TW200931684A - Light-emitting element and light-emitting device using the same - Google Patents

Abstract

To provide a light-emitting element having a structure with which a local current density is uniformed and an excellent heat dissipation characteristic is obtained and having a long life time and a high reliability while obtaining a high-efficient light emission even in a large current region, and to provide a light-emitting device using the light-emitting element. A light-emitting element has a first electrode (21) and a second electrode (21) opposing to each other and electrically connected to respective first conductivity type layer (11) and second conductivity type layer (12) both constituting a semiconductor structure (10). The first electrode (21) has a pair of electrode extending portions (30) opposing to each other and formed on an electrode forming surface (15) of the first conductivity type layer (11) positioned on the light outputting side. In the opposing direction of the pair of electrode extending portions (30), a distance (l1), which is half the distance between the electrode extending portions (30), is less than a distance (L2) from the electrode extending portion (30) to an edge of the electrode forming surface (15).

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a semiconductor light-emitting device, particularly an element structure relating to an electrode having a semiconductor element sandwiched therebetween. [Prior Art] A light-emitting element for laminating a P-type semiconductor layer and an 11-type Φ semiconductor layer in which a light-emitting layer is sandwiched is disclosed, in order to diffuse a current supplied to the two semiconductor layers to a semiconductor plane, A technique in which an electrode extension portion in which a connection portion of an external electrode extends is formed along a peripheral portion of an electrode formation surface (for example, Patent Document 1). As an example, in the light-emitting element 100 shown in the plan view of Fig. 14, the p-type pad portion 102 connected to the P-type semiconductor layer is disposed in the central region of the element. Further, the n-type pad portion 101 connected to the n-type semiconductor layer is formed at a corner portion of the rectangular electrode forming portion, and the electrode extension portion l〇la extending from the n-type lining pad portion 101 is completely formed. The surrounding electrode l〇b is formed on all four sides surrounding the electrode forming surface. By surrounding the 'electrode 1 0 1 b, the current must move the n-type semiconductor layer to the lateral average, and the distance is lowered. As a result, the series impedance of the device can be lowered, and the uniformity of the current density is improved. Further, in recent years, in response to the demand for higher output words, the area of the electrode structure on the side of the n-electrode is increased from the surrounding electrode to the periphery of the element, that is, from the surrounding electrode to the outer periphery. The increase in the range of the surrounding electrodes is sought. In addition, it is also developed that the electrode extension portion is divided into the electrode extension portion by the extension portion of the electrode -4-200931684, and a plurality of plural ranges are formed, and the diffusion of the current in the range is formed to achieve luminescence uniformity. Improved structure. For example, the light-emitting element pole pad portion 201 shown in the plan view of Fig. 15 is disposed on the rectangular electrode forming surface, the electrode extending portion extending from the electrode pad portion 201, and the electrode forming surface. The peripheral electrode 201b φ is formed on the four sides of the periphery, and the plurality of electrode extensions 201a which are formed by the corner portions of the electrode pad portion 201 which are perpendicularly intersecting each other are formed so as to be surrounded by the electrodes 201b and divided into plural numbers 15 In the middle, the L-shaped shape in which the plural numbers are slightly similar is enlarged as being separated from the electrode pad portion 201, but is equally spaced at each interval. With this configuration, the significant difference in current density at the electrode forming surface is reduced, i.e., current spreading is promoted and the current density in the surface becomes more uniform. [Patent Document 1] Japanese Patent Laid-Open Publication No. 2000- 1 64930, and the present invention. [Invention of the Invention] However, the inventors of the present invention have newly discovered the current concentration in the electrode extension portion, and as a result, have been caused by the portion. The uneven current is caused by excessive heat generation and heat storage in the element, and the carrier injection efficiency of the element is lowered, and the quantum efficiency is promoted. 200, electric corner. More 20 1 a is around. Plus by the two sides, equal to the right angle, 203. In the figure, the range of the wide range of the range of the electrodes is to be formed into a bending range, both of which are. Current and drop due to the pair. Further, in the conventional -5-200931684 outer edge surrounding electrode structure, it was found that the output was lowered. In addition, the above-mentioned problem is further induced for driving at a large current which is increased by the input power for high output. In addition, in the case of insufficient heat release, the change in the alloy composition in the external connection range is caused by the rise in the ambient temperature in the element, and as a result, the increase in the induced resistance, the light-emitting intensity, and the deterioration of the element itself are caused. Hey. The present invention is constructed to eliminate problems as in the past. The main object of the present invention is to provide a light-emitting element which has a high local heat density and a structure which is excellent in heat dissipation, and which has high-efficiency light emission, long life, and high reliability even when used in a large current region. Light-emitting device. [Means for Solving the Problem] In order to achieve the above object, the first light-emitting element of the present invention belongs to a semiconductor including the first conductive type layer 11 and the second conductive type layer 12 in which the light-emitting layer 13 is sandwiched. The structure 10 and the light-emitting elements of the first electrode 21 and the second electrode 21 which are electrically connected to each other and the first conductive type layer 11 and the second conductive type layer 12 are characterized by the first electrode 21 The electrode forming surface 15 formed on the first conductivity type layer 11 on the light extraction side, and the electrode extension portion 30 facing each other in the opposite direction are opposed to each other in the pair of electrode extension portions 30 In the direction, the distance W2 between the electrode extending portions 30 is shorter than the distance L2 from the electrode extending portion 30 to the end edge of the electrode forming surface 15. Further, the second light-emitting device of the present invention belongs to the semiconductor structure 10' having the first conductive type layer 11 and the second conductive type layer 12 laminated with the light-emitting layer 13 sandwiching -6 - 200931684, and the first conductive layer. The first layer 21 and the second electrode 21 are electrically connected to each other, and the first electrode 21 and the second electrode 21 are electrically connected to each other, and the first electrode 21 is formed at a position on the light extraction side. The electrode forming surface 15' on the first conductive type layer U, the electrode extending portion 30 facing each other, and the electrode forming surface 15 are provided in a slightly central portion of the electrode forming surface 15, via the electrode extending portion 30. The first range 31 held by the clamp 0 is located in the second range 32 between the outer periphery of the first range 31 and the end edge of the electrode forming surface 15, and is directed in the opposing direction of the pair of electrode extending portions 30. The center of the width from the center of the first range 31 to the edge of the electrode forming surface 15 is in the second range 32. Further, the third light-emitting device of the present invention is characterized in that the distance L2 from the electrode extending portion 30 to the edge of the electrode forming surface 15 in the opposing direction of the pair of electrode extending portions 30 is for a pair The distance 11 of 1/2 of the electrode extension portion 30 is 1.2 times or more and 1.5 times or less. Further, in the fourth aspect of the invention, the light-emitting element of the present invention is characterized in that the electrode extending portion 30 is arranged in a point symmetrical manner with respect to the center of the electrode forming surface 15 as a reference from the plane of the light extraction side. Further, the light-emitting element of the fifth aspect of the present invention is characterized in that the electrode extending portion 30 is linear in view from the plane on the light extraction side. Further, in the sixth aspect of the invention, the light-emitting element of the present invention is characterized in that the third region 31 sandwiched by the electrode extension portion 30 is opened in the direction in which the electrode extension portion 3 is extended. Further, a light-emitting device according to a seventh aspect of the present invention is characterized in that the electrode extension portion 30 of a pair of 200931684 is overlapped with a portion of the electrode extension portion 30, each having an external electrode and a connection external connection range 16, a pair The external connection range 16 is offset from each other in the longitudinal direction and/or the short direction of the electrode forming surface 15. Further, in the eighth aspect of the present invention, the first electrode 2 1 and the second electrode 2 1 are mutually offset from the first electrode 2 in a plan view from the light extraction side. The electrode extension portion 30 of 1 forms the second electrode 21 at a second range 32 between the end edge and the edge of the ytterbium electrode forming surface 15. Further, the ninth aspect of the present invention is characterized in that the second range 32 surrounding the first range has a second left-right range disposed at both end portions in the extending direction of the electrode extending portion 30, and is disposed in the second light-emitting