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TW200717814A - TFT substrate and method of fabricating the same - Google Patents

TFT substrate and method of fabricating the same

Info

Publication number
TW200717814A
TW200717814A TW094137847A TW94137847A TW200717814A TW 200717814 A TW200717814 A TW 200717814A TW 094137847 A TW094137847 A TW 094137847A TW 94137847 A TW94137847 A TW 94137847A TW 200717814 A TW200717814 A TW 200717814A
Authority
TW
Taiwan
Prior art keywords
tft substrate
fabricating
pattern
forming
electrodes
Prior art date
Application number
TW094137847A
Other languages
Chinese (zh)
Other versions
TWI275181B (en
Inventor
Chao-Yi Hung
Chih-Hao Chen
Original Assignee
Innolux Display Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innolux Display Corp filed Critical Innolux Display Corp
Priority to TW94137847A priority Critical patent/TWI275181B/en
Application granted granted Critical
Publication of TWI275181B publication Critical patent/TWI275181B/en
Publication of TW200717814A publication Critical patent/TW200717814A/en

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The present invention relates to a method for fabricating a TFT substrate which includes the steps of: providing an insulating substrate; depositing a transparent conductive metal layer and a gate electrode metal layer on the insulating substrate in sequence; forming a pattern of gate electrodes and pixel electrodes in a photomask process; depositing a gate insulating layer on the insulating substrate, the gate electrodes and the pixel electrodes; forming a pattern of a semiconductor layer on the gate insulating layer; forming a pattern of contact holes in the insulating layer; forming a pattern of source electrodes and drain electrodes on the insulating layer and the semiconductor layer. The method can simplify the process of fabricating a TFT substrate and reduce cost of fabricating a TFT substrate. In addition, the invention provides a TFT substrate fabricated by the method.
TW94137847A 2005-10-28 2005-10-28 TFT substrate and method of fabricating the same TWI275181B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94137847A TWI275181B (en) 2005-10-28 2005-10-28 TFT substrate and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94137847A TWI275181B (en) 2005-10-28 2005-10-28 TFT substrate and method of fabricating the same

Publications (2)

Publication Number Publication Date
TWI275181B TWI275181B (en) 2007-03-01
TW200717814A true TW200717814A (en) 2007-05-01

Family

ID=38624300

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94137847A TWI275181B (en) 2005-10-28 2005-10-28 TFT substrate and method of fabricating the same

Country Status (1)

Country Link
TW (1) TWI275181B (en)

Also Published As

Publication number Publication date
TWI275181B (en) 2007-03-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees