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TW201205867A - Light emitting diode package and light emitting diode module - Google Patents

Light emitting diode package and light emitting diode module Download PDF

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Publication number
TW201205867A
TW201205867A TW99125222A TW99125222A TW201205867A TW 201205867 A TW201205867 A TW 201205867A TW 99125222 A TW99125222 A TW 99125222A TW 99125222 A TW99125222 A TW 99125222A TW 201205867 A TW201205867 A TW 201205867A
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Taiwan
Prior art keywords
emitting diode
light emitting
substrate
package structure
diode package
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TW99125222A
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Chinese (zh)
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TWI513041B (en
Inventor
Shiun-Wei Chan
Chih-Hsun Ke
Hsing-Fen Lo
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Advanced Optoelectronic Tech
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Abstract

A light emitting diode package includes a base, a chip mounted on a first surface of the base, two electrodes electrically connected to the chip, an encapsulant sealing the chip, and at least one trench defined in a second surface of the base. The present invention also provides a light emitting diode module having the light emitting diode package.

Description

201205867 六、發明說明: 【發明所屬之技術領域】 [0001] 本發明涉及一種半導體發光元件,特別涉及一種發光二 極體封裝結構及具有該發光二極體封裝結構的發光二極 體模組。 [0002] [先前技術] 作為一種新興的光源,發光二極體憑藉其發光效率高、 體積小、重量輕、環保等優點,已被廣泛地應用到當刖 〇 [0003] 的各個領域當中’大有取代傳、蛛光源的趨勢。 目前業界通常採用:;表面黏貼技術(SMT)將封裝後的發光 二極體設置在電路板等板材上’再應用到各個領域當中 。表面黏貼加工時’會將錫膏設置在發光二極體與板材 之間,利用錫膏將發光二極體焊固在板棒主。然而,由 於錫膏的設置,發光二極體在板材上容易產生浮高、歪 斜或者爬錫等現象,不但影響·表面黏貼加工的操作,還 影響成品的外觀與性能。同時,在加熱錫膏時,錫膏内 的助焊劑還會因受辱^雨在錫膏内產生孔洞或者空隙,使 得錫膏的熱阻增大,影響發光二極體的散熱。 [0004] 【發明内容】 有鑒於此,有必要提供一種發光二極體封裝結構及發光 二極體模組’該發光二極體封裝結構可更方便地被固定 ,並且具有較佳的熱傳導性。 [0005] 一種發光二極體封裝結構’包括一基板,設於基板的第 一表面上的一發光二極體晶片,與發光二極體晶片電連 接的二電極’及密封發光二極體晶片的封裝體’所述基 099125222 表單編號A0101 第3頁/共25頁 0992044297-0 201205867 [0006] [0007] [0008] [0009] 099125222 板的一第二表面上設有至少一溝槽。 一種發光二極體模組,包括板材及設置在板材上的至少 一發光二極體封裝結構,所述至少一發光二極體封裝結 構包括一基板,設於基板的第一表面上的一發光二極體 晶片,與發光二極體晶片電連接的二電極,及密封發光 二極體晶片的封裝體,所述基板的一第二表面上設有至 少一溝槽,且所述基板的第二表面貼設在所述板材上。 與習知技術相比,本發明發光二極體封裝結構在其基板 上開設溝槽,可增加基板表面積,以容納更多的錫膏, 使發光二極體可緊密黏貼在板材上,避免發光二極體浮 高、歪斜或爬錫等現象產生。溝槽還可使錫膏内的助焊 劑受熱產生的氣體得以排出,避免氣體殘留於錫膏中產 生空隙或孔洞,從而可降低熱阻,使發光二極體得到更 好的散熱。 【實施方式】 圖1為本發明第一實施方式的發光二極體封裝結構10的側 視示意圖。該發光二極體封裝結構10包括一基板20,設 於基板20的一表面上的一發光二極體晶片30,與發光二 極體晶片30電連接的二電極40,及密封發光二極體晶片 30的封裝體50,基板20的另一表面上設有至少一溝槽22 〇 基板20可由塑膠、陶瓷等非導電物質製成。基板20可呈 矩形、圓形或者多邊形等形狀,本實施方式中為一矩形 塊狀。發光二極體晶片30設於基板20的一第一表面上, 例如,可以是頂表面。 表單編號A0101 第4頁/共25頁 0992044297-0 201205867 [0010]發光二極體晶片30透過二金線42與二電極40電連接。發 光二極體晶片30可以是正裝、倒裝等形式,還可以是垂 直式的發光二極體晶片。本實施方式中的發光二極體晶 片3 0為正裝。 [0011]本實施方式中的溝槽22為多個並呈直線形,且開設在基 板20的一第二表面上,例如是底表面,當然不排除可以 是其他的表面。溝槽22的截面可以是矩形、圓弧形、多 邊形等任意的幾何形狀。由於溝槽22的設置,可增加基 〇 板20的表面積,以容納更多的錫膏,發光二極體封裝結 構10被固定時,可避免淨高、歪斜或爬錫等現象產生。 進一步的’溝槽22還可使錫膏内的助焊劑受熱時產生的 氣體得以排出,避免氣體殘留於錫膏中產生空隙或孔洞 ’從而可降低熱阻,使發光二極體封裝:結構10具有更佳 的散熱性能。優選的,溝槽22與基板2〇的邊沿連通,如 此可使溝槽22具有更佳的排出氣體的功效,使錫膏的熱 阻降低。優選的,溝槽22的深廋為基板2〇的厚度的 〇 1/5-1/2,如此設置溝槽22的深度,既不會使基板20的 強度太差,又不會使容錫的空間太小。另外,還可於溝 槽22的表面上全鑛或者部分鍵上金屬,以使锡膏易於沾 黏’達到吃錫的目的。 ' [0012] [0013] 099125222 封裝體50可以是各種樹脂或者破璃等透明材料 50的形狀可為球形、橢球形或者方形塊狀等。^裝體 請參相2,本發明第二實施方柄發光二極體 11的基板20上還開設有若干導電孔24和導熱孔u "構 孔24和導熱孔25分別貫穿基板2〇的頂表面和底表,導電 表單煸號A0101 第5頁/共25頁 -面,且 °"2〇44297~〇 201205867 導電孔24和導熱孔25内分別設有導電物質241和導熱物質 251,例如可以是金屬。其中,導電孔24内的導電物質 241分別與二電極40電連接,從而為發光二極體晶片30提 供更多的導電路徑。導熱孔25内的導熱物質251比基板20 的導熱性能更好,這些導熱物質251與基板20上的金屬層 43熱連接,並可將發光二極體晶片30產生的熱傳導至基 板20的底部進行散發,可提高散熱性能。優選的,對應 發光二極體晶片30的位置開設的導熱孔25更大,從而更 有利於發光二極體晶片30的散熱。導電孔24、導熱孔25 可為圓孔、方孔、長條孔或方塊孔,導電孔24、導熱孔 25的截面可為矩形、梯形等多種形狀。 [0014] 上述實施方式中的溝槽22均是在基板20上加工而成,當 然本發明中的溝槽22並不限於此種實施方式。請參考圖3 ,本發明第三實施方式中的基板20由呈片狀的且高度不 一的導電物質241、導熱物質251 (例如是金屬)和非導 電物質201 (例如是陶瓷、塑膠等)交替夾設而成。其中 ,導電物質241、導熱物質251的高度比非導電物質201 的高度大,當導電物質241、導熱物質251與非導電物質 201的頂端對齊時,底端就因為高低差,而在相鄰二導電 物質241、導熱物質251之間形成溝槽22。 [0015] 圖4所示為本發明第四實施方式的發光二極體封裝結構12 。該發光二極體封裝結構12的基板20的頂表面上還設有 一反射杯21,該封裝體50容置在該反射杯21内,而發光 二極體晶片30則置於反射杯21的底部。反射杯21可與基 板20—體成型。反射杯21的内反射面與基板20的頂表面 099125222 表單編號A0101 第6頁/共25頁 0992044297-0 201205867 之間的夾角在9 0 ~ 1 3 〇度之間。 [0016] 請參考圖5和圖6,本發明第五實施方式的發光二極體封 裝結構13内的發光二極體晶片3〇為垂直型發光二極體晶 片,其底部透過一電極40與外部形成電連接,而其頂部 透過金線42與另一電極4〇連接後再與外部形成電連接。 基板20上開設有多個導電孔24和多個導熱孔25。導電孔 24和導熱孔25内分別填充導電物質和導熱物質。其中, 分佈在發光二極體晶片30周圍的導熱孔25更多也即靠 近發光二極體晶片30的區域内的導熱孔25的密度比遠離 發光二極體晶片3〇的區域内的導熱孔25的密度大此設 計目的在於使集中在#近發光二極體晶㈣的區域内的 熱量更加快速的散發^ _ , [0017] 請參考圖7和圖8,本發明第六實施方式的發光二極體封 裝結構14内的發光二極體晶片3G為倒裝形式,也即覆晶 式發光二極艘晶片’其透過二電極4Q與外部形成電連接 。基板2G⑽-導熱孔25為方塊孔,其截面呈梯形。 [_圖9所示為本發明第七實施方式的發光二極體封襄结構15 ,該發光二極體封裝結構15包括—大致呈圓柱狀的絲 20,設於基板20的頂表面上的—發光二極體晶㈣與 發光二極體晶片3G電連接的二電極4(),及密封發光二極 體晶片30的封裝體5〇,基板2Q的底表面上設有至少一溝 槽22。基板20由高導熱性能材料製成,發光二極體晶片 30產生的熱$可透過此基板20傳遞出去。在封裝體5〇内 於發光二極體晶片期圍還包覆—層榮光粉層32,該榮 光粉層32内的螢光粉可以是例如石梅石基榮光粉 、矽酸 099125222 表單編號A0101 第7頁/共25頁 201205867 鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫 代鎵酸鹽基螢光粉和氮化物基螢光粉。此外,基板20周 圍還圍設一基座60,電極40延伸至基座60外並與基板20 的底表面平齊。 [0019] 圖10、圖11所示為不同實施方式中基板20上開設的不同 形態的溝槽22。其中,圖10中所示的溝槽22為曲線形, 圖11中所示的溝槽22為網狀。 [0020] 請再參考圖12,本發明一發光二極體模組包括一板體70 及置於板體70上的一發光二極體封裝結構,該實施方式 中的發光二極體封裝結構即為上述第七實施方式中的發 光二極體封裝結構15,且開設有溝槽22的一面與板體70 貼設。當然可以理解地,該發光二極體封裝結構可以為 上述任一實施方式中的一個,而且不同實施方式中的不 同特徵還可合理地進行組合、搭配,例如,在同一實施 方式中,溝槽22可由上述第一、第三實施方式中的不同 形式形成。另外,還可使上述不同實施方式中的發光二 極體封裝結構共同置於同一板體70上。該板體70可以是 電路板等板材,當發光二極體封裝結構借由錫膏71固定 在該板體70上時,由於發光二極體封裝結構的基板20上 開設有溝槽22,可容納過多的錫膏71,使發光二極體封 裝結構緊密黏貼在板體70上,並避免發光二極體封裝結 構產生浮高、歪斜或爬錫等現象的產生。優選的,至少 一溝槽22與基板20的邊沿連通,如此可使溝槽22具有更 佳的排出氣體的功效,使錫膏71内的助焊劑受熱時產生 的氣體得以排出,避免氣體殘留於錫膏71中產生空隙或 099125222 表單編號A0101 第8頁/共25頁 0992044297-0 201205867 孔洞,從而降低錫膏7〗的熱阻。 [0021] 綜上所述,本發明確已符合發明專利之要件,遂依法提 出專利中請。惟’以上所述者僅為本發明之較佳實施方 式,自不能以此限制本案之巾請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之f效修飾或變化 ’皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0022] 〇 則為本發明第一實施方式的發光二極體封袋結構的側視 示意圖。 .;::;:..: . [0023] 圖2為本發明第二實施方式的發光二極體封農結構的别視 示意圖。 [0024] 圖3為本發明第三實施方式的發光二極體封裳結構的剖視 示意圖。 [0025] 圖4為本發明第四實施方式的發光二極體封裝結構的剖視 示意圖。 〇 [0026] 圖5為本發明第五實施方式的發光二極體封裝結構的俯視 示意圖。 [0027] 圖6為沿圖5中的VI-VI線的剖視示意圖。 [0028] 圖7為本發明第六實施方式的發光二極體封裝結構的俯視 示意圖。 [0029] 圖8為沿圖7中的Vlll-Vin線的剖視示意圖。 [0030] 圖9為本發明第七實施方式的發光二板趙封较結構的剖視 099125222 示意圖。 表單編號A0101 第9頁/共25頁 0992044297-0 201205867 [0031] 圖10和圖1 1為本發明發光二極體封裝結構中的基板於不 同實施方式中的仰視示意圖。 [0032] 圖12為本發明一實施方式的發光二極體模組的剖示示意 圖。 【主要元件符號說明】 [0033] 發光二極體封裝結構:10、11、12、13、14、15 [0034] 基板:20 [0035] 非導電物質:201 [0036] 反射杯:21 [0037] 溝槽:22 [0038] 導電孔:24 [0039] 導電物質:241 [0040] 導熱孔:25 [0041] 導熱物質:251 [0042] 發光二極體晶片:30 [0043] 螢光粉層:32 [0044] 電極:40 [0045] 金線:42 [0046] 金屬層:43 [0047] 封裝體:50 099125222 表單編號A0101 第10頁/共25頁 0992044297-0 60 201205867 [0048] 基座 70 71 [0049] 板體 [0050] 錫膏 〇201205867 VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor light emitting device, and more particularly to a light emitting diode package structure and a light emitting diode module having the light emitting diode package structure. [0002] [Prior Art] As an emerging light source, the light-emitting diode has been widely applied to various fields of the [0003] by virtue of its high luminous efficiency, small size, light weight, and environmental protection. There is a tendency to replace the transmission and the source of the spider. At present, the industry usually adopts: Surface Mount Technology (SMT) to place the packaged LEDs on boards and other boards, and then apply them to various fields. When the surface is pasted, the solder paste is placed between the light-emitting diode and the plate, and the light-emitting diode is soldered to the main plate by solder paste. However, due to the setting of the solder paste, the light-emitting diode tends to cause floating height, skew or creeping on the board, which not only affects the operation of the surface pasting process, but also affects the appearance and performance of the finished product. At the same time, when the solder paste is heated, the flux in the solder paste may cause holes or voids in the solder paste due to the irritating rain, so that the thermal resistance of the solder paste is increased, which affects the heat dissipation of the light-emitting diode. SUMMARY OF THE INVENTION In view of the above, it is necessary to provide a light emitting diode package structure and a light emitting diode module. The light emitting diode package structure can be more conveniently fixed and has better thermal conductivity. . [0005] A light emitting diode package structure includes a substrate, a light emitting diode chip disposed on the first surface of the substrate, a two electrode ' electrically connected to the light emitting diode chip, and a sealed light emitting diode chip The package 'the base 099125222 Form No. A0101 Page 3 / Total 25 page 0992044297-0 201205867 [0007] [0009] [0009] 099125222 A second surface of the plate is provided with at least one groove. An LED module includes a plate and at least one LED package structure disposed on the plate, the at least one LED package structure comprising a substrate, and a light emitting on the first surface of the substrate a diode chip, a second electrode electrically connected to the light emitting diode chip, and a package for sealing the LED chip, wherein a second surface of the substrate is provided with at least one trench, and the substrate is The two surfaces are attached to the sheet. Compared with the prior art, the light-emitting diode package structure of the present invention has a groove on the substrate thereof, which can increase the surface area of the substrate to accommodate more solder paste, so that the light-emitting diode can be closely adhered to the plate to avoid illuminating. The phenomenon of floating height, skew or creeping of the diode occurs. The trench can also discharge the gas generated by the flux in the solder paste to prevent the gas from remaining in the solder paste to generate voids or holes, thereby reducing the thermal resistance and allowing the light-emitting diode to be better dissipated. [Embodiment] FIG. 1 is a schematic side view of a light emitting diode package structure 10 according to a first embodiment of the present invention. The LED package structure 10 includes a substrate 20, a