TW200802887A - Liquid crystal display and method for fabricating the same - Google Patents
Liquid crystal display and method for fabricating the sameInfo
- Publication number
- TW200802887A TW200802887A TW095149352A TW95149352A TW200802887A TW 200802887 A TW200802887 A TW 200802887A TW 095149352 A TW095149352 A TW 095149352A TW 95149352 A TW95149352 A TW 95149352A TW 200802887 A TW200802887 A TW 200802887A
- Authority
- TW
- Taiwan
- Prior art keywords
- pixel portion
- region
- forming
- fabricating
- liquid crystal
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 238000002161 passivation Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A liquid crystal display and a method for fabricating the same are disclosed. The method for fabricating a liquid crystal display includes preparing an insulating substrate defining a TFT region of a pixel portion, forming an active layer on the substrate to cover the TFT region of the pixel region, forming a gate electrode of the pixel portion on the active layer, forming a source region of the pixel portion and a drain region of the pixel portion in the active layer at both sides of the gate electrode of the pixel portion, forming a passivation film having first and second contact holes on the substrate having the drain region of the pixel portion, the first and second contact holes respectively exposing the source region of the pixel portion and the drain region of the pixel portion, sequentially forming a transparent conductive film and a metal film on the passivation film, and selectively etching the metal film and the transparent conductive film to form a source electrode pattern of the pixel portion/a source electrode of the pixel portion, which are sequentially deposited to cover the first contact hole, and a drain electrode pattern of the pixel portion/a drain electrode of the pixel portion, which are sequentially deposited to cover the second contact hole.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20060061669 | 2006-06-30 | ||
| KR1020060124001A KR101338106B1 (en) | 2006-06-30 | 2006-12-07 | Liquid crystal display and method for fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200802887A true TW200802887A (en) | 2008-01-01 |
| TWI332265B TWI332265B (en) | 2010-10-21 |
Family
ID=39011287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095149352A TWI332265B (en) | 2006-06-30 | 2006-12-27 | Liquid crystal display and method for fabricating the same |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101338106B1 (en) |
| CN (1) | CN100592180C (en) |
| TW (1) | TWI332265B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI508269B (en) * | 2013-06-20 | 2015-11-11 | Au Optronics Corp | Pixel structure |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100580938C (en) * | 2008-03-25 | 2010-01-13 | 友达光电股份有限公司 | Active element array substrate and liquid crystal display panel |
| CN101556415B (en) * | 2008-04-10 | 2011-05-11 | 北京京东方光电科技有限公司 | Pixel structure and preparation method thereof |
| KR102145279B1 (en) * | 2013-12-31 | 2020-08-19 | 엘지디스플레이 주식회사 | Thin Film Transistor Array Substrate and Method of manufacturing the same |
| CN103972242B (en) * | 2014-04-22 | 2016-12-28 | 京东方科技集团股份有限公司 | A kind of manufacture method of array base palte, display device and array base palte |
| KR102596210B1 (en) | 2018-05-25 | 2023-10-30 | 엘지디스플레이 주식회사 | TFT substrate and display device including the same |
| CN108878540A (en) * | 2018-07-12 | 2018-11-23 | 南方科技大学 | Bottom gate thin film transistor and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002094064A (en) * | 2000-09-11 | 2002-03-29 | Matsushita Electric Ind Co Ltd | Thin film transistor, method of manufacturing thin film transistor, liquid crystal display device, and electroluminescence display device |
| US7601994B2 (en) * | 2003-11-14 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| KR20050067308A (en) * | 2003-12-27 | 2005-07-01 | 엘지.필립스 엘시디 주식회사 | Method for fabricating liquid crystal display panel improving process of making wires |
-
2006
- 2006-12-07 KR KR1020060124001A patent/KR101338106B1/en active Active
- 2006-12-27 TW TW095149352A patent/TWI332265B/en not_active IP Right Cessation
- 2006-12-29 CN CN200610156392A patent/CN100592180C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI508269B (en) * | 2013-06-20 | 2015-11-11 | Au Optronics Corp | Pixel structure |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101338106B1 (en) | 2013-12-06 |
| TWI332265B (en) | 2010-10-21 |
| KR20080003180A (en) | 2008-01-07 |
| CN101097367A (en) | 2008-01-02 |
| CN100592180C (en) | 2010-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200744215A (en) | Thin film transistor array substrate and method for fabricating the same | |
| TW200725911A (en) | Fabricating method for thin film transistor array substrate and thin film transistor array substrate using the same | |
| TW200943421A (en) | Method for manufacturing semiconductor device | |
| FR2923622B1 (en) | LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME | |
| TW200703660A (en) | TFT array panel, liquid crystal display including same, and method of manufacturing TFT array panel | |
| GB2444379B (en) | Array substrate for liquid crystal display device and method of manufacturing the same | |
| GB2439586B (en) | Liquid crystal display device and fabricating method thereof | |
| TW200743216A (en) | Liquid crystal display fabrication method | |
| EP1865371A3 (en) | Liquid crystal display panel and method of manufacturing the same | |
| JP6359650B2 (en) | Array substrate, display device, and method of manufacturing array substrate | |
| TW200608576A (en) | Method for fabricating organic thin film transistor and method for fabricating liquid crystal display device using the same | |
| TW200734780A (en) | Display device and manufacturing method therefor | |
| TW200641496A (en) | Organic thin film transistor array panel and method of manufacturing the same | |
| TW200419811A (en) | Method of fabricating a thin film transistor array panel | |
| TW200709426A (en) | Liquid crystal display device capable of reducing leakage current, and fabrication method thereof | |
| TW200743218A (en) | Liquid crystal display device and method of fabricating the same | |
| TW200727487A (en) | Structure of thin film transistor array and method for making the same | |
| TW200633584A (en) | Array substrate, methods for forming the same, and electrolumiscent display panel, display device and electronic device using the same | |
| TW200802887A (en) | Liquid crystal display and method for fabricating the same | |
| TW200622996A (en) | Method of fabricating a pixel structure of a thin film transistor liquid crystal display | |
| TW200708870A (en) | Manufacturing method of liquid crystal display | |
| TW200709425A (en) | Etching tape and method of fabricating array substrate for liquid crystal display using the same | |
| TW200735229A (en) | Method for manufacturing thin film transistor display array with dual-layer metal | |
| TW200717819A (en) | Manufacturing liquid crystal display substrates | |
| TW200733399A (en) | Thin film transistor array panel and method of manufacturing thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |