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TW200733206A - Substrate processing apparatus, substrate processing method, program, and recording medium having the same - Google Patents

Substrate processing apparatus, substrate processing method, program, and recording medium having the same

Info

Publication number
TW200733206A
TW200733206A TW095138422A TW95138422A TW200733206A TW 200733206 A TW200733206 A TW 200733206A TW 095138422 A TW095138422 A TW 095138422A TW 95138422 A TW95138422 A TW 95138422A TW 200733206 A TW200733206 A TW 200733206A
Authority
TW
Taiwan
Prior art keywords
film
substrate processing
chamber
processing apparatus
wafer
Prior art date
Application number
TW095138422A
Other languages
Chinese (zh)
Other versions
TWI443719B (en
Inventor
Kunihiro Tada
Kensaku Narushima
Satoshi Wakabayashi
Susumu Yamauchi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200733206A publication Critical patent/TW200733206A/en
Application granted granted Critical
Publication of TWI443719B publication Critical patent/TWI443719B/en

Links

Classifications

    • H10P72/0461—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H10D64/0112—
    • H10D64/01125—
    • H10P14/43—
    • H10P14/432—
    • H10P70/234—
    • H10P72/0468—
    • H10P72/3304—
    • H10W20/033—
    • H10W20/035—
    • H10W20/047—
    • H10W20/0526—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

To provide a substrate processing apparatus or the like which can form a Ti silicide film having a more flat and uniform interface with a base layer, and can form a contact with lower resistance as a result. The substrate processing apparatus 100 is provided with a first common conveyance chamber 102 connected to processing chambers 104A-104D in common, and a second common conveyance chamber 120 connected to processing chambers 104E and 104F. The processing chambers 104E, 104F, 104A, 104C, and 104B are provided as a COR processing chamber wherein impurities of natural oxide film on an Si wafer and gas element are chemically reacted with each other to produce a product, a PHT processing chamber to remove the product generated on the Si wafer by heating, a Ti film formation chamber to form a Ti film on the Si surface of the Si wafer, a silicide formation chamber to cause silication reaction between the Ti film and the base layer so as to form a Ti silicide film, and a TiN film formation chamber to form a TiN film on the Ti silicide film.
TW095138422A 2005-10-19 2006-10-18 A substrate processing method, a program and a recording medium TWI443719B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005303940A JP5046506B2 (en) 2005-10-19 2005-10-19 Substrate processing apparatus, substrate processing method, program, and recording medium recording program

Publications (2)

Publication Number Publication Date
TW200733206A true TW200733206A (en) 2007-09-01
TWI443719B TWI443719B (en) 2014-07-01

Family

ID=37962303

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095138422A TWI443719B (en) 2005-10-19 2006-10-18 A substrate processing method, a program and a recording medium

Country Status (3)

Country Link
JP (1) JP5046506B2 (en)
TW (1) TWI443719B (en)
WO (1) WO2007046204A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI469242B (en) * 2011-09-14 2015-01-11 日立國際電氣股份有限公司 Cleaning method, manufacturing method of semiconductor device, substrate processing apparatus, and recording medium
TWI575638B (en) * 2015-08-27 2017-03-21 日立國際電氣股份有限公司 A substrate processing apparatus, a manufacturing method, a program, and a recording medium of a semiconductor device
TWI619845B (en) * 2014-02-28 2018-04-01 Tokyo Electron Ltd Processing method, memory medium and plating processing system before plating

