 2 to 150 μm. More preferably, it is preferably 10 to 125 μm. In consideration of the phase difference of the substrate and the weight reduction of the display device or the touch panel, the film thickness of the substrate is preferably thin. [Substance property, etc.] The substrate The glass transition temperature (Tg) measured by a Rigaku Corporation Model 8230 DSC measuring device (temperature rising rate 20 ° C / min) was 230. ~3 50 ° C is better, 240 to 3 3 0 ° C is more preferable, 250 ~ 300 〇 C is more preferable. If the substrate has such a glass transition temperature, forming at least one side of the substrate When at least one type of the transparent transparent conductive film, the colored portion, and the switching element are grouped, the protective film made of a transparent resin or the transparent conductive film is formed on the colored portion or the like as desired. Or the heat treatment can be carried out at a high temperature, and the method of forming the member is not limited, and the composite can be easily manufactured. When the thickness of the substrate is 30 μm, the total light transmittance in the JIS K7105 transparency test method is 85. % or more is preferable, and 88% or more is more preferable. The total light transmittance can be measured by using a sigma meter SC-3H (manufactured by Suga Test Machine Co., Ltd.). The substrate is at a thickness of 30 μm, at a wavelength of 400 nm. The light transmittance is preferably 70% or more, more preferably 75% or more, and still more preferably 80% or more. The light transmittance at a wavelength of 400 nm can be used for ultraviolet light and visible points -29 - 201206987 Photometer V-570 (Measured by JASCO). Light penetration of the aforementioned substrate In the above range, since the substrate particularly exhibits high light transmittance, it can be suitably used for a composite of a transparent conductive film, a color filter substrate, a switching element substrate, etc. The substrate has a thickness of 30. When μπι is used, the ΥΙ値 (yellow index) is preferably 3 or less, preferably 2 2 or less, and more preferably 2.0 or less. The ΥI値 system can use the SM-T color measuring device manufactured by Suga Test Machine Co., Ltd. In addition, since the base material which is not easily colored can be obtained in such a range, it can be suitably used for a composite of a transparent conductive film, a color filter substrate, and a switching element substrate. When the thickness of the material is 30 μm, the γ I 値 which is heated in the air at 130 ° C for 1 hour in a hot air dryer is preferably 3.0 or less, more preferably 2.0 or less, and more preferably 2.0 or less. In the above-mentioned range, a substrate which is hard to be colored even at a high temperature can be obtained, and a composite of a transparent conductive film, a color filter substrate, a switching element substrate, and the like excellent in optical characteristics can be obtained. The substrate preferably has a refractive index of 1.55 to 1.75 with respect to light having a wavelength of 63 3 nm, and more preferably has a refractive index of 1.60 to 1.70. The refractive index system can be measured using a 稜鏡 coupler Model 2010 (manufactured by Metricon Co., Ltd.). The tensile strength of the substrate is preferably 50 to 200 MPa, more preferably 80 to 150 MPa. Tensile strength can be measured using a tensile tester 5 5 43 (manufactured by INSTRON Co., Ltd.). The elongation at break of the substrate is preferably from 5 to 100%, and from 15 to 100% is preferably from -30 to 201206987. The elongation at break can be measured using a tensile tester 5543 (manufactured by INSTRON Co., Ltd.). The tensile elastic modulus of the substrate is preferably 2.5 to 4. OGPa, more preferably 2.7 to 3.7 GPa. The tensile modulus of elasticity can be measured using a tensile tester 5 543 (manufactured by INSTRON Co., Ltd.). When the thickness of the substrate is 30 μm, the phase difference (Rth) in the thickness direction is preferably 200 nm or less, more preferably 50 nm or less, and still more preferably 10 nm or less. The phase difference can be measured using a RETS spectroscope manufactured by Otsuka Electronics Co., Ltd. When the substrate has such a low phase difference, the substrate is excellent in optical equivalence, and when the composite having the substrate is used in a touch panel or a display device, it is possible to suitably prevent coloration or drying from appearing on the display surface. Stripes cause a decrease in display quality. Therefore, the composite of the present invention having the above-mentioned substrate can be suitably used for a touch panel or a display device. The substrate has a coefficient of linear expansion of 80 ppm as measured by a SICA-5200 TMA Nading apparatus manufactured by Seiko Instruments. Below / K, it is more preferably 75 ppm / Κ or less. The substrate has a humidity expansion coefficient of preferably 15 ppm / % RH or less, more preferably 12 ppm / % RH or less. The humidity expansion coefficient can be measured using the TMA (SII Nanotechnology, TMA-SS6100) humidity control option. When the expansion coefficient of the substrate is within the above range, the substrate exhibits high dimensional stability (environmental reliability), and can be suitably used for a composite or touch of a transparent conductive film, a color filter substrate, and a switching element substrate. panel. In particular, it can be suitably used in a vehicle-mounted guide that requires high environmental reliability - 31 - 201206987, etc. The heat shrinkage rate of the above substrate in JIS Κ 7133 (heat treatment temperature 220 ° C, 60 minutes) is -0.1 to 0 1%, preferably -0.05 to 0.05%, more preferably -0. 03 to 0. 03%. In addition, the "heat shrinkage ratio" is determined based on JIS Κ 7133. Specifically, the heat treatment is performed by placing the substrate (10 0 mm XI 0 0 mm) of the correct length in advance without stress. Set to a predetermined temperature (220 ° C) in a constant temperature chamber, take it after 60 minutes, and read the change in size after returning to room temperature. And, the length L before heat treatment. The heat shrinkage ratio was determined by the following formula after the heat treatment with the length L. Heat shrinkage ratio = (LQ - L) xl00 / L 〇 (%) In addition, the temperature of the base material is changed to 24 (the same as the above, the heat shrinkage rate is preferably -〇) .2 to 0.2%, more preferably -0.1 to 0.1%, still more preferably -0.05 to 0.05%, particularly preferably -0.03 to 0.03 %. The substrate having a heat shrinkage ratio within the aforementioned range is When a member such as a transparent conductive film, a colored portion, or a switching element is formed on a substrate, even when exposed to a high temperature, the dimensional change is small, and the stress and displacement amount of the member formed by the member are preferably small. <Complex> The composite of the present invention is formed by forming at least one surface selected from the group consisting of a transparent conductive film, a colored portion, and a switching element on at least one surface of the substrate. A transparent conductive film formed by forming at least one surface of the substrate - 32 - 201206987, a transparent conductive film formed on at least one surface of the substrate, and a color filter substrate formed on at least one surface of the substrate Optical component such as a switching element substrate formed by forming a switching element on at least one side [Transparent Conductive Film] The transparent conductive film is formed by forming a transparent conductive film on at least one surface of the substrate. The transparent conductive film is not particularly limited as long as it is transparent and exhibits conductivity, and examples thereof include tin oxide. a metal oxide film composed of indium oxide, cerium oxide, zinc oxide, cadmium oxide, indium tin oxide (ITO) or indium zinc oxide (IZO), or a composite film of such metal oxides as a host, gold, silver A metal film composed of copper, tin, nickel, aluminum, or palladium. The method for forming the transparent conductive film is not particularly limited, and examples thereof include a vacuum vapor deposition method, a sputtering method, an ion plating method, and a CVD method. In the method, it is preferable to form a film by sputtering by the uniformity of the film or the adhesion of the substrate to the film. The temperature at which a film made of a metal or a metal oxide is formed by a sputtering method or the like 150~3 5 0°(: preferably, 180~3 00. (: is preferred, 22 0~2 60 °<: is better. The aforementioned substrate contains the aforementioned polymer (I), and the glass is transferred. The temperature is high. Therefore, even if it is necessary to heat it at such a high temperature The method can also form a transparent conductive film on a substrate to produce a transparent conductive film having high electrical characteristics and high reliability. Moreover, a polythiophene-based or polyaniline-based conductive polymer can also be coated- 33- 201206987 A transparent conductive film is formed on the substrate by film formation. The thickness of the transparent conductive film is preferably 30 A or more, and when it is thinner than this, the specific resistance (volume resistance) is 1 x 1 0_3 Ω·cm or less. However, it is difficult to form a continuous film having good conductivity. The other side, if it is too thick, may cause a decrease in transparency, etc., so it is suitable for a thickness of 50 to 2000 A. These transparent conductive films may be used. It is one layer and can also be composed of multiple layers. When the transparent conductive film is formed on the substrate, the surface of the substrate is subjected to plasma treatment, corona treatment, alkali treatment, coating treatment, etc., from the viewpoint of improving the adhesion between the substrate and the transparent gas barrier film. Surface treatment is preferred. The transparent conductive film may have an anti-reflection film or a hard coat film on at least one side thereof, or may be subjected to an anti-Newton ring treatment. The specific resistance 値 (volume resistance 测定) measured by the low-resistance meter "Loresta-GP" manufactured by Mitsubishi Chemical Corporation is preferably 2 χ 10 _ 3 Ω·cm or less, and more preferably 5 χ 10 _ 4 Ω·cm or less. By setting the specific resistance within the above range, it is possible to obtain a film having excellent conductivity, and since the touch panel containing such a film can respond quickly and accurately even for rapid operation, it is preferable. The composite of the present invention preferably comprises a polarizing plate on at least one surface of the transparent conductive film, and a polarizing plate is laminated on a surface opposite to a surface of the transparent conductive film on which the substrate is laminated. good. The polarizing plate may be a circular polarizing plate or a linear polarizing plate, and when the composite is used for a touch panel, a circular polarizing plate is preferably used because of improved viewing performance. -34- 201206987 The circular polarizing plate is preferably one in which one linear polarizing plate and one or two or more retarding plates are included. The method of laminating the polarizing plate and the transparent conductive film is not particularly limited, and lamination can be carried out using an adhesive or the like which does not impair the effects of the present invention and properties such as a touch panel. [Color filter substrate] The color filter substrate is formed by forming a colored portion on at least one surface of the substrate. The colored portion can be formed on the substrate by a conventionally known method. Specifically, the surface of the substrate is first washed. Next, a black matrix material such as chromium or black resin is formed on one surface of the substrate by sputtering or the like. Thereafter, the surface of the black matrix material film is coated with a photoresist or the like, and if necessary, it is dried, and then exposed and developed using a photomask to pattern the resist. Thereafter, the etching and the peeling of the resist are performed, and the black matrix material remains only in a necessary portion, and the black matrix can be formed by hardening it by heat treatment. The temperature during the heat treatment may be appropriately adjusted depending on the material, preferably 150 to 300 ° C, preferably 180 to 2 50 ° C, more preferably 220 ° C or more. Next, coloring portions of respective colors such as red, green, and blue (RGB) are formed. For example, when a red colored portion is formed, a red pigment material is applied and a red pigment material film is obtained by prebaking. Next, the surface of the red pigment material film is coated with a photoresist, and if necessary, it is dried, and then exposed, developed, and patterned with a reticle. -35- 201206987 Thereafter, etching and resist stripping are performed and left in the necessary part, and the temperature during heat treatment by heat treatment is preferably 150 to 300 ° C depending on the material used, 180 to 250 ° C Preferably, the colored portions of the remaining colors such as color and blue may be formed. Further, the red color pigment material is simultaneously applied to the black matrix, and the base material can be formed in the same manner. Since the base material has high heat resistance, the color pigment materials are sufficiently cured. Therefore, the color filter substrate can be fine. In addition to the method of resisting the pattern of the black matrix or the colored portions of the respective colors, it is also possible to use a matrix material or a coloring material of each color, and a method of resisting the touch pattern is not used. Further, the black matrix can be directly performed by a printing method such as screen printing. Further, as a black matrix material, a metal of each color, and a black material such as carbon black or the like, an acrylic resin, an epoxy resin, or a mixture is exhibited. As the photoresist material, a resin such as an acrylic resin or an amine resin, a matrix material of any additive additive, a coloring matter material and a photoresist material i are used, and the red pigment material is only left to be cured, and the red colored portion is cured. The material is suitable for adjustment, and it is more preferably 220 ° C or more. Green repeats the same operation for each color shader such as green or blue (RGB). A black matrix material or a high-contrast and high-formation method can be used, in addition to using a photosensitive black moment, and directly using a photomask to perform brushing, gravure printing, and ink-jet or color-colored portions of the coloring matter. An epoxy resin such as a red, green or blue color polyimine resin or a polybenzazole mixture or the like is used. From the viewpoint of applicability, from -36 to 201206987, it is preferred to use a solution to which a solvent or the like which does not dissolve the substrate is added. Next, for the purpose of flattening and protecting the surface of the colored portion, it is also necessary to form a protective layer on the surface of the colored portion. The protective layer is a hardened resin, and an epoxy-based or acrylic-based resin is used mainly, and the thickness thereof is usually from 1 to 10 μm. Further, a transparent conductive film composed of a known metal oxide film may be formed as necessary. On the coloring or protective layer. For example, indium oxide, cadmium oxide, and tin oxide to which tin, antimony, cadmium, molybdenum, tungsten, fluorine, zinc, antimony or the like are added as impurities, zinc oxide to which aluminum is added as an impurity, and oxidation may be mentioned. A metal oxide film composed of titanium or the like. Among them, a transparent conductive film made of indium oxide containing 2 to 15% by weight of tin oxide is preferably used because of its excellent transparency and electrical conductivity. The film thickness of the transparent conductive film can be set in accordance with the surface resistance of the object, but it is preferably 5ηιη to 10μηη. These transparent conductive films may be laminated on the colored portion or the protective layer by a sputtering method, a vacuum deposition method, an ion plating method, a plasma CVD method, or the like. In order to make the specific resistance of the transparent conductive film to be 1 χ 1 (Γ3 Ω·cm or less, the substrate temperature when forming a transparent conductive film on a substrate is desirably 20 to 400 ° C, preferably 180 to 3 50 ° C. Switching element substrate] The switching element substrate is formed by forming a switching element on at least one surface of the substrate. The switching element is not particularly limited, and examples thereof include a thin film transistor (TFT) -37 - 201206987 element, and MIM (Metal Insulator Metal) Among these, a TFT element is preferable from the viewpoint of excellent switching performance. The TFT element is not particularly limited, and examples thereof include a TFT element composed of a gate electrode, a source electrode, a drain electrode, and an active layer. The method for forming the TFT element on the substrate is, for example, a method comprising the following (1) to (5). (1) Splashing from the substrate After forming a film made of a conductive material such as a metal or a metal oxide, a gate electrode is formed by etching or the like, and a temperature of a film made of a metal or a metal oxide is formed by a sputtering method or the like. At 150~350 °C Preferably, 180 to 300 ° C is preferable, and 220 to 2 60 ° C is more preferable. (2) Next, a gate insulating film such as a tantalum nitride film is formed by a plasma CVD method or the like on a substrate provided with a gate electrode. (3) Further, an active layer made of an organic semiconductor or the like is formed on the gate insulating film by a plasma CVD method or the like. The temperature at which a film such as a gate insulating film or an organic semiconductor is formed by a plasma CVD method or the like is used. It is preferably 150 to 3 50 ° C, preferably 180 to 300 ° C, and more preferably 220 to 260 ° C. (4) Secondly, a metal or metal oxide is formed by sputtering or the like on the active layer. After the film is formed by etching or the like, the source electrode and the drain electrode are disposed*

