201017046 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種陶瓷/金屬複合結構，尤其關於 利用一種銅薄片’氧化鋁基板，銅塊結合的複合結構。 【先前技術】 參 電子零件在電子流動的情況下，皆會產生熱，而 熱的產生會提升電阻’阻礙電子的流動，繼而大幅影 響電子零件的功能。在電子零件製造技術大幅提升的 現況I ’電子零件中的線寬越來越小，線路密度卻越 來越1 ’因而使得電子零件所產生的熱也快速增加。 以電庵之中央處理器（Central Processing Unit，CPU) 為例’ Intel公司最早版本的pentium只需搭配散埶 率16W的封裝即可。但是，在2004年所生產的中央 處理器的發熱量已達84w，2〇〇6年所生產的中央處理 器的發熱量更已達98W，若熱不能快速被帶走，則電 腦之中央處理器的温度將快速增加，使電腦之中央處 再能運轉。因此，與電腦之中央處理器接^的 、裝疋否具有快速的散熱能力，是主導電腦能 運轉的關鍵因素。 $霄 一般功率元件，也是類似於電腦之中央處理器， 運作過程中產生高熱。因此，功率元件亦需盥 其接觸的封裝將熱快速散去，方能正常運轉。 /、 再以發光二極體（Light Emitting Diode，LED)為 ί，，ί?顏色的發光二極體在近幾年陸續被開發ΐ 士以白光發光二極體的開發成功最為重要。 此乃因為白光發光二極體可作為照明燈具的 種光源的路燈用電量比水銀燈少75%，比 ^ ^ 桃，故具有低耗能的優勢，為節約能源的一& 201017046 發展。然而大功率的白光發光二極體也會放出高熱， 但LED照明的最大問題在於LED不耐高熱一般來說 „ ，度不能超過120°C，若超過此溫度，則發光二極體的 • 降，甚至失效，故與接觸的散熱機 ，的快速散熱能力是發光二極體能應用的最大挑戰， 這也說明了散熱模組的開發對發光二極體於照明方 的應用’具有舉足輕重的關鍵地位。 ，同時兼顧現今3C電子產品輕薄短小的設計要 二極‘以電腦之中央處理器、功率元件或發光 丨:極體70件接觸的基板須同時符合以下三個基本要 熟方面的要求：此材料須具有很好的散熱 力，以達快速散熱的要求。 』双热月b 2.絕緣方面的要求彳為避免高功率電子零短 路，此材料須同時具有高電阻。 在封3裝Π吏】Ϊ可靠度··這是因高功率電子零件 高功率電子零件接觸的二 降▲數萬:人’長時間使用後的可靠度是極重要 的要這與陶究與金屬鍵結強度有絕對關係。 鰭片及熱管等機構，再輔以風扇，以 率的電子零件所產生的熱快谏 七沔力 的形狀f雜，了其與電子ϊίΐί:: 散熱Ξ片及：基板與電子零件接合，再與 電子零件接合、的管以若熱仏 又，目前各種陶兗基：=有ϋ為=瓶頸/ 易與其他散熱機構，如散熱鰭 二^右，且不 接0在_，故這種基板雖具有快速將 4 201017046 熱分散至整塊基板的能力，但仍須將熱導至其他具大 面積的散熱機構接合，方可達成散熱的目的。而且一 個材料所能帶走之熱量不僅與熱傳導係數有關，也與 ，材料的質量成正比’基板的散熱係數雖高，但質量 卻輕’故只有分散熱量的功能，仍須與其他散熱機構， 如’散熱鰭片及熱管或均熱板（vap0r chamber)等，接 合在一起，才能達成散熱的目的。 ^ ^但須注意的是’所有電子零件皆須能在開關數千 次後，仍能正常使用，但電子零件每在開關一次，即 快速y降溫一次，若熱不能快速帶走，這將對電子零 命極其不利，目前產業界雖大量使用焊錫的方 電子零件與其他金屬基板焊接在一起，但金屬錫 乂屬，如銅或铭，在焊接時會反應生成金屬間 二 因金屬間介化合物 時=脆St往往在承受外加應力’或熱應力 結構因I’ ^ 千合f板/其他散熱機構的 貫為本案所欲解決之問題。 【發明内容】 以結槿種Ϊ熱模塊結構，藉 絕緣功能。 /、他散熱機構，提供良好的散熱及 構，ίϊ念述提供一種陶莞/金屬複合結 一位於該薄金屬屉盒層，一厚金屬塊下層，以及 其中該厚金屬塊下層屬塊下層的陶瓷中間層， 的數值的十至ί千倍的範圍是該厚金屬塊下層的厚度 201017046 為了達到上述目的，本發明再提供一稀 $熱模塊結構，包括一第一金屬層；一第二金屬屬 ' f介於1至25毫米（millimeter)之間且大於該第」 金屬層的厚度；以及一絕緣結構，係位於該第二f ^與該第二金屬厚層之間並與該第二金屬i層有f201017046 VI. Description of the Invention: [Technical Field] The present invention relates to a ceramic/metal composite structure, and more particularly to a composite structure using a copper foil 'alumina substrate, a copper block bond. [Prior Art] When an electronic component flows in the presence of electrons, heat is generated, and the generation of heat increases the resistance of the electrons, which hinders the flow of electrons, which in turn greatly affects the function of the electronic components. In the current state of the art of electronic component manufacturing, the line width in the electronic parts is getting smaller and smaller, and the line density is getting higher and higher. Thus, the heat generated by the electronic parts is also rapidly increased. Take the Central Processing Unit (CPU) as an example. Intel's earliest version of the Pentium is only available with a 16W package. However, the central processor produced in 2004 has reached a heat output of 84W. The central processor produced in 2002 has a heat output of 98W. If the heat cannot be taken away quickly, the central processing of the computer The temperature of the unit will increase rapidly, allowing the center of the computer to operate again. Therefore, whether it is connected to the central processing unit of the computer and has a fast heat dissipation capability is a key