TW200903529A - Varistor and light emitting device - Google Patents
Varistor and light emitting device Download PDFInfo
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- TW200903529A TW200903529A TW97110858A TW97110858A TW200903529A TW 200903529 A TW200903529 A TW 200903529A TW 97110858 A TW97110858 A TW 97110858A TW 97110858 A TW97110858 A TW 97110858A TW 200903529 A TW200903529 A TW 200903529A
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- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 26
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 239000002131 composite material Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 6
- 230000001747 exhibiting effect Effects 0.000 claims description 6
- 238000001354 calcination Methods 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 238000004020 luminiscence type Methods 0.000 claims 1
- 235000012054 meals Nutrition 0.000 claims 1
- 239000011230 binding agent Substances 0.000 abstract description 4
- 238000010304 firing Methods 0.000 abstract 2
- 230000017525 heat dissipation Effects 0.000 description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 210000003298 dental enamel Anatomy 0.000 description 8
- 239000002245 particle Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
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- Thermistors And Varistors (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Adjustable Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
200903529 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種變阻器及 【先前技術】 具備其之發光裝置 〇200903529 IX. Description of the Invention: [Technical Field] The present invention relates to a varistor and a [prior art] illuminating device having the same
作為變阻器’具有包括以下者：素體，A 電壓非線性雜之變㈣素體料 切‘觀出 分而配置於變阻器素體之内部之一對内部電：素體 電極’其形成於上述素體之外表面，且分料接於所對應 之内部電極(例如’參照曰本國之公開公報，特開· 246207號公報）。 【發明内容】 而且，使冑阻器並聯地連接於半導體發光元件或FET (Field Effect Transistor:場效電晶體）等電子元件藉此可 保護電子元件不受ESD(EleCtr〇Static Discharge，靜電放 電）突波之影響。該電子元件於動作中發熱。若電子元件 達到高溫，則會導致元件本身之特性劣化，從而對其動作 造成影響。因此，必需有效地放出所產生之熱。 本發明係為解決上述問題所完成者，其目的在於提供— 種能夠有效地放出熱之變阻器及發光裳置。 本發明人考慮：將金屬設置成與變阻器素體接觸，將傳 遞至變阻器之熱自金屬放出’藉此能夠有效地自變阻器放 出熱。然而，當使金屬與變阻器素體外側之一個面接觸 時，兩者間之接合強度較弱’存在變阻器素體與金屬剝離 之情形。於該情形時’無法有效地自金屬放出傳遞至變阻 130080.doc 200903529 器之熱。因此，為解決該問題，發明人發明了強化金屬與 變阻器素體之間之接合強度之變阻器及發光裝置。 本發明之變阻器之特徵在於包括：變阻器部，其具有顯 現出電壓非線性特性之變阻器素體與夾持該變阻器素體且 以至v σ卩勿相互對向之方式配置之内部電極；外部電 極，其連接於内部電極，且成為外部元件之連接端；及散 熱部，其對變阻器部熱連接；變阻器素體以半導體陶瓷為 主成分，散熱部包含金屬及金屬氧化物之複合材料。 又，本發明之變阻器之特徵在於包括：變阻器部，其具 有顯現出電壓非線性特性之變阻器素體、配置於該變阻器 素體内部之電極部、及配置於變阻器素體之表面且至少一 部分與電極部相互對向之電極部；及散熱部，其對變阻器 部熱連接；變阻器素體以半導體陶究為主成分，散熱部包 含金屬及金屬氧化物之複合材料。 於該變阻器中’散熱部與以半導體陶究為主成分之變阻 器素體同樣地’包含金屬氧化物。藉由使變阻器素體與散 熱部之構成成分共同，抑制於鍛燒等時在變阻器部與散熱 :之間產生裂紋，充分確保變阻器部與散熱部之接合強 :。藉此’利用散熱部之金屬來有效地放出自外 遞至變阻器部之熱。 干得 之自與上述變阻器部接 導通。於該情形時，散 又，較好的是，金屬係於散熱部 觸之面遍及不與變阻器部接觸之面 熱部之散熱效率更高。 又，較好的是 金屬氧化物包jZn〇 。於該情形時，能 130080.doc 200903529 夠更可靠地抑制於鍛燒等時在變阻器部與散熱部之間產生 裂紋’充分確保變阻器部與散熱部之接合強度。 又，較好的是，金屬氧化物包含被塗佈金屬之八丨2〇3。 於該情形時，於散熱部容易形成由金屬構成之散熱路徑， 能夠提高散熱效率。 又較好的疋，金屬以Ag為主成分。由於Ag擴散至作 為變阻器素體之主成分之Zn〇之晶界中，&而能夠進一步 提高變阻器部與散熱部之接合強度。 又，較好的是，藉由同時鍛燒而形成變阻器部與散熱 部。於該情形時’能夠使製造步驟簡化。 又，本發明之發光裝置之特徵在於：其係具有發光元件 與變阻器者’且變阻器包括：變阻器冑，其具有顯現出電 壓非線性特性之變阻器素體與夾持該變阻器素體且以至少 一部分相互對向之方式配置之内部電極；外部電極，其連 接於内部電極，且成為發光元件之連接端；及散熱部，其 配置成與變阻器部接觸；且變阻器素體以Zn〇為主成分， 月欠熱部包含金屬及金屬氧化物之複合材料。 於該發光裝置中，散熱部與以Zn〇為主成分之變阻器素 體同樣地’包含金屬氧化物。藉由使變阻器素體與散熱部 之構成成分共同’能夠抑制於鍛燒等時在變阻器部與散熱 部之：產生裂紋，充分確保變阻器部與散熱部之接合強 ^藉此利用散熱部之金屬來有效地放出自發光元件經 由外部電極而傳遞至變阻器部之熱。 根據本發明之變阻器及發光裝置，能夠有效地放出熱。 130080.doc 200903529 【實施方式】 以下’參照圖式’詳細說明本發明之變阻器及發光裝置 之較佳實施形態。 [第1實施形態] 圖1係本發明之第1實施形態之變阻器之概略立體圖。 又，圖2係圖1之概略剖面圖。如圖1及圖2所示，變阻器vi 具有變阻器部11、一對外部電極丨2、1 3、以及散熱部丨4， 且形成為大致長方體形狀。The varistor 'has the following: the element body, the A voltage nonlinearity change (4) the body material is cut and viewed, and is disposed inside the varistor element body to the internal electricity: the body electrode 'is formed in the above element The outer surface of the body is connected to the corresponding internal electrode (see, for example, Japanese Laid-Open Patent Publication No. 246207). SUMMARY OF THE INVENTION Further, by connecting a varistor in parallel to an electronic component such as a semiconductor light-emitting element or a FET (Field Effect Transistor), the electronic component can be protected from ESD (EleCtr〇Static Discharge). The impact of the rush. The electronic component generates heat during operation. If the electronic component reaches a high temperature, the characteristics of the component itself will deteriorate, which will affect its operation. Therefore, it is necessary to efficiently discharge the generated heat. The present invention has been made to solve the above problems, and an object thereof is to provide a varistor and a light-emitting device capable of efficiently emitting heat. The inventors contemplate that the metal is placed in contact with the varistor element and the heat transferred to the varistor is released from the metal' whereby the heat can be effectively released from the varistor. However, when the metal is brought into contact with one side of the outer side of the varistor element body, the bonding strength between the two is weak. There is a case where the varistor element is peeled off from the metal. In this case, 'the heat cannot be effectively transferred from the metal to the varistor 130080.doc 200903529. Therefore, in order to solve this problem, the inventors have invented a varistor and a light-emitting device which strengthen the joint strength between a metal and a varistor element. The varistor of the present invention is characterized by comprising: a varistor portion having a varistor element exhibiting a voltage non-linear characteristic and an internal electrode sandwiching the varistor element and not being opposed to each other by v σ ;; an external electrode, The connection is connected to the internal electrode and serves as a connection end of the external component; and the heat dissipation portion is thermally connected to the varistor portion; the varistor body is mainly composed of a semiconductor ceramic, and the heat dissipation portion comprises a composite material of a metal and a metal oxide. Further, the varistor of the present invention includes a varistor portion having a varistor element exhibiting a voltage non-linear characteristic, an electrode portion disposed inside the varistor element body, and a surface disposed on the varistor element body and at least a part of The electrode portion facing the electrode portion and the heat dissipating portion are thermally connected to the varistor portion; the varistor body is mainly composed of a semiconductor ceramics, and the heat dissipating portion comprises a composite material of a metal and a metal oxide. In the varistor, the heat radiating portion contains a metal oxide in the same manner as the varistor element mainly composed of semiconductor ceramics. By making the varistor element and the constituent components of the heat radiating portion together, cracks are generated between the varistor portion and the heat radiation during the sinter or the like, and the joint between the varistor portion and the heat radiating portion is sufficiently ensured. Thereby, the