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TW200739728A - A semiconductor device comprising a metallization layer stack with a porous low-k material having an enhanced integrity - Google Patents

A semiconductor device comprising a metallization layer stack with a porous low-k material having an enhanced integrity

Info

Publication number
TW200739728A
TW200739728A TW096102436A TW96102436A TW200739728A TW 200739728 A TW200739728 A TW 200739728A TW 096102436 A TW096102436 A TW 096102436A TW 96102436 A TW96102436 A TW 96102436A TW 200739728 A TW200739728 A TW 200739728A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
layer stack
metallization layer
highly
porous low
Prior art date
Application number
TW096102436A
Other languages
English (en)
Inventor
Markus Nopper
Udo Nothelfer
Axel Preusse
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of TW200739728A publication Critical patent/TW200739728A/zh

Links

Classifications

    • H10W20/063—
    • H10W20/039—
    • H10W20/091—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW096102436A 2006-01-31 2007-01-23 A semiconductor device comprising a metallization layer stack with a porous low-k material having an enhanced integrity TW200739728A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006004429A DE102006004429A1 (de) 2006-01-31 2006-01-31 Halbleiterbauelement mit einem Metallisierungsschichtstapel mit einem porösen Material mit kleinem ε mit einer erhöhten Integrität
US11/538,464 US20070178690A1 (en) 2006-01-31 2006-10-04 Semiconductor device comprising a metallization layer stack with a porous low-k material having an enhanced integrity

Publications (1)

Publication Number Publication Date
TW200739728A true TW200739728A (en) 2007-10-16

Family

ID=38268222

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096102436A TW200739728A (en) 2006-01-31 2007-01-23 A semiconductor device comprising a metallization layer stack with a porous low-k material having an enhanced integrity

Country Status (4)

Country Link
US (1) US20070178690A1 (zh)
DE (1) DE102006004429A1 (zh)
GB (1) GB0813520D0 (zh)
TW (1) TW200739728A (zh)

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US8652962B2 (en) 2012-06-19 2014-02-18 Taiwan Semiconductor Manufacturing Co., Ltd. Etch damage and ESL free dual damascene metal interconnect
US20240379561A1 (en) * 2023-05-09 2024-11-14 Nanya Technology Corporation Interconnect structure and manufacturing method thereof

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Also Published As

Publication number Publication date
US20070178690A1 (en) 2007-08-02
DE102006004429A1 (de) 2007-08-02
GB0813520D0 (en) 2008-08-27

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