region. The second upper and lower ranges of the both ends of the electrode extending portion 30 in the opposing direction, and the width L3 of each of the second and right ranges are 0.2 or more and 0.8 or less of the width L4 of each of the second upper and lower ranges. Further, a light-emitting device according to a tenth aspect of the present invention includes: a base 14 having a first electrode pattern and a second electrode pattern; and a substrate 14 disposed on the base 14 and electrically connected to the first electrode pattern and the first electrode pattern A light-emitting device of one of the two electrode patterns or the plurality of light-emitting elements 1 is characterized in that the light-emitting element 1 is a light-emitting element according to any one of claims 1 to 9 and is provided by the element covering member 26 Covered. Further, the illuminating device according to a eleventh aspect of the present invention is characterized in that the element covering member 26 includes a wavelength converting member 9 that absorbs at least a part of the light emitted from the light-emitting element 1 and performs wavelength conversion, and/or a reflection from the -8- 200931684 Light diffusing member of the light element 1 that emits light. [Effects of the Invention] According to the light-emitting device of the present invention, the electrode extending portion of the first electrode can be enlarged by the electrode extending portion 30 of the first electrode. Outer range. The heat is radiated in the vicinity of the electrode in the element, or the heat is generated in the vicinity of the electrode in the extension of the electrode. That is, since the heat release range can be expanded and the heat storage in the element can be reduced, it can be used as a light-emitting element excellent in heat dissipation. Further, according to the light-emitting device of the present invention, it is possible to provide a light-emitting device which is superior in heat dissipation property and has high reliability even under high current driving. Further, in the element covering member, the effect of adding the wavelength converting member or the light diffusing member to the reflected or scattered light is such that the wavelength of the emitted light from the light source can be converted to obtain a specific color gamut. A light-emitting device that is higher. Further, if a light source having a specific wavelength is selectively mounted, a light-emitting device capable of efficiently emitting a desired luminescent color can be realized, and the wavelength region of the emitted light can be increased. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the embodiments shown below are illustrative of a light-emitting element that embodies the technical idea of the present invention, and a light-emitting device using the same, and the present invention does not specify a light-emitting element and a light-emitting device using the same. The following composition. -9- 200931684 ADDITIONAL STATEMENT This specification is intended to provide an easy understanding of the scope of the patent application, and the number corresponding to the components shown in the embodiment is attached to the "Scope of Application for Patent" and the "Remedy for Resolving the Problem" column. The components. However, the constitution shown in the scope of the patent application is not intended to be a component of the embodiment. In particular, the dimensions, materials, shapes, and phases of the constituent members described in the examples are not specifically described, but the scope of the present invention is limited to the above, and is merely illustrative. example. 0 However, the dimensions or positional relationships of the components shown in the drawings are intended to be illustrative and exaggerated. More specifically, in the following description, the same name or symbol indicates the same or homogeneous member, and the detailed description is omitted. Incidentally, the constituent elements of the present invention may be formed as a plurality of elements by the same members, and a single member may be used in combination with a plurality of elements, and conversely, a function of one member may be shared by a plurality of members. In addition, in the present specification, "upper" on a layer or the like means not necessarily limited to the case where it is formed in contact with the above, but also includes a case where the upper side is formed as a separation, and also includes a layer interposed between the layers. In the case of 'use. [Embodiment 1] A plan view shown in Fig. 1 relates to an example of a light-emitting element 1 according to an embodiment of the present invention. Further, a cross-sectional view taken along line 11-11 of Fig. 1 is shown in Fig. 2, which is a cross-sectional view taken along line ΙΠ-ΙΙΓ of Fig. 1, and is shown in Fig. 3. The light-emitting element 1 shown in FIG. 2 or FIG. 3 is mainly composed of a cleaning table 3, and a semiconductor structure 1 位置 positioned above the support table 3, and an electrode sandwiching the semiconductor structure 10-200931684 20 components. Further, the support table 3 is fixed by lamination in the order of the support substrate 4 and the adhesive layer 5. On the other hand, the semiconductor structure 10 has a light-emitting layer 13 and an n-type semiconductor layer sandwiching the first conductive type layer 11 in which the light-emitting layer 13 is laminated, and a p-type semiconductor layer of the second conductive type layer 12. In the illustrated example, the p-type semiconductor layer 12 and the light-emitting layer 13'n-type semiconductor layer 11 are sequentially laminated to form a semiconductor structure. 1 〇' is located at the upper side of the semiconductor structure 1 的 the n-type semiconductor layer 1 1 The side 0 is the side of the main light-emitting surface from the light emitted from the light-emitting layer 13, that is, the light-removing side. (Electrode) The electrode 20 is provided with a first electrode 21 and a second electrode 22 for supplying electric power to each of the n-type semiconductor layer 11 and the p-type semiconductor layer 12'. Specifically, the n-type electrode of the first electrode 21 is formed on the n-type semiconductor layer 11, and electric power can be supplied. Similarly, a second electrode 22 is formed on a part of the main surface of the p-type semiconductor layer 12. Fig. 1 is a plan view of the light-emitting element 1 shown in a plane from the light extraction side, mainly showing the formation of the n-type electrode 21 on the n-type semiconductor layer 11. As shown in FIG. 1, the n-type electrode 21 is formed in a substantially central region of the square-shaped electrode forming surface 15, and is constituted by a pair of linear electrode extending portions 30 which do not have an edge shape along the electrode forming surface 15. The surrounding electrode structure surrounds the circumference. However, the shape of the electrode forming surface 15 is not limited to a square shape, but may be a positive polygon, a parallelogram, a rectangular shape, a polygonal shape, a circular shape or the like, depending on the exposed range of the n-type semiconductor layer 11 - 11 -

200931684 The shape is adjusted. Further, the electrode extension portion 30 shown in Fig. 1 is an electrode-shaped y-yang region, and the center C is used as a reference, and the point-to-point pair is arranged to be separated. Further, the shape of the portion 30 is formed in a thin shape without being branched as a line in view of the plane from the light extraction side. Further, the electrode extension portions 30 which are one of the opposing pairs are mutually intersected, and in the example of Fig. 1, the linear electrode extension portions 30 are extended, and the distance between the separations is substantially equal intervals. By arranging the power supply range from the outside as described above, it is possible to efficiently diffuse the entire current of the electrode forming surface 15. Further, since the projections 30 are mutually separated and there is no crossover or divergence, the concentration of the current is suppressed, and the current density is increased. Further, the electrode formation 15 has a light-emitting range 29 divided into the first range. Specifically, as shown in FIG. 1, as shown by the male auxiliary line, the range of the electrode extension window which is one of the opposite pairs is used as the first range 31, and more specifically, it is the fourth surrounding range of the fourth That is, the range is 32 between the first range 315 . and the end edges constituting the four sides of the electrode forming surface 15 . In other words, the formation position 7 of the electrode extension portion 30 is the boundary between the first range 31 and the second range 32, and further the distribution amount of the fang. Hereinafter, the optimum β of the electrode extension portion 30 will be described. The electrode extension portion 30 is directed to the protrusion portion 15 of the pair of electrode extension portions: a line extending from each other is not parallel to the phase, and the line structure of the electrode extension is symmetrically realized by the symmetry. The range of the dotted line 30 is 1 and the range of 3 1 is the outer circumference. The second direction is the direction of the opposite direction forming range 30, and the direction from the center C to the end edge of the electrode forming surface 15 is the middle point. The position is placed in the second range. In other words, the center of the width from the center of the first range 31 to the edge of the electrode forming surface 15 in the opposing direction of the electrode extending portion 30 is in the second range 32. At this time, the n-type electrode 21 of the light-emitting element 1 is in the opposing direction of the electrode extending portion 30, and the distance 1/2 of the distance L1 of the electrode-extending portion 30 is from the electrode extending portion 30 to the electrode forming surface. The distance L2 from the end of 15 is small. Therefore, the current injection and diffusion described later can be raised, and the heat release function can be improved. Further, in the element in which the center line of the width is formed into line symmetry, the width Η1 of the first range 31 is smaller than the total Η2 of the width of the second range which is above and below the first range, that is, the electrode extension portion 30 is configured by the center. More specifically, the distance L2 from the electrode extending portion 30 to the edge of the electrode forming surface 15 in the opposing direction of the pair of electrode extending portions 30 is 1/2 