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WO2010032796A1 - Composition permettant de former une paroi latérale - Google Patents

Composition permettant de former une paroi latérale Download PDF

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Publication number
WO2010032796A1
WO2010032796A1 PCT/JP2009/066277 JP2009066277W WO2010032796A1 WO 2010032796 A1 WO2010032796 A1 WO 2010032796A1 JP 2009066277 W JP2009066277 W JP 2009066277W WO 2010032796 A1 WO2010032796 A1 WO 2010032796A1
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WIPO (PCT)
Prior art keywords
group
methyl
composition
sidewall
ether
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Ceased
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PCT/JP2009/066277
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English (en)
Japanese (ja)
Inventor
大輔 丸山
博昭 谷口
康志 境田
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Nissan Chemical Corp
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Nissan Chemical Corp
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Priority to JP2010529793A priority Critical patent/JPWO2010032796A1/ja
Publication of WO2010032796A1 publication Critical patent/WO2010032796A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H10P76/204—

Definitions

  • the present invention relates to a composition used for a lithography process in a manufacturing process of a semiconductor device and forming a sidewall in contact with a photoresist pattern.
  • a short-wavelength light such as an ArF excimer laser (wavelength of about 193 nm) is adopted as a light source for exposure to form a photoresist pattern.
  • a so-called sidewall method is known. It is known that the sidewall is formed using a silicon oxide film or the like formed by a CVD apparatus, but a film formed by applying a solution instead of the film formed by the CVD apparatus. Can also be used.
  • Patent Document 1 to Patent Document 4 a sidewall having a predetermined width is formed on the side surface of a photoresist pattern, and then the photoresist pattern is removed to thereby form a fine pattern formed on the sidewall.
  • a forming method has been proposed.
  • the sidewalls described in these conventional documents are formed by applying a composition containing a silicon-containing polymer and an organic solvent on a photoresist pattern to form a silicon-containing polymer layer, and then exposing and baking the photoresist.
  • the silicon-containing polymer has an epoxy group as a crosslinkable functional group
  • examples of the silicon-containing polymer include polysiloxane compounds or polysilsesquioxane compounds.
  • a specific structural unit of the polysiloxane compound or the polysilsesquioxane-based compound is not specified or suggested, and further, the polysiloxane compound or the polysilsesquioxane-based compound is used. Since the compound always contains an oxygen atom in addition to a silicon atom in the main chain, when the polysiloxane compound or the polysilsesquioxane compound has an epoxy group, it is further disadvantageous for increasing the silicon content in the silicon-containing polymer.
  • An object of the present invention is to provide a composition for forming a sidewall which can remarkably improve the coating property with respect to a substrate on which is formed, and the coating property with respect to the photoresist pattern, and has little intermixing with the photoresist pattern.
  • composition for forming a sidewall which is in contact with the surface of the resist underlayer film and the side surface of the photoresist pattern without a gap, has a low dry etching rate with respect to an oxygen-based gas, and has a high dry etching rate with respect to a fluorine-based gas. Is to provide a sidewall.
  • the first aspect of the present invention is: A silicon-containing polymer, and a solvent containing a predetermined organic solvent as a main component,
  • the silicon-containing polymer has a silanol group at its terminal, and the following formula (1a) and formula (1b):
  • R 3 represents a methyl group, an ethyl group or a phenyl group.
  • a composition for forming a sidewall for lithography having a structural unit represented by:
  • the above formula (1a) represents a structural unit in which one organic group and three oxygen atoms are bonded to one silicon atom.
