200908407 九、發明說明： 【發明所属之技術領域】 技術領域 、本發明係有關於_種有機薄膜電晶體用感光性樹脂組 成物=〜有關於_種使用於如有機薄膜電晶體或使用 -亥有機4膜電晶體之可撓式顯示器及〇led需要低溫硬化 矛序’貞7^器的層間絕緣膜及保護膜時，可於熱處理程序 時使剩餘溶劑量最少化，同時可藉由高硬化度確保耐熱性 及财化學穩定性的有機薄膜電晶體用感光性樹脂组成物。 10 背景技術 M itH器之大型化及販售價格持續降低之趨 勢不斷持續努力降低成本，亦活躍地進行利用有機物質 之元件的開發。 15 近來’有機薄膜電晶體（Organic Thin Film 細ist〇r ; 0TFT)之開發因顯示器之低價格化於經濟面 上較以現存無機半導體製作之元件有利，同時因有可賦予 兀件柔軟性之f點’預料可於實現可撓式顯示器方面擔任 核心之角色。然而，於可撓式顯示器元件製造程序中使用 2〇習知200t以上之高溫程序時，通道部所使用之有機半導體 的移動性會快速降低，產生塑膠基板之熱變形問題。 為解決此種問題，必須進行^代以下之低溫程序，但 於使用現存TFT-LCD所使用之層間絕緣膜用感光性樹脂組 成物時’會產生幾個問題。其主要原因係，現存之絕緣膜 200908407 係依據以2贼以上之高溫進彳t硬化之原理設心成，當硬 化溫度低㈣m 内無法揮發之殘存溶劑量變 多，該剩餘溶咖交聯仙基間之立體阻礙而成為使硬化 度降低的主要因素。如此’當有機絕緣膜之硬化度降低， 不僅會於導電性薄膜(_蒸鍍、配向膜塗布及硬化等各種 階段之熱處雌序帽熱性降低，特別會產生以後製程序 上使用之溶劑進行表面浸透造成_彡脹(sweuing)及接著力 降低等耐化學特性惡化之問題。 10 t 明内：2§1 ；J 發明揭示 發明所欲解決之課題 為解決此種習知技術問題，本發明目的係提供使用於 如有機薄膜電晶體或使用該有機薄膜電晶體之可換式顯示 器及OLED需要低溫硬化程序之顯示器的層間絕緣膜及保 15護膜時，可於熱處理程序時使剩餘溶劑量最少化，同時可 藉由高硬化度確保耐熱性及耐化學穩定性的有機薄膜電晶 體用感光性樹脂組成物、及利用該樹脂組成物之圖案形成 方法。 又，本發明亦提供含有有機薄膜電晶體用感光性樹脂 20組成物之硬化體的有機薄膜電晶體。 解決課題之手段 為達成則述目的，本發明係提供—種有機薄膜電晶體 用感光性樹脂組成物，包含有：a)玻璃轉移溫度(Tg)或炫融 溫度為9〇至uot之丙稀酸系共聚物'齡駿清漆樹脂及聚酿 200908407 亞胺Μ月日’ b)l，2-—叠氮化酿（i,2_qUin〇nediazide)化合物； 及c)沸點為90至150°C，於將n_BA(乙酸正丁酯）設為1時蒸發 速度為0.3至1_〇之溶劑。200908407 IX. Description of the Invention: [Technical Field] The present invention relates to a photosensitive resin composition for an organic thin film transistor, which is used in, for example, an organic thin film transistor or a use-- The flexible display of the organic 4-film transistor and the interlayer insulating film and the protective film of the low-temperature hardening lancer's 贞7^ device can minimize the amount of residual solvent during the heat treatment process, and can be hardened by high hardening. A photosensitive resin composition for an organic thin film transistor which ensures heat resistance and chemical stability. [Background Art] The trend of the increase in the size of the MitH device and the continuous reduction in the selling price has continued to reduce costs, and the development of components using organic substances has been actively carried out. 15 Recently, the development of 'Organic Thin Films' (Original Thin Films) has been favored by the low price of displays, which is more economical than the components made of existing inorganic semiconductors, and because of the softness of the elements. Point f is expected to play a central role in achieving flexible displays. However, when a high-temperature program of 200 t or more is used in the manufacturing process of the flexible display element, the mobility of the organic semiconductor used in the channel portion is rapidly lowered, causing thermal deformation of the plastic substrate. In order to solve such a problem, it is necessary to carry out the following low-temperature process, but there are several problems when using a photosensitive resin composition for an interlayer insulating film used in an existing TFT-LCD. The main reason is that the existing insulating film 200108407 is based on the principle of high temperature and hardening of 2 thieves. When the hardening temperature is low (four) m, the amount of residual solvent that cannot be volatilized becomes more, and the remaining solvent crosses the fairy base. The steric hindrance between them becomes a major factor in reducing the degree of hardening. Thus, when the degree of hardening of the organic insulating film is lowered, not only the thermal conductivity of the conductive film (the vapor deposition, the alignment film coating, and the hardening, but also the heat of the female cap) is lowered, and the solvent used in the subsequent process is particularly generated. Surface impregnation causes problems such as deterioration of chemical resistance such as swelling and lowering force. 10 t In the following: 2 § 1 ; J The invention proposes to solve the problem of the prior art, the present invention The object is to provide an amount of residual solvent in a heat treatment process when an interlayer insulating film such as an organic thin film transistor or a replaceable display using the organic thin film transistor and a display of an OLED requiring a low temperature hardening process is provided. A photosensitive resin composition for an organic thin film transistor which is excellent in heat resistance and chemical stability by a high degree of hardening, and a pattern forming method using the resin composition. Further, the present invention also provides an organic thin film. An organic thin film transistor of a hardened body of a composition of a photosensitive resin 20 for a crystal. The means for solving the problem is achieved by the purpose of the present invention. The company provides a photosensitive resin composition for an organic thin film transistor, which comprises: a) a glass transition temperature (Tg) or an acrylic copolymer having a smelting temperature of 9 〇 to uot, and an ageing varnish resin and poly Stuffed 200908407 imine Μ月日' b) l,2-- azimuth (i,2_qUin〇nediazide) compound; and c) boiling point of 90 to 150 ° C, set n_BA (n-butyl acetate) At 1 o'clock, the evaporation rate is 0.3 to 1 〇 solvent.
1515
則述有機薄膜電晶體用感光性樹脂組成物，宜包含 有· a)玻璃轉移溫度(Tg)或熔融溫度為卯至丨仙艽之丙烯酸 系共聚物、酚醛清漆樹脂及聚醯亞胺樹脂1〇〇重量份；b)1,2_ —疊氮化醌化合物5至50重量份；及幻沸點為卯至丨別^， 將n-BA(乙酸正丁 g旨）設為丨時蒸發速度為〇 3至ι 〇，且使前 述a) + b)之固體部分含量為1()至％重量％之溶劑。 ，又’本發明亦提供一種利用前述有機薄膜電晶體用感 光性樹脂組成物之有機薄膜電晶體關案形成方法。 “又’本發明亦提供-種含有前述有機薄膜電晶體用感 先性樹脂組成物之硬化體的有機薄膜電晶體。 ㈤本發月之有機相電晶體用感光性樹脂組成物 ，於低 件下硬化度優異’特別是於⑽赃之低溫程 適八"^更化度而具有優異之耐熱性及耐化學特性 ，不僅 為*低/皿程序之有機薄犋電晶體(〇㈣)的層 間絕緣 晶體之可撓式顯示器及 、亦可作為使用該有機薄膜電 LED用層間絕、緣膜使用。 【貧施方式】 實施發明之最佳形態 以下，詳細說明本發明。 本發明之有機薄膜電晶體用感光性樹脂組成物，包含 20 200908407 有：a)玻璃轉移溫度(Tg)或溶融溫度為9〇至140°C之丙烯酸 系共聚物、酚醛清漆樹脂或聚醯亞胺樹脂；b)l,2-二疊氮化 酿化合物；及c)沸點為90至150。(：，於將n-BA(乙酸正丁醋） 設為1時蒸發速度為0.3至1.0之溶劑。 5 本發明之有機薄膜電晶體用感光性樹脂組成物中，前 述a)玻璃轉移溫度(Tg)或炼融溫度為9〇至mo°c之丙浠酸系 共聚物、酚醛清漆樹脂或聚醯亞胺樹脂具有可於顯像時輕 易形成圖案的功能。前述共聚物或樹脂係選自於由玻璃轉 移溫度(Tg)或熔融溫度為卯至^^匚之丙烯酸系共聚物、酚 10醛清漆樹脂及聚醯亞胺樹脂，前述丙烯酸系共聚物、酚醛 清漆樹脂及聚醯亞胺樹脂係玻璃轉移溫度(Tg)或熔融溫度 為90至14G°C，可藉眾所周知的製造方法製造。以丙稀酸系 共聚物較佳。 舉-具體例，可將不飽和舰、不飽和叛酸針或該等 15之混合物與烯烴系化合物作為單體，於溶劑及聚合起始劑 之存在下，進行自由基反應，以得到丙稀酸系共聚物。以 更含有將包含有環氧基之不飽和化合物作為單體為佳。 前述丙_系共聚物之共聚合時所使用之不飽和叛 酸，可使用丙烯酸、甲基丙烯酸、亞甲基丁二酸、順丁稀 20二酸、反丁烯二酸、乙酸乙§旨、或該等之岐形態等。 又，本發明中於共聚合時使用之烯煙系不飽和化合物 有：甲基丙烯酸甲醋、甲基丙烯酸乙醋、甲基丙稀酸正丁 醋、甲基丙烯酸二級丁能、甲基丙烯酸三級丁醋、甲基丙 稀酸環己醋、甲基丙稀酸二環戊酷(die#-— 200908407 methacrylate)、丙稀酸環己酯、丙烯酸異莰酯（is〇b〇rnyl acrylate)、曱基丙稀酸異获醋（is〇b〇rnyl acrylate)、曱基丙稀 酸苯酯、丙烯酸苯酯、丙烯酸苯甲酯、甲基丙烯酸苯曱酿、 苯乙烯、α-曱基苯乙烯、m_曱基苯乙烯、p-甲基苯乙烯等， 5 可單獨或混合2種以上使用。 又’於本發明共聚合時使用之可視需要包含的包含有 環氧基之不飽和化合物有：丙烯酸環氧丙酯、甲基丙烯酸 環氧丙酯、甲基丙烯酸-点―甲基環氧丙酯、甲基丙烯酸_6,7_ 環氧庚酯、〇-乙烯基苯曱基環氧丙基醚、m_乙烯基笨甲基 10環氧丙基醚、P-乙烯基苯甲基環氧丙基醚等，可單獨或混 合2種以上使用。 於製造丙稀酸系共聚物時，相對於全體總單體，前述 不飽和羧酸或其酸酐為5〜9〇重量％，以使用5〜4〇重量％為 佳，較佳者是，使用1〇〜3〇重量％。當於前述範圍内時，可 15適當地維持相對於鹼性顯像液之溶解度。 又，相對於全體總單量，前述烯烴系不飽和化合物以 10〜95重量％為佳，較佳者是，使用2()〜％重量％。當前述稀 烴系不飽和化合物之使用量於前述範圍内時，可提升保存 穩定性，並適當地維持對顯像液之溶解性。 20 X ’相對於全體總單*，前述包含有J袁氧基之不飽和 化口物以使用〇〜7〇重量％為佳較佳者是，使用〇〜6〇重量 /〇田則述包含有環氧基之不飽和化合物之使用量大於70 重篁％時，會降低共聚物之保存穩定性。 可使用自由基聚合起始劑作為製造前述丙烯酸系共聚 9 200908407 物所使用之聚合起始劑，具體之例可舉例如：可使用2 2, 偶氮雙異丁腈、2,2’-偶氮雙(2,4_二曱基戊腈）、2,2，_偶氮雔 (4-曱氧2,4-二曱基戊腈）、u，_偶氮雙（環己烷_丨甲腈）、: 甲基2,2’-偶氮雙異丁酸酯等；前述溶劑可使用例如：丙— 5醇一乙基醚乙酸酯、乙氧丙酸乙酯、乙酿τ 义〗酉旨 (butylacetate)、乙二醇_曱基醚乙酸酯、丙二醇—甲美醚 丙二醇甲基喊乙酸@旨、二乙二醇二甲基趟、二乙二醇甲武 乙基醚、環己酮、3_甲氧丙酸乙醋、或3-乙氧丙酉楚甲酉旨等土， 特別可使用丙二醇一乙基醚、乙氧丙酸乙酯、或乙酸丁酽 10 (butylacetate)。 θ 本發明中使用之丙烯酸系共聚物或樹脂，以聚苯乙烯 換算重量平均分子量（Mw)為5,000〜30,000為佳，γ 5,000〜20,000較佳。當前述^1〜小於5,〇〇〇時所得之祺，會有 顯像性、殘膜率等降低、或圖案形狀、财熱性等劣化的^ 15題；而在大於30,〇〇〇時則會有感度降低或圖案形狀 問題。 ’ 本發明之前述a)共聚物或樹脂的玻璃轉移溫度(丁幻戈 溶融溫度（softening溫度（軟化溫度))為9〇至14(TC，以9〇〜12〇 °C為佳。當前述溫度小於90°C時，圖案特性、殘膜率等會 20降低’特別是耐熱性會劣化，當大於140。(：時，會有硬化度 不佳、耐化學性及與下部膜之接著力下降的問題。 本發明所使用之前述b)l,2-二疊氮化醌化合物係作為 感光性化合物使用。前述1,2-二疊氮化醌化合物，係可使 用1,2-二疊氮化醌-4-磺酸酯、1，2-二疊氮化醌_5_磺酸酯、 200908407 或1,2-二疊氮化醌-6-磺酸酯等。 此種二疊氮化醌化合物可在弱鹼的存在下使二疊氮化 萘酿績酸ii化物與酌·化合物反應而製造。 前述酚化合物可使用2,3,4-三羥基二苯甲酮、2,4,6-三 5 羥基二苯曱酮、2,2’-四羥基二苯甲酮、4,4’-四羥基二苯甲 酮、2,3,4,3’-四羥基二苯曱酮、2,3,4,4’-四羥基二苯甲酮、 2,3,4,2，-四羥基4’-甲基二苯甲酮、2,3,4,4，-四羥基3’-甲氧 二苯甲酮、2,3,4,2’-五羥基二苯曱酮、2,3,4,6’-五羥基二苯 甲酮、2,4,6,3’-六羥基二苯甲酮、2,4,6,4’-六羥基二苯甲酮、 10 2,4,6,5-六羥基二苯甲酮、3,4,5,3’-六羥基二苯甲酮、3,4,5,4’- 六羥基二苯甲酮、3,4,5,5’-六羥基二苯甲酮、雙(2,4-二羥基 苯基）曱烷、雙(P-羥基苯基）甲烷、三(P-羥基苯基）曱烷、 1,1,1-三(p-羥基苯基）乙烷、雙(2,3,4-三羥基苯基）甲烷、2,2-雙(2,3,4-三羥基苯基）丙烷、1,1,3-三(2,5-二甲基4-羥基苯 15 基)-3 -苯基丙烧、4,4’ - [ 1 - [4-[ 1 - [4-輕基苯基]-1-甲基乙基]苯 基]亞乙基]雙酚、或雙(2,5-二甲基4-羥基苯基)-2-羥基苯基 甲烷等，且可單獨或混合2種以上使用前述化合物。 以如此之酚化合物與二疊氮化萘醌磺酸画化物合成二 疊氮化醌化合物時，酯化度以50〜90%為佳。當前述酯化度 20 於前述範圍内時，殘膜率會變佳，並提升保存穩定性。 相對於前述a)共聚物或樹脂100重量份，前述1,2-二疊 氮化醌化合物以含有5〜50重量份為佳，較佳者是含有10〜40 重量份。當其含量小於5重量份時，曝光部與非曝光部之溶 解度差會變小而難以形成圖案；當大於50重量份時，則會 11 200908407 在短時間照射光時，大量殘留未反應之1，2-二疊氮化醌化合 物，且使得對顯像液之鹼水溶液的溶解度變得過低，而有 難以顯像的問題。 I發明之有機薄膜電晶體 的前述c)溶劑係沸點為卯至丨如它，於將n_BA(乙酸正丁酯） 設為1時蒸發速度為0.3至1.0的低沸點高揮發性溶劑。前述 瘵發速度係表示以依據揮發性液體之蒸發速率標準試驗法 ASTM D3539_87(1996)的殼式薄膜蒸發計（shdi 了恤_咖 10 15 20 ―刪㈣進行測定時，將ΜΑ(乙酸正丁醋）設為i，並 相對地表示測定之溶劑蒸發量的值。 月J述/分片|J之,弗點以u〇J_14(rc為佳。當於前述範圍内 時，即使純溫硬化條件™純、魏學性及_ 性優異，可提高有機薄膜電晶體之可靠性。 具體而言，前述溶劑可單獨或混合2種以上使用例如·· 丙二醇甲基鍵乙酸龍 '兩二醇乙基趟乙酸酿、或丙二醇丙 基醚乙酸醋等丙二醇燒基鱗乙酸醋類；丙二醇甲基鍵、丙The photosensitive resin composition for an organic thin film transistor preferably includes a) a glass transition temperature (Tg) or an acrylic copolymer having a melting temperature of from 卯 to 丨 艽, a novolac resin, and a polyimide resin 1 〇〇 parts by weight; b) 1, 2_ - 5 to 50 parts by weight of the azide compound; and the magic boiling point is 卯 to ^ ^, when n-BA (n-butyl acetate) is set to 丨, the evaporation rate is 〇3 to ι 〇, and the solid content of the aforementioned a) + b) is 1 () to % by weight of the solvent. Further, the present invention also provides an organic thin film transistor forming method using the photosensitive resin composition for an organic thin film transistor. Further, the present invention also provides an organic thin film transistor containing a hardened body of a precursor resin composition for an organic thin film transistor. (5) A photosensitive resin composition for an organic phase transistor of the present month, in a low part Excellent under-hardening degree, especially in the low-temperature process of (10) 赃, which has excellent heat resistance and chemical resistance, not only for the organic low-thin crystals of the *low/dish program (〇(四)) A flexible display of an interlayer insulating crystal and a layered insulating film for use in the organic thin film electrical LED. The preferred embodiment of the invention will be described in detail below. The organic thin film of the present invention will be described in detail. A photosensitive resin composition for a transistor comprising 20 200908407 having: a) an acrylic copolymer having a glass transition temperature (Tg) or a melting temperature of 9 to 140 ° C, a novolak resin or a polyimide resin; b) a 1,2-diazide granulated compound; and c) a boiling point of from 90 to 150. (:, a solvent having an evaporation rate of 0.3 to 1.0 when n-BA (n-butyl acetate) is set to 1. 5 Photosensitive resin for organic thin film transistor In the case of the above, a) a glass transition temperature (Tg) or a propionic acid copolymer having a melting temperature of 9 〇 to mo ° c, a novolak resin or a polyimide resin having a pattern which can be easily formed during development The copolymer or the resin is selected from the group consisting of an acrylic copolymer having a glass transition temperature (Tg) or a melting temperature of from 卯 to 匚, a phenol 10 aldehyde varnish resin, and a polyimine resin, and the aforementioned acrylic copolymerization. The material, the novolak resin, and the polyimide resin have a glass transition temperature (Tg) or a melting temperature of 90 to 14 G ° C and can be produced by a known production method. The acrylic copolymer is preferred. The unsaturated ship, the unsaturated tick acid needle or the mixture of the 15 and the olefin compound can be subjected to a radical reaction in the presence of a solvent and a polymerization initiator as a monomer to obtain an acrylic copolymer. It is preferable to further contain an unsaturated compound containing an epoxy group as a monomer. The unsaturated tarenic acid used in the copolymerization of the above-mentioned C-based copolymer may be acrylic acid, methacrylic acid or methylene chloride. Diacid, cis-butyl 20 acid Further, the olefinic unsaturated compounds used in the copolymerization in the present invention include methyl methacrylate and ethyl methacrylate, and the like. Methyl acrylate n-butyl vinegar, methacrylic acid secondary butyl ketone, methacrylic acid tertiary butyl vinegar, methyl propylene dicyclohexan vinegar, methyl acrylate dicyclopentanol (die#-- 200908407 methacrylate ), cyclohexyl acrylate, is〇b〇rnyl acrylate, is〇b〇rnyl acrylate, phenyl acrylate, phenyl acrylate And benzyl acrylate, benzoyl methacrylate, styrene, α-mercaptostyrene, m-mercaptostyrene, p-methylstyrene, etc., 5 may be used alone or in combination of two or more. Further, the epoxy group-containing unsaturated compound which is optionally used in the copolymerization of the present invention may be: glycidyl acrylate, glycidyl methacrylate, methacrylic acid-dot methyl methacrylate Ester, methacrylic acid _6,7_ epoxyheptyl ester, fluorene-vinyl benzoyl epoxy propyl ether, m_vinyl benzyl 10-epoxypropyl ether, P-vinyl benzyl epoxy For example, propyl ether or the like may be used alone or in combination of two or more. When the acrylic acid copolymer is produced, the unsaturated carboxylic acid or its anhydride is 5 to 9 % by weight based on the total monomer, preferably 5 to 4 % by weight, more preferably, 1〇~3〇% by weight. When it is within the above range, the solubility with respect to the alkaline developing solution can be appropriately maintained. Further, the olefin-based unsaturated compound is preferably 10 to 95% by weight based on the total amount of the total amount, and preferably 2 () to % by weight. When the amount of the above-mentioned dilute hydrocarbon-based unsaturated compound is within the above range, the storage stability can be improved and the solubility to the developing solution can be appropriately maintained. 20 X 'with respect to the total order sheet*, it is preferable that the above-mentioned unsaturation of the J-oxyl group is used in an amount of 〇~7〇% by weight, and 〇~6〇 weight/〇田 is included. When the amount of the epoxy group-containing unsaturated compound is more than 70% by weight, the storage stability of the copolymer is lowered. A radical polymerization initiator can be used as the polymerization initiator used for the production of the above-mentioned acrylic copolymer 9 200908407, and specific examples thereof include 2 2, azobisisobutyronitrile, 2,2'-couple. Nitrogen bis(2,4-dihydrazyl valeronitrile), 2,2, azobis(4-oxo 2,4-dimercapto valeronitrile), u, azobis(cyclohexane 丨Formaldehyde), methyl 2,2'-azobisisobutyrate, etc.; the above solvent can be used, for example, propylene glycol monoethyl ether acetate, ethyl ethoxypropionate, 〖"butylacetate", ethylene glycol _ mercapto ether acetate, propylene glycol - methyl ketone propylene glycol methyl ketone acetic acid @ zhi, diethylene glycol dimethyl hydrazine, diethylene glycol methyl ketone ethyl ether, cyclohexyl A ketone, a 3-methoxypropionic acid ethyl acetonate, or a 3-ethoxy propyl phthalocyanine or the like can be used, and in particular, propylene glycol monoethyl ether, ethyl ethoxypropionate or butylacetate can be used. θ The acrylic copolymer or resin used in the present invention preferably has a weight average molecular weight (Mw) of 5,000 to 30,000 in terms of polystyrene, and preferably γ 5,000 to 20,000. When the above-mentioned ^1~ is less than 5, the enthalpy obtained in the case of 〇〇〇, there is a problem that the development property, the residual film ratio, etc. are lowered, or the pattern shape, the heat and the like are deteriorated; and when it is greater than 30, 〇〇〇 There will be problems with reduced sensitivity or pattern shape. The glass transfer temperature (softening temperature (softening temperature)) of the copolymer or resin of the aforementioned a) of the present invention is from 9 Å to 14 (TC, preferably from 9 Torr to 12 Torr ° C. When the temperature is less than 90 ° C, the pattern characteristics, the residual film ratio, and the like are lowered by 20', in particular, the heat resistance is deteriorated, and when it is more than 140 ((:, there is a poor degree of hardening, chemical resistance, and adhesion to the lower film). The above-mentioned b) 1,2-diazide yttrium compound used in the present invention is used as a photosensitive compound. The above-mentioned 1,2-diazide yttrium compound can be used as a 1,2-double stack. Bismuth nitride-4-sulfonate, 1,2-diazide-5-sulfonate, 200908407 or 1,2-diazide-6-sulfonate, etc. The ruthenium compound can be produced by reacting a diazide naphthalene acid acid ii compound with a compound in the presence of a weak base. The phenol compound can use 2,3,4-trihydroxybenzophenone, 2, 4 ,6-tris 5-hydroxydibenzophenone, 2,2'-tetrahydroxybenzophenone, 4,4'-tetrahydroxybenzophenone, 2,3,4,3'-tetrahydroxydibenzophenone , 2,3,4,4'-tetrahydroxybenzophenone, 2,3,4 , 2,-tetrahydroxy 4'-methylbenzophenone, 2,3,4,4,-tetrahydroxy 3'-methoxybenzophenone, 2,3,4,2'-pentahydroxydiphenyl Anthrone, 2,3,4,6'-pentahydroxybenzophenone, 2,4,6,3'-hexahydroxybenzophenone, 2,4,6,4'-hexahydroxybenzophenone , 10 2,4,6,5-hexahydroxybenzophenone, 3,4,5,3'-hexahydroxybenzophenone, 3,4,5,4'-hexahydroxybenzophenone, 3 , 4,5,5'-hexahydroxybenzophenone, bis(2,4-dihydroxyphenyl)decane, bis(P-hydroxyphenyl)methane, tris(P-hydroxyphenyl)decane, 1,1,1-tris(p-hydroxyphenyl)ethane, bis(2,3,4-trihydroxyphenyl)methane, 2,2-bis(2,3,4-trihydroxyphenyl)propane 1,1,3-Tris(2,5-dimethyl-4-hydroxyphenyl15-yl)-3-phenylpropanin, 4,4'-[1-[4-[1-[4-light-based Phenyl]-1-methylethyl]phenyl]ethylidene]bisphenol, or bis(2,5-dimethyl-4-hydroxyphenyl)-2-hydroxyphenylmethane, etc., and may be used alone or When the above-described compound is used in combination of two or more kinds, the degree of esterification is preferably from 50 to 90% when the bismuth subnitride compound is synthesized from the phenol compound and the naphthoquinone sulfonate sulfonate. When the degree of esterification is 20 Before When the range is within, the residual film ratio is improved, and the storage stability is improved. The above-mentioned 1,2-diazide compound is preferably contained in an amount of 5 to 50 parts by weight based on 100 parts by weight of the above a) copolymer or resin. Preferably, it contains 10 to 40 parts by weight. When the content is less than 5 parts by weight, the difference in solubility between the exposed portion and the non-exposed portion becomes small and it is difficult to form a pattern; when it is more than 50 parts by weight, it will be 11 200908407 When the light is irradiated for a short period of time, a large amount of unreacted 1,2-diazide ruthenium compound remains, and the solubility in the aqueous alkali solution of the developing solution becomes too low, and there is a problem that it is difficult to develop. The above-mentioned c) solvent of the organic thin film transistor of the invention has a boiling point of from 卯 to 丨, such as a low boiling high volatility solvent having an evaporation rate of 0.3 to 1.0 when n_BA (n-butyl acetate) is set to 1. The aforementioned bursting speed is expressed by a shell-type thin film evaporation meter (shdi _ _ 10 10 20 ― ( (4) according to the evaporation rate standard test method of the volatile liquid ASTM D3539_87 (1996), Vinegar) is set to i, and relatively indicates the value of the measured solvent evaporation amount. Month J / fragment | J, the point is u 〇 J_14 (rc is better. When within the above range, even pure hardening The condition TM is excellent in purity, Wei Xue and _, and can improve the reliability of the organic thin film transistor. Specifically, the above solvent can be used alone or in combination of two or more kinds of, for example, propylene glycol methyl bond acetic acid dragon 'didiol B Propylene glycol sulphuric acid vinegar such as acetic acid or propylene glycol propyl ether acetate; propylene glycol methyl bond, C
二醇乙基醚、丙二L 丙基醚、或丙二醇丁基醚等丙二醇一 烧基鍵類；乙酸正丁能。宜使用丙二醇—乙基乙賴、丙 二醇一曱基醚、乙酸正丁酯等。 則述浴劑以使全體有機薄膜電晶體用感光性樹脂組成 物之固體抑含量(aKb))為職㈣量％地包含者為佳， 較佳者疋，使成為15至4G重量％地包含。當前述全體組成 物之固體部分含量小於1G重量％時，會有㈣厚度變薄、 塗布平坦陡降低的問題；當大於5〇重量％時會有塗布厚 12 200908407 度變厚，且於塗布時過度勉強塗布裝備之問題。 又，本發明之有機薄膜電晶體用感光性樹脂組成物可 視需要添加光敏劑、界面活性劑、熱聚合抑制劑、消泡劑 等具有相溶性的添加劑，含量可分別使用0.001至10重量％。 5 由前述成分構成之本發明有機薄膜電晶體用感光性樹 脂組成物，以0.1〜0.2/z m之Millipore過濾器等過濾後再使用 為佳。 又，本發明係提供使用前述有機薄膜電晶體用感光性 樹脂組成物之有機薄膜電晶體的圖案形成方法、及含有有 10 機薄膜電晶體用感光性樹脂組成物之硬化體的有機薄膜電 晶體，本發明有機薄膜電晶體之圖案形成方法的特徵係， 於將有機薄膜電晶體用感光性樹脂組成物作為有機絕緣膜 或保護膜材料以形成有機薄膜電晶體用基板之圖案形成方 法中，使用前述有機薄膜電晶體用感光性樹脂組成物。 15 本發明之有機薄膜電晶體用感光性樹脂組成物，可用 於通常形成顯示器之圖案的方法。舉一具體例，可將前述 有機薄膜電晶體用感光性樹脂組成物以喷霧法、輥塗布 法、旋轉塗布法等塗布於有機薄膜基板表面，並藉由預烤 以去除溶劑，形成塗布膜。此時，前述預烤以80〜120°C之 20 溫度實施1〜15分鐘為佳。 其後，藉由預先準備的圖案將可見光線、紫外線、遠 紫外線、電子束、X光等照射於前述形成有塗布膜上，並 以顯像液顯像去除不必要的部分，藉此形成預定的圖案。 此時，硬化溫度以80至150°C為佳。 13 200908407 前述顯像液以使用鹼水溶液為佳，具體而言可使用氫 氧化鈉、氫氧化鉀、碳酸鈉等無機鹼類；乙基胺、正丙基 胺等一級胺類；二乙基胺、正丙基胺等二級胺類；三甲基 胺、曱基二乙基胺、二曱基乙基胺、三乙基胺等三級胺類； 5 二甲基乙醇胺、甲基二乙醇胺、三乙醇胺等醇胺類；或四 甲基銨氫氧化物、四乙基銨氫氧化物等四級銨鹽之水溶液 等。此時，前述顯像液係將鹼性化合物溶解成0.1〜10重量 %之濃度使用，且亦可以適當量添加如甲醇、乙醇等之水 溶性有機溶劑及界面活性劑。 10 再者，以如此的顯像液顯像後，用超純水洗滌30〜90 秒以去除不必要的部分，並乾燥形成圖案，藉由烘箱等加 熱裝置以80〜150°C之溫度加熱處理前述圖案30〜90分鐘， 可得最終之圖案。 以下，揭示較佳實施例以理解本發明，但以下實施例 15 僅為例示本發明者，且本發明之範圍未受以下實施例所限 制。 [實施例] 實施例1 (製造丙烯酸系共聚物） 20 於具有冷凝管與攪拌器的錐型瓶中加入2,2’-偶氮雙 (2,4-二曱基戊腈）10重量份、四羥基呋喃600重量份、甲基 丙烯酸30重量份、甲基丙烯酸環氧丙酯30重量份、苯乙 烯20重量份、及甲基丙烯酸異莰酯20重量份，進行氮氣 置換後，緩慢地攪拌。使前述反應溶液升溫至60°C，且一 14 200908407 • 邊維持此溫度26小時，一邊製造包含丙烯酸系共聚物之聚 合物溶液。 為了去除聚合物溶液之未反應單體，以相對於不良溶 劑（Poor Solvent)之正己烧(n — hexane)10,000重量份，沉澱 5 前述聚合物溶液1,000重量份。沉澱後，藉由利用篩網(mesh) 之過漉（filtering)程序去除溶解有未反應物的不良溶劑。之 後，為去除含有於過濾程序後仍殘留之未反應單體的溶 劑，藉於30°C以下進行真空乾燥，而完全去除，以製造丙 f 烯酸系共聚物。前述所製造之丙烯酸系共聚物之玻璃轉移 10 溫度為97°C。 (製造有機薄膜電晶體用感光性樹脂組成物） 混合前述所製造的丙烯酸共聚物100重量份，與 4,4'-[1-[4-[1-[4-羥基苯基]-1-曱基乙基]苯基]亞乙基]雙酚 1,2-二疊氮化萘醌-5-磺酸酯20重量份，並以丙二醇一乙基 15 乙酸酯使其溶解，使前述混合物之固體部份含量成為30重 量％，並以0.2//m之Millipore過濾器過濾，以製造有機薄 膜電晶體用感光性樹脂組成物。 實施例2 於製造前述實施例1之丙烯酸系共聚物時，使用曱基丙 20 烯酸30重量份、甲基丙烯酸異莰酯60重量份、甲基丙烯酸 二環戊酯10重量份，製造玻璃轉移溫度為117°C之丙烯酸系 共聚物，除了使用丙二醇一甲基醚作為電晶體用感光性樹 脂重物之溶劑以外，實施與實施例1相同之方法，以製造有 機薄膜電晶體用感光性樹脂組成物。 15 200908407 實施例j· 於製造前述實施例1之丙烯酸系共聚物時，使用甲基兩 烯酸25重量份、曱基丙烯酸環氧丙酯25重量份、甲基丙烯 酸異莰酯15重量份、曱基丙稀酸二環戊酯35重量份，製造 5玻璃轉移溫度為13〇°C之丙婦酸系共聚物，除了使用乙酸正 丁酯作為電晶體用感光性樹脂重物之溶劑以外，實施與實 施例1相同之方法，以製造有機薄膜電晶體用感光性樹脂系且 成物。 實施例1 ίο 於製造前述實施例1之丙烯酸系共聚物時，除了使用甲 基丙烯酸30重量份、甲基丙烯酸異莰酯30重量份、甲基@ 烯酸二環戊酯1〇重量份、笨乙烯30重量份，製造玻璃轉移 溫度為111°C之丙烯酸系共聚物以外，實施與實施例1相同 之方法，以製造有機薄膜電晶體用感光性樹脂組成物。 15 實施例5 於製造前述實施例1之有機薄膜電晶體用感光性樹脂 組成物時，除了使用玻璃轉移溫度或softening溫度(炼融溫 度）為120°C之酚醛清漆系共聚物以外，實施與實施例1相同 之方法，以製造有機薄膜電晶體用感光性樹脂組成物。 20 實施例6 於製造前述實施例1之有機薄膜電晶體用感光性樹脂 組成物時，除了使用玻璃轉移溫度為127°C之聚醯亞胺樹脂 以外，實施與實施例1相同之方法，以製造有機薄膜電晶體 用感光性樹脂組成物。 200908407 比車交ί列1 於製造前述實施例1之有機薄膜電晶體用感光性樹脂 組成物時，除了使用二乙二醇甲基醚作為溶劑以外，實施 與實施例1相同之方法，以製造有機薄膜電晶體用感光性樹 5 脂組成物。 比較例2 於製造前述實施例1之有機薄膜電晶體用感光性樹脂 組成物時，除了使用丙二醇甲基醚丙酸酯作為溶劑以外， 實施與實施例1相同之方法，以製造有機薄膜電晶體用感光 10 性樹脂組成物。 比車交Ϊ歹1J 3 於製造前述實施例1之丙烯酸系共聚物製造時，除了使 用甲基丙烯酸30重量份、甲基丙烯酸環氧丙酯10重量份、 甲基丙烯酸二環戊酯40重量份、苯乙烯20重量份，製造玻 15 璃轉移溫度為152°C之丙烯酸系共聚物以外，實施與實施例 1相同之方法，以製造有機薄膜電晶體用感光性樹脂組成 物。 比幸交命J 4 於製造前述實施例1之有機薄膜電晶體用感光性樹脂 20 組成物時，除了使用玻璃轉移溫度或softening溫度（熔融溫 度）為82°C之酚醛清漆系共聚物以外，實施與實施例1相同 之方法，以製造有機薄膜電晶體用感光性樹脂組成物。 比較例5 於製造前述實施例1之有機薄膜電晶體用感光性樹脂 17 200908407 組成物時，除了使用玻璃轉移溫度為155°C之聚醯亞胺樹脂 以外，實施與實施例1相同之方法，以製造有機薄膜電晶體 用感光性樹脂組成物。 使用旋轉塗布器將前述實施例1至6及比較例1至5 5所製造之有機薄膜電晶體用感光性樹脂組成物塗布於裸矽 晶片（Bare silicon wafer)後，在加熱板上以90。(：預烤2分 鐘，而形成厚度3.6# m之膜。於以此種方法形成之膜上使 用預定的圖案遮罩(pattern mask)，照射於365nm之強度為 lOmW/cm2的紫外線，並以1〇"ml:1CD作為基準曝光量。 10之後，以0.38重量❶之四甲基銨氫氧化物水溶液於23。〇顯 像2分鐘後，以超純水洗滌丨分鐘得到圖案膜後，照射全 面曝光(floodExp〇sure)500mJ/cm2後，以150°C之對流供箱 (Convection oven)進行硬化（Curing)6〇分鐘後得到薄膜。於 評價該薄膜之以下物理特性後，將該結果顯示於以下表i。 15 a)耐化學性：將前述形成於晶片上的薄膜以7(TC浸潰 (dipping)於NMP5分鐘後，以超純水漂洗(rinse)，並藉由 FE-SEM測定截面以測定NMp處理前後的1〇"mCD變化 率。當變化率為0〜20%時係以〇表示，為2〇〜4〇%時以△表 示，大於40%或產生圖案剝離時以χ表示。 20 b)TGA分析：以刀剝出前述形成於晶片上的薄膜後， 得到分別為3Gmg之試料。藉由TGA(熱重量分析裝備）以 220 C 60分鐘之等溫條件下測定所得試料之重量損失 (weight loss%)。此時，當產生之重量損失為〇 5重量％時係 以〇表不，為0.5〜1.5重量％時以△表示，大於15重量％ 18 200908407 時以X表示。 C)厚度變化率：將前述形成於晶片上的薄膜再以15〇 C之對/瓜Μ目進行硬化6〇分鐘後，藉由fe_sem測定截面 以測定厚度變化率。若變化率為0〜3%時係以〇表示，為 5 3〜1〇%時以△表示，為10%以上時以X表示。 [表1] 實知實施實施& I I ,_l I I kK4$^ thfe tKfea propylene glycol monoalkyl bond such as diol ethyl ether, propylene dipropyl ether or propylene glycol butyl ether; It is preferred to use propylene glycol-ethyl lysine, propylene glycol monodecyl ether, n-butyl acetate or the like. In the case where the amount of the solid content (aKb) of the photosensitive resin composition for the entire organic thin film transistor is preferably 4% by weight, it is preferably contained in an amount of 15 to 4% by weight. . When the content of the solid portion of the entire composition is less than 1 Gwt%, there is a problem that the thickness of (4) is thinned and the flatness of coating is lowered sharply; when it is more than 5% by weight, the coating thickness is 12 200908407, and when it is coated, Excessively reluctantly coating equipment. Further, the photosensitive resin composition for an organic thin film transistor of the present invention may be added with a compatibility additive such as a photosensitizer, a surfactant, a thermal polymerization inhibitor or an antifoaming agent, and the content may be 0.001 to 10% by weight, respectively. (5) The photosensitive resin composition for an organic thin film transistor of the present invention comprising the above-mentioned components is preferably filtered with a Millipore filter of 0.1 to 0.2/z m or the like. Moreover, the present invention provides a pattern forming method of an organic thin film transistor using the photosensitive resin composition for an organic thin film transistor, and an organic thin film transistor including a hardened body of a photosensitive resin composition for a 10-film thin film transistor. The pattern forming method of the organic thin film transistor of the present invention is characterized in that the photosensitive resin composition for an organic thin film transistor is used as an organic insulating film or a protective film material to form a pattern for forming a substrate for an organic thin film transistor, and is used. The photosensitive resin composition for the organic thin film transistor. The photosensitive resin composition for an organic thin film transistor of the present invention can be used in a method of generally forming a pattern of a display. As a specific example, the photosensitive resin composition for an organic thin film transistor can be applied onto the surface of an organic film substrate by a spray method, a roll coating method, a spin coating method, or the like, and the solvent can be removed by prebaking to form a coating film. . At this time, it is preferred that the prebaking is carried out at a temperature of 20 to 80 ° C for 1 to 15 minutes. Thereafter, visible light rays, ultraviolet rays, far ultraviolet rays, electron beams, X-rays, and the like are irradiated onto the formed coating film by a pattern prepared in advance, and unnecessary portions are removed by development of the developing liquid, thereby forming a predetermined picture of. At this time, the hardening temperature is preferably 80 to 150 °C. 13 200908407 The above-mentioned developing solution is preferably an aqueous alkali solution, specifically, an inorganic base such as sodium hydroxide, potassium hydroxide or sodium carbonate; a primary amine such as ethylamine or n-propylamine; and diethylamine; a secondary amine such as n-propylamine; a tertiary amine such as trimethylamine, decyldiethylamine, didecylethylamine or triethylamine; 5 dimethylethanolamine, methyldiethanolamine An alcohol amine such as triethanolamine; or an aqueous solution of a quaternary ammonium salt such as tetramethylammonium hydroxide or tetraethylammonium hydroxide. In this case, the developing solution is used by dissolving the basic compound in a concentration of 0.1 to 10% by weight, and a water-soluble organic solvent such as methanol or ethanol or a surfactant may be added in an appropriate amount. 10 Furthermore, after developing with such a developing solution, it is washed with ultrapure water for 30 to 90 seconds to remove unnecessary portions, and dried to form a pattern, which is heated by a heating device such as an oven at a temperature of 80 to 150 ° C. The final pattern can be obtained by processing the aforementioned pattern for 30 to 90 minutes. In the following, the preferred embodiments are disclosed to understand the present invention, but the following examples 15 are merely illustrative of the present invention, and the scope of the present invention is not limited by the following examples. [Examples] Example 1 (manufacturing of acrylic copolymer) 20 Adding 10 parts by weight of 2,2'-azobis(2,4-dioxyl valeronitrile) to a conical flask having a condenser and a stirrer 600 parts by weight of tetrahydroxyfuran, 30 parts by weight of methacrylic acid, 30 parts by weight of glycidyl methacrylate, 20 parts by weight of styrene, and 20 parts by weight of isodecyl methacrylate, after nitrogen substitution, slowly Stir. The reaction solution was heated to 60 ° C, and a 14 200908407 • while maintaining this temperature