metal from the heat radiating portion is used to efficiently discharge heat from the external portion to the varistor portion. It is dried from the varistor section. In this case, it is preferable that the metal is disposed on the surface of the heat dissipating portion to have a higher heat dissipation efficiency over the surface portion which is not in contact with the varistor portion. Further, it is preferred that the metal oxide is composed of jZn〇. In this case, 130080.doc 200903529 can more reliably suppress the occurrence of cracks between the varistor portion and the heat dissipating portion when calcining or the like. The bonding strength between the varistor portion and the heat dissipating portion is sufficiently ensured. Further, it is preferred that the metal oxide comprises tantalum 2 〇 3 of the coated metal. In this case, a heat dissipation path made of metal is easily formed in the heat dissipation portion, and heat dissipation efficiency can be improved. It is also a good bismuth, and the metal is mainly composed of Ag. Since Ag diffuses into the grain boundary of Zn〇 which is a main component of the varistor element body, the bonding strength between the varistor portion and the heat radiating portion can be further improved. Further, it is preferable that the varistor portion and the heat radiating portion are formed by simultaneous calcination. In this case, the manufacturing steps can be simplified. Further, the light-emitting device of the present invention is characterized in that it has a light-emitting element and a varistor, and the varistor includes: a varistor 胄 having a varistor element exhibiting a voltage nonlinear characteristic and clamping the varistor body and at least a part thereof An internal electrode disposed opposite to each other; an external electrode connected to the internal electrode and serving as a connection end of the light emitting element; and a heat dissipating portion disposed in contact with the varistor portion; and the varistor element is mainly composed of Zn , The monthly heat is composed of a composite of metal and metal oxide. In the light-emitting device, the heat dissipating portion contains a metal oxide in the same manner as a varistor element mainly composed of Zn 。. By making the varistor element and the constituent components of the heat dissipating portion together, it is possible to suppress the occurrence of cracks in the varistor portion and the heat dissipating portion during the sinter or the like, and to secure the bonding between the varistor portion and the heat dissipating portion, thereby utilizing the metal of the heat dissipating portion. The heat transmitted from the self-luminous element to the varistor portion via the external electrode is effectively released. According to the varistor and the light-emitting device of the present invention, heat can be efficiently released. 130080.doc 200903529 [Embodiment] Hereinafter, preferred embodiments of the varistor and the light-emitting device of the present invention will be described in detail with reference to the drawings. [First Embodiment] Fig. 1 is a schematic perspective view of a varistor according to a first embodiment of the present invention. 2 is a schematic cross-sectional view of FIG. 1. As shown in FIGS. 1 and 2, the varistor vi includes a varistor portion 11, a pair of external electrodes 丨2, 1-3, and a heat dissipating portion 丨4, and is formed in a substantially rectangular parallelepiped shape.
變阻器部11具有變阻器素體15、第1内部電極16、第2内 部電極17、以及第3内部電極18。變阻器素體15形成為大 致長方體开〉狀，且具有彼此相對向之面15a及面15b、與面 15a及面15b垂直且彼此相對向之面15c及15d、以及與面 15c及面I5d相鄰且彼此相對向之兩個面。 該變阻器素體15係積層複數個變阻器層而形成之積層 體各變阻器層係表現出電壓非線性特性之部分，以Zn〇 為^成分，且包含以或出作為副成分。該等副成分作為金 屬單體或氧化物而存在於變阻器層中。再者，於實際之變 阻器νι中，複數個❾且器層之間之邊#以無法辨認之程度 而一體化。 第1内部電極16及第2内部電極17配置於變 面…。自與一之方向觀察，第丨内部電二第之2 内部電極17呈長方形，且彼此隔開間隔而對稱地配置。第 1内部電極16不露出至變阻器素體15之面i5c、及與面丨九 相鄰之兩個側面’而延伸至與面15a之緣部僅相距特定距 130080.doc 200903529 離之内側之位置為止。同樣，第2内部電㈣不露出 阻器素體15之面15d、及與面15d相鄰之兩個心，而 至與面ISa之緣部延僅相距特定距離之内侧之位置為止 又，第1内部電極16及第2内部電㈣藉由以玻璃為主成 分之竟釉19所覆蓋，上述第1内部電㈣及第2内部電極 彼此電性絕緣。於£釉19上，於與第！内部電極16及第2内 部電極m目對應之位置形成有開口部l9a、i9b。藉 !内部電極16及第2内部電極17之表面之一 19露出之狀態。 曰文袖 第3内部電極18夾持複數層之變阻器㉟且以分別盥第1 内部電極16及第2内部電極17相對向之方式’配置於變阻 益素體Η内之大致中央部分。第3内部電㈣與第^内部電 極1 6及第2内部電極丨7彼此電性絕緣。 外部電極12 ' 13以與第1内部電極16及第2内部電極17相 對應之方式，彼此隔開而對稱地形成於竟轴19之外表面。The varistor portion 11 includes a varistor element body 15, a first internal electrode 16, a second internal electrode 17, and a third internal electrode 18. The varistor element body 15 is formed in a substantially rectangular parallelepiped shape and has faces 15a and 15b facing each other, faces 15c and 15d perpendicular to the faces 15a and 15b, and adjacent to the faces 15c and I5d. And facing each other in two faces. The varistor element body 15 is formed by laminating a plurality of varistor layers, and each of the varistor layer layers exhibits a voltage non-linear characteristic, and contains Zn 〇 as a component and contains or as an auxiliary component. These subcomponents are present in the varistor layer as a metal monomer or oxide. Furthermore, in the actual varistor νι, the edges # between the plurality of layers are integrated in an unrecognizable manner. The first inner electrode 16 and the second inner electrode 17 are disposed on the surface. Viewed from the direction of one, the second inner electrode 17 of the second inner portion has a rectangular shape and is symmetrically arranged at intervals. The first inner electrode 16 is not exposed to the surface i5c of the varistor element body 15 and the two side faces ' adjacent to the face 丨9, and extends to a position away from the edge of the face 15a by a specific distance of 130080.doc 200903529. until. Similarly, the second internal electric (4) does not expose the surface 15d of the resistive element body 15 and the two cores adjacent to the surface 15d, and the position to the inner side of the surface ISa is only a certain distance from the inner side of the surface ISa. 1 The internal electrode 16 and the second internal electric (4) are covered by the glaze 19 mainly composed of glass, and the first internal electric (four) and the second internal electrode are electrically insulated from each other. On the glaze 19, in the first! Openings 19a and i9b are formed at positions corresponding to the inner electrode 16 and the second inner electrode m. By the state in which one of the surfaces 19 of the internal electrode 16 and the second internal electrode 17 is exposed. The third internal electrode 18 sandwiches the varistor 35 of a plurality of layers and is disposed in a substantially central portion of the varistor body 方式 in such a manner that the first internal electrode 16 and the second internal electrode 17 face each other. The third internal electric (four) and the second internal electrode 16 and the second internal electrode 丨7 are electrically insulated from each other. The external electrodes 12'13 are symmetrically formed on the outer surface of the bobbin 19 so as to be spaced apart from each other so as to correspond to the first inner electrode 16 and the second inner electrode 17.
U 外部電極12、13亦延伸至瓷釉19之開口部W、斷内 部’與自瓷釉19露屮夕筮& & 第内°卩電極1 6及第2内部電極1 7接 曰此外部電極12與第1内部電極16電性且物理性地 姐接外部電極13與第2内部電極17電性且物理性地連 電極12、13作為如半導體發光元件61(參照圖7) 之夕。Ρ元件之連接端而發揮作用。 散熱部U與變阻器素體㈣樣地形成為大致長方體形 、有彼此相對向之面14a及面14b、與面14a及面14b 相對向之面14C及面⑷、以及與面14c及面⑷相鄰 130080.doc 200903529 且相對向之兩個面。散熱部14之面14a接合於變阻器素體 15之面15b。 散熱部14由金屬與金屬氧化物之複合材料所形成。作為 此處所謂之金屬，例如可使用Ag、Ag-Pd、Pd等，但考庹 到熱傳導率之方面，較好的是使用Ag。又，作為金屬氧化 物’可使用Al2〇3、ZnO、Si02及Zr02。Al2〇3使用例如藉 由無電解電鍍而對該金屬氧化物之粒子進RAg塗佈者。再 者，金屬氧化物不一定必需包含全部上述a12〇3、、 Si〇2及Zr〇2，亦可包含至少一種以上之該等物質。 此種散熱部14係於面ua與變阻器素體15之面15b接觸之 狀態下，藉由與變阻器部丨丨同時鍛燒而形成。散熱部14之 内部藉由作為金屬之Ag，自與變阻器部】i接觸之面…遍 及導通至不與變阻器部U接觸之面14b、面14c、面Md。 藉由經Ag塗佈之Ai2〇3而更可靠地確立該導通路徑。 接著，說明上述變阻器V1之製造過程。 ’按照特定之比例來混合作為變阻器素體〗5之The U external electrodes 12, 13 also extend to the opening portion W of the enamel 19, and the internal portion of the enamel 19 is connected to the enamel 19 and the second internal electrode 1 6 and the second internal electrode 17 are connected to the external electrode. The first internal electrode 16 is electrically and physically connected to the external electrode 13 and the second internal electrode 17 electrically and physically connected to the electrodes 12 and 13 as the semiconductor light-emitting element 61 (see FIG. 7). The connecting end of the Ρ element functions. The heat dissipating portion U and the varistor element body (4) are formed into a substantially rectangular parallelepiped shape, having faces 14a and 14b facing each other, faces 14C and faces (4) facing faces 14a and 14b, and adjacent faces 14c and faces (4). 130080.doc 200903529 and two sides. The face 14a of the heat radiating portion 14 is joined to the face 15b of the varistor element body 15. The heat radiating portion 14 is formed of a composite material of a metal and a metal oxide. As the metal referred to herein, for example, Ag, Ag-Pd, Pd or the like can be used, but in view of thermal conductivity, Ag is preferably used. Further, as the metal oxide ', Al2?3, ZnO, SiO2, and ZrO2 can be used. Al2〇3 is used as an RAG coater for particles of the metal oxide by, for example, electroless plating. Further, the metal oxide does not necessarily have to include all of the above a12〇3, Si〇2, and Zr〇2, and may contain at least one or more of these substances. The heat radiating portion 14 is formed by simultaneously calcining the varistor portion while the surface ua is in contact with the surface 15b of the varistor element body 15. The inside of the heat radiating portion 14 is electrically connected to the surface 14b, the surface 14c, and the surface Md which are not in contact with the varistor portion U by the surface of the varistor portion i by the Ag as the metal. This conduction path is more reliably established by Ag-coated Ai2〇3. Next, the manufacturing process of the above varistor V1 will be described. 'mixed as a varistor body according to a specific ratio〗 5
添加至該變阻器材料中，獲得漿料。 斋I骽15之主成 阻器 劑等It is added to the varistor material to obtain a slurry. The main cause of the 骽I骽15 is a resistor, etc.
將！機黏合劑及有機溶劑混合於 林叫形成，該導電性糊係 以Ag粒子為主成分之金屬 I30080.doc 200903529 粉末而形成者。 其次，按照特定之順序，將形成有電極部分之生片與未 化成電極部分之生片重疊，從而形成片積層體。繼而，將 所獲得之片積層體切斷為晶片單位，獲得與變阻器部11相 對應之生胚體。其後…80。。〜400。。之溫度，對生胚體 實施〇·5小時〜24小時左右之加減理，藉此進行脫黏合劑 處理。 其次，準備由Ag、Al2〇3、Ζη0、以…及心…之複合材 料形成之散熱部14。繼而，使上述生胚體與散熱部14之面 14a重合，於空氣中或ο:環境下，以8〇〇它以上之溫度同時 對上述生胚體與散熱部14之面Ua進行鍛燒。藉此，形成 變阻器部11與散熱部14之接合體。獲得接合體之後，以覆 盍第1内部電極16及第2内部電極17之方式印刷瓷釉19，進 而，以塞住瓷釉19之開口部19a' 19b之方式，印刷與外部 電極12、13相對應之電極部分。 該電極部係藉由將導電性糊印刷至瓷釉19上，並使該導 電性糊乾燥而形成’上述導電性糊係將有機黏合劑與有機 溶劑混合於以Au粒子或岣粒子為主成分之金屬粉末而形 成者。繼而，於〇2環境下，以8〇(rc以上之溫度同時對上 述導電性糊與瓷釉19進行鍛燒，藉此形成外部電極12、 13，從而元成圖1及圖2所示之變阻器。 於該變阻器VI中，散熱部14包含與作為變阻器素體15之 主成分之ZnO相同之成分作為金屬氧化物，使變阻器素體 15與散熱部14之構成成分共同。又，於鍛燒時，散熱部w J30080.doc 200903529 令所含之Ag於面i4a與面 /、曲5b之界面附近，擴散至作為變阻 '素㈣之主成分之Zn0之晶界中。藉此，牢固地接合變 阻器部】〗與散熱部〗4。 因此，於變阻器V1中，鍛燒時（或者脫黏合劑時）’在變 阻為部U與散熱部14之間幾乎不會產生裂紋，&而能夠充 分地確保變阻器部11與散熱部14之接合強度。因此，自外 部元件經由外部電極12、13而傳遞至變阻器部^之孰量， 籍由Ag粒子與Al2〇3之塗佈部分而於導通路徑中傳遞並 心效率地放出’上述導通路徑係自散熱部Μ中之面… 遍及面14b、面14c、面14d而形成者。 又’於變阻器vi中，同時對變阻器部u與散熱部“進行 鍛燒。此有助於實現製造工序之簡單化，提高變阻器…之 製造效率並有助於降低成本。 [第2實施形態] 現對本發明之第2實施形態之變阻器進行說明。圖3係表 示本發明之第2實施形態之變阻器之概略剖面圖。圖3所示 之變阻HV2之内部電極之構成’與第i實施形態之變阻器 VI不同。 ° 亦即，變阻HV2不具有第3内部電極18(參照圖2)，取而 代之，具有以一端側彼此相對向之方式而配置於變阻器素 體is内之第1内部電極2丨及第2内部電極22。繼而，第 部電極2i及第2内部電極22藉由貫通導體乃而分別連接於 外部電極12、1 3。 ' 於該變阻器V2中’變阻器素體15亦以Zn〇為主成分，散 130080.doc -13- 200903529 熱部14由作為金屬之人3與包含作為變阻器素體Η之主成分 之〇的金屬氧化物之複合材料而形成。因此，與第1實 施形態同樣，能夠充分地確保變阻器部u與散熱部14之接 合強度，自外部元件經由外部電極12、13而傳遞至變阻器 部11之熱量，於導通路徑中傳遞，並被高效率地放出，上 述導通路徑係自散熱部14之面14a遍及面14b、面Me、面 14d而形成者。 [第3實施形態] 現對本發明之第3實施形態之變阻器進行說明。圖4係表 示本發明之第3實施形態之變阻器之概略剖面圖。圖4所= 之變阻器V3中之散熱部14與第2實施形態之變阻器V2更為 不同之處在於 有瓷釉3 1。 於不與變阻器部U接觸之面14b侧亦形成will! The organic binder and the organic solvent are mixed and formed in the forest, and the conductive paste is formed by a metal containing Ag particles as a main component. Next, the green sheet on which the electrode portion is formed is overlapped with the green sheet which is not formed into the electrode portion in a specific order to form a laminated body. Then, the obtained laminated body is cut into wafer units, and a green body corresponding to the varistor portion 11 is obtained. After that...80. . ~400. . At the temperature, the green body is subjected to debonding treatment by adding and subtracting for about 5 hours to 24 hours. Next, a heat radiating portion 14 formed of a composite material of Ag, Al2〇3, Ζη0, and ... and a core is prepared. Then, the green body is superposed on the surface 14a of the heat radiating portion 14, and the surface Ua of the green body and the heat radiating portion 14 is simultaneously calcined at a temperature of 8 Torr or more in the air or in an environment. Thereby, the joined body of the varistor part 11 and the heat radiating part 14 is formed. After the bonded body is obtained, the enamel 19 is printed so as to cover the first internal electrode 16 and the second internal electrode 17, and the printing corresponds to the external electrodes 12 and 13 so as to block the opening 19a' 19b of the glaze 19. The electrode part. The electrode portion is formed by printing a conductive paste onto the enamel 19 and drying the conductive paste to form the above-mentioned conductive paste. The organic binder and the organic solvent are mixed with Au particles or ruthenium particles as main components. Formed by metal powder. Then, in the environment of 〇2, the conductive paste and the enamel 19 are simultaneously calcined at a temperature of rc or higher, thereby forming the external electrodes 12 and 13, thereby forming the varistor shown in FIGS. 1 and 2. In the varistor VI, the heat dissipating portion 14 contains a component similar to ZnO which is a main component of the varistor element body 15 as a metal oxide, and the varistor element body 15 and the heat dissipating portion 14 are formed together. The heat dissipating portion w J30080.doc 200903529 causes the Ag contained in the vicinity of the interface between the surface i4a and the surface/curve 5b to diffuse into the grain boundary of Zn0 which is a main component of the varistor 'tetra(4). Thereby, the bonding is firmly performed In the varistor V1, in the varistor V1, during the calcination (or when the binder is removed), there is almost no crack between the varistor portion U and the heat dissipating portion 14, and The bonding strength between the varistor portion 11 and the heat dissipating portion 14 is sufficiently ensured. Therefore, the amount of conduction from the external element to the varistor portion via the external electrodes 12, 13 is turned on by the coating portion of the Ag particles and the Al2 〇3. Passing in the path and releasing the heart efficiently The through path is formed from the surface of the heat dissipating portion .... It is formed over the surface 14b, the surface 14c, and the surface 14d. Further, in the varistor vi, the varistor portion u and the heat dissipating portion are simultaneously calcined. This contributes to manufacturing. In the simplification of the process, the varistor of the second embodiment of the present invention is shown in the second embodiment of the present invention. A schematic cross-sectional view of the internal electrode of the variable resistance HV2 shown in Fig. 3 is different from the varistor VI of the i-th embodiment. ° That is, the variable resistance HV2 does not have the third internal electrode 18 (see Fig. 2), and is replaced by The first internal electrode 2A and the second internal electrode 22 are disposed in the varistor element is such that the one end side faces each other. Then, the first electrode 2i and the second internal electrode 22 pass through the conductor. Connected to the external electrodes 12, 13 respectively. 'In the varistor V2, the varistor element body 15 is also composed of Zn 〇 as the main component, and the heat part 14 is composed of a person 3 as a metal and a varistor. The main body of the body In the same manner as in the first embodiment, the bonding strength between the varistor portion u and the heat dissipating portion 14 can be sufficiently ensured, and the external element is transmitted to the varistor via the external electrodes 12 and 13 . The heat of the portion 11 is transmitted through the conduction path and is efficiently discharged. The conduction path is formed from the surface 14a of the heat dissipation portion 14 over the surface 14b, the surface Me, and the surface 14d. [Third Embodiment] A varistor according to a third embodiment of the present invention will be described. Fig. 4 is a schematic cross-sectional view showing a varistor according to a third embodiment of the present invention. The heat dissipating portion 14 in the varistor V3 of Fig. 4 is more different from the varistor V2 of the second embodiment in that there is an enamel 31. Formed on the side of the face 14b that does not contact the varistor portion U
於該變阻器V3中’變阻器素體15亦以Zn〇為主成分，散 熱部14由作為金屬之Ag與包含作為變阻器素體Η之主成分 之ZnO的金屬氧化物之複合材料而形成。 此旎夠充分 地確保變阻器部丨丨與散熱部14之接合強度自外邛元件經 由外部電極12、13而傳至變阻器部u之熱量，於導:二 中傳遞’並被高效率地放出，上述導通路#係自散熱部二 之面14a遍及面14b、面14c、面14d而形成者。 [第4實施形態] 現對本發明之第4實施形態之變阻器 _ 1丁祝明。圖5係表 不本發明之第4實施形態之變阻器之概略 γ q甸圖。圖5所示 之變阻器V4與第3實施形態之變阻器V3爭也 尺两不同之處在 I30080.doc -14- 200903529 於：在形成於不與變阻 々k主工L a , 益口接觸之面14b側之瓷釉31之In the varistor V3, the varistor element body 15 is mainly composed of Zn 〇, and the heat radiating portion 14 is formed of a composite material of Ag as a metal and a metal oxide containing ZnO as a main component of the varistor element. In this case, the bonding strength between the varistor portion and the heat dissipating portion 14 is sufficiently ensured, and the heat transmitted from the outer dam member to the varistor portion u via the external electrodes 12 and 13 is transmitted and is efficiently discharged. The above-described guide passage # is formed from the surface 14a of the heat dissipating portion 2 over the surface 14b, the surface 14c, and the surface 14d. [Fourth embodiment] A varistor according to a fourth embodiment of the present invention is now _ 1 Ding Zhuming. Fig. 5 is a view showing the outline of a varistor according to a fourth embodiment of the present invention. The varistor V4 shown in FIG. 5 and the varistor V3 of the third embodiment are also different in the case of I30080.doc -14-200903529 in: being formed in contact with the varistor 々k main worker L a , 益口Porcelain 31 on the side of the face 14b
外表面上’更形成有外部電極AH 於變阻器V4中，藉由 11V, 、電極43來連接形成於變阻器部 11側之一方之外部電極12、 ^ 第1内邛電極21、以及形成於On the outer surface, an external electrode AH is formed in the varistor V4, and the external electrode 12 formed on one side of the varistor portion 11 and the first inner electrode 21 are formed by the electrode 43 and the electrode 43 is formed.
政熱部14側之一方之外A σ卩電極41，進而，藉由貫通電極44 f連接形成於變阻器部11側之他方之外部電極13、第2内 電極22、、以及形成於散熱部"側之他方之外部電極42。The A σ 卩 electrode 41 other than one of the sides of the tempering unit 14 is further connected to the external electrode 13 and the second internal electrode 22 formed on the varistor portion 11 side by the through electrode 44 f, and formed in the heat dissipating portion The other side of the external electrode 42.