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JP4703364B2 (en) * 2005-10-24 2011-06-15 株式会社東芝 Semiconductor device and manufacturing method thereof
WO2009001774A1 (en) * 2007-06-22 2008-12-31 Ulvac, Inc. Method for protecting semiconductor wafer and process for producing semiconductor device
JP2009010043A (en) * 2007-06-26 2009-01-15 Tokyo Electron Ltd Substrate processing method, substrate processing apparatus, recording medium
JP5171192B2 (en) * 2007-09-28 2013-03-27 東京エレクトロン株式会社 Metal film formation method
JP2009123793A (en) * 2007-11-13 2009-06-04 Shimadzu Corp Cluster type vacuum processing equipment
KR101569956B1 (en) * 2008-07-31 2015-11-17 도쿄엘렉트론가부시키가이샤 High throughput processing system for chemical treatment and thermal treatment and method of operating
JP2011066060A (en) * 2009-09-15 2011-03-31 Tokyo Electron Ltd Forming method of metal silicide film
JP2011100962A (en) * 2009-10-09 2011-05-19 Tokyo Electron Ltd Method of forming film and plasma processing apparatus
KR20110093476A (en) * 2010-02-12 2011-08-18 삼성엘이디 주식회사 Vapor deposition system, light emitting device manufacturing method and light emitting device
US10217819B2 (en) 2015-05-20 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor device including metal-2 dimensional material-semiconductor contact
JP6600588B2 (en) * 2016-03-17 2019-10-30 東京エレクトロン株式会社 Substrate transport mechanism cleaning method and substrate processing system
JP6439774B2 (en) * 2016-11-21 2018-12-19 トヨタ自動車株式会社 Manufacturing method of semiconductor device
JP2020038929A (en) * 2018-09-05 2020-03-12 東京エレクトロン株式会社 Etching method and etching apparatus
JP7362258B2 (en) * 2019-02-08 2023-10-17 東京エレクトロン株式会社 Substrate processing method and film formation system
JP7296806B2 (en) * 2019-07-16 2023-06-23 東京エレクトロン株式会社 RuSi film forming method and substrate processing system
KR102516340B1 (en) * 2020-09-08 2023-03-31 주식회사 유진테크 Substrate processing apparatus and operation method for substrate processing apparatus
JP7608980B2 (en) * 2021-06-22 2025-01-07 東京エレクトロン株式会社 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
JP2025062309A (en) * 2023-10-02 2025-04-14 東京エレクトロン株式会社 Film formation method and semiconductor manufacturing apparatus

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JPH04296021A (en) * 1991-03-26 1992-10-20 Mitsubishi Electric Corp Surface treatment method for semiconductor substrate
JP3086719B2 (en) * 1991-06-27 2000-09-11 株式会社東芝 Surface treatment method
JP3487080B2 (en) * 1996-06-18 2004-01-13 ソニー株式会社 Semiconductor device and manufacturing method thereof
JP3201318B2 (en) * 1997-11-05 2001-08-20 日本電気株式会社 Method for manufacturing semiconductor device
JP2002016018A (en) * 2000-06-30 2002-01-18 Sumitomo Heavy Ind Ltd Device and method for treating substrate
JP4039385B2 (en) * 2003-04-22 2008-01-30 東京エレクトロン株式会社 Removal method of chemical oxide film
JP4833512B2 (en) * 2003-06-24 2011-12-07 東京エレクトロン株式会社 To-be-processed object processing apparatus, to-be-processed object processing method, and to-be-processed object conveyance method
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
JP4651955B2 (en) * 2004-03-03 2011-03-16 東京エレクトロン株式会社 Deposition method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI469242B (en) * 2011-09-14 2015-01-11 日立國際電氣股份有限公司 Cleaning method, manufacturing method of semiconductor device, substrate processing apparatus, and recording medium
TWI619845B (en) * 2014-02-28 2018-04-01 Tokyo Electron Ltd Processing method, memory medium and plating processing system before plating
TWI575638B (en) * 2015-08-27 2017-03-21 日立國際電氣股份有限公司 A substrate processing apparatus, a manufacturing method, a program, and a recording medium of a semiconductor device

Also Published As

Publication number Publication date
WO2007046204A1 (en) 2007-04-26
TWI443719B (en) 2014-07-01
JP2007115797A (en) 2007-05-10
JP5046506B2 (en) 2012-10-10

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees