TW200814358A - Structure of light emitting diode - Google Patents

Abstract

The invention provides a structure of light emitting diode. It comprises: the first substrate; the adhesive layer, forming on the first substrate; the first ohm connecting layer, forming on the adhesive layer; the epitaxial layer, forming on the first ohm connecting layer; the fist insulation layer, covering the exposed surface of the first ohm connecting layer and the epitaxial layer; the first electric conduction board and the second electric conduction board, forming in the first insulation layer, connecting electricity with the first ohm connecting layer and one end of the epitaxial layer. The arrangement of the first groove and the second groove facilitates complex series-parallel circuit connection for light emitting diode. Furthermore, the light emitting diode structure can be used in the form of single body form to operate under high voltage environment.

Description

200814358 IX. Description of the invention: [Technical field to which the invention pertains] In particular, it is applied to a high voltage ring. The invention is a high power light emitting diode structure under the structure of a light emitting diode. [Prior Art] No. 6,853,011 'discloses a light-emitting stray layer structure in which one package has a temporary substrate of a light-absorbing type, and the other substrate' then absorbs a temporary substrate Removing the ii first-pole structure forming-connecting channel to connect the first ohmic contact electrode, and =-, the trench to separate the light-emitting diode structure into two parts. A second ohmic contact The electrode is formed on the cladding layer, and a bonding metal layer is filled on the first channel and successfully formed on the second ohmic contact electrode. Since the metal layers have the same height, the generated light-emitting diode structure can be The present invention is applicable to a flip-chip structure. U.S. Patent No. 6,998,642 discloses a semiconductor structure having two light-emitting diodes in series. The semiconductor structure comprises two light-emitting diodes having the same stacked structure. And separating the two by insulating trenches, the stacked structure forms a thermally conductive substrate from the bottom; an insulating protective layer; a metal adhesive layer, a reflective protective layer; and a p-type ohmic connection a stupid layer; an upper cladding layer; an active layer and a lower cladding layer. Two p-type ohmic contact metal electrodes belonging to two light emitting diodes are formed in a reflective protective layer and an ohmic contact epitaxial layer The interlayer interface is embedded in the reflective protective layer. The stacked structure has a first trench formed in the upper cladding layer and electrically connected to the p-type electrode. The insulating trench is formed from the upper cladding layer to the insulating layer. a protective layer. Two N-type electrodes are formed on the underlying layers of the two light-emitting diodes. A dielectric layer is deposited to fill the insulating trenches and cover the sides of the first trenches. When the body is used for 5 200814358 to connect the P-type ohmic contact electrode of the first light-emitting diode and the first-type ohmic electrode, it can electrically isolate the second light-emitting diode = stack 6, 853, 011 although it can be applied in the flip chip structure, However, if there is no second', the connection between the two light-emitting diodes cannot be performed, and the processing of multiple wafers is performed in the case of over-molding two...j. Increasing the complexity of the process. Case No. 6,998,642 ^ Two =1 两 two illuminates Electrical connection between the diodes, but Metal bonding, the process must be achieved. Therefore, it is easy to produce in production efficiency and cost = °, because the entire insulating layer is placed on the two light-emitting diodes, the second connection can be connected to the two conductive Between the boards, the second substrate of the wire can not carry out the more complicated circuit layout of φ. [Summary of the Invention] The second thing is to provide a light-emitting diode structure, which can be more luminescent; the interconnection makes the more complicated. The light-emitting diode structure operating in a high-voltage environment can be more easily manufactured. For the above-mentioned effects, the present invention provides a light-emitting diode structure comprising: having a first surface and a first Two surfaces; an adhesive layer formed on the stone 曰 ^, at least two first ohmic connecting layers formed on the adhesive layer; at least two days on the 12th day, a first groove is formed between the two worm layers, each stupid a crystal layer, wherein: ϋη' is formed on the first ohmic connection layer; an active layer is formed on the lower radish 2' and an upper cladding layer formed on the active layer; - the first insulating layer, Mother-first-European scales and each of them The surface, and the shape i is between the second and the ohmic connecting layers, the first insulating layer is on the exposed portion of each of the upper and upper layers, and each of the exposed portions is formed with a U-hole and a second Opening at least two first-conducting plates, each of which is formed in each of the first openings, and electrically connected to the pmI coating layer; and at least two second conductive plates are respectively formed in each of the second openings And electrically connected to a first ohmic connection layer. 6 200814358

