201027246 六、發明說明： 【發明所屬^技術々員織】 發明領域 本發明是有關於光阻組成物，更詳而言之，係有關於 如液晶顯示裝置電路或半導體積體電路般欲製造微細電路 圖案時所賴的光阻組成物，該組成物係電路線寬的均句 度、解像度、顯料比、黏練等優異，尤錢光速度、 殘膜率及耐熱性佳者。 發明背景 如液晶顯示裝置電路或半導體積體電路這類微細的電 路圖案’係於形成在基板上的絕_轉·金屬膜，將 光阻組成物塗布、硬化並曝光且㈣，則彡成作為目的之 形狀圖案。將業已形成圖制光阻膜作為光罩來使用而蚀 刻金屬膜或絕_之後，除去殘存的轨膜，即在基板上 形成微細電路。這種液晶顯示裝置電㈣光阻組成物係依 據經曝光之部分的溶解度變化而分類為負型與正型。 在實用性的觀點上，重要的光阻組成物之特性包含 了：所形成的光_之感光速度、耐熱性、顯影對比、解 像度、與基板的黏著力、殘膜率、電路線寬一致性(CD uniformity)及人體安全性等的使用方便性。 所謂感光速度係指光阻的溶解度藉由曝光而改變的速 度’為了藉由多次反覆步驟使多重圖案生成，必須進行數 次的曝光，尤其在如光通過一連串透鏡與濾器之投影曝光 201027246 技法這種使用強度已降低之光的光阻臈上更為重要。 特別是在薄膜電晶體液晶顯示裝置（以下稱tft_LCD) 方面’為了減少屬薄膜電晶體液晶顯示裝置之特徵所在之 基板大面積化所導致在生產線上過長的曝光時間，必須要 求感光速度的提升。又，感光速度與殘膜率係呈反比關係， 感光速度愈快，殘膜率就展現減少的傾向。 顯影對比係意指在藉顯影所露出的部位之薄膜損失 量、與未露出的部位之薄膜損失量的比。由於通常會持續 顯影直到被覆有光阻膜的露出基板其露出部位之被覆物幾 乎完全溶解除去時為止，故顯影對比係可在已露出之被覆 部位被元全除去時，以未露出部位測定薄膜損失量而簡單 決定。 光阻膜解像度係指藉由使光阻膜露出時所使用的光罩 之空間間隔獲致微細的多數電路線，並使該錄電路線重 現以顯現為高度敏銳之像的光阻膜系統的能力。 在各種產業上的用途，尤其是液晶顯示裝置或半導體 電路之製造上，光阻膜必須具備可形成具有非常纖細之線 與空間寬度（Ιμίη以下）的圖案的解像度。 前述解像度與对熱性也有所關聯，必須將在透過#光 與顯影步騎得_圖案形狀作為光罩所崎的步驟中， 因施加的熱所導致的圖案線寬變形降到最小化 所得到的圖案之耐熱性若偏低， 步驟中的、熱而增加，產生線寬變形， 劣。 貝U圖案流動會因追加 ®而誘發解像度的低 201027246 大部分的光阻組成物包含了用以形成光阻膜的高分子 樹脂、感光性化合物及溶媒。在習知技術中，已進行了用 以改善液晶顯示裝置電路用光阻組成物的感光速度、顯影 對比、解像度及人體安全性的多方嘗試。 例如，下述專利文獻丨中，揭示了使用2種類的酚甲醛 鹼性可溶性樹脂混合物與典型性感光性化合物。下述專利 文獻2中，揭示了在酚性樹脂與萘酚醌二疊氮化物 (naphthoquinone diazide ; DNQ)感光劑中添加有機酸環酐以 使感光速度增加之構成。下述專利文獻3中，揭示了為使感 光速度增加並使人體安全性提升，而使用了鹼性可溶性樹 脂、鄰-本酿一疊氮化物感光性化合物、及作為溶媒之丙二· 醇烷醚乙酸酯的光阻組成物構成。 但疋’迄今仍持續尋求一種多樣性光阻組成物，可不 犧牲顯影對比、解像度、高分子樹脂的溶解性、與基板的 黏著力 '及電路線寬一致性等光阻組成物的適當特性之任 一特性，而在感光速度、殘膜率、及耐熱性上仍屬優異之 適用於各種產業步驟之光阻組成物。 【先前技術文獻】 【專利文獻】 【專利文獻1】美國專利第3,666,473號 【專利文獻2】美國專利第4,115,128號 【專利文獻3】美國專利第4,550,069號 【發明内容】 發明概要 201027246 發明欲解決之課題 本發明係考慮到前述習知技術的問題點，目的在於提 供一種新聽狀光阻减物，係含有既叙光阻組成物 之基本物性，並同時在光阻膜的感光速度、殘膜率、耐熱 性方面具有更優異之物性者。 本發明之其他目的係利用前述本發明所獲致之光阻， 而提供具有微細電路圖案之基板的製造方法。 本發明之其他目的係提供一種電子元件，係包含藉由 前述本發明所獲得之具有微細電路圖案之基板者。 用以欲解決課題之手段 為了達成别述目的，本發明提供一種光阻組成物，包 含有：a)鹼性可溶性樹脂；b)感光性化合物；c)膠體狀無機 物；及d)有機溶媒。 發明效果 依據本發明所獲致之光阻組成物，係藉由導入膠體狀 無機物而k供電路線寬一致性(CD uniformity)、解像度、顯 影對比、黏著力、耐化學性優異的組成物’尤其感光速度、 殘膜率及耐熱性優異。減少因降低感光速度而導致生產線 的長曝光時間’可期待以優異的耐熱性防止電路線寬變形 而獲致生產性增加。 【實施方式3 用以實施發明之形態 本發明之光阻組成物，其特徵在於包含：（a)鹼性可溶 性樹脂；（b)感光性化合物；（c)膠體狀無機物；及(d)有機溶 201027246 媒。 用以製造光阻組成物可使用的高分子樹脂在該技術領 域中廣為人知。作為本發明所使用的局分子樹脂，是(a)驗 性可溶性樹脂係酚、間及/或對甲酚等芳香族醇與醛類反應 所合成的高分子共聚物，適當為紛越清漆樹脂。 例如，酚類方面，可將苯酚、鄰-甲酚、間_甲酚、對_ 甲酚、2,3-二苯甲酚、2,5-二苯曱酚、3,4-二苯甲酚、3,5-二苯甲酚、2,3,5-三甲基苯酚-二苯甲酚等單獨使用或混合2 種以上使用。 又’作為與前述酚類縮合的醛類，可舉例如甲搭、三 噚《山、對曱醛、〇：或冷-苯丙醛、鄰或間或對羥苯甲醛等。 酚類與醛類的縮合反應中一般可使用酸性催化劑。 作為該酸性催化劑者可舉例如硕酸、乙酸、硫酸、草 酸、對甲苯磺酸等。 一般而言，常使用水作為鹼性可溶性樹脂的合成反應 /谷媒，不過在反應初期不均相的情況下，亦可使用曱醇、 乙醇、丙醇、丁酵、丙二醇—曱醚等醇類、四氫呋喃、二 噚吡等環狀醚類、曱乙酮、甲基異丁酮、2_庚酮等酮類。 前述反應溶媒係相對於原料1〇〇重量份’而使用2〇至 10,000重量份的量，縮合反應時的反應溫度可依據原料的 反應性調節，一般是以10至200°c為佳。 縮合反應結束後，為了除去殘留的反應原料與酸性催 化劑、反應溶媒等故而升溫到13〇至23〇°c，在減壓下除去 即可獲得鹼性可溶性樹脂。 201027246 為了改善光阻的性能，亦可適當除去前述樹脂中的高 分子、中分子、低分子等，選擇適合於用賴分子量之樹 脂來使用。 前述(b)感紐化合物，適當者可㈣二疊氮系化合 物’例如，可單獨使用或混合使用m苯基喊2重 氮小萘紛各續酸進行醋化反應而製造的23,4三經二苯基 酮-1,2-萘紛酉昆二疊氮化物_5_績酸酿、與四經二笨基銅與2_ 重氮-1-萘酚-5-磺酸進行酯化反應而製造的2,3,4,4四羥二 本基酮-1,2-秦紛酿1 —疊氮化物-5-確酸醋。 前述感光性化合物可使聚羥二笨基酮與12-萘酚醌二 疊氮化物、2-重氮小萘’_績酸等的二疊氮系化合物反應 而製造。 前述(b)感光性化合物的含量，為了維持適當的感光速 度，相對於a)鹼性可溶性樹脂及c)膠體狀無機物之固形分合 计100重量伤’感光性化合物的總含量宜為5至50重量份， 前述感光性化合物的總含量若少於5重量份，雖然感光速度 會變得過度迅速’但會引起殘膜率的嚴重低劣，若超過5〇 重量份，則可能引起感光速度過度延遲的問題。 (c)膠體，狀無機物係於無機物表面，相對於前述無機物 100重量份，一面使約1至120重量份的有機矽烷反應一面除 去水並添加有機溶媒’即可得到業已使反應介質（reacti〇n medium)疏水化的無機溶膠。 在此’無機物可以是選自於二氧化矽、氧化鋁、氧化 鈦、氧化m化錫、氧化辞、可與有财狀應之無機 201027246 物或業經二氧化矽表面改質的無機物中之至少一種。 又，有機矽烷可以Rl〇-3Si(OR2)i-4表示，在此，R1係可 選自於烷基、苯基、氟碳烷基(fluorocarbon alkyl)、丙烯酸 基、甲基丙烯酸基、烯丙基、乙烯基及環氧基之中，R2係 低級烷基，可選自於例如碳原子數1至4的烷基（甲基、乙 基、丙基、異丙基、丁基等）之中，OR2可選自於乙酸、肟 基或烷氧基，烷氧基係可選自於例如碳原子數1至4。 使用於前述反應介質的疏水性化的有機溶媒並不需要 特別限定，可以是選自於本發明的（d)有機溶媒之至少一種。 膠體狀無機物，以球狀而言可具有約1至l〇〇nm的直 徑，或以纖維狀而言可以約1〇〇至1000ηιη的大小來形成。 膠體狀無機物係在鹼性可溶性樹脂與膠體狀無機物固 形分合計的總重量中’宜含有約丨至％重量％。 驗性可溶性樹脂與膠體狀無機物固形分合計的總重量 中，膠體狀無機物若少重量％，則可能出現塗膜的感光 速度、殘膜率、耐熱性降低，若超過50重量％，則可能引 起塗膜的龜裂、平坦性降低等的問題。 如此，藉由以具有反應性基的有機矽烷將膠體狀無機 物的表面崎表面處理，域物的粒子就可以有機溶劑穩 疋化並同時可以保存性優異的分子層次化學性結合。 JC(d)有機溶媒並無特別限定，例如可包含選自於： 氫夫喃 '乙二醇—甲醚、乙二醇一乙醚、乙酸曱 蘇乙酸乙基赛璐蘇、二乙二酵一曱醚、二乙二醇 一乙鱗、— 一醇二曱醚、乙二醇二乙醚 '乙二醇甲乙醚、 201027246 丙二醇一甲醚、丙二醇一乙鱗、丙二醇丙醚、丙二醇丁醚、 乙酸丙二醇甲醚、乙酸丙二醇乙醚、乙酸丙二醇丙謎、乙 酸丙二醇丁鍵、丙酸丙二醇甲乙酯、丙酸丙二醇乙趟、丙 酸丙二醇丙喊、丙酸丙二醇丁謎、曱苯、二甲苯、甲乙酮、 環己酮、4-羥基4-甲基2-戊酮、乙酸甲酯、乙酸乙酯、乙酸 丙酯、乙酸丁酯、2-經基丙酸乙酯、2-羥基2-甲基丙酸曱酯、 2- 羥基2-甲基丙酸乙酯、羥基乙酸甲酯、羥基乙酸乙酯、羥 基乙酸丁酯、乳酸曱酯、乳酸乙酯、乳酸丙酯、乳酸丁酯、 3- 經基丙酸甲酯、3-羥基丙酸乙酯、3-羥基丙酸丙酯、3-經 基丙酸丁酯、2-羥基3-曱基丁酸甲酯、曱氧基乙酸曱酯、曱 氧基乙酸乙酯、曱氧基乙酸丙酯、甲氧基乙酸丁酯、乙氧 基乙酸甲酯、乙氧基乙酸乙酯、乙氧基乙酸丙酯、乙氧基 乙酸丁酯、丙氧基乙酸甲酯、丙氧基乙酸乙酯、丙氧基乙 酸丙酯、丙氧基乙酸丁酯、丁氧基乙酸甲酯、丁氧基乙酸 乙酯、丁氧基乙酸丙酯、丁氧基乙酸丁酯、2-曱氧基丙酸 甲酯、2-曱氧基丙酸乙酯、2-曱氧基丙酸丙酯、2-曱氧基丙 酸丁酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯、2-乙氧基 丙酸丙酯、2-乙氧基丙酸丁酯、2-甲氧基丙酸甲酯、2-丁氧 基丙酸乙酯、2-丁氧基丙酸丙酯、2-丁氧基丙酸丁酯、3-曱氧基丙酸甲S旨、3 -曱氧基丙酸乙S旨、3 -曱氧基丙酸丙醋、 3-甲氧基丙酸丁酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙 酯、3-乙氧基丙酸丙酯、3-乙氧基丙酸丁酯、3-丙氧基丙酸 甲酯、3-丙氧基丙酸乙酯、3-丙氧基丙酸丙酯、3-丙氧基丙 酸丁酯、3-丁氧基丙酸甲酯、3-丁氧基丙酸乙酯、3-丁氧基 201027246 丙酸丙酯及3-丁氧基丙酸丁酯等的醚類之至少一種。 溶媒係以使前述光阻組成物之固形分含量成為約1〇至 50重量％含於其中為佳，其中更以成為約15至4〇重量％為 佳。含量若少於10重量％時，不僅膜的厚度會形成過薄， 且平坦性會降低’而若超過約50重量％時，不僅膜的厚度 會形成過厚，且塗布時會對裝備造成負擔。 具有這種範圍的固形分之成分，宜為以約〇1至1从111的 微孔濾器等過濾之後加以使用者。 本發明的光阻組成物可依據需要，而於前述成分以 外，在0.01至5重量％的範圍内進一步含有可塑劑、黏著促 進劑、速度增進劑、界面活性劑及消泡劑等添加劑。 本發明係提供一種形成有細微電路圖案之基板的製造 方法，該製造方法包含了於基板塗布藉前述本發明所獲致 之光阻之步驟。 光阻組成物可利用包含浸潰、旋轉塗布法、喷射法、 輥塗法等通常的方法塗布於基板。 作為如述基板者，可包含玻璃、石夕、紹、氧化銦錫 (ITO)、氧化銦鋅(IZO)、I目、二氧化石夕、業已摻雜之二氧化 矽、氮化矽、钽、銅、聚矽、陶瓷、鋁/銅混合物或聚合性 樹脂所構成之物。 於基板塗布藉本發明所獲致之光阻之後，可藉由預焙 (prebake)除去溶媒。這時，預焙步驟可在約7〇至丨1(rc完成。 前述熱處理係為了不致使光阻組成物中的固體成分熱 分解而又可使溶媒蒸發而實施。 201027246 一般而言，以通過預焙步驟將溶媒之濃度最少化為佳。 之後，藉由預先準備好的圖案，將可視光線、紫外光 線、遠紫外線、電子束、X射線等照射於前述業已形成的塗 布膜，以顯影液顯影除去不需要的部分，藉此而形成預定 圖案。 前述顯影液以使用鹼性水溶液為佳，具體而言，可使 用.氫氧化納'氫氧化鉀、碳酸納等無機驗類；正丙胺等 的1級胺類；二乙胺、正-丙胺等的2級胺類；三甲胺、曱基 -乙胺、-甲乙胺、三乙胺等的3級胺類；二曱基乙醇胺、 ❹ 曱基二乙醇胺、二乙醇胺等的烷醇胺類；或氫氧化四曱銨、 氫氧化四乙銨等的4級錢鹽的水溶液等。這時，前述顯影液 係將驗性化合物則.1〜1G重量⑽濃度加以溶解來仙，亦 可適當添加如甲醇、乙醇等的水溶性有機溶媒及界面活,)± 劑。 又，藉如岫述之顯影液顯影之後，以超純水洗淨30〜90 秒除去不需要的部分並乾燥而形成圖案之後，再次藉由硬 焙(Hard bake)步驟進行熱處理使光阻膜的黏著性及耐化學 〇 性增進。 