  • the above formula (1b) represents a structural unit in which four oxygen atoms are bonded to one silicon atom.
  • a tetrafunctional silane compound typified by tetraethoxysilane is not used as a raw material monomer, it does not have a structural unit represented by the above formula (1b).
  • the silicon-containing polymer described in this specification is not limited to a polymer, and includes an oligomer. Therefore, the silicon-containing polymer may be either a polymer or an oligomer.
  • the second aspect of the present invention is: A silicon-containing polymer, and a solvent containing a predetermined organic solvent as a main component,
  • the silicon-containing polymer has a silanol group or the silanol group and a hydrogen atom at the terminal, and the following formula (2) and / or the following formula (3):
  • each R 2 independently represents a methyl group, an ethyl group or a phenyl group
  • R 1 represents a hydrogen atom, a methyl group, an ethyl group, an OH group or a phenyl group.
  • a composition for forming a sidewall for lithography having at least one structural unit represented by
  • the composition for forming a sidewall according to the present invention is excellent in applicability to a substrate on which a photoresist pattern is formed and coverage with respect to the photoresist pattern. Therefore, the composition for forming a sidewall according to the present invention can be easily coated with a photoresist pattern by spin coating. Further, the sidewall formed from the sidewall forming composition according to the present invention is excellent in dry etching characteristics with respect to fluorine-based gas and oxygen-based gas. Furthermore, the composition for forming a sidewall according to the present invention can form a desired sidewall even if the silicon-containing polymer does not have an epoxy group as a functional group capable of crosslinking. Moreover, the baking temperature necessary for forming the sidewall may be a relatively low temperature condition that does not exceed 150 ° C.
  • FIG. 1 is a schematic diagram showing a sidewall forming process.
  • FIG. 2 is a schematic diagram showing a sidewall forming step.
  • Polysilane is a polymer or oligomer whose main chain is composed of Si—Si bonds. Specific examples of the structural unit are shown below. However, the structural unit of polysilane is not limited to these examples.
  • each of R 2 in the above formula (2) or (3) is preferably independently a methyl group or an ethyl group, and R 1 in the above formula (2) is preferably a hydrogen atom or methyl. Group or ethyl group is preferred.
  • the main chain of the polysilane may be either linear or branched.
  • the solvent mainly composed of the organic solvent contained in the composition for forming a sidewall according to the present invention contains the organic solvent in a proportion of more than 50% by mass, for example, 60% by mass to 100% by mass.
  • organic solvents examples include 4-methyl-2-pentanol, 1-butanol, propylene glycol n-propyl ether, propylene glycol n-butyl ether, propylene glycol phenyl ether, dipropylene glycol n-propyl ether, Examples include propylene glycol n-butyl ether, dipropylene glycol dimethyl ether, tripropylene glycol methyl ether, propylene glycol diacetate, cyclohexanol acetate, and cyclohexanol.
  • An optimal organic solvent may be selected from the organic solvents according to the type of organic photoresist used to form the photoresist pattern.
  • examples of the organic solvent include 4-methyl-2-pentanol, propylene glycol n-butyl ether, propylene glycol phenyl ether.
  • Dipropylene glycol n-propyl ether, dipropylene glycol n-butyl ether, tripropylene glycol methyl ether, and cyclohexanol are preferred.
  • auxiliary components of the solvent include, for example, dipropylene glycol methyl ether, tripropylene glycol n-butyl ether, dipropylene glycol methyl ether acetate, 1,3-butylene glycol diacetate, methyl acetate, ethyl acetate, isopropyl acetate, n -Propyl alcohol, n-propyl acetate, butyl acetate, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, 3 -Methoxy Pentanol, 3-methoxybutyl acetate, 1,3-butylene glycol, triacetin, ethylene glycol monomethyl ether acetate, ethylene
  • the solvent needs to have little intermixing with the photoresist pattern and has good coating properties on the substrate on which the photoresist pattern is formed.
  • An organic solvent having a boiling point of 100 ° C. or less at 1 atm (101.3 kPa) is apt to volatilize during application, and water has a high surface tension and is difficult to apply uniformly. The applicability is not good. However, it is allowed to contain an organic solvent having a boiling point of 100 ° C. or lower as a subcomponent of the solvent.
  • the silicon-containing polymer contained in the composition for forming a sidewall according to the present invention has a silanol group at its end.
  • the presence of a silanol group can be estimated by analyzing the composition using an FT-NIR (Fourier transform near infrared) spectrometer.
  • a surfactant may be further added.
  • the surfactant can further improve the applicability of the coating composition to the substrate.
  • a nonionic surfactant or a fluorosurfactant is used.
  • the sidewall forming composition according to the present invention may further contain an organic acid.
  • the organic acid contributes to improving the storage stability of the composition for forming a sidewall according to the present invention.
  • organic acids include maleic acid, cis-5-norbornene-endo-2,3-dicarboxylic acid, cis-5-norbornene-exo-2,3-dicarboxylic acid, and cis-1,2-cyclohexane.
  • examples thereof include cis-type dicarboxylic acids such as dicarboxylic acids.
  • the ratio of the solid content to the composition is, for example, 1% by mass to 30% by mass.
  • the ratio of the organic acid to the solid content can be, for example, 0.1% by mass to 10% by mass.
  • the ratio of the surfactant to the solid content can be, for example, 0.01% by mass to 2% by mass.
  • the composition for forming a sidewall according to the present invention is applied so as to cover a photoresist pattern formed on a semiconductor substrate, and the photoresist pattern is formed using an organic photoresist.
  • This organic photoresist is either a positive resist or a negative resist, and contains a photoacid generator.
  • a chemically amplified resist that is sensitive to KrF excimer laser, ArF excimer laser, EUV (extreme ultraviolet) can be used.
  • “organic photoresist” is defined as not including a silicon-containing resist based on polysiloxane, polysilane, or the like.
  • the photoresist pattern is preferably formed on the semiconductor substrate via a resist underlayer film in which one layer or two or more layers are laminated.
  • the semiconductor substrate is typically a silicon wafer, but an SOI (Silicon on Insulator) substrate or a compound semiconductor wafer such as gallium arsenide (GaAs), indium phosphide (InP), or gallium phosphide (GaP) is used. May be.
  • An insulating film such as a silicon oxide film, a nitrogen-containing silicon oxide film (SiON film), a carbon-containing silicon oxide film (SiOC film), or a fluorine-containing silicon oxide film (SiOF film) or a low-k film (low dielectric constant film)
  • SiON film nitrogen-containing silicon oxide film
  • SiOC film carbon-containing silicon oxide film
  • SiOF film fluorine-containing silicon oxide film
  • low-k film low dielectric constant film
  • the average molecular weight of the polymer shown in the following synthesis examples of the present specification is a measurement result by gel permeation chromatography (hereinafter abbreviated as GPC).
  • GPC device HLC-8220GPC (manufactured by Tosoh Corporation)
  • GPC column Shodex (registered trademark) KF803L, KF802, KF801 (manufactured by Showa Denko KK) Column temperature: 40 ° C
  • Solvent tetrahydrofuran (THF)
  • Flow rate 1.0 ml / min Standard sample: Polystyrene (manufactured by Showa Denko KK)
  • the average molecular weight of the obtained polymer or oligomer by GPC was a weight average molecular weight of 4500 in terms of standard polystyrene.
  • the average molecular weight of the obtained polymer or oligomer by GPC was a weight average molecular weight of 1400 in terms of standard polystyrene.
  • the average molecular weight of the obtained polymer or oligomer by GPC was a weight average molecular weight of 2100 in terms of standard polystyrene.
  • Example 1 4-Methyl-2-pentanol was added to 25 g of the solution obtained in Synthesis Example 1 to obtain a 4.0 mass% solution. And it filtered using the polyethylene micro filter with the hole diameter of 0.02 micrometer, and prepared the composition (solution) for sidewall formation.
  • Example 2 To 25 g of the solution obtained in Synthesis Example 1, 0.10 g of maleic acid and 0.02 g of a surfactant (manufactured by DIC Corporation, trade name: Megafac R-30) were added, and 4-methyl-2- Pentanol was added to make a 4.0 mass% solution. And it filtered using the polyethylene micro filter with the hole diameter of 0.02 micrometer, and prepared the composition (solution) for sidewall formation.
  • a surfactant manufactured by DIC Corporation, trade name: Megafac R-30
  • Example 3> The polysilane compound represented by the above formula (16) (wherein R represents a hydrogen atom, a methyl group, an ethyl group, an OH group, or a phenyl group, and X represents an OH group, an OH group, and a hydrogen atom each independently) (Osaka Gas Chemical Co., Ltd., weight average molecular weight 5900, number average molecular weight 1800, structural unit A and structural unit B are contained in proportions of 33 mol% and 64 mol%, respectively, and at least a silanol group is present at the terminal. Prepared).
  • 4-methyl-2-pentanol was further added to 165.0 g of a 4-methyl-2-pentanol solution containing this polysilane compound at a concentration of 20% by mass to obtain a 4.0% by mass solution. And it filtered using the polyethylene micro filter with the hole diameter of 0.02 micrometer, and prepared the composition (solution) for sidewall formation.
  • the polysilane compound used includes a branched structure represented by the above formula (3) described in the present specification. Even in the polysilane compounds used in Examples 4 to 8 described below, it is not hindered to contain a branched structure as in this Example.
  • Example 4 The polysilane compound represented by the above formula (17) (wherein R represents a hydrogen atom, a methyl group, an ethyl group, an OH group or a phenyl group, and X represents an OH group, an OH group and a hydrogen atom, respectively).
  • R represents a hydrogen atom, a methyl group, an ethyl group, an OH group or a phenyl group
  • X represents an OH group, an OH group and a hydrogen atom, respectively.
  • 4-methyl-2-pentanol was further added to 165.0 g of a 4-methyl-2-pentanol solution containing this polysilane compound at a concentration of 20% by mass to obtain a 4.0% by mass solution.
  • it filtered using the polyethylene micro filter with the hole diameter of 0.02 micrometer, and prepared the composition (solution) for sidewall formation.
  • Example 5 The polysilane compound represented by the above formula (16) (wherein R represents a hydrogen atom, a methyl group, an ethyl group, an OH group, or a phenyl group, and X represents an OH group, an OH group, and a hydrogen atom each independently) (Osaka Gas Chemical Co., Ltd., weight average molecular weight 7200, number average molecular weight 1800, structural unit A and structural unit B are contained in proportions of 20 mol% and 80 mol% different from Example 3, respectively)
  • the terminal has at least a silanol group).
  • 4-methyl-2-pentanol was further added to 165.0 g of a 4-methyl-2-pentanol solution containing this polysilane compound at a concentration of 20% by mass to obtain a 4.0% by mass solution. And it filtered using the polyethylene micro filter with the hole diameter of 0.02 micrometer, and prepared the composition (solution) for sidewall formation.
  • Example 6> The polysilane compound represented by the above formula (18) (wherein R represents a hydrogen atom, a methyl group, an ethyl group, an OH group, or a phenyl group, and X represents an OH group, an OH group, and a hydrogen atom each independently) (Made by Osaka Gas Chemical Co., Ltd., weight average molecular weight 14000, number average molecular weight 2000, structural unit A, structural unit B and structural unit C in proportions of 35 mol%, 60 mol% and 5 mol%, respectively) And having at least a silanol group at the terminal).
  • R represents a hydrogen atom, a methyl group, an ethyl group, an OH group, or a phenyl group
  • X represents an OH group, an OH group, and a hydrogen atom each independently