For the above-mentioned effects, the present invention further provides a light-emitting diode structure, wherein the first substrate has a first surface and a second surface; the adhesive layer has a shape w and a surface is dead; at least two first An ohmic connecting layer formed on the adhesive layer; and a y-two stray layer 'per-insulin layer' having: a lower cladding layer formed on a first ohmic connecting layer; a side layer formed in the lower layer a coating layer formed on the coating layer; and a second groove extending vertically through the upper cladding layer and the active layer, ^ partially penetrating the lower cladding layer; and a second insulating layer covering each - on the upper cladding layer, sub-formed between any two stray layer and any two ohmic connecting layers, the second insulating layer is formed on the upper layer and the inside of the two trenches, respectively, forming a third opening and a fourth opening, at least two fifth conductive plates, each of which is formed in each of the "third opening, and electrically connected to an upper cladding layer; and at least two sixth conductive plates, respectively formed in each of the fourth Inside the opening, there is an extension extending downwardly, the extension portion vertically passes through the insect layer, and is electrically connected to the first portion Ohmic connection layer. By the implementation of the invention, at least the following advancement effects can be achieved. The semiconductor process is simple, and the light-emitting diode structure can follow the existing process except that the second substrate requires a new mask. The diode structure can be interconnected by the second substrate, making the change and design of the complex connection circuit easier and easier to achieve. 2. Second, compared with high temperature metal bonding In view of the fact, the low-temperature adhesive layer has the effects of low temperature, high yield and low cost. IV. After the simplified connection circuit is simplified, it is easier to manufacture a small-sized, high-intensity high-voltage diode wafer unit. The diode light-emitting device has a smaller volume and a lighter weight. [Common Configuration] The features and embodiments of the present invention will be described in detail below with reference to the preferred embodiments. In the following embodiments, the light-emitting diodes The various layers of the structure are manufactured using the semiconductor molding technology known in 200814358, the details of which will not be described again. The term "etching process" or "etching method" is defined as the abbreviation of the entire 70-page optical process of culvert 1. The light-emitting diode system of the present invention can form a multi-dimensional array, which is not limited to the number in the embodiment. The above is described in advance. [First Embodiment]