(5) 最後因應必要以電漿CVD法等在源電極或漏電極 上形成氮化矽膜等,藉由使其成爲保護膜,而可形成TFT -38- 201206987 元件。 以上說明底部閘極型之TFT元件,但前述TFT元件 並不受限於此構造,其亦可爲頂部閘極型。 前述基材由於高耐熱性,故可以上述所期望之溫度形 成閘電極、源電極、漏電極及活性層等。因此,可製造具 有高解像度、極細階調表現、高對比及高精細度之開關元 件基板。 閘電極、源電極、漏電極只要係以導電性材料可形成 者則無特別限制。導電性材料可舉出金屬或金屬氧化物 金屬之例可舉出鈾、金、銀、鎳、鉻、銅、鐵、錫、 銻、鉛、鉬、銦、鋁、鋅、鎂、及此等之合金,金屬氧化 物之例可舉出 ITO、IZO、ZnO、In-Ga-Zn〇4 及 Ιη203。 除此以外,若考量到與基材之接著性,亦可使用導電 性聚合物作爲前述導電性材料。 此等之中’亦以由於使用金屬氧化物而可形成透明電 極,故爲佳。 前述活性層藉由任意之材料形成即可,但以介電率 高、導電性低者爲佳。形成此般活性層之材料,例如,可 舉出非晶矽、多結晶矽、CdS、GaS、ZnS、CdSe、CaSe、 ZnSe、CdTe、SiC及Si等之無機半導體;聚噻吩及其衍 生物、聚對苯撐亞乙烯及其衍生物、聚對苯撐及其衍生 物、聚莽及其衍生物、聚噻吩亞乙烯及其衍生物、聚噻 吩-雜環芳香族共聚合物及其衍生物' 稠五苯、稠四苯以 -39- 201206987 及萘等之寡并苯(oligoacene)及此等之衍生物、α-6-噻吩以 及α-5 -噻吩等之寡噻吩及此等之衍生物、酞花青及其衍生 物、焦蜜石酸二酐或焦蜜石酸二醯亞胺及此等之衍生物、 茈四羧酸二酐或茈四羧酸二醯亞胺及此等之衍生物等之有 機半導體。 前述閘絕緣膜之形成中可使用無機物及/或有機物。 無機物可舉出如 Si3N4、Si02、SiNx、Α12〇3、Ti02、 Ta205、Hf02、Zr02、BST(鈦酸鋇緦)、及ΡΖΤ(鈦酸銷酸 鉛)等,有機物可舉出一般泛用高分子(聚甲基丙烯酸甲酯 樹脂、聚苯乙烯樹脂)、具有酚基之高分子衍生物、丙烯 酸系高分子、醯亞胺系高分子、芳基醚系高分子、醯胺系 高分子、氟系高分子、乙烯醇系高分子及此等之摻合物 等。又,作爲閘絕緣膜亦可使用無機-有機積層膜。 尙且,在前述基材上與形成有TFT元件之面之相反 側之面上,爲了防止水分通過基材而滲入TFT元件,亦 可設置阻隔層。 前述阻隔層並無特別限制,可舉出複合有無機物層與 聚合物層之層。 無機物層可舉出由金屬氧化物、金屬氮化物、金屬碳 化物及金屬氧氮化物等所構成之層。金屬氧化物可舉出氧 化矽、氧化鋁、氧化鈦、氧化銦、氧化錫及氧化銦錫等。 金屬氮化物可舉出氮化鋁及氮化矽等,金屬碳化物可舉出 碳化矽等,金屬氧氮化物可舉出氧氮化矽等。此般無機物 層可以蒸鍍法進行成膜。 -40- 201206987 前述MIM元件只要係於金屬間設有絕緣層之二極體 則無特別限制,藉由以往公知之方法而可製造。 形成前述MIM元件於前述基材上之方法,例如可舉 出包含以下(1)~(3)之方法。 (1)於前述基材上以濺鍍法等形成由金屬或金屬氧化 物等所構成之膜後施以蝕刻等而設置電極。(2)其次,於 設有電極之基材上以電漿CVD法等形成氮化矽膜等之絕 緣層。(3)其後,於絕緣層之上以濺鍍法等形成金屬或金 屬氧化物等之膜後施以蝕刻等而設置電極。 前述金屬之例可舉出鉑、金、銀、鎳、鉻、銅、鐵、 錫、銻鉛、鉬、銦、鋁、鋅、鎂、及此等之合金,金屬氧 化物之例可舉出ITO、IZO、ZnO及Ιη203。除此以外,若 考慮到與基材之接著性,亦可使用導電性聚合物作爲前述 導電性材料。 此等之中,亦以由於使用金屬氧化物而可形成透明電 極,故爲佳。 《顯示裝置》 本發明之顯示裝置係以含有前述本發明之複合物爲其 特徵。因此,可得到顯示特性優良之顯示裝置。又,可得 到顯示面上不易出現著色或干渉條紋之顯示裝置。 顯示裝置例如可舉出觸控面板、行動電話、電子情報 終端、呼叫器、導航器、車載用液晶顯示器、液晶螢幕、 調光面板、OA機器用顯示器及AV機器用顯示器等之各 種液晶顯示裝置。 -41 - 201206987 &lt;&lt;觸控面板&gt;&gt; 本發明之觸控面板係含有前述複合物而成者,較佳爲 含有前述透明導電性薄膜而成者》 此觸控面板例如可舉出含有前述透明導電性薄膜,與 該薄膜之透明導電膜中保有空隙而對向之透明導電膜的觸 控面板。 觸控面板在前述透明導電性薄膜之至少一面上若含有 具有偏光板之複合物時,因可成爲來自日光或螢光燈等之 外部之光之反射光量受到抑制之低反射觸控面板,故爲 佳。 觸控面板本質上係由此等要素所成,但實際上爲了實 現觸控面板之動作,尙會使用支持透明導電膜之構件或塗 覆材、形成空隙之間隔物等。而支持透明導電膜之構件必 須有受到控制之光學特性,故由本發明所用之前述聚合物 所構成之構件等極爲合適。 [實施例] 以下,藉由實施例具體地說明本發明。 (1) 構造分析 由下述實施例及比較例所得之聚合物之構造分析係藉 由 IR(ATR 法、FT-IR,6700、NICOLET 公司製)及 NMR(ADVANCE500 型、BRUKAR 公司製)而施行。 (2) 重量平均分子量(Mw)、數平均分子量(Mw)及分子 量分布(Mw / Μη) -42- 201206987 由下述實施例及比較例所得之聚合物之重量平均分子 量(Mw) '數平均分子量(Mw)及分子量分布(Mw/Mn)係使 用 TOSOH 製 HLC-8220 型 GPC 裝置(管柱: TSKgela — M、展開溶劑:THF)而測定。 (3) 玻璃轉移溫度(Tg) 由下述實施例及比較例所得之聚合物或評價用薄膜之 玻璃轉移溫度係使用Rigaku公司製823 0型DSC測定裝 置,在昇溫速度20°C/min下進行測定。 (3’)熱分解溫度 由下述實施例及比較例所得之聚合物之熱分解溫度係 藉由熱重量分析法(TGA:氮環境下、昇溫速度10°C/ 分、5%重量減少溫度)而測定。 (4) 機械性強度 由下述實施例及比較例所得之評價用薄膜之室溫下之 拉伸強度 '裂斷伸長、拉伸彈性模數係使用拉伸試驗機 5543(INSTRON公司製),依據JIS K7127而測定。 (5) 環境安定性 由下述實施例及比較例所得之評價用薄膜之線膨脹係 數係使用Seiko Instruments公司製SSC-5200型TMA測 定裝置而測定。自室溫昇溫至2 80°C後’由以3°C/ min降 溫時之2 0 0〜1 0 0 °C下之梯度算出線膨脹係數。 又,由下述實施例及比較例所得之評價用薄膜之濕度 膨脹係數係使用 TMA(SII Nanotechnology公司製、丁1^八- SS6 10 0)濕度控制選項以下述條件實施測定。 -43- 201206987(5) Finally, a tantalum nitride film or the like is formed on the source electrode or the drain electrode by a plasma CVD method or the like, and a TFT-38-201206987 element can be formed by forming a protective film. The bottom gate type TFT element has been described above, but the above TFT element is not limited to this configuration, and may be of the top gate type. Since the substrate has high heat resistance, the gate electrode, the source electrode, the drain electrode, the active layer, and the like can be formed at the desired temperature. Therefore, a switch element substrate having high resolution, extremely fine tone performance, high contrast, and high definition can be manufactured. The gate electrode, the source electrode, and the drain electrode are not particularly limited as long as they are formed of a conductive material. Examples of the conductive material include a metal or a metal oxide metal, and examples thereof include uranium, gold, silver, nickel, chromium, copper, iron, tin, antimony, lead, molybdenum, indium, aluminum, zinc, magnesium, and the like. Examples of the alloy and the metal oxide include ITO, IZO, ZnO, In-Ga-Zn〇4, and Ιη203. In addition, a conductive polymer may be used as the conductive material in consideration of adhesion to a substrate. Among these, it is preferable that a transparent electrode can be formed by using a metal oxide. The active layer may be formed of any material, but it is preferably one having a high dielectric constant and low conductivity. Examples of the material for forming the active layer include inorganic semiconductors such as amorphous germanium, polycrystalline germanium, CdS, GaS, ZnS, CdSe, CaSe, ZnSe, CdTe, SiC, and Si; and polythiophene and derivatives thereof. Poly(p-phenylene vinylene) and its derivatives, polyparaphenylene and its derivatives, polyfluorene and its derivatives, polythiophene vinylene and its derivatives, polythiophene-heterocyclic aromatic copolymers and derivatives thereof 'Fused pentene, condensed tetraphenyl with -39-201206987 and naphthalene and other oligoacene and derivatives thereof, α-6-thiophene and α-5-thiophene and other oligothiophenes and derivatives thereof , phthalocyanine and its derivatives, pyromellitic dianhydride or dimethymine pyromide and derivatives thereof, perylenetetracarboxylic dianhydride or ruthenium tetracarboxylic acid diimine and such An organic semiconductor such as a derivative. An inorganic substance and/or an organic substance can be used for the formation of the above-mentioned gate insulating film. Examples of the inorganic substance include Si3N4, SiO2, SiNx, Α12〇3, TiO2, Ta205, Hf02, Zr02, BST (barium titanate), and strontium (lead titanate), and the organic substance can be generally used in general. Molecular (polymethyl methacrylate resin, polystyrene resin), polymer derivative having phenol group, acrylic polymer, quinone imine polymer, aryl ether polymer, guanamine polymer, A fluorine-based polymer, a vinyl alcohol-based polymer, and the like. Further, as the gate insulating film, an inorganic-organic laminated film can also be used. Further, a barrier layer may be provided on the surface of the substrate opposite to the surface on which the TFT element is formed, in order to prevent moisture from penetrating into the TFT element through the substrate. The barrier layer is not particularly limited, and a layer in which an inorganic layer and a polymer layer are combined may be mentioned. The inorganic layer may be a layer composed of a metal oxide, a metal nitride, a metal carbide, a metal oxynitride or the like. Examples of the metal oxide include cerium oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, and the like. Examples of the metal nitride include aluminum nitride and tantalum nitride, and metal carbides include barium carbide and the like. Examples of the metal oxynitride include barium oxynitride. Such an inorganic layer can be formed by vapor deposition. -40-201206987 The above-mentioned MIM element is not particularly limited as long as it is a diode provided with an insulating layer between the metals, and can be manufactured by a conventionally known method. The method of forming the MIM element on the substrate may, for example, be a method comprising the following (1) to (3). (1) A film made of a metal or a metal oxide or the like is formed on the substrate by a sputtering method or the like, and then an electrode is provided by etching or the like. (2) Next, an insulating layer such as a tantalum nitride film is formed on the substrate on which the electrode is provided by a plasma CVD method or the like. (3) Thereafter, a film of a metal or a metal oxide or the like is formed on the insulating layer by sputtering or the like, and then an electrode is provided by etching or the like. Examples of the metal include platinum, gold, silver, nickel, chromium, copper, iron, tin, antimony, molybdenum, indium, aluminum, zinc, magnesium, and the like. Examples of the metal oxide include a metal oxide. ITO, IZO, ZnO, and 203η203. In addition to this, a conductive polymer may be used as the conductive material in consideration of adhesion to a substrate. Among these, it is preferable to form a transparent electrode by using a metal oxide. <<Display device>> The display device of the present invention is characterized by containing the composite of the present invention described above. Therefore, a display device having excellent display characteristics can be obtained. Further, a display device in which coloring or dry streaks are less likely to occur on the display surface can be obtained. Examples of the display device include various liquid crystal display devices such as a touch panel, a mobile phone, an electronic information terminal, a pager, a navigator, a vehicle liquid crystal display, a liquid crystal screen, a dimming panel, an OA device display, and an AV device display. . -41 - 201206987 &lt;&lt;Touch Panel&gt;&gt; The touch panel of the present invention is composed of the above-mentioned composite, and preferably includes the transparent conductive film. A touch panel including the transparent conductive film and a transparent conductive film that is opposed to the transparent conductive film of the film and that faces the transparent conductive film. When the touch panel includes a composite having a polarizing plate on at least one surface of the transparent conductive film, the low-reflection touch panel can suppress the amount of reflected light from the outside of sunlight or a fluorescent lamp. It is better. The touch panel is essentially formed by such elements, but in practice, in order to realize the operation of the touch panel, a member supporting the transparent conductive film or a coating material, a spacer for forming a void, or the like is used. Further, since the member supporting the transparent conductive film must have controlled optical characteristics, the member composed of the polymer used in the present invention is extremely suitable. [Examples] Hereinafter, the present invention will be specifically described by way of examples. (1) Structural analysis The structural analysis of the polymer obtained by the following examples and comparative examples was carried out by IR (ATR method, FT-IR, 6700, manufactured by NICOLET) and NMR (ADVANCE500 type, manufactured by BRUKAR). . (2) Weight average molecular weight (Mw), number average molecular weight (Mw), and molecular weight distribution (Mw / Μη) -42 - 201206987 Weight average molecular weight (Mw) of the polymer obtained by the following Examples and Comparative Examples The molecular weight (Mw) and the molecular weight distribution (Mw/Mn) were measured using a HLC-8220 GPC apparatus (column: TSKgela-M, developing solvent: THF) manufactured by TOSOH. (3) Glass transition temperature (Tg) The glass transition temperature of the polymer or the evaluation film obtained in the following Examples and Comparative Examples was a 823 0 type DSC measuring apparatus manufactured by Rigaku Co., Ltd. at a temperature rising rate of 20 ° C/min. The measurement was carried out. (3') Thermal decomposition temperature The thermal decomposition temperature of the polymer obtained by the following Examples and Comparative Examples was by thermogravimetric analysis (TGA: nitrogen atmosphere, temperature increase rate 10 ° C / min, 5% weight reduction temperature) ) and measured. (4) Mechanical strength The tensile strength at room temperature, the elongation at break, and the tensile modulus of elasticity of the film for evaluation obtained in the following Examples and Comparative Examples were measured by a tensile tester 5543 (manufactured by INSTRON Co., Ltd.). It was measured in accordance with JIS K7127. (5) Environmental stability The linear expansion coefficient of the film for evaluation obtained in the following examples and comparative examples was measured using a SBA-5200 type TMA measuring apparatus manufactured by Seiko Instruments. After the temperature was raised from room temperature to 2 80 ° C, the linear expansion coefficient was calculated from the gradient at 200 ° to 10 ° C when the temperature was lowered at 3 ° C / min. Further, the humidity expansion coefficients of the films for evaluation obtained in the following examples and comparative examples were measured under the following conditions using a humidity control option of TMA (manufactured by SII Nanotechnology Co., Ltd., D.8-SS6 10 0). -43- 201206987

濕度條件:40%RH至70%RH中以每10%RH變更濕 度(拉伸法:加重5g) 溫度:23〇C (6) 光學特性 由下述實施例及比較例所得之評價用薄膜,其全光線 穿透率及YI値係依據JIS K7 105透明度試驗法而測定。 具體而言,評價用薄膜之全光線穿透率係使用須賀試驗機 公司製SC-3H型霾度計,YI値係使用須賀試驗機公司製 SM-T型色彩測定器而測定(加熱前YI)。 又,將由下述實施例及比較例所得之評價用薄膜以熱風 乾燥機在大氣中以23 0°C進行加熱1小時後之YI値,係 使用須賀試驗機公司製SM-T型色彩測定器而測定(加熱 後 YI)。 由下述實施例及比較例所得之評價用薄膜之在波長 400nm中之光線穿透率係使用紫外線•可見分光光度計 V-570(JASCO公司製)而測定。 由下述實施例及比較例所得之評價用薄膜之位相差 (Rth)係使用大塚電子公司製RETS分光器而測定。尙且, 測定時之基準波長爲5 89nm,位相差之評價膜厚係以規格 化至30μπι之値表示。 由下述實施例及比較例所得之評價用薄膜之折射率係 使用稜鏡耦合器 Model 2010(MetriC〇n公司製)而測定。 尙且,折射率係使用波長633nm而測定》 (7) 比電阻値 使用三菱化學(股)製之低電阻値計「Loresta-GP」而 44 - 201206987 測定下述由實施例及比較例所得之透明導電性薄膜之透明 導電膜之比電阻値(Ω· cm) (8)濾色器基板之評價 將下述實施例及比較例所得之評價用薄膜切成1 〇cm X 10cm方形,對兩面使用直流(DC)磁控管濺鎪裝置,以Si 爲標鈀材料而形成膜厚0.2 μηι之氧化矽膜。並且,對與該 薄膜之形成有氧化矽膜之面相反之面使用濺鍍裝置,以鉻 爲標鈀材料而形成鉻膜,接著使用正型感光性樹脂組成 物’藉有曝光後、顯像而形成既定形狀之黑色矩陣。 其次,將顏料系彩色抗蝕(商品名「JCRRED689」 JSR(股)製)藉由旋轉塗佈器進行塗布在形成有既定形狀之 黑色矩陣之薄膜上,並於加熱板上以9(TC進行150秒鐘預 烘烤而形成塗膜》其後,經由既定之圖型遮罩,使用曝光 機 CanonPLA501F(Kanon(股)製),將 ghi 線(波長 436nm、 405nm、365nm之強度比=2.7 : 2.5 : 4.8)以i線換算爲 2,000J/ ra2之曝光量進行照射,其次,使用〇.〇5重量%氫 氧化鉀水溶液進行顯像,並以超純水潤洗60秒鐘後,更 再烤箱中以23 0 °C進行30分間加熱處理,而形成紅色著色 部。除了取代作爲顏料系彩色抗蝕之JCRRED689,而使 用 JCRGREEN706(JSR(股)製)及「CR8200B」(JSR(股)製) 以外’同樣地進行分別形成綠及藍色著色部後得到濾色器 基板。3色之條紋狀著色部之條紋寬爲1 〇〇μιη,條紋間隔 爲 2 0 μιη 〇 且,所得之濾色器基板之像素之色度係以色彩分析計 -45- 201206987 MCPD2000(大塚電子(股)製)進行測定,依據下述之基準進 行評價。 以上述方法所得之濾色器基板,與以上述方法同樣於玻 璃基板上所形成之附濾色器之玻璃基板之色差(ΔΕ),在 紅、綠、藍之著色部各自之部分皆未滿5時爲「〇」,在 紅、綠、藍之各自之部分有任一者爲5以上時爲「x」^ (9)開關元件基板之外觀 以目視觀察由下述實施例及比較例所得之開關元件基 板之外觀。 [實施例1] 對3L之四頸燒瓶添加(A)成分:2,6-二氟苯甲腈(以下 亦稱爲「DFBN」)35.12g(0.253mol)、(B)成分:9,9-雙(4-羥基苯基)莽(以下亦稱爲「BPFLj )70.08g(0_200mol)、及 間苯二酚(以下亦稱爲「RES」)5.51g(0.050mol)、碳酸鉀 41.46g(0.300mol)、N,N-二甲基乙醯胺(以下亦稱爲 「DMAc」)443g及甲苯lllg。其後,對四頸燒瓶裝設溫 度計、攪拌機、附氮導入管之三通閥、Dean-Stark管及冷 卻管。 其次,將燒瓶內以氮取代後,使所得之溶液以1 40°C 反應3小時,並將生成之水隨時由Dean-Stark管去除。 直至未發現水之生成時,使溫度徐徐上升至1 60°C,並直 接以此溫度使其反應6小時》 冷卻至室溫(2 5 )後,將生成之鹽以濾紙除去,並將 -46- 201206987 濾液投入甲醇中使其再沈澱,藉過濾分離將過濾物(殘渣) 單離。將所得之經過濾物在60°C中真空乾燥一晚,而得到 白色粉末(聚合物)(收量95.67g、收率95%)。 將所得之聚合物之物性表示於表1。並測定所得之聚 合物之構造分析及重量平均分子量。其結果,紅外吸收光 譜之特性吸收爲 SiUScnr^C-H伸縮)、 1 574CHT1、1 499CHT1(芳香環骨架吸收)、1 240(:11^(-0-), 而重量平均分子量1 30,000。 其次,使所得之聚合物再溶解於DM Ac中而得到聚合 物濃度20質量%之聚合物組成物。在由聚對酞酸乙二酯 (PET)所構成之基板上使用刮刀塗佈進行塗布該聚合物組 成物,以70°C使其乾燥30分,接著以100°C乾燥30分而 作成薄膜後,自PET基板剝離。其後,將薄膜固定於金 型上,並以23 0°C乾燥2小時,而得到膜厚30μιη之評價 用薄膜(基材)。 將所得之評價用薄膜之物性表示於表1。 更進一步,使用濺鍍裝置,在氬環境下23 0°C、5分 間之成膜條件下,所得之評價用薄膜之單面形成透明導電 膜。尙且,標鈀材料係使用ITO。所得之透明導電性薄膜 之比電阻値爲2χ10·4(Ω . cm)。 又,於所得之評價用薄膜上,以濺鑛法在230°C之條 件下將厚度300nm之鉻膜予以成膜後,進行蝕刻而形成 既定形狀之閘電極。其次,在薄膜之形成有閘電極之面 上,藉由電漿CVD法在230°C之條件下形成厚度300nm -47 - 201206987 之氮化矽膜,並將其作爲閘絕緣膜。其後,在薄膜之形成 有閘絕緣膜之面上,藉由電漿CVD法在23 0°C之條件下將 厚度120nm之高電阻非晶矽膜予以成膜,並於其之上成 膜厚度3 Onm之低電阻非晶矽膜。其次,藉由對所得之低 電阻非晶矽膜施行乾式蝕刻而得到既定形狀之矽膜。其 後,在薄膜之形成有矽膜之面上以濺鍍法在23 0 °C之條件 下形成厚度40nm之鉻膜後,進行蝕刻並形成源電極及漏 電極。其次,藉由乾式蝕刻,去除源電極與漏電極之間之 低電阻非晶矽膜。其次,在薄膜之形成有源電極及漏電極 之面上,以電漿CVD法將厚度500nm之氮化矽膜予以成 膜後,藉由施行乾式蝕刻而形成既定形狀之保護膜(絕緣 膜)。 經過以上之步驟,而得到在評價用薄膜上形成有非晶 矽薄膜電晶體元件之開關元件基板。以目視觀察所得之開 關元件基板之基材之外觀時,無基材之變形,且爲無色透 明。 [實施例2] 除取代 RES而使用了 2,2-雙(4-羥基苯基)丙烷 11.41g(0.050mol)以外,與實施例1同樣地進行。而所得 之聚合物、評價用薄膜、透明導電性薄膜、濾色器基板及 開關元件基板之物性係如表1所示。 [實施例3] -48- 201206987 除了取代作爲(B)成分之BPFL 70.08g及RES 5.51g 而使用了8?卩1^78.84§(0.2251«〇1)及2,2-雙(4-羥基苯基)-1,1,1,3,3,3-六氟丙烷8.418(0.025111〇1)以外’與實施例 1 同樣地進行。而且所得之聚合物、評價用薄膜、透明導電 性薄膜、濾色器基板及開關元件基板之物性係如表1所 示。 [實施例4] 除取代作爲(B)成分之BPFL70.08g及RES5.51而使用 了 9,9-雙(3-苯基-4-羥基苯基)茜1 25.65 g(0.250mol)以外, 與實施例1同樣地進行。且所得之聚合物、評價用薄膜、 透明導電性薄膜、濾色器基板及開關元件基板之物性係如 表1所示。 [實施例5] 除取代作爲(B)成分之BPFL70.08g及RES5.51g而使 用了 BPFL87.60g (0.2 50mol)以外,與實施例1同樣地進 行。而所得之聚合物、評價用薄膜、透明導電性薄膜、濾 色器基板及開關元件基板之物性係如表1所示。 [實施例6] 除取代作爲(B)成分之BPFL70.08g及RES5.51g而使 用了 BPFL7 8.84g (0.225mol)及1,1·雙(4-經基苯基)環己烷 6_71g(0.025mol)以外,與實施例1同樣地進行。而所得之 -49- 201206987 聚合物、評價用薄膜、透明導電性薄膜、濾色器基板及開 關元件基板之物性係如表1所示。 [實施例7] 除取代作爲(A)成分之 DFBN35.12g而使用了 DFBN28. 1 0g (0.202mol)及 4,4-二氟二苯甲酮 11.02g (0.051mol)以外,與實施例5同樣地進行。而所得之聚合 物、評價用薄膜、透明導電性薄膜、濾色器基板及開關元 件基板之物性係如表1所示。 [實施例8] 除將(A)成分之配合量變更爲DFBN17.56g (0.126mol) 及4,4-二氟二苯甲酮27.55g (0.126mol)以外,與實施例7 同樣地進行。而所得之聚合物、評價用薄膜、透明導電性 薄膜、濾色器基板及開關元件基板之物性係如表1所示。 [實施例9] 除使用 4,4-二氟二苯颯(〇?〇3)63.568(0.25 0111〇1)作爲 (A)成分以外,與實施例5同樣地進行。而所得之聚合 物、評價用薄膜、透明導電性薄膜、濾色器基板及開關元 件基板之物性係如表1所示。 [比較例1] 除取代作爲(B)成分之BPFL70.08g及RES5.51g而使 -50- 201206987 用了2,2-雙(4-羥基苯基)-1,1,1,3,3,3-六氟丙烷84,〇68 (0.250mol)以外,與實施例1同樣地得到聚合物與評價用 薄膜。而所得之聚合物及評價用薄膜之物性係如表丨所 示。 並且,使用濺鍍裝置,在氬環境下以1 50°C、5 &amp;胃 之成膜條件下於所得之評價用薄膜之單面形成透明_電 膜。尙,標鈀材料係使用ITO。所得之透明導電性薄膜之 比電阻値爲5χ1(Γ3(Ω . cm)。尙且,若將成膜溫度與實施 例1同樣設成23 0°C時,因薄膜變形而並未形成均句之透 明導電膜。 又,濾色器基板之評價由於在著色部形成時因薄膜變 形、溶融而無法實施。 並且,使用所得之評價用薄膜,試圖與實施例1同樣 地形成非晶砂薄膜電晶體元件,但因薄膜變形而無法製造 開關元件基板。 [比較例2 ] 使用帝人(股)製之聚萘二甲酸乙二酯薄膜:Neotex, 且評價係與實施例1同樣之方法施行(膜厚125μηι)。且評 價用薄膜之物性係如表1所示。 並且,使用濺鍍裝置,在氬環境下150°C、5分間之 成膜條件下於上述評價用薄膜之單面形成透明導電膜。 尙,標鈀材料係使用IT0。所得之透明導電性薄膜之比電 阻値爲7χ10·3(Ω . cm)。尙且,若將成膜溫度與實施例1 -51 - 201206987 同樣設成230°C時,因膜變形而並未形成均勻之透明導電 膜。 又,濾色器基板之評價由於在著色部形成時因薄膜變 形、溶融而無法實施。 並且,使用所得之評價用薄膜,試圖與實施例1同樣 地形成非晶矽薄膜電晶體元件,但因薄膜變形而無法製造 開關元件基板。 [比較例3] 對裝有溫度計、攪拌機、氮導入管及冷卻管之3 OOmL 之四頸燒瓶添加 2,2_雙[4-(4-胺基苯氧基)苯基]丙烷 9.70g(23.6mmol)。其次,將燒瓶內以氮取代後,加入N-甲基-2_吡咯啶酮(NMP) (6 0ml)並攪拌至均勻爲止。在室溫 中對所得之溶液添加 2,3,5-三羧基環戊基乙酸二酐 5.30g(23.6mmol),並直接以此溫度持續攪拌12小時使其 反應,而得到含有聚醯胺酸之溶液。 對所得含有聚醯胺酸之溶液加入NMP(75ml)而稀釋 後,添加吡啶(7.5ml)及無水乙酸(6.7ml),以110°C攪拌6 小時而實行醯亞胺化。其後,冷卻至室溫後,投入大量甲 醇,藉由過濾分離將已過濾物予以單離。使所得之過濾物 6 0°C中真空乾燥一晚,而得到白色粉末(聚合物)(收量 13.5g、收率 95.3%) » 其次,使所得之聚合物再溶解於DMAc,而得到20 質量%之聚合物溶液。在由PET所構成之基板上使用刮刀 -52- 201206987 塗佈(100 μιη間隔)塗布該聚合物溶液, 3〇分’接著以150°C乾燥60分而作成薄 板剝離。其後,使薄膜再以3 50°C乾燥3 厚30μιη之評價用薄膜。除使用此評價月 施例1同樣之方法進行。且所得之聚合衫 透明導電性薄膜、濾色器基板及開關元付 表1所示。 i 100°C使其乾燥 膜後,自PET基 小時,而得到膜 丨薄膜以外,與實 丨、評價用薄膜、 :基板之物性係如 -53- 201206987 !&amp; rrrt S 瑟4 4£ S: . p 5: i 1箬 Bt* fit» : m m Μ S S «3 4&amp; m m m m p 1 · 塊 i &lt;a] 暴瓶 1« i 1 1震養 盟鑒i i 1 &gt; vs、 &gt; f 明8 &amp; C mm 。 &gt; ο ο ο 〇 O 〇 o 〇 . 1 X 義 s? 1 靈II .t -t' XXX ι ra cm 1111 X X X X ea οα •t 9C X ea «η 1 Ts X X r— 〇nj 要 I &gt; E B 户令 CO &lt; 3 3 S : 60 e co 、;0)«·!巧 r* 〇4 Sa 33 —:珐 :_ i m E弓 § a; κ. J 3&gt; co t— σ&gt; 3 3 3 5 5 § 蠢:! · 1 1 · &lt; Mill § •芸 m 袖· i 运马月 : a co ^ u&gt; ^ «R «» «R e co •^: CO c? *R辑 II s s 〇&gt; CO CQ c OO OO CO o &gt; CO CO 133 o CO c〇 〇〇 S3 &amp; S ii s s S这S ΐ t u&gt; «〇 «〇 a ea cs fi〇 £3 S 理 i髮 co co «〇 cc &gt; cd r*&gt; r— co r— 〇 〇» 09 I li Is j &amp; 宙 fr S Ϊ铨培这 £g S 贫s 音1 | 3 ™ 5 3 P ! »- S S 5 a 麗 m m ;? S «&gt; S S3 u? So 功结 5 ^ m ii 1莒 ^ a s » s S % ii E s S g S to kc&gt; ir&gt; 苕窖羞 § s ,莩 E g 〇 ▼» O 泻G筠 S3 r*4 S S &gt;»— *〇 1 θ J ZE · ce eo eo 3 2 3 5 1 s 5¾ g C^ cw 1 1 J E i i. t i. 写s c | . 1 S 5f II 1 1 J e i eo ill 811 it • 1 &gt; 埋 谳 e&gt;j eo 令 m s这s * * * n w* m c〇 e;. c〇 理.播 «典:傾 1 s 證1 M CO s s i i -54- 201206987 由上述結果可得知’本發明所用之基材在透光性、耐 熱性、耐熱著色性及力學性強度皆爲平衡優良。又,該基 材由於耐熱性優異,於其至少一面形成透明導電膜、著色 部及開關元件等之構件時之形成方法、形成條件並未受到 限定,故可形成表面電阻値小之透明導電性薄膜,具有與 使用玻璃基材之濾色器基板相同程度之優良像素之色度之 濾色器基板等之複合物。因此,本發明之複合物可適宜使 用觸控面板或顯示裝置。 -55-Humidity conditions: 40% RH to 70% RH, humidity is changed every 10% RH (stretching method: weighting 5 g) Temperature: 23 〇 C (6) Optical properties The film for evaluation obtained by the following Examples and Comparative Examples, The total light transmittance and YI enthalpy were measured in accordance with the JIS K7 105 transparency test method. Specifically, the total light transmittance of the film for evaluation was measured using a SC-3H type sputum meter manufactured by Suga Test Machine Co., Ltd., and the YI 値 was measured using a SM-T type color measuring instrument manufactured by Suga Test Machine Co., Ltd. (YI before heating) ). In addition, the film for evaluation obtained in the following examples and comparative examples was heated in a hot air dryer at 23 ° C for 1 hour in a hot air dryer, and the SM-T color measuring device manufactured by Suga Test Machine Co., Ltd. was used. And measured (YI after heating). The light transmittance at a wavelength of 400 nm of the film for evaluation obtained in the following Examples and Comparative Examples was measured using an ultraviolet-ray-visible spectrophotometer V-570 (manufactured by JASCO Corporation). The phase difference (Rth) of the film for evaluation obtained in the following examples and comparative examples was measured using a RETS spectroscope manufactured by Otsuka Electronics Co., Ltd. Further, the reference wavelength at the time of measurement was 589 nm, and the evaluation film thickness of the phase difference was expressed by the specification to 30 μm. The refractive index of the film for evaluation obtained in the following examples and comparative examples was measured using a 稜鏡 coupler Model 2010 (manufactured by MetriC〇n Co., Ltd.). In addition, the