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TW201006337A - Printing wiring cardinal plate and method for producing the same - Google Patents

Printing wiring cardinal plate and method for producing the same Download PDF

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Publication number
TW201006337A
TW201006337A TW098117258A TW98117258A TW201006337A TW 201006337 A TW201006337 A TW 201006337A TW 098117258 A TW098117258 A TW 098117258A TW 98117258 A TW98117258 A TW 98117258A TW 201006337 A TW201006337 A TW 201006337A
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Taiwan
Prior art keywords
film
layer
metal
metal layer
mass
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TW098117258A
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Chinese (zh)
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TWI362911B (en
Inventor
Hiroto Watanabe
Harumi Nagao
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Sumitomo Metal Mining Co
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Publication of TWI362911B publication Critical patent/TWI362911B/zh

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/188Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03Metal processing
    • H05K2203/0369Etching selective parts of a metal substrate through part of its thickness, e.g. using etch resist
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/0723Electroplating, e.g. finish plating

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

The invention provides a printing wiring cardinal plate with high insulation reliability and corrosion resistance and method for producing the same, namely the conductor wiring is formed with high etching, when etching is performed by ferric chloride solution or hydrochloric acid solution of copper chloride, residual etching draff with ingredients of the base metal layer between the conductor wirings are few, when high voltage is exerted among the conductor wirings. On at least one surface of the insulating resin film A, a metallic layer B with nickel, or nickel-chromium alloy containing nickel above 70 quality percentage and chromium below 15 quality percentage is stacked in series without an adhesive agent; a metallic layer C made of alloy containing chromium over 15 weight percentage, unnecessary part of a metal membrane composed by copper tunica layer D with thickness 10 nm to 35 Mum, chemical etching processing is adopted for selective removal, and then the printing wiring cardinal plate of conductor wirings is formed.

Description

201006337 六、發明說明: •【發明所屬之技術領域】 ' H _於印刷佈線基板及其製造方法 ,更詳細地說, 係關於在絕、缘梏|脂膜與銅被膜層之間採用乾式鍍敷法依專 形成㈣性良好的金屬層與雜性高的金屬層 ’而具有南絕 緣可#_印刷佈線基板及其製造方法。 【先前技術】 鲁 ▼撓性印刷佈線基板係大致區分為:在絕緣樹脂膜上採用 接著劑貼合作為導體層的銅箔的3層樹脂膜金屬膜積層基 板(例如,參照專利文獻1),和在絕緣樹脂膜上以不採用 接著劑的乾式鍍敷法或濕式鍍敷法直接形成作為導體層的 銅被膜層之2層樹脂膜金屬膜積層基板。 但是,近年來伴隨著電子儀器的高密度化,係要求佈線寬 經窄節距(pitch)化的佈線基板,在上述3層樹脂膜金屬骐 籲積層基板的製造中,將在絕緣樹脂膜上形成的銅被膜層,按 照所希望的佈線圖案利用蝕刻形成導體佈線部,但該導體佈 線部的侧面產生被過度蝕刻的所謂侧蝕,結果產生佈線部的 斷面形狀易變成下部寬大之梯形的問題。 ^ 因此,為了解決該問題,以2層樹脂膜金屬膜積層基板代 . 替原來的貼合銅箔(3層樹脂膜金屬膜積層基板)現已成為 主流。 該2層樹脂膜金屬膜積層基板係在絕緣樹脂膜上形成均 098117258 3 201006337 勾厚度的練覆層,作為其手段,通常係採用電鑛法。而且, 為了進行電鑛,-般是在電卿成前,在絕緣樹脂膜上形成 薄的金屬層而對整個表面賦予導電性,並於其上進行電鑛 (例如’參照專利文獻2)。另外,在絕緣樹脂膜上形成之 薄金屬層,係採用真空蒸鑛法、離子鑛法等乾式魏法來形 成。 如此’絕緣樹脂膜與銅被覆層的密合性係當在其界面形成201006337 VI. Description of the invention: • [Technical field to which the invention pertains] 'H _ printed wiring substrate and its manufacturing method, more specifically, dry plating between the film and the copper film layer The coating method has a south-insulating metal substrate and a method for manufacturing the same according to a metal layer having a good (four) property and a metal layer having a high impurity. [Prior Art] The flexible printed wiring board is roughly divided into a three-layer resin film metal film laminated substrate in which a copper foil of a conductor layer is bonded to an insulating resin film by an adhesive (for example, see Patent Document 1). And a two-layer resin film metal film laminated substrate in which a copper film layer as a conductor layer is directly formed on the insulating resin film by a dry plating method or a wet plating method without using an adhesive. However, in recent years, with the increase in the density of electronic devices, a wiring board having a narrow pitch is required, and in the production of the above-mentioned three-layer resin film metal-clad laminate substrate, it will be on the insulating resin film. In the formed copper film layer, the conductor wiring portion is formed by etching in accordance with a desired wiring pattern. However, the side surface of the conductor wiring portion is so-called side etching which is excessively etched. As a result, the cross-sectional shape of the wiring portion is likely to become a trapezoidal shape having a wide lower portion. problem. Therefore, in order to solve this problem, a two-layer resin film metal film laminated substrate has been replaced by the original laminated copper foil (three-layer resin film metal film laminated substrate). The two-layer resin film metal film laminate substrate is formed on the insulating resin film to form a coating layer having a thickness of 098117258 3 201006337. As a means, an electric ore method is generally used. In addition, in order to carry out the electric ore, a thin metal layer is formed on the insulating resin film to impart conductivity to the entire surface, and electric ore is applied thereto (see, for example, Patent Document 2). Further, the thin metal layer formed on the insulating resin film is formed by a dry Wei method such as a vacuum distillation method or an ion ore method. Thus, the adhesion of the insulating resin film to the copper coating layer is formed at the interface thereof.

CuO或Cu2〇等脆弱層時變得非常弱,所以,為了保持對印刷 佈線板所要求的與銅被膜層的密合強度,在絕緣樹脂膜與銅 被覆層之間,作為基底金屬層係設置鎳—鉻合金層(參照專 利文獻3)。之後,把基底金屬層與銅被膜層構成的積層體 作為金屬膜。 2層樹脂膜金屬膜積層基板的佈線圖案係可採用減去法 (subtractive process)而形成。該減去法係指把樹脂膜 金屬膜積層基板的金屬膜不需要部分利用化學蝕刻處理加 以除去,以製造印刷佈線基板的製造方法。 該化學姓刻處理係由採用化學姓刻液把不需要的金屬膜 進行侵蝕和用以除去化學蝕刻液的水洗所構成,在化學蝕刻 處理時,一般係將化學蝕刻液或水採用淋浴法等進行嘴射, 或在化學餘刻液等中浸潰而進行。 與銅被膜層的蝕刻對應的化學蝕刻液係例如有氣化鐵 (FeCl3.2H2〇)水溶液、鹽酸酸性氣化銅(CuCl2.2H2〇)水 098117258 4 201006337 溶液,進行使用此等物質的化學蝕刻處理,可形成導體佈線。 k 採用此等化學韻刻液的化學银刻法中,作為基底金屬層, 若從耐蝕性的觀點看,當採用鉻含量高的鎳一鉻合金時,化 學蝕刻不能充分進行,在導體佈線邊緣、導體佈線間會殘留 基底金屬層,產生作為姓刻殘渣的金屬殘渣,有時無法得到 充分的蝕刻成果。 另外’作為絕緣可靠性方面的問題點,在絕緣可靠性的指 Φ 標中,係可實施恆溫恆濕偏流試驗(以下有時稱作HHBT試 驗:High Temperature High Humidity Bias Test)等。產 生上述蝕刻殘渣的基板或採用鉻含量低的基底金屬層的可 撓性印刷佈線基板,在HHBT試驗中明確顯示絕緣可靠性不 充分。 即,將具有含鉻量高的基底金屬層的2層樹脂膜金屬膜積 層基板進行上述化學钱刻處理時,當鎳一絡合金等基底金屬 ❷層由於姓刻不足而殘留之情況,若進行HHBT試驗,相鄰的 導體佈線會因佈線間殘留的基底金屬層成分構成的金屬殘 渣而產生短路的問題。 另一方面,具有含鉻量低的基底金屬層之2層樹脂膜金屬 膜積層基板中,雖無蚀刻殘渣發生,但由於不能確保基底金 - 屬層的耐蝕性,故不能確保HHBT試驗中的絕緣可靠性。因 此,對基底金屬層要求蝕刻性及耐蝕性的相反特性。 於是’作為實現絕緣可靠性的手段之一,必須把上述導體 098117258 5 201006337 佈線間殘留的㈣殘逢除去,而作為相關的該缺點的改正辦 法’例如於專利文獻4巾提出:採用屬於對應於銅被膜的化 學钱刻液之氣化鐵溶液或鹽酸酸性氣化銅溶液進行餘刻處 理後’併用含鹽酸的酸性_彳液過猛㈣溶液等驗性敍刻 液的1種<2種以上進行處理,藉以溶解佈線間的蚀刻殘潰。 另外’專利文獻5中提出:將佈線間的侧殘潰利用含鹽 酸與硫酸的騎it行化學㈣,並於祕_触氧化钟與 氫氧化鈉的混合液中進行浸潰處理。 Λ外’專利文獻6中提出:將佈線間的㈣殘潰利用含鹽 酸的酸性化學烟料叹解H利齡缝化鉀或過 猛酸鹽驗性㈣液進行處理。當使用含鐵氰化鉀或過巍酸 鹽的驗性#刻液之情況’係可採賴佈線的韻少的方法, 將佈線間㈣的錄鉻合金或錄鉻钥合金予以除去。 [專利文獻1]曰本專利特開平6_ 132628號公報 [專利文獻2]日本專利特開平8—139448號公報 [專利文獻3]日本專利特開平6_12〇63〇號公報 [專利文獻4]日本專利特開2〇〇5_2334〇號公報 [專利文獻5]曰本專利第3888587號 [專利文獻6]日本專利特開2〇〇8一2815{)號公報 【發明内容】 (發明所欲解決之問題) 但是’最近的可撓性印刷佈線基板係進行著伴隨佈線圖案 098117258 6 201006337 的更加高密度化之佈線窄節距化’又’伴隨著高性能化,要 _求在高電壓下使用’其結果,所用之印刷佈線基板的絕緣可 靠性變得重要,而為了耐高電壓,對基底金屬層係要求更高 的耐姓性。 因此,從耐蝕性的觀點考慮,可見設置鎳一鉻合金的鉻含 量高的基底層的傾向’結果是因為化學蝕刻處理而在導體佈 線間有基底金屬層成勿殘留的姓刻殘邊之發生有增高的傾 馨 向。 又,在將習知2層樹脂膜金屬膜積層基板採用減去法而形 成導體佈線圖案時’由於採用氣化鐵水溶液或鹽酸酸性氣化 銅水溶液的1種化學蝕刻液進行蝕刻處理,故為了除去蝕刻 殘渣而增加新的蝕刻處理步驟,必須嶄新地導入設備,會有 設備成本及液體管理成本增大的問題以及因步驟增加而導 致生產效率降低之虞。 ❹本發明是為了解決該等問題而提出者,其目的為提供在使 用乾式鍍敷法及紐㈣可触印刷佈祕板之製造中,在 絕緣樹脂膜的至少單面上形成基底金屬層,並於該基底金屬 層上形成紐膜層時,在導體佈線形成時具有高侧性的印 刷佈線基板及其製造方法,具體而言係採用氯化鐵水溶液或 鹽酸酸性氯倾水溶錢行_時,在導體佈線㈣留的基 底金屬層成分的_殘渣少,對導體佈線_加高電壓時, 兼具有高的絕緣可靠性及耐蝕性。 098117258 7 201006337 (解決問題之手段) ;上述狀况’本發明人進行悉心研究,結果發現藉 由在絕緣樹脂膜的單面或兩面上不介隔接著劑地積層金屬 層B、金屬層C、鋼被膜層D,可以實現確保絕緣可靠性與 兼具耐蝕性的印刷佈線基板。 本發明的第1發明係一種印刷佈線基板,係藉由化學餘刻 ^理’選擇性地除去不介隔接著劑而將金屬膜積層在絕緣樹 脂膜A的至少_個表面上所成的樹脂膜金屬膜積層基板之❹ 上述金屬膜的不需要部分’而形成導體佈線者其特徵在 於,構成上述導體佈線的金屬膜包括:在上述絕緣樹脂膜A 的表面上積層的金屬層B,該金屬層b由錄或者含質量% 以上的錦和未滿15質量%的鉻之錄-絡合金構成;在上述金 屬層B的表面積層的金屬層c,該金屬層c包含含錄、含鉻 15質量%以上的合金;以及在上述金屬層c的表面積層之膜 厚10nm〜35/zm的鋼被膜層D ;僅使用姓刻上述銅被膜層D © 的化學蝴液’以選擇性地除去上述金屬膜的不需要部分β 本發明的第2發明係於第1發明的印刷佈線基板中,對包 含依序積層有上述金屬層Β、金屬層C及銅被膜層D的上述 金屬膜之導體佈線’採用氣化鐵水溶液或鹽酸酸性氯化銅水 - 溶液進打化學餘刻處理後,在上述絕緣樹脂膜Α上殘留的金 - 屬的殘》查量’於上述絕緣樹脂膜A的每單位面積係為0. 13 // g/cm2 以下。 098117258 8 201006337 第3發明係於第1發明或第2發明的印刷佈線基板中,上 述金屬層B含有飢13質量%以下、鈦§質量%以下、錮20 質量%以下,而餘量為錄或者含70質量%以上的癌和未滿15 質量%的鉻之鎳-鉻合金與1質量%以下的不 < 避免雜質構 成,其膜厚為3〜20nm。 第4發明係於第1發明至第3發明中任一項所述的印刷佈 線基板中,上述金屬層C係含鉻15質量%以上、鎳〇. 01〜 ❿ 85質量%,1質量%以下的不可避免雜質所構成之合金’或者 含鉻15質量%以上、鎳〇. 01〜85質量%、鉬〇. 〇1~質量%’ 1質量%以下的不可避免雜質所構成之合金,膜庳5〜37nm, 或膜厚5nm以上且與金屬層b合計在4〇nm以下。 第5發明係於第1發明至第3發明中任一項所述的印刷佈 線基板中,上述化學蝕刻液不含錳及氰化物。 第6發明係於第1發明至第3發明中任一項所述的印刷佈 ❹線基板中’上述化學蝕刻液為氣化鐵水溶液或提酸酸性氣化 銅水溶液。 第7發明係於第 .* « q%乐Z發明的印刷佈綵费…,丄 述絕緣樹月日膜A係選自聚酿亞胺系膜、聚酿胺系膝、聚醋系In the case of a fragile layer such as CuO or Cu2, it is very weak. Therefore, in order to maintain the adhesion strength to the copper film layer required for the printed wiring board, the insulating metal film and the copper coating layer are provided as a base metal layer. Nickel-chromium alloy layer (refer to Patent Document 3). Thereafter, a laminate comprising a base metal layer and a copper coating layer is used as the metal film. The wiring pattern of the two-layer resin film metal film laminate substrate can be formed by a subtractive process. This subtraction method refers to a method of manufacturing a printed wiring board by removing a portion of the metal film of the resin film metal film laminate substrate without using a chemical etching treatment. The chemical surrogate treatment consists of washing with an undesired metal film using a chemical surname and washing with a chemical etching solution. In the chemical etching process, a chemical etching solution or water is generally used in a shower method. The nozzle is sprayed or immersed in a chemical remnant or the like. The chemical etching liquid corresponding to the etching of the copper coating layer is, for example, a solution of a vaporized iron (FeCl3.2H2〇) aqueous solution, a hydrochloric acid acidified copper (CuCl2.2H2〇) water 098117258 4 201006337, and a chemical etching using the substance. Processing can form conductor wiring. k In the chemical silver engraving method using these chemical rhyme solutions, as the underlying metal layer, when a nickel-chromium alloy having a high chromium content is used from the viewpoint of corrosion resistance, chemical etching cannot be sufficiently performed at the edge of the conductor wiring. The underlying metal layer remains between the conductor wirings, and a metal residue which is a residue of the surname is generated, and sufficient etching results may not be obtained. Further, as a problem in terms of insulation reliability, in the index of insulation reliability, a constant temperature and humidity deviation test (hereinafter sometimes referred to as HHBT test: High Temperature High Humidity Bias Test) can be performed. The substrate on which the etching residue was produced or the flexible printed wiring board using the underlying metal layer having a low chromium content clearly showed insufficient insulation reliability in the HHBT test. In other words, when the two-layer resin film metal film-layered substrate having a base metal layer having a high chromium content is subjected to the above-described chemical etching treatment, when the underlying metal ruthenium layer such as a nickel-knot alloy is left as a result of lack of a surname, In the HHBT test, the adjacent conductor wiring has a problem of short-circuiting due to a metal residue composed of a base metal layer component remaining between wirings. On the other hand, in the two-layer resin film metal film laminated substrate having the underlying metal layer having a low chromium content, although no etching residue occurs, the corrosion resistance of the underlying gold-based layer cannot be ensured, so that the HHBT test cannot be ensured. Insulation reliability. Therefore, the opposite characteristics of the etching property and the corrosion resistance of the underlying metal layer are required. Therefore, as one of the means for realizing the insulation reliability, it is necessary to remove the residual (four) residuals between the above-mentioned conductors 098117258 5 201006337, and as a related correction method of the disadvantages, for example, in Patent Document 4, it is proposed that After the chemical treatment of the copper film with the chemical vapor enriched iron solution or the hydrochloric acid acidified copper solution, a type of <2 kinds of acidic _ 彳 过 过 ( 四 四 四The above is processed to dissolve the etching residue between the wirings. Further, in Patent Document 5, it is proposed that the side between the wirings is ruined by using a salt acid and a sulfuric acid, and the mixture is immersed in a mixed liquid of a oxy- oxidized clock and sodium hydroxide. In the patent document 6, it is proposed that the (four) residue between the wirings is treated by using an acidic chemical tobacco material containing a salt acid to sigh H-aged potassium or an over-acid salt (IV) liquid. When an inspective liquid containing potassium ferricyanide or perrhenate is used, the chrome alloy or the chrome-plated alloy of the wiring (4) is removed by a method in which the rhyme of the wiring can be reduced. [Patent Document 1] Japanese Patent Laid-Open No. Hei 8-139448 (Patent Document 3) Japanese Patent Laid-Open Publication No. Hei No. Hei 6-12-63 No. [Patent Document 4] Japanese Patent [Patent Document 5] Japanese Patent No. 3888587 [Patent Document 6] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. However, the recent flexible printed wiring board has a higher density of wiring with a higher density of wiring patterns 098117258 6 201006337, and it is accompanied by high performance, and it is required to use it at a high voltage. As a result, the insulation reliability of the printed wiring board used becomes important, and in order to withstand high voltage, the base metal layer is required to have higher resistance to the surname. Therefore, from the viewpoint of corrosion resistance, it can be seen that the tendency of providing a base layer having a high chromium content of a nickel-chromium alloy is caused by a chemical etching process in which a base metal layer is not left between the conductor wires. There is an increase in enthusiasm. In the case where the conventional two-layer resin film metal film-layered substrate is formed by subtraction to form a conductor wiring pattern, the etching process is performed by using one type of chemical etching solution using a vaporized iron aqueous solution or a hydrochloric acid-acidified copper aqueous solution. The removal of the etching residue and the addition of a new etching treatment step require a new introduction of the equipment, which may cause an increase in equipment cost and liquid management cost, and a decrease in production efficiency due to an increase in steps. The present invention has been made to solve the above problems, and an object thereof is to provide a base metal layer formed on at least one surface of an insulating resin film in the manufacture of a dry plating method and a touch print printing board. When a germanium layer is formed on the underlying metal layer, the printed wiring board having high sidelinity when the conductor wiring is formed and a method for producing the same, specifically, an aqueous solution of ferric chloride or an acid chloride of hydrochloric acid is used to dissolve the water. In the conductor wiring (4), there is little _ residue in the base metal layer component, and when the conductor wiring is raised, the insulation reliability and corrosion resistance are both high. 098117258 7 201006337 (Means for Solving the Problem) The above-mentioned condition was intensively studied by the present inventors, and as a result, it was found that the metal layer B and the metal layer C were laminated without being separated by an adhesive agent on one or both sides of the insulating resin film. The steel coating layer D can realize a printed wiring board which ensures insulation reliability and corrosion resistance. According to a first aspect of the invention, there is provided a printed wiring board which is obtained by chemically removing a resin which is formed by laminating a metal film on at least one surface of an insulating resin film A without interposing an adhesive. The metal film constituting the conductor wiring includes a metal layer B laminated on the surface of the insulating resin film A, and the metal layer B is formed on the surface of the insulating resin film A. The layer b is composed of a recorded or containing 5% by mass of bromine and less than 15% by mass of chrome-based alloy; in the metal layer c of the surface layer of the above-mentioned metal layer B, the metal layer c contains the recorded and chromium-containing 15 An alloy of a mass % or more; and a steel coating layer D having a film thickness of 10 nm to 35/zm in the surface layer of the metal layer c; only the chemical butterfly liquid of the above-mentioned copper film layer D © is used to selectively remove the above In the printed wiring board according to the first aspect of the invention, the conductor wiring of the metal film including the metal layer Β, the metal layer C, and the copper film layer D sequentially laminated is sequentially formed. 'use After the chemical iron solution or the hydrochloric acid acidic copper chloride water-solution is subjected to the chemical remnant treatment, the amount of the gold-based residue remaining on the insulating resin film is measured in the area per unit area of the insulating resin film A. 0. 13 // g/cm2 or less. In the printed wiring board according to the first aspect or the second aspect of the invention, the metal layer B contains hunger 13 mass% or less, titanium § mass% or less, and 锢20 mass% or less, and the balance is recorded or 70% by mass or more of the cancer and less than 15% by mass of the chromium-nickel-chromium alloy and 1% by mass or less of the non-ingredane, and the film thickness is 3 to 20 nm. In the printed circuit board according to any one of the first to third aspects of the present invention, the metal layer C contains chromium in an amount of 15% by mass or more, and nickel 〇. 01 to ❿ 85 mass% and 1 mass% or less. An alloy composed of inevitable impurities, or an alloy containing chromium in an amount of 15% by mass or more, nickel ruthenium, 0.01 to 85% by mass, and molybdenum 〇. 〇1 to 9% by mass of 1% by mass or less of unavoidable impurities. 5 to 37 nm, or a film thickness of 5 nm or more and a total of the metal layer b of 4 Å or less. In the printed wiring board according to any one of the first to third aspects of the invention, the chemical etching liquid does not contain manganese or cyanide. According to a sixth aspect of the invention, in the printed wiring board according to any one of the first to third aspects, the chemical etching liquid is an aqueous solution of an iron oxide or an aqueous solution of acidified acidified copper. The seventh invention is based on the first.* « q% Le Z invented the printing cloth color fee..., the insulating tree moon-day film A is selected from the group consisting of a poly-imine film, a polyamine-based knee, and a polyester system.

膜、聚四氟乙歸系膜、聚笨硫㈣膜、聚萘一 f酸匕二醋系 膜第=物系膜之至少1種以上的樹脂I 種印刷佈線基板之製造方法,孫藉由化學钱 X 猶去不介隔接著劑而將金屬膜積yf在絕緣樹脂 098117258 9 201006337 膜A的至少-個表面上所成的樹_金屬_層基板之上 述金屬膜的不需要部分,而形成導體佈線者,其特徵在於 上述樹脂膜金屬膜積層基板係以下述方式形成:在上述絶’ 樹脂膜A的表面上’採用乾式鍍敷法形成鎳或以鎳作為主緣 分的金屬層B,_,在上述金屬層B的表面,採用乾式成 敷法形成以含15質量%以上祕及錄而成的合金、或:= 質量%以上的鉻、鎳及㈣成的合金所構成的金屬層c後15 在上述金屬層C的表面形成由膜厚1()111〇〜35扉的銅被媒屬 D積層而成之金屬膜,將上述金屬膜_ 1種_液進行进 擇性地除去,形成導體佈線。 選 第9發明係於第8發明的印刷佈線基板之製造方法中 述化學蝕刻液不含錳及氰化物。 上 第10發明係於第8發明的印刷佈線基板之製造方 上=1=為氣⑽水溶料㈣紐銅水溶液。 “發明係於第8發明的印刷佈線基板 上述銅被膜層D係於以乾讀數^法中’ 電鍍法而形成铜層。 去形成的銅層表面上,採用 之製造方法巾a第8發明或第11發明所述的印刷佈線基板 子鍍法之任-種。述乾式紐法為真空紐法、雜法或離 (發明效果) 098117258Method for producing at least one type of resin of a film, a polytetrafluoroethylene film, a polystyrene (tetra) film, a polynaphthalene-f-acid bismuth film, or a resin film, a method for producing a printed wiring board, The chemical money X is formed without interposing the metal film yf on the at least one surface of the insulating resin 098117258 9 201006337 on the at least one surface of the film A to form an unnecessary portion of the above metal film of the substrate. The conductor wiring member is characterized in that the resin film metal film laminated substrate is formed by forming a nickel layer or a metal layer B having nickel as a main edge on the surface of the above-mentioned resin film A by using dry plating. On the surface of the metal layer B, a metal layer composed of an alloy containing 15% by mass or more, or an alloy of chromium, nickel, and (tetra) having a mass % or more is formed by a dry forming method. After the second metal film of the film thickness 1 () 111 〇 to 35 积 is deposited on the surface of the metal layer C, the metal film _ 1 type liquid is selectively removed. A conductor wiring is formed. According to a ninth aspect of the invention, in the method of manufacturing a printed wiring board according to the eighth aspect of the invention, the chemical etching solution does not contain manganese or cyanide. The above 10th invention is based on the manufacture of the printed wiring board of the eighth invention = 1 = gas (10) water-soluble (four) copper-copper aqueous solution. "Invention, in the printed wiring board of the eighth invention, the copper film layer D is formed by a plating method in a dry reading method to form a copper layer. On the surface of the copper layer to be formed, the manufacturing method of the eighth invention or The printed wiring board sub-plating method according to the eleventh aspect of the invention is the vacuum method, the vacuum method, the hybrid method or the separation effect (invention effect) 098117258