於、』散熱。ΙΜ4之貫通電極43、44之周圍分別形成 有具有電絕緣性之層45。 於該變阻謂中，變阻器素體15亦以Ζη〇為主成分，散 —Μ 4由作為金屬之“與包含作為變阻器素體^之主成分 之ΖηΟ的金屬氧化物之複合材料而形成。因此，能夠充分 地確保變阻器部11與散熱部Μ之接合強度，自外部元件經 由外部電極12、13而傳遞至變阻器部η之熱量，於導通路 徑中傳遞，並被高效率地放出，上述導通路徑係自散熱部 14之面14a遍及面14c、面14d而形成者。 再者，於變阻器V4中，可將形成於變阻器部11側之外部 電極12、13作為外部元件之連接端，亦可將形成於散熱部 14側之外部電極41、42作為外部元件之連接端。 [第5實施形態] 現對本發明之第5實施形態之變阻器進行說明。圖6係表 示本發明之第5實施形態之變阻器之概略立體圖。圖6所示 之變阻器V5中之變阻器部50之構成與上述各實施形態不 同。亦即，變阻器V5於變阻器素體51内具有第1内部電極 130080.doc 15 200903529 52與第2内部電極53、以及第i散熱部54與第2散熱部η。 又，於變阻器素體51之一方之面51&上具有外部電極％、 51。 第1内部電極52及第2内部電極53分別具有平板部52a、 以及自平板部52a、53a之一方之端部朝變阻器素體 51之一方之面51a及他方之面51b突出的連接片5儿、5儿。 第1内電極52及第2内部電極53以使連接片52b、53b彼此 4於相反側之方式，而配置成炎持複數層之變阻器層，平 板邛52a、53a之大部分為彼此相對向之狀態。連接片 52b 53b之一方之前端部分，以露出至變阻器素體η之面 5 la之方式伸出；另一方之前端部分以露出至面5ib之方式 伸出。 第1散熱部54及第2散熱部55形成為厚於第i内部電極52 及弟2内。卩電極53之板狀，且以夾持第1内部電極52及第2 内部電極53之方式而大致平行地配置。第1散熱部54之寬 度方向之面54a、54b分別露出至變阻器素體51之面5U及 面lb長度方向之端面54c、54d分別露出至與.變阻器素 體5丨中之面51a及面51b垂直且彼此相對向的面弓^及面 51d。 同樣’第2散熱部55之寬度方向之面55a、5515分別露出 至變阻态素體51之面51a及面51b，長度方向之端面55c、 55d分別露出至與變阻器素體51中之面51a及面51b垂直且 相對向的面51c及面51d。 外部電極56、57以與第1内部電極52、第2内部電極53 ' 130080.doc -16· 200903529 第1散熱部54及第2散熱部55交又之方式，於變阻器素體51 之面51a上，沿面51c側之緣部及面5U側之緣部而分別形 成。外部電極56與第2内部電極53之連接片53b、第丨散熱 部54、及第2散熱部55電性且物理性地連接，外部電極57 與第1内部電極52之連接片似、第1散熱部54、及第2散熱 部5 5電性且物理性地連接。 再者於I阻器素體51之面51a上，在外部電極56、57 之間，襯墊電極58排列為例如3列x4行之矩陣狀。襯墊電 極58中，與外側之行（第〗行及第4行）相當之襯墊電極“連 接於第1散熱部54及第2散熱部55。 於該變阻器V5中，變阻器素體51亦以Zn〇為主成分，第 1散熱部54及第2散熱部55由作為金屬之八§與包含作為變阻 器素體51之主成分之Zn〇之金屬氧化物的複合材料而形 成。因此，能夠充分地確保變阻器部5〇與第【散熱部54及 第2散熱部55之接合強度，自外部元件經由外部電極兄、 57及襯墊電極58而傳遞至變阻器部5〇之熱量，於自第！散 熱部54之面54a遍及面54b、面54c、面54d而形成之導通路 徑中，以及自第2散熱部55之面55a遍及面55b、面55e、面 55d而形成之導通路徑中傳遞，並被高效率地放出。 [發光裝置] 繼而，對本發明之一實施形態之發光裝置進行說明。圖 7係表示本發明之一實施形態之發光裝置之概略剖面圖。 圖7所示之發光裝置1^具有例如上述之變阻器乂丨、及與該 變阻器vi電性連接之半導體發光元件61。 130080.doc 17 200903529 半導體發光元件61係GaN(氮化鎵）系半導體發光二極體 (LED : Light-Emitting Diode) ’ 其具有基板 62、與形成於 該基板62之層構造體LS。GaN系之半導體led已眾所周 知，因而簡化其說明。基板Μ係由藍寳石形成之光學性透 明且具有電絕緣性之基板。層構造體Ls包含積層之η型（第 1導電型）之半導體區域63、發光層64、以及ρ型（第2導電 型）之半導體區域65。半導體發光元件61藉由施加於η型之 半導體區域63與ρ型之半導體區域65之間之電壓而發光。 η型之半導體區域63包含η型之氮化物半導體而構成。於 本實施形態中，η型之半導體區域63係GaN於基板62上磊 晶成長而成，且添加有例如si等n型摻雜劑而具有η型之導 電性。又，η型之半導體區域63亦可具有使折射率小於發 光層64之折射率、且使能帶隙變大之組成。於該情形時， η型之半導體區域63對發光層64發揮作為下部包層之作 用。 發光層64藉由形成於η型之半導體區域63上、且自η型之 半導體區域63及ρ型之半導體區域65供給之載子（電子及電 洞）進行再結合，而於發光區域中產生光。可將發光層 設為例如於複數個週期中交替地積層有障壁層與阱層之多 重I子阱（MQW : Multiple Quantum WeU)結構。於該情形 日守障壁層及阱層由1nGaN形成，藉由適當選擇In(銦）之 、’且成，使障壁層之能帶隙大於阱層之能帶隙。發光區域於 發光層64中’產生於注入有載子之區域。 P型之半導體區域65包含p型之氮化物半導體而構成。於 130080.doc -18- 200903529 本實施形態中，P型之半導體區域6H^、AlGaN於發光層64 上Ba成長而成，且添加有例如Mg等p型摻雜劑而具有p 型之導電性。又，P型之半導體區域65亦可具有使折射率 小於發光層64之折射率、且使能帶隙變大之組成❶於該情 幵y時P型之半導體區域65對發光層64發揮作為上部包層 之作用。 於η型之半導體區域63上形成有陰極電極66。陰極電極 66由導電性材料形成，於與η型之半導體區域^之間實現 歐姆接觸。於ρ型之半導體區域65上形成有陽極電極67。 陽極電極67由導電性材料形成，於與ρ型之半導體區域“ 之間實現歐姆接觸。於陰極電極66及陽極電極67上形成有 凸塊電極68。 於上述構成之半導體發光元件61中，當在陽極電極 67(凸塊電極68)與陰極電極66(凸塊電極68)之間施加特定 之電壓，以使電流流動時，發光層64之發光區域會發光。 半導體發光元件61藉由凸塊而連接於外部電極丨^、13。 亦即，陰極電極66經由凸塊電極68而電性且物理性地連接 於外。卩電極1 2。陽極電極67經由凸塊電極68而電性且物理 眭地連接於外部電極13。藉此，變阻器ν丨並聯地連接於半 導體發光元件61。因此，藉由變阻器V1來保護半導體發光 元件61不受ESE)突波之影響。 如上所述，於變阻器V1中，散熱部14包含與作為變阻器 素體15之主成分之Zn〇相同之成分作為金屬氧化物，變阻 器素體15與散熱部14之構成成分共同。又，於鍛燒時，散 130080.doc -19- 200903529 …。卩14中所含之八§於面14a與面15b之界面附近，擴散至作 為變阻器素體15之主成分之ZnO之晶界中。藉此，牢固地 接合變阻器部U與散熱部14。 因此，於發光裝置LE*，自半導體發光元件61經 由外部 電極12、13而傳遞至變阻器部u之熱量，藉由粒子及Yu, "heat dissipation. A layer 45 having electrical insulation is formed around the through electrodes 43, 44 of the crucible 4, respectively. In the varistor, the varistor element body 15 is also mainly composed of Ζη〇, and the Μ-Μ 4 is formed of a composite material of a metal and a metal oxide containing ΖηΟ which is a main component of the varistor element. Therefore, the bonding strength between the varistor portion 11 and the heat dissipating portion 充分 can be sufficiently ensured, and the heat transmitted from the external element to the varistor portion η via the external electrodes 12 and 13 is transmitted to the conduction path, and is efficiently discharged, and the conduction is performed. The path is formed from the surface 14a of the heat radiating portion 14 over the surface 14c and the surface 14d. Further, in the varistor V4, the external electrodes 12 and 13 formed on the varistor portion 11 side can be used as the connection end of the external component. The external electrodes 41 and 42 formed on the side of the heat radiating portion 14 are the connecting ends of the external elements. [Fourth embodiment] A varistor according to a fifth embodiment of the present invention will now be described. Fig. 6 shows a fifth embodiment of the present invention. A schematic perspective view of the varistor of the varistor V5 shown in Fig. 6 is different from the above embodiments. That is, the varistor V5 has the first internal electric current in the varistor element body 51. The poles 13080.doc 15 200903529 52 and the second internal electrodes 53 and the i-th heat dissipation portion 54 and the second heat dissipation portion η. Further, the external electrodes % and 51 are provided on one of the surfaces 51 & of the varistor element body 51. Each of the internal electrode 52 and the second internal electrode 53 has a flat plate portion 52a and a connecting piece 5 which protrudes from one end portion of the flat plate portions 52a and 53a toward the one surface 51a of the varistor element body 51 and the other surface 51b. The first inner electrode 52 and the second inner electrode 53 are arranged so as to sandwich the varistor layer of the plurality of layers such that the connecting pieces 52b and 53b are opposite to each other, and most of the flat plates 52a and 53a are opposed to each other. The state in which the one end portion of the connecting piece 52b 53b protrudes to expose the surface 5 la of the varistor element body η; the other front end portion protrudes in such a manner as to be exposed to the face 5ib. The first heat radiating portion 54 The second heat radiating portion 55 is formed thicker than the i-th inner electrode 52 and the second inner portion 52. The tantalum electrode 53 has a plate shape and is disposed substantially in parallel so as to sandwich the first inner electrode 52 and the second inner electrode 53. The surfaces 54a and 54b in the width direction of the first heat radiating portion 54 are exposed to change. The surface 5U of the element body 51 and the end surfaces 54c and 54d of the surface lb length direction are respectively exposed to the face bow surface 51d perpendicular to the surface 51a and the surface 51b of the varistor element body 5, and facing each other. The faces 55a and 5515 in the width direction of the heat radiating portion 55 are exposed to the faces 51a and 51b of the rheostat body 51, respectively, and the end faces 55c and 55d in the longitudinal direction are exposed to the faces 51a and 51b of the varistor body 51, respectively. The