factor that enables the computer to operate. $霄 The general power component, which is similar to the central processor of a computer, generates high heat during operation. Therefore, the power component also needs to be quickly dissipated by the package in contact with it in order to operate normally. /, Light Emitting Diode (LED) is a ί,, ί color LED has been developed in recent years. The development of white light emitting diodes is the most important. This is because the white light emitting diode can be used as a light source for lighting lamps. The street lamp uses 75% less electricity than the mercury lamp, and has a lower energy consumption advantage, which is a development of energy saving one & 201017046. However, high-power white light-emitting diodes also emit high heat, but the biggest problem with LED lighting is that the LED is not resistant to high heat, and the degree cannot exceed 120 °C. If it exceeds this temperature, the LED will drop. Even failing, so the rapid heat dissipation capability of the contact heat sink is the biggest challenge for the application of the light-emitting diode, which also shows that the development of the heat-dissipating module plays a pivotal role in the application of the light-emitting diode to the lighting side. At the same time, taking into account the current 3C electronic products, the light and short design is required to be two-poles. The central processing unit, power components or illuminating 电脑 of the computer: 70 substrates in contact with the polar body must meet the following three basic requirements: The material must have good heat dissipation for fast heat dissipation. 』Double heat month b 2. Insulation requirements 彳To avoid high-power electronic zero-short, this material must have high resistance at the same time. 】Reliability··This is due to the high-power electronic parts, high-power electronic parts contact the second drop ▲ tens of thousands: the reliability of people after long-term use is extremely important to this There is an absolute relationship between the strength of the metal bond and the fins and heat pipes, and the fan, the heat generated by the electronic parts of the rate, the shape of the heat, and the electronic ϊίΐί:: heat dissipation The film and the substrate are joined to the electronic component, and then the tube is joined with the electronic component. If the tube is hot, the current ceramic base is: = ϋ = = bottleneck / easy with other heat dissipation mechanisms, such as heat sink fins ^ right, and Although the substrate is not connected to 0, the substrate has the ability to quickly disperse 4 201017046 heat to the entire substrate, but it must be thermally coupled to other large-area heat dissipating mechanisms to achieve heat dissipation. The heat that the material can carry away is not only related to the heat transfer coefficient, but also proportional to the mass of the material. 