Fig. 1A shows the implementation of a first substrate and a pre-processed light-emitting diode structure. The first embodiment is a combination of the substrate 21 and the front process light emitting diode structure ίο. The f lc diagram is a perspective view of the temporary substrate 11 and the etch stop layer 12 of the first item. The fabrication of a general-emitting diode structure is in the form of a semiconductor process, which has not yet been completed by the (four) edge layer and the front plate of the conductive plate. Formed on a wafer. However, when the actual light-emitting diode structure is applied, the thickness of πϊί81 is too thick and has opaque impurities, so it cannot be applied and must be removed. Therefore, the wafer is only a substrate for the process of fabricating a light-emitting diode structure, that is, a temporary substrate 11. f In the method of the substrate 11, the smoke method is the most commonly used - 1Αίzhong 2: = light one pole structure in the process of the remainder, the diode will not be overturned due to excessive remnant, so it will be set to - side termination Layer 12. In the process of rottenness, most of them will be bounced off, and by the surname, ‘de, that is, 叮 can achieve the effect of protecting the structure of the light-emitting diode. Finishing the coating will produce a light-emitting diode structure of the front process. 2〇, IT pole body structure 26 and at least two second conductive plates 27. The younger brother, the 'bar edge layer 25, at least two brothers, one turn board, the beautiful material', has a first surface 211 and a second surface 212, and the first soil is used to support the entire light-emitting diode structure. The first substrate can be a substrate of a single crystal, a polycrystal or an amorphous structure, such as glass, sapphire, carbon carbide (SiC), gallium arsenide (Gap). ), Shi Jieshi Shenhua, (GaAsP), Selenium (ZnSe), Sulfide (ZnS) or Selenium Sulfide (AmSSe)... Substrate made of special materials. In addition, the first substrate 21 can be a transparent substrate or a non-transparent substrate, which is mainly determined according to the light-emitting direction of the LED structure or the design of the reflective layer. Under the two-way light, the first substrate 21 will be the county-Cali. ^ An adhesive layer 22 is formed on the first surface 211 for bonding the first substrate. , the first ohmic connection layer 23. The adhesive layer 22 can be selected from the group consisting of: benzocyclobutene ^ t:f〇b::tene, BCB), an epoxy resin (ep〇xy), a methyl methacrylate (pMMA), a Polymerization = ymer) f - spin coating glass (Spin_〇n glass, s〇G). The adhesive layer 22 can be a transparent adhesive layer 22 or a 2G ι branch or an anti-riding ^ 2 test! The upward/downward two-way light out 'the adhesive layer' must be - the first is the invention Light-emitting diode structure 2G, which is an example of the entanglement of the invention. All of the inventions have the J-layer 23 and the worm layer 24, which are all connected to the first ohmic layer, so the unit is divided into a substrate. 21 and the adhesive layer 22 are divided, and the formation of the example ^ and the euro 23 and the insect layer % unit. Or 6's B1, Β2, Β3···, etc. can be doubled, the first - _ layer 23 is connected to the layer 3 曰, which can be _ way, with the area: the first ohmic connection is the same The light source is a single element, which is also formed by the side of the square cat day layer 24 by the engraving process to form the first groove 200814358 groove 291. The formation of the first trench 291 will cause the first ohmic connection layer to create a single, bare exposed portion 231, thereby facilitating the arrangement of the second conductive plate 27, and also because of the arrangement of the second/conductive plate 27, The light-emitting diodes 28 of the unit can be easily designed in φ/parallel, thereby making the high-voltage light-emitting diodes easy to manufacture. &#3A is a diagram showing an example of a method for producing the first etch in FIG. The third example is the production method of the second remnant after the completion of the third drawing. The unit division of the first ohmic connection layer 23 and the fabrication of the first trench 291 can be

3 is achieved by different side steps. In many fine steps, the first side, first engraved with the same size and relative position between the two first ohmic layers, the second side, the first side and then the first groove The size of 291, this way makes the process easier. v = enamel layer 24' having at least one undercoat layer 24 and one active layer 242 cladding layer 243. Each of the underlying cladding layers 241 is formed on the underlying layer 241 of the H-connection iβ", and the -p-type canned indium gallium (AiGaM) can be formed on the lower cladding layer 241, which can be (DoubT H t shell structure (Smgle, a double heterostructure Well or - multi-quantum fat structure __ Quantum coating layer l43 ' formed on the gamma layer 242, the upper coating layer tears the PI, the aluminum indium enamel coating layer. A second ohmic connection layer 292 can be formed between the upper cladding layer 243 and the first conductive plate 26. The second ohmic connection layer 292 is formed. 奋 = 图 图 进 进 进 进 歩 歩 第 第 第 第 第 第 第 第 第 i i The material of the whistle layer 25 is, for example, the material of the oxidized willow i ()), which covers the bare surface of the argon-'23 and each of the upper cladding layer 243, and is connected between the layers 23. The arrangement of the first insulating layer 25, except that the light-emitting diodes 28 are completely isolated and do not affect each other, can also be determined that the first shop 28 is not affected by the external environment, such as moisture or moisture, thereby detracting from the life of 200814358. An insulating layer 25 is formed on each of the upper cladding layer 243 and each exposed portion 231 of the first ohmic connecting layer 23, and a first opening 251 and a second portion are respectively formed. The first opening 251 and the second opening 252 of the hole 252' are formed by etching after the first insulating layer 25 is formed. The first conductive plate 26 is respectively formed in the first opening of each unit. 251, and is connected to the corresponding upper cladding layer 243. The second conductive plates 27 are respectively formed in the second openings 252 of each single 7G+, and are electrically connected to the corresponding first ohms. The connection 23 is provided by the first conductive plate 26 and the second conductive plate 27 to provide power, so that the epitaxial layer 24 can receive power to generate light.

