TW200703516A - Active element and switch circuit device - Google Patents
Active element and switch circuit deviceInfo
- Publication number
- TW200703516A TW200703516A TW095110505A TW95110505A TW200703516A TW 200703516 A TW200703516 A TW 200703516A TW 095110505 A TW095110505 A TW 095110505A TW 95110505 A TW95110505 A TW 95110505A TW 200703516 A TW200703516 A TW 200703516A
- Authority
- TW
- Taiwan
- Prior art keywords
- unit
- hbt
- fet
- active element
- base
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005092875A JP2006278544A (ja) | 2005-03-28 | 2005-03-28 | 能動素子およびその製造方法 |
| JP2005092869A JP2006279316A (ja) | 2005-03-28 | 2005-03-28 | スイッチ回路装置 |
| JP2005092874A JP2006278543A (ja) | 2005-03-28 | 2005-03-28 | スイッチ回路装置 |
| JP2006011310A JP2007194412A (ja) | 2006-01-19 | 2006-01-19 | 能動素子およびスイッチ回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200703516A true TW200703516A (en) | 2007-01-16 |
| TWI297181B TWI297181B (en) | 2008-05-21 |
Family
ID=37393296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095110505A TWI297181B (en) | 2005-03-28 | 2006-03-27 | Active element and switch circuit device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7514727B2 (zh) |
| KR (1) | KR100677816B1 (zh) |
| TW (1) | TWI297181B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI751415B (zh) * | 2018-08-24 | 2022-01-01 | 日商村田製作所股份有限公司 | 異質接合雙極性電晶體及半導體裝置 |
| TWI794203B (zh) * | 2017-02-07 | 2023-03-01 | 日商索尼半導體解決方案公司 | 半導體裝置及半導體裝置之製造方法 |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200642268A (en) * | 2005-04-28 | 2006-12-01 | Sanyo Electric Co | Compound semiconductor switching circuit device |
| JP4810904B2 (ja) | 2005-07-20 | 2011-11-09 | ソニー株式会社 | 高周波スイッチ回路を有する高周波装置 |
| EP2040299A1 (en) * | 2007-09-12 | 2009-03-25 | Forschungsverbund Berlin e.V. | Electrical devices having improved transfer characteristics and method for tailoring the transfer characteristics of such an electrical device |
| GB2453115A (en) * | 2007-09-25 | 2009-04-01 | Filtronic Compound Semiconduct | HBT and FET BiFET hetrostructure and substrate with etch stop layers |
| US20100213513A1 (en) * | 2009-02-26 | 2010-08-26 | Skyworks Solutions, Inc. | Hyperabrupt Diode Structure And Method For Making Same |
| KR101657327B1 (ko) * | 2009-04-07 | 2016-09-13 | 스미또모 가가꾸 가부시키가이샤 | 반도체 기판, 반도체 기판의 제조 방법 및 전자 디바이스 |
| JP2010278521A (ja) * | 2009-05-26 | 2010-12-09 | Mitsubishi Electric Corp | 電力増幅器 |
| KR101649004B1 (ko) * | 2009-05-26 | 2016-08-17 | 스미또모 가가꾸 가부시키가이샤 | 반도체 기판, 반도체 기판의 제조 방법 및 전자 디바이스 |
| JP5613474B2 (ja) * | 2010-06-24 | 2014-10-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US20120112243A1 (en) * | 2010-11-04 | 2012-05-10 | Zampardi Peter J | Bipolar and FET Device Structure |
| US9105488B2 (en) | 2010-11-04 | 2015-08-11 | Skyworks Solutions, Inc. | Devices and methodologies related to structures having HBT and FET |
| JP5879694B2 (ja) * | 2011-02-23 | 2016-03-08 | ソニー株式会社 | 電界効果トランジスタ、半導体スイッチ回路、および通信機器 |
| US9679869B2 (en) | 2011-09-02 | 2017-06-13 | Skyworks Solutions, Inc. | Transmission line for high performance radio frequency applications |
| CN103597742A (zh) | 2012-06-14 | 2014-02-19 | 西凯渥资讯处理科技公司 | 包含相关系统、装置及方法的功率放大器模块 |
| US9419567B2 (en) | 2012-06-14 | 2016-08-16 | Skyworks Solutions, Inc. | Process-compensated HBT power amplifier bias circuits and methods |
| US9406668B2 (en) * | 2013-03-27 | 2016-08-02 | Panasonic Intellectual Property Management Co., Ltd. | Power semiconductor element |
| US9799731B2 (en) | 2013-06-24 | 2017-10-24 | Ideal Power, Inc. | Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors |
| EP2901483B1 (en) | 2013-06-24 | 2016-09-07 | Ideal Power Inc. | Systems, circuits, devices, and methods with bidirectional bipolar transistors |
| US9742385B2 (en) | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
| US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| US9355853B2 (en) | 2013-12-11 | 2016-05-31 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| US9660551B2 (en) | 2014-11-06 | 2017-05-23 | Ideal Power, Inc. | Operating point optimization with double-base-contact bidirectional bipolar junction transistor circuits, methods, and systems |
| JP6071009B2 (ja) | 2014-11-27 | 2017-02-01 | 株式会社村田製作所 | 化合物半導体装置 |
| US10868155B2 (en) | 2014-11-27 | 2020-12-15 | Murata Manufacturing Co., Ltd. | Compound semiconductor device |
| US11508834B2 (en) | 2014-11-27 | 2022-11-22 | Murata Manufacturing Co., Ltd. | Compound semiconductor device |
| US9960157B2 (en) * | 2015-10-15 | 2018-05-01 | Infineon Technologies Austria Ag | Bidirectional normally-off III-V high electron mobility transistor (HEMT)devices and circuits |
| WO2017138778A1 (ko) * | 2016-02-12 | 2017-08-17 | 엘지이노텍(주) | 반도체 소자 |
| US10978583B2 (en) * | 2017-06-21 | 2021-04-13 | Cree, Inc. | Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity |
| US10580748B2 (en) * | 2017-12-06 | 2020-03-03 | Murata Manufacturing Co., Ltd. | Semiconductor apparatus |
| JP2020184580A (ja) * | 2019-05-08 | 2020-11-12 | 株式会社村田製作所 | 半導体装置 |
| JP2021132100A (ja) * | 2020-02-19 | 2021-09-09 | 株式会社村田製作所 | 高周波電力増幅素子 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4396932A (en) * | 1978-06-16 | 1983-08-02 | Motorola, Inc. | Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other |
| US5012318A (en) * | 1988-09-05 | 1991-04-30 | Nec Corporation | Hybrid semiconductor device implemented by combination of heterojunction bipolar transistor and field effect transistor |
| JP3323544B2 (ja) * | 1992-08-21 | 2002-09-09 | 株式会社日立製作所 | 半導体装置 |
| US5250826A (en) * | 1992-09-23 | 1993-10-05 | Rockwell International Corporation | Planar HBT-FET Device |
| JP3322377B2 (ja) | 1995-01-31 | 2002-09-09 | ソニー株式会社 | 信号切換え装置 |
| US6043519A (en) * | 1996-09-12 | 2000-03-28 | Hughes Electronics Corporation | Junction high electron mobility transistor-heterojunction bipolar transistor (JHEMT-HBT) monolithic microwave integrated circuit (MMIC) and single growth method of fabrication |
| JP2000058663A (ja) | 1998-08-11 | 2000-02-25 | Mitsubishi Electric Corp | 集積型バイアス回路素子 |
| JP2000260782A (ja) | 1999-03-09 | 2000-09-22 | Sanyo Electric Co Ltd | 高周波集積回路 |
| US6919590B2 (en) * | 2003-08-29 | 2005-07-19 | Motorola, Inc. | Heterojunction bipolar transistor with monolithically integrated junction field effect transistor and method of manufacturing same |
| JP2005229197A (ja) * | 2004-02-10 | 2005-08-25 | Matsushita Electric Ind Co Ltd | 電力増幅器モジュール |
-
2006
- 2006-03-21 KR KR1020060025611A patent/KR100677816B1/ko not_active Expired - Fee Related
- 2006-03-27 TW TW095110505A patent/TWI297181B/zh active
- 2006-03-28 US US11/390,434 patent/US7514727B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI794203B (zh) * | 2017-02-07 | 2023-03-01 | 日商索尼半導體解決方案公司 | 半導體裝置及半導體裝置之製造方法 |
| US12414308B2 (en) | 2017-02-07 | 2025-09-09 | Sony Semiconductor Solutions Corporation | Semiconductor device and method of manufacturing semiconductor device |
| TWI751415B (zh) * | 2018-08-24 | 2022-01-01 | 日商村田製作所股份有限公司 | 異質接合雙極性電晶體及半導體裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060249752A1 (en) | 2006-11-09 |
| KR100677816B1 (ko) | 2007-02-02 |
| US7514727B2 (en) | 2009-04-07 |
| TWI297181B (en) | 2008-05-21 |
| KR20060103843A (ko) | 2006-10-04 |
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