200815118 九、發明說明 【發明所屬之技術領域】 本發明係關於洗淨裝置及洗淨方法，尤其是，與用以 洗淨半導體裝置臀造裝置之狹小空間之洗淨裝置及洗淨方 法相關。 【先前技術】 通常，對半導體裝置用之晶圓等之基板實施既定處理 之基板處理裝置，具備用以收容基板實施既定處理之處理 室（以下，稱爲「腔室」）。該腔室內，會因爲既定處理所 發生之反應生成物，而產生附著物。該等附著之附著物會 成爲浮遊之粒子，該粒子附著於基板表面時，利用該基板 所製造之製品，例如，半導體裝置時，會發生配線短路， 而降低半導體裝置之產率。因此，爲了除去腔室內之附著 物，利用作業者之人工作業實施腔室內之濕洗等之維護。 然而，面對腔室內之伸縮管及排氣系零件等之狹小空 間之構成零件時，因爲利用上述之作業者之人工作業難以 進行維護，長時間持續使用該基板處理裝置時，於面對該 狹小空間之構成零件會堆積附著物。該堆積之附著物所導 致之粒子會侵入基板之處理空間並附著於基板之表面。例 如，於面對歧管附近之狹小空間之構成零件，堆積於該構 成零件之附著物若剝離，會被配設於該歧管附近之排氣泵 之旋轉葉片反彈，該反彈之粒子侵入基板之處理空間’而 使該粒子附著於基板之表面（例如，參照專利文獻1)。 -4 - 200815118 因此，傳統以來，爲了除去堆積於面對上述伸縮管及 排氣系零件等之狹小空間之構成零件之附著物，利用市販 之吸麈器，例如，利用只具有吸引口之吸麈器來吸引附著 物。 [專利文獻1]日本特願2006-00 5 3 44號 【發明內容】 然而，利用上述市販之吸麈器吸引附著物時，無法吸 引除去較大之附著物，而只能吸引除去微細之附著物，亦 即，難以充份實施面對狹小空間之構成零件之洗淨。因此 ，長時間使用基板處理裝置，會使該微細附著物堆積於面 對狹小空間之構成零件，而發生如上所述之該堆積之附著 物所產生之粒子附著於基板表面之問題。 爲了解決上述問題，藉由更換或分解面對伸縮管或排 氣系零件等之狹小空間之構成零件，來實施面對狹小空間 之構成零件之維護，然而，該維護有費時、浪費勞力及成 本之問題。 本發明之目的係在提供可有效率且充份洗淨面對狹小 空間之構成零件之洗淨裝置及洗淨方法。 爲了達成上述目的，申請專利範圍第1項所記載之洗 淨裝置，除去附著於構造物之附著物來洗淨該構造物之洗 淨裝置，係除去附著於構造物之附著物之洗淨裝置，其特 徵爲具備：將混合存在著氣體狀態之物質與液體及固體之 任一狀態之前述物質相同之物質之混合體朝前述附著物噴 -5- 200815118 出之噴出部；及吸引該被噴出之混合體及該混合體所噴出 之前述附著物之吸引部。 申請專利範圍第2項所記載之洗淨裝置係如申請專利 範圍第1項所記載之洗淨裝置，其中，前述噴出部之噴出 口係形成於前述吸引部之吸引口內。 申請專利範圍第3項所記載之洗淨裝置係如申請專利 範圍第2項所記載之洗淨裝置，其中，更具備同時連結著 前述噴出部及前述吸引部之泵，前述泵具有對應前述噴出 部之第1葉輪及前述吸引部之第2葉輪，前述第1葉輪與前 述第2葉輪爲同軸配置，前述第1葉輪之各葉片之傾斜角與 前述第2葉輪之各葉片之傾斜角爲相反。 申請專利範圍第4項所記載之洗淨裝置係如申請專利 範圍第1項所記載之洗淨裝置，其中，前述吸引部之吸引 口配置於前述噴出部之噴出口之附近。 ’ 申請專利範圍第5項所記載之洗淨裝置如申請專利範 圍第1至4項中之任一項所記載之洗淨裝置，其中，前述噴 出部係由筒狀構件所構成，該噴出部位於噴出口附近而具 有頸縮形狀。 申請專利範圍第6項所記載之洗淨裝置係如申請專利 範圍第1至5項中之任一項所記載之洗淨裝置，其中，前述 噴出部更具有將經過加熱之氣體噴向前述附著物之加熱氣 體噴出部，前述吸引部吸引該被噴出之經過加熱之氣體及 該經過加熱之氣體所噴出之前述附著物。 申請專利範圍第7項所記載之洗淨裝置係如申請專利 -6 - 200815118 範圍第1至6項中之任一項所記載之洗淨裝置，其中，前述 噴出部更具有對氣體賦予振動並噴向前述附著物之振動賦 予氣體噴出部，前述吸引部吸引該被噴出之振動賦予氣體 及該振動賦予氣體所噴出之前述附著物。 申請專利範圍第8項所記載之洗淨裝置係如申請專利 範圍第1至7項中之任一項所記載之洗淨裝置，其中，前述 噴出部更具有將單極離子噴向前述附著物之單極離子噴出 φ 部，前述吸引部於吸引口更具有用以發生與前述單極離子 之極爲逆極之電場之逆電場發生部，且吸引前述被噴出之 單極離子及該單極離子所噴出之前述附著物。 申請專利範圍第9項所記載之洗淨裝置係如申請專利 範圍第1至8項中之任一項所記載之洗淨裝置，其中，前述 噴出部更具有將電漿噴向前述附著物之電漿噴出部，前述 吸引部吸引該被噴出之電漿及該電漿所噴出之前述附著物 〇 • 申請專利範圍第1 〇項所記載之洗淨裝置係如申請專利 範圍第1至9項中之任一項所記載之洗淨裝置，其中，前述 噴出部更具有拭除前述附著物之刷部，前述吸引部吸引該 刷部所拭除之前述附著物。 申請專利範圍第11項所記載之洗淨裝置係如申請專利 範圍第1至10項中之任一項所記載之洗淨裝置，其中，前 述噴出部更具有實施前述構造物之除菌之除菌裝置。 爲了達成上述目的，申請專利範圍第1 2項所記載之洗 淨方法’係除去附著於構造物之附著物來洗淨該構造物之 200815118 洗淨方法，其特徵爲具有：將混合存在著氣體狀態之物質 及與液體及固體之任一狀態之前述物質相同之物質之混合 體朝前述附著物噴出之噴出步驟；及吸引該被噴出之混合 體及該混合體所噴出之前述附著物之吸引步驟。 申請專利範圍第1 3項所記載之洗淨方法係如申請專利 範圍第1 2項所記載之洗淨方法，其中，更具有將經過加熱 之氣體噴向前述附著物之加熱氣體噴出步驟，前述吸引步 驟吸引該被噴出之經過加熱之氣體及該經過加熱之氣體所 噴出之前述附著物。 申請專利範圍第1 4項所記載之洗淨方法係如申請專利 範圍第1 2或1 3項所記載之洗淨方法，其中，更具有對氣體 賦予振動並噴向前述附著物之振動賦予氣體噴出步驟，前 述吸引步驟吸引該被噴出之振動賦予氣體及該振動賦予氣 體所噴出之前述附著物。 申請專利範圍第1 5項所記載之洗淨方法係如申請專# 範圍第12至14項中之任一項所記載之洗淨方法，其中，胃 有將單極離子噴向前述附著物之單極離子噴出步驟、& $ 以發生與前述單極離子之極爲逆極之電場之逆電場發 驟，前述吸引步驟吸引前述被噴出之單極離子及該單極II 子所噴出之前述附著物。 申請專利範圍第1 6項所記載之洗淨方法係如申請專利j 範圍第12至15項中之任一項所記載之洗淨方法，其中，更 具有將電漿噴向前述附著物之電漿噴出步驟，前述吸引# 驟吸引該被噴出之電漿及該電漿所噴出之前述附著物。 -8- 200815118 申請專利範圍第1 7項所記載之洗淨方法係如申請專利 範圍第12至16項中之任一項所記載之洗淨方法，其中，更 具有利用刷部拭除前述附著物之附著物刷除步驟，前述吸 引步驟吸引該刷部所拭除之前述附著物。 申請專利範圍第1 8項所記載之洗淨方法係如申請專利 範圍第12至17項中之任一項所記載之洗淨方法，其中，更 具有實施前述構造物之除菌之除菌步驟。 依據申請專利範圍第1項所記載之洗淨裝置及申請專 利範圍第1 2項所記載之洗淨方法，因爲將混合存在著氣體 狀態之物質與及與液體及固體之任一狀態之前述物質相同 之物質之混合體朝附著於構造物之附著物噴出，利用該混 合體之粘性力、物理衝擊、及捲入等，可從該構造物剝離 該混合體所噴到之附著物。其次，因爲吸引該被噴出之混 合體及該混合體所噴出之附著物’可以吸引從上述構造體 剝離之附著物，因此’可以除去無法只以吸引來除去之微 細附著物。藉此，可以充份洗淨面對基板處理裝置內之狹 小空間之構成零件，因此，可以防止所製造之半導體裝置 之產率降低。 依據申請專利範圍第2項所記載之洗淨裝置’因爲噴 出部之噴出口形成於吸引部之吸引口內’於吸引口可確實 吸引該噴出口所噴出之混合體及該混合體所噴出之附著物 ，且柯以實現洗淨裝置之構成簡化。 依據申請專利範圍第3項所記載之洗淨裝置’因爲於 同時連結著噴出部及吸引部之具有對應該噴出部之第1葉 -9- 200815118 輪及對應該吸引部之第2葉輪之泵，同軸配置著著該第1葉 輪與該第2葉輪，且，該第1葉輪之各葉片之傾斜角與該第 2葉輪之各葉片之傾斜角爲相反，故噴出部可噴出氣體且 同時可利用吸引部吸引氣體，此外，可以實現泵之小型化 〇 依據申請專利範圍第4項所記載之洗淨裝置，因爲吸 引部之吸引口配置於噴出部之噴出口之附近，吸引口可確 實地吸引該噴出口所噴出之混合體及該混合體所噴出之附 著物。此外，因爲噴出部及吸引部之配置具有高自由度， 故可效率且確實地除去附著於面對更狹小空間之構造物之 微細附著物。 依據申請專利範圍第5項所記載之洗淨裝置，因爲由 筒狀構件所構成之噴出部位於噴出口附近而具有頸縮形狀 ，故該噴出部所噴出之氣體於該噴出口附近可以進行加速 。結果，可使該氣體之一部份於噴出口附近霧化，且可利 用該氣體之加速來形成衝擊波。 依據申請專利範圍第6項所記載之洗淨裝置及申請專 利範圍第1 3項所記載之洗淨方法，因爲對附著於構造物之 附著物噴出經過加熱之氣體，利用該經過加熱之氣體之熱 應力等，可從該構造物剝離該經過加熱之氣體所噴到之附 著物。其次，因爲吸引該被噴出之經過加熱之氣體及該經 過加熱之氣體所噴出之附著物，可以吸引從上述構造體剝 離之附著物，因此，可以更有效率地除去微細附著物。 依據申請專利範圍第7項所記載之洗淨裝置及申請專 -10- 200815118 利範圍第1 4項所記載之洗淨方法，對氣體賦予振動（脈動 或脈衝等）並噴向附著於構造物之附著物，利用藉由該被 賦予振動之氣體之該氣體中之分子之激烈物理衝突等，可 以從該構造物剝離該被賦予振動之氣體所噴到之附著物。 其次，吸引該被噴出之被賦予振動之氣體及該被賦予振動 之氣體所噴出之附著物，可以吸引從上述構造體剝離之附 著物，因此，可以更有效率地除去微細附著物。 φ 依據申請專利範圍第8項所記載之洗淨裝置及申請專 利範圍第1 5項所記載之洗淨方法，因爲對附著於構造物之 附著物噴出單極離子，可以利用該單極離子使該單極離子 所噴出之附著物帶單極之電。其次，於吸引口發生與該單 極離子之極爲逆極之電場，且吸引該被噴出之單極離子及 該單極離子所噴出之附著物，故可利用引力從上述構造體 剝離帶該單極之電之附著物，且吸引該剝離之附著物，因 此，可以更有效率地除去微細附著物。 • 依據申請專利範圍第9項所記載之洗淨裝置及申請專 利範圍第1 6項所記載之洗淨方法，因爲對附著於構造物之 附著物噴出電漿，可以利用該電漿，尤其是，該電漿中之 自由基之化學反應，從該構造物剝離該電漿所噴出之附著 物。其次，因爲吸引該被噴出之電漿及該電漿所噴出之附 著物，而可吸引從上述構造體剝離之附著物。因此’可以 更有效率地除去微細附著物。 依據申請專利範圍第1 0項所記載之洗淨裝置及申請專 利範圍第1 7項所記載之洗淨方法，因爲拭除附著於構造物 -11 - 200815118 之附著物，可以從該構造物剝離該附著物。其次，因爲吸 引該拭除之附著物，而可吸引從上述構造體所剝離之附著 物，因此，可確實地除去附著物。 依據申請專利範圍第11項所記載之洗淨裝置及申請專 利範圍第1 8項所記載之洗淨方法，因爲實施構造物之除菌 ，而可實施構造物之殺菌。結果，可以防止基板處理裝置 內細菌增殖所導致之污染物質之發生。 【實施方式】 以下，參照圖面，針對本發明之實施形態進行說明。 首先，針對應用本發明之實施形態之洗淨裝置之基板 處理裝置進行說明。 第1圖係應用本發明之實施形態之洗淨裝置之基板處 理裝置之槪略構成之剖面圖。 第1圖中，對半導體裝置用之晶圓W(以下，簡稱爲「 晶圓 W」）實施電漿處理，例如，實施反應性離子鈾刻 (Reactive Ion Etch.ing)處理之触刻處理裝置之構成之基板 處理裝置1 0，具備由金屬，例如由鋁或不鏽鋼所構成之腔 室Π做爲處理室。 該腔室11內，載置著例如直徑爲300mm之晶圓 W， 且，配置著可與該載置之晶圓 W —起於腔室11內上下昇 降之做爲載置台之下部電極1 2、及以與該下部電極1 2相對 之方式配置於腔室11之天花板部且對腔室11內供應後述處 理氣體之蓮蓬頭1 3。 -12 - 200815118 下部電極12介由下部整合器15連結著下部高頻電源14 ，下部高頻電源14對下部電極12供應既定之高頻電力。此 外。下部整合器1 5，降低來自下部電極1 2之高頻電力之反 射且使該高頻電力對下部電極1 2之入射效率爲最大。 於下部電極1 2之內部上方，配置著利用靜電吸著力吸 著晶圓W之ESC16。ESC16內建著由電極膜層積所形成之 ESC電極板17，該ESC電極板17電性連結著直流電源18 。ESC1 6利用直流電源18對ESC電極板17施加直流電壓而 發生之庫侖力或Johnsen-Rahbek力將晶圓W吸著保持於 其上面。此外，於ESC16之周緣配設著由矽（Si)等所構成 之圓環狀之聚焦環20，該聚焦環20使發生於下部電極12上 方之電漿朝晶圓W收斂。 於下部電極12之下方，配置著從該下部電極12之下部 朝下方延伸之支持體23。該支持體23支持著下部電極12， 藉由旋轉未圖示之滾珠螺桿實施下部電極1 2之昇降。此外 ，支持體23之周圍覆蓋著伸縮管40而與腔室11內之環境進 行隔離。此外，伸縮管40(構造物）之周圍，分別覆蓋著伸 縮管罩24、25，於該伸縮管40附近形成非常狹窄之狹小空 間。 於腔室11之側壁，配設著晶圓W之搬出入口 26及排 氣部27(構造物）。利用配設於基板處理裝置10附近之具備 LLM(載置鎖定模組）（未圖示）之搬送臂（未圖示），介由搬 出入口 26實施晶圓W對介腔室11內之搬出入。排氣部27 連結於由排氣歧管、APC(Automatic Pressure Control)閾 -13 - 200815118 、DP(Dry Pump)、TMP(Turbo Molecular Pump)等（全部未 圖示）所構成之排氣系，將腔室11內之空氣等排出外部。 此外，於排氣部2 7附近，形成非常狹窄之狹小空間。 該基板處理裝置1 〇，對腔室1 1內搬入晶圓W時，下 部電極12下降至與搬出入口 26相同之高度，對晶圓W實 施電漿處理時，下部電極1 2上昇至晶圓W之處理位置。 此外，第1圖係將晶圓W搬入腔室11內時之搬出入口 26及 下部電極12之位置關係。 此外，蓮蓬頭1 3具有面對下部電極1 2上方空間之處理 空間 S之具有多數氣體通氣孔28之圓板狀之上部電極 (CEL)29、及配置於該上部電極29之上方且以可自由裝卸 之方式支持著上部電極2 9之電極支持體3 0。此外，面對上 部電極29之處理空間S當中之相當於外周部之面，係爲配 置於腔室Π內之天花板部之圓環狀構件之遮蔽環35之內周 部所覆蓋。遮蔽環35係由例如石英等所構成，用以從電漿 保護用以將配置於上部電極29之外周部之該上部電極29螺 固於腔室1 1之天花板部之螺絲（未圖示）。 ， 上部電極29，介由上部整合器32連結著上部高頻電源 3 1，上部高頻電源3 1，對上部電極29供應既定之高頻電力 。此外，上部整合器32，降低來自上部電極29之高頻電力 之反射且使該高頻電力對上部電極29入射效率爲最大。 於電極支持體30之內部，配設著緩衝室33，該緩衝室 33連結著處理氣體導入管（未圖示）。從處理氣體導入管對 緩衝室33導入例如氧氣（〇2)、氬氣（Ar)、以及四氟化碳 -14- 200815118 (cf4)之單獨或組合所構成之處理氣體，該導入之處理氣 體介由氣體通氣孔2 8供應給處理空間S。 於該基板處理裝置10之腔室11內，如上面所述，對下 部電極12及上部電極29施加高頻電力，藉由該施加之高頻 電力於處理空間S利用處理氣體發生高密度之電漿，而產 生離子或自由基等所構成之電漿。該等生成之電漿，藉由 聚焦環1 9收斂至晶圓W表面，對晶圓W表面實施物理或 化學鈾刻。 此外，於該基板處理裝置1 〇之腔室1 1內，於上述蝕刻 時，發生反應生成物等，該反應生成物附著於腔室11內之 各構成零件，例如，附著於伸縮管40或排氣部27。 其次，針對本發明之實施形態之洗淨裝置進行說明。 本實施形態之洗淨裝置，尤其適用於上述基板處理裝置內 之面對狹小空間之構成零件之洗淨。 第2(A)圖係本發明之實施形態之洗淨裝置之槪略構成 之槪念圖。 此外，將第2(A)圖之右方稱爲「右側」，將左方稱爲 「左側」。此外，第2(B)圖係第2(A)圖之泵之葉輪之槪略 構成圖。 第2(A)圖中，洗淨裝置100具有：框體（未圖示）所圍 繞之本體120 ;由從本體120內部貫通上述框體可向右側自 由彎曲地延伸之後述吸引管112及噴出管114所構成之二重 管噴嘴110;連結於本體120內部之噴出管114，將氣體供 應裝置（未圖示）所供應之後述既定氣體供應給噴出管114 -15- 200815118 之氣體供應配管140 ;連結於本體120內部之吸引管1 12 ’ 將吸引管II2內之吸引氣體排氣至外部之氣體排氣配管150 ;以及配設於該氣體排氣配管150之途中且配設於本體120 之外部之除害裝置130。 此外，本體120內部，於二重管噴嘴11〇從左側依序配 設著第2 (B)圖所示之泵1 2 4、粒子除去過濾器1 2 2、粒子監 視器1 2 1。此外，二重管噴嘴1 1 〇，於泵1 24之左側’噴出 管1 14貫通吸引管1 12之側面而分岐出吸引管1 12，藉此， 噴出管114及吸引管112成爲單獨之配管。 