'The heat dissipation coefficient of the substrate is high, but the quality is light'. Therefore, only the function of dispersing heat must be combined with other heat dissipation mechanisms, such as ' The heat sink fins and the heat pipe or the soaking plate (vap0r chamber) are joined together to achieve the purpose of heat dissipation. ^ ^But it should be noted that 'all electronic parts must be able to be used normally after thousands of switches. However, every time the electronic parts are switched once, that is, the temperature is quickly cooled by y. If the heat cannot be taken away quickly, this will be extremely unfavorable for the electronic zero life. At present, although the industrial use of soldering electronic components is welded with other metal substrates, However, metal tin bismuth, such as copper or Ming, will react during welding to form intermetallic intermetallic compounds. = brittle St tends to withstand applied stress or thermal stress structure due to I' ^ thousand y plate / other heat dissipation The problem of the organization is to solve the problem of the case. [Summary of the invention] The structure of the thermal module is combined with the insulation function. /, his heat dissipation mechanism provides good heat dissipation and structure, and provides a kind of pottery/metal The composite knot is located in the thin metal drawer layer, the lower layer of a thick metal block, and the ceramic intermediate layer in the lower layer of the lower layer of the thick metal block, and the value of the range of ten to ten thousand times is the thickness of the lower layer of the thick metal block 201017046 In order to achieve the above object, the present invention further provides a thin $ thermal module structure including a first metal layer; a second metal genus 'f is between 1 and 25 millimeters (millimeter) and The thickness of the first to the "metal layer; and an insulation structure, located in the second line and has ^ f f i and the second metal layer between the second thick metal layer
=值ί:至一該千接:面積的數值是該第二H 如上所述之掏瓷/金屬散熱模塊結構， 金屬薄層係為一銅片。 卉干該第一 ❹；i 所述之陶竟/金屬複合結構，其中該第一金屬 層上具有至少一線路或接點。 冲1屬 如上所述之散熱模塊結構，其中該第二金 係為一銅塊。 兔屬厚層 ，其中該絕緣結構 ，其中該絕緣結構 氮化紹、氮^化發、 如上所述之陶瓷/金屬複合結構 之一厚度介於0.1至3公釐之間。 如上所述之陶瓷/金屬複合結構 的材料係選自於由氧化鋁、氧化矽、乳1、氮价 碳化發、玻璃及玻璃陶瓷所組成的群組中的一種。 如上所述之陶瓷/金屬散熱模塊結構，其中該 〇 厚度與第二厚度的比例介於1/5至1/100之間。Λ 為了達到上述之目的，本發明提供一種陶f 散熱模塊結構之製造方法，包含以下步驟：提供一 瓷基板；將一第一金屬片置於該陶瓷基板層上·將一 第二金屬片置於該陶瓷基板層下；以及，加熱該陶 基板、該二金屬片，使該二金屬片與該陶瓷基 人 形成強鍵結，其中’該第二金屬片與該陶瓷基板之間 具有一接觸面積，而該接觸面積的數值是該第二2 片的厚度的數值的十倍至一千倍。 較佳者，其中該金屬片之一材料係選自於由金、 銀、銅以及其合金所組成的群組。 201017046 較佳者，其中該陶瓷基板係由氧化鋁或氮化銘 組成。 η 較佳者，其中該直接接合之處理係於9〇〇°c的溫产 以上進行以形成該強鍵結。 z里又 為讓本發明之上述内容能更明顯易懂，下文 較佳實施例’並配合所附圖式’作詳細說明如下。丨 【實施方式】 ❹ Φ 面干=顯據本發明第—實施例之散熱模塊之剖 薄層„ ΐί ’本實施例之散熱模塊包含-薄金ίΐί 一陶究基板14、一厚金屬下層15。 所址陶莞基板14係由氧化銘或氮化銘 、、土 ，、、、而’本發明並未受限於此，從以 ”Hi其他材料亦可用來形成陶究基i μ。 之I f陶究基板14上方。金屬上層13 ，。金，上，13之—厚度介於w金所=的 imllnneter)至！毫米 ^:^釐 毫米之間。金屈卜爲w u叶丨於〇.2毫米至〇.6 點（未顯示）。 上可具有一條或多條線路或接 了層15位於陶莞基 之一材料係選自於 r乃I屬下層15 群組。金屬下層15之銀、銅以及其合金所組成的 間，最佳是；：奈半:厚^於1毫米至25毫米之 HI 7 ί 毫未至10毫米之間。 熱模塊的之陶⑽之散 之陶瓷/金屬之散舞模地如圖2所示，本實施例 首先，、模塊的製仏方法包含以下步驟。 '' 於步驟S02，鮮夺麗 面處理。這虺表面泠^金屬上下層（13、15)執行表 -表面處理舉例而言，是將金屬層施以去 201017046 續'ii後^:以或：施以表面部份氧化處理， 覆於金屬層⑴、一15)或陶^基電板鑛=將一活性金屬披 仏：^屬=^金^^屬上層13、陶竞基板 14及金屬下；15接人U同時與陶瓷基板 么龎f· ® A滑15接口形成強鍵結。舉例而言，可以將 ^二強陶4基板14及金屬下層一= Φ Φ 製造下=施例之陶錄屬之散熱模塊的 驟SU，提供陶竞/金屬複合基板21。 ”芩；r/將對 屬ίm ΐ合m電鑛方式將-活性金 接著，於步驟SU，加熱陶瓷/金屬複合基板21及 ίί ιϋί〇〇°Γ上’使陶究/金屬複合基板21與 金屬下層15接合形成強鍵結。 本發明所揭示的陶瓷/金屬散熱模塊可同時提供 =速散熱的能力及絕緣方面的要求。為提升此散熱社 ^的界面強度及長1間的可靠度，不添加任何焊接^ 劑，如錫合金等，以高溫直接接合的方式製備，可製 士 f高界面強度的散熱模塊。