TW200810106A - An integrated shadow mask and method of fabrication thereof - Google Patents

Abstract

An integrated shadow mask and method of fabrication thereof. The shadow mask comprises a substrate; at least one pillar structure having base portion and an overhang portion supported by the base portion; wherein the base portion and the overhang portion are formed integrally and the overhang portion includes an under cut surface portion extending from an edge of the overhang portion towards the base portion substantially parallel to or diverging away from a surface of the substrate.

Description

200810106 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates generally to an integrated mouth-opening mask and a method of manufacturing the same, and a method of fabricating an organic light-emitting device. [Prior Art] An 0LED-based electroluminescence (EL) device that emits light generated by radiating and recombining one or more electrons and electrons injected in a sister layer. As the leading next generation tablet shows crying. . OLEDs offer some unique display solutions such as low power consumption, wide viewing angle, good contrast ratio, video speed operation, low voltage operation and light weight. The coffee maker shows that the writing device also has thermal stability. [Some materials have sufficient operating life. 0 A typical OLED group is separated from the right by & Interposed (including at least one photo organic layer). The electrode (anode) is injected with a sub-portion and the other electrode (negative electrode) is injected with a negative charge carrier. f In a typical OLED device, the luminescent material may be a polymer or a + μ ^ anode layer is made of a transparent conductive material such as indium tin oxide (yttrium oxide), and the cathode layer is usually made of a low work function such as c_Mg. Material composition. Flat panel displays typically include an array of imaged or patterned images or pixels on a substrate. This pixel array is usually composed of columns and rows in a passive matrix type 〇LED display, by means of (ano), to the genus? The overlap of (cathodes) defines each pixel. In order to make a specific pixel and then the line of the specific pixel (positive polarization) line and column (negative) line 121629.doc 200810106 ^ sufficient voltage. The anode strip can be easily formed by using a feather, privacy, and table etching process prior to depositing the organic layer. However, 'the cathode cannot be patterned in the same way, because it is greedy

=!! The solution will cause damage to the underlying organic compounds. The simple method of forming the cathode i ^ is through a separate "mask vacuum evaporation cathode gold. However, for this method, due to the manufacturing precision and strong production of the mask material, it is difficult to achieve a finely defined pattern, that is, the line pitch is 1 dereliction of duty or: less pattern. In the manufacturing process of using this light material, the alignment in the real system is also „, and the distance between the mask and the substrate will be guided: the edge of the blur. The human race can be used to protect the fragile of an OLED. The technique of the organic layer is an integrated mask through which the organic layer and the electrode layer are automatically patterned. U.S. Patent Application No. 5,294,87, issued to Tang, issued on (Organic electroluminescent multi-color image display shows a series of parallel walls formed by lithography etching before the deposition-organic EL layer, so that after deposition of the organic EL medium, no lithography (four) (four) steps or wet chemical methods are required In order to obtain a deposition map t of the cathode in the laterally spaced row, the deposition f-plane is positioned relative to the metal source to be deposited such that each wall is interposed between the source and the 1-turn portion of the surface of the organic EL medium. In this direction, when the deposition is carried out, the insertion portion of the material wall intercepts the atom that travels from the source, thereby preventing the metal from depositing on the organic media on the side of each wall. The spacing between the cathode columns. However, the integrated mask is required to be extremely off-axis or large-angle deposition, which is not feasible for large-scale generation in the case of moving a conveyor belt or a rotating body. 121629.doc 200810106 To solve this problem 'integrated mask The parallel wall in the series can be a series of columns with a retrograde profile (a trapezoidal cross section), using a multilayer photoresist system to form a photoresist column with a beveled edge. The retrograde angle of the column must be sufficient to ensure that the cathode metal is not coated. The side wall and the electric short circuit are adjacent to each other. The required column wheel gallery mainly depends on the relative direction of the cathode source relative to the substrate. Therefore, the contour of the retrograde column still maintains the restriction on the deposition angle. M07, Yang (published on June 18, 2nd, 2nd) and 6,596,443 (published on July 22nd) reveal a single-layer integrated mask, which is used by a different photoresist system. (for example, NR7-sub 0-ΡΥ) has a clear feature of the curved contour of the side wall and the overhanging portion. The mask has a large aspect ratio of less than 1,5, and defines the aspect ratio as the degree and degree of the overcut portion. Ratio 'If needed—a well-defined mask, the large aspect ratio makes the column extremely fragile. Moreover, even if the available deposition angle has been amplified, there is still a limit on the deposition angle in the integrated mask: In the type of mask, the base-overcutting part-counternal part structure is widely used to avoid shorting across the mask, but the process for depositing the electrode is to avoid short-circuit problems. Parallel electrode strips such as conductive materials The diffusion between the two bands in the diffusion of the metal atoms in the long-range, and at the same time, the chemical deposition of the material deposited by the gas. The example is scattered. The undesired overburden process shows more expansion. Off-axis deposition system Since one is not perpendicular to the 詨, the angle sinks below the overhanging part Η # X's deposition' This can be recessed into the surface, thus losing the direct line of sight protection of the positively deposited material 121629.doc 200810106 source. Therefore, in order to avoid the short-circuit problem of the integrated mask, the materials and deposition processes are usually limited to those materials and processes that produce small diffusion. For example, the patterning of the luminescent layer in the OLED is typically performed without the aid of such masks, and the force is generally diffused due to the generally required correlation (4) or reduction. In order to alleviate the problem of limiting the deposition angle, U.S. Patent No. 5,7〇1,055 (published on December 23 of the following year) issued by (10) (4), et al.