= When the light-emitting diode structure 20 is designed as a face up structure. At this time, the material 2,1 is designed as a "transparent substrate", and the adhesive layer 22 is formed as a transparent surface. The second surface 212 of the first substrate 21 forms a reflective layer (Fig.: U hunting by the reflective layer The light emitted by the crystal layer 24 is reflected, so that a better grade can be achieved. In addition, it can only be a transparent adhesive layer 22, and the reflective layer (not shown) is formed and adhered. Between 22, this can also achieve the light reflection _, 7 Descarte structure 20 achieves better light extraction efficiency. Its 1 picture is the luminous diode structure of the present invention 2 〇 歩 歩 歩 - - - =Fig. ί 5B 图 Α·Α _. The first crime figure ^ The light-emitting diode structure V / Figure 2 5 is the equivalent of the 5th figure. The crystal structure (flip-chip). The younger brother has a substrate 50, so that an adhesive layer 22 can be produced as a transparent adhesive. The material 21 is a transparent substrate and the surface is μ, and the third surface S t substrate 5G At least one third conductive plate 53 is provided, and each of: -H has two second conductive plates 52 and at least two fourth and sixth wires are electrically connected to the second plate 5 and the fourth conductive plate 53 respectively. Point third conductive extension brother ": conductive 26 and the second conductive plate 27. The conductive plate 53 brother four, except that the conductive plate may be directly

The area of 200814358 is enlarged, and the two sides are electrically connected to each other, and the 导电 ΪΪ Ϊ ( 10 10 10 10 10 10 10 10 10 10 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三 第三Lai axis. The use of -A material, =, will allow the string/parallel circuit between the different light-emitting diodes 28 to be performed on the substrate. Due to the area and thickness of the second substrate, a very complicated circuit structure is handled. When the complex circuit π is constructed, the application of the light-emitting diode structure 2〇 will be more diverse. “ f two-substrate 50 can be a silicon substrate, a printed circuit board, and a multi-layered printed circuit board. Printed Circuit Board (PCB) or a ceramic substrate = er = c substrate). For example: oxidation 12〇3), nitriding, although reducing the oxidation bond ^〇), low-temperature co-fired multilayer ceramics (L〇w Dinger, this cafu eram: c, LTCC) or co-fired multi-layer ceramic lion e teeth

Ceramlc, HTCC)...etc. In the design of the ΐΐ ΐΐ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The step-by-step forms a reflective layer. A reflective layer may also be formed on the exposed surface of the first insulating layer 25, that is, the exposed surface of the first insulating layer 25. Each of the above reflective layers may be selected from the group consisting of aluminum (Α1), silver (Ag), and gold (...). When making the reflective layer, it must be noted that if the reflective layer is a conductive material, the reflective layer cannot be in contact with the third conductive plate η or the fourth conductive plate 53 or the first conductive plate 26 or the second conductive plate 27, and The reflective layer is configured to maintain a certain gap with each of the conductive plates to avoid a short circuit between the respective conductive plates. Fig. 6A is a cross-sectional view of a light-emitting diode structure 2 of the present invention, further forming a first conductor layer 293 (along the line B-B of Fig. 6B). Fig. 6B is a plan view of the top view of Fig. 6A. The light emitting diode structure 2〇 further includes a first conductor layer 293 ′ which is formed with at least one conductor and covers the first insulating layer 12 200814358 and a second conductive nJ 蛉甩 plate 26 each connected to a different unit . This will easily connect different cigarettes #- _ _ % into series/parallel. The first conductor π can also be subjected to a complicated circuit layout by the first insulating layer 25 浐=J, so that the first conductor layer 293 [second embodiment] 30^ layer 23, at least two Lei The crystal layer 24, a second insulating layer, a first ohmic connection _32, and at least two sixth conductive plates 33. ,,, e, at least two fifth conductive plates. The only example of the light-emitting diode structure is 3〇, you can go #

