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TW200603196A - Inspecting device using an electron ebam and method for making semiconductor devices with such inspection device - Google Patents

Inspecting device using an electron ebam and method for making semiconductor devices with such inspection device

Info

Publication number
TW200603196A
TW200603196A TW094129608A TW94129608A TW200603196A TW 200603196 A TW200603196 A TW 200603196A TW 094129608 A TW094129608 A TW 094129608A TW 94129608 A TW94129608 A TW 94129608A TW 200603196 A TW200603196 A TW 200603196A
Authority
TW
Taiwan
Prior art keywords
electron
ebam
semiconductor devices
optical system
working chamber
Prior art date
Application number
TW094129608A
Other languages
English (en)
Other versions
TWI294632B (en
Inventor
Mamoru Nakasuji
Nobuharu Noji
Tohru Satake
Masahiro Hatakeyama
Toshifumi Kimba
Hirosi Sobukawa
Shoji Yoshikawa
Takeshi Murakami
Kenji Watanabe
Tsutomu Karimata
Shin Oowada
Mutsumi Saito
Yuichiro Yamazaki
Takamitsu Nagai
Ichirota Nagahama
Original Assignee
Ebara Corp
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp, Toshiba Co Ltd filed Critical Ebara Corp
Publication of TW200603196A publication Critical patent/TW200603196A/zh
Application granted granted Critical
Publication of TWI294632B publication Critical patent/TWI294632B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/70—Arrangements for deflecting ray or beam
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/266—Measurement of magnetic or electric fields in the object; Lorentzmicroscopy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H10P72/0462—
    • H10P72/0471—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/082—Electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/204—Means for introducing and/or outputting objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2806—Secondary charged particle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H01J2237/2816—Length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
TW094129608A 2000-06-27 2001-06-27 Inspecting device using an electron ebam and method for making semiconductor devices with such inspection device TWI294632B (en)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2000193104 2000-06-27
JP2000229101 2000-07-28
JP2000335934 2000-11-02
JP2001011218 2001-01-19
JP2001031901 2001-02-08
JP2001031906 2001-02-08
JP2001033599 2001-02-09
JP2001035069 2001-02-13
JP2001158662 2001-05-28
JP2001162041 2001-05-30
JP2001189304 2001-06-22

Publications (2)

Publication Number Publication Date
TW200603196A true TW200603196A (en) 2006-01-16
TWI294632B TWI294632B (en) 2008-03-11

Family

ID=27582319

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094129608A TWI294632B (en) 2000-06-27 2001-06-27 Inspecting device using an electron ebam and method for making semiconductor devices with such inspection device

Country Status (5)

Country Link
US (6) US7241993B2 (zh)
EP (3) EP2365512A3 (zh)
KR (1) KR100875230B1 (zh)
TW (1) TWI294632B (zh)
WO (1) WO2002001596A1 (zh)

Cited By (12)

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TWI453781B (zh) * 2010-10-21 2014-09-21 Hermes Microvision Inc 應用於電子源之燈絲
TWI484522B (zh) * 2012-02-09 2015-05-11 Hitachi High Tech Corp Charged particle - ray device
TWI498522B (zh) * 2012-10-26 2015-09-01 Hitachi High Tech Corp Measurement method of charged particle beam device and stacking misalignment
US10393675B2 (en) 2014-04-04 2019-08-27 Nordson Corporation X-ray inspection apparatus
US10478642B2 (en) 2017-05-31 2019-11-19 Kabushiki Kaisha Toshiba Particle beam treatment apparatus
CN113227900A (zh) * 2019-02-06 2021-08-06 株式会社 V 技术 掩模检查装置
US11175248B2 (en) 2018-09-18 2021-11-16 Asml Netherlands B.V. Apparatus and method for detecting time-dependent defects in a fast-charging device
US11232928B2 (en) 2018-12-31 2022-01-25 Asml Netherlands B.V. Multi-beam inspection apparatus
TWI778278B (zh) * 2018-07-18 2022-09-21 日商住友重機械工業股份有限公司 負離子照射裝置及負離子照射裝置的控制方法
TWI828000B (zh) * 2021-09-15 2024-01-01 日商鎧俠股份有限公司 檢查裝置及檢查方法
TWI835084B (zh) * 2021-03-26 2024-03-11 日商日立全球先端科技股份有限公司 帶電粒子束系統
TWI852145B (zh) * 2021-11-18 2024-08-11 日商紐富來科技股份有限公司 描繪裝置及描繪方法

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TW579536B (en) * 2001-07-02 2004-03-11 Zeiss Carl Semiconductor Mfg Examining system for the particle-optical imaging of an object, deflector for charged particles as well as method for the operation of the same
US6998611B2 (en) * 2001-09-06 2006-02-14 Ebara Corporation Electron beam apparatus and device manufacturing method using same
JP3984019B2 (ja) * 2001-10-15 2007-09-26 パイオニア株式会社 電子ビーム装置及び電子ビーム調整方法
EP1455378B1 (en) * 2001-11-21 2013-08-14 Hitachi High-Technologies Corporation Sample imaging method and charged particle beam system
JP3996774B2 (ja) * 2002-01-09 2007-10-24 株式会社日立ハイテクノロジーズ パターン欠陥検査方法及びパターン欠陥検査装置
JP2003297272A (ja) * 2002-04-04 2003-10-17 Ebara Corp 電子線装置及び該装置を用いたデバイス製造方法
DE10232689A1 (de) * 2002-07-18 2004-02-05 Leo Elektronenmikroskopie Gmbh Mit Strahlen geladener Teilchen arbeitende Anwendungen
US7157703B2 (en) * 2002-08-30 2007-01-02 Ebara Corporation Electron beam system
JP3944439B2 (ja) * 2002-09-26 2007-07-11 株式会社日立ハイテクノロジーズ 電子線を用いた検査方法および検査装置
US7446474B2 (en) * 2002-10-10 2008-11-04 Applied Materials, Inc. Hetero-junction electron emitter with Group III nitride and activated alkali halide
US7015467B2 (en) * 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode
US7081625B2 (en) * 2002-11-06 2006-07-25 Hitachi High-Technologies Corporation Charged particle beam apparatus
JP4012813B2 (ja) * 2002-11-27 2007-11-21 株式会社日立ハイテクノロジーズ 透過型電子顕微鏡及び試料観察方法
TWI228750B (en) * 2003-02-25 2005-03-01 Samsung Electronics Co Ltd Apparatus and method for processing wafers
US7138629B2 (en) 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
JP2004363085A (ja) * 2003-05-09 2004-12-24 Ebara Corp 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法
CN1820346B (zh) * 2003-05-09 2011-01-19 株式会社荏原制作所 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法
US7211796B2 (en) * 2003-05-27 2007-05-01 Kabushiki Kaisha Toshiba Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device
DE10330506A1 (de) * 2003-07-05 2005-03-31 Leica Microsystems Semiconductor Gmbh Vorrichtung zur Waferinspektion
EP2579273B8 (en) 2003-09-05 2019-05-22 Carl Zeiss Microscopy GmbH Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
US7870504B1 (en) 2003-10-01 2011-01-11 TestPlant Inc. Method for monitoring a graphical user interface on a second computer display from a first computer
JP4757636B2 (ja) * 2003-10-31 2011-08-24 浜松ホトニクス株式会社 試料観察方法及び顕微鏡、並びにこれに用いる固浸レンズ及び光学密着液
JP4248382B2 (ja) * 2003-12-04 2009-04-02 株式会社日立ハイテクノロジーズ 荷電粒子ビームによる検査方法および検査装置
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JP4316394B2 (ja) * 2004-01-21 2009-08-19 株式会社東芝 荷電ビーム装置
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