TW200733318A - Wafer-level package structure and production method therefor - Google Patents
Wafer-level package structure and production method thereforInfo
- Publication number
- TW200733318A TW200733318A TW095143570A TW95143570A TW200733318A TW 200733318 A TW200733318 A TW 200733318A TW 095143570 A TW095143570 A TW 095143570A TW 95143570 A TW95143570 A TW 95143570A TW 200733318 A TW200733318 A TW 200733318A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- metal layer
- package structure
- bonding
- package
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0051—Packages or encapsulation for reducing stress inside of the package structure between the package lid and the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/023—Housings for acceleration measuring devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
-
- H10W76/60—
-
- H10W95/00—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0172—Seals
- B81C2203/019—Seals characterised by the material or arrangement of seals between parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/038—Bonding techniques not provided for in B81C2203/031 - B81C2203/037
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
- G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape
-
- H10W72/07331—
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005341223 | 2005-11-25 | ||
| JP2005341225 | 2005-11-25 | ||
| JP2005341253 | 2005-11-25 | ||
| JP2005341224 | 2005-11-25 | ||
| JP2005371052 | 2005-12-22 | ||
| JP2005371049 | 2005-12-22 | ||
| JP2005371053 | 2005-12-22 | ||
| JP2005371054 | 2005-12-22 | ||
| JP2006089589A JP4081496B2 (ja) | 2005-11-25 | 2006-03-28 | ウェハレベルパッケージ構造体、加速度センサ |
| JP2006089558A JP4088317B2 (ja) | 2005-12-22 | 2006-03-28 | センサエレメント |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200733318A true TW200733318A (en) | 2007-09-01 |
Family
ID=38067272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095143570A TW200733318A (en) | 2005-11-25 | 2006-11-24 | Wafer-level package structure and production method therefor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8080869B2 (zh) |
| EP (2) | EP1953814B1 (zh) |
| TW (1) | TW200733318A (zh) |
| WO (1) | WO2007061047A1 (zh) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5260890B2 (ja) * | 2007-05-24 | 2013-08-14 | パナソニック株式会社 | センサ装置およびその製造方法 |
| JP2009049113A (ja) * | 2007-08-17 | 2009-03-05 | Oki Electric Ind Co Ltd | Soi基板、soi基板の製造方法及び、半導体加速度センサ |
| WO2009081459A1 (ja) * | 2007-12-20 | 2009-07-02 | Fujitsu Limited | パッケージドマイクロ可動素子製造方法およびパッケージドマイクロ可動素子 |
| WO2009116162A1 (ja) * | 2008-03-21 | 2009-09-24 | 富士通株式会社 | パッケージドマイクロ可動素子製造方法およびパッケージドマイクロ可動素子 |
| JP5376982B2 (ja) * | 2008-06-30 | 2013-12-25 | キヤノン株式会社 | 機械電気変換素子と機械電気変換装置および機械電気変換装置の作製方法 |
| JP2011128140A (ja) | 2009-11-19 | 2011-06-30 | Dainippon Printing Co Ltd | センサデバイス及びその製造方法 |
| JP2011109002A (ja) * | 2009-11-20 | 2011-06-02 | Citizen Holdings Co Ltd | 集積デバイスおよび集積デバイスの製造方法 |
| JP5218455B2 (ja) | 2010-03-17 | 2013-06-26 | 株式会社デンソー | 半導体力学量センサおよびその製造方法 |
| US8513746B2 (en) | 2010-10-15 | 2013-08-20 | Rohm Co., Ltd. | MEMS sensor and method for producing MEMS sensor, and MEMS package |
| JP5732286B2 (ja) * | 2011-03-16 | 2015-06-10 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20130155629A1 (en) * | 2011-12-19 | 2013-06-20 | Tong Hsing Electronic Industries, Ltd. | Hermetic Semiconductor Package Structure and Method for Manufacturing the same |
| JP5874609B2 (ja) | 2012-03-27 | 2016-03-02 | 株式会社デンソー | 半導体装置およびその製造方法 |