From the drawing to the process of FIG. 1C, the bonding layer 22 is coated with a front-side light-converting diode 28 on the 1st circle of the embodiment, and is bonded to the substrate 11 and formed in the crystal termination layer. The polar body structure 30. The first substrate 21 having a first surface 211 is mainly used to support the entire I-surface 212, which is a single crystal, polycrystalline or amorphous. The substrate 21 can be a substrate made of a material such as glass or blue, such as gemstone, carbon cut, gallium phosphide, or gallium. In addition, the first ^ & zinc or selenium sulfide ... non-transparent substrate, which is mainly in accordance with the design of the light-emitting two; H 冓ϋ transparent substrate or layer, if you want to guide the direction at the same time; 2 3 2 = The light direction or i-ray substrate 21 must be a transparent substrate. The first adhesive layer 22 is formed on the first surface 211 and the first ohmic connecting layer 23. The adhesive layer 22 is selected from the group consisting of a first substrate 21, a resin, a silicone resin, a poly(methacrylic acid methyl vinegar: 1 2:1 olefin, an epoxy resin, and the like. Adhesive layer 22 can be H "_旋 = $ 13 200814358 beer and go to Dan - say a job, choose a 3 〇 out of the light must be - through the day 1 2 / 2 ^ lead up 7 down two-way light, then Adhesive layer 22, Fig. ί , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Direction or reflection layer "Two-way light, then sticky; Cut stone is eight μ structure 30, has completed the example:: V / Lu: and the second groove 34 after the production of the cross-sectional embodiment. This real _,- The first diode structure 3G is also ^, so the unit is divided into f [鸠23f cut 1 can also form, for example, μ, α2, α3···, etc., the layer 24, the first ohmic connection layer 23, Adhesive layer 22. On the 23rd, it can be a -p-type connection layer. The county can be divided into the first layer by the way, to distinguish the non-single-child's brother-connection cut: as the light-emitting diode 28 The monomer 'is also etched by the etched side to make a different early-every day-to-day layer 24, which has: - a lower coating layer 24, an active layer 242, an upper cladding layer 243, and A second groove %. 曰. per- The cover layer 241 is formed on the first ohmic connection layer 23, and the upper layer 241 is a p-type phosphating indium cladding layer. The active layer 242 is formed on the cladding layer 241, which may be a single heterostructure, A double heterostructure or a multi-layer structure. The upper cladding layer 243' is formed on the active layer 242 and the upper cladding layer 243 is an N-type aluminum indium gallium nitride coating layer. The second groove 34 is perpendicularly penetrated through the upper cover layer 243 and the active layer ',: 'two through the lower cladding layer 241. By the gap between the second grooves 34, the two sides of the second groove i can be The active layer 242 and the upper cladding layer 243 are electrically isolated: for the convenience of manufacturing on the process, the second trench 34 can be formed around the periphery of the sixth guide ii 33 so that the active layer 242 can The electrical isolation is effectively enabled, so that the extension portion 331 of the thunder plate 33 can smoothly conduct power to the first 殴 ^ layer and to make the subsequent process easier to operate, thereby fabricating the second insulating layer 31. When 曰,: and the second trench 34 is filled with the second insulating layer 31. Nissho '200814358 second insulating layer 31 side such as oxygen cut f, which covers the exposed surface of each of the upper cladding layers 243, and is formed between any two epitaxial layers 24 and any two first ohmic connection layers 23. By the arrangement of the second insulating layer 31, in addition to different units Luminous: Extreme, !8 Complete isolation does not affect each other, but also ensures that the LED is not subject to external purity, such as water vapor or occupation, depending on the life. The second insulation layer is on the top coating. 243 and the inner side of the second groove 34, the third opening hole and the fourth opening hole 36 are formed, and the third opening hole 35 and the third hole hole 36 are attached to the second insulating layer 31, and then The etching method is used. The fifth conductive plate 32 is formed in each of the third openings 35, and is electrically connected to the corresponding coating layer 243. Further, between the upper cladding layer 243 and the fifth conductive plate 32, a second ohmic connection layer 292 is formed. The sixth conductive plates 33 are respectively formed in each of the Γ = holes 36, which have an extending portion 331 extending downwardly, an extending portion 331 , a straight-through layer of the epitaxial layer 24, and electrically connected to the corresponding first Ohmic connection layer 23,. = the fifth conductive plate 32 and the sixth conductive plate 33 are arranged to provide power so that the stupid layer 24 can receive power to produce light. 