P刷伟線基板係錢軸脂膜A與銅被膜層D 201006337 之間配置含絡15質量%以上的 蝕性,同時,在纟s 、,因而具有優良的耐 •量未们5 ^ 與金屬層C之間配置包含絡含 • ‘ #量_合金的金屬層B,藉此,金屬膜可换田 種化學㈣丨液無_地除去,可大 1 緣可靠性,其工業利用價值極高。心刷佈線基板的絕 【實施方式] =:刷佈線基板是在2層樹脂膜金屬 (以下稱作樹脂膜金屬膜積層基板)上 半加成法所進行的加工而製造。 採用減去法或 •樹脂膜金屬膜積層基板 本發明的印刷佈線基板中使用的樹脂膜金屬膜積層體係 在絕緣樹脂膜A的至少^面上’不介隔接著劑地形成依序 積層有金屬層B、金屬層c及銅被膜層D的金屬膜。 ❹ 圖1表示本發日㈣印刷佈線基板中使用之樹賴金屬膜 積層體的斷面。金騎B及金屬層c係相當於2層樹脂膜金 屬膜積層基板的基底金屬層。又,該樹賴金屬膜積層體係 絕緣樹賴A與各金屬層積層而成,由於不存在接著劑層, 故相當於2層樹脂膜金屬臈積層基板。 以下針對本發明的樹脂膜金屬膜積層基板之各構成要素 加以詳細說明。 (金屬層B) 金屬層B係在絕緣樹賴A的表面上騎隔接著劑地積 098117258 201006337 層’包含含錄或含錦7G 以上、 該金屬層B的鉻含量較佳為H.5質量k #量%的合金。 量%以下。當鉻含量為15質量%以上時,盖下更隹為14質 鐵水溶液或鹽酸酸性氯化銅水溶 ,採用氣化 去金屬層B,*能保持絕緣可靠性。仃的化學麵刻來除 又,金屬層B可含有鈒13質量%以下 鉬20質量%以下。 欽8質量%以下、 :等飢、鈦,的含有,既可將所選擇 金屬層B’也可添加多種元讀添加至 與繼、鈦、_種元素的合金金 上元素的合金。另…是二 與絡及選自飢、欽、銷的1種元素的合金,也可以是包 含鎳、鉻、及選自叙、欽、㈣2種以上元素的合金。 釩、欽、錮的各元素可提高金屬層B的咖性,當為叙 13質«以下、鈦8質量%以下、⑽質量%以下的含量時, 在採用氣化鐵水溶㈣魏酸性氣化銅水賴所進行的蚀The P brushed wire substrate is provided with an opacity of 15% by mass or more between the money film A and the copper film layer D 201006337, and at the same time, it has excellent resistance and quantity. Between the layers C, the metal layer B containing the '# quantity_alloys is arranged, whereby the metal film can be exchanged for chemical chemistry (4) sputum is removed without _, which can be large and reliable, and its industrial utilization value is extremely high. . [Embodiment] The brush wiring board is manufactured by processing a two-layer resin film metal (hereinafter referred to as a resin film metal film laminated substrate) by a half-addition method. The resin film metal film layering system used in the printed wiring board of the present invention is formed on the at least one surface of the insulating resin film A by the absence of an adhesive. A metal film of layer B, metal layer c, and copper film layer D. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross section of a laminated metal film laminate used in a printed wiring board of the present invention. The gold ride B and the metal layer c correspond to the base metal layer of the two-layer resin film metal film laminate substrate. Further, the tree-laid metal film-layered system is formed by laminating the insulating layer A and the respective metal layers, and since there is no adhesive layer, it corresponds to two resin film metal-clad layer substrates. Hereinafter, each constituent element of the resin film metal film laminated substrate of the present invention will be described in detail. (metal layer B) The metal layer B is on the surface of the insulating tree A. It is placed on the surface of the insulating layer 098117258 201006337. The layer 'containing or containing more than 7G, the metal layer B preferably has a chromium content of H.5 mass k. #量% of the alloy. The amount is below %. When the chromium content is 15% by mass or more, the cover is more immersed in a 14-mass aqueous iron solution or a hydrochloric acid acidic copper chloride, and the gasification is used to remove the metal layer B, and the insulation reliability can be maintained. In addition, the metal layer B may contain 13% by mass or less of molybdenum and 20% by mass or less of molybdenum. The content of 8% or less by mass, such as hunger and titanium, may be added to the selected metal layer B' or a plurality of elements to be added to the alloy of the elemental alloys of the titanium, titanium, and _ elements. The other is an alloy of two elements selected from the group consisting of hunger, chin, and pin, and may be an alloy containing nickel, chromium, and two or more elements selected from the group consisting of Syrian, chin, and (iv). Each element of vanadium, chrysanthemum, and yttrium can improve the coffee property of the metal layer B. When it is a content of 13 or less, titanium content of 8 mass% or less, or (10) mass% or less, water vaporization of iron (four) Wei acid gasification is used. Eclipse by copper water

刻步驟中’不會產生金屬層B的殘渣。另外,當金屬層B 的添加π素僅由鈦構成時,在採用氯化鐵水溶液或鹽酸酸性 氣化銅水溶液所進行的蝕刻步驟中,會產生金屬層Β的殘 潰0 如此’金屬層Β中為了提高耐熱性及耐钱性,可以與目的 特性一致地適當添加過渡金屬元素。另外,金屬層Β中除該 098117258 12 201006337 等口金以外’亦可存在有製造目標物時進入等而含有的^ 質量%以下的不可避免的雜質。 金屬層B的形成方法,可採用公知的蒸鍍法、減鑛法、離 子鍍法’制是_法’ 丨起較㈣减成分之合 金發生組成變動而形成,因此較佳。 ❹ ❹ 备金屬層B的膜厚小於3nm時,導體佈線加工時採用氯化 鐵水溶液或鹽酸酸性氯化銅水溶液所進行的化學儀刻中,金 屬層C與金屬層B均未被溶解而殘留在導體佈線間。其理由 可以認為是由於金屬層B未以完整膜型式形成,局部在絕緣 樹脂膜A上直接形成金屬層c,或金屬層c與金屬層b 一起 溶解的現象不易發生,而當考慮導體佈線加工 時,金屬層B儘可能薄為宜。當膜厚大於2〇mQ,對導體佈 線施加電壓時,金屬層B的成分逐漸溶出,易成為路 的原因。 不良 另外,金屬層Β的膜厚可從形成條件推定,例如, ☆ 用濺鑛法時’根據向麟陰極投人的電力及_時間== 條件’膜厚係、呈直線變化,可從條件求出金㈣1 (金屬層C) β的膜厚。 金屬層C係在絕緣樹脂膜a上的金屬層β的矣 接著劑而形成。 面,不介隔 金屬層C是以鎳與鉻作為主成分的合金, 15暫畺G/Hi 、絡含量未滿 098117258 買重時,佈線加工後的耐蝕性不能充分保持,由於金屬 13 201006337 層c或銅的溶出而使絕緣可靠性降低。另一方面者鉻人θ 大於70質量%時,鉻有可能在晶粒邊界析出,較3量 外,當金騎C僅由Cr構成時,由於會因鹽酸而溶解^ 致耐酸性降低’所以若麟則步驟及職步驟,會造成《 緣可靠性之下降,故較佳為15〜7〇質量%。 浥 以 另外’金屬層G的鎳含量,在確保鉻含量之前提下 0· 01〜85質量%為宜。 另外’在金屬層C中亦可含〇1〜4〇質量%之翻。 當然係將錄、鉻及不可避免的雜f的含量加起來調整至 質量%。 顧也具有提高耐錄的效果,當翻含量超過40質量%時, 财熱剝離有極端降低的傾向,是不佳的。 當金屬層C的膜厚未滿5nm日夺,不能確保對銅的阻隔性, 絕緣可靠性降低。又,當金屬層B與金屬層c的合計膜厚大 於4〇咖時,朗應力變高,產生細狀及㈣,密合強度 可能降低’金屬層B與金屬層c的合計膜厚較佳為4〇⑽ 以下。 另外,金屬層C的膜厚,可從形成條件求出,例如,已知 採用濺鍍法時’根據向_陰極施加的電力、賴時間等條 件’膜厚呈直線變化,能夠從該條件求出膜厚。 (銅被膜層D) 其次’鋼被膜層D在形成較薄的銅被膜層之情況係採用乾 098117258 201006337 式鍍敷法形成。另-方面,也可在採用乾式鍵敷法形成薄的 -銅被膜層後’在該薄的銅被膜層上採用濕式鑛敷法,積層較 具厚度的銅被膜層而形成。 該銅被膜層的膜厚較佳為10腿〜35_的厚度,當膜厚未 滿lOmn,钸線部的導電性易產生問題,或有可能出現強度 上的問題。另一方面,若膜厚超過35//ιη而變厚,會有產生 細裂紋及翹曲等而使密合強度降低之情況,是不佳的。 ® 採用乾式鍍敷法形成銅被膜層後,在該銅被膜層上採用濕 式鍍敷法積層較厚的鋼被膜層而形成時,可以採用乾式鍍敷 法形成膜厚l〇nm〜1//Π!左右的銅被膜層後,採用濕式鍍敷 法進行積層,直到成為所希望膜厚的銅被膜層或導體佈線。 (絕緣樹脂膜) 絕緣樹脂膜係選自聚醯亞胺系膜、聚醢胺系膜、聚對苯二 甲酸乙二酿(PET)及聚萘二甲酸乙二酯等聚酯系膜、聚四 參敦乙烯系膜、聚苯硫驗系膜、聚萘二曱酸乙二醋系膜或液晶 聚合物系膜的絕緣樹脂膜,可考慮耐熱性、介電體特性、電 、、色緣性及印刷佈線基板的製造步驟及後續步驟的耐藥品性 等,根據用途適當選擇。 例如’聚酿亞胺系膜係有東麗.Dupont (股)製之Kapton (*主冊商標)、宇部興產(股)製之UPILEX (註册商標)、 鐘淵化學工業(股)製之APICAL (註冊商標)、東洋紡(股) 製之ΧΕΝ0 (註册商標)等。另外,作為屬於芳香族聚醯胺 098117258 15 201006337 系膜的芳醯胺系膜,有東麗(股)製之Mictr〇n(註冊商 帝人Advanced Fihn (股)製之紅⑽如(註冊商標)^、 另外,本發明的印刷佈線基板,除了於絕緣樹腊膜A的單 面上形成有導體佈_印刷佈線基板外,也可以採用在絕緣 樹脂膜A的兩Φ上形成轉__印刷佈線基板。另外, 也可積層多個本發_印刷佈線基板,用作多層印刷佈線基 板。In the engraving step, the residue of the metal layer B is not generated. In addition, when the addition of π of the metal layer B is composed only of titanium, in the etching step by using an aqueous solution of ferric chloride or an aqueous solution of an acidified copper oxide of hydrochloric acid, a ruthenium of the metal layer 0 is generated. In order to improve heat resistance and wear resistance, a transition metal element may be appropriately added in accordance with the target characteristics. In addition, in the case of the metal layer, in addition to the gold such as 098,117, 258, and 12,063,063, the unavoidable impurities may be contained in the amount of 5% by mass or less which is contained in the metal layer. The method for forming the metal layer B is preferably carried out by using a known vapor deposition method, a reduced ore plating method, or an ion plating method, which is formed by changing the composition of the alloy of the (4) minus component. ❹ When the film thickness of the metal layer B is less than 3 nm, the metal layer C and the metal layer B are not dissolved and remain in the chemical etching process using the ferric chloride aqueous solution or the hydrochloric acid acidic copper chloride aqueous solution during the conductor wiring processing. Between conductor wiring. The reason for this is considered to be that since the metal layer B is not formed in a complete film type, the metal layer c is partially formed directly on the insulating resin film A, or the metal layer c is dissolved together with the metal layer b, and the conductor wiring processing is considered. When the metal layer B is as thin as possible. When the film thickness is more than 2 〇 mQ, when a voltage is applied to the conductor wiring, the composition of the metal layer B gradually dissolves, which tends to be a cause of the road. In addition, the film thickness of the metal layer 推 can be estimated from the formation conditions. For example, ☆ When the sputtering method is used, the film thickness is changed according to the power supplied to the lining cathode and the _ time == condition. The film thickness of gold (four) 1 (metal layer C) β was determined. The metal layer C is formed by a ruthenium of the metal layer β on the insulating resin film a. No, the metal layer C is an alloy containing nickel and chromium as the main component. When the weight is less than G/Hi and the content of the complex is less than 098117258, the corrosion resistance after wiring processing cannot be fully maintained due to the metal 13 201006337 layer. The dissolution of c or copper reduces the insulation reliability. On the other hand, when the chrome θ is more than 70% by mass, chromium may precipitate at the grain boundary, and when the gold ride C is composed only of Cr, the acid resistance is lowered due to the dissolution of hydrochloric acid. If Ruolin has steps and steps, it will cause a decrease in the reliability of the edge, so it is preferably 15 to 7 mass%.浥 In addition, the nickel content of the metal layer G is preferably 0.1 to 8 mass% before the chromium content is ensured. Further, the metal layer C may also contain 〇1 to 4% by mass. Of course, the content of the recorded, chromium and unavoidable mis-f is added to the mass%. Gu also has an effect of improving the recording resistance. When the tumbling content exceeds 40% by mass, the peeling of the heat is extremely lowered, which is not preferable. When the film thickness of the metal layer C is less than 5 nm, the barrier property against copper cannot be ensured, and the insulation reliability is lowered. Further, when the total film thickness of the metal layer B and the metal layer c is larger than 4 Å, the Lang stress becomes high, and fineness and (4) are generated, and the adhesion strength may be lowered. 'The total film thickness of the metal layer B and the metal layer c is preferably small. It is 4〇(10) or less. In addition, the film thickness of the metal layer C can be determined from the formation conditions. For example, when the sputtering method is used, it is known that the film thickness changes linearly according to conditions such as electric power applied to the cathode, time elapsed, and the like. The film is thick. (Copper film layer D) Next, the case where the steel film layer D is formed into a thin copper film layer is formed by a dry plating method of 098117258 201006337. Alternatively, a thin copper-coated film layer may be formed by a dry bond method, and a thin copper film layer may be formed by a wet ore coating method on the thin copper film layer. The film thickness of the copper film layer is preferably from 10 legs to 35 mm. When the film thickness is less than 10 nm, the conductivity of the twisted portion is liable to cause a problem, or there may be a problem of strength. On the other hand, when the film thickness exceeds 35//m, it becomes thick, and fine cracks, warpage, and the like may occur to lower the adhesion strength, which is not preferable. ® After forming a copper film layer by dry plating, when a thick steel film layer is formed by wet plating on the copper film layer, the film thickness can be formed by dry plating. /Π! After the copper film layer on the left and right sides, the layer is laminated by wet plating until it becomes a copper film layer or conductor wiring of a desired film thickness. (Insulating Resin Film) The insulating resin film is selected from the group consisting of a polyimide film, a polyamide film, a polyethylene terephthalate (PET), and a polyethylene naphthalate. Insulation resin film of Sishendan ethylene film, polyphenylene sulfide film, polyethylene naphthalate film or liquid crystal polymer film, heat resistance, dielectric properties, electricity, color edge can be considered The properties and the manufacturing steps of the printed wiring board and the chemical resistance of the subsequent steps are appropriately selected depending on the application. For example, 'the poly-imide film system is Kapton (* main volume trademark) manufactured by Toray Dupont Co., Ltd., UPILEX (registered trademark) manufactured by Ube Industries Co., Ltd., and Zhongyuan Chemical Industry Co., Ltd. APICAL (registered trademark), 东0 (registered trademark) of Toyobo Co., Ltd., etc. In addition, as the arylamine film which is a film of the aromatic polyamine 098117258 15 201006337, there is a Mictr〇n made by Toray (a registered company Teijin Advanced Fihn (10) such as (registered trademark) In addition, in the printed wiring board of the present invention, in addition to the conductive cloth-printed wiring board formed on one surface of the insulating resin film A, it is also possible to form a turn-on printed wiring on both Φ of the insulating resin film A. In addition, a plurality of local-printed wiring boards may be laminated and used as a multilayer printed wiring board.