refractive index was measured using a wavelength of 633 nm. (7) Specific resistance 値 Using a low-resistance meter "Loresta-GP" manufactured by Mitsubishi Chemical Corporation, 44 - 201206987 The following samples and comparative examples were determined. The specific resistance of the transparent conductive film of the transparent conductive film (Ω·cm) (8) Evaluation of the color filter substrate The film for evaluation obtained in the following examples and comparative examples was cut into 1 〇cm X 10 cm square, on both sides. A bismuth oxide film having a thickness of 0.2 μm was formed using a direct current (DC) magnetron sputtering apparatus using Si as a standard palladium material. Further, a surface of the film opposite to the surface on which the ruthenium oxide film is formed is used, and a chromium film is formed using chromium as a standard palladium material, and then a positive photosensitive resin composition is used. And a black matrix of a given shape is formed. Next, a pigment-based color resist (trade name "JCRRED689" JSR (manufactured by JSR)) was applied onto a film of a black matrix having a predetermined shape by a spin coater, and was carried out on a hot plate at 9 (TC). After pre-baking for 150 seconds to form a coating film, the ghi line (intensity ratio of wavelengths of 436 nm, 405 nm, and 365 nm = 2.7 is obtained by using a polarizer CanonPLA501F (manufactured by Kanon)) through a predetermined pattern mask: 2.5 : 4.8) Irradiation with an exposure amount of 2,000 J/r2 in terms of i-line, followed by development with 〇.〇5 wt% potassium hydroxide aqueous solution, and rinsing with ultrapure water for 60 seconds, and then The oven was heated at 30 ° C for 30 minutes to form a red colored portion. In addition to JCRRED 689, which is a pigment-based color resist, JCR GREEN 706 (manufactured by JSR) and "CR8200B" (JSR) were used. The color filter substrate is obtained by separately forming the green and blue colored portions in the same manner. The stripe width of the three-color stripe-shaped colored portion is 1 〇〇μιη, the stripe interval is 20 μm, and the resulting color filter is obtained. The color of the pixels of the substrate is colored Analytical meter-45-201206987 MCPD2000 (manufactured by Otsuka Electronics Co., Ltd.) was measured and evaluated according to the following criteria. The color filter substrate obtained by the above method was attached to the glass substrate in the same manner as described above. The color difference (ΔΕ) of the glass substrate of the color device is "〇" when the respective portions of the red, green, and blue color portions are less than 5, and any one of the red, green, and blue portions is 5 or more. The appearance of the switch element substrate obtained by the following examples and comparative examples was visually observed for the appearance of the "x" (9) switch element substrate. [Example 1] A component (A) was added to a 3 L four-necked flask: 2,6-difluorobenzonitrile (hereinafter also referred to as "DFBN") 35.12 g (0.253 mol), and (B) component: 9,9-bis(4-hydroxyphenyl)fluorene (hereinafter also referred to as "BPFLj" 70.08g (0-200mol), and resorcinol (hereinafter also referred to as "RES") 5.51g (0.050mol), potassium carbonate 41.46g (0.300mol), N,N-dimethylacetamide (hereinafter also It is called "DMAc") 443g and toluene lllg. Thereafter, a four-necked flask is equipped with a thermometer, a stirrer, a three-way valve with a nitrogen introduction tube, and Dean-Sta. The rk tube and the cooling tube. Next, after the flask was replaced with nitrogen, the resulting solution was reacted at 40 ° C for 3 hours, and the generated water was removed from the Dean-Stark tube at any time until no water formation was observed. The temperature was gradually raised to 1 60 ° C, and directly reacted at this temperature for 6 hours. After cooling to room temperature (25), the resulting salt was removed by filter paper, and the -46-201206987 filtrate was put into methanol. It is reprecipitated, and the filtrate (residue) is separated by filtration separation. The obtained filtrate was vacuum dried at 60 ° C overnight to obtain a white powder (polymer) (yield: 95.67 g, yield: 95%). The physical properties of the obtained polymer are shown in Table 1. The structural analysis and weight average molecular weight of the obtained polymer were measured. As a result, the absorption characteristics of the infrared absorption spectrum were SiUScnr^CH stretching, 1 574 CHT1, 1 499 CHT1 (absorption of the aromatic ring skeleton), 1 240 (:11^(-0-), and the weight average molecular weight was 1 30,000. The obtained polymer was redissolved in DM Ac to obtain a polymer composition having a polymer concentration of 20% by mass. The polymer was coated by doctor blade coating on a substrate composed of polyethylene terephthalate (PET). The composition was dried at 70 ° C for 30 minutes, and then dried at 100 ° C for 30 minutes to form a film, which was then peeled off from the PET substrate. Thereafter, the film was fixed on a gold type and dried at 23 ° C. In the hour, a film (substrate) for evaluation having a film thickness of 30 μm was obtained. The physical properties of the obtained film for evaluation are shown in Table 1. Further, using a sputtering apparatus, it was 30 ° C and 5 minutes in an argon atmosphere. Under the film condition, a transparent conductive film was formed on one surface of the obtained evaluation film. Further, ITO was used as the standard palladium material, and the specific resistance 値 of the obtained transparent conductive film was 2χ10·4 (Ω·cm). The obtained evaluation film was sputtered at 230 ° C. A chromium film having a thickness of 300 nm is formed into a film, and then etched to form a gate electrode having a predetermined shape. Secondly, a thickness of 300 nm is formed by a plasma CVD method at 230 ° C on the surface on which the gate electrode is formed. 47 - 201206987 The tantalum nitride film is used as a gate insulating film. Thereafter, on the surface of the film on which the gate insulating film is formed, the thickness of the film is 120 nm by the plasma CVD method at 23 ° C. A high-resistance amorphous germanium film is formed on the film, and a low-resistance amorphous germanium film having a thickness of 3 Onm is formed thereon. Secondly, a dry film is obtained by dry etching the obtained low-resistance amorphous germanium film to obtain a predetermined shape. Then, a chromium film having a thickness of 40 nm is formed on the surface of the film on which the tantalum film is formed by sputtering at a temperature of 23 ° C, and then etching is performed to form a source electrode and a drain electrode. Second, by dry type Etching, removing the low-resistance amorphous germanium film between the source electrode and the drain electrode. Secondly, a 500 nm-thick tantalum nitride film is formed by plasma CVD on the surface of the thin film forming the active electrode and the drain electrode. After that, the dry shape is used to form a predetermined shape. Film (Insulating Film) Through the above steps, a switching element substrate in which an amorphous germanium thin film transistor element is formed on the film for evaluation is obtained. When the appearance of the substrate of the obtained switching element substrate is visually observed, there is no substrate. The deformation was as colorless and transparent. [Example 2] The same procedure as in Example 1 was carried out except that 11.41 g (0.050 mol) of 2,2-bis(4-hydroxyphenyl)propane was used instead of RES. The physical properties of the polymer, the evaluation film, the transparent conductive film, the color filter substrate, and the switching element substrate are shown in Table 1. [Example 3] -48-201206987 In addition to substituting BPFL 70.08g and RES 5.51g as component (B), 8?卩1^78.84§(0.2251«〇1) and 2,2-bis(4-hydroxyl group were used instead. The same procedure as in Example 1 was carried out except that phenyl)-1,1,1,3,3,3-hexafluoropropane 8.418 (0.025111〇1). Further, the physical properties of the obtained polymer, evaluation film, transparent conductive film, color filter substrate, and switching element substrate are shown in Table 1. [Example 4] Except that 9,9-bis(3-phenyl-4-hydroxyphenyl)indole 25. 