TW201026907A - Manufacturing method of monolayer metal nanoparticle thin film - Google Patents
Manufacturing method of monolayer metal nanoparticle thin film Download PDFInfo
- Publication number
- TW201026907A TW201026907A TW98100479A TW98100479A TW201026907A TW 201026907 A TW201026907 A TW 201026907A TW 98100479 A TW98100479 A TW 98100479A TW 98100479 A TW98100479 A TW 98100479A TW 201026907 A TW201026907 A TW 201026907A
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- Taiwan
- Prior art keywords
- metal
- substrate
- metal nanoparticle
- gold
- nanoparticle film
- Prior art date
Links
- 239000002082 metal nanoparticle Substances 0.000 title claims abstract description 67
- 239000002356 single layer Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000010409 thin film Substances 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 132
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 35
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 18
- 239000004094 surface-active agent Substances 0.000 claims abstract description 17
- 238000004070 electrodeposition Methods 0.000 claims abstract description 14
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 9
- 239000010931 gold Substances 0.000 claims description 103
- 229910052737 gold Inorganic materials 0.000 claims description 97
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 84
- 239000002105 nanoparticle Substances 0.000 claims description 62
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 46
- 239000002245 particle Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 40
- 230000008021 deposition Effects 0.000 claims description 26
- 239000003792 electrolyte Substances 0.000 claims description 19
- 229910021645 metal ion Inorganic materials 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- -1 alkyl benzoic acid Chemical compound 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 7
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 241000209094 Oryza Species 0.000 claims description 4
- 235000007164 Oryza sativa Nutrition 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 235000009566 rice Nutrition 0.000 claims description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 4
- 238000002371 ultraviolet--visible spectrum Methods 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000003945 anionic surfactant Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 125000003277 amino group Chemical group 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical group CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N Benzoic acid Natural products OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims 1
- 239000005711 Benzoic acid Substances 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 235000010233 benzoic acid Nutrition 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- 230000007062 hydrolysis Effects 0.000 claims 1
- 238000006460 hydrolysis reaction Methods 0.000 claims 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 58
- 230000008878 coupling Effects 0.000 abstract description 11
- 238000010168 coupling process Methods 0.000 abstract description 11
- 238000005859 coupling reaction Methods 0.000 abstract description 11
- 239000002923 metal particle Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000001179 sorption measurement Methods 0.000 abstract description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000077 silane Inorganic materials 0.000 abstract description 3
- 230000004520 agglutination Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 7
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 238000004220 aggregation Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical class [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000003223 protective agent Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- XEDYWTVVXSKSPQ-UHFFFAOYSA-H C(CC(O)(C(=O)[O-])CC(=O)[O-])(=O)[O-].C(CC(O)(C(=O)[O-])CC(=O)[O-])(=O)[O-].[Bi+3].[Na+].[Na+].[Na+] Chemical compound C(CC(O)(C(=O)[O-])CC(=O)[O-])(=O)[O-].C(CC(O)(C(=O)[O-])CC(=O)[O-])(=O)[O-].[Bi+3].[Na+].[Na+].[Na+] XEDYWTVVXSKSPQ-UHFFFAOYSA-H 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910021607 Silver chloride Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- RZYKUPXRYIOEME-UHFFFAOYSA-N CCCCCCCCCCCC[S] Chemical compound CCCCCCCCCCCC[S] RZYKUPXRYIOEME-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 241000282994 Cervidae Species 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- 241000270276 Natrix Species 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- BTKXSYWWRGMQHR-UHFFFAOYSA-N [amino(diethoxy)silyl]oxyethane Chemical compound CCO[Si](N)(OCC)OCC BTKXSYWWRGMQHR-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000006258 conductive agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- LRBQNJMCXXYXIU-QWKBTXIPSA-N gallotannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@H]2[C@@H]([C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-QWKBTXIPSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 235000021384 green leafy vegetables Nutrition 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- NDDAHWYSQHTHNT-UHFFFAOYSA-N indapamide Chemical compound CC1CC2=CC=CC=C2N1NC(=O)C1=CC=C(Cl)C(S(N)(=O)=O)=C1 NDDAHWYSQHTHNT-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- LZOZLBFZGFLFBV-UHFFFAOYSA-N sulfene Chemical compound C=S(=O)=O LZOZLBFZGFLFBV-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical group CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000010938 white gold Substances 0.000 description 1