(金屬的殘渣量) 其次’對絕緣樹脂膜A上殘留的金屬殘渔量進行說明。 如佈線間殘留包含金屬原子的層,在贿試驗中,會成 為伴隨著料間的㈣短路,並使絕緣可靠性大幅降低的原 因。已知亦有偏向局部殘留的部m賴顏的全部表 面由1層金屬原子覆蓋時的金屬殘渣量,係相當於約〇15 "g/cm2 ° ❹ 在此’為了瞭解鎳-鉻合金中的鉻含量與絕緣樹脂膜上的 殘渣量的關係’求出在經預先乾騎去水分的絕緣樹脂膜 (聚醯亞胺膜)上利㈣鍍形成銻—鉻合金(相當於金屬層 B或金屬層〇,接著把採用魏及電鑛而形成有銅被膜層的 基板,用氯化鐵溶液進行飿刻,此時的錄―鉻合金中的絡濃 度與聚醯亞胺膜上殘留的鎳—鉻合金層的成分的合計亦即 與餘刻殘渣量合計的_4结果示於圖2。 在圖2中,右鉻含量為15質量%,當對絕緣樹脂膜的蝕刻 098117258 16 201006337 雜量多時,絕緣樹脂膜每W為〇.15心^,該值係 如上所述’相當於絕緣樹脂膜的全部表面被包含1層的金屬 原子覆蓋的量’實際上’亦有偏向局部殘留的部分,若在佈 線間殘留包含金屬原子的層,在刪了試驗中,隨著佈線間 的經時短路’會使絕緣可靠性大幅降低。 9 特別疋為了形成數十_節距的高精細饰線,要求把不需 要。I5刀的金屬㈣贿去,若將崎樹賴的表面上形成有 ί錄间的鉻3量15質量%以上的金屬膜之樹脂膜金屬膜 積層基板使用氣化鐵水溶液進行化學钱刻處理而加工成印 刷佈線基板雖除去不需要的金屬_使絕緣細旨膜Α之表 面目視上為露出’但由於佈線間殘留1層以上金屬的原子 層’故無法得到充分的絕緣可靠性。 反之田絕緣樹脂膜的表面上設置絡含量未滿15質量% 的金屬層’並錢金屬層上設置鉻含〇的金屬層時,即使 吏用作為#刻_化學㈣液之氣化鐵水溶液或鹽酸酸 、氯化銅水☆液,也可以利用化學編彳處理而除去不需要部 人旦3量夕的金屬層。相反地’當在絕緣樹脂膜上設置絡 3里15質量%以上的金屬層,並在該金屬層上設置絡含量少 屬層時Μ使用氣化鐵水溶液或鹽酸酸性氯化銅水溶 二不月b除去不需要部分的鉻含量為15質量%以上的金屬 不使用過疑酸卸或鐵氰化钟等含 化學钱 時則、除去困難。 098117258 17 201006337 為此’本發明的印刷佈線基板中,將包含金屬層 層C及銅制層D的積層的導體佈線❹鐵水溶液屬 制後在絕緣樹脂膜A上殘留的金 丁 :單位_為。.13一下、更 另外,若除去積層有金屬層B、金屬層c 導體佈線,絕緣樹脂膜A的表面露出,同__致^的 殘淺也呈現在絕緣樹脂膜八的表面。藉由 其 屬 7脂膜A上殘留的金屬量,可以求心= 渣量,因此,可以推定絕緣可靠性。 戈 定絕緣樹脂膜A上殘留的金屬殘渣量係用下列方法進行測 將印難線練㈣_線錢_切料鹽 亂化銅水驗猜鮮刻處㈣除衫需㈣部分’ 緣樹脂膜A的表面露出,根據需要進行洗淨或後處理其 次,將經除去導體佈線的印刷佈線基板的表層部亦即露出 的絕緣樹脂膜A之表層部上所殘留的金屬成分溶解,得 留金屬成分的溶解液。 在該殘留金屬成分的溶解中採用酸,但在金屬*定量# 析時,不能使用含有妨礙檢測光譜的成分的酸。例如,為= 容易溶解 Ni、Cu、Mo、Ta、Ti、V、Cr、L η f e ' L〇等殘留金屬, 鹽酸是有效的,但鹽酸的Cl檢測光譜,有可萨妨礙上述金 098117258 18 201006337 屬成分的微小的檢測光譜,因此是不佳的。另外,硝酸雖不 妨礙上述檢測光譜,但以顧溶解後,在絕緣膜側易發生金 屬成分的殘留,作為溶解液是不適合的。 因此’本發明中,為了钮刻後的絕緣樹脂膜的表層部中殘 留之金屬成分的溶解,係使用韻7G〜駕與過氧化氯1〇 〜30%所構成的溶液’制微波分解裝置進行溶解處理。利 用該方法’定量分析時不妨礙檢測光譜,並且可完全溶解絕 ❿緣膜上殘留的全部金屬成分。 、 另外,藉由採用該微波分解裝置,係與採用熱板等進行間 接加熱時不同’由於以微波直接加熱密閉容器内的酸,故向 Μ為漏的熱> ’且來自外部的污染也變少。因此,殘留金 屬成刀可在短時間内以少量酸分解,故試料的分解及測定時 間約5〜6小時左右,可極快地進行評估。 將如轉_轉㈣金屬成分料定量純。作為分析 方法並未_限定,採用可定量微量金屬成分的介電結合電 4離子源質量分析裝置(下面有時稱作似—⑹為佳。 (化學蝕刻液) 與本發月中使用的化學姓刻液係對銅被膜層進行餘刻的化 子姓刻液縣為氯化鐵水純或舰雜㈣銅水溶液之 任種的化學餘刻液。氯化鐵水溶液或鹽酸酸性氯化銅水溶 系字銅氧化進行侧,同時,在本發明的金屬膜的積層結 構中除去金屬層Β及金屬層C。 098117258 19 201006337 一般’就耐蝕性的觀點而言’於將在絕緣樹脂膜的表面上 設置有鉻含量高的鎳一鉻合金的基底金屬層(本發明中的金 屬層c)的樹脂膜金屬膜積層體,使用對銅被膜層進行蝕刻 的氣化鐵水溶液或鹽酸酸性氯化銅水溶液進行化學餘刻處 理而製造印刷佈線基板時’由於基底金屬層的不需要部分未 完全蚀刻除去而殘留,有時成為蝕刻所致的金屬殘渣。 特別是當基底金屬層的鉻含量在15質量%以上時,有時可 顯著看到蝕刻所致的金屬殘渣的產生,離絕緣樹脂膜表面以 0. 1〜數nm之厚度殘留著基底金屬層成分,為了將其除去, 必須採用能溶解該金屬殘渣的鐵氰化钾水溶液或驗性過鍾 酸鹽水溶液等的溶解處理。又,基底金屬層亦有採用氣化鐵 水溶液使其鈍化之情況,此種基底金屬層的鈍化係成為蝕刻 中的金屬殘渣’也成為絕緣可靠性降低的原因。 另一方面,本發明的印刷佈線基板係於絕緣樹脂膜A的表 面依序設置金屬層B、金屬層C、銅被膜層D的積層結構, 含鉻15質量%以上的金屬層c設置在絕緣樹脂膜4與銅被膜 層D之間,在金屬層c與絕緣樹脂膜A之間,由於介隔著以 蝕刻銅被膜層D的化學蝕刻液進行蝕刻的含鉻未滿15質量% 的金屬層B ’故僅以對應於銅被膜層D的化學蝕刻液(例如 氯化鐵水溶液或鹽酸酸性氣化銅水溶液)進行化學蝕刻處 理,也可以除去含金屬層c之金屬膜的不需要部分。 在該絕緣樹脂膜A的表面所設置之金屬膜,由於是按金屬 098117258 20 201006337 * 層B、金屬層c、銅被膜層D的順序設置的積層結構,故即 • 使不探用鐵氰化鉀水溶液或鹼性過錳酸鹽水溶液進行化學 蝕刻處理,仍可除去金屬層B、金屬層C、鋼被膜層D,其 理由雖然不明’但當將絕緣樹脂膜A的表面積層的順序改變 成=金屬層C、金屬層B、銅被膜屬D之情況,採用氯化鐵 水溶液或鹽酸酸性氯化銅水溶液進行化學蝕刻處理時,會產 生金屬層C成分的金屬殘渣。 ❿(2)印刷佈線基板之製造方法 其次,對本發明的印刷佈線基板之製造方法進行詳細說 m ° ° 樹脂膜金屬膜積層基板係藉_用減去法或半加成法的 製迨印刷佈線基板。即,該樹脂膜金屬膜積層基板表 面的匕3銅被媒層D、金屬層c及金屬層B的金屬膜,其不 參需要部分係採用化學钱刻等加以除去,形成導體佈線。 ’ 、士擦用減去法製造本發明的印刷饰線基板之情況 進盯說明1所謂減去法係指將樹脂膜金屬膜積層基板的金屬 膜不需要# >利用化學侧處理等加以除去,以製造印刷佈 線基板的製造方法。 本發月的印刷佈線基板係在樹脂膜金屬膜積層基板的金 屬膜中作為導體饰線而殘留處的表面,設置抗㈣。即,抗 钱劑=為佈線圖案的形狀。然後,經過採用與銅被膜層對應 的化干之化學侧處理、水洗,轉性地除去金屬膜 098117258 21 201006337 的不需要部分’形成導體佈線。 »亥選擇性地除去係可採用蝕刻銅被膜層的化學融刻液的 僅1種化學蝕刻液來對金屬膜進行化學蝕刻處理,故不需新 . 增加蝕刻處理步驟,不必重新引進設備,沒有設備成本、液 - 體管理成本及工作時間的增加。 另外,抗蝕劑可採用公知的抗蝕劑,對化學蝕刻液具有耐 受性’且%成佈線後可除去即可。抗钱劑如果是在銅被膜層 D的表面用絲網印刷形成’或用照射紫外線等而硬化的感光魯 性抗蝕劑即可,硬化成規定形狀等加以配置。 在本發明中’採用對銅被膜層進行蝕刻的氣化鐵水溶液或 鹽酸酸性氣化銅水溶液的任—種化學働彳液的僅__種進行 金屬膜則彳’除去不需要的部分。氯化鐵水溶液或鹽酸酸性 氯化銅水溶㈣將銅氧化進行則,同時在本發明的金屬膜 的積層結構中’也具有除去金屬層B及金屬層C的作用。 如此’化學蝕刻液不採用過錳酸鉀水溶液等過錳酸鹽水溶❹ 液或鐵氰化料氰化物’故在侧步職也不必除去猛,由 於化學蚀刻液中不含結及氰化物,故在實施金鍵敷步驟前的 印刷佈線基板中不含猛及氰化物,即使實施金鍍敷的印刷佈 線基板也不含有链。 另外’不含錳及氰化物是指作為不可避免雜質的錳及氰化 物被排除在外。 又’本發明的印刷佈線基板係不採用與金屬層C的钱刻對 098117258 22 201006337 應的化學蝕刻液進行化學蝕刻處理。與金屬層c對應的化學 蝕刻液中,鹼性過錳酸鹽水溶液會除去絕緣樹脂膜A的表 層,但由於不採用鹼性過錳酸鹽水溶液,即使金屬層c被除 去,絕緣樹脂膜的表面仍未被除去。亦即,已知若將包含金 屬層B、金屬層C及銅被膜層D的導體佈、線採用氣化鐵水溶 液予以除去’將露出的絕緣樹脂膜A的表面的凹凸採用光學 輪廓加工機(optical叩0衍161*)進行測定,在測定界限以下 參是平滑的。這意指露出的絕緣樹脂膜A的表面不能被化學飯 刻液所溶解。 形成導體佈線後的導體佈線表面上所生成的氧化物膜之 除去’可採用公知的微⑽法’又,形成印刷佈線基板的導 體佈線後,採用銅被膜對應的化學蝕刻液以外的化學蝕刻 液,可通過下列步驟適當選擇。(Amount of Residue of Metal) Next, the amount of residual metal remaining on the insulating resin film A will be described. If a layer containing metal atoms remains in the wiring, it will become a cause of a short circuit between the materials and a large reduction in insulation reliability. It is also known that the amount of metal residue when the entire surface of the portion which is partially biased is covered by one layer of metal atoms is equivalent to about 15 "g/cm2 ° ❹ Here, in order to understand the nickel-chromium alloy The relationship between the chromium content and the amount of residue on the insulating resin film is determined by forming a bismuth-chromium alloy (corresponding to the metal layer B or the insulating resin film (polyimine film)) The metal layer is ruthenium, and then the substrate formed with the copper film layer by using Wei and the electric ore is etched with a ferric chloride solution. At this time, the complex concentration in the chromium alloy and the nickel remaining on the polyimide film are - The total of the components of the chromium alloy layer, that is, the total of the residual residue amount is shown in Fig. 2. In Fig. 2, the right chromium content is 15% by mass, when the insulating resin film is etched 098117258 16 201006337 For a long period of time, the insulating resin film is 〇.15 core per W, and the value is as described above. 'The amount corresponding to the entire surface of the insulating resin film covered with one layer of metal atoms' is actually partially biased. In part, if a layer containing metal atoms remains between wirings, In the test, with the short-circuit between the wires, the insulation reliability is greatly reduced. 9 In particular, in order to form a high-precision trim line of several tens of pitches, it is required to bribe the metal of the I5 knife. A resin film metal film laminated substrate in which a metal film having a chromium content of 15% by mass or more is formed on the surface of the shovel, and a chemical vapor etching treatment is performed using a vaporized iron aqueous solution to form a printed wiring board. The required metal _ makes the surface of the insulating film is visually exposed 'but the atomic layer of one or more metals remains between the wires', so that sufficient insulation reliability cannot be obtained. On the contrary, the surface content of the insulating resin film is set. When a metal layer of less than 15% by mass is provided on the metal layer of the valence metal layer, even if it is used as a gasified iron solution or hydrochloric acid or copper chloride water ☆ solution of #刻_化学(四)液, It is possible to remove the metal layer which is not required to be used in the chemical etching process. Conversely, when a metal layer of 15 mass% or more in the network 3 is provided on the insulating resin film, a complex content is set on the metal layer. When the genus layer is used, the aqueous solution of iron-hydride or hydrochloric acid is used to dissolve the copper chloride, and the unnecessary portion of the metal having a chromium content of 15% by mass or more is not used. 098 117 117 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 D: The unit _ is .13, and further, if the conductor layer of the metal layer B and the metal layer c is removed, the surface of the insulating resin film A is exposed, and the residual light of the __^ is also present in the insulating resin film. By the amount of metal remaining on the lipid film A of the genus, it is possible to find the amount of slag, and therefore, the insulation reliability can be estimated. The amount of residual metal residue on the gelatin insulating resin film A is measured by the following method: (4) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The surface of A is exposed, and if necessary, the metal component remaining on the surface layer portion of the exposed insulating resin film A, which is the surface layer portion of the printed wiring board from which the conductor wiring is removed, is removed, and the metal component remains. Dissolved solution. An acid is used for the dissolution of the residual metal component, but in the case of metal* quantification, an acid containing a component that hinders the detection spectrum cannot be used. For example, if it is easy to dissolve residual metals such as Ni, Cu, Mo, Ta, Ti, V, Cr, L η fe ' L〇, hydrochloric acid is effective, but the Cl detection spectrum of hydrochloric acid has a hindrance to the above gold 098117258 18 201006337 The tiny detection spectrum of the genus component is therefore not good. Further, although nitric acid does not interfere with the above-mentioned detection spectrum, it is not suitable for the solution to be left on the side of the insulating film after dissolution. Therefore, in the present invention, in order to dissolve the metal component remaining in the surface layer portion of the insulating resin film after the buttoning, a solution of a solution of a rhyme 7G and a peroxide solution of 1% to 30% of chlorine peroxide is used. Dissolution treatment. By this method, quantitative analysis does not hinder the detection of the spectrum, and all the metal components remaining on the insulating film can be completely dissolved. In addition, by using the microwave decomposing device, it is different from indirect heating by a hot plate or the like. "Because the acid in the sealed container is directly heated by the microwave, the heat is leaked to the &" and the contamination from the outside is also Fewer. Therefore, the residual metal forming knife can be decomposed with a small amount of acid in a short time, so that the decomposition and measurement time of the sample is about 5 to 6 hours, and the evaluation can be performed extremely quickly. The metal component such as the turn-to-turn (four) material is quantitatively pure. As an analytical method, it is not limited to use a dielectric-bonded electric 4 ion source mass spectrometer capable of quantifying trace amounts of metal components (hereinafter sometimes referred to as -(6) is preferred. (Chemical etching solution) and the chemical used in this month. The surname of the engraved liquid is the chemical remnant of any kind of ferric chloride or pure (four) copper aqueous solution. The ferric chloride aqueous solution or the hydrochloric acid acidic copper chloride is dissolved in water. The copper is oxidized to the side, and at the same time, the metal layer Β and the metal layer C are removed in the laminated structure of the metal film of the present invention. 098117258 19 201006337 Generally, 'on the viewpoint of corrosion resistance, 'will be on the surface of the insulating resin film A resin film metal film laminate provided with a base metal layer of a nickel-chromium alloy having a high chromium content (metal layer c in the present invention), an aqueous solution of an iron oxide or an aqueous solution of an acidic copper chloride solution for etching a copper coating layer is used. When the printed wiring board is manufactured by chemical refining, 'the unnecessary portion of the underlying metal layer remains unetched and remains, and may become a metal residue due to etching. Especially when the substrate is used. When the chromium content of the metal layer is 15% by mass or more, the metal residue due to etching may be significantly observed, and the underlying metal layer component remains in the thickness of 0.1 to several nm from the surface of the insulating resin film. For the removal, it is necessary to use a solution of a potassium ferricyanide aqueous solution or an aqueous solution of an aqueous solution of an acid anhydride which can dissolve the metal residue. Further, the base metal layer is also passivated by using an aqueous solution of iron oxide. The passivation of the metal layer is a cause of a decrease in the insulation reliability of the metal residue in the etching. On the other hand, the printed wiring board of the present invention is provided with the metal layer B and the metal layer C in this order on the surface of the insulating resin film A. The laminated structure of the copper coating layer D, the metal layer c containing 15% by mass or more of chromium is provided between the insulating resin film 4 and the copper coating layer D, and is interposed between the metal layer c and the insulating resin film A by etching. The chemical etching solution of the copper coating layer D is etched with a chromium-containing metal layer B of less than 15% by mass. Therefore, only the chemical etching liquid corresponding to the copper coating layer D (for example, an aqueous solution of ferric chloride or acidified copper of hydrochloric acid) is used. The solution is subjected to a chemical etching treatment, and an unnecessary portion of the metal film containing the metal layer c may be removed. The metal film provided on the surface of the insulating resin film A is made of metal 098117258 20 201006337 * layer B, metal layer c The laminated structure of the copper film layer D is arranged in order, so that the metal layer B, the metal layer C, and the steel film can be removed without chemical etching treatment using an aqueous solution of potassium ferricyanide or an aqueous solution of alkaline permanganate. The reason for the layer D is unknown. However, when the order of the surface layer of the insulating resin film A is changed to = metal layer C, metal layer B, or copper film group D, an aqueous solution of ferric chloride or an aqueous solution of acidic copper chloride is used. When the chemical etching treatment is performed, the metal residue of the metal layer C component is generated. (2) Manufacturing method of printed wiring board Next, the manufacturing method of the printed wiring board of the present invention is described in detail. m ° ° Resin film metal film laminated substrate system The printed wiring board is manufactured by subtractive or semi-additive. In other words, the metal film of the 匕3 copper-based dielectric layer D, the metal layer c, and the metal layer B on the surface of the resin film-metallized substrate is removed by chemical etching or the like to form a conductor wiring. In the case where the printed wiring board of the present invention is produced by the subtraction method, the description of the subtraction method means that the metal film of the resin film metal film laminated substrate is not required to be removed by chemical side treatment or the like. A method of manufacturing a printed wiring board. The printed wiring board of this month is a surface which remains as a conductor wire in the metal film of the resin film metal film laminated substrate, and is provided with an anti-fourth. That is, the anti-money agent = the shape of the wiring pattern. Then, after the chemical side treatment and water washing using the drying corresponding to the copper coating layer, the unnecessary portion of the metal film 098117258 21 201006337 is rotationally removed to form a conductor wiring. Selectively removes only one chemical etching solution that etches the copper film layer to chemically etch the metal film, so no new one is needed. The etching process step is added, and it is not necessary to reintroduce the device. Equipment costs, liquid-body management costs, and increased working hours. Further, the resist may be a known resist, and it is resistant to the chemical etching liquid, and % may be removed after wiring. The anti-money agent may be formed by screen printing on the surface of the copper coating layer D or by a photosensitive Lu-resist which is cured by irradiation with ultraviolet rays or the like, and is cured to a predetermined shape or the like. In the present invention, the metal film is used to remove unnecessary portions by any of the chemical sputum solutions of the aqueous solution of the vaporized iron or the aqueous solution of the acidified copper oxide in the copper film. The aqueous solution of ferric chloride or the acidic copper chloride hydrochloride is dissolved in water (iv), and the copper layer is oxidized, and the metal layer B and the metal layer C are removed in the laminated structure of the metal film of the present invention. Thus, the 'chemical etching solution does not use permanganate water-soluble cerium or ferricyanide cyanide such as potassium permanganate aqueous solution', so it is not necessary to remove it in the side step, since the chemical etching solution does not contain knots and cyanide. Therefore, the printed wiring board before the gold bonding step is not contained in the cyanide, and the printed wiring board which is subjected to gold plating does not contain a chain. In addition, manganese and cyanide are excluded as manganese and cyanide which are unavoidable impurities. Further, the printed wiring board of the present invention is not subjected to a chemical etching treatment with a chemical etching solution corresponding to the metal layer C of 098117258 22 201006337. In the chemical etching solution corresponding to the metal layer c, the alkaline permanganate aqueous solution removes the surface layer of the insulating resin film A, but since the alkaline permanganate aqueous solution is not used, even if the metal layer c is removed, the insulating resin film The surface has not been removed. In other words, it is known that the conductor cloth and the wire including the metal layer B, the metal layer C, and the copper film layer D are removed by using an aqueous solution of an iron carbide. The unevenness of the surface of the exposed insulating resin film A is determined by an optical contouring machine ( Optical 叩 0 161 *) was measured, and the parameters were smooth below the measurement limit. This means that the surface of the exposed insulating resin film A cannot be dissolved by the chemical rice liquid. The removal of the oxide film formed on the surface of the conductor wiring after forming the conductor wiring can be performed by a known micro (10) method. After the conductor wiring of the printed wiring board is formed, a chemical etching liquid other than the chemical etching liquid corresponding to the copper film is used. , can be selected by the following steps.

其次,對採用半加成法製造本發明的印刷佈線基板之情況 加以說明。 所謂半加成法係指在樹脂膜金屬膜積層基板的金屬膜表 面,在想要形成佈線的場所使金屬膜附著,在確保作為佈線 的膜厚後,除去絕緣樹脂膜的表面之不需要的金屬膜,以製 造印刷佈線基板的方法。 詳細而言,在樹脂膜金屬膜積層基板的金屬膜表面,在不 希望形成佈線的場所形成抗蝕劑膜,在露出的金屬膜表面上 採用電鍵等形成銅料,以化學_處㈣在除去抗银劑而 098117258 23 201006337 露出的上述金屬膜除去,形成佈線,以製造印刷佈線基板。 在此所用的抗蝕劑只要可耐銅之鍍敷液即可,可以採用任 何公知的抗蝕劑。另外,關於不需要之金屬膜的除去,由於 表面為銅被膜層,故採用與利用銅對應的化學蝕刻液加以除 去之減去法同樣的方法進行。 另外,以上係利用採用可撓性絕緣樹脂膜的可撓性印刷佈 線基板說明本發明,當然,採用環氧樹脂或酚樹脂、Tef (註冊商標)等材料的剛性印刷佈線基板中,也可實施本發 明。 以下’利用實施例說明本發明。 絕緣樹脂膜A係採用膜厚38/zm的聚醯亞胺膜(東麗.Next, a case where the printed wiring board of the present invention is produced by a semi-additive method will be described. The semi-additive method refers to a method of removing the surface of the insulating resin film after securing the film thickness of the wiring on the surface of the metal film of the resin film metal film-clad substrate, where the wiring is to be formed. A metal film for a method of manufacturing a printed wiring board. Specifically, on the surface of the metal film of the resin film metal film-clad substrate, a resist film is formed in a place where wiring is not desired, and a copper material is formed on the surface of the exposed metal film by using an electric key or the like, and is removed by chemical (four) Anti-silver agent and 098117258 23 201006337 The exposed metal film is removed to form a wiring to manufacture a printed wiring board. The resist used herein may be any copper-resistant plating solution, and any known resist may be used. Further, since the removal of the unnecessary metal film is performed on the surface of the copper film layer, it is carried out by the same method as the subtraction method using a chemical etching solution corresponding to copper. In the above, the present invention will be described using a flexible printed wiring board using a flexible insulating resin film. Of course, a rigid printed wiring board made of a material such as an epoxy resin, a phenol resin or a Tef (registered trademark) may be used. this invention. The present invention will be described below by way of examples. Insulating resin film A is a polyimide film with a film thickness of 38/zm (Dongli.