light emitting diode chip 30 disposed on a surface of the substrate 20, two electrodes 40 electrically connected to the LED chip 30, and a sealed LED. The package body 50 of the wafer 30 is provided with at least one trench 22 on the other surface of the substrate 20. The substrate 20 may be made of a non-conductive material such as plastic or ceramic. The substrate 20 may have a rectangular shape, a circular shape, or a polygonal shape, and is a rectangular block shape in the present embodiment. The LED wafer 30 is disposed on a first surface of the substrate 20, and may be, for example, a top surface. Form No. A0101 Page 4 of 25 0992044297-0 201205867 [0010] The LED chip 30 is electrically connected to the two electrodes 40 through the two gold wires 42. The light emitting diode chip 30 may be in the form of a dress, a flip, or the like, or may be a vertical light emitting diode chip. The light-emitting diode wafer 30 in the present embodiment is a formal wear. The grooves 22 in the present embodiment are plural and linear, and are formed on a second surface of the substrate 20, such as a bottom surface, although it is of course not possible to exclude other surfaces. The cross section of the groove 22 may be any geometric shape such as a rectangle, a circular arc, or a polygon. Due to the arrangement of the trenches 22, the surface area of the base plate 20 can be increased to accommodate more solder paste. When the light-emitting diode package structure 10 is fixed, the phenomenon of high height, skew or creeping can be avoided. Further, the trench 22 can also discharge the gas generated when the flux in the solder paste is heated, thereby preventing the gas from remaining in the solder paste to generate voids or holes, thereby reducing the thermal resistance and encapsulating the light-emitting diode: structure 10 Has better heat dissipation performance. Preferably, the trenches 22 are in communication with the edges of the substrate 2, thereby providing the trenches 22 with better exhaust gas efficiency and lowering the thermal resistance of the solder paste. Preferably, the depth of the trench 22 is 〇1/5-1/2 of the thickness of the substrate 2〇, so that the depth of the trench 22 is set, so that the strength of the substrate 20 is not too bad, and the tin is not allowed. The space is too small. In addition, the metal may be completely or partially bonded to the surface of the trench 22 to make the solder paste easy to adhere to the purpose of eating tin. [0013] [0013] The package 50 may be a transparent material such as various resins or glass, and may have a spherical shape, an ellipsoidal shape, a square block shape, or the like. The mounting body of the second embodiment of the present invention is further provided with a plurality of conductive holes 24 and a heat conducting hole u " a hole 24 and a heat conducting hole 25 respectively penetrating through the substrate 2 Top surface and bottom table, conductive form nickname A0101 Page 5 / 25 pages - face, and ° " 2〇44297~〇201205867 Conductive hole 24 and heat conduction hole 25 are respectively provided with conductive material 241 and heat conductive material 251, For example, it can be metal. The conductive materials 241 in the conductive holes 24 are electrically connected to the two electrodes 40, respectively, thereby providing more conductive