- 229910000832 white gold Inorganic materials 0.000 description 1
Landscapes
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
201026907 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種奈米粒子薄膜之製法,特別是才t 一種密集度高的單層金屬奈米粒子薄膜之製法。 【先前技術】 、 近年來由於矽等無機材料短缺,限制了許多科技鹿用 的發展,因此有機材料的發展活絡了起來,但有機材料的效 能仍遠遠不及無機材料,因此,無機材料與有機材料的、纟士人 〇 應用變成目前最熱門的研究,另外,積極尋找其他可替代且 具有較佳應用效能的無機材料也是值得研究開發的方向。 無機材料中以金(Au)最為熱門,由於金的化性與物性穩 定且無生物毒性’因此’一直以來都是科學家感興趣的研究 題材。早年的研究多針對金在水溶液中的性質作探討。近年 來,因發現將金粒子簡在餘上製作成金奈綠子薄棋後 具有特殊的光學性質,因此這類研究成果也如雨後春筍般大 量出現°但是’除了金奈米粒子薄料,以其他種類金屬所 響 製出的奈米粒子薄膜同樣能透過其奈米尺寸的特性產生特殊 的光學與物質性質’及藉由形成固體薄膜的方式增加應用的 方便性。 參閱圖1’以下為現有的—種金奈米粒子薄膜的製法, 該製法包含下列步驟: 步驟101是提供一清洗乾淨的基板; ㈣102是提供—四氣金酸水溶液,並經由特定的處 理程序將該四氯㈣水料製成—金奈餘子水雜,通常 3 201026907 此二種方法的進 利的處理程序為水相合成法或相轉移法, 行方式分別如下所述: ㈣H 纽:進行方式是將已加熱至預定溫度的還 '、合液加人已加熱至預定溫度的四氣金酸水溶液中形成— 混合液’並於定溫下持續授拌一段時間後,再將該混合液置 於2〇C〜3Gt的環境下冷卻,就能製得該金奈米粒子水溶液 其中’還原劑溶液中的還原劑為一選自下列群組中的物質 :檸檬酸、丹寧酸、删氫化納、四級錢鹽,及檸檬酸三納鹽 〇 (2)相轉移法·進行方式是將四氯金酸溶於水,並將四 =錄鹽與正十二烧基硫_溶於甲苯溶液,將前述二種溶液混 β擾拌後’再加人蝴氫化納使該四氣金酸溶液t的金離子 即)被還原為金原子,進而堆積為金奈米粒子及形成該金奈 米粒子水溶液,此時,有機相巾的硫醇會⑽在生成的金奈 米粒子表面’以穩定該等奈米粒子,避免其相互聚集並限制 其粒徑大小。 步驟103疋將該基板浸入已製作好的金奈米粒子水溶❹ 液中’並藉由該基板與金奈米粒子間的吸附力作用大小決定· 浸泡時間,最終可使該等金奈米粒子沉積在該基板上及形成^ 一金奈米粒子薄膜。 ’ 雖然現有的金奈米粒子薄膜的製法已具有可在該基板 上製造出金薄膜材料的特性,但實際仍存有下列缺失: 一、以現有製法製備金奈米粒子薄膜時,須先以水相 合成法或相轉移法配製出金奈米粒子水溶液後,再將基板浸 201026907 入已製備好的金屬奈米粒子溶液中,使該等金奈米粒子在該 基板沉積形成金奈綠子薄膜,其巾,配製該金奈米粒子= 溶液的過程繁靖且耗時,使現有金屬奈米粒子薄膜的製法具 有製造程序較多且較煩雜的缺點。 二、由於一般金奈米粒子與基板間的作甩力不強,而 無法在該基板上形成高密度的金屬奈米粒子薄膜,當該基板 上的金屬奈米粒子密度不高時,也會使其催化特性較不佳, ❿降低應賴果’使現有金屬奈米粒子薄膜的製法相對具有 ® 不易順利製出高密度金屬奈米粒子薄膜的缺點。 八 ,三、由於奈米粒子容易產生自身聚集(aggregati〇n)的情 形,為避免發生這種情況,通常會在配製金屬奈米粒子溶液 時加入檸檬酸鈉或是硫醇類等分子為主的保護劑,以包覆奈 米粒子,使粒子呈分散而不易聚集的狀態M旦具有此種功^ 的保護劑其對粒子的作用力也較大,因此在沉積形成金屬^ 米粒子薄膜後,相對較不易自該等金屬奈米粒子表面去除= ❹ 些保護劑’而影響到該金屬奈米粒子薄膜的性能與應用性? 四、以現有製法所製出的金屬奈米粒子薄膜易形成多 ' ㈣式,而多層的金屬奈米粒子薄膜容易形成聚集而雜亂 ' 的排列狀態,同樣會使該金屬奈米粒子薄膜的光電性能受 到影響’而降低其應用性。 【發明内容】 因此,本發明的目的,是在提供一種以製程相對較簡 單且成本便宜的電化學沉積法,直接在一基板上合成單層 且高密度的金屬奈米粒子薄膜的單層金屬奈米粒子薄膜之 5 201026907 製法。 於是,本發明單層金屬奈米粒子薄膜之製法,包含下 列步驟: ⑴提供一經矽烷偶聯類分子修飾的基板; (ii) 配製一金屬電解液,該金屬電解液包含依預定比例 相混*合的一金屬化合物組份及一界面活性劑組份,該金屬 化合物組份中具有多數個分別結合有預定金屬離子的金屬 化合物;及 (iii) 將經修飾的基板直接浸入該金屬電解液中,並以電 化學沉積方式使該金屬化合物組份中的該等金屬離子被還 原.為金屬奈米粒子’及在該基板沉積形成一金屬奈米粒子 薄膜。 本發明的有益效果在於:配合電化學沉積方式,直接 將該基板浸入該金屬電解液中就能形成該金屬奈米粒子薄 膜,並能藉由該金屬電解液中的界面活性劑,直接在由該 等金屬離子所還原形成的金屬奈米粒子表面形成一層分子 膜’以有效防止相互聚集的情形,配合以矽烷偶聯類分子 修飾的基板,使該等金屬奈米粒子與該等石夕烧偶聯類分子 間形成穩定的共價鍵結,及減少金屬粒子與金屬粒子間鍵 結聚集而生長成較大粒徑的金屬粒子的情形,藉此,可製 出粒徑較小且密度較高的金屬奈米粒子薄膜’使本發明可 以較簡單及成本較低的電化學沉積法製出單層且高密度的 金屬奈米粒子薄膜,使所製出的金屬奈米粒子薄膜相對能 表現較佳的應用效能,而具有可商業化應用的價值。 201026907 【實施方式】 有關本發明之前述及其他技術内容、特點與功效,在 以下配合參考圖式之一個較佳實施例的詳細說明中,將可 清楚的呈現。 參閱圖2與圖3,本發明單層金屬奈米粒子薄膜之製法 的較佳實施例包含下列步驟: 步驟201是提供一經矽烷偶聯類分子修飾的基板31。 其中,該矽烷偶聯類分子的一端具有一選自下列群組 鲁中的基團:硫醇基(-SH)及氨基(-NH3)。為了之後能在基板 沉積形成較高密度且粒徑小的金屬奈米粒子薄膜,較佳是 使用具有硫醇基的矽烷偶聯類分子,在該較佳實施例中’ 是使用硫.醇基丙基三甲氧基矽烷((3-mercaptopropyl)trimethoxysilane,簡稱為 MPTMS)作為該石夕 烷偶 (如下: och3 hs、/\^uoch3 0ch3201026907 VI. Description of the Invention: [Technical Field] The present invention relates to a method for preparing a nanoparticle film, and more particularly to a method for producing a highly dense single-layer metal nanoparticle film. [Prior Art] In recent years, due to the shortage of inorganic materials such as germanium, the development of many technology deer has been limited. Therefore, the development of organic materials has become more active, but the effectiveness of organic materials is still far less than that of inorganic materials. Therefore, inorganic materials and organic materials The use of materials and gentlemen's applications has become the most popular research. In addition, actively looking for other alternative inorganic materials with better application performance is also worth researching. Among the inorganic materials, gold (Au) is the most popular, and because of its chemical and physical properties, it is not biologically toxic. Therefore, it has always been a research subject of interest to scientists. Early studies have focused on the properties of gold in aqueous solutions. In recent years, because of the special optical properties found after the gold particles have been made into Jinnai Greens, the results of such research have sprung up in large numbers. However, 'except for the thin particles of Jinnai, other The nanoparticle film produced by the type of metal can also produce special optical and material properties through its nanometer size characteristics and increase the convenience of application by forming a solid film. Referring to FIG. 1', the following is a method for preparing a gold nanoparticle film, which comprises the following steps: Step 101 is to provide a cleaned substrate; (4) 102 is to provide a four-gas gold acid aqueous solution, and through a specific processing procedure The tetrachloro (tetra) water material is made into - Chennai Yuzi water miscellaneous, usually 3 201026907. The processing procedure of the two methods is the water phase synthesis method or the phase transfer method, and the rows are respectively as follows: (4) H New Zealand: The method comprises the steps of: forming a mixture liquid that has been heated to a predetermined