泵124如第2(B)圖所示，其中心具有中心軸127，該中 心軸127藉由來自連結於該中心軸127之馬達（未圖示）之旋 轉驅動力而進行圖中之逆時針方向旋轉。此外，於中心軸 127之周圍，以等角間隔配設著從該中心軸127朝半徑方向 之外側延伸之複數葉片126a，該中心軸127及複數葉片 126a構成噴出葉輪124a，該噴出葉輪124a介設於二重管 噴嘴1 10之噴出管1 14。於該葉片126a，配設著以分別藉由 逆時針方向旋轉而使噴出管114內之氣體從第2(A)圖中之 左側流向右側爲目的之傾斜角。 此外，泵124，具有接合於各葉片126a之半徑方向外 側之端部且以環繞於各葉片126a之方式配置之環狀軸128 。此外，於環狀軸1 28之周圍，以等角間隔配設著從該環 狀軸128朝半徑方向之外側延伸之複數葉片125a，該環狀 軸128及複數葉片125a構成吸引葉輪124b，該吸引葉輪 124b介設於二重管噴嘴1 1〇之吸引管1 12。於該葉片125a -16- 200815118 ，配設著分別藉由逆時針方向旋轉而使吸引管1 1 2內之氣 體從第2(A)圖中之右側流向左側爲目的之與配設於上述葉 片1 2 6 a之傾斜角爲相反之傾斜角。 藉此，泵124可對噴出管114噴出氣體且同時利用吸引 管112吸引氣體。此外，泵124，因爲吸引葉輪124b及噴 出葉輪124a係同軸配置，故可實現泵124之小型化。 此外，本實施形態時，環狀軸128未接合於內側之各 葉片1 2 6 a而連結於上述中心軸所連結之馬達以外之其他 馬達（未圖示），藉由調整來自各馬達之旋轉驅動力，可以 使內側之葉片126a及外側之葉片125a個別地任意旋轉。 藉此，可以任意調整噴出管114所噴出之氣體之噴出力、 及吸引管1 12之氣體吸引力之強弱。 粒子除去過濾器122，用以除去吸引管1 12內之吸引氣 體中之粒子。粒子監視器1 2 1，例如，利用雷射光漫射法 來監視吸引管112內之吸引氣體中之粒子量。藉由監視該 吸引氣體中之粒子量，可以檢測出後述之洗淨處理終點。 除害裝置1 3 0，內部具有活性碳等，利用該活性碳吸著吸 引氣體所含有之有機物及有害物。 第3(A)圖係第2(A)圖之二重管噴嘴110之前端部之槪 略構成之放大剖面圖，第3(B)圖係該二重管噴嘴110之前 端部之槪略構成之立體圖。此外，第3(A)圖係利用二重管 噴嘴110洗淨附著於構造物50表面之粒子P時之說明圖。 此外，面對狹小空間之構造物（構成零件）相當於伸縮管40 及排氣部27，此處，爲了說明上之方便，利用一般化之構 -17- 200815118 造物50進行說明。 第3(A)圖中，二重管噴嘴Π0具有噴出管114、及環繞 該噴出管114之吸引管112，噴出管114之噴出口 114a係形 成於吸引管11 2之吸引口 112a內。噴出管114，於其噴出 口 1 14a附近具有頸縮部1 14b，使利用氣體供應配管140所 供應且利用泵1 24加速至既定流速之既定氣體於該頸縮部 1 14b進一步獲得加速。結果，該頸縮部1 14b之噴出管1 14 內之氣體壓力急速降低，藉由該氣體之斷熱膨張而使該氣 體中之一部份凝固，而使該氣體之一部份霧化。此外，氣 體因爲加速而形成衝擊波。藉此，噴出管114將含有由氣 體及與該氣體爲相同之物質所構成之霧氣之衝擊波噴向附 著於構造物50表面之粒子P。 本實施形態時，爲了從噴出管114噴出含有霧氣之氣 體，上述未圖示之氣體供應裝置係供應含有容易霧化之成 份之氣體。此外，本實施形態之洗淨裝置1 〇〇，因爲主要 係使用於大氣壓下及常溫下，噴出管114所噴出之氣體， 以於大氣壓下及常溫下，爲氣體或液體且融點及沸點之溫 度間隔較狹窄之昇華性及揮發性較強之氣體爲佳。從氣體 供應裝置對噴出管1 1 4內供應之氣體，例如，係氮、氬、 二氧化碳、水、乙醇。 此外，於外部诙無疏狀態之環境下，噴出管1 14所噴 出之氣體之速度，從噴出口 114a至約20mm程度之範圍爲 最大，本發明者已利用數値模擬等進行確認，以將從噴出 口 114a至構造物50之距離L2設定成20mm以下爲佳。此外 -18- 200815118 ，噴出管π 4所噴出之氣體含有有害物質時，爲了減少對 外部環境之氣體釋放量，以將從吸引口 1 12a至構造物50 之距離設定成10mm以下爲佳。因此，二重管噴嘴11〇 之前端部，以吸引管112之吸引口 112a從噴出管114之噴 出口 114a突出l〇mm程度之形狀爲佳。 以下，針對利用本發明之實施形態之洗淨裝置之洗淨 處理進行說明。 第4圖，係利用本發明之實施形態之洗淨裝置之洗淨 處理之步驟圖。 第4圖中，首先，從二重管噴嘴110之噴出管11 4之噴 出口 1 14a朝附著於構造物50表面之粒子P噴出含有氣體 及由與該氣體相同之物質所構成之霧氣A之衝擊波（第 4(A)圖）。 其次，附著於構造物50表面之粒子P，因爲該氣體之 粘性力、該氣體之物理衝擊、霧氣A之物理衝撃、以及 霧氣A之捲入等，而從構造物50表面剝離（第4(B)圖）。 其次，從構造物50表面剝離之粒子P，從吸引口 112a 被吸引至吸引管112並供應給氣體排氣配管150而排氣至外 部（第4(C)圖）。 依據第4圖之洗淨處理，從噴出口 1 1 4a將含有氣體及 由與該氣體相同之物質所構成之霧氣A之衝擊波噴向粒 子P，粒子因爲該氣體之粘性力等而剝離，並被吸引口 112a吸引，故可除去無法單純以吸引除去之微細粒子P( 附著物）。藉此，可以確實對基板處理裝置10內之面對狹 -19- 200815118 小空間之構成零件實施洗淨，因此，可以防止最終之製造 半導體裝置之產率之降低。 此外，因爲產生氣體及由同一物質所構成之霧氣，於 氣體，無需特別混入容易凝固之其他物質，氣體之處理更 爲容易，此外，可以實現氣體供應裝置之構成之簡化。 其次，針對利用本發明之實施形態之洗淨裝置之變形 例之洗淨處理進行說明。以下所示之洗淨裝置之變形例’ φ 亦可以爲於上述吸引管1 12之內部具有噴出管1 14之構成， 追加以下之構成之構成。 第5(A)圖及第5(B)圖係利用本發明之實施形態之洗淨 裝置之第1變形例之洗淨處理之步驟圖。 首先，從噴嘴210之加熱氣體噴出管214之噴出口 214a 朝附著於構造物5 0表面之粒子P噴出利用配設於氣體供應 配管1 40之途中之加熱單元1 4 1進行加熱之加熱氣體（第 5 ( A)圖）。 # 其次，被加熱氣體所噴到之粒子P，因诙該氣體之熱 應力等而從構造物50表面剝離，並從吸引口 112a被吸引 至吸引管1 12而排氣至外部（第5(B)圖）。 依據第5(A)圖及第5(B)圖之洗淨處理，從噴出口 214a 對粒子P噴出加熱氣體，粒子P因爲該氣體之熱應力等而 剝離，並被吸引口 1 12a所吸引，可以更有效率地除去微 細粒子P。 第5(C)圖及第5(D)圖係利用本發明之實施形態之洗淨 裝置之第2變形例之洗淨處理之步驟圖。 -20- 200815118 首先，利用配置於噴嘴310之振動賦予氣體噴出管314 之噴出口 314a之超音波發生裝置315對氣體賦予振動，從 振動賦予氣體噴出管314之噴出口 314a對附著於構造物50 表面之粒子P噴出振動賦予氣體（第5(C)圖）。 其次，振動賦予氣體所噴到之粒子P，因爲對該氣體 賦予振動而使振動賦予氣體中之分子產生激烈之物理衝突 等，而從構造物50表面剝離，並被吸引口 1 12a吸引至吸 引管1 12而排氣至外部（第5(D)圖）。 依據第5(C)圖及第5(D)圖之洗淨處理，從噴出口 314a 對粒子P噴出振動賦予氣體，利用分子之激烈物理衝突等 使粒子剝離，並被吸引口 1 12a吸引，可更有效率地除去 微細粒子P。 第6(A)圖及第6(B)圖係利用本發明之實施形態之洗淨 裝置之第3變形例之洗淨處理之步驟圖。 首先，從噴嘴410之單極離子噴出管414之噴出口 414a 對附著於構造物50表面之粒子P噴出單極離子供應配管 142所供應之單極離子1(第6(A)圖）。 其次，單極離子I所噴到之粒子P，因爲單極離子I 而帶單極之電，因爲配設於吸引管112之吸引口 112a附近 之電極板415(逆電場發生部）所發生之與該單極離子I爲 逆極之電場之引力而從構造物5 0表面剝離，並從吸引口 1 12a被吸引至吸引管1 12而排氣至外部（第6(B)圖）。 依據第6(A)圖及第6(B)圖之洗淨處理，從噴出口 414a 對粒子P噴出單極離子I，利用該單極離子I使粒子P帶 -21 - 200815118 電，且利用與單極離子I爲逆極之電場之引力使該粒子p 剝離，利用吸引口 112a進行吸引，可更有效率地除去微 細粒子P。 此外，水處理時，若考慮粒子p附著於吸引管112之 配設於吸引口 112a附近之電極板41 5而使該電極板41 5之 引力降低，亦可藉由於該電極板415連結振動子或加熱器 等，來防止該粒子P之附著。 第6(C)圖及第6(D)圖係利用本發明之實施形態之洗淨 裝置之第4變形例之洗淨處理之步驟圖。 首先，從噴嘴510之自由基噴出管514之噴出口 514a 介由大氣電漿發生裝置515發生電漿，將該電漿，尤其是 ，該電漿中之自由基噴向附著於構造物50表面之粒子P( 第6(C)圖）。 其次，自由基所噴到之粒子P，因爲該自由基之化學 反應而從構造物50表面剝離，並被吸引口 1 12a吸引至吸 引管112而排氣至外部（第6(D)圖）。 依據第6(C)圖及第6(D)圖之洗淨處理，從噴出口 514a 對粒子P噴出介由大氣電漿發生裝置515所發生之電漿中 之自由基，藉由該自由基之化學反應使粒子P剝離，並被 吸引口 112a吸引，可更有效率地除去微細粒子P。 第7(A)圖係本發明之實施形態之洗淨裝置之第5變形 例之主要部位之槪略構成之放大剖面圖。 第7(A)圖中，噴嘴610具有：噴出管614、環繞該噴出 管614之吸引管112。噴出管614，於其噴出口 614a，具有 -22- 200815118 旋轉刷615，該噴出管61 4使旋轉刷61 5進行旋轉且拭除附 著於構造物50之粒子P，同時噴出氣體，可確實推刷粒子 P且對該粒子P噴出氣體。藉此，可使粒子P剝離，因此 ，可確實除去粒子P。 第7(B)圖係本發明之實施形態之洗淨裝置之第6變形 例之主要部位之槪略構成之放大剖面圖。 第7(B)圖中，噴嘴710具有：噴出管714、及環繞該噴 出管714之吸引管112。噴出管714，於其噴出口 714a附近 ，具有低壓水銀燈7 1 5，該噴出管7 1 4，從低壓水銀燈7 1 5 對構造物50照射波長254nm程度之紫外線且對粒子P噴出 氣體。藉此，可除去粒子P且可實施構造物50之殺菌，因 此，亦可防止附著於構造物50之細菌之增殖所造成之污染 物質之發生。 第8(A)圖係本發明之實施形態之洗淨裝置之第7變形 例之主要部位之槪略構成之立體圖。 第8(A)圖中，二重管噴嘴810具有：具扁平形狀之噴 出管814;及具有與該噴出管814相同之扁平形狀，環繞該 噴出管814之吸引管812;且，噴出管814之噴出口 814a， 形成於吸引管812之吸引口 812a內。藉此’執行上述各洗 淨處理，可除去微細粒子P。此外，因爲二重管噴嘴8 1 0 係由具有扁平形狀之噴出管814及吸引管812所構成，具有 適合刮取之形狀，可以利用二重管噴嘴之前端部實施構造 物之刮取洗淨。 第8 (B)圖係本發明之實施形態之洗淨裝置之第8變形 -23- 200815118 例之主要部位之槪略構成之放大剖面圖。 如第8(B)圖所示，亦可以爲非噴出管91 4及吸引管912 之二重管構造，而爲將吸引管912之吸引口 912a配設於噴 出管914之噴出口 914a附近之構成。本變形例時，亦可實 施上述各洗淨處理來除去微細附著物。此外，本變形例時 ，因爲噴出管91 4及吸引管912之配置自由度較高，對於附 著於面對更狹窄之狹小空間面之構造物之微細粒子P，亦 可有效率且確實地除去。 上述之實施形態時，係針對應用本發明之基板處理裝 置爲半導體裝置製造裝置之鈾刻處理裝置時進行說明，然 而，適用本發明之基板處理裝置並未受限於此，亦可應用 於其他利用電漿之半導體裝置製造裝置，例如，CVD( Chemical Vapor Deposition) 、 PVD(Physical Vapor Deposition)等之成膜處理裝置。此外，本發明亦可應用於 離子注入處理裝置、真空搬送裝置、熱處理裝置、分析裝 置、電子加速器、FPD(Flat Panel Display)製造裝置、太 陽電池製造裝置、或物理量分析裝置之蝕刻處理裝置、成 膜處理裝置等之具有狹小空間之基板處理裝置。 此外，本發明不但適用於基板處理裝置，亦可應用於 醫療器具之洗淨裝置等。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning device and a cleaning method, and more particularly to a cleaning device and a cleaning method for cleaning a narrow space of a semiconductor device hip device. [Prior Art] A substrate processing apparatus that performs a predetermined process on a substrate such as a wafer for a semiconductor device, and a processing chamber (hereinafter referred to as a "chamber") for accommodating a predetermined processing of the substrate is provided. In the chamber, deposits are generated due to the reaction product generated by the predetermined treatment. These adhered deposits become floating particles. When the particles are attached to the surface of the substrate, when a product manufactured by the substrate, for example, a semiconductor device, a short circuit occurs, the yield of the semiconductor device is lowered. Therefore, in order to remove the adhering matter in the chamber, maintenance such as wet washing in the chamber is performed by manual operation of the operator. However, when facing the components of the narrow space such as the telescopic tube and the exhaust system part in the chamber, it is difficult to perform maintenance by the manual operation of the above-mentioned operator, and when the substrate processing apparatus is continuously used for a long time, The components of the narrow space will accumulate attachments. The particles caused by the deposited deposits invade the processing space of the substrate and adhere to the surface of the substrate. For example, in the case of a component facing a narrow space in the vicinity of the manifold, if the deposit deposited on the component is peeled off, the rotating blade of the exhaust pump disposed near the manifold bounces, and the rebounded particles invade the substrate. The processing space is attached to the surface of the substrate (for example, refer to Patent Document 1). -4 - 200815118 Therefore, in order to remove the deposits of the components that are deposited in a narrow space facing the telescopic tube and the exhaust system components, etc., a commercially available suction device is used, for example, using a suction having only a suction port. A device to attract attachments. [Patent Document 1] Japanese Patent Application No. 2006-00 5 3 44 [Contents of the Invention] However, when the deposit is sucked by the commercially available suction device, it is impossible to attract and remove a large deposit, and it is only possible to attract and remove fine adhesion. Things, that is, it is difficult to fully implement the cleaning of the components facing the narrow space. Therefore, when the substrate processing apparatus is used for a long period of time, the fine deposits are deposited on the components facing the narrow space, and the particles generated by the deposited deposits as described above adhere to the surface of the substrate. In order to solve the above problem, the maintenance of the constituent parts facing the narrow space is performed by replacing or disassembling the constituent parts facing the narrow space such as the bellows or the exhaust system parts, however, the maintenance is time consuming, labor intensive, and costly. The problem. SUMMARY OF THE INVENTION An object of the present invention is to provide a cleaning apparatus and a cleaning method which are capable of efficiently and sufficiently washing constituent parts facing a narrow space. In order to achieve the above object, the cleaning device according to the first aspect of the invention is a cleaning device that removes the adhering matter attached to the structure and cleans the structure, and removes the adhering matter attached to the structure. Further, the present invention is characterized in that: a mixture of a substance in which a substance in a gaseous state is mixed with a substance in a state of any one of a liquid and a solid is sprayed toward the deposit 5 - 200815118; and the suction is discharged The mixture and the suction portion of the deposit attached to the mixture. The cleaning device according to the first aspect of the invention, wherein the discharge port of the discharge portion is formed in a suction port of the suction portion. The cleaning device according to the invention of claim 2, further comprising: a pump that simultaneously connects the discharge unit and the suction unit, wherein the pump has a discharge corresponding to the pump a first impeller and a second impeller of the suction portion, wherein the first impeller and the second impeller are disposed coaxially, and an inclination angle of each of the blades of the first impeller is opposite to an inclination angle of each of the blades of the second impeller . The cleaning device according to the first aspect of the invention, wherein the suction port of the suction portion is disposed in the vicinity of the discharge port of the discharge portion. The cleaning device according to any one of claims 1 to 4, wherein the discharge unit is composed of a tubular member, and the discharge portion is formed by the tubular member. Located near the discharge port and has a necked shape. The cleaning device according to any one of claims 1 to 5, wherein the discharge unit further has a heated gas sprayed toward the adhesion. In the heating gas ejecting portion of the object, the suction portion sucks the heated gas to be ejected and the deposit which is ejected by the heated gas. The cleaning device according to any one of the preceding claims, wherein the ejector portion further imparts vibration to the gas and is a cleaning device according to any one of claims 1 to 6 The gas is sprayed toward the deposit to the gas discharge portion, and the suction portion sucks the gas to be sprayed and the deposit to be sprayed by the vibration imparting gas. The cleaning device according to any one of claims 1 to 7, wherein the discharge unit further has a single pole ion sprayed toward the deposit. The unipolar ion is ejected from the φ portion, and the suction portion further has a reverse electric field generating portion for generating an electric field which is extremely opposite to the unipolar ion at the suction port, and attracts the ejected unipolar ion and the unipolar ion The aforementioned deposits are ejected. The cleaning device according to any one of claims 1 to 8, wherein the discharge unit further has a plasma sprayed toward the deposit. In the plasma discharge unit, the suction unit sucks the discharged plasma and the deposit discharged from the plasma. • The cleaning device described in the first application of the patent application is as claimed in claims 1 to 9. In the cleaning device according to any one of the preceding claims, the discharge portion further includes a brush portion for wiping off the deposit, and the suction portion sucks the attached matter wiped by the brush portion. The cleaning device according to any one of claims 1 to 10, wherein the discharge unit further comprises a sterilization method for performing sterilization of the structure. Bacterial device. In order to achieve the above object, the cleaning method described in the first aspect of the patent application is a 200815118 cleaning method for removing the adhering matter attached to the structure and washing the structure, and is characterized in that the gas is mixed and present. a step of discharging a mixture of a substance in a state and a substance identical to the substance in any state of a liquid or a solid to the deposit; and attracting the sucked mixture and the attraction of the deposit discharged from the mixture step. The cleaning method according to the first aspect of the invention, wherein the cleaning method according to claim 12, further comprising a heating gas spraying step of spraying the heated gas onto the deposit; The suction step attracts the heated gas to be ejected and the attached matter ejected by the heated gas. The cleaning method according to the first aspect of the invention, wherein the method of cleaning according to the first or second aspect of the invention, wherein the vibration is applied to the gas and the gas is applied to the attached object. In the discharge step, the suction step attracts the gas to be sprayed and the deposit to be discharged by the vibration imparting gas. The cleaning method according to any one of the items 12 to 14, wherein the stomach has a monopolar ion sprayed toward the deposit. The unipolar ion ejecting step, & $, generates a reverse electric field with an electric field that is extremely opposite to the unipolar ion, and the attracting step attracts the unipolar ions to be ejected and the adhesion of the unipolar II Things. The cleaning method according to any one of the items of the first aspect of the present invention, wherein the cleaning method of the present invention, wherein the plasma is sprayed toward the deposit In the slurry discharge step, the suction step attracts the discharged plasma and the deposit deposited by the plasma. The cleaning method according to any one of the items of the present invention, wherein the cleaning method is further provided by the brush portion. In the attachment cleaning step of the object, the suction step attracts the deposit attached to the