  • 4-methyl-2-pentanol was further added to 165.0 g of a 4-methyl-2-pentanol solution containing this polysilane compound at a concentration of 20% by mass to obtain a 4.0% by mass solution. And it filtered using the polyethylene micro filter with the hole diameter of 0.02 micrometer, and prepared the composition (solution) for sidewall formation.
  • Example 7 The polysilane compound represented by the above formula (18) (wherein R represents a hydrogen atom, a methyl group, an ethyl group, an OH group, or a phenyl group, and X represents an OH group, an OH group, and a hydrogen atom each independently) (Made by Osaka Gas Chemical Co., Ltd., weight average molecular weight 5500, number average molecular weight 1500, structural unit A, structural unit B and structural unit C are 15 mol%, 80 mol%, 5 And at least a silanol group at the terminal).
  • R represents a hydrogen atom, a methyl group, an ethyl group, an OH group, or a phenyl group
  • X represents an OH group, an OH group, and a hydrogen atom each independently
  • 4-methyl-2-pentanol was further added to 165.0 g of a 4-methyl-2-pentanol solution containing this polysilane compound at a concentration of 20% by mass to obtain a 4.0% by mass solution. And it filtered using the polyethylene micro filter with the hole diameter of 0.02 micrometer, and prepared the composition (solution) for sidewall formation.
  • Example 8> The polysilane compound represented by the above formula (18) (wherein R represents a hydrogen atom, a methyl group, an ethyl group, an OH group, or a phenyl group, and X represents an OH group, an OH group, and a hydrogen atom each independently) (Made by Osaka Gas Chemical Co., Ltd., weight average molecular weight 5500, number average molecular weight 1500, structural unit A, structural unit B, and structural unit C are 15 mol%, 75 different from Example 6 and Example 7, respectively. And at least a silanol group at the terminal).
  • 4-methyl-2-pentanol was further added to 165.0 g of a 4-methyl-2-pentanol solution containing this polysilane compound at a concentration of 20% by mass to obtain a 4.0% by mass solution. And it filtered using the polyethylene micro filter with the hole diameter of 0.02 micrometer, and prepared the composition (solution) for sidewall formation.
  • the composition for forming a sidewall prepared in Example 1 is spin-coated (1500 rpm, 60 seconds) so as to cover the photoresist pattern 103, and a coating layer 104 is formed as shown in FIG. did. At this time, baking was not performed. Then, as shown in FIG. 1C, the entire surface of the coating layer 104 was exposed to UV irradiation.
  • An ArF excimer laser may be used as a light source used for this exposure.
  • the irradiation energy such as UV is in the range of 10 mJ / cm 2 to 100 mJ / cm 2 , and the irradiation time is, for example, 2 to 60 seconds.
  • the sidewall 105 was formed around the photoresist pattern by baking at 150 ° C. for 60 seconds.
  • the baking temperature is in the range of 80 ° C. to 200 ° C., preferably 80 ° C. to 150 ° C., and needs to be set so that the photoresist pattern 103 is softened and does not reflow.
  • the heating means used for baking is not particularly limited. For example, a hot plate can be used.
  • the coating layer 104 on which the sidewall 105 was not formed was removed using 4-methyl-2-pentanol.
  • 4-methyl-2-pentanol If only the coating layer 104 can be selectively removed, other than 4-methyl-2-pentanol may be used, but propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), PGMEA and PGME are in a ratio of 3: 7. Solvents mixed in proportion and tetramethylammonium hydroxide (TMAH) aqueous solution cannot be used. The state after removal is shown in FIG. Then, residual 4-methyl-2-pentanol was removed by spin drying (3000 rpm, 30 seconds).
  • TMAH tetramethylammonium hydroxide
  • etching gas As an etching gas and performing dry etching on the sidewall 105, the upper portion of the photoresist pattern 103 was exposed as shown in FIG.
  • RIE-10NR manufactured by Samco Co., Ltd.
  • etching was performed to remove the photoresist pattern 103 using O 2 as an etching gas, and the sidewall 105 was left as shown in FIG.
  • RIE-10NR manufactured by Samco Co., Ltd.
  • the portion of the resist underlayer film 102 where the sidewall 105 is not formed may be etched.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)

