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TW201026754A - Composition for forming sidewall - Google Patents

Composition for forming sidewall Download PDF

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Publication number
TW201026754A
TW201026754A TW098131595A TW98131595A TW201026754A TW 201026754 A TW201026754 A TW 201026754A TW 098131595 A TW098131595 A TW 098131595A TW 98131595 A TW98131595 A TW 98131595A TW 201026754 A TW201026754 A TW 201026754A
Authority
TW
Taiwan
Prior art keywords
group
methyl
ether
forming
composition
Prior art date
Application number
TW098131595A
Other languages
English (en)
Chinese (zh)
Inventor
Daisuke Maruyama
Hiroaki Yaguchi
Yasushi Sakaida
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW201026754A publication Critical patent/TW201026754A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H10P76/204—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
TW098131595A 2008-09-19 2009-09-18 Composition for forming sidewall TW201026754A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008240372 2008-09-19

Publications (1)

Publication Number Publication Date
TW201026754A true TW201026754A (en) 2010-07-16

Family

ID=42039618

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098131595A TW201026754A (en) 2008-09-19 2009-09-18 Composition for forming sidewall

Country Status (3)

Country Link
JP (1) JPWO2010032796A1 (fr)
TW (1) TW201026754A (fr)
WO (1) WO2010032796A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150333269A1 (en) * 2012-12-12 2015-11-19 Daicel Corporation Solvent or solvent composition for manufacturing organic transistor

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5663140B2 (ja) * 2009-01-22 2015-02-04 東京応化工業株式会社 被覆パターン形成方法、レジスト被覆膜形成用材料、パターン形成方法
JP5112380B2 (ja) * 2009-04-24 2013-01-09 信越化学工業株式会社 パターン形成方法
US8728335B2 (en) * 2009-07-23 2014-05-20 Dow Corning Corporation Method and materials for double patterning
US8852848B2 (en) * 2010-07-28 2014-10-07 Z Electronic Materials USA Corp. Composition for coating over a photoresist pattern
JP5661562B2 (ja) * 2011-06-01 2015-01-28 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細パターンマスクおよびその製造方法、ならびにそれを用いた微細パターンの形成方法
JP5829994B2 (ja) * 2012-10-01 2015-12-09 信越化学工業株式会社 パターン形成方法
JP5822986B2 (ja) * 2014-06-16 2015-11-25 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ レジスト被覆膜形成用材料
KR101989707B1 (ko) * 2014-07-08 2019-06-14 도쿄엘렉트론가부시키가이샤 네거티브톤 현상제 겸용 포토레지스트 조성물 및 이용 방법
JP6643833B2 (ja) * 2014-09-26 2020-02-12 東京応化工業株式会社 レジストパターン形成方法、レジストパターンスプリット剤、スプリットパターン改善化剤及びレジストパターンスプリット材料
JP6889381B2 (ja) * 2016-09-01 2021-06-18 Jsr株式会社 基材表面の選択的修飾方法及び組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3974295B2 (ja) * 1999-09-24 2007-09-12 株式会社東芝 パターン形成方法
US7959818B2 (en) * 2006-09-12 2011-06-14 Hynix Semiconductor Inc. Method for forming a fine pattern of a semiconductor device
JP5003279B2 (ja) * 2007-05-21 2012-08-15 Ｊｓｒ株式会社 反転パターン形成方法
TWI452419B (zh) * 2008-01-28 2014-09-11 Ａｚ電子材料Ｉｐ股份有限公司 細微圖案光罩及其製造方法、及使用其之細微圖案形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150333269A1 (en) * 2012-12-12 2015-11-19 Daicel Corporation Solvent or solvent composition for manufacturing organic transistor

Also Published As

Publication number Publication date
JPWO2010032796A1 (ja) 2012-02-16
WO2010032796A1 (fr) 2010-03-25

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