temperature, and adding a liquid mixture to a predetermined temperature, and continuously mixing the mixture for a period of time at a constant temperature, and then mixing the mixture. The liquid is cooled in an environment of 2〇C~3Gt, and the aqueous solution of the gold nanoparticle is prepared. The reducing agent in the reducing agent solution is a substance selected from the group consisting of citric acid, tannic acid, Dehydrogenation, quaternary money salt, and trisodium citrate bismuth (2) phase transfer method. The method is to dissolve tetrachloroauric acid in water, and dissolve the tetra-alkaline salt and the n-dodecyl-sulfur In the toluene solution, the above two solutions are mixed and mixed with β 'Adding a hydrogen halide to the gold ion of the four-gas gold acid solution t to be reduced to a gold atom, and then depositing as a gold nanoparticle and forming an aqueous solution of the gold nanoparticle, at this time, the sulfur of the organic phase towel The alcohol will (10) on the surface of the formed gold nanoparticles to stabilize the nanoparticles, avoiding their aggregation and limiting their particle size. Step 103: immersing the substrate in the prepared gold nanoparticle water-soluble mash liquid and determining the immersion time by the adsorption force between the substrate and the gold nanoparticles, and finally obtaining the gold nanoparticles Deposited on the substrate and formed a film of gold nanoparticles. Although the existing method for preparing the gold nanoparticle film has the characteristics of producing a gold thin film material on the substrate, there are actually the following defects: 1. When preparing the gold nanoparticle film by the existing method, it is necessary to first After the aqueous solution of gold nanoparticles is prepared by aqueous phase synthesis or phase transfer method, the substrate is immersed in 201026907 into the prepared metal nanoparticle solution, and the gold nanoparticles are deposited on the substrate to form the Chennai green seed. The process of preparing the gold nanoparticle=solution of the film, the towel thereof is complicated and time consuming, and the method for preparing the conventional metal nanoparticle film has many disadvantages of being complicated and complicated to manufacture. Second, because the general interaction between the gold nanoparticles and the substrate is not strong, and it is impossible to form a high-density metal nanoparticle film on the substrate, when the density of the metal nanoparticles on the substrate is not high, The catalytic properties are not good, and the reduction of the effect is that the existing metal nanoparticle film has a disadvantage that it is difficult to produce a high-density metal nanoparticle film. Eight or three, because the nanoparticles are prone to self-aggregation (aggregati〇n), in order to avoid this, it is common to add sodium citrate or thiol to the metal nanoparticle solution. The protective agent covers the nano particles, so that the particles are dispersed and not easy to aggregate. The protective agent having such a function has a large force on the particles, and therefore, after depositing a metal film of the metal particles, It is relatively difficult to remove the surface protective properties of these metal nanoparticles to affect the properties and applicability of the metal nanoparticle film. 4. The metal nanoparticle film produced by the existing method is easy to form. '(4), and the multilayer metal nanoparticle film tends to form agglomerated and messy 'arrangement, which also affects the photoelectric properties of the metal nanoparticle film' and reduces its applicability. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a single layer metal of a single layer and high density metal nanoparticle film directly on a substrate by an electrochemical deposition method which is relatively simple and inexpensive. Nanoparticle film 5 201026907 method. Therefore, the method for preparing the single-layer metal nanoparticle film of the present invention comprises the following steps: (1) providing a substrate modified with a decane-coupled molecule; (ii) preparing a metal electrolyte, the metal electrolyte comprising a predetermined ratio* a metal compound component having a plurality of metal compounds respectively combined with a predetermined metal ion; and (iii) directly immersing the modified substrate in the metal electrolyte And electrochemically depositing the metal ions in the metal compound component to be reduced. It is a metal nanoparticle' and depositing a thin film of a metal nanoparticle on the substrate. The invention has the beneficial effects that the metal nanoparticle film can be formed by directly immersing the substrate in the metal electrolyte solution by electrochemical deposition, and can be directly used by the surfactant in the metal electrolyte solution. a metal film formed on the surface of the metal nanoparticles formed by the reduction of the metal ions to effectively prevent mutual aggregation, and a substrate modified with a decane-coupled molecule, such metal nanoparticles and the same A stable covalent bond is formed between the coupled molecules, and a metal particle having a larger particle diameter is formed by reducing the bonding between the metal particles and the metal particles, thereby making the particle size smaller and the density smaller. The high-strength metal nanoparticle film enables the present invention to produce a single-layer and high-density metal nanoparticle film by a relatively simple and low-cost electrochemical deposition method, so that the prepared metal nanoparticle film can be relatively more stable. Good application performance, and the value of commercial applications. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments. Referring to Figures 2 and 3, a preferred embodiment of the process for producing a single-layered metal nanoparticle film of the present invention comprises the following steps: Step 201 is to provide a substrate 31 modified with a decane-coupled molecule. Wherein one end of the decane-coupled molecule has a group selected from the group consisting of a thiol group (-SH) and an amino group (-NH3). In order to deposit a metal nanoparticle film having a higher density and a smaller particle diameter after deposition on the substrate, it is preferred to use a decane-coupled molecule having a thiol group, and in the preferred embodiment, a sulfur-alcohol group is used. Propyltrimethoxysilane (MPTMS) is used as the astaxantane (see below: och3 hs, /\^uoch3 0ch3)
該基板31是選用具有導電性質的基板,在該實施例中 ,該基板具有一導電薄膜,該導電薄膜為一選自下列群組 中的材質所製成:氧化銦錫(tin-doped indium oxide,簡稱 為 ITO)、氧化鋅銦(indium-doped zinc oxide,簡稱為 IZO) 、氧化辞銘(aluminum-doped zinc oxide,簡稱為 AZO),及 氧化鋅錄(gallium-doped zinc oxide,簡稱為 GZO)。 7 201026907 該基板31進行修飾前須先經清洗處理與去除氧化層處 理’使該基板露出氫氧基端(·_,如此可使基板順利地愈 矽烷偶聯類分子進行水解聚合的反應。 、 步驟202是配製-金屬電解液3〇,該金屬電解液%包 含依預定比例相混合的一金屬化合物組份及一界面活性劑 組份,該金屬化合物組份中具有多數個分別結合有預定金 屬離子的金屬化合物。 其中,該金屬化合物組份中的該等金屬離子為一選自 下歹J群組中的金屬所形成:金、銀、銅、釘(Ru)、飾心)、 鐵及錄。在該較佳實施例中,該等金屬離子實質上為金離 子,及該金屬化合物組份中的該等金屬化合物是使用四氣 金酸(H(AuC14))。 步驟203是將經修飾的基板31直接浸入該金屬電解液 30中,並以電化學沉積方式使該金屬化合物組份中的該等 金眉離子被還原為金屬奈練子,及在該基板31沉積形成 一金屬奈米粒子薄膜^ 較佳地,電化學沉積方式是採用以一工作電極41、一 輔助電極42及一參考電極43所形成的三電極系统4〇,且 該工作電極41是與已修飾㈣院偶聯類分子的基板31相 連接該輔助電極42為白金絲,及該參考電極43為銀/氣 化銀(Ag/AgCl)。藉此,使該金屬電解液3〇中的金屬離子被 還原為金>1原子後’再與該基板31上的㈣偶聯類分子共 價鍵結,以在該基板31沉積形成該金屬奈米粒子薄膜。在 該實施例中’疋使該金屬電解液3Q中的四氣金酸中的金離 201026907 子還原為金奈米粒子後’再與該矽烷偶聯類分子共價鍵結 而在該基板31形成該金屬奈米粒子薄膜。 較佳地’在步驟203中的界面活性劑可充當電解質, 並能利用其親水端的負電環境來達到吸引金屬離子的效果 。界面活性劑除了可以幫助導電外,還可以作為穩定劑以 防止金屬粒子聚集的現象,而兼具有助導電劑和穩定劑的 功能。因此,藉由界面活性劑在固液表面上的吸附作用, 使其能在被還原的金屬奈米粒子表面形成一層分子膜,阻 礙粒子間相互接觸,防止聚集。且該界面活性劑較佳是選 用陰離子型的界面活性劑,以藉由其親水的優點,而能在 反應完成後,以水潤洗就能去除,以免殘留的界面活性劑 景夕響到該金屬奈米粒子薄膜的性能。此外,陰離子型界面 活性劑還具有可被生物分解的特性,最能符合現代環保的 需求。在該實施例中,是選用十二烷基苯磺酸 (dodecylbenzenesulfonic acid,簡稱為 DBSA)作為界面活性 劑。其中,DBSA的化學式如下: /-\ 0 CH3(CH2)12—<Tj>-|--〇eNa@ .步驟204疋在該基板31上形成該金屬奈米粒子薄膜後 再乂去離子水巧洗沉積後的基板Η,並用氣氣吹乾。 值得說明的疋,當在該實施例中所配製的金屬電解液 3〇為含有金離子的電解㈣,則會在該基板31形成金奈米 粒子薄膜’在步驟2()1中使用MpTMS修飾該基板31主要 201026907 是藉由其SH基端能夠和金奈米粒子形成穩定的Au-S共價 鍵,由於Au-S鍵的鍵結能(binding energy)相當地強,且比 Au-Au鍵的鍵結能更強,使得Au較傾向於與SH鍵結,而 形成許多金粒子核,而非Au與Au鍵結聚集生長成較大粒 徑的金粒子。因此,能夠利用MPTMS與金奈米粒子間的強 力鍵結能減少Au與Au鍵結聚集成較大粒徑的金粒子,進 而使得以MPTMS修飾而得的基板31配合金屬電解液30進 行電化學沉積時,可在該基板3 1沉積出高密度且粒子較小 的金奈米粒子薄膜。 <具體例> 為方便後續電化學沉積的進行,在此是選用具有導電 性質的基板,目前市面上常用的導電基板有透明導電材料 (transparent conductive oxide,簡稱為 TCO)薄膜的玻璃基板 ,例如ITO、IZO、AZO、GZO,以及各種金屬片如金片 (Au)、白金片(Pt)等。以下是在ITO基板上沉積形成一層金 奈米粒子薄膜的具體例。 (1) .基板的清洗 先將基板裁成1x4 cm的大小。再依序放入不同溶劑 中清洗,其順序為丙酮—肥皂水—去離子水,在各溶劑中 分別利用超音波振盪清洗20分鐘。 (2) .有機分子MPTMS的修飾(modified)The substrate 31 is made of a substrate having a conductive property. In this embodiment, the substrate has a conductive film made of a material selected from the group consisting of tin-doped indium oxide. , abbreviated as ITO), indium-doped zinc oxide (abbreviated as IZO), aluminum-doped zinc oxide (abbreviated as AZO), and gallium-doped zinc oxide (GZO) ). 7 201026907 The substrate 31 must be subjected to a cleaning treatment and a removal of the oxide layer before the modification. The substrate is exposed to a hydroxyl group end (·_, so that the substrate can be smoothly hydrolyzed by the sulfonate-coupled molecule. 202 is a preparation-metal electrolyte 3〇, the metal electrolyte% comprises a metal compound component and a surfactant component mixed in a predetermined ratio, and a plurality of the metal compound components are respectively combined with a predetermined metal ion a metal compound, wherein the metal ions in the metal compound component are formed from a metal selected from the group consisting of: a group of gold, silver, copper, nails, ornaments, iron, and . In the preferred embodiment, the metal ions are substantially gold ions, and the metal compounds in the metal compound component are four gas gold acids (H(AuC14)). Step 203 is: directly immersing the modified substrate 31 into the metal electrolyte 30, and electrochemically depositing the gold eyebrow ions in the metal compound component to be reduced to metal natrix, and on the substrate 31. Deposition to form a thin film of metal nanoparticles. Preferably, the electrochemical deposition method uses a three-electrode system 4〇 formed by a working electrode 41, an auxiliary electrode 42 and a reference electrode 43, and the working electrode 41 is The substrate 31 to which the (four) courtyard-coupled molecule has been modified is connected to the auxiliary electrode 42 as a platinum wire, and the reference electrode 43 is silver/vaporized silver (Ag/AgCl). Thereby, the metal