between the pair of electrode extending portions 30. The distance of 1 is preferably 1.2 times or more and 1.5 times or less. In this range, the excessive temperature rise of the first range which is close to the pair of the electrode extension portions is prevented, and the heat dissipation property of the element can be improved. As a result, even in a large current region, it is possible to obtain a high-efficiency light-emitting, long-life, and highly reliable component. Further, in the light-emitting element 1 of Fig. 1, the second range 32 is formed by surrounding the four sides of the first range. The second range 32 is provided in the left-right direction of FIG. 1 and has a second left-right range 33' disposed at both end ranges and two ends disposed in the opposing direction of the electrode extending portion 30 (upper and lower directions in FIG. 1). The second range of the range is 34. The width L3 of the second left and right range 33 is substantially coincident with the end edge of the electrode forming surface 15 from the end of the electrode extending portion 30 from the end -13 to 200931684 of the electrode extending portion 30, in other words, the second The width L3 of the left and right ranges 33 depends on the extension 鸾 of the electrode extension 3〇. It is preferable that the width L3 of each of the second and right ranges of the electrode extension portion 30 is 0.2 or more and 0.8 or less of the width L4 of each of the second vertical ranges. For this range, the arrangement ratio of the electrode extension portion 30 in the electrode forming surface 15 can be increased as the intersection portion having no n-type electrode 21. Thereby, the local concentration of the current is avoided, and the diffusion of the current surface Q is promoted, and the decrease in the light-emitting range can be suppressed, or the light-emitting range can be increased to obtain a high output. Further, in order to satisfy the above-described range of electrode arrangements, the heat generated in the first range 31 can be two-dimensionally transmitted to the second range which is not in the square, as shown in the plan view of the electrode forming surface 15 The exothermic effect of efficiency. Further, the end edge of the electrode extending portion 30 is located at the boundary between the first range 31 and the second right and left range 33, and can be configured to be separated from the end edge of the electrode forming surface 15. That is, the first range 31 existing between the electrode extension portions 30 which are the opposite pairs is the opening direction of the electrode extension portion 30 as an opening. Therefore, one part of the electrode is separated from each other, and it is preferable that the cross portion is not provided, and the bent portion is more preferably used as an alien, and the current in the connection portion, the cross portion, and the curved portion can be controlled, and the heat can be appropriately concentrated. Ground boosting the current injection of the first and second ranges, and the heat release function. According to the above configuration, excessive temperature rise and heat storage in the first range 31 which is excessively close to the electrode extending portion 30 can be suppressed, and the second range 32, or the electrode extension portion 3, can be suppressed even if it is adjacent to the wide heat release range. In the vicinity of the opening portion, the heat generation in the vicinity of the electrode extension portion 30 and the first range 31 in the period of -14 to 200931684 can be efficiently radiated. As a result, it can be used as a light-emitting element which is also highly reliable in driving under a large current. In addition, the degree of extension of the electrode extension portion 30 is not limited to the above range, and as shown in FIG. 4, the electrode extension portion 3 0 ' may be equivalent to one side of the semiconductor structure 1 ,, that is, one side of the electrode formation surface 15 Set the length - set. By the electrode arrangement in which the electrode reaches the end edge, the first element circumference 31 sandwiched by the pair of electrode extensions 30 in the light-emitting element 60 is the end edge in the longitudinal direction. The end edges of the electrode forming faces 15 are slightly the same. That is, the width of the first range 31 in the longitudinal direction substantially corresponds to one side of the electrode forming surface 15. As a result, the arrangement ratio of the electrode extension portion 30' to the electrode forming surface 15 can be increased without having a cross portion, and current unevenness can be suppressed, and current injection can be performed, and luminous efficiency can be improved. Further, the heat generation in the first range 31 is transmitted to the second range 32 in which the first range 31 夹持 is sandwiched in a direction perpendicular to the direction in which the electrode extension portion 30' extends, and has a wide heat dissipation range. The second range is exothermic, and the heat storage of the entire element can be controlled. Further, the first range 31 is similar to the light-emitting element 1 of Fig. 1, and has an opening portion in the direction in which the electrode extending portion 30' extends, thereby further enhancing the heat radiation effect. However, the light-emitting element 60 of Fig. 4 is different from the light-emitting element 1 of Fig. 1, and the structure of the electrode extension portion is different, and the other structures are substantially the same, and the same reference numerals will be given, and detailed description will be omitted. As described above, the structure having the width center may have a structure as a part, and is preferably a structure in which it is developed. For example, in the example of the above-mentioned FIG. 4-15-200931684, the bisector of the area passing through the center C On both sides, there is a constructor of this. Others may be constructed as a structure in which the center C is rotated, and for example, a structure of four rotation symmetry as shown in Fig. 11 is used. As described above, the structure in which the width center is partially developed can provide the function of the present invention, and the function can be improved by increasing the ratio of the structure to the entire component. The width: the center of the structure is specifically 1/4 or more, more preferably more than 1/3, and most preferably more than 1/2. Further, in the example of Fig. 1, the structure of Fig. 4 is developed in the same manner as Q, but the structure in the direction in which the electrode extends does not have the center of the width described above. However, the example of Fig. 1 having a structure close to this is advantageous for the functional property. . Thus, in the structure of the width center of the above-mentioned part, it is preferable that the structure of the range of the remaining portion is close to the width center. Here, a rectangular element is described as an example. However, various shapes such as a slightly polygonal shape such as a slightly hexagonal shape, a slightly circular shape, and a slightly elliptical shape can be similarly applied. 〇 (Positioning arrangement) Further, the n-type electrode 21 and the p-type electrode 22 are disposed in a direction in which the semiconductor structure 10 is stacked and perpendicular to the direction of the lamination. Specifically, in the misalignment arrangement, the opposing faces of the respective electrodes are exposed as electrodes from the opposing faces. The present invention is not limited thereto, and the first and second electrodes may overlap each other in plan view, but they are adjacent to each other, and it is preferable to use them as a separator. Thereby, the current diffusion can be promoted to increase the internal quantum efficiency. In addition, while the current uniformity of the electrode forming surface is improved, it can be used as a light-reducing emission-16-200931684 light. Specifically, as shown in FIGS. 2 and 3, the n-type electrode 21 and the p-type electrode 22 formed by sandwiching the light-emitting layer 13 are inconsistent with each other in a plane from the light extraction side. Configured with the center axis. That is, the Ρ-type electrode 22 is formed in the second range 3 2 shown in Fig. 1, and the protective film 7 is laminated and insulated from the range of the adjacent p-type electrode 2 2 . Further, the electrode extending portion 30 is provided with an electrode pad portion each having a portion 16 which is connectable to the outer portion 10, and in other words, the electrode extending portion 30 is disposed to extend from the electrode pad portion 16. In the case of Fig. 1, an electrode pad portion 16 is provided at one end of the linear electrode extending portion 30. Further, the pair of electrode pad portions 16 are disposed offset in the longitudinal direction and/or the short direction of the electrode forming surface 15 , and the electrode forming surface is formed in the electrode pad portion 16 of FIG. 1 . The center C' of 15 is formed at a slightly symmetrical position as a reference. In other words, the rectangular four sides constituting the electrode forming surface 15 are formed obliquely to each other with the parallel two directions as a reference. Further, the electrode pad portion 16 is connected to a conductive member such as a bonding wire. The junction is supplied with a current from the external power source to the device by the conductive portion. Accordingly, the current density is large in the vicinity of the electrode pad portion 16 as a center. On the other hand, the formation range of the electrode extension portion 30 including the electrode pad portion 16 itself is due to the coating of the light-emitting range 29, and the amount of light taken at the right side of the electrode extension portion 30 is lowered. In other words, the current concentration range and the light interruption range in which the electrode pad portion 16 is displaced are prevented from being biased in the electrode forming surface 15 to increase the current density -17-200931684 Uniformity, and can release a light-emitting element with high directivity and outgoing light. Further, in the example of FIG. 1, an electrode pad portion 16 is provided in each electrode extending portion 30, but a plurality of patterns may be provided on one electrode extending portion 30 or on the electrode forming surface 15, for example, The function is similar to that of the electrode extension portion, and the electrode forming surface 15 may be arranged in a straight line, and may be arranged two-dimensionally in a Z-shape or the like. Further, the semiconductor structure 10 having the light-emitting layer 13 may be any semiconductor structure fabricated by a known method and structure in the field of the zero. Figs. 5 to 9 are schematic cross-sectional views showing a light-emitting element 1 of a semiconductor structure 10, and an explanatory view showing an example of a method of manufacturing the same. Hereinafter, a method of manufacturing a nitride semiconductor element according to an example of the light-emitting element 1 of the embodiment will be described with reference to Figs. 5 to 9, and a detailed description of each member will be given. (Semiconductor Layer) First, as shown in Fig. 5, a semiconductor structure 10 having a second 导电 conductivity type layer 12, a light-emitting layer 13, and a first conductivity type layer 11 is formed on the growth substrate 6. The growth substrate 6 is preferably a substrate in which the nitride semiconductor of the semiconductor structure 10 can be epitaxially grown, and the size or thickness of the growth substrate is not particularly limited. Examples of the growth substrate include an insulating substrate of sapphire or spinel (MgAl 2 〇 4 ) having a C surface, an R surface, and an A surface as a main surface, or tantalum carbide (6H, 4H, 3C).矽, ZnS, ZnO, Si, GaAs. Further, a nitride semiconductor substrate such as GaN or AIN can also be used. -18- 200931684 The semiconductor structure of the present invention is not limited to the above, and various light-emitting structures such as Pn junction, P-i-η structure, and MIS structure may be employed. In the following, a nitride semiconductor will be described as a flat conductor structure and a semiconductor layer. However, the present invention is not limited thereto, and other materials such as GaAs-based or InP-based, such as InGaAs and GaP semiconductor, and luminescent luminescent molecules are used. Also applicable. On the growth substrate 6, 'as a semiconductor structure, the n-type nitride semi-Q conductor layer 11' light-emitting layer 13 and the p-type nitride semiconductor layer 12 are laminated in this order. At this time, the material of the growth substrate 6 may be a low-temperature growth buffer layer between the semiconductor structure and the semiconductor structure, for example, AlxGai.xN ( 0 ^ X ^ 1 ) of 1 to 3 nm, and other layers which are grown at a high temperature. For example, a base layer of AlxGa^xNCOSxSl) of 0.5 to 4/zm. For the n-type, p-type nitride semiconductor layer, for example, a composition represented by a composition formula of AlxGayIni.x_yN (0 SX $1, OSygl, χ+ySl) may be used, and in addition, III, IV may be used. One of the elements is replaced by B's, Sb, etc. as B. For example, for the n-type layer 1 1 system, a contact layer of GaN, a multilayer film structure of InGaN/GaN, for

• The P-type layer 12 can be formed by using a contact layer of GaN, a layer of AlGaN, InGaN, GaN, or a multilayer film structure. Thus, a single layer or a multilayer structure of various compositions, doped doses can be used as a layer having one, plural, and each function (contact 'coating). Each of the conductivity type semiconductor layers is a layer which is suitably doped and then serves as a desired conductivity type. For example, in a p-type or n-type nitride semiconductor, Mg, Si or the like is used. It can also be used in one of the conductive layers to have an insulating, semi-insulating range, layer, or reverse conductivity -19 * 200931684 Electrical range, layer. Further, the light-emitting layer 13 used in the present invention, that is, the active layer has a well layer composed of, for example, AUInbGahajN (OSaS1, OSbS1, a+bS1), and AlcIndGa丨-c-dN (0ScSl, The quantum well structure of the barrier layer formed by 0$dSl, c + d$n. The nitrogen used in the active layer, the semiconductor system can also be undoped, n-type impurity doped, p-type impure; Any one of the GaN-based band gaps may be used as a high-output device by undoped or nitrided semiconductors doped with n-type impurities. By including Α1 in the well layer, a band gap larger than GaN can be obtained. The wavelength of the energy is 3 65 nm, and the wavelength of the light emitted from the active layer corresponds to the purpose of the light-emitting element, and is used as a wavelength of 360 nm to 650 nm, and preferably as a wavelength of 380 nm to 560 nm. The composition of InGaN is best used for visible light and near-ultraviolet light. The composition of the barrier layer at this time is preferably GaN or InGaN. The film thickness of the well layer is preferably 1 nm or more and 30 nm or less, which can be used as one. The weight of a plurality of well layers, such as a single quantum well of a well layer, a barrier layer, etc. (Second Electrode) Next, as shown in FIG. 5, a second electrode 22 made of Rh, Ag, Ni, Au, Ti, Al, Pt or the like is formed on the surface of the second conductivity type layer 12. The second electrode 22 has a reflection structure because it is a light reflection side, and specifically has a reflection layer having a high reflectance, and particularly preferably has a side on the side where the second conductivity type layer is in contact with each other. The adhesion of the film -20-200931684 layer can be used as a multilayer structure in which, for example, a dense layer/reflective layer is laminated in this order. As the specific second electrode 22, the semiconductor structure 10 can be used as Ag / Ni / Ti / Further, the second electrode 22 is preferably formed in a slightly wider range than the nitride semiconductor layer in the range in which the first electrode 21 is formed, and it is preferable to increase the light-emitting range of current injection. 'In the plan view, the first and second electrodes have the effect of sandwiching the active layer 13; the overlapping range is preferably caused by the loss of light absorbed into the electrode. ❹ (Protective film) To protect the nitride semiconductor A protective film 7 may be provided on the peripheral portion of the element or the like. The second conductive electrode layer 12 is formed in a range exposed from the second electrode 22, and is provided adjacent to or apart from each other in the illustrated example. However, the present invention is not limited thereto, and the second electrode may be coated. The protective film 7 is provided as an insulating film, and the second electric G electrode selectively provided on the surface of the second conductive semiconductor layer is electrically connected to the semiconductor layer. As an insulating protective film, As a specific material, an oxide film of SiO 2 , Nb 205, Al 2 〇 3, ZrO 2 , TiO 2 or the like, or a single layer film or a multilayer film of a nitride film of AIN or SiN can be used. • Adding a ground, it is also possible to coat the protective film 7 with a high-reflectivity metal film such as Al, Ag or Rh. Further, as for Si02/Ti/Pt, a part of the multilayer structure of the second electrode may be provided on the side of the adhesive layer 5a of the insulating film. (Semiconductor Layer Side Adhesive Layer) Next, on the second electrode 22, a semiconductor layer side adhesive layer 5a which is gold-plated at the time of bonding is formed. The semiconductor layer side adhesive layer 5a is formed of an alloy containing at least one selected from the group consisting of Au, Sn, Pd, and In. The semiconductor layer side adhesive layer 5a is preferably a three layer structure in which the adhesion layer 'barrier layer and the eutectic layer are formed. The adhesion layer contains at least one selected from the group consisting of Ni, Ti, RhO, W, and Mo. The barrier layer contains at least one selected from the group consisting of Pt, Ti, Pd, TiN, W, Mo, WN, and Au. The eutectic layer contains at least one selected from the group consisting of Au, Sn, Pd, and In. Further, the film thickness of the semiconductor layer side adhesion layer 41a is 5/zm or less. For example, Ti/Pt/Au/Sn/Au can be used, and in the case where a part of the multilayer structure of the second electrode is provided as the protective film, the adhesion layer can be omitted as Pt/ Au/Sn/ Au. (Support substrate) On the other hand, the support substrate 4 is prepared. The support substrate 4 is mainly a conductive substrate such as a semiconductor substrate of GaAs, a metal material of Cu, Ge, Ni, or a composite material of Cu-W, in addition to the Si substrate. In addition, a composite of a metal such as Cu-Mo, AlSiC, AIN, SiC, Cu-diamond, or the like can be used. For example, the general formula of Cu-W and Cu-Mo can be expressed as CuxWioo-x ( 〇 ^ X ^ 30 ) and CuxMo100-x (OSxg 50). In addition, the advantage of using Si is that it is inexpensive and easy to waferize. The ideal film thickness of the substrate 4 is 50 to 500 #m. When the film thickness of the rubbing substrate 4 is set to the range, the heat dissipation property is improved. On the other hand, for the support substrate, if a conductive substrate is used, it is an element superior to high electrostatic withstand voltage and heat release -22-200931684, except that power supply from the substrate side becomes possible. Further, in general, as a material having opacity such as Si or Cu (Cu-W), a reflective structure is provided between the semiconductor layer and the semiconductor layer, for example, an electrode or a semiconductor layer, and for heat dissipation, Excellent luminescent properties are preferred. Further, a plating member may be formed on the nitride semiconductor layer by electroplating to form a support substrate and adhesion to the support substrate 4. In addition, it may be an element that is not provided with a supporting substrate, and may be directly mounted on a mounting portion of the light-emitting device, a base, or a metal member to be placed on the semiconductor layer via a plating plate. state. Alternatively, the opposite side of the semiconductor side opposite to the light extraction side, for example, the upper surface or the lower surface of the support substrate 4, or the surface of the above nitride semiconductor layer (here, the surface of the second conductive type semiconductor layer 12) may be used. A multilayer film in which materials having different refractive indices such as a distributed Bragg reflector (DBR) are periodically alternately formed. The multi-layer thin film is composed of, for example, a dielectric multilayer film or a GaN/AlGaN semiconductor, and a surface of the semiconductor layer, for example, a protective film or the like, may be formed separately or in combination with an electrode for reflection, and a reflection structure may be provided. * (bonding work). As shown in Fig. 6, the surface of the semiconductor layer side adhesive layer 5a is opposed to the surface of the support substrate side adhesive layer 5b, and