It is called a two-layer patterning system of the overhanging part and the overcutting part of the polyimine. The oxide overhang portion is formed by a lithography process and a reactive ion (4) process, and the polyimine is formed by a wet etching or a combination of reactive ion etching and wet etching in an alkaline solution. Cut the part. However, the overhang portion is equivalent to the weak adhesion between the thick Si〇2 and the polyimide, so that the overhanging portion is peeled off from the foundation during the wet etching and drying process after the tunneling. In addition, the size of the polyimine is largely dependent on the wet etch parameters. The wet etch parameters can result in an unsuitable shape and uniformity problem. U.S. Patent No. 6, 〇 13, 538 (issued to the singer!) of the U.S. Patent No. 6, the disclosure of which is incorporated herein by reference. System. Depositing a layer of 2 Å on the substrate with the anode strip. The insulating layer (10) of surface thickness, ^ ^lNx or poly nitrite. 'Use the appropriate method to convert the ruthenium into a plurality of strips. Exposing the anode region for light exposure. The insulating strips sequentially form another insulating layer and a photoresist layer. (4) forming a suspension portion of the photoresist layer by a corresponding developing process and a chemical etching process 121629.doc 200810106 and Overcutting part of the insulation layer. Another multi-layer integrated mask is revealed in the award of 〇,乃(10) Roth ^ Isabelle Levesque - John Stapledon - Anne Donat-do (10)"/W of synthetic metal 422 (2〇〇1) 225_227 (published in May 1st, 2011), which uses a dense Si〇2 layer, followed by a porous 81〇2 layer, and covers the Si〇2 layer by PECVD deposition of Si#4, and It is patterned by the traditional lithography.

The pattern is transferred by etching the insulator stack in a buffered hydrofluoric acid solution. By using different etching rates (dense si〇2 layer (1〇〇nm/min), porous Si〇2 layer (25〇nm/min) and called (4〇nm/min)) The base layer of the dense Si〇2, the structure of a porous partial layer and a suspended partial layer. It is apparent that the fabrication of such integrated masks requires a physical or chemical vapor deposition process resulting in higher manufacturing costs. In addition, the acidic solution in the chemical etching process for forming the overcut portion also invades the (iv) transparent anode layer, which is oxidized steel tin.

Accordingly, a need exists to provide an alternative integrated shade mask design and method for providing at least one of the above disadvantages. SUMMARY OF THE INVENTION According to a first aspect of the present invention, there is provided an integrated «mask comprising a substrate; at least - having a base portion and a pillar structure cut by the base portion; wherein the foundation The portion is integrally formed with the overhang portion, and the overhanging portion includes an overcut surface portion that is substantially parallel to or separated from one of the edges of the overhanging portion from 121629.doc -10- 200810106 One of the surfaces extends toward the base portion. The overcut surface portion may include a groove. The base portion can be formed on a base layer formed on the substrate. The base layer can extend from the base portion to at least one point on the surface of the substrate at which a surface normal to the surface is aligned with the edge of the overhang portion. Each of the pillar structures can be formed as a strip extending over the surface of the substrate. /

. The sinister cover may further include a first electrode layer formed between the surface of the substrate and a base portion of the pillar. The substrate can include a flexible substrate. According to a second aspect of the present invention, a method of fabricating an integrated shadow mask is provided, the method comprising: providing a substrate; forming at least one pillar structure on the substrate; the pillar structure having a - base portion and An overhanging portion supported by the base portion; wherein the base portion is integrally formed with the overhanging portion and the overhanging portion includes an overcut surface portion that is substantially rotated or separated from the substrate by the edge-edge A surface extends toward the base portion. A groove is formed in the portion. The base layer, and at the basis of the method, the method further comprising the step of forming the base portion on the substrate by forming a layer on the substrate. At least one of the base layers on the surface of the substrate may extend from the base portion. At the at least one point, the surface normal of the bend at one of the surfaces is aligned with the edge of the overhang. Each of the pillar structures can be shaped to form a strip extending over the surface of the substrate. The surface and the base portion of the column. The method can further include forming a first electrode layer between the substrate table 12I629.doc 200810106. Forming the pillar structure can include forming - (iv) an adjustment on the substrate; depositing - a pillar material on the overcut adjustment; and removing the overcut adjustment to release the overhang of the pillar structure from the substrate. The substrate can include a flexible substrate. According to a third aspect of the present invention, there is provided a method of fabricating an organic light-emitting device using a mask as defined in the first aspect. [Embodiment]

The present invention describes an integrated mask having a contour of a column shape and having a shape of a pillar. The mask structure actually has no limitation on the deposition angle, the (4) to be deposited, and the red deposition of vapor deposition, and thus It can be used for the process of top electrode deposition beforehand, for example, cvd, pvD sputtering with high off-axis deposition. The present invention also describes an integrated mask manufacturing method, which is specific to (4) difficult to use with previous masks. High-yield mass production of high-resolution coffee makers. The present invention also illustrates a method of fabricating a passive matrix OLED device using an integrated mask. Figures 1 a and ib schematically show "" Cover, 〇, 5〇 section view. Design 100 and design! The only difference between the five turns is that the overhanging portion of the design t5 has an additional groove 152 on its bottom surface 154. The grooves 152 can be in any geometric shape that may exist, such as squares, rectangles, triangles, curves, and the like. Depending on the mask design, the height of the overcut portion 1 〇 2 may range from about 2 to about 2 〇 μη ΐ 2, preferably from about to about 4, to achieve high resolution. The aspect ratio (defined as the ratio of depth to height of the overcut portion I21629.doc -12- 200810106 points 102) may range from about 55 to about 3 〇, preferably from about 1.0 to about 2.0 μm. The thickness of the overhanging portion 1〇4 may be from about 2 to about 1 () μηι, from about 3 to about 6 μηη from k. The pillar base 1 〇 6 and the overhanging portion 1 (four) are integrally formed, and the overhanging portion 104 includes an overcut surface extending from the edge 1 〇 9 of the tiling portion 朝 4 toward the pillar base 106 substantially parallel to the surface 11 〇 of the substrate 112 Part 1 07. In other mask designs, the overcut surface portion of the maize 7 may extend from the edge 1〇9 of the overhanging portion 104 substantially toward the surface 11〇 of the substrate 112 from the pillar base 106. The size of the column foundation 106 is dependent on the desired resolution of the device. The more the resolution required, the smaller the column base 1 〇6. However, the column foundation 1 〇 6 is preferably wide enough to achieve the desired column strength. Preferably, the width of the column base 106 is at least the same as the total height of the columns 1〇8. The base layer ι 4 extends from the pillar base 106 to at least one point on the surface u of the substrate 112, wherein a surface normal (not shown) of the surface 11 对 is aligned with the edge 109 of the overhang portion 104. Also shown in FIGS. 1a and 1b is a metal layer 116 deposited on the masks 1 and 1 ,5, which illustrates the discontinuity of the metal layer 116 caused by the overcut portion 1〇2. Electrical shorting between adjacent strips of the top electrode 118 of the metal layer Π6 is avoided. Figure 2a shows a typical fabrication process for a '''-type mask. Starting with a patterned bottom electrode (or anode) 200 formed on substrate 201, a base layer 202 having pixels from 204 is formed. The material of the base layer 202 may be a UV curable polymer such as benzocyclobutene (BCB) and polyimine and patterned by 仏 micro-residual. Alternatively, the base layer 2〇2 may be 121629.doc -13- 200810106 by an oxide such as SiO 2 , ai 203 and Ti 〇 2 emulsified by sol-gel deposition or m deposition and by lithography Etching and/or chemical etching is performed by patterning. Then, over-cutting adjustment 2G6 is formed on the base layer 2〇2. By selecting different photoresists and changing the rotation of the Korean coating, you lose the meaning of the soil. Or both can adjust the thickness of the adjustment 206. The shape of the overcut adjustment will define the final column profile. The material of the overcut adjustment 2 0 6 can be used for the cocoa iθ cup t t The agent or solvent is easily removed by a positive photoresist or a negative photoresist. Then in the base layer 2〇2