依此精神所製作出的陶 瓷一金屬接合的模塊，皆可視為本發明之延伸。 陶瓷基板14位於厚金屬下層15上。陶瓷基板14 =一厚度介於0.1至1公釐之間。陶瓷基板14之一材 料係選自於由氧化鋁、氧化矽、氮化鋁、氮化矽、碳 化矽、玻璃及玻璃陶瓷所組成的群組。 薄金屬上層13位於陶瓷基板14上。金屬上下層 13或15之一材料係選自於由金、銀、銅以及其合金所 201017046 組成的群組。金屬上層的厚度為金屬下層厚度的1/5 至1/100之間’更佳是介於1/5至1/15之間。 此外，本發明亦可由厚度的數值對比面積的數值 來界定，而原來的單位則不論，舉例而言但不以此為 限，如厚金屬塊下層的厚度為10公釐，則厚金屬塊下 層與該陶竞基板的接觸面·積則可為但不限定為1 〇〇〇〇 =T公f，由此可見，單純的就厚金屬了層的厚度的 而s是10，而接觸面積的數值是1〇〇〇〇，故而兩 參 值ΐ 一千或一千分之一，亦即接觸面積的 數值疋金屬下層的厚度的數值的一千倍。 = d = = :故本發明原則上接觸面的 ，疋f厚度的數值的十倍，最高至一千倍。由此 以另外一個實施例但不以此為限，如厚金屬 的釐，則厚金屬塊下層與該陶莞基板 限定為_。平方公羞，此依舊 意圖m4’了其r厘示本發明另一種實施例的立體示 陶瓷A板14, 下層15遠大於金屬上層13與 Θ 積增加了，因此，除了透過；的表f 加強散埶效果外，介二=增加金屬下層15的厚度來 寬度，“而增加金屬過f向的增加金屬下層15的 是可以透過強制料冷m1的下方流動到其上方β或 以增強散熱效果。机、式強制流體穿過散熱孔15a 請參閱圖5,其顯示本發明 而 且在金屬下層15上銑有溝槽 9 201017046 .A。藉以增加金屬下層15的表面積，進以增進散熱 音圓6,其顯示本發明再一種實施例的立體示 “1Γ二揭露在陶竟基板14的上方有金屬上層13，= value ί: to a thousand connection: the value of the area is the second eh enamel/metal heat dissipation module structure as described above, and the thin metal layer is a copper piece. The ceramic/metal composite structure of the first metal layer, wherein the first metal layer has at least one line or contact. The rush 1 is a heat dissipation module structure as described above, wherein the second metal is a copper block. A thick layer of the genus, wherein the insulating structure, wherein the insulating structure is nitrided, nitrogenized, and one of the ceramic/metal composite structures as described above has a thickness of between 0.1 and 3 mm. The material of the ceramic/metal composite structure as described above is selected from the group consisting of alumina, cerium oxide, milk 1, nitrogen-valent carbonized hair, glass, and glass ceramic. The ceramic/metal heat dissipating module structure as described above, wherein the ratio of the thickness of the crucible to the second thickness is between 1/5 and 1/100. In order to achieve the above object, the present invention provides a method for fabricating a ceramic heat dissipation module structure, comprising the steps of: providing a porcelain substrate; placing a first metal sheet on the ceramic substrate layer; and placing a second metal sheet Under the ceramic substrate layer; and heating the ceramic substrate and the two metal sheets to form a strong bond between the two metal sheets and the ceramic base, wherein the second metal sheet has a contact with the ceramic substrate The area, and the value of the contact area is ten to one thousand times the value of the thickness of the second two sheets. Preferably, one of the materials of the metal sheet is selected from the group consisting of gold, silver, copper, and alloys thereof. 201017046 Preferably, wherein the ceramic substrate is composed of alumina or nitride. Preferably, η, wherein the direct bonding treatment is performed above a temperature of 9 ° C to form the strong bond. In order to make the above description of the present invention more apparent, the following preferred embodiments are described in detail below with reference to the accompanying drawings.