9 When the light-emitting one-pole structure is designed as an upper structure. At this time, the first substrate, 1 is designed as a transparent substrate, and the adhesive layer n is formed into a transparent adhesive layer. The second surface 212 of the material 21 forms a reflective layer, which can be generated by the inverse 4 The light is reflected, so that the light-emitting triode structure can achieve a good light-emitting efficiency. In addition, it is also possible to design only the adhesive layer 22 to be transparently layered 22' and to reflect the shape of the reflective layer - the substrate 21 is turned 2 = ' so that it can also be _ _ _ _, the same makes the light dipole ^吉制30 achieves better light extraction efficiency. Fig. 8 is a cross-sectional view showing the embodiment of the light-emitting diode structure 3 of the present invention further combined with a second substrate 50. The light emitting diode structure 3〇 further includes a second 50 such that a flip chip structure is produced. In the flip chip structure, the first substrate u is a transparent substrate and the adhesive layer a is a transparent adhesive layer 22. The second substrate 刈 15 200814358 has a _ third table, a conductive plate 52 and at least two trousers two surface 51 formed with at least two third \ - brother four anti-53, each second guiding thunder 52 Fen Chu 53, respectively, by solder joint 60 emperor (four) twisted brother a ¥ electric wrench 52 and the fourth four conductive plate conductive plate 33. The electric cymbal is connected between the corresponding fifth conductive plate 32 and the sixth surface, and between the private board 52 and the fourth conductive board 53, except that the conductive conductive board 52 and the fourth conductive board can be directly connected. The second substrate 5 〇 式 可 可 可 杂 杂 杂 杂 。 。. The use of _ is performed on the substrate 5G in which the second light-emitting diodes 28 are electrically connected to each other. Due to the area and thickness of the second base (4); 3 = construction! rit ^ This is sufficient to cope with the very _ structure. # Complex circuits,, and mouth structures, the application of the light-emitting diode structure 30 will be more diverse. The substrate 50 can be a stone substrate, a printed circuit board, or a printed circuit. For example, · Oxidation Ming, Niobing Ming, yttrium oxide low-temperature co-fired multi-layer Tao Fan or high-temperature co-fired multilayer ceramics...etc. ~ 夕 ♦ In the design of the flip chip structure, in order to make the light-emitting diode 28 have better light-emitting effect, it can be on the third surface 51 of the second substrate 5〇, on the third conductive plate 52 and the A portion other than the four $% plate 53 is further formed with a reflective layer. Alternatively, a second anti-layer may be formed on the second insulating layer 31, that is, the exposed surface of the second insulating layer 31. Each of the above reflective layers may be selected from one of a material such as one, one silver, one gold, and the like. When making the reflective layer, it must be noted that if the reflective layer is a conductive material, the reflective layer cannot be in contact with the third conductive plate 52 or the fourth conductive plate 53, nor with the fifth conductive plate 32 or the sixth conductive plate 33, and Preferably, the reflective layer can maintain a certain gap with each of the conductive plates to avoid short circuit between the conductive plates. In order to make the light-emitting diodes 28 of the light-emitting diode structure 30 easier 16 200814358, in order to make the light-emitting diode structure 3G and the second substrate 5, the society is more expensive. The financial red test 32帛f body sound 37 Hit Alum light-emitting diode structure 3 into a single turn to form a second conductive two-conductor layer 37, which is formed with at least a strip conductor 1, ^ ^: step into one And the two ends of each conductor are connected to the 'sixth conductive plate 33' on 31. This will easily be able to turn the brother = reverse = joint / parallel. The complicated circuit layout design is performed by the support of the second insulating layer 31. ^ Make a conductor layer 37 can also enter 28, two insulation layers on the second day of the second to the same as the 10G diagram of the same or similar complex circuits, especially when fj 10 = map formation of the flip-chip structure, the relevant circuit It is easier to use the same - the substrate is modified or still; the package: the equivalent modification [simplified illustration] ί: the diagram is a first substrate and the front process LED structure The combination has not been combined: 1Β is the implementation of the combination of the -substrate and the front-process LED structure =C. Fig. 2 is a perspective view showing the embodiment of the light-emitting diode of the present invention. Fig. 3A is the second figure for the first part. Fig. 3B is the third figure for the 3A figure. examples. The implementation method of the secondary etching of the 仃 仃 苐 图 4 picture is the second picture to complete the first picture. Cross-sectional view of the warhead layer and the conductive plate. Fig. 5A is a view showing an embodiment of the light-emitting two-section of the present invention. The body and the body are combined into a second substrate