Abstract

La présente invention porte sur une composition permettant de former une paroi latérale qui convient pour former une paroi latérale en contact avec un motif en résine photosensible. De façon spécifique, la présente invention porte sur une composition permettant de former une paroi latérale destinée à la lithographie et contenant un polymère contenant du silicium, ayant un groupe silanol au niveau d'une extrémité tout en contenant des unités structurelles représentées par la formule (1a) et la formule (1b) (dans lesquelles R3 représente un groupe organique) et un solvant composé principalement d'un solvant organique spécifique. De même, de façon spécifique, la présente invention porte sur une composition permettant de former une paroi latérale destinée à la lithographie et contenant un polymère contenant du silicium, ayant un groupe silanol ou, en variante, un groupe silanol et un atome d'hydrogène au niveau d'une extrémité tout en contenant au moins une unité structurelle représentée par la formule (2) et/ou la formule (3) (dans lesquelles R2 et R1 représentent chacun un groupe organique), et un solvant composé principalement d'un solvant organique spécifique.
PCT/JP2009/066277 2008-09-19 2009-09-17 Composition permettant de former une paroi latérale Ceased WO2010032796A1 (fr)

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Cited By (10)

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JP2010169894A (ja) * 2009-01-22 2010-08-05 Tokyo Ohka Kogyo Co Ltd 被覆パターン形成方法、レジスト被覆膜形成用材料、パターン形成方法
JP2010256626A (ja) * 2009-04-24 2010-11-11 Shin-Etsu Chemical Co Ltd パターン形成方法
JP2012252083A (ja) * 2011-06-01 2012-12-20 Az Electronic Materials Ip Ltd 微細パターンマスクおよびその製造方法、ならびにそれを用いた微細パターンの形成方法
JP2012533907A (ja) * 2009-07-23 2012-12-27 ダウ コーニング コーポレーション ダブルパターニング方法及び材料
JP2013536463A (ja) * 2010-07-28 2013-09-19 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション フォトレジストパターン上にコーティングするための組成物
JP2014071408A (ja) * 2012-10-01 2014-04-21 Shin Etsu Chem Co Ltd パターン形成方法
JP2014178711A (ja) * 2014-06-16 2014-09-25 Tokyo Ohka Kogyo Co Ltd レジスト被覆膜形成用材料
JP2016071345A (ja) * 2014-09-26 2016-05-09 東京応化工業株式会社 レジストパターン形成方法、レジストパターンスプリット剤、スプリットパターン改善化剤及びレジストパターンスプリット材料
WO2018043305A1 (fr) * 2016-09-01 2018-03-08 Jsr株式会社 Procédé et composition de modification sélective de surface de matériau de base
JP2019049747A (ja) * 2014-07-08 2019-03-28 東京エレクトロン株式会社 ネガティブトーン現像剤相溶性フォトレジスト組成物及び使用方法

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WO2009096371A1 (fr) * 2008-01-28 2009-08-06 Az Electronic Materials (Japan) K.K. Masque à motif fin, son procédé de fabrication et procédé de formation d'un motif fin à l'aide du masque

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JP2008072101A (ja) * 2006-09-12 2008-03-27 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法
JP2008287176A (ja) * 2007-05-21 2008-11-27 Jsr Corp パターン反転用樹脂組成物及び反転パターン形成方法
WO2009096371A1 (fr) * 2008-01-28 2009-08-06 Az Electronic Materials (Japan) K.K. Masque à motif fin, son procédé de fabrication et procédé de formation d'un motif fin à l'aide du masque

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010169894A (ja) * 2009-01-22 2010-08-05 Tokyo Ohka Kogyo Co Ltd 被覆パターン形成方法、レジスト被覆膜形成用材料、パターン形成方法
JP2010256626A (ja) * 2009-04-24 2010-11-11 Shin-Etsu Chemical Co Ltd パターン形成方法
JP2012533907A (ja) * 2009-07-23 2012-12-27 ダウ コーニング コーポレーション ダブルパターニング方法及び材料
JP2013536463A (ja) * 2010-07-28 2013-09-19 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション フォトレジストパターン上にコーティングするための組成物
JP2012252083A (ja) * 2011-06-01 2012-12-20 Az Electronic Materials Ip Ltd 微細パターンマスクおよびその製造方法、ならびにそれを用いた微細パターンの形成方法
JP2014071408A (ja) * 2012-10-01 2014-04-21 Shin Etsu Chem Co Ltd パターン形成方法
JP2014178711A (ja) * 2014-06-16 2014-09-25 Tokyo Ohka Kogyo Co Ltd レジスト被覆膜形成用材料
JP2019049747A (ja) * 2014-07-08 2019-03-28 東京エレクトロン株式会社 ネガティブトーン現像剤相溶性フォトレジスト組成物及び使用方法
JP2016071345A (ja) * 2014-09-26 2016-05-09 東京応化工業株式会社 レジストパターン形成方法、レジストパターンスプリット剤、スプリットパターン改善化剤及びレジストパターンスプリット材料
WO2018043305A1 (fr) * 2016-09-01 2018-03-08 Jsr株式会社 Procédé et composition de modification sélective de surface de matériau de base
JPWO2018043305A1 (ja) * 2016-09-01 2019-06-24 Jsr株式会社 基材表面の選択的修飾方法及び組成物

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