vertical and opposing faces 51c and 51d. The external electrodes 56 and 57 are in contact with the first inner electrode 52 and the second inner electrode 53 '130080.doc -16· 200903529, the first heat radiating portion 54 and the second heat radiating portion 55. On the other hand, the surface 51a of the varistor element body 51 is formed along the edge portion on the surface 51c side and the edge portion on the surface 5U side. The external electrode 56 is electrically and physically connected to the connection piece 53b of the second internal electrode 53, the second heat dissipation portion 54, and the second heat dissipation portion 55, and the external electrode 57 is connected to the first internal electrode 52. The heat radiating portion 54 and the second heat radiating portion 55 are electrically and physically connected. Further, on the surface 51a of the I resistor body 51, between the external electrodes 56, 57, the pad electrodes 58 are arranged in a matrix of, for example, three columns x 4 rows. In the pad electrode 58, the pad electrode corresponding to the outer row (the row and the fourth row) is "connected to the first heat radiating portion 54 and the second heat radiating portion 55. In the varistor V5, the varistor element body 51 is also Zn 〇 is used as a main component, and the first heat dissipating portion 54 and the second heat dissipating portion 55 are formed of a composite material of a metal § which is a metal component of Zn 作为 which is a main component of the varistor element 51. The joint strength between the varistor portion 5 and the [heat radiating portion 54 and the second heat radiating portion 55 is sufficiently ensured, and the heat transmitted from the external element to the varistor portion 5 via the external electrode brother 57 and the pad electrode 58 is sufficient. The surface 54a of the heat dissipation portion 54 is transmitted through the conduction path formed by the surface 54b, the surface 54c, and the surface 54d, and the conduction path formed by the surface 55a of the second heat dissipation portion 55 over the surface 55b, the surface 55e, and the surface 55d. [Light-emitting device] Next, a light-emitting device according to an embodiment of the present invention will be described. Fig. 7 is a schematic cross-sectional view showing a light-emitting device according to an embodiment of the present invention. 1^ has a varistor such as described above乂And a semiconductor light-emitting device 61 electrically connected to the varistor vi. 130080.doc 17 200903529 The semiconductor light-emitting device 61 is a GaN (GaN-based semiconductor light-emitting diode) (LED) 62. The layer structure LS formed on the substrate 62. The GaN-based semiconductor led is well known, and the description thereof is simplified. The substrate is an optically transparent and electrically insulating substrate formed of sapphire. The layer structure Ls The semiconductor region 63 including the n-type (first conductivity type) laminated, the light-emitting layer 64, and the p-type (second conductivity type) semiconductor region 65. The semiconductor light-emitting element 61 is applied to the n-type semiconductor region 63 and ρ. The n-type semiconductor region 63 includes an n-type nitride semiconductor. In the present embodiment, the n-type semiconductor region 63-based GaN is epitaxially grown on the substrate 62. The n-type dopant is added to have an n-type conductivity such as Si, and the n-type semiconductor region 63 may have a refractive index smaller than that of the light-emitting layer 64 and an enable band. In this case, the n-type semiconductor region 63 functions as a lower cladding layer for the light-emitting layer 64. The light-emitting layer 64 is formed on the n-type semiconductor region 63 and from the n-type semiconductor region. 63 and the carrier (electron and hole) supplied from the p-type semiconductor region 65 are recombined to generate light in the light-emitting region. The light-emitting layer can be alternately laminated with a barrier layer and a well, for example, in a plurality of cycles. Layered multiple I-well (MQW: Multiple Quantum WeU) structure. In this case, the barrier layer and the well layer are formed of 1nGaN, and the band gap of the barrier layer is made by appropriately selecting In(in) Greater than the energy band gap of the well layer. The light-emitting region is generated in the light-emitting layer 64 in the region where the carrier is implanted. The P-type semiconductor region 65 is composed of a p-type nitride semiconductor. In the present embodiment, the P-type semiconductor region 6H^ and AlGaN are grown on the light-emitting layer 64, Ba is added with a p-type dopant such as Mg, and has p-type conductivity. . Further, the P-type semiconductor region 65 may have a composition in which the refractive index is smaller than the refractive index of the light-emitting layer 64 and the band gap is increased. In this case, the P-type semiconductor region 65 functions as the light-emitting layer 64. The role of the upper cladding. A cathode electrode 66 is formed on the n-type semiconductor region 63. The cathode electrode 66 is formed of a conductive material to achieve ohmic contact with the n-type semiconductor region. An anode electrode 67 is formed on the p-type semiconductor region 65. The anode electrode 67 is formed of a conductive material to achieve ohmic contact with the p-type semiconductor region. A bump electrode 68 is formed on the cathode electrode 66 and the anode electrode 67. Among the semiconductor light-emitting elements 61 configured as described above, A specific voltage is applied between the anode electrode 67 (bump electrode 68) and the cathode electrode 66 (bump electrode 68) so that when a current flows, the light-emitting region of the light-emitting layer 64 emits light. The semiconductor light-emitting element 61 is protruded by a bump. The cathode electrode 66 is electrically and physically connected to the outside via the bump electrode 68. The anode electrode 121. The anode electrode 67 is electrically and physically connected via the bump electrode 68. The varistor ν is connected in parallel to the semiconductor light emitting element 61. Therefore, the squeezing device V1 protects the semiconductor light emitting element 61 from the ESE) glitch. As described above, the varistor In V1, the heat dissipating portion 14 contains a component similar to Zn〇 which is a main component of the varistor element body 15 as a metal oxide, and the varistor element body 15 is formed together with the constituent components of the heat radiating portion 14. Further, during calcination散130080.doc -19- 200903529 .... 八 contained in 卩14 is in the vicinity of the interface between the surface 14a and the surface 15b, and diffuses into the grain boundary of ZnO which is the main component of the varistor element body 15. The varistor portion U and the heat dissipating portion 14 are joined to each other. Therefore, the heat transmitted from the semiconductor light emitting element 61 to the varistor portion u via the external electrodes 12 and 13 in the light emitting device LE* is controlled by particles and