ions in the metal electrolyte solution 3 are reduced to gold > 1 atom, and then covalently bonded to the (d) coupling type molecule on the substrate 31 to deposit the metal on the substrate 31. Nanoparticle film. In this embodiment, 'the gold in the tetra-gas gold acid in the metal electrolyte 3Q is reduced from 201026907 to the gold nanoparticle, and then re-bonded to the decane-coupled molecule on the substrate 31. The metal nanoparticle film is formed. Preferably, the surfactant in step 203 acts as an electrolyte and can utilize the negatively charged environment of its hydrophilic end to achieve the effect of attracting metal ions. In addition to helping to conduct electricity, surfactants can also act as stabilizers to prevent metal particles from agglomerating, and have the function of a conductive agent and a stabilizer. Therefore, by the adsorption of the surfactant on the solid surface, it is possible to form a molecular film on the surface of the reduced metal nanoparticles, thereby preventing the particles from coming into contact with each other and preventing aggregation. Preferably, the surfactant is an anionic surfactant, so that by virtue of its hydrophilicity, it can be removed by water rinsing after the reaction is completed, so as to prevent the residual surfactant from ringing. The properties of metal nanoparticle films. In addition, anionic surfactants have biodegradable properties that best meet the needs of modern environmental protection. In this embodiment, dodecylbenzenesulfonic acid (DBSA) is used as a surfactant. Wherein, the chemical formula of DBSA is as follows: /-\ 0 CH3(CH2)12-<Tj>-|--〇eNa@. Step 204: forming the metal nanoparticle film on the substrate 31 and then deionizing the ionized water The deposited substrate is carefully washed and dried with air. It is worth noting that when the metal electrolyte 3 配制 prepared in this embodiment is electrolytic (4) containing gold ions, a gold nanoparticle film is formed on the substrate 31 'MpTMS is modified in step 2 () 1 The substrate 31 mainly 201026907 is capable of forming a stable Au-S covalent bond with the gold nanoparticles by its SH base end, since the binding energy of the Au-S bond is quite strong and is higher than Au-Au. The bond of the bond is stronger, so that Au tends to bond with SH, and many gold particle nuclei are formed, instead of the Au and Au bond aggregates and grow into gold particles of larger particle size. Therefore, the strong bond between the MPTMS and the gold nanoparticles can be used to reduce the Au and Au bond aggregation to integrate the larger particle size of the gold particles, and the substrate 31 modified with the MPTMS can be electrochemically coupled with the metal electrolyte 30. At the time of deposition, a film of gold nanoparticles having a high density and a small particle size can be deposited on the substrate 31. <Specific Example> In order to facilitate the subsequent electrochemical deposition, a substrate having a conductive property is selected, and a conductive substrate commonly used in the market currently has a transparent conductive oxide (TCO) thin film. For example, ITO, IZO, AZO, GZO, and various metal sheets such as gold (Au), platinum (Pt), and the like. The following is a specific example of depositing a film of a layer of gold nanoparticles on an ITO substrate. (1) Cleaning of the substrate The substrate is first cut to a size of 1 x 4 cm. The mixture was washed in a different solvent in the order of acetone-soap-deionized water, and ultrasonically shaken for 20 minutes in each solvent. (2). Modification of organic molecule MPTMS (modified)
將清洗好的基板放入過飽和的氫氧化鈉(NaOH)溶液 中浸泡30分鐘,用去離子水仔細徹底的清洗並用氮氣(N2) 吹乾。此步驟是為了去除基板上的氧化層,使基板露出OH 201026907 端,如此可使基板與MPTMS這類的矽烷偶聯類分子順利進 行水解聚合(sol-gel)的反應,形成Si-O-Si的穩定共價鍵, 使MPTMS牢固地結合在基板表面。此外,也可用電漿 (Plasma)法或是利用食人魚溶液浸泡的方式來去除基板上的 氧化層。 上述的食人魚溶液(piranha clean)為H2S〇4與Η2〇2 的混合液,主要是藉由h2so4的強氧化性來破壞有機物中 的碳氫鍵結,硫酸可以造成有機物脫水而碳化,而雙氧水 Φ 可將碳化產物氧化成一氧化碳或二氧化碳氣體。 接著,將該基板放入1 mM的MPTMS的乙醇溶液 (99·5%)中,在室溫下浸泡一小時。 浸泡後的基板再用乙醇溶液(99.5%)清洗,並放入80°C 的烘箱中烘乾2小時。 (3) .金電解液的配製 為了使金奈米粒子沉積在基板上時能分散性良好,因 此利用界面活性劑來做為保護劑。在此是選用陰離子型界 ® 面活性劑DBSA來進行實驗。 先稱取 0.0042 g(1.2Xl(T6 mol)的 DBSA 加入 10ml 18M . Ω超純水中。另外再取2xl0_4 Μ的HAuCU溶液0.2 ml加 入已配好的DBSA溶液中,利用超音波震盪使均勻混合。 (4) .金粒子薄膜的沉積 如圖3所示,以三電極系統進行電化學沉積,工作電 極是已修飾MPTMS的ITO基板,輔助電極為白金絲,參考 電極為Ag/AgCl。 11 201026907 將已清洗好的基板浸入已製作好的金奈米粒子溶液中 ’浸泡時間端看基板和金奈米粒子間的吸附作用力大小來 決定’基板和金奈米粒子之間的吸附作用力可藉由基板的 修飾’如前面所提到利用矽烷偶聯基的分子進行修飾,矽 烷偶聯基另一段可為SH或是NH3等分子,可改變基板和金 奈米粒子之間的作用力大小。 根據文獻的記載,由於HAuCU . 3ΗζΟ無論施加正或負 的電壓皆可形成金奈米粒子,只是形成的粒子晶體結構不 同(如十二面體或是二十面體),為了防止施加過大的電壓造❹ 成水的解離(水的解離電位約在±〇.8eV),因此,在該具體例 中是對含有金離子的電解液加_〇7eV的電位來進行電化學 沉積。 沉積後立即使用去離子水仔細的清洗沉積後的基板, 並用氮氣(N2)吹乾。 參閱圖4,為由前述方法所製得的金屬奈米粒子薄膜經 月t*量散佈光譜儀(Energy dispersive spectrometer)檢驗所取得 的EDS圖,由該圖形的顯示結果與數據可知,利用本發明泰 的製法,當將經MPTMS修飾的基板浸入含有金離子的金電 解液中時,配合電化學沉積系統在該基板上沉積形成的金 屬奈米粒子薄膜中的金屬為金。 如圖5(b)所示,則為以MpTMS修飾的基板進行金的電 化學沉積後所取得的SEM圖,顯示沉積在該等金奈米粒子 是以小粒徑且高密度的狀態沉積於該基板上。 <分別以不同矽烷偶聯類分子修飾的基板及未經修飾的 12 201026907 基板進行金奈米粒子沉積所製得的金屬奈米粒子薄膜>The cleaned substrate was immersed in a supersaturated sodium hydroxide (NaOH) solution for 30 minutes, carefully rinsed thoroughly with deionized water and blown dry with nitrogen (N2). This step is to remove the oxide layer on the substrate and expose the substrate to the OH 201026907 end. This allows the substrate to react with sulfene-coupled molecules such as MPTMS to form a sol-gel reaction to form Si-O-Si. The stable covalent bond allows the MPTMS to be firmly bonded to the substrate surface. Alternatively, the oxide layer on the substrate can be removed by plasma or by immersion in a piranha solution. The above piranha clean is a mixture of H2S〇4 and Η2〇2, mainly by the strong oxidizing property of h2so4 to destroy the hydrocarbon bond in the organic matter, and the sulfuric acid can cause the organic matter to be dehydrated and carbonized, and the hydrogen peroxide Φ The carbonized product can be oxidized to carbon monoxide or carbon dioxide gas. Next, the substrate was placed in a 1 mM solution of MPTMS in ethanol (99.5%), and immersed at room temperature for one hour. The soaked substrate was washed with an ethanol solution (99.5%) and placed in an oven at 80 ° C for 2 hours. (3) Preparation of gold electrolyte In order to deposit the gold nanoparticles on the substrate, the dispersibility is good, so that the surfactant is used as a protective agent. Here, an anionic boundary surfactant DBSA was used for the experiment. Weigh 0.0042 g (1.2Xl (T6 mol) of DBSA into 10ml of 18M. Ω ultrapure water. Also add 0.2ml of 2xl0_4 HA HAuCU solution to the prepared DBSA solution, and use ultrasonic vibration to evenly mix. (4) The deposition of gold particle film is shown in Figure 3. Electrochemical deposition is performed by a three-electrode system. The working electrode is an ITO substrate with modified MPTMS, the auxiliary electrode is white gold wire, and the reference electrode is Ag/AgCl. 11 201026907 The immersed substrate is immersed in the prepared gold nanoparticle solution, and the adsorption force between the substrate and the gold nanoparticle is determined by the soaking time end to determine the adsorption force between the substrate and the gold nanoparticle. The modification of the substrate is modified by the molecule of the decane coupling group as mentioned above, and the other portion of the decane coupling group may be a molecule such as SH or NH3, which can change the force between the substrate and the gold nanoparticles. According to the literature, due to the application of positive or negative voltages, HAuCU can form gold nanoparticles, but the crystal structure of the particles is different (such as dodecahedron or icosahedron), in order to prevent Excessive voltage is applied to dissociate the water (the dissociation potential of water is about ± e 8 eV). Therefore, in this specific example, the potential of _ 〇 7 eV is applied to the electrolytic solution containing gold ions for electrochemical deposition. Immediately after deposition, the deposited substrate was carefully washed with deionized water and dried with nitrogen (N2). Referring to Figure 4, the metal nanoparticle film prepared by the above method was diffused by a monthly t* spectrometer (Energy dispersive) Spectrometer) The EDS diagram obtained by the inspection, from the display results and data of the graph, the method of the invention is used, when the MPTMS-modified substrate is immersed in a gold electrolyte containing gold ions, the electrochemical deposition system is used. The metal in the metal nanoparticle film deposited on the substrate is gold. As shown in Fig. 5(b), an SEM image obtained by electrochemical deposition of gold on a substrate modified with MpTMS is shown to be deposited thereon. The gold nanoparticles are deposited on the substrate in a small particle size and high density state. <Substrates modified with different decane coupling molecules and unmodified 12 201026907 substrates, respectively Prepared nanoparticles deposited metal nanoparticle thin film >
準備五片經修飾特定分子修飾或未經修飾的ITO基板 ,分為A基板、B基板、C基板、D基板、E基板,再分別 以這五片基板進行如具體例的金奈米粒子沉積,以在該等 基板上沉積形成金奈米粒子薄膜,並用掃描式電子顯微鏡 觀察所形成的薄膜形態,其中A基板〜D基板為分別以四種 不同矽烷偶聯類分子修飾的基板,E基板為未經修飾的ITO 基板 ,且 A 基 板為經 APTES((3-aminopropyl)triethoxysilane)修飾的基板,B _ 基板為經Prepare five modified or unmodified ITO substrates, which are divided into A substrate, B substrate, C substrate, D substrate, E substrate, and then perform gold nanoparticle deposition as a specific example with these five substrates, respectively. Forming a gold nanoparticle film on the substrates, and observing the formed film morphology by a scanning electron microscope, wherein the A substrate to the D substrate are substrates modified with four different decane coupling molecules, respectively, and the E substrate An unmodified ITO substrate, and the A substrate is a substrate modified by APTES ((amino)triethoxysilane), and the B _ substrate is
MPTMS((3-mercaptopropyl)trimethoxysilane)修飾的基板,C 基板為經 GPTS((3-glycidoxyproplytrimethoxysilane))修饰的 基板,及D基板為經(Trimethoxysilyl)benzene修飾的基板 ,這四種矽烷偶聯類分子的化學結構式如下: h3cMPTMS ((3-mercaptopropyl) trimethoxysilane) modified substrate, C substrate is GPTS ((3-glycidoxyproplymethoxy silane)) modified substrate, and D substrate is (Trimethoxysilyl) benzene modified substrate, these four decane coupling molecules The chemical structure is as follows: h3c
3-GtycidoxypropyltnmelboxysilaBe (GPTS)3-GtycidoxypropyltnmelboxysilaBe (GPTS)
(3-ΑηΙ·ορΓ〇ρ^〇ΐΓΪ^^οχγ5〇Μβ (APTES) OCH3 OCH3 /〒'och3 och3(3-ΑηΙ·ορΓ〇ρ^〇ΐΓΪ^^οχγ5〇Μβ (APTES) OCH3 OCH3 /〒'och3 och3
