JP2002016018A - Device and method for treating substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To promptly form a uniform layer of a silicide-forming material. SOLUTION: An SiO2 pattern layer is formed on an Si wafer which constitutes a substrate W. After the substrate W, carrying the SiO2 pattern layer, is set in a first deposition unit 12 via a transporting device 10, a Ti layer is formed on the pattern layer and a contact layer is formed, by silicifying the Ti layer through irradiating of the Ti layer with a laser beam. Then the substrate W is set in a second deposition unit 14 via the transfer apparatus 10 and a TnN barrier layer is formed on the Ti layer. Thereafter, the substrate W is set in a third deposition unit 15 through the transfer apparatus 10 and a Cu main wiring layer is formed on the barrier layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and method for forming ohmic contacts and wiring on a semiconductor substrate by utilizing a film forming method using a plasma beam.

[0002]

2. Description of the Related Art As a film forming apparatus for forming a silicide forming material layer for an ohmic electrode on a semiconductor substrate, there is an apparatus using, for example, sputtering or CVD. In such an apparatus, a silicide-forming material layer such as Ti is formed at an appropriate position on a semiconductor substrate by sputtering or CVD. The semiconductor substrate on which such a material layer is formed is thereafter subjected to a heat treatment. As a result, the underlying semiconductor material diffuses and reacts with this material layer, and an ohmic contact can be formed.

[0003]

However, in the film forming apparatus as described above, contamination can be relatively reduced, but a uniform silicide forming material layer is quickly formed at the bottom of a hole or trench having a large aspect ratio. Is difficult.

After the formation of the ohmic contact layer, a barrier layer, a wiring layer, and the like are formed by using, for example, sputtering, CVD, or electroplating. However, a wiring layer having excellent electric characteristics is quickly formed. It was difficult to form efficiently.

Accordingly, an object of the present invention is to rapidly form a uniform silicide-forming material layer and an ohmic contact layer having excellent electric characteristics.

Another object of the present invention is to quickly form a high-quality wiring layer connected to an ohmic contact layer.

[0007]

In order to solve the above-mentioned problems, a substrate processing apparatus according to the present invention includes a plasma source for forming a contact material for supplying a plasma beam, and a plasma source arranged to face the substrate to guide the plasma beam. A contact material deposition unit including a contact material deposition hearth having a material evaporation source capable of accommodating the silicide formation material; and a heat treatment unit for heating the silicide formation material film formed on the substrate.

In the above substrate processing apparatus, when forming a film of a silicide forming material, a plasma beam from a plasma source for forming a contact material is used. A film of a silicide-forming material having properties can be obtained quickly. After the formation of the silicide-forming material film, the heat treatment unit heats the silicide-forming material film to silicide, and an ohmic contact can be formed there.

Here, the silicide-forming material is formed by using a plasma beam, and not only can a high-quality film be formed quickly, but also a semiconductor layer or an insulating layer serving as a base may be formed by particles incident on the substrate during the film formation. It also has the function of removing contaminants and the like adhering to the surface of the layer and purifying the surface of the semiconductor layer or the insulating layer. That is, in normal film formation, it is necessary to sufficiently clean the surface of the underlayer immediately before the formation of the silicide-forming material by sputtering or the like, and to prevent the silicide-forming material from being contaminated again after the sputtering or the like. Regardless, by using the above-mentioned base purification function (self-bias or bias effect),
The surface cleaning process can be simpler and more complete. Further, by attracting ions by the above-described bias effect, it is possible to strike the substrate surface with the ions, for example, in a groove or an opening formed as a pattern in an insulating layer on a semiconductor layer, it is difficult to form a void or the like, and A film of a silicide-forming material with good orientation can be formed.

[0010] In a preferred aspect of the above apparatus, the heat treatment unit generates a laser beam for heating a film of a silicide forming material formed on the substrate, and a laser beam having a predetermined beam shape. It has a beam shaping optical system to be incident thereon and a scanning means for scanning the substrate with laser light.

In the above-described substrate processing apparatus, only the film of the silicide-forming material on the surface can be quickly heated by scanning the substrate with laser light after the film of the silicide-forming material is formed. An ohmic contact with good electrical characteristics can be formed while suppressing damage.

Further, a preferred embodiment of the above apparatus further comprises a wiring layer forming unit for forming a wiring layer on the substrate.

In the above substrate processing apparatus, a wiring layer can be quickly formed on a substrate in which a layer of a silicide forming material is formed in a contact material film forming unit and a heat treatment unit.

In a preferred aspect of the above-mentioned apparatus, the wiring layer forming unit is arranged so as to face a plasma beam for supplying a plasma beam to a wiring film forming plasma source, and to guide the plasma beam and accommodate a metal wiring material. And a wiring film hearth having an appropriate material evaporation source.

In the above-described substrate processing apparatus, a plasma beam from a plasma source for a wiring layer is used to form a wiring layer containing a vaporized material. Can be formed.

In a preferred aspect of the above-described apparatus, the apparatus further includes a barrier layer forming unit for forming a barrier layer on a substrate before forming a wiring layer in the wiring layer forming unit.

In the above film forming apparatus, since the barrier layer can be formed on the substrate before the wiring layer is formed, it is possible to prevent damage to the base of the wiring and obtain a good wiring.

In a preferred aspect of the above apparatus, the contact material film forming unit forms a film of the silicide forming material on a substrate having a pattern, which is disposed in the first film forming chamber, and the heat treatment unit forms the second film forming film. Forming an ohmic contact layer by heat-treating the silicide forming material of the substrate disposed in the chamber; forming a barrier layer on the substrate disposed in the third film forming chamber; A unit for forming a wiring layer on the substrate disposed in the third film forming chamber;
The apparatus further includes a transfer device that transfers the substrate between the first to fourth film formation chambers.

In the above substrate processing apparatus, the transfer device transfers the substrate on which the silicide forming material has been formed from the first film forming chamber to the second film forming chamber, and transfers the substrate after forming the ohmic contact to the second film forming chamber. From the third film formation chamber to the fourth film formation chamber, and the barrier layer and the metal layer to be connected to the ohmic contact layer can be easily and quickly transferred to the third film formation chamber. Can be formed.

In a preferred aspect of the above-mentioned apparatus, the silicide-forming material contains at least one of titanium, cobalt and nickel.

In a preferred embodiment of the above device, the material of the barrier layer contains at least one of titanium nitride, tantalum nitride and tantalum, and the material of the metal wiring is
It contains at least one of copper, aluminum, silver, and gold. That is, the material of the barrier layer can be not only a simple substance of titanium nitride, tantalum nitride and tantalum, but also an alloy of a combination of these, or an alloy containing another metal or the like. Further, the material of the metal wiring can be not only a simple substance of copper, aluminum, silver, and gold, but also an alloy of a combination thereof, or an alloy containing another metal or the like.

Further, according to a preferred aspect of the substrate processing apparatus, the contact material forming unit and the wiring layer forming unit may be configured so that at least one of the magnet and the coil is annularly formed around the contact material forming or wiring layer hearth. The apparatus further includes a magnetic field control member disposed to control a magnetic field above and in proximity to the hearth, and the plasma source for contact material film formation or wiring film is a pressure gradient plasma gun.

In the above case, the plasma beam incident on the hearth by the magnetic field control member can be corrected by a cusp-shaped magnetic field to form a silicide-forming material layer or a wiring layer having a more uniform thickness.

According to a preferred aspect of the film forming apparatus, the hearth for forming a contact material and the wiring layer forming unit may further include a potential adjusting means for adjusting the potential of the substrate on which the film is formed.

In the above case, since the potential adjusting means adjusts the potential of the substrate, the ion particles (contact electrode layer, metal wiring material, atmosphere substance, etc.) incident on the substrate during film formation.
Can be controlled to some extent, the surface purification of the base and the film formation can be carried out while maintaining an appropriate balance, and the bottom of the grooves and openings formed in the base with the directionality of the film formation. Can be embedded with emphasis. Therefore,
Generation of voids and the like can be effectively prevented.

Further, according to a preferred embodiment of the film forming apparatus, the first to fourth film forming chambers are airtightly connected via a transfer device.

In the above case, since the first to fourth film-forming chambers are connected in an airtight manner, if the transfer device is evacuated to a vacuum, contaminant material may be added to the silicide forming material film, the barrier layer, and the wiring layer during the transfer. Can be reduced.

Further, in the substrate processing method of the present invention, a film of the silicide forming material is deposited on the substrate by supplying a plasma beam toward the material evaporation source to evaporate the silicide forming material of the material evaporation source. One step and a second step of heating a film of a silicide forming material formed on a substrate to form a contact layer.

In the above substrate processing method, a plasma beam is used to form a silicide-forming material film. Therefore, a uniform and high-conductivity silicide-forming material film suitable for forming an ohmic contact is formed. Can be obtained quickly. After the formation of the silicide-forming material film, the film of the silicide-forming material is heated to be silicided, and an ohmic contact can be formed here.

Further, in the second step, the laser beam generated from the laser light source is incident on the substrate while being scanned in a predetermined beam shape, so that only the film of the silicide forming material on the surface can be rapidly heated. An ohmic contact with good electrical characteristics can be formed while suppressing damage to other parts of the substrate.

[0031]

[First Embodiment] FIG. 1 is a plan view showing the entire structure of a substrate processing apparatus according to a first embodiment.
This substrate processing apparatus is a cluster tool type semiconductor processing apparatus that performs a series of processing steps on a substrate W such as a semiconductor wafer at a time, and performs sputtering on the surface of the substrate W around the transfer device 10. A cleaning unit 11 for cleaning in advance, and a silicide forming material layer, i.e., Ti, on the surface of the SiO ₂ pattern layer on the substrate W after cleaning by using ion plating.
A first film forming unit 12 for forming a film, an annealing unit 13 for forming an ohmic contact by heat-treating a Ti film, and forming a TaN barrier layer on a substrate W provided with a Ti film by using ion plating. A second film-forming unit 14, a third film-forming unit 15 for forming a Cu wiring layer on a substrate W provided with a TaN barrier layer using ion plating, and a loading / unloading chamber 1 for loading / unloading the substrate W.
6 is provided.

The cleaning unit 11 supplies a target disposed opposite the substrate W supported on the stage in the processing chamber, a gas source for supplying sputtered particles into the processing chamber, and power to the target and the like. A power supply device is provided, and a contaminant attached to the surface of the substrate W is removed by sputtering to perform surface cleaning. The substrate W to be processed in this case has a SiO ₂ pattern layer formed on the surface of a Si wafer.

Incidentally, the cleaning unit 11 may be a unit which performs cleaning by heating the substrate W. In this case, the substrate W placed on the heating plate for heating the substrate W is raised to an appropriate temperature and held for an appropriate time, so that the contaminants adsorbed on the surface of the substrate W are desorbed. Perform surface cleaning.

The first film forming unit 12 is a contact material film forming unit, and supplies a plasma beam to a material evaporating source for accommodating Ti, which is a silicide forming material, thereby evaporating Ti as a material evaporating source. To deposit a Ti film on the substrate W.

The annealing unit 13 is a heat treatment unit, and heats the Ti film formed on the substrate W by using laser beam scanning to diffuse Si atoms from the semiconductor surface underlying the Ti film. Thereby, Ti and Si
Reacts with the silicide to form an ohmic contact layer made of TiSi ₂ .

The second film forming unit 14 is a barrier layer forming unit, and supplies a plasma beam to a material evaporation source containing Ta, which is a material of the barrier film. Ta is evaporated to deposit a TaN film on the substrate W.

The third film forming unit 15 is a wiring layer forming unit, and supplies a plasma beam to a material evaporation source for accommodating Cu as a material of the wiring film, thereby evaporating Cu of the material evaporation source. To deposit a Cu film on the substrate W.

The loading / unloading chamber 16 is used for exchanging the substrate W with the outside of the substrate processing apparatus.
A cassette stage on which a cassette CA for storing
A stage driving device for moving the cassette stage up and down is provided.

The transfer device 10 and each processing unit 11
15 are connected to be openable and closable via a gate valve 24, and the transfer device 10 and the loading / unloading chamber 16 are also connected to be openable and closable via a gate valve 25. The transfer device 10
A transfer vacuum robot 26, which is a multi-joint transfer means, is disposed at the center of the transfer chamber, and the transfer vacuum robot 26 is disposed between the processing units 11 to 15 and the transfer chamber 16 fixed around the transfer device 10. Allows the transfer of the substrate W.

The outline of the operation of the substrate processing apparatus shown in FIG. 1 will be described below. The cassette CA for storing the unprocessed substrates W to be processed by the substrate processing apparatus is once carried into the carry-in / out room 16 and temporarily stored therein. afterwards,
By the transfer vacuum robot 26 provided in the transfer device 10, the substrate W in the cassette CA arranged in the transfer chamber 16 is set.
Is transported into each of the processing units 11 to 15. In each of the processing units 11 to 15, an insulating layer is formed on a semiconductor substrate, and the substrate W on which the insulating layer is patterned is cleaned in advance as necessary, a Ti film is first formed on the substrate W, and the underlying layer is formed by laser annealing. Is replaced by TiS
After forming an i ₂ ohmic contact layer, a TaN barrier layer and a Cu wiring layer are sequentially formed on the substrate W. The substrates W on which the Cu wiring layers have been formed are sequentially stored in the cassette CA disposed in the loading / unloading chamber 16 via the transfer device 10. The cassette CA containing the processed substrates W is carried out of the substrate processing apparatus.

