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TW201139740A - Etchant and method of manufacturing electronic device - Google Patents

Etchant and method of manufacturing electronic device Download PDF

Info

Publication number
TW201139740A
TW201139740A TW099145515A TW99145515A TW201139740A TW 201139740 A TW201139740 A TW 201139740A TW 099145515 A TW099145515 A TW 099145515A TW 99145515 A TW99145515 A TW 99145515A TW 201139740 A TW201139740 A TW 201139740A
Authority
TW
Taiwan
Prior art keywords
etchant
semiconductor layer
group
weight
transition metal
Prior art date
Application number
TW099145515A
Other languages
English (en)
Chinese (zh)
Inventor
Kwi-Hong Park
Ki-Beom Lee
Sam-Young Cho
Byung-Soo Ku
Jeong-Heon Choi
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW201139740A publication Critical patent/TW201139740A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H10P50/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)
TW099145515A 2009-12-24 2010-12-23 Etchant and method of manufacturing electronic device TW201139740A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20090131253 2009-12-24
KR1020100118966A KR101800803B1 (ko) 2009-12-24 2010-11-26 식각액 및 전자소자 제조방법

Publications (1)

Publication Number Publication Date
TW201139740A true TW201139740A (en) 2011-11-16

Family

ID=44404767

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099145515A TW201139740A (en) 2009-12-24 2010-12-23 Etchant and method of manufacturing electronic device

Country Status (4)

Country Link
JP (1) JP2013516064A (ko)
KR (1) KR101800803B1 (ko)
CN (1) CN102666780B (ko)
TW (1) TW201139740A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102092338B1 (ko) * 2013-03-28 2020-03-23 동우 화인켐 주식회사 액정 표시 장치용 어레이 기판의 제조 방법
US9472420B2 (en) 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
KR102260189B1 (ko) * 2015-03-05 2021-06-03 동우 화인켐 주식회사 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
KR102260190B1 (ko) * 2015-03-05 2021-06-03 동우 화인켐 주식회사 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200898B1 (en) 1999-10-25 2001-03-13 Vanguard International Semiconductor Corporation Global planarization process for high step DRAM devices via use of HF vapor etching
US6331486B1 (en) 2000-03-06 2001-12-18 International Business Machines Corporation Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
TW463384B (en) 2000-06-15 2001-11-11 Shr Min Thin film transistor having subgate and Schottky source/drain and the manufacturing method thereof
US7190007B2 (en) 2004-08-05 2007-03-13 International Business Machines Corporation Isolated fully depleted silicon-on-insulator regions by selective etch
JP4551229B2 (ja) * 2005-01-31 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法およびエッチング液
CN101419916B (zh) 2007-10-24 2011-05-11 台湾薄膜电晶体液晶显示器产业协会 薄膜晶体管的制造方法
CN101471413B (zh) * 2007-12-28 2012-06-27 晶元光电股份有限公司 发光元件及其制造方法

Also Published As

Publication number Publication date
JP2013516064A (ja) 2013-05-09
CN102666780B (zh) 2014-11-12
KR20110074430A (ko) 2011-06-30
KR101800803B1 (ko) 2017-11-27
CN102666780A (zh) 2012-09-12

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