paths for the LEDs 30. The heat conductive material 251 in the heat conduction hole 25 is more thermally conductive than the substrate 20. The heat conductive material 251 is thermally connected to the metal layer 43 on the substrate 20, and the heat generated by the light emitting diode wafer 30 can be conducted to the bottom of the substrate 20. Dissipated to improve heat dissipation. Preferably, the heat conducting hole 25 corresponding to the position of the light emitting diode chip 30 is larger, thereby facilitating heat dissipation of the light emitting diode chip 30. The conductive hole 24 and the heat conducting hole 25 may be a circular hole, a square hole, a long hole or a square hole, and the conductive hole 24 and the heat conducting hole 25 may have various shapes such as a rectangular shape and a trapezoidal shape. The grooves 22 in the above embodiment are each formed on the substrate 20, and the grooves 22 in the present invention are not limited to such an embodiment. Referring to FIG. 3, the substrate 20 in the third embodiment of the present invention comprises a conductive material 241 having a sheet shape and a different height, a heat conductive material 251 (for example, metal), and a non-conductive material 201 (for example, ceramics, plastic, etc.). Alternately sandwiched. The height of the conductive material 241 and the heat conductive material 251 is larger than the height of the non-conductive material 201. When the conductive material 241 and the heat conductive material 251 are aligned with the top end of the non-conductive material 201, the bottom end is adjacent to the height difference. A groove 22 is formed between the conductive material 241 and the heat conductive material 251. 4 shows a light emitting diode package structure 12 according to a fourth embodiment of the present invention. A reflective cup 21 is further disposed on the top surface of the substrate 20 of the LED package 12, the package 50 is received in the reflective cup 21, and the LED wafer 30 is placed at the bottom of the reflective cup 21. . The reflector cup 21 can be integrally formed with the substrate 20. The inner reflecting surface of the reflecting cup 21 and the top surface of the substrate 20 099125222 Form No. A0101 Page 6 of 25 The angle between 0992044297-0 201205867 is between 9 0 and 1 3 〇. [0016] Referring to FIG. 5 and FIG. 6, the LED device 3 in the LED package structure 13 of the fifth embodiment of the present invention is a vertical LED chip, and the bottom thereof is transmitted through an electrode 40. The external portion is electrically connected, and the top portion thereof is connected to the other electrode 4A through the gold wire 42 and then electrically connected to the outside. A plurality of conductive holes 24 and a plurality of heat conduction holes 25 are formed in the substrate 20. The conductive holes 24 and the heat conductive holes 25 are filled with a conductive material and a heat conductive material, respectively. The heat conducting holes 25 distributed around the light emitting diode chip 30 are more dense, that is, the heat conducting holes 25 in the region close to the light emitting diode chip 30, and the heat conducting holes in the region away from the light emitting diode chip 3〇. The density of 25 is large. The purpose of this design is to make the