CN201149866Y - Ceramic/Metal Composite Structure - Google Patents
Ceramic/Metal Composite Structure Download PDFInfo
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- CN201149866Y CN201149866Y CN200720194637.4U CN200720194637U CN201149866Y CN 201149866 Y CN201149866 Y CN 201149866Y CN 200720194637 U CN200720194637 U CN 200720194637U CN 201149866 Y CN201149866 Y CN 201149866Y
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Abstract
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技术领域 technical field
本实用新型涉及一种陶瓷/金属复合结构,尤其涉及一种利用氧化铝层及铜层的结合所形成的复合结构。The utility model relates to a ceramic/metal composite structure, in particular to a composite structure formed by combining an aluminum oxide layer and a copper layer.
背景技术 Background technique
电子零件在电子流动的情况下,皆会产生热,而热的产生会提升电阻,阻碍电子的流动,继而大幅影响电子零件的功能。在电子零件制造技术大幅提升的现况下,电子零件中的线宽越来越小,线路密度却越来越高,因而使得电子零件所产生的热也快速增加。以计算机的中央处理器(CentralProcessing Unit,CPU)为例,Intel公司最早版本的Pentium只需搭配散热功率16W的封装即可。但是,在2004年所生产的中央处理器的发热量已达84W,2006年所生产的中央处理器的发热量更已达98W,若热不能快速被带走,则计算机的中央处理器的温度将快速增加,使计算机的中央处理器不能正常运转。因此,与计算机的中央处理器接触的基板是否具有快速的散热能力,着实是主导计算机能否正常运转的关键因素。When electrons flow in electronic parts, heat will be generated, and the heat generation will increase the resistance, hinder the flow of electrons, and then greatly affect the function of electronic parts. Under the current situation that the manufacturing technology of electronic parts is greatly improved, the line width in electronic parts is getting smaller and smaller, but the circuit density is getting higher and higher, so the heat generated by electronic parts is also increasing rapidly. Taking the computer's central processing unit (Central Processing Unit, CPU) as an example, the earliest version of Intel's Pentium only needs to be packaged with a heat dissipation power of 16W. However, the heat generation of the central processing unit produced in 2004 has reached 84W, and the heat generation of the central processing unit produced in 2006 has reached 98W. If the heat cannot be taken away quickly, the temperature of the central processing unit of the computer will Will increase rapidly, so that the computer's central processing unit can not function properly. Therefore, whether the substrate in contact with the central processing unit of the computer has a rapid heat dissipation capability is really a key factor that determines whether the computer can operate normally.
一般功率组件,如固体继电器,也是类似于计算机的中央处理器,在运作过程中产生高热。因此,功率组件亦需要利用与其接触的基板将热快速散去,方能正常运转。General power components, such as solid state relays, are also similar to the central processing unit of a computer, and generate high heat during operation. Therefore, the power components also need to use the substrate in contact with them to dissipate heat quickly in order to operate normally.
再以发光二极管(Light Emitting Diode,LED)为例,各种颜色的发光二极管在近几年陆续被开发出来,其中又以白光发光二极管的开发成功最为重要。此乃因为白光发光二极管可作为照明灯具的光源,此种光源的路灯用电量比水银灯少75%,比高压钠灯少49%,故具有低耗能的优势,为节约能源的一项重要发展。然而,若以日常生活及车辆的头灯为例,这些应用皆须使用功率大于3W的白光发光二极管,这种大功率的白光发光二极管也会放出高热,但LED照明的最大问题在于LED不耐高热,一般来说温度不能超过90℃,若超过此温度,则亮度将快速下降,故与LED接触的散热机构的快速散热能力是发光二极管能否成为照明光源的最大挑战,这也说明了散热基板的开发对发光二极管于照明方面的应用,具有举足轻重的关键地位。Taking light emitting diodes (Light Emitting Diode, LED) as an example, light emitting diodes of various colors have been developed successively in recent years, among which the successful development of white light emitting diodes is the most important. This is because white light-emitting diodes can be used as light sources for lighting fixtures. The power consumption of street lights of this light source is 75% less than that of mercury lamps and 49% less than that of high-pressure sodium lamps. Therefore, it has the advantage of low energy consumption and is an important development for energy conservation. . However, if we take the headlights of daily life and vehicles as an example, these applications must use white light emitting diodes with a power greater than 3W. Such high-power white light emitting diodes will also emit high heat, but the biggest problem with LED lighting is that LEDs are not resistant to High heat, generally speaking, the temperature cannot exceed 90°C. If it exceeds this temperature, the brightness will drop rapidly. Therefore, the rapid heat dissipation capability of the heat dissipation mechanism in contact with the LED is the biggest challenge for the light-emitting diode to become a lighting source. This also shows that the heat dissipation The development of the substrate plays an important role in the application of light-emitting diodes in lighting.