Fig. 5B is a plan view of the top view of Fig. 5A. The 5C picture is the equivalent circuit diagram of the f5A picture. The light-emitting dipole structure of this (four), Wei-歩 formation-the first guide

A cross-sectional view of the body layer. 7 to music V f 6B is a plan view of the top view of FIG. 6A. Figure 7 is a cross-sectional view of the light-emitting diode and the second groove after the fabrication of the second embodiment of the present embodiment == Figure & Early 4 small stupid crystals: ί She reads light, loses, combines - second base Figure 9 is a cross-sectional view of a light-emitting diode of the present invention. body,,,. STRUCTURE - (4) 1 二 导体 至 至 第 第 第 第 第 第 第 第 第 第 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路Engraving layer 18 200814358

20 light-emitting diode structure 21 first substrate 21! first surface 212 second surface 22 adhesive layer 23 first ohmic connecting layer 23, first ohmic connecting layer 231 exposed portion 24 stray layer 241 underlying coating layer 242 Layer 243 overlying layer 25 first insulating layer 251 first opening 252 second opening 26 first conductive plate 27 second conductive plate 28 light emitting diode 291 first trench 292 second ohmic connecting layer 293 first Conductor layer 30 light-emitting diode structure 31 second insulating layer 32 fifth conductive plate 33 sixth conductive plate 331 extension portion 34 second trench 19 200814358 35 third opening 36 fourth opening 37 second conductor layer 50 Two substrates 51 third surface 52 third conductive plate 53 fourth conductive plate 60 solder joint X3Xt - early A A2, A3 · · · AA line BB line

20

Claims (1)