FIG. 2 shows the transport device 10 shown in FIG.
FIG. 3 is a diagram illustrating a structure of a film forming unit 12.

The transfer vacuum robot 26 extends and contracts and is rotatable around a central axis CX.
And a hand 26b fixed to the tip of the arm 26a and supporting the substrate W. Hand 26 for supporting substrate W
b is sent to the arm 26a to move the substrate W into and out of the surrounding processing units 11 to 15 and the like.

The first film forming unit 12 includes a film forming chamber 41 having a hermetically sealed structure capable of maintaining vacuum airtightness. Below the inside of the film forming chamber 41, a hearth 42a for forming a contact material, which is an evaporating substance source and an anode having a concave portion for accommodating the evaporating substance, and is arranged annularly around the hearth 42a around the hearth 42a. In addition to the anode member 42 comprising the annular auxiliary anode 42b, the annular auxiliary anode 42b
An annular magnet 42c is arranged immediately below the annular magnet 42c.
On one side surface of the lower side wall of the film forming chamber 41, a plasma gun 43 as a plasma source for forming a contact material is provided so as to face the inside of the film forming chamber 41. This plasma gun 4
Reference numeral 3 denotes a pressure gradient type plasma gun disclosed in Japanese Patent Application Laid-Open No. H8-232060, etc., in which one end of a double cylinder composed of a molybdenum outer cylinder and a tantalum inner pipe for introducing a carrier gas is connected. Fixed with a disk-shaped cathode and L at the other end
a gun body 43a formed by placing aB ₆ made of disk, and an annular electromagnetic pole portion 43b having a role of with the role as an electrode withdrawing the plasma beam emitted from the gun main body 43a converging plasma beam, electromagnetic poles A cylindrical portion 43c for connecting the portion 43b to the film forming chamber 41; Further, the plasma gun 43 has an annular steering coil 43d for guiding a plasma beam into the film forming chamber 41 around the cylindrical portion 43c.

The upper part of the film forming chamber 41 and the plasma gun 4
Above 3, an exhaust system 45 for maintaining the inside of the film forming chamber 41 at an appropriate degree of vacuum is provided. The exhaust system 45 includes an exhaust chamber 45a, an exhaust shutoff valve 45b, and an exhaust pump 4 for high vacuum.
5c.

On the side wall between the plasma gun 43 and the exhaust system 45 in the middle part of the film forming chamber 41, a chuck drive for operating the chuck 50 for holding the substrate W in the film forming chamber 41 at necessary timing. A mechanism 51 is provided. The chuck driving mechanism 51 can open and close the chuck 50 between a holding state for holding the substrate W and a release state for releasing the holding of the substrate W. It can be rotated around the center line of the substrate W on the spot. The chuck 50
Consists of a pair of openable and closable hands (not shown),
When they are in the closed state, they are in the holding state, and when they are in the open state, they are in the released state.

An adjusting member 53 for adjusting the temperature and the potential of the substrate W during the film formation is disposed above the inside of the film formation chamber 41. The adjustment member 53 is driven up and down by a drive mechanism 54 to contact the upper surface (rear surface) of the substrate W held by the chuck 50 to adjust the temperature and potential of the substrate W, and a lower position of the chuck drive mechanism 51. Can be moved back and forth with respect to an upper retreat position (the state shown in the drawing) allowing the reversal of the substrate W due to the above.

The operation will be described below. The hand 26b of the transfer vacuum robot 26 is
The substrate W is loaded with the surface to be processed, that is, the film forming surface facing upward, and the substrate W is placed immediately below the chuck 50 in a horizontal state. In this state, when the chuck 50 is separated and released, the hand 26b moves up with the substrate W, and raises the substrate W to the height of the chuck 50. In this state, when the chuck 50 is closed to be in the holding state, the edge of the substrate W is supported by the chuck 50. After that, the arm 26a once descends slightly, and the first film forming unit 12
Leave outside.

Next, it is checked whether or not the adjusting member 53 has been moved to the uppermost retracted position. If the adjusting member 53 is not at the retracted position, the driving mechanism 54 is driven to move the adjusting member 53 to the uppermost retracted position. The substrate W is moved to the retreat position, and the substrate W held by the chuck 50 with the surface to be processed, that is, the film forming surface facing upward, is rotated by 180 degrees around a horizontal axis. Thereby, the substrate W
Is inverted, and the film forming surface faces downward. Next, the adjusting member 53
Is moved to the lowermost operating position, and the lower surface of the adjusting member 53 is uniformly in contact with the upper surface (back surface) of the substrate W arranged with the film forming surface facing downward, so that the temperature and potential of the substrate W are adjusted.

Film formation by ion plating is performed on the substrate W in such a state that the film formation surface is directed downward and the temperature and potential are adjusted to desired values. Describing a specific film formation, the evaporating substance metal such as Ti is accommodated in the recess of the hearth 42a and preheated. In this state, the plasma beam from the plasma gun 43 is
The state is switched from the standby state in which the light is incident on 2b to the film formation state in which the light is incident on the hearth 42a. Thereby, Haas 4
The evaporation material metal 2a evaporates, and a metal film of a silicide forming material is formed and grown on the lower surface of the substrate W, that is, the surface to be processed. When the film formed on the surface to be processed of the substrate W has a predetermined thickness, the apparatus is switched to a standby state in which the plasma beam is incident on the annular auxiliary anode 42b. Thus, the process of forming a thin film on the surface of the substrate W to be processed is completed. By using the plasma gun 43 of this embodiment, a strong plasma beam can be continuously and stably supplied, and a high quality silicide forming material layer (Ti
Film) is formed quickly. In addition, the annular magnet 4
Since the cusp magnetic field is formed above the hearth 42a by 2c and the plasma beam incident on the hearth 42a is corrected, a film having a more uniform thickness is formed on the substrate W. Further, by the self-bias voltage (several tens of volts) induced in the substrate W during the film formation, or by applying a bias voltage of several tens of volts positively, the openings or grooves formed in the underlying SiO ₂ layer are formed. A Ti film having excellent electric characteristics can be quickly formed on the Si layer while removing contaminants attached to the surface of the Si layer so as not to damage the Si layer exposed at the bottom.

Next, the drive mechanism 54 moves the adjusting member 53 to the uppermost end retracted position. Chuck drive mechanism 51
Rotate the chuck 50 to invert the substrate W and turn the film deposition surface upward. In this state, the arm 26a enters the first film forming unit 12 and holds the chuck 5 supporting the substrate W.
Move just below 0. Next, the arm 26a moves up until it almost contacts the rear surface of the substrate W. In this state, when the chuck 50 is released, the substrate W is transferred from the chuck 50 to the arm 26a. The arm 26a unloads the substrate W, with the surface to be processed after film formation facing upward, out of the first film formation unit 12.

It should be noted that the second film forming unit 14 and the third film forming unit 15 shown in FIG. 1 have substantially the same structure as the first film forming unit 12 shown in FIG. Is omitted. However, the second film forming unit 14
Then, a TaN barrier layer is formed on the substrate W instead of the Ti film.
Ta is stored instead of i, and plasma from the plasma gun 43 for the barrier layer is supplied to the hearth 42a while introducing nitrogen gas into the film forming chamber 41. Therefore, a gas source 56 including a flow rate adjusting mechanism for introducing a desired amount of nitrogen gas or the like is essential. Further, the third film forming unit 15
Then, since the Cu wiring layer is formed on the substrate W, Cu is accommodated in the concave portion of the wiring layer hearth 42a, and the plasma from the wiring layer plasma gun 43 is supplied to the hearth 42a.
Supply to a side. As a result, the Cu is melted and evaporated, and the Cu vapor is exposed to the plasma atmosphere and activated.

FIG. 3 shows the annealing unit 13 shown in FIG.
FIG. 3 is a diagram illustrating the structure of FIG. This annealing unit 13
Is the substrate W after the formation of the Ti film in the processing chamber 60 having a closed structure.
Stage 61, which moves with substrate mounted thereon, and substrate W
A laser light source 62 for generating an excimer laser or other laser beam LB for heating the upper contact, a beam shaping optical system 63 for making this laser beam into a line and incident on the substrate W with a predetermined illuminance; A stage driving device 65 for relatively moving the moving stage 61 on which the stage is mounted with respect to the beam shaping optical system 63 and the like by a required amount;
And an exhaust system 66 for maintaining the inside of the chamber at a suitable degree of vacuum.