Mask pillars 2〇8 are formed on the upper and overcut adjustments 206. The material of the mask column 2〇8 can be a UV curable polymer and patterned by standard lithography. The photoresist is preferably compatible with the preformed overcut adjustment 2〇6 to avoid or minimize the damage to the adjustment written during processing or to the extent that it is private. Another alternative is that, similar to the base layer 202, the pillars 8 can be deposited by sol-gel deposition or vapor deposition from oxides such as Si〇2, Al2〇3, and Τι〇2 and by lithography (4) and/or chemistry (4). Made by patterning. The "Γ" shaped mask 100 is formed after the overcutting adjustment 2〇6 is removed using a developer or solvent. Figure 2b shows a typical manufacturing process for a "" shaped mask 15 (Figure ib). A base layer 252 having a pixel window 254 is formed starting at a patterned bottom electrode (or anode) 25 Å formed on a substrate 251. The material of the base layer 252 can be a uv curable polymer such as BCB and polyimine and patterned by standard lithography. Alternatively, the base layer M2 may be deposited by a solvent such as Si〇2, Α!2〇3, and Τι〇2 by lyotropic deposition or ruthenium deposition and by photolithography etching and/or chemical etching. Made by patterning. Overcutting modifier 256 is then formed on base layer 252. The adjustment 256 can be adjusted by selecting not 121629.doc -14- 200810106 = resist and changing the spin coating parameters or both. The shape of the overcut adjuster 256 will define the final post profile. The material of the overcutting adjustment 256 may be a positive photoresist or a negative photoresist which can be easily detached by a 曰 颂 或 或 或 or a solvent. 25=:, for the manufacturing process of _, first in the face / " cloth - first photoresist and through the - mask (not shown) exposure to define the overcut adjuster 2 after development 255 Opening between the openings = over: the spin coating on the adjuster 256 - a photoresist 259 different from the photoresist forming the body of the overcut adjuster 256 as a buffer layer, and exposed and developed to form an opening 'for A kink portion (5) formed of the same type of photoresist as the body (5) of the overcutting adjustment is deposited. A mask pillar 258 is then formed on the base layer 252 and the overcut adjustment 256. The material of the mask pillar Mg can be a UV curable polymer and patterned by standard lithography. The photoresist is preferably compatible with the preformed overcut adjustments to avoid or minimize the extent of damage to or deformation of the adjustment 256 during processing. Another-selection system, similar to the basic (5), column W can be deposited by sol-gel deposition or vapor deposition and by lithography and/or chemistry by oxides such as Si〇2, 八12〇3, and Ti〇2. Etching is performed by patterning. After the overcutting adjustment 256 (along with the kink portion 257 and the buffer layer 259) is removed using an I agent or solvent, the "" shaped mask 15". Figure 3a shows a schematic perspective view of a finished mask 300 made by one of a passive matrix 〇 LED device. A plurality of "" shaped masks<RTI ID=0.0>>> .doc -15- 200810106 does not define the intersection of the patterned bottom electrode 3〇4 and the top electrode strip 3 G 5 to define the pixels of the light-emitting area. The subsequent organic deposition layer and the metal top electrode deposition layer 305 are patterned. * The ruthenium electrode 3G4 is deposited on the substrate 3G6 and patterned by the m lithography and the etched coating. The bottom electrode 304 and the substrate 3 〇 6 can be made of a conventional material having a white size. In the bottom illumination and double-sided illumination device #t, the substrate 3〇6 can be transparent, such as a glass plate, a quartz plate or a plastic kick plate, and is in the upper light-emitting device. In an example, the substrate 306 may be opaque, such as a Si wafer, an oxide plate, a metal plate, and the like. The substrate may be a flexible substrate such as ultra-thin glass, thin metal, and plastic. Upper illuminator In the example, the bottom electrode may be made of a transparent conductor such as a conductive polymer, IT〇, and other transparent conductive oxide (TC0), and in the example of the upper light emitting device, the bottom electrode 3〇4 may be opaque, such as metal and the like. Made of material. # A base layer (not shown) having an open window for the pixels is formed over the bottom electrode 304 and the substrate 306. Then, an integrated layer having a '"" . strip or column 302 is fabricated on the base layer. a mask 300. One or more organic layers 307 (not shown) are then deposited via the integrated mask 300 such that the organic layer 3〇7 is electrically connected to the bottom electrode 304. The organic layer 307 can include any conventionally used The organic material 307 may be a single layer, or may comprise a plurality of conventional OLED structures 'eg a single or double layer heterostructure, or one or more layers combined with an OLED organic material mixture. Organic layer 3〇7 It can be formed by spin coating, ink jet printing, vapor deposition, and the like. 121629.doc -16 - 200810106 Then a plurality of top electrode strips 305 are deposited via the integrated mask 300 and on the organic layer 307 (not The top electrode 3〇5 is electrically connected to the organic layer 307. The top electrode 3〇5 may be made, for example, of IT〇, ai, Ca, Ca/Al, Mg:Ag or LiF:Al. Preferably, a very thin top electrode is transparent such that light emitted from the organic layer can pass through the top electrode to an observer, and the device in this example can be an upper illuminator.