Al2〇3之塗佈部而於導通路徑中傳遞，並被高效率地放 出上述導通路徑係自散熱部14之面14a遍及面14b、面 14c、面I4d而形成者。 [第6實施形態] 現對本發明之第6實施形態之變阻器進行說明。圖8係表 不本發明之第6實施形態之變阻器之概略剖面圖。圖8所示 之變阻器V6與第1實施形態之變阻器V1不同之處在於：分 別配置有複數個第丨内部電極、第2内部電極及第3内部電 極〇 亦即，變阻器V6與變阻器V1同樣，具有於變阻器素體 15之面15a上彼此隔出間隔而對稱配置之第i内部電極8iA 及第2内部電極82A，並且具有第3内部電極83八，該第3内 部電極83A夾持複數層之變阻器層，且以分別與第丨内部電 極81A及第2内部電極82A彼此相對向之方式，配置於變阻 器素體15内之大致中央部分。 又，於變阻器素體15内，在較第3内部電極83A更靠近散 熱部14側，以與第！内部電極81A、第2内部電極82八、及 第3内部電極83A同樣之位置關係，配置有第1内部電極 81B〜81D、第2内部電極82B〜82D、及第3内部電極 130080.doc -20- 200903529 83Β〜83C。第1内部電極81Α〜81D藉由貫通電極而彼此電 性連接，第2内部電極82A〜82D藉由貫通電極㈣彼此電 性連接。 於該變阻器V6中，變阻器素體15亦以Zn〇為主成分，散 熱部14由作為金屬之包含作為變阻器素體15之主成分 Zn〇之金屬氧化物的複合材料而形成。因&，能夠充分地 確保變阻器部U與散熱部14之接合強度，自外部元件經由 外部電極12、13而傳遞至變阻器部n之熱量，於導通路徑 中傳遞’並被高效率地放出，上述導通路徑係自散熱部" ί ( 之面14a遍及面14c、面I4d而形成者。 [第7實施形態] 現對本發明之第7實施形態之變阻器進行說明。圖9係表 不本發明之第7實施形態之變阻器之概略剖面圖。圖9所示 之變阻器V7與第2實施形態之變阻器V2不同之處在於：分 別配置有複數個第1内部電極及第2内部電極。 亦即，變阻器V7與變阻器…同樣不具備第3内部電極 18(參照圖2)，取而代之，具有以—端側彼此相對向地配置 於變阻器素體丨5内之第丨内部電極91八及第2内部電極 92A又，於變阻器素體15内，在較第ί内部電極ΜΑ更靠 近散熱部14側，以與第1内部電極91八及第2内部電極92a 同樣之位置關係，配置有第！内部電極91B、91C及第2内 部電極92B、MC。繼而，第！内部電極9ia〜9ic藉由貫通 電極93而連接於外部電極12，第2内部電極92A〜92c藉由 貫通電極94而連接於外部電極13。 130080.doc 21 200903529 於該變阻器V7中，變阻器素體15亦以Zn〇作為主成分， 散熱部14由作為金屬之Ag與包含作為變阻器素體μ之主成 分之ZnO的金屬氧化物之複合材料而形成。因此，能夠充 分地確保變阻器部11與散熱部14之接合強度，自外部元件 經由外部電極12、13而傳遞至變阻器部n之熱量，於導通 路徑中傳遞，並被高效率地放出，±料通路徑係自散熱 部14之面14a遍及面14b、面14c、面14d而形成者。 本發明並不限於上述實施形態。於上述各實施形態中， 作為變阻态素體15之主成分之半導體陶瓷，例示了 Zn〇， 但此種半導體陶瓷除了可使用Zn〇以外，還可使用The application portion of the Al2〇3 is transmitted through the conduction path, and the conduction path is efficiently formed by the surface 14a of the heat dissipation portion 14 over the surface 14b, the surface 14c, and the surface I4d. [Sixth embodiment] A varistor according to a sixth embodiment of the present invention will now be described. Fig. 8 is a schematic cross-sectional view showing a varistor according to a sixth embodiment of the present invention. The varistor V6 shown in FIG. 8 is different from the varistor V1 of the first embodiment in that a plurality of second internal electrodes, second internal electrodes, and third internal electrodes are disposed, that is, the varistor V6 is the same as the varistor V1. The i-th internal electrode 8iA and the second internal electrode 82A are disposed symmetrically with respect to each other on the surface 15a of the varistor element body 15 and have a third internal electrode 83, and the third internal electrode 83A sandwiches a plurality of layers The varistor layer is disposed substantially at the center of the varistor element body 15 so as to face the second inner electrode 81A and the second inner electrode 82A, respectively. Further, in the varistor element body 15, it is closer to the heat radiating portion 14 than the third inner electrode 83A, and the first! The internal electrodes 81A, the second internal electrodes 82, and the third internal electrodes 83A have the same positional relationship, and the first internal electrodes 81B to 81D, the second internal electrodes 82B to 82D, and the third internal electrodes 130080.doc -20 are disposed. - 200903529 83Β~83C. The first inner electrodes 81A to 81D are electrically connected to each other by the through electrodes, and the second inner electrodes 82A to 82D are electrically connected to each other by the through electrodes (four). In the varistor V6, the varistor element body 15 also contains Zn 〇 as a main component, and the heat radiating portion 14 is formed of a composite material containing a metal oxide as a main component of the varistor element body 15 as a metal oxide of the varistor element body 15. The bonding strength between the varistor U and the heat radiating portion 14 can be sufficiently ensured by the &, and the heat transmitted from the external element to the varistor portion n via the external electrodes 12 and 13 is transmitted to the conduction path and is efficiently discharged. The above-described conduction path is formed by the heat dissipating portion < ί (the surface 14a is formed over the surface 14c and the surface I4d. [Embodiment 7] A varistor according to a seventh embodiment of the present invention will now be described. Fig. 9 shows the present invention. A schematic cross-sectional view of the varistor according to the seventh embodiment is different from the varistor V2 of the second embodiment in that a plurality of first internal electrodes and second internal electrodes are disposed, respectively. Similarly, the varistor V7 and the varistor are not provided with the third internal electrode 18 (see FIG. 2), and instead have the second internal electrode 91 and the second internal electrode which are disposed opposite to each other in the varistor element 丨5 with the end side facing each other. Further, in the varistor element body 15, the varistor element body 15 is disposed closer to the heat radiating portion 14 than the first internal electrode ,, and the first internal electrode is disposed in the same positional relationship as the first inner electrode 91 and the second inner electrode 92a. The electrodes 91B and 91C and the second internal electrodes 92B and MC. Then, the first internal electrodes 9ia to 9ic are connected to the external electrode 12 via the through electrode 93, and the second internal electrodes 92A to 92c are connected to the outside through the through electrode 94. In the varistor V7, the varistor element body 15 also has Zn 〇 as a main component, and the heat dissipating portion 14 is made of a metal as Ag and a metal oxide containing ZnO as a main component of the varistor element μ. The composite material is formed. Therefore, the bonding strength between the varistor portion 11 and the heat dissipation portion 14 can be sufficiently ensured, and heat transferred from the external element to the varistor portion n via the external electrodes 12 and 13 is transmitted in the conduction path and is high. The material passage path is formed from the surface 14a of the heat radiating portion 14 over the surface 14b, the surface 14c, and the surface 14d. The present invention is not limited to the above embodiment. In each of the above embodiments, the variable resistance element is used. The semiconductor ceramic of the main component of the body 15 is exemplified by Zn〇, but the semiconductor ceramic can be used in addition to Zn〇.