The moving stage 61 and the stage driving device 65 constitute a scanning means. The operation of the moving stage 61 is controlled by the control device 68 via the stage driving device 65, so that the moving speed and the moving range (including the scanning range) of the moving stage 61 can be appropriately adjusted. Further, the beam shaping optical system 63 is driven by a beam adjusting device 63a, and can appropriately adjust the beam shape of the laser beam LB to be incident on the substrate W. Here, the stage driving device 65, the beam adjusting device 63a, and the control device 68 appropriately control a region where the film formed on the surface of the substrate W is heat-treated.

The laser beam LB from the laser light source 62 is incident on the light amount adjusting section 72 via the mirror 71. The laser light LB appropriately diminished by passing through the light amount adjusting unit 72 enters the beam shaping optical system 63 via the mirror 74. The beam shaping optical system 63 converts the laser beam LB having a rectangular cross section into a linear beam as a homogenizer. That is, the laser beam LB that has passed through the beam shaping optical system 63 is projected as a linear beam extending in the Y-axis direction on the substrate W via the window 60 a formed above the processing chamber 60.

The operation of the annealing unit 13 shown in FIG. 3 will be described below. First, the substrate W immediately after the Ti film is formed in the first film forming unit 12 is loaded into the annealing unit 13 by using the transfer vacuum robot 26 shown in FIG. The substrate W to be carried in is carried into the processing chamber 60 through the opening 60 b with the surface to be treated facing upward, and is placed on the moving stage 61 in a state where cooling immediately after film formation has been completed. When the substrate W is placed on the moving stage 61, a plurality of pins and the like protrude from the moving stage 61 to temporarily support the substrate W, and when the hand 26b retreats out of the processing chamber 60, The substrate W is set on the moving stage 61 by lowering the pins and the like. Next, the moving stage 61 is moved at a constant speed in the X-axis direction with respect to the beam shaping optical system 63 by operating the stage driving device 65.
Since the laser beam LB from the beam shaping optical system 63 moves from one end of the substrate W to the other end, for example, as a linear beam image extending in the Y direction, optical scanning of the entire surface of the substrate W is performed. As a result, the Ti film on the substrate W is rapidly and locally annealed, and the distance between the Ti film and the Si layer immediately below the Ti film is 20 nm.
An ohmic contact layer having a thickness of at least nm is formed.

FIG. 4 is a view for explaining a specific processing procedure in the substrate processing apparatus shown in FIGS.

At a predetermined portion on Si substrate 101, p ⁺ region 102 as a conductive layer is formed in advance. further,
An SiO ₂ pattern layer 10 having a plurality of openings VH and the like is formed on this Si wafer 101 by using a normal semiconductor manufacturing process.
3 is formed (FIG. 4A).

Next, the substrate W on which the SiO ₂ pattern layer 103 has been formed is carried into the substrate processing apparatus shown in FIG.
Transported to the transfer device 10
The substrate W is conveyed to the first film forming unit 12 by using and set inside.

Next, a silicide forming material layer 104 made of Ti is first formed on the substrate W set in the first film forming unit 12 (FIG. 4B). That is, by causing a plasma beam from the plasma gun 43 to be incident on the hearth 42a to evaporate Ti, Ti is deposited on the upper surface of the SiO ₂ pattern layer 103 and the inner wall of the opening VH to form the silicide forming material layer 104. Is done. At this time, while the contaminant layer attached to the surface of the SiO ₂ pattern layer 103 and the surface of the p ⁺ region 102 is removed by the application of a self-bias voltage or a positive bias voltage, the surface of the SiO ₂ pattern layer 103 has irregularities. Irrespective of the crystal state, a silicide-forming material layer 104 having good adhesion is formed between the silicide-forming material layer 104 and the SiO ₂ pattern layer 103.

Next, the substrate W on which the silicide forming material layer 104 has been formed is transferred from the first film forming unit 12 to the annealing unit 13 via the transfer device 10, where the substrate W
By irradiating laser light to the right place on the surface and heating,
TiSi ₂ ohmic contact layer CL between p ⁺ region 102 and silicide forming material layer 104 at the bottom of opening VH
Is formed (FIG. 4C).

