TW200739803A - Asymmetric semiconductor device structure with improved reliability - Google Patents
Asymmetric semiconductor device structure with improved reliabilityInfo
- Publication number
- TW200739803A TW200739803A TW095147198A TW95147198A TW200739803A TW 200739803 A TW200739803 A TW 200739803A TW 095147198 A TW095147198 A TW 095147198A TW 95147198 A TW95147198 A TW 95147198A TW 200739803 A TW200739803 A TW 200739803A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- device structure
- improved reliability
- asymmetric semiconductor
- high voltage
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
-
- H10P10/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/157—Impurity concentrations or distributions
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75153105P | 2005-12-19 | 2005-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200739803A true TW200739803A (en) | 2007-10-16 |
Family
ID=37888333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095147198A TW200739803A (en) | 2005-12-19 | 2006-12-15 | Asymmetric semiconductor device structure with improved reliability |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080303092A1 (zh) |
| EP (1) | EP1966828A1 (zh) |
| JP (1) | JP2009528671A (zh) |
| KR (1) | KR20080083161A (zh) |
| CN (1) | CN101375404A (zh) |
| TW (1) | TW200739803A (zh) |
| WO (1) | WO2007072292A1 (zh) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007072304A2 (en) * | 2005-12-19 | 2007-06-28 | Nxp B.V. | Integrated high voltage diode and manufacturing method therefof |
| JP5769915B2 (ja) | 2009-04-24 | 2015-08-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR101233947B1 (ko) * | 2011-11-28 | 2013-02-15 | 주식회사 동부하이텍 | 반도체 소자 및 이의 제조방법 |
| US9917168B2 (en) | 2013-06-27 | 2018-03-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal oxide semiconductor field effect transistor having variable thickness gate dielectric |
| CN104377242A (zh) * | 2013-08-12 | 2015-02-25 | 上海华虹宏力半导体制造有限公司 | Ldmos器件及其制造方法 |
| US9306059B2 (en) * | 2014-03-20 | 2016-04-05 | Kinetic Technologies | Power semiconductor transistor with improved gate charge |
| CN106158957B (zh) * | 2015-04-10 | 2019-05-17 | 无锡华润上华科技有限公司 | 横向扩散金属氧化物半导体场效应管及其制造方法 |
| CN111969065B (zh) * | 2020-10-22 | 2021-02-09 | 晶芯成(北京)科技有限公司 | 一种半导体装置的制备方法 |
| CN115084266B (zh) * | 2022-05-11 | 2025-10-03 | 华虹半导体(无锡)有限公司 | Ldmos器件及其制造方法 |
| CN117253925A (zh) * | 2023-11-20 | 2023-12-19 | 深圳天狼芯半导体有限公司 | 一种具有凹槽场板的sti型ldmos及制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58202560A (ja) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JPH0214548A (ja) * | 1988-07-01 | 1990-01-18 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JP2697062B2 (ja) * | 1989-01-09 | 1998-01-14 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5861104A (en) * | 1996-03-28 | 1999-01-19 | Advanced Micro Devices | Trench isolation with rounded top and bottom corners and edges |
| KR100396703B1 (ko) * | 2001-04-28 | 2003-09-02 | 주식회사 하이닉스반도체 | 고전압 소자 및 그 제조방법 |
| JP2005129654A (ja) * | 2003-10-22 | 2005-05-19 | Fuji Electric Holdings Co Ltd | 半導体装置の製造方法 |
| SE0303099D0 (sv) * | 2003-11-21 | 2003-11-21 | Infineon Technologies Ag | Method in the fabrication of a monolithically integrated high frequency circuit |
-
2006
- 2006-12-11 US US12/158,105 patent/US20080303092A1/en not_active Abandoned
- 2006-12-11 CN CNA200680053004XA patent/CN101375404A/zh active Pending
- 2006-12-11 WO PCT/IB2006/054749 patent/WO2007072292A1/en not_active Ceased
- 2006-12-11 EP EP06842438A patent/EP1966828A1/en not_active Withdrawn
- 2006-12-11 KR KR1020087017377A patent/KR20080083161A/ko not_active Ceased
- 2006-12-11 JP JP2008545214A patent/JP2009528671A/ja active Pending
- 2006-12-15 TW TW095147198A patent/TW200739803A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP1966828A1 (en) | 2008-09-10 |
| KR20080083161A (ko) | 2008-09-16 |
| CN101375404A (zh) | 2009-02-25 |
| JP2009528671A (ja) | 2009-08-06 |
| US20080303092A1 (en) | 2008-12-11 |
| WO2007072292A1 (en) | 2007-06-28 |
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