這種熱處理係以在光阻膜的軟化點以下之溫度實施為 佳，尤其以在90至14〇°C的溫度實施為佳。 如前所述完成顯影之基板係利用腐蝕溶液或氣體電漿 進行處理而處理已露出的基板部位，這時，基板的未露出 部位係藉由光阻膜所保護。 依此處理基板之後，利用適當的剥除器（stripper)除去 12 201027246 光阻膜，藉此即可於基板上形成微細電路圖案。 依據本發明所獲致之光阻組成物，係電路線寬一致性 (CD uniformity)、解像度、顯影對比、黏著性優異、尤其感 光速度、殘膜率及耐熱性優異者，可使用於製造液晶顯示 裝置或各種半導體元件。201027246 VI. Description of the Invention: [Technical Field of the Invention] Field of the Invention The present invention relates to a photoresist composition, and more particularly, to a fine structure such as a liquid crystal display device circuit or a semiconductor integrated circuit. The photoresist composition depending on the circuit pattern is excellent in uniformity, resolution, material ratio, and adhesion of the circuit line width, and is particularly good in light speed, residual film rate, and heat resistance. BACKGROUND OF THE INVENTION A fine circuit pattern such as a liquid crystal display device circuit or a semiconductor integrated circuit is attached to a metal film formed on a substrate, coated, hardened and exposed to a photoresist composition, and (4) The shape pattern of the purpose. After the patterned photoresist film is formed as a photomask and the metal film is etched or removed, the remaining rail film is removed, that is, a fine circuit is formed on the substrate. The liquid crystal display device of the liquid crystal display device is classified into a negative type and a positive type depending on the solubility change of the exposed portion. From a practical point of view, the characteristics of important photoresist compositions include: the speed of light formed, heat resistance, development contrast, resolution, adhesion to the substrate, residual film rate, and line width uniformity. (CD uniformity) and ease of use of human body safety. The so-called photospeed refers to the speed at which the solubility of the photoresist changes by exposure. In order to generate multiple patterns by multiple repetition steps, several exposures must be performed, especially in the case of a projection of light through a series of lenses and filters. 201027246 The use of this type of light whose intensity has been reduced is more important. In particular, in the case of a thin film transistor liquid crystal display device (hereinafter referred to as tft_LCD), in order to reduce the exposure time of the substrate which is characterized by the large area of the substrate which is a characteristic of the thin film transistor liquid crystal display device, it is necessary to increase the exposure speed. . Further, the photospeed is inversely proportional to the residual film ratio, and the faster the photospeed, the tendency of the residual film ratio to decrease. The development contrast means the ratio of the amount of film loss at the portion exposed by development to the amount of film loss at the portion not exposed. Since the development is usually continued until the exposed substrate coated with the photoresist film is almost completely dissolved and removed, the development contrast can be measured at the unexposed portion when the exposed coated portion is completely removed. The amount of loss is simply determined. The photoresist film resolution refers to a photoresist film system in which a large number of circuit lines are obtained by spatial division of a photomask used when the photoresist film is exposed, and the recording circuit line is reproduced to appear as a highly sharp image. ability. In various industrial applications, particularly in the manufacture of liquid crystal display devices or semiconductor circuits, the photoresist film must have a resolution capable of forming a pattern having a very fine line and a spatial width (below Ιμίη). The above-mentioned resolution is also related to the heat, and it is necessary to minimize the distortion of the line width of the pattern due to the applied heat in the step of riding the #光 and the developing step as the mask. If the heat resistance of the pattern is low, the heat in the step increases, and the line width is deformed and deteriorated. The U-pattern flow will cause a low resolution due to the addition of ®. 201027246 Most of the photoresist composition contains a polymer resin, a photosensitive compound, and a solvent for forming a photoresist film. In the prior art, various attempts have been made to improve the photosensitivity, development contrast, resolution, and human body safety of the photoresist composition for a liquid crystal display device circuit. For example, the following patent documents disclose the use of two types of phenol formaldehyde alkaline soluble resin mixtures and typical photosensitive compounds. Patent Document 2 below discloses a constitution in which an organic acid cyclic anhydride is added to a phenolic resin and a naphthoquinone diazide (DNQ) sensitizer to increase the photospeed. In the following Patent Document 3, it is disclosed that an alkali-soluble resin, an ortho-nitride-nitride photosensitive compound, and a propanediol alkane as a solvent are used in order to increase the speed of light and improve the safety of the human body. The composition of the photoresist composition of the ether acetate. However, 疋' has continued to seek a variety of photoresist compositions, without sacrificing the appropriate characteristics of photoresist compositions such as development contrast, resolution, solubility of polymer resins, adhesion to substrates, and line width uniformity. Any of the characteristics, and is excellent in photosensitivity, residual film rate, and heat resistance, and