SrTi03、BaTi03、及 SiC 等。 又，亦可藉由接著來接合變阻器部n與散熱部14。於變 阻器V1〜V7中，可連系之半導體led等GW系 以外之氮化物系半導體LED，亦可連接氮化物系以外之半 導體LED或LD(Laser Diode，雷射二極體）等。不限於 LED，亦可連接場效電晶體（FET)、雙極電晶體等於動作 中發熱之各種電子元件。 【圖式簡單說明】 圖1係表示本發明之第1實施形態之變阻器之概略立體 圖。 圖2係圖1所示之變阻器之概略剖面圖。 圖3係表示本發明之第2實施形態之變阻器之概略 圖。 。 圖4係表示本發明之第3實施形態之變阻器之概略剖面 130080.doc •22·SrTi03, BaTi03, and SiC. Further, the varistor portion n and the heat dissipation portion 14 may be joined next. In the varistor V1 to V7, a nitride-based semiconductor LED other than the GW-based semiconductor LED or the like may be connected to a semiconductor LED or a LD (Laser Diode) other than the nitride system. Not limited to LEDs, it is also possible to connect field effect transistors (FETs) and bipolar transistors to various electronic components that generate heat during operation. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic perspective view showing a varistor according to a first embodiment of the present invention. 2 is a schematic cross-sectional view of the varistor shown in FIG. 1. Fig. 3 is a schematic view showing a varistor according to a second embodiment of the present invention. . Figure 4 is a schematic cross-sectional view showing a varistor according to a third embodiment of the present invention 130080.doc • 22·
200903529 圖。 圖5係表示本發明之第4實施形態之變阻 圖。 圖6係表示本發明之第5實施形態之變阻 圖。 圖7係表示本發明之一實施形態之發光裝 圖。 圖8係表示本發明之第6實施形態之變阻 圖0 圖9係表示本發明之第7實施形態之變阻 圖。 【主要元件符號說明】 11 ' 50 變阻器部 12、13、41、42、 外部電極 56、57 14 散熱部 14a〜14d、15a~15d、 面 51 a〜51d、54a、54b、 55a、55b 15 變阻器素體 16、 21、52、 第1内部電極200903529 Picture. Fig. 5 is a view showing a varistor diagram of a fourth embodiment of the present invention. Fig. 6 is a varistor diagram showing a fifth embodiment of the present invention. Fig. 7 is a view showing an illuminating device according to an embodiment of the present invention. Fig. 8 is a view showing a varistor of a sixth embodiment of the present invention. Fig. 9 is a varistor diagram showing a seventh embodiment of the present invention. [Description of main component symbols] 11 ' 50 varistor sections 12, 13, 41, 42, external electrodes 56, 57 14 heat radiating portions 14a to 14d, 15a to 15d, surfaces 51 a to 51d, 54a, 54b, 55a, 55b 15 rheostat Element body 16, 21, 52, first internal electrode
81A-81D ' 91A-91C 17、 22、53、 第2内部電極81A-81D '91A-91C 17, 22, 53, 2nd internal electrode
82A~82D、92A〜92C 之概略剖面 之概略立體 之概略剖面 之概略剖面 之概略剖面 130080.doc -23- 200903529 18、83A〜83C 第3内部電極 19、31 瓷釉 19a、19b 開口部 23 貫通導體 43、44 ' 93、94 貫通電極 45 具有電絕緣性之層 52a ' 53a 平板部 52b ' 53b 連接片 54 第1散熱部 54c ' 54d ' 55c ' 55d 端面 55 第2散熱部 58 襯墊電極 61 半導體發光元件 62 基板 63 η型（第1導電型）之半導體區域 64 發光層 65 Ρ型（第2導電型）之半導體區域 66 陰極電極 67 陽極電極 68 凸塊電極 LE 發光裝置 LS 層構造體 VI 〜V7 變阻器 130080.doc -24-82A to 82D, 92A to 92C, a schematic cross section of a schematic cross section, a schematic cross section of a schematic cross section, a schematic cross section 130080.doc -23- 200903529 18, 83A to 83C, a third internal electrode 19, 31, an enamel 19a, 19b, an opening portion 23, a through conductor 43, 44 '93, 94 through electrode 45 electrically insulating layer 52a ' 53a flat portion 52b ' 53b connecting piece 54 first heat radiating portion 54c ' 54d ' 55c ' 55d end surface 55 second heat radiating portion 58 pad electrode 61 semiconductor Light-emitting element 62 Substrate 63 n-type (first conductivity type) semiconductor region 64 light-emitting layer 65 Ρ type (second conductivity type) semiconductor region 66 cathode electrode 67 anode electrode 68 bump electrode LE light-emitting device LS layer structure VI ~ V7 varistor 130080.doc -24-
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| JP2007134429A JP4888225B2 (en) | 2007-03-30 | 2007-05-21 | Varistor and light emitting device |
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| DE102012101606B4 (en) * | 2011-10-28 | 2024-11-21 | Tdk Electronics Ag | ESD protection component and component with an ESD protection component and an LED |
| KR101382363B1 (en) * | 2012-08-28 | 2014-04-08 | 주식회사 아모센스 | Method for manufacturing led package having varistor substrate and led package having varistor substrate thereby |
| DE102014101092B4 (en) * | 2014-01-29 | 2024-09-12 | Tdk Electronics Ag | Chip with protective function and method for manufacturing |
| KR20170109796A (en) * | 2016-03-22 | 2017-10-10 | 삼성전기주식회사 | Thermistor for piezoelectric device and piezoelectric device package including the same |
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| JPS63285907A (en) * | 1987-05-18 | 1988-11-22 | Matsushita Electric Ind Co Ltd | laminated ceramic varistor |
| JPH05275567A (en) * | 1992-03-26 | 1993-10-22 | Mitsubishi Materials Corp | Manufacture of ceramic circuit board for power module |
| JP3475910B2 (en) * | 2000-05-24 | 2003-12-10 | 株式会社村田製作所 | Electronic component, method of manufacturing electronic component, and circuit board |
| JP2002252136A (en) * | 2001-02-22 | 2002-09-06 | Matsushita Electric Ind Co Ltd | Multilayer electronic components |
| JP2004006686A (en) * | 2002-03-26 | 2004-01-08 | Sanyo Electric Co Ltd | Method of forming zinc oxide semiconductor layer, method of manufacturing semiconductor device, and semiconductor device |
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| US7279724B2 (en) * | 2004-02-25 | 2007-10-09 | Philips Lumileds Lighting Company, Llc | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
| JP2006086274A (en) * | 2004-09-15 | 2006-03-30 | Taiyo Yuden Co Ltd | Stacked varistor, mounting structure thereof, and varistor module |
| JP4915052B2 (en) * | 2005-04-01 | 2012-04-11 | パナソニック株式会社 | LED component and manufacturing method thereof |
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| JP4773755B2 (en) * | 2005-07-01 | 2011-09-14 | ローム株式会社 | Chip-type semiconductor light emitting device |
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| TWI399761B (en) | 2013-06-21 |
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