Dupont (股)製之製品名「Kapton 150EN」),依序積層金屬 層B、金屬層C、銅被膜層D,製成樹脂膜金屬膜積層基板。 對所得到的樹脂膜金屬膜積層基板評估初期剝離強度、耐熱 剝離強度、钱刻性、钱刻後的金屬殘渣量、絕緣可靠性。只 要對供作各特性的試料未作特別限定,則採用以下(a)、 (b)、(c)所述的試料。 (a)剝離強度測定 初期剝離強度係按照IPC —TM-650、NUMBER 2. 4. 9的測 定方法來進行。其測定條件為剝離的角度為9〇。。試料係用 如下的減去法形成:導線寬度為lmm ,於樹脂膜金屬膜積層 基板的銅被膜層D之表面上塗佈感光性抗蝕劑(東京應化 098117258 24 201006337 (股)製造,PMER P —RH30 PM),進行曝光使形成寬lmm . 的圖案,用濃度0.3質量%的碳酸鈉水溶液顯影,於氣化鐵 溶液(比重40°波美(Baume),溫度43°C )中浸漬2分鐘後 進行水洗、乾燥。抗蝕劑的剝離係採用濃度4質量%的氮氧 化鈉水溶液。 又,耐熱剝離強度係將與初期剝離強度同樣形狀的試料於 150 C保持168小時後取出,冷卻至室溫後,與初期剝離強 • 度同樣’以剝離的角度為90。來測定該剝離強度。 如初期剝離強度為600N/m以上、耐熱試驗後的剝離強度 (耐熱剝離強度)為400N/m以上,則判斷為良好。 (b) 蝕刻性及金屬殘渣量 蚀刻性的評估係將樹脂膜金屬膜積層基板切出3cmx 3cm ’於化學蝕刻液中浸潰2分鐘後進行水洗、乾燥。目測 確認絕緣樹脂膜上金屬層是否殘留,當有明顯殘留時,則判 ❹斷不可僅用上述化學蝕刻液進行佈線加工。另一方面,當難 以目測確認判斷及無法確認殘留時,為了測定蝕刻後的金屬 殘潰量,係將除去金屬層而使表面露出的絕緣樹脂膜A,採 用微波分解裝置’用硝酸5ml與過氧化氫1ml構成的溶液進 * 行溶解’對所得到的溶液中的金屬成分用ICP —MS (高頻感 應電漿發光分光/質量分析)進行定量分析,測定金屬殘渣 量(金屬層B及金屬層c的合計量)。 (c) 絕緣可靠性 098117258 25 201006337 絕緣可靠性的評估係依JPCA〜ET04標準進行。 測定試料係對樹脂膜金屬膜積層基板,將圖3所示的4〇 以m節距(線寬20/zm、間隔寬度20//m)的梳型佈線,與 剝離強度測定同樣用減去法形成。梳型佈線是係梳齒狀導體 之重疊長度(10)為20mm’梳齒狀導體前端與短路棒(处〇忖 bar)的間隙(11a、lib)為5mm。對佈線間施加電位差DC6〇v, 於溫度85°C、相對濕度85%放置1000小時,絕緣電阻值係 採用遷移試驗機(IMV杜製造,商品名:MIG—87)進行測 定。把電阻值達到106Ω以下的時點判斷為短路不良,經過 1000小時後才達到1〇6Ω以上,則判斷為合格。 (實施例1) 將厚38gm的聚醯亞胺膜(東麗.Dupont(股)製之製〇名 「Kaptonl50EN」)設置在濺鍍裝置上,真空排氣至 後’用紅外線加熱器加熱聚醯亞胺膜,把膜中的水分除去 後’真空排氣至lxl(T4Pa。接著,導入Ar氣,將裝置内壓 力保持在0· 3Pa’在聚醯亞胺膜的單面上用濺鍍法依序_成 膜厚10nm的Ni —7質量%Cr層、膜厚10nm的Ni〜18哲 賀量 %Cr-10質量%Mo層、膜厚〇. 1 // m的銅被膜層後,從丨賤 置中取出。接著,在銅被膜層上用電鍍法形成膜厚的 銅層,得到絕緣膜金屬膜積層體1。 由所得之樹脂膜金屬膜積層基板1製造剝離強度測定試 料及絕緣可靠性測定試料,供給各試驗。 098117258 26 201006337 初始制離強度為654N/m、耐熱剝離強度為576N/m,為良 好。又’絕緣可靠性試驗係對3個試料進行試驗’經過1〇〇〇 小時後均仍保持106〇以上的電阻,為良好。 #刻性的評估係將樹脂膜金屬膜積層基板1切出3cmx 乍為化學钱刻液係採用氣化鐵水溶液(比重40。波美, 孤度43C ) ’進行2分鐘蝕刻,用目測觀察絕緣樹脂膜上的 金屬層1全>容解。另外’絕緣樹賴的表層部上稍殘留的金 肇屬成刀係使用微波分解裝置,用硝酸5ml與過氧化氫imi 、’液進行溶解,將所得到的溶液中的金屬成分用1C? MS進订疋量分析,結果是少至〇.〇34/zg/cm2,為良好。 其結果整理於表丨。 (實施例2) 〇吏用金屬層請用膜厚3nm的Ni —7質量%Cr、金屬 ❿ + Μ厚Μη"1 ^ Nl —2G質量·形成金屬膜而得到的 屬膜積層基板2以外,與實施例i同樣製造試料, 進订各錢’其結果示於表卜 (實施例3) 厘η用金屬層請用膜厚5酿的Ni、金屬層c採用膜 厚 20nm 的 Ni、β _ 磁接質 形成金屬膜而得到的樹脂膜金屬 ^ h外,與實施们同樣製造試料,騎各試驗, 其結果不於表1。 (實施例4) 098117258 27 201006337 除了使用金屬層B採用膜厚20nm的Ni — 7質量%的Cr、 金屬層C採用膜厚10nm的Ni —18質量%Cr-10質量%的Mo 形成金屬膜而得到的樹脂膜金屬膜積層基板4以外,與實施 例1同樣製造試料,進行各試驗,其結果示於表1。 (實施例5) 除了使用金屬層B採用膜厚15nm的Ni — 7質量%的Cr、 金屬層C採用膜厚5nm的Ni —18質量%Cr-10質量%Mo形成 金屬膜而得到的樹脂膜金屬膜積層基板5以外,與實施例1 同樣製造試料,進行各試驗,其結果示於表1。 (實施例6) 除了使用金屬層B採用膜厚5nm的Ni-14質量%Cr、金屬 層C採用膜厚20nm的Ni —20質量%0形成金屬膜而得到的 樹脂膜金屬膜積層基板6以外,與實施例1同樣製造試料, 進行各種試驗,其結果示於表1。 (實施例7) 除了使用金屬層B採用膜厚15nm的Ni — 7質量%Cr、金屬 層C採用膜厚25nm的Ni — 40質量%Cr形成金屬膜而得到的 樹脂膜金屬膜積層基板7以外,與實施例1同樣製造試料, 進行各試驗,其結果示於表1。 (實施例8) 除了使用金屬層B採用膜厚10nm的Ni —7質量如!·、金屬 層C採用膜厚5nm的Ni —70質量%(:1·形成金屬膜而得到的 098117258 28 201006337 樹脂膜金屬膜積層基板以外,與實施例1同樣製造試料,進 行各试驗’其結果示於表1。 (實施例9) 除了使用金屬層B採用膜厚i〇nm的Ni —5. 6質量队!*一 質量%Mo、金屬層C採用膜厚i〇nm的Ni —20質量%Cr形成 金屬膜而得到的樹脂膜金屬膜積層基板9以外,與實施例1 同樣製造試料,進行各試驗,其結果示於表1。 Φ (實施例10) 除了使用金屬層B採用膜厚l〇nm的Ni —13質量%V、金屬 層C採用膜厚10nm的Ni —2〇質量%(^形成金屬膜而得到的 樹脂膜金屬膜積層基板1〇以外,與實施例丨同樣製造試料, 進行各试驗’其結果示於表1。 (實施例11) 除了使用金屬層B採用膜厚l〇nm的Ni —7_ 5質量。/ji、金 •屬層C採用膜厚1〇咖的Ni_2〇質量%以形成金屬膜而得到 的樹脂膜金屬膜積層基板u以外,與實施例丨同樣製造試 料,進行各試驗,其結果示於表丨。 化 (實施例12) ' 除了對樹脂膜金屬膜積層基板1的蝕刻性進行評估的 .學蚀刻液係採用鹽酸酸性氯化銅水溶液(:農声 lmol/卜 CuCl2:比重 i 3、〇Rp: 58〇mV、溫度:4代)/ · 與實施例1同樣製料料,騎各試驗,餘㈣於^ ’ 098117258 29 201006337 (比較例1) 除了使用金屬層B採用膜厚10nm的Ni —18質量%Cr—10 質量%Mo、金屬層C採用膜厚10nm的Ni —7質量…!'形成而 得到的樹脂膜金屬膜積層基板13以外,與實施例1同樣製 造試料,進行各試驗,其結果示於表1。 (比較例2) 除了使用金屬層B採用膜厚20nm的Ni-18質量°/〇Cr—10 質量%Mo、不設置金屬層C,形成銅被膜層D而得到的樹脂 膜金屬膜積層基板14以外,與實施例1同樣製造試料,進 行各試驗,其結果示於表1。 (比較例3) 除了使用金屬層B採用膜厚20nm的Ni — 20質量%(:1·、不 設置金屬層C,形成銅被膜層D而得到的樹脂膜金屬膜積層 基板15以外,與實施例1同樣製造試料,進行各試驗,其 結果示於表1。 (比較例4) 除了使用金屬層B採用膜厚10nm的Ni —7質量%Cr、不設 置金屬層C,形成銅被膜層D而得到的樹脂膜金屬膜積層基 板16以外,與實施例1同樣製造試料,進行各試驗,其結 果示於表1。 (比較例5) 除了使用金屬層B採用膜厚2nm的Ni —7質量%Cr、金屬 098117258 30 201006337 層C採用膜厚15nm的Ni — 20質量%Cr形成金屬膜而得到的 樹脂膜金屬膜積層基板17以外,與實施例1同樣製造試料, 進行各試驗,其結果示於表1。 (比較例6) 除了使用金屬層B採用膜厚10nm的Ni —7質量%0合金、 金屬層C採用膜厚3nm的Ni —18質量%Cr—10質量%Mo形成 金屬膜而得到的樹脂膜金屬膜積層基板18以外,與實施例 Φ 1同樣製造試料,進行各試驗,其結果示於表1。 (參考例) 除了使用金屬層B採用膜厚5nm的Ni-7質量%Cr合金、 金屬層C採用膜厚lOOnm的Ni — 20質量%Cr形成金屬膜而 得到的樹脂膜金屬膜積層基板19以外,與實施例1同樣製 作試料,進行蝕刻性試驗,其結果示於表1。The product name "Kapton 150EN" manufactured by Dupont Co., Ltd.) is sequentially laminated with a metal layer B, a metal layer C, and a copper film layer D to form a resin film metal film laminate substrate. The initial peel strength, the heat-resistant peel strength, the money-etching property, the amount of metal residue after the burn, and the insulation reliability were evaluated for the obtained resin film metal film laminated substrate. The sample described in the following (a), (b), and (c) is used as long as the sample for each characteristic is not particularly limited. (a) Measurement of peel strength The initial peel strength was measured in accordance with the measurement methods of IPC-TM-650 and NUMBER 2.4.9. The measurement conditions were that the angle of peeling was 9 Å. . The sample was formed by the following subtraction method: the wire width was 1 mm, and a photosensitive resist was applied on the surface of the copper film layer D of the resin film metal film laminated substrate (Tokyo 098117258 24 201006337 (share), PMER) P—RH30 PM), exposure was carried out to form a pattern having a width of 1 mm, developed with a sodium carbonate aqueous solution having a concentration of 0.3% by mass, and immersed in a vaporized iron solution (specific gravity: 40° Baume, temperature: 43° C.) After a minute, it was washed with water and dried. The peeling of the resist was carried out using a sodium oxynitride aqueous solution having a concentration of 4% by mass. Further, the heat-resistant peel strength was measured by holding the sample having the same shape as the initial peel strength at 150 C for 168 hours, and after cooling to room temperature, the peeling angle was 90 as the initial peel strength. The peel strength was measured. When the initial peel strength was 600 N/m or more and the peel strength (heat-resistant peel strength) after the heat resistance test was 400 N/m or more, it was judged to be good. (b) Etching property and metal residue amount The etching property was evaluated by cutting a resin film metal film laminate substrate by 3 cm x 3 cm' in a chemical etching solution for 2 minutes, followed by washing with water and drying. Visually, it was confirmed whether or not the metal layer on the insulating resin film remained. When there was a significant residue, it was judged that the wiring was not processed only by the above chemical etching solution. On the other hand, when it is difficult to visually confirm the judgment and the residue cannot be confirmed, in order to measure the amount of metal residue after the etching, the insulating resin film A from which the metal layer is removed and the surface is exposed is subjected to a microwave decomposing apparatus using 5 ml of nitric acid. A solution of 1 ml of hydrogen peroxide is dissolved. The metal component in the obtained solution is quantitatively analyzed by ICP-MS (high-frequency induction plasma luminescence/mass spectrometry) to determine the amount of metal residue (metal layer B and metal). The total amount of layer c). (c) Insulation reliability 098117258 25 201006337 The evaluation of insulation reliability is carried out in accordance with the JPCA to ET04 standards. The measurement sample was applied to the resin film metal film laminated substrate, and the comb wiring having a pitch of m ( (line width 20/zm, interval width 20/m) shown in FIG. 3 was subtracted from the peel strength measurement. The law is formed. The comb-type wiring is such that the overlap length (10) of the comb-shaped conductor is 20 mm. The gap (11a, lib) between the tip end of the comb-shaped conductor and the short-circuit bar (bar) is 5 mm. A potential difference of DC6 〇 v was applied between the wirings, and the temperature was set at a temperature of 85 ° C and a relative humidity of 85% for 1000 hours, and the insulation resistance value was measured by a migration tester (manufactured by IMV Du, trade name: MIG-87). When the resistance value reached 106 Ω or less, it was judged to be a short-circuit defect, and after 1000 hours or more, it was judged to be acceptable after reaching 1 〇 6 Ω or more. (Example 1) A 38 gm thick polyimine film (manufactured by Toray Dupont Co., Ltd., "Kaptonl 50EN") was placed on a sputtering apparatus, and evacuated to a later stage. The yttrium imide film, after removing the moisture in the film, was evacuated to lxl (T4Pa. Then, Ar gas was introduced, and the pressure inside the device was maintained at 0·3 Pa'. Sputtering was performed on one side of the polyimide film. The method is as follows: a Ni-7 mass% Cr layer having a film thickness of 10 nm, a Ni~18 gram mass of a film thickness of 10 nm, a Cr-10 mass% Mo layer, and a film thickness 〇. 1 / m of the copper film layer, Then, a copper layer having a film thickness is formed on the copper film layer by electroplating to obtain an insulating film metal film layered body 1. The peeling strength measurement sample and insulation are produced from the obtained resin film metal film laminated substrate 1. The reliability measurement sample was supplied to each test. 098117258 26 201006337 The initial separation strength was 654 N/m, and the heat-resistant peel strength was 576 N/m, which was good. The 'insulation reliability test was conducted on three samples'. After 10 hours, the resistance is still above 106〇, which is good. #刻性评价系The lipid film metal film laminate substrate 1 was cut out by 3 cm x 乍 as a chemical money engraving liquid system using an aqueous solution of iron oxide (specific gravity 40. Baume, degree of 45C) was etched for 2 minutes, and the metal layer on the insulating resin film was visually observed. In addition, the metal stalk that is slightly left on the surface layer of the insulating tree is a microwave decomposing device, and is dissolved in 5 ml of nitric acid and hydrogen imi, 'liquid, and the solution is obtained. The metal component was analyzed by 1C? MS, and the result was as low as 〇.〇34/zg/cm2, which was good. The results were summarized in Table (. (Example 2) For the metal layer, use a film thickness of 3 nm. In the same manner as in the example i, the sample was prepared in the same manner as in the example i, and the result was as follows: Ni- 7 mass% Cr, metal ❿ + Μ Μ & 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 属 属 属 属 属 属 属 属 属 属In the case of the metal layer, the Ni layer and the metal layer c are made of a metal layer having a thickness of 20 nm, and a metal film obtained by forming a metal film with a film thickness of 20 nm is used. The samples were prepared in the same manner as the implementers, and each test was carried out. The results are not shown in Table 1. (Example 4) 0981172 58 27 201006337 A resin film metal obtained by forming a metal film using a metal layer B with a thickness of 20 nm of Ni- 7 mass% of Cr and a metal layer C of 10 nm by mass of Ni-18 mass% Cr-10 mass% of Mo. A sample was produced in the same manner as in Example 1 except for the film laminate substrate 4, and each test was carried out. The results are shown in Table 1. (Example 5) A metal layer B was used to have a thickness of 15 nm of Ni-7 mass% of Cr or a metal layer. In the same manner as in Example 1, a sample was prepared in the same manner as in Example 1 except that the resin film was used to form a metal film having a thickness of 5 nm and a thickness of 5 nm by mass of Cr-10% by mass. The test was carried out, and the results are shown in Table 1. . (Example 6) A resin film metal film laminated substrate 6 obtained by forming a metal film using a metal layer B of Ni-14 mass% Cr having a thickness of 5 nm and a metal layer C of Ni-20 mass% of a film thickness of 20 nm was used. A sample was produced in the same manner as in Example 1, and various tests were carried out. The results are shown in Table 1. (Example 7) A resin film metal film laminated substrate 7 obtained by forming a metal film using a metal layer B of Ni-7 mass% Cr having a thickness of 15 nm and a metal layer C of Ni-40 mass% Cr having a film thickness of 25 nm was used. A sample was produced in the same manner as in Example 1, and each test was carried out. The results are shown in Table 1. (Example 8) A Ni-7 mass of a film thickness of 10 nm was used in addition to the metal layer B, and a metal layer C was used in a thickness of 5 nm of Ni-70 mass% (:1· 098117258 28 201006337 resin obtained by forming a metal film) In the same manner as in the first embodiment, the sample was produced in the same manner as in the first embodiment, and the results were as shown in Table 1. (Example 9) The Ni-5.6 mass of the film thickness i〇nm was used except for the use of the metal layer B. In the same manner as in the first embodiment, samples were prepared and tested in the same manner as in Example 1 except that the resin film metal film laminate substrate 9 was formed by forming a metal film with a film thickness of i 〇 nm of Ni-20 mass% Cr. The results are shown in Table 1. Φ (Example 10) In the case of using the metal layer B, Ni - 13% by mass of the film thickness l〇nm was used, and the metal layer C was made of Ni 2 mass % of the film thickness of 10 nm (^ A sample was produced in the same manner as in Example 〇 except for the resin film metal film laminated substrate obtained by the metal film, and each test was carried out. The results are shown in Table 1. (Example 11) The film thickness was used except for the use of the metal layer B. Ni of Ni_7_5 mass of nm. /ji, gold genus layer C adopts Ni_2〇% by mass of film thickness In the same manner as in Example 制造, a sample was produced in the same manner as in Example 以外, and each test was carried out, and the results are shown in Table 丨. (Example 12) 'In addition to the resin film metal film laminated substrate 1 For the evaluation of the etching property, an acidic copper chloride aqueous solution (: agricultural sound lmol/bu CuCl2: specific gravity i 3, 〇Rp: 58 〇 mV, temperature: 4 generations) was used for the evaluation of the etchability, and the same as in the first embodiment. Ingredients, riding each test, the remainder (4) in ^ ' 098117258 29 201006337 (Comparative Example 1) except for the use of the metal layer B, a film thickness of 10 nm Ni - 18% by mass Cr - 10% by mass Mo, the metal layer C using a film thickness of 10 nm A sample was produced in the same manner as in Example 1 except that the resin film metal film laminated substrate 13 was formed, and the respective tests were carried out. The results are shown in Table 1. (Comparative Example 2) In addition to the use of the metal layer B A sample was produced in the same manner as in Example 1 except that the resin film metal film laminate substrate 14 obtained by forming the copper film layer D without using the metal layer C having a film thickness of 20 nm and having a Ni 18 mass ° / 〇Cr - 10 mass % Mo was used. Each test was carried out and the results are shown in Table 1. (Comparative 3) The same as in the first embodiment except that the resin layer metal film laminated substrate 15 obtained by forming the copper film layer D without using the metal layer C and having a thickness of 20 nm of Ni-20 mass% (:1) is used. The sample was produced and each test was carried out, and the results are shown in Table 1. (Comparative Example 4) A copper film layer D was formed by using a metal layer B of Ni-7 mass% Cr having a thickness of 10 nm and no metal layer C. A sample was produced in the same manner as in Example 1 except that the resin film metal film laminate substrate 16 was used, and each test was carried out. The results are shown in Table 1. (Comparative Example 5) A resin film metal film layer obtained by forming a metal film using a metal layer B having a thickness of 2 nm of Ni-7 mass% Cr, metal 098117258 30 201006337, and a film thickness of 15 nm of Ni-20 mass% Cr. A sample was produced in the same manner as in Example 1 except for the substrate 17, and each test was carried out. The results are shown in Table 1. (Comparative Example 6) A resin film obtained by forming a metal film using a metal layer B of Ni-7 mass% 0 alloy having a thickness of 10 nm and a metal layer C of Ni-18 mass% Cr-10 mass% Mo having a thickness of 3 nm A sample was produced in the same manner as in Example Φ 1 except for the metal film laminate substrate 18, and each test was carried out. The results are shown in Table 1. (Reference Example) The metal film B is formed of a Ni-7 mass% Cr alloy having a thickness of 5 nm, and the metal layer C is formed by forming a metal film using Ni-20 mass% Cr having a thickness of 100 nm. A sample was prepared in the same manner as in Example 1, and an etching test was performed. The results are shown in Table 1.