is suitable for various industrial steps of the photoresist composition. [PRIOR ART DOCUMENT] [Patent Document 1] US Patent No. 3,666, 473 [Patent Document 2] US Patent No. 4,115,128 [Patent Document 3] US Patent No. 4,550,069 [Summary of Invention] Summary of Invention 201027246 SUMMARY OF THE INVENTION The present invention has been made in view of the problems of the prior art described above, and an object of the present invention is to provide a novel hearing-reducing light-reducing material which contains the basic physical properties of the composition of the photoresist, and at the same time, the photosensitive speed of the photoresist film and the residual film. Those who have superior physical properties in terms of rate and heat resistance. Other objects of the present invention are to provide a method of fabricating a substrate having a fine circuit pattern by utilizing the photoresist obtained by the foregoing invention. Another object of the present invention is to provide an electronic component comprising a substrate having a fine circuit pattern obtained by the aforementioned invention. Means for Solving the Problems In order to achieve the object, the present invention provides a photoresist composition comprising: a) an alkali-soluble resin; b) a photosensitive compound; c) a colloidal inorganic substance; and d) an organic solvent. EFFECTS OF THE INVENTION The photoresist composition obtained according to the present invention is a composition excellent in CD uniformity, resolution, development contrast, adhesion, and chemical resistance by introducing a colloidal inorganic substance. Excellent in speed, residual film rate and heat resistance. Reducing the long exposure time of the production line due to the decrease in the photospeed can be expected to increase the productivity of the circuit by preventing the line width deformation of the circuit with excellent heat resistance. [Embodiment 3] The photoresist composition of the present invention is characterized by comprising: (a) an alkali-soluble resin; (b) a photosensitive compound; (c) a colloidal inorganic substance; and (d) an organic Solvent 201027246 media. Polymer resins which can be used to produce photoresist compositions are well known in the art. The local molecular resin used in the present invention is a polymer copolymer synthesized by reacting an aromatic alcohol such as a phenol, an intermediate alcohol, and/or a p-cresol with an aldehyde, and is suitably a varnish resin. . For example, in terms of phenols, phenol, o-cresol, m-cresol, p-cresol, 2,3-diphenyl cresol, 2,5-dibenzoquinone, 3,4-diphenyl can be used. Phenol, 3,5-dibenzocresol, 2,3,5-trimethylphenol-benzophenone may be used singly or in combination of two or more. Further, as the aldehyde to be condensed with the phenol, for example, methicone, triterpene "mountain, p-nonanal, hydrazine: or cold-phenylpropanal, o- or m- or para-hydroxybenzaldehyde" may be mentioned. An acidic catalyst can generally be used in the condensation reaction of phenols with aldehydes. The acidic catalyst may, for example, be citric acid, acetic acid, sulfuric acid, oxalic acid or p-toluenesulfonic acid. In general, water is often used as a synthesis reaction/valve medium for an alkali-soluble resin. However, in the case of a heterogeneous phase at the initial stage of the reaction, an alcohol such as decyl alcohol, ethanol, propanol, butanol or propylene glycol-decyl ether may be used. A ketone such as a cyclic ether such as tetrahydrofuran or dipyridamole, anthraquinone, methyl isobutyl ketone or 2-heptanone. The reaction solvent is used in an amount of from 2 to 10,000 parts by weight based on 1 part by weight of the raw material, and the reaction temperature in the condensation reaction can be adjusted depending on the reactivity of the raw material, and is usually 10 to 200 ° C. After completion of the condensation reaction, in order to remove the residual reaction raw material, the acid catalyst, the reaction solvent, and the like, the temperature is raised to 13 Torr to 23 ° C, and the organic soluble resin is obtained by removing under reduced pressure. 201027246 In order to improve the performance of the photoresist, it is also possible to appropriately remove the high molecular weight, the medium molecule, the low molecular weight, and the like in the above resin, and select a resin suitable for use with a molecular weight. The above (b) sensitizing compound may be, for example, a tetrazide compound (for example, it may be used singly or in combination with mphenyl phenyl 2 diazepine phthalocyanine to carry out vinegarization reaction, 23, 4 Esterification of diphenyl ketone-1,2-naphthalene quinone quinone azide _5_ 酸 酸 , , , , , , , , , , , , , , , , , , , The produced 2,3,4,4 tetrahydroxydi- ketone-1,2-Qinyi 1 - azide-5-acid vinegar. The photosensitive compound can be produced by reacting a polyhydroxydiphenyl ketone with a diazide compound such as 12-naphtholquinone diazide or 2-diazophthalazin. The content of the photosensitive compound (b) is preferably from 5 to 50 in terms of the total amount of the photosensitive compound in relation to a) the alkali-soluble resin and c) the solid content of the colloidal inorganic substance in order to maintain an appropriate photospeed. When the total content of the photosensitive compound is less than 5 parts by weight, the photospeed may become excessively rapid, but the residual film rate may be seriously deteriorated. If it exceeds 5 parts by weight, the photospeed may be excessively delayed. The problem. (c) a colloid-like inorganic substance