25.65 g (0.250 mol) was used instead of BPFL70.08g and RES5.51 as the component (B). This was carried out in the same manner as in Example 1. The physical properties of the obtained polymer, evaluation film, transparent conductive film, color filter substrate, and switching element substrate are shown in Table 1. [Example 5] The same procedure as in Example 1 was carried out, except that BPFL 70.08 g and RES 5.51 g as the component (B) were used instead of BPFL 87.60 g (0.2 50 mol). The physical properties of the obtained polymer, evaluation film, transparent conductive film, color filter substrate, and switching element substrate are shown in Table 1. [Example 6] BPFL7 8.84 g (0.225 mol) and 1,1 bis(4-phenylphenyl)cyclohexane 6-71 g (0.025) were used instead of BPFL70.08g and RES5.51g as the component (B). The same procedure as in Example 1 was carried out except for mol. The physical properties of the obtained -49-201206987 polymer, evaluation film, transparent conductive film, color filter substrate, and switching element substrate are shown in Table 1. [Example 7] Example 5 was carried out except that DFBN 28.10 g (0.202 mol) and 4,4-difluorobenzophenone 11.02 g (0.051 mol) were used instead of DFBN 35.12 g as the component (A). The same goes on. The physical properties of the obtained polymer, the evaluation film, the transparent conductive film, the color filter substrate, and the switching element substrate are shown in Table 1. [Example 8] The same procedure as in Example 7 was carried out except that the amount of the component (A) was changed to DFBN 17.56 g (0.126 mol) and 4,4-difluorobenzophenone 27.55 g (0.126 mol). The physical properties of the obtained polymer, evaluation film, transparent conductive film, color filter substrate, and switching element substrate are shown in Table 1. [Example 9] The same procedure as in Example 5 was carried out except that 4,4-difluorobiphenyl fluorene (63 568 ) 3) 63.568 (0.25 0111 〇 1) was used as the component (A). The physical properties of the obtained polymer, the evaluation film, the transparent conductive film, the color filter substrate, and the switching element substrate are shown in Table 1. [Comparative Example 1] 2,2-bis(4-hydroxyphenyl)-1,1,1,3,3 was used for -50 to 201206987 except for substituting BPFL70.08g and RES5.51g as component (B). A polymer and a film for evaluation were obtained in the same manner as in Example 1 except that 3-hexafluoropropane 84 and oxime 68 (0.250 mol) were used. The physical properties of the obtained polymer and the film for evaluation are shown in Table 。. Further, a transparent film was formed on one surface of the obtained evaluation film under a argon atmosphere under a film forming condition of 50 ° C and 5 ° in a argon atmosphere.尙, the standard palladium material is ITO. The specific resistance 値 of the obtained transparent conductive film was 5 χ 1 (Γ 3 (Ω·cm). Further, when the film formation temperature was set to 23 ° C in the same manner as in Example 1, the film was not deformed by the film. In addition, the evaluation of the color filter substrate was impossible because the film was deformed or melted during the formation of the colored portion. Further, the obtained evaluation film was used to form an amorphous sand film in the same manner as in the first embodiment. In the case of the crystal element, the switching element substrate could not be produced due to the deformation of the film. [Comparative Example 2] A film of polyethylene naphthalate manufactured by Teijin Co., Ltd.: Neotex, and evaluation was carried out in the same manner as in Example 1 (film) The thickness of the film for evaluation was as shown in Table 1. Further, a transparent conductive film was formed on one surface of the above-mentioned evaluation film under a film forming condition of 150 ° C and 5 minutes in an argon atmosphere using a sputtering apparatus.膜, the standard palladium material is IT0. The specific conductive 値 of the obtained transparent conductive film is 7χ10·3 (Ω·cm). Moreover, the film formation temperature is set to be the same as in the examples 1 - 51 - 201206987. At 230 ° C, due to film deformation The uniform transparent conductive film was not formed. The evaluation of the color filter substrate was impossible because the film was deformed or melted during the formation of the colored portion. Further, the obtained evaluation film was used to form amorphous as in the first embodiment.矽 Thin film transistor element, but the switching element substrate could not be manufactured due to film deformation. [Comparative Example 3] 2,2_double [4] was added to a 300-neck four-necked flask equipped with a thermometer, a stirrer, a nitrogen introduction tube, and a cooling tube. -(4-Aminophenoxy)phenyl]propane 9.70 g (23.6 mmol). Next, after replacing the flask with nitrogen, N-methyl-2-pyrrolidone (NMP) (60 ml) was added. The mixture was stirred until homogeneous. 5.30 g (23.6 mmol) of 2,3,5-tricarboxycyclopentyl acetic acid dianhydride was added to the obtained solution at room temperature, and the mixture was directly stirred at this temperature for 12 hours to cause a reaction. A solution containing polylysine. After the obtained polyglycine-containing solution was added to NMP (75 ml) and diluted, pyridine (7.5 ml) and anhydrous acetic acid (6.7 ml) were added, and the mixture was stirred at 110 ° C for 6 hours to carry out hydrazine. Imine. After cooling to room temperature, a large amount of methanol is injected by filtration. The filtered product was separated, and the obtained filtrate was dried under vacuum at 60 ° C overnight to obtain a white powder (polymer) (yield: 13.5 g, yield: 95.3%). The product was redissolved in DMAc to obtain a 20% by mass polymer solution. The polymer solution was coated on a substrate composed of PET using a doctor blade-52-201206987 coating (100 μm interval), followed by 150 After drying at 60 °C for 60 minutes, the film was peeled off. Thereafter, the film was further dried at 3 50 ° C to a thickness of 30 μm of the evaluation film. This was carried out in the same manner as in Example 1 using this evaluation month. Further, the obtained polymerized shirt transparent conductive film, color filter substrate, and switch unit are shown in Table 1. i After drying the film at 100 ° C, the film is obtained from the PET base, and the film is obtained, and the film is evaluated, and the physical properties of the substrate are: -53-201206987 !& rrrt S 4 4 £ : . p 5: i 1箬Bt* fit» : mm Μ SS «3 4& mmmmp 1 · block i &lt;a] 暴瓶1« i 1 1震养盟鉴ii 1 &gt; vs, &gt; f 8 & C mm. &gt; ο ο ο 〇O 〇o 〇. 1 X 义 s? 1 灵 II .t -t' XXX ι ra cm 1111 XXXX ea οα •t 9C X ea «η 1 Ts XX r— 〇nj want I &gt; EB Household Order CO &lt; 3 3 S : 60 e co ,; 0) «·! Qiao r* 〇 4 Sa 33 —:珐:_ im E弓§ a; κ. J 3&gt; co t- σ&gt; 3 3 3 5 5 § Stupid:! · 1 1 · &lt; Mill § •芸m sleeve · i 运马月: a co ^ u&gt; ^ «R «» «R e co •^: CO c? *R Series II ss 〇&gt; CO CQ c OO OO CO o &gt; CO CO 133 o CO c〇〇〇S3 &amp; S ii ss S S ΐ t u&gt; «〇«〇a ea cs fi〇£3 S 理i发co co «〇cc &gt; cd r*&gt; r- co r— 〇〇» 09 I li Is j &amp; frfr S Ϊ铨培 This £g S s s 1 1 3 TM 5 3 P ! »- SS 5 a 丽mm ;? S «&gt; S S3 u? So work knot 5 ^ m ii 1莒^ as » s S % ii E s S g S to kc> ir> 苕窖 § s , 莩 E g 〇 ▼» O 筠 G筠 S3 r*4 SS &gt;»— *〇1 θ J ZE · ce eo eo 3 2 3 5 1 s 53⁄4 g C^ cw 1 1 JE i i. t i. Write sc | . 1 S 5f II 1 1 J ei Eo ill 811 it • 1 &gt; burying e&gt;j eo to make ms s * * * nw* mc〇e;. c .. broadcast «典:倾1 s certificate 1 M CO ssii -54- 201206987 by the above As a result, it was found that the substrate used in the present invention is excellent in balance in light transmittance, heat resistance, heat resistance, and mechanical strength. In addition, since the base material is excellent in heat resistance, a method of forming a transparent conductive film, a colored portion, and a member such as a switching element is formed on at least one surface thereof, and the formation conditions are not limited, so that a transparent conductive film having a small surface resistance can be formed. The film has a composite of a color filter substrate or the like having a chromaticity of an excellent pixel similar to that of a color filter substrate using a glass substrate. Therefore, the composite of the present invention can suitably use a touch panel or a display device. -55-