Next, the substrate W on which the silicide forming material layer 104 and the ohmic contact layer CL are formed is transferred from the annealing unit 13 to the second film forming unit 14 via the transfer device 10.

Next, TaN is deposited on the silicide forming material layer 104 of the substrate W set in the second film forming unit 14.
Is formed (FIG. 4D). That is, the plasma beam from the barrier layer plasma gun 43 is made incident on the barrier layer hearth 42a, and Ta is evaporated under an atmosphere of nitrogen gas, whereby SiO
₂ above the pattern layer 103 and the opening V
TaN is deposited on the Ti layer on the inner surface of H and the TiSi ₂ ohmic contact layer CL to form the barrier layer 105 having a substantially uniform thickness.

Next, the substrate W on which the barrier layer 105 is formed
Is transported from the second film-forming unit 14 to the third film-forming unit 15 via the transport device 10.

Next, a wiring body layer 106 made of Cu is formed on the barrier layer 105 of the substrate W set in the third film forming unit 15 (FIG. 4E). That is, a plasma beam from the wiring layer plasma gun 43 is incident on the wiring layer hearth 42a to melt and evaporate Cu, thereby forming a TiN barrier layer above the SiO ₂ pattern layer 103 and inside the opening VH. Cu is deposited thereon to form a substantially flat wiring body layer 106. At this time, on the surface of the barrier layer 105, a wiring main body layer 106 having extremely good (111) orientation and good adhesion to the barrier layer 105 is formed irrespective of the irregularities and the crystal state.

Next, the substrate W on which the wiring body layer 106 is formed
Is carried out of the substrate processing apparatus shown in FIG.

Next, the substrate W is carried into a CMP apparatus, and the upper portion of the wiring main body layer 106 is polished and removed. This allows
The wiring body layer 106 and the barrier layer 105 on the protrusions constituting the SiO ₂ pattern layer 103 are removed. This allows
The barrier layer 105 is formed in the opening VH of the SiO ₂ pattern layer 103.
And a Cu wiring pattern composed of a wiring body provided with an ohmic contact at the bottom is formed.

In the above embodiment, the first film forming unit 1
2, the silicide forming material layer 104 is formed on the SiO ₂ pattern layer 103 using ion plating, and the first film forming unit 12 is used as a CVD film forming apparatus to form a CVD film on the SiO ₂ pattern layer 103. Using T
An i film can also be formed. That is, the substrate processing apparatus includes a contact material film forming unit (CVD film forming apparatus) for forming a silicide forming material on the substrate W, a heat treatment unit for heating the silicide forming material film formed on the substrate W, A wiring layer forming unit for forming a wiring layer on the substrate, the wiring layer forming unit comprising: a wiring film forming plasma source for supplying a plasma beam; and a metal wiring material arranged to face the substrate and guide the plasma beam. And a wiring film hearth having a material evaporation source capable of accommodating the same.

Further, a Ti silicide is formed by CVD.
When forming a forming material layer, SiO 2 _TwoPattern layer 103
Of the opening VH is isotropically buried.
When the diameter of H is small and the aspect ratio is large,
As the aspect ratio increases, the barrier layer 105 and the wiring body layer 106
This makes it difficult to fill the opening VH, and
The electric resistance of the plug part increases. Therefore, openings and
If the groove has a large aspect ratio, the bias voltage
The above ion play that can give directionality to film formation
Forming silicide forming material layer 104 using
It is desirable to do.

The material of the silicide-forming material layer 104 is not limited to Ti, but may be cobalt, nickel, or the like. Further, a material containing titanium, cobalt, nickel, or the like (including the case of an alloy thereof). ) Can form a silicide-forming material layer.

The material of the barrier layer 105 is not limited to TaN, but may be titanium nitride. Further, tantalum, nitride of titanium, tantalum itself, Si, W,
The barrier layer can be formed using a material containing Nb.

The material of the wiring body layer 106 is not limited to Cu, but may be aluminum, silver, or gold.
Further, the wiring main body layer can be formed of a material such as an alloy containing these.

In the annealing unit 13, instead of heat-treating the silicide-forming material layer 104 by scanning with laser light, an ohmic contact layer can be formed by using lamp annealing.

In the annealing unit 13, when scanning the laser beam, it is not necessary to scan the substrate W uniformly, and the laser beam can be incident only on the location where the ohmic contact layer is to be formed.