heat concentrated in the region of the near-light-emitting diode (4) more rapidly. [0017] Referring to FIG. 7 and FIG. 8, the illumination of the sixth embodiment of the present invention The light-emitting diode chip 3G in the diode package structure 14 is in a flip-chip form, that is, a flip-chip light-emitting diode chip, which is electrically connected to the outside through the two electrodes 4Q. The substrate 2G (10) - the heat conducting hole 25 is a square hole having a trapezoidal cross section. FIG. 9 shows a light-emitting diode package structure 15 according to a seventh embodiment of the present invention. The light-emitting diode package structure 15 includes a substantially cylindrical wire 20 disposed on a top surface of the substrate 20. - a light-emitting diode (4) two electrodes 4 () electrically connected to the light-emitting diode chip 3G, and a package 5 of the sealed light-emitting diode chip 30, at least one trench 22 is provided on the bottom surface of the substrate 2Q . The substrate 20 is made of a material having high thermal conductivity, and heat generated by the LED chip 30 can be transmitted through the substrate 20. The layer of glory powder layer 32 is further coated in the package body 5 in the periphery of the light-emitting diode chip. The phosphor powder in the glory powder layer 32 may be, for example, mermaid-based glory powder, tannic acid 099125222 Form No. A0101 Page 7 of 25 201205867 Salt-based phosphor powder, orthosilicate-based phosphor powder, sulfide-based phosphor powder, thiogallate-based phosphor powder and nitride-based phosphor powder. In addition, a substrate 60 is also disposed around the substrate 20, and the electrode 40 extends outside the susceptor 60 and is flush with the bottom surface of the substrate 20. [0019] FIGS. 10 and 11 show trenches 22 of different shapes that are formed on the substrate 20 in different embodiments. Among them, the groove 22 shown in Fig. 10 has a curved shape, and the groove 22 shown in Fig. 11 has a mesh shape. [0020] Referring to FIG. 12, a light-emitting diode module of the present invention includes a board body 70 and a light-emitting diode package structure disposed on the board body 70. The light-emitting diode package structure in this embodiment That is, the light-emitting diode package structure 15 in the seventh embodiment described above, and one surface on which the trench 22 is opened is attached to the plate body 70. Of course, it can be understood that the LED package structure can be one of the above embodiments, and different features in different embodiments can be combined and matched reasonably. For example, in the same embodiment, the trench 22 may be formed in different forms in the first and third embodiments described above. In addition, the light emitting diode package structures in the different embodiments described above can be collectively placed on the same board body 70. The board body 70 may be a board such as a circuit board. When the light emitting diode package structure is fixed on the board body 70 by the solder paste 71, the substrate 20 of the light emitting diode package structure is provided with a trench 22. The excess solder paste 71 is accommodated, so that the light-emitting diode package structure is closely adhered to the board body 70, and the phenomenon that the