is obtained on the surface of the inorganic material, and the reaction medium is obtained by reacting about 1 to 120 parts by weight of the organic decane with respect to 100 parts by weight of the inorganic substance, and adding an organic solvent. n medium) Hydrophobized inorganic sol. Here, the 'inorganic substance' may be selected from the group consisting of cerium oxide, aluminum oxide, titanium oxide, oxidized tin, oxidized, inorganic or inorganic substances which may be modified with the surface of cerium oxide. One. Further, the organodecane may be represented by Rl〇-3Si(OR2)i-4, wherein R1 may be selected from an alkyl group, a phenyl group, a fluorocarbon alkyl group, an acryl group, a methacryl group, an alkene group. Among the propyl group, the vinyl group and the epoxy group, R2 is a lower alkyl group, and may be selected, for example, from an alkyl group having 1 to 4 carbon atoms (methyl group, ethyl group, propyl group, isopropyl group, butyl group, etc.). Among them, OR2 may be selected from acetic acid, mercapto or alkoxy, and the alkoxy group may be selected, for example, from 1 to 4 carbon atoms. The hydrophobic organic solvent to be used in the above reaction medium is not particularly limited, and may be at least one selected from the group consisting of (d) an organic solvent of the present invention. The colloidal inorganic substance may have a diameter of about 1 to 10 nm in a spherical shape or a size of about 1 to 1000 nm in terms of a fiber. The colloidal inorganic substance is preferably contained in an amount of from about 丨 to % by weight based on the total weight of the alkali-soluble resin and the colloidal inorganic solid. In the total weight of the total amount of the colloidal inorganic resin and the solid content of the colloidal inorganic substance, if the amount of the colloidal inorganic substance is less than % by weight, the photosensitive speed, residual film rate, and heat resistance of the coating film may be lowered, and if it exceeds 50% by weight, it may cause Problems such as cracking and flatness of the coating film. Thus, by subjecting the surface of the colloidal inorganic substance to surface treatment with an organic decane having a reactive group, the particles of the domain can be stabilized by an organic solvent and simultaneously chemically bonded at a molecular level excellent in preservability. The JC (d) organic solvent is not particularly limited, and may be, for example, selected from the group consisting of: hydrogen furam' ethylene glycol-methyl ether, ethylene glycol monoethyl ether, acesulfame acetate ethyl acesulfame, and diethyl diacetate Ether ether, diethylene glycol monoethyl ketone, monool dioxime ether, ethylene glycol diethyl ether 'ethylene glycol methyl ether, 201027246 propylene glycol monomethyl ether, propylene glycol monoethyl sulphate, propylene glycol propyl ether, propylene glycol butyl ether, acetic acid Propylene glycol methyl ether, propylene glycol ethyl acetate, propylene glycol propylene glycol, propylene glycol butyl bond, propionate propylene glycol methyl ethyl acrylate, propionate propylene glycol propylene glycol propionate propylene glycol propionate, propionate propylene glycol butyl ray, toluene, xylene, methyl ethyl ketone , cyclohexanone, 4-hydroxy 4-methyl 2-pentanone, methyl acetate, ethyl acetate, propyl acetate, butyl acetate, 2-ethyl propyl propionate, 2-hydroxy 2-methyl propyl Hydrate ester, ethyl 2-hydroxy-2-methylpropionate, methyl hydroxyacetate, ethyl hydroxyacetate, butyl glycolate, decyl lactate, ethyl lactate, propyl lactate, butyl lactate, 3-menu Methyl propyl propionate, ethyl 3-hydroxypropionate, propyl 3-hydroxypropionate, butyl 3-propylpropionate, 2-hydroxyl Methyl 3-mercaptobutyrate, decyl methoxyacetate, ethyl decyloxyacetate, propyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethoxyacetic acid Ester, propyl ethoxyacetate, butyl ethoxyacetate, methyl propoxyacetate, ethyl propoxyacetate, propyl propoxyacetate, butyl propoxyacetate, methyl butoxyacetate , ethyl butoxylate, propyl butoxyacetate, butyl butoxyacetate, methyl 2-methoxyoxypropionate, ethyl 2-nonoxypropionate, 2-methoxypropionic acid Ester, butyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate Ester, methyl 2-methoxypropionate, ethyl 2-butoxypropionate, propyl 2-butoxypropionate, butyl 2-butoxypropionate, 3-methoxypropionic acid S, 3 - methoxy propionic acid B, 3 - methoxy propionate propyl vinegar, butyl 3-methoxypropionate, methyl 3-ethoxypropionate, 3-ethoxy propyl Ethyl acetate, propyl 3-ethoxypropionate, butyl 3-ethoxypropionate, methyl 3-propoxypropionate, ethyl 3-propoxypropionate, 3- Propyl propionate, butyl 3-propoxypropionate, methyl 3-butoxypropionate, ethyl 3-butoxypropionate, 3-butoxy 201027246 propyl propionate and 3 At least one of ethers such as butyl butoxypropionate. The solvent is preferably such that the solid content of the photoresist composition is from about 1% to about 50% by weight, more preferably from about 15% to about 4% by weight. When the content is less than 10% by weight, not only the thickness of the film may be too thin, but the flatness may be lowered. When it exceeds about 50% by weight, not only the thickness of the film may be excessively thick, but also the burden on the equipment during coating. . The solid component having such a range is preferably applied to a user after filtering with a micropore filter of about 1-1 to 1 from 111 or the like. The photoresist composition of the present invention may further contain an additive such as a plasticizer, an adhesion promoter, a speed improving agent, a surfactant, and an antifoaming agent in an amount of 0.01 to 5% by weight, based on the above-mentioned components, as needed. SUMMARY OF THE INVENTION The present invention provides a method of fabricating a substrate having a fine circuit pattern, the method comprising the step of coating a substrate with a photoresist obtained by the foregoing invention. The photoresist composition can be applied to the substrate by a usual method including impregnation, spin coating, spray coating, or roll coating. As the substrate as described, it may include glass, shixi, sho, indium tin oxide (ITO), indium zinc oxide (IZO), I mesh, silica dioxide, doped cerium oxide, tantalum nitride, lanthanum. A material composed of copper, polyfluorene, ceramic, aluminum/copper mixture or polymerizable resin. After coating the substrate with the photoresist obtained by the present invention, the solvent can be removed by prebake. At this time, the prebaking step can be carried out at about 7 Torr to 丨1 (rc. The heat treatment is carried out in order to prevent the solid component in the photoresist composition from being thermally decomposed and to evaporate the solvent. 201027246 In general, The baking step minimizes the concentration of the solvent. Thereafter, visible light, ultraviolet light, far ultraviolet light, electron beam, X-ray, or the like is irradiated onto the previously formed coating film by a pre-prepared pattern to develop the developing solution. The unnecessary portion is removed, whereby a predetermined pattern is formed. The developer is preferably an aqueous alkaline solution, and specifically, an inorganic test such as sodium hydroxide, potassium hydroxide or sodium carbonate; n-propylamine or the like can be used. Grade 1 amines; grade 2 amines such as diethylamine and n-propylamine; tertiary amines such as trimethylamine, mercapto-ethylamine, methylethylamine, triethylamine; dimercaptoethanolamine, anthracene An alkanolamine such as diethanolamine or diethanolamine; or an aqueous solution of a tetrabasic salt such as tetraammonium hydroxide or tetraethylammonium hydroxide; etc. In this case, the developer is an organic compound having a weight of .1 to 1 G. (10) The concentration is dissolved to the fairy Also may be suitably added as water-soluble organic solvent and living interface as methanol, ethanol, etc.,) ± agent. Further, after development by a developing solution as described above, after washing with ultrapure water for 30 to 90 seconds to remove unnecessary portions and drying to form a pattern, heat treatment is again performed by a hard bake step to form a photoresist film. Adhesion and chemical resistance increase. This heat treatment is preferably carried out at a temperature below the softening point of the photoresist film, particularly preferably at a temperature of from 90 to 14 °C. The substrate which has been developed as described above is treated with an etching solution or a gas plasma to treat the exposed substrate portion. At this time, the unexposed portion of the substrate is protected by the photoresist film. After the substrate is processed accordingly, the 12 201027246 photoresist film is removed by a suitable stripper, whereby a fine circuit pattern can be formed on the substrate. The photoresist composition obtained according to the present invention can be used for manufacturing a liquid crystal display by having a circuit uniformity (CD uniformity), a resolution, a development contrast, an excellent adhesion, particularly a photospeed, a residual film ratio, and heat resistance. Device or various semiconductor components.
以下，提示實施例及比較例以理解本發明。但是，下 述實施例僅用以例示本發明，本發明之範圍並不限定於下 述實施例。 實施例1 (1-1)鹼性可溶性樹脂之製造 將間-甲酌"65g、對-甲盼43g、37%曱醒·水溶液120g、草 酸2g、乙酸丙二醇曱醚(PGMEA)25g置入可回流冷卻之四口 燒瓶中，在氮環境氣體下一面攪拌一面使溫度上升至 100°C，使之縮合4小時。 反應後，將溫度提升至180°C，減壓除去殘存的反應原 料及反應溶媒後，以常溫自然冷卻而獲得鹼性可溶性樹脂。 所獲得的樹脂之分子量係重量平均分子量為2,000，該 重量平均分子量係使用凝膠層析儀(GPC)所測定之聚笨乙 烯換算平均分子量。 (1-2a)感光性化合物之製造 於燒瓶中投入2,3,4,4-四羥二苯基酮20g、1,2-萘酚_二 疊氮化物5-續酸氣化物32g、二嘮山210g ’於常溫下授拌溶 解。 充分攪拌溶解後，將三乙醇胺20%的二噚》山溶液7〇g緩 13 201027246 慢滴下30分鐘後，使之反應3小時。 之後，將業已析出的三乙胺鹽酸鹽過濾除去，並將過 濾液缓慢滴落於弱酸水溶液以使反應生成物析出。 以超純水充分洗淨業已析出之反應生成物之後，進行 過濾並以40°C烘箱乾燥而獲得感光性化合物。 此時所獲得的感光性化合物稱為B1。 (l-2b)感光性化合物之製造 於前述感光性化合物製造步驟（l-2a)中，於燒瓶中投入 2,3,4-三羥二苯基酮20g以取代2,3,4,4，-四羥二苯基酮20g。 投入之後，進行與前述感光性化合物製造步驟（l_2a) 相同的步驟而獲得感光性化合物。 此時所獲得的感光性化合物稱為B2。 (1-3)無機物溶膠之製造 於業已水分散之膠體狀無機物Ludox HAS(商品名：古 雷斯公司（〆k —只社)）中一點點逐步添加鹽酸以調整p H成 為5，再添加業已稀釋於乙二醇之屬有機矽烷之甲基三曱氧 基矽烷100重量份，一面使有機矽烷於奈米粒子無機物表面 反應一面除去水，並添加乙酸丙二醇甲喊(PGMea)作為有 機溶媒以將反應介質疏水性化。此時，通過粒度分析器測 定平均粒子大小的結果，粒子為3〇nm，而獲得固形分為3〇 重量％的無機物溶膠。 (2)光阻組成物之製造 以使（1-1)所得到的鹼性可溶性樹脂與（13)所得到的膠 體狀無機物的固形分比率成為90 : 1〇進行製造。 14 201027246 相對於前述混合物的固形分100重量份，分別投入作為 感光性化合物之以（l-2a)所得到的B1計1〇重量份、以（i_2b) 所得到的B2計10重量份、及作為二氧化;ε夕界面活性劑之 F171(大日本油墨社)計2重量份之後，添加作為溶媒之乙酸 丙二醇甲醚(PGMEA)以使總固形分含量成為3〇重量％，之 後均勻混合而製造光阻組成物。 以0·45μιη的微孔濾器過濾該依此所製造之光阻組成物 以除去不純物，此時，光阻組成物係展現約15CpS的黏度， 而在形成膜之際，依據塗布速度可得到約〇5至5〇|[1111的厚 度。 實施例2 除了以使（1-1)所得到的驗性可溶性樹脂與（i_3)所得到 的膠體狀無機物的固形分比率成為75 : 25進行製造之外， 其餘與實施例1之(2)同樣地製造光阻組成物。 以0·45μπι的微孔濾器過濾該依此所製造之光阻組成物 以除去不純物，此時，光阻組成物係展現約15卬8的黏度， 而在形成膜之際’依據塗布速度可得到約0.5至5.0μιη的厚 度。 實施例3 除了以使（1-1)所得到的驗性可溶性樹脂與（丨_3)所得到 的膠體狀無機物的固形分比率成為60 : 4〇進行製造之外， 其餘與實施例1之(2)同樣地製造光阻組成物。 以0.45μιη的微孔濾器過濾該依此所製造之光阻組成物 以除去不純物，此時，光阻組成物係展現約15卬8的黏度， 15 201027246 而在形成膜之際，依據塗布速度可得到約0.5至5·〇μιη的厚 度。 實施例4 以使（1-1)所得到的鹼性可溶性樹脂與（1-3)所得到的膠 體狀無機物的固形分比率成為90: 10進行製造。 相對於前述混合物的固形分含量’投入作為感光性化 合物之以（l-2a)所得到的Β1計20重量份、及作為二氧化石夕界 面活性劑之F171(大日本油墨社)計2重量份之後，添加作為 溶媒之乙酸丙二醇甲醚(PGME A)以使總固形分含量成為30 重量％，之後均勻混合而製造光阻組成物。 以0·45μηι的微孔濾器過濾該依此所製造之光阻組成物 以除去不純物，此時，光阻組成物係展現約15cps的黏度， 而在形成膜之際’依據塗布速度可得到約0.5至5.Ομιη的厚 度。 實施例5 除了以使（1-1)所得到的鹼性可溶性樹脂與（1_3)所得到 的膠體狀無機物的固形分比率成為75 : 25進行製造之外， 其餘與實施例4同樣地製造光阻組成物。 