为同时兼顾现今3C电子产品轻薄短小的设计要求,与以上这些计算机的中央处理器、功率组件或发光二极管组件接触的基板须同时符合以下四个基本要求:In order to take into account the thin and light design requirements of today's 3C electronic products, the substrates that are in contact with the central processing units, power components or light-emitting diode components of these computers must meet the following four basic requirements at the same time:
1.散热方面的要求:此材料须具有高热传导系数,以达到快速散热的要求。1. Requirements for heat dissipation: This material must have a high thermal conductivity to meet the requirements of rapid heat dissipation.
2.绝缘方面的要求:为避免高功率电子零件短路,此材料须具有高电阻系数。2. Insulation requirements: In order to avoid short circuit of high-power electronic parts, this material must have high resistivity.
3.薄层化的要求:在满足以上两个基本要求后,此基板的厚度还应越薄越好。3. Thin layer requirements: After meeting the above two basic requirements, the thickness of the substrate should be as thin as possible.
4.长时间使用的可靠度:这是因高功率电子零件在封装后,高功率电子零件会进行数以万次的开-关(on-off)循环,而与高功率电子零件接触的基板会随之瞬间升降温数万次。电子零件长时间使用后的可靠度是极重要的要求,而这与陶瓷与金属结合强度有绝对关系。4. Reliability of long-term use: This is because after the high-power electronic parts are packaged, the high-power electronic parts will perform tens of thousands of on-off cycles, and the substrate in contact with the high-power electronic parts It will heat up and down tens of thousands of times instantly. The reliability of electronic parts after long-term use is an extremely important requirement, and this has an absolute relationship with the bonding strength of ceramics and metals.
目前在电子零件的散热机构方面,大量使用了散热鳍片及热管等机构,再辅以风扇,以期能将高功率的电子零件所产生的热快速带走。但是,这些散热机构的厚度皆较大,因而阻碍了3C电子产品轻薄短小的设计要求。At present, in terms of heat dissipation mechanisms of electronic components, a large number of mechanisms such as heat dissipation fins and heat pipes are used, supplemented by fans, in order to quickly take away the heat generated by high-power electronic components. However, the thickness of these heat dissipation mechanisms is relatively large, thus hindering the design requirements of 3C electronic products to be light, thin and short.
经全面性的材料搜寻及评估,能符合以上第一个散热的要求及成本考虑下的最佳选择为金属材料,以铜为例,铜的热传导系数可达380W/mK。而能符合以上第二个绝缘的要求选择的材料则很多,绝大多数的有机材料或陶瓷材料皆能符合此要求。为兼顾散热的需求,并考虑长时间可靠度的需求,以陶瓷材料为较佳的选择。在陶瓷材料中能提供高导热及绝缘的材料有氧化铝及氮化铝,氧化铝的热传导系数可达20-38W/mK,而氮化铝的热传导系数更可达40-200W/mK。陶瓷的热传导系数之所以有较大的范围,是因陶瓷的热传导系数受陶瓷的纯度及烧结添加剂影响甚大。再者,氧化铝及氮化铝的电阻系数皆高达1010Ωm以上,因此两个陶瓷皆具有极佳的电绝缘性。又,氧化铝及氮化铝还具有低介电常数(Dielectric constant)及高介电强度(Dielectric strength)等优点,故常用在基板方面。After a comprehensive material search and evaluation, the best choice to meet the above first heat dissipation requirement and cost considerations is the metal material. Taking copper as an example, the thermal conductivity of copper can reach 380W/mK. There are many materials that can meet the second insulation requirement above, and most of the organic materials or ceramic materials can meet this requirement. In order to take into account the requirement of heat dissipation and the requirement of long-term reliability, ceramic material is a better choice. Ceramic materials that can provide high thermal conductivity and insulation include alumina and aluminum nitride. The thermal conductivity of alumina can reach 20-38W/mK, while the thermal conductivity of aluminum nitride can reach 40-200W/mK. The reason why the thermal conductivity of ceramics has a large range is that the thermal conductivity of ceramics is greatly affected by the purity of ceramics and sintering additives. Furthermore, the resistivity of alumina and aluminum nitride is as high as 10 10 Ωm or more, so both ceramics have excellent electrical insulation. In addition, aluminum oxide and aluminum nitride also have the advantages of low dielectric constant (Dielectric constant) and high dielectric strength (Dielectric strength), so they are commonly used in substrates.
为解决基板的散热,现有技术中有研究将陶瓷与铜片结合制成复合结构的基板,陶瓷层夹在两铜片之间,并与铜片直接接触。In order to solve the heat dissipation of the substrate, there are researches in the prior art to combine ceramics and copper sheets to form a substrate with a composite structure. The ceramic layer is sandwiched between the two copper sheets and is in direct contact with the copper sheet.