The annealing unit 13 not only performs the heat treatment of the silicide forming material layer 104 but also
06 can be used for the heat treatment. In this case, the substrate W immediately after the formation of the wiring main body layer 106 is subjected to a heat treatment in the annealing unit 13, so that the wiring main body layer 106 is softened and the voids can be embedded.

[0075]

As is apparent from the above description, according to the substrate processing apparatus of the present invention, when forming a film of a silicide forming material, a plasma beam from a plasma source for forming a contact material is used. Therefore, a film of a silicide-forming material that is suitable for forming an ohmic contact and has high homogeneity and high conductivity can be quickly obtained. Also,
After the formation of the silicide-forming material film, the heat treatment unit heats the silicide-forming material film to silicide, and an ohmic contact can be formed there.

According to the substrate processing method of the present invention, a plasma beam is used when forming a film of a silicide-forming material, so that it is suitable for forming an ohmic contact and has a uniform and high conductivity. A film of the silicide-forming material can be obtained quickly. After the formation of the silicide-forming material film, the film of the silicide-forming material is heated to be silicided, and an ohmic contact can be formed here.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating an overall structure of a substrate processing apparatus according to an embodiment.

FIG. 2 is an explanatory diagram of a structure of a film forming unit and the like constituting the apparatus of FIG. 1;

FIG. 3 is a diagram illustrating a structure of an annealing unit included in the apparatus of FIG.

4 is a partial cross-sectional view of a semiconductor integrated circuit formed by the device shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Conveying apparatus 11 Cleaning unit 12 1st film-forming unit 13 Annealing unit 14 2nd film-forming unit 15 3rd film-forming unit 16 Carry-in / out chamber 26 Vacuum robot 41 for conveyance 41 Film-forming chamber 42 Anode member 42a Hearth 42b Annular auxiliary anode 42c Annular Magnet 43 Plasma gun 45 Exhaust system 50 Chuck 53 Adjusting member 60 Processing chamber 60a Window 61 Moving stage 62 Laser light source 63 Beam shaping optical system 65 Stage drive

Claims (9)

[Claims] 1. A contact material film forming plasma source for supplying a plasma beam, and a contact material film forming source disposed opposite to a substrate for guiding the plasma beam and accommodating a silicide forming material. A substrate processing apparatus comprising: a contact material deposition unit including a hearth; and a heat treatment unit that heats a silicide-forming material film formed on the substrate. 2. The heat treatment unit includes: a laser light source that generates a laser beam for heating a film of a silicide-forming material formed on the substrate; 2. The substrate processing apparatus according to claim 1, further comprising: a beam shaping optical system for entering the light; and scanning means for scanning the laser light on the substrate. 3. The substrate processing apparatus according to claim 1, further comprising a wiring layer forming unit for forming a wiring layer on the substrate. 4. The wiring layer forming unit includes: a wiring film forming plasma source that supplies a plasma beam; and a material evaporation source that is arranged to face the substrate and guides the plasma beam and can accommodate a metal wiring material. 4. The substrate processing apparatus according to claim 3, further comprising a wiring film hearth having: 5. The substrate processing apparatus according to claim 3, further comprising a barrier layer forming unit for forming a barrier layer on the substrate before forming a wiring layer in the wiring layer forming unit. 6. The contact material deposition unit deposits the silicide-forming material on the patterned substrate disposed in a first deposition chamber, and the heat treatment unit deposits the silicide-forming material in a second deposition chamber. Heat treating the silicide forming material of the disposed substrate to form an ohmic contact layer, the barrier layer forming unit forms the barrier layer on the substrate disposed in a third film forming chamber, The wiring layer forming unit may further include a transfer device that forms the wiring layer on the substrate disposed in a third film formation chamber and transfers the substrate between the first to fourth film formation chambers. The substrate processing apparatus according to claim 5, wherein: 7. The substrate processing apparatus according to claim 1, wherein the silicide-forming material contains at least one of titanium, cobalt, and nickel. 8. The material of the barrier layer includes at least one of titanium nitride, tantalum nitride, and tantalum, and the material of the metal wiring includes at least one of copper, aluminum, silver, and gold. The substrate processing apparatus according to claim 5, wherein: 9. A first step of supplying a plasma beam toward a material evaporation source to evaporate the silicide-forming material of the material evaporation source, thereby depositing a film of the silicide-forming material on a substrate; A second step of heating the film of the silicide forming material formed on the substrate to form a contact layer by causing the generated laser light to enter the substrate while scanning the laser beam in a predetermined beam shape. Substrate processing method provided.