Si-OCH I OCH3 3 (bim^flioxysilyQbaizencSi-OCH I OCH3 3 (bim^flioxysilyQbaizenc
(3-MercaptopiOpyi)tiimeti»oxysflaBC(3-MercaptopiOpyi)tiimeti»oxysflaBC
13 201026907 根據上述的化學結構式,可看出且A、B、C、D基板 上的矽烷偶聯類分子的一端的基團分別為氨基(-NH2)、硫醇 基(-SH)、環氧基("V)、苯基(Ό)。 ❹ 其中,A基板、B基板、C基板、D基板上沉積的金奈米粒 子薄膜的SEM圖分別如圖5的(a)、(b)、(c)、(d)所示,E 基板上沉積的金奈米粒子薄膜的SEM圖則如圖6所示,由 圖式結果可看出未經修飾的E基板,與經矽烷偶聯類分子 修飾的A基板〜D基板相較,其沉積後得到的不是分散的金 粒子而是相互接合(coalescence)的金膜,顯示經有機分子修 飾過的A基板〜D基板確實會影響金奈米粒子的沉積型態, 因此,經矽烷偶聯類分子修飾的基板可使沉積在其上的金 奈米粒子得分散狀態分佈。再分別比較圖5的(a)、(b)、(c) 、(d),發現以SH為尾端的矽烷偶聯類分子MPTMS修飾後 的B基板相對可沉積形成高密度且粒徑小的金奈米粒子, 顯示具有不同基端的矽烷偶聯類分子也會因為其基端與金 屬離子間的作用力強度不同而影響到金奈米粒子的沉積型 態,此結果主要是基於MPTMS的SH基端能夠和金奈米粒 子形成穩定的Au-S共價鍵,由於Au-S鍵的鍵結能(binding energy)相當地強,約有 120kJ/mol,比 Au-Au 鍵的 50kJ/mol 的鍵結能更強,使得Au較傾向於與SH鍵結,而形成許多 14 201026907 金粒子核,而非Au與Au鍵結聚集生長成較大粒徑的金粒 子,因此,以MPTMS修飾的B基板相對於其他種類的矽烷 偶聯類分子修飾的基板,可沉積出密度較高且粒徑較小的 單層金奈米粒子薄膜。 參閲圖7,顯示沉積於固體基板上的金粒子間的平均粒 徑會隨著沉積時間的增加而增加,因此,能藉由調整該金 奈米粒子的沉積時間,可控制該等金奈米粒子的粒徑大小 # ,進而能夠依應用需求,在該基板上沉積出具有預定平均 粒徑的金奈米粒子薄膜。 值得一提的是,一般金奈米粒子未沉積在基板時的uv_ Vis吸收波長位置是在52〇nm,當將經MpTMs修飾的基板 浸入含有金離子的金電解液中,以在該基板沉積金奈米粒 子,且沉積電位設定為_〇 7V,沉積時間分別為5〇秒、 秒、150 秒、200 秒、250 秒、3〇〇 秒、35〇 秒、4〇〇 秒、 秒5〇〇私時,則沉積後的基板顏色會從透明無色變成 叙、色至藍色。參閱圖8,分別取前述不同沉積時間的基板 進行UV-Vis吸收圖譜的量測,顯示當沉積時間從秒拉 長至500秒時,金奈米粒子的表面電漿帶(surface plasma nd)會從559nm紅位移至6〇〇nm左右,再利用uv vis吸 收f長對沉積時間作圖,可得到如圖9的關係曲線。會產 '言種、’口果主要;^因為與散布於水溶液中的金奈米粒子時 相比’在U體基板上的金奈米粒子間的距離會縮短狼多, 且隨著沉積時間的增長,金奈米粒子的粒徑變大,導致粒 15 201026907 子間距變近,因此粒子間的電子雲距離也更近,造成近場 (Near-field)能量急遽增加,而更容易產生電子的集體振盪現 象,因此,造成UV-Vis吸收波長的紅位移。藉此,還能利 用不同沉積時間所形成不同粒徑的金奈米粒子的光學特性 ,進一步開發其應用潛力。 歸納上述,本發明單層金屬奈米粒子薄膜之製法,可 獲致下述的功效及優點,故能達到本發明的目的: 一、配合電化學沉積方式,並利用界面活性劑dbsa 就能夠防止金屬電解液中還原的金屬奈米粒子聚集,再透❿ 過經矽偶聯類分子修飾的基板,使該等金屬奈米粒子穩定 地結合至該基板並形成單層、密度較高與粒徑相對較小的 薄膜沉積形態,使本發明藉由使用適當的界面活性劑與經 特定修飾的基板就能以製程相對較簡單,成本便宜的電化 學沉積方式,在該基板上直接合成單層金屬奈米粒子薄膜 ,而具有可供商業應用的價值。 一、除了能藉由本發明的製法在該基板形成單層金屬 奈米粒子薄膜外’還能夠利用沉積時間的長短控制沉積在❹ 該基板上的該等金屬奈米粒子的粒徑,以進一步利用不同 粒徑所造成的特性,供特定需求使用,例如,當金屬奈米 粒子的粒徑大小不同時,會使其uv_vis吸收波長發生變化 ,使本發明具有可進一步開發其應用範圍的潛力。 三、當沉積於該基板上的金屬奈米粒子薄膜為金時, 能夠利用金(Au)無生物毒性的特性進一步結合特定的生物分 子鍵結為生物分子模板’而具有可應用於生物科技產品的 16 201026907 潛力。 惟以上所述者,僅為本發明之較佳實施例而已,當不 能以此限定本發明實施之範圍,即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾,皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一流程圖,說明現有的一種金奈米粒子薄膜的 製法; '13 201026907 According to the above chemical structural formula, it can be seen that the groups at one end of the decane-coupled molecules on the A, B, C, and D substrates are amino (-NH2), thiol (-SH), and ring, respectively. Oxy ("V), phenyl (Ό). SEM, wherein the SEM images of the gold nanoparticle film deposited on the A substrate, the B substrate, the C substrate, and the D substrate are as shown in (a), (b), (c), and (d) of FIG. 5, respectively, and the E substrate. The SEM image of the deposited gold nanoparticle film is shown in Fig. 6. As shown in the figure, the unmodified E substrate is compared with the A substrate to the D substrate modified by the decane coupling molecule. The gold film obtained by deposition is not a dispersed gold particle but a coalescence, which shows that the A substrate to the D substrate modified by the organic molecule does affect the deposition type of the gold nanoparticle, and therefore, the decane coupling The molecularly modified substrate allows the gold nanoparticles deposited thereon to be distributed in a dispersed state. Further comparing (a), (b), (c), and (d) of FIG. 5, respectively, it was found that the B substrate modified with the decane-coupled molecule MPTMS having the tail end of SH is relatively depositable to form a high density and a small particle diameter. The gold nanoparticles show that the decane-coupled molecules with different base ends also affect the deposition type of the gold nanoparticles due to the different strength between the base end and the metal ions. The result is mainly based on the MPTMS SH. The basal end can form a stable Au-S covalent bond with the gold nanoparticles, and the binding energy of the Au-S bond is quite strong, about 120kJ/mol, 50kJ/mol than the Au-Au bond. The bond can be stronger, so that Au is more prone to bond with SH, and many 14 201026907 gold particle nuclei are formed instead of Au and Au bond aggregates to grow into larger particle size gold particles. Therefore, it is modified by MPTMS. The B substrate can deposit a single-layered gold nanoparticle film having a higher density and a smaller particle size than the substrate of other kinds of decane-coupled molecules. Referring to FIG. 7, it is shown that the average particle size between the gold particles deposited on the solid substrate increases as the deposition time increases. Therefore, the Chennai can be controlled by adjusting the deposition time of the gold nanoparticles. The particle size of the rice particles is #, and further, a gold nanoparticle film having a predetermined average particle diameter can be deposited on the substrate according to application requirements. It is worth mentioning that the uv_ Vis absorption wavelength position when the general gold nanoparticles are not deposited on the substrate is 52 〇 nm, when the MpTMs-modified substrate is immersed in a gold electrolyte containing gold ions to deposit on the substrate. Gold nanoparticles, and the deposition potential is set to _〇7V, and the deposition time is 5 〇, 秒, 150 sec, 200 sec, 250 sec, 3 〇〇, 35 〇, 4 〇〇, 〇 5 分别When smuggling, the color of the substrate after deposition will change from transparent and colorless to color, color to blue. Referring to FIG. 8, the UV-Vis absorption spectra of the substrates with different deposition times are respectively measured, and the surface plasma nd of the gold nanoparticles is measured when the deposition time is extended from seconds to 500 seconds. From 559 nm red shift to about 6 〇〇 nm, and then using uv vis absorption f length to plot the deposition time, the relationship curve shown in Fig. 9 can be obtained. Will produce 'words,' the main fruit; ^ because compared with the gold nanoparticles dispersed in the aqueous solution, the distance between the gold nanoparticles on the U-body substrate will be shortened, and with the deposition time The growth of the particle size of the gold nanoparticles increases, causing the particle spacing of the particles 15 201026907 to become closer, so the electron cloud distance between the particles is also closer, resulting in a near-field energy increase and more easy to generate electrons. The collective oscillation phenomenon, therefore, causes a red shift in the UV-Vis absorption wavelength. Thereby, the optical properties of the different diameters of the gold nanoparticles formed by different deposition times can be utilized to further develop their application potential. In summary, the method for preparing the single-layer metal nanoparticle film of the present invention can achieve the following effects and advantages, so that the object of the present invention can be achieved: 1. The electrochemical deposition method can be used, and the metal can be prevented by using the surfactant dbsa. The metal nanoparticles reduced in the electrolyte are aggregated, and then passed through a substrate modified by a ruthenium-coupled molecule, so that the metal nanoparticles are stably bonded to the substrate and form a single layer, and the density is relatively high and the particle diameter is relatively The smaller film deposition morphology enables the present invention to directly synthesize a single layer of metal naphthalene on the substrate by using a suitable surfactant and a specifically modified substrate in a relatively simple and inexpensive electrochemical deposition process. Rice particle film, and has the value for commercial applications. 1. In addition to forming a single-layered metal nanoparticle film on the substrate by the method of the present invention, it is also possible to control the particle size of the metal nanoparticles deposited on the substrate by the length of deposition time for further utilization. The characteristics caused by different particle sizes are used for specific needs. For example, when the particle size of the metal nanoparticles is different, the uv_vis absorption wavelength is changed, so that the present invention has the potential to further develop its application range. 3. When the metal nanoparticle film deposited on the substrate is gold, it can utilize the non-biotoxic property of gold (Au) to further bind a specific biomolecule to a biomolecular template' and has a biotechnology product. 16 201026907 Potential. The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart illustrating a conventional method for preparing a gold nanoparticle film;
圖2是一流程圖,說明本發明單層金奈米粒子薄膜之 製法一較佳實施例; 圖3是一示意圖,說明該較佳實施例進行電化學沉積 時所使用的三電極系統的配置情形; 圖4是以該較佳實施例所製得的一單層金奈米粒子薄 膜的能量散佈光譜(EDS)圖; ‘ 圖5是一掃描式電子顯微鏡照像圖,說 同矽烷偶聯類分子修飾的基板上、、冗穑# 】在左不 的形態; ㈣丞板h儿積形成金奈米粒子薄膜 圖6是一掃描式電子顯微 ,^ ^ ^ 、基板沉積形成金奈米粒子薄膜的形態; 同沉積時間所形成的金 圖7是一曲線關係圖,說明不 奈米粒子薄骐的平均粒徑; 沉積時間所形成的金 沉積時間所形成的金 圖8是一曲線關係圖,說明不同 奈米粒子薄膜的UV-Vis吸收圖譜;及 圖9是一曲線關係圖,說明不同 17 201026907 奈米粒子薄膜與其UV-Vis吸收波長位置的對應關係。2 is a flow chart showing a preferred embodiment of the method for producing a single-layered gold nanoparticle film of the present invention; and FIG. 3 is a schematic view showing the configuration of a three-electrode system used for electrochemical deposition of the preferred embodiment. Figure 4 is an energy dispersive spectroscopy (EDS) image of a single layer of gold nanoparticle film prepared in the preferred embodiment; 'Figure 5 is a scanning electron microscope photograph showing coupling with decane Molecularly modified on the substrate, 穑 穑 】 】 】 】 】 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The morphology of the particle film; the gold pattern formed by the deposition time is a curve relationship diagram, indicating the average particle size of the thin particles of the nano-particles; the gold deposition time formed by the deposition time is a curve relationship. The figure shows the UV-Vis absorption spectrum of different nano particle films; and FIG. 9 is a curve relationship diagram illustrating the correspondence between different 17 201026907 nano particle films and their UV-Vis absorption wavelength positions.
18 201026907 【主要元件符號說明】 30··.·. •…金屬電解液 41 ··.·· •…工作電極 31..··· 基板 42·.·.· •…輔助電極 40·.··· •…三電極系統 43 ……參考電極18 201026907 [Description of main component symbols] 30·····•...metal electrolyte 41 ·······...Working electrode 31..··· Substrate 42·.····...Auxiliary electrode 40·.· ·· •...three-electrode system 43 ...reference electrode
1919
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