| FR3000484B1 (fr) * | 2012-12-27 | 2017-11-10 | Tronic's Microsystems | Dispositif micro-electromecanique comprenant une masse mobile apte a se deplacer hors du plan |
| JP6339669B2 (ja) | 2013-07-08 | 2018-06-06 | モーション・エンジン・インコーポレーテッド | Memsデバイスおよび製造する方法 |
| US10273147B2 (en) | 2013-07-08 | 2019-04-30 | Motion Engine Inc. | MEMS components and method of wafer-level manufacturing thereof |
| EP3028007A4 (en) | 2013-08-02 | 2017-07-12 | Motion Engine Inc. | Mems motion sensor and method of manufacturing |
| JP6590812B2 (ja) | 2014-01-09 | 2019-10-16 | モーション・エンジン・インコーポレーテッド | 集積memsシステム |
| CN103818874B (zh) * | 2014-02-12 | 2016-02-10 | 北京时代民芯科技有限公司 | Mems结构与处理电路集成系统的封装方法 |
| US10222281B2 (en) * | 2014-03-26 | 2019-03-05 | Denso Corporation | Force detection apparatus having high sensor sensitivity |
| WO2015154173A1 (en) | 2014-04-10 | 2015-10-15 | Motion Engine Inc. | Mems pressure sensor |
| WO2015184531A1 (en) | 2014-06-02 | 2015-12-10 | Motion Engine Inc. | Multi-mass mems motion sensor |
| JP2016072606A (ja) * | 2014-09-30 | 2016-05-09 | 日本特殊陶業株式会社 | 配線基板および多数個取り配線基板 |
| US9491867B2 (en) * | 2014-09-30 | 2016-11-08 | Ngk Spark Plug Co., Ltd. | Wiring substrate and multi-piece wiring substrate |
| CA3004760A1 (en) | 2014-12-09 | 2016-06-16 | Motion Engine Inc. | 3d mems magnetometer and associated methods |
| WO2016112463A1 (en) | 2015-01-15 | 2016-07-21 | Motion Engine Inc. | 3d mems device with hermetic cavity |
| JP6341190B2 (ja) | 2015-02-16 | 2018-06-13 | 株式会社デンソー | 半導体装置の製造方法 |
| TW201728905A (zh) * | 2016-02-03 | 2017-08-16 | 智動全球股份有限公司 | 加速度計 |
| JP6073512B1 (ja) * | 2016-03-10 | 2017-02-01 | 株式会社フジクラ | 差圧検出素子、流量計測装置、及び、差圧検出素子の製造方法 |
| US10221062B2 (en) * | 2016-10-03 | 2019-03-05 | Continental Automotive Systems, Inc. | Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow cross-shaped cavity |
| IT201700071798A1 (it) * | 2017-06-27 | 2018-12-27 | St Microelectronics Srl | Sensore di forza multiassiale, metodo di fabbricazione del sensore di forza multiassiale, e metodo di funzionamento del sensore di forza multiassiale |
| EP3671155B1 (en) * | 2017-09-20 | 2021-10-20 | Asahi Kasei Kabushiki Kaisha | Surface stress sensor, hollow structural element, and method for manufacturing same |
| US11029227B2 (en) * | 2018-06-04 | 2021-06-08 | Vitesco Technologies USA, LLC | CSOI MEMS pressure sensing element with stress equalizers |
| DE102019207963B4 (de) * | 2018-06-04 | 2023-11-09 | Vitesco Technologies USA, LLC (n.d.Ges.d.Staates Delaware) | Csoi - mems-druckerfassungselement mit spannungsausgleichern |
| CN110579516A (zh) * | 2019-09-02 | 2019-12-17 | 青岛歌尔智能传感器有限公司 | 二氧化氮气体检测器件及其制作方法、以及电子产品 |
| TWI773015B (zh) * | 2020-12-14 | 2022-08-01 | 華邦電子股份有限公司 | 封裝結構及其製造方法 |
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| JP2006322717A (ja) * | 2005-05-17 | 2006-11-30 | Kazuhiko Ishihara | センサチップおよびその製造方法 |
-
2006
- 2006-11-24 EP EP06833249.3A patent/EP1953814B1/en not_active Not-in-force
- 2006-11-24 EP EP17183596.0A patent/EP3257809A1/en not_active Withdrawn
- 2006-11-24 US US12/094,600 patent/US8080869B2/en not_active Expired - Fee Related
- 2006-11-24 WO PCT/JP2006/323445 patent/WO2007061047A1/ja not_active Ceased
- 2006-11-24 TW TW095143570A patent/TW200733318A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007061047A1 (ja) | 2007-05-31 |
| US20090159997A1 (en) | 2009-06-25 |
| EP1953814A4 (en) | 2013-11-06 |
| EP1953814A1 (en) | 2008-08-06 |
| EP1953814B1 (en) | 2017-09-06 |
| US8080869B2 (en) | 2011-12-20 |
| EP3257809A1 (en) | 2017-12-20 |
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