以0.45μηι的微孔濾器過濾該依此所製造之光阻組成物 以除去不純物，此時，光阻組成物係展現約15卬8的黏度， 而在形成膜之際’依據塗布速度可得到約至5.〇pm的厚 度。 實施例6 除了以使（1-1)所得到的鹼性可溶性樹脂與（1_3)所得到 16 201027246 的膠體狀無機物的固形分比率成為60 : 40進行製造之外， ，其餘與實施例4同樣地製造光阻組成物。 以0.45μηι的微孔濾器過濾該依此所製造之光陴組成物 以除去不純物，此時，光阻組成物係展現約15cps的黏度， 而在形成膜之際，依據塗布速度可得到約〇5至5〇(1111的厚 度。 實施例7 • 以使（1-1)所得到的鹼性可溶性樹脂與（1_3)所得到的膠 、 體狀無機物的固形分比率成為90 : 10進行製造。 相對於前述混合物的固形分含量，投入作為感光性化 合物之以（l-2b)所得到的B2計20重量份、及作為二氧化矽界 . 面活性劑之F171(大日本油墨社)計2重量份之後，添加作為 . 溶媒之乙酸丙二酵甲醚(PGMEA)以使總固形分含量成為3〇 重量％ ’之後均勻混合而製造光阻組成物。 以0·45μιη的微孔濾器過濾該依此所製造之光阻組成物 Φ 以除去不純物，此時，光阻組成物係展現約15卬8的黏度， 而在形成膜之際，依據塗布速度可得到約〇5至5〇从111的厚 度。 實施例8 除了以使（1-1)所得到的驗性可溶性樹脂與（丨_3)所得到 的膠體狀無機物的固形分比率成為75 : 25進行製造之外， 其餘與實施例7同樣地製造光阻組成物。 以0.45μπι的微孔濾器過濾該依此所製造之光阻組成物 以除去不純物，此時，光阻組成物係展現約15叩8的黏度， 17 201027246 而在形成狀際，依據塗布較可_削5至5恤的厚 度。 實施例9 ' 除了以使(1-1)所得到的驗性可溶性樹脂與㈣所得到 的膠體狀無機物的m形分比率絲6G: 4叫行製造之外， 其餘與實施例7同樣地製造光阻組成物。 比較例1 分別投入（1 -1)所得到的鹼性可溶性樹脂固形分i 〇 〇重 量份、作為感光性化合物之以（l-2a)所得到的耵計1〇重量 · 份、以（l-2b)所得到的B2計10重量份、及作為二氧化矽界面 活性劑之F171(大日本油墨社)計2重量份，並添加作為溶媒 之乙酸丙二醇曱醚(PGMEA)以使總固形分含量成為3〇重量 % ’之後均勻混合而製造光阻組成物。 以0·45μπι的微孔慮器過慮該依此所製造之光阻組成物 以除去不純物，此時，光阻組成物係展現約15cps的黏度， 而在形成膜之際，依據塗布速度可得到約0.5至5·〇μιη的厚 度。 ❹ 比較例2 投入（1-1)所得到的鹼性可溶性樹脂固形分1〇〇重量 份、作為感光性化合物之以（l-2a)所得到的Β1計20重量份、 及作為二氧化矽界面活性劑之F171(大日本油墨社)計2重量 份’並添加作為溶媒之乙酸丙二酵甲醚(PGMEA)以使總固 形分含量成為30重量％，之後均勻混合而製造光阻組成物。 以0.45μπι的微孔濾器過濾該依此所製造之光阻組成物 18 201027246 以除去不純物，此時，光阻組成物係展現約15卬&的黏度， 而在形成膜之際’依據塗布速度可得到約〇5至5(^111的厚 度。 比較例3 投入（1-1)所得到的鹼性可溶性樹脂固形分1〇〇重量 伤作為感光性化合物之以（l-2b)所得到的B2計20重量份、 及作為二氧化矽界面活性劑之汧71(大曰本油墨社)計2重量 伤，並添加作為溶媒之乙酸丙二醇曱醚(pGMEA)以使總固 形分含量成為3 0重量％，之後均勻混合而製造光阻組成物。 以〇.45μιη的微孔濾器過濾該依此所製造之光阻組成物 以除去不純物，此時，光阻組成物係展現約15cps的黏度， 而在形成膜之際，依據塗布速度可得到約〇5至5〇从瓜的厚 度。 以下述方法坪估前述實施例丨至實施例9以及比較例丄 至比較例3所製造的光阻組成物之物性後，其結果顯示於下 述表1。 1)感光速度與殘膜率 初始膜厚=損失厚度+殘膜的厚度 殘膜率(％)=(殘膜的厚度/初始膜厚） 感光速度係測定藉由曝光能源於固定顯影條件下膜完 全溶解之能源而求得，於11{rc進行預賠，在曝光及顯影 後，測定殘膜率，而測定可展現其結果之顯影前後的厚度 差。 2)耐熱性 19 201027246 使用旋轉塗布機於玻璃基板上塗布前述實施例1至9以 、 及比較例1至3所製造的光阻組成物之後，以約110°C於熱板 筹 上預焙90秒鐘而形成膜，將該膜以微差掃描熱量測定儀測 定玻璃轉移溫度。 3) 解像度 使用旋轉塗布機於玻璃基板上塗布前述實施例1至9以 及比較例1至3所製造的光阻組成物之後，以約ll(TC於熱板 上預焙90秒鐘而形成膜’將該膜透過紫外線曝光及顯影步 驟得到固定圖案之後，透過掃描電子顯微鏡測定圖案的解 參 像度。 4) 黏著力 於業已塗布ITO的玻璃基板上，藉由前述實施例 及比較例1至3所製造的光阻組成物所製造的光阻膜係以預 焙及顯影步驟獲得所希望的圖案（微細線寬)後，以約13〇 °C於熱板上熱處理約90秒鐘之後，利用腐蝕溶液進行處理 以除去露出部位的ITO ’並測定腐餘溶液腐钱未露出之IT〇 參 的長度以試驗黏著性。 20 201027246 【表1】 感光速f (mJ/cm2) 殘膜率 (%) 耐熱性 ΓΟ 解像度 (μπι) 黏著力 (μπι) 實施例1 19.5 95 111 2.5 0.98 實施例2 15.9 95 120 2.5 1.09 實施例3 11.8 97 124 2.5 1.00 實施例4 24.8 95 112 2.3 1.10 實施例5 22.4 96 119 2.4 1.12 實施例6 17.0 98 126 2.4 1.16 實施例7 12.7 93 110 3.0 1.12 實施例8 11.5 95 114 2.9 1.11 實施例9 10.1 95 122 3.0 1.15 比較例1 22.3 91 106 2.5 1.08 比較例2 29.0 93 107 2.4 1.12 比較例3 14.5 89 104 3.0 1.14 透過上述表1可確認，藉由本發明之實施例所製造的光 阻組成物即實施例1至實施例9，與比較例1至3相較，係感 光速度、殘膜率、耐熱性優異，展現出解像度及黏著力良 • 好的特性。 【圖式簡單說明】 (無） 【主要元件符號說明】 (無） 21Hereinafter, the examples and comparative examples are presented to understand the present invention. However, the following examples are merely illustrative of the invention, and the scope of the invention is not limited to the examples described below. Example 1 (1-1) Preparation of Alkaline Soluble Resin A mixture of m-zine <65 g, p-cono 43 g, 37% awakening aqueous solution 120 g, oxalic acid 2 g, and propylene glycol oxime ether (PGMEA) 25 g was placed. The mixture was reflux-cooled in a four-necked flask, and the temperature was raised to 100 ° C while stirring under a nitrogen atmosphere, and the mixture was condensed for 4 hours. After the reaction, the temperature was raised to 180 ° C, and the remaining reaction raw materials and the reaction solvent were removed under reduced pressure, and then naturally cooled at room temperature to obtain an alkali-soluble resin. The molecular weight of the obtained resin was 2,000, and the weight average molecular weight was a polystyrene-converted average molecular weight measured by a gel chromatography instrument (GPC). (1-2a) Production of photosensitive compound Into a flask, 20 g of 2,3,4,4-tetrahydroxydiphenyl ketone, 1,2-naphthol-diazide 5-supply acid vapor 32 g, Lushan 210g 'mixed and dissolved at room temperature. After thoroughly stirring and dissolving, the triethanolamine 20% diterpene solution was slowly dropped for 13 minutes, and then allowed to react for 3 hours. Thereafter, the precipitated triethylamine hydrochloride was removed by filtration, and the filtrate was slowly dropped into a weak acid aqueous solution to precipitate a reaction product. After the reaction product which had been precipitated was sufficiently washed with ultrapure water, it was filtered and dried in an oven at 40 ° C to obtain a photosensitive compound. The photosensitive compound obtained at this time is referred to as B1. (l-2b) The photosensitive compound is produced in the above-mentioned photosensitive compound production step (1-2), and 20 g of 2,3,4-trihydroxydiphenyl ketone is placed in the flask to replace 2, 3, 4, 4 ,-tetrahydroxydiphenyl ketone 20g. After the introduction, the same procedure as in the above-mentioned photosensitive compound production step (l_2a) is carried out to obtain a photosensitive compound. The photosensitive compound obtained at this time is referred to as B2. (1-3) Manufacture of inorganic sols In a water-dispersed colloidal inorganic substance Ludox HAS (trade name: Gules (〆k - only)), hydrochloric acid is gradually added a little bit to adjust p H to 5, and then added 100 parts by weight of methyltrimethoxy decane which is diluted with ethylene glycol as an organic decane, and removes water while reacting organic decane on the surface of the inorganic particles of the nanoparticle, and adds propylene glycol propylene (PGMea) as an organic solvent. The reaction medium is made hydrophobic. At this time, as a result of measuring the average particle size by the particle size analyzer, the particles were 3 〇 nm, and an inorganic sol having a solid content of 3 重量% by weight was obtained. (2) Production of Photoresist Composition The solid content ratio of the alkali-soluble resin obtained in (1-1) and the colloidal inorganic material obtained in (13) was 90:1. 