Claims (1)

201206987 七、申請專利範固 1. 一種複合物,其係具有含有以示差掃描熱量測定 (DSC、昇溫速度20°C/分)所測得之玻璃轉移溫度(Tg)爲 2 3 0〜3 5 0°C之芳香族聚醚系聚合物之基材,與形成於該基 材之至少一面上之選自由透明導電膜、著色部及開關元件 所成群之至少1種構件。 2. 如請求項1之複合物,其中前述芳香族聚醚系聚 合物具有選自由下述式(1)所表示之構造單位及下述式(2) 所表示之構造單位所成群之至少一種構造單位(i); 【化1】201206987 VII. Application for patents 1. A composite having a glass transition temperature (Tg) measured by differential scanning calorimetry (DSC, heating rate 20 ° C / min) is 2 3 0 to 3 5 The base material of the aromatic polyether polymer of 0 ° C and at least one member selected from the group consisting of a transparent conductive film, a colored portion, and a switching element formed on at least one surface of the substrate. 2. The composite according to claim 1, wherein the aromatic polyether-based polymer has at least one selected from the group consisting of a structural unit represented by the following formula (1) and a structural unit represented by the following formula (2); a structural unit (i); [chemical 1] 式(1)中,R1〜R4各自獨立表示碳數1〜12之1價之有 機基,a~d各自獨立表示0〜4之整數; 【化2】In the formula (1), R1 to R4 each independently represent a monovalent organic group having a carbon number of 1 to 12, and a to d each independently represent an integer of 0 to 4; (2) 式(2)中’ RLR4及a〜d係各自獨1與目丨j述式(1)中之 R1〜R4及a〜d相同意義’ γ表示單鍵、_S〇2-或&gt;c=〇’ R7及R8各自獨立表示鹵素原子、碳數1〜12之1價之有 -56- 201206987 機基或硝基,g及h各自獨立表示0〜4之整數,m表示0 或1;但,m爲0時,R7不爲氰基。 3.如請求項1或2之複合物,其中前述芳香族聚醚 系聚合物更具有選自由下述式(3)所表示之構造單位及下 述式(4)所表示之構造單位所成群之至少一種構造單位(2) In the formula (2), 'RLR4 and a to d are each unique and the same meaning as R1 to R4 and a~d in the formula (1) 'γ denotes a single bond, _S〇2- or > ;c=〇' R7 and R8 each independently represent a halogen atom, a carbon number of 1 to 12 is -56-201206987 machine base or nitro group, g and h each independently represent an integer of 0 to 4, m represents 0 or 1; However, when m is 0, R7 is not a cyano group. 3. The composite according to claim 1 or 2, wherein the aromatic polyether polymer further has a structural unit selected from the structural unit represented by the following formula (3) and the structural unit represented by the following formula (4). At least one structural unit of the group 【化3】[化3] CN 〇 式(3)中,R5及R6各自獨立表示碳數1〜12之1價之 有機基,Z 表示單鍵、-0-、-3-、-302-、&gt;€=0、-CONH-、-COO-或碳數1〜12之2價之有機基,e及f各自 獨立表示〇〜4之整數,η表示0或1。In the formula (3), R5 and R6 each independently represent a monovalent organic group having a carbon number of 1 to 12, and Z represents a single bond, -0-, -3-, -302-, &gt; €=0, - CONH-, -COO- or a two-valent organic group having a carbon number of 1 to 12, and e and f each independently represent an integer of 〇~4, and η represents 0 or 1. 式(4)中,R7、R8、Y、m、g及h係各自獨立與前述 式(2)中之R7、R8、Y、m、g及h相同意義,R5、R6、 Z、n、e及f係各自獨立與前述式(3)中之R5、R6、Z、 n、e及f相同意義。 4.如請求項3之複合物,其中於前述芳香族聚醚系 -57- 201206987 聚合物中,上述構造單位(i)與上述構造單位(π)之莫耳比 爲 50 : 50-100 : 0 ° 5. 如請求項1~4中任一項之複合物,其中前述芳香 族聚醚系聚合物之以凝膠滲透層析法(GPC)所測得之以聚 苯乙烯換算之重量平均分子量爲5,000〜500,000。 6. 如請求項1〜5中任一項之複合物,其中前述基材 於厚度30μηι時之由JIS K7105透明度試驗法所測得之全 光鱗穿透率爲85%以上。 7. 如請求項1〜6中任一項之複合物,其中前述基材 於厚度30μιη時之ΥΙ値(黃色指數)爲3.0以下。 8. 如請求項1〜7中任一項之複合物,其中前述基材 於厚度30μιη時之厚度方向之位相差(Rth)爲2〇〇nm以 下。 9. 如請求項1〜8中任一項之複合物,其中前述構件 爲透明導電膜’而前述基材或透明導電膜之至少一面係具 備偏光板而成。 10. —種顯示裝置’其係含有如請求項卜9中任一項 之複合物。 11 · 一種觸控面板,其係含有如請求項i〜9中任一項 之複合物。 -58- 201206987 四、指定代表圓: (一) 本案指定代表圖為:無 (二) 本代表圖之元件符號簡單說明:無 201206987 五 本案若有化學式時,請揭示最能顯示發明特徵的化學 式·無In the formula (4), R7, R8, Y, m, g and h are each independently equivalent to R7, R8, Y, m, g and h in the above formula (2), and R5, R6, Z, n, Each of e and f is independently the same as R5, R6, Z, n, e and f in the above formula (3). 4. The composite according to claim 3, wherein in the above aromatic polyether-57-201206987 polymer, the molar ratio of the above structural unit (i) to the above structural unit (π) is 50: 50-100: The compound according to any one of claims 1 to 4, wherein the aromatic polyether polymer has a weight average in terms of polystyrene measured by gel permeation chromatography (GPC). The molecular weight is 5,000 to 500,000. 6. The composite according to any one of claims 1 to 5, wherein the substrate has a total light scale transmittance of 85% or more as measured by a JIS K7105 transparency test method at a thickness of 30 μm. 7. The composite according to any one of claims 1 to 6, wherein the substrate has a ΥΙ値 (yellow index) of 3.0 or less at a thickness of 30 μm. 8. The composite according to any one of claims 1 to 7, wherein the substrate has a phase difference (Rth) in the thickness direction at a thickness of 30 μm of 2 〇〇 nm or less. 9. The composite according to any one of claims 1 to 8, wherein the member is a transparent conductive film' and at least one side of the substrate or the transparent conductive film is provided with a polarizing plate. 10. A display device' which comprises a composite according to any one of claims 9. A touch panel comprising the composite according to any one of claims 1 to 9. -58- 201206987 IV. Designated representative circle: (1) The representative representative of the case is: No (2) The symbol of the representative figure is simple: No 201206987 If there is a chemical formula in the case, please disclose the chemical formula that best shows the characteristics of the invention. ·no
TW100124200A 2010-07-09 2011-07-08 Composite and display device that contains same TW201206987A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010157119 2010-07-09
JP2010157121 2010-07-09
JP2010157122 2010-07-09
JP2010172154 2010-07-30