for 26 hours, a polymer solution containing an acrylic copolymer was produced. In order to remove the unreacted monomer of the polymer solution, 1,000 parts by weight of the aforementioned polymer solution was precipitated in 10,000 parts by weight of n-hexane with respect to a poor solvent (Poor Solvent). After the precipitation, the poor solvent in which the unreacted material was dissolved was removed by a filtering procedure using a mesh. Thereafter, in order to remove the solvent containing the unreacted monomer remaining after the filtration process, it was vacuum-dried at 30 ° C or lower and completely removed to produce a propenic acid-based copolymer. The glass transition 10 of the acrylic copolymer produced as described above was at a temperature of 97 °C. (Production of photosensitive resin composition for organic thin film transistor) 100 parts by weight of the above-prepared acrylic copolymer was mixed with 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1- 20 parts by weight of mercaptoethyl]phenyl]ethylidene]bisphenol 1,2-diazide naphthoquinone-5-sulfonate, and dissolved by propylene glycol monoethyl 15 acetate, The solid content of the mixture was 30% by weight, and it was filtered with a 0.2/m Millipore filter to prepare a photosensitive resin composition for an organic thin film transistor. Example 2 In the production of the acrylic copolymer of the above Example 1, 30 parts by weight of mercaptopropenic acid, 60 parts by weight of isodecyl methacrylate, and 10 parts by weight of dicyclopentanyl methacrylate were used to produce glass. The acrylic copolymer having a transfer temperature of 117 ° C was subjected to the same method as in Example 1 except that propylene glycol monomethyl ether was used as the solvent of the photosensitive resin weight for the crystal crystal to produce photosensitivity for the organic thin film transistor. Resin composition. 15 200908407 Example j· In the production of the acrylic copolymer of the above Example 1, 25 parts by weight of methylenedienoic acid, 25 parts by weight of glycidyl methacrylate, and 15 parts by weight of isodecyl methacrylate were used. 35 parts by weight of mercapto-acrylic acid dicyclopentanate to produce a propylene-glycolic acid copolymer having a glass transition temperature of 13 ° C, except that n-butyl acetate was used as a solvent for a photosensitive resin weight for a crystal, The same method as in Example 1 was carried out to produce a photosensitive resin-based compound for an organic thin film transistor. Example 1 In the production of the acrylic copolymer of the above Example 1, 30 parts by weight of methacrylic acid, 30 parts by weight of isodecyl methacrylate, and 1 part by weight of methyl 2-enoic acid dicyclopentanate were used. A photosensitive resin composition for an organic thin film transistor was produced in the same manner as in Example 1 except that the acrylic copolymer having a glass transition temperature of 111 ° C was produced in an amount of 30 parts by weight of ethylene. [Example 5] When the photosensitive resin composition for an organic thin film transistor of the above-mentioned Example 1 was produced, except that a novolac-based copolymer having a glass transition temperature or a softening temperature (smelting temperature) of 120 ° C was used, The same method as in Example 1 was carried out to produce a photosensitive resin composition for an organic thin film transistor. [Example 6] When the photosensitive resin composition for an organic thin film transistor of the above-mentioned Example 1 was produced, the same method as in Example 1 was carried out except that a polyimide resin having a glass transition temperature of 127 ° C was used. A photosensitive resin composition for producing an organic thin film transistor. When the photosensitive resin composition for an organic thin film transistor of the above-mentioned Example 1 was produced, the same method as that of Example 1 was carried out, except that the photosensitive resin composition for an organic thin film transistor of Example 1 was produced. Photosensitive tree 5 lipid composition for organic thin film transistors. Comparative Example 2 In the production of the photosensitive resin composition for an organic thin film transistor of Example 1, the same method as in Example 1 was carried out except that propylene glycol methyl ether propionate was used as a solvent to produce an organic thin film transistor. A photosensitive 10 resin composition was used. When the acrylic copolymer of the above Example 1 was produced, it was used in addition to 30 parts by weight of methacrylic acid, 10 parts by weight of glycidyl methacrylate, and 40 parts by weight of dicyclopentanyl methacrylate. In the same manner as in Example 1, except that 20 parts by weight of