098117258 31 201006337 e - ° 〔I<〕 8SZXH860 201006337 由表1明顯可知’實施例1〜12製造的本發明例1〜12 - 係絕緣樹脂膜A的表面積層鉻含量未滿15質量%的金屬層 . B,在金屬層B的表面,積層鉻含量15質量%以上的金屬層 C,在金屬層C的表面,積層銅被膜層的印刷佈線基板,具 有良好的剝離強度’蝕刻後的金屬殘渣也少,得到高的絕緣 可靠性。 另一方面,比較例1 ’金屬層B的鉻含量超過15質量%、 ^ 金屬層C的絡含量未滿15質量%。由於金屬層B的鉻含量超 過15質量% ’蝕刻後目測可以觀察到金屬殘渣,可知無法碟 保絕緣可靠性。 ;比較例2中’由於僅鉻含量超過15質量%的金屬層B為基 底金屬層’與比較例1同樣地,蚀刻後目測可以觀察到金屬 殘渣’可知無法確保絕緣可靠性。而比較例3係與比較例2 ❹同樣地’僅金屬層B形成基底金屬層,目測觀察钱刻性,可 以觀察到聚醮亞胺膜的表面露出,測定金屬殘逢量時超過 0· 15/zg/cm2,可知無法確保絕緣可靠性。 比較例4中,金屬層B的鉻含量為7質量%,蝕刻性及金 屬殘渣量良好,但由於基底金屬層僅由金屬層B構成,可知 無法確保絕緣可靠性。 比較例5中’金屬層B及金屬層C的鉻含量處於本發明的 申請專利範圍内’但由於金屬層B的膜厚為2nm,即使可滿 098117258 33 201006337 足目測的娜,但金屬殘渣量為〇15—,可 確保絕緣可靠性,而比較例,金屬層B及金屬層c的欲 含量處於本發明的中請專利範圍内,但金屬層^的 3nra,可知無法確保絕緣可靠性。 、馬 中’金騎B及金屬層含量處於本發明 相專利範園内,僅金屬層C的厚度達到⑽⑽,比—般的厚 很多,但目測賴刻性良好,金屬殘潰量也少至〇〇 g/cm2 ’是良好的。 【圖式簡單說明】 圖1為本發明之印刷佈線基板中所使用的樹脂膜金屬膜 積層體的斷面圖。 圖2為表示錄-路合金的鉻量與_殘潰量的關係之圖。 圖3為絕緣可罪性評估中使用的梳齒狀佈線之概略圖。 【主要元件符號說明】098117258 31 201006337 e - ° [I<] 8SZXH860 201006337 It is apparent from Table 1 that the inventive examples 1 to 12 of the inventions 1 to 12 are metal layers having a surface area layer having a chromium content of less than 15% by mass. B, a metal layer C having a chromium content of 15% by mass or more is laminated on the surface of the metal layer B, and a printed wiring board having a copper coating layer is laminated on the surface of the metal layer C, and has a good peeling strength, and the metal residue after etching is also Less, get high insulation reliability. On the other hand, in Comparative Example 1, the metal layer B had a chromium content of more than 15% by mass, and the metal layer C had a complex content of less than 15% by mass. Since the chromium content of the metal layer B exceeds 15% by mass. The metal residue can be observed visually after etching, and it is understood that the insulation reliability cannot be ensured. In Comparative Example 2, the metal layer B having a chromium content of more than 15% by mass is the base metal layer. As in the case of Comparative Example 1, the metal residue was observed by visual observation after the etching, and it was found that the insulation reliability could not be ensured. On the other hand, in Comparative Example 3, the base metal layer was formed only in the metal layer B in the same manner as in Comparative Example 2, and the surface of the polyimide film was observed by visual observation. The surface of the polyimide film was observed to be more than 0.15. /zg/cm2, it can be seen that insulation reliability cannot be ensured. In Comparative Example 4, the chromium content of the metal layer B was 7% by mass, and the etching property and the amount of metal residue were good. However, since the underlying metal layer was composed only of the metal layer B, it was found that the insulation reliability could not be ensured. In Comparative Example 5, the chromium content of the metal layer B and the metal layer C is within the scope of the patent application of the present invention, but since the film thickness of the metal layer B is 2 nm, the amount of metal residue can be measured even if it is full of 098117258 33 201006337. In the case of 〇15-, the insulation reliability can be ensured. In the comparative example, the content of the metal layer B and the metal layer c is within the scope of the patent application of the present invention, but the metal layer is 3 nra, and it is known that the insulation reliability cannot be ensured. The content of 'Jinqi B and metal layer in Mazhong is in the patent garden of the invention. Only the thickness of the metal layer C reaches (10) (10), which is much thicker than the general one, but the visual inspection is good, and the amount of metal collapse is also small. 〇g/cm2 'is good. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a resin film metal film laminate used in a printed wiring board of the present invention. Fig. 2 is a graph showing the relationship between the amount of chromium in the recording-road alloy and the amount of _residue. Fig. 3 is a schematic view showing a comb-tooth wiring used in the evaluation of insulation sinus. [Main component symbol description]

^ 絕緣樹脂膜 ; 金屬層 : 金屬層 銅被膜層 短路棒(short bar) 樹脂膜金屬膜積層基板 梳齒狀導體 098117258 34 201006337 10 梳齒狀導體之重疊長度 10a、10b 梳型佈線 11a、lib 間隙^ Insulating resin film ; Metal layer : Metal layer Copper film layer Short bar Resin film Metal film laminate substrate Comb-shaped conductor 098117258 34 201006337 10 Overlapping length of comb-shaped conductor 10a, 10b Comb wiring 11a, lib Clearance

098117258 35098117258 35

Claims (1)

201006337 七、申請專利範圍: 1. 一種印刷佈線基板,侧由化學㈣處理,選擇性地除 去不介隔接著劑而將金屬_層在絕緣樹賴a的至少一 個表面上所成的樹賴金制積層基板之 需要部分,而形成導體佈線者,其特徵在於,構成上述= 佈線的金屬膜包括: 在上述絕緣樹脂膜A的表面上積層的金屬層b,該金屬層201006337 VII. Patent application scope: 1. A printed wiring substrate, the side is treated by chemical (4), selectively removing the metal lining layer formed on at least one surface of the insulating tree a without interposing the adhesive. A metal film constituting the above-mentioned = wiring includes a metal layer b laminated on the surface of the insulating resin film A, and the metal layer is formed by forming a required portion of the substrate. B由錁或者含70質量%以上的鎳和未滿15質量%的絡之錦_ 鉻合金構成; ' 在上述金屬層B的表面積層的金屬層C,該金屬層c包含 含鎳、含鉻15質量%以上的合金;以及 層^上述金屬層c的表面積層之膜厚應m〜35_的銅被膜 僅使用蘭上述鋼被膜層〇的化學餘刻液以選擇性地除 去上述金屬膜的不需要部分。 2·如申請專利範圍第i項之印刷佈線基板其中,對包含 依序積層有上述金屬層B、金屬層C及銅被膜層D的上述金 屬膜之導體佈線’制氣化鐵水料錢酸雜氣化銅水溶 液進行化予侧處理後,在上述絕緣樹脂膜A上殘留的金屬 的殘潰量,於上述絕緣樹賴A的每單位面_為〇. ^ g/cm2以下。 3.如申請專利範㈣1項之印刷佈線基板,其中,上述金 098117258 36 201006337 屬層B含有釩13質量%以下、鈦 以下,而餘量為錄或者含7〇質量°銦20質量% 的鉻之錄-鉻合金與!質量%以下^上的鎳和未滿15質量% 厚為3〜施m。#量…的不可避免雜質構成,其膜 4.如申請專利第2項之㈣_基板,其中,上述金 屬層B含有叙13質量%以下、欽 0質置:%以下、銷20質量% 以下,而餘量為鎳或者含70質量 參 的鉻之錄-鉻合金與】質她下/的錄和未滿15質量% 厚為一質她下的不可避免雜質構成,其膜 3.如T堉寻利範園第i ^ 仕一項之印刷佈線基板, 八中,上述金屬層c係含鉻15 f量%以上、鎳質 量% ’ 1質量%以下的不可避免雜質所構成之合金,或者含絡 15質量%以上、鎳Ο.ον^質量%、鉬〇 〇1〜切質量% ] 質量%以下的不可避免雜質所構成之合金, 應 序&〜37nm ’ 響或膜厚5111"以上且與金屬層B合計在4〇nm以下。 6.如申請專利翻第丨至4項中任—項之印刷佈線基板, 其中,上述化學蝕刻液不含錳及氰化物。 7.如申請專利第丨至4項中卜項之印刷佈線基板, 其中’上述化學蝕刻液為氯化鐵水溶液或鹽酸酸性氯化銅水 溶液。 8·如申請專利範圍第1或2項之印刷佈線基板,其令,上 述絕緣樹脂膜A係選自聚醯亞胺系膜、聚醯胺系祺、聚妒系 098117258 37 201006337 膜、聚四氟乙烯系臈、聚苯硫醚系膜、聚萘二甲酸乙二酯系 膜、液晶聚合物域之至少1種以上的樹脂膜。 、 9. 一種印刷佈線基板之製造方法,係藉由化學蝕刻,選擇 性地除去不介隔接著劑而將金屬膜積層在絕緣樹脂膜A的 至少-個表Φ上所成的_膜金屬崎層基板之上述金屬 膜的不需要部分,而形成導體佈線者,其特徵在於, 上述樹脂膜金屬臈積層基板係以下述方式形成:在上述絕 緣樹脂膜A的表面上,採用乾式雜法形成鎳或以鎳作為主參 成分的金屬層B,然後,在上述金屬層B的表面,採用乾式 鑛敷法形成以含15質量%以上的鉻及鎳而成的合金、或含 15質量%以上的鉻、錦及銦而成的合金所構成的金屬層c 後,在上述金屬層C的表面形成由膜厚施瓜〜的銅被 層積層而成之金屬膜,將上述金屬膜採用丄種飾刻液進 行選擇性地除去,形成導體佈線。 U利㈣第9項之印刷佈線基板之製造方法, 其中’上述化學_液不含鐘及氰化物。 溶液 其1中範圍第9項之印刷佈線基板之製造方法, =,上述化予姓刻液為氣化鐵水溶液或鹽酸酸性氣化銅水 其^•如巾請專職圍第9項之印刷佈線基板之激造方法, Γ2Γ被臈層D係於以乾式錢敷法形成_層表面 上,採用電鑛法而形成銅層。 098117258 38 201006337 13.如申請專利範圍第9或12項之印刷佈線基板之製造方 法,其中,上述乾式鍍敷法為真空蒸鍍法、濺鍍法或離子鍍 法之任一種。B is composed of cerium or 70% by mass or more of nickel and less than 15% by mass of lanthanum chrome alloy; 'the metal layer C of the surface layer of the above metal layer B, the metal layer c containing nickel and chromium 15% by mass or more of the alloy; and the film thickness of the surface layer of the metal layer c of the above-mentioned metal layer c should be m~35_, and only the chemical remnant of the above-mentioned steel coating layer is used to selectively remove the metal film. No part is needed. 2. The printed wiring board according to item i of the patent application, wherein the conductor wiring of the metal film including the metal layer B, the metal layer C and the copper film layer D sequentially laminated is made into a gasified iron water acid. After the side-by-side treatment, the amount of the metal remaining on the insulating resin film A is 〇. ^ g/cm 2 or less per unit surface of the insulating tree A. 3. The printed wiring board according to claim 1 (4), wherein the gold layer 098117258 36 201006337 is a layer B containing vanadium of 13% by mass or less and less than titanium, and the balance is recorded or containing 7 〇 mass indium and 20% by mass of chromium. Record - chrome alloy and! The mass % or less of nickel and less than 15% by mass are 3 to apply m. The material of the invention is the material of the invention. And the balance is nickel or a chromium-containing alloy containing 70 masses of chrome-chromium alloy and the quality of her under / recorded and less than 15% by mass thick is a quality of her underlying impurities, its membrane 3. such as T印刷 堉 利 范 范 第 第 第 第 第 第 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷 印刷15% by mass or more, nickel Ο.ον^ mass%, molybdenum 〇〇1 to cut mass%] an alloy composed of unavoidable impurities of mass% or less, in the order of &~37nm 'resonance or film thickness 5111" The total amount of the metal layer B is 4 〇 nm or less. 6. The printed wiring board according to any one of the preceding claims, wherein the chemical etching solution contains no manganese or cyanide. 7. The printed wiring board according to any one of the preceding claims, wherein the chemical etching solution is an aqueous solution of ferric chloride or an aqueous solution of acidic copper chloride hydrochloride. 8. The printed wiring board according to claim 1 or 2, wherein the insulating resin film A is selected from the group consisting of a polyimide film, a polyamine system, a polyfluorene system 098117258 37 201006337 film, a poly 4 At least one resin film of a vinyl fluoride fluorene, a polyphenylene sulfide film, a polyethylene naphthalate film, or a liquid crystal polymer domain. 9. A method of manufacturing a printed wiring board by selectively removing a metal film laminated on at least one of the surface Φ of the insulating resin film A without chemically etching. In the case of forming a conductor wiring of the above-mentioned metal film of the layer substrate, the resin film metal-clad layer substrate is formed by forming a nickel by a dry impurity method on the surface of the insulating resin film A. Or a metal layer B containing nickel as a main component, and then, on the surface of the metal layer B, an alloy containing 15% by mass or more of chromium and nickel or 15% by mass or more is formed by a dry ore method. After the metal layer c composed of an alloy of chromium, brocade, and indium, a metal film formed by laminating a copper layer of a film thickness is formed on the surface of the metal layer C, and the metal film is made of a metal The engraving is selectively removed to form a conductor wiring. The method for producing a printed wiring board according to item 9, wherein the chemical liquid does not contain a clock or a cyanide. The method for producing a printed wiring board according to the ninth aspect of the solution, =, the above-mentioned chemical solution is a solution of a gasified iron solution or an acidified copperated water of hydrochloric acid, and the printing wiring of the ninth item is required. In the method of stimulating the substrate, the ruthenium layer D is formed on the surface of the layer by dry-packing, and a copper layer is formed by electro-mineralization. The method of manufacturing a printed wiring board according to claim 9 or 12, wherein the dry plating method is any one of a vacuum deposition method, a sputtering method, and an ion plating method. 098117258 39098117258 39
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CN101594737B (en) 2011-09-07

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