light-emitting diode package structure generates floating height, skew or creeping is prevented. Preferably, at least one of the trenches 22 is in communication with the edge of the substrate 20, so that the trench 22 has a better effect of exhausting gas, so that the gas generated when the flux in the solder paste 71 is heated is discharged, thereby preventing gas from remaining in the gas. A gap is formed in the solder paste 71 or 099125222 Form No. A0101 Page 8 / Total 25 Page 0992044297-0 201205867 Holes, thereby reducing the thermal resistance of the solder paste 7. [0021] In summary, the present invention has indeed met the requirements of the invention patent, and the patent is filed according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Any modification or variation made by a person familiar with the art of the present invention in accordance with the spirit of the present invention shall be covered by the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0022] A schematic side view of a light-emitting diode envelope structure according to a first embodiment of the present invention. Fig. 2 is a perspective view showing the structure of the light-emitting diode sealing structure according to the second embodiment of the present invention. 3 is a cross-sectional view showing a light-emitting diode sealing structure according to a third embodiment of the present invention. 4 is a cross-sectional view showing a light emitting diode package structure according to a fourth embodiment of the present invention. 5 is a top plan view showing a light emitting diode package structure according to a fifth embodiment of the present invention. 6 is a cross-sectional view taken along line VI-VI of FIG. 5. 7 is a top plan view showing a light emitting diode package structure according to a sixth embodiment of the present invention. 8 is a cross-sectional view taken along line V111-Vin of FIG. 7. 9 is a schematic cross-sectional view of a light-emitting two-plate Zhao seal according to a seventh embodiment of the present invention. Form No. A0101 Page 9 of 25 0992044297-0 201205867 [0031] FIGS. 10 and 11 are schematic views of a substrate in a light emitting diode package structure according to a different embodiment of the present invention. 12 is a schematic cross-sectional view showing a light emitting diode module according to an embodiment of the present invention. [Main component symbol description] [0033] Light-emitting diode package structure: 10, 11, 12, 13, 14, 15 [0034] Substrate: 20 [0035] Non-conductive material: 201 [0036] Reflective cup: 21 [0037] ] Trench: 22 [0038] Conductive hole: 24 [0039] Conductive material: 241 [0040] Thermal via: 25 [0041] Thermally conductive material: 251 [0042] Light-emitting diode wafer: 30 [0043] Fluorescent powder layer :32 [0044] Electrode: 40 [0045] Gold wire: 42 [0046] Metal layer: 43 [0047] Package: 50 099125222 Form No. A0101 Page 10/Total 25 Page 0992044297-0 60 201205867 [0048] Base 70 71 [0049] plate body [0050] tin paste

099125222 表單編號A0101 第11頁/共25頁 0992044297-0099125222 Form No. A0101 Page 11 of 25 0992044297-0

Claims (1)