但因氧化铝为共价键及离子键共存的高熔点固体(熔点>2000℃),而铜原子则以金属键结合,熔点只有1083℃,将氧化铝及铜键结在一起是一个极具挑战性的领域。在现有技术中,将氧化铝及铜键结在一起可以有两种方法,一种方法为固态键结法(Solid state bonding),另一种方法则为液态键结法(Liquid phase bonding)。这两种方法的处理温度都在1000℃以上。However, because alumina is a high-melting solid (melting point > 2000°C) with covalent bonds and ionic bonds coexisting, and copper atoms are combined with metal bonds, the melting point is only 1083°C. Bonding alumina and copper together is a very Challenging field. In the prior art, there are two methods for bonding alumina and copper together, one is solid state bonding, and the other is liquid phase bonding. . The processing temperature of these two methods is above 1000°C.
经长时间的研究,我们发现将氧化铝片及铜片键结在一起的基板,氧化铝及铜之间的界面强度须很高才具有应用价值。这是因氧化铝与铜的键结不同,且铜的热膨胀系数(17×10-6K-1)为氧化铝的热膨胀系数(8×10-6K-1)的两倍。依Selsing所推导的公式(Selsing,J.,J.Am.Ceram.Soc.,44,419,1961),如下所示:After a long period of research, we found that the substrate bonded together by aluminum oxide and copper, the interface strength between aluminum oxide and copper must be very high to have application value. This is because the bonding between alumina and copper is different, and the coefficient of thermal expansion of copper (17×10 −6 K −1 ) is twice that of alumina (8×10 −6 K −1 ). According to the formula derived by Selsing (Selsing, J., J. Am. Ceram. Soc., 44, 419, 1961), it is as follows:
在上式中,Δα是氧化铝与铜的热膨胀系数的差异,ΔT是制造工艺或使用的温度与室温的差异,v是泊松比(Poisson’s ratio),E是弹性常数。因将氧化铝片及铜片键结在一起的温度在1000℃以上,所以氧化铝片与铜片之间因热膨胀系数的差异在高温接合(Joining)后所引起的热应力,估算可以达到数百MPa以上。此热应力非常大,对氧化铝片及铜片结合强度有很大的影响,并且在与会发热的电子零件封装后,在电子零件进行数以万次的开-关循环后,若氧化铝片及铜片结合强度不够高,氧化铝片与铜片之间会产生分层,热分散能力将大幅下降,这对高功率电子零件的长时间使用的可靠度将产生无法弥补的影响。In the above formula, Δα is the difference in thermal expansion coefficient between alumina and copper, ΔT is the difference between the manufacturing process or the temperature used and room temperature, v is Poisson’s ratio, and E is the elastic constant. Since the bonding temperature of the alumina sheet and the copper sheet is above 1000°C, the thermal stress caused by the difference in thermal expansion coefficient between the alumina sheet and the copper sheet after high-temperature joining (Joining) can be estimated to reach several More than 100 MPa. This thermal stress is very large, which has a great influence on the bonding strength of the aluminum oxide sheet and the copper sheet, and after being packaged with electronic parts that generate heat, after tens of thousands of on-off cycles of the electronic parts, if the aluminum oxide sheet And the bonding strength of the copper sheet is not high enough, there will be delamination between the aluminum oxide sheet and the copper sheet, and the heat dispersion ability will be greatly reduced, which will have an irreparable impact on the long-term use reliability of high-power electronic components.
因此,如何提供一种具有高结合强度的陶瓷/金属复合结构,实为亟待解决的问题。Therefore, how to provide a ceramic/metal composite structure with high bonding strength is an urgent problem to be solved.
发明内容 Contents of the invention
为解决上述技术问题,本实用新型的目的是提供一种陶瓷/金属复合结构,通过陶瓷与金属材料之间形成的强键结,实现在薄型化及长时间的可靠度之下,为电子元件提供良好的散热及绝缘功能的目的。In order to solve the above technical problems, the purpose of this utility model is to provide a ceramic/metal composite structure, through the strong bond formed between the ceramic and the metal material, it can be used as an electronic component under thinning and long-term reliability. The purpose of providing good heat dissipation and insulation functions.
为实现上述目的,本实用新型提供了一种陶瓷/金属复合结构,其包括:一下金属层;一下金属界面层,披覆于下金属层上;一陶瓷基板,位于下金属界面层上;一上金属界面层,披覆于陶瓷基板上;及一上金属层,位于上金属界面层上。In order to achieve the above object, the utility model provides a ceramic/metal composite structure, which includes: a lower metal layer; a lower metal interface layer, covered on the lower metal layer; a ceramic substrate, located on the lower metal interface layer; The upper metal interface layer is coated on the ceramic substrate; and an upper metal layer is located on the upper metal interface layer.
根据本实用新型的具体方案,所述陶瓷基板可以是由包括氧化铝、氧化硅、氮化铝、氮化硅、碳化硅、玻璃和玻璃陶瓷等材料中的一种或一种以上的组合制成的基板。According to a specific solution of the present utility model, the ceramic substrate may be made of one or a combination of materials including alumina, silicon oxide, aluminum nitride, silicon nitride, silicon carbide, glass, and glass ceramics. finished substrate.
所述下金属层与上金属层可以为铜片层。The lower metal layer and the upper metal layer may be copper sheet layers.
所述披覆包括利用常规的无电镀方式将下金属界面层和上金属界面层分别披覆于下金属层和陶瓷基板上,所述无电镀方式例如可以是沉积(deposition)或涂布(coating)等方式。The coating includes coating the lower metal interface layer and the upper metal interface layer on the lower metal layer and the ceramic substrate respectively by using a conventional electroless plating method. The electroless plating method can be, for example, deposition or coating. ) etc.
根据本实用新型的具体方案,上金属层上设置有至少一线路或接点,以利于所述复合结构与高功率电子元件整合及封装,达成良好的电连接及散热功能。According to a specific solution of the present invention, at least one line or contact is arranged on the upper metal layer, so as to facilitate the integration and packaging of the composite structure and high-power electronic components, and achieve good electrical connection and heat dissipation functions.
本实用新型所提供的复合结构可以具有至少一缺口,该缺口沿上金属层至少延伸到上金属界面层上。The composite structure provided by the utility model may have at least one notch, and the notch extends along the upper metal layer to at least the upper metal interface layer.
本实用新型所述的陶瓷/金属复合结构还可以包括一电子元件,其位于上述缺口中。为达到更好的散热效果,可以设置导热胶。根据本实用新型的具体方案,当所述缺口沿上金属层延伸到陶瓷基板上时,该缺口内的陶瓷基板上设有导热胶,所述电子元件设于该导热胶上,或者,当所述缺口沿上金属层延伸到上金属界面层上时,该缺口内的上金属界面层上设有导热胶,所述电子元件设于该导热胶上。The ceramic/metal composite structure described in the present invention can also include an electronic component, which is located in the aforementioned gap. In order to achieve a better heat dissipation effect, thermal conductive glue can be provided. According to the specific solution of the present utility model, when the gap extends to the ceramic substrate along the upper metal layer, the ceramic substrate in the gap is provided with a heat-conducting glue, and the electronic components are arranged on the heat-conducting glue, or, when the When the notch extends along the upper metal layer to the upper metal interface layer, the upper metal interface layer in the notch is provided with heat-conducting glue, and the electronic components are arranged on the heat-conducting glue.
该陶瓷/金属复合结构中还可以设置多条导线,其连接所述电子元件到上述上金属层。而且,所述缺口周边处的上金属层可以形成斜面或曲面,当电子元件为LED时,该斜面或曲面可以将电子元件的非主要光线反射朝上,以增加电子元件的发光效率。A plurality of wires may also be arranged in the ceramic/metal composite structure, which connect the electronic components to the above-mentioned upper metal layer. Moreover, the upper metal layer at the periphery of the notch can form a slope or a curved surface. When the electronic component is an LED, the slope or curved surface can reflect the non-main light of the electronic component upwards, so as to increase the luminous efficiency of the electronic component.
另外,本实用新型所提供的陶瓷/金属复合结构中,可以将多组的电子元件以任意排列方式配置于陶瓷基板上,例如排列成阵列的形式配置于陶瓷基板上方。In addition, in the ceramic/metal composite structure provided by the present invention, multiple sets of electronic components can be arranged on the ceramic substrate in any arrangement, for example arranged in an array above the ceramic substrate.
本实用新型所提供的陶瓷/金属复合结构的制造方法可以包括以下步骤:The manufacturing method of the ceramic/metal composite structure provided by the utility model may comprise the following steps:
首先,提供一陶瓷基板;First, a ceramic substrate is provided;
然后,于陶瓷基板两侧表面分别披覆上金属界面层和下金属界面层,举例而言,两个金属界面层是可以以无电镀方式披覆于陶瓷基板上;Then, coat the upper metal interface layer and the lower metal interface layer on both sides of the ceramic substrate respectively. For example, the two metal interface layers can be coated on the ceramic substrate by electroless plating;
接着,将上金属层置于上金属界面层上,将下金属层置于下金属界面层上。值得注意的是,金属层在被置于金属界面层上以前,可以先进行多阶段的预氧化处理,多阶段的预氧化处理分别于50至700℃的温度下进行;Next, the upper metal layer is placed on the upper metal interface layer, and the lower metal layer is placed on the lower metal interface layer. It is worth noting that before the metal layer is placed on the metal interface layer, multi-stage pre-oxidation treatment can be performed first, and the multi-stage pre-oxidation treatment is carried out at a temperature of 50 to 700 ° C;
然后,加热陶瓷基板、上金属界面层、下金属界面层、上金属层和下金属层,使各金属界面层同时与陶瓷基板及各金属层接合形成强键结。举例而言,可以将陶瓷基板、上金属界面层、下金属界面层、上金属层和下金属层加热至1000℃以上以形成强键结,制成本实用新型的陶瓷/金属复合结构。Then, the ceramic substrate, the upper metal interface layer, the lower metal interface layer, the upper metal layer and the lower metal layer are heated, so that each metal interface layer is bonded with the ceramic substrate and each metal layer simultaneously to form a strong bond. For example, the ceramic substrate, the upper metal interface layer, the lower metal interface layer, the upper metal layer and the lower metal layer can be heated to above 1000° C. to form a strong bond to make the ceramic/metal composite structure of the present invention.
综上所述,本实用新型揭露一种结合铜及氧化铝的复合结构,此载板同时提供散热及绝缘的基本要求。且因铜的电阻系数极低,只有10-4Ω·m,故可以蚀刻方式在铜的部分做出各种线路或接点。通过此线路或接点,此复合结构可与高功率电子零件整合及封装,达成良好的电连接及散热的功能。此外,利用本实用新型的复合结构制作基板,因复合结构的界面强度高,对往后会进行数以万次的开-关(on-off)循环的高功率电子零件的寿命的增长,亦有极大帮助。To sum up, the utility model discloses a composite structure combining copper and alumina, and the carrier board provides the basic requirements of heat dissipation and insulation at the same time. And because the resistivity of copper is extremely low, only 10 -4 Ω·m, various lines or contacts can be made on the copper part by etching. Through the lines or contacts, the composite structure can be integrated and packaged with high-power electronic components to achieve good electrical connection and heat dissipation functions. In addition, using the composite structure of the present utility model to make the substrate, because the interface strength of the composite structure is high, it will also increase the life of high-power electronic components that will undergo tens of thousands of on-off cycles in the future. has been of great help.
附图说明 Description of drawings
图1显示依据本实用新型实施例1的陶瓷/金属复合结构的俯视示意图。FIG. 1 shows a schematic top view of a ceramic/metal composite structure according to
图2显示依据本实用新型实施例1的陶瓷/金属复合结构的剖面示意图。FIG. 2 shows a schematic cross-sectional view of the ceramic/metal composite structure according to
图3显示依据本实用新型实施例2的陶瓷/金属复合结构的俯视示意图。FIG. 3 shows a schematic top view of a ceramic/metal composite structure according to Embodiment 2 of the present invention.
图4显示依据本实用新型实施例2的陶瓷/金属复合结构的剖面示意图。FIG. 4 shows a schematic cross-sectional view of a ceramic/metal composite structure according to Embodiment 2 of the present invention.
图5显示依据本实用新型实施例3的陶瓷/金属复合结构的剖面示意图。FIG. 5 shows a schematic cross-sectional view of a ceramic/metal composite structure according to Embodiment 3 of the present invention.
图6显示依据本实用新型实施例3的陶瓷/金属复合结构的俯视示意图。FIG. 6 shows a schematic top view of a ceramic/metal composite structure according to Embodiment 3 of the present invention.
图7显示依据本实用新型实施例4的陶瓷/金属复合结构的剖面示意图。FIG. 7 shows a schematic cross-sectional view of a ceramic/metal composite structure according to Embodiment 4 of the present invention.
图8显示依据本实用新型实施例5的陶瓷/金属复合结构的剖面示意图。FIG. 8 shows a schematic cross-sectional view of a ceramic/metal composite structure according to Embodiment 5 of the present invention.
图9显示依据本实用新型实施例6的陶瓷/金属复合结构的俯视示意图。FIG. 9 shows a schematic top view of a ceramic/metal composite structure according to Embodiment 6 of the present invention.
图10显示依据本实用新型的陶瓷/金属复合结构的测试结果图。Fig. 10 shows a graph of test results of the ceramic/metal composite structure according to the present invention.
主要组件符号说明:Description of main component symbols:
11:下金属层 12:下金属界面层11: Lower metal layer 12: Lower metal interface layer
13:陶瓷基板 14:上金属界面层 15:上金属层/铜片13: Ceramic substrate 14: Upper metal interface layer 15: Upper metal layer/copper sheet
16:缺口 17:斜面 18:曲面16: Notch 17: Bevel 18: Curved surface
19:电子元件 20:导热胶 21:导线19: Electronic components 20: Thermally conductive adhesive 21: Wire
22:封装材料22: Encapsulation material
具体实施方式Detailed ways
为让本实用新型的上述内容能更明显易懂,下文特举较佳实施例,并配合附图,作如下详细说明。In order to make the above content of the present invention more obvious and understandable, the preferred embodiments will be described in detail below together with the accompanying drawings.
实施例1Example 1
根据本实用新型的实施例1并结合图1和图2,本实用新型所提供的陶瓷/金属复合结构包括一下金属层11、一下金属界面层12、一陶瓷基板13、一上金属界面层14及一上金属层15。其中,下金属层11可以为铜片层,下金属层11的厚度可以介于0.1至2毫米之间,下金属界面层12位于下金属层11上。According to
陶瓷基板13位于下金属界面层12上。陶瓷基板13的厚度介于0.1至3毫米之间。陶瓷基板13可以是由包括氧化铝、氧化硅、氮化铝、氮化硅、碳化硅、玻璃和玻璃陶瓷等材料中的一种或一种以上的组合所制成的基板。The
上金属界面层14位于陶瓷基板13上。上金属界面层14或下金属界面层12可以是由包括金、铍、铋、钴、铜、铁、镍、钯、铂、钛、钇以及其合金等材料中的一种或一种以上的组合所制成的金属界面层。或者,上金属界面层14或下金属界面层12优选可以是由包括镍、镍合金、铜以及铜合金中的一种或一种以上的组合所制成的金属界面层。上金属界面层14或下金属界面层12的厚度介于0.1微米至10微米之间,更佳是介于1微米至5微米之间。The upper
上金属层15位于上金属界面层14上。上金属层15可以是一铜片层,其上具有一条或多条线路或者一个或多个接点。上金属层15的厚度介于0.1至2毫米之间。The
实施例2Example 2
根据本实用新型的实施例2并结合图3和图4,图4为图3的A-A方向剖视图。实施例2类似于实施例1,不同之处在于上金属层15具有至少一缺口16,或者,缺口16中的陶瓷基板13也可以形成有上金属界面层14(图中未显示)。According to Embodiment 2 of the present utility model and in combination with FIG. 3 and FIG. 4 , FIG. 4 is a sectional view along the A-A direction of FIG. 3 . Embodiment 2 is similar to
实施例3Example 3
根据本实用新型的实施例3并结合图5和图6(为了清楚显示,图6并未显示出封装材料22),图5为图6的B-B方向剖视图。实施例3的陶瓷/金属复合结构更可以包括一电子元件19,其位于该复合结构的缺口16中,且配置于陶瓷基板13上。电子元件19可以为中央处理器、功率组件(例如:功率晶体管)或发光二极管组件。值得注意的是,在第四实施例中,本实用新型可将电子元件19视为是陶瓷/金属复合结构的一部分。According to Embodiment 3 of the present utility model in conjunction with FIG. 5 and FIG. 6 (for clarity, FIG. 6 does not show the encapsulation material 22 ), FIG. 5 is a cross-sectional view along the B-B direction of FIG. 6 . The ceramic/metal composite structure of Embodiment 3 may further include an
为了达成较佳的热传导效果,该陶瓷/金属复合结构中可以设置导热胶20。In order to achieve a better heat conduction effect, a
当缺口16沿上金属层15延伸到陶瓷基板13上时,该缺口16内的陶瓷基板13上设有导热胶20,所述电子元件19设于该导热胶20上,或者,当所述缺口16沿上金属层15延伸到上金属界面层14上时(图中未显示),该缺口16内的上金属界面层14上设有导热胶20,所述电子元件19设于该导热胶20上。所述导热胶20可以是由有机高分子材料与金属或陶瓷填充材料混合而成。金属或陶瓷填充材料可以包括银颗粒、铜颗粒、铝颗粒、氧化铝颗粒、氮化铝颗粒、氮化硼颗粒和硼化钛颗粒等中的一种或一种以上的组合。此导热胶20的热传导系数一般可达到3W/mK以上。When the
为了控制电子元件19的工作,本实施例的陶瓷/金属复合结构更可以包括多条导线21,用以连接电子元件19至上金属层15。封装材料22封装电子元件19及导线21。电子元件19所散发出来的大部分的热是朝着图7的箭头所示的方向传导散逸。In order to control the operation of the
实施例4Example 4
图7显示依据本实用新型实施例4的陶瓷/金属复合结构的剖面示意图。如图7所示,本实施例的复合结构的缺口16周边处的上金属层15形成有斜面17。当电子元件19为LED时,斜面17可以将电子元件19的非主要光线反射朝上,以增加电子元件19的发光效率。FIG. 7 shows a schematic cross-sectional view of a ceramic/metal composite structure according to Embodiment 4 of the present invention. As shown in FIG. 7 , an
实施例5Example 5
图8显示依据本实用新型实施例5的陶瓷/金属复合结构的剖面示意图。如图8所示,本实施例的复合结构的缺口16周边的上金属层15形成有曲面18。当电子元件19为LED时,曲面18亦可以将电子元件19的非主要光线反射朝上,以增加电子元件19的发光效率。FIG. 8 shows a schematic cross-sectional view of a ceramic/metal composite structure according to Embodiment 5 of the present invention. As shown in FIG. 8 , a
实施例6Example 6
图9显示依据本实用新型实施例6的陶瓷/金属复合结构的俯视示意图。如图9所示,多组的电子元件19可以排列成数组(或称阵列形式),而配置于陶瓷基板13上方。FIG. 9 shows a schematic top view of a ceramic/metal composite structure according to Embodiment 6 of the present invention. As shown in FIG. 9 , multiple sets of
为提升界面强度,改善陶瓷/金属复合结构的可靠度,本实用新型的复合结构可以通过多阶段预氧化的制造工艺制造,经此种多阶段预氧化的处理,金属层表面可产生适当的氧化物,使金属层与陶瓷基材能在一般熟知的共晶温度之下即可接合成功,而且所产生的陶瓷/金属的键结很强,有效提高陶瓷基材与金属层之间的界面强度,进而提高陶瓷/金属复合结构在反复升降温使用时的可靠度。而且此种多阶段预氧化的温度低(多阶段预氧化的最高温度的绝对温度值与铜的熔点的绝对温度值的比值在0.75以下),故对成本降低将有贡献,而且更重要的是以此较低温的预氧化条件,可制作出具有高界面强度的热分散基板。且以此种多阶段预氧化再接合的陶瓷/金属复合结构具有极佳的散热能力,可同时提供快速散热的能力及绝缘方面的要求。依此精神所制作出的陶瓷与金属接合的基板,皆可视为本实用新型的延伸。In order to enhance the interface strength and improve the reliability of the ceramic/metal composite structure, the composite structure of the present invention can be manufactured through a multi-stage pre-oxidation manufacturing process. After this multi-stage pre-oxidation treatment, the surface of the metal layer can be properly oxidized material, so that the metal layer and the ceramic substrate can be successfully bonded under the generally well-known eutectic temperature, and the resulting ceramic/metal bond is very strong, which effectively improves the interface strength between the ceramic substrate and the metal layer , and then improve the reliability of the ceramic/metal composite structure when it is used repeatedly in temperature rise and fall. And the temperature of this multi-stage pre-oxidation is low (the ratio of the absolute temperature value of the maximum temperature of multi-stage pre-oxidation and the absolute temperature value of the melting point of copper is below 0.75), so it will contribute to cost reduction, and more importantly With this relatively low temperature pre-oxidation condition, a thermal dispersion substrate with high interface strength can be produced. Moreover, the multi-stage pre-oxidized and rejoined ceramic/metal composite structure has excellent heat dissipation capability, and can simultaneously provide rapid heat dissipation capability and insulation requirements. The ceramic-metal substrates produced according to this spirit can be regarded as the extension of the present invention.