When a current flows between the bottom electrode 3〇4 and the top electrode % via the organic layer, the formed device emits light. (4) The system can be used to illuminate the OLED through the bottom electrode and the substrate; or to emit an OLED through the top electrode. The integrated mask 300 avoids electrical shorting between the electrodes by providing _parallel to the substrate = =!:. In addition, the integrated cover, A large and heavy (four) degree limit, make the integrated cover mouth large gauge production. Preferably, 'when the 313 is made, in the mask overcutting part of the pillars - there is a flaw in the use of the material that is heavily diffused and the furnace is flawed, that is, the organic material i ' Bu, the king is deposited, the mask is also Can not be affected by the coffin and conductive materials. It should be understood that more than one of them can be produced. The array of organic devices specifically described in the apes, π, although Figures 3a and 3b show a larger array of garments. And the array of devices, but can make the down conversion layer or use various displays as known in the art of different devices. It can also be fabricated from a large number of its organic materials - multi-color light O L E D in combination with a plurality of color filters or - eight, for example, using an array of white to produce a multi-color array. Distributed Bragg Reflector Manufactured 121629.doc 200810106 In the following 'will be explained - using a positive photoresist as a overcut modifier material and using a negative photoresist as a pillar material - a specific example of an integrated mask . At 2500 rpm, Jiang _ Gu Shishi # i, the market has σ positive photoresist AZ462 〇 spin coating onto the glass substrate Daoqing. The light was allowed to pass for 5 minutes' and then exposed to 2 mWW of broadband ultraviolet radiation for up to 2 seconds via a light mask such that only the portion of the photoresist to be removed after development was exposed. The photoresist is then developed by a commercially available developer, AZ400K. The height of the overcutting adjustment is about the cap. A negative photoresist (e.g., MF4 crucible) compatible with the Az462(R) photoresist from which the overcutting modifier was made was then coated at 1000 rpm for a second of seconds followed by 75. (: pre-bake for 20 minutes. The dried negative photoresist with a thickness of 〇8 _ is used as a buffer layer to protect the over-cutting modifier from damage during subsequent processes' and then rotate at rpm Apply another negative photoresist (such as a diluted solder mask) for 6 sec. After pre-baking at 75 ° C for 3 〇 minutes, the negative photoresist layer is passed through a light mask. So that only the portion of the photoresist that is pre-retained after exposure is exposed to ultraviolet radiation from a high-pressure mercury lamp operating at a power of 12.5 mW/cm 2 for 10 seconds. The exposed negative layer is then exposed at room temperature. Containing an aqueous solution of up to 2% sodium carbonate and then developing in sp 9899 developer to remove the unexposed negative layer, followed by flooding at the same 2 pieces as the first exposure UV exposure for at least 1 。 minutes. The dried panel is then placed in a liquid containing AZ400K and a 121629.doc 18-200810106 liquid containing acetone to make a positive photoresist preparation. And finally at the 15 〇t

@ ..., fire, phase drying for 2 hours. # A Result, a possession, a wide, a shape is only made as one. + of the whole 5 - the mask is ready for the device, the matte and the use of a positive photoresist as the over-cut, the use of -negative photoresist as a continuation of Xu..., the material resist as a pillar Material manufacturing - integrated masks

At the speed of 2500 rpni, the ancient stone is also eight rough κ cases. The transfer will be applied to the commercially available ΑΖ ΑΖ ΑΖ positive transfer to a glass substrate J 疋 board up to 40 shift buckle. The photoresist layer is co-baked at 105tB for 5 minutes and then exposed to a 125 broadband ultraviolet radiation via a light mask for 35 seconds so that only the photoresist portion to be removed after exposure to the shirt is exposed . The photoresist was then developed in a commercially available developer AZ4GGK. The dried positive photoresist layer is about 4 μm 〇 and then used at 1000 rpm—a negative photoresist (eg, mf4 (8)) that is compatible with the AZ4620 positive photoresist that produces the overcut modifier. The panel is up to 30 seconds' and then pre-flooded for 2 minutes in hunger. The dried negative photoresist has a thickness of 0.8 μη1 and acts as a buffer layer to protect the overcutting modifier from damage during the following processes. The negative photoresist layer is then passed through a light mask such that only the portion of the photoresist that is to be retained after development is exposed to a broadband ultraviolet radiation of 12.5 mW/cm for 6 seconds. The exposed panels were developed in SP9899 developer to remove the unexposed negative layers. The 22 〇〇 14 Å positive photoresist was then spin coated at 2000 rpm for about 30 seconds. The procedure is the same as that described above for the photoresist of 121629.doc -19- 200810106 AZ4620, but using a different light mask. The two layers of photoresist formed are intended to be fabricated - the overcut of the masked column with grooves Adjustments (compare Figure 1(b)) 〇Another negative photoresist buffer layer (eg MF40) Also used to protect the positive photoresist portion of the adjustment and the following procedure is the same as in Example 1. The integrated «scale design can occupy - a smaller space and is more efficient than prior art. The integrated mask The manufacturing method is particularly suitable for high-yield mass production of OLED devices that are difficult to achieve using existing masks. The integrated mask effectively avoids electrical shorting between electrodes. There is no limitation on the deposition angle, and thus it is more suitable for mass production than the existing mask. The overcut portion and the overhang portion in the mask can be accurately adjusted by designing the overcut adjustment using the deposition. Improved undercutting techniques for metal undercuts (eg, wet-formed overcuts). Wind can be made in a single (four) material rather than by multiple layers in existing masks. The integrated masking mask. The mask structure actually has no limitation on the deposition angle, the deposition to be deposited, and the tomb deposition process, and thus enables the use of π without flaws for the top electrode deposition process, such as off-axis. Cvd, pvD sputtering. Those skilled in the art should (4) 'may make many changes and / or modifications to the invention shown in the specific embodiments, ", ^ does not deviate from the broadly described invention The spirit or the norm. Therefore, each of the following examples should be considered in all aspects, I21629.doc -20- 200810106 is merely illustrative and not limiting. For example, it should be understood that the present invention And the array device, and can be used for each heart (five) hall to achieve the special passive moment. The invention can be used to manufacture the contents of the 咕i and &, (four) crying ... fee products 'including flat panel display, photoelectric d 卩. and electric photodiode Body array. In addition, the materials used to make overcutting adjustments and mask pillars in integrated masks can be organic, inorganic, and mixtures thereof.