实施 [Embodiment] Φ Φ surface drying = the thin layer of the heat dissipation module of the first embodiment of the present invention „ ΐί ' The heat dissipation module of the present embodiment includes - thin gold ΐ 一 a ceramic substrate 14 , a thick metal lower layer 15 The site of the pottery base plate 14 is made of Oxidation or Nitrogen, Earth, and, and the present invention is not limited thereto, and other materials can be used to form the ceramic base i μ. The I f is above the substrate 14. Metal upper layer 13, . Gold, on, 13 - thickness is between the gold and the imllnneter = to! Mm ^: ^ cm between the millimeters. Gold 屈b is w u 丨 丨 2. 2 mm to 〇. 6 points (not shown). One or more lines or layers 15 may be located on one of the ceramics. One of the materials is selected from the group 15 of the lower layer of the R. The composition of the metal underlayer 15 of silver, copper, and alloys thereof is optimal;: Nai: thickness ^ between 1 mm and 25 mm HI 7 ί to less than 10 mm. The ceramic/metal dispersion of the ceramic (10) of the thermal module is shown in Fig. 2. This embodiment First, the method of manufacturing the module includes the following steps. '' In step S02, freshly processed. This surface 泠 ^ metal upper and lower layers (13, 15) perform surface-surface treatment, for example, the metal layer is applied to 201017046 continued 'ii after ^: or: applied surface partial oxidation treatment, covering the metal Layer (1), a 15) or Taoji electric plate mine = an active metal clam: ^ genus = ^ gold ^ ^ is the upper layer 13, Tao Jing substrate 14 and metal; 15 connected U simultaneously with the ceramic substrate The f· ® A slide 15 interface forms a strong bond. For example, it is possible to provide a ceramic/metal composite substrate 21 by using a second SU 14 and a lower metal layer = Φ Φ to produce a heat sink module of the ceramics of the embodiment.芩;r/ will be ί ί ί m 电 电 电 电 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性 活性The metal underlayer 15 is bonded to form a strong bond. The ceramic/metal heat dissipating module disclosed by the present invention can simultaneously provide the capability of heat dissipation and insulation requirements. To improve the interface strength and reliability of the heat dissipation system, The ceramic-metal joint module produced by the spirit of the present invention can be regarded as the invention without any soldering agent, such as tin alloy, which is prepared by direct bonding at a high temperature. The ceramic substrate 14 is located on the thick metal underlayer 15. The ceramic substrate 14 = a thickness of between 0.1 and 1 mm. One of the ceramic substrates 14 is selected from the group consisting of alumina, yttria, aluminum nitride, a group consisting of tantalum nitride, tantalum carbide, glass and glass ceramics. The thin metal upper layer 13 is located on the ceramic substrate 14. One of the metal upper and lower layers 13 or 15 is selected from the group consisting of gold, silver, copper and alloys thereof. 