the support substrate 4 is bonded to the nitride by heat sealing. The second electrode 22 on the semiconductor layer side. The heating and pressing is performed while pressing, and heat of 150 ° C or more is added. Thereby, as shown in Fig. 7, the semiconductor layer side and the support substrate side are bonded by the adhesive layer 5 (5a and 5b). -23- 200931684 It is preferable that the surface of the support substrate 4 is also formed to support the substrate-side adhesive layer 5b. Further, the support substrate side adhesive layer 5b is preferably a three-layer structure in which an adhesion layer, a barrier layer, and a eutectic layer are formed. The support substrate side adhesive layer 5b is derived from, for example, Ti—Pt—Au, Ti—Pt—Sn, Ti—Pt — Pd or Ti — Pt — AuSn , W — Pt — Sn , RhO — Pt — Sn , RhO — ' Pt — Au ' RhO — Pt - (Au, Sn) and other metal films are formed. It is preferable to provide an adhesion layer, a barrier layer, and a eutectic layer on the bonding surface of the support substrate side and the nitride half-conductor layer side as a eutectic bonding. Materials such as materials (substrates, semiconductors) form the materials of their layers. After bonding, it becomes the second electrode/Ti-Pt — AuSn—Pt—Ti/support substrate, and the other is the second electrode/RhO — 卩1—eight 11811-?1—1^/support substrate, and the second The electrode / 1 ^ one? 1 - PdSn - Pt - Ti / support substrate, or 2nd electrode / Ti - Pt - AuSn - Pt - RhO / support substrate, or 2nd electrode / Ti - Pt - Au - AuSn - Pt - TiSi2 / support substrate, or Ti/Pt/AuSn/PdSn/Pt/〇TiSi2/ support substrate, or Pt/ AuSn/PdSn/Pt/TiSi2/ support substrate (when the protective film is Si〇2/Ti/Pt). In this way, when the surface of the support substrate is different from the side of the nitride semiconductor element, it is preferable to use a low temperature as a eutectic, and it is preferable that the melting point after eutectic rises. (Growth substrate removal process) After that, as shown in Fig. 7, the growth substrate (broken line portion) is removed, and the semiconductor structure 1 is exposed. The growth substrate 6 is removed from the growth substrate side by irradiation with a pseudo-molecular laser, and is removed by Laser Lift Off (LLO) or -24-200931684. After the growth of the substrate 6 is removed, the surface of the exposed nitride semiconductor is subjected to CMP (Chemical Mechanical Honing) treatment to expose the first conductive type layer 11 of the desired film. In this case, when the base layer having a high absorptivity of the light of the light-emitting element is removed from the GaN layer which is grown at a high temperature, for example, even in the case of an LED having an emission wavelength in the ultraviolet range, the influence of absorption can be reduced. By. Through the treatment, the damage layer or the thickness of the nitride semiconductor layer can be removed, and the surface roughness of the surface can be adjusted. (Section of Nitride Semiconductor Layer) Further, as shown in Fig. 8, the conductor structure 10 is divided into wafers. Specifically, in order to wafer the nitride semiconductor device, peripheral etching is performed by RIE or the like, and the nitride semiconductor layer on the outer periphery is removed and separated, whereby the protective film 7 is exposed. Further, in order to improve the light extraction efficiency, it is possible to have a concave-convex structure on the light extraction surface such as the surface of the semiconductor layer. For example, the exposed surface of the first conductivity type nitride semiconductor layer may be wet-etched to form a concavo-convex structure by RIE or the like. Further, it may be provided on a light-transmitting member covering the semiconductor layer, for example, a protective film (not shown) on the surface of the first conductive type layer, or the like, or may be expanded to have a concavo-convex structure between the materials. Interface, set the bump structure. Further, a concave-convex structure may be provided on the light-reflecting surface such as the second electrode side. Here, the surface of the semiconductor layer in the range in which the first electrode is exposed is wet-etched with KOH, and a roughened structure is provided as a roughening. -25- 200931684 (1st electrode) The effect of the surface and the surrounding effect A1 1 White X is the electrode which is formed on the exposed surface of the first conductive type layer 11 and is formed to satisfy the above-described configuration. The first electrode 21. In other words, the first electrode 21 is disposed on the surface of the electrode forming surface 15 and is disposed so as to overlap with the formation range of the second electrode 22 having no position at which the active layer 13 is sandwiched. With this configuration, in the layer of the semiconductor structure 10, the direction of the carrier is three-dimensionally moved, and the center axis is made to be different between the two electrodes 21'22, thereby promoting the in-plane diffusion, and the internal quantum ratio is raised. Specifically, the stacking order, such as Ti—Au, Ti—and the Ti layer (the first layer) for the resistance and the adhesion of the first conductivity type layer and the liner layer for the spacer (the 2 layers), using gold, A1, gold composition, and the first layer for resistance (for example, W 'Mo Ti is preferable for resistance contact with the first conductivity type layer), and padding Between the two layers, as a barrier layer, a structure of a high-melting-point metal layer (W, Mo ❹ platinum group) is provided, for example, w-Pt- Au, Ti_R-Pt Au is used. As the reflective electrode of the n-type nitride semiconductor, those using A1, • alloy, as the translucent electrode, of course, may be made of ITO or the like. In the case of the implementation type, in the case where the first electrode 2 1 constitutes an n-type pole, the stacking order Ti - Al - Ni - Au, W - Al - W Pt - Au ' Al - Pt - Au ' Ti - Pt is used. -Au, etc. In addition, the first electrode has a film thickness of o.l to 1.5/zm. (Wafer Dividing) -26- 200931684 Next, the support table 3 shown in the support substrate 4 and the adhesive layer 5 is cut by the cut position D at the boundary range of the nitride semiconductor element 1, and FIG. 1 is obtained. The wafer-formed nitride semiconductor device 1 shown in FIG. - (Translucent conductive layer), or a diffusion layer that promotes the diffusion of the current Q between the semiconductor layers of the respective electrodes. The diffusion layer is provided with a wide area and a large area, and has a diffusing function. When it is translucent, it does not emit light (on the second electrode side) and reflects (first electrode side). The lowering is preferable, and for example, a light-transmitting conductive layer can be used. The conductive layer can uniformly diffuse current to the semiconductor body through a slight overall formation of the exposed semiconductor layer. Specifically, it is desirable to form a light-transmitting conductive layer containing an oxide of Zn, In, or Sn such as ITO, ZnO, In2〇3, or Sn02, and it is preferable to use ITO. Alternatively, other metal ruthenium such as Ni may be used as a film, an oxide, a nitride, a compound of these, or a composite material. (Wiring structure) The nitride semiconductor element 1 shown in FIG. 1 to FIG. 4 having the above-described structure can be made of the conductive layer of the adhesive layer 5 and the conductive substrate of the support substrate 4 as SiC or the like. The main surface of one of the two electrodes 22 is in contact with the nitride semiconductor layer 12 of the second conductivity type, and is externally connected from the other main surface side of the second electrode 22. In other words, the main surface of one of the second electrodes 22-27 to 200931684 (on the upper side of FIG. 3) is the surface of the second electrode 22 which is in contact with the semiconductor. The other main surface (lower surface) of the second electrode 22 can be used for external connection. The function of the face. Further, the bonded support substrate 4 is electrically connected to the second electrode 22, and the back surface side of the surface facing the germanium semiconductor laminated structure side (on the bottom surface side of the nitride semiconductor device 1 of FIG. 3) can be made. - is the external connection range of the second electrode 22. For example, by being placed on the support, the electrodes of the substrate 4 are connected to an external circuit. In the case where the support susceptor 4 is used as an insulating material, the support substrate 4 formed on the side of the semiconductor laminate structure is connected even by a three-dimensional wiring via the support substrate 4 or a wiring electrode such as a via for wiring. The electrode and the electrode formed on the back side of the opposite side are also taken out as electrodes from the back side of the support substrate 4. In short, the second electrode 22 and the external electrode can be electrically connected without using the exposed wire. Further, in the support substrate 4, those who connect the individual heat radiation members can also obtain a heat release effect. On the other hand, the first electrode 21 of the electrode on the surface side of the semiconductor layer is connected to the conductive refraction by solder or the like in an exposed range for external electrode connection. Thereby, it can be connected as an electrical connection to an external electrode. Others have a wiring structure in the semiconductor layer, and may be, for example, a structure in which a wiring layer is provided from the semiconductor layer to the external supporting substrate. In this case, the wiring structure is externally connected via the above-mentioned supporting substrate. Etc., connect with the outside. In the case of a light-emitting element in which such a wire is not connected, the device is not required to have a wide pad portion, and the current concentration tends to be suppressed, and a phosphor layer to be described later can be appropriately formed and sealed. member. For example, as in the example of Fig. 4, in the configuration in which the electrode reaches the end of the layer of the semiconductor -28-200931684, on the support substrate extending outside thereof, the electrode can be extended. In addition, in the nitride semiconductor device 1 shown in FIG. 1 to FIG. 3, the support substrate 4 is made of a material having excellent electrical conductivity, whereby the upper and lower sides of the light-emitting layer can be sandwiched in a three-dimensional manner as an electrode. With the vertical electrode structure, current can be diffused into the entire P-type semiconductor layer (the second conductivity type nitrided, material semiconductor layer 12), and the in-plane diffusion of current becomes uniform. 