brush portion. The cleaning method according to any one of claims 12 to 17, wherein the cleaning method of the sterilization of the above-mentioned structure is further provided. . According to the cleaning device described in the first aspect of the patent application and the cleaning method described in the first aspect of the patent application, the substance in a gaseous state and the substance in any state of a liquid or a solid are mixed. The mixture of the same substance is ejected toward the adhering matter attached to the structure, and the adhering substance sprayed from the mixture can be peeled off from the structure by the viscous force, physical impact, and entrapment of the mixture. Then, since the adhered product and the attached matter ejected from the mixed body can attract the adhering matter peeled off from the above-mentioned structure, it is possible to remove the fine deposit which cannot be removed by suction alone. Thereby, the constituent parts facing the narrow space in the substrate processing apparatus can be sufficiently washed, and therefore, the yield of the manufactured semiconductor device can be prevented from being lowered. According to the cleaning device described in the second aspect of the patent application, the discharge port of the discharge portion is formed in the suction port of the suction portion. The suction port can reliably attract the mixture discharged from the discharge port and the mixture is discharged. Attachment, and the composition of the cleaning device is simplified. The cleaning device according to the third aspect of the patent application is a pump having a first impeller 9-200815118 corresponding to the discharge portion and a second impeller corresponding to the suction portion, which are connected to the discharge portion and the suction portion at the same time. The first impeller and the second impeller are disposed coaxially, and the inclination angle of each of the blades of the first impeller is opposite to the inclination angle of each of the blades of the second impeller, so that the discharge portion can eject gas and simultaneously The gas is sucked by the suction portion, and the pump can be miniaturized. According to the cleaning device described in claim 4, the suction port of the suction portion is disposed in the vicinity of the discharge port of the discharge portion, and the suction port can be surely The mixture discharged from the discharge port and the deposits discharged from the mixture are sucked. Further, since the arrangement of the discharge portion and the suction portion has a high degree of freedom, it is possible to efficiently and surely remove fine deposits adhering to the structure facing the narrower space. According to the cleaning device of the fifth aspect of the invention, since the discharge portion composed of the tubular member has a necked shape in the vicinity of the discharge port, the gas discharged from the discharge portion can be accelerated in the vicinity of the discharge port. . As a result, a part of the gas can be atomized near the discharge port, and the acceleration of the gas can be utilized to form a shock wave. According to the cleaning device described in the sixth aspect of the invention, and the cleaning method according to the third aspect of the patent application, the heated gas is ejected to the adhering matter attached to the structure, and the heated gas is used. Thermal stress or the like can be peeled off from the structure by the attached material to which the heated gas is sprayed. Then, by sucking the heated gas to be ejected and the adhering matter ejected by the heated gas, the adhering substance peeled off from the structure can be sucked, so that the fine deposit can be removed more efficiently. According to the cleaning device described in the seventh aspect of the patent application and the cleaning method described in the above-mentioned Japanese Patent Application No. Hei-10-200815118, the vibration is applied to the gas (pulsation, pulse, etc.) and is sprayed onto the structure. The adhering matter can be used to peel off the adhering matter to which the gas to be vibrated is sprayed from the structure by using a fierce physical collision of molecules in the gas to which the vibrating gas is applied. Then, by sucking the gas to be vibrated and the adhering matter which is emitted by the gas to be vibrated, the adhering material peeled off from the structure can be sucked, so that the fine deposit can be removed more efficiently. φ According to the cleaning device described in the eighth aspect of the patent application and the cleaning method described in the fifteenth aspect of the patent application, since the monopolar ions are ejected to the adhering matter attached to the structure, the monopolar ions can be used. The deposits ejected by the monopolar ions are unipolar. Next, an electric field which is extremely opposite to the unipolar ions is generated at the suction port, and the unipolar ions to be ejected and the deposits ejected by the unipolar ions are attracted, so that the single strip can be peeled off from the structure by the attraction force. Since the deposit of the electrode is attracted to the deposited object, the fine deposit can be removed more efficiently. • According to the cleaning device described in the ninth application of the patent application and the cleaning method described in claim 16 of the patent application, since the plasma is sprayed on the adhering matter attached to the structure, the plasma can be used, in particular a chemical reaction of a radical in the plasma, and the deposit ejected from the plasma is peeled off from the structure. Next, the adhered material discharged from the structure can be attracted by sucking the discharged plasma and the adhering matter of the plasma. Therefore, the fine deposits can be removed more efficiently. According to the cleaning apparatus described in the item 10 of the patent application and the cleaning method described in claim 17, the attachment to the structure -11 - 200815118 can be removed, and the structure can be peeled off from the structure. The attachment. Further, since the adhered matter is sucked and attracted by the structure, the adhering substance can be surely removed. According to the cleaning device described in the eleventh aspect of the patent application and the cleaning method described in the above-mentioned patent application, the sterilization of the structure can be carried out by performing sterilization of the structure. As a result, it is possible to prevent the occurrence of contaminants caused by bacterial proliferation in the substrate processing apparatus. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, a substrate processing apparatus to which a cleaning apparatus according to an embodiment of the present invention is applied will be described. Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a cleaning apparatus according to an embodiment of the present invention is applied. In the first embodiment, a wafer W for a semiconductor device (hereinafter, simply referred to as "wafer W") is subjected to plasma treatment, for example, reactive ion uranium engraving (Reactive Ion Etch. The substrate processing apparatus 10 having a configuration of the etch processing apparatus of the processing includes a chamber made of metal, for example, aluminum or stainless steel, as a processing chamber. In the chamber 11, for example, a wafer W having a diameter of 300 mm is placed, and a wafer W that can be lifted up and down in the chamber 11 together with the placed wafer W is placed as a lower electrode of the mounting table. And a showerhead 13 that is disposed in the ceiling portion of the chamber 11 so as to face the lower electrode 12 and supplies a processing gas to be described later to the chamber 11. -12 - 200815118 The lower electrode 12 is connected to the lower high-frequency power source 14 via the lower integrator 15, and the lower high-frequency power source 14 supplies the predetermined high-frequency power to the lower electrode 12. In addition. The lower integrator 15 lowers the reflection of the high frequency power from the lower electrode 12 and maximizes the incidence efficiency of the high frequency power to the lower electrode 12. Above the inside of the lower electrode 12, an ESC 16 that sucks the wafer W by electrostatic attraction is disposed. The ESC 16 is internally provided with an ESC electrode plate 17 formed by laminating an electrode film, and the ESC electrode plate 17 is electrically connected to a DC power source 18. The ESC1 6 uses a Coulomb force or a Johnsen-Rahbek force generated by applying a DC voltage to the ESC electrode plate 17 by the DC power source 18 to hold the wafer W thereon. Further, an annular focus ring 20 made of bismuth (Si) or the like is disposed around the periphery of the ESC 16, and the focus ring 20 converges the plasma generated above the lower electrode 12 toward the wafer W. Below the lower electrode 12, a support 23 extending downward from the lower portion of the lower electrode 12 is disposed. The support body 23 supports the lower electrode 12, and the lower electrode 12 is lifted and lowered by rotating a ball screw (not shown). Further, the periphery of the support body 23 is covered with the bellows 40 to be isolated from the environment inside the chamber 11. Further, the circumference of the bellows 40 (structure) is covered with the shrink tube covers 24, 25, respectively, and a narrow narrow space is formed in the vicinity of the bellows 40. On the side wall of the chamber 11, a carry-out port 26 for the wafer W and an exhaust portion 27 (structure) are disposed. The transfer arm (not shown) provided with an LLM (mounting lock module) (not shown) disposed in the vicinity of the substrate processing apparatus 10 is used to carry out the transfer of the wafer W into the chamber 11 through the carry-out port 26 In. The exhaust unit 27 is connected to an exhaust system including an exhaust manifold, an APC (Automatic Pressure Control) threshold-13 - 200815118, a DP (Dry Pump), a TMP (Turbo Molecular Pump), and the like (all not shown). The air or the like in the chamber 11 is discharged to the outside. Further, in the vicinity of the exhaust portion 27, a very narrow narrow space is formed. In the substrate processing apparatus 1 , when the wafer W is loaded into the chamber 1 1 , the lower electrode 12 is lowered to the same height as the carry-out port 26 , and when the wafer W is subjected to plasma processing, the lower electrode 12 rises to the wafer. W processing location. Further, Fig. 1 is a view showing the positional relationship between the carry-out port 26 and the lower electrode 12 when the wafer W is carried into the chamber 11. Further, the shower head 13 has a disk-shaped upper electrode (CEL) 29 having a plurality of gas vent holes 28 facing the processing space S in the space above the lower electrode 1, and is disposed above the upper electrode 29 and is freely available. The electrode support body 30 of the upper electrode 29 is supported by the loading and unloading method. Further, the surface corresponding to the outer peripheral portion of the processing space S of the upper electrode 29 is covered by the inner peripheral portion of the shadow ring 35 of the annular member disposed in the ceiling portion of the chamber casing. The shielding ring 35 is made of, for example, quartz or the like, and is used to protect the upper electrode 29 disposed on the outer peripheral portion of the upper electrode 29 from the plasma to the ceiling portion of the chamber 1 1 (not shown). . The upper electrode 29 is connected to the upper high-frequency power source 3 via the upper integrator 32, and the upper high-frequency power source 3 1 supplies the predetermined high-frequency power to the upper electrode 29. Further, the upper integrator 32 reduces the reflection of the high frequency power from the upper electrode 29 and maximizes the incident efficiency of the high frequency power to the upper electrode 29. Inside the electrode support 30, a buffer chamber 33 is disposed, and the buffer chamber 33 is connected to a process gas introduction pipe (not shown). A process gas composed of, for example, oxygen (?2), argon (Ar), and carbon tetrafluoride-14-200815118 (cf4), which is separately or in combination, is introduced into the buffer chamber 33 from the processing gas introduction pipe, and the introduced process gas is introduced. It is supplied to the processing space S via the gas vent 28 . In the chamber 11 of the substrate processing apparatus 10, as described above, high-frequency power is applied to the lower electrode 12 and the upper electrode 29, and high-density power is generated by the applied high-frequency power in the processing space S by using the processing gas. Slurry, and produce plasma composed of ions or radicals. The generated plasma is condensed onto the surface of the wafer W by the focus ring 19 to perform physical or chemical uranium engraving on the surface of the wafer W. Further, in the chamber 1 1 of the substrate processing apparatus 1 , a reaction product or the like is generated during the etching, and the reaction product adheres to each component in the chamber 11 , for example, to the bellows 40 or Exhaust portion 27. Next, a cleaning device according to an embodiment of the present invention will be described. The cleaning apparatus of the present embodiment is particularly suitable for cleaning the components facing the narrow space in the substrate processing apparatus. Fig. 2(A) is a schematic view showing a schematic configuration of a washing apparatus according to an embodiment of the present invention. In addition, the right side of the 2nd (A) figure is called "right side", and the left side is called "left side". Further, Fig. 2(B) is a schematic diagram of the impeller of the pump of Fig. 2(A). In the second (A) diagram, the cleaning device 100 has a main body 120 surrounded by a casing (not shown), and the suction pipe 112 and the discharge pipe are extended to the right side by being penetrated from the inside of the main body 120. A double pipe nozzle 110 composed of a pipe 114; a discharge pipe 114 connected to the inside of the main body 120, and a gas supply pipe 140 for supplying a predetermined gas supplied from a gas supply device (not shown) to the discharge pipe 114-15-200815118 a suction pipe 1 12 ′ connected to the inside of the main body 120 and a gas exhaust pipe 150 for exhausting the suction gas