200814358 X. Patent application scope: 1. A light-emitting diode structure comprising: - a first substrate having a - surface and a second surface; an adhesive layer formed on the first surface; a second ohmic connection layer formed on the adhesion layer; and a bismuth layer, wherein the epitaxial layer is formed with a -th-groove, each of the epitaxial layers having: a lower cladding layer formed on _the first ohmic connection layer; an active layer 'formed on the lower layer; and an upper cladding layer formed on the active layer; the ijsi edge layer' covers each of the first ohmic connection layer and Each of the upper surface of the exposed surface is formed between any of the first ohmic connecting layers, and the second inner insulating layer is disposed at each of the upper cladding layer and each of the first ohmic connecting layer Forming a first opening and a second opening respectively; a dipole-conductive plate is formed in each of the first openings, and is electrically connected to an upper cladding layer; and to t second The conductive plates are respectively formed in each of the second openings, and are electrically connected to the first ohmic connection layer. The light-emitting diode structure of item 2, wherein the first 3^ is a substrate of a precursor, a polycrystal or an amorphous structure. The light-emitting diode structure of the above-mentioned item is the light-emitting diode structure of the first aspect of the invention, wherein the first ohmic connection layer is a p-type ohmic connection layer. 7. The light-emitting diode structure according to claim 2, wherein the lower cladding layer is a P-type aluminum indium gallium arsenide coating layer and the upper cladding layer is an N-type phosphating layer. Aluminium indium gallium coating. 8) The light-emitting diode structure according to claim 1, wherein the active layer is a single heterostructure, a double heterostructure or a multiple quantum well structure. The light-emitting diode structure of claim 1, wherein a second ohmic connection layer is formed between the upper cladding layer and the first conductive plate. The light-emitting diode structure of the first aspect of the invention, wherein the first substrate is a transparent substrate and the adhesive layer is a transparent adhesive layer, and a reflection is formed on the second surface. Floor. The light-emitting diode structure according to the above-mentioned claim, wherein the adhesive layer is a transparent adhesive layer, and the fresh-substrate and the hybrid are formed with a reflective layer. 12. The light-emitting diode structure according to the above-mentioned patent scope, further comprising a second H having a third table, wherein the third surface is formed with at least two conductive plates and at least two fourth conductive plates. Further, the second substrate is formed with a plurality of junctions for electrically connecting the third conductive plate and the fourth conductive plate, and the second conductive plate and the fourth conductive plate are respectively soldered The electrical connection is made to the corresponding first conductive plate and the second conductive material is a transparent transparent layer, and the layer is a through-layer layer and a substrate 13 is as described in the patent item a diode structure in which the first substrate is a substrate, a printed circuit board, or a ceramic substrate: please follow the light-emitting diode structure described in Item 13, wherein the first On the surface, a third reflective plate and a portion other than the thin conductive plate are formed with a reflective layer. 22 200814358 15_如Γϊί, the light-emitting diode structure according to Item 13, a reflective layer is formed on the first layer of the edge layer. , Τ 昂 16 16 16 16 16 16 16 16 16 16 16 16 第 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光The connection is the same as that of the second conductive layer or the first conductive plate. The second light-emitting diode structure of the second aspect of the invention includes: a first substrate having a first surface and a second surface; an adhesive layer formed on the first surface ; At least two first ohmic connecting layers are formed on the adhesive layer; at least one stupid layer, each of the stray layer having: a lower cladding layer formed on the first ohmic connecting layer; Formed on the lower cladding layer; a top coating layer formed on the active layer; and a covering layer penetrating directly through the upper cladding layer and the active layer, and partially covering the second insulating layer On each of the upper cladding layers, ii is formed between any two of the layers, and between the layers and any two of the first ohmic connection layers, the second insulating layer is formed on the 'upper layer and the inside of the second trench, respectively forming a third Opening a hole; at least two fifth conductive plates are formed in each of the third and electrically connected to an upper cladding layer, and at least one sixth conductive plate is formed in each of the first The four openings have an extension extending downwardly, the extension extending perpendicularly through the epitaxial layer and electrically connected to the first ohmic connection layer. 18. The light-emitting diode structure of claim π, wherein the first substrate is a single crystal, a polycrystalline or a non-crystalline substrate. 19. The light-emitting diode structure of claim 17, wherein the substrate is a transparent substrate. /, 中忒弟20. If the light-emitting diode structure described in claim 17 is applied, the layer is selected from the group consisting of benzocyclobutene, an epoxy resin, a phthalocyanine, methyl benzoate, and a polymerization. One of the materials and a spin-coated glass, etc. ^Zhejia C21. The light-emitting diode structure as described in the scope of the patent application, 1 = the layer is a transparent adhesive layer. 〃 22· The illuminating diode structure described in the πth item of the patent application, the one ohm connecting layer is a P plastic ohmic connecting layer. VIII. The light-emitting diode structure according to claim 17, wherein the coating layer is a bismuth-type aluminum indium gallium arsenide coating layer and the bismuth-type scalar aluminum indium gallium layer Covered layer.曰 'Ν 24· As claimed in claim 17 of the illuminating diode structure, the layer system is a single heterostructure, a double heterostructure or a multi-quantum ^^ 25 · as claimed in the 帛 17 item The light-emitting diode structure is described in which the second insulating layer is formed in the trenches. The light-emitting diode structure of claim 17, wherein a second ohmic connection layer is formed between the cladding layer and the fifth conductive plate. ' Λ 27 · If you apply for the succession (4) π tearing the light-emitting diode structure, θ where - the substrate is - the transparent substrate and the hybrid layer is - a transparent layer, and a reflective layer is formed on the surface . The light-emitting diode structure of claim 17, wherein the adhesive layer is a permeable layer and a reflective layer between the first substrate and the adhesive layer. The light-emitting diode structure of claim 17, further comprising a substrate having a third surface, the third surface being formed with at least a second conductive plate and at least two fourth conductive a plate, and the second substrate is formed with a composite 24 200814358 -?,, σ structure 'for electrically connecting the third plates' and a mother - the third conductive plate and the first W plate and the fourth conductivity The fifth conductor is connected to the corresponding fifth conductor by the solder joint = the transparent substrate and the adhesive sheet is further referred to as the third embodiment. 31 3 is a - Qing, - printed circuit board; the material of which === the third conductive plate and the fourth conductive plate 32. The light-emitting diode structure of claim 29, wherein a reflective layer is formed on an insulating layer. Λ 33. The light-emitting diode structure according to claim 17, wherein the surface height of the sixth conductive plate of the charm five conductive plates is the same ^ height. 34. The light emitting diode structure of claim π, further comprising a second conductor layer formed with at least one conductor and covering the second insulating layer, and each of the conductors The terminals are electrically connected to the fifth conductive plate or the sixth conductive plate of different units, respectively. Λ 25