201017046 Composition The thickness of the upper layer of the metal is between 1/5 and 1/100 of the thickness of the lower layer of the metal. More preferably, it is between 1/5 and 1/15. Further, the present invention can also compare the value of the area by the value of the thickness. To define, but the original unit is, for example, but not limited to this. For example, if the thickness of the lower layer of the thick metal block is 10 mm, the contact surface of the lower layer of the thick metal block and the ceramic substrate may be However, it is not limited to 1 〇〇〇〇=T male f, and thus it can be seen that the thickness of the layer is s is 10 and the contact area is 1 〇〇〇〇, so the two values ΐ One thousand or one thousandth, that is, the value of the contact area is one thousand times the value of the thickness of the lower layer of the metal. = d = = : Therefore, in principle, the present invention is ten times the value of the thickness of the contact surface. Up to a thousand times. Therefore, in another embodiment, but not limited thereto, such as thick metal PCT, the lower layer of the thick metal block and the pottery substrate are defined as _. Square shy, this is still intended m4' R is a perspective view of a ceramic A plate 14 according to another embodiment of the present invention. The lower layer 15 is much larger than the upper metal layer 13 and the crucible. The product is increased. Therefore, in addition to the transparency of the table f, the second effect is to increase the thickness of the metal lower layer 15 to the width. "When the metal is added to the f-direction, the metal lower layer 15 can pass through the forced cold m1. The bottom of the flow flows to the top of it to enhance the heat dissipation effect. Machine-type forced fluid passes through the louver 15a. Referring to Figure 5, the present invention is shown and a groove 9 201017046.A is milled on the lower metal layer 15. The surface area of the metal underlayer 15 is increased to enhance the heat-dissipating sound circle 6, which shows a stereoscopic display of a further embodiment of the present invention. "A second embodiment of the present invention discloses a metal upper layer 13 above the ceramic substrate 14.
Si Hif下層15,且各層均同為-不規則的五 一、知疋因為金屬上層13所配合的電路（圖中未揭 =)’有時候形狀亦不規則，因此金屬上層13亦需配 〇j而使得陶瓷基板14與金屬下層15亦需配合。 m :^閱圖7，其顯示本發明再一種實施例的側視Si Hif lower layer 15, and each layer is the same - irregular 51, knowing that because the metal upper layer 13 is matched with the circuit (not shown in the figure), sometimes the shape is also irregular, so the metal upper layer 13 also needs to be matched. Therefore, the ceramic substrate 14 and the metal underlayer 15 also need to be matched. m : ^ see Figure 7, which shows a side view of still another embodiment of the present invention
=二其中揭露在陶瓷基板14的上方有金屬上層13，而 ^方則有金屬下層15。又，金屬下層15内開設有流道 15c，〜道15c通常是平行於金屬下層15的平面或是 f其層向而成形的，以供流體通過，如氣體或是液體 k經流道15c時，即會將金屬下層15的熱帶走，從而 達到了散熱的目的。而這樣的方式，也只有本發明的 具有相當厚度的金屬下層15才有足夠的空間來形成流 道 15c。 請參閱圖8,其顯示本發明別種實施例的立體示意 圖。圖8揭露在陶瓷基板14的上方有金屬上層13，而 下方則有金屬下層15 ’此外，金屬上層13是被分隔成 數個獨立的區域，而金屬下層15則大致上是呈一塊狀 物體。金屬上層13被分隔為數個獨立的區域在於各個 區域之間不可以有電連接*因此需要隔離開來，而即 使是在此情況之下’本發明的結構依然適用。 綜上所述，本發明揭露一種結合金屬及陶瓷的散 熱模塊結構’此模塊同時提供散熱及絕緣的基本要 求。若以銅為例，因銅的電阻係數極低，只有， 故可以蝕刻方式在銅的部分做出各種線路或接點。藉 由此線路或接點，此複合結構可與高功率電子零件整 合及封裝，達成良好的電連接及散熱的功能。此外， 201017046 以高溫直接接合的製程方式來 屬及陶瓷的界面沒有脆性的合金：模：且：苎 ，以方便說明本發明之技術内容,.，而非= 例，在不超出本發明之精神及以 情況’所做之種種變化實施，皆屬 【圖式簡單說明】 圖1顯示依據本發明實施例之陶瓷/金屬熱模塊結構 之刮面示意圖； 圖2顯示依據本發明實施例之陶瓷/金屬散熱模塊結 構之製法之流程圖； 圖3顯示依據本發明實施例之陶瓷/金屬散熱模塊結 構之製法之流程圖； 圖4顯示本發明另一種實施例的立體示意圖； 圖5顯示本發明又一種實施例的立體示意圖； 圖6顯示本發明再一種實施例的立體示意圖； 圖7顯示本發明他種實施例的側視圖；以及 圖8顯示本發明別種實施例的立體示意圖。 S11-S13 :步驟 14 :陶瓷基板 15a :散熱孔 15c :流道 【主要元件符號說明】 S01-S03 :步驟 13 :上金屬層 15 :下金屬塊 15b :溝槽In the second, it is revealed that there is a metal upper layer 13 above the ceramic substrate 14, and a metal lower layer 15 is formed on the side of the ceramic substrate 14. Further, a flow channel 15c is formed in the lower metal layer 15, and the channel 15c is generally formed parallel to the plane of the metal lower layer 15 or f-layer thereof for fluid passage, such as gas or liquid k through the flow channel 15c. The metal of the lower layer 15 of the metal is removed, thereby achieving the purpose of heat dissipation. In such a manner, only the metal underlayer 15 having a considerable thickness of the present invention has sufficient space to form the flow path 15c. Referring to Figure 8, there is shown a perspective view of another embodiment of the present invention. Fig. 8 discloses that there is a metal upper layer 13 above the ceramic substrate 14, and a metal lower layer 15' below. Further, the metal upper layer 13 is divided into a plurality of independent regions, and the metal lower layer 15 is substantially a block-shaped object. The upper metal layer 13 is divided into a plurality of separate regions in that there is no electrical connection between the respective regions* and therefore isolation is required, and even in this case, the structure of the present invention is still applicable. In summary, the present invention discloses a heat dissipating module structure incorporating metal and ceramics. This module simultaneously provides basic requirements for heat dissipation and insulation. If copper is taken as an example, since the resistivity of copper is extremely low, only a variety of lines or contacts can be made in the copper portion by etching. With this line or contact, the composite structure can be integrated and packaged with high-power electronic components for good electrical connection and heat dissipation. In addition, 201017046 is a high-temperature direct bonding process and the interface between the ceramic and the ceramic is not brittle: mold: and: 苎, to facilitate the description of the technical content of the present invention, rather than =, in the spirit of the present invention And the various changes made in the case of the 'simplified description of the drawings. FIG. 1 is a schematic view showing the shaving of a ceramic/metal thermal module structure according to an embodiment of the present invention; FIG. 2 shows a ceramic according to an embodiment of the present invention. FIG. 3 is a flow chart showing a method for fabricating a ceramic/metal heat dissipating module structure according to an embodiment of the present invention; FIG. 4 is a perspective view showing another embodiment of the present invention; FIG. 6 is a perspective view showing another embodiment of the present invention; FIG. 7 is a side view showing another embodiment of the present invention; and FIG. 8 is a perspective view showing another embodiment of the present invention. S11-S13 : Step 14 : Ceramic substrate 15a : Cooling hole 15c : Flow path [Main component symbol description ] S01-S03 : Step 13 : Upper metal layer 15 : Lower metal block 15b : Groove