Integration = the overcutting adjustment in the hood and the coating process of the column can be wetted and deposited and combinations thereof. Moreover, the invention is not limited to OLED applications and can be used in a wide variety of electronic devices. With regard to 〇led, the present invention is not limited to the specific examples and embodiments described. BRIEF DESCRIPTION OF THE DRAWINGS Figures la and b show schematic cross-sectional views of a Γ, 整合 type integrated shadow mask. Figures 2a and b show respective schematic cross-sectional sequence sequences illustrating the fabrication of the "and", "" type masks, respectively. Figures 3a and b respectively show a schematic perspective view and a schematic cross-sectional view of a passive matrix type OLED display device fabricated by using the "" shaped mask of Figure lb. [Key component symbol description] 100 Mask 102 Overcutting part 104 Overhanging part 106 Column foundation 108 Column 121629.doc -21 - 200810106

109 edge 110 surface 112 substrate 114 base layer 116 metal layer 118 top electrode 150 mask 152 slot 154 bottom surface 200 bottom electrode 201 substrate 202 base layer 204 pixel window 206 overcut adjuster 208 pillar 250 bottom electrode 251 open? L 254 pixel window 25 5 body 256 overcut adjuster 257 kink portion 258 mask pillar 12l629.doc -22 200810106 259 buffer layer 300 integrated mask 3 02 mask strip 304 bottom electrode 305 metal top electrode deposition layer 306 Substrate 307 organic deposition layer 308 light-emitting region 312 surface 313 of the overcut portion

121629.doc -23 -

Claims (1)

200810106 X. Patent application scope: 1 type of shadow mask, comprising: a substrate; a scorpion structure having a base portion and an asymmetric overhang portion supported by the base portion; Formed integrally with the asymmetric overhanging portion, and the nicked overhang portion includes an overcut surface portion that is substantially parallel or separated from one of the surfaces of the substrate toward the base Partial extension. 2. The mask of claim 1, wherein the overcut surface portion comprises a groove. A mask of month length 1 or 2, wherein the base portion is formed on a base layer formed on the substrate. The mask of the member 3 is wherein the base layer extends from the base portion to at least one point on the surface of the substrate, at which point the surface of the surface is unaligned with the edge of the asymmetric overhang. A mask according to any one of the preceding claims, wherein each of the pillar structures is formed as a strip extending over the surface of the substrate. 6. The mask of any of the claims, the step comprising: forming a first electrode layer between the surface of the substrate and the base portion of the pillar. 7. Any of the foregoing claims a mask, wherein the substrate comprises a flexible substrate. 8. A method of fabricating an integrated shadow mask, the method comprising: providing a substrate; forming at least one pillar structure on the substrate, the pillar structure having 121629 .doc 200810106 - a base portion and - an asymmetrical overhang portion of the base portion of the base; wherein the base portion is integrally formed with the asymmetric overhang portion and the two symmetrical overhang portion includes an overcut surface portion, the overcut surface a portion from which the edge of the asymmetric overhang portion extends substantially parallel or separate from the surface of the substrate toward the base portion. 9. The method of claim 8 wherein the step of forming includes forming in the overcut surface portion 10. The method of claim 8 or 9, further comprising forming a foundation layer on the substrate and forming the base portion on the base layer. 11. The method of claim 1G, The base layer extends from the base portion to at least one point on the surface of the panel at which the surface surface normal is aligned with the edge of the asymmetric overhang. 12. As requested in item 8 to 丨丨A method of any of the members of the present invention, wherein the parent-column structure is formed as a strip extending over the surface of the substrate. The method of any one of claims 8 to j, further comprising Forming a method according to any one of claims 3 to 13 wherein the formation of the column structure comprises: forming a substrate to be cut into - Overcutting the adjustment; licking the overcut adjustment, the pillar material, and removing the overcut adjustment to release the asymmetric overhang of the pillar structure from the substrate. 1 5 · as claimed in claim 8 to J 4 φ The method of any one of the inventions, wherein the substrate comprises a method of manufacturing an organic precursor device using a mask as claimed in any one of claims 7 to 121.