in the suction pipe II2 to the outside; and disposed on the way of the gas exhaust pipe 150 and disposed on the body 120 External detoxification device 130. Further, inside the main body 120, a pump 1 2 4, a particle removing filter 1 2 2, and a particle monitor 1 2 1 shown in Fig. 2(B) are disposed in this order from the left side of the double nozzle 11〇. Further, the double pipe nozzle 1 1 〇, on the left side of the pump 1 24, the discharge pipe 1 14 penetrates the side surface of the suction pipe 1 12 to separate the suction pipe 1 12, whereby the discharge pipe 114 and the suction pipe 112 become separate pipes . As shown in Fig. 2(B), the pump 124 has a center shaft 127 at the center thereof, and the center shaft 127 is counterclockwise in the figure by a rotational driving force from a motor (not shown) coupled to the center shaft 127. Direction rotation. Further, a plurality of vanes 126a extending from the central axis 127 toward the outer side in the radial direction are disposed at equal intervals around the central axis 127. The central shaft 127 and the plurality of vanes 126a constitute a discharge impeller 124a, and the ejecting impeller 124a The discharge pipe 1 14 is disposed in the double pipe nozzle 1 10 . The blade 126a is provided with an inclination angle for the purpose of rotating the gas in the discharge pipe 114 from the left side to the right side in the second (A) diagram by rotating in the counterclockwise direction. Further, the pump 124 has an annular shaft 128 that is joined to the outer end of each of the vanes 126a in the radial direction and that is disposed around each of the vanes 126a. Further, a plurality of blades 125a extending from the annular shaft 128 toward the outer side in the radial direction are disposed at equal intervals around the annular shaft 1 28, and the annular shaft 128 and the plurality of blades 125a constitute a suction impeller 124b. The suction impeller 124b is interposed in the suction pipe 1 12 of the double pipe nozzle 1 1 . In the blades 125a - 16 - 200815118, the gas in the suction pipe 1 1 2 is rotated from the right side to the left side in the second (A) view by the counterclockwise rotation, and is disposed on the blade The inclination angle of 1 2 6 a is the opposite inclination angle. Thereby, the pump 124 can eject the gas to the discharge pipe 114 while attracting the gas by the suction pipe 112. Further, since the pump 124 is disposed coaxially with the suction impeller 124b and the discharge impeller 124a, the pump 124 can be downsized. Further, in the present embodiment, the annular shaft 128 is not joined to the inner blades 1 2 6 a and is coupled to a motor (not shown) other than the motor to which the center shaft is coupled, and the rotation from each motor is adjusted. The driving force can arbitrarily rotate the inner blade 126a and the outer blade 125a individually. Thereby, the discharge force of the gas ejected from the discharge pipe 114 and the gas attraction force of the suction pipe 12 can be arbitrarily adjusted. The particle removal filter 122 is used to remove particles in the attracting gas within the suction tube 1212. The particle monitor 1 2 1 monitors the amount of particles in the attracting gas in the suction tube 112 by, for example, a laser light diffusion method. By monitoring the amount of particles in the attracting gas, the end of the washing process described later can be detected. The detoxification device 130 has an activated carbon or the like inside, and the activated carbon absorbs organic substances and harmful substances contained in the suction gas. Fig. 3(A) is an enlarged cross-sectional view showing a schematic configuration of the front end portion of the double pipe nozzle 110 of Fig. 2(A), and Fig. 3(B) is a schematic view of the front end portion of the double pipe nozzle 110. A perspective view of the composition. Further, Fig. 3(A) is an explanatory view of the case where the particles P adhering to the surface of the structure 50 are washed by the double nozzle 110. Further, the structure (constituting part) facing the narrow space corresponds to the bellows 40 and the exhaust portion 27. Here, for convenience of explanation, the generalized structure -17-200815118 creation 50 will be described. In Fig. 3(A), the double nozzle Π0 has a discharge pipe 114 and a suction pipe 112 surrounding the discharge pipe 114, and a discharge port 114a of the discharge pipe 114 is formed in the suction port 112a of the suction pipe 112. The discharge pipe 114 has a neck portion 1 14b in the vicinity of the discharge port 1 14a, and the predetermined gas supplied by the gas supply pipe 140 and accelerated by the pump 14 to a predetermined flow rate is further accelerated at the neck portion 1 14b. As a result, the gas pressure in the discharge pipe 1 14 of the neck portion 1 14b is rapidly lowered, and a part of the gas is solidified by the heat expansion of the gas to partially atomize the gas. In addition, the gas forms a shock wave due to acceleration. Thereby, the discharge pipe 114 sprays a shock wave containing a mist composed of a gas and a substance which is the same as the gas to the particles P attached to the surface of the structure 50. In the present embodiment, in order to eject a gas containing mist from the discharge pipe 114, the gas supply device (not shown) supplies a gas containing a component which is easily atomized. Further, the cleaning device 1 of the present embodiment is mainly used under atmospheric pressure and at a normal temperature, and the gas ejected from the discharge pipe 114 is a gas or a liquid at a pressure of atmospheric pressure and at a normal temperature, and has a melting point and a boiling point. Sublimation and volatility gases with narrower temperature intervals are preferred. The gas supplied from the gas supply means to the discharge pipe 1 14 is, for example, nitrogen, argon, carbon dioxide, water or ethanol. Further, in the environment in which the external enthalpy is not sparse, the speed of the gas ejected from the discharge pipe 144 is the largest from the discharge port 114a to about 20 mm, and the inventors have confirmed by digital simulation or the like to The distance L2 from the discharge port 114a to the structure 50 is preferably set to 20 mm or less. Further, when the gas ejected from the discharge pipe π 4 contains a harmful substance, it is preferable to set the distance from the suction port 1 12a to the structure 50 to 10 mm or less in order to reduce the amount of gas released to the external environment. Therefore, it is preferable that the front end portion of the double pipe nozzle 11 is protruded from the discharge port 114a of the discharge pipe 114 by a suction port 112a of the suction pipe 114 to a degree of about 10 mm. Hereinafter, the cleaning process by the cleaning device according to the embodiment of the present invention will be described. Fig. 4 is a view showing a step of washing treatment by a washing apparatus according to an embodiment of the present invention. In Fig. 4, first, from the discharge port 14a of the discharge pipe 114 of the double pipe nozzle 110, the particles P adhering to the surface of the structure 50 are ejected with a mist A containing gas and the same substance as the gas. Shock wave (Fig. 4(A)). Next, the particles P adhering to the surface of the structure 50 are peeled off from the surface of the structure 50 due to the viscous force of the gas, the physical impact of the gas, the physical flushing of the mist A, and the entrapment of the mist A (4th ( B) Figure). Then, the particles P peeled off from the surface of the structure 50 are sucked from the suction port 112a to the suction pipe 112 and supplied to the gas exhaust pipe 150 to be exhausted to the outside (Fig. 4(C)). According to the washing process of Fig. 4, a shock wave containing a gas and a mist A composed of the same substance as the gas is ejected toward the particles P from the discharge port 1 14a, and the particles are peeled off due to the viscous force of the gas or the like. Since it is attracted by the suction port 112a, the fine particles P (attachment) which cannot be removed by suction alone can be removed. Thereby, it is possible to surely clean the constituent parts of the substrate processing apparatus 10 that face the small space of the narrow -19-200815118, and therefore, it is possible to prevent the yield of the final semiconductor device from being lowered. Further, since the gas and the mist composed of the same substance are generated, it is not necessary to particularly mix other substances which are easily solidified, and the treatment of the gas is easier, and the constitution of the gas supply device can be simplified. Next, a washing process using a modified example of the washing apparatus according to the embodiment of the present invention will be described. The modification φ of the cleaning device shown below may have a configuration in which the discharge pipe 1 14 is provided inside the suction pipe 1 12, and the following configuration is added. Fig. 5(A) and Fig. 5(B) are diagrams showing the steps of the washing process in the first modification of the cleaning device according to the embodiment of the present invention. First, the heating gas which is heated by the heating unit 141 disposed on the way of the gas supply pipe 134 is discharged from the discharge port 214a of the heated gas discharge pipe 214 of the nozzle 210 toward the particles P adhering to the surface of the structure 50. Figure 5 (A)). # Next, the particles P sprayed by the heated gas are peeled off from the surface of the structure 50 due to the thermal stress of the gas, and are sucked from the suction port 112a to the suction pipe 12 and exhausted to the outside (5th ( B) Figure). According to the washing process of the fifth (A) and the fifth (B), the heating gas is ejected from the discharge port 214a to the particles P, and the particles P are peeled off by the thermal stress of the gas, and are attracted by the suction port 12a. The fine particles P can be removed more efficiently. Fig. 5(C) and Fig. 5(D) are diagrams showing the steps of the cleaning process in the second modification of the cleaning device according to the embodiment of the present invention. -20-200815118 First, the ultrasonic generating device 315 that is provided to the discharge port 314a of the gas discharge pipe 314 by the vibration of the nozzle 310 applies vibration to the gas, and the discharge port 314a of the gas supply pipe 314 is attached to the structure 50 from the vibration. The particles P on the surface are sprayed with vibration to impart gas (Fig. 5(C)). Then, the particles P to which the gas is applied by the vibration are applied, and the vibration is applied to the gas to cause a strong physical collision with the molecules in the gas, and the surface of the structure 50 is peeled off and attracted to the suction port 12a. The tube 12 is exhausted to the outside (Fig. 5(D)). According to the washing process of the fifth (C) and the fifth (D), the gas is supplied to the particles P from the discharge port 314a, and the particles are peeled off by the intense physical collision of the molecules, and are attracted by the suction port 12a. The fine particles P can be removed more efficiently. Fig. 6(A) and Fig. 6(B) are diagrams showing the steps of the cleaning process in the third modification of the cleaning device according to the embodiment of the present invention. First, the unipolar ions 1 supplied from the monopolar ion supply pipe 142 are ejected from the particles P adhering to the surface of the structure 50 from the discharge port 414a of the unipolar ion discharge pipe 414 of the nozzle 410 (Fig. 6(A)). Next, the particles P sprayed by the unipolar ions I are charged with a single pole because of the monopolar ions I, and the electrode plates 415 (reverse electric field generating portions) disposed in the vicinity of the suction ports 112a of the suction tube 112 are generated. The unipolar ion I is peeled off from the surface of the structure 50 by the attraction of the electric field of the inverse pole, and is sucked from the suction port 12a to the suction pipe 12 and exhausted to the outside (Fig. 6(B)). According to the cleaning process of the sixth (A) and the sixth (B), the monopole ion I is ejected from the ejection port 414a to the particles P, and the unipolar ion I is used to electrically ionize the particle P-21 - 200815118. The attraction force of the electric field of the inverse pole with the unipolar ion I causes the particles p to be peeled off, and the suction is carried out by the suction port 112a, whereby the fine particles P can be removed more efficiently. Further, in the water treatment, if the particles p are attached to the electrode plate 41 5 disposed in the vicinity of the suction port 112a of the suction pipe 112, the attraction force of the electrode plate 41 5 is lowered, and the vibrator may be connected by the electrode plate 415. Or a heater or the like to prevent adhesion of the particles P. Fig. 6(C) and Fig. 6(D) are diagrams showing the steps of the cleaning process in the fourth modification of the cleaning device according to the embodiment of the present invention. First, the discharge port 514a of the radical discharge pipe 514 of the nozzle 510 is plasma-generated by the atmospheric plasma generating device 515, and the plasma, in particular, the radical in the plasma is sprayed to the surface of the structure 50. Particle P (Fig. 6(C)). Then, the particles P sprayed by the radicals are peeled off from the surface of the structure 50 by the chemical reaction of the radicals, and are sucked by the suction port 12a to the suction pipe 112 to be exhausted to the outside (Fig. 6(D)) . According to the washing process of the sixth (C) and the sixth (D), the radicals in the plasma generated by the atmospheric plasma generating device 515 are ejected from the ejection port 514a by the ejection port 514a, and the radical is generated by the radical The chemical reaction causes the particles P to be peeled off and is attracted by the suction port 112a, so that the fine particles P can be removed more efficiently. Fig. 7(A) is an enlarged cross-sectional view showing a schematic configuration of a main part of a fifth modification of the cleaning apparatus according to the embodiment of the present invention. In Fig. 7(A), the nozzle 610 has a discharge pipe 614 and a suction pipe 112 surrounding the discharge pipe 614. The discharge pipe 614 has a -22-200815118 