styrene and 20 parts by weight of styrene were used to produce an acrylic copolymer having a glass transition temperature of 152 ° C, a photosensitive resin composition for an organic thin film transistor was produced. When the composition of the photosensitive resin 20 for an organic thin film transistor of the above-mentioned Example 1 is produced, the use of a novolak-based copolymer having a glass transition temperature or a softening temperature (melting temperature) of 82 ° C is used. The same method as in Example 1 was carried out to produce a photosensitive resin composition for an organic thin film transistor. Comparative Example 5 The same procedure as in Example 1 was carried out, except that the composition of the photosensitive resin 17 200908407 for the organic thin film transistor of the above-mentioned Example 1 was used, except that a polyimide resin having a glass transition temperature of 155 ° C was used. A photosensitive resin composition for an organic thin film transistor is produced. The photosensitive resin composition for the organic thin film transistor manufactured in the above Examples 1 to 6 and Comparative Examples 1 to 5 was applied to a bare silicon wafer using a spin coater, and then 90 on a hot plate. (: pre-bake for 2 minutes to form a film having a thickness of 3.6 # m. Using a predetermined pattern mask on the film formed by this method, irradiating ultraviolet rays having a intensity of 10 mW/cm 2 at 365 nm, and 1〇"ml:1CD as the reference exposure amount. After 10, 0.38 weight of tetramethylammonium hydroxide aqueous solution was used for 23 minutes. After 2 minutes of development, the film was washed with ultrapure water for a minute to obtain a pattern film. After irradiating a full exposure (flood Exposure) 500 mJ/cm2, the film was cured by a Convection oven at 150 ° C for 6 minutes to obtain a film. After evaluating the following physical properties of the film, the result was obtained. Shown in the following Table i. 15 a) Chemical resistance: The film formed on the wafer was rinsed with ultrapure water at 7 (TC dipping) on NMP for 5 minutes, and by FE-SEM The cross section was measured to determine the change rate of 1 〇 "mCD before and after NMp treatment. When the rate of change is 0 to 20%, it is represented by 〇, when it is 2 〇 to 4 〇%, it is represented by Δ, when it is greater than 40% or when pattern peeling occurs. 20)) TGA analysis: after peeling off the film formed on the wafer by a knife, The sample is not 3Gmg. The weight loss of the obtained sample was measured by TGA (thermogravimetric analysis equipment) under isothermal conditions of 220 C for 60 minutes. At this time, when the weight loss generated is 〇5% by weight, it is represented by 〇, when it is 0.5 to 1.5% by weight, it is represented by Δ, and when it is more than 15% by weight, 18, 200908407, it is represented by X. C) Thickness change rate: The film formed on the wafer was further cured by a pair of 15 〇 C / melon for 6 minutes, and then the cross section was measured by fe_sem to measure the thickness change rate. When the rate of change is 0 to 3%, it is represented by 〇, when it is 5 3 to 1%, it is represented by Δ, and when it is 10% or more, it is represented by X. [Table 1] Practical implementation implementation & I I , _l I I kK4$^ thfe tKfe
由刖述表1可知，藉由本發明所製造的實施例1至6之使 用丙稀酉夂系共聚物樹脂、齡駿清漆共聚物及聚醯亞胺樹脂 -低/弗點之特疋溶劑所得之有機薄膜電晶體用感光性樹脂 1〇、.且成物’即使於低溫硬化條件下，硬化度亦良好，且於後 製程序時面臨之對熱處理製程及特定溶劑之耐熱性及耐化 學特性優異。特別是，於比較例4中，有祕清漆樹脂之财 熱性下降的贿’於比較例5中，則有於所賦予之硬化條件 下不會產生充分之硬化的問題。 15 依據以上結果，可確認本發明於作為需要低溫程序之 有機溥膜電晶體的層間絕緣膜及使用該有機薄膜電晶體之 可撓式顯示器及OLED用保護膜時，具有優異之性賴性。 【阚式簡單說明】 盈。 20 【主要元件符號說明】 無 19It can be seen from Table 1 that the acetonitrile-based copolymer resin, the aging varnish copolymer, and the polyimine resin-low/Focus special solvent are obtained by using Examples 1 to 6 produced by the present invention. The photosensitive resin for organic thin film transistor is made of a photosensitive resin, and the cured product is excellent in hardening degree even under low-temperature curing conditions, and is resistant to heat treatment and heat resistance and chemical resistance of a specific solvent in a post-process. Excellent. In particular, in Comparative Example 4, the brittleness of the mysterious varnish resin was lowered. In Comparative Example 5, there was a problem that sufficient hardening did not occur under the hardening conditions imparted. According to the above results, it has been confirmed that the present invention has excellent properties when it is used as an interlayer insulating film of an organic germanium film transistor requiring a low temperature process and a flexible display using the organic thin film transistor and a protective film for an OLED. [Simple description] Ying. 20 [Main component symbol description] None 19