14 201027246, 100 parts by weight of the solid content of the mixture, and 1 part by weight of B1 obtained as (1-2a) as a photosensitive compound, 10 parts by weight of B2 obtained by (i_2b), and After 2 parts by weight of F171 (Dainippon Ink Co., Ltd.) of the oxidation and the epsilon surfactant, a propylene glycol methyl ether (PGMEA) as a solvent was added to make the total solid content 3 重量%, and then uniformly mixed. A photoresist composition is produced. The photoresist composition thus prepared was filtered by a microporous filter of 0·45 μm to remove impurities, and at this time, the photoresist composition exhibited a viscosity of about 15 CpS, and at the time of film formation, it was obtained according to the coating speed. 〇5 to 5〇|[1111 thickness. Example 2 (2) except that the solid content ratio of the colloidal soluble resin obtained in (1-1) and the colloidal inorganic substance obtained in (i_3) was 75:25. The photoresist composition was also produced in the same manner. The photoresist composition thus prepared is filtered by a microporous filter of 0·45 μm to remove impurities, and at this time, the photoresist composition exhibits a viscosity of about 15卬8, and at the time of film formation, “according to the coating speed. A thickness of about 0.5 to 5.0 μm is obtained. Example 3 Except that the solid content ratio of the colloidal inorganic resin obtained in (1-1) and the colloidal inorganic substance obtained by (丨_3) was 60:4, the remainder and Example 1 were used. (2) A photoresist composition was produced in the same manner. The photoresist composition thus prepared was filtered with a 0.45 μm micropore filter to remove impurities. At this time, the photoresist composition exhibited a viscosity of about 15 卬 8 , 15 201027246 and at the time of film formation, depending on the coating speed. A thickness of about 0.5 to 5 · 〇 μηη can be obtained. Example 4 The solid content ratio of the alkali-soluble resin obtained in (1-1) and the colloidal inorganic material obtained in (1-3) was 90:10. 20 parts by weight of Β1 obtained as (1-2a) as a photosensitive compound, and F171 (large Japanese ink company) as a dioxide dioxide surfactant, 2 parts by weight with respect to the solid content of the mixture After the portion, propylene glycol methyl ether acetate (PGME A) as a solvent was added so that the total solid content was 30% by weight, and then uniformly mixed to prepare a photoresist composition. The photoresist composition thus prepared was filtered by a microporous filter of 0·45 μηι to remove impurities, and at this time, the photoresist composition exhibited a viscosity of about 15 cps, and at the time of film formation, it was obtained according to the coating speed. The thickness of 0.5 to 5. Ομιη. Example 5 A light was produced in the same manner as in Example 4 except that the solid content ratio of the alkali-soluble resin obtained in (1-1) and the colloidal inorganic substance obtained in (1 to 3) was 75:25. Blocking composition. The photoresist composition thus prepared is filtered by a microporous filter of 0.45 μm to remove impurities. At this time, the photoresist composition exhibits a viscosity of about 15 卬 8 , and at the time of film formation, it is obtained according to the coating speed. A thickness of about 5. 〇pm. Example 6 The same procedure as in Example 4 except that the solid-soluble resin obtained in (1-1) and the solid content ratio of the colloidal inorganic material obtained in (1_3) of 16 201027246 were 60:40. A photoresist composition is produced. The thus-prepared iridium composition was filtered with a 0.45 μηι microporous filter to remove impurities. At this time, the photoresist composition exhibited a viscosity of about 15 cps, and at the time of film formation, depending on the coating speed, about 〇 was obtained. 5 to 5 〇 (thickness of 1111.) Example 7: The solid-soluble resin obtained in (1-1) and the solid content ratio of the obtained gum and the bulk inorganic substance were 90:10. With respect to the solid content of the above-mentioned mixture, 20 parts by weight of B2 obtained as (1-2b) as a photosensitive compound, and F171 (large Japanese ink company) as a cerium dioxide boundary After the parts by weight, a propylene glycolate (PGMEA) was added as a solvent to make the total solid content 3% by weight ', and then uniformly mixed to prepare a photoresist composition. The filter was filtered at a microfilter of 0·45 μm. The photoresist composition Φ thus produced is used to remove impurities, and at this time, the photoresist composition exhibits a viscosity of about 15 卬 8 , and at the time of film formation, about 至 5 to 5 依据 from 111 depending on the coating speed. The thickness of Example 8 1-1) A photoresist composition was produced in the same manner as in Example 7 except that the solid content ratio of the obtained colloidal soluble resin obtained by (?3) was 75:25. The 0.45 μm microporous filter filters the photoresist composition thus prepared to remove impurities. At this time, the photoresist composition exhibits a viscosity of about 15 叩 8 , 17 201027246 and in the form of formation, according to coating _ The thickness of the 5 to 5 shirt was cut. Example 9' except that the m-part ratio 6C of the colloidal soluble resin obtained in (1-1) and the colloidal inorganic substance obtained in (4) were produced, The photoresist composition was produced in the same manner as in Example 7. Comparative Example 1 The weight fraction of the alkali-soluble resin obtained in (1 -1) was added, and (1 - 2a) was used as the photosensitive compound. 