0, the electrical impedance can be reduced and the carrier injection efficiency is improved. Further, the supporting substrate 4 can be completed as a function of the heat radiating plate, and deterioration of the characteristics of the element via the heat can be suppressed. (Light-emitting device) A schematic cross-sectional view of the light-emitting device 2 of Fig. 9 shows an example in which the nitride semiconductor device 1 shown in Fig. 1 to Fig. 3 is attached to the module 8. The module 8 is provided with a base 14 each having lead wires 14a, 14b corresponding to a pair of electrode patterns. The nitride semiconductor element 1 placed on the base 14 is formed on the mounting surface side of the support substrate 4, and the second electrode 22 for external connection is electrically conductively bonded to one of the leads 14a of the base 14. The components are electrically connected. Further, the first electrode 21 disposed on the first conductive type layer 11 side of the nitride semiconductor device 1 is connected to the external connection range 16 (see FIG. 1), and is connected to the conductive lead 18 via the other lead 14b. Electrical connection. Further, in the figure, the light-emitting element is placed on the bottom surface of the concave portion. However, the present invention is not limited to the shape of the mounting portion, and can be used as a flat shape, an upper surface of the convex portion, and the like. -29- 200931684 (Lens) Further, the assembly 8 is formed with a cup having a slightly concave shape on the side surface, and has a wide opening portion 24 on the upper side. Further, the upper portion of the opening portion 24 of the module 8 is closed by a lens 17 such as a spherical lens, an aspherical lens, a cylindrical transmissive mirror, or an elliptical lens. Further, in addition to the flat surface of the light extraction side of the mirror 17, the lens may be formed in a lens shape or a microlens shape having irregularities. A lens which diffuses or collects light emitted from a light source may be provided in accordance with the use, and may be formed by inorganic glass, resin or the like. Further, the inside of the opening 24 is filled with the element covering member 26 that covers the nitride semiconductor element 1. As the element covering member 26, a translucent enamel resin composition is used in addition to the gas, and a denatured oxime resin composition is preferred. Further, a translucent insulating resin composition having an epoxy resin composition, a denatured epoxy resin composition, an acrylic resin composition or the like can be used. Further, it is possible to use a resin excellent in weather resistance, such as a resin, an epoxy resin, a urea resin, a fluorocarbon resin, or a mixed resin containing at least one of these resins. Further, it is not limited to organic substances, and it is also possible to use an inorganic material such as glass or silicone which is excellent in light resistance. Further, for the hermetic seal, an inert gas, nitrogen, oxygen, argon, helium, or a combination of these or dry air may be used. In particular, in the case of using a gallium nitride-based semiconductor element as a light source, deterioration of a semiconductor element is prevented by using dry air or a gas containing at least oxygen. -30- 200931684 (Mounting element, protective element) In addition, in the light-emitting device of the present invention, only one of the nitrided element elements 1 may be placed, but two or more light-emitting elements may be placed in addition to the light-emitting elements. In addition, for example, a Zener diode or a capacitor protection element can be combined. Further, the 'protective element' may also be formed in one of the parts of the hair piece. These protective elements are available in the field and constitute the owner.波长 (wavelength conversion member) In the element covering member 26, a conversion member 9 such as a fluorescent substance that emits fluorescence, which is excited by the light emitted from the light-emitting layer 13, can be mixed. Thereby, the light of the light source can be converted into different wave lights, and the light source and the light of the wavelength converted by the wavelength conversion member 9 can be taken out to the outside. That is, the light φ having a wavelength different from the wavelength of the main light source is obtained as a wavelength conversion member 9 by one of the light from the light source, and the phosphor can be suitably used. Because the camp light also has the function of the light-scattering auroral reflectivity, and the wavelength is changed, it can achieve the function of the light-scattering part, and the above-mentioned light can be obtained. The fluorescent system may be mixed in a relatively uniform ratio in the component coating structure, or may be partially unevenly coupled. For example, heat generated in the semiconductor layer can be easily transmitted to the fluorescent material via the specific distance from the light-emitting layer 13 to deteriorate the fluorescent material. On the other hand, if the wavelength conversion member 9 is formed on the side of the semiconductor layer to form a slightly uniform wavelength conversion layer, it is known that the light elements passing through the semiconductor such as the semiconductor are excited by the mixed color having a long wavelength. The system is changed, and the effect of the wavelength of the emitted light of the luminescent layer is constant, and the illuminating color of the mixing ratio of the stabilized primary light and the converted light is obtained. In addition, the fluorescent system can also cover components in a component made of one layer? In the case of the luminescent layer formed of the stratified layer, there may be one type or two or more types. Thereby, a light-emitting device that can emit a desired wavelength can be realized. Examples of the representative phosphor include cadmium zinc sulfide added to copper or a YGA-based light-emitting body and a LAG-based phosphor added by ruthenium. Especially for high brightness and long time use, (Re^xSmKAlHGaYhOu : Ce ( 0 S X < 1, 0 S y $ 1, but Re is an element selected from at least one of Y, Gd, La, and Lu). As the wavelength conversion member of the second embodiment, a YAG or LAG phosphor is used, and for example, white can be obtained. Further, as the phosphor, a phosphor glass or a phosphor-containing resin containing a glass or a resin-mixed phosphor, a phosphor or a crystal body (plate) containing the same may be used. ❹ In addition, by using a nitride phosphor having yellow to red light emission and the like, a red component can be added, and an illumination with a high red evaluation number Ra or a lamp or a swatch LED can be realized. Specifically, by adjusting the amount of the phosphor of the light-emitting element of the light-emitting element and adjusting the amount of the chromaticity point on the chromaticity diagram of the CIE to be contained, the phosphor can be made between the phosphor and the light-emitting element. Any point on the connected chromaticity diagram. Other examples include a nitride phosphor that converts near-ultraviolet light to visible light into a yellow to red domain, an oxynitride phosphor, a phthalate phosphor, L2Si04: Eu (L-alkaline earth metal), and in particular ( SixMaei-x) 2Si〇4: Eu (Mae is a soil test metal such as Ca, Ba, etc.) -32- 200931684 et al. As a nitride phosphor, a oxynitride (oxynitride) fluorescent system has Sr_Ca-Si-N:Eu, Ca-Si-N:Eu, Sr_Si-N:Eu, Sr-Ca-Si-Ο-N : Eu, Ca — Si — 0— Eu, Sr — Si— O — N: Eu, etc., as an alkaline earth-based lanthanum nitride fluorescent system, from the general formula LS i 2 〇 2N 2 ·· Eu, general formula LxSiyN ( 2/3X+ 4/3y) : Eu or 'LxSiyOzN(2/3x + 4/ 3y-2/3z): Eu (L is any of Sr, Ca, Sr and Ca, one). Ο (Additional member) In addition to the wavelength conversion member 9, the element covering member 26 can be used in accordance with the annual extender, pigment, fluorescent material, and appropriate components for use. A light-emitting element that points to a characteristic. Similarly, as a filter having a color filter effect of cutting off unwanted wavelengths from external light or light-emitting elements, various coloring agents may be added. Here, in the present specification, the diffusing agent means, for example, that the central particle diameter Φ is 1 nm or more, and the light from the light-emitting element and the fluorescent material can be satisfactorily reflected and the fluorescent material having a large particle diameter can be controlled. The color. Unevenness or narrowing the width of the luminescence spectrum. On the other hand, in the case of lnm, the diffusing agent which does not reach l#m does not lower the luminosity and can increase the resin viscosity. (Mixed Agent) Further, the enamel covering member 26 may contain a smearing agent in addition to the glazing material. As a specific material, the same configuration as that of the diffusing agent-33-200931684 can be used, and the center particle diameter of the diffusing agent is different. For the present specification, the central particle diameter of the chelating agent is 5 Å or more and 1 00 /zm or less. It is better. When the enthalpy of such a particle size is contained in the element covering member 26, the chromaticity unevenness of the light-emitting device is improved by the light scattering effect, and the thermal shock resistance of the element covering member 26 can be improved. Therefore, it is possible to prevent the occurrence of breakage and peeling of the light-emitting element and the interface between the different members for use at a high temperature. Further, the fluidity of the resin can be adjusted to a long time. Example 1 Hereinafter, a configuration example of the electrode of Example 1 is shown. The same components as those described above are denoted by the same reference numerals, and detailed description thereof will be omitted. Fig. 10 is a plan view of the light extraction side of the light-emitting element 101, mainly shown on the n-type electrode 41. The light-emitting element 101 shown in Fig. 10 is a slightly square-shaped crystal grain having a mouth of 1 mm (electrode forming surface of 1 mm X 1 mm), and its peripheral shape is extended in one direction (in the left-right direction of Fig. 10). The first side 35, and the second side 36 that intersects perpendicularly thereto, and the opposite sides are formed on the two sides 35, 36 and are parallel to the two sides 35', 36'. Further, the n-type electrode 41 has a pair of electrode pad portions 16 formed in the electrode forming surface 15 of the exposed portion of the n-row semiconductor layer 11, and the electrode pad portions 16 each extend in a linear electrode extension portion. 