201205867 七、申請專利範圍: 1 . 一種發光二極體封裝結構,包括一基板,設於基板的第一 表面上的一發光二極體晶片,與發光二極體晶片電連接的 二電極,及密封發光二極體晶片的封裝體,其改良在於: 所述基板的一第二表面上設有至少一溝槽。 2 .如申請專利範圍第1項所述之發光二極體封裝結構,其中 所述至少一溝槽與基板的邊沿連通。 3 .如申請專利範圍第1項所述之發光二極體封裝結構,其中 所述至少一溝槽呈曲線形、直線形或者網狀。 4 .如申請專利範圍第1項所述之發光二極體封裝結構,其中 所述至少一溝槽的至少部分表面上鍍有金屬。 5 .如申請專利範圍第1項所述之發光二極體封裝結構,其中 所述基板上設有貫穿第一表面與第二表面的導電孔和導熱 孔,導電孔和導熱孔内分別填充導電物質和導熱物質。 6 .如申請專利範圍第5項所述之發光二極體封裝結構,其中 所述基板上靠近發光二極體晶片的區域内的導熱孔的密度 比遠離發光二極體晶片的區域内的導熱孔的密度大。 7 .如申請專利範圍第1項所述之發光二極體封裝結構,其中 所述至少一溝槽的深度為基板的厚度的1/5-1/2。 8 .如申請專利範圍第1項所述之發光二極體封裝結構,還包 括一基座,所述基座圍設在基板周圍,所述電極延伸至基 座外並與基板的第二表面平齊。 9 .如申請專利範圍第1項所述之發光二極體封裝結構,其中 所述基板包括交替設置的、高度不一的非導電物質、導電 物質和導熱物質,且非導電物質、導電物質和導熱物質的 099125222 表單編號A0101 第12頁/共25頁 0992044297-0 201205867 高度差形成所述至少一溝槽。 ίο . —種發光二極體模組,包括板材及設置在板材上的至少一 發光二極體封裝結構,其改良在於:所述至少一發光二極 體封裝結構為申請專利範圍第1-9項中任意一項所述的發 光二極體封裝結構,且所述基板的第二表面貼設在所述板 材上。 Ο 099125222 表單編號A0101 第13頁/共25頁 0992044297-0201205867 VII. Patent application scope: 1. A light emitting diode package structure comprising a substrate, a light emitting diode chip disposed on the first surface of the substrate, and two electrodes electrically connected to the light emitting diode chip, and The package for sealing a light emitting diode chip is improved in that: at least one trench is disposed on a second surface of the substrate. 2. The light emitting diode package structure of claim 1, wherein the at least one trench is in communication with an edge of the substrate. 3. The light emitting diode package structure of claim 1, wherein the at least one trench is curved, linear or mesh. 4. The light emitting diode package structure of claim 1, wherein at least a portion of the surface of the at least one trench is plated with a metal. 5. The light emitting diode package structure according to claim 1, wherein the substrate is provided with a conductive hole and a heat conducting hole penetrating the first surface and the second surface, and the conductive hole and the heat conducting hole are respectively filled with conductive Substances and thermal substances. 6. The light emitting diode package structure of claim 5, wherein a density of the heat conductive holes in the region of the substrate near the light emitting diode wafer is higher than a heat transfer in a region away from the light emitting diode chip. The density of the holes is large. 7. The light emitting diode package structure of claim 1, wherein the at least one trench has a depth of 1/5 to 1/2 of a thickness of the substrate. 8. The light emitting diode package structure of claim 1, further comprising a pedestal surrounding the substrate, the electrode extending outside the pedestal and facing the second surface of the substrate Flush. 9. The light emitting diode package structure according to claim 1, wherein the substrate comprises alternating non-conductive materials, conductive materials and heat conductive materials, and non-conductive materials, conductive materials and 099125222 Form of Heat Conductive Material Form No. A0101 Page 12 of 25 0992044297-0 201205867 The height difference forms the at least one groove. The invention relates to a light-emitting diode module, comprising a plate material and at least one light-emitting diode package structure disposed on the plate material, wherein the at least one light-emitting diode package structure is in the scope of patent application 1-9 The light emitting diode package structure according to any one of the preceding claims, wherein the second surface of the substrate is attached to the plate material. Ο 099125222 Form No. A0101 Page 13 of 25 0992044297-0
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