Publications (1)

Publication Number Publication Date
TW201206987A true TW201206987A (en) 2012-02-16

Family

ID=45441321

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100124200A TW201206987A (en) 2010-07-09 2011-07-08 Composite and display device that contains same

Country Status (3)

Country Link
JP (1) JPWO2012005345A1 (en)
TW (1) TW201206987A (en)
WO (1) WO2012005345A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014112510A (en) * 2012-11-02 2014-06-19 Nitto Denko Corp Transparent conductive film
JP2015114919A (en) * 2013-12-12 2015-06-22 Jsr株式会社 Transparent conductive film, method for producing the same, and display device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06145494A (en) * 1992-11-13 1994-05-24 Denki Kagaku Kogyo Kk Polyformal resin composition
JP4622348B2 (en) * 2003-07-07 2011-02-02 住友ベークライト株式会社 Transparent composite composition
JP2006199746A (en) * 2005-01-18 2006-08-03 Jsr Corp Aromatic polyether and process for producing the same
JP2006199747A (en) * 2005-01-18 2006-08-03 Jsr Corp Aromatic polyether for optical material and resin for optical material comprising aromatic polyether
JP2007246629A (en) * 2006-03-14 2007-09-27 Jsr Corp Optical film and manufacturing method thereof
JP2008050512A (en) * 2006-08-28 2008-03-06 Fujifilm Corp Polysulfone resin, film, optical film, liquid crystal cell and liquid crystal display device
JP2010152004A (en) * 2008-12-24 2010-07-08 Jsr Corp Optical member substrate

Also Published As

Publication number Publication date
WO2012005345A1 (en) 2012-01-12
JPWO2012005345A1 (en) 2013-09-05

Similar Documents

Publication Publication Date Title
TWI512004B (en) Film, resin composition and polymer
TWI529425B (en) An optical filter and an image pickup device including the filter
TWI488884B (en) Novel polymers, methods for their manufacture and films
JP6891084B2 (en) Highly transparent polyimide
TWI503345B (en) A resin composition, an insulating film, a film forming method, and an electronic component
TW201206987A (en) Composite and display device that contains same
JP2012018360A (en) Polarizer protective film and display device including the same
WO2016125660A1 (en) Aromatic polyketone and method for manufacturing same, aromatic polyketone composition, aromatic polyketone film, optical element, and image display device
JP5621847B2 (en) Polymer, method for producing the same, film and method for producing the same
JP2012038785A (en) Method for manufacturing substrate, and film and composition for use in the same
JP2013079344A (en) Polyimide precursor, composition containing polyimide precursor, and transparent polyimide molding obtained from the composition
TWI489914B (en) A substrate for printed wiring, and a resin composition for use thereof
JP2013079345A (en) Highly transparent polyimide
JP2012224763A (en) Polymer, film, resin composition, and method for manufacturing the film
KR20190036554A (en) A polyketone composition containing a nitrogen-containing compound, a polyketone cured product, an optical element, and an image display device
JP2019014819A (en) Aromatic polyketone having decalin skeleton and production method of the same, aromatic polyketone composition having decalin skeleton, aromatic polyketone film having decalin skeleton, optical element and image display device
JP2010090349A (en) Tubular film
JP2017197629A (en) Branched aromatic polyketone, method for producing branched aromatic polyketone, branched aromatic polyketone composition, branched aromatic polyketone film, optical element, image display device, and base material with branched aromatic polyketone film