1 part by weight of the obtained oxime, 10 parts by weight of B2 obtained by (l-2b), and 2 parts by weight of F171 (Japan Pharmaceutical Co., Ltd.) as a cerium oxide surfactant, and added as a solvent Propylene glycol oxime ether (PGMEA) so that the total solid content is 3% by weight Then, the photoresist composition was uniformly mixed to produce a photoresist composition which was subjected to the above-mentioned photoresist composition to remove impurities. At this time, the photoresist composition exhibited a viscosity of about 15 cps, and When the film is formed, a thickness of about 0.5 to 5 μm is obtained depending on the coating speed. ❹ Comparative Example 2 The alkali-soluble resin obtained by (1-1) is added in an amount of 1 part by weight as a photosensitive compound. 20 parts by weight of Β1 obtained in (l-2a), and 2 parts by weight of F171 (Japan Pharmaceutical Co., Ltd.) as a cerium oxide surfactant, and adding propylene glycol acetate (PGMEA) as a solvent The photoresist composition was made to have a total solid content of 30% by weight, and then uniformly mixed to produce a photoresist composition. The photoresist composition 18 201027246 thus produced was filtered with a 0.45 μm microporous filter to remove impurities, at which time the photoresist composition exhibited a viscosity of about 15 Å & The speed can be about 5 to 5 (the thickness of ^111. Comparative Example 3 The alkali-soluble resin obtained by the input (1-1) has a solid content of 1 〇〇, and the weight of the photosensitive compound is obtained as (1-2b). 20 parts by weight of B2 and 2 weights of 汧71 (Otsuka Ink Co., Ltd.) as a cerium oxide surfactant, and propylene glycol oxime ether (pGMEA) as a solvent was added to make the total solid content 3 0% by weight, and then uniformly mixed to produce a photoresist composition. The photoresist composition thus prepared was filtered by a microporous filter of 〇.45 μm to remove impurities, and at this time, the photoresist composition exhibited a viscosity of about 15 cps. At the time of film formation, a thickness of about 5 to 5 Å from the melon can be obtained depending on the coating speed. The photoresists produced in the foregoing Examples 实施 to 9 and Comparative Examples 比较 to 3 were evaluated by the following methods. After the physical properties of the composition, the results are shown in Table 1 below: 1) Photospeed and residual film ratio Initial film thickness = Loss thickness + residual film thickness Residual film rate (%) = (thickness of residual film / initial film thickness) Photospeed is measured by exposure energy The energy obtained by completely dissolving the film under the conditions of development was determined, and the pre-compensation was carried out at 11 {rc. After exposure and development, the residual film ratio was measured, and the difference in thickness before and after development which showed the result was measured. 2) Heat resistance 19 201027246 After coating the photoresist compositions prepared in the above Examples 1 to 9 and Comparative Examples 1 to 3 on a glass substrate using a spin coater, pre-baked on a hot plate at about 110 ° C A film was formed for 90 seconds, and the film was measured for the glass transition temperature by a differential scanning calorimeter. 3) Resolution After coating the photoresist compositions manufactured in the above Examples 1 to 9 and Comparative Examples 1 to 3 on a glass substrate using a spin coater, a film was formed by pre-baking for 90 seconds on a hot plate at about ll (TC). After the film was passed through an ultraviolet exposure and development step to obtain a fixed pattern, the resolution of the pattern was measured by a scanning electron microscope. 4) Adhesion was applied to the ITO-coated glass substrate by the foregoing Examples and Comparative Example 1 The photoresist film produced by the photoresist composition produced by the method of obtaining a desired pattern (fine line width) in a prebaking and developing step, and then heat-treating on a hot plate at about 13 ° C for about 90 seconds. The adhesion was measured by treating with an etching solution to remove the exposed portion of ITO' and measuring the length of the IT ginseng which was not exposed to the rotted solution. 20 201027246 [Table 1] Photospeed f (mJ/cm2) Residual film rate (%) Heat resistance ΓΟ Resolution (μπι) Adhesion (μπι) Example 1 19.5 95 111 2.5 0.98 Example 2 15.9 95 120 2.5 1.09 Example 3 11.8 97 124 2.5 1.00 Example 4 24.8 95 112 2.3 1.10 Example 5 22.4 96 119 2.4 1.12 Example 6 17.0 98 126 2.4 1.16 Example 7 12.7 93 110 3.0 1.12 Example 8 11.5 95 114 2.9 1.11 Example 9 10.1 95 122 3.0 1.15 Comparative Example 1 22.3 91 106 2.5 1.08 Comparative Example 2 29.0 93 107 2.4 1.12 Comparative Example 3 14.5 89 104 3.0 1.14 It can be confirmed from the above Table 1 that the photoresist composition produced by the embodiment of the present invention is implemented. In Examples 1 to 9, compared with Comparative Examples 1 to 3, the photosensitivity, residual film rate, and heat resistance were excellent, and the characteristics of good resolution and adhesion were exhibited. [Simple description of the diagram] (None) [Explanation of main component symbols] (None) 21