40. Further, as shown in FIG. 10, the electrode forming surface 15 of the electrode formation range is formed on the inner side from the rectangular periphery of the light-emitting element 101 by a certain distance. In the first embodiment, the light-emitting element 10 1 The outer circumference is only between 3 0 - 34 and 200931684 μ m, that is, it has a narrowing range for the center direction. Further, the pair of electrode extending portions 40 are slightly parallel and opposed to each other as an detachment. In Fig. 1A, each of the electrode extending portions 40 is formed in a direction in which it extends in parallel with the first side 35, and is arranged in a point symmetrical manner with reference to the center of the electrode forming surface 15. Further, the electrode forming surface 15 is a first range 31 sandwiched by the pair of electrode extending portions 40, except for the range of the first range 31, that is, the second range 32 in which the position Q is in the square of the first range 31. Composition. In the first embodiment, the width of the first range 31, that is, the distance (L1) between the electrode extending portions 40 is referred to as WOvm in the direction parallel to the second range 32, and the width of each of the second ranges 32 is further increased. That is, the distance (L2) from the electrode extending portion 30 to the edge of the electrode forming surface 15 is 260 // m, and the width (L3) of the second range is parallel to the first side 35, that is, The distance between the end edge 23 of the electrode extension portion 40 and the edge of the electrode forming surface 15 was 165 μm. ❹ For the electrode structure of the first embodiment, the electrode extending portion 40 is a curved portion, a branch portion, and an intersection portion which are not bent in one or more stages, and the shape is a linear one of the electrode extension portions. Separate from each other. As a result, the n-type electrode 41 is not formed in a range in which the electrode extension portion 40 is closed, that is, the opening portion is provided, and heat generation in the vicinity of the electrode and in the first range 31 can be efficiently radiated. Further, the length (L5) in the longitudinal direction of the electrode extending portion 40 is larger as the distance (L1) between the electrode extension portions 40, and the electrode formation can be increased as the intersection portion is not provided. The electrode extension portion 40 in the surface 15 is formed in a range, and -35-200931684 can emit light in the light-emitting range 29 uniformly while discharging the current concentration range. However, the distance (L1) between the electrode extensions 40 is appropriately adjusted in consideration of the degree of diffusion in the plane of the formed layer, that is, the sheet resistance, etc., thereby being a light-emitting element that can realize a desired current-diffusion body. . In the following description, the light-emitting elements of the first embodiment are mounted on respective characteristics obtained by the light-emitting devices of various types. t Q (Cannonball type I) The light-emitting element of the first embodiment is mounted in one of the leads for each polarity, and one of the fixing pads is sealed with a resin to form a resin lens-integrated seal of a bullet shape. Type of illuminating device. The characteristics obtained by the device which emits light in blue are shown below. Driving current If: 350 (mA), Vf: 3.8 (V), luminous power: 548.7 (mW), input d: 445.4 (nm), λ Ρ: 43 8.7 (nm), external quantum efficiency: 5 5 · 5 (%), power efficiency: 4 1.3 〇 (%) * (Cannonball type II) - For the above-mentioned light-emitting device, the resin contained in the YGA phosphor is preliminarily provided in the cover body mounted on the component of the fixed lead. The characteristics of the white-emitting light-emitting device obtained by the coating are as follows. Driving current If : 3 50 ( mA ) . Vf : 3.8 ( V ), color temperature Tcp : 575 1 (K ), chromaticity (X: 0.327, y: 0.333), luminous efficiency: 79.5 (lm/W). -36-200931684 (Integrated Sealing Type) The light-emitting element of the first embodiment is mounted in two sets of leads for each polarity (four in total), and one set of the fixing lead is inside the cover. The characteristics of the blue-emitting light-emitting device obtained by integrally sealing the resin lens are as follows. , drive current If: 350 (mA) - Vf : 3.7 ( V ), illuminating power: 603.6 ( mW ) ' λ d : 445.3 ( nm ) , AP : 438 (nm ) , external quantum efficiency : 60.9 ( % ) Power efficiency: 46.6 (%). (Embodiment 2) In addition, in the case of a light-emitting element having the same structure as that of the light-emitting element of Example 1, the shape of the electrode is reduced in a similar relationship. The light-emitting element of □800 was obtained in the same manner as in the first embodiment. The light-emitting output and the heat-releasing effect were obtained. (Comparative Example 1) * A plan view of the light-emitting element 301 of Comparative Example 1 is shown in Fig. 11 . The light-emitting element 301 in the figure is a slightly square-shaped crystal grain of D600 "m size, and compared with the light-emitting element 110 of the first embodiment, 'only the size of the crystal grain and the pattern of formation of the electrode are different'. Other structures are substantially For the same. The same components as those described above are denoted by the same reference numerals, and detailed description thereof will be omitted. -37- 200931684 In the light-emitting element 301 of Fig. 11, the n-type electrode 51 of the first electrode is reduced in the same manner as the electrode forming surface 15 as the center C of the electrode forming surface 15 as a center, that is, A square-shaped electrode extension 50 is formed. In other words, the corner portion of the electrode extension portion 50 has a curved portion bent at a substantially right angle. Further, for the corner portion of one of the squares, the device has an electrode pad portion having an external connection range 16. As shown in Fig. 11, the electrode, the extending portion 50 is formed by a midpoint point from the center C of the electrode forming surface 15 to the end edge, and is formed at a midpoint of the intermediate point, that is, the electrode extending portion is 0 It is disposed on the edge side of the electrode forming surface 15 . Further, the electrode forming surface 310 has the first range 31 in the range sandwiched by the electrode extending portion 50 and the second portion from the first range 31 to the edge of the electrode forming surface 15 as in the first embodiment. Range 32. In the light-emitting element of Comparative Example 1, the first range 31 is a closed range surrounded by the electrode extending portion 50, and does not have an opening portion. Q (Comparative Example 2) Further, another pattern-forming light-emitting device having an electrode was shown in Fig. 12 as Comparative Example 2. The light-emitting element 401 of Fig. 12 was implemented. In the same manner as in Comparative Example 1, the light-emitting element 401 of the same example 1 was provided with the surrounding electrode structure. Incidentally, the same constituent elements as those of the above-described configuration are denoted by the same reference numerals, and detailed description thereof will be omitted. In the light-emitting element 401 of Fig. 12, a square-shaped electrode forming surface 15 is provided, and an electrode pad portion having an external connection range 16 is provided at a corner portion which is a pair of opposite directions. The electrode extending portion -38 - 200931684 60 extending from the electrode pad portion 16 is formed by surrounding the four circumferential edges of the electrode forming surface 15 to form a surrounding electrode. Further, the electrode extending portion 60 is extended to be connected to the center of each of the rectangular sides of the rectangular shape, that is, the rectangular shape is divided into four equal parts. That is, the n-type electrode of the first electrode 61 of Comparative Example 2 has a bent portion, and the intersection portion is similar to the electrode structure of the light-emitting element shown in Fig. 15 at this point. Further, there will be a relative luminous intensity distribution map of the light-emitting elements φ 1, 301, 401 of the first embodiment and the comparative examples 1 and 2, which are shown in (a), (b), and (c) of Fig. 13 . However, for each of the light-emission profiles displayed on the gray scale scale, the display in the electrode forming surface 15 of the light-emitting element is displayed at a high concentration level, and the light-emitting intensity is increased, and the temperature rise region is further increased. It is also known that in any of the light-emitting elements 1, (301, 401) of (a), (b), and (c), it is in the vicinity of the electrode pad portion 16 that it has a high luminous intensity range. In the light-emitting element 1 of the first embodiment, as shown in FIG. 13(a), the neodymium electrode pad portion 16 is centered, and in the vicinity of the linear electrode extending portion 30 extending therefrom, the light-emitting intensity is also high. . With this, in the range, the temperature rises in other ranges, but as described above, the range of the n-type electrode structure, that is, the first range 3 1 and the second range, is remarkable because the heat release effect is remarkable. , to control. In addition, the specific thermal resistance is 6.52 to 7.67 ° C / W (the thickness of the support substrate made of Cu-W is set to 100, 200, 300, 400 // m, and is placed on a ceramic substrate for measurement. )By. On the other hand, the light-emitting element 30 1 of Comparative Example 1 has a surrounding range of the electrode extending portion 50 as shown in FIG. 13 - 39 - 200931684 (b). The illuminating concentration is concentrated in the part of the 'heat storage. Specifically, in the vicinity of the electrode pad portion 16, the concentration of the local current is observed, and this tendency becomes remarkable. In this way, not only the inside of the rectangular shape of the first electrode but also the outer side of the pad portion 16 has the same tendency as the inner portion. Similarly, in the light-emitting element 401 of Comparative Example 2, as shown in Fig. 13 (c), it is understood that there is an imbalance in current diffusion between the divisions. In particular, as shown by the dotted line in the figure, the concentration of the current is generated even at the intersection of the electrode extending portion 60 even if the distance from the electrode pad portion 16 is relatively distant. In other words, the current of the four corners (curved portions) which are divided into the rectangular shape of the cell is biased, and the unevenness of the current becomes remarkable. From the above results, it is understood that the light-emitting element 1 of the first embodiment has excellent heat dissipation properties and high resistance even under a large current. In Comparative Example 1, as described above, in comparison with the element width and the area, even in the first wide range, the inside of the wide range, and the inside of the first range, the light-emitting concentration is generated, and the element characteristics are degraded. In other words, in the electrode structure, it is possible to control the local concentration of the current and enhance the heat release by arranging the bending of the electric pole extension portion, the crossing range, and the arrangement of the current diffusion in the element efficiently. At the same time, 'the unevenness of the current density in the electrode can be taken as the limit. That is, it can be used as a light-emitting element that maintains or enhances the light output while achieving current uniformity and uniformity of light emission. [Industrial Applicability] -40- 200931684 The semiconductor light-emitting device and the semiconductor light-emitting device manufacturing method of the present invention can be suitably used for a light source for illumination, an LED display, a backlight source, an annunciator, an illumination switch, and various Detectors and various indicators. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a light-emitting element of an embodiment. Figure 2 is a schematic cross-sectional view taken along line π-ll' of Figure 1. 0 Figure 3 is a schematic cross-sectional view of the m-πι' line in Figure 1. Fig. 4 is a plan view showing another light-emitting element of the embodiment. Fig. 5 is an explanatory view showing a method of manufacturing a light-emitting element of the embodiment. Fig. 6 is an explanatory view showing a method of manufacturing a light-emitting element of the embodiment. Fig. 7 is an explanatory view showing a method of manufacturing a light-emitting element of the embodiment. Fig. 8 is an explanatory view showing a method of manufacturing a light-emitting element of the embodiment. Fig. 9 is a schematic cross-sectional view showing a light-emitting device of the embodiment. - Figure 10 is a plan view of the light-emitting element of Embodiment 1. Fig. 11 is a plan view showing a light-emitting element of Comparative Example 1. Fig. 12 is a plan view showing a light-emitting element of Comparative Example 2. Fig. 13 is a view showing the distribution of the relative luminous intensity of the light-emitting element, (see, relating to Example 1, (b) relating to Comparative Example 1 (c) regarding the light-emitting element of Comparative Example 2. -41 - 200931684 Figure 14 is about Fig. 15 is a plan view of a light-emitting device of another conventional form. [Description of main components] 1. 60, 101, 301, 401: light-emitting element (nitride semiconductor--component) 2: Light-emitting device 3: Support table 4: Support substrate 5: Adhesive layer 5a: Semiconductor layer-side adhesive layer 5b: Support substrate-side adhesive layer 6: Growth substrate 7: Protective film 8: Component ❹ 9: Wavelength conversion member 10: Semiconductor structure '11: first conductive layer (n-type semiconductor layer) - 12: second conductive layer (p-type semiconductor layer) 13: light-emitting layer (active layer) 14: base 14a, 14b: lead 15: Electrode forming surface 16: External connection range (electrode pad portion) -42 200931684 17 : Lens 18: Conductive wire 19: Cup 20: Electrodes 21, 41, 51, 61: First electrode (n-shaped electrode) , 22 : 2nd electrode (p type electrode) t 23 : end of the electrode extension 0 24 : opening portion 26 : element covering member 29 : light-emitting range 30, 30 ′, 40, 50, 60: electrode extending portion 3 1 : first range 3 2 : second range 33 : second right-and-left range 34 : second Upper and lower ranges 〇3 5 : 1st side 36 : 2nd side • 3 5 ' : Side parallel to the 1st side - 3 6 ' : Side 100 parallel to the 2nd side, 200 : Light-emitting element 101 : N-type electrode pad portion 101a: electrode extension portion 1 0 1 b : surrounding electrode 102: p-type electrode pad portion -43 - 200931684 2〇1 : electrode pad portion 201a: electrode extension portion 2 0 1 b : surrounding electrode 203 : Division range C : Center of electrode formation surface · D : Cutting position, Η 1 : Width of the first range Ο Η 2 : Total of widths of the second range L 1 : Distance between the extensions of the pair of electrodes 11 : 1 / 2 distance L2 between the pair of electrode extensions: distance L3 from the electrode extension portion to the edge of the semiconductor structure: width L4 of the second left and right range: width L5 of the second upper and lower range: for the electrode extension portion Length in the length direction Μ : midpoint from the center of the electrode forming surface to the end edge ❹ -44 -

Claims (1)

200931684 X. A light-emitting element of the patent application scope belongs to a semiconductor structure (10) having a first conductivity type layer (11) and a second conductivity type layer (12) laminated with a light-emitting layer (13), and a light-emitting element in which the first conductive type layer (11) and the second conductive type layer '(12)' are electrically connected to each other, and the first electrode (21) and the first electrode (22) are opposed to each other. It is a feature that the first electrode (21) includes an electrode extension portion (30) that is formed in a pair of electrode forming surfaces (15) formed on the first conductivity type layer (11) on the light extraction side. The distance (Π) between 1/2 of the electrode extensions (30) in the opposing direction of the pair of electrode extensions (30) is from the electrode extension (30) to the electrode formation surface ( The distance (L2) of the end edge of 15) is short. Φ 2. The light-emitting element ' belongs to a semi-conducting structure (10) having a first conductive type layer (11) and a second conductive type layer (12) laminated with the light-emitting layer (13), and And the light-emitting elements of the first electrode (21) and the second electrode (22) which are electrically connected to each other in the first conductive type layer (11) and the second conductive type layer (12), and are characterized in that The first electrode (21) includes an electrode forming surface (15) formed on the first conductive type layer (11) on the light extraction side, and a pair of electrode extensions facing each other from -45 to 200931684 ( 30) The electrode forming surface (15) includes a first range (31) sandwiched by the electrode extension portion (30) in a substantially central region of the electrode forming surface (15), and a position at the first a second range (32) between the outer periphery of the range (31) and the edge of the electrode forming surface (15), and - for the opposite direction of the electrode extending portion (30), from the aforementioned first, first range ( The center of the width from the center of 31) to the edge of the electrode forming surface (15) is at the second range. 3. The light-emitting element according to claim 1 or 2, wherein the electrode extending portion (30) to the electrode forming surface is opposed to the opposing direction of the pair of electrode extending portions (30) The distance (L2) from the edge of (15) is 1.2 times or more and 1.5 times or less the distance (11) of 1/2 between the pair of electrode extensions (30). The light-emitting element according to any one of the first to third aspects of the invention, wherein the electrode extending portion 30 is formed on the light extraction side. 5) The center is added as a reference and is symmetrically added to the configurator. 5. The light-emitting element according to any one of claims 1 to 4, wherein the electrode extending portion (30) is linear in view of a plane from the light extraction side. The optical component of the present invention, wherein the first range (31) held by the electrode extending portion (30) is open to the optical component. The direction in which the electrode extensions (30) extend. 7. The light-emitting element according to any one of the preceding claims, wherein the pair of electrode extensions (30) are superimposed on the electrode extension, (30), each having The external electrodes are connected to the external connection range (16), and the external connection range (16) of the pair is mutually biased with respect to the longitudinal direction and/or the short direction of the electrode forming surface (15). By. 8. The light-emitting element according to any one of the preceding claims, wherein the first electrode (2 1 ) and the second electrode (22) are viewed from a plane on the light extraction side. The second extension (32) of the first electrode Ο (21) is formed to be offset from the second range (32) between the electrode edge forming surface (15) and the second electrode (32). Electrode ' (22). The light-emitting element according to any one of the first aspect, wherein the second range (32) located outside the first range is disposed in the electrode extension portion (30). a second left-and-right range of the both ends of the extending direction of the extending direction, and a second upper and lower range of the both ends of the electrode extending portion (30) in the opposing direction, -47-200931684, each of the second and right ranges The width (L3) is 0.2 or more and 0.8 or less of the width (L4) of each of the aforementioned 2±T ranges. -10. A light-emitting device comprising: a base (14) having a first electrode pattern and a second electrode pattern; and a substrate (14) mounted on the base (14), each electrically connecting the first electrode pattern and A light-emitting device of one of the second electrode patterns or the plurality of light-emitting elements (1), wherein the light-emitting device (1) is a light-emitting device according to any one of claims 1 to 9 And covered by the component covering member (26). 11. The light-emitting device according to claim 10, wherein the element covering member (26)' contains a wavelength converting member (9) that absorbs at least a part of the light emitted from the light-emitting element (1) and performs wavelength conversion. And/or a light diffusing member that reflects the emitted light from the light-emitting element (1). ❹ -48-