试验例Test case
将尺寸大小为32×23×0.5mm的氧化铝基板(氧化铝纯度为96%),先以无电镀的方式在氧化铝基板上涂布上一层金属铜层,此金属铜层的厚度为2-4微米,然后与厚度为0.3mm且已经经过100℃至600℃之间两个不同温度及氧分压的两阶段预氧化的铜片,在已经施以温度校正的管炉中,在1056℃及流动氮气下施以高温接合处理。在高温接合时,此金属合金薄层可同时与氧化铝片与铜片接合,且形成强键结。接合后的氧化铝/铜复合结构以万能试验机(Universal Testing Machine,MTS-810,美国MTS公司),三点式抗折方式(3-point bending method)测试氧化铝基板在承受应力下的应变行为,其中的承受应力的两点宽度为22.5mm,应力施加速率为0.002mm/秒,所得应力-应变曲线如图10所示。氧化铝/铜复合结构在承受190牛顿(Newton)的应力后,应力下降至90牛顿,然后继续测试,仍能承受更高应力至160牛顿,然后下降,继而上升下降,在位移量为0.8毫米(mm)时停止测试,并进行观察,此时复合结构并未破裂,仍维持试样的完整性。经对观察测试后的复合结构的观察,此复合结构中的氧化铝基板已有一小裂缝,但与铜片的界面并未完全分开,铜片仍能紧紧的抓住氧化铝片,且仍能维持此复合结构的完整性。An alumina substrate with a size of 32×23×0.5mm (the purity of alumina is 96%) is first coated with a metal copper layer on the alumina substrate by electroless plating. The thickness of the metal copper layer is 2-4 microns, and then with a two-stage pre-oxidized copper sheet with a thickness of 0.3 mm and two different temperatures and oxygen partial pressures between 100 ° C and 600 ° C, in a tube furnace that has been subjected to temperature correction, in 1056°C and high-temperature bonding treatment under flowing nitrogen. During high-temperature bonding, this metal alloy thin layer can be bonded to aluminum oxide sheet and copper sheet at the same time, and form a strong bond. The bonded aluminum oxide/copper composite structure was tested with a universal testing machine (Universal Testing Machine, MTS-810, MTS, USA) and a three-point bending method (3-point bending method) to test the strain behavior of the aluminum oxide substrate under stress. The width of the two stress-bearing points is 22.5 mm, and the stress application rate is 0.002 mm/sec. The resulting stress-strain curve is shown in FIG. 10 . After the aluminum oxide/copper composite structure bears a stress of 190 Newton (Newton), the stress drops to 90 Newton, and then continues to test, it can still withstand a higher stress to 160 Newton, then drops, then rises and falls, and the displacement is 0.8 mm (mm) to stop the test and observe. At this time, the composite structure is not broken, and the integrity of the sample is still maintained. Observation of the composite structure after the observation test shows that the aluminum oxide substrate in this composite structure has a small crack, but the interface with the copper sheet is not completely separated, and the copper sheet can still hold the aluminum oxide sheet tightly, and still The integrity of the composite structure can be maintained.
以上例子证明在氧化铝或铜表面涂布上一层薄薄的铜金属层,可提升此复合结构的强度,因金属铜层的存在,确实可观察到铜片对氧化铝的润湿角下降,界面强度因而提升。此中间金属镀膜不仅对界面强度提升有益,对往后会进行数以万次的开-关(on-off)循环的高功率电子零件的寿命的增长,亦有极大帮助。The above examples prove that coating a thin layer of copper metal on the surface of alumina or copper can improve the strength of the composite structure. Due to the existence of the metal copper layer, the wetting angle of the copper sheet to the alumina can indeed be observed to decrease. , the interface strength is thus enhanced. This intermediate metal coating is not only beneficial to the improvement of the interface strength, but also greatly helps to increase the life of high-power electronic components that will undergo tens of thousands of on-off cycles in the future.
在较佳实施例的详细说明中所提出的具体实施例仅方便说明本实用新型的技术内容,而非将本实用新型狭义地限制于上述实施例,在不超出本实用新型的精神及以下权利要求保护范围的情况,所做的种种变化实施,皆属于本实用新型的范围。The specific embodiments proposed in the detailed description of the preferred embodiments are only convenient to illustrate the technical content of the present utility model, rather than restricting the utility model to the above-mentioned embodiments in a narrow sense, without exceeding the spirit of the utility model and the following rights In the case of claiming the scope of protection, the implementation of various changes all belong to the scope of the present utility model.
Claims (9)
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208392A (en) * | 2010-03-29 | 2011-10-05 | 段维新 | A high reflection and high thermal conductivity electrical component and its manufacturing method |
| US8127441B2 (en) | 2007-02-09 | 2012-03-06 | National Taiwan University | Method of manufacturing ceramic/metal composite structure |
| CN101439984B (en) * | 2007-11-19 | 2012-07-04 | 段维新 | Ceramic/metal composite structure and method of manufacturing the same |
| US9586382B2 (en) | 2008-01-24 | 2017-03-07 | National Taiwan University | Ceramic/metal composite structure |
| CN109970462A (en) * | 2017-12-28 | 2019-07-05 | 惠州比亚迪电子有限公司 | One kind covering copper ceramic wafer and preparation method thereof |
-
2007
- 2007-11-19 CN CN200720194637.4U patent/CN201149866Y/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8127441B2 (en) | 2007-02-09 | 2012-03-06 | National Taiwan University | Method of manufacturing ceramic/metal composite structure |
| CN101439984B (en) * | 2007-11-19 | 2012-07-04 | 段维新 | Ceramic/metal composite structure and method of manufacturing the same |
| US9586382B2 (en) | 2008-01-24 | 2017-03-07 | National Taiwan University | Ceramic/metal composite structure |
| CN102208392A (en) * | 2010-03-29 | 2011-10-05 | 段维新 | A high reflection and high thermal conductivity electrical component and its manufacturing method |
| CN109970462A (en) * | 2017-12-28 | 2019-07-05 | 惠州比亚迪电子有限公司 | One kind covering copper ceramic wafer and preparation method thereof |
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