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TW200601407A - Method for manufacturing semiconductor substrate and semiconductor substrate - Google Patents

Method for manufacturing semiconductor substrate and semiconductor substrate

Info

Publication number
TW200601407A
TW200601407A TW094120342A TW94120342A TW200601407A TW 200601407 A TW200601407 A TW 200601407A TW 094120342 A TW094120342 A TW 094120342A TW 94120342 A TW94120342 A TW 94120342A TW 200601407 A TW200601407 A TW 200601407A
Authority
TW
Taiwan
Prior art keywords
semiconductor substrate
oxide film
gate oxide
diffusion layer
layer
Prior art date
Application number
TW094120342A
Other languages
English (en)
Other versions
TWI297170B (en
Inventor
Yasumori Fukushima
Yutaka Takafuji
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200601407A publication Critical patent/TW200601407A/zh
Application granted granted Critical
Publication of TWI297170B publication Critical patent/TWI297170B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10P72/74—
    • H10P10/00—
    • H10W72/0198—
    • H10P72/7432—

Landscapes

  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
TW094120342A 2004-06-18 2005-06-17 Method for manufacturing semiconductor substrate and semiconductor substrate TWI297170B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004181527A JP4814498B2 (ja) 2004-06-18 2004-06-18 半導体基板の製造方法

Publications (2)

Publication Number Publication Date
TW200601407A true TW200601407A (en) 2006-01-01
TWI297170B TWI297170B (en) 2008-05-21

Family

ID=35480948

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120342A TWI297170B (en) 2004-06-18 2005-06-17 Method for manufacturing semiconductor substrate and semiconductor substrate

Country Status (4)

Country Link
US (1) US7563693B2 (zh)
JP (1) JP4814498B2 (zh)
KR (1) KR100725551B1 (zh)
TW (1) TWI297170B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI668801B (zh) * 2007-06-11 2019-08-11 日商瑞薩電子股份有限公司 半導體裝置之製造方法

Families Citing this family (234)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7897443B2 (en) * 2005-04-26 2011-03-01 Sharp Kabushiki Kaisha Production method of semiconductor device and semiconductor device
EP1881527A1 (en) * 2006-07-17 2008-01-23 STMicroelectronics S.r.l. Process for manufacturing a semiconductor wafer having SOI-insulated wells and semiconductor wafer thereby manufactured
KR101362688B1 (ko) * 2007-04-13 2014-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법
US8421076B2 (en) 2007-12-27 2013-04-16 Sharp Kabushiki Kaisha Insulating substrate for semiconductor apparatus, semiconductor apparatus, and method for manufacturing semiconductor apparatus
WO2009084309A1 (ja) * 2007-12-27 2009-07-09 Sharp Kabushiki Kaisha 半導体装置の製造方法、および当該製造方法によって作製される半導体装置
US20100295105A1 (en) * 2007-12-27 2010-11-25 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing the same
WO2009101662A1 (ja) * 2008-02-13 2009-08-20 Sharp Kabushiki Kaisha 半導体装置の製造方法、半導体装置及び表示装置
JP2010114179A (ja) * 2008-11-05 2010-05-20 Hitachi Displays Ltd 表示装置および表示装置の製造方法
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