rotating brush 615 at the discharge port 614a, and the discharge pipe 614 rotates the rotating brush 61 5 to wipe off the particles P adhering to the structure 50, and simultaneously ejects gas, which can be surely pushed. The particles P are brushed and a gas is ejected to the particles P. Thereby, the particles P can be peeled off, so that the particles P can be surely removed. Fig. 7(B) is an enlarged cross-sectional view showing a schematic configuration of a main part of a sixth modification of the cleaning device according to the embodiment of the present invention. In Fig. 7(B), the nozzle 710 has a discharge pipe 714 and a suction pipe 112 surrounding the discharge pipe 714. The discharge pipe 714 has a low-pressure mercury lamp 715 in the vicinity of the discharge port 714a. The discharge pipe 714 irradiates the structure 50 with ultraviolet rays having a wavelength of about 254 nm from the low-pressure mercury lamp 7 1 5 and ejects gas to the particles P. Thereby, the particles P can be removed and the structure 50 can be sterilized, so that the occurrence of contaminants caused by the proliferation of the bacteria adhering to the structure 50 can be prevented. Fig. 8(A) is a perspective view showing a schematic configuration of a main part of a seventh modification of the cleaning device according to the embodiment of the present invention. In the eighth (A) diagram, the double tube nozzle 810 has a flattened discharge pipe 814; and a flat tube having the same flat shape as the discharge pipe 814, surrounding the discharge pipe 814; and the discharge pipe 814 The discharge port 814a is formed in the suction port 812a of the suction pipe 812. Thereby, the fine particles P can be removed by performing the above respective washing treatments. Further, since the double pipe nozzle 810 is composed of a discharge pipe 814 having a flat shape and a suction pipe 812, and has a shape suitable for scraping, the structure can be scraped and washed by the front end portion of the double pipe nozzle. . Fig. 8(B) is an enlarged cross-sectional view showing the outline of the main part of the eighth embodiment of the cleaning apparatus according to the embodiment of the present invention, -23-200815118. As shown in Fig. 8(B), the double pipe structure of the non-discharging pipe 914 and the suction pipe 912 may be disposed, and the suction port 912a of the suction pipe 912 may be disposed near the discharge port 914a of the discharge pipe 914. Composition. In the present modification, each of the above-described washing treatments may be carried out to remove fine deposits. Further, in the present modification, since the arrangement degree of freedom of the discharge pipe 91 4 and the suction pipe 912 is high, the fine particles P adhering to the structure facing the narrower narrow space surface can be efficiently and surely removed. . In the above embodiment, the substrate processing apparatus to which the present invention is applied is an uranium engraving apparatus of a semiconductor device manufacturing apparatus. However, the substrate processing apparatus to which the present invention is applied is not limited thereto, and may be applied to other methods. A semiconductor device manufacturing apparatus using a plasma, for example, a film forming processing apparatus such as CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition). Furthermore, the present invention can also be applied to an ion implantation processing apparatus, a vacuum transfer apparatus, a heat treatment apparatus, an analysis apparatus, an electron accelerator, an FPD (Flat Panel Display) manufacturing apparatus, a solar cell manufacturing apparatus, or an etching processing apparatus of a physical quantity analyzing apparatus. A substrate processing apparatus having a narrow space such as a film processing apparatus. Further, the present invention can be applied not only to a substrate processing apparatus but also to a cleaning apparatus for medical instruments.
明 說 單 簡 式 圖 rL 第1圖係應用本發明之實施形態之洗淨裝置之基板處 理裝置之槪略構成之剖面圖。 -24- 200815118 第2 (A)圖係本發明之實施形態之洗淨裝置之槪略構成 之槪念圖，（B)係第2(A)圖之泵之葉輪之槪略構成圖。 第3(A)圖係第2(A)圖之二重管噴嘴之前端部之槪略構 成之放大剖面圖，（B)係該二重管噴嘴之噴出口及吸引口 之槪略構成之立體圖。 第4圖係利用本發明之實施形態之洗淨裝置之洗淨處 理之步驟圖。 φ 第5(A)及（B)圖係利用本發明之實施形態之洗淨裝置 之第1變形例之洗淨處理之步驟圖，（C)及（D)係利用本發 明之實施形態之洗淨裝置之第2變形例之洗淨處理之步驟 圖。 第6(A)及（B)圖係利用本發明之實施形態之洗淨裝置 之第3變形例之洗淨處理之步驟圖，（C)及（D)係利用本發 明之實施形態之洗淨裝置之第4變形例之洗淨處理之步驟 圖。 φ 第7(A)圖係本發明之實施形態之洗淨裝置之第5變形 例之主要部位之槪略構成之放大剖面圖，（B)係本發明之 實施形態之洗淨裝置之第6變形例之主要部位之槪略構成 之放大剖面圖。 第8(A)圖係本發明之實施形態之洗淨裝置之第7變形 例之主要部位之槪略構成之立體圖，（B)係本發明之實施 形態之洗淨裝置之第8變形例之主要部位之槪略構成之放 大剖面圖。 -25- 200815118 【主要元件符號說明】 S :處理空間 W :晶圓 A :霧氣 1 :單極離子 P :粒子BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a cleaning apparatus according to an embodiment of the present invention is applied. -24- 200815118 Fig. 2(A) is a schematic view showing a schematic configuration of a cleaning device according to an embodiment of the present invention, and Fig. 2(B) is a schematic structural view of an impeller of a pump according to a second (A) diagram. 3(A) is an enlarged cross-sectional view showing a schematic configuration of the front end portion of the double pipe nozzle of the second (A) diagram, and (B) is a schematic configuration of the discharge port and the suction port of the double pipe nozzle. Stereo picture. Fig. 4 is a view showing the steps of the washing process using the washing apparatus of the embodiment of the present invention. φ 5(A) and (B) are diagrams showing the steps of the cleaning process according to the first modification of the cleaning apparatus according to the embodiment of the present invention, and (C) and (D) are the embodiments of the present invention. A step of the cleaning process of the second modification of the cleaning device. 6(A) and 6(B) are diagrams showing the steps of the cleaning process according to the third modification of the cleaning device according to the embodiment of the present invention, and (C) and (D) are washed by the embodiment of the present invention. A step of the cleaning process of the fourth modification of the cleaning device. Φ 7(A) is an enlarged cross-sectional view showing a schematic configuration of a main part of a fifth modification of the cleaning apparatus according to the embodiment of the present invention, and (B) is a sixth aspect of the cleaning apparatus according to the embodiment of the present invention. An enlarged cross-sectional view of a schematic configuration of a main part of a modification. 8(A) is a perspective view showing a schematic configuration of a main part of a seventh modification of the cleaning apparatus according to the embodiment of the present invention, and (B) is an eighth modification of the cleaning apparatus according to the embodiment of the present invention. An enlarged cross-sectional view of the outline of the main part. -25- 200815118 [Description of main component symbols] S : Processing space W : Wafer A : Fog 1 : Unipolar ion P : Particle
1 〇 :基板處理裝置 27 :排氣口 40 :伸縮管 5 〇 :構造物 1〇〇 :洗淨裝置 1 1 0 :二重管噴嘴 1 12 :吸引管 1 14 :噴出管 124 ··泵 124a :噴出葉輪 124b :吸引葉輪1 〇: substrate processing device 27: exhaust port 40: telescopic tube 5 〇: structure 1 〇〇: cleaning device 1 1 0 : double tube nozzle 1 12 : suction tube 1 14 : discharge tube 124 · pump 124a : Spraying the impeller 124b: attracting the impeller